JP2016151040A - Film deposition method of thin film - Google Patents

Abstract

A thin film deposition method capable of performing plasma emission monitoring (PEM) control without being restricted by the type of substance that emits plasma light. Plasma light is acquired by a collimator 14 and transmitted to a monochromator 17 to select a specific substance included in a constituent material, and a specific peak included in a spectrum of light emitted from the plasma of the specific substance is selected. A step of acquiring a plasma light including a specific peak, a step of decomposing the plasma light into a spectrum, and a detection wavelength range so that noise that includes a specific peak wavelength and impedes detection of a specific peak intensity is eliminated. A control method comprising a step of setting, a step of detecting a specific peak intensity, and a step of transmitting a signal to the mass flow controller 19 so that the specific peak intensity is constant and adjusting a gas flow rate. [Selection] Figure 1

Description

  The present invention relates to a method for forming a thin film.

  Various thin films such as transparent conductive films conventionally used in liquid crystal displays, optical thin films such as antireflection films and protective films used in various optical components, gas barrier thin films used in packaging materials, and magnetic thin films used in magnetic recording A sputtering method is widely used as a method for forming a film.

  In a reactive sputtering method, which is a kind of sputtering method, a sputtering gas and a reactive gas are injected into a chamber, and a substance knocked out of the target by the sputtering gas is deposited on a substrate while reacting with the reactive gas. At this time, the flow rate of the reactive gas is adjusted to suppress variations in film thickness distribution and film characteristics.

  As a typical control method for adjusting the flow rate of the reactive gas, plasma emission monitoring control (hereinafter referred to as PEM control) is known (for example, Patent Document 1: JP-A-2002-212720). In PEM control, reactivity is maintained so that the intensity of light of a specific wavelength contained in the light emitted by the plasma formed between the target and the substrate (hereinafter referred to as “plasma light”) is kept constant. Adjust the gas flow rate.

  Plasma light observed in the sputtering method includes plasma light generated from the respective plasmas of the sputtering gas, the reactive gas, and the target constituent material. In order to appropriately adjust the flow rate of the reactive gas in the PEM control, it is necessary to accurately detect the intensity of any one of the plasma lights of the sputtering gas, the reactive gas, and the target material.

  However, the wavelength that brings the peak of the plasma light intensity of each of the sputtering gas, the reactive gas, and the target constituent (the peak of the intensity of the plasma light is hereinafter referred to as “peak”) If they are close to each other (hereinafter referred to as “peak wavelength”), the intensity of the plasma light at the peak wavelength (the intensity of the plasma light at the peak wavelength is hereinafter referred to as “peak intensity”) may not be detected accurately. In this case, the peak of another wavelength close to the peak wavelength becomes noise, and PEM control may be disabled.

  In order to avoid such a situation, it is conceivable to change the peak to be detected to one having no adjacent peak. However, this may limit the choice of sputtering gas, reactive gas and target material. In addition, depending on the target film, it may be impossible to change the detected peak. Therefore, measures to avoid noise by changing the detected peak are not the best measures.

JP 2002-212720 A

  An object of the present invention is to realize a thin film forming method capable of performing PEM control without being restricted by the kind of substance (for example, sputtering gas, reactive gas, target material) that emits plasma light.

  The inventor of the present application sets a wavelength range in which the plasma light of another substance is not mixed as noise when detecting the peak intensity of the plasma light of a specific substance in PEM control used for forming a thin film. The peak intensity of the plasma light of the substance can be detected with high accuracy. As a result, it has been found that PEM control can be performed without being restricted by the type of substance that emits plasma light, and the present invention has been completed. In the following, the target substance for detecting the intensity of the plasma light is “specific substance”, the peak contained in the plasma light spectrum of the specific substance is “specific peak”, the wavelength of the specific peak is “specific peak wavelength”, and the intensity of the specific peak Is called “specific peak intensity”.

(1) The present invention generates plasma of a film forming material and a constituent material of a gas in a chamber supplied with at least a substrate, a film forming material, and a gas used for forming the thin film, The thin film is formed by forming a thin film on the surface of the substrate while adjusting the gas flow rate with reference to the emission intensity.
The thin film formation method of the present invention includes the following steps.
A step of selecting a specific substance included in the constituent substances.
A step of selecting a specific peak included in a spectrum of light emitted from a plasma of a specific substance.
A step of acquiring plasma light including a specific peak.
The step of decomposing the plasma light into a spectrum;
A step of setting a detection wavelength range of the specific peak intensity so that noise that inhibits detection of the specific peak intensity is excluded, and a specific peak wavelength is included.
A step of detecting a specific peak intensity in a detection wavelength range;
-Adjusting the gas flow rate with reference to the specific peak intensity.

  (2) In the thin film deposition method of the present invention, the detection wavelength range of the specific peak intensity can be set continuously.

  (3) In the thin film deposition method of the present invention, the detection wavelength range of the specific peak intensity is set by a monochromator.

  (4) In the thin film formation method of the present invention, the detection wavelength range is 1 nm or less on one side (upper limit-lower limit is 2 nm or less).

  According to the present invention, a thin film forming method capable of performing PEM control without being restricted by the kind of substance that emits plasma light has been realized.

Schematic diagram of sputtering equipment Example of plasma emission spectrum around 590nm Example of plasma emission spectrum around 780nm When depositing silicon oxide, graph of oxygen flow rate and discharge voltage when controlled by oxygen peak (monochromator) When depositing silicon oxide, graph of oxygen flow rate and discharge voltage when controlled by silicon peak (monochromator) Graph of oxygen flow rate and discharge voltage when controlling niobium oxide film by oxygen peak (monochromator) When depositing niobium oxide, graphs of oxygen flow rate and discharge voltage when controlled by the peak of niobium (monochromator) Graph of oxygen flow rate and discharge voltage when controlled by oxygen peak when depositing silicon oxide (bandpass filter) When depositing niobium oxide, graph of oxygen flow rate and discharge voltage when controlled by oxygen peak (bandpass filter)

  FIG. 1 is a schematic view of an example of a sputtering apparatus using the thin film forming method of the present invention. The sputtering apparatus 10 includes a chamber 11. In the chamber 11, a target 12, an electrode 13, a collimator 14, and a base material 15 are provided. The electrode 13 is fixed to the back surface of the target 12 and has the same potential as the target 12. The atoms and compounds scattered from the target 12 adhere to the base material 15 and become a thin film (sputtering film).

  A power source 16, a monochromator 17, a PEM control device 18, and a mass flow controller 19 are provided outside the chamber 11.

  The power source 16 is electrically connected to the electrode 13 and adjusts the potential of the electrode 13 and the target 12. The monochromator 17 is connected to the collimator 14 by an optical fiber. The PEM control device 18 is connected to the monochromator 17 by a signal line. The mass flow controller 19 is connected to the PEM control device 18 by a signal line.

  From the mass flow controller 19, a gas introduction pipe 20 is conducted into the chamber 11, and a gas 21 is supplied into the chamber 11. The gas 21 is, for example, a sputtering gas (for example, argon) or a reactive gas (for example, oxygen). Due to the voltage applied between the base material 15 and the target 12, the gas 21 and the constituent materials of the target 12 are converted into plasma in the space between the target 12 and the base material 15, thereby forming a plasma 22.

  The plasma 22 emits plasma light of the constituent materials of the gas 21 and the target 12. Plasma light is acquired by the collimator 14 and transmitted to the monochromator 17 through an optical fiber. In the monochromator 17, the plasma light is decomposed into a spectrum. Although the collimator 14 acquires plasma light in a wide wavelength range, the peak intensity of the plasma light in the narrow wavelength range set by the monochromator 17 is detected.

  The monochromator 17 is a combination of a diffraction grating (not shown), a slit (not shown), and a photomultiplier tube (not shown). A wavelength range of light to be detected by the diffraction grating and the slit is set, a specific peak intensity included in the wavelength range is detected by a photomultiplier tube, and converted into an electric signal. In the monochromator 17, the center value of the wavelength range can be continuously set to a desired value by adjusting the angle formed by the diffraction grating surface and the diffracted light. The wavelength range can be continuously set to a desired value by adjusting the width of the slit through which the diffracted light passes.

  The electrical signal having a specific peak intensity detected by the monochromator 17 is transmitted to the PEM control device 18. The PEM control device 18 transmits a signal to the mass flow controller 19 so that the peak intensity of the specific plasma light is constant. The mass flow controller 19 adjusts the flow rate of the gas 21 based on the transmitted signal.

[Thin Film Formation Method of the Present Invention]
In the thin film deposition method of the present invention, the plasma of each of the deposition material and the gas constituent material is generated, and the surface of the substrate is adjusted while adjusting the gas flow rate (PEM control) with reference to the emission intensity of the plasma. A thin film is formed.

[Step of selecting specific substances]
First, the intrinsic spectrum of each plasma light of the film forming material and the gas constituent material is investigated, and the constituent material most suitable for PEM control is selected. Such a constituent substance is referred to as a “specific substance”. For example, when the sputtering gas is argon, the reactive gas is oxygen, and the target is silicon, one of argon, oxygen, and silicon is selected as the specific substance.

[Step to select specific peak]
The spectrum of plasma light of a specific substance usually includes a plurality of peaks. Among the plurality of peaks of the plasma light of the specific substance, the peak most suitable for PEM control is selected as the “specific peak”. Peaks suitable for PEM control are those that do not have other constituent peaks near the peak. The peaks of other constituent substances in the vicinity become noise when the peak is detected. For example, when oxygen is a specific substance, there are a plurality of oxygen plasma peaks, but an oxygen peak without argon and silicon peaks nearby is selected as the specific peak.

[Step of obtaining plasma light including a specific peak]
The step of acquiring the plasma light including the specific peak is executed by making the plasma light incident on the collimator 14, for example. Since the wavelength range of the plasma light acquired by the collimator 14 is wide, the specific peak is usually included therein. In this wavelength range, for example, a plurality of spectra included in the plasma light of the constituent materials (for example, argon, oxygen, silicon) of the gas 21 and the target 12 are superimposed and included. Therefore, PEM control cannot be performed simply by acquiring plasma light and detecting its intensity.

[Step of splitting plasma light into spectrum]
The step of decomposing the plasma light into a spectrum is performed, for example, by decomposing light transmitted from the collimator 14 to the monochromator 17 into a spectrum by a diffraction grating (not shown) provided inside the monochromator 17. The step of decomposing the plasma light into a spectrum is not limited to the diffraction grating, and may be performed by a prism (not shown), for example. However, in general, the diffraction grating is preferable because it has a higher resolution than the prism and the resolution is less affected by the wavelength.

[Step to set the detection wavelength range of specific peak intensity]
“Detection wavelength range” means a wavelength range in which plasma emission can be detected. Accordingly, the “detection wavelength range of specific peak intensity” means a wavelength range in which the specific peak intensity can be detected. That is, the specific peak wavelength is included in the “detection wavelength range of the specific peak intensity”. In the step of setting the wavelength range in which the specific peak intensity is detected, a wavelength range in which the specific peak is included and the peaks of other constituent substances that cause noise that inhibits the detection of the specific peak intensity is set. When the specific peak and the peak of another constituent are close to each other, the wavelength range must be set narrow. In such a case, as will be described later, the wavelength range can be set by the monochromator 17, but it may not be possible by a bandpass filter (not shown). In the present application, a “wavelength range in which specific peaks are included and peaks of other constituents that cause noise that hinders detection of specific peak intensities” is set. It does not mean that the narrow wavelength range of the pass filter is set. If noise can be eliminated, it is desirable to set a wavelength range as wide as possible. This is because the wider the wavelength range, the higher the S / N ratio (signal / noise ratio) and the higher the detection accuracy. The present application is not a simple method of detecting a specific peak intensity in the narrowest wavelength range possible.

  As an example, FIG. 2 shows a spectrum of plasma light around 590 nm. The horizontal axis represents wavelength (unit: nm), and the vertical axis represents emission intensity (arbitrary unit). An attempt is made to detect an argon (Ar) peak in the spectrum of FIG. The argon peak is near 591.2 nm, but there is a nitrogen (N) peak near 592.5 nm. If the center value of the detection wavelength of the monochromator 17 is 591.2 nm and the wavelength range (one side) is 1 nm, the detection range is 590.2 nm to 592.2 nm. At this time, the argon peak falls within the detection range, but the nitrogen peak does not. Thereby, the peak intensity of argon can be detected without receiving the influence (noise) of the peak of nitrogen. In this case, if the wavelength range (one side) is 1.3 nm, for example, the detection range is 589.9 nm to 592.5 nm, and the nitrogen peak (592.5 nm) also enters the detection range and becomes noise. Decreases.

  The detection wavelength range can also be set using a band pass filter (high-precision color filter) (not shown) instead of the monochromator 17. However, the detection (transmission) wavelength range of a commercially available bandpass filter is determined in advance, and the detection wavelength range can only be selected discretely. In addition, since the detection wavelength range of each bandpass filter is considerably wider than that of the monochromator 17, noise may be mixed as will be described later.

  As an example, FIG. 3 shows a spectrum of plasma light around 780 nm. The horizontal axis represents wavelength (unit: nm), and the vertical axis represents emission intensity (arbitrary unit). An attempt is made to detect the peak intensity of oxygen (O) in the spectrum of FIG. The oxygen peak is near 776.5 nm, but there is a very strong argon (Ar) peak near 771.5 nm. A commercially available bandpass filter cannot select the detection wavelength range freely. If a commercially available bandpass filter is used to detect the peak intensity of oxygen near 776.5 nm, a bandpass filter having a center value of 780 nm and a wavelength range (one side) of 8 nm is generally used. In this case, since the detection range is 772 nm to 788 nm, in addition to the oxygen peak, a part of the argon peak having a higher intensity than the oxygen peak is included. Therefore, the peak intensity of oxygen cannot be detected with high accuracy.

  It is also possible to produce a bandpass filter in a desired detection wavelength range made to order. However, a custom-made bandpass filter is expensive, and the bandpass filter has a problem that the transmittance decreases when the wavelength range is narrowed.

  On the other hand, if the monochromator 17 is used to set the center value of the detection wavelength to 776.5 nm and the wavelength range (one side) to 1 nm, the detection range is 775.5 nm to 777.5 nm, so the influence of the argon peak (noise) It is possible to detect the peak intensity of oxygen with high accuracy without being subjected to this.

  Depending on the type of gas 21 or target 12, there may be no problem in detection accuracy even if a band-pass filter is used. However, in order to detect the peak intensity at a large number of locations in a wide wavelength range using a band-pass filter, it is necessary to prepare a large number of band-pass filters having different detection wavelengths. Such a thing is complicated and difficult to manage economically. Therefore, it is preferable to use the monochromator 17 rather than the band pass filter.

[Step of detecting specific peak intensity]
The step of detecting the specific peak intensity is used to estimate the amount of plasma of the specific substance. This is performed by, for example, a photomultiplier tube (not shown) provided inside the monochromator 17. Instead of the photomultiplier tube, a CCD (Charge Coupled Device) detector or a CMOS (Complementary Metal Oxide Semiconductor) detector can be used. However, since the operation speed of the CCD detector or the CMOS detector is slower than that of the photomultiplier tube, the photomultiplier tube is preferable when the intensity of the plasma light changes in a short time.

[Step of adjusting gas flow rate with reference to specific peak intensity]
The step of adjusting the gas flow rate with reference to the specific peak intensity is executed by, for example, the PEM control device 18. By adjusting the gas flow rate with reference to the specific peak intensity, a thin film with little variation in film thickness and film characteristics can be formed.

[Examples and Comparative Examples]
[Example 1]
A silicon oxide (SiO ₂ ) thin film was formed by a reactive sputtering method using silicon (Si) as a target, argon (Ar) as a sputtering gas, and oxygen (O ₂ ) as a reactive gas. White plate glass was used as the substrate 15. A DC pulse power source was used as the power source 16. In the region of plasma 22, argon plasma light, oxygen plasma light, and silicon plasma light were observed.

  Plasma light was acquired by the collimator 14 and transmitted to the monochromator 17. The monochromator 17 decomposed the plasma light into a spectrum, the center value of the detection wavelength was set to 777 nm close to the oxygen peak, and the wavelength range (one side) was set to 1 nm.

  The peak intensity of the oxygen plasma light detected by the monochromator 17 was converted into an electrical signal and transmitted to the PEM controller 18. The PEM control device 18 transmitted a signal to the mass flow controller 19 so that the peak intensity of the oxygen plasma light was constant. The mass flow controller 19 adjusted the flow rate of oxygen based on the transmitted signal.

  FIG. 4 shows a graph of oxygen flow rate (unit sccm) and discharge voltage (unit V) when the above control is performed. As shown in the graph of FIG. 4, the discharge voltage appropriately followed the change in the oxygen flow rate, and the PEM control was appropriately performed.

  During sputtering, outgas such as moisture and oxygen is generated from the substrate and the like, and the influence thereof may cause variations in the film thickness and characteristics of the thin film in the width direction and flow direction of the substrate.

  For example, when an oxide thin film is formed, the plasma state may become unstable due to the influence of oxygen contained in the outgas, and the thickness and characteristics of the oxide thin film may vary. Therefore, when forming an oxide thin film, it is required that the plasma state be not affected by oxygen contained in the outgas.

  When the sputtering method of the present invention is used, for example, when oxygen is unpredictably generated from the base material 15 as outgas, the peak intensity of the plasma light of oxygen is accurately detected, so that the oxygen generated from the base material 15 can be separated. Only the oxygen supplied through the mass flow controller 19 can be reduced in real time.

  Thereby, the sum of the amount of oxygen generated from the base material 15 and the amount of oxygen supplied through the mass flow controller 19 can be made constant by PEM control. By performing such PEM control, the plasma 22 is stabilized. When the plasma 22 is stabilized, variations in film thickness and characteristics are less likely to occur in the width direction and flow direction of the substrate 15. As described above, since the operation speed of the photomultiplier tube in the monochromator 17 is extremely high, even when the amount of oxygen generated from the base material 15 changes abruptly, PEM control is performed to keep the sum of oxygen amounts constant. Delay is unlikely to occur.

Similarly, when a silicon oxide (SiO ₂ ) thin film was formed, the center value of the detection wavelength was set to 251 nm close to the peak wavelength of silicon, and the wavelength range (one side) was set to 1 nm. Otherwise, the flow rate of oxygen was adjusted in the same manner as described above with reference to the peak intensity of silicon.

  FIG. 5 shows a graph of the oxygen flow rate (unit sccm) and the discharge voltage (unit V) when the above control is performed. As shown in the graph of FIG. 5, the discharge voltage appropriately followed the change in the oxygen flow rate, and the PEM control was appropriately performed.

[Example 2]
A thin film of niobium oxide (Nb ₂ O ₅ ) was formed by a reactive sputtering method using niobium (Nb) as a target, argon (Ar) as a sputtering gas, and oxygen (O ₂ ) as a reactive gas. White plate glass was used as the substrate 15. A DC pulse power source was used as the power source 16. In the region of the plasma 22, argon plasma light, oxygen plasma light, and niobium plasma light were observed.

  Plasma light was acquired by the collimator 14 and transmitted to the monochromator 17. The monochromator 17 decomposed the plasma light into a spectrum, the center value of the detection wavelength was set to 777 nm close to the peak wavelength of oxygen, and the wavelength range (one side) was set to 1 nm.

  The electrical signal of the peak intensity of oxygen detected by the monochromator 17 was transmitted to the PEM controller 18. The PEM control device 18 transmitted a signal to the mass flow controller 19 so that the peak intensity of oxygen was constant. The mass flow controller 19 adjusted the flow rate of oxygen based on the transmitted signal.

  FIG. 6 shows a graph of the oxygen flow rate (unit sccm) and the discharge voltage (unit V) when the above control is performed. As shown in the graph of FIG. 6, the discharge voltage appropriately followed the change in the oxygen flow rate, and the PEM control was appropriately performed. Although the linearity is broken at the right end of the graph, this portion is not actually used, so there is no practical effect.

Similarly, when forming a thin film of niobium oxide (Nb ₂ O ₅ ), the center value of the detection wavelength was set to 507 nm close to the peak wavelength of niobium, and the wavelength range (one side) was set to 1 nm. Otherwise, the flow rate of oxygen was adjusted in the same manner as above with reference to the peak intensity of niobium.

  FIG. 7 shows a graph of the oxygen flow rate (unit sccm) and the discharge voltage (unit V) when the above control is performed. As shown in the graph of FIG. 7, the discharge voltage appropriately followed the change in the oxygen flow rate, and the PEM control was appropriately performed. Although the linearity is broken at the right end of the graph, this portion is not actually used, so there is no practical effect.

[Comparative Example 1]
A silicon oxide (SiO ₂ ) thin film was formed by a reactive sputtering method using silicon (Si) as a target, argon (Ar) as a sputtering gas, and oxygen (O ₂ ) as a reactive gas. A band pass filter was used instead of the monochromator. A bandpass filter having a wavelength range of 772 nm to 788 nm close to the peak wavelength of oxygen was selected. Other than that was carried out similarly to Example 1, and adjusted the oxygen flow volume with reference to the peak intensity of oxygen. In this case, the PEM control was appropriately performed as in FIG.

Similarly, when a thin film of silicon oxide (SiO ₂ ) was formed, a bandpass filter having a wavelength range of 280 nm to 296 nm close to the silicon peak was selected. Otherwise, the flow rate of oxygen gas was adjusted in the same manner as described above with reference to the peak intensity of silicon. FIG. 8 shows a graph of the oxygen flow rate (unit sccm) and the discharge voltage (unit V) when the above control is performed. As shown in the graph of FIG. 8, the discharge voltage did not follow the change in the oxygen flow rate, and PEM control was impossible. This is because the bandpass filter has a wide wavelength range, so that light of substances other than silicon, such as argon, enters as noise in addition to the silicon peak, and the peak intensity of silicon cannot be detected accurately.

[Comparative Example 2]
A thin film of niobium oxide (Nb ₂ O ₅ ) was formed by a reactive sputtering method using niobium (Nb) as a target, argon (Ar) as a sputtering gas, and oxygen (O ₂ ) as a reactive gas. A band pass filter was used instead of the monochromator. A bandpass filter having a wavelength range of 772 nm to 788 nm close to the peak wavelength of oxygen was selected. Otherwise, the flow rate of oxygen gas was adjusted in the same manner as in Example 2 with reference to the peak intensity of oxygen.

  FIG. 9 shows a graph of the oxygen flow rate (unit sccm) and the discharge voltage (unit V) when the above control is performed. As shown in the graph of FIG. 9, the discharge voltage did not follow the change in the oxygen flow rate, and PEM control was impossible. This is because, as shown in FIG. 3, since the bandpass filter has a wide wavelength range, argon light stronger than the oxygen peak enters as noise, and the peak intensity of oxygen cannot be detected accurately.

Similarly, when a thin film of niobium oxide (Nb ₂ O ₅ ) was formed, a bandpass filter having a wavelength of 400 nm to 420 nm close to the peak wavelength of niobium was selected. Otherwise, the flow rate of oxygen gas was adjusted in the same manner as in Example 2 with reference to the peak intensity of niobium. In this case, the PEM control was appropriately performed as in FIG.

  Table 1 shows a summary of examples and comparative examples.

  In Examples 1 and 2, the wavelength range was set so as to exclude noise that hinders detection of the specific peak intensity. As a result, PEM control can be performed by referring to any specific peak intensity of oxygen or silicon in Example 1, and PEM control can be performed by referring to any specific peak intensity of oxygen or niobium in Example 2. Was possible. In other words, PEM control was possible without being restricted by gas and target material. Therefore, all the evaluations were appropriate (◯).

  In Comparative Examples 1 and 2, the center value of the detection wavelength is discretely determined in advance, and a bandpass filter having a wide wavelength range is used. Even when a band-pass filter was used, PEM control was possible when noise that would hinder detection of the specific peak intensity did not enter (when oxygen was referred to in Comparative Example 1 and niobium was referred to in Comparative Example 2).

  However, when multiple peaks are close to each other, the wavelength range could not be set so as to exclude noise that hinders detection of specific peak intensity, so when noise that hinders detection of specific peak intensity entered PEM control was impossible (when silicon was used in Comparative Example 1 and oxygen was used in Comparative Example 2).

  As described above, in Comparative Examples 1 and 2, the gas or target substance used for PEM control is restricted, which may cause inconvenience. Therefore, all evaluations were inappropriate (X).

[Monochromator]
A plasma monitor H-20V manufactured by Horiba Joban Yvon was used as the monochromator.

[PEM controller]
Gencoa Speedflo was used as the PEM controller.

  Note that the thin film formation method of the present invention is not limited to the sputtering method, and can be applied to other film formation methods such as a plasma CVD method.

  Although there is no restriction | limiting in the use of the film-forming method of this invention, The film-forming method of this invention is used especially suitably, when forming a thin film using the reactive sputtering method.

DESCRIPTION OF SYMBOLS 10 Sputtering device 11 Chamber 12 Target 13 Electrode 14 Collimator 15 Base material 16 Power source 17 Monochromator 18 PEM control device 19 Mass flow controller 20 Gas introduction pipe 21 Gas 22 Plasma

Claims (4)

At least a plasma of each of the film forming material and the constituent material of the gas is generated in a chamber supplied with at least a substrate, a film forming material, and a gas used for forming the thin film, A thin film forming method for forming the thin film on the surface of the substrate while adjusting the flow rate of the gas with reference to emission intensity,
Selecting a specific substance contained in the constituent substance;
Selecting a specific peak included in a spectrum of light emitted by the plasma of the specific substance;
Obtaining plasma light including the specific peak;
Decomposing the plasma light into a spectrum;
Setting the detection wavelength range of the specific peak intensity such that the wavelength of the specific peak, that is, the specific peak wavelength is included, and noise that impedes detection of the intensity of the specific peak, that is, the specific peak intensity is eliminated; ,
Detecting the specific peak intensity in the detection wavelength range;
A method for forming a thin film, comprising the step of adjusting the flow rate of the gas with reference to the specific peak intensity.   2. The thin film deposition method according to claim 1, wherein a detection wavelength range of the specific peak intensity can be set continuously.   The thin film deposition method according to claim 1 or 2, wherein the detection wavelength range of the specific peak intensity is set by a monochromator.   4. The method for forming a thin film according to claim 1, wherein the detection wavelength range is 1 nm or less on one side.

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