JP2015009241A - Junction structure and manufacturing method of junction structure - Google Patents

Abstract

An object of the present invention is to sufficiently reduce the size of voids in solder. A method of manufacturing a joined structure in which a first joining member and a second joining member are joined by solder is provided on a second joining member having a groove at a predetermined position on a surface thereof. A step of installing solder on the surface of the second joining member including at least a part of the groove, a step of installing the first joining member on the solder, and a step of raising the temperature to a temperature equal to or higher than the melting point of the solder And a step of pressurizing to a pressure higher than the time when the solder melts, and a step of lowering the temperature in the pressurized state. [Selection] Figure 2

Description

  The present invention relates to a joint structure and a method for manufacturing the joint structure.

  Conventionally, a method of joining a semiconductor element as a first joining member and a substrate or a lead frame as a second joining member with solder is known. In this soldering process, when voids (cavities) are formed in the solder, problems such as a decrease in heat dissipation of the semiconductor element and a decrease in solder jointability occur. In order to solve this problem, Patent Document 1 discloses a method of reducing the pressure before melting the solder, pressurizing to a pressure higher than the pressure in the reduced pressure state after melting, and then solidifying the solder in the pressurized state. ing. According to this method, voids can be eliminated or reduced.

JP-A-2005-205418

  However, the method described in Patent Document 1 has a problem that the size of the void cannot be sufficiently reduced because the pressure is difficult to be transmitted to the void, particularly when the size of the semiconductor element is large.

  An object of this invention is to provide the technique which can make the magnitude | size of the void in a solder small enough.

  The manufacturing method of the joining structure by this invention is a manufacturing method of the joining structure which joins the 1st joining member and the 2nd joining member with solder, Comprising: 2nd which has a groove in the predetermined part of the surface A step of placing solder on the surface of the second joining member over the joining member and including at least a part of the groove; a step of placing the first joining member on the solder; A step of raising the temperature to a temperature equal to or higher than the melting point, a step of pressurizing to a pressure higher than the time when the solder melts, and a step of lowering the temperature in the pressurized state.

  According to the present invention, the solder is placed on the surface of the second bonding member having a groove at a predetermined position on the surface and including at least a part of the groove. In the process of raising the temperature above the melting point of the solder and then pressurizing it to a pressure higher than that at which the solder melts, the pressure is easily transmitted to the voids existing in the solder, and the voids can be eliminated or sufficiently reduced. .

FIG. 1 is a perspective view of a semiconductor device. FIG. 2 is a diagram showing the configuration of the semiconductor device which is the junction structure in the first embodiment. FIG. 2A is a cross-sectional view taken along a plane in the vertical direction, and FIG. 2 is a top view, and FIG. 2C is an exploded view of the AA cross section of FIG. 2B. FIG. 3 is a view for explaining an example in which a groove is provided so that a portion connected to the outside of the solder is located at a location avoiding the four corners of the solder, and FIG. 3 (a) is a top view and FIG. ) Is a cross-sectional view taken along the line BB in FIG. FIG. 4 is an enlarged view of the cross section of the groove. FIG. 5A is a diagram illustrating a state in which a void formed in the solder is measured using the void measuring apparatus, and FIG. 5B is a void measurement image captured using the void measuring apparatus. FIG. 6A and 6B are diagrams illustrating a configuration of a semiconductor device that is a bonding structure according to the second embodiment, in which FIG. 6A is a top view, and FIG. 6B is a C— line in FIG. 6B. It is C sectional drawing. FIG. 7 is a diagram showing the relationship between the distance from the center of the semiconductor element and the temperature of the semiconductor element. 8A and 8B are diagrams showing a configuration of a semiconductor device that is a junction structure according to the third embodiment. FIG. 8A is a top view, and FIG. 8B is a shape of a groove provided in an electrode. FIG. 9A and 9B are diagrams showing another configuration of the semiconductor device which is the junction structure in the third embodiment, in which FIG. 9A is a top view and FIG. 9B is a groove provided in the electrode. FIG. FIGS. 10A and 10B are diagrams showing still another configuration of the semiconductor device which is the junction structure according to the third embodiment. FIG. 10A is a top view, and FIG. It is a figure which shows the shape of a groove | channel. 11A and 11B are diagrams showing a configuration of a semiconductor device that is a junction structure according to the fourth embodiment. FIG. 11A is a top view, and FIG. 11B is a shape of a groove provided in an electrode. FIG. 12A and 12B are diagrams illustrating a configuration of a semiconductor device which is a bonded structure according to the fifth embodiment. FIG. 12A is a top view, and FIG. 12B is a diagram D of FIG. -D shows a cross-sectional view. 13A and 13B are diagrams showing a configuration of a semiconductor device which is a junction structure in the sixth embodiment. FIG. 13A is a top view, and FIG. 13B is a view of a groove provided in an electrode. It is a top view which shows a shape.

  FIG. 1 is a perspective view of a semiconductor device 4 which is a joint structure common to the embodiments. The semiconductor device 4 includes a semiconductor element 1 that is a first bonding member bonded to an electrode 3 that is a second bonding member via a solder (brazing material) 2 as a bonding material. This semiconductor device is used, for example, in an inverter mounted on an electric vehicle such as an electric vehicle or a hybrid vehicle. However, the application destination of the semiconductor device is not limited to the inverter mounted on the electric vehicle, and can be applied to various devices.

  Although the semiconductor device 4 shown in FIG. 1 includes a plurality of semiconductor elements 1, hereinafter, a structure in which the semiconductor element 1 and the electrode 3 are joined via the solder 2 is referred to as a semiconductor device.

<First Embodiment>
FIG. 2 is a diagram showing the configuration of the semiconductor device which is the junction structure in the first embodiment. FIG. 2A is a cross-sectional view taken along a plane in the vertical direction, and FIG. 2 is a top view, and FIG. 2C is an exploded view of the AA cross section of FIG. 2B. However, since FIG. 2A shows the state before the pressurizing step in the manufacturing method described later, it can be seen that the void 5 exists inside the solder 2.

  The semiconductor element 1 that is the first bonding member and the electrode 3 that is the second bonding member are bonded via a solder (brazing material) 2 as a bonding material. More specifically, the semiconductor element 1 is joined to the upper part of the electrode 3 via the solder 2.

  For the electrode 3, a metal material having good electrical conductivity and thermal conductivity, such as copper and aluminum, is used, and the solder 2 is subjected to a surface treatment with good wettability. The surface treatment with good wettability with respect to the solder 2 is, for example, nickel plating.

  The electrode 3 is provided with a groove 6 in a region where the semiconductor element 1 is bonded. The groove 6 has a portion 7 connected to the outside of the solder 2 as well as a region to which the semiconductor element 1 is bonded. That is, the groove 6 has a portion 7 where the solder 2 and the semiconductor element 1 do not exist above the groove 6.

  In the example shown in FIG. 2, two straight grooves 6 are provided in the electrode 3, and the end portions of the respective grooves 6 become portions 7 where the solder 2 and the semiconductor element 1 do not exist. Yes.

  The groove 6 is provided so that a portion 7 connected to the outside of the solder 2 is located at a location avoiding the four corners of the solder 2. FIG. 3 is a view for explaining an example in which the groove 6 is provided so that the portion 7 connected to the outside of the solder 2 is located at a location avoiding the four corners of the solder 2, and FIG. FIG.3 (b) is BB sectional drawing of Fig.3 (a). As shown in FIGS. 3A and 3B, the portion 7 connected to the outside of the solder 2 is located at a location where the four corner portions 8 of the solder 2 having a quadrangular shape as viewed from above are avoided. Generally, since the maximum stress strain of the solder 2 is distributed in the four corners 8 when the solder 2 is viewed from the top, the portion 7 connected to the outside of the solder 2 is located at a location avoiding the four corners 8, thereby 6 can prevent the maximum stress strain of the solder 2 from being adversely affected.

  As described above, the electrode 3 is subjected to a surface treatment with good wetting with respect to the solder 2, but the groove 6 is subjected to a treatment so that the solder 2 does not spread out. Specifically, the base metal of the electrode 3 is exposed in the groove 6 without performing a surface treatment with good wettability on the solder 2. Thereby, since the base metal of the electrode 3 exposed in the groove 6 repels the solder 2, it is possible to prevent the molten solder 2 from spreading into the groove 6. FIG. 4 is an enlarged view of a cross section of the groove 6. As shown in FIG. 4, the melted solder 2 does not wet and spread in the groove 6 because the groove 6 is not subjected to surface treatment with good wetting on the solder 2.

  For example, if the groove 6 is formed with a press on a nickel-plated metal plate, the surface of the groove 6 can be nickel-plated. Is peeled off, and the base metal of the electrode 3 can be exposed.

  A method for bonding the semiconductor element 1 on the electrode 3 will be described. First, after placing the solder 2 and the semiconductor element 1 on the electrode 3, the temperature is raised to the melting point of the solder 2 or higher. Subsequently, the atmospheric pressure is increased to a pressure higher than that at the time when the solder 2 is melted. Finally, the solder 2 is solidified by lowering the temperature to below the melting temperature of the solder 2 while maintaining the increased atmospheric pressure.

  In the present embodiment, a groove 6 having a portion 7 connected to the outside of the solder 2 is provided in the lower region of the semiconductor element 1 in the electrode 3. Accordingly, in the bonding step of the semiconductor element 1, when the solder 2 is melted and then the atmospheric pressure is increased to a high pressure, voids existing inside the solder 2, particularly, around the groove 6 are formed. Since the pressure is easily transmitted to the void, the void can be effectively reduced or eliminated even when the size of the semiconductor element 1 is large. In addition, since the pressure is easily transmitted to the void, the size of the void can be reduced in a short time compared to the conventional configuration in which the electrode 6 is not provided with the groove 6.

  Further, the provision of the groove 6 having the portion 7 connected to the outside of the solder 2 makes it easier for the reducing atmosphere to be transmitted when the solder 2 is melted in the joining process of the semiconductor element 1, thereby improving the wettability of the solder 2. Therefore, good solderability can be obtained.

  Further, since the solder 6 is treated so that the solder 2 does not spread out, the thickness variation after the solder 2 is joined can be suppressed. Since the thickness variation of the solder 2 between the semiconductor element 1 and the electrode 3 greatly affects the reliability of the semiconductor device, the groove 6 is not subjected to a surface treatment with good wettability to the solder 2. This is a very effective means.

  In manufacturing the semiconductor device, when the solder 2 or the semiconductor element 1 is automatically mounted on the electrode 3 by a robot, a mark for positioning is provided. However, according to the configuration of this embodiment, the electrode 3 Since the groove 6 provided in can be used instead of a mark for positioning, it is not necessary to separately provide a mark for positioning.

  FIG. 5A is a diagram illustrating a state in which a void formed in the solder 2 is measured using the void measuring device 40, and FIG. 5B is an image captured using the void measuring device 40. It is a figure which shows a void measurement image. FIG. 5C is a diagram of experimental results obtained by examining the relationship between the void ratio and the heat generation temperature of the semiconductor element 1. The void ratio is the ratio of voids existing inside the solder 2.

  In the case of a void formed in the solder 2 at the time of joining the semiconductor element 1, in the case of a circular void, as shown in FIG. 5C, as the diameter increases, the semiconductor element 1 during driving of the semiconductor device 1 The exothermic temperature increases. However, in the case of a linear void, if the width of the void is constant, as shown in FIG. 5C, the heat generation temperature of the semiconductor element 1 becomes the same level regardless of the length.

  As described above, the groove 6 of the electrode 3 is treated so that the solder 2 is not wetted and spread. Therefore, the groove 6 is not filled and joined with the solder 2, and a cavity connected to the outside of the solder 2 can be provided. That is, even if the electrode 3 includes the groove 6 that is not filled with the solder 2, the exothermic temperature of the semiconductor element 1 can be minimized.

  As described above, the manufacturing method of the bonded structure in the first embodiment is a method of bonding the first bonding member (semiconductor element 1) and the second bonding member (electrode 3) with solder, A step of installing solder on the surface of the second bonding member including the groove 6 at a predetermined position and including at least a part of the groove 6; A step of installing one joining member, a step of raising the temperature to a temperature equal to or higher than the melting point of the solder 2, a step of pressurizing to a pressure higher than the time when the solder 2 melts, and a step of lowering the temperature in the pressurized state With. Solder is placed on the surface of the second joining member having the groove 6 at a predetermined position on the surface and including at least a part of the groove 6. It becomes easy to apply pressure to the voids existing inside 2, and the voids can be effectively reduced or eliminated. Further, since the pressure is easily transmitted to the void, the size of the void can be reduced in a short time compared to the conventional configuration in which the groove 6 is not provided in the second bonding member.

  Since a part of the groove provided in the second joining member communicates with the outside of the solder 2 and the first joining member, pressure is easily applied to the void existing inside the solder 2 in the pressurizing step. Thus, voids can be reduced or eliminated more effectively.

  Further, before the step of installing the solder 2 on the second bonding member, the groove 6 provided in the second bonding member is treated so that the solder 2 does not wet and spread. A cavity connected to the outside of the solder 2 without being filled and joined with the solder 2 can be secured. Thereby, in a pressurization process, it becomes easy to apply a pressure to the void which exists in the inside of solder 2, and a void can be reduced or eliminated more effectively. Moreover, since the solder 2 does not get wet and spread into the groove 6, the thickness variation after the solder 2 is joined can be suppressed. Furthermore, as described above, in the case of a linear void, if the width of the void is constant, the heat generation temperature of the semiconductor element 1 as the first bonding member becomes the same level regardless of the length. The heat generation temperature of the semiconductor element 1 is not significantly deteriorated by the groove 6.

  Further, a portion 7 where a part of the groove 6 provided in the second joining member leads to the outside of the solder 2 and the first joining member is provided at a location avoiding the four corners of the solder having a substantially rectangular shape. It has been. Since the maximum stress strain of the solder 2 is generally distributed at the four corners 8 of the solder 2, by avoiding the four corners, voids can be reduced without adversely affecting the maximum stress strain of the solder 2. .

<Second Embodiment>
6A and 6B are diagrams illustrating a configuration of a semiconductor device that is a bonding structure according to the second embodiment. FIG. 6A is a top view, and FIG. 6B is a C- It is C sectional drawing.

  In the second embodiment, the width of the groove 6 provided in the electrode 3 is increased as the distance from the center of the semiconductor element 1 increases.

  FIG. 7 is a diagram showing the relationship between the distance from the center of the semiconductor element 1 and the temperature of the semiconductor element 1. As shown in FIG. 7, when the semiconductor device is driven, the temperature of the central portion of the semiconductor element 1 is highest, and the temperature decreases as the distance from the central portion increases.

  In order to effectively reduce or eliminate the voids present in the solder 2, the width of the groove 6 provided in the electrode 3 may be increased. However, when the width of the groove 6 is increased, the path through which the heat generated in the semiconductor element 1 when the semiconductor device 4 is driven is transferred to the cooling device (not shown) provided below the electrode 3 through the electrode 3 is reduced. There is a possibility that the cooling performance of the semiconductor element 1 is lowered and the temperature of the semiconductor element 1 exceeds the heat resistance temperature.

  In the present embodiment, the width of the groove 6 provided in the electrode 3 is increased as the distance from the center of the semiconductor element 1 increases. As shown in FIG. 7, the temperature of the semiconductor element 1 decreases as the distance from the central portion of the semiconductor element 1 increases, so that the width of the groove 6 increases as the distance from the central portion of the semiconductor element 1 increases. However, the temperature of the semiconductor element 1 does not become higher than the heat resistant temperature.

  If the width of the groove 6 is made too large, the solder 2 may be filled with the weight of the solder 2 by its own weight. However, if the width is up to a predetermined size (for example, 1 to 2 mm), the solder 2 The solder 2 is not filled in the groove 6 by its own weight.

  In the example shown in FIG. 6, only two grooves 6 are provided on the left and right sides between the central portion and the end portion of the semiconductor element 1, but three or more grooves may be provided.

  As described above, according to the second embodiment, the second bonding member (electrode 3) is provided with the plurality of grooves 6 and is far from the center position of the first bonding member (semiconductor element 1). Since the groove has a larger width, it is possible to provide an effective groove 6 for reducing voids while preventing the temperature of the semiconductor element 1 from becoming higher than the heat resistant temperature.

<Third Embodiment>
In the third embodiment, the groove 6 is provided in the electrode 3 so that the position corresponding to the central portion of the semiconductor element 1 in the electrode 3 is surrounded by the groove 6. As described with reference to FIG. 7, the temperature distribution of the semiconductor element 1 has the highest temperature at the center, and the temperature decreases as the distance from the center increases. Therefore, by providing the groove 6 in the electrode 3 so that the position corresponding to the central portion of the semiconductor element 1 is surrounded by the groove 6, the temperature of the central portion of the semiconductor element 1 is prevented from exceeding the heat resistance temperature, By the grooves 6 provided around the part, the voids existing in the central part of the solder 2 and the periphery thereof can be effectively reduced or eliminated.

  8A and 8B are diagrams showing a configuration of a semiconductor device that is a junction structure in the third embodiment. FIG. 8A is a top view and FIG. 8B is a groove 6 provided in the electrode 3. FIG. In the configuration shown in FIG. 8, two grooves 6 extending in the vertical direction of the drawing are arranged in the left and right direction so that the position corresponding to the central portion of the semiconductor element 1 in the electrode 3 is surrounded by the groove 6. Two extending grooves 6 are provided in the electrode 3. The two grooves 6 extending in the vertical direction and the two grooves extending in the left-right direction each have a portion 7 connected to the outside of the solder 2.

  FIGS. 9A and 9B are diagrams showing another configuration of the semiconductor device which is a bonded structure according to the third embodiment. FIG. 9A is a top view, and FIG. It is a figure which shows the shape of the groove | channel 6. In the configuration shown in FIG. 9, similarly to the configuration shown in FIG. 8, two grooves 6 extending in the vertical direction of the drawing and two grooves 6 extending in the horizontal direction are provided in the electrode 3. The overall shape is a ladder shape. That is, each of the two grooves 6 extending in the vertical direction extends to a position where both ends thereof are connected to the outside of the solder 2, but each of the two grooves extending in the left-right direction is a portion connected to the outside of the solder 2. It does not have, and the edge part becomes the position of the groove | channel 6 extended in an up-down direction.

  FIGS. 10A and 10B are diagrams showing still another configuration of the semiconductor device which is a bonded structure according to the third embodiment. FIG. 10A is a top view, and FIG. FIG. In the configuration shown in FIG. 10, a rectangular groove 6 is provided so as to surround a position corresponding to the central portion of the semiconductor element 1 in the electrode 3, and the four-side grooves constituting the rectangle are The four grooves extending to a position connected to the outside of the solder 2 are connected.

  As described above, according to the third embodiment, the groove 6 provided in the second bonding member (electrode 3) is the center position of the first bonding member (semiconductor element 1) among the second bonding members. Since the temperature of the central portion of the first joining member having the highest temperature is prevented from exceeding the heat-resistant temperature, it exists in the central portion of the solder 2 and its periphery. Voids can be effectively reduced or eliminated.

<Fourth Embodiment>
In the fourth embodiment, a groove 6 is provided in the electrode 3 so that a position corresponding to the center portion of the semiconductor element 1 in the electrode 3 is surrounded by a circular groove 6 centered on the position. As described with reference to FIG. 7, the temperature of the semiconductor element 1 exhibits a concentric temperature distribution that is highest at the center and decreases as the distance from the center increases. Therefore, if the circular (ring-shaped) groove 6 centering on the position corresponding to the central portion of the semiconductor element 1 is provided, the temperature of the semiconductor element 1 immediately above the circular groove 6 becomes the same. Design becomes easy.

  11A and 11B are diagrams showing a configuration of a semiconductor device which is a bonded structure according to the fourth embodiment. FIG. 11A is a top view and FIG. 11B is a groove 6 provided in the electrode 3. FIG. In the configuration shown in FIG. 11, a circular groove 6 centering on the position of the electrode 3 so as to surround the position corresponding to the center of the semiconductor element 1 is provided. The four grooves extending to a position connected to the outside of the solder 2 are connected.

  As described above, according to the fourth embodiment, the groove provided in the second bonding member (electrode 3) is the first bonding member (semiconductor element 1) of the second bonding member (electrode 3). Therefore, in addition to the effect obtained by the configuration of the third embodiment, the temperature of the first joining member directly above the circular groove 6 is the same. Therefore, thermal design becomes easy.

<Fifth Embodiment>
12A and 12B are diagrams illustrating a configuration of a semiconductor device which is a bonded structure according to the fifth embodiment. FIG. 12A is a top view, and FIG. 12B is a diagram D of FIG. -D shows a cross-sectional view. FIG. 12C is a top view showing the shape of the groove 6 provided in the electrode 3.

  In 1st-4th embodiment, although the site | part 7 which the groove | channel 6 has connected with the exterior of the solder 2 was a position of the edge part of the groove | channel 6, in 5th Embodiment, the exterior of the solder 2 and The connected portion 7 is a through hole provided immediately below the circular groove 6. That is, the groove 6 provided in the electrode 3 communicates with the lower part of the electrode 3 through the through hole 7 provided immediately below the groove 6. The diameter of the through hole is the same as the width of the circular groove 6.

  In the example shown in FIG. 12, a circular groove 6 having a small radius and a circular groove 6 having a large radius are provided in the electrode 3 with the position corresponding to the central portion of the semiconductor element 1 as the center. The width of the circular groove 6 having a large radius is larger than the width of the circular groove 6 having a small radius. Further, each circular groove 6 is provided with a through hole 7 at a position (see FIG. 12C) corresponding to the positions of numerals 3, 6, 9, and 12 of a circular timepiece.

  According to the configuration of the fifth embodiment, in order to connect the portion 7 connected to the outside of the solder 2 as compared with the configuration of the first to fourth embodiments in which the groove 6 is extended to provide the portion 7 connected to the outside of the solder 2. Therefore, it is not necessary to extend the groove 6. Thereby, when the heat generation temperature of the semiconductor element 1 when the semiconductor device is driven is cooled by the cooling device provided at the lower part of the electrode 3, the cooling effect is provided by the groove for connecting to the portion 7 connected to the outside of the solder 2. Can be prevented and cooling performance can be improved.

  The through-hole provided as the portion 7 connected to the outside of the solder 2 is a mark for positioning when the solder 2 or the semiconductor element 1 is automatically mounted on the electrode 3 by the robot or the semiconductor device when the semiconductor device is manufactured. Can be used as a mark for positioning when assembled to another unit.

  As described above, according to the fifth embodiment, the solder 2 is provided on the surface of the second bonding member (electrode 3) immediately below the groove 6 provided in the second bonding member (electrode 3). Since the through-hole 7 that leads to the surface opposite to the surface that is provided is provided, the heat generation temperature of the semiconductor element 1 when the semiconductor device 4 is driven is cooled by a cooling device provided below the electrode 3. At this time, it is possible to prevent the cooling effect from being reduced by the groove for connecting to the portion 7 connected to the outside of the solder 2 and improve the cooling performance.

<Sixth Embodiment>
13A and 13B are diagrams showing a configuration of a semiconductor device that is a junction structure according to the sixth embodiment. FIG. 13A is a top view, and FIG. 13B is a groove provided in the electrode 3. 6 is a top view showing the shape of FIG.

  In the third embodiment described above, the groove 6 is provided in the electrode 3 so that the position corresponding to the central portion of the semiconductor element 1 is surrounded by the groove 6, but there is an intersection where a plurality of grooves 6 intersect. The cooling performance of the semiconductor element 1 is reduced at the intersections where the plurality of grooves 6 intersect. For this reason, in the sixth embodiment, the groove 6 is provided in the electrode 3 so that the position corresponding to the central portion of the semiconductor element 1 is surrounded by the groove 6 in a state where the plurality of grooves 6 do not intersect.

  In the example shown in FIG. 13, each of the four grooves 6 is provided so as to intersect with two sides of the rectangular semiconductor element 1, and both ends thereof are portions 7 connected to the outside of the solder 2.

  According to the configuration of the sixth embodiment, since the intersection of the grooves 6 is eliminated, when the heat generation temperature of the semiconductor element 1 when the semiconductor device is driven is cooled by the cooling device provided in the lower part of the semiconductor device, Compared with the configuration in which the intersections of the grooves 6 exist, the heat transfer path at the position of the intersections is ensured, so that the voids existing near the center of the semiconductor element 1 can be reduced or eliminated while improving the cooling effect. .

  The present invention is not limited to the embodiment described above. For example, although the first bonding member has been described as the semiconductor element 1, the first bonding member is not limited to the semiconductor element. Similarly, the second bonding member is not limited to the electrode 3.

DESCRIPTION OF SYMBOLS 1 ... Semiconductor element 2 ... Solder 3 ... Electrode 4 ... Semiconductor device 6 ... Groove 7 ... The part where a groove | channel connects with the exterior of solder

Claims (10)

A method for manufacturing a joined structure in which a first joining member and a second joining member are joined by solder,
A step of installing solder on the surface of the second bonding member having a groove at a predetermined position on the surface and including at least a part of the groove;
Installing the first joining member on the solder;
Raising the temperature to a temperature equal to or higher than the melting point of the solder;
Pressurizing to a pressure higher than that at which the solder melts;
Reducing the temperature in the pressurized state;
The manufacturing method of the joining structure characterized by comprising. In the manufacturing method of the junction structure according to claim 1,
A part of the groove provided in the second joining member leads to the outside of the solder and the first joining member. In the manufacturing method of the joining structure according to claim 1 or 2,
Before the step of installing the solder on the second bonding member, the method further comprises a step of applying a treatment that prevents the solder from spreading on the grooves provided in the second bonding member. A method for manufacturing a joined structure. In the manufacturing method of the joining structure according to claim 2,
The part where a part of the groove provided in the second joining member communicates with the outside of the solder and the first joining member is provided at a place avoiding the four corners of the solder having a substantially rectangular shape. The manufacturing method of the junction structure characterized by the above-mentioned. In the manufacturing method of the joining structure according to any one of claims 1 to 4,
The manufacturing method of the joining structure characterized by the groove | channel being provided in the said 2nd joining member, and the width | variety is so large that the distance is far from the center position of the said 1st joining member. In the manufacturing method of the joining structure according to any one of claims 1 to 4,
The groove provided in the second bonding member is provided so as to surround a position corresponding to a center position of the first bonding member among the second bonding members. Manufacturing method of structure. In the manufacturing method of the joined structure according to claim 6,
The groove provided in the second joining member has a circular shape centering on a position corresponding to the center position of the first joining member among the second joining members. Manufacturing method of structure. In the manufacturing method of the joined structure according to claim 7,
Immediately below the groove provided in the second bonding member, a through hole is provided that communicates with the surface of the second bonding member opposite to the surface on which the solder is provided. The manufacturing method of the junction structure characterized by the above-mentioned. In the manufacturing method of the joined structure according to claim 6,
The second joining member is provided with a plurality of grooves so as to surround a position corresponding to the center position of the first joining member, and the plurality of grooves are arranged so as not to cross each other. A manufacturing method of a featured junction structure. A joining structure constituted by joining the first joining member and the second joining member with solder,
A groove is provided on the surface of the second bonding member, and the solder is placed on the surface of the second bonding member including at least a part of the groove.
A junction structure characterized by that.

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