JP2014504038A - 太陽電池及びその製造方法 - Google Patents
太陽電池及びその製造方法 Download PDFInfo
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- JP2014504038A JP2014504038A JP2013551896A JP2013551896A JP2014504038A JP 2014504038 A JP2014504038 A JP 2014504038A JP 2013551896 A JP2013551896 A JP 2013551896A JP 2013551896 A JP2013551896 A JP 2013551896A JP 2014504038 A JP2014504038 A JP 2014504038A
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- Prior art keywords
- barrier layer
- solar cell
- substrate
- layer
- zno
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
- H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/169—Thin semiconductor films on metallic or insulating substrates
- H10F77/1694—Thin semiconductor films on metallic or insulating substrates the films including Group I-III-VI materials, e.g. CIS or CIGS
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
- H10F77/251—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising zinc oxide [ZnO]
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- H10P14/2923—
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- H10P14/3202—
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- H10P14/3226—
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- H10P14/3251—
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- H10P14/3436—
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
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- Photovoltaic Devices (AREA)
Abstract
【選択図】図1
Description
Claims (11)
- 基板と、
前記基板の上に形成された裏面電極層、光吸収層、透明電極層と、
前記基板と裏面電極層との間に形成されて2族元素を含むバリア層と、
を含むことを特徴とする、太陽電池。 - 前記バリア層は50nm乃至1μmであることを特徴とする、請求項1に記載の太陽電池。
- 前記バリア層はZnOを含むことを特徴とする、請求項1に記載の太陽電池。
- 前記バリア層はNa2OまたはK2Oのうち、いずれか1つをさらに含むことを特徴とする、請求項3に記載の太陽電池。
- 前記バリア層はZnOを含む第1バリア層と、Na2OまたはK2Oのうちのいずれか1つを含む第2バリア層を含むことを特徴とする、請求項4に記載の太陽電池。
- 前記第1バリア層及び第2バリア層は互いに交差して積層形成されたことを特徴とする、請求項5に記載の太陽電池。
- 前記基板は金属成分が含まれた金属基板であることを特徴とする、請求項1に記載の太陽電池。
- 金属基板を用意するステップと、
前記金属基板の上に2族元素を含むバリア層を形成するステップと、
前記バリア層の上に裏面電極層、光吸収層、透明電極層を順次に形成するステップと、
を含むことを特徴とする、太陽電池製造方法。 - 前記バリア層はZnO、Na2O、またはK2Oのうち、いずれか1つを蒸着して形成されることを特徴とする、請求項8に記載の太陽電池製造方法。
- 前記バリア層はZnO、Na2O、またはK2Oのうち、いずれか1つを同時に蒸着させて形成されることを特徴とする、請求項9に記載の太陽電池製造方法。
- 前記バリア層はZnO、Na2O、またはK2Oのうち、いずれか1つを交互に蒸着させて形成されることを特徴とする、請求項9に記載の太陽電池製造方法。
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020110006994A KR20120085577A (ko) | 2011-01-24 | 2011-01-24 | 태양전지 및 그의 제조방법 |
| KR10-2011-0006994 | 2011-01-24 | ||
| PCT/KR2012/000550 WO2012102533A2 (ko) | 2011-01-24 | 2012-01-20 | 태양전지 및 그의 제조방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2014504038A true JP2014504038A (ja) | 2014-02-13 |
Family
ID=46581272
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013551896A Pending JP2014504038A (ja) | 2011-01-24 | 2012-01-20 | 太陽電池及びその製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP2669957A4 (ja) |
| JP (1) | JP2014504038A (ja) |
| KR (1) | KR20120085577A (ja) |
| CN (1) | CN103430322B (ja) |
| WO (1) | WO2012102533A2 (ja) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101436539B1 (ko) * | 2012-11-06 | 2014-09-02 | 엘에스엠트론 주식회사 | 박막형 태양전지 및 그 제조방법 |
| KR101709999B1 (ko) * | 2015-10-30 | 2017-02-24 | 한국생산기술연구원 | ZnO 확산 방지층을 갖는 태양 전지 및 그 제조 방법 |
| WO2019245433A1 (en) * | 2018-06-19 | 2019-12-26 | Solibro Research Ab | Cigs solar cell with barrier layer and method of producing such |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010239129A (ja) * | 2009-03-10 | 2010-10-21 | Fujifilm Corp | 光電変換素子及び太陽電池、光電変換素子の製造方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7732229B2 (en) * | 2004-09-18 | 2010-06-08 | Nanosolar, Inc. | Formation of solar cells with conductive barrier layers and foil substrates |
| JP2006140414A (ja) * | 2004-11-15 | 2006-06-01 | Matsushita Electric Ind Co Ltd | 太陽電池用基板及びこれを用いた太陽電池 |
| CN101093863A (zh) * | 2007-06-12 | 2007-12-26 | 南开大学 | ZnO为电绝缘与杂质阻挡层的薄膜太阳电池及其制备方法 |
| KR101047941B1 (ko) * | 2007-10-31 | 2011-07-11 | 주식회사 엘지화학 | Ci(g)s 태양전지 후면 전극의 제조방법 |
| FR2924863B1 (fr) * | 2007-12-07 | 2017-06-16 | Saint Gobain | Perfectionnements apportes a des elements capables de collecter de la lumiere. |
| DE102009013904A1 (de) * | 2009-03-19 | 2010-09-23 | Clariant International Limited | Solarzellen mit einer Verkapselungsschicht auf Basis von Polysilazan |
-
2011
- 2011-01-24 KR KR1020110006994A patent/KR20120085577A/ko not_active Withdrawn
-
2012
- 2012-01-20 JP JP2013551896A patent/JP2014504038A/ja active Pending
- 2012-01-20 CN CN201280012896.4A patent/CN103430322B/zh not_active Expired - Fee Related
- 2012-01-20 WO PCT/KR2012/000550 patent/WO2012102533A2/ko not_active Ceased
- 2012-01-20 EP EP12739255.3A patent/EP2669957A4/en not_active Withdrawn
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010239129A (ja) * | 2009-03-10 | 2010-10-21 | Fujifilm Corp | 光電変換素子及び太陽電池、光電変換素子の製造方法 |
Non-Patent Citations (1)
| Title |
|---|
| JPN6015042101; C.Y.Shi: '"Cu(In,Ga)Se2 solar cells on stainless-steel substrates covered with ZnO diffusion barriers"' Solar Energy Materials and Solar Cells Vol.93, No.5 (2009), pp.654-656 * |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20120085577A (ko) | 2012-08-01 |
| WO2012102533A2 (ko) | 2012-08-02 |
| EP2669957A4 (en) | 2018-01-24 |
| CN103430322B (zh) | 2016-08-03 |
| CN103430322A (zh) | 2013-12-04 |
| WO2012102533A3 (ko) | 2012-11-29 |
| EP2669957A2 (en) | 2013-12-04 |
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