JP2014232848A - Manufacturing method for organic semiconductor device with organic electric field effect transistor - Google Patents

Abstract

Provided is a method for manufacturing an organic TFT which can form an organic TFT having a uniform crystallinity of an organic semiconductor thin film and uniform mobility, and which can cope with a fine pattern and has a high material efficiency. An organic semiconductor material is formed in advance on a transfer substrate and transferred between a source electrode and a drain electrode. Then, the orientation direction of the crystal of the organic semiconductor material 21 is analyzed, and based on the analysis result, the alignment direction of the source electrode 16 and the drain electrode 17 and the orientation direction of the crystal of the organic semiconductor material 21 have a desired relationship. To be. As a result, the organic TFT 11 with uniform crystallinity and uniform mobility of the organic semiconductor thin film 15 can be formed. Further, since a running distance is not required for each of the plurality of pixels, a fine pattern can be formed. [Selection] Figure 3

Description

  The present invention relates to a method for manufacturing an organic semiconductor device including an organic field effect transistor (hereinafter referred to as an organic TFT) that forms a channel region using an organic semiconductor thin film.

  Conventionally, there has been known an organic TFT in which an organic semiconductor thin film is disposed between a source electrode and a drain electrode that are spaced apart from each other, and a channel region is configured by the organic semiconductor thin film (for example, Patent Document 1). reference). In this organic TFT, for example, a spray printing method called a direct drawing method is used to apply an ink in which a constituent material of an organic semiconductor thin film is dissolved in a solvent on a substrate, and dry and crystallize the organic to form a channel region. A semiconductor thin film is formed.

JP 2009-218406 A

  However, the crystallinity of the organic crystals in the crystallized organic semiconductor thin film is not uniform. For this reason, for example, when an organic TFT is applied to an organic EL (electroluminescence) display device, the mobility of the organic TFT varies because the crystallinity of each pixel when a plurality of pixels are formed, for example, the orientation direction is not uniform. , Causing a problem that the yield decreases. Further, when the organic semiconductor thin film is formed by the direct drawing method, the run distance is necessary because the crystallinity is not good in the vicinity of the coating start position. For this reason, it is difficult to form a fine pattern for each pixel, and when coating is performed for each pixel, a run-up distance is required for each pixel, resulting in poor material efficiency.

  In view of the above points, the present invention provides an organic TFT manufacturing method that can form organic TFTs with uniform crystallinity of the organic semiconductor thin film and uniform mobility, can handle fine patterns, and has high material efficiency. The purpose is to provide.

  In order to achieve the above object, according to the invention described in claims 1 to 6, a transfer substrate (20) having an alignment mark (20a) is prepared, and a constituent material of the organic semiconductor thin film (15) is provided on the transfer substrate. Forming a plurality of organic TFTs (11), a step of crystal growth of the organic semiconductor material (21) to be formed, a step of analyzing the orientation direction of crystals of the organic semiconductor material on the transfer substrate with reference to the alignment mark The position of the channel region in the device forming substrate (12) for forming the crystal of the organic semiconductor material with respect to the arrangement direction of the source electrodes (16) and the drain electrodes (17) of all the plurality of organic TFTs with reference to the alignment mark Organic semiconductor by aligning the orientation direction in a certain direction and transferring the organic semiconductor material from the transfer substrate to the device formation substrate It is characterized in that it includes the steps of forming a film.

  In this way, an organic semiconductor material is formed on the transfer substrate in advance, and this is transferred between the source electrode and the drain electrode or at a formation planned position where the source electrode and the drain electrode are formed in a later step. ing. Then, the orientation direction of the crystal of the organic semiconductor material is analyzed, and based on the analysis result, the alignment direction of the source electrode and the drain electrode and the orientation direction of the crystal of the organic semiconductor material have a desired relationship. Yes. Therefore, an organic TFT with uniform crystallinity and uniform mobility of the organic semiconductor thin film can be formed.

  Further, it is only necessary to transfer the organic semiconductor thin film between the source electrode and the drain electrode. For this reason, the run-up distance as in the case of directly forming the organic semiconductor thin film between the source electrode and the drain electrode by the direct drawing method is not required. Therefore, it is possible to provide a method for manufacturing an organic TFT that can cope with fine patterns and has high material efficiency. In particular, when an organic TFT is applied to an organic EL display device, an organic semiconductor thin film is formed for each pixel. When a run-up distance is required for each pixel, it is difficult to form a fine pattern. Material efficiency also deteriorates. Therefore, it is particularly effective to make it possible to form a fine pattern by the manufacturing method according to claims 1 to 6.

  In addition, the code | symbol in the bracket | parenthesis of each said means shows an example of a corresponding relationship with the specific means as described in embodiment mentioned later.

It is sectional drawing of the organic TFT11 with which the organic semiconductor device concerning 1st Embodiment of this invention is equipped. It is sectional drawing which showed the manufacturing process of organic TFT11 shown in FIG. It is the perspective view which showed the manufacturing process of organic TFT11 shown in FIG. It is the perspective view which showed the manufacturing process of organic TFT11 with which the organic semiconductor device concerning 2nd Embodiment of this invention is equipped. It is sectional drawing of the organic TFT11 with which the organic semiconductor device concerning 3rd Embodiment of this invention is equipped. It is sectional drawing which showed the manufacturing process of organic TFT11 shown in FIG. It is sectional drawing of the organic TFT11 with which the organic semiconductor device concerning 4th Embodiment of this invention is equipped. It is sectional drawing which showed the manufacturing process of organic TFT11 shown in FIG. It is sectional drawing of organic TFT11 with which the organic semiconductor device concerning 5th Embodiment of this invention is equipped. It is sectional drawing which showed the manufacturing process of organic TFT11 shown in FIG.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiments, parts that are the same or equivalent to each other will be described with the same reference numerals.

(First embodiment)
A first embodiment of the present invention will be described. First, a basic structure of an organic semiconductor thin film manufactured by the manufacturing method according to the present embodiment will be described with reference to FIG.

  FIG. 1 shows an organic semiconductor device including an organic TFT 11 having a bottom gate / bottom contact structure. As shown in this figure, the organic TFT 11 has a structure in which a gate electrode 13, a gate insulating film 14, an organic semiconductor thin film 15, a source electrode 16 and a drain electrode 17 are formed on a device forming substrate 12.

On the device forming substrate 12, the gate electrode 13 is formed in a desired pattern, for example, a line having one direction as a longitudinal direction, and a gate insulating film 14 is formed so as to cover the gate electrode 13. As the device forming substrate 12, for example, a glass substrate or a film (ethylene naphthalate (PEN) or polyimide (PI)) is used. The gate electrode 13 is made of, for example, an electrode material such as gold (Au), chromium (Cr), or molybdenum (Mo), and the gate insulating film 14 is made of, for example, a silicon oxide film (SiO ₂ ) or alumina (Al ₂ O). ₃ ) It is made of insulating material.

  In addition, the organic semiconductor thin film 15 is formed at the position where the channel region is formed on the gate insulating film 14, and the source electrode 16 and the drain electrode 17 are formed at both ends of the organic semiconductor thin film 15. The organic semiconductor thin film 15 is made of, for example, a polymer organic material or a low molecular weight organic material, and the source electrode 16 and the drain electrode 17 are made of an electrode material such as silver (Ag) or copper (Cu). Yes. In the present embodiment, the organic semiconductor thin film 15 is formed after the source electrode 16 and the drain electrode 17, and the organic semiconductor thin film 15 is formed above the source electrode 16 and the drain electrode 17. The source electrode 16 and the drain electrode 17 are arranged apart from each other, are formed at positions corresponding to both ends of the gate electrode 13, respectively, and the organic semiconductor thin film 15 is formed so as to straddle the source electrode 16 and the drain electrode 17. Yes. A structure in which a channel region in which the arrangement direction of the source electrode 16 and the drain electrode 17 is a channel length and the channel width is a channel width is formed in the organic semiconductor thin film 15 positioned between the source electrode 16 and the drain electrode 17. It is said that.

  An interlayer insulating film 18 is formed on the organic semiconductor thin film 15, the source electrode 16 and the drain electrode 17. And although not shown in figure, the protective film is formed so that the whole substrate surface may be covered, and the pad part electrically connected to the source electrode 16 or the drain electrode 17 from the protective film is partially exposed, Electrical connection with the outside can be achieved.

  The organic semiconductor device according to the present embodiment is configured by such a structure. In the organic semiconductor device having such a structure, the gate electrode 13 is disposed below the organic semiconductor thin film 15, and the source electrode 16 and the drain electrode 17 are formed below the organic semiconductor thin film 15, so that electrical connection is established below. The bottom gate / bottom contact structure shown in FIG.

  Next, a method for manufacturing the organic semiconductor device configured as described above will be described with reference to FIGS.

  First, in the step shown in FIG. 2A, a device forming substrate 12 made of, for example, a glass substrate or a film (ethylene naphthalate (PEN) or polyimide (PI)) is prepared. Specifically, as the device forming substrate 12, as shown in FIG. 3A, a portion other than the device forming region, for example, one provided with alignment marks 12a in four corners is used. Then, a step of forming the gate electrode 13 by patterning the forming material while arranging the forming material of the gate electrode 13 on the surface of the device forming substrate 12 and performing mask alignment with the alignment mark 12a as a reference. Do. As a material for forming the gate electrode 13, for example, gold (Au), chromium (Cr), or molybdenum (Mo) is used. For example, the gate electrode 13 is formed on the surface of the device forming substrate 12 by printing or vapor deposition. ing.

Next, in the step shown in FIG. 2B, a step of forming a gate insulating film 14 so as to cover the surface of the gate electrode 13 is performed. As the gate insulating film 14, for example, an insulating material such as silicon oxide film (SiO ₂ ) or alumina (Al ₂ O ₃ ) is used. For example, the gate insulating film 14 is formed by printing, spin coating, vapor deposition, or the like. .

  Thereafter, in the step shown in FIG. 2C, the source electrode 16 and the drain electrode 17 are patterned using the alignment mark 12a as a reference. For example, after a film of an electrode material such as silver (Ag) or copper (Cu) is formed on the surface of the gate insulating film 14, a mask in which portions other than the regions where the source electrode 16 and the drain electrode 17 are to be formed is opened is formed thereon. Deploy. The source electrode 16 and the drain electrode 17 can be patterned by etching the metal layer using this mask. As a result, the source electrode 16 and the drain electrode 17 spaced apart from each other by a predetermined distance are formed in the cross section of FIG. When the source electrode 16 and the drain electrode 17 are formed in this manner, as shown in FIG. 3B, a plurality of source electrodes 16 and drain electrodes 17 are arranged in a predetermined layout on one device forming substrate 12. Formed in an array.

  On the other hand, as shown in FIG. 3C, a transfer substrate 20 different from the device forming substrate 12 is prepared. As the transfer substrate 20, for example, a glass substrate or a film (ethylene naphthalate (PEN) or polyimide (PI)) is used, and for example, a substrate provided with alignment marks 20 a at some of the four corners. . Then, as shown in FIG. 3D, a step of crystal growth of a thin-film organic semiconductor material 21 for forming the organic semiconductor thin film 15 is performed on the surface of the transfer substrate 20. For example, the organic semiconductor material 21 is formed by a direct drawing method, an edge cast method, an ink jet method, or the like. At this time, the portion used as the organic semiconductor thin film 15 in the organic semiconductor material 21 is made to be a single crystal in an ideal state (monodomain) having no step. In the organic semiconductor material 21 in such an ideal state, the orientation direction of the crystal on the transfer substrate 20 may be different for each substrate, and it is unclear how the orientation direction is during crystal growth. By using a single crystal, the orientation direction is in the same direction at any position. For this reason, by performing the process of analyzing the orientation direction of the crystal after film formation, the orientation direction of the crystal of the organic semiconductor material 21 on the transfer substrate 20 can be confirmed, and the orientation direction can be recognized with reference to the alignment mark 20a. It becomes. For example, any method such as analysis using an electron microscope or X-ray scattering analysis may be used as an analysis method of the crystal orientation direction, but the polarization direction by crossed Nicol image analysis using the clonicol rotation method. If it is an analysis of this, it can also be set as the analysis by a polarizing microscope.

  In the step shown in FIG. 2D, the organic semiconductor thin film 15 is formed by transferring the organic semiconductor material 21 between the source electrode 16 and the drain electrode 17 using a transfer device (not shown). Specifically, as shown in FIG. 3E, on the device forming substrate 12 on which the source electrode 16 and the drain electrode 17 are formed through the steps up to FIG. The transfer substrate 20 on which the organic semiconductor material 21 is formed in the step is installed. At this time, the surface of the device forming substrate 12 on which the source electrode 16 and the drain electrode 17 are formed and the surface of the transfer substrate 20 on which the organic semiconductor material 21 is formed face each other. The alignment direction of the source electrode 16 and the drain electrode 17, that is, the channel length direction and the crystal orientation direction of the organic semiconductor material 21, with reference to the alignment marks 12 a and 20 a of the device forming substrate 12 and the transfer substrate 20, respectively. Make the desired relationship. For example, the analysis result is stored in the transfer device, and the channel length direction and the crystal orientation direction of the organic semiconductor material 21 have a desired relationship based on the analysis result. Then, the organic semiconductor material 21 is transferred between the source electrode 16 and the drain electrode 17 by heating and pressurization.

  Thereby, the organic semiconductor thin film 15 is formed between the source electrode 16 and the drain electrode 17 as shown in FIG. 2D and FIG. And since the orientation direction of the crystal | crystallization of the organic-semiconductor material 21 can be aligned with a fixed direction with respect to the arrangement direction of the source electrode 16 and the drain electrode 17 which were formed in the device formation board | substrate 12, the mobility of organic TFT11 is possible. Can be arranged. In addition, since the organic semiconductor thin film 15 can be constituted by the organic semiconductor material 21 previously formed on the transfer substrate 20, the crystallinity of the organic semiconductor thin film 15 can be made uniform.

  Note that the relationship between the channel length direction and the crystal orientation direction is arbitrary, but for example, higher mobility can be realized by making the channel length direction and the crystal alignment direction the same. can do. Further, before transferring the organic semiconductor thin film 15, a portion to be transferred may be cut out in advance from the organic semiconductor material 21, and only the cut out portion may be transferred at the time of transfer. For example, the organic semiconductor material 21 may be cut out by any method such as machining, laser processing, or photolithography / etching.

  After forming the organic semiconductor thin film 15 between the source electrode 16 and the drain electrode 17 in this way, the surface of the organic semiconductor thin film 15, the source electrode 16, and the drain electrode 17 is covered as a step of FIG. Then, an interlayer insulating film 18 is formed. Then, if necessary, a protective film (not shown) is formed thereon. With such a manufacturing method, an organic semiconductor device including the organic TFT 11 shown in FIG. 1 can be manufactured.

  As described above, in the method of manufacturing the organic semiconductor device according to the present embodiment, the organic semiconductor material 21 is formed on the transfer substrate 20 in advance and transferred between the source electrode 16 and the drain electrode 17. I am doing so. Then, the orientation direction of the crystal of the organic semiconductor material 21 is analyzed, and based on the analysis result, the alignment direction of the source electrode 16 and the drain electrode 17 and the orientation direction of the crystal of the organic semiconductor material 21 have a desired relationship. It is trying to become. Therefore, the organic TFT 11 with uniform crystallinity and uniform mobility of the organic semiconductor thin film 15 can be formed.

  Further, it is only necessary to transfer the organic semiconductor thin film 15 between the source electrode 16 and the drain electrode 17. For this reason, there is no need for a running distance as in the case of directly forming the organic semiconductor thin film 15 between the source electrode 16 and the drain electrode 17 by the direct drawing method. Therefore, it is possible to provide a method for manufacturing the organic TFT 11 that can cope with a fine pattern and has high material efficiency. In particular, when the organic TFT 11 is applied to an organic EL display device, the organic semiconductor thin film 15 is formed for each of a plurality of pixels. If a run-up distance is required for each pixel, it is difficult to form a fine pattern. The material efficiency is also deteriorated. For this reason, it is particularly effective to be able to form a fine pattern by the manufacturing method of the present embodiment.

  Further, when the organic TFT 11 is manufactured by the manufacturing method as in the present embodiment, the organic semiconductor thin film 15 has a structure in which the upper surface when the crystal is grown is directed to the gate insulating film 14 side. When the organic semiconductor thin film 15 is formed by crystal growth, particularly in the case of crystal growth by the direct drawing method, the crystallinity is better at the position of the upper surface during crystal growth than at the position of the lower surface. For this reason, since the portion having particularly good crystallinity can be used in the organic semiconductor thin film 15 on the gate insulating film 14 side, that is, on the side where the channel region is formed, the organic TFT 11 can be made to have better characteristics.

(Second Embodiment)
A second embodiment of the present invention will be described. The present embodiment can be applied to the case where the crystallinity of the organic semiconductor material 21 is not in an ideal state as compared to the first embodiment. The other aspects are the same as those of the first embodiment. Only parts different from the first embodiment will be described.

  In the first embodiment, the case where the portion used as the organic semiconductor thin film 15 in the organic semiconductor material 21 is a single crystal has been described. However, in reality, desired crystallinity cannot be obtained and crystallinity is constant. In many cases, the crystal is a state in which crystal grains are gathered (multi-domain). In the present embodiment, a method for manufacturing an organic semiconductor device corresponding to the case where the crystals are in a state where the crystal flows are collected will be described.

  First, as shown in FIGS. 4A and 4B, the source electrode 16 and the drain electrode 17 are formed on the device forming substrate 12 as in FIGS. 3A and 3B. Then, a transfer substrate 20 is prepared as shown in FIG. 4C, and a step of crystal growth of the thin-film organic semiconductor material 21 is performed as shown in FIG. As a result, the organic semiconductor material 21 is composed of crystals in which the crystallinity is not constant and crystal grains are gathered.

  Subsequently, the crystal orientation direction, size, and position on the transfer substrate 20 of each crystal grain constituting the organic semiconductor material 21 are analyzed by the same analysis method as in the first embodiment, and the crystal orientation is mapped and data Is stored in the transfer device. For example, assuming that the transfer substrate 20 is an XY plane, the coordinates in the XY plane and the orientation direction, size, and position of the crystal for each crystal grain are stored. Then, if necessary, a portion to be transferred of the organic semiconductor material 21 is cut out for each crystal grain according to the shape of the channel region, and the source electrode 16 and the drain electrode 17 are formed as shown in FIG. The organic semiconductor material 21 is transferred between them. At this time, the transfer is performed while avoiding the crystal grain boundaries so that the crystal grain boundaries are not included in the channel region. Depending on the crystal grain, it may be less than the size for forming the channel region. In that case, the crystal grain is excluded from the channel region forming. Conversely, when the crystal grains are large, a plurality of locations may be extracted from the same crystal grain for forming the channel region.

  At this time, for each of the source electrode 16 and the drain electrode 17 formed on the device forming substrate 12, the transfer substrate 20 so that the channel length direction and the crystal orientation direction of the organic semiconductor material 21 have a desired relationship. Are translated and rotated on the XY plane. Thereby, as shown in FIG. 4F, the organic semiconductor thin film 15 is formed between the source electrode 16 and the drain electrode 17 formed on the device forming substrate 12. Then, the crystal orientation of the organic semiconductor material 21 can be aligned in a fixed direction with respect to the arrangement direction of the source electrode 16 and the drain electrode 17.

  As described above, even when the organic semiconductor material 21 is constituted by crystals in which the crystallinity is not constant but the crystal grains are gathered, the arrangement direction of the source electrode 16 and the drain electrode 17 and the orientation of the crystal of the organic semiconductor material 21 The direction can be in a desired relationship. Therefore, the same effect as that of the first embodiment can be obtained.

(Third embodiment)
A third embodiment of the present invention will be described. In this embodiment, the structure of the organic TFT 11 is different from that of the first and second embodiments, and the other aspects are the same as those of the first and second embodiments. Therefore, the first and second embodiments are the same. Only the parts different from the form will be described.

  In the present embodiment, a manufacturing process of an organic semiconductor device including the organic TFT 11 having the bottom gate / top contact structure shown in FIG. 5 will be described. The organic TFT 11 having a bottom gate / top contact structure has a structure in which the organic semiconductor thin film 15 is formed on the gate insulating film 14 before the source electrode 16 and the drain electrode 17 in the first embodiment. A thin film 15 is formed under the source electrode 16 and the drain electrode 17. Other structures are the same as those of the bottom gate / bottom contact structure described in the first embodiment.

  The organic TFT 11 having such a structure is manufactured as follows. First, as the steps shown in FIGS. 6A and 6B, the same steps as those in FIGS. 3A and 3B are performed to form the gate electrode 13 and the gate insulating film 14 on the device forming substrate 12. To do. Then, after forming the organic semiconductor thin film 15 as the step shown in FIG. 6C, the source electrode 16 and the drain electrode 17 are formed as the step shown in FIG. 6D, and then the step shown in FIG. 6E. An interlayer insulating film 18 is formed, and a protective film (not shown) is formed as necessary.

  In this way, the organic TFT 11 having the bottom gate / top contact structure shown in FIG. 5 can be manufactured. In the process of forming the organic semiconductor thin film 15 at this time, it is the same as in the first and second embodiments. The organic semiconductor thin film 15 is formed by this method.

  However, in this case, since the source electrode 16 and the drain electrode 17 are not yet formed before the organic semiconductor thin film 15 is formed, the organic semiconductor thin film 15 is transferred to a position where the source electrode 16 and the drain electrode 17 are to be formed. . Thereby, in the process shown in FIG. 6D, when the source electrode 16 and the drain electrode 17 are formed, the organic semiconductor thin film 15 is formed between the source electrode 16 and the drain electrode 17. In addition, the orientation direction of the crystal of the organic semiconductor material 21 can be aligned in a certain direction with respect to the arrangement direction of the source electrode 16 and the drain electrode 17. Therefore, the same effects as those of the first and second embodiments can be obtained.

(Fourth embodiment)
A fourth embodiment of the present invention will be described. The present embodiment also differs from the first and second embodiments in the structure of the organic TFT 11, and the other aspects are the same as those in the first and second embodiments. Therefore, the first and second embodiments are the same. Only the parts different from the form will be described.

  In the present embodiment, a manufacturing process of an organic semiconductor device including the organic TFT 11 having a top gate / bottom contact structure shown in FIG. 7 will be described. In the organic TFT 11 having a top gate / bottom contact structure, an organic semiconductor thin film 15, a source electrode 16, and a drain electrode 17 are formed on the surface of a device forming substrate 12, and a gate electrode 13 is formed thereon via a gate insulating film 14. Is the structure. The organic semiconductor thin film 15 is formed on the source electrode 16 and the drain electrode 17. Other structures are the same as those of the bottom gate / bottom contact structure described in the first embodiment.

  The organic TFT 11 having such a structure is manufactured as follows. First, as the step shown in FIG. 8A, after preparing the device forming substrate 12, the source electrode 16 and the drain electrode 17 are formed as the step shown in FIG. 8B. Further, in FIG. As a process shown, an organic semiconductor thin film 15 is formed. Subsequently, after forming the gate insulating film 14 so as to cover the organic semiconductor thin film 15, the source electrode 16 and the drain electrode 17 as a step shown in FIG. 8D, as a step shown in FIG. A gate electrode 13 is formed at a position corresponding to the space between the source electrode 16 and the drain electrode 17 on 14. Then, an interlayer insulating film 18 is formed, and then a protective film (not shown) is formed as necessary.

  In this way, the organic TFT 11 having the top gate / bottom contact structure shown in FIG. 7 can be manufactured. In the process of forming the organic semiconductor thin film 15 at this time, it is the same as in the first and second embodiments. The organic semiconductor thin film 15 is formed by this method. Thereby, the orientation direction of the crystal | crystallization of the organic-semiconductor material 21 can be arranged in a fixed direction. Therefore, the same effects as those of the first and second embodiments can be obtained.

(Fifth embodiment)
A fifth embodiment of the present invention will be described. The present embodiment also differs from the first and second embodiments in the structure of the organic TFT 11, and the other aspects are the same as those in the first and second embodiments. Therefore, the first and second embodiments are the same. Only the parts different from the form will be described.

  In the present embodiment, a manufacturing process of an organic semiconductor device including the organic TFT 11 having a top gate / top contact structure shown in FIG. 9 will be described. The organic TFT 11 having the top gate / top contact structure has a structure in which the organic semiconductor thin film 15 is formed on the gate insulating film 14 before the source electrode 16 and the drain electrode 17 in the fourth embodiment. A thin film 15 is formed under the source electrode 16 and the drain electrode 17. Other structures are the same as those of the top gate / bottom contact structure described in the fourth embodiment.

  The organic TFT 11 having such a structure is manufactured as follows. First, as a process shown in FIG. 10A, a device forming substrate 12 is prepared, and an organic semiconductor thin film 15 is formed thereon. Subsequently, the source electrode 16 and the drain electrode 17 are formed as a step shown in FIG. 10B, and further, the organic semiconductor thin film 15, the source electrode 16 and the drain electrode 17 are covered as a step shown in FIG. A gate insulating film 14 is formed. Further, as a step shown in FIG. 11D, the gate electrode 13 is formed on the gate insulating film 14 at a position corresponding to between the source electrode 16 and the drain electrode 17. Then, as a step shown in FIG. 10E, an interlayer insulating film 18 is formed, and then a protective film (not shown) is formed as necessary.

  In this way, the organic TFT 11 having the top gate / top contact structure shown in FIG. 9 can be manufactured. In the process of forming the organic semiconductor thin film 15 at this time, the same as in the first and second embodiments. The organic semiconductor thin film 15 is formed by this method.

  However, in this case, since the source electrode 16 and the drain electrode 17 are not yet formed before the organic semiconductor thin film 15 is formed, the organic semiconductor thin film 15 is transferred to a position where the source electrode 16 and the drain electrode 17 are to be formed. . 10C, when the source electrode 16 and the drain electrode 17 are formed, the organic semiconductor thin film 15 is formed between the source electrode 16 and the drain electrode 17. In addition, the orientation direction of the crystal of the organic semiconductor material 21 can be aligned in a certain direction with respect to the arrangement direction of the source electrode 16 and the drain electrode 17. Therefore, the same effects as those of the first and second embodiments can be obtained.

(Other embodiments)
The present invention is not limited to the embodiment described above, and can be appropriately changed within the scope described in the claims.

  For example, each of the above embodiments has shown an example of the organic TFT 11 provided with the organic semiconductor thin film 15. Of course, the present invention may be applied to the organic TFT 11 having another structure.

  In each of the above embodiments, the transfer substrate 20 is surface-treated before crystal growth of the organic semiconductor material 21 so that the organic semiconductor material 21 can be easily transferred from the transfer substrate 20. preferable. Specifically, a film that can be photo-patterned by irradiation with ultraviolet (UV) light, called self-assembled monolayers (hereinafter referred to as SAM (Self-Assembled Monolayers)), is formed in advance on the surface of the transfer substrate 20. . When transferring, ultraviolet light irradiation is performed to cut the bond between the self-assembled monolayer and the transfer substrate 20. Thereby, when the organic semiconductor material 21 is transferred from the transfer substrate 20 to the device forming substrate 12 side, the transfer can be easily performed.

  In the second embodiment, the source electrode 16 and the drain electrode 17 are formed in a predetermined layout with respect to the device forming substrate 12, and the transfer substrate 20 is parallel to the XY plane accordingly. Moved and rotated. On the other hand, if the orientation direction of the crystal for each crystal grain in the organic semiconductor material 21 formed on the transfer substrate 20 is analyzed, the pattern of each source electrode 16 and drain electrode 17 is changed based on the analysis result. You can also. Even in this case, the orientation direction of the crystal of the organic semiconductor material 21 can be aligned in a fixed direction with respect to the arrangement direction of the source electrode 16 and the drain electrode 17. In this case, the formation pattern of the source electrode 16 and the drain electrode 17 is changed every time according to the crystal orientation direction for each crystal grain in the organic semiconductor material 21. However, when the source electrode 16 and the drain electrode 17 are formed by an inkjet method or the like, the formation pattern can be easily changed.

11 Organic TFT
12 Device Formation Substrate 12a Alignment Mark 13 Gate Electrode 14 Gate Insulating Film 15 Organic Semiconductor Thin Film 16 Source Electrode 17 Drain Electrode 20 Transfer Substrate 20a Alignment Mark 21 Organic Semiconductor Material

Claims (7)

Preparing a transfer substrate (20) having an alignment mark (20a) and growing an organic semiconductor material (21) as a constituent material of the organic semiconductor thin film (15) on the transfer substrate;
Analyzing the orientation direction of the crystal of the organic semiconductor material on the transfer substrate with respect to the alignment mark;
The source electrode (16) of all of the plurality of organic field effect transistors at the formation position of the channel region in the device forming substrate (12) for forming the plurality of organic field effect transistors (11) with reference to the alignment mark. The organic semiconductor material is transferred from the transfer substrate to the device forming substrate by aligning the crystal orientation of the organic semiconductor material with respect to the arrangement direction of the drain electrode and the drain electrode (17) in a certain direction. And a step of forming a thin film. A method for manufacturing an organic semiconductor device comprising an organic field effect transistor.   In the step of forming the organic semiconductor thin film, the alignment direction of the source electrode and the drain electrode and the orientation direction of the crystal of the organic semiconductor material are made the same, and the organic semiconductor material is used for the device formation from the transfer substrate. The method for producing an organic semiconductor device having an organic field effect transistor according to claim 1, wherein the organic semiconductor device is transferred to a substrate.   3. The transfer step includes transferring the organic semiconductor material from the transfer substrate to the device forming substrate while avoiding a grain boundary in the crystal of the organic semiconductor material. Manufacturing method of organic semiconductor device provided with organic field effect transistor of this invention. Cutting the organic semiconductor material analyzed for the orientation orientation according to the shape of the channel region,
4. The transferring step, wherein the organic semiconductor material cut out in accordance with the shape of the channel region is transferred from the transfer substrate to the device forming substrate. The manufacturing method of the organic-semiconductor device provided with the organic field effect transistor of description. In the crystal growth step, the organic semiconductor material is crystal-grown after forming a self-assembled monomolecular film on the transfer substrate,
5. The transfer process according to claim 1, wherein, in the transfer step, the bond between the transfer substrate and the self-assembled monolayer is cut by irradiating with ultraviolet light before the transfer. A method for producing an organic semiconductor device comprising the organic field effect transistor according to one.   In the transferring step, the transfer substrate is horizontally moved and rotated in the plane direction of the transfer substrate, so that the organic semiconductor material is aligned with respect to the arrangement direction of the source electrode and the drain electrode of all of the plurality of organic field effect transistors. 6. The method of manufacturing an organic semiconductor device having an organic field effect transistor according to claim 1, wherein the crystal orientation is aligned in a certain direction. Forming a source electrode and a drain electrode of the plurality of organic field effect transistors,
In the step of forming the source electrode and the drain electrode, the arrangement of the source electrode and the drain electrode of all the plurality of organic field effect transistors based on the analysis result of the crystal orientation of the organic semiconductor material on the transfer substrate 6. The organic electric field according to any one of claims 1 to 5, wherein the source electrode and the drain electrode are patterned so that orientation directions of crystals of the organic semiconductor material with respect to a direction are aligned in a certain direction. Manufacturing method of organic semiconductor device provided with effect transistor.

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