JP2015090924A - Semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of achieving further downsizing.SOLUTION: A semiconductor device 1 comprises: a semiconductor element 20 having a first member 21, a second member 25 and a semiconductor chip 31 arranged between the first member 21 and the second member 25; and a substrate 10 provided with a hole 15 in an insulation member in which a wiring pattern 13 is formed. The semiconductor element 20 is fitted in the hole 15 of the substrate 10 and the semiconductor chip 31 included in the semiconductor element 20 and the wiring pattern 13 formed in the substrate 10 are electrically connected.

Description

  The present invention relates to a semiconductor device.

  For example, an inverter circuit is widely known as a semiconductor device including a semiconductor element such as a MOSFET (metal-oxide-semiconductor field-effect transistor). In such a semiconductor device, a semiconductor element is generally disposed on the upper surface of a metal substrate on which a wiring pattern is formed. For example, Patent Document 1 discloses a semiconductor device in which a semiconductor element is arranged on one surface of a metal substrate on which a wiring pattern is formed.

JP 2001-44581 A

  In recent years, with the demand for downsizing of electronic devices, semiconductor devices such as inverter circuits are also required to be downsized. However, in the configuration in which the semiconductor element is arranged on the upper surface of the metal substrate as described above, further miniaturization is difficult due to constraints such as the height of the semiconductor element itself and the terminals protruding from the semiconductor element.

  Therefore, an object of the present invention is to provide a semiconductor device that can be further miniaturized.

  A semiconductor device according to one aspect of the present invention includes a semiconductor element having a first member, a second member, and a semiconductor chip disposed between the first member and the second member, and an insulation in which a wiring pattern is formed. A semiconductor element is fitted into the hole of the substrate, and a semiconductor chip included in the semiconductor element and a wiring pattern formed on the substrate are electrically connected to each other. It is connected.

  In the semiconductor device having this configuration, since the semiconductor element is fitted in the hole provided in the substrate, the size in the thickness direction of the substrate is smaller than the configuration in which the semiconductor element is placed on one surface of the substrate. Can be achieved. Moreover, since the semiconductor chip is fitted in a state sandwiched between the first member and the second member, damage to the semiconductor chip when the semiconductor element is fitted into the hole of the substrate can be suppressed. , Can maintain productivity.

  In one embodiment, at least one of the first member and the second member is a conductive member, and the semiconductor chip and the wiring pattern may be electrically connected via the conductive member.

  Thereby, electrical connection between the semiconductor chip and the wiring pattern of the substrate can be easily realized.

  In one embodiment, the 1st member and the 2nd member may be separated via an interval maintenance member.

  In the semiconductor device having this configuration, the stress applied to the semiconductor chip when the semiconductor element is fitted into the hole of the substrate can be reduced, so that damage to the semiconductor chip can be more reliably suppressed.

  In one embodiment, the gap between the first member and the second member may be molded with a resin material.

  In the semiconductor device having this configuration, it is possible to more reliably suppress damage to the semiconductor chip when the semiconductor element is fitted into the hole of the substrate. Further, it is possible to ensure insulation in the in-plane direction of the main surface of the substrate with respect to the semiconductor chip, in other words, in the direction orthogonal to the thickness direction of the substrate.

  In one embodiment, each of the first member and the second member has an outer surface that is a surface opposite to the surface on which the semiconductor chip is disposed, and each of the first member and the second member. A heat radiating member that conducts heat from the first member and the second member may be provided on at least one of the outer side surfaces.

  In the semiconductor device having this configuration, heat generated in the semiconductor element can be radiated. In addition, since the heat dissipating member can be disposed closer to the semiconductor element than when the semiconductor element is placed on the upper surface of the substrate, heat can be radiated more efficiently. Furthermore, when the heat radiating members are arranged on both the outer surfaces of the first member and the second member, more efficient heat radiating becomes possible, and when trying to obtain the same heat radiating effect, the first member and the second member Compared with the case where the heat radiating member is provided on one surface of the two members, the overall size can be made compact.

  In one embodiment, at least one of the first member and the second member may protrude from the main surface of the substrate.

  In the semiconductor device having this configuration, for example, when a heat dissipation member is provided on at least one of the outer surfaces of the first member and the second member, it is easy to make contact with the heat dissipation member.

  According to the present invention, further miniaturization can be achieved.

It is sectional drawing which shows the semiconductor device which concerns on one Embodiment. It is the perspective view which decomposed | disassembled and showed the semiconductor element. It is the figure which showed an example of the assembly method of a semiconductor device. It is sectional drawing which shows the semiconductor device which concerns on other embodiment.

  Hereinafter, a semiconductor device 1 according to an embodiment will be described with reference to the drawings. In the description of the drawings, the same elements are denoted by the same reference numerals, and redundant description is omitted. The dimensional ratios in the drawings do not necessarily match those described. In the description, words indicating directions such as “upper surface” and “lower surface” are convenient words based on the state shown in the drawings.

  FIG. 1 is a cross-sectional view illustrating a semiconductor device according to an embodiment. In the figure, a semiconductor device 1 is used in an inverter device mounted on a vehicle such as an electric vehicle or a hybrid vehicle. As shown in FIG. 1, the semiconductor device 1 mainly includes a substrate 10 that supports the semiconductor element 20, the semiconductor element 20, and a heat sink (heat radiating member) 50.

  The substrate 10 is a so-called printed board formed from an insulating member. An example of the insulating member is a resin. A wiring pattern 13 is formed on each of the upper surface 10 a and the lower surface 10 b that are the main surfaces of the substrate 10. The wiring pattern 13 is formed of a conductive material such as copper, for example. The substrate 10 is formed with a hole 15 for fitting a semiconductor element 20 described in detail later.

  The semiconductor element 20 includes a first member 21, a second member 25, a spacing member 27, and a semiconductor chip 31. The first member 21 and the second member 25 of the present embodiment are formed of a conductive member such as copper and aluminum, and are electrically connected to the wiring pattern 13 (external circuit) formed on the substrate 10. Functions as a terminal. The first member 21 and the second member 25 also function as a protective member that prevents the semiconductor chip 31 from being damaged when the semiconductor element 20 is press-fitted into the hole 15 of the substrate 10.

  The semiconductor chip 31 constitutes a part of a circuit necessary for power conversion control. The semiconductor chip 31 is disposed between the first member 21 and the second member 25, and the first member 21 and the second member 25 are respectively fixed by solder 35. Examples of the semiconductor chip 31 include a MOSFET transistor and an insulated gate bipolar transistor (IGBT). Hereinafter, an example in which a MOSFET transistor is mounted as the semiconductor chip 31 will be described.

  FIG. 2 is an exploded perspective view showing the semiconductor element 20. As shown in FIG. 2, the first member 21 has a source terminal portion 21 a that functions as a source terminal of the semiconductor chip 31 and a gate terminal portion 21 b that functions as a gate terminal of the semiconductor chip 31. The second member 25 (also referred to as “drain terminal portion 25”) functions as a drain terminal of the semiconductor chip 31. The terminal portions 21 a, 21 b, and 25 are connected to a predetermined wiring pattern 13 when the semiconductor element 20 is fitted in the hole portion 15. In addition, the connection part of each terminal part 21a, 21b, 25 and the wiring pattern 13 may be soldered.

  Between the first member 21 and the second member 25, columnar spacing members 27 are arranged at the four corners of the first member 21 and the second member 25, respectively. That is, the first member 21 and the second member 25 are separated via the spacing member 27. Note that the shape, the number, and the like of the spacing member 27 are appropriately set in consideration of the strength required for the semiconductor chip 31 in the assembly process.

  When the first member 21 and the second member 25 function as terminals as in the present embodiment, examples of the material of the spacing member 27 are insulating materials such as resin and ceramic, and insulating materials such as resin and ceramic on the metal surface. For example, a metal whose surface is covered with a material. That is, a material that can ensure insulation between the first member 21 and the second member 25 is selected. For example, when the support pillars that are the spacing members 27 are made of metal and arranged so as to contact the second member 25 that functions as the drain terminal, the first member 21 that functions as the source terminal and the pillars that are the spacing member 27 Insulation is performed with a mold resin.

  If at least one of the first member 21 and the second member 25 does not function as a terminal, or if at least one of the first member 21 and the second member 25 is formed of an insulating material, the first member 21 and It is not necessary to consider the insulation between the second member 25.

  As shown in FIG. 1, between the first member 21 and the second member 25, the periphery of the semiconductor chip 31 is molded with a mold resin 37. In this embodiment, it is integrally molded including the spacing member 27.

  A heat sink 50 that dissipates heat generated in the semiconductor element 20 during power conversion is disposed on the lower surface 10b side of the substrate 10. The heat sink 50 is made of a metal material such as aluminum or copper that is relatively easy to conduct heat. The heat sink 50 of the present embodiment is disposed on the outer surface 25 c, which is the surface opposite to the surface on which the semiconductor chip 31 of the second member 25 is disposed, with an insulating sheet 39 interposed therebetween. Accordingly, heat generated in the semiconductor chip 31 can be conducted to the heat sink 50 while ensuring insulation between the second member 25 functioning as a terminal.

  The second member 25 that is in contact with the heat sink 50 via the insulating sheet 39 protrudes from the lower surface 10b, which is one main surface of the substrate 10, to the heat sink 50 side. As a result, the semiconductor element 20 can be easily brought into contact with the heat sink 50, and the insulating property between the wiring pattern 13 formed on the lower surface 10b of the substrate 10 can be easily secured.

  According to the semiconductor device 1 of the above embodiment, since the semiconductor element 20 is fitted in the hole 15 provided in the substrate 10, the semiconductor element 20 is placed on one surface of the substrate 10. In comparison, the size of the substrate 10 in the thickness direction can be reduced.

  When the semiconductor chip 31 is fitted into the hole 15 of the substrate 10, it is necessary to prevent breakage during press-fitting. In the semiconductor device 1 of the above embodiment, as shown in FIG. 3, the semiconductor chip 31 is press-fitted into the hole 15 while being sandwiched between the first member 21 and the second member 25. Damage to the semiconductor chip 31 when fitted into the hole 15 of the substrate 10 can be suppressed, and productivity can be maintained.

  Furthermore, in the semiconductor device 1 of the above embodiment, since the first member 21 and the second member 25 are separated via the spacing member 27, the stress applied to the semiconductor chip 31 during press-fitting can be further relaxed. .

  Furthermore, since the semiconductor element 20 is disposed in the hole 15 of the substrate 10, the semiconductor element 20 can be disposed in the immediate vicinity of the heat sink 50, and higher heat dissipation can be obtained.

  Although one embodiment has been described above, the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the invention.

  In the semiconductor device 1 of the above-described embodiment, the example in which the heat sink 50 is provided on the lower surface 10b side of the substrate 10 has been described, but the present invention is not limited to this. FIG. 4 is a cross-sectional view showing a semiconductor device 101 according to another embodiment. As shown in FIG. 4, in addition to the heat sink 50 provided on the lower surface 10 b side of the substrate 10, a heat sink (heat radiating member) 60 may be provided on the upper surface 10 a side of the substrate 10. Hereinafter, the heat sink 60 will be described in detail.

  The heat sink 60 is provided in contact with the upper surface 21 c of the first member 21. The heat sink 60 is connected to the wiring pattern 13 formed on the upper surface 10 a of the substrate 10 by solder 61. Thereby, the semiconductor chip 31 and the wiring pattern 13 of the substrate 10 can be electrically connected. In other words, the heat sink 60 functions as a heat dissipation member as well as an electrode. According to the semiconductor device 101 having this configuration, the heat generated in the semiconductor element 20 can be radiated more efficiently.

  In the semiconductor devices 1 and 101 of the above-described embodiment, the example in which the wiring pattern 13 is formed on both the upper surface 10a and the lower surface 10b which are the main surfaces of the substrate 10 has been described, but the present invention is limited to this. is not. For example, a so-called build-up substrate in which a part of the layered structure is configured as a wiring pattern can be employed. In addition, the wiring pattern 13 can be formed on both the main surface of the substrate 10 and the interlayer of the substrate 10. In these cases, as in the above embodiment, when the semiconductor element 20 is fitted in the hole 15, the semiconductor chip 31 and the wiring pattern 13 existing between the layers are electrically connected.

  Further, in the semiconductor devices 1 and 101 of the above embodiment, as illustrated in FIG. 1, the periphery of the semiconductor chip 31 has been described by taking an example in which the periphery of the semiconductor chip 31 is molded with the mold resin 37 including the interval holding member 27. It is not limited to. For example, the periphery of the semiconductor chip 31 may be molded with a mold resin 37 as a configuration without the spacing member 27.

  Further, in the semiconductor devices 1 and 101 of the above-described embodiment, as illustrated in FIG. 1, the example in which the columnar spacing members 27 are disposed has been described, but the present invention is not limited thereto, For example, a frame-shaped interval holding member 27 arranged so as to surround the semiconductor chip 31 may be arranged.

  Further, in the semiconductor devices 1 and 101 of the above embodiment, the example in which both the first member 21 and the second member 25 function as terminals has been described, but the present invention is not limited to this. For example, one member Only a conductive member that functions as a terminal may be used, or both members may not be configured by a conductive member that functions as a terminal.

  DESCRIPTION OF SYMBOLS 1,101 ... Semiconductor device, 10 ... Board | substrate, 10a ... Upper surface, 10b ... Lower surface, 13 ... Wiring pattern, 15 ... Hole part, 20 ... Semiconductor element, 21 ... 1st member, 21a ... Source terminal part, 21b ... Gate terminal 25, second member (drain terminal portion), 27, spacing member, 31 semiconductor chip, 37 mold resin, 39 insulating sheet, 50, 60 heat sink (heat radiating member).

Claims (6)

A semiconductor element having a first member, a second member, and a semiconductor chip disposed between the first member and the second member;
A substrate in which a hole is provided in an insulating member on which a wiring pattern is formed;
With
The semiconductor element is fitted in the hole of the substrate, and a semiconductor chip included in the semiconductor element and a wiring pattern formed on the substrate are electrically connected.
Semiconductor device. At least one of the first member and the second member is a conductive member;
The semiconductor chip and the wiring pattern are electrically connected via the conductive member,
The semiconductor device according to claim 1. The first member and the second member are separated via a spacing member,
The semiconductor device according to claim 1. The gap portion between the first member and the second member is molded with a resin material,
The semiconductor device as described in any one of Claims 1-3. The first member and the second member each have an outer surface that is a surface opposite to the surface on which the semiconductor chip is disposed,
At least one of the outer surfaces of the first member and the second member is provided with a heat radiating member that conducts heat from the first member and the second member.
The semiconductor device as described in any one of Claims 1-4. At least one of the first member and the second member protrudes from the main surface of the substrate;
The semiconductor device according to claim 1.

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