JP2014118605A - Method of producing ruthenium-containing thin film and ruthenium-containing thin film - Google Patents

Abstract

A method for efficiently producing a ruthenium-containing thin film at a low temperature of 500 ° C. or lower is provided.
(2,4-Dimethylpentadienyl) (ethylcyclopentadienyl) ruthenium and / or bis (ethylcyclopentadienyl) ruthenium and bis (2,4-dimethylpentadienyl) ruthenium, η ⁴ -1,3-cyclohexadiene) (η ⁶ -ethylbenzene) ruthenium, (η ⁶ -ethylbenzene) (η ⁴ -5-ethyl-1,3-cyclohexadiene) ruthenium and carbonylbis (2-methyl-1, A ruthenium-containing thin film is formed from a ruthenium complex mixture containing one or more ruthenium complexes selected from the group consisting of 3-pentadiene) ruthenium using a reducing gas.
[Selection figure] None

Description

  The present invention relates to a method for producing a ruthenium-containing thin film using a specific ruthenium complex mixture and a reducing gas, and a ruthenium-containing thin film obtained by the production method.

In order to secure the accumulated charge capacity associated with the miniaturization of DRAM capacitors, research on increasing the dielectric constant of capacitor insulating films and metallization of capacitor electrodes is actively conducted. In order to secure the accumulated charge capacity, ZrO ₂ , SrTiO ₃ , etc. are candidates for the insulating film, Ru, RuO ₂ , etc. are candidates for the electrode, and TiN, TaN etc. are candidates for the barrier metal film. In addition, a high-aspect-ratio cylinder type is the mainstream capacitor, and all of the above films need to have excellent step coverage.

  Chemical vapor deposition methods (CVD methods) and atomic layer deposition methods (ALD methods), which have excellent step coverage, are used as film manufacturing methods, and many processes using organometallic complexes and oxygen have been proposed. ing.

  Underneath the Ru lower electrode of the DRAM capacitor structure, there is a TiN film as a barrier metal. In the case of CVD or ALD using oxygen, the surface of the TiN film is oxidized during the Ru film production, and the contact between the electrode and the barrier metal A problem arises that the resistance value deteriorates and the capacitor performance deteriorates. Therefore, it is necessary to manufacture the Ru lower electrode using a reducing gas.

  As a raw material for producing a Ru electrode of a capacitor, it is liquid at room temperature, and (2,4-dimethylpentadienyl) (ethylcyclopentadienyl) ruthenium (from the viewpoint of handleability, storage stability, and vapor pressure) DER) is excellent (Patent Document 1). Further, ruthenium complex mixtures have been reported as raw materials that can efficiently produce Ru films at low temperatures (Patent Documents 2 and 3). DER and the ruthenium complex mixture described above are excellent raw materials from the viewpoint of step coverage, and are excellent materials suitable for the Ru upper electrode manufacturing process using an oxidizing gas such as oxygen or ozone as a reaction gas. On the other hand, there is no description about a specific method for producing a Ru film using a reducing gas such as ammonia or hydrogen, and it is unclear whether it can be applied as a raw material for producing a Ru lower electrode.

JP 2003-342286 A JP 2011-153124 A JP 2012-111696 A

  In order to produce a ruthenium thin film using a reducing gas, it is essential to use high temperature or plasma. When the substrate temperature at the time of thin film production is high, troubles such as mutual diffusion and peeling between the layers may occur, and therefore it is required to produce the thin film at the lowest possible temperature. In addition, when plasma is used, the substrate is damaged, and it is difficult to produce a thin film uniformly on a substrate having a high aspect ratio. Therefore, the practical range of the thin film production method is narrow.

  An object of the present invention is to provide a method capable of efficiently producing a ruthenium-containing thin film by using a specific ruthenium complex mixture without using plasma at a low temperature of 500 ° C. or lower using a reducing gas. There is to do.

  As a result of intensive studies to solve the above-mentioned problems, the present inventors have used a specific ruthenium complex mixture, so that a ruthenium-containing thin film such as ruthenium can be obtained without using plasma even at a low temperature of 500 ° C. or lower. The inventors have found that this is an excellent production method that can be efficiently produced using a reducing gas, and have completed the present invention.

  That is, the present invention relates to the following (1) to (7).

  (1) General formula [1] and / or General formula [2]

(In the formula, R ^{1 to} R ⁵ are the same or different and each represents hydrogen or an alkyl group having 1 to 6 carbon atoms, provided that when R ^{1 to} R ⁵ are all hydrogen, and R ¹ and R ² are both hydrogen. And any one of R ^{3 to} R ⁵ is hydrogen and the rest is a methyl group.)

(In the formula, R ^{6 to} R ⁹ represent hydrogen or an alkyl group having 1 to 6 carbon atoms. However, when R ^{6 to} R ⁹ are all hydrogen, and R ⁶ and R ⁸ are both hydrogen and R ⁷ and Except when both R ⁹ are methyl groups.)
A ruthenium complex represented by
Bis (2,4-dimethylpentadienyl) ruthenium, (η ⁴ -1,3-cyclohexadiene) (η ⁶ -ethylbenzene) ruthenium, (η ⁶ -ethylbenzene) (η ⁴ -5-ethyl-1,3- A ruthenium complex mixture containing one or more ruthenium complexes selected from the group consisting of cyclohexadiene) ruthenium and carbonylbis (2-methyl-1,3-pentadiene) ruthenium is made into a ruthenium-containing thin film using a reducing gas. A method for producing a ruthenium-containing thin film.

(2) In the above general formula [1], R ¹ and R ³ are both hydrogen, R ² is an ethyl group, and R ⁴ and R ⁵ are both methyl groups. The manufacturing method as described.

(3) In the general formula [2], R ⁶ and R ⁸ are both hydrogen, and R ⁷ and R ⁹ are both ethyl groups.

  (4) The manufacturing method according to any one of (1) to (3) above, wherein chemical vapor deposition or atomic layer deposition is used.

  (5) The production method according to any one of the above (1) to (4), wherein ammonia is used as the reducing gas.

  (6) A ruthenium-containing thin film produced by the method according to any one of (1) to (5) above.

  (7) A semiconductor device using the ruthenium-containing thin film described in (6) above for an electrode portion and / or a wiring portion.

  The present invention is described in further detail below.

In the ruthenium complex represented by the general formula [1], R ^{1 to} R ⁵ are hydrogen or an alkyl group having 1 to 6 carbon atoms. However, when all of R ^{1 to} R ⁵ are hydrogen, and when both R ¹ and R ² are hydrogen, and any one of R ^{3 to} R ⁵ is hydrogen and the remaining is a methyl group, it is solid at room temperature. Excluded.

^R 1 to R in the general formula [1] ⁵ represents hydrogen or an alkyl group having 1 to 6 carbon atoms. The alkyl group having 1 to 6 carbon atoms may be linear, branched, or cyclic. For example, methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, isobutyl group, sec -Butyl group, tert-butyl group, pentyl (amyl) group, isopentyl group, neopentyl group, tert-pentyl group, 1-methylbutyl group, 2-methylbutyl group, 1,2-dimethylpropyl group, hexyl group, isohexyl group, 1-methylpentyl group, 2-methylpentyl group, 3-methylpentyl group, 1,1-dimethylbutyl group, 2,2-dimethylbutyl group, 1,3-dimethylbutyl group, 2,3-dimethylbutyl group, 3,3-dimethylbutyl group, 1-ethylbutyl group, 2-ethylbutyl group, 1,1,2-trimethylpropyl group, 1,2,2-trimethyl Lopyl group, 1-ethyl-1-methylpropyl group, 1-ethyl-2-methylpropyl group, cyclopropyl group, cyclobutyl group, cyclopentyl group, cyclohexyl group, cyclopropylmethyl group, cyclopropylethyl group, and cyclobutyl A methyl group etc. can be illustrated. Of these, hydrogen, methyl group, ethyl group and the like are preferable.

Examples of the ruthenium complex represented by the general formula [1] include (2,4-dimethylpentadienyl) (ethylcyclopentadienyl) ruthenium (DER), (2,4-diethylpentadienyl) (ethylcyclohexane). Pentadienyl) ruthenium, etc., of which, from the viewpoint of vapor pressure, production cost, etc., R ¹ and R ³ are both hydrogen, R ² is an ethyl group, and R ⁴ and R ⁵ are both methyl groups Is preferred.

In the ruthenium complex represented by the general formula [2], R ^{6 to} R ⁹ represent hydrogen or an alkyl group having 1 to 6 carbon atoms. However, when all of R ^{6 to} R ⁹ are hydrogen, and when R ⁶ and R ⁸ are both hydrogen and R ⁷ and R ⁹ are both methyl groups, they are excluded because they are solid at room temperature.

R < ⁶ > -R < ⁹ > of General formula [2] shows hydrogen or a C1-C6 alkyl group. The alkyl group having 1 to 6 carbon atoms may be linear, branched, or cyclic. For example, methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, isobutyl group, sec -Butyl group, tert-butyl group, pentyl (amyl) group, isopentyl group, neopentyl group, tert-pentyl group, 1-methylbutyl group, 2-methylbutyl group, 1,2-dimethylpropyl group, hexyl group, isohexyl group, 1-methylpentyl group, 2-methylpentyl group, 3-methylpentyl group, 1,1-dimethylbutyl group, 2,2-dimethylbutyl group, 1,3-dimethylbutyl group, 2,3-dimethylbutyl group, 3,3-dimethylbutyl group, 1-ethylbutyl group, 2-ethylbutyl group, 1,1,2-trimethylpropyl group, 1,2,2-trimethyl Lopyl group, 1-ethyl-1-methylpropyl group, 1-ethyl-2-methylpropyl group, cyclopropyl group, cyclobutyl group, cyclopentyl group, cyclohexyl group, cyclopropylmethyl group, cyclopropylethyl group, and cyclobutyl A methyl group etc. can be illustrated. Of these, hydrogen, methyl group, ethyl group and the like are preferable.

Examples of the ruthenium complex represented by the general formula [2] include bis (ethylcyclopentadienyl) ruthenium, (ethylcyclopentadienyl) (methylcyclopentadienyl) ruthenium, etc. Among them, vapor pressure, From the viewpoint of production cost and the like, bis (ethylcyclopentadienyl) ruthenium in which R ⁶ and R ⁸ are both hydrogen and R ⁷ and R ⁹ are both ethyl groups is preferable.

The complex mixture in the present invention has the general formula [1] and / or the general formula [2].
A ruthenium complex represented by
Bis (2,4-dimethylpentadienyl) ruthenium, (η ⁴ -1,3-cyclohexadiene) (η ⁶ -ethylbenzene) ruthenium, (η ⁶ -ethylbenzene) (η ⁴ -5-ethyl-1,3- It is a ruthenium complex mixture containing one or more ruthenium complexes selected from the group consisting of cyclohexadiene) ruthenium and carbonylbis (2-methyl-1,3-pentadiene) ruthenium.

  The ruthenium complex mixture may contain a solvent, a stabilizer and the like.

  The ruthenium complex mixture described above may be in a uniform solution state, or the ruthenium complex represented by the general formula [1] and / or the general formula (2) and the ruthenium complex may be precipitated and mixed as a solid. When solids are mixed, they can be used by heating so that a uniform solution is obtained at the time of use. Or you may dilute with a suitable solvent and you may make it a uniform solution.

  The content of the ruthenium complex described above is the ruthenium complex represented by the general formula [1] and / or the general formula (2) from the viewpoint of the amount of nucleation in the initial stage of film formation at low temperature and the thermal decomposition of the ruthenium complex. It is preferable that it is 0.1 to 100 weight% with respect to. Further, from the viewpoint of handleability, among the ruthenium complexes described above, those that are solid at room temperature contain an amount that can be dissolved in the ruthenium complex represented by the general formula [1] and / or the general formula (2). It is preferable. For example, when the aforementioned ruthenium complex is bis (2,4-dimethylpentadienyl) ruthenium, 0.1 to 15 for the ruthenium complex represented by the general formula [1] and / or the general formula (2). It is preferable to make it contain by weight%.

  There is no particular limitation on the manufacturing method of the above-described ruthenium complex mixture, and the ruthenium complex represented by the general formula [1] and / or the general formula (2) and the above-described ruthenium complex are mixed so as to obtain a target composition. That's fine. A suitable solvent may be allowed to coexist at the time of mixing, whereby the above-mentioned ruthenium complex mixture can be produced as a uniform solution without heating, and is represented by the general formula [1] and / or the general formula (2). The thermal decomposition of the ruthenium complex and the ruthenium complex described above can be suppressed. Examples of the solvent include alcohols such as methanol, ethanol, propanol and isopropanol, esters such as ethyl acetate, butyl acetate and isoamyl acetate, glycols such as ethylene glycol monoethyl ether, ethylene glycol monomethyl ether and ethylene glycol monobutyl ether. Ethers, diethyl ether, tert-butyl methyl ether, ethers such as glyme, diglyme, triglyme, tetrahydrofuran, tert-butyl methyl ketone, isobutyl methyl ketone, ethyl butyl ketone, dipropyl ketone, diisobutyl ketone, methyl amyl ketone, cyclohexanone , Ketones such as acetone, hexane, cyclohexane, ethylcyclohexane, heptane, octane, benzene, toluene Emissions can be exemplified hydrocarbons such as xylene.

  The method for producing a ruthenium-containing thin film of the present invention is a method for producing a ruthenium-containing thin film using a reducing gas from the ruthenium complex mixture thus obtained. As a method for producing the ruthenium-containing thin film of the present invention, the above-mentioned ruthenium complex mixture is vaporized and decomposed on the substrate. A person skilled in the art produces a metal-containing thin film as a method for vaporizing and decomposing on the substrate. The usual technical means used for this can be mentioned. Specific examples include CVD, ALD, spin coating, dip coating, and spraying. Examples of the CVD method include a thermal CVD method, a photo CVD method, and a plasma CVD method. Examples of the ALD method include a thermal ALD method, a photo ALD method, and a plasma ALD method. The ruthenium-containing thin film of the present invention can be produced only by heat, and light, plasma, or the like may be used in combination. When a thin film is uniformly produced on the surface of a three-dimensional substrate, a thermal CVD method and a thermal ALD method are preferable, and a thermal ALD method is particularly preferable.

  When a ruthenium-containing thin film is produced on a substrate by the above-described ruthenium complex mixture as a raw material by CVD or ALD, the ruthenium complex mixture is gasified and supplied onto the substrate. Examples of a method for supplying raw materials to the CVD and ALD reaction chambers include bubbling and a liquid vaporization supply system, and are not particularly limited. However, bubbling in solution is difficult to keep the composition of the raw material constant when used for a long period due to the difference in vapor pressure from the ruthenium complex, ruthenium complex or solvent contained in the ruthenium complex mixture. . Therefore, vaporization and supply by a liquid vaporization supply system are preferable.

  Examples of the reducing gas for producing the ruthenium-containing thin film include ammonia, hydrogen, monosilane, hydrazine, and the like. Ammonia is preferred because the deposition rate is high when producing a ruthenium-containing thin film. The flow rate of the reducing gas is appropriately adjusted according to the reactivity of the raw material and the capacity of the reaction chamber. For example, when a ruthenium complex mixture is used as a raw material and the reaction chamber has a capacity of 1 to 10 L, the flow rate of the reducing gas is preferably 1 to 5000 sccm. Note that sccm is a unit representing a gas flow rate, and 1 sccm represents that the gas is moving at a rate of 2.68 mmol / h when converted to an ideal gas.

  As a carrier gas and a dilution gas for producing a ruthenium-containing thin film, a rare gas or nitrogen is preferable, and nitrogen, helium, neon, and argon are particularly preferable for economical reasons. The flow rates of the carrier gas and the dilution gas are appropriately adjusted according to the reactivity of the raw materials and the capacity of the reaction chamber. For example, when a ruthenium complex mixture is used as a raw material and the reaction chamber has a capacity of 1 to 10 L, the carrier gas flow rate is preferably 1 to 10,000 sccm.

  The temperature at which the ruthenium-containing thin film is produced using the reducing gas is not particularly limited, and when ammonia is used as the reducing gas, it is preferably 400 to 1000 ° C., and 450 to 700 in terms of good film formation rate. ° C is particularly preferred. Moreover, a ruthenium containing thin film can be manufactured in the temperature range of 400 degrees C or less by using light and plasma together.

  As a ruthenium-containing thin film obtained by the production method of the present invention, for example, when a ruthenium complex mixture is used alone, a Ru film, a RuN film or the like is obtained, and when used in combination with other metal raw materials, A ruthenium-containing composite film is obtained. Moreover, when using in combination with another metal raw material, each raw material may be supplied separately or after mixing.

  By using the ruthenium-containing thin film of the present invention as a constituent member, a highly functional semiconductor device can be manufactured. Examples of semiconductor devices include memories such as DRAM, FeRAM, and ReRAM, and transistors such as MOSFETs. Examples of these constituent members include capacitor electrodes, gate electrodes, copper wiring liners, and the like.

  According to the present invention, by using a specific ruthenium complex mixture, a ruthenium-containing thin film can be efficiently produced without using plasma at a low temperature of 500 ° C. or lower using a reducing gas.

It is a figure which shows the CVD apparatus used in Examples 1-10.

  Specific embodiments to which the present invention is applied will be described in detail with reference to examples. In addition, this invention is not limited to a following example.

Example 1
Using a ruthenium complex mixture containing DER and 5 wt% bis (2,4-dimethylpentadienyl) ruthenium as a raw material, using ammonia as a reducing gas, a ruthenium-containing thin film is subjected to a thermal CVD method. Manufactured by. The outline of the apparatus used for the thin film production is shown in FIG. The film forming conditions are as follows. Raw material container temperature: 60 ° C., total pressure in raw material container: 13.3 kPa, carrier gas flow rate: 30 sccm, dilution gas flow rate: 70 sccm, ammonia gas flow rate: 100 sccm, substrate: Si wafer with thermal oxide film, substrate temperature: 500 ° C. Deposition time: 1 hour. Argon was used as the carrier gas and diluent gas. When the produced thin film was confirmed by fluorescent X-ray analysis, a characteristic X-ray based on ruthenium was detected, and thus a ruthenium-containing thin film was obtained.

(Example 2)
Example 1 Using the apparatus of FIG. 1, using DER and a ruthenium complex mixture containing 5% by weight of (η ⁴ -1,3-cyclohexadiene) (η ⁶ -ethylbenzene) ruthenium with respect to DER as a raw material, Example A ruthenium-containing thin film was produced by the thermal CVD method under the same conditions as in 1. When the produced thin film was confirmed by fluorescent X-ray analysis, a characteristic X-ray based on ruthenium was detected, and thus a ruthenium-containing thin film was obtained.

(Example 3)
Using the apparatus shown in FIG. 1 using DER and a ruthenium complex mixture containing 5% by weight of (η ⁶ -ethylbenzene) (η ⁴ -5-ethyl-1,3-cyclohexadiene) ruthenium relative to DER as a raw material. Thus, a ruthenium-containing thin film was produced by the thermal CVD method under the same conditions as in Example 1. When the produced thin film was confirmed by fluorescent X-ray analysis, a characteristic X-ray based on ruthenium was detected, and thus a ruthenium-containing thin film was obtained.

Example 4
Using a ruthenium complex mixture containing 5% by weight of carbonylbis (2-methyl-1,3-pentadiene) ruthenium with respect to DER and DER as raw materials, using the apparatus of FIG. Under the conditions, a ruthenium-containing thin film was produced by a thermal CVD method. When the produced thin film was confirmed by fluorescent X-ray analysis, a characteristic X-ray based on ruthenium was detected, and thus a ruthenium-containing thin film was obtained.

(Example 5)
As raw materials, 3% by weight of bis (2,4-dimethylpentadienyl) ruthenium with respect to DER and DER and 3% by weight of carbonylbis (2-methyl-1,3-pentadiene) ruthenium with respect to DER Using the ruthenium complex mixture, a ruthenium-containing thin film was produced by a thermal CVD method under the same conditions as in Example 1 using the apparatus of FIG. When the produced thin film was confirmed by fluorescent X-ray analysis, a characteristic X-ray based on ruthenium was detected, and thus a ruthenium-containing thin film was obtained.

(Example 6)
Example 1 using the apparatus of FIG. 1, using a ruthenium complex mixture containing 100% by weight of DER with respect to bis (ethylcyclopentadienyl) ruthenium and bis (ethylcyclopentadienyl) ruthenium as raw materials, Example 1 A ruthenium-containing thin film was produced by the thermal CVD method under the same conditions. When the produced thin film was confirmed by fluorescent X-ray analysis, a characteristic X-ray based on ruthenium was detected, and thus a ruthenium-containing thin film was obtained.

(Example 7)
5% by weight of (1,3-dimethylcyclopentadienyl) (2,4-dimethylpentadienyl) ruthenium with respect to bis (ethylcyclopentadienyl) ruthenium and bis (ethylcyclopentadienyl) ruthenium as raw materials A ruthenium-containing thin film was produced by the thermal CVD method under the same conditions as in Example 1 using the apparatus shown in FIG. When the produced thin film was confirmed by fluorescent X-ray analysis, a characteristic X-ray based on ruthenium was detected, and thus a ruthenium-containing thin film was obtained.

(Example 8)
Ruthenium containing 5% by weight of (2,4-dimethylpentadienyl) (methylcyclopentadienyl) ruthenium relative to bis (ethylcyclopentadienyl) ruthenium and bis (ethylcyclopentadienyl) ruthenium as raw materials Using the complex mixture, a ruthenium-containing thin film was produced by a thermal CVD method under the same conditions as in Example 1 using the apparatus of FIG. When the produced thin film was confirmed by fluorescent X-ray analysis, a characteristic X-ray based on ruthenium was detected, and thus a ruthenium-containing thin film was obtained.

Example 9
Using a ruthenium complex mixture containing 5% by weight of bis (2,4-dimethylpentadienyl) ruthenium with respect to bis (ethylcyclopentadienyl) ruthenium and bis (ethylcyclopentadienyl) ruthenium as raw materials, Using the apparatus shown in FIG. 1, a ruthenium-containing thin film was produced by a thermal CVD method under the same conditions as in Example 1. When the produced thin film was confirmed by fluorescent X-ray analysis, a characteristic X-ray based on ruthenium was detected, and thus a ruthenium-containing thin film was obtained.

(Example 10)
50% by weight DER for bis (ethylcyclopentadienyl) ruthenium and bis (ethylcyclopentadienyl) ruthenium as raw materials and 5% by weight bis (2, for bis (ethylcyclopentadienyl) ruthenium Using a ruthenium complex mixture containing 4-dimethylpentadienyl) ruthenium, a ruthenium-containing thin film was produced by a thermal CVD method under the same conditions as in Example 1 using the apparatus of FIG. When the produced thin film was confirmed by fluorescent X-ray analysis, a characteristic X-ray based on ruthenium was detected, and thus a ruthenium-containing thin film was obtained.

  By using the method for producing a ruthenium-containing thin film using the specific ruthenium complex mixture of the present invention, a ruthenium-containing thin film is produced by a thermal CVD method using a reducing gas without using plasma at a low temperature of 500 ° C. or lower. Is possible.

  Although the present invention has been described in detail and with reference to specific embodiments, it will be apparent to those skilled in the art that various changes and modifications can be made without departing from the spirit and scope of the invention.

DESCRIPTION OF SYMBOLS 1 Raw material container 2 Constant temperature bath 3 Reaction chamber 4 Substrate 5 Reducing gas 6 Dilution gas 7 Carrier gas 8 Mass flow controller 9 Mass flow controller 10 Mass flow controller 11 Oil rotary pump 12 Exhaust

Claims (7)

General formula [1] and / or general formula [2]

(In the formula, R ^{1 to} R ⁵ are the same or different and each represents hydrogen or an alkyl group having 1 to 6 carbon atoms, provided that when R ^{1 to} R ⁵ are all hydrogen, and R ¹ and R ² are both hydrogen. And any one of R ^{3 to} R ⁵ is hydrogen and the rest is a methyl group.)

(In the formula, R ^{6 to} R ⁹ represent hydrogen or an alkyl group having 1 to 6 carbon atoms. However, when R ^{6 to} R ⁹ are all hydrogen, and R ⁶ and R ⁸ are both hydrogen and R ⁷ and Except when both R ⁹ are methyl groups.)
A ruthenium complex represented by
Bis (2,4-dimethylpentadienyl) ruthenium, (η ⁴ -1,3-cyclohexadiene) (η ⁶ -ethylbenzene) ruthenium, (η ⁶ -ethylbenzene) (η ⁴ -5-ethyl-1,3- A ruthenium complex mixture containing one or more ruthenium complexes selected from the group consisting of cyclohexadiene) ruthenium and carbonylbis (2-methyl-1,3-pentadiene) ruthenium is made into a ruthenium-containing thin film using a reducing gas. A method for producing a ruthenium-containing thin film. ^2. The production method according to claim 1, wherein, in the general formula [1], R ¹ and R ³ are both hydrogen, R ² is an ethyl group, and R ⁴ and R ⁵ are both methyl groups. 2. The production method according to claim 1, wherein in general formula [2], R ⁶ and R ⁸ are both hydrogen and R ⁷ and R ⁹ are both ethyl groups. The manufacturing method according to claim 1, wherein chemical vapor deposition or atomic layer deposition is used. The production method according to claim 1, wherein ammonia is used as the reducing gas. A ruthenium-containing thin film produced by the method according to claim 1. A ruthenium-containing thin film according to claim 6 is used for an electrode portion and / or a wiring portion.

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