[go: up one dir, main page]

JP2014150201A - Bonding method of substrate and semiconductor substrate, and balloon experimental substrate depressing device used therefor - Google Patents

Bonding method of substrate and semiconductor substrate, and balloon experimental substrate depressing device used therefor Download PDF

Info

Publication number
JP2014150201A
JP2014150201A JP2013019051A JP2013019051A JP2014150201A JP 2014150201 A JP2014150201 A JP 2014150201A JP 2013019051 A JP2013019051 A JP 2013019051A JP 2013019051 A JP2013019051 A JP 2013019051A JP 2014150201 A JP2014150201 A JP 2014150201A
Authority
JP
Japan
Prior art keywords
substrate
substrates
bonded
film
water
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2013019051A
Other languages
Japanese (ja)
Inventor
Atsunobu Une
篤暢 宇根
Eiichi Yamamoto
栄一 山本
Takahiko Mitsui
貴彦 三井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Okamoto Machine Tool Works Ltd
Original Assignee
Okamoto Machine Tool Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Okamoto Machine Tool Works Ltd filed Critical Okamoto Machine Tool Works Ltd
Priority to JP2013019051A priority Critical patent/JP2014150201A/en
Publication of JP2014150201A publication Critical patent/JP2014150201A/en
Pending legal-status Critical Current

Links

Images

Landscapes

  • Mechanical Treatment Of Semiconductor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

PROBLEM TO BE SOLVED: To manufacture a bonding substrate which does not cause displacement between substrates when performing a grinding process on a laminated substrate obtained by bonding two substrates with a water film.SOLUTION: A bonding method of a substrate wand a substrate wcomprises: depressing a top face of a bonded substrate w in which two substrates w, wwhich are fixed to ceramic chucks are bonded by water, with a flexible rubber film 19 of a balloon experimental substrate depressing device 1 which is provided above the bonded substrate and had a flexible rubber film 19 as a substrate holding surface and which can move upward and downward in a vertical direction thereby discharging excess water from between the substrates and adjusting a surface tension of a water film wto be a value which does not cause displacement between the substrates.

Description

本発明は、2枚の基板を水膜で接合して貼り合わせ、この貼り合わせ基板の裏面を研削(研磨も含む)して基板の厚みを薄くした後、貼り合わせ基板を貼り合わせ面より分離して2枚の基板として回収するに用いる2枚の基板の貼り合わせ方法、および、その方法の実施に用いる風船膨張型基板押圧装置に関する。   In the present invention, two substrates are bonded and bonded together with a water film, the back surface of the bonded substrate is ground (including polishing) to reduce the thickness of the substrate, and then the bonded substrate is separated from the bonded surface. In addition, the present invention relates to a method for bonding two substrates used for recovery as two substrates, and a balloon inflatable substrate pressing device used for carrying out the method.

2枚の基板を貼り合わせ、貼り合わせ基板の裏面または表裏両面を研削(研磨も含む)して基板の厚みを薄くした後、貼り合せ基板を貼り合わせ面より分離して2枚の基板として回収する方法は知られている。例えば、特開平6−762号公報(特許文献1)は半導体基板、誘電体基板、ガラス基板等の基板2枚を水槽中の水中で平行にして接触させ、さらに押し付けて貼り合わせ面の余分な水分を排除して両者基板の接合を水の表面張力で強固にした後、この貼り合せ基板を水槽より取り出し、両面研磨装置のキャリア内に挿入した後、貼り合わせ基板の表裏面を研磨し、研磨終了後、再び水槽内の水中に研磨加工貼り合わせ基板を投入して前記表面張力を低下させ、再び、両者基板を平行にずらして2枚の研磨加工基板に分離する方法を開示する。   After bonding the two substrates and grinding the back and front and back surfaces of the bonded substrate (including polishing) to reduce the thickness of the substrate, the bonded substrate is separated from the bonded surface and recovered as two substrates. How to do is known. For example, Japanese Patent Laid-Open No. 6-762 (Patent Document 1) discloses that two substrates such as a semiconductor substrate, a dielectric substrate, and a glass substrate are brought into parallel contact with each other in water in a water tank, and are further pressed to provide an extra bonding surface. After removing moisture and strengthening the bonding of both substrates with the surface tension of water, this bonded substrate is taken out of the water tank and inserted into the carrier of the double-side polishing apparatus, and then the front and back surfaces of the bonded substrate are polished. After polishing, a method is disclosed in which the bonded substrate for polishing is again put into the water in the water tank to reduce the surface tension, and the two substrates are shifted in parallel and separated into two polishing substrates.

また、シリコン基盤の表面に配線プリントが施された半導体基板の配線プリント面をテンプレート基板(ベアシリコン基板、ガラス基板、サファイア基板、エンジニアプラスチック基板など)に水溶性接着剤層または加熱発泡型接着剤層を介して貼り合わせ、この貼り合わせ基板をバキュームチャック上に固定した後、枚葉の研削盤(研磨盤も含む)の工具(カップホイール型砥石、研磨パッド)を用いて半導体基板のシリコン基盤面の厚みを薄くする平坦化加工を行った後、平坦化加工された貼り合せ基板を水中に投入し、前記水溶性接着剤を水で溶解させて薄肉化された半導体基板とダミー基板に分離する、もしくは、平坦化加工された貼り合わせ基板を加熱または電子線照射して加熱発泡型接着剤を熱分解させて薄肉化された半導体基板とテンプレート基板に分離することも半導体基板加工メーカーでは実施されている。   In addition, the wiring printed surface of a semiconductor substrate with a printed wiring surface on the surface of a silicon substrate is applied to a template substrate (bare silicon substrate, glass substrate, sapphire substrate, engineer plastic substrate, etc.) as a water-soluble adhesive layer or a heating foam adhesive. After laminating through the layers, this bonded substrate is fixed on the vacuum chuck, and then the silicon substrate of the semiconductor substrate using a tool (cup wheel type grindstone, polishing pad) of a single wafer grinder (including a grinder) After flattening processing to reduce the thickness of the surface, the flattened bonded substrate is poured into water, and the water-soluble adhesive is dissolved in water to separate the thinned semiconductor substrate and dummy substrate Or a thinned semiconductor substrate by heating or flattening the bonded substrate to heat or irradiate the electron beam to thermally decompose the foamed adhesive. Being implemented in a semiconductor substrate processing manufacturers also be separated in the template substrate and.

一方、可撓性ゴム膜を基板保持面とする上下方向に昇降可能な風船膨張型基板キャリアまたは基板保持用の搬送パッドも実用化されている。例えば、前者については、特開2001−105305号公報(特許文献2)は、回転する駆動軸に軸承された定盤に貼付されている研磨布表面に、キャリアに保持された基板を研磨布上方より押し当てて基板と研磨布を擦動させて基板の表面を研磨する研磨装置の基板キャリアヘッド構造であって、前記キャリアヘッド構造は中空スピンドル軸に軸承されたお椀状主体部、該お椀状主体部の下端部に水平方向に固定された可撓性材よりなるダイヤフラム、該ダイヤフラムに固定された中央部に鉛直方向に気体通路が設けられ、下面の前記気体通路部に通じて形成された凹部を有する剛体製支持板、前記気体通路の気体を給排出できる手段、お椀状主体部の内側とダイヤフラムの上面側とで形成される加圧室に気体を供給する手段、該剛体製支持板の下面に可撓性膜を該剛体製支持板と該可撓性膜で隙間が0.1〜0.3mmの機密性の高い空間が形成されるように可撓性膜を取り付けた基板キャリア部、該可撓性膜の下面よりは突出して前記剛体製支持板の下部外周縁に取り付けられた環状保持リング、および、前記環状保持リングの側壁と該可撓性膜の下面とで形成された基板収納ポケット部、とを備えることを特徴とする、研磨装置における基板キャリアのヘッド構造が開示される。また、特願2012−263954号明細書(特許文献3)は、ポリオルガノシロキサン系シリコーン樹脂密着層(191)の背面に弾性樹脂発泡体シート中間層(192)を、その弾性樹脂発泡体シート中間層の背面に可撓性ゴム膜基材層(193)を接着した円盤状
可撓性積層体(19)を用い、この円盤状可撓性積層体のポリオルガノシロキサン系シリコーン樹脂密着層(191)の基板を保持する円形領域(191a)と円環状保持リングを接着する円環状ポリオルガノシロキサン系シリコーン樹脂密着層領域(191b)に2分割する溝幅0.5〜2mmの環状溝(191c)をポリオルガノシロキサン系シリコーン樹脂密着層(191)および弾性樹脂発泡体シート中間層(192)に設けた円盤状可撓性積層体(19)の前記円環状ポリオルガノシロキサン系シリコーン樹脂密着層領域(191b)に円環状保持リング(22)を接着したバッキング材であって、前記ポリオルガノシロキサン系シリコーン樹脂円形密着層(191a)で基板キャリア領域部(4)を形成し、前記環状保持リング(22)の内側側壁と前記ポリオルガノシロキサン系シリコーン樹脂円形密着層(191a)下面とで形成される空間で基板収納ポケット部(4a)を形成したバッキング材であり、前記円盤状可撓性積層体(19)のポリオルガノシロキサン系シリコーン樹脂密着層(191a,191b)がこのポリオルガノシロキサン系シリコーン樹脂円形密着層(191a)に貼着される基板表面とポリオルガノシロキサン系シリコーン樹脂密着層との剥離力(JIS K−6854に準拠)が10mN/12.7
mm幅以下で、前記ポリオルガノシロキサン系シリコーン樹脂円形密着層(191a)表面から基板を平行にずらす剪断力が1.0N/cm以上であるポリオルガノシロキサン系シリコーン樹脂密着層(191)である、ことを特徴とする研磨装置のキャリアヘッド構造用バッキング材(BM)、および、それを用いた基板のキャリアヘッド構造を開示する(図2参照)。
On the other hand, a balloon-expandable substrate carrier or a transport pad for holding a substrate that can be moved up and down using a flexible rubber film as a substrate holding surface has been put into practical use. For example, as for the former, Japanese Patent Laid-Open No. 2001-105305 (Patent Document 2) discloses that a substrate held by a carrier is placed on a polishing cloth surface affixed to a surface plate supported by a rotating drive shaft. A substrate carrier head structure of a polishing apparatus that polishes the surface of a substrate by further pressing and rubbing the substrate and a polishing cloth, wherein the carrier head structure is a bowl-shaped main body supported by a hollow spindle shaft, A diaphragm made of a flexible material fixed in the horizontal direction at the lower end of the main body, a gas passage in the vertical direction is provided in the center fixed to the diaphragm, and formed through the gas passage on the lower surface. A rigid support plate having a recess, means for supplying and discharging the gas in the gas passage, means for supplying gas to a pressurizing chamber formed by the inside of the bowl-shaped main body and the upper surface side of the diaphragm, the rigid body A flexible membrane was attached to the lower surface of the holding plate so that a highly confidential space with a clearance of 0.1 to 0.3 mm was formed between the rigid support plate and the flexible membrane. A substrate carrier part, an annular holding ring that protrudes from the lower surface of the flexible film and is attached to the lower outer periphery of the rigid support plate; and a side wall of the annular holding ring and the lower surface of the flexible film. There is disclosed a head structure of a substrate carrier in a polishing apparatus, comprising a formed substrate storage pocket portion. In addition, Japanese Patent Application No. 2012-263594 (Patent Document 3) discloses an elastic resin foam sheet intermediate layer (192) on the back surface of a polyorganosiloxane-based silicone resin adhesive layer (191), and an elastic resin foam sheet intermediate. A disc-shaped flexible laminate (19) having a flexible rubber film substrate layer (193) bonded to the back surface of the layer is used, and a polyorganosiloxane-based silicone resin adhesion layer (191) of the disc-shaped flexible laminate is used. The annular groove (191c) having a groove width of 0.5 to 2 mm which is divided into a circular area (191a) for holding the substrate and an annular polyorganosiloxane silicone resin adhesion layer area (191b) for adhering the annular holding ring. Of the disc-shaped flexible laminate (19) provided with the polyorganosiloxane-based silicone resin adhesion layer (191) and the elastic resin foam sheet intermediate layer (192). A backing material in which an annular retaining ring (22) is bonded to a cyclic polyorganosiloxane-based silicone resin adhesion layer region (191b), wherein the polyorganosiloxane-based silicone resin circular adhesion layer (191a) has a substrate carrier region portion (4). A backing material in which a substrate storage pocket portion (4a) is formed in a space formed by the inner side wall of the annular retaining ring (22) and the lower surface of the polyorganosiloxane-based silicone resin circular adhesion layer (191a). The disc-shaped flexible laminate (19) has a polyorganosiloxane-based silicone resin adhesion layer (191a, 191b) adhered to the polyorganosiloxane-based silicone resin circular adhesion layer (191a) and a poly surface. Peel strength with organosiloxane silicone resin adhesion layer (JIS K-6854 Compliant) is 10mN / 12.7
It is a polyorganosiloxane silicone resin adhesion layer (191) having a width of mm or less and a shear force of 1.0 N / cm 2 or more for shifting the substrate in parallel from the surface of the polyorganosiloxane silicone resin circular adhesion layer (191a). A backing material (BM) for a carrier head structure of a polishing apparatus and a carrier head structure of a substrate using the same are disclosed (see FIG. 2).

後者については、特開2012−204709号公報(特許文献4)が、柄の長手方向部分に流体通路3bを有する非通気性素材よりなる剛体製アーム3に下面が断面円弧状凹部を有するとともに、流体通路孔を備える非通気性素材よりなる剛体製ワッフルスラブ構造のパッド保持基板2を軸承し、このパッド保持基板の環状下面に接着剤Sを介して可撓性ゴム膜19a表面に密着層19bが形成された積層構造の基板保持用パッド19を前記可撓性ゴム膜面が接着側となるように貼付して、前記パッド保持基板下面の断面円弧状凹部2cを流体室に形成し、この流体室に面する前記パッド保持基板の流体通路孔に前記剛体製アームの柄3に設けた流体通路3bが連通しており、この流体室により供給された加圧流体により前記積層構造の基板保持用パッド19が膨張し、この流体室より流体を排出することにより前記基板保持用パッドが原型復帰できる構造とした半導体基板搬送用の基板保持用パッドを備えたアーム構造であり、基板保持用パッドの可撓性ゴム膜表面に形成された前記密着層19bは、ポリオルガノシロキサン系シリコーン樹脂層、アクリル系樹脂粘着剤層、および、合成ゴム系粘着剤層より選ばれた密着層で形成され、この密着層と半導体基板間の剥離力(JIS K−6854に準拠)が10mN/12.7mm幅以下
で、半導体基板を保持する前記基板保持用パッドを加工ステージより半導体基板と共に平行にずらす剪断力が1.0N/cm以上であることを特徴とする、基板保持用パッドを備えたアーム構造1を開示する(図1参照)。
For the latter, Japanese Patent Application Laid-Open No. 2012-204709 (Patent Document 4) discloses that the lower surface of the rigid arm 3 made of a non-breathable material having a fluid passage 3b in the longitudinal direction portion of the handle has a circular arc-shaped recess. A pad holding substrate 2 having a rigid waffle slab structure made of a non-breathable material having a fluid passage hole is supported, and an adhesive layer 19b is formed on the surface of the flexible rubber film 19a via an adhesive S on an annular lower surface of the pad holding substrate. A substrate holding pad 19 having a laminated structure in which the surface of the flexible rubber film is attached so that the surface of the flexible rubber film is on the adhesive side, and a cross-sectional arc-shaped recess 2c on the lower surface of the pad holding substrate is formed in the fluid chamber. A fluid passage 3b provided in the handle 3 of the rigid arm communicates with a fluid passage hole of the pad holding substrate facing the fluid chamber, and a base of the laminated structure is provided by pressurized fluid supplied from the fluid chamber. The holding pad 19 expands and discharges fluid from the fluid chamber, so that the substrate holding pad can be restored to its original shape. The arm structure includes a substrate holding pad for transporting a semiconductor substrate. The adhesion layer 19b formed on the surface of the flexible rubber film of the pad is formed of an adhesion layer selected from a polyorganosiloxane silicone resin layer, an acrylic resin adhesive layer, and a synthetic rubber adhesive layer. The shearing force that the peeling force (conforming to JIS K-6854) between the adhesion layer and the semiconductor substrate is 10 mN / 12.7 mm width or less, and the substrate holding pad holding the semiconductor substrate is shifted in parallel with the semiconductor substrate from the processing stage. Disclosed is an arm structure 1 having a substrate holding pad, wherein the force is 1.0 N / cm 2 or more (see FIG. 1).

特開平6−762号公報JP-A-6-762 特開2001−105305号公報JP 2001-105305 A 特願2012−263954号明細書Japanese Patent Application No. 2012-263594 特開2012−204709号公報JP 2012-204709 A

上記特許文献1記載の基板の貼り合わせ方法は、接着剤として安価な純水を用いる環境に優しい利点を有するが、基板同士を貼り合わせる作業が手作業であるゆえ、形成される水膜の厚み(水の表面張力)の設定が困難であり、半導体基板の種類によっては水膜に気
泡が混在した不連続の水膜となり、あるいは、連続水膜の厚みが大きく基板間の水膜の表面張力が小さく、次工程の貼り合わせ基板の研削(研磨)加工中に上側の半導体基板がずれてしまう問題が生じることが見出された。
The method for bonding substrates described in Patent Document 1 has an environmentally friendly advantage of using inexpensive pure water as an adhesive, but since the operation of bonding substrates together is a manual operation, the thickness of the water film to be formed (Water surface tension) is difficult to set, and depending on the type of semiconductor substrate, it becomes a discontinuous water film in which bubbles are mixed in the water film, or the surface tension of the water film between the substrates is large because the continuous water film is thick. It has been found that there is a problem that the upper semiconductor substrate is displaced during the grinding (polishing) processing of the bonded substrate in the next process.

後者の水溶性接着剤層または加熱発泡型接着剤層を介してダミーウエハを貼り合せる方法は、接着剤が純水より高価である欠点と、接着剤残滓が半導体基板面に残り、薄肉化加工し、2枚の基板に分離した後、半導体基板の洗浄を実施して前記残滓を半導体基板面より取り除く工程が必要となる。   The latter method of bonding a dummy wafer through a water-soluble adhesive layer or a heat-foaming adhesive layer has the disadvantage that the adhesive is more expensive than pure water, and the adhesive residue remains on the semiconductor substrate surface, resulting in thinning processing. After separating into two substrates, a step of cleaning the semiconductor substrate and removing the residue from the semiconductor substrate surface is required.

本発明者らは、基板同士の貼り合わせに水の表面張力を利用する特許文献1記載の方法を利用し、基板間の水膜の表面張力の強度を設定するために貼り合わせ基板の上面を押圧して過剰な水を押し出して水膜の表面張力を2枚の基板が強固に貼り合わす強度に設定する際に前記特許文献2、特許文献3記載の可撓性ゴム膜を基板保持面とする上下方向に昇降可能な風船膨張型基板キャリアまたは特許文献4記載の基板保持用の搬送パッドを貼り合わせ基板の押圧装置として用い、この押圧装置に供給する空気圧を水膜の表面張力設定のパラメーターとして用いれば、予め、貼り合わせ基板の上側の基板に負荷させる空気圧を種々変えて貼り合わせ基板の研削時に基板同士がずれない空気圧の閾値を確認しておき、水膜で貼り合わされた基板の押圧時にこの閾値内の圧空を押圧装置に供給することにより、次工程における貼り合わせ基板の枚葉研削(研磨)加工時の基板のずれが防止できると着想した。   In order to set the strength of the surface tension of the water film between the substrates, the present inventors use the method described in Patent Document 1 that utilizes the surface tension of water for bonding the substrates together. When the excessive water is pressed and the surface tension of the water film is set to a strength at which the two substrates are firmly bonded together, the flexible rubber film described in Patent Document 2 and Patent Document 3 is used as the substrate holding surface. A balloon inflatable substrate carrier that can be moved up and down or a substrate holding transfer pad described in Patent Document 4 is used as a bonding substrate pressing device, and the air pressure supplied to the pressing device is a parameter for setting the surface tension of the water film. As a precondition, the air pressure applied to the upper substrate of the bonded substrate is changed in various ways to check the air pressure threshold at which the substrates do not shift when grinding the bonded substrate, and the substrate bonded with the water film is checked. By supplying the compressed air within the threshold to the pressing device in pressure time, single wafer grinding (polishing) of the bonded substrate in the next step displacement of the substrate during processing it is conceived to be able to prevent.

請求項1の発明は、作業テーブル上に固定した基板と半導体基板とが水膜により接合された貼り合わせ基板の上面を、この貼り合わせ基板の上方に設けられた可撓性ゴム膜を基板保持面とする上下方向に昇降可能な風船膨張型基板押圧装置の可撓性ゴム膜により押圧し、過剰な水を基板間から排出して基板間の水膜の表面張力を基板同士のずれを生じさせない値に調整する基板と半導体基板との貼り合わせ方法であって、
前記風船膨張型基板押圧装置の可撓性ゴム膜を加圧空気で予め膨張させてから下降させて貼り合わせ基板の上面に接触させ、さらに前記可撓性ゴム膜の下降を続行して可撓性ゴム膜の全面が前記貼り合わせ基板上面の全面に接触したら予め設定した閾値内の圧力の加圧空気を風船膨張型基板押圧装置に供給して過剰の水を基板間から排出させることを終えることを特徴とする、基板と半導体基板との貼り合わせ方法を提供するものである。
According to the first aspect of the present invention, the upper surface of the bonded substrate in which the substrate fixed on the work table and the semiconductor substrate are bonded together by the water film is held on the flexible rubber film provided above the bonded substrate. Pressing with a flexible rubber film of a balloon inflatable substrate pressing device that can move up and down in the vertical direction, excess water is discharged from between the substrates, causing the surface tension of the water film between the substrates to shift between the substrates A method for bonding a substrate and a semiconductor substrate to be adjusted to a value not to
The flexible rubber film of the balloon inflatable substrate pressing device is pre-expanded with pressurized air and then lowered to contact the upper surface of the bonded substrate, and the flexible rubber film is further lowered to be flexible. When the entire surface of the adhesive rubber film comes into contact with the entire upper surface of the bonded substrate, the pressurized air having a pressure within a preset threshold is supplied to the balloon inflatable substrate pressing device to finish discharging excess water from between the substrates. The present invention provides a method for bonding a substrate and a semiconductor substrate.

請求項2の発明は、請求項1記載の風船膨張型基板押圧装置において、基板保持用パッドの可撓性ゴム膜表面にポリオルガノシロキサン系シリコーン樹脂層、アクリル系樹脂粘着剤層、および、合成ゴム系粘着剤層より選れた密着層が形成され、この密着層と貼り合わせ基板間の剥離力(JIS K−6854に準拠)が10mN/12.7mm幅以下で、貼り合わせ基板を保持する前記基板保持用パッドを基板貼り合わせ加工ステージより貼り合わせ基板と共に平行にずらす剪断力が1.0N/cm以上であることを特徴とする、風船膨張型基板押圧装置を提供するものである。 According to a second aspect of the present invention, in the balloon inflatable substrate pressing device according to the first aspect, a polyorganosiloxane-based silicone resin layer, an acrylic resin pressure-sensitive adhesive layer, and a synthetic material are formed on the surface of the flexible rubber film of the substrate holding pad. An adhesion layer selected from the rubber-based adhesive layer is formed, and the peeling force between the adhesion layer and the bonded substrate (conforming to JIS K-6854) is 10 mN / 12.7 mm or less, and the bonded substrate is held. The present invention provides a balloon inflatable substrate pressing device, wherein a shearing force for shifting the substrate holding pad in parallel with the bonded substrate from the substrate bonding processing stage is 1.0 N / cm 2 or more.

基板間の連続した水膜の表面張力を風船膨張型基板押圧装置に供給する空気圧の調整で行うので、基板の種類が変わっても基板間の水膜の表面張力を研削加工時に一方の基板がずれない表面張力に設定することができる。また、過剰の水を水膜より基板間から排出させて水膜の厚みを0.5〜2.5mm厚みとする際、風船膨張型基板押圧装置の可撓性ゴム膜を加圧空気で予め膨張させてから下降させて貼り合わせ基板の上面に接触させ、さらに前記可撓性ゴム膜の下降を続行して可撓性ゴム膜全面が前記貼り合わせ基板上面の全面に接触したら予め設定した閾値内の圧力の加圧空気を風船膨張型基板押圧装置に供給して過剰の水を基板間から排出させるので水膜に空気泡留りが生じることはない。   Since the surface tension of the continuous water film between the substrates is adjusted by adjusting the air pressure supplied to the balloon inflatable substrate pressing device, the surface tension of the water film between the substrates can be reduced during grinding even if the type of substrate changes. The surface tension can be set so as not to deviate. In addition, when excessive water is discharged from the water film between the substrates to make the thickness of the water film 0.5 to 2.5 mm, the flexible rubber film of the balloon inflatable substrate pressing device is previously pressurized with pressurized air. Threshold value that is set in advance when the lower surface of the bonded substrate is brought into contact with the upper surface of the bonded substrate, and the lower surface of the flexible rubber film is further lowered so that the entire surface of the flexible rubber film contacts the entire upper surface of the bonded substrate. Since the pressurized air at the internal pressure is supplied to the balloon inflatable substrate pressing device and excess water is discharged from between the substrates, no air bubbles remain in the water film.

風船膨張型基板押圧装置の可撓性ゴム膜表面に形成された密着層は、常温で固体状態であり、粘着力が極めて小さい(剥離力は10mN/12.7mm幅以下である)ので、貼り合わせ基板の上面に密着層残滓が残ることはない。また、水膜の表面張力が調整された貼り合わせ基板を次工程の研削加工ステージへ搬送する際に、貼り合わせ基板が前記密着層から脱落することもない。研削加工ステージのワークチャックテーブルに搬送された貼り合わせ基板は、基板保持用パッドの可撓性ゴム膜を上昇させつつ加圧空気を供給して可撓性ゴム膜を膨張させることにより前記基板保持用パッドより離れるので、風船膨張型基板押圧装置は基板搬送用器具としても利用できる。   The adhesion layer formed on the surface of the flexible rubber film of the balloon inflatable substrate pressing device is in a solid state at room temperature and has a very low adhesive force (peeling force is 10 mN / 12.7 mm width or less). The adhesive layer residue does not remain on the upper surface of the laminated substrate. Further, when the bonded substrate with the surface tension of the water film adjusted is transported to the grinding process stage of the next process, the bonded substrate does not fall off from the adhesion layer. The bonded substrate transported to the work chuck table of the grinding stage is held on the substrate by inflating the flexible rubber film by supplying pressurized air while raising the flexible rubber film of the substrate holding pad. The balloon inflatable substrate pressing device can also be used as a substrate transfer device because it is away from the pad.

図1は風船膨張型基板押圧装置を用いて基板間の水膜の表面張力を調整する工程図である。FIG. 1 is a process diagram for adjusting the surface tension of a water film between substrates using a balloon inflatable substrate pressing device. 図2は特願2012−263954号明細書に記載された風船膨張型基板キャリア構造の正面断面図である。FIG. 2 is a front sectional view of a balloon inflatable substrate carrier structure described in Japanese Patent Application No. 2012-263594.

図1に示されるように、基板保持用のパッドを備えた風船膨張型基板押圧装置1は、柄3aの長手方向部分に流体通路3bを有する非通気性素材よりなる剛体製アーム3に下面が断面円弧状凹部2aを有するとともに、流体通路孔2bを備える非通気性素材よりなる剛体製ワッフルスラブ構造のパッド保持基板2を軸承し、このパッド保持基板の環状下面に接着剤Sを介して可撓性ゴム膜19a表面に密着層19bが形成された積層構造の基板保持用パッド19を前記可撓性ゴム膜面が接着側となるように接着剤Sで貼付して、前記パッド保持基板下面の断面円弧状凹部を流体室2cに形成し、この流体室2cに面する前記パッド保持基板の流体通路孔2bに前記剛体製アームの柄3aに設けた流体通路3bが連通している。   As shown in FIG. 1, a balloon inflatable substrate pressing apparatus 1 having a substrate holding pad has a lower surface on a rigid arm 3 made of a non-breathable material having a fluid passage 3b in a longitudinal direction portion of a handle 3a. A pad holding substrate 2 having a rigid waffle slab structure made of a non-breathable material having a circular arc-shaped recess 2a and having a fluid passage hole 2b is supported, and an adhesive S is attached to the annular lower surface of the pad holding substrate. A substrate holding pad 19 having a laminated structure in which an adhesive layer 19b is formed on the surface of the flexible rubber film 19a is attached with an adhesive S so that the surface of the flexible rubber film is on the bonding side, and the lower surface of the pad holding substrate Is formed in the fluid chamber 2c, and the fluid passage 3b provided in the handle 3a of the rigid arm communicates with the fluid passage hole 2b of the pad holding substrate facing the fluid chamber 2c.

水膜により貼り合わせ基板wは、第一加工ステージ(ポーラスセラミックチャックテーブル)上に載置される。貼り合わせ基板間の水膜wは、
(i).特許文献1記載のように基板2枚を水槽中の水中で平行にして接触させ、さらに押し付けて貼り合わせ面の余分な水分を排除して両者基板の接合を水の表面張力で強固にした後、この貼り合せ基板を水槽より取り出して形成してもよい。また、(ii).第一加工ステージ上に載置された第一基板wの上面にロールコーターまたはダイコーター、あるいは、スプレーコ―ターを用いて純水を塗布し、次いで、この塗布面に第二基板wである半導体基板を重ね合わせて水膜wを形成させてもよい。あるいは、(iii).基板収納カセット内に収納されている第一基板wを第一加工ステージ上に搬送する途中に設けられたスポンジロールコーターに第一基板wを接触させることにより水膜wを形成させ、これを半導体基板と接合させてもよい。さらに、恒温多湿室(絶対湿度は80%以上)内に第一基板wと第二基板wを保管して湿気を両者基板の表面に付着させた後、両者基板を重ね合わせ、然る後に恒温多湿室外へ運び出し、冷気に曝すことにより両者基板間に水膜を形成させてもよい。
The bonded substrate w is placed on the first processing stage (porous ceramic chuck table) by the water film. The water film w m between the bonded substrates is
(I). After the two substrates are brought into parallel contact with each other in the water in the water tank as described in Patent Document 1 and further pressed to eliminate excess moisture on the bonding surface, the bonding between the two substrates is strengthened by the surface tension of the water. The bonded substrate may be formed by removing it from the water tank. (Ii). Upper surface roll coater or die coater first substrate w b placed on the first processing stage or, Supureko - coater coating pure water using, then this coated surface in a second substrate w a The water film w m may be formed by overlapping a certain semiconductor substrate. Or (iii). A water film w m is formed by bringing the first substrate w b into contact with a sponge roll coater provided in the middle of transporting the first substrate w b stored in the substrate storage cassette onto the first processing stage, This may be bonded to a semiconductor substrate. Further, after the first substrate w b and the second substrate w a are stored in a constant temperature and high humidity chamber (absolute humidity is 80% or more) and moisture is attached to the surfaces of both substrates, the two substrates are overlapped. A water film may be formed between the substrates by carrying it out of the constant temperature and humidity chamber and exposing it to cold air.

前記風船膨張型基板押圧装置1の密着層19bを表面に形成された可撓性ゴム膜19aよりなる基板保持用パッド19の裏面側の前記流体室2cに加圧流体(好ましくは空気)を供給して前記基板保持用パッド19を膨張させつつ、前記基板保持用パッド19を下降させ(図1b参照)、貼り合わせ基板wの上面に接触させる。   Supply pressurized fluid (preferably air) to the fluid chamber 2c on the back side of the substrate holding pad 19 made of a flexible rubber film 19a formed on the surface of the adhesion layer 19b of the balloon inflatable substrate pressing device 1. Then, while the substrate holding pad 19 is expanded, the substrate holding pad 19 is lowered (see FIG. 1b) and brought into contact with the upper surface of the bonded substrate w.

さらに、前記基板保持用パッド19の下降を続行して可撓性ゴム膜19a表面に形成された密着層19bの全面が前記貼り合わせ基板w上面の全面に接触したら予め設定した閾値内の圧力の加圧空気を風船膨張型基板押圧装置1の前記流体室2cに供給して水膜中の
過剰な水を基板間から排出させることを終える(図1c参照)。
Further, when the substrate holding pad 19 continues to descend and the entire surface of the adhesion layer 19b formed on the surface of the flexible rubber film 19a comes into contact with the entire upper surface of the bonded substrate w, the pressure within a preset threshold value is reached. The pressurized air is supplied to the fluid chamber 2c of the balloon inflatable substrate pressing device 1 to finish discharging excess water in the water film from between the substrates (see FIG. 1c).

上記基板保持用パッド19の裏面側の前記流体室2cに加圧流体(好ましくは空気)を供給して前記基板保持用パッド19を膨張させる流体圧力は、後段の閾値内の圧力の加圧空気の圧力と同じであっても、小さい流体圧力であってもよい。流体は、空気、窒素ガス、炭酸ガス、アルゴンガス、ヘリウムガスのいずれでもよいが、空気が安価で環境に優しい。   The fluid pressure for supplying the pressurized fluid (preferably air) to the fluid chamber 2c on the back side of the substrate holding pad 19 to expand the substrate holding pad 19 is a pressurized air having a pressure within the threshold value of the latter stage. The pressure may be the same as or less than the fluid pressure. The fluid may be any of air, nitrogen gas, carbon dioxide gas, argon gas, and helium gas, but air is inexpensive and environmentally friendly.

上記流体室2cに供給する加圧流体の圧力の閾値は、後述する実施例と同じく、予め流体室2cに供給する加圧流体の圧力を種々変えて基板間の水膜の過剰水を除く実験を行い、貼り合わせ基板を研削(研磨)加工して基板w,w間のずれを生じることがない貼り合わせ基板w製造時の加圧流体の圧力閾値内から選択する。圧力閾値は基板の種類、重量によりことなるが、通常は10〜40Paの圧力である。 The pressure threshold value of the pressurized fluid supplied to the fluid chamber 2c is an experiment for removing excess water in the water film between the substrates by variously changing the pressure of the pressurized fluid supplied to the fluid chamber 2c in advance, as in the examples described later. Then, the bonded substrate is ground (polished) and selected from the pressure threshold value of the pressurized fluid at the time of manufacturing the bonded substrate w that does not cause a shift between the substrates w a and w b . The pressure threshold varies depending on the type and weight of the substrate, but is usually a pressure of 10 to 40 Pa.

基板保持用パッドの可撓性ゴム19a膜素材としては、ゴム物質、ゴム物質と熱可塑性エラストマーもしくは粘着性を有する熱可塑性樹脂の混合物が挙げられる。   Examples of the film material of the flexible rubber 19a for the substrate holding pad include a rubber substance, a mixture of the rubber substance and a thermoplastic elastomer or an adhesive thermoplastic resin.

ゴム物質としては、ブチルゴム、クロロプレンゴム、シリコーンゴム、エチレン・プロピレン・エチリデンノルボルネン共重合体ゴム、エチレン・プロピレン・ブタジエン共重合体ゴム、エチレン・プロピレン共重合体ゴム、ブロム化スチレン・ブタジエン・スチレンブロック共重合体ゴム、クロル化スチレン・ブタジエン・スチレンブロック共重合体ゴム、ブロム化スチレン・ブタジエン・スチレンブロック共重合体ゴムの水素添加物、ブタジエン・アクリロニトリル共重合体ゴムの水素添加物、クロル化スチレン・ブタジエン・スチレンブロック共重合体ゴムの水素添加物、ブロム化スチレン・イソプレン・スチレンブロック共重合体ゴム、クロル化スチレン・イソプレン・スチレンブロック共重合体ゴム、ブロム化スチレン・イソプレン・スチレンブロック共重合体ゴムの水素添加物、クロル化スチレン・イソプレン・スチレンブロック共重合体ゴムの水素添加物、フッ化ビニリデン・エチレン共重合体ゴム等が挙げられる。これらは架橋されていてもよい。   Rubber materials include butyl rubber, chloroprene rubber, silicone rubber, ethylene / propylene / ethylidene norbornene copolymer rubber, ethylene / propylene / butadiene copolymer rubber, ethylene / propylene copolymer rubber, brominated styrene / butadiene / styrene block. Copolymer rubber, Chlorinated styrene / butadiene / styrene block copolymer rubber, Hydrogenated bromostyrene / butadiene / styrene block copolymer rubber, Hydrogenated butadiene / acrylonitrile copolymer rubber, Chlorinated styrene -Hydrogenated butadiene / styrene block copolymer rubber, brominated styrene / isoprene / styrene block copolymer rubber, chlorinated styrene / isoprene / styrene block copolymer rubber, brominated styrene / isopre · Styrene block copolymer hydrogenated product of the rubber, chlorinated styrene-isoprene-styrene block copolymer hydrogenation product of rubber, vinylidene fluoride-ethylene copolymer rubber. These may be cross-linked.

熱可塑性エラストマーまたは粘着性を有する熱可塑性樹脂としては、エチレン・酢酸ビニル共重合体、軟質ポリ塩化ビニル、塩素化ポリエチレン、クロロ・スルホン化ポリエチレン、エチレン・アクリル酸共重合体、エチレン・アクリル酸メチル共重合体、エチレン・アクリル酸エチル共重合体、エチレン・アクリル酸メチル・2−エチルヘキシルアクリレート共重合体等が挙げられる。   Examples of thermoplastic elastomers or adhesive thermoplastic resins include ethylene / vinyl acetate copolymer, soft polyvinyl chloride, chlorinated polyethylene, chloro / sulfonated polyethylene, ethylene / acrylic acid copolymer, and ethylene / methyl acrylate. Examples include copolymers, ethylene / ethyl acrylate copolymers, ethylene / methyl acrylate / 2-ethylhexyl acrylate copolymers, and the like.

混合物の場合、ゴム物質は両者中の10〜97重量%、好ましくは30〜85重量%、熱可塑性エラストマーまたは熱可塑性樹脂は90〜3重量%、好ましくは70〜15重量%の割合で用いられる。ゴム物質は、可撓性ゴム膜の延展性と、伸びに対する戻りの目的で、熱可塑性エラストマーまたは熱可塑性樹脂は、可撓性ゴム膜の強度、硬度、耐熱性向上の目的で使用される。ゴム物質、エラストマー、樹脂を含有する膜のマトリックス成分が常温(10〜30℃)で基板に対し、粘着性を示さないときは、プロセスオイル、石油樹脂、水素添加ヒマシ油、エポキシ化大豆油、アビエチン酸ロジン、ミルセン・マレイン化物、テルペン・フェノール共重合体などの粘着付与物質を、膜のマトリックス成分のゴム物質、熱可塑性エラストマー、熱可塑性樹脂の合計量100重量部に対し、1〜10重量部を含有させる。   In the case of a mixture, the rubber substance is used in a proportion of 10 to 97% by weight, preferably 30 to 85% by weight, and the thermoplastic elastomer or thermoplastic resin in a proportion of 90 to 3% by weight, preferably 70 to 15% by weight. . The rubber material is used for the purpose of spreading the flexible rubber film and returning to the elongation, and the thermoplastic elastomer or the thermoplastic resin is used for the purpose of improving the strength, hardness and heat resistance of the flexible rubber film. When the matrix component of the film containing the rubber substance, elastomer, and resin does not show adhesiveness to the substrate at room temperature (10 to 30 ° C.), process oil, petroleum resin, hydrogenated castor oil, epoxidized soybean oil, 1 to 10 weights of a tackifier such as rosin abietic acid, myrcene / maleinized product, terpene / phenol copolymer, etc. with respect to 100 parts by weight of the total amount of rubber material, thermoplastic elastomer, and thermoplastic resin of the matrix component of the film Part.

可撓性ゴム膜19aの物性としては、硬さ(JIS K−6301)が10〜100、
好ましくは35〜85、引張強度(JIS K−6301)が30〜200kgf/cm2、好ましくは50〜150kgf/cm2、引張伸度(JIS K−6301)が50〜1000%、200〜800%、厚み0.03〜3mm、好ましくは、0.05〜1.5m
mである。
As the physical properties of the flexible rubber film 19a, the hardness (JIS K-6301) is 10 to 100,
Preferably 35 to 85, tensile strength (JIS K-6301) is 30 to 200 kgf / cm 2 , preferably 50 to 150 kgf / cm 2 , tensile elongation (JIS K-6301) is 50 to 1000%, 200 to 800% , Thickness 0.03 to 3 mm, preferably 0.05 to 1.5 m
m.

半導体基板と直接接触する前記密着層19bは、ポリオルガノシロキサン系シリコーン樹脂層、アクリル系樹脂粘着剤層、および、合成ゴム系粘着剤層より選らばれた密着層で形成され、この密着層と半導体基板間の剥離力(JIS K−6854に準拠)が10mN/12.7mm幅以下で、半導体基板を保持する前記基板保持用パッドを加工ステージより半導体基板と共に平行にずらす剪断力が1.0N/cm以上である。 The adhesion layer 19b in direct contact with the semiconductor substrate is formed of an adhesion layer selected from a polyorganosiloxane-based silicone resin layer, an acrylic resin adhesive layer, and a synthetic rubber-based adhesive layer. The peeling force between the substrates (conforming to JIS K-6854) is 10 mN / 12.7 mm or less, and the shearing force for shifting the substrate holding pad holding the semiconductor substrate in parallel with the semiconductor substrate from the processing stage is 1.0 N / cm 2 or more.

密着層19bの厚みは、5〜100μm、好ましくは5〜30μmである。前記可撓性ゴム膜19aとの接着力が50gf/25mm幅以下より低いときは、接着剤、粘着剤、または、プライマーの0.5〜10μm層を可撓性ゴム膜19a上に設けてから密着層形成液状塗工剤を塗布し、乾燥させて密着層19bを形成させる。   The thickness of the adhesion layer 19b is 5 to 100 μm, preferably 5 to 30 μm. When the adhesive force with the flexible rubber film 19a is lower than 50 gf / 25 mm width or less, a 0.5 to 10 μm layer of adhesive, pressure-sensitive adhesive, or primer is provided on the flexible rubber film 19a. An adhesion layer forming liquid coating agent is applied and dried to form the adhesion layer 19b.

前記密着層19bは、市場で販売されている剥離紙/粘着剤層/ベースフィルム/密着層19b/剥離紙積層体よりなる両面固定シート、例えば、フジコピアン株式会社からFIXFILM(商品名)シリーズのSTD1,STD2,HG1,HG2(密着層片面)グレード名で、HGW1,HGW2(密着層両面)、あるいは丸石産業株式会社より販売されている“Q-Chuck”シリーズ(商品名)の剥離紙/ポリオルガノシロキサン系
シリコーン樹脂粘着剤層、合成ゴム系粘着剤層またはアクリル系粘着剤層/ベースフィルム/密着層19b/剥離紙積層体もしくは剥離紙/ポリオルガノシロキサン系シリコーン樹脂粘着剤層、合成ゴム系粘着剤層またはアクリル系粘着剤層/密着層19b/剥離紙積層体を購入し、剥離紙を引き剥がしてから用いてもよい。
The adhesive layer 19b is a double-sided fixed sheet made of a release paper / adhesive layer / base film / adhesive layer 19b / release paper laminate sold on the market, for example, STD1 of FIXFILM (trade name) series from Fujikopian Corporation. , STD2, HG1, HG2 (adhesion layer single side) grade name, HGW1, HGW2 (adhesion layer both sides), or “Q-Chuck” series (trade name) release paper / polyorgano sold by Maruishi Sangyo Co., Ltd. Siloxane silicone resin adhesive layer, synthetic rubber adhesive layer or acrylic adhesive layer / base film / adhesion layer 19b / release paper laminate or release paper / polyorganosiloxane silicone resin adhesive layer, synthetic rubber adhesive Purchase the adhesive layer or acrylic adhesive layer / adhesion layer 19b / release paper laminate and peel the release paper It may be used after that.

密着層19b素材としては、前述のゴム物質、熱可塑性エラストマー、熱可塑性樹脂等の素材の外に、ポリオルガノシロキサン系シリコーン樹脂層、重合ロジンエステル含有アクリル系樹脂粘着剤層、および、液状エポキシ樹脂ゴム、液状ブタジエンゴム、シリコーンゴム等の液状ゴムに石油樹脂、テルペン・フェノール共重合体、アロオシメン・テルペン・フェノール共重合体、マレイン酸変性アロオシメンの水素添加物、マレイン酸変性ミルセンの水素添加物、エチレン・酢酸ビニル共重合体等の粘着剤およびポリ(四フッ化エチレン)、メラミン、イソシアヌル酸、メラミンイソシアヌレート複塩、タルク等の滑剤、炭酸カルシウムやカオリンクレイなどの充填剤を配合して粘着力を低下させた合成ゴム系粘着剤層より選らばれた密着層が使用できる。滑剤や充填剤の配合量、用いるアクリレートモノマーの種類およびその共重合モル比の調整により被保持材(半導体基板)との剥離力の値を調整できる。   As the material for the adhesion layer 19b, in addition to the materials such as the rubber materials, thermoplastic elastomers, and thermoplastic resins described above, a polyorganosiloxane-based silicone resin layer, a polymerized rosin ester-containing acrylic resin pressure-sensitive adhesive layer, and a liquid epoxy resin Petroleum resin, terpene / phenol copolymer, alloocimene / terpene / phenol copolymer, hydrogenated maleic acid modified alloocimene, maleic acid modified myrcene hydrogenated product, liquid rubber such as rubber, liquid butadiene rubber and silicone rubber Adhesives such as adhesives such as ethylene / vinyl acetate copolymer and lubricants such as poly (tetrafluoroethylene), melamine, isocyanuric acid, melamine isocyanurate double salt, talc, and fillers such as calcium carbonate and kaolin clay Adhesion selected from a synthetic rubber adhesive layer with reduced strength There can be used. By adjusting the blending amount of the lubricant or filler, the type of acrylate monomer to be used, and the copolymerization molar ratio, the value of the peeling force from the held material (semiconductor substrate) can be adjusted.

密着層のポリオルガノシロキサン系シリコーン樹脂素材としては、両末端にのみビニル基を有する直鎖状ポリオルガノシロキサンからなるシリコーンと、両末端及び側鎖にビニル基を有する直鎖状ポリオルガノシロキサンからなるシリコーンと、末端にのみビニル基を有する分岐上ポリオルガノシロキサンからなるシリコーンと、末端及び側鎖にビニル基を有する分岐上ポリオルガノシロキサンからなるシリコーンとから選ばれる少なくとも1種のシリコーンを共重合および架橋させて得たポリオルガノシロキサン系シリコーン樹脂が利用できる。   The polyorganosiloxane-based silicone resin material for the adhesion layer is composed of a silicone composed of linear polyorganosiloxane having vinyl groups only at both ends and a linear polyorganosiloxane having vinyl groups at both ends and side chains. Copolymerizing at least one silicone selected from silicone, a silicone composed of a branched polyorganosiloxane having a vinyl group only at the terminal, and a silicone composed of a branched polyorganosiloxane having a vinyl group at the terminal and side chains; A polyorganosiloxane-based silicone resin obtained by crosslinking can be used.

架橋剤としては、オルガノハイドロジエンポリシロキサンが好ましい。   As the cross-linking agent, organohydropolyene polysiloxane is preferred.

架橋促進剤としては、3−メチル−1−ブテン−3−オールが好ましい。   As the crosslinking accelerator, 3-methyl-1-buten-3-ol is preferable.

架橋反応に用いる白金系触媒としては、塩化第一白金酸、塩化第二白金酸などの塩化白金酸、塩化白金酸のアルコール化合物、アルデヒド化合物あるいは塩化白金酸と各種オレフィンとの鎖塩などがあげられる。架橋反応して得たポリオルガノシロキサン系シリコー
ン樹脂は、シリコーンゲルのような柔軟性を持ったものとなり、この柔軟性が被着体である貼り合わせ基板wとの密着を容易にさせる。
Examples of platinum-based catalysts used for the crosslinking reaction include chloroplatinic acid such as chloroplatinic acid and chloroplatinic acid, alcohol compounds of chloroplatinic acid, aldehyde compounds, and chain salts of chloroplatinic acid and various olefins. It is done. The polyorganosiloxane-based silicone resin obtained by the crosslinking reaction has a flexibility such as a silicone gel, and this flexibility makes it easy to adhere to the bonded substrate w as the adherend.

このポリオルガノシロキサン系シリコーン樹脂から形成される密着層の硬度は、アスカーFP硬度25以上で、アスカーCSC2硬度で80以下である。   The adhesion layer formed from this polyorganosiloxane-based silicone resin has an Asker FP hardness of 25 or more and an Asker CSC2 hardness of 80 or less.

前記剛体製アーム3、柄3aの素材としては、アルミニウム、ポリアセタール樹脂、ガラス繊維補強エポキシ樹脂、PEEK等が軽量であるので適切である。   As the material for the rigid arm 3 and the handle 3a, aluminum, polyacetal resin, glass fiber reinforced epoxy resin, PEEK and the like are suitable because they are lightweight.

被保持材である基板wとしては、テンプレート基板(ベアシリコーン基板、ガラス基板、窒化珪素基板、炭化珪素基板、サファイア基板、セラミックチャック基板、真鍮製チャック基板、ポリカーボネート樹脂基板など)、表面に配線プリントが施された半導体基板等が挙げられる。半導体基板wとしては、半導体基板、TSV基板、SOI基板、センサー基板、インクジェット電子配線基板、太陽光電池用基板等が挙げられる The substrate w a is the holding material, the template substrate (bare silicon substrate, a glass substrate, silicon nitride substrate, silicon carbide substrate, a sapphire substrate, a ceramic chuck substrate, brass chuck substrate, polycarbonate resin substrate, etc.), wiring on the surface Examples thereof include a semiconductor substrate on which printing has been performed. As the semiconductor substrate w b, a semiconductor substrate, TSV substrate, SOI substrate, the sensor substrate, the inkjet electronic wiring substrate, solar cell substrates, and the like

実施例1
直径320mm、厚み2mmのガラス基板(w)と、775μm厚みのシリコン基盤表面にプリント配線を施した直径300mmの半導体基板(w)2枚を水槽中の水中で平行にして接触させ、さらに押し付けて水膜(w)で接合された貼合基板(w)を得た。
Example 1
A glass substrate (w a ) having a diameter of 320 mm and a thickness of 2 mm, and two semiconductor substrates (w b ) having a diameter of 775 μm and a silicon substrate surface with a printed wiring provided on a surface of 300 mm in diameter are brought into contact in parallel in water in a water bath, and A bonded substrate (w) bonded with a water film (w m ) by pressing was obtained.

ついで、この貼合基板wを図1aに示す第一加工ステージ(作業テーブルであるポーラスセラミックチャックテーブル)上に載置させた。   Next, the bonded substrate w was placed on the first processing stage (a porous ceramic chuck table as a work table) shown in FIG. 1a.

図1aに示す風船膨張型基板押圧装置1の密着層19bを表面に形成された可撓性ゴム膜19aよりなる基板保持用パッド19の裏面側の前記流体室2cに表1に示す圧力の加圧空気を供給して前記基板保持用パッド19を膨張させつつ、前記基板保持用パッド19を下降させ(図1b参照)、貼合基板wの上面に接触させ、さらに、前記基板保持用パッド19の下降を続行して可撓性ゴム膜19a表面に形成された密着層19bの全面が前記貼合基板w上面の全面に接触したら予め設定した閾値内の圧力の加圧空気を風船膨張型基板押圧装置1の前記流体室2cに供給して過剰の水を基板間から排出させることを終えた(図1c参照)。   The pressure shown in Table 1 is applied to the fluid chamber 2c on the back side of the substrate holding pad 19 made of a flexible rubber film 19a formed on the surface of the adhesion layer 19b of the balloon inflatable substrate pressing apparatus 1 shown in FIG. 1a. While the compressed air is supplied to expand the substrate holding pad 19, the substrate holding pad 19 is lowered (see FIG. 1 b) and brought into contact with the upper surface of the bonded substrate w, and further, the substrate holding pad 19 When the entire surface of the adhesion layer 19b formed on the surface of the flexible rubber film 19a comes into contact with the entire upper surface of the bonded substrate w, pressurized air with a pressure within a preset threshold value is applied to the balloon inflatable substrate. Supplying the fluid chamber 2c of the pressing device 1 to discharge excess water from between the substrates was completed (see FIG. 1c).

得た貼合基板wの基板間に存在する水膜(w)の表面張力(剪断力)および厚みの値を表1に記載する。 Table 1 shows values of the surface tension (shearing force) and the thickness of the water film (w m ) present between the substrates of the obtained bonded substrate w.

ついで、前記基板保持用パッド19を取り付けたアーム3を上昇させた後、アーム3を水平方向にペンダント回転させ、株式会社岡本工作機械製作所製の枚葉裏面研削装置“GNX312B”(商品名)の第二加工ステージ(吸着チャックテーブル)上方へと貼合基板wを搬送し、その位置で前記基板保持用パッド19を下降しつつ膨張させて貼合基板wを基板保持用パッド19面より離して前述の吸着チャックテーブル上に固定した(図1d
参照)。
Next, after raising the arm 3 to which the substrate holding pad 19 is attached, the arm 3 is pendant-rotated in the horizontal direction, and the single wafer backside grinding apparatus “GNX312B” (trade name) manufactured by Okamoto Machine Tool Co., Ltd. The bonded substrate w is transported to the upper side of the second processing stage (adsorption chuck table), and the substrate holding pad 19 is lowered and expanded at that position to separate the bonded substrate w from the surface of the substrate holding pad 19. Fixed on the aforementioned suction chuck table (FIG. 1d).
reference).

前述の枚葉裏面研削装置を用い、直径420mmのダイヤモンドビトリファイドカップ型研削砥石を用い、吸着チャックテーブル上の貼合基板wの半導体基板wのシリコン基盤面を700μm厚み減らす研削加工を吸着チャックテーブルの回転数150rpm、カップ型研削砥石の回転数1,800rpmの条件で研削液(純水)を前記シリコン基盤面に供給しながら実施した。研削加工中に基板のずれが生じたときは、その時点で研削加工を停止した。 Using the above-described single wafer back surface grinding apparatus, a diamond vitrified cup type grinding wheel with a diameter of 420 mm is used to perform grinding processing for reducing the thickness of the silicon substrate surface of the semiconductor substrate w b of the bonded substrate w on the suction chuck table by 700 μm. This was carried out while supplying a grinding liquid (pure water) to the silicon substrate surface under the conditions of 150 rpm and 1800 rpm of the cup-type grinding wheel. When the substrate was displaced during the grinding process, the grinding process was stopped at that time.

研削加工中に基板のずれが生じたか否か表1に記載する。   Table 1 shows whether or not the substrate has been displaced during grinding.

研削加工を終えた貼合基板wを水槽中に投入し、ガラス基板wと半導体基板wの自然剥離を行い、半導体基板wを水中から取り出し、半導体基板wのシリコン基盤面の研削取り代量および表面粗さ(Ra)を測定した。結果を表1に記載する。 The bonded substrate w after finishing grinding is put into a water tank, the glass substrate w a and the semiconductor substrate w b are naturally separated, the semiconductor substrate w b is taken out of the water, and the silicon substrate surface of the semiconductor substrate w b is ground. The machining allowance and surface roughness (Ra) were measured. The results are listed in Table 1.

貼合基板wの基板間の過剰の水wを排出させる際の風船膨張型基板押圧装置の流体室2cに供給する加圧空気の圧力の閾値は、表1記載の値から10〜40Paの圧力範囲と
読み取れる。
The threshold value of the pressure of the pressurized air supplied to the fluid chamber 2c of the balloon inflatable substrate pressing device when discharging the excess water w m between the substrates of the bonded substrate w is 10 to 40 Pa from the values described in Table 1. It can be read as pressure range.

なお、上記閾値は、基板の種類、厚み、重量により異なるので、基板の種類が変わったらその都度、閾値を決定する実験を行って適正な閾値を予め把握する。   Since the threshold value varies depending on the type, thickness, and weight of the substrate, an appropriate threshold value is obtained in advance by performing an experiment for determining the threshold value each time the substrate type changes.

Figure 2014150201
Figure 2014150201

本発明の基板と半導体基板との水膜利用の貼合方法は、貼り合わせ基板wを基板保持用パッドで押して水膜から過剰の水分を除去して基板間に基板のずれが生じない水膜の剪断力とするに使用される風船膨張型基板押圧装置の流体室2cに供給する圧空の圧力を調整して行うことができる。また、研削盤等のセラミックチャック(テンプレート基板と見做す)ステージに水膜を形成し、このセラミックチャックステージと半導体基板とを貼り合わせて使用することも可能であり、バキュームチャック等を使用しないで半導体基板を前記テンプレートであるセラミックチャック上で研削加工できる。   The bonding method using a water film between a substrate and a semiconductor substrate according to the present invention is a water film in which the bonded substrate w is pushed with a substrate holding pad to remove excess moisture from the water film and the substrate does not shift between the substrates It is possible to adjust the pressure of the compressed air supplied to the fluid chamber 2c of the balloon inflatable substrate pressing device used to obtain the shearing force. It is also possible to form a water film on a ceramic chuck (assumed to be a template substrate) stage such as a grinding machine and use this ceramic chuck stage and a semiconductor substrate together, without using a vacuum chuck or the like. Thus, the semiconductor substrate can be ground on the ceramic chuck as the template.

1 基板保持用パッドを備えた風船膨張型基板押圧装置
2 パッド保持基板
2a 断面円弧状凹部
2b 流体通路孔
2c 流体室
3 剛体製アーム
3a 柄
3b 流体通路
19 基板保持用パッド
19a 可撓性ゴム膜
19b 密着層
S 接着剤
w 貼り合わせ基板
第一基板
第二基板(半導体基板)
水膜
DESCRIPTION OF SYMBOLS 1 Balloon inflatable board | substrate pressing apparatus provided with the board | substrate holding pad 2 Pad holding board | substrate 2a Cross-section circular arc-shaped recessed part 2b Fluid passage hole 2c Fluid chamber 3 Rigid arm 3a Handle 3b Fluid path 19 Substrate holding pad 19a Flexible rubber film 19b adhesion layer S adhesive w bonded substrate w a first substrate w b second substrate (semiconductor substrate)
w m water film

Claims (2)

作業テーブル上に固定した基板と半導体基板とが水膜により接合された貼り合わせ基板の上面を、この貼り合わせ基板の上方に設けられた可撓性ゴム膜を基板保持面とする上下方向に昇降可能な風船膨張型基板押圧装置の可撓性ゴム膜により押圧し、過剰な水を基板間から排出して基板間の水膜の表面張力を基板同士のずれを生じさせない値に調整する基板と半導体基板との貼り合わせ方法であって、
前記風船膨張型基板押圧装置の可撓性ゴム膜を加圧空気で予め膨張させてから下降させて貼り合わせ基板の上面に接触させ、さらに前記可撓性ゴム膜の下降を続行して可撓性ゴム膜の全面が前記貼り合わせ基板上面の全面に接触したら予め設定した閾値内の圧力の加圧空気を風船膨張型基板押圧装置に供給して過剰の水を基板間から排出させることを終えることを特徴とする、基板と半導体基板との貼り合わせ方法。
The upper surface of the bonded substrate in which the substrate fixed on the work table and the semiconductor substrate are bonded with a water film is moved up and down in the vertical direction using the flexible rubber film provided above the bonded substrate as the substrate holding surface. A substrate that is pressed by a flexible rubber film of a balloon-expandable substrate pressing device capable of discharging excess water from between the substrates and adjusting the surface tension of the water film between the substrates to a value that does not cause a shift between the substrates; A method of bonding with a semiconductor substrate,
The flexible rubber film of the balloon inflatable substrate pressing device is pre-expanded with pressurized air and then lowered to contact the upper surface of the bonded substrate, and the flexible rubber film is further lowered to be flexible. When the entire surface of the adhesive rubber film comes into contact with the entire upper surface of the bonded substrate, the pressurized air having a pressure within a preset threshold is supplied to the balloon inflatable substrate pressing device to finish discharging excess water from between the substrates. A method for bonding a substrate and a semiconductor substrate.
請求項1記載の風船膨張型基板押圧装置において、基板保持用パッドの可撓性ゴム膜表面にポリオルガノシロキサン系シリコーン樹脂層、アクリル系樹脂粘着剤層、および、合成ゴム系粘着剤層より選れた密着層が形成され、この密着層と貼り合わせ基板間の剥離力(JIS K−6854に準拠)が10mN/12.7mm幅以下で、貼り合わせ基板を保持する前記基板保持用パッドを基板貼り合わせ加工ステージより貼り合わせ基板と共に平行にずらす剪断力が1.0N/cm以上であることを特徴とする、風船膨張型基板押圧装置。 2. The balloon inflatable substrate pressing apparatus according to claim 1, wherein the flexible rubber film surface of the substrate holding pad is selected from a polyorganosiloxane silicone resin layer, an acrylic resin adhesive layer, and a synthetic rubber adhesive layer. The substrate holding pad for holding the bonded substrate is formed with a peeling force (conforming to JIS K-6854) between the adhesive layer and the bonded substrate being 10 mN / 12.7 mm or less. A balloon inflatable substrate pressing apparatus, wherein a shearing force shifted in parallel with a bonded substrate from a bonding stage is 1.0 N / cm 2 or more.
JP2013019051A 2013-02-04 2013-02-04 Bonding method of substrate and semiconductor substrate, and balloon experimental substrate depressing device used therefor Pending JP2014150201A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013019051A JP2014150201A (en) 2013-02-04 2013-02-04 Bonding method of substrate and semiconductor substrate, and balloon experimental substrate depressing device used therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013019051A JP2014150201A (en) 2013-02-04 2013-02-04 Bonding method of substrate and semiconductor substrate, and balloon experimental substrate depressing device used therefor

Publications (1)

Publication Number Publication Date
JP2014150201A true JP2014150201A (en) 2014-08-21

Family

ID=51572944

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013019051A Pending JP2014150201A (en) 2013-02-04 2013-02-04 Bonding method of substrate and semiconductor substrate, and balloon experimental substrate depressing device used therefor

Country Status (1)

Country Link
JP (1) JP2014150201A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114927431A (en) * 2022-05-05 2022-08-19 浙江同芯祺科技有限公司 Preparation method of semiconductor device based on liquid adsorption sealing
US11984328B2 (en) 2021-03-04 2024-05-14 Kioxia Corporation Semiconductor manufacturing apparatus and semiconductor manufacturing method
WO2025258483A1 (en) * 2024-06-14 2025-12-18 Tdk株式会社 Pressurizing device and pressurizing method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11984328B2 (en) 2021-03-04 2024-05-14 Kioxia Corporation Semiconductor manufacturing apparatus and semiconductor manufacturing method
CN114927431A (en) * 2022-05-05 2022-08-19 浙江同芯祺科技有限公司 Preparation method of semiconductor device based on liquid adsorption sealing
WO2025258483A1 (en) * 2024-06-14 2025-12-18 Tdk株式会社 Pressurizing device and pressurizing method

Similar Documents

Publication Publication Date Title
JP6671908B2 (en) Polishing pad
JP4716668B2 (en) Heat-peeling method for adherend and heat-peeling apparatus
JP4704017B2 (en) Heat-peeling method for adherend and heat-peeling apparatus for adherend
CN100334690C (en) Pressure-sensitive adhesive film for the surface protection of semiconductor wafers and method for protection of semiconductor wafers with the film
JP2006513573A (en) Pad construction for chemical mechanical planarization applications
JP2011000671A (en) Polishing surface plate for substrate
JP4514409B2 (en) Method for temporarily fixing semiconductor wafer, electronic component, and circuit board
JP2014150201A (en) Bonding method of substrate and semiconductor substrate, and balloon experimental substrate depressing device used therefor
JP5905698B2 (en) Polishing cushioning material
JP5291647B2 (en) Easy to replace and replace laminated polishing pad
CN108300370B (en) Temperature-sensitive adhesive sheet and method for producing wafer using the same
JP2014124718A (en) Method of manufacturing laminated abrasive pad
JP2026012034A (en) Adhesive sheet for fixing a polishing pad, adhesive sheet for fixing a polishing pad with release sheet, polishing pad with adhesive layer A, polishing pad with release sheet and adhesive layer A, method for fixing a polishing pad to a surface plate, and method for manufacturing adhesive sheet for fixing a polishing pad with release sheets FA and FB
JP2005224888A (en) Holding material of polishing workpiece
JP2012204709A (en) Semiconductor substrate holding pad, and method of transporting semiconductor substrate using the same
JP2006265410A (en) Double-sided pressure-sensitive adhesive tape for multilayer polishing pad and method for producing multilayer polishing pad
TWI811318B (en) Adhesive film and method for manufacturing electronic device
CN109952173A (en) Method for polishing semiconductor wafers on both sides
TW202033310A (en) Polishing pads and systems and methods of making and using the same
JP6032643B2 (en) Backing material and substrate carrier head structure using the same
JP5346226B2 (en) Double-sided adhesive tape for fixing abrasive and adhesive tape with abrasive
JP2011003691A (en) Pad transfer mechanism for semiconductor substrate
JP2011000670A (en) Substrate holder
JP2008098356A (en) Double-sided adhesive tape and method for producing the same
JP5132064B2 (en) Heat-peelable adhesive sheet