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JP2016148541A - Non-contact temperature sensor - Google Patents

Non-contact temperature sensor Download PDF

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JP2016148541A
JP2016148541A JP2015024283A JP2015024283A JP2016148541A JP 2016148541 A JP2016148541 A JP 2016148541A JP 2015024283 A JP2015024283 A JP 2015024283A JP 2015024283 A JP2015024283 A JP 2015024283A JP 2016148541 A JP2016148541 A JP 2016148541A
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insulating film
temperature sensor
contact temperature
film
infrared
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JP6511845B2 (en
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学司 魚住
Satoshi Uozumi
学司 魚住
中村 賢蔵
Kenzo Nakamura
賢蔵 中村
田里 和義
Kazuyoshi Tasato
和義 田里
平野 晋吾
Shingo Hirano
晋吾 平野
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Mitsubishi Materials Corp
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Mitsubishi Materials Corp
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Abstract

PROBLEM TO BE SOLVED: To provide a non-contact temperature sensor that is light-weight and achieves prevention of an increase in cost of materials and high sensitivity even when incident directions of infrared rays are somewhat uneven.SOLUTION: A non-contact temperature sensor comprises a sensor 2 that receives infrared rays IR and a support 3 that supports the sensor. The sensor has an insulating film 4, a thin-film thermistor 5 that is patterned on a surface of the insulating film using a thermistor material, a pair of comb electrodes that have teeth and are patterned on the thin-film thermistor in such a manner that the comb electrodes face each other, a pair of pattern electrodes that are patterned on the surface of the insulating film and have one end connected to the pair of comb electrodes, and an infrared reflective film 8 that is patterned on the surface of the insulating film and reflects the infrared rays. The support supports the sensor in such a manner that the thin-film thermistor faces an object to be measured and the insulating film is bent at an angle at which the infrared reflective film reflects infrared rays from the object to be measured to the thin-film thermistor.SELECTED DRAWING: Figure 1

Description

本発明は、遠方からの輻射を集束して輻射に対する感度を高めた非接触温度センサに関する。   The present invention relates to a non-contact temperature sensor in which radiation from a distance is focused and sensitivity to the radiation is increased.

一般に、複写機やプリンタに使用されている定着ローラ等の測定対象物の温度を測定するために、測定対象物に対向配置させ、その輻射熱を受けて温度を測定する非接触温度センサが設置されている。このような非接触温度センサは、例えば特許文献1には、輻射熱エネルギーを集熱する反射鏡と、反射鏡による集光部に感熱素子を設置した輻射熱センサが提案されている。この輻射熱センサでは、感熱素子にチップサーミスタを用いている。   In general, in order to measure the temperature of an object to be measured such as a fixing roller used in a copying machine or a printer, a non-contact temperature sensor that is placed opposite the object to be measured and receives the radiant heat to measure the temperature is installed. ing. As such a non-contact temperature sensor, for example, Patent Document 1 proposes a reflecting mirror that collects radiant heat energy and a radiant heat sensor in which a heat sensitive element is installed in a condensing part of the reflecting mirror. In this radiant heat sensor, a chip thermistor is used as a thermal element.

特開平7−181083号公報Japanese Patent Laid-Open No. 7-181083

上記従来の技術には、以下の課題が残されている。
従来の非接触温度センサでは、遠方の測定対象物からの輻射に対する感度を高めるために感熱素子であるチップサーミスタに赤外線を集束させる反射鏡部材を用意する必要があった。このため、反射鏡部材により全体の重量が増してしまうと共に、部材コストが増大してしまうという不都合があった。また、チップサーミスタに輻射熱を集束させる必要があるが、測定対象物からの輻射熱(赤外線)の入射方向にばらつきがあると、ピンポイントであるチップサーミスタに集光しきれず、感度が低下してしまう問題があった。
The following problems remain in the conventional technology.
In the conventional non-contact temperature sensor, it is necessary to prepare a reflecting mirror member that focuses infrared rays on a chip thermistor that is a thermal element in order to increase sensitivity to radiation from a distant measurement object. For this reason, there existed a problem that the whole weight will increase by a reflecting mirror member, and member cost will increase. In addition, it is necessary to focus the radiant heat on the chip thermistor. However, if the incident direction of the radiant heat (infrared rays) from the object to be measured varies, the chip thermistor, which is a pinpoint, cannot be focused, and the sensitivity decreases. There was a problem.

本発明は、前述の課題に鑑みてなされたもので、軽量で部材コストの増大を抑制でき、さらに赤外線の入射方向に多少のばらつきがあっても高い感度を得ることができる非接触温度センサを提供することを目的とする。   The present invention has been made in view of the above-mentioned problems, and is a non-contact temperature sensor that is light in weight, can suppress an increase in member cost, and can obtain high sensitivity even if there is some variation in the incident direction of infrared rays. The purpose is to provide.

本発明は、前記課題を解決するために以下の構成を採用した。すなわち、第1の発明に係る非接触温度センサは、赤外線を受光するセンサ部と、前記センサ部を支持する支持体とを備え、前記センサ部が、絶縁性フィルムと、前記絶縁性フィルムの表面にサーミスタ材料でパターン形成された薄膜サーミスタ部と、前記薄膜サーミスタ部の上及び下の少なくとも一方に複数の櫛部を有して互いに対向してパターン形成された一対の櫛型電極と、一端が前記一対の櫛型電極に接続され前記絶縁性フィルムの表面にパターン形成された一対のパターン電極と、前記絶縁性フィルムの表面にパターン形成され赤外線を反射する赤外線反射膜とを備え、前記支持体が、測定対象物に対して前記薄膜サーミスタ部を対向配置すると共に前記赤外線反射膜が前記測定対象物からの赤外線を前記薄膜サーミスタ部へ向けて反射する角度に前記絶縁性フィルムを曲げて支持していることを特徴とする。   The present invention employs the following configuration in order to solve the above problems. That is, the non-contact temperature sensor according to the first invention includes a sensor unit that receives infrared rays and a support that supports the sensor unit, and the sensor unit includes an insulating film and a surface of the insulating film. A thin film thermistor portion patterned with a thermistor material, a pair of comb electrodes having a plurality of comb portions above and below the thin film thermistor portion and patterned to face each other, and one end of the pair of comb electrodes A pair of pattern electrodes connected to a pair of comb-shaped electrodes and patterned on the surface of the insulating film; and an infrared reflective film that is patterned on the surface of the insulating film and reflects infrared rays; The thin film thermistor portion is disposed opposite to the measurement object, and the infrared reflecting film directs infrared rays from the measurement object to the thin film thermistor portion. And wherein the supporting bending the insulating film at an angle of reflection.

この非接触温度センサでは、支持体が、測定対象物に対して薄膜サーミスタ部を対向配置すると共に赤外線反射膜が測定対象物からの赤外線を薄膜サーミスタ部へ向けて反射する角度に絶縁性フィルムを曲げて支持しているので、反射鏡や反射板を別途用意する必要がなく、柔軟なセンサ部を曲げて設置するだけで赤外線反射膜で赤外線を薄膜サーミスタ部へ集光させることができる。また、別部材として反射鏡や反射板を取り付けた場合に比べて、薄い赤外線反射膜を絶縁性フィルムに成膜しているので、全体を軽量にすることが可能になる。さらに、薄膜サーミスタ部がチップサーミスタに比べて広い面積で赤外線を受光可能であり、赤外線の入射方向がある程度ばらついても赤外線反射膜で反射した赤外線を薄膜サーミスタ部で受けることができ、高い感度を得ることができる。なお、センサ部が柔軟であるので、赤外線の入射方向や角度に応じて、絶縁性フィルムの曲げ角度を変化させることで、赤外線反射膜の角度を調整し、集光性を制御することも容易である。   In this non-contact temperature sensor, the support has the thin film thermistor portion disposed opposite to the measurement object, and the infrared reflection film reflects the infrared rays from the measurement object toward the thin film thermistor portion at an angle. Since it is supported by bending, it is not necessary to separately prepare a reflecting mirror or a reflecting plate, and infrared rays can be condensed on the thin film thermistor portion with an infrared reflecting film simply by bending and installing a flexible sensor portion. In addition, since a thin infrared reflecting film is formed on the insulating film as compared with a case where a reflecting mirror or a reflecting plate is attached as a separate member, the overall weight can be reduced. In addition, the thin film thermistor part can receive infrared light over a wider area than the chip thermistor, and even if the incident direction of infrared light varies to some extent, the thin film thermistor part can receive the infrared light reflected by the infrared reflective film. Can be obtained. In addition, since the sensor unit is flexible, it is easy to adjust the angle of the infrared reflecting film and control the light collecting property by changing the bending angle of the insulating film according to the incident direction and angle of infrared rays. It is.

第2の発明に係る非接触温度センサは、第1の発明において、前記絶縁性フィルムが、帯状に形成され、前記薄膜サーミスタ部が、前記絶縁性フィルムの中央に配されていると共に、一対の前記赤外線反射膜が、前記薄膜サーミスタ部を挟んで前記絶縁性フィルムの両端側に配されていることを特徴とする。
すなわち、この非接触温度センサでは、薄膜サーミスタ部が、帯状の絶縁性フィルムの中央に配されていると共に、一対の赤外線反射膜が、薄膜サーミスタ部を挟んで絶縁性フィルムの両端側に配されているので、表面を内側にして絶縁性フィルムを凹形状に湾曲させることで、両側にある一対の赤外線反射膜で赤外線を反射させて中央の薄膜サーミスタ部に集光することができる。
A non-contact temperature sensor according to a second invention is the non-contact temperature sensor according to the first invention, wherein the insulating film is formed in a strip shape, the thin film thermistor portion is arranged in the center of the insulating film, and a pair of The infrared reflective film is disposed on both ends of the insulating film with the thin film thermistor portion interposed therebetween.
That is, in this non-contact temperature sensor, the thin film thermistor portion is disposed at the center of the strip-shaped insulating film, and the pair of infrared reflecting films are disposed on both ends of the insulating film with the thin film thermistor portion interposed therebetween. Therefore, by curving the insulating film in a concave shape with the surface facing inward, the infrared rays can be reflected by the pair of infrared reflecting films on both sides and condensed on the central thin film thermistor portion.

第3の発明に係る非接触温度センサは、第1の発明において、前記絶縁性フィルムが、十字形状に形成され、前記薄膜サーミスタ部が、前記絶縁性フィルムの中央に配されていると共に、前記絶縁性フィルムの4つの端部側に、前記赤外線反射膜がそれぞれ配されていることを特徴とする。
すなわち、この非接触温度センサでは、薄膜サーミスタ部が、十字形状の絶縁性フィルムの中央に配されていると共に、絶縁性フィルムの4つの端部側に、赤外線反射膜がそれぞれ配されているので、絶縁性フィルムの4つの端部側を中央部を囲むようにそれぞれ内側に折り曲げることで、4つの赤外線反射膜で赤外線を反射させて中央の薄膜サーミスタ部に集光することができる。
A non-contact temperature sensor according to a third invention is the non-contact temperature sensor according to the first invention, wherein the insulating film is formed in a cross shape, and the thin film thermistor portion is arranged at the center of the insulating film. The infrared reflective film is disposed on each of four end portions of the insulating film.
That is, in this non-contact temperature sensor, the thin film thermistor portion is disposed at the center of the cross-shaped insulating film, and the infrared reflecting films are disposed on the four end portions of the insulating film, respectively. By folding the four end portions of the insulating film inward so as to surround the central portion, the infrared rays can be reflected by the four infrared reflecting films and condensed on the central thin film thermistor portion.

第4の発明に係る非接触温度センサは、第1の発明において、前記支持体が、前記絶縁性フィルムを開口端部と閉塞端部とを有した筒形状に曲げて支持し、前記赤外線反射膜を内周面全体に配すると共に、前記閉塞端部の内面に前記薄膜サーミスタ部を配していることを特徴とする。
すなわち、この非接触温度センサでは、支持体が、絶縁性フィルムを開口端部と閉塞端部とを有した筒形状に曲げて支持し、赤外線反射膜を内周面全体に配すると共に、閉塞端部の内面に薄膜サーミスタ部を配しているので、薄膜サーミスタ部を囲んだ筒形状の赤外線反射膜全体で赤外線を反射させて閉塞端部の薄膜サーミスタ部に集光することができる。
The non-contact temperature sensor according to a fourth aspect is the non-contact temperature sensor according to the first aspect, wherein the support supports the insulating film by bending the insulating film into a cylindrical shape having an open end and a closed end, and the infrared reflection. The film is disposed on the entire inner peripheral surface, and the thin film thermistor portion is disposed on the inner surface of the closed end portion.
That is, in this non-contact temperature sensor, the support supports the insulating film by bending it into a cylindrical shape having an open end and a closed end, and arranges the infrared reflecting film over the entire inner peripheral surface, and closes it. Since the thin film thermistor portion is arranged on the inner surface of the end portion, infrared rays can be reflected by the entire cylindrical infrared reflecting film surrounding the thin film thermistor portion and condensed on the thin film thermistor portion at the closed end portion.

第5の発明に係る非接触温度センサは、第1から第4の発明のいずれかにおいて、前記赤外線反射膜が複数設けられ、そのうちの少なくとも一部が、前記パターン電極で形成されていることを特徴とする。
すなわち、この非接触温度センサでは、赤外線反射膜が複数設けられ、そのうちの少なくとも一部が、パターン電極で形成されているので、製造工程が簡便になり低コスト化することが可能になる。
A non-contact temperature sensor according to a fifth invention is the non-contact temperature sensor according to any one of the first to fourth inventions, wherein a plurality of the infrared reflecting films are provided, at least a part of which is formed by the pattern electrode. Features.
That is, in this non-contact temperature sensor, since a plurality of infrared reflecting films are provided, and at least a part of them is formed of a pattern electrode, the manufacturing process can be simplified and the cost can be reduced.

本発明によれば、以下の効果を奏する。
すなわち、本発明に係る非接触温度センサによれば、支持体が、測定対象物に対して薄膜サーミスタ部を対向配置すると共に赤外線反射膜が測定対象物からの赤外線を薄膜サーミスタ部へ向けて反射する角度に絶縁性フィルムを曲げて支持しているので、軽量であると共に反射板等の追加部材が不要であり、部材コストの増大を抑制でき、さらに赤外線の入射方向に多少のばらつきがあっても高い感度を得ることができる。
したがって、本発明の非接触温度センサは、柔軟な絶縁性フィルムを曲げるだけの簡易な構造で赤外線の反射と集光とを容易に設定することができ、遠方からの輻射も効率的に集束して輻射に対する高い感度を得ることができる。
The present invention has the following effects.
That is, according to the non-contact temperature sensor according to the present invention, the support member has the thin film thermistor portion opposed to the measurement object, and the infrared reflection film reflects the infrared ray from the measurement object toward the thin film thermistor portion. Since the insulating film is bent and supported at the angle to which it is attached, it is lightweight and does not require additional members such as reflectors, which can suppress an increase in member cost, and there is some variation in the incident direction of infrared rays. High sensitivity can be obtained.
Therefore, the non-contact temperature sensor of the present invention can easily set the reflection and the collection of infrared rays with a simple structure that only bends a flexible insulating film, and can effectively focus radiation from a distance. High sensitivity to radiation can be obtained.

本発明に係る非接触温度センサの第1実施形態を示す側面図である。1 is a side view showing a first embodiment of a non-contact temperature sensor according to the present invention. 第1実施形態において、センサ部を示す平面図及びA−A線断面図である。In 1st Embodiment, it is the top view and AA sectional view taken on the line which show a sensor part. 本発明に係る非接触温度センサの第2実施形態を示す斜視図である。It is a perspective view which shows 2nd Embodiment of the non-contact temperature sensor which concerns on this invention. 第2実施形態において、センサ部を示す平面図である。In 2nd Embodiment, it is a top view which shows a sensor part. 本発明に係る非接触温度センサの第3実施形態を示す斜視図である。It is a perspective view which shows 3rd Embodiment of the non-contact temperature sensor which concerns on this invention. 第3実施形態において、展開したセンサ部を示す平面図である。In 3rd Embodiment, it is a top view which shows the expanded sensor part. 本発明に係る非接触温度センサの第4実施形態を示す側面図である。It is a side view which shows 4th Embodiment of the non-contact temperature sensor which concerns on this invention. 第4実施形態において、センサ部を示す平面図及びB−B線断面図である。In 4th Embodiment, it is a top view and a BB line sectional view showing a sensor part.

以下、本発明に係る非接触温度センサの第1実施形態を、図1及び図2を参照しながら説明する。なお、以下の説明に用いる各図面では、各部材を認識可能又は認識容易な大きさとするために縮尺を適宜変更している。   Hereinafter, a non-contact temperature sensor according to a first embodiment of the present invention will be described with reference to FIGS. 1 and 2. In each drawing used for the following description, the scale is appropriately changed in order to make each member recognizable or easily recognizable.

本実施形態の非接触温度センサ1は、図1及び図2に示すように、赤外線IRを受光するセンサ部2と、センサ部2を支持する支持体3とを備えている。
上記センサ部2は、絶縁性フィルム4と、絶縁性フィルム4の表面にサーミスタ材料でパターン形成された薄膜サーミスタ部5と、薄膜サーミスタ部5の上に複数の櫛部6aを有して互いに対向してパターン形成された一対の櫛型電極6と、一端が一対の櫛型電極6に接続され絶縁性フィルム4の表面にパターン形成された一対のパターン電極7と、絶縁性フィルム4の表面にパターン形成され赤外線IRを反射する赤外線反射膜8とを備えている。
As shown in FIGS. 1 and 2, the non-contact temperature sensor 1 of the present embodiment includes a sensor unit 2 that receives infrared IR and a support body 3 that supports the sensor unit 2.
The sensor part 2 has an insulating film 4, a thin film thermistor part 5 patterned with a thermistor material on the surface of the insulating film 4, and a plurality of comb parts 6 a on the thin film thermistor part 5. A pair of comb-shaped electrodes 6 that are patterned in this manner, a pair of pattern electrodes 7 that have one end connected to the pair of comb-shaped electrodes 6 and patterned on the surface of the insulating film 4, and a pattern on the surface of the insulating film 4 And an infrared reflecting film 8 that is formed and reflects infrared IR.

上記支持体3は、測定対象物Mに対して薄膜サーミスタ部5を対向配置すると共に赤外線反射膜8が測定対象物Mからの赤外線IRを薄膜サーミスタ部5へ向けて反射する角度に絶縁性フィルム4を曲げて支持している。
上記絶縁性フィルム4は、帯状に形成されている。この絶縁性フィルム4は、例えば厚さ7.5〜125μmのポリイミド樹脂シートで形成されている。
上記薄膜サーミスタ部5は、絶縁性フィルム4の中央に配されていると共に、一対の赤外線反射膜8が、薄膜サーミスタ部5を挟んで絶縁性フィルム4の両端側に配されている。
The support 3 has an insulating film at an angle at which the thin film thermistor portion 5 is disposed opposite to the measurement object M and the infrared reflection film 8 reflects the infrared IR from the measurement object M toward the thin film thermistor portion 5. 4 is supported by bending.
The insulating film 4 is formed in a strip shape. This insulating film 4 is formed of, for example, a polyimide resin sheet having a thickness of 7.5 to 125 μm.
The thin film thermistor portion 5 is disposed at the center of the insulating film 4, and a pair of infrared reflective films 8 are disposed on both ends of the insulating film 4 with the thin film thermistor portion 5 interposed therebetween.

上記一対のパターン電極7は、例えばNiCr膜とPt膜との積層金属膜でパターン形成され、互いに対向状態に配した櫛形パターンの櫛形電極部分(櫛部6a)を有している。これらパターン電極7の櫛形電極部分は、帯状の絶縁性フィルム4の延在方向に沿って延在するように配置されている。また、一対のパターン電極7の端部には、リード線(図示略)の一端が半田材で接合される。なお、絶縁性フィルム4及び支持体3に貫通孔を形成してリード線を挿通させても構わない。   The pair of pattern electrodes 7 is formed by patterning, for example, a multilayer metal film of a NiCr film and a Pt film, and has comb-shaped electrode portions (comb portions 6a) arranged in a mutually opposed state. The comb electrode portions of the pattern electrodes 7 are arranged so as to extend along the extending direction of the strip-shaped insulating film 4. One end of a lead wire (not shown) is joined to the end portions of the pair of pattern electrodes 7 with a solder material. It should be noted that through holes may be formed in the insulating film 4 and the support 3 and lead wires may be inserted.

上記薄膜サーミスタ部5は、例えば膜厚100〜1000nmのTiAlN等の窒化物からなる薄膜サーミスタ材料で、矩形状に絶縁性フィルム4の中央にパターン形成されている。
特に、本実施形態の薄膜サーミスタ部5は、一般式:TiAl(0.70≦y/(x+y)≦0.95、0.4≦z≦0.5、x+y+z=1)で示される金属窒化物からなり、その結晶構造が、六方晶系のウルツ鉱型の単相である。
The thin film thermistor portion 5 is a thin film thermistor material made of nitride such as TiAlN having a film thickness of 100 to 1000 nm, for example, and is patterned in the center of the insulating film 4 in a rectangular shape.
In particular, the thin film thermistor portion 5 of the present embodiment has a general formula: Ti x Al y N z (0.70 ≦ y / (x + y) ≦ 0.95, 0.4 ≦ z ≦ 0.5, x + y + z = 1). The crystal structure is a single phase of a hexagonal wurtzite type.

また、本実施形態の非接触温度センサ1は、絶縁性フィルム4の表面に薄膜サーミスタ部5を覆う保護膜9を備えている。なお、さらに絶縁性フィルム4の表面の保護膜9を覆う絶縁性の保護シートを接着しても構わない。
上記保護膜9は、絶縁性樹脂膜等であり、例えば厚さ20μmのポリイミド膜が採用される。この保護膜9は、薄膜サーミスタ部5と共に櫛部6aを覆って矩形状にパターン形成されている。
Further, the non-contact temperature sensor 1 of the present embodiment includes a protective film 9 that covers the thin film thermistor portion 5 on the surface of the insulating film 4. Further, an insulating protective sheet that covers the protective film 9 on the surface of the insulating film 4 may be adhered.
The protective film 9 is an insulating resin film, for example, a polyimide film having a thickness of 20 μm is employed. The protective film 9 is patterned in a rectangular shape so as to cover the comb portion 6 a together with the thin film thermistor portion 5.

上記一対の赤外線反射膜8は、AlやAu等の金属薄膜を蒸着又はスパッタリングによって絶縁性フィルム4上に矩形状にパターン形成されている。   The pair of infrared reflection films 8 are formed in a rectangular pattern on the insulating film 4 by depositing or sputtering a metal thin film such as Al or Au.

上記センサ部2は、薄膜サーミスタ部5を内側にして全体が略U字状になるように撓まされた状態で絶縁性フィルム4の裏面を接着剤等によって支持体3に貼り付けられている。なお、支持体3は、センサ部2の湾曲状態を保持可能な形状とされている。絶縁性フィルム4の湾曲度合いは、測定対象物Mからの赤外線IRが一対の赤外線反射膜8で全反射されて中央の薄膜サーミスタ部5へ入射されるように設定されている。   The sensor part 2 is attached to the support 3 with an adhesive or the like on the back surface of the insulating film 4 in a state where the thin film thermistor part 5 is bent inside so as to be substantially U-shaped. . In addition, the support body 3 has a shape that can hold the curved state of the sensor unit 2. The degree of curvature of the insulating film 4 is set so that the infrared IR from the measuring object M is totally reflected by the pair of infrared reflecting films 8 and enters the central thin film thermistor section 5.

このように本実施形態の非接触温度センサ1では、支持体3が、測定対象物Mに対して薄膜サーミスタ部5を対向配置すると共に赤外線反射膜8が測定対象物Mからの赤外線IRを薄膜サーミスタ部5へ向けて反射する角度に絶縁性フィルム4を曲げて支持しているので、反射鏡や反射板を別途用意する必要がなく、柔軟なセンサ部2を曲げて設置するだけで赤外線反射膜8で赤外線IRを中央の薄膜サーミスタ部5へ集光させることができる。   As described above, in the non-contact temperature sensor 1 according to the present embodiment, the support 3 disposes the thin film thermistor portion 5 opposite to the measurement object M, and the infrared reflection film 8 thins the infrared IR from the measurement object M. Since the insulating film 4 is bent and supported at an angle that reflects toward the thermistor portion 5, there is no need to prepare a separate reflector or reflector, and only the flexible sensor portion 2 is bent and installed. The infrared ray IR can be condensed to the central thin film thermistor portion 5 by the film 8.

また、別部材として反射鏡や反射板を取り付けた場合に比べて、薄い赤外線反射膜8を絶縁性フィルム4に成膜しているので、全体を軽量にすることが可能になる。さらに、薄膜サーミスタ部5がチップサーミスタに比べて広い面積で赤外線IRを受光可能であり、赤外線IRの入射方向がある程度ばらついても赤外線反射膜8で反射した赤外線IRを薄膜サーミスタ部5で受けることができ、高い感度を得ることができる。なお、センサ部が柔軟であるので、赤外線IRの入射方向や角度に応じて、絶縁性フィルム4の曲げ角度を変化させることで、赤外線反射膜8の角度を調整し、集光性を制御することも容易である。この場合、支持体3を、絶縁性フィルム4の曲げ角度を調整可能に可動なものとしても構わない。   Moreover, since the thin infrared reflecting film 8 is formed on the insulating film 4 as compared with the case where a reflecting mirror or a reflecting plate is attached as a separate member, the whole can be reduced in weight. Further, the thin film thermistor unit 5 can receive infrared IR over a wider area than the chip thermistor, and the thin film thermistor unit 5 receives the infrared IR reflected by the infrared reflecting film 8 even if the incident direction of the infrared IR varies to some extent. And high sensitivity can be obtained. In addition, since the sensor part is flexible, the angle of the infrared reflecting film 8 is adjusted by changing the bending angle of the insulating film 4 according to the incident direction and angle of the infrared IR, and the light collecting property is controlled. It is also easy. In this case, the support 3 may be movable so that the bending angle of the insulating film 4 can be adjusted.

また、薄膜サーミスタ部5が、帯状の絶縁性フィルム4の中央に配されていると共に、一対の赤外線反射膜8が、薄膜サーミスタ部5を挟んで絶縁性フィルム4の両端側に配されているので、表面を内側にして絶縁性フィルム4を凹形状に湾曲させることで、両側にある一対の赤外線反射膜8で赤外線を反射させて薄膜サーミスタ部5に集光することができる。   Further, the thin film thermistor portion 5 is disposed at the center of the strip-shaped insulating film 4, and a pair of infrared reflecting films 8 are disposed on both ends of the insulating film 4 with the thin film thermistor portion 5 interposed therebetween. Therefore, by curving the insulating film 4 in a concave shape with the surface facing inward, the infrared rays can be reflected by the pair of infrared reflecting films 8 on both sides and condensed on the thin film thermistor portion 5.

次に、本発明に係る温度センサの第2及び第3実施形態について、図3から図6を参照して以下に説明する。なお、以下の各実施形態の説明において、上記実施形態において説明した同一の構成要素には同一の符号を付し、その説明は省略する。   Next, 2nd and 3rd embodiment of the temperature sensor which concerns on this invention is described below with reference to FIGS. In the following description of each embodiment, the same constituent elements described in the above embodiment are denoted by the same reference numerals, and the description thereof is omitted.

第2実施形態と第1実施形態との異なる点は、第1実施形態では、一対の赤外線反射膜8が帯状の絶縁性フィルム4に形成されているのに対し、第2実施形態の非接触温度センサ21では、図3及び図4に示すように、絶縁性フィルム24が、十字形状に形成され、薄膜サーミスタ部5が、絶縁性フィルム24の中央に配されていると共に、絶縁性フィルム24の4つの端部側に、赤外線反射膜8がそれぞれ配されている点である。   The difference between the second embodiment and the first embodiment is that, in the first embodiment, the pair of infrared reflecting films 8 are formed on the strip-shaped insulating film 4, whereas the non-contact of the second embodiment. In the temperature sensor 21, as shown in FIGS. 3 and 4, the insulating film 24 is formed in a cross shape, and the thin film thermistor portion 5 is arranged at the center of the insulating film 24, and the insulating film 24. The infrared reflection film 8 is disposed on each of the four end portions.

すなわち、第2実施形態では、絶縁性フィルム24の4つの端部が内側に折り曲げられて支持体23に支持されており、薄膜サーミスタ部5の四方から各赤外線反射膜8で反射された赤外線IRが薄膜サーミスタ部5に集光される。
このように第2実施形態の非接触温度センサ21では、薄膜サーミスタ部5が、十字形状の絶縁性フィルム24の中央に配されていると共に、絶縁性フィルム24の4つの端部側に、赤外線反射膜8がそれぞれ配されているので、絶縁性フィルム24の4つの端部側を中央部を囲むように内側にそれぞれ折り曲げることで、4つの赤外線反射膜8で赤外線IRを反射させて中央の薄膜サーミスタ部5に集光することができる。
That is, in the second embodiment, the four end portions of the insulating film 24 are bent inward and supported by the support body 23, and the infrared IR reflected by the respective infrared reflecting films 8 from the four sides of the thin film thermistor portion 5. Is condensed on the thin film thermistor section 5.
As described above, in the non-contact temperature sensor 21 according to the second embodiment, the thin film thermistor portion 5 is arranged at the center of the cross-shaped insulating film 24, and infrared rays are formed on the four end portions of the insulating film 24. Since each of the reflection films 8 is arranged, the four IR reflection films 8 reflect the IR IR by bending the four end portions of the insulating film 24 inward so as to surround the center portion. The light can be condensed on the thin film thermistor section 5.

第3実施形態と第2実施形態との異なる点は、第2実施形態では、4つの赤外線反射膜8の中央に薄膜サーミスタ部5を配して支持体23がセンサ部22を支持しているのに対し、第3実施形態の非接触温度センサ31では、図5及び図6に示すように、支持体33が、絶縁性フィルム34を開口端部と閉塞端部とを有した筒形状に曲げて支持し、赤外線反射膜38を内周面全体に配すると共に、閉塞端部の内面に薄膜サーミスタ部5を配している点である。   The difference between the third embodiment and the second embodiment is that, in the second embodiment, the thin film thermistor portion 5 is arranged at the center of the four infrared reflection films 8 and the support body 23 supports the sensor portion 22. On the other hand, in the non-contact temperature sensor 31 of the third embodiment, as shown in FIGS. 5 and 6, the support 33 has a cylindrical shape in which the insulating film 34 has an open end and a closed end. The infrared reflective film 38 is disposed on the entire inner peripheral surface while being bent and supported, and the thin film thermistor portion 5 is disposed on the inner surface of the closed end.

この第3実施形態では、図5に示すように、センサ部32を展開すると、絶縁性フィルム34が、赤外線反射膜38が形成された帯状のC字状部34Aと、C字状部34Aの中央開口領域に接続され薄膜サーミスタ部5が形成された円形部34Bとで構成されている。この絶縁性フィルム34は、C字状部34Aの両端部を接着することで、筒状となり、内周面に赤外線反射膜38が形成される。   In the third embodiment, as shown in FIG. 5, when the sensor unit 32 is expanded, the insulating film 34 includes a belt-like C-shaped part 34 </ b> A on which the infrared reflecting film 38 is formed, and a C-shaped part 34 </ b> A. It is comprised by the circular part 34B which was connected to the center opening area | region and in which the thin film thermistor part 5 was formed. The insulating film 34 has a cylindrical shape by bonding both end portions of the C-shaped portion 34A, and an infrared reflecting film 38 is formed on the inner peripheral surface.

また、C字状部34Aの内周縁の長さは、円形部34Bの円周長と同じに設定されており、C字状部34Aを筒状にした際に、開口端部を円形部34Bで閉塞して閉塞端部になり、全体として開口部が大きいカップ形状となるように設定されている。さらに、支持体33は、センサ部32を内面で支持可能なカップ形状に形成され、内面に絶縁性フィルム34の裏面を接着してセンサ部32を支持している。   Further, the length of the inner peripheral edge of the C-shaped portion 34A is set to be the same as the circumferential length of the circular portion 34B, and when the C-shaped portion 34A is formed into a cylindrical shape, the opening end portion is the circular portion 34B. It is closed so as to become a closed end portion, and the opening portion is set to have a large cup shape as a whole. Further, the support 33 is formed in a cup shape capable of supporting the sensor unit 32 on the inner surface, and supports the sensor unit 32 by bonding the back surface of the insulating film 34 to the inner surface.

このように第3実施形態の非接触温度センサ31では、支持体33が、絶縁性フィルム34を開口端部と閉塞端部とを有した筒形状に曲げて支持し、赤外線反射膜38を内周面全体に配すると共に、閉塞端部の内面に薄膜サーミスタ部5を配しているので、薄膜サーミスタ部5を囲んだ筒形状の赤外線反射膜38全体で赤外線IRを反射させて閉塞端部の薄膜サーミスタ部5に集光することができる。   As described above, in the non-contact temperature sensor 31 of the third embodiment, the support 33 supports the insulating film 34 by bending it into a cylindrical shape having an open end and a closed end, and the infrared reflective film 38 inside. Since the thin film thermistor portion 5 is disposed on the entire peripheral surface and the inner surface of the closed end portion, the infrared light IR is reflected by the entire cylindrical infrared reflection film 38 surrounding the thin film thermistor portion 5 to thereby close the closed end portion. Can be condensed on the thin film thermistor portion 5.

次に、第4実施形態と第1実施形態との異なる点は、第1実施形態では、パターン電極7と赤外線反射膜8とが別々に設けられているのに対し、第4実施形態の非接触温度センサ41では、赤外線反射膜48が、パターン電極47で形成されている点である。すなわち、第4実施形態では、一対の櫛型電極6から絶縁性フィルム4の両端部へとパターン電極47が延在し、保護膜9で覆われていない部分が、そのままパターン電極47兼赤外線反射膜48となっている。   Next, the difference between the fourth embodiment and the first embodiment is that, in the first embodiment, the pattern electrode 7 and the infrared reflecting film 8 are provided separately, whereas the fourth embodiment is different from the first embodiment. In the contact temperature sensor 41, the infrared reflective film 48 is formed by the pattern electrode 47. That is, in the fourth embodiment, the pattern electrode 47 extends from the pair of comb-shaped electrodes 6 to both ends of the insulating film 4, and the portion not covered with the protective film 9 remains as it is. A film 48 is formed.

このように、第4実施形態の非接触温度センサ41では、赤外線反射膜48が、パターン電極47で形成されているので、製造工程が簡便になり低コスト化することが可能になる。なお、本実施形態では、櫛型電極6から赤外線反射膜48までのパターン電極47は、短い距離で接続しているが、広い面積の赤外線反射膜48(パターン電極47)から薄膜サーミスタ部5の熱が放熱されてしまうことを防ぐために、櫛型電極6から赤外線反射膜48までのパターン電極47の配線を長くかつ細く設定しても構わない。例えば、櫛型電極6から赤外線反射膜48までのパターン電極47の配線を、繰り返し折り返した細いミアンダ形状とすることで、熱の逃げを抑制することができる。
また、一対の赤外線反射膜48のうち、一方だけをパターン電極47としても構わず、赤外線反射膜48が3以上ある場合、全ての赤外線反射膜48又はそのうちの一部をパターン電極47としてもよい。
Thus, in the non-contact temperature sensor 41 of the fourth embodiment, since the infrared reflective film 48 is formed of the pattern electrode 47, the manufacturing process is simplified and the cost can be reduced. In this embodiment, the pattern electrode 47 from the comb electrode 6 to the infrared reflection film 48 is connected at a short distance, but the infrared reflection film 48 (pattern electrode 47) having a large area is connected to the thin film thermistor section 5. In order to prevent heat from being dissipated, the wiring of the pattern electrode 47 from the comb-shaped electrode 6 to the infrared reflecting film 48 may be set long and thin. For example, the escape of heat can be suppressed by forming the wiring of the pattern electrode 47 from the comb electrode 6 to the infrared reflecting film 48 into a thin meander shape that is repeatedly folded.
Further, only one of the pair of infrared reflection films 48 may be the pattern electrode 47, and when there are three or more infrared reflection films 48, all of the infrared reflection films 48 or a part of them may be the pattern electrodes 47. .

なお、本発明の技術範囲は上記各実施形態に限定されるものではなく、本発明の趣旨を逸脱しない範囲において種々の変更を加えることが可能である。   The technical scope of the present invention is not limited to the above embodiments, and various modifications can be made without departing from the spirit of the present invention.

1,21,31,41…非接触温度センサ、2,22,32…センサ部、3,23,33…支持体、4,24,34…絶縁性フィルム、5…薄膜サーミスタ部、6…櫛型電極、6a…櫛部、7,47…パターン電極、8,38,48…赤外線反射膜、IR…赤外線、M…測定対象物   1, 2, 31, 41 ... non-contact temperature sensor, 2, 22, 32 ... sensor part, 3, 23, 33 ... support, 4, 24, 34 ... insulating film, 5 ... thin film thermistor part, 6 ... comb Type electrode, 6a ... comb, 7,47 ... pattern electrode, 8,38,48 ... infrared reflective film, IR ... infrared, M ... measurement object

Claims (5)

赤外線を受光するセンサ部と、
前記センサ部を支持する支持体とを備え、
前記センサ部が、絶縁性フィルムと、前記絶縁性フィルムの表面にサーミスタ材料でパターン形成された薄膜サーミスタ部と、前記薄膜サーミスタ部の上及び下の少なくとも一方に複数の櫛部を有して互いに対向してパターン形成された一対の櫛型電極と、一端が前記一対の櫛型電極に接続され前記絶縁性フィルムの表面にパターン形成された一対のパターン電極と、前記絶縁性フィルムの表面にパターン形成され赤外線を反射する赤外線反射膜とを備え、
前記支持体が、測定対象物に対して前記薄膜サーミスタ部を対向配置すると共に前記赤外線反射膜が前記測定対象物からの赤外線を前記薄膜サーミスタ部へ向けて反射する角度に前記絶縁性フィルムを曲げて支持していることを特徴とする非接触温度センサ。
A sensor unit for receiving infrared rays;
A support for supporting the sensor unit,
The sensor portion has an insulating film, a thin film thermistor portion patterned with a thermistor material on the surface of the insulating film, and a plurality of comb portions above and below the thin film thermistor portion and facing each other. A pair of comb-shaped electrodes patterned, a pair of pattern electrodes having one end connected to the pair of comb-shaped electrodes and patterned on the surface of the insulating film, and a pattern formed on the surface of the insulating film And an infrared reflecting film that reflects infrared rays,
The support is disposed so that the thin film thermistor portion faces the measurement object, and the insulating film is bent at an angle at which the infrared reflection film reflects infrared rays from the measurement object toward the thin film thermistor portion. A non-contact temperature sensor characterized by being supported.
請求項1に記載の非接触温度センサにおいて、
前記絶縁性フィルムが、帯状に形成され、
前記薄膜サーミスタ部が、前記絶縁性フィルムの中央に配されていると共に、一対の前記赤外線反射膜が、前記薄膜サーミスタ部を挟んで前記絶縁性フィルムの両端側に配されていることを特徴とする非接触温度センサ。
The non-contact temperature sensor according to claim 1.
The insulating film is formed in a band shape,
The thin film thermistor portion is disposed in the center of the insulating film, and a pair of the infrared reflective films are disposed on both ends of the insulating film with the thin film thermistor portion interposed therebetween. Non-contact temperature sensor.
請求項1に記載の非接触温度センサにおいて、
前記絶縁性フィルムが、十字形状に形成され、
前記薄膜サーミスタ部が、前記絶縁性フィルムの中央に配されていると共に、前記絶縁性フィルムの4つの端部側に、前記赤外線反射膜がそれぞれ配されていることを特徴とする非接触温度センサ。
The non-contact temperature sensor according to claim 1.
The insulating film is formed in a cross shape,
The non-contact temperature sensor, wherein the thin film thermistor portion is arranged in the center of the insulating film, and the infrared reflecting films are arranged on the four end portions of the insulating film, respectively. .
請求項1に記載の非接触温度センサにおいて、
前記支持体が、前記絶縁性フィルムを開口端部と閉塞端部とを有した筒形状に曲げて支持し、前記赤外線反射膜を内周面全体に配すると共に、前記閉塞端部の内面に前記薄膜サーミスタ部を配していることを特徴とする非接触温度センサ。
The non-contact temperature sensor according to claim 1.
The support supports the insulating film by bending it into a cylindrical shape having an open end and a closed end, and arranges the infrared reflecting film over the entire inner peripheral surface, and on the inner surface of the closed end. A non-contact temperature sensor comprising the thin film thermistor portion.
請求項1から4のいずれか一項に記載の非接触温度センサにおいて、
前記赤外線反射膜が複数設けられ、そのうちの少なくとも一部が、前記パターン電極で形成されていることを特徴とする非接触温度センサ。
The non-contact temperature sensor according to any one of claims 1 to 4,
A non-contact temperature sensor, wherein a plurality of the infrared reflection films are provided, at least a part of which is formed by the pattern electrode.
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