JP2014229963A - Terminator - Google Patents

Abstract

PROBLEM TO BE SOLVED: A terminator is widely used in a microwave circuit. However, as the input power increases, the line conductor becomes larger and the impedance matching band becomes narrower. In addition, the microwave is converted into heat. There was a problem that the distribution could be made and the withstand power was lowered. A circular resistor and a conductive via connected to the resistor, a conductor pattern connected to the conductive via, a conductive via connected to the conductor pattern and a microstrip line or a triplate line, And the terminator is configured. [Selection] Figure 1

Description

  The present invention relates to a terminator for absorbing a high frequency signal propagating in a transmission line, which is used in a microwave or millimeter wave high frequency circuit.

  A microwave terminator or a millimeter wave terminator (hereinafter abbreviated as a terminator) absorbs a microwave band high-frequency signal propagating through a transmission line. Terminators are widely used in high-frequency circuits including microwave circuits.

  On the other hand, by connecting the line conductor and ground conductor of the microstrip line with a resistor wider than the line conductor and gradually increasing the width of the resistor in accordance with the width of the line conductor, impedance is reduced. A terminator that eliminates matching is known (see, for example, Patent Document 1).

JP 2005-260454 A

  However, in the conventional terminator as shown in Patent Document 1, a resistance film having a width wider than that of the line conductor is connected to the end of the microstrip line. For this reason, there is a problem in that the line conductor for matching is increased with an increase in input power, and the matching band is narrowed.

  Further, by connecting a line conductor and a conductor wider than the line conductor and connecting the wide conductor to the resistor, the bandwidth of the terminator can be increased. However, in this case, the distance from the portion where the line conductor spreads to the resistance film cannot be made the same, and the heat generation distribution in the resistor cannot be made uniform. For this reason, the power durability depends on the portion where heat generation is most concentrated.

  SUMMARY OF THE INVENTION The present invention has been made to solve the above-described problems, and an object of the present invention is to widen a microwave band in which impedance matching can be performed and to achieve high power resistance by obtaining an even heat distribution.

  A terminator according to the present invention is formed of a plurality of layers in which a line conductor, a conductor pattern, and a ground conductor pattern are joined, and each layer is connected by a conductor via, and a resistor formed on the multilayer substrate. The conductor pattern forms a connection conductor pattern connected to the line conductor by the conductor via, the connection conductor pattern is connected to the resistor by the conductor via, and the ground conductor pattern is , Connected to the resistor.

  ADVANTAGE OF THE INVENTION According to this invention, while matching the impedance of a termination | terminus device to a wide band, the heat_generation | fever distribution by the microwave input into the termination | terminus device can be equalized.

It is a side view which shows the structure of the termination | terminus device by Embodiment 1. FIG. FIG. 3 is a plan view of each layer showing the configuration of the terminator according to the first embodiment. It is a figure which shows the simulation result of the small signal characteristic for demonstrating the characteristic of the termination | terminus device by Embodiment 1. FIG.

Embodiment 1 FIG.
1 is a side view showing a configuration of a terminator according to Embodiment 1 of the present invention. 2 is a plan view showing the configuration of the terminator according to the first embodiment. FIG. 2A is a top view showing the wiring pattern of the first layer of the substrate (the upper surface of the first layer of the substrate from the upper side of FIG. 1). FIGS. 2A and 2B are top perspective views showing a pattern of the second layer of the substrate (views of the top surface of the second layer of the substrate from above in FIG. 1). FIG. 2C is a top perspective view showing a pattern of the third layer of the substrate (a view seen through the upper surface of the third layer of the substrate from the upper side of FIG. 1). FIG. 2D is a top perspective view showing a pattern of the fourth layer of the substrate (a view seen through the upper surface of the fourth layer of the substrate from the upper side in FIG. 1).

  1 and 2, the terminator 500 according to the first embodiment is configured as a stacked substrate from the first layer to the fourth layer of the substrate. The first substrate layer 10, the second substrate layer 20, the third substrate layer 30 and the fourth substrate layer 40 constitute a multilayer substrate on which electronic circuits are formed. The first substrate layer 10, the second substrate layer 20, the third substrate layer 30 and the fourth layer 40 are arranged adjacent to the multilayer substrate layer having any number of layers while maintaining this order. On the first layer of the substrate, a microstrip line 2 is arranged as an electric power input side line. The microstrip line 2 on the first layer 10 of the substrate is connected to the circular conductor pattern 3 on the third layer 30 of the substrate by a conductive via (VIA) 1. Here, the conductor pattern of the second substrate layer 20 is the ground conductor pattern 4 of the microstrip line 2 of the first substrate layer 10. In addition, the via 1 is disposed in a portion where the conductor portion of the ground conductor pattern 4 is circularly penetrated, and is not in electrical contact with the ground conductor pattern 4.

  The third layer 30 of the substrate is composed of the circular conductor pattern 3. A conductor via 1 connected to the microstrip line 2 is connected to the upper surface of the circular conductor pattern 3. Further, the lower surface (back surface) of the circular conductor pattern 3 is on a circle in which the conductor via 5 takes a certain distance from the conductor via 1 on the upper surface (from the portion along the outer periphery of the circular conductor pattern 3 and the outer periphery). Are also formed in the inner part). The conductor via 5 connected to the circular conductor pattern 3 is connected to the resistor 6 in the fourth layer 40 of the substrate.

  A ground conductor pattern 100 is formed around the resistor 6 in the fourth layer 40 of the substrate, and is connected to the ground conductor pattern 4 in the second layer of the substrate and has the same potential. The ground conductor pattern 4 and the ground conductor pattern 100 are connected by a via (VIA) (not shown).

  Here, the microstrip line 2 on the first layer 10 of the substrate as the input side line performs the same function even when it is replaced with a strip line. In addition, a triplate line and a waveguide perform the same function. The microstrip line on the first layer 10 of the substrate can be replaced if it is a line through which other power can propagate.

  FIG. 3 is a simulation result of small signal characteristics performed to confirm the above effect. 3 (a) and 3 (b) show simulation results for a conventional structure in which power is supplied from one microstrip line to one side of a rectangular resistor, and FIGS. 3 (c) and 3 (d) show the structure shown in FIG. The simulation results for are shown respectively. A finite element electromagnetic field simulation was used for the simulation.

  The graphs (a) and (c) shown in FIG. 3 are Smith charts showing characteristics of frequencies from 8 GHz to 12 GHz. With respect to the center of the circle of 50Ω, (c) turns inward with respect to (a) and is matched. Further, the horizontal axis of the graph indicates the frequency, and the vertical axis indicates the reflection loss. When viewed at a reflection loss of 15 dB or less, FIG. 3 (d) confirms that good reflection is obtained in a wide band over a wide frequency with respect to (b).

  The terminator according to the first embodiment is characterized in that a resistor is arranged in a layer different from the input-side line using the structure of the multilayer substrate, and the multilayer substrate may be formed of a resin. For example, LTCC (Low Temperature Co-fired Ceramics) or HTCC (High Temperature Co-fired Ceramics) may be used depending on the substrate material that can form a multilayer. Further, among the first layer, the second layer, the third layer, and the fourth layer of the substrate, a plurality of layers may be made of different materials. As a result, for example, the first substrate, the second substrate, and the third substrate can be configured with a resin substrate with a lower material price instead of a ceramic substrate with a higher material price. Compared to the above, the high-frequency power terminator can be configured at a lower cost.

  As described above, the terminator according to the first embodiment is formed of a plurality of layers in which a line conductor (microstrip line 2), a conductor pattern, and a ground conductor pattern (ground conductor pattern 4) are joined. A multi-layer substrate each connected by a conductor via (5) and a resistor (resistor pattern 6) formed on the multi-layer substrate, wherein the conductor pattern is connected to the line conductor by the conductor via A conductor pattern (circular conductor pattern 3) is formed, the connection conductor pattern is connected to the resistor by the conductor via, and the ground conductor pattern is connected to the resistor.

  Further, the connection conductor pattern (circular conductor pattern 3) is sandwiched between the first ground conductor pattern (4) and the second ground conductor pattern (100) respectively disposed in the upper and lower layers. The first ground conductor pattern (4) constitutes a microstrip line (2) or a triplate line together with the line conductor, and surrounds a conductor via connecting the line conductor and the connection conductor pattern in a non-contact manner. The second ground conductor pattern (100) is formed on the same surface as the resistor (resistor pattern 6). The connection conductor pattern (circular conductor pattern 3) is circular, and the resistor (resistor pattern 6) is circular. The line conductor (microstrip line 2) has a matching circuit.

  As described above, the high frequency power terminator 500 according to the first embodiment connects the plurality of conductor vias to the four layers of the substrate on which the resistor is formed, thereby reducing the distance from the input main line to the resistor that converts heat. By making it completely uniform, a broadband matching and uniform heat distribution can be obtained.

  1 conductor via, 2 microstrip line, 3 circular conductor pattern, 4 ground conductor pattern, 5 conductor via, 6 resistor pattern, 10 substrate first layer, 20 substrate second layer, 30 substrate third layer, 40 substrate four layers Eye, 100 Ground conductor pattern, 500 High-frequency power amplifier.

Claims (5)

A multi-layer board formed by a plurality of layers joined with a line conductor, a conductor pattern and a ground conductor pattern, and each layer connected by a conductor via,
A resistor formed on the multilayer substrate;
With
The conductor pattern forms a connection conductor pattern connected to the line conductor by the conductor via,
The connection conductor pattern is connected to the resistor by the conductor via,
The terminator characterized in that the ground conductor pattern is connected to the resistor.   2. The terminator according to claim 1, wherein the connection conductor pattern is sandwiched between first and second ground conductor patterns respectively disposed on upper and lower layers. The first ground conductor pattern constitutes a microstrip line or a triplate line together with the line conductor, and is disposed so as to surround a conductor via connecting the line conductor and the connection conductor pattern in a non-contact manner.
The terminator according to claim 2, wherein the second ground conductor pattern is formed on the same surface as the resistor.   The terminator according to any one of claims 1 to 3, wherein the connection conductor pattern has a circular shape, and the resistor has a circular shape.   The terminator according to any one of claims 1 to 4, wherein the line conductor includes a matching circuit.

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