JP2014039016A - Semiconductor device manufacturing method and semiconductor device - Google Patents

Abstract

Provided is a method for manufacturing a semiconductor device in which a photo-curing adhesive layer can be sufficiently cured by a simple technique and good connectivity between a semiconductor element and a substrate can be obtained.
A semiconductor device manufacturing method includes arranging a semiconductor element 11 having a width of 1 mm or less on a light-transmitting substrate 13 placed on a stage 2 via a photo-curable adhesive layer 12, and applying a thermocompression head 3. A connection step of connecting the semiconductor element 11 to the light-transmitting substrate 13 by light irradiation by the pressure and light irradiation devices 4a and 4b. In the connection step, light from the light irradiation devices 4a and 4b is transmitted to the width of the semiconductor element 11. The adhesive layer 12 is cured by irradiating obliquely from above both sides of the direction. Since the width of the semiconductor element 11 is 1 mm or less, it is possible to irradiate the adhesive layer 12 with a sufficient amount of light only by light irradiation from both sides in the width direction of the semiconductor element 11. Good connectivity with the conductive substrate 13 is obtained.
[Selection] Figure 1

Description

  The present invention relates to a semiconductor device manufacturing method and a semiconductor device.

  In recent years, with the miniaturization, thinning, and high definition of electronic components such as semiconductor integrated circuits and displays, anisotropic conductive adhesives have attracted attention as connection materials for connecting electronic components and circuit systems at high density. ing. Conventional anisotropic conductive adhesives have often been used thermosetting adhesives using thermal latent polymerization initiators and epoxy resins or (meth) acrylic monomers. There was concern about deterioration and deformation of the connected body. On the other hand, in the case where a photolatent polymerization initiator is used, connection at a relatively low temperature is possible by performing light irradiation at the time of thermocompression bonding, and studies are underway.

  In a method of manufacturing a semiconductor device using an anisotropic conductive adhesive containing a photolatent polymerization initiator, for example, a photo-curing adhesive in which conductive particles obtained by performing metal plating on metal particles or plastic particles are dispersed. Used as an anisotropic conductive adhesive. And this anisotropically conductive adhesive is pinched | interposed between a semiconductor element and a board | substrate, and light irradiation is performed, pressing with a pressurization head (for example, refer patent document 1, 2). Thus, the pressurized conductive particles serve as an electrical connection medium, and electrical connection between a large number of circuits can be completed simultaneously by a simple method. Further, due to the anisotropic conductivity of the adhesive, low resistance connectivity can be obtained between connection circuits, and high insulation can be obtained between adjacent circuits.

Japanese Utility Model Publication No. 5-41091 JP-A-62-283581

  By the way, in the connection method of the semiconductor element of patent document 1 and 2 mentioned above, a light irradiation apparatus is arrange | positioned inside the stage which mounts a semiconductor element and a board | substrate, and light is irradiated with respect to an adhesive layer from the back surface side of a board | substrate. ing. In such a method, it is considered that a sufficient amount of light irradiation to the adhesive layer can be obtained, but there is a problem that the cost of remodeling the thermocompression bonding apparatus increases because the configuration of the stage becomes complicated.

  The present invention has been made in order to solve the above-mentioned problems, and a semiconductor capable of sufficiently curing a photocurable adhesive layer by a simple method and obtaining good connectivity between a semiconductor element and a substrate. An object of the present invention is to provide a device manufacturing method and a semiconductor device using the same.

  As a result of intensive studies for solving the above problems, the present inventors have conventionally studied various manufacturing methods on the premise that they can be applied to semiconductor devices of various sizes, and the restrictions have increased accordingly. We focused on the points that had been. Therefore, the present inventors, instead of that viewpoint, can conversely limit the size of the semiconductor element to be manufactured and study the manufacturing method to obtain a simpler manufacturing method suitable for the size. As a result, the present invention has been completed.

  That is, in order to solve the above-described problem, the method of manufacturing a semiconductor device according to the present invention includes a semiconductor element having a width of 1 mm or less disposed on a substrate placed on a stage via a photo-curable adhesive layer, and is applied by a crimping head. A method of manufacturing a semiconductor device comprising a connection step of connecting a semiconductor element to a substrate by light irradiation with pressure and light irradiation device, wherein light from the light irradiation device is irradiated from both sides in the width direction of the semiconductor element in the connection step By doing so, the adhesive layer is cured.

  In this method of manufacturing a semiconductor device, when a semiconductor element having a width of 1 mm or less is connected to a substrate, light is irradiated from both sides in the width direction of the semiconductor element. In this case, since the width of the semiconductor element connected to the substrate is 1 mm or less, it is possible to irradiate the adhesive layer with a sufficient amount of light by irradiating light from the light irradiation device from both sides of the semiconductor element. Good connectivity with the substrate can be obtained. That is, according to this method, it is possible to sufficiently cure the photocurable adhesive layer by a simple method, and it is possible to avoid an increase in remodeling cost of the thermocompression bonding apparatus.

  Moreover, you may make it irradiate the light from a light irradiation apparatus from the diagonal direction of the both sides of a semiconductor element. In this case, it becomes possible to further increase the amount of light applied to the adhesive layer.

  Further, the substrate may be a light transmissive substrate. In this case, since there is light propagating through the light transmissive substrate, it is possible to further increase the amount of light applied to the adhesive layer. Moreover, since it is a light-transmitting substrate, it is possible to prevent light from the light irradiation device from being blocked by the substrate.

  Further, the light irradiation devices may be provided on both sides in the width direction of the semiconductor element, and light irradiation may be performed from the light irradiation devices provided on both sides. Further, the light irradiation may be performed while rotating the light irradiation apparatus around the semiconductor element. In either case, the configuration of the thermocompression bonding apparatus can be simplified.

  Further, the light irradiation may be performed while swinging the light irradiation device with respect to the semiconductor element. In this case, since the angle of light irradiation can be varied, the amount of light irradiated to the adhesive layer can be further increased. Further, the terminal of the semiconductor element and the wiring of the substrate may be electrically connected.

  A semiconductor device according to the present invention is manufactured using the above-described method for manufacturing a semiconductor device. In this semiconductor device, the semiconductor element and the substrate are connected with sufficient connection strength. Therefore, a semiconductor device in which the connection resistance is sufficiently suppressed over a long period can be obtained.

  According to the present invention, the photocurable adhesive layer can be sufficiently cured by a simple method, and good connectivity between the semiconductor element and the substrate can be obtained.

It is a schematic diagram which shows the manufacturing method of the semiconductor device which concerns on one Embodiment of this invention. It is a schematic plan view which shows the semiconductor element used for the manufacturing method shown in FIG. It is a schematic diagram which shows the manufacturing method of the semiconductor device which concerns on the modification of this invention, (a) is the figure seen from the side surface, (b) is the figure seen from the upper surface. It is a schematic diagram which shows the manufacturing method of the semiconductor device which concerns on another modification of this invention. It is a schematic diagram which shows the manufacturing method of the semiconductor device which concerns on another modification of this invention.

  Hereinafter, preferred embodiments of a semiconductor device manufacturing method and a semiconductor device according to the present invention will be described in detail with reference to the drawings.

  FIG. 1 is a schematic view showing a method for manufacturing a semiconductor device according to an embodiment of the present invention. As shown in FIG. 1, in this method of manufacturing a semiconductor device, a semiconductor element 11 is disposed on a light-transmitting substrate 13 placed on a stage 2 via a photocurable adhesive layer 12 and heated by a thermocompression bonding head 3. A connecting step of connecting the semiconductor element 11 to the light-transmitting substrate 13 by pressurization and light irradiation by the light irradiation devices 4a and 4b is provided. Such a connection process is realized by the thermocompression bonding apparatus 1 including the stage 2, the thermocompression bonding head 3, and the light irradiation devices 4a and 4b.

  The semiconductor element 11 is, for example, various elements such as an IC chip, an LSI chip, a resistor, and a capacitor. As shown in FIG. 2A, the semiconductor element 11 has a rectangular shape having a width W of 1 mm, for example, when viewed in plan. ing. The semiconductor element 11 is not particularly limited as long as it has a width W of 1 mm or less and can be connected to the light transmissive substrate 13. For example, as shown in FIG. In this case, a square shape having a width W of 1 mm may be used. The lower limit of the width W is not particularly limited, but is about 0.3 mm. Further, the length of the semiconductor element 11 in plan view is not particularly limited, but is not less than the same length as the width W and about 40 mm.

  The light transmissive substrate 13 is a substrate having a predetermined wiring electrically connected to terminals such as bumps of the semiconductor element 11, for example. The light transmissive substrate 13 is a thin glass substrate having a thickness of 1 mm or less, for example. As the light-transmitting substrate 13, in addition to a glass substrate, a polyimide substrate, a polyethylene terephthalate substrate, a polycarbonate substrate, a polyethylene naphthalate substrate, a glass reinforced epoxy substrate, a paper phenol substrate, a ceramic substrate, a laminated plate, or the like can also be used. Among these, it is preferable to use a glass substrate, a polyethylene terephthalate substrate, a polycarbonate substrate, and a polyethylene naphthalate substrate that have excellent transparency to ultraviolet light. Note that the semiconductor device 14 may be manufactured using a substrate that does not transmit light.

  The semiconductor device 14 manufactured by this method for manufacturing a semiconductor device is not particularly limited as long as it is a device in which the semiconductor element 11 is electrically connected to the light transmissive substrate 13. For example, a liquid crystal display or an organic EL display is used. As described above, an apparatus in which the semiconductor element 11 is disposed only at the end of the light transmissive substrate 13 is also included.

The adhesive layer 12 is formed of, for example, a photocurable adhesive material containing a photolatent polymerization initiator and a polymerizable compound. Such adhesive materials include anisotropic conductive film (ACF), anisotropic conductive paste (ACP), insulating film (NCF), insulating paste (NC
P). Furthermore, it is good also as an adhesive material which can be hardened | cured with light and a heat | fever by making a thermal latent polymerization initiator and a polymeric compound contain in the said photocurable adhesive material. The adhesive layer 12 is formed, for example, so as to exhibit a surface area having approximately the same area as that of the semiconductor element 11.

  In curing the adhesive layer 12, light from the light irradiation devices 4 a and 4 b disposed obliquely above both sides of the semiconductor element 11 and the adhesive layer 12 is irradiated almost simultaneously from both sides in the width direction of the semiconductor element 11. The light irradiation devices 4a and 4b are devices that irradiate active light such as ultraviolet rays. The optical axes of the light irradiation devices 4a and 4b are arranged so as to have a predetermined angle with respect to the upper surface of the stage 2, and the light emitted from the light irradiation devices 4a and 4b is transmitted between the semiconductor element 11 and the light transmitting substrate. 13 is set so as to be incident on the end face of the adhesive layer 12 disposed between them. The light emitted from the light irradiation devices 4 a and 4 b may spread and part of the light may enter the light-transmitting substrate 13, and the light propagated through the substrate may enter the adhesive layer 12.

  The optical axes of the light irradiation devices 4a and 4b are inclined with respect to the stage 2, and the light from the light irradiation devices 4a and 4b is incident on the end face of the adhesive layer 12 and the like from obliquely above. However, the light irradiation devices 4a and 4b may be disposed directly beside the adhesive layer 12 so that the optical axes of the light irradiation devices 4a and 4b are substantially parallel to the plane of the stage 2, and light may be irradiated. Further, as shown in FIG. 4, the light irradiation devices 4a and 4b may be supported by a rocking device, and the angle between the optical axis and the stage upper surface may be changed at a predetermined cycle during the light irradiation. In FIG. 4, only the light irradiation device 4a is illustrated, but the same applies to the light irradiation device 4b.

  In the semiconductor device manufacturing method using the thermocompression bonding apparatus 1 as described above, since the width W of the semiconductor element 11 used for manufacturing is 1 mm or less, the light irradiation apparatus 4a, A sufficient amount of light can be applied to the adhesive layer 12 simply by irradiating the light from 4b, and good connectivity between the semiconductor element 11 and the light-transmitting substrate 13 can be obtained. That is, according to the manufacturing method described above, the photocurable adhesive layer 12 can be sufficiently cured by a simple method, and it is possible to avoid an increase in the cost of remodeling the thermocompression bonding apparatus.

  Further, in this semiconductor device manufacturing method, light from the light irradiation devices 4 a and 4 b is irradiated from diagonally above on both sides of the semiconductor element 11. For this reason, light can reach the inner side of the adhesive layer 12, and the amount of light irradiated on the adhesive layer 12 can be further increased.

  Further, in this semiconductor device manufacturing method, the substrate used for manufacturing is the light-transmitting substrate 13. For this reason, the amount of light applied to the adhesive layer 12 can be further increased by utilizing the light propagating through the light transmissive substrate 13. In addition, since the light-transmitting substrate 13 is used, even if light irradiation is performed obliquely from below, it is possible to prevent the light from the light irradiation devices 4a and 4b from being blocked by the substrate. In addition, when a substrate that does not transmit light is used, it is preferable to perform light irradiation obliquely from above or from the side.

  Further, in the semiconductor device 14 obtained by using this semiconductor device manufacturing method, the semiconductor element 11 and the light-transmitting substrate 13 are connected with sufficient connection strength. As a result, it is possible to obtain the semiconductor device 14 in which the connection resistance is sufficiently suppressed over a long period of time.

  The preferred embodiments of the present invention have been described in detail above. However, the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the spirit of the present invention. For example, in the above embodiment, the light irradiation devices 4 a and 4 b are provided on both sides in the width direction of the semiconductor element 11, and light from both the light irradiation devices 4 a and 4 b is irradiated from both sides in the width direction of the semiconductor element 11. However, as shown in FIG. 3, when one light irradiation device 4 is provided on one side in the width direction of the semiconductor element 11 and the light irradiation device 4 is viewed in plan, the semiconductor element 11 and the adhesive layer 12. The light irradiation may be performed while being rotated by a predetermined rotation mechanism (not shown) so that is centered. Even in this case, the light from the light irradiation device 4 can be irradiated from both sides of the semiconductor element 11 in the width direction. In addition, you may rotate the light irradiation apparatuses 4a and 4b of the structure shown in FIG. 1 like FIG.

  Moreover, in the said embodiment, although the light from light irradiation apparatus 4a, 4b injects into the end surface of the adhesive layer 12, etc. from diagonally upward, as FIG. 5 shows, light irradiation apparatus 4a, 4b The light irradiation may be performed so that the light from the light enters the end surface of the adhesive layer 12 and the like from obliquely below. In this case, the size of the stage 2 is made sufficiently small with respect to the light transmissive substrate 13, and the light irradiation devices 4 a and 4 b are arranged on both sides of the stage 2 below the upper surface of the stage 2.

  In such a semiconductor device manufacturing method, it is possible to irradiate the end face of the adhesive layer 12 with light from the light irradiation devices 4 a and 4 b through the light-transmitting substrate 13. In addition to this, it is possible to make the light from the light irradiation devices 4 a and 4 b enter from the bottom surface side of the adhesive layer 12 by swinging the light irradiation devices 4 a and 4 b to shift the optical axis. For this reason, according to the manufacturing method shown in FIG. 5, it becomes possible to irradiate the adhesive layer 12 with a sufficient amount of light, and good connectivity between the semiconductor element 11 and the light-transmitting substrate 13 can be obtained. Further, in this semiconductor device manufacturing method, the light irradiation devices 4 a and 4 b are disposed below the upper surface of the stage 2. Since the periphery of the thermocompression bonding head 3 is an area in which the device configuration is likely to be complicated, the light irradiation devices 4 a and 4 b are arranged below the upper surface of the stage 2, thereby disposing the devices around the thermocompression bonding head 3. Can be secured.

  DESCRIPTION OF SYMBOLS 2 ... Stage, 3 ... Thermocompression-bonding head, 4, 4a, 4b ... Light irradiation apparatus, 11 ... Semiconductor element, 12 ... Adhesive layer, 13 ... Light transmissive substrate, 14 ... Semiconductor device.

Claims (8)

A connecting step in which a semiconductor element having a width of 1 mm or less is disposed on a substrate placed on a stage via a photo-curable adhesive layer, and the semiconductor element is connected to the substrate by pressurization by a pressure-bonding head and light irradiation by a light irradiation device. A method for manufacturing a semiconductor device comprising:
A method of manufacturing a semiconductor device, wherein, in the connecting step, the adhesive layer is cured by irradiating light from the light irradiation device from both sides in the width direction of the semiconductor element.   The method of manufacturing a semiconductor device according to claim 1, wherein light from the light irradiation device is irradiated from an oblique direction on both sides of the semiconductor element.   The method for manufacturing a semiconductor device according to claim 1, wherein the substrate is a light-transmitting substrate.   4. The method of manufacturing a semiconductor device according to claim 1, wherein the light irradiation device is provided on each side in the width direction of the semiconductor element, and light irradiation is performed from the light irradiation device provided on both sides. 5. .   The method of manufacturing a semiconductor device according to claim 1, wherein the light irradiation is performed while rotating the light irradiation device about the semiconductor element.   The method for manufacturing a semiconductor device according to claim 1, wherein the light irradiation is performed while the light irradiation device is swung with respect to the semiconductor element.   The manufacturing method of the semiconductor device as described in any one of Claims 1-6 which electrically connects the terminal of the said semiconductor element, and the wiring of the said board | substrate.   The semiconductor device manufactured using the manufacturing method of the semiconductor device as described in any one of Claims 1-7.

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