JP2016088789A - Device and method for producing silicon carbide single crystal - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a device and method for producing a silicon carbide single crystal that can suppress time variation of temperature of a crucible.SOLUTION: A silicon carbide single crystal production device 100 includes a crucible 5, a first resistance heater 1, a second resistance heater 2, a third resistance heater 3, a first partition part 4a, and a second partition part 4b. The crucible 5 has a top surface 5a1, a bottom surface 5b2 opposite to the top surface 5a1, and a cylindrical side surface 5b1 located between the top surface 5a1 and the bottom surface 5b2. The first resistance heater 1 is installed so as to face the bottom surface 5b2. The second resistance heater 2 is configured to enclose the side surface 5b1. The first partition part 4a is installed so that at least a part of radiant light from the second resistance heater is blocked from reaching the first resistance heater. The first partition part 4a is located outside a part 5c of the side surface 5b1 facing the second resistance heater 2.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a silicon carbide single crystal manufacturing apparatus and a silicon carbide single crystal manufacturing method.

  In recent years, in order to enable a semiconductor device to have a high breakdown voltage and a low loss, silicon carbide is being adopted as a material constituting the semiconductor device.

  JP-T-2012-510951 (Patent Document 1) describes a method of producing a silicon carbide single crystal by a sublimation method using a graphite crucible. A resistance heater is provided on each of the upper and lower sides of the crucible.

Special table 2012-510951 gazette

  An object of one embodiment of the present invention is to provide an apparatus for manufacturing a silicon carbide single crystal and a method for manufacturing a silicon carbide single crystal that can suppress temporal variations in the temperature of the crucible.

  An apparatus for producing a silicon carbide single crystal according to one embodiment of the present invention includes a crucible, a first resistance heater, a second resistance heater, and a first partition portion. The crucible has a top surface, a bottom surface opposite to the top surface, and a cylindrical side surface located between the top surface and the bottom surface. The first resistance heater is provided to face the bottom surface. The second resistance heater is configured to surround the side surface. The 1st partition part is provided so that at least one part of the radiated light from a 2nd resistance heater may reach | attain a 1st resistance heater. The 1st partition part is located outside the part of the side which a 2nd resistance heater faces.

  An apparatus for producing a silicon carbide single crystal according to one embodiment of the present invention is an apparatus for producing a silicon carbide single crystal by a sublimation method, and includes a crucible, a first resistance heater, a second resistance heater, and a third resistance heater. The 1st partition part and the 2nd partition part are provided. The crucible has a top surface, a bottom surface opposite to the top surface, and a cylindrical side surface located between the top surface and the bottom surface. The first resistance heater is provided to face the bottom surface. The second resistance heater is configured to surround the side surface. The third resistance heater is provided facing the top surface. The second resistance heater has a first surface located on the top surface side, a second surface located on the bottom surface side, a third surface facing the side surface, and a third surface in a direction from the bottom surface to the top surface. And the fourth surface on the opposite side. The first partition portion is located on the second surface side and is provided so as to protrude from the entire periphery of the side surface to the outside of the crucible. The second partition portion is located on the first surface side and is provided so as to protrude from the entire periphery of the side surface to the outside of the crucible. When viewed from the inner space of the crucible, the fourth surface of the second resistance heater is located distal to the outer end of at least one of the first partition portion and the second partition portion in a direction parallel to the bottom surface, and At least one outer end is located distal to the outer end of the first resistance heater.

  The manufacturing method of the manufacturing apparatus of the silicon carbide single crystal which concerns on 1 aspect of this invention is equipped with the following processes. A crucible having a top surface, a bottom surface opposite to the top surface, and a cylindrical side surface located between the top surface and the bottom surface, a first resistance heater provided facing the bottom surface, and surrounding the side surface The second resistance heater configured as described above, the partition located outside the side portion facing the second resistance heater, the raw material provided inside the crucible, and the raw material facing the inside of the crucible And the seed crystal provided are prepared. A silicon carbide single crystal is grown on the seed crystal by sublimating the raw material. In the step of growing the silicon carbide single crystal, the bottom surface and the first resistance heater of the first resistance heater are provided in a state where the partition portion is provided so as to prevent at least a part of the radiated light from the second resistance heater from reaching the first resistance heater. The power supplied to the first resistance heater is determined based on at least one of the temperatures, and the power supplied to the second resistance heater is determined based on the temperature of at least one of the side surface and the second resistance heater.

  According to the above, it is possible to provide a silicon carbide single crystal manufacturing apparatus and a silicon carbide single crystal manufacturing method capable of suppressing the temporal variation of the temperature of the crucible.

It is a longitudinal cross-sectional schematic diagram which shows the structure of the manufacturing apparatus of the silicon carbide single crystal which concerns on embodiment of this invention. It is a perspective schematic diagram which shows the structure of a 2nd resistance heater. It is a plane schematic diagram which shows the structure of a 2nd resistance heater and an electrode. FIG. 4 is a schematic cross-sectional view taken along the line IV-IV in FIG. 1, and is a diagram illustrating a configuration of a first resistance heater and electrodes. It is an arrow cross-sectional schematic diagram along the VV line | wire of FIG. 1, and is a figure which shows the structure of a 3rd resistance heater and an electrode. It is an arrow cross-sectional schematic diagram along the VI-VI line of FIG. 1, and is a figure which shows the structure of a 1st partition part and an accommodating part. It is a longitudinal cross-sectional schematic diagram which shows the structure of the 1st modification of the manufacturing apparatus of the silicon carbide single crystal which concerns on embodiment of this invention. It is a longitudinal cross-sectional schematic diagram which shows the structure of the 2nd modification of the manufacturing apparatus of the silicon carbide single crystal which concerns on embodiment of this invention. FIG. 9 is a schematic cross-sectional view taken along the line IX-IX in FIG. 8, and shows a configuration of a second partition portion and a pedestal. It is a longitudinal cross-sectional schematic diagram which shows the structure of the 3rd modification of the manufacturing apparatus of the silicon carbide single crystal which concerns on embodiment of this invention. It is a longitudinal cross-sectional schematic diagram which shows the structure of the 4th modification of the manufacturing apparatus of the silicon carbide single crystal which concerns on embodiment of this invention. It is a longitudinal cross-sectional schematic diagram which shows the structure of the 5th modification of the manufacturing apparatus of the silicon carbide single crystal which concerns on embodiment of this invention. It is a flowchart which shows the manufacturing method of the silicon carbide single crystal which concerns on embodiment of this invention. It is a longitudinal cross-sectional schematic diagram which shows the 1st process of the manufacturing method of the silicon carbide single crystal which concerns on embodiment of this invention. It is a longitudinal cross-sectional schematic diagram which shows the 2nd process of the manufacturing method of the silicon carbide single crystal which concerns on embodiment of this invention. It is a figure which shows the relationship between the temperature of a crucible, and time. It is a figure which shows the relationship between the pressure in a chamber, and time. It is a functional block diagram which shows the method of performing feedback control of the electric power supplied to a resistance heater. It is a figure which shows the relationship between the electric power supplied to a resistance heater, and time in the manufacturing method of the silicon carbide single crystal which concerns on an Example. It is a figure which shows the relationship between the temperature of a crucible, and time in the manufacturing method of the silicon carbide single crystal which concerns on an Example. It is a longitudinal cross-sectional schematic diagram which shows the manufacturing method of the silicon carbide single crystal which concerns on a comparative example. It is a figure which shows the relationship between the electric power supplied to a resistance heater, and time in the manufacturing method of the silicon carbide single crystal which concerns on a comparative example. It is a figure which shows the relationship between the temperature of a crucible, and time in the manufacturing method of the silicon carbide single crystal which concerns on a comparative example.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following drawings, the same or corresponding parts are denoted by the same reference numerals, and description thereof will not be repeated. In the crystallographic description in this specification, the individual orientation is indicated by [], the collective orientation is indicated by <>, the individual plane is indicated by (), and the collective plane is indicated by {}. As for the negative index, “−” (bar) is attached on the number in crystallography, but in this specification, a negative sign is attached before the number.

  In the resistance heater described in JP-T-2012-510951, a portion facing the side surface of the crucible and a portion facing the bottom surface of the crucible are integrated. However, in order to more precisely control the temperature in the crucible, the resistance heater is separated into a first resistance heater that faces the bottom surface of the crucible and a second resistance heater that faces the side surface of the crucible, and is supplied to each resistance heater. It is conceivable to control the power to be generated independently.

  For example, as shown in FIG. 21, the second resistance heater 2 is provided around the side surface 5 b 1 of the crucible 5, is separated from the second resistance heater 2, and faces the bottom surface 5 b 2 of the crucible 5. Assume that 1 is provided. The temperature of the side surface 5b1 can be measured by a side radiation thermometer 9b provided outside the chamber 6. The electric power supplied to the second resistance heater 2 is feedback controlled so that the temperature of the side surface 5b1 is maintained constant based on the temperature of the side surface 5b1 measured by the side radiation thermometer 9b. For example, when the temperature of the side surface 5b1 is lower than the desired temperature, the power supplied to the second resistance heater 2 is increased to increase the heating of the side surface 5b1. On the other hand, when the temperature of the side surface 5b1 is higher than the desired temperature, the power supplied to the second resistance heater 2 is decreased to weaken the heating of the side surface 5b1. Similarly, the temperature of the bottom surface 5b2 can be measured by a lower radiation thermometer 9a provided outside the chamber 6. The electric power supplied to the first resistance heater 1 is feedback controlled based on the temperature of the bottom surface 5b2 measured by the lower radiation thermometer 9a so that the temperature of the bottom surface 5b2 is kept constant.

  For example, as shown in FIG. 21, when the power supplied to the first resistance heater 1 is increased, the second resistance heater 2 is heated by the radiation 13 from the first resistance heater 1. The temperature of 2 rises. When the temperature of the second resistance heater 2 increases, the temperature of the side surface 5b1 of the crucible 5 increases. When the temperature of the side surface 5b1 increases, the power supplied to the second resistance heater 2 decreases in order to maintain the temperature of the side surface 5b1 constant. That is, when the power supplied to the first resistance heater 1 is increased, the power supplied to the second resistance heater 2 is decreased. Conversely, when the power supplied to the second resistance heater 2 is increased, the power supplied to the first resistance heater 1 is decreased. That is, the first resistance heater 1 and the second resistance heater 2 interfere with each other.

  FIG. 22 is a diagram showing a relationship between electric power supplied to the resistance heater and time in the process of growing the silicon carbide single crystal using the silicon carbide single crystal manufacturing apparatus 100 shown in FIG. The vertical axis | shaft of FIG. 22 has shown the electric power supplied to a resistance heater, and the horizontal axis has shown time. As shown in FIG. 22, when the power supplied to the first resistance heater 1 increases, the power supplied to the second resistance heater 2 decreases due to the influence of the first resistance heater 1 on the second resistance heater 2. (Time t1, Time t3). On the contrary, when the power supplied to the second resistance heater 2 is increased, the power supplied to the first resistance heater 1 is reduced by the influence of the second resistance heater 2 on the first resistance heater 1 (time t2, Time t4). That is, as shown in FIG. 22, each of the power supplied to the second resistance heater 2 and the power supplied to the first resistance heater 1 due to the second resistance heater 2 and the first resistance heater 1 interfering with each other. Fluctuates periodically. The time variation cycle of the power of the second resistance heater 2 is substantially the same as the time variation cycle of the power of the first resistance heater 1. The phase of the time variation of the electric power of the second resistance heater 2 is substantially half-cycle shifted from the phase of the time variation of the electric power of the first resistance heater 1.

  FIG. 23 is a diagram showing the relationship between the temperature of the crucible and time in the step of growing a silicon carbide single crystal using the silicon carbide single crystal manufacturing apparatus 100 shown in FIG. The vertical axis | shaft of FIG. 23 has shown the temperature of the crucible, and the horizontal axis has shown time. As shown in FIG. 23, the temperature of the bottom surface 5b2 and the side surface 5b1 of the crucible 5 in the temperature measurement portion is constant. However, as shown in FIG. 22, the power supplied to the first resistance heater 1 varies significantly with time, so the temperature of the bottom surface 5b2 other than the temperature measurement portion varies significantly with time. it seems to do. Similarly, since the electric power supplied to the second resistance heater 2 varies greatly as time elapses, it is considered that the temperature of the side surface 5b1 other than the temperature measurement portion varies significantly as time elapses.

  Therefore, the inventors have devised to provide a partition 4a so as to prevent at least a part of the radiation 13 from the second resistance heater 2 from reaching the first resistance heater 1, as shown in FIG. . Since the crystal growth of the silicon carbide single crystal is performed under a pressure of about 1 kPa, for example, heat conduction between the first resistance heater 1 and the second resistance heater 2 is mainly performed by radiation. Therefore, by providing the partition portion 4a so as to block at least a part of the radiation light 13 from the second resistance heater 2, heat transfer from the first resistance heater 1 to the second resistance heater 2 is greatly suppressed. be able to. Similarly, it is possible to greatly suppress heat transfer from the second resistance heater 2 to the first resistance heater 1 by the partition portion 4a.

  FIG. 19 is a diagram showing a relationship between electric power supplied to the resistance heater and time in the process of growing the silicon carbide single crystal using the silicon carbide single crystal manufacturing apparatus 100 shown in FIG. The vertical axis in FIG. 19 indicates the power supplied to the resistance heater, and the horizontal axis indicates time. FIG. 20 is a diagram showing the relationship between the temperature of the crucible and the time in the step of growing the silicon carbide single crystal using the silicon carbide single crystal manufacturing apparatus 100 shown in FIG. The vertical axis | shaft of FIG. 20 has shown the temperature of the crucible, and the horizontal axis has shown time. In the silicon carbide single crystal manufacturing apparatus shown in FIG. 14, a partition 4 a is provided so as to prevent at least a part of the radiation 13 from the second resistance heater 2 from reaching the first resistance heater 1.

As shown in FIG. 20, the temperature of the bottom surface 5b2 and the side surface 5b1 of the crucible 5 in the temperature measurement portion is constant. As shown in FIG. 19, the fluctuation range of the electric power supplied to each of the first resistance heater 1 and the second resistance heater 2 when the silicon carbide single crystal manufacturing apparatus provided with the partition 4a is used This is significantly less than the fluctuation range (see FIG. 22) of the electric power supplied to each of the first resistance heater 1 and the second resistance heater 2 when using a silicon carbide single crystal manufacturing apparatus in which the portion 4a is not provided. The Therefore, compared with the case where a silicon carbide single crystal is grown using a silicon carbide single crystal production apparatus that is not provided with a partition part 4a, a silicon carbide single crystal production apparatus that is provided with a partition part 4a is used. In the case of growing a silicon carbide single crystal, it is considered that the time variation of the temperature of the crucible 5 other than the temperature measurement portion is greatly reduced. As a result, it is considered that temperature fluctuations in the entire crucible 5 can be suppressed.
[Description of Embodiment of the Present Invention]
Hereinafter, embodiments of the present invention will be listed and described.

  (1) The manufacturing apparatus of the silicon carbide single crystal which concerns on 1 aspect of this invention is equipped with the crucible, the 1st resistance heater, the 2nd resistance heater, and the 1st partition part. The crucible has a top surface, a bottom surface opposite to the top surface, and a cylindrical side surface located between the top surface and the bottom surface. The first resistance heater is provided to face the bottom surface. The second resistance heater is configured to surround the side surface. The 1st partition part is provided so that at least one part of the radiated light from a 2nd resistance heater may reach | attain a 1st resistance heater. The 1st partition part is located outside the part of the side which a 2nd resistance heater faces. Thereby, the time fluctuation of the temperature of the crucible can be suppressed.

  (2) Preferably, in the silicon carbide single crystal manufacturing apparatus according to (1), the first partition portion is provided so as to protrude from the side surface to the outside of the crucible. Thereby, a 1st partition part can be provided by a simple method.

  (3) Preferably, in the silicon carbide single crystal manufacturing apparatus according to (2), the first partition portion is provided so as to protrude from the entire periphery of the side surface to the outside of the crucible. Thereby, heat conduction between the first resistance heater and the second resistance heater can be suppressed in the entire periphery.

  (4) In the silicon carbide single crystal manufacturing apparatus according to any one of (1) to (3), preferably, when viewed along a direction parallel to the bottom surface, the width of the first resistance heater is the inside of the crucible. It is larger than the width of the space. Thereby, the in-plane uniformity of the temperature of the bottom surface of the crucible can be improved.

  (5) Preferably, in the silicon carbide single crystal manufacturing apparatus according to any one of (1) to (4), the second resistance heater is a first surface located on a top surface side in a direction from the top surface to the bottom surface. And a second surface located on the bottom side. When viewed along a direction perpendicular to the bottom surface, the first partition portion overlaps a part of the second surface. Thereby, the heat conduction between the first resistance heater and the second resistance heater can be further suppressed.

  (6) Preferably, in the silicon carbide single crystal manufacturing apparatus according to any one of (1) to (5), the second resistance heater has a third surface facing the side surface and a side opposite to the third surface. And a fourth surface. When viewed from the inner space of the crucible, the fourth surface of the second resistance heater is positioned more distally than the outer end of the first partition in the direction parallel to the bottom surface, and the outer end of the first partition Is located distal to the outer end of the first resistance heater. Thereby, the heat conduction between the first resistance heater and the second resistance heater can be further suppressed.

  (7) Preferably, the silicon carbide single crystal manufacturing apparatus according to any one of (1) to (6) further includes a third resistance heater provided facing the top surface. Thereby, the temperature of the seed crystal can be controlled with high accuracy.

  (8) Preferably, in the silicon carbide single crystal manufacturing apparatus according to (7), the second partition provided so as to prevent at least a part of the radiated light from the second resistance heater from reaching the third resistance heater. The unit is further provided. The second partition portion is located outside the side portion. Thereby, heat conduction between the second resistance heater and the third resistance heater can be suppressed.

  (9) In the silicon carbide single crystal manufacturing apparatus according to (8), preferably, the second partition portion is provided so as to protrude from the side surface to the outside of the crucible. Thereby, a 2nd partition part can be provided by a simple method.

  (10) Preferably, in the silicon carbide single crystal manufacturing apparatus according to (9), the second partition portion is provided so as to protrude from the entire periphery of the side surface to the outside of the crucible. Thereby, heat conduction between the second resistance heater and the third resistance heater can be suppressed in the entire periphery.

  (11) Preferably, in the silicon carbide single crystal manufacturing apparatus according to any one of (1) to (10), the silicon carbide single crystal is configured to be manufactured by a sublimation method. Thereby, the uniformity of the crystal quality of the silicon carbide single crystal manufactured by the sublimation method can be improved.

  (12) A silicon carbide single crystal manufacturing apparatus according to an aspect of the present invention is a silicon carbide single crystal manufacturing apparatus by a sublimation method, wherein a crucible, a first resistance heater, a second resistance heater, and a third A resistance heater, a 1st partition part, and a 2nd partition part are provided. The crucible has a top surface, a bottom surface opposite to the top surface, and a cylindrical side surface located between the top surface and the bottom surface. The first resistance heater is provided to face the bottom surface. The second resistance heater is configured to surround the side surface. The third resistance heater is provided facing the top surface. The second resistance heater includes a first surface located on the top surface side, a second surface located on the bottom surface side, a third surface facing the side surface, and a third surface in a direction from the top surface to the bottom surface. And the fourth surface on the opposite side. The first partition portion is located on the second surface side and is provided so as to protrude from the entire periphery of the side surface to the outside of the crucible. The second partition portion is located on the first surface side and is provided so as to protrude from the entire periphery of the side surface to the outside of the crucible. When viewed from the inner space of the crucible, the fourth surface of the second resistance heater is located distal to the outer end of at least one of the first partition portion and the second partition portion in a direction parallel to the bottom surface, and At least one outer end is located distal to the outer end of the first resistance heater. Thereby, the time fluctuation of the temperature of the crucible can be further suppressed.

(13) The manufacturing method of the manufacturing apparatus of the silicon carbide single crystal which concerns on 1 aspect of this invention is equipped with the following processes. A crucible having a top surface, a bottom surface opposite to the top surface, and a cylindrical side surface located between the top surface and the bottom surface, a first resistance heater provided facing the bottom surface, and surrounding the side surface The second resistance heater configured as described above, the partition located outside the side portion facing the second resistance heater, the raw material provided inside the crucible, and the raw material facing the inside of the crucible And the seed crystal provided are prepared. A silicon carbide single crystal is grown on the seed crystal by sublimating the raw material. In the step of growing the silicon carbide single crystal, the bottom surface and the first resistance heater of the first resistance heater are provided in a state where the partition portion is provided so as to prevent at least a part of the radiated light from the second resistance heater from reaching the first resistance heater. The power supplied to the first resistance heater is determined based on at least one of the temperatures, and the power supplied to the second resistance heater is determined based on the temperature of at least one of the side surface and the second resistance heater. Thereby, the time fluctuation of the temperature of the crucible can be suppressed.
[Details of the embodiment of the present invention]
The configuration of silicon carbide single crystal manufacturing apparatus 100 according to an embodiment of the present invention will be described.

  As shown in FIG. 1, silicon carbide single crystal manufacturing apparatus 100 according to the present embodiment is an apparatus for manufacturing a silicon carbide single crystal by a sublimation method, and includes crucible 5 and first resistance heater 1. The second resistance heater 2, the third resistance heater 3, the first partition 4a, the second partition 4b, the chamber 6, the lower radiation thermometer 9a, the side radiation thermometer 9b, It mainly has a radiation thermometer 9c. The crucible 5 has a top surface 5a1, a bottom surface 5b2 opposite to the top surface 5a1, and a cylindrical side surface 5b1 located between the top surface 5a1 and the bottom surface 5b2. Side surface 5b1 has, for example, a cylindrical shape. The crucible 5 includes a pedestal 5 a configured to hold the seed crystal 11 and a storage portion 5 b configured to store the silicon carbide raw material 12. The pedestal 5a has a seed crystal holding surface 5a2 in contact with the back surface 11a of the seed crystal 11, and a top surface 5a1 opposite to the seed crystal holding surface 5a2. The pedestal 5a constitutes the top surface 5a1. The accommodating part 5b comprises the bottom face 5b2. The side surface 5b1 is composed of a pedestal 5a and an accommodating portion 5b. In the crucible 5, the silicon carbide raw material 12 is sublimated and recrystallized on the surface 11 b of the seed crystal 11, whereby a silicon carbide single crystal grows on the surface 11 b of the seed crystal 11. That is, the silicon carbide single crystal is configured to be manufactured by a sublimation method.

  The first resistance heater 1 is provided to face the bottom surface 5 b 2 of the crucible 5. The first resistance heater 1 is separated from the bottom surface 5b2. The first resistance heater 1 has an upper surface 1a facing the bottom surface 5b2 and a lower surface 1b opposite to the upper surface 1a. The second resistance heater 2 is configured to surround the side surface 5b1. The second resistance heater 2 is separated from the side surface 5b1. The second resistance heater faces the first surface 2a located on the top surface 5a1 side of the crucible 5, the second surface 2b located on the bottom surface 5b2 side, and the side surface 5b1 in the direction from the top surface 5a1 to the bottom surface 5b2. It includes a third surface 2c and a fourth surface 2d opposite to the third surface 2c. Preferably, the second surface 2b of the second resistance heater 2 is located between the bottom surface 5b2 and the top surface 5a1 in the direction from the top surface 5a1 to the bottom surface 5b2. The third resistance heater 3 is provided to face the top surface 5a1. The third resistance heater 3 is separated from the top surface 5a1.

  The lower radiation thermometer 9a is provided outside the chamber 6 at a position facing the bottom surface 5b2 of the crucible 5, and is configured to be able to measure the temperature of the bottom surface 5b2 through the window 6a. The lower radiation thermometer 9a may be provided at a position facing the first resistance heater 1, and may be configured to be able to measure the temperature of the first resistance heater 1. The side radiation thermometer 9b is provided at a position facing the side surface 5b1 outside the chamber 6, and is configured to be able to measure the temperature of the side surface 5b1 through the window 6b. The side radiation thermometer 9b may be provided at a position facing the second resistance heater 2, and may be configured to measure the temperature of the second resistance heater 2. The upper radiation thermometer 9c is provided at a position facing the top surface 5a1 outside the chamber 6, and is configured to be able to measure the temperature of the top surface 5a1 through the window 6c. The upper radiation thermometer 9c may be provided at a position facing the third resistance heater 3, and may be configured to be able to measure the temperature of the third resistance heater 3.

  As the radiation thermometers 9a, 9b, 9c, for example, a pyrometer (model number: IR-CAH8TN6) manufactured by Chino Co., Ltd. can be used. The measurement wavelength of the pyrometer is, for example, 1.55 μm and 0.9 μm. The emissivity setting value of the pyrometer is, for example, 0.9. The distance coefficient of the pyrometer is 300, for example. The measurement diameter of the pyrometer is obtained by dividing the measurement distance by the distance coefficient. For example, when the measurement distance is 900 mm, the measurement diameter is 3 mm.

  As shown in FIGS. 1 and 2, the second resistance heater 2 includes a first portion 1x extending along the direction from the top surface 5a1 to the bottom surface 5b2 of the crucible 5, and the first portion 1x on the bottom surface 5b2 side. And a second portion 2x extending along the circumferential direction of the side surface 5b1 of the crucible 5, and a second portion 2x provided continuously, and in a direction from the bottom surface 5b2 toward the top surface 5a1. A third portion 3x extending along the top surface 5a1 and a fourth portion 4x provided continuously with the third portion 3x on the top surface 5a1 side and extending along the circumferential direction of the side surface 5b1. The first part 1x, the second part 2x, the third part 3x, and the fourth part 4x constitute the heater unit 10x. The second resistance heater 2 is formed in an annular shape by continuously providing a plurality of heater units 10x.

  As shown in FIG. 3, when viewed along the direction from the top surface 5a1 to the bottom surface 5b2, the second resistance heater 2 is provided so as to surround the side surface 5b1 and has an annular shape. A set of electrodes 7 is provided in contact with the fourth surface 2 d of the second resistance heater 2. When viewed along a direction perpendicular to the top surface 5a1, the pair of electrodes 7 and the top surface 5a1 may be provided on a straight line. A second power source 7 a is connected to the set of electrodes 7. The second power source 7 a is configured to be able to supply power to the second resistance heater 2. Preferably, the 2nd resistance heater 2 comprises a parallel circuit.

  As shown in FIG. 4, when viewed along the direction from the top surface 5 a 1 to the bottom surface 5 b 2, the first resistance heater 1 has a shape in which two curves moving away from the center merge at the center. Preferably, the first resistance heater 1 has a Fermat spiral shape. A set of electrodes 8 is connected to both ends of the first resistance heater 1. A first power supply 8 a is connected to the set of electrodes 8. The first power supply 8 a is configured to be able to supply power to the first resistance heater 1. When viewed along a direction parallel to the bottom surface 5b2, the width W1 of the first resistance heater 1 is larger than the width W2 inside the crucible 5 (see FIG. 1), and preferably is larger than the width of the bottom surface 5b2. large. The width W1 of the first resistance heater 1 is measured so as not to include the electrode 8.

  As shown in FIG. 5, when viewed along the direction from the top surface 5 a 1 to the bottom surface 5 b 2, the third resistance heater 3 has a shape in which two curves that move away from the center merge at the center. Preferably, the third resistance heater 3 has a Fermat spiral shape. A pair of electrodes 14 is connected to both ends of the third resistance heater 3. A third power source 14 a is connected to the set of electrodes 14. The third power source 14 a is configured to be able to supply power to the third resistance heater 3. When viewed along a direction parallel to the top surface 5a1 of the crucible 5, the width of the third resistance heater 3 is smaller than the width of the top surface 5a1. The width of the third resistance heater 3 is measured so as not to include the electrode 14.

  As shown in FIG. 1, the first partition 4 a is provided so as to prevent at least a part of the radiated light from the second resistance heater 2 from reaching the first resistance heater 1. Similarly, the first partition 4 a is provided so as to prevent at least a part of the radiated light from the first resistance heater 1 from reaching the second resistance heater 2. The 1st partition part 4a is provided so that at least one part of the radiation light directly irradiated toward the 1st resistance heater 1 from the 2nd resistance heater 2 may be interrupted | blocked. That is, the first partition 4 a is provided between the second resistance heater 2 and the first resistance heater 1 so as to suppress the heat of the second resistance heater 2 from being transmitted to the first resistance heater 1. It has been.

  The 1st partition part 4a is located outside the part 5c of the side surface 5b1 of the crucible 5 which the 2nd resistance heater 2 faces. The first partition 4a may be formed integrally with the crucible 5 or may be a separate body. Preferably, the first partition 4a includes a surface 4a1 in contact with the side surface 5b1, an outer end 4a2 opposite to the surface 4a1, a top surface 4a3 on the top surface 5a1 side of the crucible 5, and a bottom surface on the bottom surface 5b2 side of the crucible 5. 4a4. Preferably, the first partition portion is in contact with the side surface 5b1 of the accommodating portion 5b of the crucible 5, and is provided so as to protrude from the side surface 5b1 to the outside of the crucible 5. Preferably, the lower surface 4 a 4 of the first partition portion 4 a faces the upper surface 1 a of the first resistance heater 1. Preferably, the upper surface 4a3 of the first partition part 4a faces the second surface 2b of the second resistance heater 2. That is, the first partition 4 a is located on the second surface 2 b side of the second resistance heater 2. Preferably, when viewed along a direction perpendicular to the bottom surface 5 b 2, the first partition 4 a overlaps a part of the top surface 1 a of the first resistance heater 1. Preferably, when viewed along a direction perpendicular to the bottom surface 5 b 2, the first partition 4 a overlaps a part of the second surface 2 b of the second resistance heater 2.

  Preferably, when viewed from the inner space of the crucible 5, the fourth surface 2 d of the second resistance heater 2 is distal to the outer end portion 4 a 2 of the first partition portion 4 a in a direction parallel to the bottom surface 5 b 2 of the crucible 5. The outer end 4a2 of the first partition 4a is positioned more distally than the outer end 1c of the first resistance heater 1. In other words, the distance a3 from the central axis 0 of the cylindrical side surface 5b1 to the fourth surface 2d of the second resistance heater 2 is larger than the distance a2 from the central axis 0 to the outer end 4a2 of the first partition 4a. The distance a2 from the central axis 0 to the outer end 4a2 of the first partition 4a is larger than the distance a1 from the central axis 0 to the outer end 1c of the first resistance heater 1.

  As shown in FIG. 6, the first partition 4 a is preferably provided so as to protrude from the entire periphery of the side surface 5 b 1 of the crucible 5 to the outside of the crucible 5. When viewed along the direction from the top surface 5 a 1 toward the bottom surface 5 b 2, the first partition 4 a is provided so as to surround the housing 5 b of the crucible 5. When viewed along the direction from the top surface 5a1 to the bottom surface 5b2, the first partition portion 4a has a ring shape. The 1st partition part 4a may be formed so that it may protrude outside the crucible 5 from a part of circumference | surroundings of the side surface 5b1.

  Note that each of the crucible 5, the first resistance heater 1, the second resistance heater 2, the third resistance heater 3, the first partition portion 4a, and the second partition portion 4b is made of, for example, carbon, preferably made of graphite. It is configured. Each of the electrodes 7, 8, and 14 may be made of, for example, carbon (preferably graphite), or may be made of a metal such as copper.

  Next, the structure of the 1st modification of the manufacturing apparatus 100 of the silicon carbide single crystal which concerns on this Embodiment is demonstrated.

  As shown in FIG. 7, the first partition portion 4 a of the silicon carbide single crystal manufacturing apparatus 100 may be provided apart from the side surface 5 b 1 of the crucible 5. The 1st partition part 4a should just be provided so that at least one part of the radiated light from the 2nd resistance heater 2 may reach | attain the 1st resistance heater 1, and does not need to contact the side surface 5b1. The 1st partition part 4a may be provided so that the surface 4a1 of the 1st partition part 4a may face the side surface 5b1. The first partition 4a may be separated from the entire periphery of the side surface 5b1 or may be in contact with a part of the entire periphery.

  Next, the structure of the 2nd modification of the manufacturing apparatus 100 of the silicon carbide single crystal which concerns on this Embodiment is demonstrated.

  As shown in FIG. 8, silicon carbide single crystal manufacturing apparatus 100 may further include a second partition portion 4b. The second partition portion 4 b is provided so as to prevent at least a part of the radiation light from the second resistance heater 2 from reaching the third resistance heater 3. Similarly, the second partition portion 4 b is provided so as to prevent at least a part of the radiation light from the third resistance heater 3 from reaching the second resistance heater 2. The 2nd partition part 4b is provided so that at least one part of the radiation light irradiated directly toward the 3rd resistance heater 3 from the 2nd resistance heater 2 may be interrupted | blocked. That is, the second partition portion 4 b is provided between the second resistance heater 2 and the third resistance heater 3 so as to suppress the heat of the second resistance heater 2 from being transmitted to the third resistance heater 3. ing.

  The 2nd partition part 4b is located in the outer side rather than the part 5c of the side surface 5b1 of the crucible 5 which the 2nd resistance heater 2 faces. The second partition 4b may be formed integrally with the crucible 5 or may be a separate body. Preferably, the second partition 4b includes a surface 4b1 in contact with the side surface 5b1, an outer end 4b2 opposite to the surface 4b1, an upper surface 4b3 on the top surface 5a1 side of the crucible 5, and a lower surface on the bottom surface 5b2 side of the crucible 5. 4b4. Preferably, the second partition portion 4b is in contact with the side surface 5b1 of the pedestal 5a of the crucible 5, and is provided so as to protrude from the side surface 5b1 to the outside of the crucible 5. Preferably, the lower surface 4b4 of the second partition portion 4b faces the first surface 2a of the second resistance heater 2. That is, the second partition portion 4 b is located on the first surface 2 a side of the second resistance heater 2. Preferably, when viewed along a direction perpendicular to the bottom surface 5 b 2, the second partition portion 4 b overlaps a part of the first surface 2 a of the second resistance heater 2.

  Preferably, when viewed from the inner space of the crucible 5, the fourth surface 2d of the second resistance heater 2 is distal to the outer end portion 4b2 of the second partition portion 4b in a direction parallel to the bottom surface 5b2 of the crucible 5. The outer end 4b2 of the second partition portion 4b is located farther from the outer end 1c of the first resistance heater 1. Preferably, when viewed from the inner space of the crucible 5, in the direction parallel to the bottom surface 5b2, the fourth surface 2d of the second resistance heater 2 is an outer end portion of at least one of the first partition portion 4a and the second partition portion 4b. And at least one outer end portion is located more distally than the outer end portion 1 c of the first resistance heater 1.

  As shown in FIG. 9, the second partition portion 4 b is preferably provided so as to protrude from the entire periphery of the side surface 5 b 1 of the base 5 a of the crucible 5 to the outside of the crucible 5. When viewed along the direction from the top surface 5 a 1 to the bottom surface 5 b 2, the second partition 4 b is provided so as to surround the base 5 a of the crucible 5. When viewed along the direction from the top surface 5a1 to the bottom surface 5b2, the second partition portion 4b has a ring shape. The second partition portion 4b may be formed so as to protrude from the part of the periphery of the side surface 5b1 of the crucible 5 to the outside of the crucible 5. Only one of the first partition portion 4a and the second partition portion 4b may be provided so as to protrude from the entire periphery of the side surface 5b1 to the outside of the crucible 5, or the first partition portion 4a and the second partition portion 4b. Both of them may be provided so as to protrude from the entire periphery of the side surface 5b1 to the outside of the crucible 5.

  Next, the structure of the 3rd modification of the manufacturing apparatus 100 of the silicon carbide single crystal which concerns on this Embodiment is demonstrated.

  As shown in FIG. 10, in the direction parallel to the top surface 5a1 of the crucible 5, the outer end portion 4b2 of the second partition 4b is located outside the fourth surface 2d of the second resistance heater 2. Also good. In other words, when viewed from the internal space of the crucible 5, the outer end portion 4b2 of the second partition portion 4b is located distal to the fourth surface 2d of the second resistance heater 2 in a direction parallel to the top surface 5a1. And you may be located more distally than the outer side edge part 4a2 of the 1st partition part 4a.

  Next, the structure of the 4th modification of the manufacturing apparatus 100 of the silicon carbide single crystal which concerns on this Embodiment is demonstrated.

  As shown in FIG. 11, in the direction parallel to the top surface 5 a 1 of the crucible 5, the outer end 4 a 2 of the first partition portion 4 a is located outside the fourth surface 2 d of the second resistance heater 2. Also good. In other words, when viewed from the internal space of the crucible 5, the outer end portion 4a2 of the first partition portion 4a is located distal to the fourth surface 2d of the second resistance heater 2 in a direction parallel to the top surface 5a1. And you may be located more distally than the outer side edge part 4b2 of the 2nd partition part 4b.

  Next, the structure of the 5th modification of the manufacturing apparatus 100 of the silicon carbide single crystal which concerns on this Embodiment is demonstrated.

  As shown in FIG. 12, the second partition portion 4 b may protrude upward from the top surface 5 a 1 of the crucible 5. The second partition 4b may be in contact with the top surface 5a1 instead of the side surface 5b1 of the crucible 5. The 2nd partition part 4b may be formed integrally with the base 5a, and may be formed separately. The second partition portion 4 b is provided to face the third resistance heater 3. The second partition portion 4 b may have a cylindrical shape so as to surround the third resistance heater 3.

Next, a method for manufacturing a silicon carbide single crystal according to an embodiment of the present invention will be described.
First, the process (S10: FIG. 13) which prepares the manufacturing apparatus of a silicon carbide single crystal is implemented. For example, the above-described silicon carbide single crystal manufacturing apparatus 100 is prepared. Thus, the crucible 5 having the top surface 5a1, the bottom surface 5b2 opposite to the top surface 5a1, and the cylindrical side surface 5b1 positioned between the top surface 5a1 and the bottom surface 5b2, and the bottom surface 5b2 are provided. The first resistance heater 1, the second resistance heater 2 configured to surround the side surface 5b1, and the partition portion 4a located outside the portion 5c of the side surface 5b1 that the second resistance heater 2 faces. Is prepared (see FIG. 1).

  Next, a step of preparing a silicon carbide raw material and a seed crystal (S20: FIG. 13) is performed. Specifically, as shown in FIG. 14, seed crystal 11 and silicon carbide source material 12 are arranged inside crucible 5. Silicon carbide raw material 12 is provided in housing portion 5 b of crucible 5. Silicon carbide raw material 12 is, for example, a powder of polycrystalline silicon carbide. The seed crystal 11 is fixed to the seed crystal holding surface 5a2 of the pedestal 5a using, for example, an adhesive. The seed crystal 11 is, for example, a polytype 4H hexagonal silicon carbide substrate. The seed crystal 11 has a back surface 11a fixed to the seed crystal holding surface 5a2 of the base 5a, and a surface 11b opposite to the back surface 11a. The diameter of the surface 11b of the seed crystal 11 is, for example, 100 mm or more, preferably 150 mm or more. The surface 11b of the seed crystal 11 is a surface that is off, for example, about 8 ° or less from the {0001} plane. Seed crystal 11 is arranged such that surface 11 b of seed crystal 11 faces surface 12 a of silicon carbide raw material 12. As described above, the raw material 12 provided inside the crucible 5 and the seed crystal 11 provided facing the raw material 12 inside the crucible 5 are prepared.

  Next, a step of growing a silicon carbide single crystal (S30: FIG. 13) is performed. Specifically, the crucible 5 is heated using the first resistance heater 1, the second resistance heater 2, and the third resistance heater 3. As shown in FIG. 16, crucible 5 that was at temperature A2 at time T0 is heated to temperature A1 at time T1. The temperature A2 is, for example, room temperature. The temperature A1 is, for example, a temperature of 2000 ° C. or higher and 2400 ° C. or lower. Both silicon carbide raw material 12 and seed crystal 11 are heated so that the temperature decreases from bottom surface 5b2 of crucible 5 toward top surface 5a1. From time T1 to time T6, the crucible 5 is maintained at the temperature A1. As shown in FIG. 17, the inside of the chamber 6 is maintained at the pressure P1 from time T0 to time T2. The pressure P1 is, for example, atmospheric pressure. The atmospheric gas in the chamber 6 is an inert gas such as argon gas, helium gas, or nitrogen gas.

  At time T2, the pressure in the chamber 6 is reduced from the pressure P1 to the pressure P2. The pressure P2 is, for example, not less than 0.5 kPa and not more than 2 kPa. From time T3 to time T4, the pressure in the chamber 6 is maintained at the pressure P2. Between time T2 and time T3, silicon carbide raw material 12 begins to sublime. The sublimated silicon carbide is recrystallized on the surface 11 b of the seed crystal 11. From time T3 to time T4, the inside of the chamber 6 is maintained at the pressure P2. From time T3 to time T4, silicon carbide source material 12 continues to sublime, and silicon carbide single crystal 20 (see FIG. 15) grows on surface 11b of seed crystal 11.

  In the step of growing the silicon carbide single crystal, the silicon carbide raw material 12 is maintained at a temperature at which silicon carbide sublimes, and the seed crystal 11 is maintained at a temperature at which silicon carbide is recrystallized. Specifically, the temperature of each of silicon carbide raw material 12 and seed crystal 11 is controlled as follows, for example. The temperature of the bottom surface 5b2 of the crucible 5 is measured using the lower radiation thermometer 9a. As shown in FIG. 18, the temperature of the bottom surface 5b2 measured by the lower radiation thermometer 9a is sent to the control unit. In the control unit, the temperature of the bottom surface 5b2 is compared with a desired temperature. When the temperature of the bottom surface 5b2 is higher than the desired temperature, for example, the first power supply 8a (see FIG. 4) is instructed to reduce the power supplied to the first resistance heater 1. On the other hand, when the temperature of the bottom surface 5b2 is lower than the desired temperature, for example, the first power supply 8a (see FIG. 4) is instructed to increase the power supplied to the first resistance heater 1. That is, the 1st power supply 8a supplies electric power with respect to the 1st resistance heater 1 based on the instruction | command from a control part. As described above, the power supplied to the first resistance heater 1 is determined based on the temperature of the bottom surface 5b2 measured by the lower radiation thermometer 9a, whereby the temperature of the bottom surface 5b2 is controlled to a desired temperature. . Alternatively, the electric power supplied to the first resistance heater 1 is determined based on the temperature of the first resistance heater 1 measured by the lower radiation thermometer 9a, thereby controlling the temperature of the bottom surface 5b2 to a desired temperature. May be. Furthermore, the temperature of the bottom surface 5b2 may be controlled to a desired temperature by determining the power supplied to the first resistance heater 1 based on the temperature of both the first resistance heater 1 and the bottom surface 5b2.

  Similarly, the power supplied to the second resistance heater 2 is determined based on the temperature of the side surface 5b1 of the crucible 5 measured by the side radiation thermometer 9b, so that the temperature of the side surface 5b1 is controlled to a desired temperature. Is done. Alternatively, the power supplied to the second resistance heater 2 is determined based on the temperature of the second resistance heater 2 measured by the side radiation thermometer 9b, so that the temperature of the side surface 5b1 becomes a desired temperature. It may be controlled. Furthermore, the temperature of the side surface 5b1 may be controlled to a desired temperature by determining the power supplied to the second resistance heater 2 based on the temperature of both the second resistance heater 2 and the side surface 5b1.

  Similarly, the power supplied to the third resistance heater 3 is determined based on the temperature of the top surface 5a1 of the crucible 5 measured by the upper radiation thermometer 9c, so that the temperature of the top surface 5a1 becomes a desired temperature. Be controlled. Alternatively, the power supplied to the third resistance heater 3 is determined based on the temperature of the third resistance heater 3 measured by the upper radiation thermometer 9c, so that the temperature of the top surface 5a1 becomes a desired temperature. It may be controlled. Furthermore, the temperature of the top surface 5a1 may be controlled to a desired temperature by determining the power supplied to the third resistance heater 3 based on the temperature of both the third resistance heater 3 and the top surface 5a1. .

  As shown in FIG. 15, the partition portion 4 a is provided so as to prevent at least a part of the radiation light 13 from the second resistance heater 2 from reaching the first resistance heater 1. Preferably, the 1st partition part 4a is provided so that all the radiant lights irradiated directly toward the 1st resistance heater 1 from the 2nd resistance heater 2 may be interrupted | blocked. That is, in the step of growing the silicon carbide single crystal 20, in a state where the partition portion 4a is provided so as to prevent at least a part of the radiation 13 from the second resistance heater 2 from reaching the first resistance heater 1, The power supplied to the first resistance heater 1 is determined based on the temperature of at least one of the bottom surface 5b2 of the crucible 5 and the first resistance heater 1, and at least one of the side surface 5b1 of the crucible 5 and the second resistance heater 2 The electric power supplied to the second resistance heater 2 is determined based on the temperature. Preferably, in the step of growing silicon carbide single crystal 20, in a state in which partition portion 4 a is provided so as to prevent at least part of radiation light 13 from second resistance heater 2 from reaching first resistance heater 1. The electric power supplied to the third resistance heater 3 is determined based on the temperature of at least one of the top surface 5a1 of the crucible 5 and the third resistance heater 3.

  Next, from time T4 to time T5, the pressure in the chamber 6 increases from the pressure P2 to the pressure P1 (see FIG. 17). As the pressure in the chamber 6 increases, sublimation of the silicon carbide raw material 12 is suppressed. Thereby, the process of growing a silicon carbide single crystal is substantially completed. At time T6, the heating of the crucible 5 is stopped and the crucible 5 is cooled. After the temperature of crucible 5 reaches around room temperature, silicon carbide single crystal 20 is taken out from crucible 5.

  Next, functions and effects of the silicon carbide single crystal manufacturing apparatus and manufacturing method according to the present embodiment will be described.

  Silicon carbide single crystal manufacturing apparatus 100 according to the present embodiment includes crucible 5, first resistance heater 1, second resistance heater 2, third resistance heater 3, first partition 4 a, and second And a partition 4b. The crucible 5 has a top surface 5a1, a bottom surface 5b2 opposite to the top surface 5a1, and a cylindrical side surface 5b1 located between the top surface 5a1 and the bottom surface 5b2. The first resistance heater 1 is provided to face the bottom surface 5b2. The second resistance heater 2 is configured to surround the side surface 5b1. The first partition 4 a is provided so as to prevent at least a part of the radiated light from the second resistance heater 2 from reaching the first resistance heater 1. The 1st partition part 4a is located in the outer side rather than the part 5c of the side surface 5b1 which the 2nd resistance heater 2 faces. Thereby, the time fluctuation of the temperature of the crucible 5 can be suppressed.

  In addition, according to silicon carbide single crystal manufacturing apparatus 100 according to the present embodiment, first partition portion 4 a is provided so as to protrude from side surface 5 b 1 to the outside of crucible 5. Thereby, the 1st partition part 4a can be provided by a simple method.

  Furthermore, according to silicon carbide single crystal manufacturing apparatus 100 according to the present embodiment, first partition portion 4a is provided so as to protrude from the entire periphery of side surface 5b1 to the outside of crucible 5. Thereby, the heat conduction between the 1st resistance heater 1 and the 2nd resistance heater 2 can be suppressed in the perimeter.

  Furthermore, according to silicon carbide single crystal manufacturing apparatus 100 according to the present embodiment, when viewed along a direction parallel to bottom surface 5b2, first resistance heater 1 has a width that is greater than a width W2 of the internal space of crucible 5. Is also big. Thereby, the in-plane uniformity of the temperature of the bottom surface 5b2 of the crucible 5 can be improved.

  Furthermore, according to silicon carbide single crystal manufacturing apparatus 100 according to the present embodiment, second resistance heater 2 includes first surface 2a positioned on top surface 5a1 side in the direction from top surface 5a1 to bottom surface 5b2, and the bottom surface. And a second surface 2b located on the 5b2 side. When viewed along a direction perpendicular to the bottom surface 5b2, the first partition 4a overlaps a part of the second surface 2b. Thereby, the heat conduction between the first resistance heater 1 and the second resistance heater 2 can be further suppressed.

  Furthermore, according to silicon carbide single crystal manufacturing apparatus 100 according to the present embodiment, second resistance heater 2 includes third surface 2c facing side surface 5b1 and fourth surface 2d opposite to third surface 2c. And have. The fourth surface 2d of the second resistance heater 2 is located distal to the outer end 4a2 of the first partition portion 4a in the direction parallel to the bottom surface 5b2 when viewed from the internal space of the crucible 5, and the first The outer end 4a2 of the partition 4a is located more distally than the outer end 1c of the first resistance heater 1. Thereby, the heat conduction between the first resistance heater 1 and the second resistance heater 2 can be further suppressed.

  Furthermore, according to the silicon carbide single crystal manufacturing apparatus 100 according to the present embodiment, the second resistance heater 2 is provided so as to prevent at least a part of the radiated light from the second resistance heater 2 from reaching the third resistance heater 3. It further has a partition part 4b. The 2nd partition part 4b is located in the outer side rather than the part 5c of the side surface 5b1. Thereby, heat conduction between the second resistance heater 2 and the third resistance heater 3 can be suppressed.

  Furthermore, silicon carbide single crystal manufacturing apparatus 100 according to the present embodiment further includes third resistance heater 3 provided to face top surface 5a1. Thereby, the temperature of the seed crystal 11 can be accurately controlled.

  Furthermore, according to silicon carbide single crystal manufacturing apparatus 100 according to the present embodiment, second partition portion 4b is provided so as to protrude from side surface 5b1 to the outside of crucible 5. Thereby, the 2nd partition part 4b can be provided by a simple method.

  Furthermore, according to silicon carbide single crystal manufacturing apparatus 100 according to the present embodiment, second partition portion 4 b is provided so as to protrude from the entire periphery of side surface 5 b 1 to the outside of crucible 5. Thereby, the heat conduction between the 2nd resistance heater 2 and the 3rd resistance heater 3 can be suppressed in the perimeter.

  Furthermore, according to silicon carbide single crystal manufacturing apparatus 100 according to the present embodiment, silicon carbide single crystal 20 is configured to be manufactured by a sublimation method. Thereby, the uniformity of the crystal quality of the silicon carbide single crystal 20 manufactured by the sublimation method can be improved.

  Silicon carbide single crystal manufacturing apparatus 100 according to the present embodiment is a silicon carbide single crystal 20 manufacturing apparatus by a sublimation method, and includes crucible 5, first resistance heater 1, second resistance heater 2, It has a three-resistance heater 3, a first partition 4a, and a second partition 4b. The crucible 5 has a top surface 5a1, a bottom surface 5b2 opposite to the top surface 5a1, and a cylindrical side surface 5b1 located between the top surface 5a1 and the bottom surface 5b2. The first resistance heater 1 is provided to face the bottom surface 5b2. The second resistance heater 2 is configured to surround the side surface 5b1. The third resistance heater 3 is provided to face the top surface 5a1. The second resistance heater 2 includes a first surface 2a located on the top surface 5a1 side, a second surface 2b located on the bottom surface 5b2 side, and a third surface facing the side surface 5b1 in the direction from the top surface 5a1 to the bottom surface 5b2. It includes a surface 2c and a fourth surface 2d opposite to the third surface 2c. The 1st partition part 4a is located in the 2nd surface 2b side, and is provided so that it may protrude outside the crucible 5 from the perimeter of the side surface 5b1. The 2nd partition part 4b is located in the 1st surface 2a side, and is provided so that it may protrude outside the crucible 5 from the perimeter of the side surface 5b1. In the direction parallel to the bottom surface 5b2 when viewed from the internal space of the crucible 5, the fourth surface 2d of the second resistance heater 2 is farther from the outer end of at least one of the first partition portion 4a and the second partition portion 4b. And at least one outer end portion is located more distally than the outer end portion 1 c of the first resistance heater 1. Thereby, the time fluctuation of the temperature of the crucible 5 can be further suppressed.

  According to the method for manufacturing a silicon carbide single crystal according to the present embodiment, top surface 5a1, bottom surface 5b2 opposite to top surface 5a1, and cylindrical side surface 5b1 located between top surface 5a1 and bottom surface 5b2 are provided. A first resistance heater 1 provided to face the bottom surface 5b2, a second resistance heater 2 configured to surround the side surface 5b1, and a side surface 5b1 to which the second resistance heater 2 faces. A partition 4a located outside the portion 5c, a raw material 12 provided inside the crucible 5, and a seed crystal 11 provided facing the raw material 12 inside the crucible 5 are prepared. Silicon carbide single crystal 20 is grown on seed crystal 11 by sublimating raw material 12. In the step of growing the silicon carbide single crystal 20, the bottom surface 5b2 and the bottom surface 5b2 The electric power supplied to the first resistance heater 1 is determined based on at least one temperature of the first resistance heater 1, and the second resistance heater 2 is determined based on the temperature of at least one of the side surface 5b1 and the second resistance heater 2. The power to be supplied to is determined. Thereby, the time fluctuation of the temperature of the crucible 5 can be suppressed.

  The embodiment disclosed this time is to be considered as illustrative in all points and not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

0 Central axis 1 First resistance heater 1a, 4a3, 4b3 Upper surface 1b, 4a4, 4b4 Lower surface 1c, 4a2, 4b2 Outer end 2 Second resistance heater 2a First surface 2b Second surface 2c Third surface 2d Fourth surface 3 3rd resistance heater 4a1, 4b1 surface 4a 1st partition part (partition part)
4b 2nd partition part 5 Crucible 5a1 Top surface 5a2 Seed crystal holding surface 5a Base 5b2 Bottom surface 5b1 Side surface 5b Housing part 5c Part 6 Chamber 6a, 6b, 6c Window 7, 8, 14 Electrode 7a Second power supply 8a First power supply 9a Radiation Thermometer (lower radiation thermometer)
9b Side radiation thermometer 9c Upper radiation thermometer 11 Seed crystal 11a Back surface 11b, 12a Front surface 12 Raw material (silicon carbide raw material)
13 Radiant light 14a Third power supply 20 Silicon carbide single crystal 100 Manufacturing apparatus A1, A2 Temperature P1, P2 Pressure T0, T1, T2, T3, T4, T5, T6, t1, t2, t3, t4 Time W1, W2 Width a1 , A2, a3 distance

Claims (13)

A crucible having a top surface, a bottom surface opposite to the top surface, and a cylindrical side surface located between the top surface and the bottom surface;
A first resistance heater provided facing the bottom surface;
A second resistance heater configured to surround the side surface;
A first partition provided to prevent at least a part of the radiation from the second resistance heater from reaching the first resistance heater;
The said 1st partition part is a manufacturing apparatus of the silicon carbide single crystal located outside the part of the said side surface which the said 2nd resistance heater faces.   The said 1st partition part is a manufacturing apparatus of the silicon carbide single crystal of Claim 1 provided so that it may protrude outside the said crucible from the said side surface.   The said 1st partition part is a manufacturing apparatus of the silicon carbide single crystal of Claim 2 provided so that it may protrude outside the said crucible from the perimeter of the said side surface.   4. The silicon carbide according to claim 1, wherein a width of the first resistance heater is larger than a width of an internal space of the crucible when viewed along a direction parallel to the bottom surface. 5. Single crystal manufacturing equipment. The second resistance heater has a first surface located on the top surface side in a direction from the top surface toward the bottom surface, and a second surface located on the bottom surface side,
The carbonization according to any one of claims 1 to 4, wherein the first partition portion overlaps a part of the second surface when viewed along a direction perpendicular to the bottom surface. Silicon single crystal manufacturing equipment. The second resistance heater has a third surface facing the side surface, and a fourth surface opposite to the third surface,
When viewed from the inner space of the crucible, the fourth surface of the second resistance heater is located distal to the outer end of the first partition portion in a direction parallel to the bottom surface, and the first 6. The apparatus for producing a silicon carbide single crystal according to claim 1, wherein an outer end portion of the partition portion is located distal to an outer end portion of the first resistance heater.   The apparatus for producing a silicon carbide single crystal according to any one of claims 1 to 6, further comprising a third resistance heater provided to face the top surface. A second partition provided to prevent at least a part of the radiation from the second resistance heater from reaching the third resistance heater;
The said 2nd partition part is a manufacturing apparatus of the silicon carbide single crystal of Claim 7 located outside the said part of the said side surface.   The said 2nd partition part is a manufacturing apparatus of the silicon carbide single crystal of Claim 8 provided so that it may protrude outside the said crucible from the said side surface.   The said 2nd partition part is a manufacturing apparatus of the silicon carbide single crystal of Claim 9 provided so that it may protrude outside the said crucible from the perimeter of the said side surface.   The said silicon carbide single crystal is a manufacturing apparatus of the silicon carbide single crystal of any one of Claims 1-10 comprised so that manufacture by the sublimation method was possible. An apparatus for producing a silicon carbide single crystal by a sublimation method,
A crucible having a top surface, a bottom surface opposite to the top surface, and a cylindrical side surface located between the top surface and the bottom surface;
A first resistance heater provided facing the bottom surface;
A second resistance heater configured to surround the side surface;
A third resistance heater provided facing the top surface;
The second resistance heater includes a first surface located on the top surface side, a second surface located on the bottom surface side, and a third surface facing the side surface in a direction from the top surface toward the bottom surface. , A fourth surface opposite to the third surface, and
A first partition portion located on the second surface side and provided so as to protrude from the entire periphery of the side surface to the outside of the crucible;
A second partition portion located on the first surface side and provided so as to protrude from the entire periphery of the side surface to the outside of the crucible,
When viewed from the internal space of the crucible, the fourth surface of the second resistance heater is farther from the outer end of at least one of the first partition portion and the second partition portion in a direction parallel to the bottom surface. An apparatus for producing a silicon carbide single crystal, wherein the at least one outer end portion is located distal to the outer end portion of the first resistance heater. A crucible having a top surface, a bottom surface opposite to the top surface, and a cylindrical side surface located between the top surface and the bottom surface;
A first resistance heater provided facing the bottom surface;
A second resistance heater configured to surround the side surface;
A partition located outside the portion of the side surface that the second resistance heater faces;
Raw materials provided inside the crucible;
Preparing a seed crystal provided facing the raw material inside the crucible;
A step of growing a silicon carbide single crystal on the seed crystal by sublimating the raw material,
In the step of growing the silicon carbide single crystal,
The temperature of at least one of the bottom surface and the first resistance heater in a state where the partition portion is provided so as to prevent at least a part of the radiation light from the second resistance heater from reaching the first resistance heater. The power supplied to the first resistance heater is determined based on the temperature, and the power supplied to the second resistance heater is determined based on the temperature of at least one of the side surface and the second resistance heater. A method for producing a single crystal.

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