JP2015008245A - Semiconductor module - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a semiconductor module having a cooling function that can effectively cool down a semiconductor device.SOLUTION: In a state where an upper surface of a heat absorption part 111 of a cooling unit 100 is contacted with a rear face of an N-side electrode 9 of a power semiconductor formation part 14 and a waste-heat part 112 is arranged on a fixing waste-heat part 113, a fixture 12 is arranged on a surface of the N-side electrode 9, and the fixture 12 and the fixing waste-heat part 113 are fixed by screwing with a setscrew 29, and thereby, the N-side electrode 9 and the cooling unit 100 are fixed with each other. When the cooling unit 100 is attached to the N-side electrode 9 by the fixture 12, a lower surface of the fixing waste-heat part 113 and a rear face of a rear face copper foil part 5 in the power semiconductor formation part 14 are positioned so as to be formed on the same plane.

Description

  The present invention relates to a semiconductor module having a power semiconductor device therein, and more particularly to its cooling function.

  In recent years, semiconductor devices (Intelligent Power Module: IPM) using switching devices such as IGBTs (Insulated Gate Bipolar Transistors) and power semiconductor devices such as free-wheeling diodes electrically connected in parallel to them have been developed. ing. Hereinafter, the semiconductor device as described above may be simply referred to as “IPM”.

  That is, in a semiconductor module such as IPM, a power semiconductor device such as a switching device such as IGBT and a power semiconductor device such as a freewheeling diode electrically connected to them are housed in one package. ing.

  And in order to cool the semiconductor device in a semiconductor module, the semiconductor module is provided with a cooling function. An example of such a semiconductor module is the semiconductor device disclosed in Patent Document 1.

JP 2006-287112 A

  However, the conventional semiconductor module having a cooling function has a problem in that it cannot sufficiently cool the surface electrode of the semiconductor device, which is relatively difficult to cool.

  The present invention has been made to solve the above-described problems, and an object of the present invention is to obtain a semiconductor module having a cooling function capable of effectively cooling including a surface electrode of a semiconductor device.

  A semiconductor module according to a first aspect of the present invention is a semiconductor module with a cooling function configured by combining a semiconductor forming portion having a power semiconductor device and a cooler, wherein the semiconductor forming portion is on a surface. A base on which the power semiconductor device is disposed, a surface-side main electrode terminal electrically connected to an electrode portion formed on the surface of the semiconductor device, the power semiconductor, the base, and the surface-side main electrode terminal A mold resin portion formed to cover, the back surface of the base body, the front end portion of the front side main electrode terminal is exposed from the mold resin portion, the cooler has a cooling main body portion having a Peltier element, A heat absorption part and an exhaust heat part provided at an upper part and a lower part of the cooling main body part, and an upper surface of the heat absorption part and the tip part of the surface side main electrode terminal are in contact with each other; The cooler in a manner is fixed to the semiconductor forming portion, and a lower surface of the heat exhaust unit on the back surface and the cooler of the substrate in the semiconductor forming portion is being formed on the same plane.

  In the semiconductor module of the present invention according to the first aspect of the present invention, the surface-side main electrode terminal, which is relatively difficult to cool, can be effectively cooled from the tip portion by the cooler. At this time, the cooling main body portion has a Peltier element, and the cooling temperature control corresponding to the applied voltage can be performed on the Peltier element, so that the appropriate cooling control can be performed on the semiconductor device to be cooled.

  In addition, in the semiconductor module of the present invention according to claim 1, the back surface of the base body in the semiconductor forming portion and the bottom surface of the heat exhausting portion in the cooler are formed on the same plane. By using a water-cooling type auxiliary cooling unit that cools from the back surface of the substrate and the lower surface of the exhaust heat unit, efficient cooling can be performed from the back surface of the base and the lower surface of the exhaust heat unit that form the same plane.

  As a result, the exhaust heat part of the Peltier element can be efficiently cooled from the lower surface by the auxiliary cooling part, so that stable cooling control can be performed on the semiconductor device to be cooled by the Peltier element of the cooler.

It is sectional drawing which shows the 1st aspect of the semiconductor module with a cooler which is Embodiment 1 of this invention. It is a top view which shows the 1st aspect of the semiconductor module with a cooler which is Embodiment 1 of this invention. It is sectional drawing which shows the 2nd aspect of the semiconductor module with a cooler which is Embodiment 1 of this invention. It is a circuit diagram which shows the equivalent circuit of the power semiconductor formation part shown in FIG. It is sectional drawing which shows the 1st aspect of the semiconductor module with a cooler which is Embodiment 2 of this invention. It is sectional drawing which shows the 2nd aspect of the semiconductor module with a cooler which is Embodiment 2 of this invention. It is a top view which shows the 2nd aspect of the semiconductor module with a cooler which is Embodiment 2 of this invention. It is sectional drawing which shows the general structure (the 1) of IPM. It is sectional drawing which shows the general structure (the 2) of IPM. It is sectional drawing which shows the general structure (the 3) of IPM.

<Prerequisite technology>
8-10 is sectional drawing which shows the general structure (the 1-the 3) of IPM. Hereinafter, the structure of the conventional IPM will be described with reference to these drawings.

  As shown in FIG. 8, the base body is configured by a laminated structure in which a back copper foil portion 55, an insulating sheet 54, and a base wiring board 53 are formed in this order. The base wiring board 53 is made of a conductive material such as copper, the insulating sheet 54 is made of ceramic, resin, or the like, and a back copper foil portion 55 made of copper foil is provided to protect the insulating sheet 54.

  Then, on the surface of the base wiring board 53, a power semiconductor device 51 such as a switching device such as IGBT and a power semiconductor device 52 such as a freewheeling diode electrically connected in parallel to them are formed. At this time, the back electrodes of the power semiconductor devices 51 and 52 are joined to the surface (on the wiring pattern) of the base wiring board 53 using solder or the like.

  The back electrodes of each of the power semiconductor devices 51 and 52 normally function as electrodes on the P side (collector and cathode side), and pass through the wiring pattern formed on the base wiring board 53 so that the surface of the base wiring board 53 It is electrically connected to a P-side electrode 58 that is joined to a part of the wiring pattern) with solder or the like. The above-mentioned (collector and cathode side) means the collector side of the IGBT formed as the power semiconductor device 51 and the cathode side of the free-wheeling diode formed as the power semiconductor device 52.

  On the other hand, the surface electrodes of the power semiconductor devices 51 and 52 normally function as N-side (emitter and anode side) electrodes, and the N-side electrode 59 is joined to these surface electrodes by solder or the like. , N side electrodes 59 are electrically connected. Both the P-side electrode 58 and the N-side electrode 59 are made of a conductive material such as copper. The above-mentioned (emitter and anode side) means the emitter side of the IGBT formed as the power semiconductor device 51 and the anode side of the free-wheeling diode formed as the power semiconductor device 52, respectively.

  A plurality of third electrode portions including control electrodes (IGBT gates and emitters) of the power semiconductor device 51 and pads such as temperature detection diodes are provided for a plurality of controls via a conductive material 56 such as an aluminum wire for wiring. It is electrically connected to a terminal 57 (in the drawing, one control terminal 57 is shown as a representative). Some control terminals 57 also function as external control terminals of the semiconductor module 64 such as a temperature detection diode.

  A semiconductor module 64 (transfer mold power module: hereinafter simply referred to as “T-PM”) is obtained by forming the mold resin 60 so as to cover these components 51 to 59. Note that the control terminals 57, the tip portions of the P-side electrode 58 and the N-side electrode 59, and the back surface of the back surface copper foil portion 55 are exposed from the mold resin 60.

  Further, as shown in FIG. 9, the T-PM 64 is housed in a case 68 to form a semiconductor module 38. On the surface of the base plate 66 made of copper or the like, the back surface of the T-PM 64 is disposed via the silicon grease 15 for improving the thermal conductivity.

  A pressing plate 67 is provided on the T-PM 64. The holding plate 67 is fixed at a predetermined position in the case 68 when accommodated in the case 68.

  Further, a printed wiring board 69 (printed circuit board: hereinafter may be referred to as “PCB”) on which a drive circuit, a protection circuit, and the like are mounted is provided above the pressing plate 67 via a shield plate 70.

  The control terminal 57 of the T-PM 64 is joined through the through hole of the printed wiring board 69 and by solder or the like.

  Further, the printed wiring board 69 and the shield board 70 are fixed at predetermined positions in the case 68 when accommodated in the case 68. The shield plate 70 is made of aluminum or the like so as to shield the printed wiring board 69 from electromagnetic induction noise caused by steep voltage and current changes.

  Then, the P-side main electrode external terminal 71 made of a conductive material such as copper is inserted into the case 68 from the outside side surface, and is electrically connected to the P-side electrode 58 by welding or the like in the case 68. Connected. Similarly, the N-side main electrode external terminal 72 made of a conductive material such as copper is inserted into the case 68 from the outer side surface and joined to the N-side electrode 59 in the case 68 by welding or the like. Connected. Accordingly, the external terminal 71 and the external terminal 72 are formed to extend from the inside of the case 68 onto the external side surface.

  Thus, the semiconductor module 38 is formed by housing the T-PM 64 in the case 68. That is, a power semiconductor device 51 such as a switching device represented by an IGBT and a power semiconductor device 52 such as a freewheeling diode are electrically connected in parallel to drive the T-PM 64 and a switching device such as an IGBT, A semiconductor module 38 serving as an IPM having a printed wiring board 69 for detecting overcurrent and temperature abnormality is configured.

  Furthermore, as shown in FIG. 10, the semiconductor module 39 is formed by providing an auxiliary cooler 74 on the back side of the T-PM 64. That is, the auxiliary cooler 74 is disposed on the back surface side of the base plate 66 through the silicon grease 73. The auxiliary cooler 74 is made of aluminum or the like, and has a water-cooling cooling function by circulating the refrigerant 75 inside.

  In the semiconductor module 39 having the auxiliary cooler 74 shown in FIG. 10, the heat generated from the power semiconductor devices 51 and 52 inside the T-PM 64 is external from the back copper foil portion 55 provided on the back side of the T-PM 64. Is released. Further, the heat released to the outside of the T-PM 64 is released from the base plate 66 on the case 68 side via the silicon grease 65 to the auxiliary cooler 74 outside the IPM. At this time, the contact area can be increased and the thermal conductivity can be improved by the amount of unevenness and warpage of the contact surface between the T-PM 64 and the base plate 66 by the silicon grease 65 being interposed.

  In the structure shown in FIGS. 8 to 10, the heat generated due to the loss during the switching operation or DC continuous energization operation of the power semiconductor device 51 such as a switching device represented by IGBT and the power semiconductor device 52 such as a freewheeling diode is the power From the back electrode of each of the semiconductor devices 51 and 52, through a base wiring board 53 made of a conductive material such as solder or copper, an insulating sheet 54 made of ceramic or resin, and a back copper foil portion 55 for protecting the insulating sheet 54. Heat is radiated to the outside of T-PM64.

  Since the conventional IPM has the structure shown in FIGS. 8 to 10, during the switching operation or DC continuous energization operation of the power semiconductor device 51 such as a switching device represented by IGBT and the power semiconductor device 52 such as a freewheeling diode. The heat generated due to the loss of heat is mainly radiated from the back electrodes of the power semiconductor devices 51 and 52.

  On the other hand, an N-side electrode 59 made of a conductive material such as copper located on the upper side and electrically connected to the surface electrodes of the power semiconductor devices 51 and 52 is located below the power semiconductor devices 51 and 52. The base wiring board 53 made of a conductive material such as copper is heated to a high temperature.

  Therefore, compared to silicon or the like forming the power semiconductor devices 51 and 52, the conductive material such as copper constituting the N-side electrode 59 of the T-PM 64 positioned on the upper side and the base wiring board 53 positioned on the lower side thereof. On the other hand, the coefficient of thermal expansion increases. In particular, the N-side electrode 59 located on the upper side of the power semiconductor devices 51 and 52 is mechanically expanded and contracted due to heat generated by the loss during the switching operation and the DC continuous energizing operation, as compared with the base wiring board 53 located on the lower side. The amount is large.

  For this reason, the solder joints between the power semiconductor devices 51 and 52 and the conductive material such as copper constituting the N-side electrode 9 located on the upper side and the base wiring board 53 located on the lower side are repeatedly added to the periphery. There has been a problem that reliability is lowered due to cracks due to thermal expansion and contraction of the material accompanying changes in temperature, peeling, and the like.

  In addition, in order to sufficiently cool the surface electrodes of these power semiconductor devices 51 and 52 and continuously energize a larger current during a faster switching operation and DC continuous energization operation, the capacity of the external cooler is improved. For this reason, it is necessary to take measures for cooling such as increasing the size of the power semiconductor device and increasing the formation area of the power semiconductor device to allow a sufficient current density per unit area (enlargement of the chip area). However, taking the above-described cooling measures induces another problem of increasing the size of the apparatus and is not practical.

  In this way, the embodiment described below has solved the problems of the conventional IPM shown in FIGS.

<Embodiment 1>
1 to 3 are explanatory views showing a structure of a semiconductor module with a cooler according to a first embodiment of the present invention, and FIGS. 1 and 2 are a cross-sectional view and a plan view showing a first mode. 3 is a cross-sectional view showing a second embodiment.

  As shown in FIGS. 1 and 2, the base body is constituted by a laminated structure in which the back copper foil portion 5, the insulating sheet 4 and the base wiring board 3 are formed in this order. The base wiring board 3 is made of a conductive material such as copper, the insulating sheet 4 is made of ceramic, resin or the like, and the back copper foil portion 5 made of copper foil is provided to protect the insulating sheet 4.

  Then, on the surface of the base wiring board 3, a power semiconductor device 1 such as a switching device represented by IGBT and a power semiconductor device 2 such as a freewheeling diode electrically connected to the power semiconductor device 1 in parallel are formed. . At this time, the back electrodes of the power semiconductor devices 1 and 2 are bonded to the surface (on the wiring pattern) of the base wiring board 3 using solder or the like.

  The back electrodes of each of the power semiconductor devices 1 and 2 normally function as electrodes on the P side (collector and cathode side), and pass through the wiring pattern formed on the base wiring board 3 so that the surface of the base wiring board 3 The wiring pattern is electrically connected to a P-side electrode 8 that is joined to a part of the wiring pattern with solder or the like. The above (collector and cathode side) means the collector side of the IGBT 81 (see FIG. 4) formed as the power semiconductor device 1 and the cathode side of the free-wheeling diode 82 (see FIG. 4) formed as the power semiconductor device 2. .

  On the other hand, the surface electrodes of the power semiconductor devices 1 and 2 normally function as N-side (emitter and anode side) electrodes, and the N-side electrode 9 (surface-side main electrode terminal) is joined to these surface electrodes by solder or the like. As a result, the surface electrode and the N-side electrode 9 are electrically connected. The P-side electrode 8 and the N-side electrode 9 are made of a conductive material such as copper. The above-mentioned (emitter and anode side) are the emitter side of the IGBT 81 (see FIG. 4) formed as the power semiconductor device 1 and the anode side of the free-wheeling diode 82 (see FIG. 4) formed as the power semiconductor device 2. means.

  In addition, a plurality of third electrode portions including control electrodes (gates and emitters of IGBT 81) of the power semiconductor device 1 and pads such as temperature detection diodes are provided for a plurality of controls via a conductive material 6 such as an aluminum wire for wiring. It is electrically connected to a terminal 7 (in the drawing, one control terminal 7 is shown as a representative). Therefore, some of the control terminals 7 also function as external control terminals in the power semiconductor forming unit 14 such as a temperature detection diode.

  And the power semiconductor formation part 14 is obtained by forming the mold resin 10 covering these components 1-9. Note that the control terminal 7, the tip portions of the P-side electrode 8 and the N-side electrode 9, and the back surface of the back surface copper foil portion 5 are exposed from the mold resin 10. In particular, the tip of the N-side electrode 9 has a long exposed portion from the mold resin 10 so that a cooler 100 described in detail later can be attached.

  FIG. 4 is a circuit diagram showing an equivalent circuit of the power semiconductor forming portion 14 shown in FIG. As shown in the figure, the power semiconductor device 1 is composed of, for example, an IGBT 81, and the power semiconductor device 2 is composed of, for example, a freewheeling diode 82.

  The emitter of the IGBT 81 and the anode of the free-wheeling diode 82 are electrically connected to the N-side electrode 9 in common in the semiconductor device formation region 41 composed of the power semiconductor devices 1 and 2, and the wiring of the base wiring board 3 ( The collector of the IGBT 81 and the cathode of the free-wheeling diode 82 are electrically connected in common to the P-side electrode 8 via the pattern).

  Further, the cooler 100 is fixed to the back side of the N-side electrode 9 by the fixing tool 12. The cooler 100 includes a cooling main body portion 110 having a Peltier element therein, a heat absorption portion 111 provided on the upper surface side of the cooling main body portion 110, a heat exhausting portion 112 provided on the lower surface side of the cooling main body portion 110, and a heat exhausting portion 112. It is comprised from the heat exhausting part 113 for fixation provided in the lower surface side.

  The heat absorption part 111 and the heat exhaust part 112 are wider than the cooling main body part 110 in plan view, and the peripheral regions thereof are formed so as to protrude from the cooling main body part 110. The fixing heat exhaust part 113 is the heat absorption part 111 and the heat exhaust part 112. The shape in plan view is wider, and the peripheral region is formed so as to protrude from the heat exhausting portion 112. The fixing heat exhausting part 113 is formed to have the same thickness and plan view shape as the fixing tool 12.

  Hereinafter, the attachment content of the cooler 100 by the fixture 12 will be described. As shown in FIG. 1, with the upper surface of the heat absorbing portion 111 of the cooler 100 in contact with the back surface of the N-side electrode 9, the fixing tool 12 is arranged on the surface of the N-side electrode 9, and the fixing tool 12 and the cooling device are cooled. By fixing the fixing heat exhausting portion 113 of the cooler 100 with a set screw 29, the space between the N-side electrode 9 and the cooler 100 can be fixed.

  That is, as shown in FIG. 2, the fixing tool 12 (and the fixing heat exhausting portion 113) has a rectangular shape in plan view, and is provided with four female screws 29 through the four corners. One set screw 29 is passed through the outside of the N-side electrode 9 and the cooling main body 110, the heat absorption unit 111, and the fixture 12 of the cooler 11, and the leading end portion of each set screw 29 is used as the fixing exhaust heat unit 113. By fixing with screws, the cooler 100 can be fixed to the N-side electrode 9 while the front surface of the heat absorbing portion 111 and the back surface of the N-side electrode 9 are in strong contact.

  Then, when the cooler 100 is attached to the N-side electrode 9, the bottom surface of the fixing waste heat portion 113 and the back surface of the back copper foil portion 5 in the power semiconductor forming portion 14 are positioned so as to be formed on the same plane. The In addition, being formed on the same plane means that it is formed such that there is a virtual plane including the lower surface of the fixing heat exhausting portion 113 and the rear surface of the back surface copper foil portion 5.

  The heat absorption part 111 and the exhaust heat part 112 are each formed of ceramic having high electrical insulation such as aluminum nitride, and the N-side electrode 9 (high voltage part) for the power semiconductor devices 1 and 2 and the cooler 100. It becomes possible to electrically insulate from the control voltage (low voltage part) for cooling control. Further, the fixing exhaust heat part 113 is formed of ceramic having high electrical insulation such as aluminum nitride, so that both the fixing exhaust heat part 113 and the exhaust heat part 112 function as the exhaust heat part of the cooler 100. Therefore, the lower surface of the fixing heat exhausting portion 113 becomes the lower surface of the cooler 100. In addition, the cooler 100 can be used as a modified example in which the formation of the exhaust heat unit 112 is omitted, and only the fixing heat exhaust unit 113 functions as the exhaust heat unit of the cooler 100.

  The Peltier element provided in the cooling main body 110 is a cooling element that utilizes the Peltier effect, which is one of thermoelectric effects. The Peltier element can control the cooling temperature in accordance with the applied voltage, and can perform arbitrary cooling temperature control corresponding to the transient temperature change of the power semiconductor devices 1 and 2. It becomes possible to most effectively reduce mechanical stress due to thermal expansion to the solder used for joining the surface electrode and the N-side electrode 9. As a result, it is possible to improve the reliability during operation of the power semiconductor devices 1 and 2 of the semiconductor module 31 with a cooler which is the first mode of the first embodiment.

  As described above, the cooler-equipped semiconductor module 31 according to the first aspect of the first embodiment cools the N-side electrode 9, which is a surface-side main electrode terminal that is relatively difficult to cool, from its tip portion. The vessel 100 can be effectively cooled. At this time, the cooling main body 110 constituting the cooler 100 has a Peltier element, and the cooling temperature control corresponding to the applied voltage can be performed on the Peltier element. Appropriate cooling control can be performed.

  As described above, the cooling control by the cooler 100 can reduce the heat generated due to the loss during the switching operation of the IGBT or the like constituting the power semiconductor device 1, and thus the IGBT or the like can perform the switching operation at a higher speed. .

  Furthermore, the cooling control by the cooler 100 can reduce heat generation due to the loss during the DC continuous energization operation in the power semiconductor devices 1 and 2, so that a larger current can be energized continuously. In addition, since the cooler 100 using the Peltier element can be configured with a relatively small device scale, the entire semiconductor module 31 with a cooler can be reduced in size, so that the cost can be reduced. it can.

  Furthermore, the N-side electrode 9 made of a conductive material such as copper joined to the surface electrodes of the power semiconductor devices 1 and 2 through solder has a larger coefficient of thermal expansion than the silicon forming the power semiconductor devices 1 and 2. However, the N-side electrode 9 can be directly cooled by the cooler 100. As a result, it is possible to reduce mechanical stress due to thermal expansion to the solder used for bonding to the surface electrodes of the power semiconductor devices 1 and 2, and thus the reliability of the semiconductor module 31 with a cooler as the IPM can be reduced. Improvements can be made.

  Further, as shown in FIG. 3, by providing the auxiliary cooler 24 on the back surface side of the power semiconductor forming portion 14 and the fixing heat exhausting portion 113 side of the cooler 100, the semiconductor module 31 </ b> B with the cooler of the first embodiment is formed. It can form as a 2nd aspect. That is, the auxiliary cooler 24 is attached to the power semiconductor forming unit 14, the back surface side, and the lower surface side of the exhaust heat unit 112 via the silicon grease 15. The auxiliary cooler 24 is made of aluminum or the like, and has a water-cooling cooling function by circulating the refrigerant 25 inside.

  As described above, the auxiliary cooler is positioned so that the lower surface of the fixing exhaust heat portion 113 of the cooler 100 and the back surface of the back surface copper foil portion 5 in the power semiconductor forming portion 14 are formed on the same plane. The power semiconductor forming part 14 and the cooler 100 can be arranged on the surface of 24 with good stability. As a result, the power semiconductor forming unit 14 and the cooler 100 can be efficiently cooled using the one auxiliary cooler 24.

  In the semiconductor module 31B with the cooler having the auxiliary cooler 24 shown in FIG. 3, the heat generated from the power semiconductor devices 1 and 2 inside the power semiconductor forming unit 14 is provided on the back side of the power semiconductor forming unit 14. Released from the copper foil portion 5 and the like. Further, the heat released to the outside of the power semiconductor forming unit 14 is released to the external auxiliary cooler 24 through the silicon grease 15. At this time, the contact area can be increased and the thermal conductivity can be improved because the contact surface unevenness and warpage between the power semiconductor forming portion 14 and the auxiliary cooler 24 can be suppressed by using the silicon grease 15. it can.

  Further, the cooling function of the auxiliary cooler 24 enables the cooling main body 110 of the cooler 100 to be efficiently cooled from the lower surface of the fixing heat exhausting portion 113, and the cooler 100 using the Peltier element stabilizes the cooling. The cooling accuracy by the cooler 100 can be increased by the amount of heat absorption.

  As described above, the rear surface of the power semiconductor forming portion 14 (back copper foil portion 5) and the lower surface of the cooler 100 (fixing exhaust heat portion 113) are positioned so as to be formed on the same plane. . For this reason, as shown in FIG. 3, the surface of the auxiliary cooler 24 is in such a manner that the back surface of the power semiconductor forming portion 14 forming the same plane, the lower surface of the cooler 100, and the surface of the auxiliary cooler 24 are in good contact. The power semiconductor forming unit 14 and the cooler 100 can be disposed on the top with good stability.

  As a result, the cooler-equipped semiconductor module 31B according to the second aspect of the first embodiment is configured so that the coolant 25 flowing inside the auxiliary cooler 24 causes the rear surface side of the power semiconductor forming unit 14 and the lower surface side of the cooler 100 ( Therefore, stable cooling control is performed by the cooler 100 using a Peltier element for the power semiconductor devices 1 and 2 to be cooled. be able to.

<Embodiment 2>
5 to 7 are explanatory views showing the structure of the semiconductor module with a cooler according to the second embodiment of the present invention, FIG. 5 is a cross-sectional view showing the first aspect, and FIGS. It is sectional drawing and a top view which show the aspect of 2. FIG.

  As shown in FIG. 5, the cooler 11 is housed in the case 18 together with the power semiconductor forming portion 14 that constitutes the cooler-equipped semiconductor module 31 shown in the first embodiment, and thereby the first mode of the second embodiment. The cooler-equipped semiconductor module 32 is formed.

  Hereinafter, the structure of the first aspect of the second embodiment will be described with a focus on the differences from the first embodiment while omitting the description of the same components as those of the first embodiment with the same reference numerals.

  In the second embodiment, the cooler 11 is fixed to the back side of the N-side electrode 9 by the fixing tool 12. The cooler 11 includes a cooling main body part 110 having a Peltier element therein, a heat absorption part 111 provided on the upper surface side of the cooling main body part 110, and a heat exhausting part 112 provided on the lower surface side of the cooling main body part 110. The configuration of the cooler 11 is different from that of the cooler 100 shown in the first embodiment in that the cooler 11 does not have the fixing heat exhausting portion 113.

  On the surface of the base plate 16 made of copper or the like, the back surface of the power semiconductor forming unit 14 and the lower surface of the cooler 11 (the exhaust heat unit 112 thereof) are arranged via silicon grease 15 for improving the thermal conductivity.

  Hereinafter, the attachment content of the cooler 11 by the fixture 12 will be described. As shown in FIG. 5, the upper surface of the heat absorbing portion 111 of the cooler 11 is in contact with the back surface of the N-side electrode 9, and the exhaust heat portion 112 is disposed on the base plate 16 with the silicon grease 15 interposed therebetween. The fixture 12 is disposed on the surface of the side electrode 9, and the N-side electrode 9 and the cooler 11 are sandwiched between the fixture 12 and the base plate 16. Then, in this state, the fixing tool 12 and the base plate 16 are fixed with screws by fixing screws 29, whereby the N-side electrode 9 and the cooler 11 can be fixed.

  That is, as described above, the fixture 12 has a rectangular shape in plan view (see FIG. 2). The four fixing screws 29 are provided through the four corners, and the four fixing screws 29 are N. By passing the side electrode 9 and the outside of the cooler 11 through the silicon grease 15 and fixing the tip portions of the female screws 29 to the base plate 16 with screws, the surface of the heat absorbing portion 111 and the N-side electrode 9 are fixed. The cooler 11 can be fixed to the N-side electrode 9 while making strong contact with the back surface of the N-side electrode 9.

  When the cooler 11 is attached to the N-side electrode 9, the lower surface of the cooler 11 and the back surface of the back copper foil portion 5 in the power semiconductor forming portion 14 are positioned so as to be formed on the same plane.

  On the other hand, a pressing plate 17 is provided on the power semiconductor forming portion 14. Accordingly, the holding plate 17 is fixed to a predetermined position in the case 18 by being screwed to a screwing portion (not shown) provided inside the case 18. The pressing plate 17 acts to press the power semiconductor forming portion 14 toward the base plate 16 when being accommodated in the case 18. Accordingly, the pressing action is indirectly exerted on the base plate 16 side by the pressing plate 17 also on the cooler 11 connected to the power semiconductor forming portion 14 by the fixture 12.

  Further, a printed wiring board 19 (printed circuit board: PCB) on which a drive circuit, a protection circuit, and the like are mounted is provided above the pressing plate 17 via a shield plate 20. The control terminal 7 of the power semiconductor forming portion 14 is joined by solder or the like through the through hole.

  Further, the printed wiring board 19 and the shield board 20 are fixed at predetermined positions in the case 18 by being screwed to a screwing portion (not shown) provided inside the case 18.

  The shield plate 20 is made of aluminum or the like so as to shield the printed wiring board 19 from electromagnetic induction noise caused by steep voltage and current changes.

  The external terminal 21 for the P-side main electrode made of a conductive material such as copper is inserted into the case 18 from the outside side surface, and is electrically connected to the P-side electrode 8 by welding or the like in the case 18. Connected. Similarly, an N-side main electrode external terminal 22 (surface-side external terminal) made of a conductive material such as copper is inserted into the case 18 from the outer side surface, and the most distal portion of the N-side electrode 9 in the case 18 And are connected electrically by welding or the like. Accordingly, the external terminal 21 and the external terminal 22 are formed to extend from the inside of the case 18 to the external side surface.

  As described above, the semiconductor module 32 with a cooler according to the second embodiment is formed by housing the power semiconductor forming portion 14 in the case 18. That is, a power semiconductor device 14 in which a power semiconductor device 1 such as a switching device represented by IGBT and a power semiconductor device 2 such as a free-wheeling diode are electrically connected in parallel, driving of a switching device such as IGBT, A cooler-equipped semiconductor module 32 that is an IPM including a printed wiring board 19 that detects an abnormality in current and temperature is configured.

  Thus, the cooler-equipped semiconductor module 32 according to the first aspect of the second embodiment is formed on the base plate 16 by the pressing action against the power semiconductor forming portion 14 by the pressing plate 17 fixed when accommodated in the case 18. In addition, the power semiconductor forming portion 14 and the cooler 11 can be more firmly fixed.

  Furthermore, as shown in FIG. 6, the auxiliary cooler 24 is provided on the back side of the power semiconductor forming portion 14, whereby the cooler-equipped semiconductor module 32 </ b> B of the second aspect can be formed. That is, the auxiliary cooler 24 is disposed on the back surface side of the base plate 16 via the silicon grease 23. As described above, the auxiliary cooler 24 has a water-cooling cooling function by circulating the refrigerant 75 therein.

  In the semiconductor module with cooler 32B having the auxiliary cooler 24 shown in FIG. 6, the heat generated from the power semiconductor devices 1 and 2 inside the power semiconductor forming unit 14 is provided on the back side of the power semiconductor forming unit 14. Released from the copper foil portion 55 and the like. Further, the heat released to the outside of the power semiconductor forming unit 14 is released to the auxiliary cooler 24 through the silicon grease 15 and the base plate 16. At this time, through the silicon grease 15, the contact area between the power semiconductor forming portion 14, the cooler 11, and the base plate 16 is increased to improve the thermal conductivity.

  As described above, the cooler-equipped semiconductor module 32 (32B) of the second embodiment includes the back surface of the power semiconductor forming portion 14 (the back surface copper foil portion 5) and the bottom surface of the cooler 11 (the heat exhaust portion 112). Are positioned on the same plane. For this reason, as shown in FIG. 6, the rear surface of the power semiconductor forming portion 14 and the lower surface of the cooler 11 that form the same plane can be stably disposed on the surface of the base plate 16 via the silicon grease 15. it can.

  As a result, the cooler-equipped semiconductor module 32 </ b> B according to the second aspect of the second embodiment is efficient from the back surface side of the power semiconductor forming unit 14 and the lower surface side of the cooler 11 by the refrigerant 25 flowing inside the auxiliary cooler 24. Therefore, stable cooling control by the cooler 11 using a Peltier element can be performed on the power semiconductor devices 1 and 2 to be cooled.

  Further, the cooler-equipped semiconductor module 32B houses two power semiconductor forming portions 14 (14a, 14b) as shown in FIG.

  That is, the cooler-equipped semiconductor module 32B according to the second aspect of the second embodiment includes, as the power semiconductor forming portion 14, each of the power semiconductor devices 1 and 2, the base (3 to 5), the conductive material 6, and the control Two power semiconductor forming portions 14 a and 14 b each having a terminal 7, a P-side electrode 8, an N-side electrode 9, and a mold resin 10 are provided. Furthermore, an external terminal 21 and an external terminal 22 are provided for each of the power semiconductor forming portions 14a and 14b.

  On the other hand, a base plate 16, a pressing plate 17, a printed wiring board 19, and a shield plate 20 are provided in common for the power semiconductor forming portions 14a and 14b.

  And as the cooler 11, each has the cooling main-body part 110, the heat absorption part 111, and the exhaust heat part 112, and the two coolers 11a and 11b provided corresponding to the power semiconductor formation parts 14a and 14b one by one. have.

  As described above, the base plate 16 is provided in common to the power semiconductor forming portions 14a and 14b and the coolers 11a and 11b, and the power semiconductor forming portions 14a and 14b are disposed on one base plate 16 via the silicon grease 15. In addition, coolers 11a and 11b are arranged.

  Furthermore, the auxiliary | assistant cooler 24 is provided via the silicon grease 23 in the back surface side of the power semiconductor formation part 14 (14a, 14b) and the exhaust heat part 112 side of the cooler 11 (11a, 11b), and becomes a 2nd aspect. The semiconductor module 32B with a cooler is formed.

  As described above, the lower surface of the heat exhausting portion 112 of each of the coolers 11a and 11b and the back surface of the back surface copper foil portion 5 in each of the power semiconductor forming portions 14a and 14b are positioned so as to be formed on the same plane. It can be provided on the base plate 16 with good stability. Therefore, in the second mode of the second embodiment, in the structure in which a plurality of power semiconductor forming units 14 and coolers 11 are provided, one auxiliary cooler 24 is provided for the plurality of power semiconductor forming units 14 and coolers 11. There exists an effect which can be cooled efficiently.

  In the semiconductor module with cooler 32B of the second embodiment in which the plurality of power semiconductor forming portions 14 (14a, 14b) are mounted, a part of the power semiconductor forming portions 14 (for example, 14a) due to thermal interference and current imbalance. There is a case where a thermal imbalance in which the power semiconductor device in the parenthesis becomes higher temperature than other power semiconductor forming portions 14 (for example, 14b) may occur.

  When such a thermal imbalance occurs, in the conventional semiconductor device (IPM), there is a problem that some power semiconductor formation portions become higher in temperature than other power semiconductor formation portions and the reliability is significantly reduced. Likely to occur.

  On the other hand, in the semiconductor module 32B with a cooler that is the second mode of the second embodiment, the coolers 11a and 11b are provided on the power semiconductor forming portions 14a and 14b in a one-to-one correspondence. And 11b, the power semiconductor forming portions 14a and 14b can be individually cooled by changing the cooling capacity. That is, it is possible to set different cooling capacities between the coolers 11a and 11b by changing the voltage applied to the Peltier elements in the cooling body 110 of each of the coolers 11a and 11b.

  Thus, in the semiconductor module 32B with a cooler, the cooler using the Peltier element in the cooling main body 110 is provided by providing the plurality of coolers 11 in a one-to-one correspondence with the plurality of power semiconductor forming portions 14. 11 can be individually set for each of the plurality of coolers 11, so that the cooling control for effectively mitigating the thermal imbalance among the plurality of power semiconductor forming portions 14 described above can be performed. Can be improved. As a result, the life of the semiconductor module 32B with a cooler can be extended.

  For example, when the power semiconductor forming part 14a is in a higher temperature state than the power semiconductor forming part 14b, the heat generated by the power semiconductor forming parts 14a and 14b is increased by selectively increasing the cooling capacity of the cooler 11a. Cooling control that effectively suppresses mechanical imbalance can be performed.

  As described above, the cooler-equipped semiconductor module 32B according to the second aspect of the second embodiment is cooled by the plurality of coolers 11 provided in a one-to-one correspondence with the plurality of power semiconductor forming portions 14. It is possible to effectively cool the N-side electrode 9 (surface-side main electrode terminal) of each of the plurality of semiconductor forming portions, which is relatively difficult, from the tip portion. At this time, each of the plurality of cooling main body portions 110 has a Peltier element, and the cooling temperature can be controlled according to the applied voltage with respect to the Peltier element. Can be demonstrated.

  That is, due to current imbalance during operation, some of the semiconductor devices (the plurality of power semiconductor devices 1 and 2) in the plurality of power semiconductor forming portions 14 are thermally imbalanced such that some of the semiconductor devices become high temperature. On the other hand, the thermal imbalance can be effectively reduced by selectively increasing the cooling capacity of a part of the coolers 11 corresponding to the power semiconductor forming part 14 having the part of the semiconductor devices. Therefore, the reliability as the semiconductor module 32B with a cooler can be improved.

  In the second mode of the second embodiment, two cases are shown as the plurality of power semiconductor forming portions 14 (the plurality of coolers 11). Of course, a configuration including three or more power semiconductor forming portions 14 is also possible. Is possible.

  In the second embodiment, the cooler 11 including the cooling main body 110, the heat absorption unit 111, and the exhaust heat unit 112 is used, but the cooler 100 used in the first embodiment is used instead of the cooler 11. May be. In this case, positioning is performed so that the back surface of the power semiconductor forming portion 14 (in the back copper foil portion 5) and the bottom surface of the cooler 100 (in the fixing waste heat portion 113) are formed on the same plane, thereby forming the power semiconductor. The back surface of the portion 14 and the lower surface of the cooler 100 are disposed on the surface of the base plate 16 with a good stability via the silicon grease 15.

  It should be noted that the present invention can be freely combined with each other within the scope of the invention, and each embodiment can be appropriately modified or omitted.

  1, 2 Power semiconductor device, 3 Base wiring board, 4 Insulating sheet, 5 Back copper foil part, 6 Conductive material, 7 Control terminal, 8 P side electrode, 9 N side electrode, 10 Mold resin, 11, 100 Cooler , 12 Fixing device, 14 Power semiconductor forming part, 15, 23 Silicon grease, 16 Base plate, 17 Press plate, 18 Case, 19 Printed wiring board, 20 Shield plate, 21, 22 External terminal, 24 Auxiliary cooler, 25 Refrigerant , 31, 31B, 32, 32B A semiconductor module with a cooler.

Claims (3)

A semiconductor module with a cooling function configured by combining a semiconductor forming unit having a power semiconductor device and a cooler,
The semiconductor forming part is
A base on which the power semiconductor device is disposed on a surface;
A surface-side main electrode terminal electrically connected to an electrode portion formed on the surface of the semiconductor device;
The power semiconductor, the base, and a mold resin portion formed to cover the front-side main electrode terminal, and the back surface of the base and the front-end portion of the front-side main electrode terminal are exposed from the mold resin portion. ,
The cooler includes a cooling main body portion having a Peltier element, and a heat absorption portion and a heat exhaust portion provided at an upper portion and a lower portion of the cooling main body portion, and the upper surface of the heat absorption portion and the surface side main electrode terminal The cooler is fixed to the semiconductor forming portion in a manner in which the tip portions are in contact with each other,
The back surface of the base body in the semiconductor forming portion and the lower surface of the exhaust heat portion in the cooler are formed on the same plane,
Semiconductor module. The semiconductor module according to claim 1,
A base plate for disposing the base and the cooler on a surface;
A pressing plate disposed on the semiconductor forming portion;
A case for housing the base plate, the pressing plate, the semiconductor forming portion, and the cooler therein, and the pressing plate presses the semiconductor forming portion toward the base plate when housed in the case. Fixed,
A surface-side external terminal formed to protrude from the inside of the case to the outside and electrically connected to the surface-side main electrode terminal;
Semiconductor module. The semiconductor module according to claim 2,
The semiconductor forming portion includes a plurality of semiconductor forming portions each having the power semiconductor, the base, the surface-side main electrode terminal, and the mold resin portion,
The cooler includes a plurality of coolers each having the cooling main body portion, the heat absorbing portion, and the exhaust heat portion, and provided in one-to-one correspondence with the plurality of semiconductor forming portions,
A plurality of the surface side external terminals are provided in one-to-one correspondence with the plurality of semiconductor forming portions, and the base plate and the pressing plate are common to the plurality of semiconductor forming portions and the plurality of coolers. Provided,
Semiconductor module.

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