JP2014230079A - Surface acoustic wave device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a surface acoustic wave device capable of improving isolation characteristics and miniaturizing. The wiring board, the first element substrate 2a, the first functional body 2b, the first wiring pattern 2c extending to the outer peripheral side of the first element substrate 2a, and the first wiring pattern 2c are electrically connected. A first electronic element 2 composed of a first element pad 2d connected to the second element substrate 3a, a second element substrate 3a located on the inner side of the outer periphery of the first element substrate 2a, a second functional body 3b, A second electronic element 3 including a second wiring pattern 3c extending to the outer peripheral side of the second element substrate 3a and a second element pad 3d electrically connected to the second wiring pattern 3c. The first electronic element 2 is arranged on the upper surface 5aa side of the wiring board 5 via the substrate 5, and the second electronic element 3 is arranged on the lower surface 5ab side of the wiring board 5. [Selection] Figure 2

Description

The present invention relates to a surface acoustic wave device including an electronic element such as a surface acoustic wave (SAW) element.

  A surface acoustic wave device is known in which surface acoustic wave elements having different passband frequencies are formed on the same element substrate. An example of such an apparatus is disclosed in Patent Document 1.

Japanese Patent Laid-Open No. 10-303680

  However, when the surface acoustic wave elements having different passband frequencies are, for example, a transmission filter and a reception filter, the transmission filter and the reception filter are formed on the same element substrate. And the received signal interfere with each other, so that the isolation characteristics are liable to deteriorate, and the size of the element substrate increases.

  The present invention has been made in view of the above problems, and an object of the present invention is to provide a surface acoustic wave device that can improve isolation characteristics and can be miniaturized.

  A surface acoustic wave device according to an aspect of the present invention forms a space between a wiring board having a plurality of connection conductor layers and the wiring board on the upper surface side of the wiring board via a first insulating layer. The first element substrate, the first function body provided on the first element substrate, and the first element body extending from the first function body to the outer peripheral side of the first element substrate. A first electronic element including a first wiring pattern and a first element pad electrically connected to the first wiring pattern; and the wiring on the lower surface side of the wiring board via a second insulating layer A second element substrate disposed inside the outer periphery of the first element substrate, which is disposed so as to form a space between the substrate and a second function provided on the second element substrate; A body, a second wiring pattern extending from the second functional body to the outer peripheral side of the second element substrate, and the second A second electronic element composed of a second element pad electrically connected to the wiring pattern, and a main surface opposite to the main surface on which the second functional body of the second element substrate is provided And a sealing resin layer provided on the outer periphery of the second element substrate so as to cover the side surface, and the first insulating layer is connected to the first element pad. The second insulating layer is provided with a second connection conductor connected to the second element pad, and one end of the sealing resin layer is electrically connected to the connection conductor layer. A plurality of internal through conductors to be connected to each other are provided so as to be located on the outer periphery of the second element substrate, and the first wiring pattern is provided at a position corresponding to the first connection conductor. Electrically connected to the internal through conductor via the connection conductor layer formed, Wiring pattern, and is characterized in that it is electrically connected to the internal through conductors via the connection conductor layer provided at a position corresponding to the second connecting conductor.

  According to the surface acoustic wave device of the present invention, the isolation characteristic can be improved and the device can be miniaturized.

(A) And (b) is a perspective view which shows the external appearance of the surface acoustic wave apparatus concerning embodiment of this invention, (c) is a top view of the surface acoustic wave apparatus of (a) and (b). (A) is sectional drawing in AA of the surface acoustic wave apparatus shown in FIG.1 (c), (b) is sectional drawing of the wiring board of the surface acoustic wave apparatus of (a). It is explanatory drawing for demonstrating the receiving filter of the surface acoustic wave apparatus shown to Fig.1 (a). It is explanatory drawing for demonstrating the transmission filter of the surface acoustic wave apparatus shown to Fig.1 (a). (A) is sectional drawing of the surface acoustic wave apparatus which shows the other example of embodiment of this invention, (b) is sectional drawing of the wiring board of the surface acoustic wave apparatus of (a). (A) is sectional drawing of the wiring board of the surface acoustic wave apparatus shown in FIG. 1, (b) is a top view for demonstrating the circuit pattern provided on the wiring board. (A) And (b) is explanatory drawing for demonstrating the ground potential pattern on a wiring board. (A)-(d) is sectional drawing for demonstrating the manufacturing method of an electronic element. (A)-(e) is sectional drawing for demonstrating the manufacturing method of a wiring board. It is sectional drawing for demonstrating the manufacturing method of the surface acoustic wave apparatus shown in FIG. (A) And (b) is sectional drawing for demonstrating the manufacturing method of the surface acoustic wave apparatus shown in FIG. (A) And (b) is sectional drawing for demonstrating the manufacturing method of the surface acoustic wave apparatus shown in FIG. (A) And (b) is sectional drawing for demonstrating the manufacturing method of the surface acoustic wave apparatus shown in FIG. (A)-(d) is sectional drawing for demonstrating the manufacturing method of another electronic element. It is sectional drawing for demonstrating the other manufacturing method of the surface acoustic wave apparatus shown in FIG. It is explanatory drawing for demonstrating the element mother board of a 1st electronic element. It is explanatory drawing for demonstrating the element mother board of a 2nd electronic element. It is explanatory drawing for demonstrating the wiring mother board of a wiring board. It is explanatory drawing for demonstrating the manufacturing method of the surface acoustic wave apparatus manufactured from an element mother board and a wiring mother board.

  Hereinafter, a surface acoustic wave device according to an embodiment of the present invention will be described with reference to the drawings. Note that the drawings used in the following description are schematic, and the dimensional ratios and the like on the drawings do not necessarily match the actual ones.

In the description of the embodiments and the like, components that are the same as or similar to those already described may be assigned the same reference numerals and descriptions thereof may be omitted.
<Embodiment>
Hereinafter, a surface acoustic wave device according to an embodiment of the present invention will be described with reference to FIGS. 1 to 6.

The surface acoustic wave device 1 according to the embodiment has a configuration as shown in FIGS. 1 to 4, and includes a wiring board 5 having a plurality of connection conductor layers 5c and a wiring board 5 via a first insulating layer 4a. A first element substrate 2a, a first functional body 2b provided on the first element substrate 2a, and a first functional substrate 2a disposed on the upper surface side so as to form a space S with the wiring substrate 5; From the functional body 2b to the first element substrate 2a
A first electronic element 2 comprising a first wiring pattern 2c extending to the outer peripheral side of the first wiring pattern 2 and a first element pad 2d electrically connected to the first wiring pattern 2c, and a second insulating layer 4b. A second element substrate 3a located on the inner side of the outer periphery of the first element substrate 2a, which is arranged so as to form a space S between the lower surface side of the wiring substrate 5 and the wiring substrate 5; A second functional body 3b provided on the second element substrate 3a, a second wiring pattern 3c extending from the second functional body 3b to the outer peripheral side of the second element substrate 3a, and a second wiring pattern 3c. Main surface 3ab opposite to main surface 3aa on which second electronic element 3 including second element pad 3d electrically connected and second functional body 3b of second element substrate 3a are provided. And a seal provided on the outer periphery of the second element substrate 3a so as to cover the side surface 3ac The first insulating layer 4a is provided with a first connection conductor 4a1 connected to the first element pad 2d, and the second insulating layer 4b is a second element pad. A second connection conductor 4b1 connected to 3d is provided, and the sealing resin layer 6 includes a plurality of internal through conductors 6a whose one ends are electrically connected to the connection conductor layer 5c. The first wiring pattern 2c is electrically connected to the internal through conductor 6a via a connection conductor layer 5c provided at a position corresponding to the first connection conductor 4a1. The connected second wiring pattern 3c is electrically connected to the internal through conductor 6a via a connection conductor layer 5c provided at a position corresponding to the second connection conductor 4b1.

  FIG. 1 is a schematic perspective view showing an appearance of a surface acoustic wave device according to an embodiment of the present invention, and FIG. 1A is a perspective view of the appearance of the surface acoustic wave device 1 as viewed from the upper surface 1a side. FIG. 1B is a perspective view of the appearance of the surface acoustic wave device 1 as viewed from the lower surface 1b side. FIG. 1C is a plan view of the surface acoustic wave device 1, and shows the positional relationship of the first element substrate 2a, the second element substrate 3a, and the internal through conductor 6a in the surface acoustic wave device 1. ing. FIG. 2 is a cross-sectional view taken along line AA of the surface acoustic wave device 1 shown in FIG.

  The surface acoustic wave device 1 may have either direction upward or downward, but for convenience of explanation, the orthogonal coordinate system XYZ is defined, and the positive side in the Z direction is upward and the word “upper surface” or “lower surface” is used. Shall.

  As shown in FIG. 1, the surface acoustic wave device 1 is formed in, for example, a substantially rectangular parallelepiped shape, and a plurality of external terminals 12 are provided in an appropriate shape and an appropriate number on the lower surface 1 b. A plurality of external terminals 12 are exposed from the lower surface 1b. The number, position, role, and the like of the plurality of external terminals 12 may be appropriately set according to the internal configuration of the surface acoustic wave device 1. For example, the plurality of external terminals 12 are provided in a square shape, but may be provided in a circular shape. Moreover, the structure which does not provide the external connection terminal 12 may be sufficient. In the present embodiment, the case where the four external terminals 12 are provided at the four corners of the lower surface 1b of the surface acoustic wave device 1 is illustrated. The upper surface 1a of the surface acoustic wave device 1 and the upper surface 2aa of the first element substrate 2a are the same surface, and the lower surface 1b of the surface acoustic wave device 1 and the lower surface of the sealing resin layer 6 are the same surface.

  The surface acoustic wave device 1 has a thickness of, for example, 0.4 (mm) to 1.5 (mm), and a side length of, for example, 0.5 (mm) to 2 ( mm). The thickness and the length of one side of the surface acoustic wave device 1 can be set to an appropriate thickness and length.

  In the surface acoustic wave device 1, the lower surface 1b is arranged to face a mounting substrate (not shown), and the external connection terminals 12 and connection pads (not shown) provided on the mounting substrate serve as solder bumps or the like. It is mounted on a mounting board by being electrically joined via.

  The surface acoustic wave device 1 receives, for example, a signal from any of the plurality of external terminals 12, performs a predetermined process on the input signal, and outputs a signal from any of the plurality of external terminals 12. To do.

  As shown in FIG. 1, the surface acoustic wave device 1 includes a sealing resin layer 6, a second electronic element 3, a second insulating layer 4 b, a wiring substrate 5, and a first substrate from the lower surface 1 b side. It has an insulating layer 4 a and a first electronic element 2. In addition, as shown in FIG. 2, the surface acoustic wave device 1 is formed so that the first functional body 2b of the first element substrate 2a forms a space S between the upper surface 5aa of the wiring substrate 5 and The second functional body 3b of the second element substrate 3a is disposed so as to form a space S between the lower surface 5ab of the wiring substrate 5.

  As shown in FIG. 2, the first electronic element 2 includes a first element substrate 2a and a first surface provided on a lower surface 2ab of the first element substrate 2a (a surface facing the upper surface 5aa of the wiring substrate 5). Functional body 2b, a first wiring pattern 2c extending from the first functional body 2b to the outer peripheral side of the first element substrate 2a, and a first element pad electrically connected to the first wiring pattern 2c 2d. The first element substrate 2a is arranged on the upper surface 5aa side of the wiring substrate 5 via the first insulating layer 4a so as to face the upper surface 5aa of the wiring substrate 5 so as to form a space S. Yes. In addition, the first electronic element 2 may have an appropriate member such as an electrode and / or a protective layer that covers the upper surface 2aa of the first element substrate 2a.

  On the other hand, as shown in FIG. 2, the second electronic element 3 is provided on the second element substrate 3a and the upper surface 3aa of the second element substrate 3a (the surface facing the lower surface 5ab of the wiring substrate 5). The second functional body 3b, the second wiring pattern 3c extending from the second functional body 3b to the outer peripheral side of the second element substrate 3a, and the second electrically connected to the second wiring pattern 3c It consists of an element pad 3d. The second element substrate 3a is disposed opposite to the lower surface 5ab of the wiring substrate 5 via the second insulating layer 4b so as to form a space S between the lower surface 5ab of the wiring substrate 5 and the second element substrate 3a. Yes. That is, the second element substrate 3a is disposed to face the first element substrate 2a with the wiring substrate 5 interposed therebetween.

  The second element substrate 3a is provided so that the outer dimension is smaller than the outer dimension of the first element substrate 2a and is located inside the outer periphery of the first element substrate 2a.

  As shown in FIG. 2, a first insulating layer 4a is provided between the first element substrate 2a and the wiring substrate 5, and the first insulating layer 4a is formed on the first element pad 2d. It is provided so that at least a part is exposed. As shown in FIG. 2, the first insulating layer 4a is provided between the first element substrate 2a and the wiring substrate 5 so as to surround the first functional body 2b. A first connection conductor 4a1 is provided on the first insulating layer 4a. The first connection conductor 4a1 is provided on the first element pad 2d exposed from the first insulating layer 4a, and is electrically connected to the first element pad 2d. As described above, the first connection conductor 4a1 is interposed between the first element pad 2d and the wiring board 5 to electrically join them.

  Further, as shown in FIG. 2, a second insulating layer 4b is provided between the second element substrate 3a and the wiring substrate 5, and the second insulating layer 4b is a second element pad. It is provided so that at least a part of 3d is exposed. As shown in FIG. 2, the second insulating layer 4b is provided between the second element substrate 3a and the wiring substrate 5 so as to surround the second functional body 3b. A second connection conductor 4b1 is provided on the second insulating layer 4b. The second connection conductor 4b1 is provided on the second element pad 3d exposed from the second insulating layer 4b, and the second connection conductor 4b1 is electrically connected to the second element pad 3d. It is connected. As described above, the second connection conductor 4b1 is interposed between the second element pad 3d and the wiring board 5 to electrically join them. The first connection conductor 4a1 and the second connection conductor 4b1 are made of a conductive material such as Ag paste, for example.

Thus, the first connection conductor 4a1 is provided so as to fill the opening of the first insulating layer 4a formed on the first element pad 2d. The second connection conductor 4b1 is provided so as to fill the opening of the second insulating layer 4b formed on the second element pad 3d. That is, the first connecting conductor 4a1 is provided on the first element pad 2d exposed from the first insulating layer 4, and the second connecting conductor 4b1 is the second element exposed from the second insulating layer 4b. It is provided on the pad 3d.

  The first insulating layer 4a includes a first functional body between the first element substrate 2a and the wiring board 5 in order to form a space S between the first functional body 2b and the wiring board 5. It is provided so as to surround 2b. Therefore, when the first element substrate 2a and the wiring substrate 5 are disposed to face each other, a region where the first insulating layer 4a is not provided becomes the space S.

  In addition, the first insulating layer 4b includes a second insulating layer 4b between the second element substrate 3a and the wiring substrate 5 in order to form a space S between the second functional body 3b and the wiring substrate 5. It is provided so as to surround the functional body 3b. Therefore, when the second element substrate 3a and the wiring substrate 5 are disposed to face each other, a region where the second insulating layer 4b is not provided becomes the space S.

  Therefore, the first insulating layer 4a secures the space S between the first functional body 2b and the wiring board 5 and protects the first functional body 2b surrounded by the first insulating layer 4a. It can be hermetically sealed. The second insulating layer 4b secures a space S between the second functional body 3b and the wiring board 5, and protects the second functional body 3b surrounded by the second insulating layer 4b. It can be hermetically sealed. The first insulating layer 4a and the second insulating layer 4b secure a space S for vibration on the first functional body 2b and the second functional body 3b, and the first functional body 2b and the second functional layer 2b. In order to hermetically seal the functional body 3b, the thickness is, for example, 5 (μm) to 10 (μm). The first insulating layer 4a and the second insulating layer 4b may have different thicknesses.

  Thus, in order to obtain the surface acoustic wave device 1 having excellent durability, the first insulating layer 4a and the second insulating layer 4b surround the first functional body 2b and the second functional body 3b. Are provided between the first element substrate 2 a and the wiring substrate 5 and between the second element substrate 3 a and the wiring substrate 5. Moreover, the 1st insulating layer 4a and the 2nd insulating layer 4b consist of resin materials, such as a photosensitive polyimide resin, for example.

  Here, the first electronic element 2 and the second electronic element 3 will be described below.

  The first electronic element 2 and the second electronic element 3 are, for example, surface acoustic wave elements or the like, and in this embodiment, the case of a surface acoustic wave element (SWA element) is illustrated.

The first element substrate 2a of the first electronic element 2 and the second element substrate 3a of the second electronic element 3 are piezoelectric substrates, and are formed in, for example, a generally thin rectangular parallelepiped shape as shown in FIG. Has been. The first element substrate 2a and the second element substrate 3a are made of a single crystal substrate having piezoelectricity, such as a lithium tantalate single crystal or a lithium niobate single crystal. The shapes of the first element substrate 2a and the second element substrate 3a may be set as appropriate, but are, for example, rectangular. In addition, the sizes of the first element substrate 2a and the second element substrate 3a may be appropriately set. For example, the thickness is 0.2 (mm) to 0.5 (mm), The length is 0.5 (mm) to 2 (mm).

  Further, the length of one side of the first element substrate 2a is set to be larger than the length of one side of the second element substrate 3a. That is, the length of one side of the second element substrate 3a is set so that the outer periphery of the second element substrate 3a is positioned inside the outer periphery of the first element substrate 2a in plan view.

  The first functional body 2b is provided on the lower surface 2ab of the first element substrate 2a, and the second functional body 3b is provided on the upper surface 3aa of the second element substrate 3a. The second functional body 3b is a SAW resonator.

  In this embodiment, the case where the 1st functional body 2b and the 2nd functional body 3b are comprised with the ladder type surface acoustic wave filter or the double mode type | mold surface acoustic wave filter is illustrated. The dual mode type surface acoustic wave filter is a receiving filter 20 of a duplexer, the ladder type surface acoustic wave filter is a transmission filter 30 of a duplexer, and these filters have different passband frequencies, The pass band frequency of the reception filter 20 is larger than the pass band frequency of the transmission filter 30. That is, the surface acoustic wave device 1 has filter characteristics that allow different frequencies to pass. Therefore, the surface acoustic wave device 1 can be used for a mobile phone terminal or the like as an antenna duplexer that demultiplexes signals of different frequencies such as transmission signals and reception signals.

  FIG. 3 shows a dual mode type surface acoustic wave filter, and FIG. 4 shows a ladder type surface acoustic wave filter. In the present embodiment, for example, the reception filter 20 is configured by a dual mode type surface acoustic wave filter, and the transmission filter 30 is configured by a ladder type surface acoustic wave filter. That is, in the surface acoustic wave device 1, one of the first electronic element 2 and the second electronic element 3 is the reception filter 20, and the other is the transmission filter 30. In the following description, the dual mode surface acoustic wave filter is referred to as the reception filter 20, and the ladder type surface acoustic wave filter is referred to as the transmission filter 30.

As shown in FIG. 3, the reception filter 20 is, for example, an IDT (InterDigital transducer).
) 20a and two IDTs 20b and two reflectors 20c, and the IDTs 20a and IDT2b are arranged adjacent to each other in the propagation direction of the surface acoustic wave. Further, the reflector 20c is arranged so as to be adjacent to the IDT 20b located outside, that is, so as to sandwich the IDT 20b from both sides. Further, as shown in FIG. 3, one comb-tooth electrode of each of the two IDTs 20b is electrically connected to each other.

Further, as shown in FIG. 3, the IDT 20a is engaged with each other (a plurality of electrode fingers 20).
It has a pair of comb electrodes arranged so that aa are alternately arranged. Each comb electrode of the IDT 20a includes a bus bar 20ab and a plurality of electrode fingers 20aa extending from the bus bar 20ab in a direction perpendicular to the longitudinal direction of the bus bar 20ab. The pitch of the plurality of electrode fingers 20aa is substantially constant. In practice, the IDT 20a may be provided with a plurality of pairs of comb electrodes having more electrode fingers 20aa.

Further, as shown in FIG. 3, the IDT 20b is configured to mesh with each other (a plurality of electrode fingers 20).
It has a pair of comb electrodes arranged so that ba alternates with each other. Each comb electrode of the IDT 20b includes a bus bar 20bb and a plurality of electrode fingers 20ba extending from the bus bar 20bb in a direction perpendicular to the longitudinal direction of the bus bar 20bb. The pitch of the plurality of electrode fingers 20ba is substantially constant. Actually, the IDT 20b may be provided with a plurality of pairs of comb-tooth electrodes having more electrode fingers 20ba.

  As shown in FIG. 3, the reflector 20c is provided so as to sandwich the IDT 20b from both sides, and has a pair of bus bars 20cb and a plurality of electrode fingers 20ca extending between the pair of bus bars 20cb. . The pitch of the plurality of electrode fingers 20ca is substantially constant, and is substantially the same as the pitch of the plurality of electrode fingers 20aa and 20ba of the IDT 20a and IDT 20b.

As shown in FIG. 3, an electric signal input to the comb bar electrode bus bar 20ab of the IDT 20a is converted into SAW (surface acoustic wave) and propagates in a direction orthogonal to the plurality of electrode fingers 20aa and 20ba. The SAW (surface acoustic wave) is converted again into an electric signal and output from the comb bar electrode bus bar 20bb of the IDT 20b. In this process, the frequency component outside the pass band of the electrical signal is attenuated. The pass band corresponds to a SAW (surface acoustic wave) frequency band in which the pitch of the plurality of electrode fingers 20aa is approximately a half wavelength. The reception filter 20 is optimized in design such as the pitch of the IDT 20aa according to desired characteristics. For example, when the pitch of the IDT 20a is narrowed, the passband frequency is increased.

  As shown in FIG. 4, the transmission filter 30 includes a SAW resonator 30A including an IDT 30a and two reflectors 30b. The reflector 30b is disposed so as to sandwich the IDT 30a from both sides. As shown in FIG. 3, the ladder type surface acoustic wave filter is configured by connecting a plurality of SAW resonators 30A in a ladder type (ladder type). In the present embodiment, the case where five SAW resonators 30A are connected is illustrated.

Further, as shown in FIG. 4, the IDT 30a is engaged with each other (a plurality of electrode fingers 30).
It has a pair of comb electrodes arranged so that aa are alternately arranged. Each comb electrode of the IDT 30a includes a bus bar 30ab and a plurality of electrode fingers 30aa extending from the bus bar 30ab in a direction perpendicular to the longitudinal direction of the bus bar 30ab. The pitch of the plurality of electrode fingers 30aa is substantially constant. Actually, the IDT 30a may be provided with a plurality of pairs of comb electrodes having more electrode fingers 30aa.

  As shown in FIG. 4, the reflector 30b is provided so as to sandwich the IDT 30a from both sides, and includes a pair of bus bars 30bb and a plurality of electrode fingers 30ba extending between the pair of bus bars 30bb. . The pitch of the plurality of electrode fingers 30ba is substantially constant and is substantially the same as the pitch of the plurality of electrode fingers 30aa of the IDT 30a.

  An electric signal input to one bus bar 30ab of the comb electrode of the SAW resonator 30A1 is converted into SAW (surface acoustic wave) and propagates in a direction orthogonal to the plurality of electrode fingers 30aa. Then, this SAW (surface acoustic wave) is again converted into an electric signal and output from the other bus bar 30ab of the comb electrode of the SAW resonator 30A1. Similarly, the electrical signal output from the bus bar 30ab of the SAW resonator 30A1 is input to one bus bar 30ab of the SAW resonator 30A2 and output from the other bus bar 30ab. Similarly, the SAW resonator 30A3 is input to one bus bar 30ab of the SAW resonator 30A3 and output from the other bus bar 30ab.

  Further, as shown in FIG. 4, the transmission filter 30 has a resonance frequency of the SAW resonator 30A1, the SAW resonator 30A2 and the SAW resonator 30A3 in series and an anti-resonance frequency of the SAW resonator 30A4 and the SAW resonator 30A5 in parallel. By combining them so as to match, characteristics as a bandpass filter can be obtained.

  In this process, the frequency component outside the pass band of the electrical signal is attenuated. The passband frequency corresponds to a SAW (surface acoustic wave) frequency band in which the pitch of the plurality of electrode fingers 30aa is approximately a half wavelength. The transmission filter 30 is optimized in design such as the pitch of the IDT 30a according to desired characteristics.

The first element substrate 2a is provided with a first wiring pattern 2c extending from the first functional body 2b. The first wiring pattern 2c is provided so as to extend from the first functional body 2b to the outer peripheral side of the first element substrate 2a. Further, as shown in FIG. 2, the second element substrate 3a is provided with a second wiring pattern 3c extending from the second functional body 3b. The second wiring pattern 3c is provided so as to extend from the second functional body 3b to the outer peripheral side of the second element substrate 3a. The first wiring pattern 2c and the second wiring pattern 3c serve as input / output paths of electric signals to the electrodes of the SAW resonator.

  The first element pad 2d is provided on the first wiring pattern 2c and is electrically connected to the first wiring pattern 2c. The second element pad 3d is provided on the second wiring pattern 3c and is electrically connected to the second wiring pattern 3c. That is, the first wiring pattern 2c electrically connects the first functional body 2b and the first element pad 2d, and the second wiring pattern 3c includes the second functional body 3b and the second functional body 2b. The element pad 3d is electrically connected.

  For example, assuming that the first electronic element 2 is the reception filter 20, the first wiring pattern wiring 2c electrically connects the bus bar 20ab and the first element pad 2d. The first wiring pattern 2c extends from the first functional body 2b (reception filter 20) to the outer peripheral side of the first element substrate 2a. The first element substrate 2a is provided with an intermediate wiring that connects the IDTs 20b.

  For example, if the second electronic element is the transmission filter 30, the second wiring pattern wiring 3c electrically connects the bus bar 30ab and the second element pad 3d. The second wiring pattern 3c extends from the second functional body 3b (transmission filter 30) to the outer peripheral side of the second element substrate 3a. Further, the second element substrate 3a is provided with an intermediate wiring for connecting the IDTs 30a.

  Further, the first wiring pattern 2c and the second wiring pattern 3c may extend linearly or curvedly on the outer peripheral side, or may be bent. The first wiring pattern 2c and the second wiring pattern 3c may extend with a constant width, may gradually change in width, or may change in width step by step. Good. Therefore, the first wiring pattern 2c and the second wiring pattern 3c are arranged in the arrangement of the first functional body 2b and the second functional body 3b provided on the first element substrate 2a and the second element substrate 3a. It is set appropriately according to the arrangement of the first element pad 2d and the second element pad 3d.

  The first element pad 2d is for supplying power to the IDT 20a, for example, and is provided on the first wiring pattern 2c so as to be electrically connected to the first wiring pattern 2c. The second element pad 3d is, for example, for supplying power to the IDT 30a, and is provided on the second wiring pattern 3c so as to be electrically connected to the second wiring pattern 3c. Yes.

  The first element pad 2d is provided in the peripheral portion of the lower surface 2ab of the first element substrate 2a, and the second element pad 3d is provided in the peripheral portion of the upper surface 3aa of the second element substrate 3a. It has been. The sizes of the first element pad 2d and the second element pad 3d are appropriately set according to the configuration of the first functional body 2b and the second functional body 3b.

  The first functional body 2b and the first wiring pattern 2c can be formed of the same material, for example. Further, the first functional body 2b and the first wiring pattern 2c can be formed simultaneously.

  Similarly, the second functional body 3b and the second wiring pattern 3c can be formed of the same material, for example. The second functional body 3b and the second wiring pattern 3c can be formed simultaneously.

The first functional body 2b and the first wiring pattern 2c are both Al or Al alloy (
For example, Al-Cu system or Al-Ti system, Cu or Cu alloy (for example, Cu-Mg system, Cu-Ti system or Cu-Rd system), Ag or Ag alloy (for example, Ag-Mg system, Ag--) Ti-based or Ag-Rd-based) or other metal material can be used. Moreover, the first functional body 2b and the first wiring pattern 2c may be partially formed of different materials.

  The second functional body 3b and the second wiring pattern 3c can be formed of the same material as that of the first functional body 2b and the first wiring pattern 2c.

  The first element pad 2d and the second element pad 3d are made of, for example, Al or Al alloy (for example, Al—Cu type or Al—Ti type), Cu or Cu alloy (for example, Cu—Mg type, Cu, etc.). -Ti-based or Cu-Rd-based), Ag or Ag alloy (for example, Ag-Mg-based, Ag-Ti-based, or Ag-Rd-based) can be used.

  The first element pad 2d is preferably formed with a plating layer on the surface for the purpose of improving the bonding property with the corresponding first connection conductor 4a1. Similarly, it is preferable to form a plating layer on the surface of the second raw pad 3d for the purpose of improving the bonding property with the corresponding second connection conductor 4b1. The plating layer is formed, for example, by performing chromium plating, nickel plating, and gold plating on the surface of the first element pad 2d and the second element pad 3d.

  As shown in FIG. 2, the surface acoustic wave device 1 is provided with a protective film 2e so as to cover the first functional body 2b of the first element substrate 2a, and the second element substrate 3a has a second A protective film 3e is provided so as to cover the functional body 3b. The protective film 2e and the protective film 3e contribute to the prevention of oxidation of the first functional body 2b and the second functional body 3b. Moreover, the protective film 2e and the protective film 3e suppress the short circuit which generate | occur | produces, for example when a conductive foreign material adheres between the electrode fingers of IDT20a, IDT20b, and the reflector 20c, or between the electrode fingers of IDT30a and the reflector 30b. be able to.

  The protective film 2e and the protective film 3e are made of an insulating material such as silicon oxide, aluminum oxide, titanium oxide, silicon nitride, or silicon. The thickness of the protective film 2e and the protective film 3e is, for example, 8 (nm) to 15 (nm). Further, the protective film 2e and the protective film 3e may be provided with different thicknesses.

  The protective film 2e is provided over substantially the entire lower surface 2ab of the first element substrate 2a, covers the first functional body 2b and the first wiring pattern 2c, and covers only the region where the first element pad 2d is formed. It is provided to be exposed.

  The protective film 3e is provided over substantially the entire upper surface 3aa of the second element substrate 3a, covers the second functional body 3b and the second wiring pattern 3c, and is a region where the second element pad 3d is formed. It is provided to expose only.

  That is, the protective film 2e is provided over almost the entire lower surface 2ab of the first element substrate 2a except for the region where the first element pads 2d are provided. The protective film 3e is provided over almost the entire upper surface 3aa of the second element substrate 3a except for the region where the second element pads 3d are provided.

In this case, the protective film 2e is provided so as to cover the first functional body 2b and the first wiring pattern 2c, and the formation region of the first element pad 2d is formed using a known photolithography method or the like. After the exposure, the first element pad 2d is provided on the first wiring pattern 2c exposed from the protective film 2e. Similarly, the protective film 3e is provided so as to cover the second functional body 3b and the second wiring pattern 3c, and the formation region of the second element pad 3d is exposed using a known photolithography method or the like. After that, the second element pad 3d is provided on the second wiring pattern 2c exposed from the protective film 3e. The surface acoustic wave device 1 may have a configuration in which the protective film 2e and the protective film 3e are not provided.

  Here, the wiring board 5 will be described below.

  The wiring substrate 5 is disposed so as to first face the element substrate 2a via the first insulating layer 4a, and so as to face the second element substrate 3a via the second insulating layer 4b. Has been placed. Further, as shown in FIG. 2, the wiring board 5 includes a plurality of connection conductor layers 5c for electrical connection with the first element substrate 2a and the second element substrate 3a. As shown in FIG. 2, the connection conductor layer 5c includes a through conductor 5c3 that penetrates the upper and lower surfaces of the wiring board 5, a conductor layer 5c1 provided on the upper surface of the through conductor 5c3, and a conductor layer provided on the lower surface of the through conductor 5c3. 5c2.

  Thus, the wiring board 5 is formed on the insulator 5a, the through conductor 5c3 penetrating the insulator 5a in the vertical direction, the conductor layer 5c1 formed on the top surface of the through conductor 5c3, and the bottom surface of the through conductor 5c3. Conductor layer 5c2. Furthermore, the wiring board 5 is provided with connection terminal pads 5d on the conductor layer 5c2 formed on the lower surface 5ab of the insulator 5a.

  The conductor layer 5c1 of the connection conductor layer 5c is electrically connected to the first connection conductor 4a1, and the conductor layer 5c2 is electrically connected to the second connection conductor 4b1.

  As shown in FIG. 1, the insulator 5a of the wiring board 5 is formed in, for example, a generally thin rectangular parallelepiped shape. The insulator 5a is formed including, for example, a resin, a ceramic, and / or an amorphous inorganic material. The insulator 5a may be made of a single material, or may be made of a composite material such as a substrate in which a base material is impregnated with a resin. Further, the insulator 5a may be one in which a fiber layer having excellent rigidity is provided inside the resin.

  Moreover, in the wiring board 5, the insulator 5a specifically includes an aluminum oxide sintered body, an aluminum nitride sintered body, a mullite sintered body, a silicon carbide sintered body, a glass ceramic sintered body, or the like. These ceramic materials are used. Alternatively, in the wiring board 5, the insulator 5a is made of an organic resin material such as polyimide resin, cyanate resin, epoxy resin, or polyphenylene ether resin. Furthermore, a composite material obtained by mixing an inorganic material such as ceramic or glass with an organic resin material such as an epoxy resin can also be used.

  The conductor layer 5c1 and the conductor layer 5c2 are made of a metal material such as copper, tungsten, or molybdenum, for example. Similarly, the through conductor 5c3 is formed of a metal material such as copper, tungsten, or molybdenum.

  The wiring board 5 may be the same as a general wiring board manufacturing method, and an example of the manufacturing method of the wiring board 6 is shown below.

In the wiring substrate 5, first, the insulator 5a is formed with the conductor layer 5c2 on the lower surface 5ab by using a well-known photolithography method or the like. And as for this insulator 5a, the through-hole which penetrates the insulator 5a is formed on the conductor layer 5c2 from the upper surface 5aa using laser processing or drilling. Next, after the insulator 5a is provided with a metal material such as copper on the upper surface 5aa, the through conductor 5c3 is formed in the through hole and the conductor layer 5c1 is formed on the upper surface 5aa by using a well-known photolithography method or the like. Is done. The wiring board 5 is obtained through such a manufacturing process.

  As shown in FIG. 2, the sealing resin layer 6 covers the lower surface 3ab (the main surface opposite to the main surface on which the second functional body 3b is provided) and the side surface 3ac of the second element substrate 3a. Is provided. That is, the sealing resin layer 6 is provided so as to cover the lower surface 3ab of the second element substrate 2a and the side surface 3ac of the second element substrate 2. Thus, the sealing resin layer 6 covers the region excluding the main surface provided with the second functional body 3b and surrounds the second element substrate 3a on the outer peripheral portion of the second element substrate 3a. Is provided.

  As described above, the sealing resin layer 6 is provided on the outer peripheral portion of the second element substrate 3a, and a plurality of internal through conductors 6a are provided on the outer periphery of the second element substrate 3a. It is provided so that it may be located in a part. One end of the internal through conductor 6 a is electrically connected to the connection conductor layer 5 c of the wiring substrate 5, and the other end is connected to the external terminal 12. In the case of the present embodiment, as shown in FIG. 1C, the case where four internal through conductors 6a are provided around the second element substrate 3a is illustrated. The first wiring pattern 2c is electrically connected to the internal through conductor 6a via the first connection conductor 4a1 and the connection conductor layer 5c.

  In addition, the surface acoustic wave device 1 is provided with an internal through conductor 6a so as to overlap the first element substrate 2a in a plan view, and the wiring board 5 is mounted on a mounting board such as an electronic device via the internal through conductor 6a. Is electrically connected. As described above, the surface acoustic wave device 1 is provided so that the connection portion with the mounting substrate is located inside the outer periphery of the first element substrate 2a, and this connection portion is the outer periphery of the first element substrate 2a. Since it is not located outside, it can be reduced in size.

  The second wiring pattern 3c is electrically connected to the internal through conductor 6a via the second connection conductor 4b1 and the connection conductor layer 5c. The thickness of the sealing resin layer 6 is, for example, 0.3 (mm) to 0.4 (mm). The sealing resin layer 6 is made of a resin material such as an epoxy resin, for example.

  Further, as shown in FIG. 2, a connection terminal pad 5d is provided between the connection conductor layer 5c and the internal through conductor 6a, and the connection terminal pad 5d provides electrical connection with the internal through conductor 6a. Provided to ensure. Moreover, the structure which does not provide the connection terminal pad 5d may be sufficient.

  As described above, in the surface acoustic wave device 1, as shown in FIGS. 1 and 2, the outer peripheral side surfaces of the first element substrate 2, the first insulating layer 4 a, the wiring substrate 5, and the sealing resin layer 6 are the same plane. It is provided so that it may be located inside. As a result, the surface acoustic wave device 1 has a uniform outer peripheral side surface, so that mounting accuracy is improved when mounting on a mounting substrate such as an electronic device, and higher-density mounting becomes possible.

  In the surface acoustic wave device 1, the first electronic element 2 is provided on the upper surface 5aa side of the wiring board 5, the second electronic element 3 is provided on the lower surface 5ab side of the wiring board 5, and the first electronic element 2 is provided. Since the electronic element 2 and the second electronic element 3 are arranged on the upper surface 5aa side and the lower surface 5ab side with the wiring board 5 interposed therebetween, the signals of the first electronic element 2 and the second electronic element 3 interfere with each other. It becomes difficult to improve the isolation characteristics. That is, in the surface acoustic wave device 1, the first element substrate 2a and the second element substrate 3a are arranged to face each other with the wiring substrate 5 therebetween, and one of the reception filter 20 and the transmission filter 30 is the first. Since the other element substrate 2a is provided on the second element substrate 3a, the reception signal and the transmission signal are less likely to interfere with each other, and the isolation characteristics can be improved.

In the surface acoustic wave device 1, the first electronic element 2 is provided on the first element substrate 2 a, the second electronic element 3 is provided on the second element substrate 3 a, and the first electronic element 2 and the second electronic element 3 are provided on the first element substrate 2a and the second element substrate 3a, which are different from each other, respectively, the dimensions of the first element substrate 2a and the second element substrate 3a are reduced. be able to. As a result, the surface acoustic wave device 1 can easily cope with high-density mounting.

  Further, the surface acoustic wave device 1 has a configuration in which the first electronic element 2 and the second electronic element 3 face each other with the wiring board 5 interposed therebetween, and each of which has a filter function, can do. In the surface acoustic wave device 1, the first electronic element 2 and the wiring board 5 are arranged to face each other through the space S, and the second electronic element 3 and the wiring board 5 are arranged to face each other through the space S. Therefore, the first electronic element 2 and the second electronic element 3 can be downsized by arranging them in the vertical direction.

  In the surface acoustic wave device 1, it is preferable that the first electronic element 2 is constituted by the reception filter 20 and the second electronic element 3 is constituted by the transmission filter 30. Since the transmission filter 30 is more exothermic than the reception filter 20, the surface acoustic wave device 1 is provided so as to surround the second electronic element 2 by using the second electronic element 3 as the transmission filter 30. The heat generated in the second electronic element 3 can be effectively dissipated through the sealing resin layer 6. Thereby, the surface acoustic wave device 1 can improve the heat dissipation of the transmission filter 30 of the second electronic element 3. By adopting such a configuration, the surface acoustic wave device 1 can obtain stable electrical performance.

  As shown in FIG. 2, the surface acoustic wave device 1 is composed of a wiring substrate 5 consisting of one layer, but as shown in FIG. 5, a two-layer wiring substrate 5A consisting of an insulator 5a and an insulator 5b. It may be comprised. FIG. 5 illustrates a case where the surface acoustic wave device 1 </ b> A includes a two-layer wiring board 5 </ b> A composed of an insulator 5 a and an insulator 5 b <b> 7. The surface acoustic wave device 1A is different from the surface acoustic wave device 1 in the configuration of the wiring board 5A.

  As shown in FIG. 5B, the wiring board 5A penetrates the insulator 5a, the insulator 5b, the conductor layer 5c4 formed on the upper surface 5ba of the insulator 5b, and the insulator 5b in the vertical direction. And a through conductor 5c5. The conductor layer 5c1 and the conductor layer 5c4 are electrically joined through the through conductor 5c5. The connection conductor layer 5c includes a through conductor 5c5, a conductor layer 5c4 on the top surface of the through conductor 5c5, and a conductor layer 5c1 on the bottom surface of the through conductor 5c5. Note that the material and the like of the wiring board 5A can be the same as that of the wiring board 5.

  As described above, the surface acoustic wave device 1A is composed of the two-layer wiring board 5A composed of the insulator 5a and the insulator 5b, that is, a so-called multilayer wiring board. You may be comprised with the multilayer wiring board to laminate | stack.

  Further, the two-layer wiring board 5A is formed by forming a conductor layer in which a copper foil is patterned on an insulator in which an insulator 5a and an insulator 5b are impregnated and cured with an organic resin on a base material made of glass fiber, for example. Alternatively, an insulator and a conductor layer may be alternately laminated. The two-layer wiring board 5A composed of the insulator 5a and the insulator 5b is manufactured by stacking the insulator 5a and the insulator 5b by using, for example, a build-up method.

In addition, the two-layer wiring board 5A includes an insulator 5a and an insulator 5b in which, for example, an insulator (insulating layer) and a conductor layer are laminated on a support substrate (core substrate), and the insulator is further formed by a build-up method. It may have a structure of a so-called coreless substrate in which the support substrate (core substrate) is removed after laminating the (insulating layer) and the conductor layer. The number of insulators stacked by the build-up method can be appropriately set according to the internal configuration of the surface acoustic wave device 1 and the like. By adopting the coreless substrate, the two-layer wiring substrate 5A can be made thin as the insulator 5a and the insulator 6a and further thin as a whole.

  As shown in FIG. 6, the surface acoustic wave device 1A can provide the circuit pattern 8 on the upper surface 5aa of the insulator 5a by using the two-layer wiring board 5A.

  Here, an example of the circuit pattern 8 will be described with reference to FIG.

  As shown in FIG. 6, the circuit pattern 8 is provided on the upper surface 5aa of the insulator 5a. That is, the circuit pattern 8 is provided between the insulator 5a and the insulator 5b. As shown in FIG. 6, the circuit pattern 8 is formed on the insulator 5a at the same time as the conductor layer 5c1, and is electrically connected to the conductor layer 5c1. In other words, the circuit pattern 8 is provided continuously from the conductor layer 5c1 on the same plane on the insulator 5a, and the first element pad of the first electronic element 2 via the through conductor 5c5 and the conductor layer 5c4. 2a is electrically connected. The circuit pattern is electrically connected to the second element pad 3d of the second electronic element 3 through the through conductor 5a3 and the conductor layer 5c2.

  The circuit pattern 8 is, for example, a capacitance pattern 8a and a spiral line-shaped inductor pattern 8b. The inductor pattern 8b forms an inductor, and the capacitor pattern 8a forms a capacitor.

  When the surface acoustic wave device 1A is configured by combining the first electronic element 2 and the second electronic element 3 with a peripheral circuit, the peripheral circuit includes, for example, an inductor element for an inductor and a capacitive element for a capacitor. Or it is comprised by the combination of the resistive element for resistance, etc. The peripheral circuit is, for example, a matching element or an LC filter.

  In the circuit pattern 8, for example, a GND pattern 8A can be formed on the lower surface 5ab of the insulator 5a so as to face the capacitance pattern 8a, and a capacitance can be formed between the GND pattern 8A and the capacitance pattern 8a.

  As described above, the surface acoustic wave device 1A can form, for example, an LC filter including an inductor and a capacitor with the circuit pattern 8 on the insulator 5a. Therefore, the first functional body using the LC filter as a peripheral circuit. 2b and the second functional body 3b can be provided in combination. Further, the circuit pattern 8 is not limited to the capacitance pattern 8a or the inductor pattern 8b. For example, a resistance pattern or the like may be provided on the upper surface 5aa of the insulator 5a.

  Therefore, in the surface acoustic wave device 1A, the circuit pattern 8 is provided on the same plane between the insulator 5a and the insulator 5b to form a capacitor or an inductor. It becomes unnecessary. Therefore, the surface acoustic wave device 1 </ b> A can be prevented from being increased in size, and can be reduced in size and thickness. Further, since the circuit pattern 8 is provided so as to be built in between the insulator 5a and the insulator 5b, the surface acoustic wave device 1A is in the plane direction (XY plane) as before the circuit pattern 8 is provided. Therefore, the increase in the substrate size is suppressed.

  In addition, the surface acoustic wave device 1A can provide the circuit pattern 8 between the insulator 5a and the insulator 5b by using the two-layer wiring board 5A, so that the degree of freedom in designing the circuit pattern 8 is high. Become.

In addition, the surface acoustic wave device 1A can form a capacitor, an inductor, or the like inside the surface acoustic wave device 1A as compared with the case where an external component is used. Generation of unnecessary inductor components can be suppressed. in this way,
The surface acoustic wave device 1A can be reduced in size and thickness, and can be improved in performance.

  The manufacturing method of the two-layer wiring board 5A is the same as the manufacturing method of a general two-layer wiring board, and an example of the manufacturing method of the two-layer wiring board 5A is shown below.

  After laminating the insulator 5b on the insulator 5a, the through conductor 5c5 and the conductor layer 5c4 are formed in the same manner. Thus, a two-layer wiring board 5A in which the insulator 5b is laminated on the insulator 5a is manufactured.

  As described above, in the insulator 5a, the conductor layer 5c1 is formed on the upper surface 5aa of the insulator 5a, the through conductor 5c3 is formed through the insulator 5a in the vertical direction, and the conductor layer 5c2 is formed on the lower surface of the insulator 5a. 5ab and is electrically connected to the through conductor 5c3. Thus, the conductor layer 5c1 and the conductor layer 5c2 are provided on the upper and lower surfaces of the through conductor 5c3.

  In the insulator 5b, the conductor layer 5c4 is formed on the upper surface 5ba of the insulator 5b, and the through conductor 5c5 is formed so as to penetrate the insulator 5b in the vertical direction. Thus, the conductor layer 5c4 and the conductor layer 5c1 are provided on the upper and lower surfaces of the through conductor 5c5. In this way, a two-layer wiring board 5A composed of the insulator 5a and the insulator 5b can be manufactured.

  In the surface acoustic wave device 1, a ground potential pattern 5ad is provided on the upper surface (main surface) 5aa of the wiring board 5, as shown in FIG. In the surface acoustic wave device 1A, as shown in FIG. 7, a ground potential pattern 5bd is provided on the upper surface (main surface) 5ba of the wiring board 5A. That is, the ground potential pattern 5ad is provided on the upper surface (main surface) 5aa of the wiring board 5 so as to face the first functional body 2b. Similarly, the ground potential pattern 5bd is connected to the first functional body 2b. It is provided on the upper surface (main surface) 5ba of the wiring board 5A so as to face each other.

  The ground potential pattern 5ad (5bd) is held at the ground potential in order to provide a shielding effect. The ground potential pattern 5ad (5bd) is a solid pattern in a region excluding the conductor layers 5c1 (5c4) and the like on the upper surface 5aa (5ba) of the wiring board 5. Is provided. The ground potential pattern 5ad (5bd) is preferably provided in a wide area on the upper surface 5aa (5ba) of the wiring board in order to obtain a more effective shielding effect.

  As described above, since the ground potential pattern 5ad (5bd) is provided on the wiring substrate 5 (5A) between the first electronic element 2 and the second electronic element 3, due to the shielding effect of the ground potential pattern, In the surface acoustic wave device 1 (1A), the signals of the first electronic element 2 and the second electronic element 3 are less likely to interfere with each other, and the isolation characteristics can be further improved.

  That is, in the surface acoustic wave device 1 (1A), the first element substrate 2a and the second element substrate 3a are arranged to face each other via the wiring substrate 5 provided with the ground potential pattern 5ad (5bd). Since one of the reception filter 20 and the transmission filter 30 is provided on the first element substrate 2a and the other is provided on the second element substrate 3a, the reception signal and the transmission signal are less likely to interfere with each other. Isolation characteristics can be further improved.

  The ground potential pattern 5ad (5bd) may be provided on the lower surface 5ab of the wiring board 5 (5A). That is, the ground potential pattern 5ad (5bd) may be provided on the lower surface 5ab of the wiring board 5 (5A) so as to face the second functional body 3b.

  Here, a manufacturing method of the surface acoustic wave device 1 will be described below.

  First, the manufacturing method of the 1st electronic element 2 and the 2nd electronic element 3 is demonstrated below. In FIG. 8, the manufacturing method of the first electronic element 2 will be described as an example. The second electronic element 3 can be manufactured by the same manufacturing method as that for the first electronic element 2.

  FIG. 8A to FIG. 8D are views for explaining a manufacturing method of the first electronic element 2 and are cross-sectional views corresponding to the first electronic element 2 shown in FIG. In FIG. 8, the lower surface 2ab of the first element substrate 2a is shown on the upper side.

  8A to 8D, only the part corresponding to the first element substrate 2a of one surface acoustic wave device 1 (1A) is shown in FIG. 8A to FIG. 8D. Show. A similar manufacturing process is also applied when the first electronic element 2a is manufactured using the element mother board 2A from which a plurality of first electronic elements 2 are obtained by division. 8A to 8D, a plurality of first electronic elements 2 can be provided on the element mother board 2A as shown in FIGS. 15 and 16. In addition, a plurality of second electronic elements 3 can be provided on the element mother board 3A.

  As shown in FIG. 7, the first electronic element 2 is formed on the lower surface 2ab of the piezoelectric substrate of the first element substrate 2a by going through the steps of FIGS. 8A to 8D. One functional body 2b, a first wiring pattern 2c, a first element pad 2d, and a protective film 2e are formed.

Specifically, in the formation of the first functional body 2b and the first wiring pattern 2c, first, a thin film forming method such as sputtering, vapor deposition, or CVD (Chemical Vapor Deposition) is used, as shown in FIG. ), A metal layer is formed on the lower surface 2ab of the first element substrate 2a. Next, this metal layer is patterned using a known photolithography method or the like. By this patterning, as shown in FIG. 8B, the first functional body 2b and the first wiring pattern 2c are formed on the first element substrate 2a. The first functional body 2b is, for example, an IDT 20a and a reflector 20b (SAW resonator), and these are formed on the first element substrate 2a.

  Further, when the first functional body 2b and the first wiring pattern 2c are formed on the first element substrate 2a, as shown in FIG. 8C, thin film formation such as sputtering, vapor deposition or CVD is performed. Using a method, a protective film 2e is formed on the first element substrate 2a so as to cover the first functional body 2b and the first wiring pattern 2c. Then, the protective film 2e is patterned using a known photolithography method or the like. By this patterning, an opening in which the first element pad 2d is provided is formed on the first wiring pattern 2c.

  Then, a metal layer is formed on the first element substrate 2a so as to cover the protective film 2e by using a thin film forming method such as sputtering, vapor deposition, or CVD. Then, patterning is performed on the metal layer using a known photolithography method or the like. By this patterning, as shown in FIG. 8D, the first element pad 2d is formed on the first wiring pattern 2c.

  In this way, the first electronic device 2 is manufactured through the manufacturing steps shown in FIGS. 8A to 8D. Similarly, the second electronic element 3 is manufactured through the manufacturing steps shown in FIGS. 8A to 8D.

Next, a method for manufacturing the wiring board 5A will be described below. In FIG. 9, a manufacturing method of the wiring board 5A will be described as an example. The wiring board 5 can be manufactured by the same manufacturing method as the wiring board 5A. FIG. 9 illustrates the case where the first insulating layer 4a is provided on the wiring board 5A.

  FIG. 9A to FIG. 9E are views for explaining a method of manufacturing the wiring board 5A, and are cross-sectional views corresponding to the wiring board 5A shown in FIG.

  9A to 9E show only a portion corresponding to the wiring substrate 5A of one surface acoustic wave device 1A. A similar manufacturing process is also applied when manufacturing the wiring board 5A using the wiring mother board 5AA from which a plurality of wiring boards 5A are obtained by division. 9A to 9E, the wiring mother board 5AA can be provided with a plurality of wiring boards 5A as shown in FIG.

  First, as shown in FIG. 9A, a two-layer wiring board 5A composed of an insulator 5a and an insulator 5b is prepared. The two-layer wiring board 5A is manufactured by laminating the insulator 5a and the insulator 5b by using, for example, a build-up method.

  Next, as shown in FIG. 9B, for example, an insulating material is formed over the upper surface 5ba of the insulator 5b so as to cover the conductor layer 5c4. The first insulating layer 4 is made of this insulating material. The insulating material (first insulating layer 4) is formed using, for example, a coating method, a printing method, a vapor deposition method, or a thin film forming method such as CVD.

  As shown in FIG. 9C, when an insulating material is provided on the insulator 5b, the insulating material is patterned using a known photolithography or the like, and the patterned insulating material is the insulator. 5b is formed. As shown in FIG. 9C, this patterning is performed so that the formation region of the first connection conductor 4a1 is exposed, and an opening is formed in the insulating material on the conductor layer 5c4. In this way, the first insulating layer 4a is formed on the upper surface 5ba of the insulator 5b with the opening on the conductor layer 5c4.

  The first connection conductor 4a1 is, for example, Ag paste, and is formed on the conductor layer 5c4 exposed from the first insulating layer 4a, as shown in FIG. 9D. That is, the first connection conductor 4a1 is provided so as to fill the opening of the first insulating layer 4a on the conductor layer 5c4. The first connection conductor 4a1 is formed on the conductor layer 5c4 using, for example, a printing method or a dispensing method.

  Here, an example of the formation of the first insulating layer 4a on the insulator 5b is shown below.

  The first insulating layer 4a is, for example, a solder resist, and the solder resist is formed on the insulator 5b by using a printing method. And a soldering resist is temporarily dried, for example by heat-processing for 20-30 (min) at 80 (degreeC). Next, the solder resist is irradiated with ultraviolet rays through a negative film, and only the region where the first insulating layer 4a is to be provided is cured. Furthermore, the uncured region of the solder resist is removed with an alkaline aqueous solution or the like, and is subjected to a heat treatment at 150 (° C.) for 60 (minutes), for example, and finally cured. Then, a patterned solder resist is provided on the insulator 5b. In this way, the first insulating layer 4a is provided on the insulator 5b of the two-layer wiring board 5A. The first insulating layer 4a is made of a material such as an epoxy resin or a polyimide resin in addition to the solder resist.

As shown in FIG. 9E, the adhesive layer 7 is formed on the first insulating layer 4a except for the region where the first connection conductor 4a1 is provided. The adhesive layer 7 is made of an insulating material such as an epoxy resin, for example, and is formed on the first insulating layer 4a by using, for example, a printing method or a photolithography method. The adhesive layer 7 may be provided on the first element substrate 2a. Further, the first insulating layer 4a can be made of a material having an adhesive function, whereby the adhesive layer 7 can be omitted.

  Here, the bonding between the wiring substrate 5A and the first element substrate 2a and the bonding between the wiring substrate 5A and the second element substrate 3a will be described below with reference to FIGS. 10 to 13, the adhesive layer 7 is omitted. 10 to 13 show only a portion corresponding to one surface acoustic wave device 1A.

  As shown in FIG. 10, the first element substrate 2a is disposed to face the upper surface 5ba side of the wiring substrate 5A, and the second element substrate 3a is disposed to face the lower surface 5ab side of the wiring substrate 5A. A space S is formed by the first insulating layer 4a between the first element substrate 2a and the wiring substrate 5A. Further, a space S is formed by the second insulating layer 4b between the second element substrate 3a and the wiring substrate 5A.

  As shown in FIG. 11A, the first element substrate 2a and the wiring substrate 5A are joined via the adhesive layer 7 on the first insulating layer 4a, and the second element substrate 3a and the wiring substrate are joined. 5A is bonded via the adhesive layer 7 on the second insulating layer 4b. In this case, the first element pad 2d of the first element substrate 2a and the first connection conductor 4a1 of the first insulator 4a are bonded to face each other to obtain an electric bond. In addition, the second element pad 3d of the second element substrate 3a and the second connection conductor 4b1 of the second insulating layer 4b are bonded to face each other to obtain an electric bond. That is, the first element pad 2d of the first element substrate 2a and the conductor layer 5c4 of the wiring substrate 5A are electrically joined via the first connection conductor 4a1. In addition, the second element pad 3d of the second element substrate 3a and the conductor layer 5c2 of the wiring substrate 5A are electrically joined through the second connection conductor 4b1.

  The wiring substrate 5A, the first element substrate 2a, and the second element substrate 3a are bonded together by, for example, heat curing at 150 (° C.) for 60 (min) while applying pressure. The electrical joining by the first connecting conductor 4a1 and the second connecting conductor 4b1 and the joining by the adhesive layer 7 are simultaneously performed by, for example, a heat treatment of 150 (° C.) and 60 (min) while applying pressure. Note that the conditions of the pressurization and heat treatment are appropriately set in consideration of the configuration of the wiring substrate 5, the first element substrate 2a, and the third element substrate 3a.

  In this way, the first electronic element 2 is bonded to the upper surface 5ba side of the wiring board 5A, and the second electronic element 3 is bonded to the lower surface 5ab side of the wiring board 5A.

  The wiring substrate 5A, the first element substrate 2a, and the second element substrate 3a are bonded and bonded to each other so that the space S that accommodates the first functional body 2b and the second functional body 3b becomes the wiring substrate 5A. They are formed on the upper surface 5ba side and the lower surface 5ab side, respectively.

  Next, as shown in FIG. 11 (b), the second element substrate 3 a is cut along the cutting line L at the outer periphery of the four sides. That is, as shown in FIG. 1C, the outer periphery of the four sides of the second element substrate 3a is cut so that the outer periphery is located inside the outer periphery of the first element substrate 2a. As a result, the second element substrate 3a is smaller than the first element substrate 2a, and is disposed so as to be located inside the outer periphery of the first element substrate 2a. Further, the position of the cutting line L for cutting the second element substrate 3a is appropriately set depending on the arrangement configuration of the second wiring pattern 3c provided on the second element substrate 3a.

Further, before cutting the second element substrate 3a, at least one of the upper surface 2aa of the first element substrate 2a and the lower surface 3ab of the second element substrate 3a is shaved using a back grind wheel or the like. The element substrate thickness of the first element substrate 2a and the second element substrate 3a can be reduced. Thereby, the surface acoustic wave device 1 can be made thinner. Further, after cutting the second element substrate 3a, at least one of the upper surface 2aa of the first element substrate 2a and the lower surface 3ab of the second element substrate 3a may be shaved.

  After cutting the second element substrate 3a, a connection terminal pad 5d is formed below the conductor layer 5c2 of the wiring substrate 5A by using a known photolithography method or the like. The connection terminal pad 5d may not be formed.

  Next, as shown in FIG. 12A, the sealing resin layer 6 is provided so as to cover the lower surface 3ab and the side surface 3ac of the second element substrate 3a. The sealing resin layer 6 is, for example, a resin material such as an epoxy resin. For example, the sealing resin layer 6 is formed by processing an epoxy resin into a sheet shape and pressurizing the sheet-shaped epoxy resin on the second element substrate 3a. Further, the sealing resin layer 6 may be formed by applying or printing a photosensitive resin on the second element substrate 3a and using a well-known photolithography method or the like.

  And as shown in FIG.12 (b), the sealing resin layer 6 is for providing the internal through-conductor 6a in the outer peripheral part of the 2nd element substrate 3a using a laser processing method or a drill processing method. A through hole is provided. The through hole is provided through the sealing resin layer 6 at a position corresponding to the connection terminal pad 5d.

  Next, as shown in FIG. 13A, the internal through conductor 6a is provided in the through hole. The internal through conductor 6a is, for example, Ag paste and is provided in the through hole using a printing method or the like.

  And as shown in FIG.13 (b), the external terminal 12 is formed in the internal penetration conductor 6a using a well-known photolithographic method. Thereby, the surface acoustic wave device 1A can be obtained.

  Although the case where the first insulating layer 4a is provided on the wiring substrate 5A has been described above, the first insulating layer 4a may be provided on the first element substrate 2a. This will be described with reference to FIG.

  Up to FIG. 14B is manufactured through the manufacturing process of FIG. 8, as described above.

  Next, an insulating material is provided over the lower surface 2ab of the first element substrate 2a so as to cover the protective film 2e. The first insulating layer 4a is made of this insulating material. The insulating material (first insulating layer 4) is formed using, for example, a coating method, a printing method, a vapor deposition method, or a thin film forming method such as CVD.

  When an insulating material is provided on the first element substrate 2a on which the protective film 2e and the first element pad 2d are formed, the insulating material is patterned using a known photolithography method or the like, A patterned insulating material is formed on the first element substrate 2a. As shown in FIG. 14C, this patterning is performed so that the formation region of the first connection conductor 4a1 on the first element pad 2d is exposed, and an insulating material on the first element pad 2d is formed. An opening is formed. In this way, the first insulating layer 4a is formed with an opening on the first element pad 2d on the lower surface 2ab of the first element substrate 2a.

The first connection conductor 4a1 is, for example, Ag paste, and is formed on the first element pad 2d exposed from the first insulating layer 4a as shown in FIG. That is, the first connection conductor 4a1 is provided so as to fill the opening of the first insulating layer 4a on the first element pad 2d. The first connection conductor 4a1 is formed on the first element pad 2d using, for example, a printing method or a dispensing method.

  Here, an example of the formation of the first insulating layer 4a on the first element substrate 2a is shown below.

  The first insulating layer 4a is, for example, a photosensitive resin, and a photosensitive resin film made of a photosensitive resin on the first element substrate 2a on which the first element pads 2d and the protective film 2e are formed. Is provided. Next, the photosensitive resin film is irradiated with ultraviolet rays through a photomask using a known photolithography method or the like. Then, the photosensitive resin film is exposed so that the photosensitive resin is formed only in the region where the first insulating layer 4a is to be provided. Thus, the patterned photosensitive resin is provided on the first element substrate 2a. In this way, the first insulating layer 4a is provided on the first element substrate 2a.

  The first insulating layer 4a is formed by applying a liquid photosensitive resin such as a photosensitive polyimide resin on the element substrate 2a using a spin coat method or the like, and similarly, using a well-known photolithography method or the like. You may form using. The photosensitive resin is, for example, a urethane acrylate resin, a polyester acrylate resin, an epoxy acrylate resin, or the like.

  As shown in FIG. 14E, the adhesive layer 7 is formed on the first insulating layer 4a except for the region where the first connection conductor 4a1 is provided. The adhesive layer 7 is made of an insulating material such as an epoxy resin, for example, and is formed on the first insulating layer 4a by using, for example, a printing method or a photolithography method. The adhesive layer 7 may be provided on the first element substrate 2a. Further, the first insulating layer 4a can be made of a material having an adhesive function, whereby the adhesive layer 7 can be omitted.

  In this way, the first insulating layer 4a is provided on the first element substrate 2a through the manufacturing steps of FIGS. 14A to 14E. Similarly, the second insulating layer 4b can be provided on the second element substrate 3a by going through the manufacturing steps shown in FIGS. 14A to 14E.

  As shown in FIG. 15A, the first element substrate 2a is disposed to face the upper surface 5ba side of the wiring substrate 5A, and the second element substrate 3a is disposed to face the lower surface 5ab side of the wiring substrate 5A. Is done. A space S is formed by the first insulating layer 4a between the first element substrate 2a and the wiring substrate 5A. Further, a space S is formed by the second insulating layer 4b between the second element substrate 3a and the wiring substrate 5A.

  As shown in FIG. 15B, the first element substrate 2a and the wiring substrate 5A are bonded via the adhesive layer 7 on the first insulating layer 4a, and the second element substrate 3a and the wiring substrate are bonded. 5A is bonded via the adhesive layer 7 on the second insulating layer 4b. In this case, the conductor layer 5c4 of the wiring board 5A and the first connection conductor 4a1 of the first insulator 4a are joined to face each other, so that electrical connection is obtained. In addition, the conductor layer 5c2 of the wiring board 5A and the second connection conductor 4b1 of the second insulating layer 4b are bonded to face each other to obtain an electrical connection.

  That is, the first element pad 2d of the first element substrate 2a and the conductor layer 5c4 of the wiring substrate 5A are electrically joined via the first connection conductor 4a1. In addition, the second element pad 3d of the second element substrate 3a and the conductor layer 5c2 of the wiring substrate 5A are electrically joined through the second connection conductor 4b1.

  Thereafter, as described above, the surface acoustic wave device 1A can be manufactured through the manufacturing steps of FIGS.

  Here, a manufacturing method for manufacturing the surface acoustic wave device 1A using the element mother board 2A, the element mother board 3A, and the wiring mother board 5AA will be described.

  The element mother board 2A is provided with a plurality of first electronic elements 2 as shown in FIG. Therefore, the element mother board 2A is an aggregate in which a plurality of first electronic elements 2 are provided, and the plurality of first electronic elements 2 are provided so as to be arranged vertically and horizontally. FIG. 16 shows an enlarged cross-sectional view of one of the plurality of first electronic elements 2 on the element mother board 2A. In FIG. 16, the element mother board 2 </ b> A has a circular shape in plan view, but is not limited thereto, and may be a square shape, and the shape is appropriately set. The element mother board 2A has a diameter of, for example, 70 (mm) to 130 (mm) when the shape in plan view is circular.

  Further, as shown in FIG. 17, the element mother board 3 </ b> A is provided with a plurality of second electronic elements 3. Therefore, the element mother board 3A is an aggregate in which a plurality of second electronic elements 3 are provided, and the plurality of second electronic elements 3 are provided so as to be arranged vertically and horizontally. FIG. 17 shows an enlarged cross-sectional view of one of the plurality of second electronic elements 3 on the element mother board 3A. In FIG. 17, the element mother board 3 </ b> A has a circular shape in plan view, but is not limited thereto, and may be a square shape, and the shape is appropriately set. When the planar shape of the element mother board 3A is circular, the diameter is, for example, 70 (mm) to 130 (mm). FIG. 17 shows a state before the second element substrate 3a is cut along the cutting line L.

  As described above, the element mother substrate 2A is obtained by performing the manufacturing steps shown in FIGS. 8A to 8D for the first element substrate 2a and the second element substrate 3a. A plurality of first electronic elements 2 are provided, and a plurality of second electronic elements 3 are provided on the element mother board 3A. Thus, the element mother board 2A becomes an aggregate of the plurality of first electronic elements 2, and the element mother board 3A becomes an aggregate of the plurality of second electronic elements 3. Here, the first element substrate 2a has such a size that a plurality of first electronic elements 2 can be provided, and the second element substrate 3a has a plurality of second electronic elements. 3 can be provided.

  In addition, the wiring mother board 5AA is provided with a plurality of wiring boards 5A as shown in FIG. Therefore, the wiring mother board 6A is an assembly provided with a plurality of wiring boards 5A, and the plurality of wiring bases 5A are arranged in rows and columns. FIG. 18 shows an enlarged cross-sectional view of one of the plurality of wiring boards 5A of the wiring mother board 3A. In FIG. 18, the wiring motherboard 5AA has a square shape in plan view, but is not limited thereto, and may be a circular shape, and the shape is appropriately set. The wiring mother board 5AA has a side length of, for example, 100 (mm) to 150 (mm) when the shape in plan view is a square shape.

  As shown in FIG. 19A, the wiring mother board 5AA, the element mother board 2A, and the element mother board 3A are formed on the upper surface side of the wiring mother board 5AA as shown in FIG. The element mother board 2A is bonded, and the element mother board 3A is bonded to the lower surface side. That is, the element mother board 2A and the wiring mother board 5AA are joined via the adhesive layer 7 on the first insulating layer 4a, and the element mother board 3A and the wiring board 5A are on the second insulating layer 4b. Are bonded via the adhesive layer 7. In this case, the first element pad 2d of the first element substrate 2a and the first connection conductor 4a1 of the first insulator 4a are bonded to face each other to obtain an electric bond. In addition, the second element pad 3d of the second element substrate 3a and the second connection conductor 4b1 are bonded to face each other to obtain an electrical connection.

  And bonded substrate 1AA can obtain the aggregate | assembly with which several surface acoustic wave apparatuses 1A as shown in FIG.19 (b) were provided by passing through the manufacturing process of FIGS. 11-13. Moreover, in FIG.19 (b), sectional drawing which expanded three of several surface acoustic wave apparatuses 1A provided in bonding board | substrate 1AA is shown.

  Therefore, as shown in FIG. 19B, the bonded substrate 1A is an assembly provided with a plurality of surface acoustic wave devices 1A, and the plurality of surface acoustic wave devices 1 are arranged vertically and horizontally. Moreover, as shown in FIG.19 (b), the bonding substrate 1AA is provided with the cutting line 9 for separating the surface acoustic wave device 1 from the bonding substrate 1AA according to the shape of the surface acoustic wave device 1AA. It has been. That is, in FIG. 19, the bonding substrate 1A illustrates the case where the cutting line 9 is provided on the wiring mother board 5AA that is slightly larger than the element mother board 2A and the element mother board 3A.

  Moreover, bonding substrate 1AA may provide element mother board 2A and element mother board 3A which are slightly larger than wiring mother board 5AA, and may provide cutting line 9 on element mother board 2A or element mother board 3A. The cutting line 9 is appropriately provided on the element mother board 2A, the element mother board 3A, or the wiring mother board 5AA in consideration of the size of the element mother board 2A, the element mother board 3A, or the wiring mother board A5AA. Moreover, the cutting method of bonding board | substrate 1AA is not restricted to this.

  In the cutting method, for example, markers indicating the start and end points of a virtual cutting line are provided on the element mother board 2A, the element mother board 3A or the wiring mother board 5AA, and, for example, a dicing blade of a dicing apparatus is aligned with these markers. Etc. may be used to cut the bonded substrate 1AA. The thickness of the dicing blade is selected as appropriate. Moreover, the cutting method of bonding board | substrate 1AA can select suitably a well-known technique in consideration of the magnitude | size etc. of bonding board | substrate 1AA.

  And as shown in FIG.19 (b), bonding board | substrate 1AA is cut | disconnected along the cutting line 9 shown with the broken line, and the several surface acoustic wave apparatus 1 is each separated. That is, by cutting the bonded substrate 1AA, the individual surface acoustic wave devices 1A are separated from the bonded substrate 1AA. For example, as shown in FIG. 19B, three surface acoustic wave devices 1 </ b> A arranged side by side are cut into pieces from the bonded substrate 1 </ b> AA by cutting along the cutting line 9, and three surface acoustic waves are obtained. Device 1A can be obtained. In addition, cutting | disconnection of 1 AAA of bonding substrates is performed using a dicing apparatus etc., for example.

  When the surface acoustic wave device 1 is manufactured from the bonded substrate 1AA, a large amount of the surface acoustic wave device 1 can be manufactured at a time, so that the productivity of the surface acoustic wave device 1A is improved. That is, since the bonded substrate 1AA can manufacture a large number of individual surface acoustic wave devices 1A at a time, the productivity of the surface acoustic wave device 1 is improved as the productivity of the cutting process increases.

  The size of the element mother board 2A, element mother board 3A, and wiring mother board 5AA is the number of surface acoustic wave devices 1A obtained from the bonded substrate 1AA, that is, the number of surface acoustic wave devices 1A from the bonded substrate 1AA. Is set in consideration of each.

  In addition, since the bonded element mother board 2A, element mother board 3A, and wiring mother board 5AA are simultaneously cut in the bonded substrate 1AA, the surface acoustic wave device 1A has an outer peripheral side surface located in the same plane. become. Thus, the side surfaces (XZ plane and YZ plane) of the surface acoustic wave device 1A are located in the same plane. Therefore, since the surface acoustic wave device 1A can position the outer peripheral side surfaces in the same plane, the mounting accuracy is improved when the surface acoustic wave device 1A is mounted on the mounting substrate of the electronic device. Higher density mounting becomes possible.

Moreover, bonding substrate 1AA may be cut | disconnected from the element mother board | substrate 2A side, or may be cut | disconnected from the sealing resin layer 6 side, when cut | disconnecting. Moreover, you may cut | disconnect simultaneously from the element mother board | substrate 2A side and the sealing resin layer 6 side. The cutting method is appropriately set in consideration of the size of the bonded substrate 1AA and the like.

  The present invention is not particularly limited to the above-described embodiments, and various changes and improvements can be made within the scope of the present invention.

  The surface acoustic wave device is not limited to a SAW element. That is, the electronic element is not limited to a SAW element. The electronic element may not use an elastic wave. Moreover, you may utilize elastic waves other than SAW, such as a piezoelectric thin film resonator.

  Further, the wiring board is not limited to the one that mediates the electronic element and the mounting board. The wiring board may function as a mother board (main board, main board) of an electronic device such as a portable device, for example. The wiring board may be one on which a plurality of electronic elements are mounted.

  Further, the functional body may be formed of a conductor or may be formed of a semiconductor.

DESCRIPTION OF SYMBOLS 1, 1A Surface acoustic wave apparatus 2 1st electronic element 2a 1st element substrate 2b 1st functional body 2c 1st wiring pattern 2d 1st element pad 2e Protective film 3 2nd electronic element 3a 2nd Element substrate 3b Second functional body 3c Second wiring pattern 3d Second element pad 3e Protective film 4a First insulating layer 4a1 First connecting conductor 4b Second insulating layer 4b1 Second connecting conductor 5, 5A Wiring board 5c Connection conductor layer 6 Sealing resin layer 6a Internal through conductor 7 Adhesive layer 8 Circuit pattern 9 Cutting line 12 External terminal 20 Reception filter 20a, 20b IDT
20b reflector 30 transmission filter 30A resonator 30a IDT
30b Reflector S Space L Cutting line 1AA Bonding board 2A, 3A Element mother board 5A Wiring mother board

Claims (5)

A wiring board having a plurality of connecting conductor layers;
A first element substrate disposed on the upper surface side of the wiring substrate via the first insulating layer so as to form a space between the wiring substrate and a first element substrate provided on the first element substrate; 1 functional body, a first wiring pattern extending from the first functional body to the outer periphery of the first element substrate, and a first element pad electrically connected to the first wiring pattern A first electronic element comprising:
A second element located on the inner side of the outer periphery of the first element substrate and disposed so as to form a space between the wiring board and the lower surface side of the wiring board via a second insulating layer A substrate, a second functional body provided on the second element substrate, a second wiring pattern extending from the second functional body to the outer peripheral side of the second element substrate, and the second wiring A second electronic element comprising a second element pad electrically connected to the pattern;
A sealing resin layer provided on an outer peripheral portion of the second element substrate so as to cover a main surface and a side surface opposite to the main surface on which the second functional body of the second element substrate is provided; Prepared,
The first insulating layer is provided with a first connecting conductor connected to the first element pad, and the second insulating layer is connected to the second element pad. A connection conductor is provided, and the sealing resin layer is provided such that a plurality of internal through conductors, one end of which is electrically connected to the connection conductor layer, are located on an outer peripheral portion of the second element substrate. The first wiring pattern is electrically connected to the internal through conductor via the connection conductor layer provided at a position corresponding to the first connection conductor, and the second wiring pattern is The surface acoustic wave device is electrically connected to the internal through conductor through the connection conductor layer provided at a position corresponding to the second connection conductor.   2. The surface acoustic wave device according to claim 1, wherein outer peripheral side surfaces of the first element substrate, the first insulating layer, the second insulating layer, and the wiring substrate are located on the same plane.   3. The surface acoustic wave device according to claim 1, wherein the first electronic element and the second electronic element have a filter characteristic that outputs signals having different frequency components. 4. .   The surface acoustic wave device according to claim 3, wherein the first electronic element is a reception filter, and the second electronic element is a transmission filter. 5. The wiring board according to claim 1, wherein a ground potential pattern is provided on a main surface facing the first functional body or a main surface facing the second functional body. The surface acoustic wave device according to any one of the above.

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