JP2014112577A - Raw material for cleaning and cleaning method - Google Patents
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Abstract
【課題】パーティクルを新たに発生させることなく、試料保持具上の付着物を場所に寄らずに均等に除去し、当該試料保持具の平面度の維持を図りうるクリーニング用素材および方法を提供する。
【解決手段】クリーニング用素材１のクリーニング面１１の表面粗さＸ［μｍ］および平面度Ｙ［μｍ］の組み合わせを表わすプロットが、Ｘ−Ｙ平面において０．２０≦Ｘ≦０．５０および０．１０≦Ｙ≦０．４０で表わされる第１指定範囲Ｃ１、またはその一部である０．３０≦Ｘ≦０．４０および０．２０≦Ｙ≦０．３０で表わされる第２指定範囲Ｃ２に含まれている。
【選択図】図２The present invention provides a cleaning material and method capable of removing deposits on a sample holder evenly without depending on the location without newly generating particles and maintaining the flatness of the sample holder. .
A plot representing a combination of surface roughness X [μm] and flatness Y [μm] of a cleaning surface 11 of a cleaning material 1 is 0.20 ≦ X ≦ 0.50 and 0 in the XY plane. The first designated range C1 represented by .10 ≦ Y ≦ 0.40, or the second designated range C2 represented by 0.30 ≦ X ≦ 0.40 and 0.20 ≦ Y ≦ 0.30 which are a part thereof. Included.
[Selection] Figure 2
Description
本発明は、ウエハを保持するチャック等の試料保持具の表面のデポおよびパーティクルなどの付着物を除去するための素材に関する。 The present invention relates to a material for removing deposits such as deposits and particles on the surface of a sample holder such as a chuck for holding a wafer.
半導体ウエハ基板は、製造工程のなかで製造装置や検査装置の上に複数回保持される。保持方法としては機械的な力、差圧力、静電気力またはクーロン力のような様々な方法がある。近年、半導体ウエハ基板が高面積化しており、それに伴って試料保持具も高面積化が進んでいる。加えて、半導体ウエハ加工の高精度化も進んでいる。よって、ウエハ加工の際、試料保持具の平面度が重要になるため、試料保持具の形状はピンを有したものが多くなっている。ウエハを吸着する試料保持具の表面上にパーティクルやデポなどの付着物があると、ウエハと試料保持具の表面との間に付着物が挟みこまれることにより、ウエハの一部に盛り上がりが発生する場合があり、当該盛り上がりの存在によりウエハの加工精度が低下するおそれがある。 The semiconductor wafer substrate is held a plurality of times on the manufacturing apparatus and the inspection apparatus in the manufacturing process. There are various holding methods such as mechanical force, differential pressure, electrostatic force or coulomb force. In recent years, the area of semiconductor wafer substrates has been increased, and accordingly, the area of sample holders has also been increased. In addition, semiconductor wafer processing has become highly accurate. Therefore, since the flatness of the sample holder becomes important during wafer processing, the shape of the sample holder has many pins. If there are particles, deposits, or other deposits on the surface of the sample holder that adsorbs the wafer, the deposits are sandwiched between the wafer and the surface of the sample holder, and a part of the wafer is raised. In some cases, the processing accuracy of the wafer may decrease due to the presence of the swell.
さらに、試料保持具の高面積化によって、パーティクルやデポなどといった付着物の発生箇所も広範囲となっている。試料保持具の表面上のパーティクルやデポといった付着物を除去するために、クリーニングが行われているが、試料保持具の高面積化によって、洗浄槽などでのクリーニングが困難となっているため、ワイピングクロス等といった従来品や溶剤を用いたクリーニングを行っている。 Furthermore, due to the increase in the area of the sample holder, there are a wide range of places where deposits such as particles and deposits are generated. Cleaning is performed to remove particles and deposits on the surface of the sample holder, but due to the increased area of the sample holder, cleaning in a washing tank is difficult, Cleaning is performed using conventional products such as wiping cloth and solvents.
そこで、真空中で絶縁物であるウエハが電極を載置した上でプラズマにより帯電させ、静電力により試料保持具上に付着しているパーティクルを除去する手法が提案されている（特許文献１参照）。これにより、真空チャンバ内を大気に開放することなく、試料保持具のクリーニングが可能となる。 Therefore, a method has been proposed in which an insulating wafer is charged with plasma after an electrode is placed in a vacuum, and particles adhering to the sample holder are removed by electrostatic force (see Patent Document 1). ). As a result, the sample holder can be cleaned without opening the vacuum chamber to the atmosphere.
しかし、試料保持具が複数のピンを有する場合、当該複数のピン間のパーティクルはウエハに付着しやすいが、ピントップに付着したパーティクルはウエハに付着しにくく、試料保持具上に残存する。これは、ウエハが試料保持具に載置され、ピントップに付着しているパーティクルがウエハによってピントップ面に物理的に押さえつけられることによって、静電力によって除去されないためである。また、ウエハが試料保持具のピンまたはエッジにぶつかることによって、ピントップおよびエッジの欠損のリスクが高く、破損したことにより、新たなパーティクルの原因になっていた。 However, when the sample holder has a plurality of pins, particles between the plurality of pins easily adhere to the wafer, but particles attached to the pin top hardly adhere to the wafer and remain on the sample holder. This is because the wafer is placed on the sample holder and the particles adhering to the pin top are physically pressed against the pin top surface by the wafer and are not removed by the electrostatic force. Further, when the wafer hits the pin or edge of the sample holder, there is a high risk of loss of the pin top and the edge, and due to the damage, a new particle is caused.
そこで、本発明は、パーティクル等の付着物を新たに発生させることなく、試料保持具の付着物を場所に寄らずに均等に除去し、当該試料保持具の平面度の維持を図りうるクリーニング用素材および方法を提供することを目的とする。 Therefore, the present invention is for cleaning that can remove deposits such as particles newly without removing the deposits of the sample holder evenly, and maintain the flatness of the sample holder. The object is to provide materials and methods.
本発明のクリーニング用素材は、絶縁性セラミックスにより構成され、試料保持具の表面に接触するクリーニング面を有するクリーニング用素材であって、前記クリーニング面の表面粗さＸ［μｍ］および平面度Ｙ［μｍ］の組み合わせを表わすプロットが、Ｘ−Ｙ平面において０．２０≦Ｘ≦０．５０および０．１０≦Ｙ≦０．４０で表わされる第１指定範囲に含まれていることを特徴とする。前記プロットが、Ｘ−Ｙ平面において前記第１指定範囲の一部である、０．３０≦Ｘ≦０．４０および０．２０≦Ｙ≦０．３０で表わされる第２指定範囲に含まれていることが好ましい。
前記セラミックスの体積抵抗率の前記試料保持具の体積抵抗率に対する比率が、前記セラミックスの種類に応じて定まる、クリーニング後に前記試料保持具の表面が本来の平面度をもたせることができる所定範囲に含まれていることが好ましい。前記セラミックスがアルミナである場合、前記所定範囲は１０以上の範囲であり、前記セラミックスがジルコニアである場合、前記所定範囲は０．１以上の範囲であることが好ましい。
The cleaning material of the present invention is a cleaning material made of insulating ceramics and having a cleaning surface that comes into contact with the surface of the sample holder. The cleaning surface has a surface roughness X [μm] and a flatness Y [ μm] is included in the first designated range represented by 0.20 ≦ X ≦ 0.50 and 0.10 ≦ Y ≦ 0.40 in the XY plane. . The plot is included in a second designated range represented by 0.30 ≦ X ≦ 0.40 and 0.20 ≦ Y ≦ 0.30, which is a part of the first designated range in the XY plane. Preferably it is.
The ratio of the volume resistivity of the ceramic to the volume resistivity of the sample holder is determined according to the type of the ceramic, and is included in a predetermined range in which the surface of the sample holder can have an original flatness after cleaning. It is preferable that When the ceramic is alumina, the predetermined range is preferably 10 or more, and when the ceramic is zirconia, the predetermined range is preferably 0.1 or more.
本発明のクリーニング方法は、前記クリーニング用素材の前記クリーニング面を試料保持具に対して０．１０［Ｎ／ｃｍ２］以下の圧力で当接させて当該試料保持具上の付着物を除去することを特徴とする。 In the cleaning method of the present invention, the cleaning surface of the cleaning material is brought into contact with the sample holder at a pressure of 0.10 [N / cm 2 ] or less to remove deposits on the sample holder. It is characterized by that.
本発明のクリーニング用素材およびクリーニング方法によれば、試料保持具が有するピンのトップおよびピン同士の間隙等の場所の相違にかかわらず、パーティクルおよびデポ等の付着物が均一かつ確実に除去され、試料保持具の平面度の向上が図られうる。また、ピンの欠損の確率が著しく低減されうる。試料保持具がチャンバの構成部品等に装着されている状態のままクリーニングされうるので、クリーニングの効率化が図られる。 According to the cleaning material and the cleaning method of the present invention, the deposits such as particles and deposits are uniformly and reliably removed regardless of the difference in the location such as the pin top and the gap between the pins of the sample holder, The flatness of the sample holder can be improved. Also, the probability of pin loss can be significantly reduced. Since the sample holder can be cleaned while it is mounted on the components of the chamber, the cleaning efficiency can be improved.
（クリーニング用素材の構成）
図１に示されている本発明の一実施形態としてのクリーニング用素材１は、略円盤状の絶縁性セラミックスにより構成され、試料保持具の表面に接触するクリーニング面１０を有している。セラミックスとしては、アルミナ、イットリアまたはジルコニアなどの酸化物を主原料とするセラミックスが好ましいが、絶縁体であれば、非酸化物を主原料とするセラミックスであってもよい。クリーニング用素材１を構成するセラミックスの体積抵抗率の、試料保持具の体積抵抗率に対する比率が、当該セラミックスの種類に応じて定まる、クリーニング後に試料保持具の表面が本来の平面度をもたせることができる所定範囲に含まれていることが好ましい。具体的には、セラミックスがアルミナである場合、所定範囲は１０以上の範囲である。セラミックスがジルコニアである場合、所定範囲は０．１以上の範囲である。
(Composition of cleaning material)
A cleaning material 1 according to an embodiment of the present invention shown in FIG. 1 is made of a substantially disk-shaped insulating ceramic and has a cleaning surface 10 that contacts the surface of a sample holder. The ceramic is preferably a ceramic mainly composed of an oxide such as alumina, yttria or zirconia, but may be a ceramic mainly composed of a non-oxide as long as it is an insulator. The ratio of the volume resistivity of the ceramic constituting the cleaning material 1 to the volume resistivity of the sample holder is determined according to the type of the ceramic, and the surface of the sample holder may have the original flatness after cleaning. It is preferable to be included in a predetermined range. Specifically, when the ceramic is alumina, the predetermined range is a range of 10 or more. When the ceramic is zirconia, the predetermined range is 0.1 or more.
クリーニング用素材１を構成するセラミックスの相対密度は、結晶粒子の結合力の低下および空隙の過多を回避する観点から９０％以上が好ましい。セラミックスの結晶粒子の結合力が弱いと、当該結晶粒子の一部が脱落して試料保持具の表面に付着し、試料保持具面の平面度の向上が図れない、または、低下させる可能性がある。セラミックスに存在する空隙が多いと、空隙部分に付着物が溜まって、帯電しにくいほどに粗大化したまま付着物として試料保持具面上に残留してしまう。 The relative density of the ceramics constituting the cleaning material 1 is preferably 90% or more from the viewpoint of avoiding a decrease in the bonding force of crystal particles and excessive voids. If the bonding force of the ceramic crystal particles is weak, some of the crystal particles may drop off and adhere to the surface of the sample holder, and the flatness of the sample holder surface may not be improved or may be reduced. is there. If there are many voids in the ceramic, deposits accumulate in the gaps and remain on the surface of the sample holder as deposits while becoming coarse enough to be difficult to be charged.
セラミックスの組織は均一な粒子であることが好ましい。材質によって、粒径は異なるが、いずれも平均粒径１５［μｍ］以下が好ましく、より好ましくは１０［μｍ］以下である。平均粒径が１５［μｍ］よりも粗大であると、クリーニングストーンからの脱粒が起きやすく、新たな付着物の原因になる。セラミックスの純度は９０％以上が好ましい。特に好ましい純度は９５％以上である。純度が９０％未満であると、不純物による発塵が発生し、新たな付着物の原因になる。 The ceramic structure is preferably uniform particles. Although the particle size varies depending on the material, the average particle size is preferably 15 [μm] or less, and more preferably 10 [μm] or less. If the average particle size is larger than 15 [μm], the cleaning stone is likely to fall out, which causes new deposits. The purity of the ceramic is preferably 90% or more. Particularly preferred purity is 95% or more. If the purity is less than 90%, dust generation due to impurities occurs, which causes new deposits.
クリーニング面の表面粗さＸ［μｍ］および平面度Ｙ［μｍ］の組み合わせを表わすプロットが、図２に示されているＸ−Ｙ平面において一点鎖線により画定されている矩形状の第１指定範囲Ｃ１に含まれていることが好ましい。第１指定範囲Ｃ１は、０．２０≦Ｘ≦０．５０および０．１０≦Ｙ≦０．４０で表わされる。当該プロットが、図２に示されているＸ−Ｙ平面において二点鎖線により画定されている矩形状の第２指定範囲Ｃ２に含まれていることがより好ましい。第２指定範囲Ｃ２は、第１指定範囲Ｃ１の一部であり、０．３０≦Ｘ≦０．４０および０．２０≦Ｙ≦０．３０で表わされる。クリーニング面１０の表面粗さが０．２よりも小さい場合、クリーニング面１０と試料保持具がリンキングしてしまい、クリーニング効果がみられず、加えて、試料保持具からクリーニングストーンを脱着する際に過剰に力を加えなければならず、試料保持具を破損させる可能性がある。また、クリーニング面１０の表面粗さが０．５よりも大きい場合、試料保持具を磨耗させ、新たな付着物の原因となる。クリーニング面１０が中凸のような形状であれば、クリーニング可能面積が減り、クリーニングにかかる時間が長くなるため、このような平面度範囲が好ましい。 A rectangular first designated range in which a plot representing a combination of the surface roughness X [μm] and the flatness Y [μm] of the cleaning surface is defined by a one-dot chain line in the XY plane shown in FIG. It is preferable that it is contained in C1. The first designated range C1 is represented by 0.20 ≦ X ≦ 0.50 and 0.10 ≦ Y ≦ 0.40. More preferably, the plot is included in a rectangular second designated range C2 defined by a two-dot chain line in the XY plane shown in FIG. The second designated range C2 is a part of the first designated range C1, and is represented by 0.30 ≦ X ≦ 0.40 and 0.20 ≦ Y ≦ 0.30. When the surface roughness of the cleaning surface 10 is smaller than 0.2, the cleaning surface 10 and the sample holder are linked, and the cleaning effect is not seen. In addition, when the cleaning stone is detached from the sample holder. Excessive force must be applied and can damage the sample holder. Further, when the surface roughness of the cleaning surface 10 is larger than 0.5, the sample holder is worn, causing new deposits. If the cleaning surface 10 is shaped like a convex, the area that can be cleaned is reduced, and the time required for cleaning is increased. Therefore, such a flatness range is preferable.
試料保持具が複数のピンを有する場合、当該ピンの破損を回避する観点から、クリーニング面１０の周縁部分１１がＲ０．５〜１．０［ｍｍ］に加工されていることが好ましい。 When the sample holder has a plurality of pins, the peripheral portion 11 of the cleaning surface 10 is preferably processed to R 0.5 to 1.0 [mm] from the viewpoint of avoiding damage to the pins.
試料保持具の形状に応じてクリーニング用素材１を構成するセラミックスの大きさ及び形状は適当に変更されうる。クリーニング用素材１の試料保持具の表面に対する圧力は０．１０［Ｎ／ｃｍ２］以下であることが好ましい。当該圧力は０．０５［Ｎ／ｃｍ２］以下であることがより好ましい。これにより、クリーニング用素材１の当接によって試料保持具を磨耗または破損させ、新たな付着物を発生させる確率が著しく低減されうる。 Depending on the shape of the sample holder, the size and shape of the ceramic constituting the cleaning material 1 can be appropriately changed. The pressure of the cleaning material 1 against the surface of the sample holder is preferably 0.10 [N / cm 2 ] or less. The pressure is more preferably 0.05 [N / cm 2 ] or less. Thereby, the probability that the sample holder is worn or damaged by the contact of the cleaning material 1 and a new deposit is generated can be significantly reduced.
（実施例）
アルミナに適量の分散剤、バインダーおよびイオン交換水を加え、１８[ｈｒ]混合した後に顆粒を作製した。この顆粒を用いて、１２０[ＭＰａ]にてＣＩＰ 成形し、Φ１００[ｍｍ]形状の成形体を作製した。この成形体を大気雰囲気において、昇温１５[℃/ｈｒ]、１６００[℃]、３[ｈｒ]にて焼成した。このように作製した素材を用いて、表１に示されているように表面粗さおよび平面度が調節されたクリーニング面１０を有する実施例１〜９のセラミックス（アルミナ）がクリーニング用素材１として準備され、当該セラミックス１を用いて試料保持具の表面に対して０．１０［Ｎ／ｃｍ2］の圧力で当接した状態で当該表面がクリーニングされた。なお、クリーニングは、試料保持具が装置に装着された状態で行った。
(Example)
Appropriate amounts of a dispersant, a binder and ion exchange water were added to alumina and mixed for 18 [hr] to prepare granules. Using this granule, CIP molding was performed at 120 [MPa] to produce a molded body having a Φ100 [mm] shape. The molded body was fired in an air atmosphere at a temperature increase of 15 [° C./hr], 1600 [° C.], and 3 [hr]. As shown in Table 1, ceramics (alumina) of Examples 1 to 9 having the cleaning surface 10 whose surface roughness and flatness are adjusted as shown in Table 1 are used as the cleaning material 1. The surface was cleaned using the ceramic 1 in a state where the ceramic 1 was in contact with the surface of the sample holder at a pressure of 0.10 [N / cm 2 ]. The cleaning was performed with the sample holder mounted on the apparatus.
図２のＸ−Ｙ平面には、各実施例のセラミックス１のクリーニング面１０の表面粗さＸおよび平面度Ｙの組み合わせが丸付き数字（数字は該当数番の実施例を示す。）によりプロットされている。実施例１〜９のプロットは、一点鎖線で画定されている第１指定範囲Ｃ１に含まれている。実施例６〜９のプロットは、二点鎖線で画定されている第２指定範囲Ｃ２（第１指定範囲Ｃ１の一部）に含まれている。 In the XY plane of FIG. 2, the combinations of the surface roughness X and the flatness Y of the cleaning surface 10 of the ceramics 1 of each example are plotted by rounded numbers (the numbers indicate examples of corresponding numbers). Has been. The plots of Examples 1 to 9 are included in the first designated range C1 defined by the one-dot chain line. The plots of Examples 6 to 9 are included in the second designated range C2 (part of the first designated range C1) defined by the two-dot chain line.
（比較例）
実施例と同様の方法にて、素材を作製し、表１に示されているように表面粗さおよび平面度が調節されたクリーニング面１０を有する比較例１〜８のクリーニング用素材１が準備され、当該クリーニング用素材１が試料保持具の表面に対して０．１０［Ｎ／ｃｍ2］の圧力で当接した状態で当該表面がクリーニングされた。図２のＸ−Ｙ平面には、各比較例のセラミックス１のクリーニング面１０の表面粗さＸおよび平面度Ｙの組み合わせが四角付き数字（数字は該当数番の実施例を示す。）によりプロットされている。比較例１〜８のプロットは、第１指定範囲Ｃ１から外れている。
(Comparative example)
A material is prepared in the same manner as in the examples, and the cleaning material 1 of Comparative Examples 1 to 8 having the cleaning surface 10 whose surface roughness and flatness are adjusted as shown in Table 1 is prepared. The surface was cleaned with the cleaning material 1 in contact with the surface of the sample holder at a pressure of 0.10 [N / cm 2 ]. In the XY plane of FIG. 2, the combination of the surface roughness X and the flatness Y of the cleaning surface 10 of the ceramics 1 of each comparative example is plotted by square numbers (numbers indicate examples of corresponding numbers). Has been. The plots of Comparative Examples 1 to 8 are out of the first designated range C1.
クリーニング効果の有無を判定するため、レーザー干渉計によりクリーニング前後における試料保持具の表面形状が測定された。図３（ａ）には、試料保持具の表面がクリーニングされる前において、当該表面およびエッジ部分に付着物の存在が確認できる場合の測定結果が示されている。図３（ｂ）には、試料保持具の表面がクリーニングされた後において、当該表面等の付着物が除去され、試料保持具の平面度が回復していることが確認できる場合の測定結果が示されている。表１には、当該測定結果に基づくクリーニング効果の有無の判定結果が示されている。 In order to determine the presence or absence of the cleaning effect, the surface shape of the sample holder before and after cleaning was measured by a laser interferometer. FIG. 3A shows the measurement results when the presence of deposits can be confirmed on the surface and the edge portion before the surface of the sample holder is cleaned. FIG. 3 (b) shows the measurement results when it is possible to confirm that the surface of the sample holder has been cleaned and the deposits on the surface have been removed and the flatness of the sample holder has been recovered. It is shown. Table 1 shows the determination result of the presence or absence of the cleaning effect based on the measurement result.
表１から、次の事実がわかる。すなわち、表面粗さおよび平面度の組み合わせを表わすプロットが第１指定範囲Ｃ１に含まれている実施例１〜９のセラミックスが用いられた場合、試料保持具の表面における付着物が除去されており、クリーニング効果が十分である。特に、当該プロットが第１指定範囲Ｃ１の一部である第２指定範囲Ｃ２に含まれている場合、クリーニング効果が特に十分である。これに対して、当該プロットが第１指定範囲Ｃ１から外れている比較例１〜８のセラミックスが用いられた場合、クリーニング効果が不十分である。 Table 1 shows the following facts. That is, when the ceramics of Examples 1 to 9 in which the plot indicating the combination of the surface roughness and the flatness is included in the first designated range C1, the deposits on the surface of the sample holder are removed. The cleaning effect is sufficient. In particular, when the plot is included in the second designated range C2, which is a part of the first designated range C1, the cleaning effect is particularly sufficient. On the other hand, when the ceramics of Comparative Examples 1 to 8 whose plot is out of the first designated range C1 are used, the cleaning effect is insufficient.
１‥セラミックス（クリーニング用素材）、１０‥クリーニング面、１１‥Ｒ加工。 1. Ceramics (cleaning material), 10. Cleaning surface, 11. R processing.
Claims (3)
前記クリーニング面の表面粗さＸ［μｍ］および平面度Ｙ［μｍ］の組み合わせを表わすプロットが、Ｘ−Ｙ平面において０．２０≦Ｘ≦０．５０および０．１０≦Ｙ≦０．４０で表わされる第１指定範囲に含まれていることを特徴とするクリーニング用素材。 A cleaning material composed of insulating ceramics and having a cleaning surface in contact with the surface of the sample holder,
The plot representing the combination of the surface roughness X [μm] and the flatness Y [μm] of the cleaning surface is 0.20 ≦ X ≦ 0.50 and 0.10 ≦ Y ≦ 0.40 on the XY plane. A cleaning material, which is included in a first designated range represented.
前記プロットが、Ｘ−Ｙ平面において前記第１指定範囲の一部である、０．３０≦Ｘ≦０．４０および０．２０≦Ｙ≦０．３０で表わされる第２指定範囲に含まれていることを特徴とするクリーニング用素材。 The cleaning material according to claim 1,
The plot is included in a second designated range represented by 0.30 ≦ X ≦ 0.40 and 0.20 ≦ Y ≦ 0.30, which is a part of the first designated range in the XY plane. A cleaning material characterized by
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| CN109317430A (en) * | 2018-10-29 | 2019-02-12 | 鋐源光电科技（厦门）有限公司 | A kind of ceramics cleaning stone and preparation method thereof |
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