JP2014170848A - Method for manufacturing semiconductor device, sheet-like resin composition, and dicing tape integrated sheet-like resin composition - Google Patents

Abstract

PROBLEM TO BE SOLVED: To dissolve a sheet-like resin composition attached to the other surface of a wafer with a support when the support is peeled from a wafer with a support bonded to the wafer and the support through a temporary fixing layer. To provide a method for manufacturing a semiconductor device capable of suppressing the occurrence.
SOLUTION: A step of preparing a wafer with a support in which a support is bonded to one surface of a wafer on which a through electrode is formed via a temporary fixing layer; and a sheet-shaped resin composition on a dicing tape. A step B of preparing the formed dicing tape-integrated sheet-shaped resin composition, and a step of attaching the other surface of the wafer with the support to the sheet-shaped resin composition of the dicing tape-integrated sheet-shaped resin composition C, after Step C, Step D for applying an adhesive to the exposed portion of the sheet-shaped resin composition, and Step E for dissolving the temporary fixing layer with a solvent and peeling the support from the wafer. A method for manufacturing a semiconductor device.
[Selection] Figure 4

Description

  The present invention relates to a method for manufacturing a semiconductor device, a sheet-like resin composition, and a dicing tape-integrated sheet-like resin composition.

  2. Description of the Related Art In recent years, in manufacturing semiconductor devices, a semiconductor manufacturing technique is used in which a semiconductor chip is thinned and further laminated in multiple layers while being connected by through silicon vias (TSVs). In order to realize this, a process is required in which a wafer on which a semiconductor circuit is formed is thinned by grinding a non-circuit-formed surface (also referred to as a “back surface”) and an electrode including TSV is formed on the back surface (for example, a patent) Reference 1).

  In such a semiconductor manufacturing technique, back surface grinding is performed in a state where a support is bonded to a wafer in order to compensate for a lack of strength due to thinning. In addition, when the through electrode is formed, since a treatment at a high temperature (for example, 250 ° C. or higher) is included, the support is made of a material having heat resistance (for example, heat resistant glass). .

  On the other hand, a sheet-shaped resin composition used in a flip chip type semiconductor device in which a semiconductor chip is mounted on a substrate by flip chip bonding (flip chip connected), and includes an interface sealing between the semiconductor chip and the substrate. A sheet-shaped resin composition used for stopping is known (for example, see Patent Document 2).

  8 to 11 are views for explaining an example of a conventional method for manufacturing a semiconductor device. As shown in FIG. 8, in the conventional method for manufacturing a semiconductor device, first, a support 120 is placed on one surface 110 a of a wafer 110 on which a through electrode (not shown) is formed via a temporary fixing sheet 130. A bonded wafer 100 with a support is prepared. The wafer with support 100 is, for example, a step of bonding a circuit forming surface of a wafer having a circuit forming surface and a circuit non-forming surface to the support through a temporary fixing layer, and a circuit non-forming surface of the wafer bonded to the support. And a step of processing (for example, TSV formation, electrode formation, metal wiring formation) on the circuit non-formation surface of the wafer having the circuit non-formation surface ground. The reason why the support is bonded to the wafer is to ensure the strength during wafer grinding. Moreover, the process of performing the said process includes the process at high temperature (for example, 250 degreeC or more). Therefore, a support having a certain degree of strength and heat resistance (for example, heat resistant glass) is used.

  Next, as shown in FIG. 9, a dicing tape-integrated sheet-shaped resin composition 140 in which a sheet-shaped resin composition 160 is formed on a dicing tape 150 is prepared. As the sheet-shaped resin composition 160, for example, the sheet-shaped resin composition disclosed in Patent Document 2 is used.

  Next, as shown in FIG. 10, the other surface 110 b of the wafer with support 100 is attached to the sheet-shaped resin composition 160 of the dicing tape-integrated sheet-shaped resin composition 140.

  Next, as shown in FIG. 11, the temporary fixing layer 130 is dissolved with a solvent, and the support 120 is peeled from the wafer 110.

  Thereafter, the wafer 110 is diced together with the sheet-shaped resin composition 160 to form chips with the sheet-shaped resin composition (not shown). Furthermore, the chip with the sheet-shaped resin composition is attached to the mounting substrate, the electrode of the chip and the electrode of the mounting substrate are joined, and the gap between the chip and the mounting substrate is the sheet-shaped composition. Is sealed.

  Thereby, the semiconductor device in which the chip on which the through electrode is formed is mounted on the mounting substrate and the gap between the chip and the mounting substrate is sealed with the sheet-like composition can be obtained.

JP 2012-12573 A Japanese Patent No. 4438973

  However, in the above-described conventional method for manufacturing a semiconductor device, the side surface of the sheet-shaped resin composition 160 is exposed when the temporary fixing layer 130 is dissolved with a solvent and the support 120 is peeled from the wafer 110. Therefore, the sheet-shaped resin composition 160 is also dissolved by the solvent (see FIG. 11). Therefore, there is a possibility that the sheet-shaped resin composition for sealing the gap between the chip and the mounting substrate may not function. In addition, the yield may be reduced.

  The present invention has been made in view of the above-described problems, and an object of the present invention is to remove a support from a wafer with a support in which the wafer and the support are bonded via a temporary fixing layer. Manufacturing method of a semiconductor device capable of suppressing dissolution of the sheet-shaped resin composition affixed to the other surface, a sheet-shaped resin composition used in the manufacturing method of the semiconductor device, and An object of the present invention is to provide a dicing tape-integrated sheet-shaped resin composition used in the method for manufacturing a semiconductor device.

  The inventors of the present application have found that the above-mentioned problems can be solved by adopting the following configuration, and have completed the present invention.

That is, the present invention is a method of manufacturing a semiconductor device,
Preparing a wafer with a support in which the support is bonded to one surface of the wafer on which the through electrode is formed via a temporary fixing layer; and
Preparing a dicing tape-integrated sheet-shaped resin composition in which the sheet-shaped resin composition is formed on the dicing tape; and
A process C for affixing the other surface of the wafer with the support to the sheet-shaped resin composition of the dicing tape-integrated sheet-shaped resin composition;
After the step C, a step D for applying an adhesive to a portion where the sheet-shaped resin composition is exposed;
And a step E of dissolving the temporary fixing layer with the solvent and peeling the support from the wafer.

  According to the method for manufacturing a semiconductor device according to the present invention, a wafer with a support in which a support is bonded to one surface of the wafer via a temporary fixing layer, and a sheet-like resin composition is formed on a dicing tape. After the dicing tape-integrated sheet-shaped resin composition is prepared, the other surface of the wafer with the support is attached to the sheet-shaped resin composition of the dicing tape-integrated sheet-shaped resin composition. Thereafter, an adhesive is applied to a portion where the sheet-shaped resin composition is exposed. When the adhesive is applied to the exposed portion of the sheet-shaped resin composition, the solvent contacts the sheet-shaped resin composition when the temporary fixing layer is dissolved with the solvent and the support is peeled off from the wafer. It becomes difficult to do. As a result, it can suppress that a sheet-like resin composition melt | dissolves.

  In the said structure, after the said process E, it is preferable to comprise the process F which obtains the chip | tip with a sheet-like resin composition by dicing the said wafer with the said sheet-like resin composition. As described above, dissolution of the sheet-shaped resin composition is suppressed. Therefore, the sheet-shaped resin composition in the chip with the sheet-shaped resin composition obtained in the step F functions sufficiently as a sheet-shaped resin composition for sealing the gap between the chip and the mounting substrate.

  In the configuration, after the step F, the chip with the sheet-like resin composition is disposed on a mounting substrate, and the chip has the electrode and the mounting substrate have an electrode, and the chip and the chip It is preferable to include the step G of sealing the gap with the mounting substrate with the sheet-like composition. As described above, dissolution of the sheet-shaped resin composition is suppressed. Therefore, the yield of the semiconductor device obtained by the step G (semiconductor device in which the gap between the chip and the mounting substrate is sealed with the sheet-like composition) can be improved.

  In the above configuration, the step C is preferably performed under reduced pressure. When Step C is performed under reduced pressure, generation of voids at the interface between the wafer and the sheet-shaped resin composition can be suppressed, and the wafer and the sheet-shaped resin composition can be bonded together more suitably.

  Moreover, in order to solve the said subject, this invention is a sheet-like resin composition, Comprising: It is used in the manufacturing method of the semiconductor device as described above.

  Moreover, in order to solve the said subject, this invention is a dicing tape integrated sheet-like resin composition, Comprising: It is used in the manufacturing method of the semiconductor device as described above. According to the said structure, since the dicing tape integrated sheet-like resin composition is used, it is further excellent at the point which can abbreviate | omit the process of bonding a dicing tape and a sheet-like resin composition.

  According to the present invention, when the support is peeled from the wafer with the support in which the wafer and the support are bonded via the temporary fixing layer, the sheet-like resin composition attached to the other surface of the wafer with the support. It becomes possible to suppress dissolution of the object.

It is a cross-sectional schematic diagram for demonstrating the manufacturing method of the semiconductor device which concerns on one Embodiment of this invention. It is a cross-sectional schematic diagram for demonstrating the manufacturing method of the semiconductor device which concerns on one Embodiment of this invention. It is a cross-sectional schematic diagram for demonstrating the manufacturing method of the semiconductor device which concerns on one Embodiment of this invention. It is a cross-sectional schematic diagram for demonstrating the manufacturing method of the semiconductor device which concerns on one Embodiment of this invention. It is a cross-sectional schematic diagram for demonstrating the manufacturing method of the semiconductor device which concerns on one Embodiment of this invention. It is a cross-sectional schematic diagram for demonstrating the manufacturing method of the semiconductor device which concerns on one Embodiment of this invention. It is a cross-sectional schematic diagram for demonstrating the manufacturing method of the semiconductor device which concerns on one Embodiment of this invention. It is a cross-sectional schematic diagram for demonstrating an example of the manufacturing method of the conventional semiconductor device. It is a cross-sectional schematic diagram for demonstrating an example of the manufacturing method of the conventional semiconductor device. It is a cross-sectional schematic diagram for demonstrating an example of the manufacturing method of the conventional semiconductor device. It is a cross-sectional schematic diagram for demonstrating an example of the manufacturing method of the conventional semiconductor device.

  Embodiments of the present invention will be described below with reference to the drawings. 1 to 7 are schematic cross-sectional views for explaining a method for manufacturing a semiconductor device according to an embodiment of the present invention.

  The method for manufacturing a semiconductor device according to the present embodiment provides a process A (with a support) for preparing a wafer with a support in which the support is bonded to one surface of the wafer on which the through electrode is formed via a temporary fixing layer. Wafer preparation step), step B (dicing tape-integrated sheet-shaped resin composition preparing step) for preparing a dicing tape-integrated sheet-shaped resin composition in which a sheet-shaped resin composition is formed on the dicing tape, and the support Step C (sticking step) for sticking the other surface of the wafer with a body to the sheet-like resin composition of the dicing tape-integrated sheet-like resin composition, and after the step C, the sheet-like resin Step D (adhesive application step) of applying an adhesive to the exposed part of the composition, and dissolving the temporary fixing layer with the solvent, and peeling the support from the wafer Extent at least and a E (support peeling step).

[Wafer preparation process with support]
In the wafer preparation step with support (step A), first, the support 12 is bonded to the one surface 11a of the wafer 11 on which the through electrode (not shown) is formed via the temporary fixing layer 13. The attached wafer 10 is prepared (see FIG. 1). The wafer with support 10 is, for example, a step of bonding a circuit forming surface of a wafer having a circuit forming surface and a circuit non-forming surface (back surface) to the support 12 via the temporary fixing layer 13 (support bonding step). Grinding the circuit non-formation surface of the wafer bonded to the support 12 (wafer back surface grinding step), and processing the circuit non-formation surface of the wafer after grinding the circuit non-formation surface (for example, TSV (through electrode) formation), It is obtained by a step (circuit non-formation surface processing step) of performing electrode formation and metal wiring formation. More specifically, the process of processing the non-circuit-formed surface of the wafer includes metal sputtering for forming electrodes, wet etching for etching the metal sputtering layer, and resist for forming a mask for forming metal wiring. Conventionally known processes such as pattern formation by coating, exposure, and development, resist peeling, dry etching, metal plating formation, silicon etching for TSV formation, and oxide film formation on the silicon surface can be mentioned. The reason why the support 12 is bonded to the wafer 11 is to ensure the strength at the time of wafer grinding. Moreover, the process of performing the said process includes the process at high temperature (for example, 250 degreeC or more). Therefore, a material having a certain degree of strength and heat resistance (for example, heat resistant glass) is used for the support 12.

(Support)
As the support 12, one having a certain degree of strength and heat resistance can be used. Examples of the support 12 include heat-resistant glass, heat-resistant engineer plastic, and a wafer (for example, the wafer 11).

(Wafer)
Examples of the wafer 11 include a silicon wafer, a germanium wafer, a gallium-arsenic wafer, a gallium-phosphorus wafer, and a gallium-arsenic-aluminum wafer.

(Temporary fixing layer)
The adhesive composition constituting the temporary fixing layer 13 is not peeled off from the support 11 and the wafer 12 during the wafer back surface grinding step and the circuit non-formation surface processing step, and the step E ( There is no particular limitation as long as the support 11 is selected so that it can be peeled off from the wafer 12 by dissolving in a solvent in the support peeling step). The forming material for forming such a temporary fixing layer 13 is not particularly limited, and examples thereof include a polyimide resin, a silicone resin, an aliphatic olefin resin, a hydrogenated styrene thermoplastic elastomer, and an acrylic resin.

  The polyimide resin can be generally obtained by imidizing (dehydrating and condensing) a polyamic acid that is a precursor thereof. As a method for imidizing the polyamic acid, for example, a conventionally known heat imidization method, azeotropic dehydration method, chemical imidization method and the like can be employed. Of these, the heating imidization method is preferable. When the heat imidization method is employed, it is preferable to perform heat treatment under a nitrogen atmosphere or an inert atmosphere such as a vacuum in order to prevent deterioration of the polyimide resin due to oxidation.

  The polyamic acid can be obtained by charging and reacting an acid anhydride and a diamine so as to have a substantially equimolar ratio in an appropriately selected solvent.

  Although it does not specifically limit as said polyimide resin, What has the structural unit derived from the diamine which has an ether structure can be used. The diamine having an ether structure is not particularly limited as long as it is a compound having an ether structure and having at least two terminals having an amine structure. Among the diamines having an ether structure, a diamine having a glycol skeleton is preferable.

  Examples of the diamine having a glycol skeleton include a polypropylene glycol structure and a diamine having one amino group at each end, a polyethylene glycol structure, and one amino group at each end. And a diamine having a polytetramethylene glycol structure and having one amino group at each end. Moreover, the diamine which has two or more of these glycol structures and has one amino group in both the ends can be mentioned.

  The molecular weight of the diamine having an ether structure is preferably in the range of 100 to 5000, and more preferably 150 to 4800. When the molecular weight of the diamine having an ether structure is in the range of 100 to 5000, it is easy to obtain the temporary fixing layer 13 having high adhesive strength at low temperatures and exhibiting peelability at high temperatures.

  In forming the polyimide resin, in addition to a diamine having an ether structure, another diamine having no ether structure may be used in combination. Examples of other diamines having no ether structure include aliphatic diamines and aromatic diamines. By using in combination with other diamine having no ether structure, the adhesion with the adherend can be controlled. As a mixing ratio of the diamine having an ether structure and another diamine not having an ether structure, the molar ratio is preferably 100: 0 to 20:80, and more preferably 99: 1 to 30:70.

  Examples of the aliphatic diamine include ethylenediamine, hexamethylenediamine, 1,8-diaminooctane, 1,10-diaminodecane, 1,12-diaminododecane, 4,9-dioxa-1,12-diaminododecane, , 3-bis (3-aminopropyl) -1,1,3,3-tetramethyldisiloxane (α, ω-bisaminopropyltetramethyldisiloxane) and the like. The molecular weight of the aliphatic diamine is usually 50 to 1,000,000, preferably 100 to 30,000.

  Examples of the aromatic diamine include 4,4′-diaminodiphenyl ether, 3,4′-diaminodiphenyl ether, 3,3′-diaminodiphenyl ether, m-phenylenediamine, p-phenylenediamine, and 4,4′-diaminodiphenylpropane. 3,3′-diaminodiphenylmethane, 4,4′-diaminodiphenyl sulfide, 3,3′-diaminodiphenyl sulfide, 4,4′-diaminodiphenyl sulfone, 3,3′-diaminodiphenyl sulfone, 1,4-bis (4-aminophenoxy) benzene, 1,3-bis (4-aminophenoxy) benzene, 1,3-bis (3-aminophenoxy) benzene, 1,3-bis (4-aminophenoxy) -2,2- Dimethylpropane, 4,4'-diaminobenzophenone, etc. It is. The molecular weight of the aromatic diamine is usually 50 to 1000, preferably 100 to 500. In addition, in this specification, molecular weight means the value (weight average molecular weight) measured by GPC (gel permeation chromatography) and computed by polystyrene conversion.

  Examples of the acid anhydride include 3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride, 2,2 ′, 3,3′-biphenyltetracarboxylic dianhydride, 3,3 ′, 4,4′-benzophenone tetracarboxylic dianhydride, 2,2 ′, 3,3′-benzophenone tetracarboxylic dianhydride, 4,4′-oxydiphthalic dianhydride, 2,2-bis (2, 3-dicarboxyphenyl) hexafluoropropane dianhydride, 2,2-bis (3,4-dicarboxyphenyl) hexafluoropropane dianhydride (6FDA), bis (2,3-dicarboxyphenyl) methane dianhydride Bis (3,4-dicarboxyphenyl) methane dianhydride, bis (2,3-dicarboxyphenyl) sulfone dianhydride, bis (3,4-dicarboxyphenyl) sulfone Anhydride, pyromellitic dianhydride, ethylene glycol bis trimellitic dianhydride and the like. These may be used alone or in combination of two or more.

  Examples of the solvent for reacting the acid anhydride with the diamine include N, N-dimethylacetamide, N-methyl-2-pyrrolidone, N, N-dimethylformamide, and cyclopentanone. These may be used alone or in combination. Further, in order to adjust the solubility of raw materials and resins, a nonpolar solvent such as toluene or xylene may be appropriately mixed and used.

  When a polyimide resin having a structural unit derived from a diamine having an ether structure is used for the temporary fixing layer 13, the temporary fixing layer 13 is immersed in N-methyl-2-pyrrolidone (NMP) at 50 ° C. for 60 seconds, and 150 ° C. The weight loss after drying for 30 minutes is preferably 1.0% by weight or more, more preferably 1.2% by weight or more, and further preferably 1.3% by weight or more. Moreover, although the said weight decreasing rate is so preferable that it is large, it is 50 weight% or less and 30 weight% or less, for example. When the weight reduction rate after being immersed in N-methyl-2-pyrrolidone (NMP) at 50 ° C. for 60 seconds and dried at 150 ° C. for 30 minutes is 1% by weight or more, the temporary fixing layer 13 is N-methyl-2. -It can be said that it is dissolved in pyrrolidone and sufficiently reduced in weight. As a result, the temporary fixing layer 13 can be easily peeled off with N-methyl-2-pyrrolidone. The weight reduction rate of the temporary fixing layer 13 can be controlled by, for example, the solubility of the raw material in NMP. That is, as the raw material having a higher solubility in NMP is selected, the temporary fixing layer 13 obtained using the raw material has a higher solubility in NMP.

  Examples of the silicone resin include peroxide cross-linked silicone pressure-sensitive adhesives, addition reaction type silicone pressure-sensitive adhesives, dehydrogenation reaction type silicone pressure-sensitive adhesives, and moisture-curing type silicone pressure-sensitive adhesives. The said silicone resin may be used individually by 1 type, and may use 2 or more types together. The silicone resin is excellent in terms of high heat resistance. Among the silicone resins, addition reaction type silicone pressure-sensitive adhesives are preferable in terms of few impurities.

  When using the said silicone resin for the temporary fix layer 13, the temporary fix layer 13 may contain another additive as needed. Examples of such other additives include flame retardants, silane coupling agents, and ion trapping agents. Examples of the flame retardant include antimony trioxide, antimony pentoxide, and brominated epoxy resin. Examples of the silane coupling agent include β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, and the like. Examples of the ion trapping agent include hydrotalcites and bismuth hydroxide. Such other additives may be only one kind or two or more kinds.

  The acrylic resin is not particularly limited, and includes one or two or more esters of acrylic acid or methacrylic acid having a linear or branched alkyl group having 30 or less carbon atoms, particularly 4 to 18 carbon atoms. Examples thereof include a polymer (acrylic copolymer) as a component. Examples of the alkyl group include a methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, t-butyl group, isobutyl group, amyl group, isoamyl group, hexyl group, heptyl group, cyclohexyl group, 2- Examples include an ethylhexyl group, an octyl group, an isooctyl group, a nonyl group, an isononyl group, a decyl group, an isodecyl group, an undecyl group, a lauryl group, a tridecyl group, a tetradecyl group, a stearyl group, an octadecyl group, and a dodecyl group.

  In addition, the other monomer forming the polymer is not particularly limited, and examples thereof include acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. Carboxyl group-containing monomers such as acid anhydride monomers such as maleic anhydride or itaconic anhydride, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4- (meth) acrylic acid 4- Hydroxybutyl, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate or (4-hydroxymethylcyclohexyl) -Methyla Hydroxyl group-containing monomers such as relate, styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamide-2-methylpropane sulfonic acid, (meth) acrylamide propane sulfonic acid, sulfopropyl (meth) acrylate or (meth) Examples thereof include sulfonic acid group-containing monomers such as acryloyloxynaphthalene sulfonic acid, and phosphoric acid group-containing monomers such as 2-hydroxyethylacryloyl phosphate.

  The temporary fixing layer 13 is produced as follows, for example. First, a resin composition solution for forming a temporary fixing layer (when the temporary fixing layer 13 is formed of a polyimide resin, a solution containing the polyamic acid) is prepared. Next, the solution is applied on a substrate to a predetermined thickness to form a coating film, and then the coating film is dried under a predetermined condition. Examples of the base material include metal foil such as SUS304, 6-4 alloy, aluminum foil, copper foil, Ni foil, polyethylene terephthalate (PET), polyethylene, polypropylene, fluorine-based release agent, and long-chain alkyl acrylate release agent. A plastic film, paper, or the like whose surface is coated with a release agent such as, can be used. Moreover, it does not specifically limit as a coating method, For example, roll coating, screen coating, gravure coating, spin coat coating etc. are mentioned. As drying conditions, for example, the drying temperature is 50 to 150 ° C. and the drying time is 3 to 30 minutes. Thereby, the temporary fixing layer 13 which concerns on this embodiment is obtained.

  The wafer with support 10 in which the wafer 11 and the support 12 are bonded via the temporary fixing layer 13 can be manufactured by transferring the temporary fixing layer 13 to the support 12 and then bonding the wafer 11 together. Alternatively, after the temporary fixing layer 13 is transferred to the wafer 11, the support 12 can be bonded together. In addition, the wafer 10 with the support is formed by directly applying the resin composition solution for forming the temporary fixing layer to the support 12 to form a coating film, and then drying the coating film under a predetermined condition. 13 and then the wafer 11 may be bonded together. Alternatively, after a resin composition solution for forming a temporary fixing layer is directly applied to the wafer 11 to form a coating film, the coating film is dried under predetermined conditions to form a temporary fixing layer 13, and then the support 12. May be produced by laminating.

[Dicing tape-integrated sheet-shaped resin composition preparation step]
Next, in the dicing tape-integrated sheet-shaped resin composition preparation step (process B), a dicing tape-integrated sheet-shaped resin composition 14 in which the sheet-shaped resin composition 16 is formed on the dicing tape 15 is prepared (FIG. 2). The dicing tape-integrated sheet-shaped resin composition 14 may be prepared in a state in which the dicing tape 15 and the sheet-shaped resin composition 16 are bonded together in advance. The dicing tape 15 and the sheet-shaped resin composition 16 May be prepared separately and prepared by bonding them together. The shape of the sheet-shaped resin composition 16 is not particularly limited, but may be a circle, a rectangle, or the like. The size and shape of the sheet-shaped resin composition 16 are not particularly limited. For example, when the wafer 11 has a circular shape (for example, a diameter of 290 mm), the circular shape (for example, the diameter is smaller than the wafer 11). 280 mm), a circular shape having the same diameter as the wafer 11, or a circular shape having a larger diameter than the wafer 11 (for example, a diameter of 300 mm). Whatever the shape of the sheet-like resin composition 16, if an adhesive is applied to the exposed part of the sheet-like resin composition 16 in the adhesive application step (step D) described later, This is because the solvent can be made difficult to contact the sheet-like resin composition 16. In this case, the wafer 11 and the sheet-shaped resin composition 16 are preferably laminated so that the centers are aligned. In the present embodiment, the case where the outer shape of the sheet-like resin composition 16 is the same as the outer shape of the other surface 11b of the wafer 11 will be described.

(Dicing tape)
The dicing tape 15 is configured by forming an adhesive layer on a base material. The base material can be used as a support matrix such as an adhesive layer. Examples of the substrate include paper-based substrates such as paper; fiber-based substrates such as cloth, nonwoven fabric, felt, and net; metal-based substrates such as metal foil and metal plate; plastic-based substrates such as plastic films. A rubber-based substrate such as a rubber sheet; a foamed material such as a foamed sheet; and a suitable laminate such as a laminate (for example, a laminate of a plastic-based substrate and another substrate or a laminate of plastic films). Thin leaves can be used. In the present invention, a plastic substrate can be suitably used as the substrate. Examples of the material in such a plastic material include, for example, olefin resins such as polyethylene (PE), polypropylene (PP), and ethylene-propylene copolymer; ethylene-vinyl acetate copolymer (EVA), ionomer resin, ethylene- (Meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester (random, alternating) copolymer such as ethylene copolymer; polyethylene terephthalate (PET), polyethylene naphthalate (PEN), Polyester such as polybutylene terephthalate (PBT); Acrylic resin; Polyvinyl chloride (PVC); Polyurethane; Polycarbonate; Polyphenylene sulfide (PPS); Amide resin such as polyamide (nylon) and wholly aromatic polyamide (aramid); Ether ether ketone (PEEK); polyimides; polyetherimides; polyvinylidene chloride; ABS (acrylonitrile - butadiene - styrene copolymer); cellulosic resins; silicone resins; and fluorine resins.

  Examples of the material of the base material include polymers such as a crosslinked body of the resin. The plastic film may be used unstretched or may be uniaxially or biaxially stretched as necessary. According to the resin sheet to which heat shrinkability is imparted by stretching treatment or the like, the adhesive area between the pressure-sensitive adhesive layer and the sheet-like resin composition 16 is reduced by thermally shrinking the base material after dicing, and the semiconductor element is recovered. Can be facilitated.

  The surface of the base material is chemically treated by conventional surface treatments such as chromic acid treatment, ozone exposure, flame exposure, high piezoelectric impact exposure, ionizing radiation treatment, etc. in order to improve adhesion and retention with adjacent layers. Alternatively, a physical treatment or a coating treatment with a primer (for example, an adhesive substance described later) can be performed.

  As the substrate, the same kind or different kinds can be appropriately selected and used, and if necessary, a blend of several kinds can be used. Moreover, in order to provide the base material with an antistatic ability, a conductive material vapor deposition layer having a thickness of about 30 to 500 mm and made of a metal, an alloy, or an oxide thereof is provided on the base material. Can do. The substrate may be a single layer or a multilayer of two or more types.

  The thickness of the base material (total thickness in the case of a laminate) is not particularly limited and can be appropriately selected according to strength, flexibility, purpose of use, and the like, for example, generally 1000 μm or less (for example, 1 μm to 1000 μm), preferably 10 μm to 500 μm, more preferably 20 μm to 300 μm, particularly about 30 μm to 200 μm, but is not limited thereto.

  The base material contains various additives (colorants, fillers, plasticizers, anti-aging agents, antioxidants, surfactants, flame retardants, etc.) as long as the effects of the present invention are not impaired. It may be.

  The said adhesive layer is formed with the adhesive and has adhesiveness. Such an adhesive is not particularly limited, and can be appropriately selected from known adhesives. Specifically, examples of the adhesive include acrylic adhesive, rubber adhesive, vinyl alkyl ether adhesive, silicone adhesive, polyester adhesive, polyamide adhesive, urethane adhesive, fluorine Type adhesives, styrene-diene block copolymer adhesives, and known adhesives such as a creep property-improving adhesive in which a hot-melt resin having a melting point of about 200 ° C. or less is blended with these adhesives (for example, JP-A-56-61468, JP-A-61-174857, JP-A-63-17981, JP-A-56-13040, etc.) It can be selected and used. Moreover, as a pressure sensitive adhesive, a radiation curable pressure sensitive adhesive (or energy ray curable pressure sensitive adhesive) or a thermally expandable pressure sensitive adhesive can be used. An adhesive can be used individually or in combination of 2 or more types.

  As the pressure-sensitive adhesive, acrylic pressure-sensitive adhesives and rubber-based pressure-sensitive adhesives can be suitably used, and acrylic pressure-sensitive adhesives are particularly preferable. As an acrylic adhesive, an acrylic adhesive based on an acrylic polymer (homopolymer or copolymer) using one or more (meth) acrylic acid alkyl esters as monomer components. Agents.

  Examples of the (meth) acrylic acid alkyl ester in the acrylic pressure-sensitive adhesive include, for example, methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, isopropyl (meth) acrylate, and (meth) acrylic. Butyl acid, isobutyl (meth) acrylate, s-butyl (meth) acrylate, t-butyl (meth) acrylate, pentyl (meth) acrylate, hexyl (meth) acrylate, heptyl (meth) acrylate, ( Octyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, isooctyl (meth) acrylate, nonyl (meth) acrylate, isononyl (meth) acrylate, decyl (meth) acrylate, isodecyl (meth) acrylate, Undecyl (meth) acrylate, dodecyl (meth) acrylate, (meta Tridecyl acrylate, tetradecyl (meth) acrylate, pentadecyl (meth) acrylate, hexadecyl (meth) acrylate, heptadecyl (meth) acrylate, octadecyl (meth) acrylate, nonadecyl (meth) acrylate, (meth) acrylic Examples include (meth) acrylic acid alkyl esters such as acid eicosyl. The (meth) acrylic acid alkyl ester is preferably a (meth) acrylic acid alkyl ester having 4 to 18 carbon atoms in the alkyl group. In addition, the alkyl group of the (meth) acrylic acid alkyl ester may be either linear or branched.

  In addition, the said acrylic polymer is another monomer component (for example) copolymerizable with the said (meth) acrylic-acid alkylester as needed for the purpose of modification | reformation, such as cohesion force, heat resistance, and crosslinkability. A unit corresponding to the copolymerizable monomer component) may be included. Examples of such copolymerizable monomer components include (meth) acrylic acid (acrylic acid, methacrylic acid), carboxyl such as carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. Group-containing monomer; Acid anhydride group-containing monomer such as maleic anhydride, itaconic anhydride; hydroxyethyl (meth) acrylate, hydroxypropyl (meth) acrylate, hydroxybutyl (meth) acrylate, hydroxy (meth) acrylate Hydroxyl group-containing monomers such as hexyl, hydroxyoctyl (meth) acrylate, hydroxydecyl (meth) acrylate, hydroxylauryl (meth) acrylate, (4-hydroxymethylcyclohexyl) methyl methacrylate; styrene sulfonic acid, Sulfonic acid group-containing monomers such as rylsulfonic acid, 2- (meth) acrylamide-2-methylpropanesulfonic acid, (meth) acrylamidepropanesulfonic acid, sulfopropyl (meth) acrylate, (meth) acryloyloxynaphthalenesulfonic acid; Phosphoric acid group-containing monomers such as hydroxyethyl acryloyl phosphate; (meth) acrylamide, N, N-dimethyl (meth) acrylamide, N-butyl (meth) acrylamide, N-methylol (meth) acrylamide, N-methylolpropane (meth) (N-substituted) amide monomers such as acrylamide; (meth) acrylic acid such as aminoethyl (meth) acrylate, N, N-dimethylaminoethyl (meth) acrylate, and t-butylaminoethyl (meth) acrylate A Noalkyl monomers; (meth) acrylic acid alkoxyalkyl monomers such as methoxyethyl (meth) acrylate and ethoxyethyl (meth) acrylate; cyanoacrylate monomers such as acrylonitrile and methacrylonitrile; glycidyl (meth) acrylate and the like Epoxy group-containing acrylic monomers; styrene monomers such as styrene and α-methylstyrene; vinyl ester monomers such as vinyl acetate and vinyl propionate; olefin monomers such as isoprene, butadiene and isobutylene; vinyl ether monomers such as vinyl ether; N-vinyl pyrrolidone, methyl vinyl pyrrolidone, vinyl pyridine, vinyl piperidone, vinyl pyrimidine, vinyl piperazine, vinyl pyrazine, vinyl pyrrole, vinyl imida Nitrogen-containing monomers such as benzene, vinyl oxazole, vinyl morpholine, N-vinyl carboxylic acid amides, N-vinyl caprolactam; maleimides such as N-cyclohexylmaleimide, N-isopropylmaleimide, N-laurylmaleimide, N-phenylmaleimide Monomers: Itaconimide monomers such as N-methylitaconimide, N-ethylitaconimide, N-butylitaconimide, N-octylitaconimide, N-2-ethylhexylitaconimide, N-cyclohexylitaconimide, N-laurylitaconimide N- (meth) acryloyloxymethylene succinimide, N- (meth) acryloyl-6-oxyhexamethylene succinimide, N- (meth) acryloyl-8-oxyoctamethylenesk Succinimide monomers such as N-imide; glycol-based acrylic ester monomers such as (meth) acrylic acid polyethylene glycol, (meth) acrylic acid polypropylene glycol, (meth) acrylic acid methoxyethylene glycol, (meth) acrylic acid methoxypolypropylene glycol; ) Acrylic acid ester monomer having heterocycle such as tetrahydrofurfuryl acrylate, fluorine (meth) acrylate, silicone (meth) acrylate, halogen atom, silicon atom, etc .; hexanediol di (meth) acrylate, (poly) ethylene glycol Di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, pentaerythritol di (meth) a Chryrate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy acrylate, polyester acrylate, urethane acrylate, divinylbenzene, butyldi (meth) acrylate, hexyldi (meth) And polyfunctional monomers such as acrylate. These copolymerizable monomer components can be used alone or in combination of two or more.

  When a radiation curable pressure sensitive adhesive (or energy ray curable pressure sensitive adhesive) is used as the pressure sensitive adhesive, examples of the radiation curable pressure sensitive adhesive (composition) include a radical reactive carbon-carbon double bond as a polymer side chain or a main chain. Intrinsic radiation curable adhesives that use polymers in the chain or at the end of the main chain as the base polymer, and radiation curable adhesives that contain UV-curable monomer or oligomer components in the adhesive It is done. Moreover, when using a heat-expandable adhesive as an adhesive, as a heat-expandable adhesive, the heat-expandable adhesive containing an adhesive and a foaming agent (especially heat-expandable microsphere) etc. are mentioned, for example.

  In the present invention, the pressure-sensitive adhesive layer has various additives (for example, a tackifier resin, a colorant, a thickener, a bulking agent, a filler, a plasticizer, and an anti-aging agent as long as the effects of the present invention are not impaired. , Antioxidants, surfactants, cross-linking agents, etc.).

  The crosslinking agent is not particularly limited, and a known crosslinking agent can be used. Specifically, as the crosslinking agent, an isocyanate crosslinking agent, an epoxy crosslinking agent, a melamine crosslinking agent, a peroxide crosslinking agent, a urea crosslinking agent, a metal alkoxide crosslinking agent, a metal chelate crosslinking agent. , Metal salt crosslinking agents, carbodiimide crosslinking agents, oxazoline crosslinking agents, aziridine crosslinking agents, amine crosslinking agents, and the like, and isocyanate crosslinking agents and epoxy crosslinking agents are preferred. A crosslinking agent can be used individually or in combination of 2 or more types. In addition, the usage-amount of a crosslinking agent is not restrict | limited in particular.

  Examples of the isocyanate-based crosslinking agent include lower aliphatic polyisocyanates such as 1,2-ethylene diisocyanate, 1,4-butylene diisocyanate, and 1,6-hexamethylene diisocyanate; cyclopentylene diisocyanate, cyclohexylene diisocyanate, Cycloaliphatic polyisocyanates such as isophorone diisocyanate, hydrogenated tolylene diisocyanate, hydrogenated xylene diisocyanate; 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 4,4'- Aromatic polyisocyanates such as diphenylmethane diisocyanate and xylylene diisocyanate, and the like, and other trimethylolpropane / tolylene diisocyanate trimer adducts [Japan Polyurethane Industry Co., Ltd.] , Trade name "Coronate L"], trimethylolpropane / hexamethylene diisocyanate trimer adduct [Nippon Polyurethane Industry Co., Ltd. under the trade name "Coronate HL"], and the like are also used. Examples of the epoxy-based crosslinking agent include N, N, N ′, N′-tetraglycidyl-m-xylenediamine, diglycidylaniline, 1,3-bis (N, N-glycidylaminomethyl) cyclohexane, 1,6-hexanediol diglycidyl ether, neopentyl glycol diglycidyl ether, ethylene glycol diglycidyl ether, propylene glycol diglycidyl ether, polyethylene glycol diglycidyl ether, polypropylene glycol diglycidyl ether, sorbitol polyglycidyl ether, glycerol polyglycidyl ether , Pentaerythritol polyglycidyl ether, polyglycerol polyglycidyl ether, sorbitan polyglycidyl ether, trimethylolpropane poly In addition to lysidyl ether, adipic acid diglycidyl ester, o-phthalic acid diglycidyl ester, triglycidyl-tris (2-hydroxyethyl) isocyanurate, resorcin diglycidyl ether, bisphenol-S-diglycidyl ether, epoxy in the molecule Examples thereof include an epoxy resin having two or more groups.

  In the present invention, instead of using a cross-linking agent or using a cross-linking agent, it is possible to carry out a cross-linking treatment by irradiation with an electron beam or ultraviolet rays.

  The pressure-sensitive adhesive layer is formed, for example, by using a conventional method of forming a sheet-like layer by mixing a pressure-sensitive adhesive (pressure-sensitive adhesive) and, if necessary, a solvent or other additives. be able to. Specifically, for example, a method of applying a mixture containing a pressure-sensitive adhesive and, if necessary, a solvent and other additives onto the substrate, and applying the mixture onto an appropriate separator (such as release paper) The pressure-sensitive adhesive layer can be formed by a method of forming a pressure-sensitive adhesive layer and transferring (transferring) it onto the substrate.

  The thickness of the pressure-sensitive adhesive layer is not particularly limited, and is, for example, about 5 μm to 300 μm (preferably 5 μm to 200 μm, more preferably 5 μm to 100 μm, particularly preferably 7 μm to 50 μm). When the thickness of the pressure-sensitive adhesive layer is within the above range, an appropriate adhesive force can be exhibited. The pressure-sensitive adhesive layer may be either a single layer or multiple layers.

(Sheet-shaped resin composition)
The sheet-like resin composition 16 has a function of sealing a gap between a chip 20 (see FIG. 7) formed by dicing the wafer 11 and a mounting substrate 22 (see FIG. 7). Examples of the constituent material of the sheet-like resin composition 16 include a combination of a thermoplastic resin and a thermosetting resin. A thermosetting resin alone can also be used.

  Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, heat Examples thereof include plastic polyimide resins, polyamide resins such as 6-nylon and 6,6-nylon, phenoxy resins, acrylic resins, saturated polyester resins such as PET and PBT, polyamideimide resins, and fluorine resins. These thermoplastic resins can be used alone or in combination of two or more. Among these thermoplastic resins, an acrylic resin that has few ionic impurities and high heat resistance and can ensure the reliability of the semiconductor chip is particularly preferable.

  The acrylic resin is not particularly limited, and includes one or two or more esters of acrylic acid or methacrylic acid having a linear or branched alkyl group having 30 or less carbon atoms, particularly 4 to 18 carbon atoms. Examples include polymers as components. Examples of the alkyl group include a methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, t-butyl group, isobutyl group, amyl group, isoamyl group, hexyl group, heptyl group, cyclohexyl group, 2 -Ethylhexyl group, octyl group, isooctyl group, nonyl group, isononyl group, decyl group, isodecyl group, undecyl group, lauryl group, tridecyl group, tetradecyl group, stearyl group, octadecyl group, dodecyl group and the like.

  In addition, the other monomer forming the polymer is not particularly limited, and examples thereof include acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. Carboxyl group-containing monomers such as acid anhydride monomers such as maleic anhydride or itaconic anhydride, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4- (meth) acrylic acid 4- Hydroxybutyl, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate or (4-hydroxymethylcyclohexyl) -Methyla Hydroxyl group-containing monomers such as relate, styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamide-2-methylpropane sulfonic acid, (meth) acrylamide propane sulfonic acid, sulfopropyl (meth) acrylate or (meth) Examples thereof include sulfonic acid group-containing monomers such as acryloyloxynaphthalene sulfonic acid, and phosphoric acid group-containing monomers such as 2-hydroxyethylacryloyl phosphate.

  Examples of the thermosetting resin include phenol resin, amino resin, unsaturated polyester resin, epoxy resin, polyurethane resin, silicone resin, and thermosetting polyimide resin. These resins can be used alone or in combination of two or more. In particular, an epoxy resin containing a small amount of ionic impurities that corrode the semiconductor chip is preferable. Moreover, as a hardening | curing agent of an epoxy resin, a phenol resin is preferable.

  The epoxy resin is not particularly limited as long as it is generally used as an adhesive composition, for example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type. Biphenyl type, naphthalene type, fluorene type, phenol novolac type, orthocresol novolak type, trishydroxyphenylmethane type, tetraphenylolethane type, etc., bifunctional epoxy resin or polyfunctional epoxy resin, or hydantoin type, trisglycidyl isocyanurate Type or glycidylamine type epoxy resin is used. These can be used alone or in combination of two or more. Of these epoxy resins, novolac type epoxy resins, biphenyl type epoxy resins, trishydroxyphenylmethane type resins or tetraphenylolethane type epoxy resins are particularly preferred. This is because these epoxy resins are rich in reactivity with a phenol resin as a curing agent and are excellent in heat resistance and the like.

  Further, the phenol resin acts as a curing agent for the epoxy resin, for example, a novolac type phenol resin such as a phenol novolac resin, a phenol aralkyl resin, a cresol novolac resin, a tert-butylphenol novolac resin, a nonylphenol novolac resin, Examples include resol-type phenolic resins and polyoxystyrenes such as polyparaoxystyrene. These can be used alone or in combination of two or more. Of these phenol resins, phenol novolac resins and phenol aralkyl resins are particularly preferred. This is because the sealing reliability can be improved.

  The mixing ratio of the epoxy resin and the phenol resin is preferably such that, for example, the hydroxyl group in the phenol resin is 0.5 to 2.0 equivalents per equivalent of epoxy group in the epoxy resin component. More preferred is 0.8 to 1.2 equivalents. That is, if the blending ratio of both is out of the above range, sufficient curing reaction does not proceed and the properties of the cured epoxy resin are likely to deteriorate.

  The thermosetting acceleration catalyst for epoxy resin and phenol resin is not particularly limited, and can be appropriately selected from known thermosetting acceleration catalysts. A thermosetting acceleration | stimulation catalyst can be used individually or in combination of 2 or more types. As the thermosetting acceleration catalyst, for example, an amine curing accelerator, a phosphorus curing accelerator, an imidazole curing accelerator, a boron curing accelerator, a phosphorus-boron curing accelerator, or the like can be used.

  Moreover, an inorganic filler can be suitably mix | blended with the sheet-like resin composition 16. FIG. The blending of the inorganic filler makes it possible to impart conductivity, improve thermal conductivity, adjust the storage elastic modulus, and the like.

  Examples of the inorganic filler include silica, clay, gypsum, calcium carbonate, barium sulfate, alumina, beryllium oxide, silicon carbide, silicon nitride, and other ceramics, aluminum, copper, silver, gold, nickel, chromium, lead. And various inorganic powders made of metals such as tin, zinc, palladium, solder, or alloys, and other carbons. These can be used alone or in combination of two or more. Among these, silica, particularly fused silica is preferably used.

  The average particle size of the inorganic filler is preferably in the range of 0.1 to 30 μm, and more preferably in the range of 0.5 to 25 μm. In the present invention, inorganic fillers having different average particle sizes may be used in combination. The average particle size is a value determined by a photometric particle size distribution meter (manufactured by HORIBA, apparatus name: LA-910).

  The blending amount of the inorganic filler is preferably set to 100 to 1400 parts by weight with respect to 100 parts by weight of the organic resin component. Particularly preferred is 230 to 900 parts by weight. When the blending amount of the inorganic filler is 100 parts by weight or more, heat resistance and strength are improved. Moreover, fluidity | liquidity is securable by setting it as 1400 weight part or less. Thereby, it can prevent that adhesiveness and embedding fall.

  In addition to the said inorganic filler, other additives can be suitably mix | blended with the sheet-like resin composition 16 as needed. Examples of other additives include flame retardants, silane coupling agents, ion trapping agents, pigments such as carbon black, and the like. Examples of the flame retardant include antimony trioxide, antimony pentoxide, brominated epoxy resin, and the like. These can be used alone or in combination of two or more. Examples of the silane coupling agent include β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, and the like. These compounds can be used alone or in combination of two or more. Examples of the ion trapping agent include hydrotalcites and bismuth hydroxide. These can be used alone or in combination of two or more. In consideration of improvement in viscosity at high temperature curing, an elastomer component may be added as an additive for viscosity adjustment. The elastomer component is not particularly limited as long as it thickens the resin. For example, various acrylic copolymers such as polyacrylic acid ester; polystyrene-polyisobutylene copolymer, styrene acrylate copolymer, etc. Examples of the elastomer having a styrene skeleton include rubber polymers such as butadiene rubber, styrene-butadiene rubber (SBR), ethylene-vinyl acetate copolymer (EVA), isoprene rubber, and acrylonitrile rubber. An organic acid can also be added for the purpose of removing the oxide film of the solder during mounting.

  Further, the viscosity at 120 ° C. of the sheet-shaped resin composition 16 is preferably 100 to 10,000 Pa · s, and more preferably 500 to 3000 Pa · s. When the viscosity is 100 Pa · s or more, the surface shape can be prevented from being greatly deformed during thermosetting. Moreover, by setting it as 10,000 Pa * s or less, it can suppress that the fluidity | liquidity of resin worsens and it becomes impossible to fully fill the end surface of components.

  Although the thickness (total thickness in the case of a multilayer) of the sheet-like resin composition 16 is not particularly limited, it is preferably 100 μm or more and 1000 μm or less in consideration of the strength and fillability of the cured resin. The thickness of the sheet-shaped resin composition 16 can be appropriately set in consideration of the width of the gap between the chip 20 and the mounting substrate 22.

  The sheet-shaped resin composition 16 is produced as follows, for example. First, a resin composition solution that is a material for forming the sheet-shaped resin composition 16 is prepared. As described above, the resin composition solution contains the resin composition, filler, and other various additives.

  Next, the resin composition solution is applied onto the base separator so as to have a predetermined thickness to form a coating film, and then the coating film is dried under predetermined conditions to form a sheet-shaped resin composition 16. It does not specifically limit as a coating method, For example, roll coating, screen coating, gravure coating, etc. are mentioned. As drying conditions, for example, the drying temperature is 70 to 160 ° C. and the drying time is 1 to 5 minutes.

(Method for producing dicing tape-integrated sheet-shaped resin composition)
The dicing tape-integrated sheet-shaped resin composition 14 according to the present embodiment is obtained by bonding the dicing tape 15 and the sheet-shaped resin composition 16 together. Bonding can be performed by, for example, pressure bonding. At this time, the lamination temperature is not particularly limited, and is preferably 30 to 50 ° C., for example, and more preferably 35 to 45 ° C. Moreover, a linear pressure is not specifically limited, For example, 0.1-20 kgf / cm is preferable and 1-10 kgf / cm is more preferable. Moreover, it can obtain also by apply | coating the resin composition solution for forming the sheet-like resin composition 16 directly on the dicing tape 15, and making it dry.

[Attaching process]
Next, in the sticking step (step C), the other surface 11b of the wafer with support 10 is stuck on the sheet-like resin composition 16 of the dicing tape-integrated sheet-like resin composition 14 (see FIG. 3). Bonding can be performed by, for example, pressure bonding. At this time, the laminating temperature is not particularly limited, and is preferably 20 to 120 ° C, and more preferably 40 to 100 ° C. Moreover, a pressure is not specifically limited, For example, 0.05-1.0 MPa is preferable and 0.1-0.8 MPa is more preferable. Bonding is preferably performed under reduced pressure. When performed under reduced pressure, the generation of voids at the interface between the wafer 11 and the sheet-like resin composition 16 can be suppressed, and the wafer 11 and the sheet-like resin composition 16 can be bonded together more suitably. As decompression conditions, 5-1000 Pa is preferable and 10-500 Pa is more preferable. When performing this process C on pressure reduction conditions, it can carry out in a pressure reduction chamber, for example.

[Adhesive application process]
Next, in the adhesive application process (process D), the adhesive 18 is applied to the portion where the sheet-shaped resin composition 16 is exposed (see FIG. 4). The adhesive is preferably applied to the entire portion where the sheet-shaped resin composition 16 is exposed, but the present invention is not limited to this example, and the portion where the sheet-shaped resin composition 16 is exposed. What is necessary is just to apply | coat to at least one part of. This is because if the adhesive 18 is applied to at least a part of the portion where the sheet-shaped resin composition 16 is exposed, the solvent can be made difficult to contact the sheet-shaped resin composition 16. The adhesive 18 may be applied so as to cover not only the portion where the sheet-shaped resin composition 16 is exposed but also the dicing tape 15.

(adhesive)
The constituent material of the adhesive 18 is preferably one that is difficult to dissolve by the solvent used in the step E (support peeling step) described later. Examples of the constituent material for forming such an adhesive 18 include an acrylic resin, a silicone resin, a metal, and an inorganic substance. As the acrylic resin and the silicone resin, for example, the same adhesive layer as that constituting the dicing tape 15 can be used.

[Support peeling process]
Next, in a support peeling process (process E), the temporary fixing layer 13 is dissolved with a solvent, and the support 12 is peeled from the wafer 11 (see FIG. 5). At this time, a force may be applied in a direction in which the support 12 is sucked and separated from the wafer 11. When the forming material for forming the temporary fixing layer 13 is a polyimide resin, the solvent is N, N-dimethylacetamide (DMAc), N-methyl-2-pyrrolidone (NMP), N, N-dimethyl. Formamide (DMF) or the like is preferably used. Further, when the forming material for forming the temporary fixing layer 13 is a silicone resin, it is preferable to use toluene, methylene chloride, trichloroethane, or the like as the solvent. When the forming material for forming the temporary fixing layer 13 is an aliphatic olefin resin, it is preferable to use toluene, ethyl acetate or the like as the solvent. When the forming material for forming the temporary fixing layer 13 is a hydrogenated styrene thermoplastic elastomer, it is preferable to use toluene, ethyl acetate or the like as the solvent. Moreover, when the forming material for forming the temporary fixing layer 13 is an acrylic resin, it is preferable to use acetone, methyl ketyl ketone, methanol, toluene, ethyl acetate, or the like as the solvent. In the present embodiment, it is preferable that the temporary fixing layer 13 is dissolved by a solvent while the sheet-like resin composition 16 is hardly dissolved by the solvent. As a suitable combination of the material, the solvent and the material of the sheet-like resin composition 16, the temporary fixing layer 13 includes a polyimide resin as the temporary fixing layer 13, NMP as the solvent, and an epoxy resin as the sheet-like resin composition 16. Or an aliphatic olefin resin as the temporary fixing layer 13, toluene as the solvent, and an epoxy resin as the sheet-shaped resin composition 16. In the present embodiment, it is preferable that the temporary fixing layer 13 is dissolved by a solvent while the sheet-like resin composition 16 and the adhesive 18 are hardly dissolved by the solvent. As a suitable combination of the material of the temporary fixing layer 13, the solvent, the material of the sheet-like resin composition 16, and the material of the adhesive 18, polyimide resin as the temporary fixing layer 13, NMP as the solvent, and sheet-like resin Combination of epoxy resin as composition 16, acrylic resin as adhesive 18, aliphatic olefin resin as temporary fixing layer 13, toluene as solvent, epoxy resin as sheet-shaped resin composition 16, and combination of polyimide resin as adhesive 18 Etc.

[Dicing process]
Next, in the dicing step (step F), the wafer 11 is diced together with the sheet-shaped resin composition 16 to obtain the chip 20 with the sheet-shaped resin composition 16 (see FIG. 6). For the dicing, conventionally known blade dicing or laser dicing can be employed.

[Underfill process]
Next, in the underfill process (process G), the chip 20 with the sheet-shaped resin composition 16 is disposed on the mounting substrate 22, and an electrode (not shown) included in the chip 20 and an electrode included in the mounting substrate 22 (see FIG. (Not shown) is bonded via a pump 21 formed on the electrode of the chip 20 and the gap between the chip 20 and the mounting substrate 22 is sealed (underfilled) with the sheet-like composition 16 ( (See FIG. 7). Specifically, first, the sheet-shaped resin composition 16 of the chip 20 with the sheet-shaped resin composition 16 is arranged to face the mounting substrate 22, and then, using a flip chip bonder, the sheet-shaped resin composition 16 is arranged. This can be done by applying pressure from the attached tip 20 side. As a result, the electrode of the chip 20 and the electrode of the mounting substrate 22 are joined via the bump 21 formed on the electrode of the chip 20, and the gap between the chip 20 and the mounting substrate 22 becomes a sheet. The composition 16 is sealed (underfilled). The bonding temperature is preferably 50 to 300 ° C, more preferably 100 to 280 ° C. The bonding pressure is preferably 0.02 to 10 MPa, more preferably 0.05 to 5 MPa.

  As described above, according to the manufacturing method of the semiconductor device according to the present embodiment, the chip 20 on which the through electrode is formed is mounted on the mounting substrate 22, and the gap between the chip 20 and the mounting substrate 22 is a sheet-like composition. A semiconductor device sealed with the object 16 can be obtained. According to the method for manufacturing a semiconductor device according to the present embodiment, since the adhesive 18 is applied to the portion where the sheet-shaped resin composition 16 is exposed, the temporary fixing layer 16 is dissolved with a solvent, and the support 12 Is peeled off from the wafer 11, it becomes difficult for the solvent to contact the sheet-like resin composition 16. As a result, it can suppress that the sheet-like resin composition 16 melt | dissolves. Further, as described above, since the dissolution of the sheet-shaped resin composition 16 is suppressed, the sheet-shaped resin composition 16 in the chip 20 with the sheet-shaped resin composition 16 obtained by the process F includes the chip 20 and the mounting substrate. Thus, it functions sufficiently as a sheet-shaped resin composition for sealing the gap with the resin 22. Further, since the dissolution of the sheet-shaped resin composition 16 is suppressed, the yield of the semiconductor device obtained by the process G (the semiconductor device in which the gap between the chip and the mounting substrate is sealed with the sheet-shaped composition) is improved. Can be made.

  In the above-described embodiment, the case where the adhesive 18 is not peeled has been described. However, the present invention is not limited to this example, and the adhesive may be peeled after step E (support peeling step) (for example, after step E and before the dicing step). When the adhesive is peeled after the step E (support peeling step), it is excellent in that the contamination of the semiconductor element by the adhesive can be suppressed as compared with the case where the adhesive is not peeled. The adhesive may be peeled off by physically cutting the adhesive with a cutter or the like, or by using a solvent for dissolving the adhesive that can dissolve the adhesive.

  Hereinafter, preferred embodiments of the present invention will be described in detail by way of example. However, the materials, blending amounts, and the like described in this example are not intended to limit the gist of the present invention only to those unless otherwise limited. The term “parts” means parts by weight.

Example 1
<Preparation of sheet-shaped resin composition>
The following (a) to (g) were dissolved in methyl ethyl ketone to obtain a resin composition solution having a solid content concentration of 23.6% by weight.
(A) Acrylic acid ester-based polymer mainly composed of ethyl acrylate-methyl methacrylate (trade name “Paracron W-197CM”, manufactured by Negami Kogyo Co., Ltd.): 100 parts (b) Epoxy resin 1 (trade name “Epicoat 1004” ”, Manufactured by JER Corporation): 56 parts (c) Epoxy resin 2 (trade name“ Epicoat 828 ”, manufactured by JER Corporation): 19 parts (d) phenol resin (trade name“ Millex XLC-4L ”, Mitsui Chemicals, Inc.) (Made by company): 75 parts (e) spherical silica (trade name “SO-25R”, manufactured by Admatechs Co., Ltd.): 167 parts (f) organic acid (trade name “orthoanisic acid”, manufactured by Tokyo Chemical Industry Co., Ltd.): 1 .3 parts (g) imidazole catalyst (trade name “2PHZ-PW”, manufactured by Shikoku Kasei Co., Ltd.): 1.3 parts

  This resin composition solution was applied on a release film (release liner) made of a polyethylene terephthalate film having a thickness of 50 μm after the silicone release treatment, and then dried at 130 ° C. for 2 minutes. As a result, a circular sheet-shaped resin composition A having a thickness of 20 μm and a diameter of 230 mm was produced.

<Production of dicing tape>
First, an experimental apparatus for polymerization equipped with a 1 L round bottom separable flask, a separable cover, a separatory funnel, a thermometer, a nitrogen inlet tube, a Liebig condenser, a vacuum seal, a stirring rod, and a stirring blade was prepared.
Next, 50 parts of 2-methoxyethyl acrylate (product name: Acrix C-1, manufactured by Toa Gosei Co., Ltd.), 35 parts of acryloylmorpholine (product name: ACMO, manufactured by Kojin Co., Ltd.), 2-hydroxyethyl acrylate (product name) : Acrix βHEA, manufactured by Toa Gosei Co., Ltd.) 15 parts, and 2,2′-azobis-isobutyronitrile (produced by Kishida Chemical Co., Ltd.) as a thermal polymerization initiator was 0.2 % By weight (that is, 0.2 parts) was charged into the polymerization experimental apparatus so that the total amount of monomers was 20% by weight of the solution in ethyl acetate as a solvent. Then, it stirred for 1 hour, nitrogen-substituting at normal temperature (23 degreeC).
Next, stirring was performed for 10 hours while controlling the solution temperature in the polymerization experimental apparatus to be 60 ° C. ± 2 ° C. with a water bath under inflow of nitrogen to obtain an intermediate polymer solution. During the polymerization of the intermediate polymer, ethyl acetate was added dropwise to control the temperature during the polymerization and to prevent a sudden increase in viscosity (for example, an increase in viscosity due to hydrogen bonding caused by polar groups in the monomer side chain). Was performed as appropriate.
Next, the intermediate polymer solution is cooled to room temperature (23 ° C.), and then 16 parts by weight of 2-isocyanatoethyl methacrylate (Karenz MOI; manufactured by Showa Denko KK), dibutyltin dilaurate IV (Wako Pure Chemical Industries, Ltd.) 0.1 parts by weight) was added.
Next, the mixture was stirred for 24 hours while maintaining at 50 ° C. in an air atmosphere to obtain a final polymer solution.
In the final polymer solution, 30 parts by weight of dipentaerythritol hexaacrylate (KAYARAD DPHA; manufactured by Nippon Kayaku Co., Ltd.) with respect to 100 parts by weight of the solid content in the final polymer solution, 1-hydroxycyclohexylphenyl as a photopolymerization initiator 3 parts by weight of ketone (Irgacure 184; manufactured by Ciba Specialty Chemicals) and 3 parts by weight of polyisocyanate crosslinking agent (Coronate L; manufactured by Nippon Polyurethane) were mixed and stirred uniformly to obtain an adhesive solution. It was.
The obtained pressure-sensitive adhesive solution was applied to the release-treated surface of the PET film subjected to the silicone-based mold release treatment using an applicator, and then dried for 2 minutes in a 120 ° C. dryer, and the pressure-sensitive adhesive layer A having a thickness of 30 μm. Got.
Next, a linear low density polyethylene resin (product name: Novatec LD, manufactured by Nippon Polyethylene Co., Ltd.) was formed by T-die extrusion. The thickness of this linear low density polyethylene resin layer was 100 μm. Next, one side of the linear low-density polyethylene resin layer was subjected to corona treatment, and the pressure-sensitive adhesive layer A was bonded to the corona-treated surface using a hand roller. Then, it was allowed to stand for 72 hours at 50 ° C. to obtain a dicing tape A according to this example.
<Preparation of dicing tape integrated sheet-shaped resin composition>
The sheet-shaped resin composition A was bonded onto the pressure-sensitive adhesive layer A of the dicing tape A using a hand roller to prepare a dicing tape-integrated sheet-shaped resin composition A.

<Preparation of temporary fixing layer>
In an atmosphere under a nitrogen stream, 29.5 g of polyetherdiamine (manufactured by Heinzmann, D-4000, molecular weight: 4023.5), 2528.0 g of N, N-dimethylacetamide (DMAc), 4,4′- 90.3 g of diaminodiphenyl ether (DDE, molecular weight: 200.2) and 100.0 g of pyromellitic dianhydride (PMDA, molecular weight: 218.1) are mixed and reacted at 70 ° C. to obtain a polyamic acid solution A. It was. After cooling to room temperature (23 ° C.), the polyamic acid solution A was applied onto the separator and dried at 90 ° C. for 3 minutes to obtain a temporary fixing layer A having a thickness of 100 μm.

<Adjustment of adhesive solution>
An adhesive layer solution B (polyamide acid solution B) was obtained in the same manner as the temporary fixing layer A solution (polyamide acid solution A) except that the composition according to Table 1 was followed. The obtained adhesive layer solution was cooled to room temperature (23 ° C.).

[Process evaluation]
The temporary fixing layer A was attached to a silicon wafer having a diameter of 195 mm and a thickness of 725 μm. The pasting was performed by roll lamination at a temperature of 90 ° C. and a pressure of 0.1 MPa. After pasting, the temporary fixing layer A was imidized in a nitrogen atmosphere at 300 ° C. for 1.5 hours.
A pedestal (a silicon wafer having a diameter of 200 mm and a thickness of 726 μm) as a support was attached to the other surface of the temporary fixing layer A to which the silicon wafer was attached. Pasting was performed at a temperature of 120 ° C. and a pressure of 0.3 MPa.
Next, an adhesive layer solution B was applied between the temporary fixing layer A and the bevel portion of the pedestal and dried to form an adhesive layer B. Thereby, the temporary fix | stop layer A was fixed to the base.
Thus, a stacked body in which the pedestal, the temporary fixing layer A, and the silicon wafer were sequentially stacked was obtained.
Backgrinding was performed using the obtained laminate until the wafer thickness reached 50 μm. Next, the obtained ground laminate was laminated on the dicing tape-integrated sheet-shaped resin composition A under conditions of 80 ° C., 0.2 MPa, and 10 mm / s. At this time, the wafer fixing jig was simultaneously laminated on the dicing tape-integrated sheet-shaped resin composition A.
Next, the same pressure-sensitive adhesive solution (adhesive) as that used for the production of the pressure-sensitive adhesive layer A was applied to the exposed part of the sheet-shaped resin composition A, and dried at 100 ° C. for 3 minutes.
Next, the pedestal was put down and the adhesive layer A was immersed in the NMP solution for 30 seconds and taken out. The base is peeled off using tweezers, and the obtained silicon wafer with the dicing tape-integrated sheet-shaped resin composition A is used as a base material for the dicing tape-integrated sheet-shaped resin composition A (linear low-density polyethylene resin layer). Observed from the side, the case where the NMP solution had invaded the adhesive layer B was indicated as x, and the case where it did not enter was indicated as ◯. The results are shown in Table 2.

(Comparative Example 1)
In the same manner as in Example 1, except that the same pressure-sensitive adhesive solution (adhesive) as that used for preparing the pressure-sensitive adhesive layer A was not applied to the exposed portion of the sheet-shaped resin composition A. Evaluation was performed. In addition, since the diameter of a silicon wafer is 230 mm, in the comparative example 1, the sheet-like resin composition protrudes from the silicon wafer in planar view. The results are shown in Table 2.

DESCRIPTION OF SYMBOLS 10 Wafer with support 11 Wafer 11a One surface 11b (of wafer 11) The other surface 12 (of wafer 11) 12 Support 13 Temporary fixing layer 14 Dicing tape integrated sheet-like resin composition 15 Dicing tape 16 Sheet-like resin composition Item 18 Adhesive 20 Chip 22 Mounting Substrate

Claims (6)

Preparing a wafer with a support in which the support is bonded to one surface of the wafer on which the through electrode is formed via a temporary fixing layer; and
Preparing a dicing tape-integrated sheet-shaped resin composition in which the sheet-shaped resin composition is formed on the dicing tape; and
A process C for affixing the other surface of the wafer with the support to the sheet-shaped resin composition of the dicing tape-integrated sheet-shaped resin composition;
After the step C, a step D for applying an adhesive to a portion where the sheet-shaped resin composition is exposed;
And a step E of dissolving the temporary fixing layer with the solvent and peeling the support from the wafer.   2. The method of manufacturing a semiconductor device according to claim 1, further comprising a step F of dicing the wafer together with the sheet-shaped resin composition after the step E to obtain a chip with the sheet-shaped resin composition. .   After the step F, the chip with the sheet-shaped resin composition is arranged on a mounting substrate, and the electrode of the chip and the electrode of the mounting substrate are joined, and the chip and the mounting substrate The method for manufacturing a semiconductor device according to claim 2, further comprising a step G of sealing the gap with the sheet-like composition.   The method of manufacturing a semiconductor device according to claim 1, wherein the step C is performed under reduced pressure.   The sheet-like resin composition used in the manufacturing method of the semiconductor device of any one of Claims 1-4.   A dicing tape-integrated sheet-shaped resin composition used in the method for manufacturing a semiconductor device according to claim 1.

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