JP2015032598A - Light-emitting element, light-emitting device, and method of manufacturing light-emitting element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a light-emitting element using a silicon substrate which has excellent electric characteristics and reliability by achieving both good adhesion property and ohmic contact property with the silicon substrate, and by guaranteeing to prevent diffusion into the silicon substrate of a material used for bonding between the silicon substrate and a semiconductor layer, and the like, and which also has a good productivity and is low-cost.SOLUTION: A light-emitting element comprises: an Si substrate; a first metal layer provided on one surface of the Si substrate; a second metal layer provided on the other surface of the Si substrate; and a semiconductor layer provided on the second metal layer. At least one of the first and second metal layers is a metal laminate in which a layer containing Co, a layer containing Mo, W, Ti, TiN, TiW, Rh, Ru, Pd, or Ir, and a layer containing Au, are sequentially laminated from the Si substrate side.

Description

  The present invention relates to a light-emitting element having a specific metal layer using a Si substrate, a light-emitting device using the light-emitting element, and a method for manufacturing the light-emitting element.

  Conventionally, as a highly efficient light emitting device using a GaN-based semiconductor layer, a wafer in which a semiconductor layer having a light emitting layer is grown on a growth substrate such as a sapphire substrate is used at about 300 ° C. using a solder material such as AuSn. A light emitting element (bonding element) is known which is formed by peeling a growth substrate from a semiconductor layer after bonding to a Si substrate (supporting substrate) by heating and pressurizing.

  This light-emitting element has a structure in which a first metal layer (bonding layer) formed on a Si substrate and a semiconductor layer are bonded by an AuSn material, and is electrically connected to the outside on the back surface of the Si substrate. A second metal layer (back metallization layer) is formed as an electrode for this purpose. Such a back metallized layer is required to have good adhesion to the Si substrate and to be made of a metal material that is in ohmic contact with Si in order to energize the Si substrate.

  In addition, the bonding layer has a paintability to AuSn in order to bond the light emitting element well, and in order to obtain a stable ohmic contact, a solder material such as Au or Sn is passed through the bonding layer to the Si substrate side. It is required to have a barrier property so as not to diffuse.

  Moreover, about this light emitting element (bonding element), it is desirable that the film thickness of Si substrate is as thin as about 100-200 micrometers from viewpoints, such as the waste heat property of die | dye, mounting property, and size reduction of a package. However, a thin Si substrate may break due to thermal stress when it is bonded to a semiconductor layer, or may be greatly warped, thereby hindering subsequent processes.

  Therefore, the thickness of the Si substrate when bonded to the Si substrate is increased to suppress cracking and warping, and the Si substrate is polished and thinned from the back surface before making the wafer into chips. In such a case, it is necessary to form a back surface metallized layer on the polished Si substrate surface, but the back surface metallized layer formed here satisfies the above requirements immediately after film formation or at a very low temperature, that is, in close contact with the Si substrate. It is desirable to make ohmic contact. This is because when the heat treatment is performed at a high temperature, the thinned Si substrate is cracked or peeled off due to remelting of the AuSn solder joint.

  Therefore, in Patent Document 1, for example, a first metal layer made of an alloy containing silicon and at least one selected from Ti, W, Co, and Ni formed in discrete island shapes in contact with a silicon substrate; A semiconductor element having a configuration of a metal electrode having a second metal layer containing a platinum group metal formed to contact the silicon substrate exposed from between the islands of the first metal layer so as to cover the first metal layer Has been proposed. Good adhesion to the silicon substrate is provided by the first metal layer, and good ohmic contact with silicon is achieved by the second metal layer.

  Further, in Patent Document 2, in a semiconductor light emitting device using an ohmic contact junction electrode, in order to solve the problem that the ohmic contact junction electrode is oxidized and the ohmic contact cannot be maintained in the manufacturing process, platinum or platinum is formed on the ohmic contact metal layer. A technique has been proposed in which an anti-oxidation metal layer such as gold is provided. In the example of the document, the ohmic contact junction electrode is configured, and on the surface of the silicon substrate that is the conductive support substrate, the titanium layer that is the ohmic contact metal layer and the platinum layer that is the diffusion barrier layer. , And a gold layer as a bonding layer is provided.

JP 2009-10359 A JP 2008-283096 A

  Regarding the above-described prior art, the technique of Patent Document 1 requires severe process control because it is necessary to form the first metal layer in an island shape. For this reason, if the first metal layer cannot be formed in an island shape and the silicon substrate surface is covered, the second metal layer containing the platinum group metal cannot contact the silicon substrate, so that ohmic contact cannot be maintained. .

  Also in the technique of Patent Document 2, since a plurality of ohmic contact junction electrodes are formed in a columnar shape, the process control is severe. Further, although a platinum layer is provided on the silicon substrate as a diffusion prevention barrier layer, platinum has a very high material cost.

  In addition, these conventional techniques also have a problem of improving adhesion with a silicon substrate and further electrical characteristics.

  The present invention has been made in view of the above problems, and in a light-emitting element using a silicon substrate, the silicon substrate and the good adhesion and ohmic contact are compatible, and the silicon substrate and the semiconductor layer are bonded together. An object is to provide a light-emitting element that is excellent in electrical characteristics and reliability, has good productivity, and is inexpensive by ensuring prevention of diffusion of a material used to the silicon substrate side.

  As a result of intensive studies to solve the above problems, the inventor has developed a specific metal layer excellent in adhesion with a silicon substrate, a specific low-cost barrier layer and a semiconductor layer that prevent diffusion of the above materials, etc. In order to complete the present invention, it is found that by using a metal laminate having a specific bonding layer that can be used for bonding, a light-emitting element having excellent electrical characteristics and reliability, good productivity, and low cost can be obtained. It was.

  That is, the light emitting device according to the present invention includes a Si substrate, a first metal layer provided on one surface of the Si substrate, a second metal layer provided on the other surface of the Si substrate, and the second metal layer. A light-emitting element including a semiconductor layer provided on a metal layer, wherein at least one of the first metal layer and the second metal layer includes, from the Si substrate side, a layer containing Co, Mo, W, The light-emitting element is a metal laminate in which a layer containing Ti, TiN, TiW, Rh, Ru, Pd, or Ir and a layer containing Au are sequentially stacked.

  The light-emitting element according to the present invention includes, for example, a step A of forming a semiconductor layer by crystal growth on a growth substrate to obtain a semiconductor layer, a layer containing Co on at least one surface of the Si substrate, Mo , W, Ti, TiN, TiW, Rh, Ru, Pd or a layer containing Au and a layer containing Au in this order to obtain a metal laminated Si substrate, and the semiconductor obtained in the step A It can manufacture by implementing the process C which bonds a layer and the metal lamination | stacking Si substrate obtained at the said process B through Au.

  According to the present invention, in a light emitting device using a silicon substrate, the silicon substrate side such as a material that is compatible with the silicon substrate and has good adhesion and ohmic contact and is used for bonding the silicon substrate and the semiconductor layer. By assuring prevention of diffusion into the light-emitting element, an inexpensive light-emitting element having excellent electrical characteristics and reliability, good productivity, and low cost is provided.

It is a schematic diagram which shows the light emitting element of this invention. It is the schematic diagram which showed the part of the laminated structure of Si substrate and a metal laminated body. 3 is a schematic diagram showing a portion of a laminated structure of a second metal layer 16 and a semiconductor layer 18. FIG. It is a schematic diagram which shows the preferable aspect 1 in the specific aspect of the light emitting element of this invention. It is a schematic diagram which shows the preferable aspect 2 in the specific aspect of the light emitting element of this invention. It is a schematic diagram explaining the process A in the manufacturing method of a light emitting element. It is a schematic diagram explaining the process B and C in the manufacturing method of a light emitting element. FIG. 6 is a schematic diagram illustrating a process of a method for manufacturing a light emitting element according to aspect 2. FIG. 6 is a schematic diagram illustrating a process of a method for manufacturing a light emitting element according to aspect 2. FIG. 6 is a schematic diagram illustrating a process of a method for manufacturing a light emitting element according to aspect 2. It is a schematic diagram which shows an example of a structure of the light-emitting device of this invention. It is a figure which shows the evaluation result of the tape test in Example 1 and Comparative Example 1. It is a figure which shows the evaluation result of the heat test in Example 2 and Comparative Example 2. It is a figure which shows the result of the electrical property evaluation in Example 3 and Comparative Example 3.

  Hereinafter, a light-emitting element, a method for manufacturing the element, and a light-emitting device of the present invention will be described in detail with reference to the drawings. Specific examples will be shown as needed, but these are examples for embodying the technical idea of the present invention, and the present invention is not limited to them. In addition, the dimensions, materials, shapes, relative arrangements, and the like of the component parts described below are not intended to limit the scope of the present invention only to specific examples unless otherwise specifically described. Absent.

  Further, in this specification, the term “upper” as used on a layer or the like is not necessarily limited to the case where the upper surface is formed in contact with the upper surface, but includes the case where the upper surface is separated from the upper surface. It is used to include the case where there is an intervening layer between them.

[Light emitting element]
Hereinafter, the light emitting device of the present invention will be described with reference to FIG. FIG. 1 is a schematic diagram showing an essential configuration of a light emitting device of the present invention. The light-emitting element 10 of the present invention includes a Si substrate 12, a first metal layer 14 provided on one main surface thereof, a second metal layer 16 provided on the other main surface of the Si substrate 12, And a semiconductor layer 18 provided on the second metal layer 16, and at least one of the first metal layer 14 and the second metal layer 16 is a specific metal laminate. Other required components of the light emitting element such as an electrode and a protective film are formed in the portion denoted by reference numeral 20. In addition, as described in a specific mode of the light-emitting element to be described later, the portion denoted by reference numeral 20 and the semiconductor layer 18 may not necessarily have a flat stacked structure of two layers.

[Si substrate]
In the present invention, the Si substrate 12 is used as a support substrate for the light emitting element 10. The Si substrate 12 has a resistivity of 0.02 Ω · cm or less, is excellent in conductivity, is inexpensive and easily formed into a chip, and has been widely used in the past. The thickness of the Si substrate 12 is not particularly limited, but is usually 50 to 400 μm, preferably 100 to 200 μm, from the viewpoints of chip heat dissipation, mountability, and package miniaturization.

[Metal laminate]
In the light emitting device 10 of the present invention, the first metal layer 14 is provided on one surface (for example, the lower side in the stacking direction) of the Si substrate 12 and the other surface (for example, the upper side in the stacking direction). A second metal layer 16 is provided. The first metal layer 14 serves to join the Si substrate 12 and the base when the light emitting device 10 of the present invention is mounted on the base when the light emitting device 10 is used as a light emitting device package. The second metal layer 16 serves to join the Si substrate 12 and the semiconductor layer 18.

  In the present invention, at least one of the first metal layer 14 and the second metal layer 16 includes a layer containing Co, Mo, W, Ti, TiN, TiW, Rh, Ru, Pd from the Si substrate 12 side. Or it is a metal laminated body by which the layer containing Ir and the layer containing Au are laminated | stacked in order.

  FIG. 2 is a schematic view showing a portion of the laminated structure of the Si substrate and the metal laminate, and the metal laminate will be described below with reference to FIG. In the metal laminate, the Co-containing layer (first layer 22) is laminated on the Si substrate 12. The layer 22 has good adhesion to the Si substrate 12 and can ensure ohmic contact. Due to the presence of the first layer 22, the Si substrate 12 and the semiconductor layer 18 (when the second metal layer 16 is a metal laminate), or the Si substrate 12 and the base when the light emitting device package is formed (first 1 metal layer 14 is a metal laminate), it is strongly bonded. The thickness of the first layer 22 is preferably 5 to 250 nm, more preferably 10 to 250 nm, from the viewpoint of ensuring sufficient adhesion and ohmic contact and from the viewpoint of cost.

  A layer (second layer 24) containing Mo, W, Ti, TiN, TiW, Rh, Ru, Pd or Ir is laminated on the first layer 22. The layer 24 containing at least one of these substances has an excellent barrier property, and when the Si substrate 12 is bonded to the semiconductor layer 18 or the base, the constituent material of the semiconductor layer 18 or the base-side member, or bonding It is possible to prevent the material from diffusing to the Si substrate 12 side. Thereby, ohmic contact with the Si substrate 12 is ensured. These materials are less expensive than Pt used in Patent Document 2, but have sufficient barrier performance. Among the metals, Mo is particularly preferable from the viewpoint of the balance between barrier performance and cost. The thickness of the second layer 24 is preferably 50 to 250 nm, more preferably 75 to 250 nm, from the viewpoint of securing sufficient barrier properties and cost.

  Further, a layer containing Au (third layer 26) is laminated on the second layer 24. Au is excellent in paintability with Au, AuSn, and the like, and can be suitably used for joining the Si substrate 12 and the semiconductor layer 18 or the base. As will be described later, in the manufacture of the light emitting device of the present invention, the Si substrate 12 and the semiconductor layer 18 are bonded (bonded) via Au. In this case, for example, the first layer 22 and the second layer are formed on the Si substrate. 24, and further, a layer containing Au is formed on the second layer 24. On the other hand, a layer containing Au is also formed on the semiconductor layer 18, and these two Au-containing layers are in contact with each other. And the semiconductor layer 18 are bonded. As a result, the third layer 26 in the metal laminate is formed. In the third layer 26, the bonding interface between the two Au-containing layers may or may not be confirmed depending on the bonding method. When AuSn is used for bonding, the third layer 26 may contain Sn. The thickness of the third layer 26 is preferably 100 to 1000 nm, and more preferably 300 to 700 nm, from the viewpoint of good bonding property and cost between the Si substrate 12 and the semiconductor layer 18 or the base.

  In the light emitting device 10 of the present invention, at least one of the first metal layer 14 and the second metal layer 16 is the metal laminated body described above, and by this laminated structure, the Si substrate 12 and the semiconductor layer 18 or the base are formed. Good adhesion and ohmic contact are ensured, there is no peeling even in a thermal environment, good reliability is ensured, and the second layer 24 exhibits a sufficient barrier function at low cost and is used for the above-mentioned joining Diffusion of materials or the like to the Si substrate 12 side is satisfactorily suppressed, and ohmic contact is hardly inhibited. Furthermore, the layer containing Co is considered to have good electrical compatibility with the Si substrate, and by adopting such a metal laminate structure in the present invention, compared to the conventional technique represented by Patent Document 1, Current can be efficiently injected onto the Si substrate, and electricity can be efficiently and stably injected into the semiconductor layer thereon. Since it has such an excellent effect, it is preferable that both the first metal layer 14 and the second metal layer 16 are the metal laminate.

In addition, when one of the first metal layer 14 or the second metal layer 16 is the metal laminate, the other layer can be a metal layer having various conventionally known configurations. For example, a known structure for the first metal layer includes a layer containing a metal such as TiSi ₂ , Ti, Ni, Ru, Au, Sn, Al, or a laminated structure thereof. The first metal layer may be formed of a conductive resin material in which a conductive metal filler is dispersed. Further, as a known configuration of the second metal layer, a layer containing a metal such as Al, Al alloy, TiSi, Si, Ti, Ni, Au, Sn, Pd, Rh, Ru, In, or a laminated structure thereof can be cited.

[Semiconductor layer]
In the light emitting device 10 of the present invention, the semiconductor layer 18 is provided on the second metal layer 16. The configuration of the semiconductor layer 18 is not particularly limited, and various configurations employed in conventionally known light emitting elements can be employed.

  FIG. 3 is a schematic view showing a portion of the laminated structure of the second metal layer 16 and the semiconductor layer 18, and the semiconductor layer 18 usually has a second semiconductor layer 28 and a light emitting layer from the second metal layer 16 side. 30 and a first semiconductor layer 32 are sequentially stacked. In general, the second semiconductor layer 28 is p-type, and the first semiconductor layer 32 is n-type. In the light-emitting element 10 of the present invention, the semiconductor layer 18 usually has a pn junction light-emitting structure. In the present invention, the semiconductor layer 18 can also have various light emitting structures such as a pin structure and a MIS structure. The first semiconductor layer 32 side is the light extraction side. The upper part (light extraction side) of the first semiconductor layer 32 may form a flat surface, but may have an uneven shape in order to improve the light extraction rate.

Examples of the material of the semiconductor layer 18 (the first semiconductor layer 32, the light emitting layer 30, and the second semiconductor layer 28) include various semiconductors such as III-V group compound semiconductors and II-VI group compound semiconductors. Is mentioned. Specific examples include nitride-based semiconductor materials such as In _X Al _Y Ga _1-XY N (0 ≦ X, 0 ≦ Y, X + Y ≦ 1), and in particular, InN, AlN, GaN, InGaN, AlGaN, InGaAlN or the like can be used.

[Specific Embodiment of Light-Emitting Element]
The light-emitting device of the present invention includes the first metal layer 14, the Si substrate 12, the second metal layer 16, and the semiconductor layer 18 described above as essential components (at least one of the first and second metal layers is the above-described metal laminate). As the other components, various known ones can be employed.

  For example, a first electrode electrically connected to the first semiconductor layer 32 is provided, and a second electrode electrically connected to the second semiconductor layer 28 is provided. These electrodes are electrically connected to the corresponding electrodes of the base, whereby a light emitting device can be obtained. Various configurations are conventionally known as the configurations of the first electrode and the second electrode, and any of them can be adopted in the present invention, but two preferred embodiments in the present invention will be described below.

<Aspect 1>
In a preferred embodiment of the present invention, as shown in FIG. 4, the first electrode and the second electrode are disposed in an offset manner in a direction orthogonal to the stacking direction of the light emitting element 10 of the present invention. This is because the first electrode 34 and the pair of second electrodes 36 formed with the semiconductor layer 18 interposed therebetween are arranged with central axes that do not coincide with each other so that there is no overlapping region in plan view from the light extraction side. Is. With such an arrangement, current diffusion can be promoted and internal quantum efficiency can be improved. In addition, the current uniformity on the electrode formation surfaces of the first electrode 34 and the second electrode 36 is increased, and the emitted light can be reduced in light unevenness.

  In this embodiment, since the first electrode 34 is on the light extraction side when viewed from the light emitting layer 30, it is preferable that the first electrode 34 is an electrode formed of a material having a high light reflectance or a transparent electrode in order to improve light extraction efficiency. Further, since the second electrode 36 is located on the side opposite to the light extraction side when viewed from the light emitting layer 30, it is preferable to form the second electrode 36 from a material having a high light reflectance. Alternatively, a light reflection layer including a metal material having a light reflectance higher than that of the metal material included in the second metal layer 16 may be provided between the semiconductor layer 18 and the second metal layer 16. The second electrode 36 may constitute at least a part of the light reflecting layer.

In this aspect, the protective film 38 is formed and insulated in the separation region between the adjacent second electrodes 36 and the region outside the pair of second electrodes 36 and above the second metal layer 16. The thickness of the protective film 38 is not particularly limited, and can be appropriately adjusted according to desired characteristics. Specific examples of the protective film 38 include an oxide film, a nitride film, an oxynitride film, and the like containing at least one element selected from the group consisting of Si, Ti, V, Zr, Nb, Hf, Ta, and Al. In particular, SiO ₂ , ZrO ₂ , SiN, SiON, BN, SiC, SiOC, Al ₂ O ₃ , AlN, AlGaN and the like can be mentioned. Further, the protective film 38 may be composed of a single layer film or a laminated film of a single material, or may be composed of a laminated film of different materials. Further, the protective film 38 may be composed of a distributed Bragg reflector (DBR) film.

Specific examples of the first electrode 34 include, for example, Ni, Pt, Pd, Rh, Ru, Os, Ir, Ti, Zr, Hf, V, Nb, Ta, Co, Fe, Mn, Mo, Cr, Examples thereof include metals such as W, La, Cu, Ag, Y, Al, Si, and Au, oxides thereof, and nitrides thereof, and transparent conductive oxides such as ITO, ZnO, and In ₂ O _3. It can be formed by a single-layer film or a laminated film of a metal or alloy containing at least one selected from the group consisting of materials. In the embodiment of FIG. 4, the first electrode 34 is in contact with the semiconductor layer 18 (the first semiconductor layer 32 thereof), so that ohmic contact with the semiconductor layer 18 is taken into consideration and light emitted from the semiconductor layer 18 is emitted. It is preferable to use a reflective material. Specifically, a Ti / Pt / Au stacked structure can be formed from the semiconductor layer 18 side.

  Since the second electrode 36 is on the light reflecting side as described above, it is preferably formed of a material having a high light reflectance. However, the second electrode 36 is laminated in the order of, for example, an adhesion layer / reflection layer through a light-transmitting thin film adhesion layer. A multilayer structure can also be used. Specific materials for forming the second electrode 36 include Rh, Ag, Ni, Au, Ti, Al, Pt, and ITO. A particularly preferable configuration of the second electrode 36 includes a laminated structure such as Ag / Ni / Ti / Pt or ITO / Ag from the semiconductor layer 18 side. Further, when the second electrode 36 is formed in almost the entire region of the semiconductor layer 18 except for the region corresponding to the region where the first electrode 34 is formed as viewed from the light extraction side, the light emitting region for current injection is increased. It is possible and preferable.

  In FIG. 4, when viewed from the light extraction side, the first electrode 34 is disposed in the central portion of the semiconductor layer 18, and the second electrode 36 is disposed on both sides (opposite surfaces thereof). Various modifications are possible, such as arranging the first electrode 34 near the end of the semiconductor layer 18 and arranging the second electrode 36 so as to occupy the opposite end.

  Furthermore, although the aspect of FIG. 4 is a thing which provided uneven | corrugated shape in the upper part (light extraction side) of the semiconductor layer 18 and improved light extraction efficiency, the upper part may be flat. In addition, the details of this aspect are described in, for example, the republished patent WO2009 / 041318.

<Aspect 2>
A preferred embodiment in the present invention includes the embodiment shown in FIG. In this embodiment, the first electrode 42 and the second electrode 44 are disposed between the Si substrate 12 and the semiconductor layer 18, and the semiconductor layer 18 is separated into a plurality of semiconductor blocks (46 A and 46 B) by the groove 40. ing. In each of the plurality of semiconductor blocks, the first electrode 42 is an opening of a protective film 38 inserted into a through hole 422 formed through the second semiconductor layer 28 and the light emitting layer 30 in the semiconductor layer 18. The protrusion 421 is inserted into the protrusion 423 and connected to the first semiconductor layer 32. The second electrode 44 connects the external connection portion 443 and the semiconductor blocks 46A and 46B, is connected to the wiring portion 442 connected to the external connection portion 443, the wiring portion 442, and the semiconductor layer 18. The internal connection portion 441 is connected to the second semiconductor layer 28.

  With such a configuration, since the external connection portion 443 is provided between the bottom portion of the groove portion 40 separating the semiconductor layer 18, that is, between the plurality of semiconductor blocks, current is supplied to the external connection portion 443. Then, the current flows uniformly to each semiconductor block, and the current concentration on some of the semiconductor blocks is alleviated. Further, since the light emitting layer 30 is exposed at the position of the groove portion 40 by separating the semiconductor layer 18 by the groove portion 40, the light emitted from the light emitting layer 30 is also emitted from the groove portion 40, and the light extraction efficiency is increased. Will improve.

Specific examples of the first electrode 42 include, for example, Ni, Pt, Pd, Rh, Ru, Os, Ir, Ti, Zr, Hf, V, Nb, Ta, Co, Fe, Mn, Mo, Cr, It can be formed of metals such as W, La, Cu, Ag, Y, Al, Si, Au, or oxides thereof or nitrides thereof, and also transparent such as ITO, ZnO, In ₂ O ₃ It can be formed of a single layer film or a laminated film of a metal or alloy containing at least one selected from the group consisting of conductive oxides. Further, as shown in FIG. 5, the first electrode 42 is in contact with the first semiconductor layer 32 at the position of the tip, and is adjacent to the semiconductor layer 18 through the protective film 38 at a position below the semiconductor layer 18. Therefore, it is preferable that the ohmic contact with the first semiconductor layer 32 is taken into account, and that the material that reflects the light emitted from the light emitting layer 30 is used to be formed. Specifically, Al or an Al alloy (such as AlCu) is formed. It is preferable to form by using.

The thickness of the protective film 38 is not particularly limited and can be appropriately adjusted according to desired characteristics. Specific examples of the protective film 38 include an oxide film, a nitride film, an oxynitride film, and the like containing at least one element selected from the group consisting of Si, Ti, V, Zr, Nb, Hf, Ta, and Al. in can be configured, in _particular, can be configured _{SiO 2, ZrO 2, SiN,} SiON, BN, SiC, SiOC, Al 2 O 3, AlN, AlGaN and the like. Further, the protective film 38 may be composed of a single layer film or a laminated film of a single material, or may be composed of a laminated film of different materials. Further, the protective film 38 may be composed of a distributed Bragg reflector (DBR) film.

  As described above, the second electrode 44 includes the internal connection portion 441, the wiring portion 442, and the external connection portion 443.

  Since the internal connection portion 441 is located below the light emitting layer 30 when viewed from the light extraction side, it is preferable that the internal connection portion 441 is made of a material having high light reflectance. In consideration of ohmic contact with the semiconductor layer 18, the internal connection portion 441 is preferably made of, for example, Ag, Ni, Ti, Rh, Pt, ITO, or the like. The internal connection portion 441 may be a single layer film or a multilayer laminated film (for example, ITO / Ag).

  In the case where the internal connection portion 441 is formed of a laminated film, Pt / Ti / Ni / Ag, etc., which are laminated in order from the Si substrate 12 side such that the semiconductor layer 18 side is Ag, can be cited. Note that the internal connection portion 441 may have a configuration in which the side surface and the lower side (Si substrate 12 side) are completely covered with another metal-containing layer serving as a cover electrode in order to prevent migration.

  Next, the wiring portion 442 connected to the internal connection portion 441 and connected to the external connection portion 443 is also below the light emitting layer 30 when viewed from the light extraction side, and below the semiconductor layer 18 and above the internal portion. Since it is formed in a region that is not covered by the connection portion 441, it is preferably formed of a material having high light reflectance. For example, the wiring part 442 can be configured to include a material selected from Ag, Pt, Rh, Ti, Al, and an Al alloy.

  Although not shown here, the wiring portion 442 is specifically formed of a plate-like member having an area substantially the same as the bottom area of the semiconductor layer 18, but a portion corresponding to the protruding portion 421. Has an open structure.

  And the external connection part 443 connected with the said wiring part 442 and connected with an external electrode is each arrange | positioned in the groove part 40 between several semiconductor blocks. For this reason, current is uniformly injected into the semiconductor layer 18 from the positions of one end and the other end of the groove 40.

The wiring part 442 and the external connection part 443 of the second electrode 44 are, for example, Ni, Pt, Pd, Rh, Ru, Os, Ir, Ti, Zr, Hf, V, Nb, Ta, Co, Fe, Mn, Mo, It can be formed of a metal such as Cr, W, La, Cu, Ag, Y, Al, Si, Au, or an oxide thereof or a nitride thereof. In addition, ITO, ZnO, In ₂ O _3, etc. It can be formed of a single-layer film or a laminated film of a metal or alloy containing at least one selected from the group consisting of transparent conductive oxides.

  Subsequently, as shown in FIG. 5, the protective film 38 is formed at various necessary portions, and appropriate insulation is performed. As a result, it is possible to prevent short-circuiting of various electrode members in the light-emitting element 10, short-circuiting of current due to dust adhesion, physical damage to the semiconductor layer 18, and the like.

Further, the protective film 38 can function as an insulating member, and at the same time, can function as a light reflecting member for reflecting a part of the light emitted from the light emitting layer 30. For example, a light diffusing material such as TiO _{2 is used} as a resin. It can be comprised from the contained white resin, a distributed Bragg reflector film, or the like. Further, a light-transmitting insulating film such as SiO ₂ that is a light reflecting member can be used as the protective film 38, and light can be reflected at the interface with each member on which the light-transmitting insulating film is formed. . Moreover, the thickness of the protective film 38 is not specifically limited, It can adjust suitably according to a desired characteristic.

The protective film 38 can be formed from various known materials. In addition to the above-described resin, for example, at least one element selected from the group consisting of Si, Ti, V, Zr, Nb, Hf, Ta, and Al is used. An oxide film, a nitride film, an oxynitride film, and the like can be appropriately selected from a formation position and a function to be provided, and in particular, SiO ₂ , ZrO ₂ , SiN, SiON, BN, SiC, SiOC, Al It can be composed of ₂ O ₃ , AlN, AlGaN or the like. Further, the protective film 38 may be composed of a single layer film or a laminated film of a single material, or may be composed of a laminated film of different materials.

  In addition, details of this aspect are described in the specification of Japanese Patent Application No. 2012-234537, which is a patent application filed by the present applicant.

[Method for Manufacturing Light-Emitting Element]
Although the manufacturing method of the light emitting element of this invention will not be restrict | limited especially if it is a method which can implement | achieve the structure of the light emitting element demonstrated above, For example, it can manufacture by implementing each following process AD. In addition, since there exists a place different from process AD about the manufacturing process of the light emitting element in the case of the aspect 2 demonstrated above, it demonstrates collectively after the description part of the following process D. FIG.

<Formation of Semiconductor Layer (Step A)>
A semiconductor layer is formed by crystal growth on the growth substrate. More specifically, as shown in FIG. 6A, the first semiconductor layer 32, the light emitting layer 30, and the second semiconductor layer 28 are formed in this order on the growth substrate 50. The semiconductor layer may be a semiconductor laminate of these three layers, or may have other layers. The growth substrate may be any substrate that can epitaxially grow various semiconductor compounds (especially nitride semiconductors such as GaN-based semiconductors), and the size and thickness of the growth substrate are not particularly limited. As this growth substrate, an insulating substrate such as sapphire or spinel (MgAl ₂ O ₄ ) whose main surface is one of the C-plane, R-plane, and A-plane, silicon carbide (6H, 4H, 3C), Examples include silicon, ZnS, ZnO, Si, and GaAs. A nitride semiconductor substrate such as GaN or AlN can also be used.

  Then, as shown in FIG. 6B, the second electrode 36 is formed on the upper surface of the semiconductor layer 18 (the surface opposite to the light extraction side). The second electrode 36 may be formed on the entire upper surface, or it may not be formed on the upper surface corresponding to the portion where the first electrode 34 is formed, as in the first embodiment of the light emitting device described above. Thus, it may be formed on a part of the upper surface. The second electrode 36 can be formed by a known method such as sputtering or vapor deposition. When the second electrode 36 is formed on a part of the upper surface of the semiconductor layer 18, the protective film 38 is formed on the remaining part.

  Further, as shown in FIG. 6C, an adhesive layer 52 is usually provided on the upper surface of the second electrode 36 (and the protective film 38) for bonding to the metal laminated Si substrate in the step C described later. In order to achieve good adhesion to the metal laminated Si substrate described later, the adhesive layer 52 is preferably formed of a material excellent in paintability with the layer containing Au of the metal laminated Si substrate. For example, Au, Sn, and Sn alloy (for example, AuSn, AgSn, etc.) are mentioned. Among these, Au is particularly preferable from the viewpoint of achieving good adhesion and heat resistance. Further, the adhesive layer 52 may be formed of a multilayer laminated film. In order to ensure better adhesion and ohmic contact, the second metal layer is formed on the Si substrate in the same manner as the first metal layer and the second metal layer. It is good also as a metal laminated body of the layer containing Co, the layer containing specific metals, such as Mo, and the layer containing Au from the electrode 36 side.

<Manufacture of metal laminated Si substrate (process B)>
As step B, the metal laminate described above (the layer denoted by reference numeral 54 in FIG. 7) is formed on at least one surface of the Si substrate to obtain a metal laminate Si substrate. FIG. 7 is a schematic diagram for explaining a process B and a process C described later in the method for manufacturing a light-emitting element of the present invention.

  In step B, specifically, a layer containing Co (first layer) is first laminated on the surface of the Si substrate 12 with a predetermined thickness, and then a layer containing a specific metal such as Mo (first layer) is formed on the first layer. Two layers) are stacked with a predetermined thickness, and a layer containing Au (third layer) is stacked with a predetermined thickness on the second layer. Each layer may be formed by continuous sputtering, or may be formed by a combination of sputtering and vapor deposition, but the first layer is laminated by sputtering to obtain adhesion with the Si substrate 12. Is preferred. In this way, the metal laminated Si substrate 56 is obtained. In the process B, the metal laminate 54 is usually formed on one surface of the Si substrate 12, and after the process C described later, the metal laminate 54 is formed on the other surface of the Si substrate 12.

  In addition, you may form the contact bonding layer (electrically connected with a base) with the base for making it a light-emitting device other than the said metal laminated body 54 on the other surface of the Si substrate 12. In this case, an adhesive layer is formed of a layer containing a metal such as Al, Al alloy, TiSi, Si, Ti, Ni, Pt, Au, Sn, Pd, Rh, Ru, In, or a laminated structure thereof. Can be configured. The thickness of the said adhesive layer is not specifically limited, It can adjust suitably according to desired joining property and electroconductivity.

<Lamination of semiconductor layer and metal laminated Si substrate (Process C)>
As step C, as shown in FIG. 7, the semiconductor layer 18 obtained in the step A and the metal laminated Si substrate 56 obtained in the step B are bonded together via Au. Specifically, for example, a layer 52 containing Au (adhesion layer 52) is formed on the semiconductor layer 18 in the step A as described above, and the semiconductor layer 18 and the metal laminated Si substrate 56 are connected to the respective Au layers. The layers including (in the metal laminated Si substrate 56, the uppermost layer in the metal laminated body 54) are bonded to each other.

  Since the layers containing Au are excellent in paintability, the semiconductor layer 18 and the metal laminated Si substrate 56 are well bonded. This bonding is performed by, for example, room temperature bonding methods such as a method in which the semiconductor layer 18 and the metal laminated Si substrate 56 are heated and bonded, an atomic diffusion bonding method, a hydroxyl group bonding method, and a surface activation bonding method. .

  By this bonding, the second metal layer 16 is formed from the metal laminate 54 and the adhesive layer 52. In the second metal layer 16, it is considered that the junction of the two Au-containing layers can be confirmed. For example, when bonding is performed by an atomic diffusion bonding method, the two Au-containing layers are completely contained. Are considered to be integrated, and the interface between the two cannot be confirmed.

  Further, the bonding can be performed using AuSn solder. Specifically, solder is interposed between the metal laminate 54 and the adhesive layer 52, thereby bonding them together. The surface of the metal laminate 54 in contact with the solder is composed of a layer containing Au, and the surface of the adhesive layer 52 in contact with the solder is preferably composed of a layer containing Au, and these layers have excellent paintability with solder. Also in this case, good adhesion is achieved.

  In addition, since the Au-Au bonding has better heat resistance of the bonded portion compared to the case where AuSn solder is used, the present invention preferably uses a method of bonding layers containing Au without using the solder. Adopted.

  Even in the pasting step, other steps in the manufacture of the light emitting element, and further in the step of forming the light emitting device package, the bottom layer of the metal laminate 54 provided on the Si substrate 12 is heated. A layer containing Co has excellent adhesion, is less likely to be peeled off, and has an ohmic contact. A layer containing a metal such as Mo, which is an intermediate layer of the metal laminate 54, has a layer existing on the upper side of the layer or a bonding process. The material used for the semiconductor layer is prevented from diffusing to the Si substrate 12 side, and these metals are cheaper than Pt, and the layer containing Au, which is the uppermost layer of the metal laminate 54, provides a semiconductor layer. Good adhesion with the adhesive layer 52 on 18 is achieved.

  Since the metal laminate 54 on one surface of the Si substrate 12 is used in the bonding step described above, the lamination of the metal laminate and the formation of the adhesive layer on the opposite surface of the Si substrate 12 are usually performed. This step is performed after step C. Then, the thickness of the Si substrate 12 at the time of bonding is increased to suppress cracks and warpage, and when the subsequent wafer is formed into chips, the Si substrate 12 is thinned by polishing or the like from the back surface. The light-emitting element 10 can be formed by forming the stacked body 54 or an adhesive layer.

<Removal of growth substrate (process D)>
The light emitting device of the present invention can be obtained by carrying out up to step C. In this state, the growth substrate remains on the side opposite to the Si substrate. In the case of a blue LED, it can be used in this state, but when the light emitting element is a UV LED and the growth substrate is a GaN substrate, the growth substrate is removed. In addition, the growth substrate is also removed when a vertical LED having upper and lower electrodes is formed.

  The growth substrate can be removed by a laser lift-off method or grinding. After removing the growth substrate, the exposed surface of the first semiconductor layer is subjected to CMP (Chemical Mechanical Polishing) to expose the first semiconductor layer as a desired film. At this time, the influence of absorption is reduced even in an LED having an emission wavelength in the ultraviolet region by removing a base layer having a high absorptance with respect to light of the light emitting element, for example, a low-temperature grown GaN layer or reducing the film thickness. be able to.

(About aspect 2)
In addition, the manufacturing method of the light emitting element 10 of this invention in the case of the above-mentioned aspect 2 is demonstrated below, referring FIGS. 8 to 10 referred to below are cross-sectional views similar to those of FIG. 5 described above, and each includes two through holes 422, two projecting portions 421 of the first electrode 42, and two opening projecting portions 423 of the protective film 38. Only the illustration is shown and the others are omitted.

  First, as shown in FIG. 8A, the semiconductor layer 18 composed of the first semiconductor layer 32, the light emitting layer 30 and the second semiconductor layer 28 is crystal-grown on the growth substrate 50, and a predetermined region on the second semiconductor layer 28 is obtained. In addition, the internal connection portion 441 of the second electrode 44 is formed by using, for example, sputtering. Next, a protective film 38 is formed between the internal connection portions 441 on the second semiconductor layer 28 by using, for example, sputtering (FIG. 8B). Next, the wiring part 442 is formed in a predetermined region on the internal connection part 441 and the protective film 38 by using, for example, sputtering (FIG. 8C).

  Next, the protective film 38, the second semiconductor layer 28, the light emitting layer 30, and the first semiconductor layer 32 are partially removed by dry etching, for example, to form a plurality of through holes 422 (FIG. 8D). Next, the protective film 38 is formed using, for example, sputtering so as to form the outline of the protruding portion 421 on the wiring portion 442, on the protective film 38, and in the through hole 422 (FIG. 8E). Next, the protective film 38 formed on the bottom of the through hole 422 is removed to a predetermined depth by dry etching, for example, and the first semiconductor layer 32 is exposed (FIG. 8F).

  Next, as shown in FIG. 9A, the first electrode 42 is formed thicker on the protective film 38 and in the through hole 422 by using, for example, sputtering. Next, the first electrode 42 is planarized by polishing such as CMP (FIG. 9B).

  Next, in the same manner as in Steps B and C above, a metal laminated Si substrate 56 is prepared, and the metal laminate 54 is bonded to the adhesive layer 52 formed on the first electrode 42 (FIG. 9 (c). ) To (e)). Next, similarly to the process D, the growth substrate 50 is peeled off by a laser lift-off method (FIG. 9F).

  Next, as shown in FIG. 10A, the central region of the semiconductor layer 18 is etched by, for example, dry etching until the protective film 38 is exposed, thereby forming the groove portion 40, thereby forming the semiconductor layer 18 into a plurality of semiconductor blocks. Separated into 46A and 46B. Further, here, the peripheral region is also etched until the protective film 38 is exposed, and the side surfaces of the semiconductor blocks 46A and 46B are formed in a forward tapered shape.

  In order to improve the light extraction efficiency, the upper surfaces of the respective semiconductor blocks 46A and 46B may be roughened by etching, for example, by wet etching to form uneven portions (FIG. 10B). Next, the protective film 38 formed in the central region is etched by, for example, wet etching to expose the wiring part 442, and the external connection part 443 is formed on the exposed wiring part 442 (FIG. 10C and FIG. d)).

  Next, a protective film 38 is formed on the upper and side surfaces of each of the semiconductor blocks 46A and 46B by using, for example, sputtering (FIG. 10E). Finally, the first metal layer 14 is formed on the lower surface of the Si substrate 12 by using, for example, sputtering (FIG. 10F). Through the above steps, the light-emitting element 10 of the present invention according to aspect 2 can be manufactured.

[Light emitting device]
The light emitting device of the present invention described above is placed on the base 60 of the semiconductor mounting substrate through the first metal layer 14 as shown in FIG. 11, for example, and the first electrode 34 and the second electrode of the light emitting device 10 are placed. 36 is connected to the electrode on the corresponding base 60, so that the first semiconductor layer 32 and the second semiconductor layer 28 in the semiconductor layer 18 are electrically connected to the first electrode and the second electrode in the base 60, respectively. The light emitting device 100 can emit light.

  FIG. 11 shows a typical configuration of the light emitting device of the present invention, which includes leads 62 and 64 each corresponding to a pair of electrodes (second and first electrodes) of the base. A base 60 is provided. In the light emitting element 10 placed on the base 60, the second electrode 36 for external connection formed on the semiconductor layer 18 side of the Si substrate 12 and one lead 62 of the base 60 are connected to the first base 62. One metal layer 14 is electrically connected.

  The first electrode 34 attached to the light emitting element 10 on the first semiconductor layer 32 side is electrically connected to the other lead 64 by a conductive wire 66 or the like.

  Note that in the light emitting device 100 of the present invention, only one light emitting element may be mounted, but two or more light emitting elements may be mounted, and in addition to the light emitting elements, for example, a Zener diode Or may be combined with a protective element such as a capacitor.

  Further, the light emitting device 100 is formed with a substantially concave cup 68 having a side surface, and has a wide opening 70 above. Furthermore, the upper part of the opening 70 of the light emitting device 100 is closed by a lens 72 such as a spherical lens, an aspherical lens, a cylindrical lens, or an elliptical lens.

  The opening 70 is filled with an element covering member 74 that covers the light emitting element 10. As the element covering member 74, it is preferable to use a translucent silicone resin composition, a modified silicone resin composition, etc. in addition to gas. Moreover, the insulating resin composition which has translucency, such as an epoxy resin composition, a modified epoxy resin composition, and an acrylic resin composition, can be used. Furthermore, a resin excellent in weather resistance such as a silicone resin, an epoxy resin, a urea resin, a fluororesin, and a hybrid resin containing at least two of these resins can be used. Moreover, it is not restricted to organic substance, The inorganic substance excellent in light resistance, such as glass and a silica gel, can also be used.

  Further, the element covering member 74 can contain a wavelength conversion member 76 that performs wavelength conversion by absorbing at least a part of the light emitted from the light emitting layer 30. The member is typically a fluorescent material that is excited by the emitted light to emit fluorescence. By including the wavelength conversion member 76, the light of the light source can be converted into light of a different wavelength, and the mixed color light of the light source and the light subjected to wavelength conversion by the wavelength conversion member 76 can be extracted to the outside. Note that one or more fluorescent materials may be contained in the element covering member 74.

  In addition to the wavelength conversion member 76, the element covering member 74 can contain an appropriate member such as a viscosity extender, a pigment, a filler, and a diffusing agent depending on the intended use, thereby having good directivity characteristics. A light emitting device is obtained. Similarly, various colorants can be included as a filter material having a filter effect of cutting unnecessary light from extraneous light and light emitting elements.

  EXAMPLES The present invention will be described below with reference to examples, but these examples do not limit the present invention.

[Example 1 and Comparative Example 1]
As Example 1, a Co layer, a Mo layer, and an Au layer were laminated on a Si substrate by sputtering in this order with a thickness of 250 nm, 250 nm, and 500 nm, respectively.

  As Comparative Example 1, a Mo layer and an Au layer were laminated on a Si substrate by sputtering in this order with a thickness of 250 nm and 500 nm, respectively.

  About the metal laminated Si substrate of Example 1 and Comparative Example 1 obtained as described above, a tape test was performed under the following conditions to evaluate adhesion.

<Evaluation conditions>
The samples of Example 1 and Comparative Example 1 were cut into a square with a side of 1 mm by dicing, and the diced sample (Si substrate side) was directly stuck and fixed on a fixing sheet. Subsequently, after affixing a tape test sheet (a sheet having a lower adhesive strength than the fixing sheet) to the surface on which the metal layer of the sample was formed, the tape test sheet was manually peeled off, and the sample metal It was confirmed whether peeling occurred in the layer.

  The evaluation results are shown in FIG. In the case of the metal-laminated Si substrate of Example 1 (left side), the laminate of the Co layer, the Mo layer, and the Au layer on the Si substrate was not peeled off, and there was a test piece peeled off with the Si substrate. On the other hand, in the metal laminated Si substrate (right side) of Comparative Example 1, at least a part of the laminate of the Mo layer and the Au layer on the Si substrate was peeled off for many test pieces, and the part below the Mo layer was exposed. It was.

[Example 2 and Comparative Example 2]
As Example 2, first, a plurality of ring-shaped photoresists were formed on a Si substrate by photolithography. A Co layer, a Mo layer, and an Au layer including a portion where the photoresist was formed were stacked on the Si substrate in this order by sputtering to a thickness of 250 nm, 250 nm, and 500 nm, respectively. Next, the photoresist was removed by lift-off to produce a metal laminated Si substrate having a plurality of portions where the Si substrate was exposed in a ring shape.

  As Comparative Example 2, a plurality of ring-shaped photoresists are formed on a Si substrate in the same manner as in Example 2, and subsequently, a Co layer and an Au layer are stacked in this order with a thickness of 250 nm and 500 nm, respectively. Then, by removing the photoresist, a metal laminated Si substrate having a plurality of portions where the Si substrate was exposed in a ring shape was produced.

  With respect to the metal laminated Si substrates of Example 2 and Comparative Example 2 obtained as described above, a heat resistance test was performed under the condition of heating at 400 ° C. for 10 minutes, and the heat resistance was evaluated.

  The results are shown in FIG. The left side is the metal laminated Si substrate of Example 2, and the right side is the metal laminated Si substrate of Comparative Example 2. In addition, a ring-shaped portion in both is a portion where the Si substrate is exposed, and the other portion is a portion provided with a Co layer or the like.

  It can be seen that in the metal laminated Si substrate (left side) of Example 2, diffusion of Au by heating is prevented, and no change has occurred in the metal laminated structure of the Co layer, Mo layer, and Au layer. On the other hand, in the metal laminated Si substrate (right side) of Comparative Example 2, irregularities occurred in the portion where the Co layer or the like was initially provided, and the metal laminated portion was discolored as a result of further diffusion of Au into the Co layer.

[Example 3 and Comparative Example 3]
As Example 3, a Co layer, a Mo layer, and an Au layer were stacked on a Si substrate by sputtering in this order with a thickness of 250 nm, 250 nm, and 500 nm, respectively.

  As Comparative Example 3, a Ti layer, a Pt layer, and an Au layer were stacked on a Si substrate by sputtering in this order at a thickness of 3 nm, 200 nm, and 500 nm, respectively.

  The obtained metal laminated Si substrates of Example 3 and Comparative Example 3 were evaluated for electric characteristics (IV characteristics). The results are shown in FIG. In addition, about the metal laminated Si substrate of Example 3, the IV characteristic after heating at predetermined temperature was also evaluated.

  FIG. 14 shows that the metal laminated Si substrate of Example 3 can inject current more efficiently than the metal laminated Si substrate of Comparative Example 3. This is presumably because laminating the Co layer on the Si substrate has better electrical compatibility than forming the Ti layer on the Si substrate.

  Furthermore, it can be seen from the results of FIG. 14 that the metal laminated Si substrate of Example 3 was able to maintain good electrical characteristics even when heated.

DESCRIPTION OF SYMBOLS 10 Light emitting element 12 Si substrate 14 1st metal layer 16 2nd metal layer 18 Semiconductor layer 22 1st layer 24 2nd layer 26 3rd layer 28 2nd semiconductor layer 30 Light emitting layer 32 1st semiconductor layer 34 1st electrode 36 1st Two electrodes 38 Protective film 40 Groove part 42 First electrode 421 Protruding part 422 Through hole 423 Opening projecting part 44 Second electrode 441 Internal connection part 442 Wiring part 443 External connection part 46A, 46B Semiconductor block 50 Growth substrate 52 Adhesive layer 54 Metal stack Body 56 Metal laminated Si substrate 60 Base 62 Lead (corresponds to second electrode of base)
64 lead (corresponds to the first electrode of the base)
66 Conductive Wire 68 Cup 70 Opening 72 Lens 74 Element Covering Member 76 Wavelength Conversion Member 100 Light-Emitting Device

Claims (9)

A Si substrate, a first metal layer provided on one surface of the Si substrate, a second metal layer provided on the other surface of the Si substrate, and a semiconductor layer provided on the second metal layer A light emitting device comprising:
At least one of the first metal layer or the second metal layer includes, from the Si substrate side, a layer containing Co, a layer containing Mo, W, Ti, TiN, TiW, Rh, Ru, Pd, or Ir, The light emitting element which is a metal laminated body by which the layer containing Au is laminated | stacked in order.   The light emitting device according to claim 1, wherein both the first metal layer and the second metal layer are the metal laminate.   The light reflection layer containing the metal material whose light reflectivity is higher than the metal material contained in the second metal layer is provided between the second metal layer and the semiconductor layer. The light emitting element of description.   The light emitting element of Claim 3 whose at least one part of the said light reflection layer is an electrode electrically connected with the said semiconductor layer.   The semiconductor layer includes, from the second metal layer side, a second semiconductor layer containing a III-V or II-VI compound semiconductor, a light emitting layer containing a III-V or II-VI compound semiconductor, and a III- The light emitting element in any one of Claims 1-4 which is a semiconductor laminated body by which the 1st semiconductor layer containing a V group or a II-VI group compound semiconductor is laminated | stacked in order. A light emitting device comprising a base having a first electrode and a second electrode, and a light emitting element placed on the base,
The light-emitting element according to claim 5, wherein the light-emitting element is placed on the base via a first metal layer of the light-emitting element,
The light emitting device, wherein the first electrode is electrically connected to the first semiconductor layer, and the second electrode is electrically connected to the second semiconductor layer.   The light emitting device according to claim 6, wherein the light emitting element is covered with a covering member, and the covering member includes a wavelength conversion member that performs wavelength conversion by absorbing at least a part of light emitted from the light emitting element. . Forming a semiconductor layer by crystal growth on a growth substrate to obtain a semiconductor layer; and
A layer including Co, a layer including Mo, W, Ti, TiN, TiW, Rh, Ru, Pd, or Ir, and a layer including Au are stacked in this order on at least one surface of the Si substrate. Step B for obtaining a Si substrate;
A method for manufacturing a light emitting device, comprising: a step C in which the semiconductor layer obtained in the step A and the metal laminated Si substrate obtained in the step B are bonded together through Au. Forming an Au layer on the semiconductor layer in the step A;
9. The light emitting device according to claim 8, wherein the semiconductor layer and the metal laminated Si substrate are bonded together in the step C so that the Au layer on the semiconductor layer and the Au layer of the metal laminated Si substrate are in contact with each other. Method.