JP2015053502A - Multilayer ceramic capacitor - Google Patents
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- 239000003985 ceramic capacitor Substances 0.000 title claims abstract description 44
- 239000000919 ceramic Substances 0.000 claims abstract description 56
- 229910052788 barium Inorganic materials 0.000 claims abstract description 29
- 150000001875 compounds Chemical class 0.000 claims abstract description 29
- 239000000463 material Substances 0.000 claims description 57
- 230000007847 structural defect Effects 0.000 abstract description 14
- 230000007423 decrease Effects 0.000 abstract description 4
- 238000005204 segregation Methods 0.000 abstract description 4
- 239000000843 powder Substances 0.000 description 26
- 230000000149 penetrating effect Effects 0.000 description 16
- 238000005498 polishing Methods 0.000 description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 12
- 238000000034 method Methods 0.000 description 12
- 239000000126 substance Substances 0.000 description 10
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 9
- 229910002113 barium titanate Inorganic materials 0.000 description 9
- 239000000654 additive Substances 0.000 description 8
- 230000000996 additive effect Effects 0.000 description 8
- 239000003990 capacitor Substances 0.000 description 8
- 230000032798 delamination Effects 0.000 description 8
- 230000000007 visual effect Effects 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000010304 firing Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 238000007665 sagging Methods 0.000 description 3
- 238000000992 sputter etching Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- -1 V 2 O 5 Inorganic materials 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 239000011812 mixed powder Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 229910020599 Co 3 O 4 Inorganic materials 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229940116411 terpineol Drugs 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/008—Selection of materials
- H01G4/0085—Fried electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
- H01G4/1227—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Ceramic Capacitors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
Description
本発明は、積層セラミックコンデンサに関し、複数の誘電体セラミック層と、誘電体セラミック層を介して積層された複数の内部電極とを有するセラミック積層体(コンデンサ本体)を具備する積層セラミックコンデンサに関する。 The present invention relates to a multilayer ceramic capacitor, and more particularly, to a multilayer ceramic capacitor including a ceramic multilayer body (capacitor body) having a plurality of dielectric ceramic layers and a plurality of internal electrodes laminated via the dielectric ceramic layers.
近年、電子機器の小型・軽量化にともない、小型で、大容量を取得することが可能な積層セラミックコンデンサが広く用いられている。この積層セラミックコンデンサは、例えば、複数の誘電体セラミック層と、誘電体セラミック層間の複数の界面に配設された複数の内部電極とを有するセラミック積層体(コンデンサ本体)に、上記内部電極と導通するように外部電極が配設された構造を有するものが広く知られている。 In recent years, with the reduction in size and weight of electronic devices, multilayer ceramic capacitors that are small in size and capable of acquiring a large capacity are widely used. For example, the multilayer ceramic capacitor is electrically connected to a ceramic multilayer body (capacitor body) having a plurality of dielectric ceramic layers and a plurality of internal electrodes disposed at a plurality of interfaces between the dielectric ceramic layers. As such, those having a structure in which external electrodes are arranged are widely known.
そして、このような積層セラミックコンデンサとして、チタン酸バリウムを主成分として含有し、チタン酸バリウム100モルに対して、(1−x)BaZrO3+xSrZrO3で表される成分を、BaZrO3およびSrZrO3換算で5〜15モル、Mgの酸化物をMgO換算で3〜5モル、希土類元素の酸化物をR2O3換算で4〜6モル、Mn、Cr、CoおよびFeから選ばれる少なくとも1つの元素の酸化物を、MnO、Cr2O3、Co3O4およびFe2O3換算で0.5〜1.5モル、Siを含む化合物をSi換算で2.5〜4モル、含有し、xが0.4〜0.9である誘電体磁器組成物を用いた誘電体中に、ニッケルからなる内部電極を配設した積層セラミックコンデンサ(積層型磁器コンデンサ)が提案されている。 As such a multilayer ceramic capacitor, barium titanate is contained as a main component, and a component represented by (1-x) BaZrO 3 + xSrZrO 3 is contained in BaZrO 3 and SrZrO 3 with respect to 100 mol of barium titanate. 5 to 15 mol in terms of conversion, 3 to 5 mol in terms of Mg oxide in terms of MgO, 4 to 6 mol in terms of oxide of rare earth elements in terms of R 2 O 3 , at least one selected from Mn, Cr, Co and Fe The elemental oxide contains 0.5 to 1.5 mol in terms of MnO, Cr 2 O 3 , Co 3 O 4 and Fe 2 O 3 , and the compound containing Si contains 2.5 to 4 mol in terms of Si. A multilayer ceramic capacitor (multilayer ceramic capacitor) in which an internal electrode made of nickel is disposed in a dielectric using a dielectric ceramic composition in which x is 0.4 to 0.9 has been proposed.
そして、上記の誘電体磁器組成物は、誘電体セラミック層を薄層化した場合であっても、高い電界強度下における比誘電率が高く、しかも良好な温度特性および信頼性を有していることから、それを用いた積層セラミックコンデンサにおいても、高温負荷寿命の良好な積層セラミックコンデンサが得られるとされている。 The dielectric ceramic composition described above has a high relative dielectric constant under high electric field strength and good temperature characteristics and reliability even when the dielectric ceramic layer is thinned. For this reason, it is said that a multilayer ceramic capacitor having a high temperature load life can be obtained even in a multilayer ceramic capacitor using the same.
しかし、近年、積層セラミックコンデンサの小型化、大容量化を目的とした誘電体セラミック層や内部電極の薄層化、多層化が進み、クラックやデラミネーションの発生などの構造欠陥や内部電極のカバレッジの低下などが問題が顕在化し、さらに信頼性の高い積層セラミックコンデンサが求められるようになっている。 In recent years, however, dielectric ceramic layers and internal electrodes have been made thinner and multilayered for the purpose of downsizing and increasing the capacity of multilayer ceramic capacitors, and structural defects such as cracks and delamination and coverage of internal electrodes As a result of such problems, a more reliable multilayer ceramic capacitor has been demanded.
本発明は、上記課題を解決するものであり、構造欠陥がなく、内部電極が誘電体セラミック層を被覆している割合である内部電極のカバレッジの低下の少ない、信頼性の高い積層セラミックコンデンサを提供することを目的とする。 The present invention solves the above-described problems, and provides a highly reliable multilayer ceramic capacitor that is free from structural defects and has a low internal electrode coverage reduction that is a ratio of the internal electrode covering the dielectric ceramic layer. The purpose is to provide.
上記課題を解決するため、本発明の積層セラミックコンデンサは、
複数の誘電体セラミック層と、前記誘電体セラミック層を介して積層された複数の内部電極とを備えるセラミック積層体と、前記内部電極と導通するように前記セラミック積層体に配設された外部電極とを備えた積層セラミックコンデンサであって、
前記誘電体セラミック層は、BaとTiを有するペロブスカイト型化合物を含み、
前記内部電極は、
(a)Niを主成分とし、
(b)内部電極に埋没するような態様で内部電極中に点在する、BaとTiを有するペロブスカイト型化合物を含む偏析物を2%以上の割合で含有し、
(c)内部電極を一方主面側から他方主面側に貫通する、BaとTiを有するペロブスカイト型化合物を含む柱状の偏析物を、5%以下の割合で含有するか、または含有しないこと
を特徴とする積層セラミックコンデンサ。
In order to solve the above problems, the multilayer ceramic capacitor of the present invention is
A ceramic laminate comprising a plurality of dielectric ceramic layers and a plurality of internal electrodes laminated via the dielectric ceramic layers, and an external electrode disposed in the ceramic laminate so as to be electrically connected to the internal electrodes A multilayer ceramic capacitor comprising:
The dielectric ceramic layer includes a perovskite type compound having Ba and Ti,
The internal electrode is
(A) Ni as a main component,
(B) containing a segregated material including a perovskite type compound having Ba and Ti, which is scattered in the internal electrode in such a manner as to be buried in the internal electrode, in a ratio of 2% or more;
(C) A columnar segregated material containing a perovskite type compound having Ba and Ti that penetrates the internal electrode from one main surface side to the other main surface side is contained in a proportion of 5% or less. Characteristic multilayer ceramic capacitor.
本発明の積層セラミックコンデンサにおいては、前記内部電極の平均厚みが0.4μm以下であることが好ましい。 In the multilayer ceramic capacitor of the present invention, it is preferable that the average thickness of the internal electrodes is 0.4 μm or less.
内部電極の平均厚みを0.4μm以下にすることにより、構造欠陥を抑制し、内部電極のカバレッジの低下を防止する効果をより顕著なものとすることができる。 By setting the average thickness of the internal electrodes to 0.4 μm or less, it is possible to suppress the structural defects and make the effect of preventing the deterioration of the coverage of the internal electrodes more remarkable.
本発明の積層セラミックコンデンサは、上述のように、Niを主成分とする内部電極が、(a)内部電極に埋没するような態様で内部電極中に点在する、BaとTiを有するペロブスカイト型化合物を含む偏析物を2%以上の割合で含有し、(b)内部電極を、一方主面側から他方主面側に貫通する、BaとTiを有するペロブスカイト型化合物を含む柱状の偏析物を、5%以下の割合で含有するか、または含有しない構成としているので、Niを主成分とする内部電極の線膨張係数を誘電体セラミック層の線膨張係数に近づけて、誘電体セラミック層と内部電極との線膨張係数の差に起因する、クラックやデラミネーションなどの構造欠陥の発生や、内部電極のカバレッジの低下などのない、信頼性の高い積層セラミックコンデンサを提供することが可能になる。 As described above, the multilayer ceramic capacitor of the present invention is a perovskite type having Ba and Ti, in which the internal electrode mainly composed of Ni is scattered in the internal electrode in such a manner that (a) it is buried in the internal electrode. A columnar segregated material containing a perovskite type compound having Ba and Ti, containing a segregated material containing a compound in a ratio of 2% or more and (b) penetrating the internal electrode from one main surface side to the other main surface side. 5% or less is contained or not contained, so that the linear expansion coefficient of the internal electrode mainly composed of Ni is brought close to the linear expansion coefficient of the dielectric ceramic layer, and the dielectric ceramic layer and the internal Providing highly reliable multilayer ceramic capacitors that are free from structural defects such as cracks and delamination due to the difference in coefficient of linear expansion from the electrodes, and that the internal electrode coverage is not reduced. Rukoto becomes possible.
なお、内部電極を貫通する柱状の偏析物は、内部電極のカバレッジを低下させることから、含有量は少ない方がよく、含まれていなくてもよい。 In addition, since the columnar segregated material penetrating the internal electrode lowers the coverage of the internal electrode, the content is preferably small and may not be included.
以下に本発明の実施形態を示して、本発明の特徴とするところをさらに詳しく説明する。 Embodiments of the present invention will be described below to describe the features of the present invention in more detail.
[実施形態1]
(1)チタン酸バリウム粉の作製
誘電体セラミック原料を得るため、純度99重量%以上のBaCO3、TiO2の各粉末をBa:Ti=1:1の割合で調合した。
次に、この調合粉末をボールミルで湿式混合し、均一に分散させた後、乾燥処理を施して調整粉末を得た。得られた調整粉末を1000℃で仮焼し、平均粒径150nmの主成分粉末としてのチタン酸バリウム粉末を得た。
[Embodiment 1]
(1) Production of barium titanate powder In order to obtain a dielectric ceramic raw material, BaCO 3 and TiO 2 powders having a purity of 99% by weight or more were prepared in a ratio of Ba: Ti = 1: 1.
Next, this blended powder was wet-mixed with a ball mill and uniformly dispersed, and then subjected to a drying treatment to obtain an adjusted powder. The obtained adjusted powder was calcined at 1000 ° C. to obtain barium titanate powder as a main component powder having an average particle diameter of 150 nm.
他方、副成分として、MgO、Al2O3、V2O5、MnO2、Dy2O3、SiO2の各粉末(副成分粉末)を準備した。
次に、MgO、Al2O3、V2O5、MnO2、Dy2O3、SiO2の各粉末を、Ti100モル部に対する Mg、Al、V、Mn、Dy、Siの含有量が所定量(Mg1.3モル部、Al0.5モル部、V0.1モル部、Mn0.1モル部、Dy1.0モル部、Si1.5モル部)となるように秤量し、上記主成分粉末に添加することにより、混合粉末を得た。
この混合粉末をボールミルで湿式混合し、均一に分散させた後、乾燥処理を施して、誘電体セラミック原料を得た。
On the other hand, MgO, Al 2 O 3 , V 2 O 5 , MnO 2 , Dy 2 O 3 , and SiO 2 powders (subcomponent powders) were prepared as subcomponents.
Next, the MgO, Al 2 O 3 , V 2 O 5 , MnO 2 , Dy 2 O 3 , and SiO 2 powders have a content of Mg, Al, V, Mn, Dy, and Si with respect to 100 mole parts of Ti. Weighed so as to be fixed (Mg1.3 mol part, Al0.5 mol part, V0.1 mol part, Mn0.1 mol part, Dy1.0 mol part, Si1.5 mol part) By adding, a mixed powder was obtained.
This mixed powder was wet-mixed with a ball mill and uniformly dispersed, and then subjected to a drying treatment to obtain a dielectric ceramic raw material.
(2)誘電体セラミック層用のセラミックグリーンシートの作製
次に、誘電体セラミック原料に、ポリビニルブチラール系バインダ、可塑剤および有機溶剤としてのエタノールを加え、これらをボールミルにより湿式混合し、セラミックスラリーを作製した。そして、このセラミックスラリーをリップ方式によりシート成形し、矩形のセラミックグリーンシートを得た。
(2) Production of ceramic green sheet for dielectric ceramic layer Next, a polyvinyl butyral binder, a plasticizer and ethanol as an organic solvent are added to the dielectric ceramic raw material, and these are wet-mixed by a ball mill to obtain a ceramic slurry. Produced. And this ceramic slurry was sheet-formed by a lip method to obtain a rectangular ceramic green sheet.
(3)導電性ペーストの作製
導電成分である平均粒径0.2μmのNi粉末を用意した。また、上述の主成分粉末としてのチタン酸バリウム粉末と同じで、平均粒径が0.02μmの、導電性ペーストに添加するための添加用(共材用)チタン酸バリウム粉末を用意した。
(3) Preparation of conductive paste Ni powder having an average particle size of 0.2 μm, which is a conductive component, was prepared. Further, an additive (for co-material) barium titanate powder to be added to the conductive paste having the same average particle diameter of 0.02 μm as the above-mentioned main component powder was prepared.
また、上述の添加用(共材用)チタン酸バリウム粉末中のTi100モル部に対して、Dyが1.0モル部、Mgが1.3モル部となるように、添加用(共材用)Dy2O3粉末、添加用(共材用)MgO粉末を準備した。
また、エチルセルロースをテルピネオールに溶解させた有機ビヒクルを準備した。
Further, for addition (for common material), Dy is 1.0 mol part and Mg is 1.3 mol part with respect to 100 mol parts of Ti in the above-mentioned additive (common material) barium titanate powder. ) Dy 2 O 3 powder and MgO powder for addition (for common material) were prepared.
In addition, an organic vehicle in which ethylcellulose was dissolved in terpineol was prepared.
そして、上述のようにして準備した粉末(Ni粉末、添加用(共材用)チタン酸バリウム粉末、添加用(共材用)MgO粉末、添加用(共材用)Dy2O3粉末)を有機ビヒクル中に3本ロールミルを使って分散させ、内部電極形成用の導電性ペーストを作製した。 And the powders prepared as described above (Ni powder, additive (for co-material) barium titanate powder, additive (for co-material) MgO powder, additive (for co-material) Dy 2 O 3 powder) A three-roll mill was used to disperse in the organic vehicle to produce a conductive paste for forming internal electrodes.
なお、共材用の粉末(添加用(共材用)チタン酸バリウム、添加用(共材用)MgO粉末、添加用(共材用)Dy2O3粉末)の配合量は、Ni粉末中のNi100重量部に対して、共材用の粉末が表1に示す割合(wt%)となるように配合した。 In addition, the compounding amount of powder for common materials (additive (for common materials) barium titanate, additive (for common materials) MgO powder, additive (for common materials) Dy 2 O 3 powder) It mixed so that the powder for co-material might be the ratio (wt%) shown in Table 1 with respect to 100 parts by weight of Ni.
(4)積層セラミックコンデンサの作製
(4−1)セラミックグリーンシートへの導電性ペーストの印刷
上述のようにして作製した導電性ペーストを、セラミックグリーンシート上にスクリーン印刷し、内部電極となるべき導電性ペースト膜(内部電極パターン)を形成した。
(4) Production of monolithic ceramic capacitor (4-1) Printing of conductive paste on ceramic green sheet The conductive paste produced as described above is screen-printed on the ceramic green sheet, and the conductive to be used as an internal electrode. Conductive paste film (internal electrode pattern) was formed.
(4−2)積層
次に、導電性ペースト膜が形成されたセラミックグリーンシートを、導電性ペースト膜の引き出されている側が互い違いになるように300層積層し、その積層方向両側に導電性ペースト膜が形成されていない外層用のセラミックグリーンシートを積層して、焼成後にコンデンサ本体となる未焼成の積層体を得た。
(4-2) Lamination Next, 300 layers of the ceramic green sheet on which the conductive paste film is formed are laminated so that the side from which the conductive paste film is drawn is alternate, and the conductive paste is formed on both sides of the lamination direction. A ceramic green sheet for an outer layer on which no film was formed was laminated to obtain an unfired laminate that became a capacitor body after firing.
(4−3)焼成
得られた積層体をN2雰囲気中において350℃の温度で3時間加熱し、バインダを燃焼させた後、昇温速度100℃/min、最高温度1200℃で10分キープ、酸素分圧10-4MPaのH2−N2−H2Oガスからなる還元性雰囲気の条件で焼成した。また、降温速度は表1に示す速度とした。これにより、焼結済みのコンデンサ本体(セラミック積層体)を得た。
(4-3) Firing The obtained laminate was heated in a N 2 atmosphere at a temperature of 350 ° C. for 3 hours to burn the binder, and then kept at a heating rate of 100 ° C./min and a maximum temperature of 1200 ° C. for 10 minutes. And calcining under conditions of a reducing atmosphere composed of H 2 —N 2 —H 2 O gas having an oxygen partial pressure of 10 −4 MPa. In addition, the cooling rate was the rate shown in Table 1. As a result, a sintered capacitor body (ceramic laminate) was obtained.
(4−4)外部電極の形成
次に、上記コンデンサ本体の両端面に、ガラスフリットを含有するCuペーストを塗布し、N2雰囲気中において、800℃の温度で焼き付け、内部電極と電気的に接続された外部電極を形成した。
これにより、図1および図2に示すような構造を有する表1の試料番号1〜10の積層セラミックコンデンサ(試料)50を得た。
(4-4) Formation of External Electrode Next, a Cu paste containing glass frit is applied to both end faces of the capacitor main body and baked at a temperature of 800 ° C. in an N 2 atmosphere to electrically connect with the internal electrode. A connected external electrode was formed.
Thereby, the multilayer ceramic capacitor (sample) 50 of the sample numbers 1-10 of Table 1 which has a structure as shown in FIG. 1 and FIG. 2 was obtained.
このようにして得た積層セラミックコンデンサの外形寸法は、図2のL方向の寸法を長さとし、W方向の寸法を幅、T方向の寸法を厚さとした場合に、長さL=1.0mm、幅W=0.5mm、厚さT=0.5mmであった。 The external dimensions of the multilayer ceramic capacitor thus obtained are as follows: length L = 1.0 mm when the dimension in the L direction in FIG. 2 is the length, the dimension in the W direction is the width, and the dimension in the T direction is the thickness. The width W was 0.5 mm and the thickness T was 0.5 mm.
(4−5)積層セラミックコンデンサの構成
この積層セラミックコンデンサ50は、図1および図2に示すように、積層されている複数の誘電体セラミック層11と、誘電体セラミック層11間の複数の界面に配設されている複数の内部電極12とを有するセラミック積層体(コンデンサ本体)10と、セラミック積層体10の両端面に、交互に逆側の端面に引き出された内部電極12と導通するように配設された一対の外部電極13a,13bとを備えた構造を有している。なお、外部電極13a,13bには、Niめっき層、Snめっき層を備えた構成とすることも可能である。
(4-5) Configuration of Multilayer Ceramic Capacitor As shown in FIGS. 1 and 2, the multilayer
そして、本発明の実施形態にかかる積層セラミックコンデンサ50においては、内部電極12が、図3に模式的に示すように、内部電極12に全体が埋没するような態様で内部電極12中に点在する偏析物20aと、内部電極12を、一方主面側から他方主面側に(厚み方向に)貫通する柱状の偏析物20bとを含んでいる。内部電極12中に点在する偏析物20aは内部電極12で周囲を取り囲まれている。内部電極12を貫通する柱状の偏析物20bは内部電極12の厚み方向上下に配置されている2つの誘電体セラミック層11に接触している。
In the multilayer
前者の内部電極12を貫通せず、内部電極12中に全体が埋没するような態様で点在する偏析物20aは、Niを主成分とする内部電極12の線膨張係数と、誘電体セラミック層11の線膨張係数の差を減少させ、クラックやデラミネーションなどの構造欠陥の発生を防止するとともに、内部電極が誘電体セラミック層を被覆している割合である内部電極のカバレッジの低下を抑制する機能を果たす。
The
一方、内部電極12を貫通する柱状の偏析物20bは、内部電極12のカバレッジ(内部電極12が誘電体セラミック層11を被覆している割合)を低下させることから、含有量は少ない方がよく、含まれていなくてもよい偏析物である。
On the other hand, the columnar
(5)内部電極に点在する、BaとTiを有するペロブスカイト型化合物を含む偏析物の存在割合
上述のようにして作製した表1の試料番号1〜10の試料について、以下に説明する方法により、内部電極12に点在する偏析物20a、すなわち、内部電極12を貫通せず、内部電極12中に全体が埋没するような態様で点在する、BaとTiを有するペロブスカイト型化合物を含む偏析物20a(図3参照)の存在割合を調べた。この実施形態では、上記偏析物20aの存在割合を、TEM−EDX分析により調べた。
以下、図4を参照しつつ、内部電極に点在する偏析物の存在割合の確認方法について説明する。
(5) Presence ratio of segregated matter including perovskite type compound having Ba and Ti scattered in internal electrode About samples of
Hereinafter, with reference to FIG. 4, a method for confirming the existence ratio of segregated substances scattered in the internal electrode will be described.
まず、表1の各試料(積層セラミックコンデンサ)をそれぞれ3個準備し、試料の長さ方向(L方向)と厚み方向(T方向)により規定される面(LT面)が露出するような態様で、各試料の周囲を樹脂で固めた。
次に、研磨機により、試料のLT側面を研磨した。このとき、試料の幅方向(W方向)の1/4程度の深さまで研磨を行い、研磨面であるLT面(LT研磨端面)を露出させた。そして、研磨による内部電極のダレをなくすために、研磨終了後、イオンミリングにより研磨表面を加工した。
First, three samples (multilayer ceramic capacitors) shown in Table 1 are prepared, and the surface (LT surface) defined by the length direction (L direction) and the thickness direction (T direction) of the sample is exposed. The periphery of each sample was hardened with resin.
Next, the LT side surface of the sample was polished by a polishing machine. At this time, polishing was performed to a depth of about 1/4 of the width direction (W direction) of the sample, and the LT surface (LT polished end surface), which was a polished surface, was exposed. In order to eliminate sagging of the internal electrode due to polishing, the polished surface was processed by ion milling after polishing.
そして、図4に示すように、L方向中央の、内部電極12が積層されている領域をT方向に3等分に分割し、上部領域、中間領域、下部領域と3つの領域に分けた。そして、それぞれの領域の中央部付近を薄片化し、厚み100nmの薄片試料を作製した。
同様にして、試料の幅方向(W方向)の1/2程度の深さ、および、3/4程度の深さにおいても薄片試料を作製した。したがって、試料数3個×3つの研磨面×3つの領域=27個の薄片試料を作製した。
Then, as shown in FIG. 4, the region where the
Similarly, a thin piece sample was produced at a depth of about ½ in the width direction (W direction) of the sample and a depth of about ¾. Therefore, the number of samples 3 × 3 polished surfaces × 3 regions = 27 thin sample samples were produced.
各領域における観察の視野範囲は、縦方向(積層方向、T方向)では、積層方向に2層の内部電極を観察できる範囲とした。また、横方向(積層方向に垂直な方向、L方向)の視野範囲は、積層方向(T方向)の視野範囲と同じ長さとした。 The visual field range of observation in each region was set to a range in which two layers of internal electrodes can be observed in the stacking direction in the vertical direction (stacking direction, T direction). Further, the visual field range in the lateral direction (direction perpendicular to the stacking direction, L direction) is the same length as the visual field range in the stacking direction (T direction).
そして、TEM−EDX分析の結果から、画像処理ソフトを用いて、画像中の内部電極の面積(点在する、BaおよびTiを有するペロブスカイト型化合物を含む偏析物20aが存在している領域、および、柱状のBaおよびTiを有するペロブスカイト型化合物を含む偏析物20bが存在している領域を含む)と、BaおよびTiを有するペロブスカイト型化合物を含む、点在する偏析物20aの面積を求めた。
Then, from the result of the TEM-EDX analysis, using the image processing software, the area of the internal electrode in the image (the area where the
それから、下記の式(1)により、内部電極12に点在する偏析物20aの存在割合を求めた。
内部電極に点在する偏析物の存在割合(%)=(点在する偏析物の面積/内部電極の面積)×100 ……(1)
Then, the presence ratio of the
Presence ratio (%) of segregated substances scattered on internal electrodes = (area of segregated substances / area of internal electrodes) × 100 (1)
なお、この実施形態における内部電極に点在する偏析物の存在割合は、27個の薄片試料の平均値である。
上述のようにして求めた、内部電極に点在する偏析物の存在割合(%)を表1に示す。
In this embodiment, the ratio of the segregated substances scattered on the internal electrodes is an average value of 27 thin sample samples.
Table 1 shows the abundance ratio (%) of segregated substances scattered in the internal electrode, obtained as described above.
(6)内部電極を貫通する、BaとTiを有するペロブスカイト型化合物を含む柱状の偏析物の存在割合
内部電極を貫通する、BaとTiを有するペロブスカイト型化合物を含む柱状の偏析物の存在割合は、以下に説明する方法で、WDX分析により行った。
以下、図4を参照しつつ、内部電極を貫通する柱状の偏析物の存在割合の確認方法について説明する。
まず、表1の各試料(積層セラミックコンデンサ)をそれぞれ3個準備し、試料の長さ方向(L方向)と厚み方向(T方向)により規定される面(LT面)が露出するような態様で、各試料の周囲を樹脂で固めた。
(6) Presence ratio of columnar segregates containing a perovskite type compound having Ba and Ti penetrating through the internal electrode Presence ratio of columnar segregates containing a perovskite type compound having Ba and Ti penetrating the internal electrode is The method described below was performed by WDX analysis.
Hereinafter, a method for confirming the existence ratio of the columnar segregated material penetrating the internal electrode will be described with reference to FIG.
First, three samples (multilayer ceramic capacitors) shown in Table 1 are prepared, and the surface (LT surface) defined by the length direction (L direction) and the thickness direction (T direction) of the sample is exposed. The periphery of each sample was hardened with resin.
次に、研磨機により、試料のLT側面を研磨した。このとき、試料の幅方向(W方向)の1/4程度の深さまで研磨を行い、研磨面であるLT面(LT研磨端面)を露出させた。そして、研磨による内部電極のダレをなくすために、研磨終了後、イオンミリングにより研磨表面を加工した。 Next, the LT side surface of the sample was polished by a polishing machine. At this time, polishing was performed to a depth of about 1/4 of the width direction (W direction) of the sample, and the LT surface (LT polished end surface), which was a polished surface, was exposed. In order to eliminate sagging of the internal electrode due to polishing, the polished surface was processed by ion milling after polishing.
研磨した試料について、図4に示すように、試料のLT研磨端面のL方向の1/2程度の位置において、内部電極12が積層されている領域をT方向に3等分に分割し、上部領域、中間領域、下部領域の3つの領域に分割した。
For the polished sample, as shown in FIG. 4, the region where the
各領域の中央部付近において、WDX分析を行った。各領域における観察の視野範囲は、縦方向(積層方向、T方向)では、内部電極が積層方向に5層分観察できる範囲とした。横方向(積層方向に垂直な方向、L方向)の視野範囲は、積層方向(T方向)の視野範囲と同じ長さとした。
同様にして、試料の幅方向(W方向)の1/2程度の深さ、および、3/4程度の深さにおいてもWDX分析を行った。したがって、試料数3個×3つの研磨面×3つの領域=27箇所においてWDX分析を行った。
WDX analysis was performed near the center of each region. The viewing field range in each region was set to a range in which five internal electrodes could be observed in the stacking direction in the vertical direction (stacking direction, T direction). The visual field range in the horizontal direction (direction perpendicular to the stacking direction, L direction) was the same as the visual field range in the stacking direction (T direction).
Similarly, WDX analysis was performed at a depth of about ½ in the width direction (W direction) of the sample and a depth of about ¾. Therefore, WDX analysis was performed on 3 samples × 3 polishing surfaces × 3 regions = 27 locations.
画像処理ソフトを用いて、画像中の内部電極の面積(点在する、BaおよびTiを有するペロブスカイト型化合物を含む偏析物20aが存在している領域、および、柱状のBaおよびTiを有するペロブスカイト型化合物を含む偏析物20bが存在している領域を含む)と、内部電極を貫通する、BaとTiを有するペロブスカイト型化合物を含む柱状の偏析物の面積を求めた。
Using the image processing software, the area of the internal electrode in the image (the area where the
そして、下記の式(2)により、内部電極12を貫通する柱状の偏析物20bの存在割合を求めた。
内部電極を貫通する柱状の偏析物の存在割合(%)=(内部電極を貫通する柱状の偏析物の面積/内部電極の面積)×100 ……(2)
なお、この実施形態における内部電極を貫通する柱状の偏析物の存在割合は、試料数3個×3つの研磨面×3つの領域の平均値である。
上述のようにして求めた、内部電極を貫通する柱状の偏析物の存在割合(%)を表1に示す。
And the abundance ratio of the columnar
Presence ratio of columnar segregated material penetrating internal electrode (%) = (area of columnar segregated material penetrating internal electrode / area of internal electrode) × 100 (2)
In this embodiment, the ratio of the columnar segregated material penetrating through the internal electrode is the average value of the number of samples 3 × 3 polished surfaces × 3 regions.
Table 1 shows the abundance (%) of columnar segregated material penetrating the internal electrode, as determined above.
(7)内部電極の平均厚みの測定
内部電極層の厚みは、走査型電子顕微鏡を用いて測定した。以下に図4を参照しつつ、内部電極のの平均厚みの測定方法について説明する。
まず、表1の各試料(積層セラミックコンデンサ)をそれぞれ3個準備し、試料の長さ方向(L方向)と厚み方向(T方向)により規定される面(LT面)が露出するような態様で、各試料の周囲を樹脂で固めた。
(7) Measurement of average thickness of internal electrode The thickness of the internal electrode layer was measured using a scanning electron microscope. Hereinafter, a method for measuring the average thickness of the internal electrodes will be described with reference to FIG.
First, three samples (multilayer ceramic capacitors) shown in Table 1 are prepared, and the surface (LT surface) defined by the length direction (L direction) and the thickness direction (T direction) of the sample is exposed. The periphery of each sample was hardened with resin.
次に、研磨機により、試料のLT側面を研磨した。このとき、試料の幅方向(W方向)の1/2程度の深さまで研磨を行い、研磨面であるLT面(LT研磨端面)を露出させた。そして、研磨による内部電極のダレをなくすために、研磨終了後、イオンミリングにより研磨表面を加工した。 Next, the LT side surface of the sample was polished by a polishing machine. At this time, polishing was performed to a depth of about ½ of the width direction (W direction) of the sample to expose the LT surface (LT polished end surface) as a polished surface. In order to eliminate sagging of the internal electrode due to polishing, the polished surface was processed by ion milling after polishing.
研磨した試料について、内部電極の厚みを測定した。内部電極の厚みを測定するにあたっては、図4に示すように、試料のLT研磨端面のL方向の1/2程度の位置において、内部電極12とほぼ直交する直線L1を引く(想定する)。
For the polished sample, the thickness of the internal electrode was measured. In measuring the thickness of the internal electrode, as shown in FIG. 4, a straight line L <b> 1 that is substantially orthogonal to the
次に、試料の内部電極12が積層されている領域をT方向に3等分に分割し、上部領域、中間領域、下部領域の3つの領域に分割した。
Next, the region where the
各領域の最外の内部電極を除き、各領域で、直線L1上の内部電極を無作為に5層ずつ選び、厚みを測定した。なお、内部電極層の厚みは、走査型電子顕微鏡を用いて測定した。
したがって、この実施形態1での内部電極の平均厚みは、試料数3個×3つの領域×5層=45箇所における内部電極の厚みの平均値である。
ただし、内部電極が欠落しているなどの理由で測定できない部分は測定対象から除いた。
上述のようにして求めた、内部電極の平均厚みを表1に示す。
Except for the outermost internal electrode in each region, five internal electrodes on the straight line L1 were randomly selected in each region, and the thickness was measured. The thickness of the internal electrode layer was measured using a scanning electron microscope.
Therefore, the average thickness of the internal electrodes in the first embodiment is the average value of the thicknesses of the internal electrodes at the number of samples 3 × 3 regions × 5 layers = 45 locations.
However, parts that could not be measured due to a lack of internal electrodes were excluded from the measurement target.
Table 1 shows the average thickness of the internal electrodes determined as described above.
(8)内部電極のカバレッジの測定
内部電極12の配設されている領域のうち、内部電極が誘電体セラミック層を被覆している割合であるカバレッジを以下の方法で測定した。
(8) Measurement of coverage of internal electrode The coverage which is the ratio which the internal electrode has coat | covered the dielectric ceramic layer among the area | regions where the
まず、表1の各試料(積層セラミックコンデンサ)をそれぞれ5個準備し、T方向中央部付近で内部電極と誘電体セラミック層の界面に沿ってセラミック積層体(コンデンサ本体)を剥離、分割した。このようにして露出させた内部電極の中央部付近(セラミック積層体のL方向の1/2程度、かつ、W方向の1/2程度の位置)を倍率500倍の顕微鏡で観察するとともに、倍率500倍の顕微鏡写真を撮り、画像処理を行うことにより、内部電極のカバレッジ(内部電極が存在する領域の割合)を定量化し、平均値を求めた。
なお、内部電極のカバレッジが80%を下回ると、意図する静電容量を得ることができなくなり好ましくない。
内部電極のカバレッジの測定結果を表1に示す。
First, five samples (multilayer ceramic capacitors) shown in Table 1 were prepared, and the ceramic laminate (capacitor body) was peeled and divided along the interface between the internal electrode and the dielectric ceramic layer near the center in the T direction. The vicinity of the central portion of the exposed internal electrode (position of about 1/2 in the L direction and about 1/2 in the W direction) of the internal electrode is observed with a microscope having a magnification of 500 times. By taking a 500-fold photomicrograph and performing image processing, the coverage of the internal electrode (ratio of the area where the internal electrode exists) was quantified, and an average value was obtained.
If the coverage of the internal electrode is less than 80%, it is not preferable because the intended capacitance cannot be obtained.
Table 1 shows the measurement results of the internal electrode coverage.
(9)構造欠陥の発生状態の確認
構造欠陥の発生状態を調べるため、以下の方法で、デラミネーションおよびクラックの発生した試料の数を調べた。
(9) Confirmation of Structural Defect Generation State In order to investigate the structural defect occurrence state, the number of samples with delamination and cracks was examined by the following method.
まず、表1の各試料(積層セラミックコンデンサ)をそれぞれ72個準備した。そして、準備した試料について、超音波探傷試験によりデラミネーションおよびクラックの発生の有無(発生した試料の数)を調べた。 First, 72 samples (multilayer ceramic capacitors) shown in Table 1 were prepared. The prepared samples were examined for the presence or absence of delamination and cracks (number of samples generated) by an ultrasonic flaw detection test.
その結果を表1に示す。なお、表1では、デラミネーションおよびクラックのいずれかが発生した試料数と、試験に供した試料数の関係(デラミネーションおよびクラックのいずれかの発生した試料数/試験に供した試料数)を示している。
表1において、試料番号に*を付した試料は本発明の範囲外の試料である。
The results are shown in Table 1. In Table 1, the relationship between the number of samples in which either delamination or cracks occurred and the number of samples used in the test (number of samples in which either delamination or cracks occurred / number of samples used in the test) is shown. Show.
In Table 1, the sample numbered with * is a sample outside the scope of the present invention.
また、表1において、共材料は、共材用のチタン酸バリウム粉末の、内部電極を構成するNi100重量部に対する割合(wt%)を示している。 In Table 1, the common material indicates the ratio (wt%) of the barium titanate powder for common material to 100 parts by weight of Ni constituting the internal electrode.
<評価>
表1に示すように、内部電極中に点在する、BaとTiを有するペロブスカイト型化合物を含む偏析物を2%以上の割合で含有し、かつ、内部電極を一方主面側から他方主面側に貫通する、BaとTiを有するペロブスカイト型化合物を含む柱状の偏析物の含有量が5%以下の試料番号1〜5の試料、すなわち、本発明の要件を満たす試料の場合、内部電極のカバレッジが80%以上と高く、かつ、デラミネーションやクラックなどの構造欠陥の発生のない積層セラミックコンデンサが得られることが確認された。
<Evaluation>
As shown in Table 1, the segregated material containing a perovskite compound having Ba and Ti, which is scattered in the internal electrode, is contained at a ratio of 2% or more, and the internal electrode is disposed from one main surface side to the other main surface. In the case of the sample of Sample Nos. 1 to 5 having a columnar segregated material containing a perovskite type compound having Ba and Ti penetrating to the side, that is, the sample satisfying the requirements of the present invention, It was confirmed that a multilayer ceramic capacitor having a high coverage of 80% or more and free from structural defects such as delamination and cracks can be obtained.
なお、本発明の要件を満たす表1の試料番号1〜5の場合、焼成工程における降温速度が100℃/minと速いことから、内部電極中の共材(BaとTiを有するペロブスカイト型化合物を含む偏析物となる物質)が降温工程で吐き出されずに、内部電極内に残りやすくなる。その結果、内部電極中に点在するBaとTiを有するペロブスカイト型化合物を含む偏析物の含有量が2%以上となり、内部電極(Ni電極)の線膨張係数が誘電体セラミック層の線膨張係数に近づくため、構造欠陥が起こりにくくなったものと考えられる。
In the case of
一方、内部電極中に点在する、BaとTiを有するペロブスカイト型化合物を含む偏析物の含有量が2%未満であるかまたは、内部電極を一方主面側から他方主面側に貫通する、BaとTiを有するペロブスカイト型化合物を含む柱状の偏析物の含有量が5%を超える試料番号6〜10の試料、すなわち、本発明の要件を満たさない試料の場合、カバレッジが80%未満にまで低下するか、構造欠陥の発生が認められるかしており、好ましくないことが確認された。 On the other hand, the content of the segregated material including the perovskite type compound having Ba and Ti scattered in the internal electrode is less than 2%, or the internal electrode penetrates from one main surface side to the other main surface side. In the case of the sample Nos. 6 to 10 in which the content of the columnar segregated material including the perovskite type compound having Ba and Ti exceeds 5%, that is, the sample not satisfying the requirements of the present invention, the coverage is less than 80%. It was confirmed that it was lowered or occurrence of structural defects was observed, which was not preferable.
なお、本発明の要件を満たさない試料番号6〜10の試料のうち、試料番号6の試料の場合、共材の配合割合が多すぎるため、内部電極中に共材が多く残り、それに伴って内部電極を貫通する柱状の偏析物の含有量も5%以上(8%)となり、内部電極のカバレッジが60%にまで低下し、好ましくないことが確認された。 In addition, in the case of the sample of sample number 6 among the samples of sample numbers 6 to 10 that do not satisfy the requirements of the present invention, since the blending ratio of the common material is too large, a large amount of the common material remains in the internal electrode, and accordingly The content of the columnar segregated material penetrating the internal electrode was also 5% or more (8%), and the coverage of the internal electrode was reduced to 60%, which was confirmed to be undesirable.
また、試料番号7の試料の場合、共材量が少ないため、内部電極中の偏析物が少なくなり、構造欠陥が増加することが確認された。 Moreover, in the case of the sample of sample number 7, since the amount of co-material was small, it was confirmed that the segregated matter in the internal electrode was reduced and the structural defect was increased.
また、試料番号8の試料の場合、降温速度が遅いため、降温工程で共材が吐き出され、内部電極中に点在する偏析物の存在割合が少なくなって、構造欠陥が増加することが確認された。 In the case of sample No. 8, since the rate of temperature decrease is slow, it is confirmed that the common material is discharged in the temperature decreasing step, the proportion of segregated substances scattered in the internal electrode decreases, and the structural defect increases. It was done.
また、試料番号9および10の試料の場合、内部電極が厚みが薄いため、構造欠陥の発生数が増加することが確認された。この結果から、内部電極の厚みが薄くなると、点在する偏析物の影響が大きくなり、本発明の範囲を下回った場合の悪影響が大きくなることがわかる。 In the case of samples Nos. 9 and 10, it was confirmed that the number of structural defects increased because the internal electrodes were thin. From this result, it can be seen that when the thickness of the internal electrode is reduced, the influence of the segregated substances scattered increases, and the adverse effect when the thickness falls below the range of the present invention increases.
以上の結果から、本発明の要件、内部電極中に点在する、BaとTiを有するペロブスカイト型化合物を含む偏析物の含有量が2%以上で、かつ、内部電極を貫通する、BaとTiを有するペロブスカイト型化合物を含む柱状の偏析物の含有量が5%以下という要件を満たすことにより信頼性の高い積層セラミックコンデンサが得られることが確認された。 From the above results, the requirements of the present invention, the content of segregated matter including a perovskite type compound having Ba and Ti interspersed in the internal electrode is 2% or more, and Ba and Ti penetrate the internal electrode. It was confirmed that a highly reliable multilayer ceramic capacitor can be obtained by satisfying the requirement that the content of the columnar segregated material including the perovskite type compound having 5% or less.
なお、本発明は上記実施形態に限定されるものではなく、発明の範囲内において種々の応用、変形を加えることが可能である。 In addition, this invention is not limited to the said embodiment, A various application and deformation | transformation are possible within the scope of the invention.
10 コンデンサ本体(セラミック積層体)
11 誘電体セラミック層
12 内部電極
13a,13b 外部電極
20a 内部電極中に点在する偏析物
20b 内部電極を貫通する柱状の偏析物
50 積層セラミックコンデンサ
L 積層セラミックコンデンサの長さ
T 積層セラミックコンデンサの高さ
W 積層セラミックコンデンサの幅
10 Capacitor body (ceramic laminate)
DESCRIPTION OF
Claims (2)
前記誘電体セラミック層は、BaとTiを有するペロブスカイト型化合物を含み、
前記内部電極は、
(a)Niを主成分とし、
(b)内部電極に埋没するような態様で内部電極中に点在する、BaとTiを有するペロブスカイト型化合物を含む偏析物を2%以上の割合で含有し、
(c)内部電極を一方主面側から他方主面側に貫通する、BaとTiを有するペロブスカイト型化合物を含む柱状の偏析物を、5%以下の割合で含有するか、または含有しないこと
を特徴とする積層セラミックコンデンサ。 A ceramic laminate comprising a plurality of dielectric ceramic layers and a plurality of internal electrodes laminated via the dielectric ceramic layers, and an external electrode disposed in the ceramic laminate so as to be electrically connected to the internal electrodes A multilayer ceramic capacitor comprising:
The dielectric ceramic layer includes a perovskite type compound having Ba and Ti,
The internal electrode is
(A) Ni as a main component,
(B) containing a segregated material including a perovskite type compound having Ba and Ti, which is scattered in the internal electrode in such a manner as to be buried in the internal electrode, in a ratio of 2% or more;
(C) A columnar segregated material containing a perovskite type compound having Ba and Ti that penetrates the internal electrode from one main surface side to the other main surface side is contained in a proportion of 5% or less. Characteristic multilayer ceramic capacitor.
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| US14/885,101 US9870865B2 (en) | 2014-10-23 | 2015-10-16 | Multilayer ceramic capacitor including a perovskite compound |
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| JPWO2017187848A1 (en) * | 2016-04-28 | 2019-02-21 | 株式会社村田製作所 | Ceramic electronic component and method for manufacturing ceramic electronic component |
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