JP2014033054A - Solid state imaging sensor and imaging apparatus - Google Patents

Abstract

In a solid-state imaging device including a microlens and a plurality of photoelectric conversion units in a unit pixel, a solid-state imaging device capable of reducing a dead zone between the photoelectric conversion units and widening an area of the photoelectric conversion unit. Realize.
In a solid-state imaging device including a micro lens and a plurality of photoelectric conversion units in a unit pixel, a plurality of photoelectric conversion units included in the first unit pixel and a second adjacent to the first unit pixel. The plurality of photoelectric conversion units included in the unit pixel are configured to share one floating diffusion unit.
[Selection] Figure 4

Description

  The present invention relates to a solid-state image sensor, and more particularly to an arrangement of elements constituting the solid-state image sensor.

  At present, various application technologies using solid-state imaging devices each including a plurality of photoelectric conversion units in a unit pixel have been proposed in imaging devices such as a digital still camera and a digital video camera.

  For example, Patent Document 1 discloses an imaging apparatus that performs so-called pupil division type focus detection using a solid-state imaging element in which a microlens is provided for each unit pixel that is two-dimensionally arranged. In the imaging apparatus of Patent Document 1, the photoelectric conversion units of the pixels constituting the imaging element are divided into a plurality of parts, and each of the divided photoelectric conversion units has different pupils divided by the photographing lens through microlenses. It is configured to receive the passed light. Then, focus detection of the imaging optical system can be performed from the amount of deviation between the left photoelectric conversion unit output and the right photoelectric conversion unit output of the pixel.

  Furthermore, Patent Document 1 also refers to 3D video shooting.

  Humans acquire two-dimensional images with the two left and right eyes that are approximately 6 to 7 cm apart in the horizontal direction, but the two left and right images have parallax according to the distance to what they are looking at. Humans recognize the stereoscopic effect and depth by processing the left and right images with parallax with the brain.

  As an apparatus for photographing a 3D image, there is an apparatus that uses two cameras or image sensors, as in the case of human eyes. However, in Patent Document 1, it is configured by one optical system and one image sensor. An image pickup apparatus is disclosed. Using the photoelectric conversion unit divided for each unit pixel, two images with parallax can be generated from the left photoelectric conversion unit output and the right photoelectric conversion unit output. By displaying these two images separately on the left and right eyes of the human by the display / playback device, the stereoscopic effect and the depth can be recognized.

  Further, in Patent Document 2, the unit pixel constituting the pixel portion of the image sensor is configured to include a plurality of divided pixels having different charge accumulation amounts, and the imaging signal of each divided pixel in the unit pixel is digitized and added. Thus, a technique for obtaining a wide dynamic range is disclosed.

  Patent Document 3 also refers to a specific configuration of the imaging apparatus according to Patent Document 1.

JP 58-024105 A JP 2010-028423 A JP 2001-250931 A

  Since a configuration in which a unit pixel includes a plurality of photoelectric conversion units as in Patent Document 1 has a larger number of elements that form a pixel than a configuration in which there is one photoelectric conversion unit of a unit pixel having the same area, The total area of the conversion unit is reduced.

  Conventionally, in a configuration in which the unit pixel includes one photoelectric conversion unit, the floating diffusion unit (FD) is shared by a plurality of pixels, thereby reducing the number of subsequent components and suppressing the decrease in the total area of the photoelectric conversion unit. Technology exists. Patent Document 2 discloses a configuration in which an FD arranged at the center of a pixel is shared in a configuration including four photoelectric conversion units each having a 2 × 2 unit pixel.

  For example, in FIG. 15, a pixel 1502 is configured under one microlens 1501, and the pixel 1502 includes four photoelectric conversion units 1503a, 1503b, 1503c, and 1503d divided into 2 × 2, and these four photoelectric elements The conversion unit shares the FD 1504. For convenience of explanation, only nine pixels are shown, but actually, a plurality of such pixels are arranged to constitute a pixel portion.

  FIG. 16 illustrates an arrangement of photoelectric conversion units that share the FD 1504 of FIG. For convenience of explanation, only two pixels are shown. Fig.16 (a) is II-II sectional drawing of FIG.16 (b). FIG. 16A shows a state in which the photoelectric conversion unit receives light emitted from the exit pupil 1603 of the photographing lens via the microlens 1501. The divided photoelectric conversion units respectively receive light emitted from different areas of the exit pupil 1603.

  However, in the configuration of FIGS. 15 and 16, a region 1601 (dead zone) that does not contribute to photoelectric conversion is formed between the photoelectric conversion units 1503a and 1503b as shown in FIG. 16A. This dead zone region 1601 is a region including the FD 1504. Furthermore, the structure body 1602 including the light shielding member and the wiring, which is configured along with the FD 1504, blocks a light beam incident on the photoelectric conversion unit, thereby causing a decrease in sensitivity.

  On the other hand, in Patent Document 3, in a configuration in which four photoelectric conversion units each having a 2 × 2 unit pixel are provided, FDs are arranged on both the upper and lower sides or both the left and right sides of the pixel, and each is shared by the two photoelectric conversion units. A configuration is disclosed.

  For example, in FIG. 17, a pixel 1702 is formed under one microlens 1701, and the pixel 1702 includes four photoelectric conversion units 1703a, 1703b, 1703c, and 1703d divided into 2 × 2. The photoelectric conversion units 1703a and 1703c share the FD 1704a, and the photoelectric conversion units 1703b and 1703d share the FD 1704b. For convenience of explanation, only nine pixels are shown, but actually, a plurality of such pixels are arranged to constitute a pixel portion.

  FIG. 18 illustrates an arrangement of photoelectric conversion units that share the FDs 1704a and 1704b in FIG. For convenience of explanation, only two pixels are shown. Fig.18 (a) is III-III sectional drawing of FIG.18 (b). FIG. 18A shows a state where the photoelectric conversion unit receives light emitted from the exit pupil 1804 of the photographing lens via the micro lens 1701. The divided photoelectric conversion units respectively receive light emitted from different areas of the exit pupil 1804. Reference numerals 1801a and 1801b denote structures including light shielding members and wirings.

  However, in the configuration of FIG. 17 and FIG. 18, the FD 1704b and the FD 1705 protruding from the adjacent pixels in the horizontal direction are arranged in a region 1802 at the pixel boundary portion. Since the FD 1704b and the FD 1705 need to be separated by a semiconductor region, the pixel boundary region 1802 needs a wide horizontal width. As a result, in this configuration, the horizontal width of the region 1803 of the photoelectric conversion unit is reduced, and the area of the photoelectric conversion unit is reduced.

  In order to obtain the same performance when shooting an image pickup apparatus using this configuration in the vertical position and in the horizontal position, the vertical width and the horizontal width of the photoelectric conversion unit are equal (such as Should be laid out) With this configuration, when it is attempted to configure the photoelectric conversion region isotropically, it becomes more difficult to perform efficient layout.

  The present invention has been made in view of the above problems, and an object thereof is to reduce a dead zone between photoelectric conversion units in a solid-state imaging device including a microlens and a plurality of photoelectric conversion units in a unit pixel, and a photoelectric conversion unit. It is to realize a solid-state imaging device capable of widening the area.

  In order to solve the above problems and achieve the object, a solid-state imaging device according to the present invention includes a plurality of units included in a first unit pixel in a solid-state imaging device including a microlens and a plurality of photoelectric conversion units in a unit pixel. And the plurality of photoelectric conversion units included in the second unit pixel adjacent to the first unit pixel share one floating diffusion unit.

  ADVANTAGE OF THE INVENTION According to this invention, in the solid-state image sensor provided with the micro lens and the some photoelectric conversion part in the unit pixel, the dead zone between photoelectric conversion parts can be reduced and the area of a photoelectric conversion part can be enlarged.

1 is a block diagram showing a configuration of an imaging apparatus according to an embodiment of the present invention. FIG. 3 is a diagram illustrating a configuration of a solid-state imaging element according to the first embodiment. FIG. 3 illustrates a configuration of a pixel portion according to the first embodiment. FIG. 3 is a diagram illustrating in detail a configuration of a pixel portion according to the first embodiment. FIG. 3 is an equivalent circuit diagram of the pixel portion according to the first embodiment. FIG. 3 is a diagram illustrating a configuration of a floating diffusion portion and a signal charge transfer switch according to the first embodiment. FIG. 6 illustrates a configuration of a pixel portion according to a second embodiment. FIG. 6 illustrates a configuration of a pixel portion according to a third embodiment. FIG. 6 illustrates a configuration of a pixel portion according to a fourth embodiment. FIG. 9 shows a configuration of a pixel portion according to a fifth embodiment. FIG. 10 illustrates a configuration of a pixel portion according to a sixth embodiment. FIG. 10 illustrates a configuration of a pixel portion according to a seventh embodiment. FIG. 10 shows a configuration of a pixel portion according to an eighth embodiment. FIG. 10 illustrates a configuration of a pixel portion according to a ninth embodiment. The figure which shows the structure of the pixel part of a prior art. The figure which shows the structure of the pixel part of a prior art in detail. The figure which shows the structure of the pixel part of another prior art. The figure which shows the structure of the pixel part of another prior art in detail.

  Hereinafter, embodiments for carrying out the present invention will be described in detail. The embodiment described below is an example for realizing the present invention, and should be appropriately modified or changed according to the configuration and various conditions of the apparatus to which the present invention is applied. It is not limited to the embodiment. Moreover, you may comprise combining suitably one part of each embodiment mentioned later.

  [Embodiment 1] The configuration of an imaging apparatus according to an embodiment of the present invention will be described with reference to FIG.

  In FIG. 1, a CMOS solid-state imaging device 101 receives an optical image formed by an optical system (not shown). An analog front end (AFE) 102 performs reference level adjustment (clamp processing) and analog-digital conversion processing. A digital front end (DFE) 103 receives digital output of each pixel and performs digital processing such as image signal correction and pixel rearrangement. The image processing unit 104 performs development processing on the digital output from the DFE 103. The memory circuit 105 is a working memory for the image processing unit 104, and is also used as a buffer memory in continuous shooting or the like. The control circuit 106 comprehensively controls the entire imaging apparatus, and incorporates a known CPU. The operation circuit 107 electrically accepts an operation input from an operation member of the imaging apparatus. The display unit 108 is an LCD or the like that displays an image or the like. The recording circuit 109 is specifically a recording medium such as a memory card or a hard disk. A timing generation circuit (TG) 110 generates various timings for driving the solid-state imaging device 101.

  FIG. 2 is a schematic diagram showing the configuration of the solid-state imaging device 101 of the present embodiment.

  As illustrated in FIG. 2, the solid-state imaging device 101 includes a pixel unit 201, a vertical scanning unit 202, a reading unit 203, and a horizontal scanning unit 204. The pixel unit 201 has a plurality of unit pixels arranged in a matrix and receives an optical image formed by an optical system (not shown). The vertical scanning unit 202 sequentially selects a plurality of rows of the pixel unit 201, and the horizontal scanning unit 204 sequentially selects a plurality of columns of the pixel unit 201, thereby sequentially selecting a plurality of pixels of the pixel unit 201. . The reading unit 203 reads the signal of the pixel selected by the vertical scanning unit 202 and the horizontal scanning unit 204 and outputs the read signal to the AFE 102.

  FIG. 3 shows the configuration of the pixel unit 201 in the solid-state image sensor 101. For convenience of explanation, only nine pixels are shown, but actually, a plurality of such pixels are arranged to constitute the pixel unit 201.

  As shown in FIG. 3, the pixel unit 201 is provided with one unit pixel 302 and 306 for one microlens 301 and 305. Furthermore, the pixels 302 and 306 include four photoelectric conversion units 303a to 303d and 307a to 307d divided into 2 × 2. Each of the photoelectric conversion units 303a to 303d and 307a to 307d performs photoelectric conversion of light received via the optical system and accumulates signal charges.

  The signal charges accumulated in the photoelectric conversion units 303a to 303d and 307a to 307d are read to the reading unit via the floating diffusion unit (FD) 304, respectively. In the present embodiment, the FD 304 is shared by a plurality of photoelectric conversion units 303b, 303d, 307a, and 307c. However, in practice, a signal charge transfer switch for controlling the transfer of signal charges from the photoelectric conversion unit to the FD is arranged between each photoelectric conversion unit and the FD. Omitted for convenience, a detailed configuration will be described later.

  FIG. 4 shows an arrangement of photoelectric conversion units that share the FD 304 of the present embodiment. For convenience of explanation, only two pixels are shown. 4A is a cross-sectional view taken along the line I-I in FIG. 4B, and shows a state where the photoelectric conversion unit receives light emitted from the exit pupil 404 of the photographing lens via the microlens 301. The divided photoelectric conversion units respectively receive light emitted from different areas of the exit pupil 404.

  In this embodiment, the FD 304 is shared by four photoelectric conversion units of different pixels, which are the photoelectric conversion units 303 b and 303 d of the pixel 302 and the photoelectric conversion units 307 a and 307 c of the pixel 306. The signal charges accumulated in the respective photoelectric conversion units are read out through the shared FD 304. However, in practice, a signal charge transfer switch for controlling the transfer of signal charges from the photoelectric conversion unit to the FD is arranged between each photoelectric conversion unit and the FD. Omitted for convenience, a detailed configuration will be described later.

  As illustrated in FIG. 4, the FD 304 is disposed between the pixel 302 and the pixel 306. With this configuration, the area of the dead zone between the photoelectric conversion units can be reduced. In addition, since the structure 403 is formed in a region 402 between pixels along with the FD 304, the amount of light that is blocked by the structure from entering the photoelectric conversion unit is reduced.

  In this way, by sharing the FD arranged between the pixels with a plurality of photoelectric conversion units of different pixels, not only can the area of the dead zone between the photoelectric conversion units be reduced, but also the photoelectric conversion by the structure The light flux that is blocked from entering the portion is also reduced. A region for separating each photoelectric conversion unit of the pixel 302 becomes a dead zone, but its width is narrower than the width of the region 402. In addition, since it is not necessary to separate the FD 304 in the semiconductor region, the horizontal width of the region 402 can be reduced. That is, it is possible to ensure a wide horizontal width of the region 401 of the photoelectric conversion unit, and to improve the sensitivity of the image sensor.

  The relationship between the present invention and the embodiment will be described. The first unit pixel corresponds to the pixel 302, the second unit pixel corresponds to the pixel 306, and the floating diffusion portion corresponds to the FD 304.

  FIG. 5 is an equivalent circuit diagram of the pixel unit 201. For convenience of explanation, only two pixels 302 and 306 including a photoelectric conversion unit sharing the FD 304 are shown, but the plurality of pixels are two-dimensionally arranged to constitute the pixel unit 201. Further, although only one column readout unit is shown, a plurality of readout units are arranged for each column to constitute the readout unit 203.

  As shown in FIG. 5, the photoelectric conversion units 303a to 303d in the pixel 302 and the photoelectric conversion units 307a to 307d in the pixel 306 are shown as photodiodes (PD) in FIG. Each photoelectric conversion unit has a function of receiving light in each region of the exit pupil, and generating and accumulating signal charges corresponding to the amount of received light.

  The signal charge transfer switch 501 is driven by the transfer pulse signal φTX1, and transfers the signal charge generated by the photoelectric conversion unit 303b to the FD 304. The signal charge transfer switch 502 is driven by the transfer pulse signal φTX2, and transfers the signal charge generated by the photoelectric conversion unit 303d to the FD 304. The signal charge transfer switch 503 is driven by the transfer pulse signal φTX3, and transfers the signal charge generated by the photoelectric conversion unit 307a to the FD 304. The signal charge transfer switch 504 is driven by the transfer pulse signal φTX4, and transfers the signal charge generated by the photoelectric conversion unit 307c to the FD 304.

  The FD 304 is configured to hold the transferred signal charge.

  The photoelectric conversion unit 303a and the photoelectric conversion unit 303c in the pixel 302 and the photoelectric conversion units 307b and 307d in the pixel 306 share an FD with an adjacent pixel (not shown).

  The reset switch 505 is driven by a reset pulse signal φRES and has a configuration capable of supplying the reference potential VDD to the FD 304.

  The FD 304 holds the charges transferred from the photoelectric conversion units 303b, 303d, 307a, and 307c via the signal charge transfer switches 501, 502, 503, and 504, and converts the held charges into voltage signals. Functions as a voltage converter.

  The amplifying unit 506 amplifies the voltage signal based on the charge held in the FD 304 and outputs it as a pixel signal. Here, as an example, a source follower circuit using a MOS transistor and a constant current source 509 is shown.

  The selection switch 507 is driven by the vertical selection pulse signal φSEL, and the signal amplified by the amplification unit 506 is output to the vertical signal line 508. The signal output to the vertical signal line 508 is read by the reading unit 203 for each column and then output to the AFE 102.

  FIG. 6 shows a detailed configuration of the FD and the signal charge transfer switch. For convenience of explanation, only the FD 304 and the signal charge transfer switches 501, 502, 503, and 504 are shown, but each FD and signal charge transfer switch as shown in the figure are configured in the entire pixel portion.

  In FIG. 6, high impurity concentration regions 601, 602, and 604 are formed on a semiconductor substrate. A wiring 603 connects the region 601 and the region 602.

  As illustrated in FIG. 6A, the FD 304 a includes two regions 601 and 602 that are electrically connected by a wiring 603. The transfer switch 501 is disposed between the photoelectric conversion unit 303b and the region 601 and transfers the signal charge generated by the photoelectric conversion unit 303b to the region 601. The transfer switch 502 is disposed between the photoelectric conversion unit 303d and the region 602, and transfers the signal charge generated by the photoelectric conversion unit 303d to the region 602. The transfer switch 503 is disposed between the photoelectric conversion unit 307a and the region 601 and transfers the signal charge generated by the photoelectric conversion unit 307a to the region 601. The transfer switch 504 is disposed between the photoelectric conversion unit 307 c and the region 602 and transfers the signal charge generated by the photoelectric conversion unit 307 c to the region 602.

  As shown in FIG. 6B, the FD 304 may be configured by one area 604. In this case, the transfer switches 501, 502, 503, and 504 transfer the signal charges generated by the photoelectric conversion units 303b, 303d, 307a, and 307c to the region 604, respectively.

  In the present embodiment, the FD 304, the reset switch 505, the amplification unit 506, and the selection switch 507 are shared by four photoelectric conversion units of different pixels 302 and 306. According to this configuration, as described above, the area of the dead zone between the photoelectric conversion units can be reduced, and the amount of light that is blocked from entering the photoelectric conversion unit by the internal structure of the pixel is reduced. And it becomes possible to ensure the area of a photoelectric conversion part widely, and the sensitivity of an image pick-up element can be improved.

  Here, the arrangement of the reset switch 505, the amplification unit 506, the selection switch 507, and the like in the pixel unit 201 may be configured at appropriate positions between the pixels, or may be configured in the region 402. .

  Further, in the imaging apparatus of the present embodiment, the outputs of the two left photoelectric conversion units 303a and 303c are added and the right two photoelectric conversion units 303b and 303d are added, for example, when driving for focus detection or 3D video shooting. Are added to obtain respective signals.

  On the other hand, at the time of imaging driving, it is necessary to obtain a signal obtained by adding the outputs of four photoelectric conversion units for each pixel. This embodiment may be anything as long as the function is realized. For example, the addition may be performed by the FD 304, may be performed at an arbitrary position in the output path, and may be performed by the subsequent AFE 102, DFE 103, the image processing unit 104, or the like.

  In the solid-state imaging device of this embodiment, when driving focus detection, photoelectric conversion is performed on light incident on the left and right photoelectric conversion units at the same time, and the signal charges of the left and right photoelectric conversion units are output simultaneously. It is also possible to read out.

  As described above, according to the present embodiment, in a solid-state imaging device including a micro lens and a plurality of photoelectric conversion units in a unit pixel, the dead zone between the photoelectric conversion units is reduced, and the area of the photoelectric conversion unit Can be realized.

  [Embodiment 2] Next, a solid-state imaging device of Embodiment 2 will be described.

  FIG. 7 shows the configuration of the pixel unit 201 of the second embodiment. Although only four pixels are cut out and shown, the plurality of pixels are two-dimensionally arranged to constitute the pixel unit 201.

  In the pixel unit 201 of Embodiment 2, one unit pixel 702 is provided for one microlens 701. Unlike the first embodiment, the pixel 702 includes two photoelectric conversion units 703a and 703b divided into 2 × 1, and photoelectrically converts light received from the optical system to accumulate signal charges. The signal charges accumulated in the photoelectric conversion unit are read out to the reading unit 203 via the FD, respectively. In the present embodiment, the photoelectric conversion units 703 b and 707 of two adjacent unit pixels 702 and 706 share the FD 704.

  Here, paying attention to the FD 704 in FIG. 7, the present embodiment is characterized by a combination of the FD 704 and a photoelectric conversion unit that shares the FD 704.

  Specifically, as illustrated in FIG. 7, the FD 704 is disposed between two pixels, a pixel 702 and a pixel 706. The FD 704 is shared by the photoelectric conversion units of two different pixels, that is, the photoelectric conversion unit 703 b of the pixel 702 and the photoelectric conversion unit 707 of the pixel 706. The signal charges accumulated in the respective photoelectric conversion units are read out through the shared FD 704.

  The relationship between the present invention and the embodiment will be described. The first unit pixel is the pixel 702, the first photoelectric conversion unit is the photoelectric conversion unit 703b, the second unit pixel is the pixel 706, and the second photoelectric conversion unit is The photoelectric conversion unit 707 and the floating diffusion unit correspond to the FD 704, respectively.

  [Embodiment 3] Next, a solid-state imaging device of Embodiment 3 will be described.

  FIG. 8 shows a configuration of the pixel unit 201 of the third embodiment. Although only four pixels are cut out and shown, the plurality of pixels are two-dimensionally arranged to constitute the pixel unit 201.

  Similarly to the first embodiment, the pixel unit 201 according to the third embodiment also includes one unit pixel 802 for one microlens 801. The pixel 802 includes four photoelectric conversion units 803a, 803b, 803c, and 803d divided into 2 × 2, and photoelectrically converts light received from the optical system and accumulates signal charges. The signal charges accumulated in the photoelectric conversion unit are read out to the reading unit 203 via the FD, respectively. In this embodiment, the photoelectric conversion units 803d, 807, 810, and 813 of the four adjacent unit pixels 802, 806, 809, and 812 share the FD 804.

  Here, paying attention to the FD 804 in FIG. 8, the present embodiment is characterized by a combination of the FD 804 and a photoelectric conversion unit that shares the FD 804.

  Specifically, as illustrated in FIG. 8, the FD 804 is disposed between four pixels, which are a pixel 802, a pixel 806, a pixel 809, and a pixel 812. In addition, the FD 804 of this embodiment includes four different pixels: a photoelectric conversion unit 803d of the pixel 802, a photoelectric conversion unit 807 of the pixel 806, a photoelectric conversion unit 810 of the pixel 809, and a photoelectric conversion unit 813 of the pixel 812. Shared by the photoelectric conversion unit. The signal charges accumulated in the respective photoelectric conversion units are read out through the shared FD 804.

  The relationship between the present invention and the embodiment will be described. The first unit pixel corresponds to the pixel 802, and the first photoelectric conversion unit corresponds to the photoelectric conversion unit 803d. The second unit pixel adjacent to the first unit pixel corresponds to the pixel 809, and the second photoelectric conversion unit corresponds to the photoelectric conversion unit 810. The third unit pixel adjacent to the second unit pixel corresponds to the pixel 812, and the third photoelectric conversion unit corresponds to the photoelectric conversion unit 813. The fourth unit pixel adjacent to the third unit pixel corresponds to the pixel 806, and the fourth photoelectric conversion unit corresponds to the photoelectric conversion unit 807. The floating diffusion portion corresponds to FD804.

  [Embodiment 4] Next, a solid-state imaging device of Embodiment 4 will be described.

  FIG. 9 shows a configuration of the pixel unit 201 of the fourth embodiment. Although only four pixels are cut out and shown, the plurality of pixels are two-dimensionally arranged to constitute the pixel unit 201.

  In the pixel unit 201 of the fourth embodiment, one unit pixel 902 is provided for one microlens 901 as in the first embodiment. The pixel 902 includes four photoelectric conversion units 903a, 903b, 903c, and 903d divided into 2 × 2, and photoelectrically converts light received from the optical system and accumulates signal charges. The signal charges accumulated in the photoelectric conversion unit are read out to the reading unit 203 via the FD, respectively. The photoelectric conversion units 903d and 910 of the two adjacent unit pixels 902 and 909 share the FD 904, and the photoelectric conversion units 907 and 914 of the other two adjacent unit pixels 906 and 913 share the FD 911.

  Here, paying attention to the FDs 904 and 911 in FIG. 9, the present embodiment is characterized by the arrangement of the FDs 904 and 911 and the combination of the photoelectric conversion units that share them.

  Specifically, as illustrated in FIG. 9, the FDs 904 and 911 are arranged between four pixels, ie, a pixel 902, a pixel 906, a pixel 909, and a pixel 913. The FD 904 is shared by the photoelectric conversion units of two different pixels, that is, the photoelectric conversion unit 903 d of the pixel 902 and the photoelectric conversion unit 910 of the pixel 909. The FD 911 is shared by the photoelectric conversion units of two different pixels, the photoelectric conversion unit 907 of the pixel 906 and the photoelectric conversion unit 914 of the pixel 913. The signal charges accumulated in the respective photoelectric conversion units are read out through the shared FDs 904 and 911.

  In the present embodiment, the FD 904 and the FD 911 are arranged adjacent to each other, but the arrangement between the two FDs with respect to the configuration arranged between the two pixels by arranging them in the region between the four pixels. The area of the photoelectric conversion unit can be widened while ensuring a sufficient separation region.

  The relationship between the present invention and the embodiment will be described. The first unit pixel corresponds to the pixel 902, and the first photoelectric conversion unit corresponds to the photoelectric conversion unit 903d. The second unit pixel adjacent to the first unit pixel corresponds to the pixel 909, and the second photoelectric conversion unit corresponds to the photoelectric conversion unit 910. The first floating diffusion portion corresponds to FD904. The third unit pixel adjacent to the second unit pixel corresponds to the pixel 913, and the third photoelectric conversion unit corresponds to the photoelectric conversion unit 914. The fourth unit pixel adjacent to the third unit pixel corresponds to the pixel 906, and the fourth photoelectric conversion unit corresponds to the photoelectric conversion unit 907. The second floating diffusion portion corresponds to FD911.

  [Embodiment 5] Next, a solid-state imaging device of Embodiment 5 will be described.

  FIG. 10 illustrates a configuration of the pixel unit 201 according to the fifth embodiment. Although only six pixels are cut out and illustrated, the plurality of pixels are two-dimensionally arranged to constitute the pixel unit 201.

  In the pixel unit 201 of the fifth embodiment, one unit pixel 1002 is provided for one microlens 1001 as in the first embodiment. The pixel 1002 includes four photoelectric conversion units 1003a, 1003b, 1003c, and 1003d divided into 2 × 2, and photoelectrically converts light received from the optical system to accumulate signal charges. The signal charges accumulated in the photoelectric conversion unit are read out to the reading unit 203 via the FD, respectively. In the present embodiment, the photoelectric conversion units 1003d and 1012 of the two unit pixels 1002 and 1011 adjacent in the vertical direction share the FD 1004. Further, the photoelectric conversion units 1007 and 1008 adjacent in the vertical direction of the unit pixel 1006 adjacent to the unit pixel 1002 in the horizontal direction share the FD 1009. Further, the photoelectric conversion units 1015 and 1016 adjacent to the unit pixel 1011 in the vertical direction of the unit pixel 1014 adjacent in the horizontal direction share the FD 1017.

  Here, paying attention to the FDs 1004, 1009, and 1017 in FIG. 10, the present embodiment is characterized by the arrangement of the FDs 1004, 1009, and 1017 and the combination of the photoelectric conversion units that share them.

  Specifically, as illustrated in FIG. 10, the FD 1004 is disposed between the pixel 1002 and the pixel 1011. The FD 1009 is disposed between the pixel 1002 and the pixel 1006, and the FD 1017 is disposed between the pixel 1011 and the pixel 1014. The FD 1004 is shared by the photoelectric conversion units of two different pixels, that is, the photoelectric conversion unit 1003 d of the pixel 1002 and the photoelectric conversion unit 1012 of the pixel 1011. The FD 1009 is shared by two photoelectric conversion units of the same pixel, which are a photoelectric conversion unit 1007 and a photoelectric conversion unit 1008. The FD 1017 is shared by two photoelectric conversion units of the same pixel, which are a photoelectric conversion unit 1015 and a photoelectric conversion unit 1016. The signal charges accumulated in the respective photoelectric conversion units are read out through the shared FDs 1004, 1009, and 1017.

  The relationship between the present invention and the embodiment will be described. The first unit pixel corresponds to the pixel 1002, and the first photoelectric conversion unit corresponds to the photoelectric conversion unit 1003d. The second unit pixel adjacent to the first unit pixel corresponds to the pixel 1011, and the second photoelectric conversion unit corresponds to the photoelectric conversion unit 1012. The first floating diffusion portion corresponds to the FD1004. A third unit pixel adjacent to the first unit pixel corresponds to the pixel 1006. The second floating diffusion portion corresponds to FD1009. A fourth unit pixel adjacent to the second unit pixel corresponds to the pixel 1014. The third floating diffusion portion corresponds to 1017.

  [Embodiment 6] Next, a solid state image pickup device of Embodiment 6 will be described.

  FIG. 11 shows a configuration of the pixel unit 201 of the sixth embodiment. Although only six pixels are cut out and illustrated, the plurality of pixels are two-dimensionally arranged to constitute the pixel unit 201.

  Similarly to the first embodiment, the pixel unit 201 of the sixth embodiment is provided with one unit pixel 1102 for one microlens 1101. The pixel 1102 includes four photoelectric conversion units 1103a, 1103b, 1103c, and 1103d divided into 2 × 2, and photoelectrically converts light received from the optical system to accumulate signal charges. The signal charges accumulated in the photoelectric conversion unit are read out to the reading unit 203 via the FD, respectively. In the present embodiment, the photoelectric conversion units 1103d and 1117 of the two unit pixels 1102 and 1116 adjacent to each other share the FD 1104. A plurality of photoelectric conversion units 1107 and 1108 adjacent in the vertical direction of the unit pixel 1106 adjacent to the unit pixels 1102 and 1116 share the FD 1109. Further, the photoelectric conversion units 1112 and 1113 adjacent in the vertical direction of the unit pixel 1111 adjacent to the unit pixels 1102 and 1116 share the FD 1114.

  Here, paying attention to the FDs 1104, 1109, and 1114 in FIG. 11, the present embodiment is characterized by the arrangement of the FDs 1104, 1109, and 1114 and the combination of the photoelectric conversion units that share them.

  Specifically, as illustrated in FIG. 11, the FD 1104 is disposed between the pixel 1102 and the pixel 1116. The FD 1109 is disposed between the pixel 1102 and the pixel 1106, and the FD 1114 is disposed between the pixel 1111 and the pixel 1116. The FD 1104 is shared by the photoelectric conversion units of two different pixels, that is, the photoelectric conversion unit 1103 d of the pixel 1102 and the photoelectric conversion unit 1117 of the pixel 1116. The FD 1109 is shared by two photoelectric conversion units of the same pixel, which are a photoelectric conversion unit 1107 and a photoelectric conversion unit 1108. The FD 1114 is shared by two photoelectric conversion units of the same pixel, which are a photoelectric conversion unit 1112 and a photoelectric conversion unit 1113. The signal charges accumulated in the respective photoelectric conversion units are read out through the shared FDs 1104, 1109, and 1114.

  The relationship between the present invention and the embodiment will be described. The first unit pixel corresponds to the pixel 1102, and the first photoelectric conversion unit corresponds to the photoelectric conversion unit 1103d. The third unit pixel diagonally adjacent to the first unit pixel corresponds to the pixel 1116, and the third photoelectric conversion unit corresponds to the photoelectric conversion unit 1117. The first floating diffusion portion corresponds to the FD 1104. A second unit pixel adjacent to the first unit pixel corresponds to the pixel 1106. The second floating diffusion portion corresponds to the FD 1109. A fourth unit pixel diagonally adjacent to the second unit pixel corresponds to the pixel 1111. The third floating diffusion portion corresponds to FD1114.

  [Embodiment 7] Next, a solid state image pickup device of Embodiment 7 will be described.

  FIG. 12 shows the configuration of the pixel unit 201 of the seventh embodiment. Although only six pixels are cut out and illustrated, the plurality of pixels are two-dimensionally arranged to constitute the pixel unit 201.

  Similarly to the first embodiment, the pixel unit 201 according to the seventh embodiment also includes one unit pixel 1202 for one microlens 1201. The pixel 1202 includes four photoelectric conversion units 1203a, 1203b, 1203c, and 1203d divided into 2 × 2, and photoelectrically converts light received from the optical system to accumulate signal charges. The signal charges accumulated in the photoelectric conversion unit are read out to the reading unit 203 via the FD, respectively. In the present embodiment, the photoelectric conversion units 1208 and 1212 of the two unit pixels 1206 and 1211 adjacent to each other share the FD 1209. Further, the photoelectric conversion unit 1203d of the unit pixel 1202 that is adjacent to the unit pixel 1206 in the horizontal direction, the photoelectric conversion unit 1208 of the unit pixel 1206, and the photoelectric conversion unit 1207 that is adjacent in the vertical direction share the FD 1204. Further, the photoelectric conversion unit 1217 of the unit pixel 1216 adjacent to the unit pixel 1211 in the horizontal direction and the photoelectric conversion unit 1213 adjacent to the unit pixel 1211 in the vertical direction share the FD 1214.

  Here, paying attention to the FDs 1204, 1209, and 1214 in FIG. 12, the present embodiment is characterized by the arrangement of the FDs 1204, 1209, and 1214 and the combination of the photoelectric conversion units that share them.

  Specifically, as illustrated in FIG. 12, the FD 1204 is disposed between the pixel 1202 and the pixel 1206. The FD 1209 is disposed between the pixel 1206 and the pixel 1211, and the FD 1214 is disposed between the pixel 1211 and the pixel 1216. Further, the FD 1204 is shared by the photoelectric conversion units of two different pixels, which are a photoelectric conversion unit 1203 b and a photoelectric conversion unit 1207. The FD 1209 is shared by photoelectric conversion units of two different pixels, which are a photoelectric conversion unit 1208 and a photoelectric conversion unit 1212. The FD 1214 is shared by the photoelectric conversion units of two different pixels, which are a photoelectric conversion unit 1213 and a photoelectric conversion unit 1217. The signal charges accumulated in the respective photoelectric conversion units are read out through the shared FDs 1204, 1209, and 1214.

  The relationship between the present invention and the embodiment will be described. The first unit pixel corresponds to the pixel 1202, and the first photoelectric conversion unit corresponds to the photoelectric conversion unit 1203d. The fourth unit pixel adjacent to the first unit pixel corresponds to the pixel 1206, and the fourth photoelectric conversion unit corresponds to the photoelectric conversion unit 1207. The first floating diffusion portion corresponds to the FD 1204. The second unit pixel adjacent to the first unit pixel corresponds to the pixel 1211, and the second photoelectric conversion unit corresponds to the photoelectric conversion unit 1212. Another fourth photoelectric conversion unit included in the fourth unit pixel diagonally adjacent to the second unit pixel corresponds to the photoelectric conversion unit 1208. The second floating diffusion portion corresponds to the FD 1209. The third unit pixel adjacent to the second unit pixel corresponds to the pixel 1216, and the third photoelectric conversion unit corresponds to the photoelectric conversion unit 1217. The third floating diffusion portion corresponds to the FD 1214.

  [Eighth Embodiment] Next, a solid-state imaging device according to an eighth embodiment will be described.

  FIG. 13A illustrates a first configuration example of the pixel unit 201 according to the eighth embodiment. Although only nine pixels are cut out and shown, the plurality of pixels are two-dimensionally arranged to constitute the pixel unit 201. The plurality of pixels are two-dimensionally arranged to constitute the pixel unit 201.

  In the pixel unit 201 of the eighth embodiment, one unit pixel 1302 is provided for one microlens 1301. The pixel 1302 includes two photoelectric conversion units 1303a and 1303b divided into 2 × 1, photoelectrically converts light received from the optical system, and accumulates signal charges. The signal charges accumulated in the photoelectric conversion unit are read out to the reading unit 203 via the FD, respectively. In this embodiment, the photoelectric conversion units 1303b, 1307a, 1310b, and 1313b of the four adjacent unit pixels 1302, 1306, 1309, and 1312 share the FD 1304 as in the third embodiment of FIG.

  Here, paying attention to the FD 1304 in FIG. 13A, the present embodiment is characterized by a combination of the FD 1304 and a photoelectric conversion unit that shares the FD 1304.

  Specifically, as illustrated in FIG. 13A, the FD 1304 is disposed between four pixels: a pixel 1302, a pixel 1306, a pixel 1309, and a pixel 1312. The FD 1304 is shared by the photoelectric conversion units of four different pixels, which are a photoelectric conversion unit 1303b, a photoelectric conversion unit 1307a, a photoelectric conversion unit 1310b, and a photoelectric conversion unit 1313a. The signal charges accumulated in the respective photoelectric conversion units are read out through the shared FD 1304.

  FIG. 13B illustrates a second configuration example of the pixel unit 201 according to the eighth embodiment. In the second configuration example, the arrangement of FDs in adjacent rows is different from that in the first configuration example.

  In the first configuration example, paying attention to the FDs 1304 and 1314 in FIG. 13A, two adjacent columns of FDs are arranged between the same rows. Therefore, FD is densely packed between the row including the pixel 1302 and the row including the pixel 1309. On the other hand, there can be a line spacing in which no FD is arranged.

  On the other hand, in the second configuration example, paying attention to the FDs 1304 and 1315 in FIG. 13B, two adjacent columns of FDs are arranged between different rows. Therefore, the FDs can be arranged with a uniform density in the plane of the pixel portion 201.

  The relationship between the present invention and the embodiment will be described. The first unit pixel corresponds to the pixel 1302, and the first photoelectric conversion unit corresponds to the photoelectric conversion unit 1303b. The second unit pixel adjacent to the first unit pixel corresponds to the pixel 1309, and the second photoelectric conversion unit corresponds to the photoelectric conversion unit 1310b. The third unit pixel adjacent to the second unit pixel corresponds to the pixel 1312, and the third photoelectric conversion unit corresponds to the photoelectric conversion unit 1313a. The fourth unit pixel adjacent to the fourth unit pixel corresponds to the pixel 1306, and the fourth photoelectric conversion unit corresponds to the photoelectric conversion unit 1307a. The floating diffusion portion corresponds to the FD 1304.

  [Embodiment 9] Next, a solid state image pickup device of Embodiment 9 will be described.

  FIG. 14A illustrates a first configuration example of the pixel unit 201 according to the ninth embodiment. Although only nine pixels are cut out and shown, the plurality of pixels are two-dimensionally arranged to constitute the pixel unit 201.

  In the pixel unit 201 of the ninth embodiment, one unit pixel 1402 is provided for one microlens 1401. The pixel 1402 includes two photoelectric conversion units 1403a and 1403b divided into 2 × 1, photoelectrically converts light received from the optical system, and accumulates signal charges. The signal charges accumulated in the photoelectric conversion unit are read out to the reading unit 203 via the FD, respectively. In the present embodiment, as in the first embodiment of FIG. 3, the plurality of photoelectric conversion units 1407 a and 1407 b of the unit pixel 1406 adjacent to the plurality of photoelectric conversion units 1403 a and 1403 b of the unit pixel 1402 share the FD 1404.

  Here, paying attention to the FD 1404 in FIG. 14A, the present embodiment is characterized by a combination of the FD 1404 and a photoelectric conversion unit that shares the FD 1404.

  Specifically, as illustrated in FIG. 14A, the FD 1404 is disposed between the pixel 1402 and the pixel 1406. The FD 1404 is shared by photoelectric conversion units of two different pixels, which are the photoelectric conversion units 1403 a and 1403 b of the pixel 1402 and the photoelectric conversion units 1407 a and 1407 b of the pixel 1406. The signal charges accumulated in the respective photoelectric conversion units are read out through the shared FD 1404.

  FIG. 14B illustrates a second configuration example of the pixel unit 201 according to the ninth embodiment. The second configuration example is different from the first configuration example in the arrangement of FDs in adjacent rows.

  In the first configuration example, paying attention to the FDs 1404 and 1408 in FIG. 14A, two adjacent columns of FDs are arranged between the same rows. Therefore, FD is densely packed between the row including the pixel 1402 and the row including the pixel 1406. On the other hand, there can be a line spacing in which no FD is arranged.

  On the other hand, in the second configuration example, paying attention to the FDs 1404 and 1409 in FIG. 14B, two adjacent columns of FDs are arranged between different rows. Therefore, the FDs can be arranged with a uniform density in the plane of the pixel portion 201.

  The relationship between the present invention and the embodiment will be described. The first unit pixel corresponds to the pixel 1402, and the plurality of photoelectric conversion units correspond to the photoelectric conversion units 1403a and 1403b, respectively. The second unit pixel adjacent to the first unit pixel corresponds to the pixel 1406, and the plurality of photoelectric conversion units correspond to the photoelectric conversion units 1407a and 1407b, respectively. The floating diffusion portion corresponds to FD1404.

  As mentioned above, although embodiment which concerns on this invention was described, also in Embodiment 2-9, it can not only make the area of a dead zone between photoelectric conversion parts small like Embodiment 1, but it is photoelectric conversion with a structure. The light flux that is blocked from entering the portion is also reduced. Furthermore, it is possible to secure a wide photoelectric conversion unit, and the sensitivity of the image sensor can be improved.

  In each embodiment, the configuration of the color filter (CF) that performs color separation of light incident on the photoelectric conversion unit can be freely configured according to the use of the solid-state imaging device. For example, in a certain pixel, all of the plurality of photoelectric conversion units may include a CF having the same color spectral transmittance, or may have a spectral transmittance of different colors. In addition, pixels in which the CF colors corresponding to the plurality of photoelectric conversion units in the pixel are all the same color and pixels including different colors may be mixed in the pixel unit.

  For example, in Embodiment 8 (FIG. 13A), the photoelectric conversion units 1307a, 1307b, 1310a, and 1310b are set as the first color, the photoelectric conversion units 1303a and 1303b are set as the second color, and the photoelectric conversion units 1313a and 1313b. May be the third color. In another example, the photoelectric conversion units 1303b, 1307a, 1310a, and 1313b may be the first color, the photoelectric conversion units 1303a and 1307b may be the second color, and the photoelectric conversion units 1310b and 1313a may be the third color. Good.

  Furthermore, if the same color CF is configured in the photoelectric conversion units that share the same FD in each embodiment, it is possible to add signals of the same color component in the FD at the time of imaging driving, and the time required for scanning for readout Can be shortened.

Claims (14)

In a solid-state imaging device including a microlens and a plurality of photoelectric conversion units in a unit pixel,
A plurality of photoelectric conversion units included in the first unit pixel and a plurality of photoelectric conversion units included in the second unit pixel adjacent to the first unit pixel share one floating diffusion unit. A solid-state imaging device characterized by being made. In a solid-state imaging device including a microlens and a plurality of photoelectric conversion units in a unit pixel,
The first photoelectric conversion unit included in the first unit pixel and the second photoelectric conversion unit included in the second unit pixel adjacent to the first unit pixel share one floating diffusion unit. The solid-state image sensor characterized by being comprised by these. In a solid-state imaging device including a microlens and a plurality of photoelectric conversion units in a unit pixel,
Adjacent to the first photoelectric conversion unit included in the first unit pixel, the second photoelectric conversion unit included in the second unit pixel adjacent to the first unit pixel, and the second unit pixel. The third photoelectric conversion unit included in the third unit pixel and the fourth photoelectric conversion unit included in the fourth unit pixel adjacent to the third unit pixel share one floating diffusion unit. The solid-state image sensor characterized by being comprised by these. In a solid-state imaging device including a microlens and a plurality of photoelectric conversion units in a unit pixel,
The first photoelectric conversion unit included in the first unit pixel and the second photoelectric conversion unit included in the second unit pixel adjacent to the first unit pixel share the first floating diffusion unit. ,
A third photoelectric conversion unit included in a third unit pixel adjacent to the second unit pixel; and a fourth photoelectric conversion unit included in a fourth unit pixel adjacent to the third unit pixel. Share the second floating diffusion part,
A solid-state imaging device, wherein the first floating diffusion portion and the second floating diffusion portion are adjacent to each other. In a solid-state imaging device including a microlens and a plurality of photoelectric conversion units in a unit pixel,
The first photoelectric conversion unit included in the first unit pixel and the second photoelectric conversion unit included in the second unit pixel adjacent to the first unit pixel share the first floating diffusion unit. ,
A plurality of photoelectric conversion units included in a third unit pixel adjacent to the first unit pixel share a second floating diffusion unit;
A plurality of photoelectric conversion units included in a fourth unit pixel adjacent to the second unit pixel are configured to share a third floating diffusion unit;
A solid-state imaging device, wherein the first floating diffusion portion is disposed between the second floating diffusion portion and the third floating diffusion portion. In a solid-state imaging device including a microlens and a plurality of photoelectric conversion units in a unit pixel,
The first photoelectric conversion unit included in the first unit pixel and the third photoelectric conversion unit included in the third unit pixel diagonally adjacent to the first unit pixel are the first floating diffusion unit. Share
A plurality of photoelectric conversion units included in a second unit pixel adjacent to the first unit pixel share a second floating diffusion unit;
A plurality of photoelectric conversion units included in a fourth unit pixel diagonally adjacent to the second unit pixel are configured to share a third floating diffusion unit;
A solid-state imaging device, wherein the first floating diffusion portion is disposed between the second floating diffusion portion and the third floating diffusion portion. In a solid-state imaging device including a microlens and a plurality of photoelectric conversion units in a unit pixel,
The first photoelectric conversion unit included in the first unit pixel and the fourth photoelectric conversion unit included in the fourth unit pixel adjacent to the first unit pixel share the first floating diffusion unit. ,
A second photoelectric conversion unit included in a second unit pixel adjacent to the first unit pixel, and another fourth included in the fourth unit pixel diagonally adjacent to the second unit pixel. And the photoelectric conversion unit share the second floating diffusion unit,
Another second photoelectric conversion unit included in the second unit pixel and a third photoelectric conversion unit included in a third unit pixel adjacent to the second unit pixel are a third floating diffusion unit. Share
A solid-state imaging device, wherein the second floating diffusion portion is disposed between the first floating diffusion portion and the third floating diffusion portion.   The solid-state imaging device according to claim 3, wherein the adjacent floating diffusion portions are disposed between the same rows.   The solid-state imaging device according to claim 3, wherein the adjacent floating diffusion portions are disposed between different rows.   10. The solid-state imaging device according to claim 1, wherein a width for separating a plurality of adjacent photoelectric conversion units of one unit pixel is smaller than a width between adjacent unit pixels. .   11. The solid-state imaging device according to claim 1, wherein the plurality of photoelectric conversion units of one unit pixel include color filters having the same spectral transmittance.   11. The solid-state imaging element according to claim 1, wherein the plurality of photoelectric conversion units of one unit pixel include color filters having different spectral transmittances.   The solid-state imaging device according to claim 1, wherein the floating diffusion part is connected to an amplifying part.   An imaging apparatus comprising the solid-state imaging element according to claim 1.

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