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JP2016032032A - Circuit board and electronic device - Google Patents

Circuit board and electronic device Download PDF

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Publication number
JP2016032032A
JP2016032032A JP2014153949A JP2014153949A JP2016032032A JP 2016032032 A JP2016032032 A JP 2016032032A JP 2014153949 A JP2014153949 A JP 2014153949A JP 2014153949 A JP2014153949 A JP 2014153949A JP 2016032032 A JP2016032032 A JP 2016032032A
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copper plate
bonding material
insulating substrate
circuit board
thickness
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洋一 仮屋園
Yoichi Kayazono
洋一 仮屋園
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Kyocera Corp
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Kyocera Corp
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    • H10W72/5445
    • H10W72/884
    • H10W90/734
    • H10W90/754

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Abstract

PROBLEM TO BE SOLVED: To provide a circuit board and an electronic device, which can improve radiation efficiency while suppressing the occurrence of cracks and the like in an insulating substrate.SOLUTION: A circuit board has an insulating substrate 1, and a copper plate 3 provided on a principal surface of the insulating substrate via a silver-containing bonding material 2. A thickness of the bonding material at a central part of the copper plate is thicker than a thickness of the bonding material at a peripheral part of the copper plate. This can make heat generated at an electronic component 5 be favorably radiated to the insulating substrate 1 side at the central part of the copper plate 3. In addition, since the thickness of the bonding material 2 is thinner on the peripheral part than in the central part of the copper plate 3, diffusion of silver is not likely to occur and stress can be mitigated.SELECTED DRAWING: Figure 1

Description

本発明は、回路基板、および電子装置に関するものである。   The present invention relates to a circuit board and an electronic device.

従来、パワーモジュールまたはスイッチングモジュール等の例えばIGBT(Insulated Gate Bipolar Transistor)などの電子部品が搭載された電子装置に用いられる回路基板として、例えば、絶縁基板の主面に、接合材を介して銅板が接合されたものが用いられる。   2. Description of the Related Art Conventionally, as a circuit board used in an electronic device on which an electronic component such as an IGBT (Insulated Gate Bipolar Transistor) such as a power module or a switching module is mounted, for example, a copper plate is formed on a main surface of an insulating substrate via a bonding material. What was joined is used.

特開2002−343911号公報JP 2002-343911 A

しかしながら、通常、電子部品は、銅板の中央部の上面に配置されるが、電子部品で発生した熱が接合材を介して絶縁基板に十分放熱されていなかった。   However, usually, the electronic component is disposed on the upper surface of the central portion of the copper plate, but the heat generated in the electronic component is not sufficiently dissipated to the insulating substrate via the bonding material.

また、銀を含む接合材によって、銅板を絶縁基板に接合する際に、この銀が銅板内部に拡散する。よって、銅板において銀が拡散した部分は硬度が高くなる。また、回路基板の使用時に熱サイクルが負荷されると、銅板の周縁部に応力が集中しやすい。よって、銅板の周縁部では、硬度が高くなったことにより、集中しやすい応力を緩和できず、絶縁基板におけるクラックの発生や、銅板の絶縁基板からの剥離が起きやすかった。   Further, when the copper plate is bonded to the insulating substrate by the bonding material containing silver, the silver diffuses inside the copper plate. Therefore, the hardness of the portion of the copper plate where silver has diffused increases. Further, if a thermal cycle is applied when the circuit board is used, stress tends to concentrate on the peripheral edge of the copper plate. Therefore, at the peripheral portion of the copper plate, the stress that tends to concentrate cannot be relieved due to the increased hardness, and cracks in the insulating substrate and peeling of the copper plate from the insulating substrate are likely to occur.

本発明の目的は、前記の問題を鑑みて、絶縁基板のクラック発生、又は銅板の剥離を抑制しつつ、放熱効率を向上させることができる回路基板、および電子装置を提供することにある。   In view of the above problems, an object of the present invention is to provide a circuit board and an electronic device that can improve heat dissipation efficiency while suppressing generation of cracks in an insulating substrate or peeling of a copper plate.

本発明の一つの態様の回路基板は、絶縁基板と、該絶縁基板の主面に、銀を含む接合材を介して設けられた銅板と、を有しており、前記銅板の中央部における前記接合材の厚みが、前記銅板の周縁部における前記接合材の厚みよりも厚くなっていることを特徴とする。   A circuit board according to an aspect of the present invention includes an insulating substrate, and a copper plate provided on a main surface of the insulating substrate via a bonding material containing silver, and the circuit board in the central portion of the copper plate. The thickness of the bonding material is greater than the thickness of the bonding material at the peripheral edge of the copper plate.

本発明の一つの態様の電子装置は、上記の回路基板と、該回路基板に搭載された電子部品とを含んでいる。   An electronic device according to one aspect of the present invention includes the above circuit board and an electronic component mounted on the circuit board.

本発明の回路基板によれば、銅板の中央部における接合材の厚みが、銅板の周縁部における接合材の厚みよりも厚くなっている。通常、回路基板では、銅板の中央部の上面に電子部品を配置することが多いため、銅板の中央部における厚みが厚い接合材では、銅よりも熱伝導率の良い銀の量が多いので、電子部品で発生した熱を絶縁基板側に良好に放熱させることができる。また、銅板の周縁部における接合材の厚みが、銅板の中央部における接合材の厚みより薄いので、周縁部において接合材の量が少なくなっており、中央部に比べて、接合材からから銅板への銀の拡散が起きにくい。よって、銅板の周縁部が硬くなり過ぎないので、使用時に熱サイクルが負荷された時に、応力が集中しやすい周縁部で応力を緩和することができる。   According to the circuit board of the present invention, the thickness of the bonding material at the central portion of the copper plate is thicker than the thickness of the bonding material at the peripheral portion of the copper plate. Usually, in a circuit board, electronic components are often arranged on the upper surface of the central portion of the copper plate, and therefore, in the bonding material having a large thickness in the central portion of the copper plate, the amount of silver having a higher thermal conductivity than copper is large. The heat generated in the electronic component can be radiated well to the insulating substrate side. Moreover, since the thickness of the bonding material at the peripheral portion of the copper plate is thinner than the thickness of the bonding material at the central portion of the copper plate, the amount of the bonding material is reduced at the peripheral portion, and from the bonding material to the copper plate from the central portion. Difficult to cause silver diffusion to Therefore, since the peripheral part of a copper plate does not become hard too much, when a thermal cycle is loaded at the time of use, stress can be relieved by the peripheral part where stress tends to concentrate.

本発明の電子装置によれば、上述の回路基板を有することから、絶縁基板のクラック発生、又は銅板の剥離を抑制することができるとともに、放熱効率を向上させることができる電子装置とすることができる。   According to the electronic device of the present invention, since the above-described circuit board is included, it is possible to suppress the occurrence of cracks in the insulating substrate or the peeling of the copper plate and to improve the heat dissipation efficiency. it can.

(a)は本発明の実施形態の回路基板および電子装置の上面図であり、(b)は(a)のA−A線での断面図であり、(c)は下面図である。(A) is a top view of the circuit board and electronic device of embodiment of this invention, (b) is sectional drawing in the AA of (a), (c) is a bottom view. (a)〜(e)は、本発明の実施形態の回路基板を製造するための各工程を説明する断面図である。(A)-(e) is sectional drawing explaining each process for manufacturing the circuit board of embodiment of this invention. 本発明の実施形態の回路基板の他の例を示す断面図である。It is sectional drawing which shows the other example of the circuit board of embodiment of this invention.

以下、図面を参照して本発明の実施形態における回路基板および電子装置について説明する。なお、図面において、回路基板および電子装置は、仮想のxyz空間内に設けられており、xy平面上に載置されている。また、本実施形態における上方、上面、上部とは仮想のz軸の正方向を示しており、下方、下面、下部とは仮想のz軸の負方向を示している。   Hereinafter, a circuit board and an electronic device according to embodiments of the present invention will be described with reference to the drawings. In the drawings, the circuit board and the electronic device are provided in a virtual xyz space and are placed on the xy plane. In the present embodiment, the upper, upper, and upper portions indicate the positive direction of the virtual z axis, and the lower, lower surface, and lower portion indicate the negative direction of the virtual z axis.

図1に示す例においては、回路基板10は、絶縁基板1と、接合材2と、銅板3とを備えている。また、図1に示す例において、電子装置20は、回路基板10と、電子部品5とを備えている。   In the example shown in FIG. 1, the circuit board 10 includes an insulating substrate 1, a bonding material 2, and a copper plate 3. In the example shown in FIG. 1, the electronic device 20 includes a circuit board 10 and an electronic component 5.

絶縁基板1は、電気絶縁材料からなり、例えば、酸化アルミニウム質セラミックス,ムライト質セラミックス,炭化ケイ素質セラミックス,窒化アルミニウム質セラミックス,または窒化ケイ素質セラミックス等のセラミックスからなる。これらセラミック材料の中では放熱性に影響する熱伝導性の点に関して、炭化ケイ素質セラミックス,窒化アルミニウム質セラミックス,または窒化ケイ素質セラミックスが好ましく、強度の点に関して、窒化ケイ素質セラミックスまたは炭化ケイ素質セラミックスが好ましい。   The insulating substrate 1 is made of an electrically insulating material, for example, ceramics such as aluminum oxide ceramics, mullite ceramics, silicon carbide ceramics, aluminum nitride ceramics, or silicon nitride ceramics. Among these ceramic materials, silicon carbide ceramics, aluminum nitride ceramics, or silicon nitride ceramics are preferred in terms of thermal conductivity that affects heat dissipation, and silicon nitride ceramics or silicon carbide ceramics in terms of strength. Is preferred.

絶縁基板1が窒化ケイ素質セラミックスのように比較的強度の高いセラミック材料からなる場合、銅板3と絶縁基板1との熱膨張率差に起因する熱応力により絶縁基板1にクラックが入る可能性が低減されるので、小型化を図りつつより大きな電流を流すことができる回路基板を実現することができる。   When the insulating substrate 1 is made of a ceramic material having a relatively high strength such as silicon nitride ceramics, there is a possibility that the insulating substrate 1 may crack due to thermal stress caused by the difference in thermal expansion coefficient between the copper plate 3 and the insulating substrate 1. Therefore, it is possible to realize a circuit board capable of flowing a larger current while achieving downsizing.

絶縁基板1の厚みは、薄い方が熱伝導性の点ではよく、例えば約0.1mm〜1mmであ
り、回路基板の大きさまたは用いる材料の熱伝導率または強度に応じて選択すればよい。
The thinner insulating substrate 1 may be in terms of thermal conductivity, for example, about 0.1 mm to 1 mm, and may be selected according to the size of the circuit board or the thermal conductivity or strength of the material used.

絶縁基板1は、例えば窒化ケイ素質セラミックスからなる場合であれば、窒化ケイ素,酸化アルミニウム,酸化マグネシウム,および酸化イットリウム等の原料粉末に適当な有機バインダー,可塑剤,および溶剤を添加混合して泥漿物に従来周知のドクターブレード法またはカレンダーロール法を採用することによってセラミックグリーンシート(セラミック生シート)を形成し、次にこのセラミックグリーンシートに適当な打ち抜き加工等を施して所定形状となすとともに、必要に応じて複数枚を積層して成形体となし、しかる後、これを窒化雰囲気等の非酸化性雰囲気にて1600〜2000℃の温度で焼成することによって製作される。   If the insulating substrate 1 is made of, for example, silicon nitride ceramics, an appropriate organic binder, plasticizer, and solvent are added to and mixed with raw material powders such as silicon nitride, aluminum oxide, magnesium oxide, and yttrium oxide, and then mixed with slurry. A ceramic green sheet (ceramic raw sheet) is formed by adopting a conventionally known doctor blade method or calendar roll method, and then a suitable punching process is applied to the ceramic green sheet to obtain a predetermined shape. If necessary, a plurality of sheets are laminated to form a molded body, and then, this is manufactured by firing at a temperature of 1600 to 2000 ° C. in a non-oxidizing atmosphere such as a nitriding atmosphere.

図1に示す例においては、銅板3が、銀を含む接合材2を介して絶縁基板1の主面に設けられている。   In the example shown in FIG. 1, a copper plate 3 is provided on the main surface of the insulating substrate 1 with a bonding material 2 containing silver.

銅板3は平板形状であり、その厚みは、例えば、20〜600μmである。銅板3は、電気
抵抗が低く高熱伝導性を有するので、回路基板10を構成する部材として好ましい。
The copper plate 3 has a flat plate shape, and the thickness thereof is, for example, 20 to 600 μm. The copper plate 3 is preferable as a member constituting the circuit board 10 because it has low electrical resistance and high thermal conductivity.

銅板3は、例えば無酸素銅である。銅板3として無酸素銅を用いた場合には、銅板3と絶縁基板1とを接合する際に、銅板3表面が銅中に存在する酸素によって酸化されることが低減されるとともに、接合材2との濡れ性が良好となるので、絶縁基板1との接合強度が向上する。   The copper plate 3 is, for example, oxygen-free copper. When oxygen-free copper is used as the copper plate 3, when the copper plate 3 and the insulating substrate 1 are joined, the surface of the copper plate 3 is reduced from being oxidized by oxygen present in the copper, and the joining material 2. Therefore, the bonding strength with the insulating substrate 1 is improved.

また、接合材2が銅成分を有する場合には、接合材2および銅板3の両部材の接合部において互いの部材中の銅成分が拡散し合うことによって拡散層が形成されるので、接合材2および銅板3が互いに強固に接合されることとなり好ましい。   Further, when the bonding material 2 has a copper component, a diffusion layer is formed by diffusing the copper component in each member at the bonding portion of both the bonding material 2 and the copper plate 3. 2 and the copper plate 3 are preferably joined firmly to each other.

また、図1(a)に示す例において、中央部の銅板3の上面には接合材4を介して電子部品5が実装されており、この電子部品5は、他の銅板3に、ボンディングワイヤ6等の導電性接続材によって接続される。このように、図1に示す例において、銅板3は、回路導体として機能している。また、銅板3は、回路基板に搭載される電子部品5のマウント用の金属部材、接地導体用の金属部材としても用いることができる。また、図1(c)に示している、絶縁基板1の下面の銅板3は、主に放熱板として用いられる。このように、銅板3は、例えば数十A程度の比較的大きな電流を通電するための導電路として、セラミックス等からなる絶縁基板1に接合されて用いられる。   Further, in the example shown in FIG. 1A, an electronic component 5 is mounted on the upper surface of the central copper plate 3 via a bonding material 4, and the electronic component 5 is bonded to another copper plate 3 with a bonding wire. It is connected by a conductive connecting material such as 6. Thus, in the example shown in FIG. 1, the copper plate 3 functions as a circuit conductor. The copper plate 3 can also be used as a metal member for mounting the electronic component 5 mounted on the circuit board and a metal member for the ground conductor. Further, the copper plate 3 on the lower surface of the insulating substrate 1 shown in FIG. 1C is mainly used as a heat sink. Thus, the copper plate 3 is used by being joined to the insulating substrate 1 made of ceramics or the like as a conductive path for supplying a relatively large current of, for example, several tens of A.

電子部品5は、例えば、トランジスタ、CPU(Central Processing Unit)用のLS
I(Large Scale Integrated circuit)、IGBT(Insulated Gate Bipolar Transistor)、またはMOS−FET(Metal Oxide Semiconductor - Field Effect Transistor)等の半導体素子である。
The electronic component 5 is, for example, a transistor or an LS for a CPU (Central Processing Unit).
It is a semiconductor element such as I (Large Scale Integrated circuit), IGBT (Insulated Gate Bipolar Transistor), or MOS-FET (Metal Oxide Semiconductor-Field Effect Transistor).

電子部品5を銅板3に接合する接合材4は、例えば、金属または導電性樹脂等からなる。金属から成る接合材は、例えば、半田、金−スズ(Au−Sn)合金、またはスズ−銀−銅(Sn−Ag−Cu)合金等である。導電性樹脂から成る接合材は、例えば、Agエポキシ樹脂等の熱伝導率の高い接着剤等である。   The bonding material 4 for bonding the electronic component 5 to the copper plate 3 is made of, for example, metal or conductive resin. The bonding material made of metal is, for example, solder, a gold-tin (Au—Sn) alloy, or a tin-silver-copper (Sn—Ag—Cu) alloy. The bonding material made of conductive resin is, for example, an adhesive with high thermal conductivity such as Ag epoxy resin.

なお、銅板3表面に、めっき法によってめっき膜を形成しても良い。この構成によれば、接合材4との濡れ性が良好となるので電子部品5を銅板3の表面に強固に接合することができる。めっき膜は、導電性および耐食性が高い金属を用いれば良く、例えば、ニッケル、コバルト、銅、若しくは金、またはこれらの金属材料を主成分とする合金材料が挙げられる。めっき膜の厚みは、例えば1.5〜10μmであれば良い。   A plating film may be formed on the surface of the copper plate 3 by a plating method. According to this configuration, since the wettability with the bonding material 4 becomes good, the electronic component 5 can be firmly bonded to the surface of the copper plate 3. The plating film may be made of a metal having high conductivity and corrosion resistance, and examples thereof include nickel, cobalt, copper, gold, and alloy materials containing these metal materials as main components. The thickness of the plating film may be, for example, 1.5 to 10 μm.

また、めっき膜は内部にリンを含有することが好ましい。例えば、ニッケル−リンのアモルファス合金のめっき膜であれば、ニッケルめっき膜の表面酸化を抑制して接合材等の濡れ性等を長く維持することができるので好ましい。また、ニッケルに対するリンの含有量が8〜15質量%程度であると、ニッケル−リンのアモルファス合金が形成されやすくなって、めっき膜に対する接合材等の接着強度を更に向上させることができる。   The plating film preferably contains phosphorus inside. For example, a nickel-phosphorus amorphous alloy plating film is preferable because surface oxidation of the nickel plating film can be suppressed and wettability of a bonding material or the like can be maintained for a long time. Further, when the content of phosphorus with respect to nickel is about 8 to 15% by mass, a nickel-phosphorus amorphous alloy is easily formed, and the adhesive strength of a bonding material or the like to the plating film can be further improved.

図1に示す例においては、銅板3は、銀を含む接合材2を介して絶縁基板1の主面に設けられている。   In the example shown in FIG. 1, the copper plate 3 is provided on the main surface of the insulating substrate 1 with a bonding material 2 containing silver.

銅板3は、絶縁基板1の上面に、例えば、Ag−Cu系の接合材2を介して接合されている。この接合材2は、絶縁基板1に対して濡れることにより強固に接合されるために、例えば、チタン、ハフニウムおよびジルコニウムのうち少なくとも1種の活性金属材料を含有している。また、この接合材2は、例えば、In、Snのうち少なくとも1つを有し
ていてもよい。なお、この接合材2の厚みは、例えば約5〜100μm程度であればよい。
The copper plate 3 is bonded to the upper surface of the insulating substrate 1 via, for example, an Ag—Cu-based bonding material 2. The bonding material 2 contains, for example, at least one active metal material of titanium, hafnium, and zirconium in order to be firmly bonded to the insulating substrate 1 when wet. Moreover, this bonding material 2 may have at least one of In and Sn, for example. In addition, the thickness of this joining material 2 should just be about 5-100 micrometers, for example.

図1に示す例のように、銅板3の中央部における接合材2の厚みが、銅板3の周縁部における接合材2の厚みよりも厚くなっている。通常、回路基板10では、銅板3の中央部の上面に電子部品5を配置することが多いため、銅板3の中央部における厚みが厚い接合材2では、銅よりも熱伝導率の良い銀の量が多いので、電子部品5で発生した熱を絶縁基板1側に良好に放熱させることができる。また、銅板3の周縁部における接合材2の厚みが、銅板3の中央部における接合材2の厚みより薄いので、周縁部において接合材2の量が少なくなっており、中央部に比べて、接合材2からから銅板3への銀の拡散が起きにくい。よって、銅板3の周縁部が硬くなり過ぎないので、使用時に熱サイクルが負荷された時に、応力が集中しやすい周縁部で応力を緩和することができる。   As in the example shown in FIG. 1, the thickness of the bonding material 2 at the center of the copper plate 3 is thicker than the thickness of the bonding material 2 at the peripheral edge of the copper plate 3. Usually, in the circuit board 10, the electronic component 5 is often disposed on the upper surface of the central portion of the copper plate 3, and therefore, the bonding material 2 having a large thickness at the central portion of the copper plate 3 is made of silver having a higher thermal conductivity than copper. Since the amount is large, the heat generated in the electronic component 5 can be radiated well to the insulating substrate 1 side. Moreover, since the thickness of the bonding material 2 at the peripheral portion of the copper plate 3 is thinner than the thickness of the bonding material 2 at the central portion of the copper plate 3, the amount of the bonding material 2 is reduced at the peripheral portion, compared to the central portion, Silver diffusion from the bonding material 2 to the copper plate 3 hardly occurs. Therefore, since the peripheral part of the copper plate 3 does not become too hard, the stress can be relieved at the peripheral part where the stress tends to concentrate when a thermal cycle is applied during use.

次に、図2を用いて、本発明の図1に示す例の実施形態に係る回路基板10の製造方法について説明する。   Next, a manufacturing method of the circuit board 10 according to the embodiment of the example shown in FIG. 1 of the present invention will be described with reference to FIG.

(1)まず、第1工程として、図2(a)に示すように、銅板3となる銅板母材3´の主面を絶縁基板1の主面上に配置する。なお、本工程においては、銅板母材の配置前に、絶縁基板1の両主面に接合材2を予め所定の位置に例えばスクリーン印刷等の方法で所定の形状に塗布する。この接合材2は、例えば、銀、銅を主成分とし、さらにTiを含み、In、又はSnによって融点を790℃程度に調整したものが用いられる。なお、接合材2の印刷塗布にあたっては、図2(a)に示すように、銅板3の形成領域のみに接合材2を印刷するようにする。   (1) First, as a first step, as shown in FIG. 2A, the main surface of a copper plate base material 3 ′ to be the copper plate 3 is disposed on the main surface of the insulating substrate 1. In this step, before the copper plate base material is arranged, the bonding material 2 is applied in advance to a predetermined position on both main surfaces of the insulating substrate 1 in a predetermined shape by a method such as screen printing. As this bonding material 2, for example, a material containing silver and copper as main components, further containing Ti, and having a melting point adjusted to about 790 ° C. with In or Sn is used. In the printing application of the bonding material 2, the bonding material 2 is printed only in the formation region of the copper plate 3 as shown in FIG.

(2)次に、第2工程として、銅板3の中央部における接合材2の厚みが、銅板3の周縁部における接合材2の厚みよりも厚くなるよう、接合材2の厚みを調整する。   (2) Next, as a second step, the thickness of the bonding material 2 is adjusted so that the thickness of the bonding material 2 at the center of the copper plate 3 is larger than the thickness of the bonding material 2 at the peripheral edge of the copper plate 3.

具体的には、図2(b)に示すように、後述する工程においてエッチングにより除去される銅板非形成領域に沿って壁部が形成された枠体治具11を、銅板母材3´の上面または下面から絶縁基板1側に押し付ける。これにより、図2(c)に示すように、壁部で押さえられた銅板非形成領域の近傍では、銅板母材3´が変形し、接合材2の厚みが小さくなる。一方、壁部で押さえられなかった銅板形成領域の中央部では、銅板母材3´が変形しないので、接合材2の厚みが比較的大きくなる。   Specifically, as shown in FIG. 2 (b), a frame jig 11 having a wall portion formed along a copper plate non-formation region that is removed by etching in a process described later is connected to a copper plate base material 3 '. Press against the insulating substrate 1 from the upper or lower surface. Thereby, as shown in FIG.2 (c), the copper plate base material 3 'deform | transforms in the vicinity of the copper plate non-formation area | region pressed by the wall part, and the thickness of the joining material 2 becomes small. On the other hand, since the copper plate base material 3 ′ is not deformed in the central portion of the copper plate forming region that is not pressed by the wall portion, the thickness of the bonding material 2 becomes relatively large.

本工程により、銅板形成領域の中央部における接合材2の厚みが、銅板形成領域の周縁部における接合材2の厚みよりも厚くなる。   By this step, the thickness of the bonding material 2 at the center portion of the copper plate forming region becomes thicker than the thickness of the bonding material 2 at the peripheral portion of the copper plate forming region.

なお、接合材2中に高融点の金属粒子を含有させておくことにより、枠体治具11で銅板母材3´を押さえ付けた場合に、壁部で抑えられていない銅板形成領域の中央部において、接合材の流動が起こりにくく、接合材2の厚みを周縁部より厚くしやすい。   In addition, when the high melting point metal particles are contained in the bonding material 2, when the copper plate base material 3 ′ is pressed by the frame jig 11, the center of the copper plate formation region that is not suppressed by the wall portion. In the portion, the bonding material hardly flows, and the thickness of the bonding material 2 is easily made thicker than the peripheral portion.

(3)次に、第3工程として、加熱処理によって、銅板母材3´を絶縁基板1に接合させる。この工程では、第2工程で得られた積層体を、真空炉内に載置し、真空状態において830℃程度で熱処理を行う。これにより、接合材2が溶融し、冷却することで接合材2が固化し、銅板母材3´が絶縁基板1に接合される。   (3) Next, as a third step, the copper plate base material 3 ′ is bonded to the insulating substrate 1 by heat treatment. In this step, the laminated body obtained in the second step is placed in a vacuum furnace, and heat treatment is performed at about 830 ° C. in a vacuum state. As a result, the bonding material 2 is melted and cooled to solidify the bonding material 2, and the copper plate base material 3 ′ is bonded to the insulating substrate 1.

(4)次に、第4工程として、エッチング処理によって、銅板母材3´における銅板非形成領域を除去し、銅板3を残すようにする。   (4) Next, as a fourth step, the copper plate non-formation region in the copper plate base material 3 ′ is removed by etching, and the copper plate 3 is left.

具体的には、図2(d)に示すように、銅板3として残したい銅板形成領域にレジスト13を形成し、図1(a)に示す例のような複数の銅板3が残るようエッチングを行う。
なお、エッチング液としては、例えば、塩化第二鉄を使用すればよい。なお、エッチングを行った後、レジスト13を除去するようにする。以上の工程によって、図2(e)に示すように、回路基板10を得ることができる。
Specifically, as shown in FIG. 2 (d), a resist 13 is formed in the copper plate formation region to be left as the copper plate 3, and etching is performed so that a plurality of copper plates 3 as in the example shown in FIG. 1 (a) remain. Do.
For example, ferric chloride may be used as the etching solution. Note that the resist 13 is removed after the etching. Through the above steps, the circuit board 10 can be obtained as shown in FIG.

次に、図3を用いて、本発明の他の実施形態の例を説明する。図3は、本発明の実施形態の回路基板の他の例を示す断面図である。   Next, an example of another embodiment of the present invention will be described with reference to FIG. FIG. 3 is a cross-sectional view showing another example of the circuit board according to the embodiment of the present invention.

図3に示す例において、絶縁基板1の下面においては、銅板3の中央部における接合材2の厚みが、銅板3の周縁部における接合材2の厚みよりも厚くなっており、かつ、銅板3は下側に凸となるよう湾曲している。この構成により、この回路基板10を、外部の放熱基体等に接合する際に、絶縁基板1の下面における銅板3の中央部が放熱基体等に確実に接して接合される。よって、電子部品5で発生した熱を、回路基板10から外部の放熱基体へと効率的に放熱することができる。   In the example shown in FIG. 3, the thickness of the bonding material 2 at the center of the copper plate 3 is thicker than the thickness of the bonding material 2 at the peripheral portion of the copper plate 3 on the lower surface of the insulating substrate 1. Is curved to be convex downward. With this configuration, when the circuit board 10 is bonded to an external heat dissipation base or the like, the central portion of the copper plate 3 on the lower surface of the insulating substrate 1 is securely in contact with the heat dissipation base or the like. Therefore, the heat generated in the electronic component 5 can be efficiently radiated from the circuit board 10 to the external heat radiating base.

図3に示す例の回路基板を製造するには、予め、銅板形成領域が凸状に湾曲している銅板母材3´を準備し、その後、銅板母材3´を絶縁基板1に接合させるようにする。なお、銅板母材3´における銅板形成領域を湾曲させるためには、銅板母材3´に予めプレス成型を施せばよい。   In order to manufacture the circuit board of the example shown in FIG. 3, a copper plate base material 3 ′ whose copper plate formation region is curved in a convex shape is prepared in advance, and then the copper plate base material 3 ′ is joined to the insulating substrate 1. Like that. In order to curve the copper plate forming region in the copper plate base material 3 ′, the copper plate base material 3 ′ may be press-molded in advance.

なお、本発明の銅板等は上記実施の形態の例に限定されるものではなく、本発明の要旨の範囲内であれば種々の変更は可能である。   In addition, the copper plate of this invention is not limited to the example of the said embodiment, A various change is possible if it is in the range of the summary of this invention.

1・・・絶縁基板
2・・・接合材
3・・・銅板
3´・・銅板母材
4・・・接合材
5・・・電子部品
6・・・ボンディングワイヤ
10・・・回路基板
11・・・枠体治具
20・・・電子装置
DESCRIPTION OF SYMBOLS 1 ... Insulating substrate 2 ... Bonding material 3 ... Copper plate 3 '... Copper plate base material 4 ... Bonding material 5 ... Electronic component 6 ... Bonding wire
10 ... Circuit board
11 ... Frame jig
20 ... Electronic device

Claims (2)

絶縁基板と、
該絶縁基板の主面に、銀を含む接合材を介して設けられた銅板と、を有しており、
前記銅板の中央部における前記接合材の厚みが、前記銅板の周縁部における前記接合材の厚みよりも厚くなっている
ことを特徴とする回路基板。
An insulating substrate;
A copper plate provided on a main surface of the insulating substrate via a bonding material containing silver;
The circuit board, wherein a thickness of the bonding material in a central portion of the copper plate is thicker than a thickness of the bonding material in a peripheral portion of the copper plate.
請求項1に記載の回路基板と、
該回路基板に搭載された電子部品とを含んでいる
電子装置。
A circuit board according to claim 1;
And an electronic component mounted on the circuit board.
JP2014153949A 2014-07-29 2014-07-29 Circuit board and electronic device Pending JP2016032032A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2014153949A JP2016032032A (en) 2014-07-29 2014-07-29 Circuit board and electronic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014153949A JP2016032032A (en) 2014-07-29 2014-07-29 Circuit board and electronic device

Publications (1)

Publication Number Publication Date
JP2016032032A true JP2016032032A (en) 2016-03-07

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014153949A Pending JP2016032032A (en) 2014-07-29 2014-07-29 Circuit board and electronic device

Country Status (1)

Country Link
JP (1) JP2016032032A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023286856A1 (en) * 2021-07-16 2023-01-19 三菱マテリアル株式会社 Copper/ceramic bonded body and insulated circuit board

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023286856A1 (en) * 2021-07-16 2023-01-19 三菱マテリアル株式会社 Copper/ceramic bonded body and insulated circuit board
JP2023013629A (en) * 2021-07-16 2023-01-26 三菱マテリアル株式会社 Copper/Ceramic Bonded Body and Insulated Circuit Board
JP7739805B2 (en) 2021-07-16 2025-09-17 三菱マテリアル株式会社 Copper/ceramic bonded body and insulated circuit board

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