JP2016021810A - Thermophotovoltaic power generator - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a technique capable of converting radiant light into electric power with a high conversion efficiency.SOLUTION: The thermophotovoltaic power generator includes: a radiation part (11); a receiving part (13); and a reflection part (15). The radiation part radiates radiant light being heated by the heat source device. The receiving part has a photoelectric conversion element (25) that receives the radiant light to convert the same into electric power. The reflection part is disposed between the radiation part and the receiving part. The reflection part has a light transmission property and selectively reflects a component of the radiant light, which is radiated from the radiation part in a predetermined wavelength region, to the radiation part. Here, the predetermined wavelength region means a wavelength region corresponding to a wavelength region of light which cannot be converted into the eclectic power by the photoelectric conversion element.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a thermophotoelectric generator that converts radiant light into electric power by a photoelectric conversion element.

  The thermoluminescent power generation apparatus has an advantage that no abrasion or vibration occurs because no mechanical operation is involved in power generation. On the other hand, while radiation light has a wide wavelength distribution, photoelectric conversion elements can only convert light with a wavelength shorter than the absorption edge wavelength corresponding to the semiconductor band gap into electricity, and are ineffective wavelengths that do not contribute to power generation of the photoelectric conversion elements. The emission of light in the band leads to a decrease in conversion efficiency.

  In order to improve the conversion efficiency, for example, in a thermophotoelectric power generation apparatus that heats a luminescent material that emits radiant light with a gas, each luminescent material having a luminescent property suitable for the combustion gas temperature that changes in the combustion gas path is disposed. A technique has been proposed (see Patent Document 1).

Japanese Patent No. 4134815

  However, even in the technique of Patent Document 1, there is no change in that the radiation light in an invalid wavelength band that does not contribute to the conversion of the photoelectric conversion element is emitted without limitation, which is a cause of hindering the improvement of the conversion efficiency.

  An object of this invention is to provide the technique which can convert radiant light into electric power with high conversion efficiency.

  The thermophotoelectric generator of the present invention includes a radiator (11), a light receiving part (13), and a reflecting part (15). The radiator is heated by the heat source device and emits radiation light. The light receiving unit includes a photoelectric conversion element (25) that receives the radiation light and converts it into electric power.

  The reflector is disposed between the radiator and the light receiver, has light transparency, and selectively reflects a component in a predetermined wavelength region of the radiated light emitted from the radiator to the radiator. The predetermined wavelength range here is a wavelength range corresponding to a wavelength range of light that cannot be converted into electric power by the photoelectric conversion element.

  In the thus configured thermophotovoltaic power generation device, the radiation component irradiated to the light receiving portion is reduced by reflecting the wavelength component that cannot be converted into electricity by the photoelectric conversion element by the reflecting portion. Further, since the light reflected by the reflecting portion returns to the radiator, it acts again as a heat source for heating the radiator. Therefore, the thermophotoelectric generator of the present invention can convert radiant light into electric power with high conversion efficiency.

  In addition, the code | symbol in the parenthesis described in this column and a claim shows the correspondence with the specific means as described in embodiment mentioned later as one aspect, Comprising: The technical scope of this invention is shown. It is not limited.

It is a perspective sectional view showing the composition of the thermophotoelectric generator of a 1st embodiment. It is side surface sectional drawing which shows the structure of the thermophotoelectric power generation apparatus of 1st Embodiment. It is a graph which shows the spectral intensity of the radiation light discharge | released from a radiator. It is a graph which shows the transmittance | permeability of quartz glass. It is a graph which shows the reflective characteristic of a 1st infrared reflective layer. It is a graph which shows the spectrum intensity | strength of the radiated light emitted from the radiator and passed through the 1st infrared reflective layer. It is a graph which shows the reflective characteristic of a 2nd infrared reflective layer. It is a graph which shows the spectrum intensity | strength of the radiant light emitted from the radiator and passed only through the 2nd infrared reflective layer. It is a graph which shows the spectrum intensity | strength of the radiation light discharge | released from the radiator and passed through the 1st infrared reflection layer and the 2nd infrared reflection layer. It is sectional drawing which shows the structure of the thermophotoelectric power generation apparatus of 2nd Embodiment.

Embodiments to which the present invention is applied will be described below with reference to the drawings.
[1. First Embodiment]
[1-1. Constitution]
The thermophotoelectric generator 1 shown in FIGS. 1 and 2 includes a radiator 11, a light receiving unit 13, and a reflecting unit 15. All of them are cylindrical, and are arranged in the order of the radiator 11, the reflector 15, and the light receiver 13 from the inside. FIG. 1 is a perspective view of the AA cross section of FIG. FIG. 2 is a cross-sectional view in a plane passing through the central axis of the radiator 11. Moreover, FIG.1 and FIG.2 shows typically the structure of the thermophotoelectric generator 1, and the magnitude | size etc. of each component may not be accurate.

  As shown in FIG. 2, the thermophotoelectric generator 1 can be configured as a nested structure. A burner 41 is disposed inside the radiator 11 as a heat source. The radiator 11 is supported by the support 43. Since the radiator 11 is heated to a high temperature, the light receiving unit 13 and the reflecting unit 15 are supported by a support 45 different from the support 43 in order to suppress heat conduction from the radiator 11.

  As described above, the radiator 11 has a cylindrical shape, and a structure for narrowing the radiation wavelength can be provided on the outer peripheral side. Specifically, it is conceivable to narrow the radiation wavelength band by coating a rare earth oxide and using transition between levels of rare earth elements (see, for example, JP-A-2000-272955). Further, the band may be narrowed by forming a fine periodic structure on the surface of the radiator 11 and utilizing a resonance phenomenon (see, for example, Japanese Patent No. 3472828).

Although a structure for narrowing the wavelength band is not provided on the inside of the radiator 11, radiation light emitted to the inside is reabsorbed by the radiator 11 and acts as a heat source, so that no heat energy is lost.
Radiator 11 material was sintered by mixing 10 mol% of _Pr 2 _{O 3} in _Al 2 _{O 3} is used. As described above, the radiator 11 is maintained at a high temperature by the heat supplied from the heat source (burner 41) disposed inside. FIG. 3 shows the spectral intensity of the radiation when the radiator 11 is heated to 1850K. The solid line in the figure is the radiant energy from the radiator 11 at 1850K, and the broken line is the radiant energy from the black body at the same temperature as a reference (the same applies to the following graphs).

  As shown in FIG. 1, the light receiving unit 13 includes a large number of photoelectric conversion elements 25 disposed on the inner surface of a cylindrical substrate 21, and is disposed so as to surround the radiator 11 and the reflecting unit 15. ing. Radiant light emitted from the radiator 11 and transmitted through the reflector 15 enters the photoelectric conversion element 25 (arrow 2 in FIG. 1) and is converted into electric power.

In FIG. 1, the photoelectric conversion element 25 shows a partial arrangement of the photoelectric conversion element 25, and is actually widely arranged on the entire inner side of the substrate 21.
In this embodiment, GaSb is used as the photoelectric conversion element 25, and the absorption edge wavelength is 1.72 μm. That is, since radiation light having a wavelength longer than 1.72 μm is not converted into electricity, it is desired to reduce the degree of irradiation with radiation having a longer wavelength than that in order to improve conversion efficiency (power generation efficiency). .

Although the material of the board | substrate 21 is not specifically limited, It is desirable to have the function to have heat resistance and a shape.
The reflector 15 reflects light in a wavelength region that does not contribute to power generation by the light receiver 13 and returns it to the radiator 11 (arrow 3 in FIG. 1), and is disposed outside the radiator 11 via a gap. . This void is kept in a vacuum (in this embodiment, 10 Pa or less).

The reflection unit 15 includes a cylindrical glass substrate 31, a first infrared reflection layer 33 that covers the inner surface of the glass substrate 31, and a second infrared reflection layer 35 that covers the outer surface of the glass substrate 31. Prepare. The first infrared reflecting layer 33 is an example of the first reflecting layer in the present invention, and the second infrared reflecting layer 35 is used.
Is an example of the second reflective layer in the present invention.

  The glass substrate 31 is a transparent glass having optical transparency. In the present embodiment, quartz glass (ED-H or ED-C manufactured by Tosoh Quartz Co., Ltd.) is used as the transparent glass. The glass substrate 31 serves as a support that supports each infrared reflection layer.

  FIG. 4 shows a graph showing the transmittance of the quartz glass having a thickness of 10 mm (cited from http://www.tqgj.co.jp/silicaglass/optical.html). In the visible region, the transmittance is high and transparent. However, when the wavelength of infrared rays exceeds about 3 μm, the transmittance gradually decreases and the absorption rate increases, and this is large for infrared rays with wavelengths longer than about 3.8 μm. Absorb part.

Next, the first infrared reflection layer 33 and the second infrared reflection layer 35 will be described. It is known that infrared reflectance can be increased by alternately laminating a plurality of dielectric films (for example, TiO ₂ and SiO ₂ ) having different refractive indexes. By utilizing this, a reflection layer having appropriate reflection characteristics is formed.

The first infrared reflection layer 33 has a total of 10 layers of (TiO ₂ : 306 nm / SiO ₂ : 568 nm) × 4 periods + (TiO ₂ : 306 nm) + (SiO ₂ : 284 nm) from the side close to the glass substrate 31. The laminated structure has the reflection characteristics shown in FIG. As shown in FIG. 5, high reflectance is shown for infrared rays having a wavelength of 2.5 μm or more, and particularly high reflectance is shown at wavelengths of 3 μm or more.

  That is, the first infrared reflection layer 33 reflects most of infrared rays (about 3 μm or more) having a longer wavelength than the wavelength absorbed by the glass substrate 31 to the radiator 11 side. FIG. 6 is a graph showing the spectral intensity of the radiation emitted from the radiator 11, passing through the first infrared reflection layer 33, and reaching the glass substrate 31. As can be seen from FIG. 6, the infrared rays in the wavelength region having a high absorption rate of the glass substrate 31 (particularly a high absorption rate of 3.8 μm or more) are greatly reduced.

  Thereby, of the radiant energy from the radiator 11, most of the energy corresponding to the infrared energy having a wavelength of 2.5 μm or more, particularly the lower area of 3.8 μm or more in the solid line in FIG. Absorption can be suppressed, and when the long wavelength component passes through the glass substrate 31, it is absorbed by the glass substrate 31 as thermal energy, thereby suppressing energy loss and simultaneously increasing the temperature of the glass substrate 31. it can.

The second infrared reflective layer 35 has a total of 10 layers of (TiO ₂ : 204 nm / SiO ₂ : 379 nm) × 4 periods + (TiO ₂ : 204 nm) + (SiO ₂ : 190 nm) from the side close to the glass substrate 31. The stacked structure has the characteristics shown in FIG. As shown in FIG. 7, the second infrared reflection layer 35 has a reflection band shifted to the short wavelength side as compared with the first infrared reflection layer, and has a wavelength of 1.8 to 2.8 μm. Reflects more than 95% of infrared rays.

  FIG. 8 is a graph showing the spectral intensity of the radiation light that has passed through only the second infrared reflection layer 35. As can be seen from FIG. 8, the radiation light having passed through the second infrared reflection layer 35 contains almost no light having a wavelength of 1.8 to 2.8 μm. On the other hand, light in the absorption wavelength region of quartz glass is included in a larger amount than when it passes through the first infrared reflection layer 33.

  FIG. 9 is a graph showing the spectral intensity of the radiation light that has passed through the first infrared reflection layer 33 and the second infrared reflection layer 35. As can be seen from FIG. 9, most of the spectral intensity is in the wavelength range of 1.72 μm or less where electrical conversion by the GaSb photoelectric conversion element is possible, and the light irradiated to the photoelectric conversion element 25 is electrically converted with high conversion efficiency. Can be converted to

  That is, the second infrared reflection layer 35 is configured to receive most of infrared rays having wavelengths that cannot be photoelectrically converted by the photoelectric conversion element 25 of the light receiving unit 13 among infrared rays that have passed through the first infrared reflection layer 33 and the glass substrate 31. Reflected to the radiator 11 side.

  The light in the wavelength range reflected by the second infrared reflection layer 35 passes through the glass substrate 31 in a reciprocating manner, but the glass for the light in the wavelength range that has passed through the first infrared reflection layer 33 is used. Since the transmittance of the substrate 31 is high, the energy loss is negligible. Further, the amount of the component of 4 μm or more in the radiant light reaches the photoelectric conversion element is small. This is because the amount of emission from the radiator 11 is originally small although a part is absorbed by the glass substrate 31.

  By the way, for the production of multilayer infrared reflective films such as the first infrared reflective layer 33 and the second infrared reflective layer 35 described above, vacuum thin film forming methods such as vacuum deposition, sputtering, and ion plating are applied. it can. A uniform film can be formed on the cylindrical surface by forming the film by the film forming method described above while rotating the cylinder (glass substrate 31).

[1-2. Action and Effect]
According to the first embodiment described in detail above, the following operations and effects can be obtained.
[1A] The thermophotoelectric generator 1 includes a radiator 11, a light receiving unit 13, and a reflecting unit 15. The radiator 11 is heated by the burner 41 which is a heat source device, and emits radiation light. The light receiving unit 13 includes a photoelectric conversion element 25 that receives radiation light emitted from the radiator 11 and converts it into electric power.

  The reflector 15 is disposed between the radiator 11 and the light receiver 13, has light transparency, and selectively reflects light in a predetermined wavelength range to the radiator 11. Here, the predetermined wavelength range is a wavelength range of 1.8 μm or more, and corresponds to a wavelength range (1.72 μm or more) of light that cannot be converted into electric power by the photoelectric conversion element 25.

  Therefore, the component of the wavelength that cannot be converted into electricity by the photoelectric conversion element 25 is reduced in the radiation light applied to the light receiving unit 13, and the radiation light that cannot be converted into electricity is reflected by the reflecting unit 15 and radiated. It returns to the body 11 and acts as a heat source for heating the radiator 11 again.

Therefore, radiation light having a wavelength that is not converted into electricity by the photoelectric conversion element 25 irradiated to the light receiving unit 13 can be reduced, and electric power can be generated with high conversion efficiency.
[1B] Further, in the thermophotovoltaic power generation device 1, the reflecting portion 15 is disposed on the glass base 31 serving as a light-transmitting support and the glass base 31, and has light transmittance and has a predetermined wavelength range. A reflective layer (first infrared reflective layer 33 and second infrared reflective layer 35) that selectively reflects light. Thus, the reflective part 15 can be suitably comprised by arrange | positioning a reflection layer by using the glass base 31 as a support body.

  [1C] Further, in the thermophotoelectric generator 1, the first infrared reflection layer 33 is disposed on the surface of the glass substrate 31 facing the radiator 11, and in the wavelength range of light absorbed by the glass substrate 31 (3 μm or more). Reflects light in the corresponding wavelength region (2.5 μm or more).

  The second infrared reflection layer 35 is disposed on the surface of the glass substrate 31 that faces the light receiving unit 13, and has a wavelength range (1) that corresponds to the wavelength range (1.72 μm or more) of light that cannot be photoelectrically converted by the photoelectric conversion element 25. .8 to 2.8 μm).

  By arranging the reflective layer in this way, absorption of radiation light in the glass substrate 31 can be suppressed. The energy of the radiant light absorbed by the glass substrate 31 is consumed as the temperature of the glass substrate 31 is increased, so that the energy loss occurs. However, the decrease in power conversion efficiency can be suppressed by suppressing the absorption of the radiant light. In addition, it is possible to suppress deterioration due to the temperature rise of the glass substrate 31, and it is also possible to suppress the deterioration of the film quality due to the high temperature of the reflective layer disposed on the glass substrate 31.

  Further, the first infrared reflection layer 33 and the second infrared reflection layer 35 partially overlap the highly reflective wavelength range, and the reflection performance of the second infrared reflection layer 35 is degraded. The wavelength region of 8 μm or more is reflected by the first infrared reflection layer 33. Therefore, it is also possible to suppress light in that wavelength range from reaching the light receiving unit 13.

  [1D] Moreover, in the thermophotoelectric generator 1, the reflecting portion 15 and the light receiving portion 13 are cylindrical in appearance, the radiator 11 is disposed inside the reflecting portion 15, and the photoelectric conversion element 25 is the light receiving portion 13. It is arranged on the inside surface. Therefore, the radiation light emitted from the radiator 11 efficiently reaches the light receiving unit 13, and the radiation light reflected by the reflecting unit 15 efficiently returns to the radiator 11. Therefore, the loss of radiant light is reduced, and the conversion efficiency can be improved.

  [1E] Moreover, since the reflection part 15 is arrange | positioned at intervals from the radiator 11, the thermophotoelectric generator 1 can suppress that the high heat | fever of the radiator 11 is transmitted to the reflection part 15 by conduction heat transfer, and reflection. It can suppress that each element of the part 15 deteriorates by a temperature rise.

  If the reflective layer is provided directly on the radiator, and if the radiator is heated to a high temperature around 1000 ° C, it will cause deterioration of the film quality and peeling due to the difference in coefficient of thermal expansion. I can't let you.

  Moreover, in the thermophotoelectric generator 1, the space between the reflection part 15 and the radiator 11 is a vacuum. By making a vacuum, heat loss due to convective heat transfer that does not contribute to power generation can be eliminated, and conversion efficiency can be improved. Further, deterioration of the radiator 11 due to oxidation or the like can be suppressed.

  The space between the reflector 15 and the radiator 11 only needs to be in a state where the pressure is reduced from the atmospheric pressure. If the pressure is reduced from the atmospheric pressure, compared to the case where the space is the atmospheric pressure, As described above, conversion efficiency can be improved and deterioration of the radiator 11 can be suppressed.

[2. Second Embodiment]
[2-1. Difference from the first embodiment]
Since the thermophotovoltaic generator 51 of the second embodiment uses the same components as the thermophotovoltaic generator 1 of the first embodiment, the description of the common configuration will be omitted, and differences will be mainly described. .

  In 1st Embodiment mentioned above, the structure which provided the 1st infrared reflection layer 33 in the inner surface of the glass base | substrate 31, and provided the 2nd infrared reflection layer 35 in the outer surface as the reflection part 15 was illustrated. . On the other hand, as shown in FIG. 10, the thermophotovoltaic power generation device 51 of the present embodiment includes a glass base 31 and a second infrared reflection layer 35 disposed on the inner surface of the glass base 31. 53 is configured.

[2-2. Action and Effect]
The radiation light that has passed through the second infrared reflection layer 35 has the spectral intensity shown in FIG. 8, and the light in the wavelength region that the glass substrate 31 absorbs is compared with that before passing through the second infrared reflection layer 35. Has been reduced. Therefore, according to the thermophotoelectric generator 51, the radiant light having a wavelength that is not converted into electricity by the photoelectric conversion element 25 irradiated to the light receiving unit 13 can be reduced, as in the thermophotoelectric generator 1 of the first embodiment described above. Power can be generated with high conversion efficiency.

[3. Other Embodiments]
As mentioned above, although embodiment of this invention was described, this invention can take a various form, without being limited to the said embodiment.

  [3A] In the above embodiment, the configuration in which the glass substrate 31 is used as the support of the reflecting portion 15 is exemplified, but the material that can be used as the support is not limited to the quartz glass described in the present embodiment, and various Can use various materials. For example, it is possible to use borosilicate glass, soda lime glass, a transparent resin film, or the like.

  The support only needs to have a transparency that does not completely block light in a wavelength region that can be photoelectrically converted by the photoelectric conversion element 25, but a material that has a higher transparency to the wavelength region can be absorbed by the support. Can reduce energy loss.

Moreover, deterioration of a support body can be suppressed by employ | adopting the material which has heat resistance as a support body. Examples of the deterioration of the support include a change in shape and a decrease in transmittance.
In the above embodiment, the reflection characteristics of the first infrared reflection layer 33 and the second infrared reflection layer 35 are determined in accordance with the light transmission characteristics of the quartz glass shown in FIG. Therefore, when a different support is used, the design of the reflective layer can be changed in accordance with the characteristics.

  For example, the transmittance of borosilicate glass or soda lime glass is lowered in a wavelength region longer than 2.8 μm, which is about 1 μm shorter than quartz glass. In this case, the same effect as [1A] and [2A] can be obtained by using the same infrared reflection layer as in the above embodiment, but the infrared reflection layer has a reflection characteristic different from that in the above embodiment. May be used.

  As the transparent resin film, polyethylene, polycarbonate, or the like can be used. Polyethylene strongly absorbs wavelengths of about 3.4 to 3.5 μm, but by using the first infrared reflection layer 33 whose characteristics are shown in FIG. 5, light in the above wavelength region is absorbed by the polyethylene. Can be suppressed to a high degree.

  Moreover, even if only the second infrared reflection layer 35 having the characteristics shown in FIG. 7 is disposed on the surface facing the radiator on the polyethylene support, irradiation with light in the above-mentioned wavelength region can be suppressed by about 50%. The heat generation due to light absorption can be suppressed to about ½.

  Moreover, in the said embodiment, although the structure which uses a GaSb element as the photoelectric conversion element 25 was illustrated, you may use an element other than that. As an example, a Si element or an InAs element can be used. Since these elements have different absorption edge wavelengths corresponding to the semiconductor band gap and different wavelength regions that can be converted into electricity, the design of the reflective layer may be changed in accordance with the characteristics of the elements used.

  Moreover, in the said embodiment, the external appearance of the reflection part 15 and the light-receiving part 13 is cylindrical shape, the radiator 11 is arrange | positioned inside the reflection part 15, and the photoelectric conversion element 25 is arrange | positioned on the inner surface of the light-receiving part 13. Although the configuration to be performed is exemplified, other configurations may be used.

  For example, the reflecting portion and the light receiving portion may have a planar shape or a curved shape that is not cylindrical, or may be a substantially cylindrical shape other than a cylindrical shape. The term “substantially cylindrical” includes a shape that is generally cylindrical but partially different. In addition, by making it cylindrical, the rate at which radiant light reaches the light receiving portion can be increased, and energy loss can be reduced.

  Further, either one or both of the reflecting part and the light receiving part may be substantially spherical. In the case of a spherical shape, for example, a spherical reflecting portion may be disposed around the radiator, and a spherical light receiving portion may be disposed around the spherical reflecting portion. The first infrared reflection layer may be disposed on the inner surface of the support of the light receiving unit, and the second infrared reflection layer may be disposed on the outer surface of the support. Of course, only one infrared reflecting layer may be arranged.

  Moreover, in the said embodiment, although the structure which nests the radiator 11 and the reflection part 15 and leaves those space | intervals was illustrated, the specific structure is not specifically limited and various structures are applicable.

Moreover, in the said embodiment, although the structure which uses the burner 41 as a heat source which heats the radiator 11 was illustrated, not only a burner but various heat sources can be utilized.
[3B] At least a part of the configuration of the above embodiment may be replaced with a known configuration having the same function. Moreover, you may abbreviate | omit a part of structure of the said embodiment. In addition, at least a part of the configuration of the above embodiment may be added to or replaced with the configuration of the other embodiment. In addition, all the aspects included in the technical idea specified only by the wording described in the claim are embodiment of this invention.

DESCRIPTION OF SYMBOLS 1 ... Thermophotoelectric generator, 11 ... Radiant, 13 ... Light-receiving part, 15 ... Reflection part, 25 ... Photoelectric conversion element, 31 ... Glass base | substrate, 33 ... 1st infrared reflection layer, 35 ... 2nd infrared Reflective layer, 41... Burner, 51.

Claims (7)

A radiator (11) that is heated by a heat source device (41) to emit radiation light; and
A light receiving section (13) including a photoelectric conversion element (25) that receives the radiation and converts it into electric power;
A reflection that is disposed between the radiator and the light receiving unit, has light transparency, and selectively reflects a component in a predetermined wavelength range to the radiator from the radiation light emitted from the radiator. Part (15, 53),
The said predetermined wavelength range is a wavelength range corresponding to the wavelength range of the light which the said photoelectric conversion element cannot convert into electric power. The thermophotoelectric generator characterized by the above-mentioned. The thermophotovoltaic power generator according to claim 1,
The reflective portion is
A support (31) having optical transparency;
A reflective layer (33, 35) disposed on the support and having light transmission properties, and selectively reflecting the light in the predetermined wavelength range to the radiator. Power generation device. The thermophotovoltaic power generator according to claim 2,
The reflective layer corresponds to a first reflective layer (33) that reflects light in a wavelength range corresponding to a wavelength range of light absorbed by the support, and a wavelength range of light that cannot be converted into electric power by the photoelectric conversion element. A second reflective layer (35) for reflecting light in a wavelength range to be
The first reflective layer is disposed on a surface of the support that faces the radiator, and the second reflective layer is disposed on a surface of the support that faces the light receiving unit. Photovoltaic generator. The thermophotovoltaic power generator according to claim 2,
The reflective layer is disposed on a surface of the support that faces the radiator. The thermophotoelectric generator according to any one of claims 1 to 4,
The reflection part and the light receiving part are substantially cylindrical or spherical in shape.
The radiator is disposed inside the reflecting portion, and the photoelectric conversion element is disposed on an inner surface of the light receiving portion. The thermophotovoltaic power generator according to any one of claims 1 to 5,
The said reflection part is arrange | positioned at intervals from the said radiator. The thermophotoelectric generator characterized by the above-mentioned. The thermophotovoltaic power generator according to claim 6,
The space between the reflection part and the radiator is in a state where the pressure is reduced from the atmospheric pressure.