JP2016028370A - Solid state lighting device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a solid lighting system for actualizing easy heat release and easy color chromaticity adjustment.SOLUTION: The solid lighting system includes a light source part having a semiconductor light emitting element for emitting exciting light, a light guide part, a wavelength conversion layer, and irradiation region moving means. The light guide part has an incident portion into which the exciting light is introduced, and an irradiation portion from which the exciting light is emitted. The wavelength conversion layer has a first region for absorbing the exciting light and emitting first wavelength conversion light having a wavelength greater than the wavelength of the exciting light, and a second region for absorbing the exciting light and emitting second wavelength conversion light having a wavelength greater than the wavelength of the exciting light. The first wavelength conversion light and the second wavelength conversion light are different in emission spectrum. The ratio of the light output of the first wavelength conversion light to the light output of the exciting light emitted via the first region is different from the ratio of the light output of the second wavelength conversion light to the light output of the exciting light emitted via the second region. The irradiation region moving means changes a position on the surface of the wavelength conversion layer to be irradiated with the exciting light emitted from the irradiation portion.SELECTED DRAWING: Figure 1

Description

  Embodiments described herein relate generally to a solid-state lighting device.

  The LED (Light Emitting Diode) is the mainstream of white solid state lighting (SSL) devices using solid light emitting elements.

  In this case, if a white light emitting unit having a phosphor is provided to cover an LED (Light Emitting Diode) chip, a substrate for heat dissipation and power supply of the LED chip is required. If the white light emitting unit is composed only of an optical system, heat generation is small, the size and weight are reduced, and the design flexibility of the lighting device can be increased.

  For this purpose, for example, the output from a high-intensity solid-state light emitting device in the blue-violet to blue wavelength range is efficiently coupled to a light guide or the like, and irradiated to a wavelength conversion layer such as a phosphor separated from the solid light-emitting device. A structure that obtains white light emission may be used.

  In order to adjust the color temperature of the emission color, the emission intensity ratio of a plurality of white LEDs having different color temperatures may be changed. However, it is necessary to increase the number of white LEDs. In addition, when trying to obtain a desired color temperature by mixing LEDs of RGB colors, the power consumption increases because the light emission efficiency is lower than that of the white LED.

Special table 2011-501364 gazette

  Provided is a solid-state lighting device that can easily dissipate heat and easily adjust chromaticity.

  The solid-state lighting device of the embodiment includes a semiconductor light emitting element, a light source unit that emits excitation light, an incident unit that introduces the excitation light, and an irradiation unit that emits the excitation light introduced into the incident unit A first wavelength having a wavelength that is longer than the wavelength of the excitation light by absorbing the excitation light. A first region that emits converted light; and a second region that absorbs the excitation light and emits second wavelength converted light having a wavelength longer than the wavelength of the excitation light, and the first wavelength converted light. And the second wavelength converted light have different emission spectra, or the ratio of the optical output of the first wavelength converted light to the optical output of the excitation light emitted through the first region and the second region The second wavelength with respect to the optical output of the excitation light emitted through The ratio of the light output of 換光 differ comprises a wavelength conversion layer, and a irradiation area moving means for changing an irradiation position on the surface of the wavelength conversion layer of the excitation light emitted from the irradiation unit.

  A solid-state lighting device that can easily dissipate heat and easily adjust chromaticity is provided.

FIG. 1A is a schematic perspective view of the solid-state lighting device according to the first embodiment, and FIG. 1B is a schematic cross-sectional view taken along the line AA. 2A is a schematic plan view showing the structure of the wavelength conversion layer, FIG. 2B is a schematic cross-sectional view along the line BB, and FIG. 2C is a schematic view showing a modification of the wavelength conversion layer. FIG. 2D is a schematic cross-sectional view along the line BB. FIG. 3A is a schematic plan view of the first irradiation position of the second embodiment, FIG. 3B is a schematic cross-sectional view along the line CC, and FIG. 3C is the second irradiation position. 3D is a schematic sectional view taken along the line CC, FIG. 3E is a schematic plan view of the third irradiation position, and FIG. 3F is a line taken along the line CC. It is the model sectional drawing. FIG. 4A is a schematic perspective view of the solid state lighting device according to the third embodiment, and FIG. 4B is a schematic cross-sectional view taken along the line CC. 5A is a conical irradiation unit, FIG. 5B is a quadrangular pyramid irradiation unit, FIG. 5C is a triangular pyramid irradiation unit, FIG. 5D is an end polishing fiber irradiation unit, and FIG. e) is an irradiation part of the fiber array, and FIG. 6F is a schematic perspective view of the irradiation part of the multilayer fiber array. FIG. 6A is a schematic perspective view of a light emitting unit, and FIG. 6B is a schematic perspective view of a spotlight which is an application example thereof. FIG. 7A is a schematic perspective view of a solid-state lighting device according to the fourth embodiment, and FIG. 7B is a schematic cross-sectional view taken along the line DD. FIG. 8A is a schematic perspective view of a solid-state lighting device according to the fifth embodiment, and FIG. 8B is a schematic cross-sectional view taken along the line DD. FIG. 9A is a partially cut schematic perspective view of a solid state lighting device according to the sixth embodiment, and FIG. 9B is a partially cut schematic cross-sectional view. FIG. 10A is a partially cut schematic perspective view of the solid state lighting device according to the seventh embodiment, FIG. 10B is a partially cut schematic cross sectional view, and FIG. 10C is a schematic cross sectional view of a modification. . FIG. 11A is a schematic perspective view of a light conversion unit constituting the solid-state lighting device according to the eighth embodiment, FIG. 11B is a schematic view showing the configuration of the solid-state lighting device, and FIG. It is a model perspective view of a light body. 12A is a schematic cross-sectional view of the light conversion unit of the solid state lighting device of the eighth embodiment, FIG. 12B is a schematic cross-sectional view in the vicinity of the transparent tube, and FIG. 12C is a schematic perspective view of the application example. Figure.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
FIG. 1A is a schematic perspective view of the solid-state lighting device according to the first embodiment, and FIG. 1B is a schematic cross-sectional view taken along the line AA.
The solid-state lighting device includes the light source unit 10, the wavelength conversion layer 54, the light guide unit 20, and the irradiation region moving unit 24.

  The light source unit 10 emits excitation light G1, and has at least a semiconductor light emitting element or the like as a means for generating the excitation light G1. The semiconductor light emitting element can be, for example, a laser element or a light emitting diode that emits excitation light (light beam) G1 having a wavelength range of 400 to 490 nm. The wavelength range of the excitation light G <b> 1 only needs to be absorbed by the wavelength conversion layer 54 described later and emit wavelength conversion light, and can be set to ultraviolet light with a wavelength of 400 nm or less, or with a wavelength of 500 nm or more, in combination with the wavelength conversion layer 54.

  The light source unit 10 may be configured to directly irradiate light from the semiconductor light emitting element as excitation light, or may be configured to indirectly irradiate via an optical fiber, an optical lens, a reflecting member, or the like. Further, a configuration in which a plurality of semiconductor light emitting elements are provided to increase the output of the excitation light G1 from the light source unit 10 may be used. Moreover, when the light guide part 20 mentioned later consists of two or more light guides, the structure which branches the excitation light G1 from a semiconductor light-emitting element to a plurality of light guides, and guides the excitation light G1 may be sufficient. If the semiconductor light emitting element is a laser element, the beam divergence angle can be narrowed, so that the excitation light can be efficiently introduced into the incident part 20a of the light guide part 20 and efficiently guided to the irradiation part 20b.

  The light guide unit 20 guides the excitation light G1 from the light source unit 10 to a wavelength conversion layer 54 described later, and is configured by, for example, an optical fiber or a light guide. The light guide unit 20 includes an incident unit 20a on which one end is incident with excitation light, and an irradiation unit 20b on which the other end irradiates the excitation light G1 toward the wavelength conversion layer. The irradiation unit 20b has, for example, a shape obtained by processing the tip of an optical fiber or a light guide into a taper shape, and controls the reflection direction of the excitation light G1 guided through the light guide unit 20 so as to be in an arbitrary irradiation direction. Excitation light G1 is irradiated. In the configuration of FIG. 1B, there are four irradiation areas using an optical fiber array described later. The two irradiation regions irradiate the excitation light in the first direction, and the remaining two irradiation regions irradiate the excitation light in a second direction 180 degrees different from the first direction. The light guide unit 20 may be a spatial propagation optical path configured by a mirror, a lens, or the like.

The wavelength conversion layer 54 absorbs the excitation light G1 and emits wavelength conversion light having an emission spectrum including a wavelength longer than the wavelength of the excitation light G1. The wavelength conversion layer 54 is made of, for example, a nitride-based phosphor such as (Ca, Sr) ₂ Si ₅ N ₈ : Eu, (Ca, Sr) AlSiN ₃ : Eu, or Cax (Si, Al) ₁₂ (O, N ) ₁₆ : Eu, (Si, Al) ₆ (O, N) ₈ : Eu, BaSi ₂ O ₂ N ₂ : Eu, BaSi ₂ O ₂ N ₂ : Eu and other oxynitride phosphors, Lu ₃ Al ₅ O ₁₂ : Ce, (Y, Gd) ₃ (Al, Ga) ₅ O ₁₂ : Ce, (Sr, Ba) ₂ SiO ₄ : Eu, Ca ₃ Sc ₂ Si ₃ O ₁₂ : Ce, Sr ₄ Al ₁₄ O ₂₅ : Eu or other oxide-based phosphors, (Ca, Sr) S: Eu, CaGa ₂ S ₄ : Eu, ZnS: Cu, Al or other sulfide-based phosphors, etc., or at least one kind A phosphor mixed as described above can be used.

  The wavelength conversion layer 54 has at least two regions that emit at least two wavelength-converted lights having different emission spectra of the wavelength-converted light, for example. In FIG. 1, the wavelength conversion layer 54 includes a first region 54a, a second region 54b, a third region 54c, a fourth region 54d, a fifth region 54e, and a sixth region 54f.

  The incident portion 20a of the light guide portion 20 is provided outside the region surrounded by the wavelength conversion layers 54a to 54f. Moreover, the irradiation part 20b is provided so that it may be enclosed by the wavelength conversion layers 54a-54f, and discharge | releases the excitation light G1 from the light source part 10 light-guided. The irradiation region moving means 22 moves the position of the irradiation region of the excitation light G1 emitted from the irradiation unit 20b toward the wavelength conversion layer 54. Thus, above the wavelength conversion layer 54, the wavelength conversion light from the wavelength conversion layer 54 in the region irradiated with the excitation light G1 and a part of the excitation light G1 reflected by the wavelength conversion layer 54 are mixed. The emitted light GT thus obtained can be obtained.

  For example, it is assumed that the first region 54a and the fourth region 54d on the opposite side emit wavelength-converted light having a first emission spectrum that is substantially the same. In addition, the second region 54b and the fifth region 54e on the opposite side emit wavelength converted light having a second emission spectrum different from the first emission spectrum. Furthermore, it is assumed that the third region 54c and the sixth region 54f on the opposite side emit wavelength converted light having a third emission spectrum different from the first and second emission spectra.

  The light guide unit 20 is rotated with the axial direction of the light guide unit 20 as the central axis 30c, and the irradiation position of the excitation light G1 from the irradiation unit 20b is set to the position of the first region 54a and the fourth region 54d, or the first The chromaticity of the emitted light GT can be changed by switching the position between the second region 54b and the fourth region 54e or the position between the third region 54c and the sixth region 54e.

  For example, blue-violet to blue laser light is used as the excitation light G1 of the light source unit 10, the first emission spectrum is a blue wavelength conversion layer, the second emission spectrum is a green wavelength conversion layer, and a third wavelength conversion layer. By selecting the wavelength conversion layer whose red light emission spectrum is red, the color can be changed to blue, green, and red. Also, by providing a scattering layer that reflects / reflects blue-violet to blue laser light instead of the blue wavelength conversion layer, blue light can be generated by the scattering layer, so that a variable color can be obtained.

  As another modification example regarding the arrangement of the wavelength conversion layer, a configuration in which a wavelength conversion layer in which a plurality of phosphors having different emission colors are mixed is used and the mixture ratio is changed and arranged in each region may be used. For example, a blue-violet to blue laser beam is used as the excitation light G1 of the light source unit 10, and the wavelength conversion layer and the second light emission whose first emission spectrum is adjusted to the blending ratio at which the first color temperature is obtained. By selecting the wavelength conversion layer whose spectrum is adjusted to the mixing ratio of the second color temperature and the wavelength conversion layer whose third emission spectrum is adjusted to the mixing ratio of the third color temperature, the emitted light GT is selected. The color temperature can be varied.

  Further, for example, the first region 54a may include a red wavelength conversion layer, and the fourth region 54d on the opposite side thereof may include a green wavelength conversion layer. When the position of the irradiation region is moved to 60 degrees and 120 degrees, respectively, red and green wavelength converted lights having different emission spectra are emitted, and chromaticity and color temperature can be adjusted. Similarly, light bulb colors and white light having different color temperatures can be obtained.

  The ratio of the light output of the wavelength converted light to the light output of the excitation light G1 reflected from the wavelength conversion layer 54 without being absorbed by the wavelength conversion layer 54 in the excitation light G1 irradiated to the wavelength conversion layer 54. Variable colors are possible by changing the color.

  For example, blue-violet to blue laser light is used as the excitation light G1 of the light source unit 10, and a yellow phosphor having the same spectrum is applied to each of the regions 54a to 54f as the wavelength conversion layer 54. It can be set as the structure arrange | positioned so that a film thickness may differ. In the region where the wavelength conversion layer 54 is thickly applied, the absorption of excitation light can be increased, and yellow wavelength conversion light can be increased. As a result, since the excitation light that is not absorbed by the wavelength conversion layer 54 decreases, the light output of the blue excitation light reflected by the wavelength conversion layer 54 decreases. As a result, the emitted light GT can be a light emission color in which yellow light emission is dominant.

  On the other hand, in the region where the film thickness of the wavelength conversion layer 54 is thinly applied, the absorption of the excitation light becomes small and the yellow wavelength conversion light decreases. As a result, since the excitation light that is not absorbed by the wavelength conversion layer 54 increases, the light output of the blue excitation light reflected by the wavelength conversion layer 54 increases. As a result, the emitted light GT can be a light emission color in which blue is dominant as compared with a region where the film thickness is thick. In this way, for example, emitted light with different colors can be obtained. The first region to the sixth region of the wavelength conversion layer 54 can be divided, for example, by 60 degrees in plan view. Note that the number of divisions is not limited to six.

  The solid-state lighting device can further include a heat conducting unit 30 having a high heat conducting material such as metal or ceramic. The heat conducting unit 30 has a recess 30b that is recessed from the first surface 30a. The recess 30b has an inner wall 30d that is provided around the central axis 30c and widens toward the first surface 30a. The wavelength conversion layer 54 is provided such that the plurality of regions (54a, 54b, etc.) are juxtaposed at different positions along the circumferential direction of the central axis 30c.

  Excitation light can irradiate different regions of the wavelength conversion layer 54 by rotating at least one of the heat conducting unit 30 and the irradiation unit 20b.

  Moreover, the cover part 57 can be provided in the upper part of the recessed part 30b. The cover part 57 can include a light diffusion layer. When the cover portion 57 includes a light diffusion layer, the excitation light that is multiply reflected without being absorbed by the wavelength conversion layer provided on the inner wall 30d of the recess 30b can be scattered and emitted. In the case where the excitation light is laser light, the laser light can be converted into incoherent light to improve safety for human eyes. Note that FIG. 1A does not illustrate the cover portion 57.

  Further, the cover 57 part may include a wavelength conversion layer. For example, it is assumed that the cover portion 57 includes a green wavelength conversion layer, and a red wavelength conversion layer and a green wavelength conversion layer are provided on the inner wall 30d of the recess 30b. The green wavelength conversion layer of the cover part 57 transmits red light having a wavelength longer than that of green light with little absorption. When absorption of excitation light decreases due to an increase in the temperature of the wavelength conversion layer, the blue component of reflected light increases, and the emitted light GT becomes bluish. In this case, the emission spectrum can be changed by moving the excitation light irradiation region to reduce the blue component and bring it closer to the desired color temperature. Further, by providing the cover portion 57, the heat generation region of the wavelength conversion layer can be dispersed.

  The irradiation region moving unit 24 is a unit that changes the relative position between the irradiation unit 20b and the wavelength conversion layer 54, has a motor, a gear, and the like, and is an automatic moving unit that moves mechanically by an electromagnetic method or an electronic method, Or. These can be simplified, and it can be set as the manual movement apparatus etc. which are moved manually by the operator.

2A is a schematic plan view showing the structure of the wavelength conversion layer, FIG. 2B is a schematic sectional view taken along line BB in FIG. 2A, and FIG. 2C is the wavelength conversion layer. FIG. 2D is a schematic cross-sectional view taken along the line BB of FIG. 2C.
2A and 2B, the wavelength conversion layer 54 can be applied to one surface of a holding plate 50 that holds or fixes the wavelength conversion layer 54. The holding plate 50 can be an insulating plate such as ceramics such as YAG or alumina. As the ceramics, transparent ceramics that transmit excitation light and light from the wavelength conversion layer 54, reflective ceramics that reflect these lights, and the like can be used. The holding plate 50 can also be a metal plate such as aluminum or copper in order to improve heat dissipation. The thickness of the holding plate 50 is, for example, 0.05 to 3.0 mm, and is set according to heat dissipation and light utilization efficiency. In this case, a wavelength conversion material such as phosphor particles can be applied by being mixed in an amorphous silica mixed solution, for example. The reflective layer 52 containing Ag or the like can be provided on the other surface of the holding plate 50 using a sputtering method, a vapor deposition method, or the like.

  Alternatively, as shown in FIGS. 2C and 2D, the reflective layer 52 and the wavelength conversion layer 54 can be provided on one surface of the holding plate 50 in this order. In this way, the wavelength conversion layer 54 and the reflection layer 52 can be reliably and easily bonded to the inner wall 30d of the heat conducting unit 30. For this reason, it can be set as the reflection type structure which improved heat dissipation. Moreover, you may join between the reflection layer 52 and the heat conductive part 30 through the adhesive layer (not shown) with good heat dissipation, such as silicone. Further, the reflective layer 52 may be configured to use both the reflective layer 52 and the adhesive layer by using, for example, solder.

  FIG. 3A is a schematic plan view of the first irradiation position of the second embodiment, FIG. 3B is a schematic cross-sectional view along the line CC, and FIG. 3C is the second irradiation position. 3D is a schematic sectional view taken along the line CC, FIG. 3E is a schematic plan view of the third irradiation position, and FIG. 3F is a line taken along the line CC. It is the model sectional drawing.

  In the second embodiment, the irradiation region moving means 24 moves the irradiation unit 20b to a different position along the central axis 30c of the recess 30b. That is, FIGS. 3A and 3B show the first irradiation position that is the farthest from the first surface. 3C and 3D show the second irradiation position closer to the first surface than the first irradiation position. FIGS. 3E and 3F show the third irradiation position closest to the first surface. The wavelength conversion layer 54 has an emission spectrum of the wavelength conversion light or a ratio of the optical output of the wavelength conversion light to the optical output of the excitation light emitted through the wavelength conversion layer 54 at different positions along the direction of the central axis 30c. A region where at least one of them is different is provided. The excitation light emitted through the wavelength conversion layer 54 refers to the excitation light that is not absorbed by the wavelength conversion layer 54 and is reflected or scattered by the wavelength conversion layer 54 among the excitation light irradiated to the wavelength conversion layer 54. means. The boundary between different regions of the wavelength conversion layer 54 may change continuously. For this reason, it is possible to change the chromaticity and the color temperature of the emitted light GT in which the wavelength converted light and the excitation light emitted through the wavelength converting layer 54 are mixed.

  Further, the position of the heat conducting unit 30 may be moved along the central axis 30c by the irradiation region moving means 24. The irradiation area moving means 24 has, for example, a motor, a gear, etc., and an automatic moving means device that moves mechanically by an electromagnetic method or an electronic method, or these are simplified and moved manually by an operator. It can be a manual moving device.

FIG. 4A is a schematic perspective view of the solid state lighting device according to the third embodiment, and FIG. 4B is a schematic cross-sectional view taken along the line CC.
The light guide 20 may be a spatial propagation optical path. In this figure, the excitation light G1 emitted from the semiconductor light emitting element is, for example, laser light, propagates through the space, is bent by the mirror 23, further propagates through the space, and is then emitted from the irradiation unit 20b. The irradiation region moving means 24 can move the position of the irradiation region on the wavelength conversion layer 54 when at least one of the irradiation unit 20b and the heat conducting unit 30 is rotated around the central axis 30c. In addition, a light guide or a light diffusing layer may be provided in any region in the optical path so that the excitation light can be scattered light. Note that at least one of the irradiation unit 20b and the heat conduction unit 30 can be moved relatively along the central axis 30c to change the irradiation position.

5A is a conical irradiation unit, FIG. 5B is a quadrangular pyramid irradiation unit, FIG. 5C is a triangular pyramid irradiation unit, FIG. 5D is an end polishing fiber irradiation unit, and FIG. FIG. 6E is a schematic perspective view of the irradiation section of the fiber array and FIG. 6F is an irradiation section of the multilayer fiber array.
The irradiation part 20b can be obtained by processing the tip part of the light guide part 20 into a desired shape. The tip shape is a cone in FIG. 5A, a quadrangular pyramid in FIG. 5B, a triangular pyramid in FIG. For example, the excitation light G1 guided inside the light guide 20 can be totally reflected by the inclined surface of the tip, and the wavelength conversion layer 54 can be efficiently irradiated.

  In FIG. 5D, an end face obtained by obliquely polishing the tip of the optical fiber 21 is referred to as an irradiation part 20b. The inclination angle of the end face can be set to, for example, 45 degrees so that the surface of the wavelength conversion layer 54 is efficiently irradiated. As shown in FIGS. 5 (e) and 5 (f), when the irradiation section 20b is formed by obliquely polishing the tip of the fiber array, the output of the excitation light can be increased and a large light quantity illumination device can be obtained.

  The fiber array is composed of, for example, a substrate, a cover, an adhesive member, and a plurality of optical fibers. The number of V-grooves corresponding to the number of optical fibers is formed on one surface of the substrate. The cover is provided so as to cover the optical fibers arranged one by one in each V-groove formed in the substrate. The adhesive member is a solidified liquid adhesive and is provided between the substrate and the cover to fix the optical fiber. The material of the substrate and cover is a transparent member such as quartz glass, borosilicate glass, or sapphire. As the adhesive member, for example, an inorganic binder or a silicone resin that can withstand the high output of the semiconductor laser can be used. In this figure, a fiber array is shown in which an optical fiber is sandwiched and fixed between a substrate and a cover. However, a configuration in which the exit end of the optical fiber is fused and connected to the incident side surface of the substrate can also be used.

FIG. 6A is a schematic perspective view of a light emitting unit, and FIG. 6B is a schematic perspective view of a spotlight which is an application example thereof.
The spotlight can be used for stage lighting, for example. In this case, the chromaticity and color temperature of the illumination light change variously depending on requirements. As shown in FIG. 6A, in the first to third solid-state lighting devices, it is possible to meet these requirements by exchanging only the light emitting unit 35 including the wavelength conversion layer 54 and the heat conducting unit 30. It becomes easy.

FIG. 7A is a schematic perspective view of a solid-state lighting device according to the fourth embodiment, and FIG. 7B is a schematic cross-sectional view taken along the line DD.
The fourth embodiment is a transmissive solid-state lighting device that emits emitted light GT from the outer edge of the transparent tube 60 toward the outside. The solid state lighting device includes the light source unit 10, the transparent tube 60, the wavelength conversion layer 54, the irradiation unit 20 b, and the irradiation region moving unit 24.

  The light source unit 10 emits excitation light G1, and has at least a semiconductor light emitting element or the like as a means for generating the excitation light G1. The semiconductor light emitting device may be a laser device or a light emitting diode that emits excitation light G1 in the blue-violet to blue wavelength range.

  The wavelength conversion layer 54 is provided on the inner wall 60a of the transparent tube 60, absorbs the excitation light G1, and emits wavelength conversion light having a longer wavelength than the wavelength of the excitation light G1. The wavelength conversion layer 54 has at least two regions in which at least one of the emission spectrum or the ratio of the light output of the wavelength converted light to the light output of the excitation light emitted through the wavelength conversion layer 54 is different. The excitation light emitted through the wavelength conversion layer 54 is excitation that is not absorbed by the wavelength conversion layer 54 but transmitted or scattered by the wavelength conversion layer 54 in the excitation mechanism irradiated to the wavelength conversion layer 54. Means light. In FIG. 7, the wavelength conversion layer 54 is provided with a first region 54 a and a second region 54 b at different positions along the central axis 60 c of the transparent tube 60.

  The irradiation unit 20b is provided in the internal space of the transparent tube 60 so as to be surrounded by the wavelength conversion layer 54, and emits the emitted light GT from the outer wall 60b in the radial direction of the transparent tube 60. The irradiation region moving means 24 moves the position of the irradiation region of the excitation light emitted from the irradiation unit 20b toward the wavelength conversion layer 54. The irradiation unit 20b moves in a direction parallel to the central axis 60c, so that the excitation light irradiates different regions of the wavelength conversion layer 54. Alternatively, even if the transparent tube 60 is moved, the irradiation position on the wavelength conversion layer 54 can be moved, but the structure is easier if the irradiation unit 20b is moved.

  The transparent tube 60 may have an outer diameter of 9 mm, an inner diameter of 4.5 mm, and a material made of YAG ceramics, alumina ceramics, quartz glass, or the like.

  The wavelength conversion layer 54 may be a mixture of a plurality of wavelength conversion materials. For example, the first region 54a may be blended with a wavelength conversion material made of a phosphor or the like so that the color temperature of the wavelength converted light is 5000K. Moreover, the 2nd area | region 54b may be mix | blended so that the color temperature of wavelength conversion light may be 3000K.

  When the position of the irradiation unit 20b is moved by the irradiation region moving unit 24, the color temperature of the mixed emission light can be changed in the range of 3000 to 5000K. Note that it is more preferable to dispose the first region 54a and the second region 54b close to each other because the movement distance can be shortened.

FIG. 8A is a schematic perspective view of a transmissive solid-state lighting device according to the fifth embodiment, and FIG. 8B is a schematic cross-sectional view taken along the line DD.
In the fifth embodiment, two irradiation units 20b and 20c are provided, and excitation light is emitted from each.

  The first region 54a includes, for example, a green wavelength conversion layer. The second region 54b includes a red wavelength conversion layer. The irradiation unit 20a mainly irradiates the first region 54a. The irradiation unit 20b mainly irradiates the second region 54b. The dose for the first region 54a and the dose for the second region can be determined independently. For this reason, the color temperature of the emitted light GT in which the scattered light of excitation light, red light, and green light is mixed can be set within a desired range. In this case, the red phosphor layer having a large calorific value, for example, may be provided on the side close to the heat sink. The color of the emitted light GT can also be varied by adjusting the light output of the excitation light G1 from the irradiation unit 20b and the light output of the excitation light from the irradiation unit 20c.

FIG. 9A is a partially cut schematic perspective view of a transmissive solid-state lighting device according to the sixth embodiment, and FIG. 9B is a partially cut schematic sectional view.
In the present embodiment, the wavelength conversion layer 54 increases the thickness of the wavelength conversion layer 54 that emits monochromatic light as it approaches the semiconductor light emitting element 10 side. As the wavelength conversion layer 54 becomes thicker, the optical output of the wavelength converted light emitted from the wavelength conversion layer 54 increases.

  On the other hand, since the excitation light absorbed by the wavelength conversion layer 54 increases and the excitation light transmitted through the wavelength conversion layer 54 decreases, the emission light GT has an emission color in which the emission spectrum of the wavelength conversion layer 54 is dominant. It becomes. For this reason, when the irradiation region moving means 24 moves the position of the irradiation unit 20b in the direction in which the wavelength conversion layer 54 becomes thicker, the emission color of the emission light GT is changed from the emission color in which the emission color of the excitation light is dominant. The emission color of the layer can be changed to the dominant emission color.

FIG. 10A is a partially cut schematic perspective view of the solid state lighting device according to the seventh embodiment, FIG. 10B is a partially cut schematic cross sectional view, and FIG. 10C is a schematic cross sectional view of a modification. .
On the inner wall 60a of the transparent tube 60, a first region 54c whose thickness is constant along the central axis 60c and a second region 54d whose thickness increases toward the light source are stacked in this order. The second wavelength converted light from the second region 54d must pass through the first region 54c. For this reason, it is preferable that the wavelength of the second wavelength converted light is longer than the wavelength of the first wavelength converted light emitted from the first wavelength conversion layer 54c. For example, the second wavelength converted light can be red light and the first wavelength converted light can be green light. When the irradiation unit 20b is moved in the direction in which the thickness of the second wavelength converted light 54d is increased by the irradiation region moving unit 24, the color of the emitted light GT is changed from the color in which the first wavelength converted light is dominant to the second. The wavelength-converted light can change to a dominant color. Note that the thickness of the wavelength conversion layer 54d may change stepwise instead of continuously.

  Further, as shown in FIG. 10C, the boundary between the first region 54a and the second region 54b may have a V-groove cross section. Since the cross-sectional area of the wavelength conversion layer changes, the chromaticity of the emission color GT can be changed.

FIG. 11A is a schematic perspective view of a light conversion unit constituting the solid-state lighting device according to the eighth embodiment, FIG. 11B is a schematic view showing the configuration of the solid-state lighting device, and FIG. It is a model perspective view of a light body.
The solid state lighting device includes a light source unit 10, a light emitting unit 92, and an irradiation region moving unit 24.

  The light emitting unit 92 includes a transparent tube 60, a plurality of (for example, 20) optical fibers 80, a fixing member 81 that bundles and fixes the optical fibers, and a rod-shaped light guide unit 20 that is provided with an irradiation unit 20b at the tip and is made of glass or the like. And a holding member 82 of the light guide 20, a reflection pin 84 coated with barium sulfate or the like, an upper fixing cap 86, a heat sink 88, and a stopper 88. For example, the light emitting unit 92 may have a length of approximately 110 mm and a heat sink 88 having a diameter of 50 mm. Moreover, the light guide part 20 shall be about 24 mm in length, 2.5 mm in diameter, etc., for example. For example, the tip of the light guide 20 is provided as a cone-shaped irradiation part 20b having a height of 1 to 2 mm. The length of the wavelength conversion layer 54 is 6 mm or the like.

  The transparent tube 60 includes, for example, YAG ceramics (thermal conductivity: 11.7 W / m · K), alumina ceramics (thermal conductivity: 33.5 W / m · K), quartz glass (thermal conductivity: 1.4 W / m). m · K) and the like are appropriately selected according to the heat generation amount of the wavelength conversion layer.

  Further, when the optical fiber 80 and the light guide unit 20 do not contact each other, a Fresnel loss occurs between the exit surface of the optical fiber 80 and the incident unit of the light guide unit 20. When antireflection treatment is performed on these end faces, Fresnel loss can be reduced. Alternatively, the optical fiber 80 and the light guide unit 20 may be integrated by fusion or the like.

12A is a schematic cross-sectional view of the light conversion unit of the solid state lighting device of the eighth embodiment, FIG. 12B is a schematic cross-sectional view in the vicinity of the transparent tube, and FIG. 12C is a schematic perspective view of the application example. Figure.
The excitation light emitted from the optical fiber is introduced into the light guide 20 and guided as shown by a solid line, then totally reflected by the conical surface, and provided around the irradiation part 20b as shown by a broken line. The wavelength conversion layer 54 is efficiently irradiated. In this case, the irradiation region moving unit 24 can change the chromaticity of the emitted light GT by changing the position of the irradiation unit 20b in a direction in which the light guide unit 20 extends, for example. Excitation light from the cone-shaped irradiation part 20b to the reflection pin 84 is slight, and heat generation in the light-emitting part 92 is substantially limited to the wavelength conversion layer 54. The semiconductor light emitting element 10 is provided apart from the light emitting unit 92. For this reason, the heat sink 88 may be small enough to have a size capable of radiating the heat of the light emitting portion 92.

  FIG. 12C is an application example of the solid-state lighting device of the eighth embodiment, and can be used for a vehicle headlamp, a street lamp, and the like by further providing and condensing a reflector 94.

  According to the first to eighth embodiments, there is provided a solid-state lighting device that can easily dissipate heat and can easily adjust chromaticity and color temperature. Such a solid state lighting device can be widely used for stage lighting, spot lighting, vehicle headlamps, and the like.

  Although several embodiments of the present invention have been described, these embodiments are presented by way of example and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the scope of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are included in the invention described in the claims and the equivalents thereof.

DESCRIPTION OF SYMBOLS 10 Light source part, 20 Light guide part, 20a Incident part, 20b Irradiation part, 24 Irradiation area moving means, 30 Thermal conduction part, 30a 1st surface, 30b Recessed part, 30c Central axis, 30d Inner wall, 50 Holding plate, 52 Reflection Layer, 54 wavelength conversion layer, 54a first region, 54b second region, 60 transparent tube, 60a inner wall, 60b outer wall, G1 excitation light, GT emission light

Claims (11)

A light source unit having a semiconductor light emitting element and emitting excitation light;
A light guide unit having an incident part into which the excitation light is introduced, and an irradiation part that emits the excitation light introduced into the incident part;
A wavelength conversion layer to which the excitation light emitted from the irradiation unit is irradiated, wherein the first region absorbs the excitation light and emits first wavelength conversion light having a wavelength longer than the wavelength of the excitation light; A second region that absorbs the excitation light and emits second wavelength converted light having a wavelength longer than the wavelength of the excitation light, wherein the first wavelength converted light and the second wavelength converted light are The emission spectrum is different or the ratio of the optical output of the first wavelength converted light to the optical output of the excitation light emitted through the first region and the excitation light emitted through the second region A wavelength conversion layer having a different ratio of the light output of the second wavelength converted light to the light output;
An irradiation region moving means for changing an irradiation position on the surface of the wavelength conversion layer of the excitation light emitted from the irradiation unit;
A solid state lighting device. A heat conduction portion having a recess recessed from the first surface, and having an inner wall provided around the central axis of the recess and widened toward the first surface;
The first region and the second region are respectively disposed at different positions on the inner wall along a circumferential direction around the central axis;
The solid-state lighting device according to claim 1, wherein at least one of the heat conducting unit and the irradiation unit rotates around the central axis. A heat conduction portion having a recess recessed from the first surface, and having an inner wall provided around the central axis of the recess and widened toward the first surface;
The first region and the second region are respectively disposed on the inner wall at different positions along the central axis;
The solid-state lighting device according to claim 1, wherein at least one of the heat conducting unit and the irradiation unit moves along the central axis.   The solid-state lighting device according to claim 2, further comprising a cover portion that covers the concave portion and includes a light diffusion layer.   The solid state lighting device according to claim 4, wherein the cover portion further includes a wavelength conversion layer. A substrate provided on the inner wall, further comprising a holding plate and a reflective layer provided on a surface of the holding plate;
The wavelength conversion layer is provided on the first surface side so as to cover the reflective layer, or provided on the holding plate side opposite to the reflective layer and on the first surface side. The solid-state lighting device according to any one of claims 2 to 5. Further comprising a transparent tube having a central axis;
The first region and the second region are respectively provided so as to cover the inner wall of the transparent tube and along the central axis,
The solid state lighting device according to claim 1, wherein at least one of the transparent tube and the irradiation unit moves in a direction parallel to the central axis.   The solid state lighting device according to claim 7, wherein the first region and the second region are disposed adjacent to different positions along the central axis. The first region covers the inner wall,
The solid state lighting device according to claim 7, wherein the second region covers the first region.   The solid-state lighting device according to claim 9, wherein at least one of the first region and the second region gradually increases in thickness along the central axis.   The said irradiation part is one end part of the light guide which guides the said excitation light, or is a mirror which bend | folds the said excitation light propagated in space. Solid state lighting device.