JP2015073062A - Substrate processing device, purge device, manufacturing method for semiconductor device, and program - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve manufacturing quality of a semiconductor device and to improve manufacture throughput.SOLUTION: A substrate processing device includes a process container for processing a substrate, a first purge part which executes a first purge that supplies inactive gas at a first flow rate to a substrate housing device in which the substrate is housed, and a second purge part which executes a second purge that supplies the inactive gas at a second flow rate that is less than the first flow rate to the substrate housing device.

Description

  The present invention relates to a substrate processing apparatus, a purge apparatus, a semiconductor device manufacturing method, and a program.

  In a processing apparatus for manufacturing a semiconductor device such as a large scale integrated circuit (hereinafter referred to as LSI), in order to suppress the formation of a natural oxide film on the substrate to be processed, the oxygen concentration in the processing apparatus or the processing apparatus Reducing the oxygen concentration in the pod that is transported to the pod. (For example, refer to Patent Document 1).

JP 2011-611156 A

  However, in the processing apparatus having such a configuration, it is difficult to improve the quality of the semiconductor device and to improve the manufacturing throughput while suppressing the formation of a natural oxide film required by the latest miniaturization technology.

  The present invention provides a substrate processing apparatus, a purge apparatus, a semiconductor device manufacturing method, and a program capable of improving the quality of a semiconductor device while suppressing the formation of a natural oxide film and improving the manufacturing throughput. Objective.

  According to one aspect of the present invention, a processing container that processes a substrate, a first purge unit that performs a first purge that supplies an inert gas at a first flow rate to a substrate container that accommodates the substrate, There is provided a substrate processing apparatus including a second purge unit that performs a second purge for supplying an inert gas to the substrate container at a second flow rate smaller than the first flow rate.

  According to another aspect of the present invention, a first purge unit that performs a first purge that supplies an inert gas at a first flow rate to a substrate container in which a substrate is accommodated, and an inert gas to the substrate container. There is provided a purge device including a second purge unit that executes a second purge that is supplied at a second flow rate smaller than the first flow rate.

  According to still another aspect of the present invention, a first purge step of executing, in the first purge unit, a first purge for supplying an inert gas at a first flow rate to a substrate container in which a substrate is accommodated; The second purge unit performs a step of transporting the chamber from the first purge unit to the second purge unit, and a second purge for supplying the substrate container with an inert gas at a second flow rate lower than the first flow rate. And a second purging step. A method for manufacturing a semiconductor device is provided.

According to still another aspect of the present invention, a first purge procedure for executing a first purge for supplying an inert gas at a first flow rate to a substrate container in which a substrate is accommodated at a first flow rate, and the substrate accommodation The second purge unit executes a procedure for transporting the chamber from the first purge unit to the second purge unit and a second purge for supplying the substrate container with an inert gas at a second flow rate lower than the first flow rate. And a second purging procedure for causing the computer to execute the second purging procedure.

  According to the substrate processing apparatus, the purge apparatus, the semiconductor device manufacturing method, and the program according to the present invention, the manufacturing quality of the semiconductor device and the characteristics of the semiconductor device can be improved and the manufacturing throughput can be improved.

It is a perspective view of the substrate processing apparatus which concerns on one Embodiment of this invention. It is side surface perspective drawing of the substrate processing apparatus which concerns on one Embodiment of this invention. It is a longitudinal cross-sectional view of the processing container with which the substrate processing apparatus which concerns on one Embodiment of this invention is provided. It is a figure which shows the structural example of the main mounting part which concerns on one Embodiment of this invention. It is a figure which shows the structural example of the sub mounting part which concerns on one Embodiment of this invention. It is a schematic block diagram of the controller of the substrate processing apparatus used suitably by embodiment of this invention. It is a flowchart which shows the carrying-in process of the substrate container which concerns on one Embodiment of this invention. It is a flowchart which shows the carrying-out process of the substrate container which concerns on one Embodiment of this invention. It is a figure which shows the example of transition of the oxygen concentration in the substrate container which concerns on one Embodiment of this invention. (A) is a figure which shows the oxygen concentration transition example in the pod of a 1st purge. (B) is a figure which shows the oxygen concentration transition example in the pod of a 2nd purge. It is a flowchart which shows the substrate processing process which concerns on one Embodiment of this invention. It is a flowchart which shows the conveyance process of the substrate container which concerns on the other form of this invention. It is a flowchart which shows the conveyance process of the substrate container which concerns on the other form of this invention. It is a flowchart which shows the conveyance process of the substrate container which concerns on the other form of this invention. It is a flowchart which shows the conveyance process of the substrate container which concerns on the other form of this invention. It is a flowchart which shows the conveyance process of the substrate container which concerns on the other form of this invention. It is a plane sectional view of the pod opener concerning other forms of the present invention.

  An embodiment of the present invention will be described with reference to the drawings.

(Configuration of substrate processing equipment)
First, the configuration of the substrate processing apparatus 100 according to the present embodiment will be described mainly with reference to FIGS. 1 and 2. FIG. 1 is a perspective view of a substrate processing apparatus 100 according to the present embodiment. FIG. 2 is a side perspective view of the substrate processing apparatus 100 according to the present embodiment. In the substrate processing apparatus according to the present embodiment, a step of forming a film on the substrate, a step of modifying the film, etc. are performed among the steps of manufacturing a semiconductor device and a semiconductor element. Here, the semiconductor device is an integrated circuit such as the above-described LSI, a microprocessor, a semiconductor memory, or the like. The semiconductor element is a diode, a transistor, a thyristor, or the like.

  As shown in FIGS. 1 and 2, the substrate processing apparatus 100 according to the present embodiment includes a housing 111 configured as a pressure vessel. A front maintenance port 103 is provided in front of the front wall 111a of the casing 111 as an opening provided for maintenance. The front maintenance port 103 is provided with a front maintenance door 104 that opens and closes the front maintenance port 103.

  In order to transport the wafer 200 as a substrate into and out of the casing 111, a pod 110 as a wafer carrier (substrate container) that stores a plurality of wafers 200 is used. For example, (FOUP) is used as the wafer carrier. A pod loading / unloading port (substrate container loading / unloading port) 112 is opened on the front wall 111 a of the housing 111 so as to communicate between the inside and the outside of the housing 111. The pod loading / unloading port 112 is configured to be opened and closed by a front shutter (substrate container loading / unloading port opening / closing mechanism) 113. A load port (substrate container delivery table) 114 is installed on the lower front side of the pod loading / unloading port 112. The pod 110 is transported by the in-process transport device, and is placed on the load port 114 to be aligned. The wafer 200 is made of silicon (Si) or the like. On the wafer 200, a metal film constituting a semiconductor device and a metal film as an electrode are formed, and the formation of a natural oxide film on the metal film is a problem. In addition, the structure of the semiconductor device formed on the wafer 200 may be complicated. A substrate during the manufacture of such a semiconductor device may have a large surface area. For example, irregularities with a high aspect ratio are formed. In such a complicated structure and a substrate having a large surface area, there is a problem that a natural oxide film is locally formed. It is also conceivable that a natural oxide film is locally formed due to an increase in surface area due to an increase in wafer size.

  In order to improve the manufacturing throughput while suppressing the formation of the natural oxide film on the wafer 200 and improving the quality of the semiconductor device, the inventors have reduced the oxygen concentration described later. Found that it was necessary.

(Substrate container transfer chamber)
A substrate container transfer chamber 150 serving as a transfer space for the pod 110 is formed in the casing 111 and behind the load port 114.

(Substrate container transfer device)
A pod transfer device (substrate container transfer device) 118 is installed near the load port 114 in the housing 111. A rotary pod shelf (substrate container mounting shelf) 105 is installed at a further depth of the pod transfer device 118 in the casing 111 and above a substantially central portion of the casing 111 in the front-rear direction.

  The pod transfer device 118 includes a pod elevator (substrate container lifting mechanism) 118a that can be moved up and down while holding the pod 110, and a pod transfer mechanism (substrate container transfer mechanism) 118b as a transfer mechanism. The pod transport device 118 transports the pods 110 between the load port 114, the rotary pod shelf 105 described later, and the pod opener 121 by continuous operation of the pod elevator 118a and the pod transport mechanism 118b. It is configured.

(First purge part)
A first purge unit (mainly mounted) that purges the atmosphere in the pod 110 near the load port 114, for example, above the load port 114 in the casing 111, and sets the oxygen concentration in the pod 110 to a predetermined control value or less. A main replacement shelf 160 is provided. Here, purging means lowering the oxygen concentration in the pod 110 as will be described later. The main replacement shelf 160 is provided with a main purge port shown in FIG. The main purge port is provided with a main gas supply port 410 and a main gas exhaust port 420. A gas supply pipe 411 is connected to the main gas supply port 410. The gas supply pipe 411 is provided with a main flow rate controller 412 so that the flow rate is controlled by a controller 280 described later. The main flow rate control device 412 includes one or both of a valve (not shown) and a mass flow controller (not shown). A gas exhaust pipe 421 is connected to the main gas exhaust port. Further, a main exhaust valve 422 may be provided in the gas exhaust pipe 421 so that the gas exhaust amount can be adjusted. Further, the gas exhaust pipe 421 may be provided with an oxygen concentration meter 423 for detecting the oxygen concentration in the exhaust gas from the pod 110 or from the pod 110. Further, a dew point meter 424 for detecting the humidity in the exhaust gas from the pod 110 or from the pod 110 may be provided.

(Second purge part)
A sub-replacement shelf (pod shelf) 105 serving as a second purge unit (sub-mounting unit) is provided in the housing 111 and behind the substrate container transfer chamber 150. The pod shelf 105 is provided with a plurality of shelf plates 117 (substrate container mounting table), and is configured to store a plurality of pods 110. Further, each of the plurality of shelf boards is provided with a sub-purge port, and by purging (gas replacement) the inside of the pod 110, the oxygen concentration in the pod 110 can be reduced to a predetermined management value or less. The pod shelf 105 may be configured to be a rotary type. In the rotary pod shelf 105, in addition to a plurality of shelf plates 117, a support column 116 that is vertically provided and intermittently rotates in a horizontal plane is provided. As shown in FIG. 5, the auxiliary purge port is provided with an auxiliary gas supply port 510 and an auxiliary gas exhaust port 520. The sub gas supply port 510 is provided with a gas supply pipe 511. The gas supply pipe 511 is provided with a sub-flow rate control device 512 so that the flow rate can be controlled by a controller 280 described later. The auxiliary flow rate control device 512 is configured by one or both of a valve (not shown) and a mass flow controller (not shown). A gas exhaust pipe 521 is provided at the auxiliary gas exhaust port. The gas exhaust pipe 521 may be provided with a sub exhaust valve 522 so that the exhaust amount can be adjusted. Further, the gas exhaust pipe 521 may be provided with an oxygen concentration meter 523 for detecting the oxygen concentration in the pod 110 or in the exhaust gas. Further, a dew point meter 524 for detecting the humidity in the pod 110 or in the exhaust gas may be provided.
The first purge unit and the second purge unit described above constitute a purge device suitable for the substrate processing apparatus 100.

(Predetermined control value)
A first management value and a second management value are set as predetermined management values for the oxygen concentration. The first management value and the second management value data are recorded on a recording medium, which will be described later, and can be changed according to a calculation result in a CPU 280a, which will be described later. The first management value and the second management value can be set by data input from the input device 281. Preferably, the first management value is set lower than the second management value. More preferably, the first management value is 600 ppm, and the second management value is 600 ppm or more and 1000 ppm or less. The main mounting unit is purged to be equal to or lower than the first management value, and the sub-loading unit is purged to be equal to or lower than the second management value (hereinafter referred to as purging to be equal to or lower than the first management value. (1 purge and setting it below the second management value is called second purge).

  In the first purge, an inert gas is supplied from the main purge port into the pod 110 at a first flow rate. In the second purge, an inert gas is supplied into the pod 110 from the sub-purge port at a second flow rate. Here, the first flow rate is 20 slm to 100 slm, for example, 50 slm. The second flow rate is 0.5 slm to 20 slm, for example, 5 slm.

(How to adjust the oxygen concentration in the pod)
In adjusting the oxygen concentration in the pod 110, the oxygen concentration meter 423, 523 described above is used to detect the oxygen concentration in the pod 110 or the oxygen concentration in the exhaust gas, and feedback control is performed based on the detected oxygen concentration value. May be. In addition, a relationship between the supply amount and supply time of the inert gas and the oxygen concentration in the pod 110 is obtained in advance, and the adjustment can be made by setting the supply amount and supply time of the inert gas based on the relationship. May be.

  A sub-housing 119 is provided at a lower portion in the housing 111 from a substantially central portion in the front-rear direction in the housing 111 to a rear end. A pair of wafer loading / unloading ports (substrate loading / unloading ports) 120 that transfer the wafer 200 into and out of the sub-casing 119 are provided on the front wall 119a of the sub-casing 119 so as to be arranged vertically in two stages. Yes. A pod opener (substrate container opening / closing unit) 121 is installed at each of the upper and lower wafer loading / unloading ports 120.

  Each pod opener 121 includes a pair of mounting bases 122 on which the pod 110 is mounted, and a cap attaching / detaching mechanism (lid attaching / detaching mechanism) 123 that attaches / detaches a cap (cover) of the pod 110. The pod opener 121 is configured to open and close the wafer loading / unloading port of the pod 110 by attaching / detaching the cap of the pod 110 placed on the placing table 122 by the cap attaching / detaching mechanism 123.

  In the sub casing 119, a transfer chamber 124 is configured as a substrate transfer chamber that is fluidly isolated from the space in which the pod transfer device 118, the rotary pod shelf 105, and the like are installed. A wafer transfer mechanism (substrate transfer mechanism) 125 is installed in the front region of the transfer chamber 124. The wafer transfer mechanism 125 includes a wafer transfer device (substrate transfer device) 125a that can rotate or linearly move the wafer 200 in the horizontal direction, and a wafer transfer device elevator (substrate transfer device lifting mechanism) 125b that moves the wafer transfer device 125a up and down. 1). The wafer transfer apparatus elevator 125b is installed between the right end of the front area of the transfer chamber 124 and the right end of the case 111 of the sub case 119 (see FIG. 1). The wafer transfer device 125 a includes a tweezer (substrate holding body) 125 c as a placement unit for the wafer 200. The wafer 200 is configured to be loaded (charged) and unloaded (discharged) from the boat (substrate holder) 217 by the continuous operation of the wafer transfer device elevator 125b and the wafer transfer device 125a.

  In the rear area of the transfer chamber 124, a standby unit 126 that houses and waits for the boat 217 is configured. A processing container 202 for processing the wafer 200 is provided above the standby unit 126. The lower end portion of the processing vessel 202 is configured to be opened and closed by a furnace port shutter (furnace port opening / closing mechanism) 147. The configuration of the processing container 202 will be described later.

  A boat elevator (substrate holder lifting mechanism) 115 for raising and lowering the boat 217 is installed between the right end of the standby unit 126 of the sub-housing 119 and the right end of the housing 111 (FIG. 1). reference). An arm 128 as a connecting tool is connected to the elevator platform of the boat elevator 115. A seal cap 219 as a furnace port lid is horizontally installed on the arm 128. The seal cap 219 is configured to support the boat 217 vertically and to close the lower end portion of the processing container 202.

  The boat 217 is configured to hold a plurality of wafers 200 (for example, about 50 to 125 wafers) horizontally in a state where the centers are aligned in the vertical direction.

  As shown in FIG. 1, a clean atmosphere or clean air, which is an inert gas, is supplied to the left end of the transfer chamber 124 opposite to the wafer transfer device elevator 125 b side and the boat elevator 115 side. A clean unit 134 composed of a fan and a dustproof filter is installed. Is the clean air 133 blown out from the clean unit 134 circulated around the boat 217 in the notch aligning device, the wafer transfer device 125a, and the standby unit 126, and then sucked by the duct and discharged to the outside of the casing 111? Alternatively, it is circulated to the primary side (supply side) that is the suction side of the clean unit 134 and is blown out again into the transfer chamber 124 by the clean unit 134.

(Configuration of processing container)
Next, the configuration of the processing container 202 according to the present embodiment will be described with reference to FIG. FIG. 3 is a longitudinal sectional view of the processing container 202 provided in the substrate processing apparatus 100 according to the present embodiment.

(Processing container)
As shown in FIG. 3, the processing vessel 202 includes a reaction tube 203. The reaction tube 203 is made of a heat-resistant material such as quartz (SiO 2) or silicon carbide (SiC), and is formed in a cylindrical shape with an upper end and a lower end opened. A processing chamber 201 for processing a wafer 200 as a substrate is formed in the cylindrical hollow portion of the reaction tube 203. The processing chamber 201 is configured to accommodate a boat 217 that holds the wafers 200.

  A boat 217 as a substrate holder is configured to hold a plurality of wafers 200 in a multi-stage by aligning the wafers 200 in a horizontal posture with their centers aligned. The boat 217 is made of, for example, either quartz or silicon carbide, or a heat resistant material such as quartz and silicon carbide. A heat insulator 216 made of a heat-resistant material such as quartz or silicon carbide or quartz and silicon carbide is provided at the lower part of the boat 217, and heat from the heater 207, which will be described later, is applied to the seal cap 219 side. It is configured to be difficult to communicate.

  Below the reaction tube 203, a seal cap 219 is provided as a furnace port lid capable of airtightly closing the lower end opening of the reaction tube 203. The seal cap 219 comes into contact with the lower end of the reaction tube 203 from the lower side in the vertical direction. The seal cap 219 is made of a metal such as stainless steel and is formed in a disk shape. On the upper surface of the seal cap 219, an O-ring as a seal member that comes into contact with the lower end of the reaction tube 203 is provided. As described above, the seal cap 219 is configured to be lifted and lowered in the vertical direction by the boat elevator 115 as a lifting mechanism vertically installed outside the reaction tube 203. By moving the seal cap 219 up and down, the boat 217 can be transferred into and out of the processing chamber 201.

  A rotation mechanism 254 that rotates the boat 217 is provided near the center of the seal cap 219 and on the side opposite to the processing chamber 201. The rotation shaft of the rotation mechanism 254 passes through the seal cap 219 and supports the boat 217 from below. The rotation mechanism 254 is configured to rotate the wafer 200 by rotating the boat 217.

  A conveyance control unit 275 is electrically connected to the rotation mechanism 254 and the boat elevator 115. The conveyance control unit 275 is configured to control the rotation mechanism 254 and the boat elevator 115 so as to perform a desired operation at a desired timing. The transfer control unit 275 is also electrically connected to the pod elevator 118a, the pod transfer mechanism 118b, the pod opener 121, the wafer transfer device 125a, the wafer transfer device elevator 125b, and the like. These are controlled so as to perform a desired operation. The boat elevator 115, the rotation mechanism 253, the pod elevator 118a, the pod transfer mechanism 118b, the pod opener 121, the wafer transfer device 125a, and the wafer transfer device elevator 125b mainly constitute the transfer system according to this embodiment.

  A heater 207 as a heating unit for heating the wafer 200 in the reaction tube 203 is provided outside the reaction tube 203 so as to surround the side wall surface of the reaction tube 203. The heater 207 has a cylindrical shape and is vertically installed by being supported by a heater base as a holding plate.

  In the reaction tube 203, a temperature sensor 225 such as a thermocouple is installed as a temperature detector. A temperature controller 274 is electrically connected to the heater 207 and the temperature sensor 225. Based on the temperature information detected by the temperature sensor 225, the temperature control unit 274 adjusts the power supplied to the heater 207 so that the temperature in the processing chamber 201 becomes a desired temperature distribution at a desired timing. It is configured.

  A process gas supply nozzle 220 is provided between the reaction tube 203 and the heater 207. The processing gas supply nozzle 220 is disposed along the side of the outer wall of the reaction tube 203. The upper end (downstream end) of the processing gas supply nozzle 220 is airtightly provided at the top of the reaction tube 203 (the opening formed at the upper end of the reaction tube 203 described above). The processing gas supply nozzle 220 located at the upper end opening of the reaction tube 203 is provided with a plurality of processing gas supply holes.

  A downstream end of a processing gas supply pipe 221 for supplying a processing gas is connected to an upstream end of the processing gas supply nozzle 220. A processing gas supply source 222, a mass flow controller (MFC) 223 as a flow rate controller, and a valve 224 as an on-off valve are connected to the processing gas supply pipe 221 in order from the upstream side.

  A gas flow rate control unit 276 is electrically connected to the MFC 223. The gas flow rate control unit 276 is configured to control the MFC 223 so that the flow rate of the gas supplied into the processing chamber 201 becomes a desired flow rate at a desired timing.

  A processing gas supply system is mainly configured by the processing gas supply pipe 221, the MFC 223, and the valve 224. The processing gas supply nozzle 220 and the processing gas supply source 222 may be included in the processing gas supply system.

  An upstream end of an exhaust pipe 231 that exhausts the atmosphere in the reaction pipe 203 (processing chamber 201) is connected to the reaction pipe 203. In the exhaust pipe 231, in order from the upstream side, a pressure sensor 232 as a pressure detector (pressure detection unit) for detecting the pressure in the processing chamber 201, for example, an APC (Auto Pressure Controller) valve 233 as a pressure regulator, and A vacuum pump 234 is provided as a vacuum exhaust device. The APC valve 233 is an open / close valve that can open and close the valve to stop evacuation and evacuation in the reaction tube 203, and further adjust the valve opening to adjust the pressure in the reaction tube 203. is there.

  A pressure control unit 277 is electrically connected to the APC valve 233 and the pressure sensor 232. The pressure control unit 277 is configured to control the APC valve 233 based on the pressure value detected by the pressure sensor 232 so that the pressure in the processing chamber 201 becomes a desired pressure at a desired timing. Yes.

  A processing gas exhaust unit is mainly configured by the exhaust pipe 231, the pressure sensor 232, and the APC valve 233. Note that the vacuum pump 234 may be included in the processing gas exhaust unit.

(Control part)
As shown in FIG. 6, the controller 280, which is a control unit (control means), is configured as a computer having a CPU (Central Processing Unit) 280a, a RAM (Random Access Memory) 280b, a storage device 280c, and an I / O port 280d. Has been. The RAM 280b, the storage device 280c, and the I / O port 280d are configured to exchange data with the CPU 280a via the internal bus 280e. For example, a touch panel, a mouse, a keyboard, an operation terminal, or the like may be connected to the controller 280 as the input / output device 281. Further, for example, a display or the like may be connected to the controller 280 as a display unit.

  The storage device 280c is configured by, for example, a flash memory, an HDD (Hard Disk Drive), a CD-ROM, or the like. In the storage device 280c, a control program that controls the operation of the substrate processing apparatus 100, a process recipe that describes the procedure and conditions of the substrate processing, and the like are stored in a readable manner. Note that the process recipe is a combination of the controller 280 so that predetermined procedures can be obtained by causing the controller 280 to execute each procedure in the substrate processing process described later, and functions as a program. Hereinafter, the process recipe, the control program, and the like are collectively referred to as simply a program. When the term “program” is used in this specification, it may include only a process recipe alone, may include only a control program alone, or may include both. The RAM 280b is configured as a memory area (work area) in which a program, data, and the like read by the CPU 280a are temporarily stored.

  The I / O port 280d includes the mass flow controllers 210 and 223, the valves 211 and 224, the shutters 213 and 214, the APC valve 233, the heater 207, the temperature sensor 225, the boat rotation mechanism 254, the main flow control device 412, and the main exhaust valve. 422, a sub flow control device 512, a sub exhaust valve 522, a vacuum pump 234, a pod opener 121, a load port 114, a pod transfer device 118, a wafer transfer mechanism 125, a clean air unit 134, and the like.

  The CPU 280a is configured to read and execute a control program from the storage device 280c, and to read a process recipe from the storage device 280c in response to an operation command input from the input / output device 281 or the like. Then, the CPU 280a adjusts the temperature adjustment operation of the heater 207 based on the temperature sensor 207 through the signal line A through the signal line A, the rotation speed adjustment operation of the boat rotation mechanism 254 through the signal line B, and the signal line C so as to follow the contents of the read process recipe. Various gas flow rate adjusting operations by the mass flow controllers 210 and 223, opening and closing operations of the valves 211 and 224 through the signal line D, the shutting operation of the shutters 213 and 214, the opening adjusting operation of the APC valve 233, and the start / stop of the vacuum pump 234 And the like are controlled.

  The controller 280 is not limited to being configured as a dedicated computer, and may be configured as a general-purpose computer. For example, an external storage device (for example, a magnetic tape, a magnetic disk such as a flexible disk or a hard disk, an optical disk such as a CD or a DVD, a magneto-optical disk such as an MO, a Universal Serial Bus (USB) memory (USB Flash)) drive) and a non-volatile semiconductor memory such as a memory card 282, and the controller 280 according to the present embodiment can be configured by installing a program in a general-purpose computer using the external storage device 282. it can. The means for supplying the program to the computer is not limited to supplying the program via the external storage device 282. For example, the program may be supplied without using the external storage device 282 by using communication means such as the Internet or a dedicated line. Note that the storage device 280c and the external storage device 282 are configured as computer-readable recording media. Hereinafter, these are collectively referred to simply as a recording medium. Note that when the term “recording medium” is used in this specification, it may include only the storage device 280c alone, may include only the external storage device 282 alone, or may include both.

(Operation of substrate processing equipment and transfer process)
Next, the operation of the substrate processing apparatus 100 according to the present embodiment, the substrate container transporting step, and the substrate transporting step will be described mainly with reference to FIGS. 1, 2, and 7. The transport process of the substrate container according to the present embodiment is as shown in FIG.

(Transport from the load port (T110))
As shown in FIGS. 1 and 2, when the pod 110 is supplied to the load port 114, the pod loading / unloading port 112 is opened by the front shutter 113. Then, the pod 110 on the load port 114 is carried into the housing 111 from the pod carry-in / out port 112 by the pod carrying device 118.

(Wafer count (T120))
The pod 110 carried into the housing 111 is transported to the pod opener 121 by the pod transport device 118 and transported onto the mounting table 122 of the pod opener 121. The wafer loading / unloading port 120 of the pod opener 121 is closed by a cap attaching / detaching mechanism 123, and clean air 133 is circulated and filled in the transfer chamber 124. For example, when the inside of the transfer chamber 124 is filled with clean air 133 such as an inert gas, the oxygen concentration in the transfer chamber 124 becomes, for example, 20 ppm or less, which is much higher than the oxygen concentration in the housing 111 that is an atmospheric atmosphere. It is set to be low.

  The pod 110 mounted on the mounting table 122 is pressed against the opening edge of the wafer loading / unloading port 120 in the front wall 119a of the sub-housing 119, and the cap is removed by the cap attaching / detaching mechanism 123. Then, the wafer loading / unloading port is opened. When the wafer loading / unloading port is opened, the inside of the pod 110 and the inside of the pod opener 121 are purged with an inert gas. In the purging at this time, it is preferable that the oxygen concentration in the pod 110 is purged so as to become the first management value. More preferably, it is purged to 20 ppm or less. Thereafter, the count of the number of wafers 200 in the pod 110 and the state of the wafers 200 are checked by the wafer number counter device. After the number of wafers 200 is counted, the cap is closed by the cap attaching / detaching mechanism 123.

(Second purge (T130))
After the number of wafers 200 in the pod 110 is counted by the pod opener 121, the pod 110 is transferred to the pod shelf 105 and placed thereon. The pod 110 placed on the pod shelf 105 is second purged by the secondary purge port so that the oxygen concentration in the pod 110 is equal to or lower than the second management value. The second purge may be performed continuously while being placed, or may be performed intermittently at an arbitrary time. Further, the process of transporting the pod 110 from the load port 114 to the pod shelf 105 may be repeated by the number of pods that can be placed on the pod shelf 105.

(First purge (pre-purge) (T140))
Of the plurality of pods 110 placed on the pod shelf 105, the pod 110 to be deposited is transported from the pod shelf 105 to the main replacement shelf 160. The pod 110 transferred to the main replacement shelf 160 is placed on the main replacement shelf 160. The pod 110 placed on the main placement shelf 160 is first purged (pre-purged) by a main purge port provided in the main placement section 160.

(Load wafer into boat (T150))
The first purged pod 110 on the main mounting shelf 160 is transferred from the main mounting shelf 160 to the pod opener 121, and is transferred onto the mounting table 122 of the pod opener 121. The pod 110 mounted on the mounting table 122 is pressed against the opening edge of the wafer loading / unloading port 120 in the front wall 119a of the sub-housing 119, and the cap is removed by the cap attaching / detaching mechanism 123. Then, the wafer loading / unloading port is opened. At this time, it is released without purging as in T120. When the pod 110 is opened, the wafer is picked up from the inside of the pod 110 through the wafer loading / unloading port by the tweezer 125c of the wafer transfer device 125a, positioned in the circumferential direction by the notch alignment device, and then located behind the transfer chamber 124. It is carried into the standby unit 126 and loaded (charged) into the boat 217. The wafer transfer device 125 a loaded with the wafer 200 in the boat 217 returns to the pod 110 and loads the next wafer 200 into the boat 217.

While the wafer 200 is loaded from one (upper or lower) pod opener 121 to the boat 217 by the wafer transfer mechanism 125, another pod is placed on the mounting table 122 of the other (lower or upper) pod opener 121. 110 is transferred from the rotary pod shelf 105 by the pod transfer device 118, and the opening operation of the pod 110 by the pod opener 121 is performed simultaneously with the loading operation of the wafer 200. The empty pod 110 is transported from the pod opener 121 to the pod shelf 105 and placed on the pod shelf 105. The empty pod 110 placed on the pod shelf 105 may be subjected to the second purge described above.
In this way, wafer loading T150 to the boat is performed.

  When a predetermined number of wafers 200 are loaded into the boat 217, the lower end portion of the processing container 202 closed by the furnace port shutter 147 is opened. Subsequently, the seal cap 219 is lifted by the boat elevator 115, so that the boat 217 holding the wafer 200 is loaded into the processing container 202 (boat loading).

  After boat loading, an arbitrary substrate processing step described later is performed on the wafer 200 in the processing container 202. After the processing, the boat 217 loaded with the wafers 200 is unloaded from the processing chamber 201 (boat unloading). After the boat unloading, the substrate unloading process like the flow shown in FIG. 8 is performed except for the alignment of the wafer 200 by the notch aligning device.

(Substrate unloading process)
Next, the substrate carry-out process will be described with reference to FIG.

(Transport of empty pod (T210))
After boat unloading, the empty pod 110 is transferred from the pod shelf 105 to the pod opener 121.

(Wafer storage in empty pod (T220))
When the pod 110 is placed on the pod opener 121, the processed wafers 200 are accommodated in the pod 110 in the reverse procedure of the wafer loading T50 process on the boat. The pod 110 that has been received is transported again to the pod shelf 105. From the accommodation of the wafer 200 into the pod 110, the re-transfer of the pod shelf 105 of the pod 110 is repeated until all the wafers 200 processed by the boat 217 are accommodated. For example, when 100 wafers 200 are loaded on the boat 217 and the pod 110 can hold 20 wafers 200, the process is repeated five times. In this step, the first purge may be performed by the pod opener 121 when the processed wafer 200 is accommodated in the pod 110.

(Unload from load port (T230))
After a predetermined number of pods 110 containing processed wafers 200 are re-transferred to the pod shelf 105, the pods 110 are transferred from the pod 105 to the load port 114.
The pod 110 conveyed to the load port 114 is carried out of the casing 111 from the load port 114. The process of carrying the pod 110 out of the casing 111 from the pod shelf 105 via the load port 114 is repeated a predetermined number of times as described above.

In this way, the pod 110 and the substrate are transferred.
The empty pod transport T210 may be repeated until all the pods stored in the pod shelf 105 are unloaded from the load port to the unloading T230, or an arbitrary number of pods may be unloaded. Alternatively, after processing the processed wafer 200 in the empty pod 110, the pod 110 may be transferred to the load port 114 without being transferred again to the pod 105 and carried out of the housing 111.

  Next, control of the oxygen concentration in the pod 110 will be described with reference to FIG. FIG. 9A shows an example of oxygen concentration transition in the pod during the first purge. FIG. 9B is a diagram showing an example of oxygen concentration transition in the pod during the second purge. As shown in FIG. 9A, in the first purge, purging is performed from a state where the oxygen concentration in the pod 110 is higher than the first management value to the first management value or less. In the second purge, as shown in FIG. 9B, the purge is performed so as to be equal to or lower than the second management value higher than the first management value.

(Substrate processing process)
Next, a substrate processing process performed as one process of the semiconductor device manufacturing process will be described with reference to FIG. Such a substrate processing step is performed by the substrate processing apparatus 100 described above. Here, as an example, a film forming process for forming a thin film on the wafer 200 by a CVD (Chemical Vapor Deposition) method will be described. In the following description, the operation of each unit constituting the substrate processing apparatus 100 is controlled by the controller 280.

(Substrate carrying-in process (S10))
First, a plurality of wafers 200 are loaded into the boat 217 (wafer charge), and the boat 217 holding the plurality of wafers 200 is lifted by the boat elevator 115 and loaded into the reaction tube 203 (inside the processing chamber 201) (boat). Loading). In this state, the furnace port that is the lower end opening of the reaction tube 203 is sealed by the seal cap 219.

(Pressure / temperature adjustment step (S20))
The processing chamber 201 is evacuated by a vacuum pump 234 so that a desired pressure (degree of vacuum) is obtained. At this time, the pressure in the reaction tube 203 is measured by the pressure sensor 232, and the APC valve 233 (the valve opening) is feedback-controlled based on the measured pressure value (pressure adjustment). In addition, the inside of the processing chamber 201 is heated by the heater 207 so that the inside of the processing chamber 201 has a desired temperature (for example, 500 ° C. to 1200 ° C., preferably 1000 ° C.). At this time, feedback control of the power supplied to the heater 207 is performed based on the temperature value detected by the temperature sensor 225 (temperature adjustment).

  Further, while heating the inside of the processing chamber 201, the boat rotation mechanism 254 is operated to start the rotation of the boat 217, that is, the rotation of the wafer 200. At this time, the rotation speed of the boat 217 is controlled by the controller 280. Note that the rotation of the boat 217 by the boat rotation mechanism 254 continues at least until the film forming step (S30) described later is completed.

(Film formation process (S30))
When the inside of the processing chamber 201 reaches a desired pressure and a desired temperature, supply of the processing gas from the processing gas supply pipe 221 into the reaction pipe 203 is started. That is, the processing gas is supplied from the processing gas supply source 222 into the reaction tube 203 while the valve 224 is opened and the flow rate is controlled by the MFC 223. The processing gas contacts the surface of the wafer 200 when passing through the processing chamber 201, and a thin film is deposited (deposited) on the surface of the wafer 200 by a thermal CVD reaction. While supplying the processing gas into the reaction tube 203, the opening degree of the APC valve 233 is adjusted, and the vacuum pump 234 is evacuated. When a preset processing time has elapsed, the valve 224 is closed and the supply of the processing gas into the reaction tube 203 is stopped.

(Cooling step (S40))
When the film forming step (S30) is completed, the power supply to the heater 207 is stopped and the cooling step (S40) is started. In the cooling step (S40), supply of the cooling medium to the cooling medium flow path 205, discharge of the cooling medium from the cooling medium flow path 205, and the like are performed.

  When the temperature of the processing container 202 reaches a temperature at which the wafer 200 can be unloaded from the processing container 202 (processing chamber 201) (for example, 600 ° C. or less, preferably 600 ° C.), supply of the cooling medium into the cooling medium channel 205 Is stopped and the cooling step (S40) is terminated.

(Return to atmospheric pressure / Board carry-out process (S50, S60))
When the cooling step (S40) is completed, the opening degree of the APC valve 233 is adjusted to return the pressure in the processing chamber 201 to atmospheric pressure. Then, the boat 217 is carried out (boat unloading) from the processing chamber 201 by a procedure reverse to the procedure shown in the substrate carry-in process described above. Then, the processed wafers 200 are detached from the boat 217 (wafer discharge) and accommodated in the pod 110, and the substrate processing process according to the present embodiment is completed.

(Effect according to this embodiment)
According to the present embodiment, one or more effects shown below are produced.

(A) According to the present embodiment, the gas system can be simplified and the cost of parts used can be reduced by dividing the purge in the pod into the main mounting portion and the sub mounting portion.

(B) According to the present embodiment, by performing the pre-purge before the transfer to the pod opener, the purge time required for opening and closing the cap in the pod opener can be omitted, and the transfer throughput can be improved.

(C) According to the present embodiment, the oxygen concentration in the pod 110 can be maintained at a predetermined control value, and oxygen adsorption and natural oxidation on the metal film exposed on the surface of the substrate accommodated in the pod. Formation of the film can be suppressed, and the manufacturing quality of the semiconductor device can be improved.

(D) According to the present embodiment, the oxygen concentration in the pod 110 is purged with an inert gas so as to become the first management value in the main mounting unit and the second management value in the sub mounting unit, The amount of inert gas used can be reduced.

(E) According to the present embodiment, since the number of wafers in the pod 110 and the wafer state are checked immediately after being loaded into the housing 111, the state of the wafer can be checked immediately, and there is an abnormality such as a defect in the wafer. Therefore, the purging of the pod having the gas can be omitted, and the amount of the inert gas used for the purging can be reduced.

(F) According to the present embodiment, when the first purge is performed, the inert gas is supplied into the pod 110 at the first flow rate (20 slm to 100 slm), thereby suppressing generation of particles in the pod 110. However, the inside of the pod can be set to a low oxygen concentration environment.

(G) According to the present embodiment, the oxygen concentration in the pod 110 can be maintained at a predetermined control value, and even if the diameter of the wafer 200 becomes a size such as 450 mm, it is locally applied to the wafer 200. Formation of a natural oxide film can be suppressed, and the manufacturing quality of the semiconductor device can be improved.

(H) According to the present embodiment, the oxygen concentration in the pod 110 can be maintained at a predetermined control value, and even if a high aspect ratio trench is formed on the wafer 200 and the surface area on the substrate is increased. The formation of a local natural oxide film can be suppressed, and the manufacturing quality of the semiconductor device can be improved.

(I) According to the present embodiment, the oxygen concentration is increased while the pod 110 is moved from the main mounting portion to another place by performing the purging to reduce the oxygen concentration to the first control value or less by the first purge. Even if it does, it can prevent becoming higher than a 1st management value, or becoming 2nd management value or more, and formation of the natural oxide film to the wafer 200 can be suppressed.

<Other Embodiments of the Present Invention>
As mentioned above, although embodiment of this invention was described concretely, this invention is not limited to the above-mentioned embodiment, It can change variously in the range which does not deviate from the summary.

  For example, the conveyance process may be performed as in the flow shown in FIG. The conveyance process shown in FIG. 11 will be described.

(Import from load port (T310))
When the pod 110 is placed on the load port 114, the pod loading / unloading port 112 is opened by the front shutter 113. The pod 110 on the load port 114 is carried into the housing 111 from the pod carry-in / out port 112 by the pod carrying device 118.

(Second purge T320))
The pod 110 carried into the housing 111 from the load port 114 is transported to the pod shelf 105 by the pod transport device 118. This transfer is repeated by the number of pods that can be placed on the pod shelf 105 or the number of pods necessary for the substrate processing step. The pod 110 placed on the pod shelf 105 is subjected to the second purge described above. If the time for placing on the pod shelf 105 is short, the second purge may not be performed.

(First purge (T330))
The pod 110 placed on the pod shelf 105 is transported from the pod shelf 105 to the main placement shelf 160 and placed on the main placement shelf 160. In the pod 110 placed on the main placement shelf 160, the first purge described above is performed.

(Wafer Count and Wafer Loading into Boat (T340))
The pod 110 that has been purged so that the oxygen concentration in the pod 110 is equal to or lower than the first control value in the main mounting shelf 160 is transported from the main mounting shelf 160 to the pod opener 121, and on the mounting table 122 of the pod opener 121. Placed on. The pod 110 mounted on the mounting table 122 is pressed against the opening edge of the wafer loading / unloading port 120 in the front wall 119a of the sub-housing 119, and the cap is removed by the cap attaching / detaching mechanism 123. Then, the wafer loading / unloading port is opened. At this time, it is opened without purging as in T120. When the pod 110 is opened, the number of wafers 200 in the pod 110 and the state of the wafers 200 are checked by a wafer number counter device (not shown). After the number of wafers 200 is counted, the wafers 200 are loaded into the boat 217 by the above-described procedure of T150.
When loading is completed, boat loading is performed as described above. After boat loading, the above-described substrate processing step is performed, and the above-described substrate unloading step is performed.

(Effect according to this embodiment)
According to this embodiment, one or more effects shown in the above-mentioned embodiment are produced. In addition, one or more effects described below are also exhibited.

(A) According to this embodiment, after all the pods necessary for processing are placed on the pod shelf, the main placement shelf is purged to the first control value or less, and the wafer is loaded onto the boat with the pod opener. Accordingly, the standby time of the pod transfer device 118 can be reduced as compared with the above-described embodiment, and the transfer throughput can be improved.

(B) According to the present embodiment, after the inside of the pod 110 is purged to the first management value or less, the pod opener 121 counts the number of wafers and performs the wafer loading process T340 on the boat. The number of purges of the pod 110 necessary for opening and closing the 110 lid can be reduced. Further, since the purge by the pod opener 121 can be omitted, the time for transporting the substrate from the main mounting shelf to the pod opener 121 can be shortened.

<Still another embodiment of the present invention>
As mentioned above, although other embodiment of this invention was described concretely, this invention is not limited to the above-mentioned embodiment, It can change variously in the range which does not deviate from the summary.

  For example, the conveyance may be performed as in the flow shown in FIG. Hereinafter, the conveyance process shown in FIG. 12 will be described.

(Transport from the load port (T410))
Since it is performed in the same manner as T100 described above, description thereof is omitted.

(First purge (T420))
The pod 110 carried into the housing 111 is transported to the main replacement shelf 160 by the pod transport device 118. The pod 110 conveyed to the main replacement shelf 160 is first purged in the same manner as T140 described above.

(Wafer count (T430))
The pod 110 purged in the main replacement shelf 160 is transferred from the main placement shelf 160 to the pod opener 121 and placed on the placement table 122 of the pod opener 121. The pod 110 mounted on the mounting table 122 is pressed against the opening edge of the wafer loading / unloading port 120 in the front wall 119a of the sub-housing 119, and the cap is removed by the cap attaching / detaching mechanism 123. Then, the wafer loading / unloading port is opened. At this time, it is opened without purging as in T120. When the pod 110 is opened, the number of wafers 200 in the pod 110 and the state of the wafers 200 are checked by a wafer number counter device (not shown).

(Second purge (T440))
The pod 110 whose wafer number and state have been checked is transferred from the pod opener 121 to the pod shelf 105, and the second purge is performed on the pod shelf 105. This purging may be performed continuously while being placed, or may be performed intermittently.

(Load wafer into boat (T450))
The pod 110 waiting on the pod shelf 105 is transferred again to the pod opener 121, and the wafers in the pod 110 are loaded into the boat 217.

(Effect according to this embodiment)
According to this embodiment, one or more effects shown in the above-mentioned embodiment are produced. In addition, one or more effects described below are also exhibited.

(A) According to the present embodiment, the main replacement shelf 160 purges the inside of the pod 110 to be equal to or lower than the first management value, and then the pod opener 121 transports the cap. In this case, the necessary purge can be omitted, and the conveyance throughput can be improved.

(B) According to the present embodiment, the purge time at the time of transfer from the pot shelf 105 to the boat 217 can be shortened, and since there is no wafer count time, the substrate transfer time from the pod shelf 105 to the boat 217 is shortened. be able to.

(C) According to the present embodiment, even if the pod 110 having a high oxygen concentration is carried into the housing 111 from the load port 114, the pod 110 is conveyed from the load port 114 to the main replacement shelf 160, and the first purge is performed. By performing the process, the time during which the oxygen concentration is high can be reduced, and the formation of a natural oxide film can be suppressed.

<Still another embodiment of the present invention>
As mentioned above, although other embodiment of this invention was described concretely, this invention is not limited to the above-mentioned embodiment, A various change is possible in the range which does not deviate from the summary.

  For example, the conveyance may be performed as in the flow shown in FIG. Hereinafter, the conveyance process shown in FIG. 13 will be described.

(Transport from the load port (T510))
Since it is performed in the same manner as T100 described above, description thereof is omitted.

(First purge (T520))
The description is omitted because it is performed in the same manner as T420 described above.

(Second purge (T530))
The pod 110 purged to have the oxygen concentration in the pod 110 below the first management value in the main replacement shelf 160 is transferred from the main replacement shelf 160 to the pod shelf 105. The pod 110 placed on the pod shelf 105 is second purged. This purging may be performed continuously during standby or may be performed intermittently.

(Wafer Count and Wafer Loading into Boat (T540))
The pod 110 waiting on the pod shelf 105 is conveyed to the pod opener 121. The wafer 200 is transferred from the pod 110 placed on the pod opener 121 to the boat 217, and the substrate processing is performed as described above.

(Effect according to this embodiment)
Even in the present embodiment, one or a plurality of effects shown in the above-described embodiments are exhibited.

<Still another embodiment of the present invention>
As mentioned above, although other embodiment of this invention was described concretely, this invention is not limited to the above-mentioned embodiment, A various change is possible in the range which does not deviate from the summary.

  For example, the conveyance may be performed as in the flow shown in FIG. Hereinafter, the conveyance process shown in FIG. 14 will be described.

(Transport from the load port (T610))
The description is omitted because it is performed in the same manner as T110 described above.

(Wafer count (T620))
Since it is performed in the same manner as T120 described above, description thereof is omitted.

(First purge (T630))
The pod 110 on which the number and state of wafers are checked is transferred to the main replacement shelf 160. The pod 110 conveyed to the main replacement shelf 160 is first purged.

(Second purge (T640))
The pod 110 purged below the first management value is transported from the main replacement shelf 160 to the pod shelf 105 and second purged. This purging may be performed continuously while being placed, or may be performed intermittently.

(Load wafer into boat (T650))
The pod 110 waiting on the pod shelf 105 is transferred again to the pod opener 121, and the wafers in the pod 110 are loaded into the boat 217.

(Effect according to this embodiment)
Even in the present embodiment, one or a plurality of effects shown in the above-described embodiments are exhibited.

<Still another embodiment of the present invention>
As mentioned above, although other embodiment of this invention was described concretely, this invention is not limited to the above-mentioned embodiment, A various change is possible in the range which does not deviate from the summary.

  For example, the conveyance may be performed as in the flow shown in FIG. FIG. 15 is a process in which the first purge process of FIG. 14 is omitted. It is also possible to carry in this way. However, since the purge in the pod opener 121 is longer than the purge time in the main replacement shelf 160, preferably, the oxygen concentration in the pod is set to be equal to or lower than the first management value in the main replacement shelf 160 as in the above-described embodiment. It is preferable to perform the purging step as described above.

  In the present invention, only the oxygen concentration in the pod 110 is adjusted, but the humidity in the pod 110 may be adjusted. Specifically, the humidity in the pod 110 is purged so that the relative humidity is 5% or less. The humidity may be adjusted by detecting the humidity in the pod 110 or the humidity in the exhaust gas using the above dew point meters 424 and 524 and performing feedback control based on the detected humidity value. In addition, the relationship between the inert gas supply amount and supply time of the inert gas and the humidity in the pod 110 may be obtained in advance, and may be adjusted by setting the supply amount and supply time of the inert gas. .

  In the present invention, an example in which the main placement unit is used as the first purge unit has been described. However, the present invention is not limited to this, and the pod opener 121 and the load port 114 are configured to have the same function, A purge unit may be used. Moreover, you may make it provide the main mounting part in several places.

When the pod opener 121 and the load port 114 are caused to function as the first purge unit, the same configuration as the above-described main replacement shelf 160 can be provided in the pod placement unit of the pod opener 121 and the load port 114.

Further, when the pod opener 121 is caused to function as the first purge unit, it may be configured as follows.
FIG. 16 is a plan sectional view of the pod opener 121. As shown in FIG. 16, positioning pins 28 are provided on the upper surface of the mounting table 122. With this positioning pin 28, the pod 110 is mounted at a predetermined position on the mounting table 122. The pod opener 121 includes a pod opener casing 48. The cap attaching / detaching mechanism 123 described above is accommodated inside the pod opener casing 48 (accommodating chamber 49). The cap attaching / detaching mechanism 123 can close and open the wafer loading / unloading port 120. Reference numerals 54, 55, and 56 are packings for ensuring airtightness when the wafer loading / unloading port 120 is closed by the cap attaching / detaching mechanism 123.

  A wafer loading / unloading port 50 is opened at a position facing the wafer loading / unloading port 120 in the pod opener casing 48. A gas supply pipe 52 that supplies nitrogen gas as an inert gas to the storage chamber 49 is connected to the side wall of the pod opener casing 48. A gas exhaust pipe 53 is connected to the front wall 119a.

The gas supply pipe 52 is provided with a flow rate control device 70 as in the case of the gas supply pipe 411 described above, and the flow rate is controlled by the controller 280. The flow control device 70 is composed of either or both of a valve and a mass flow controller. Further, an exhaust valve 71 may be provided in the gas exhaust pipe 53 so that the gas exhaust amount can be adjusted. The gas exhaust pipe 53 may be provided with an oxygen concentration meter 72 that detects the oxygen concentration in the exhaust gas from the storage chamber 49 and the pod 110 or in the exhaust gas from the storage chamber 49 and the pod 110. Further, a dew point meter 73 for detecting the humidity in the exhaust gas from the storage chamber 49 and the pod 110 or from the storage chamber 49 and the pod 110 may be provided.

  A rotary actuator 60 is attached near the wafer loading / unloading port 50 of the pod opener casing 48. A wafer number counter device 62 is fixed to the rotary actuator 60 via an arm 61.

  When the pod 110 is mounted on the mounting table 122, the cap of the pod 110 is held by the cap attaching / detaching mechanism 123. At this time, the cap attaching / detaching mechanism 123 is in a position to close the wafer loading / unloading port 120. The cap attaching / detaching mechanism 123 moves backward while holding the cap, thereby opening the pod 110 and the wafer loading / unloading port 120 and closing the wafer loading / unloading port 50.

An inert gas is supplied from the gas supply pipe 52 to the storage chamber 49 in a state where the wafer loading / unloading port 50 is closed. As a result, the air present inside the storage chamber 49 and the pod 110 is exhausted from the gas exhaust pipe 53, and the interior of the storage chamber 49 and the pod 110 is replaced with an inert gas. The flow rate of the inert gas at this time is set to the first flow rate (or a flow rate higher than that) so that the oxygen concentration in the pod 110 is equal to or lower than the first control value. In the adjustment of the oxygen concentration in the storage chamber 49 and the pod 110 by the pod opener 121, the oxygen concentration in the storage chamber 49 and the pod 110 or the oxygen concentration in the exhaust gas is detected using the oxygen concentration meter 72 described above. Thus, feedback control may be performed based on the detected oxygen concentration value. In addition, a relationship between the supply amount and supply time of the inert gas and the oxygen concentration in the storage chamber 49 and the pod 110 is obtained in advance, and one of the supply amount and supply time of the inert gas is determined based on the relationship. Or you may make it adjust by setting both.

  When the interior of the storage chamber 49 and the pod 110 is purged, the cap attaching / detaching mechanism 123 moves forward and slides further in the lateral direction. Thereby, each of the wafer loading / unloading port 120 and the wafer loading / unloading port 50 is opened. The rotary actuator 60 is driven to rotate the arm 61 so that the wafer number counter device 62 faces the pod 110, and the wafer number counter device 62 counts the wafers 200 accommodated in the pod 110. The wafer number counter device 62 may be provided in the wafer transfer mechanism 125. In this case, after opening each of the wafer loading / unloading port 120 and the wafer loading / unloading port 50, the wafer conveyance mechanism 125 is brought close to the pod 110, the wafer detection device 62 is opposed to the pod 110, and the wafers 200 are counted.

  When the counting of the wafers 200 is completed, the wafer number counter device 62 is returned to the original position. Then, after the cap attaching / detaching mechanism 123 is slid in the horizontal direction, the wafer loading / unloading port 120 is closed by moving it forward. Then, the cap of the pod 110 is attached to the pod 110 by the cap attaching / detaching mechanism 123.

  When the pod opener 121 is caused to function as the first purge unit, for example, in the flowchart shown in FIG. 12, the first purge (T420) and wafer number count (T430) steps are continuously executed by the pod opener 121. Will be. Further, when the load port 114 is caused to function as the first purge unit, it is executed when the pod 110 is supplied (placed) to the load port 114. In this case, for example, in the flowchart shown in FIG. 12, the first purge (T420) is executed in the loading process (T410) from the load port 114.

  In the present invention, the first purge process and the second purge process are performed at different locations. However, the present invention is not limited to this, and the second purge process is performed after the first purge process is performed at the same location. You may do it.

  Note that the present invention is a film forming process for forming various films such as an oxide film, a nitride film, and a metal film by a CVD (Chemical Vapor Deposition) method, an ALD (Atomic Layer Deposition) method, a PVD (Physical Vapor Deposition) method, and the like. In addition, the present invention can be applied to other substrate processing such as plasma processing, diffusion processing, annealing processing, oxidation processing, nitriding processing, and lithography processing. In addition to the thin film forming apparatus, the present invention includes an etching apparatus, an annealing apparatus, an oxidation apparatus, a nitriding apparatus, an exposure apparatus, a coating apparatus, a molding apparatus, a developing apparatus, a dicing apparatus, a wire bonding apparatus, a drying apparatus, and a heating apparatus. The present invention can also be applied to other substrate processing apparatuses such as apparatuses and inspection apparatuses. In the present invention, not only the vertical substrate processing apparatus 100 but also a horizontal substrate processing apparatus and various single-wafer type substrate processing apparatuses may be used.

  Further, the present invention is not limited to a semiconductor manufacturing apparatus that processes a semiconductor wafer such as the substrate processing apparatus 100 according to the present embodiment, but an LCD (Liquid Crystal Display) manufacturing apparatus that processes a glass substrate, a solar cell manufacturing apparatus, or the like. It can also be applied to the substrate processing apparatus.

<Preferred embodiment of the present invention>
Hereinafter, preferred embodiments of the present invention will be additionally described.

(Appendix 1)
According to one aspect,
A processing vessel for processing a substrate;
A first purge unit for performing a first purge for supplying an inert gas at a first flow rate to a substrate container in which the substrate is accommodated;
A second purge unit for performing a second purge for supplying an inert gas to the substrate container at a second flow rate smaller than the first flow rate;
A substrate processing apparatus is provided.

(Appendix 2)
The substrate processing apparatus according to appendix 1, preferably,
A substrate container opening and closing part for opening and closing the substrate container;
A substrate container storage shelf for storing the substrate container;
The first purge unit is provided in the substrate container opening / closing unit, and the second purge unit is provided in the substrate container storage shelf.

(Appendix 3)
The substrate processing apparatus according to appendix 1, preferably,
A substrate container delivery table on which the substrate container is placed when the substrate container is carried into the substrate processing apparatus;
A substrate container storage shelf for storing the substrate container;
There is provided a substrate processing apparatus in which the first purge unit is provided on the substrate container delivery table, and the second purge unit is provided on the substrate container storage shelf.

(Appendix 4)
The substrate processing apparatus according to any one of appendices 1 to 3, preferably,
A substrate container transfer device for transferring the substrate container;
A transfer control unit that controls the substrate container transfer device to transfer the substrate container from the first purge unit to the second purge unit;
The first purge unit is controlled to execute the first purge when the first purge unit has the substrate container, and the substrate container is transported from the first purge unit to the second purge unit. A purge control unit that controls the second purge unit to execute the second purge when the second purge is performed.

(Appendix 5)
The substrate processing apparatus according to appendix 1 or 2, preferably,
A substrate container transfer device for transferring the substrate container;
When the substrate container is loaded into the substrate processing apparatus, the substrate container is transported to the first purge unit, and then transported from the first purge unit to the second purge unit. A transport control unit for controlling the container transport device;
The first purge unit is controlled to execute the first purge when the substrate container is transported to the first purge unit, and the substrate is accommodated from the first purge unit to the second purge unit. And a purge control unit for controlling the second purge unit so as to execute the second purge when the container is conveyed.

(Appendix 6)
The substrate processing apparatus according to any one of appendices 1 to 5, preferably,
The first purge unit is configured to reduce the oxygen concentration in the substrate container to a first control value or less by supplying an inert gas at the first flow rate to the substrate container. The purge unit is configured to maintain an oxygen concentration in the substrate container at a second management value or less by supplying an inert gas at the second flow rate to the substrate container.

(Appendix 7)
The substrate processing apparatus according to appendix 6, preferably,
The second management value is an oxygen concentration higher than the first management value.

(Appendix 8)
According to one aspect,
A processing container in which a substrate is processed;
A first purge unit for purging a substrate container in which the substrate is accommodated;
A substrate container transfer device for transferring the substrate container;
A substrate container transfer chamber provided with the substrate container transfer device;
A substrate container opening and closing part for opening and closing the substrate container;
When transporting the substrate container from the first purge unit to the substrate container opening / closing unit, the substrate container is configured so that the oxygen concentration in the substrate container is equal to or lower than a predetermined control value in the first purge unit. A control unit for controlling the first purge unit to purge the inside;
A substrate processing apparatus is provided.

(Appendix 9)
The substrate processing apparatus according to appendix 8, preferably,
A second purge unit that purges the inside of the container is provided in the substrate container transfer chamber.

(Appendix 10)
The substrate processing apparatus according to appendix 8 or 9, preferably,
The predetermined management value includes a first management value and a second management value having an oxygen concentration higher than the first management value.

(Appendix 11)
The substrate processing apparatus according to any one of appendices 8, 9, and 10, preferably,
The control unit purges the substrate container whose oxygen concentration has been lowered to the first management value or less by the first purge unit so as to maintain the substrate container at the second management value or less by the second purge unit.

(Appendix 12)
The substrate processing apparatus according to appendix 11, preferably,
The control unit purges the first container with the first management value when transporting the substrate container from the first purge unit to the second purge unit.

(Appendix 13)
The substrate processing apparatus according to any one of appendices 6, 10, 11, and 12, preferably,
The first management value is 600 ppm, and the second management value is 600 ppm or more and 1000 ppm or less.

(Appendix 14)
The substrate processing apparatus according to any one of appendices 1 to 7, 9 to 13, preferably
A main purge port provided in the first purge unit supplies gas at a first flow rate into the substrate container,
A sub-purge port provided in the second purge unit supplies gas at a second flow rate into the substrate container.

(Appendix 15)
The substrate processing apparatus of appendix 14, preferably,
The first flow rate is greater than the second flow rate.

(Appendix 16)
The substrate processing apparatus according to appendix 1 or 15, preferably,
The first flow rate is 20 slm or more and 100 slm,
The second flow rate is 0.5 slm or more and 20 slm.

(Appendix 17)
According to one aspect,
A first purge unit for performing a first purge for supplying an inert gas at a first flow rate to a substrate container in which a substrate is accommodated;
A second purge unit for performing a second purge for supplying an inert gas to the substrate container at a second flow rate smaller than the first flow rate;
A purging device is provided.

(Appendix 18)
The purge apparatus according to appendix 17, preferably,
The first purge unit is provided in the substrate container opening / closing unit installed in the substrate processing apparatus for opening and closing the substrate container, and the second purge unit is installed in the substrate processing apparatus. It is provided in the substrate container storage shelf for storing the container.

(Appendix 19)
The purge device of appendix 17,
The first purge unit is provided in a substrate container delivery table installed in the substrate processing apparatus, on which the substrate container is placed when the substrate container is carried into the substrate processing apparatus, The purge unit is provided in a substrate container storage shelf installed in the substrate processing apparatus for storing the substrate container.

(Appendix 20)
According to yet another aspect,
A first purge step of performing a first purge in a first purge unit for supplying an inert gas at a first flow rate to a substrate container in which a substrate is accommodated;
Transporting the substrate container from the first purge unit to a second purge unit;
A second purge step in which a second purge for supplying an inert gas to the substrate container at a second flow rate smaller than the first flow rate is performed in a second purge unit;
A method of manufacturing a semiconductor device having the above is provided.

(Appendix 21)
The method for manufacturing a semiconductor device according to appendix 20, preferably,
In the first purge step, by supplying an inert gas at the first flow rate to the substrate container, the oxygen concentration in the substrate container is lowered to a first control value or less,
In the second purge step, the oxygen concentration in the substrate container is maintained below a second control value by supplying an inert gas at the second flow rate to the substrate container.

(Appendix 22)
The method of manufacturing a semiconductor device according to appendix 21, preferably,
The second management value is an oxygen concentration higher than the first management value.

(Appendix 23)
According to yet another aspect,
A step of transferring the substrate from the substrate container transfer chamber to which the substrate container is transferred to the substrate transfer chamber via the substrate container opening and closing device;
Transporting the substrate from the substrate transport chamber to the processing vessel;
A first purge step of purging the oxygen concentration in the substrate container to be equal to or lower than a first control value before transporting the substrate container to the container opening and closing device;
A method for manufacturing a semiconductor device comprising:

(Appendix 24)
According to yet another aspect,
A first purge procedure in which a first purge for supplying an inert gas at a first flow rate to a substrate container in which a substrate is accommodated is executed in the first purge unit;
A procedure for transporting the substrate container from the first purge unit to the second purge unit;
A second purge procedure in which a second purge for supplying an inert gas to the substrate container at a second flow rate smaller than the first flow rate is performed in a second purge unit;
A program for causing a computer to execute is provided.

(Appendix 25)
According to yet another aspect,
A procedure for transporting a substrate from a substrate container transport chamber to which the substrate container is transported to a substrate transport chamber via a substrate container switch; and
A procedure for transferring the substrate from the substrate transfer chamber to the processing container;
A first purge procedure for purging the oxygen concentration in the substrate container to be equal to or lower than a first control value before transporting the substrate container to the container opening and closing device;
A program for causing a computer to execute is provided.

(Appendix 26)
According to yet another aspect,
A first purge procedure in which a first purge for supplying an inert gas at a first flow rate to a substrate container in which a substrate is accommodated is executed in the first purge unit;
A procedure for transporting the substrate container from the first purge unit to the second purge unit;
A second purge procedure in which a second purge for supplying an inert gas to the substrate container at a second flow rate smaller than the first flow rate is performed in a second purge unit;
A computer-readable recording medium storing a program for causing a computer to execute is provided.

(Appendix 27)
According to yet another aspect,
A procedure for transporting a substrate from a substrate container transport chamber to which the substrate container is transported to a substrate transport chamber via a substrate container switch; and
A procedure for transferring the substrate from the substrate transfer chamber to the processing container;
A first purge procedure for purging the oxygen concentration in the substrate container to be equal to or lower than a first control value before transporting the substrate container to the container opening and closing device;
A computer-readable recording medium storing a program for causing a computer to execute is provided.

DESCRIPTION OF SYMBOLS 100 Substrate processing apparatus 105 Pod shelf 110 Pod 111 Case 114 Load port 117 Shelf board 118 Pod transfer device 121 Pod opener 124 Substrate transfer chamber 125 Wafer transfer mechanism 150 Substrate container transfer chamber 160 Main mounting shelf 202 Processing vessel 203 Reaction tube 217 boat 280 controller (controller)
280a CPU
280b RAM
280c Storage device 280d I / O port 281 Input device 282 External storage device 410 Main gas supply port 412 Main flow control device 422 Main exhaust valve 423 Oxygen concentration meter 424 Dew point meter 510 Sub gas supply port 512 Sub flow control device 522 Sub exhaust valve 523 Oxygen concentration meter 524 Dew point meter

Claims (7)

A processing vessel for processing a substrate;
A first purge unit for performing a first purge for supplying an inert gas at a first flow rate to a substrate container in which the substrate is accommodated;
A second purge unit for performing a second purge for supplying an inert gas to the substrate container at a second flow rate smaller than the first flow rate;
A substrate processing apparatus. A substrate container opening and closing part for opening and closing the substrate container;
A substrate container storage shelf for storing the substrate container;
The substrate processing apparatus according to claim 1, wherein the first purge unit is provided in the substrate container opening / closing unit, and the second purge unit is provided in the substrate container storage shelf. A substrate container delivery table on which the substrate container is placed when the substrate container is carried into the substrate processing apparatus;
A substrate container storage shelf for storing the substrate container;
The substrate processing apparatus according to claim 1, wherein the first purge unit is provided on the substrate container delivery table, and the second purge unit is provided on the substrate container storage shelf. A substrate container transfer device for transferring the substrate container;
A transfer control unit that controls the substrate container transfer device to transfer the substrate container from the first purge unit to the second purge unit;
The first purge unit is controlled to execute the first purge when the first purge unit has the substrate container, and the substrate container is transported from the first purge unit to the second purge unit. A purge control unit for controlling the second purge unit to perform the second purge when
The substrate processing apparatus in any one of Claim 1 to 3 provided with these. A first purge unit for performing a first purge for supplying an inert gas at a first flow rate to a substrate container in which a substrate is accommodated;
A second purge unit for performing a second purge for supplying an inert gas to the substrate container at a second flow rate smaller than the first flow rate;
A purge device. A first purge step of performing, in the first purge unit, a first purge for supplying an inert gas at a first flow rate to a substrate container in which a substrate is accommodated;
Transporting the substrate container from the first purge unit to a second purge unit;
A second purge step in which a second purge for supplying an inert gas to the substrate container at a second flow rate smaller than the first flow rate is performed in a second purge unit;
A method for manufacturing a semiconductor device comprising: A first purge procedure in which a first purge for supplying an inert gas at a first flow rate to a substrate container in which a substrate is accommodated is executed in the first purge unit;
A procedure for transporting the substrate container from the first purge unit to the second purge unit;
A second purge procedure in which a second purge for supplying an inert gas to the substrate container at a second flow rate smaller than the first flow rate is performed in a second purge unit;
A program that causes a computer to execute.