JP2014020815A - Substrate inspection device and substrate inspection method - Google Patents

Abstract

An inspection time is sufficiently shortened without causing an increase in inspection cost, and whether or not there is a defect is reliably inspected regardless of whether it is surface-mounted or built-in.
Each inspection probe 11 should be moved with respect to the inspection target substrate 20 at the time of inspection of the inspection target substrate 20 on which the capacitive element 30 is mounted, and a connection electrode 32a in the capacitive element 30 should be connected. The probe 11 for inspection is probed to the inspection point P1 defined on the conductor pattern 21a, and the inspection point P2 defined on the conductor pattern 21b to which the connection electrode 32b in the capacitive element 30 should be connected. The probe 11 for inspection is probed, and the dielectric loss tangent between the inspection points P1 and P2 is measured. When the dielectric loss tangent exceeding the specified value is measured, a defect occurs between the conductor patterns 21a and 21b. It is determined that
[Selection] Figure 3

Description

  The present invention relates to a substrate inspection apparatus and a substrate inspection method for inspecting pass / fail of each inspection point based on a physical quantity measured for each inspection point defined on a substrate to be inspected.

  As this type of board inspection apparatus and board inspection method, the applicant has disclosed an in-circuit tester and a soldering failure detection method (board inspection method) in Japanese Patent Application Laid-Open No. 7-104026. This in-circuit tester is provided between a lead (connecting terminal) of a flat package IC or the like (hereinafter also referred to as “electronic component”) surface-mounted on a substrate to be inspected and a pattern to which the lead is to be connected. A board inspection apparatus configured to be capable of inspecting whether or not a soldering failure has occurred, wherein a measurement table on which a board to be inspected can be placed, four measurement probes, and each measurement probe are separately and independently provided. It comprises four XY units that are moved in an arbitrary XY direction, and a resistance measurement circuit to which each measurement probe is connected.

  When detecting a soldering failure by the in-circuit tester (hereinafter also referred to as “inspection of a substrate to be inspected”), first, the measurement probe connected to the + source terminal of the resistance measurement circuit and the + sense of the resistance measurement circuit Two of the measurement probes connected to the terminals are respectively probed to the shoulder portion, the tip portion, etc. of the lead of the electronic component mounted on the board to be inspected. In addition, two probes, the measurement probe connected to the -sense terminal of the resistance measurement circuit and the measurement probe connected to the -source terminal of the resistance measurement circuit, are connected to a lead obtained by probing the above two measurement probes. Probing each pattern to be done. Next, a constant current is supplied between the two source terminals, and the voltage value of the voltage generated between the two sense terminals in that state is measured, and based on the supplied constant current value and the measured voltage value, The resistance value between the lead of the component and the pattern is calculated (resistance value measurement processing by a four-terminal method).

  At this time, if the lead is normally soldered to the pattern, a resistance value not more than a predetermined threshold value is calculated. Therefore, when a resistance value equal to or lower than the threshold value is calculated, it is determined that the lead having the other two measurement probes probed is properly soldered to the pattern in which the two measurement probes are probed. To do. On the other hand, when the lead is incompletely soldered to the pattern, a large resistance value exceeding the threshold value is calculated. In addition, when the lead is completely separated from the pattern (when not connected), the calculated resistance value is infinite. Therefore, when a large resistance value (including infinity) exceeding the threshold is calculated, it is determined that the lead is not properly soldered to the pattern (a soldering failure has occurred). . After this, between the other leads and the pattern, the resistance value is measured in the same procedure as the above-described series of processing and compared with the threshold value. Inspect whether or not.

JP-A-7-104026 (page 3-5, FIG. 1-10)

  However, the in-circuit tester and the substrate inspection method disclosed by the applicant have the following problems to be improved. That is, the in-circuit tester (board inspection method) disclosed by the applicant inspects whether or not a soldering defect has occurred by sequentially measuring the resistance value between the lead of the electronic component and the pattern. A configuration (method) is adopted. In this case, when inspecting the board to be inspected by this type of board inspection apparatus, not only the presence or absence of defective soldering but also the difference in the mounted parts (a state in which a part different from the electronic part to be mounted is mounted) It is necessary to inspect for the presence or absence of damage and the presence or absence of damage to the mounted components (a state in which a defective electronic component that cannot exhibit its inherent electrical performance is mounted).

  Specifically, for example, when a capacitive element as an electronic component is mounted on a substrate to be inspected, soldering between a pair of connection electrodes (connection terminals) of the capacitive element and a conductor pattern In addition to the presence or absence of a defect, it is necessary to inspect whether the capacitive element is a different product or a defective element. In this case, when inspecting for product differences or defects, as an example, a constant current is applied between both source terminals with a pair of measurement probes probed to both connection electrodes of the capacitive element to be inspected. The voltage value of the voltage generated between the two sense terminals in that state is measured, and the electrostatic value is measured based on the current value of the supplied constant current, the measured voltage value, and the phase difference between the current and the voltage. The capacity is calculated, and the calculated value is compared with the reference value.

  Therefore, in the in-circuit tester disclosed by the applicant, the probing position for probing each measurement probe when inspecting the difference or defect of the capacitive element is soldered to both connection electrodes of the capacitive element. Since it is different from the probing position for probing each measurement probe when inspecting whether or not a defect has occurred, one of the two connection electrodes of the capacitive element and the conductor to which the connection electrode should be connected An inspection step for measuring a resistance value in order to inspect whether there is a soldering defect with the pattern, between the other connection electrode of the capacitive element and the conductor pattern to which the connection electrode should be connected An inspection step that measures the resistance value to inspect the presence or absence of soldering defects, and a capacitance measurement to inspect the presence or absence of defective or defective capacitive elements Every three test step of testing step of, it is necessary to move the measurement probe to each separate probing position by the X-Y unit. For this reason, the in-circuit tester (substrate inspection method) disclosed by the applicant requires a series of inspections related to the capacitive element by the time required to move each measurement probe for each inspection step. It is difficult to shorten the time, and it is preferable to improve this point.

  In this case, instead of the configuration (method) in which each measurement probe is moved by the XY unit, each inspection point on the substrate to be inspected is inspected using an inspection jig provided with a plurality of probes. By adopting a configuration (method) for probing the probe simultaneously, one connection electrode of the capacitive element, a conductor pattern to which the connection electrode should be connected, by moving the inspection jig once, A pair of measurement probes can be probed to the other four connection electrodes of the capacitive element and the four conductor patterns to which the connection electrodes are to be connected. Thus, the time required for a series of inspections related to the capacitive element can be shortened by the amount that it is not necessary to move the measurement probe by each XY unit at each inspection step. However, when such a configuration (method) is adopted, an inspection jig having eight (= 4 × 2) measurement probes is manufactured for inspection related to one capacitive element. Need arises. For this reason, the manufacturing cost of the inspection jig increases, and as a result, the inspection cost of the substrate to be inspected may increase.

  On the other hand, in a substrate that is an inspection target of this type of substrate inspection apparatus (substrate inspection method), even if both connection electrodes of the capacitive element are normally connected to the pattern, for example, the capacitive element In some cases, cracks are generated, and then the crack surfaces are in contact with each other so that the crack surfaces are in close contact with each other. When inspecting a substrate to be inspected on which a capacitive element having such a defect is mounted, the capacitance measured in a state in which the measurement probe is probed with respect to both connection electrodes is within a reference range. May be a value. Therefore, when the defect in the example as described above occurs, all of the inspections related to the capacitive element are normal even though the defective capacitive element in which the crack has occurred is mounted. It is preferable to improve this point.

  In addition, some substrates to be inspected have not only surface-mounted capacitive elements but also capacitive elements mounted (incorporated) on the inner layer of a multilayer board. However, in the in-circuit tester (substrate inspection method) disclosed by the applicant, in order to inspect for the presence or absence of soldering defects, the leads of the capacitive element to be inspected and the pattern to which the leads should be connected A pair of measurement probes must be brought into contact with each other. Therefore, in the in-circuit tester (substrate inspection method) disclosed by the applicant, it is difficult to inspect whether or not there is a connection failure between the connection electrode of the built-in capacitive element and the pattern. Therefore, it is preferable to improve this point.

  The present invention has been made in view of the problems to be improved, and can sufficiently reduce the time required for inspecting a substrate to be inspected without causing an increase in inspection cost, and can be either surface-mounted or built-in. It is a main object to provide a substrate inspection apparatus and a substrate inspection method capable of reliably inspecting whether a capacitive element mounted on a substrate to be inspected is defective in connection, quality difference, damage or the like. Objective.

  In order to achieve the above object, a substrate inspection apparatus according to claim 1, wherein at least a pair of inspection probes probed at a plurality of inspection points defined on a substrate to be inspected on which a capacitive element is mounted, and each of the inspection probes A moving mechanism for moving at least one of the probe and the substrate to be inspected with respect to the other and probing the inspection probe at each inspection point, and entering each inspection point via the inspection probe. A measurement unit that measures a physical quantity between the respective inspection points based on the output electrical signal, and controls the measurement of the physical quantity by the at least one movement by the moving mechanism and the measurement unit, and measurement by the measurement unit A substrate inspection apparatus comprising: an inspection processing unit that determines pass / fail between the inspection points based on a result; The inspection processing unit should connect one connection electrode in the capacitive element by controlling the moving mechanism to move the at least one relative to the other during the inspection of the substrate to be inspected. Probing one of the inspection probes to the inspection point defined on the first connection conductor, and the other connection electrode of the capacitive element should be connected Probing another one of the inspection probes to the inspection point defined on the two connection conductors, and controlling the measurement unit on the first connection conductor First measurement processing for measuring a dielectric loss tangent between the inspection point and the inspection point on the second connection conductor portion as the physical quantity is executed, and the measurement unit performs in advance When the dielectric loss tangent of greater than a constant value is determined, it is determined that failure has occurred between the first connecting conductor part and the second connecting conductor part.

  The substrate inspection apparatus according to claim 2 is the substrate inspection apparatus according to claim 1, wherein the inspection processing unit controls the moving mechanism to inspect the inspection target substrate during the inspection of the first connection conductor. Probing the one inspection probe to the inspection point on the part and probing the other one inspection probe to the inspection point on the second connecting conductor part, and A second measurement process is performed to control and measure, as the physical quantity, a capacitance between the inspection point on the first connection conductor and the inspection point on the second connection conductor. When the capacitance exceeding the predetermined upper limit value and the capacitance lower than the predetermined lower limit value are measured by the measurement unit, the first connecting conductor portion and the second connection conductor portion are measured. Contact It is determined that failure has occurred between the use conductor portion.

  Furthermore, the board inspection apparatus according to claim 3 is the board inspection apparatus according to claim 2, wherein the inspection processing unit controls the measurement unit to control the inspection point on the first connection conductor part and the inspection unit. The dielectric loss tangent and the capacitance between the two inspection points are respectively measured by inputting and outputting the electric signal once between the inspection points on the second connecting conductor portion.

  According to a fourth aspect of the present invention, there is provided a substrate inspection method comprising: at least one of at least one pair of inspection probes probed at a plurality of inspection points defined on an inspection target substrate on which a capacitive element is mounted; Each of the inspection points is probed based on an electrical signal input to and output from each of the inspection points via the inspection probes. A substrate inspection method for measuring a physical quantity between the inspection points and determining the quality between the inspection points based on the measurement result, wherein at least one of the inspection points is moved with respect to the other during inspection of the inspection target substrate Thus, one of the connection electrodes in the capacitive element is defined on the first connection conductor portion to be connected. The inspection point is probed with one of the inspection probes, and the other connection electrode of the capacitive element is defined on the second connection conductor portion to be connected Probing another one of the respective inspection probes to the inspection point, and between the inspection point on the first connection conductor and the inspection point on the second connection conductor The first connection process and the second connection conductor are performed when a dielectric loss tangent exceeding a predetermined value is measured by performing a first measurement process for measuring a dielectric loss tangent of the first physical quantity as the physical quantity. It is determined that a defect has occurred between the parts.

  In the substrate inspection apparatus according to claim 1 and the substrate inspection method according to claim 4, at the time of inspection of the inspection target substrate on which the capacitive element is mounted, at least one of each inspection probe and inspection target substrate is set to the other. Moving one of the inspection probes to the inspection point defined on the first connection conductor to which one of the connection electrodes of the capacitive element is to be connected; and The other one of the inspection probes is probed to the inspection point defined on the second connection conductor portion to which the other connection electrode of the capacitive element is to be connected, and the first The first measurement process is performed to measure the dielectric loss tangent between the inspection point on the connecting conductor portion of the second and the inspection point on the second connecting conductor portion, and the invitation exceeds the predetermined value. When the tangent is measured to determine a failure between the first connecting conductor part and the second connecting conductor part has occurred.

  Therefore, according to the substrate inspection apparatus according to claim 1 and the substrate inspection method according to claim 4, each inspection point on the inspected substrate is inspected using the inspection jig in which a plurality of probes are arranged. When a configuration (method) in which each probe is simultaneously probed, two inspection probes probed to the inspection point on the first connecting conductor portion and the inspection point on the second connecting conductor portion Therefore, since it is possible to inspect whether or not a connection failure has occurred between the connection electrode of the capacitive element and each connection conductor portion, or whether a damage such as a crack has occurred in the capacitive element, Due to the small number of inspection probes arranged on the inspection jig for inspection of the capacitive element, the manufacturing cost of the inspection jig can be reduced, and the inspection cost of the substrate to be inspected is sufficiently high. Low It can be. In addition, it is possible to reliably inspect whether or not there is a connection failure even with respect to the “built-in capacitive element” in which the probe for inspection cannot be directly probed on the connection electrode. In addition, when a configuration (method) in which each measurement probe is moved by a moving mechanism such as an XY unit, a pair of inspection probes is connected to an inspection point on the first connection conductor portion and a second connection probe. Whether or not there is a connection failure between the two connection electrodes of the capacitive element and the two connection conductors, and the capacitance by only one probing operation for probing the inspection point on the connection conductor. Since it is possible to inspect whether the element is damaged such as a crack, the number of probing times for inspecting the capacitive element can be sufficiently reduced, and as a result, the time required for inspecting the inspection target substrate is sufficiently shortened. can do.

  In the substrate inspection apparatus according to claim 2, when inspecting the inspection target substrate on which the capacitive element is mounted, one inspection probe is probed at an inspection point on the first connecting conductor portion, and Probing another inspection probe to the inspection point on the two connecting conductors, and between the inspection point on the first connecting conductor and the inspection point on the second connecting conductor When the second measurement process for measuring the capacitance is performed and the capacitance exceeding the predetermined upper limit value and the capacitance lower than the predetermined lower limit value are measured, the first connection is performed. It is determined that a defect has occurred between the connecting conductor portion and the second connecting conductor portion.

  Therefore, according to the substrate inspection apparatus of claim 2, a configuration (method) for simultaneously probing each probe with respect to each inspection point on the substrate to be inspected using an inspection jig in which a plurality of probes are arranged. Is used to inspect whether there is a connection failure between the inspection point on the first connecting conductor and the inspection point on the second connecting conductor, or whether the capacitive element is damaged. Since it is possible to inspect whether the capacitive element is different or not using a pair of inspection probes, it is possible to use other inspections to inspect whether the capacitive element is different. The manufacturing cost of the inspection jig can be further reduced by the amount that the probe need not be separately provided. In addition, when a configuration (method) in which each measurement probe is moved by a moving mechanism such as an XY unit is used, the first connection is performed in order to inspect whether there is a connection failure or a capacitive element is damaged. It is also possible to inspect whether or not the capacitive elements are different using a pair of inspection probes probed to the inspection point on the conductor part and the inspection point on the second connection conductor part, respectively. Therefore, in order to inspect whether the capacitive element is different or not, it is necessary to inspect the board to be inspected as much as it is not necessary to probe the inspection probe at the inspection point different from the inspection such as connection failure. The time required can be further shortened.

  Further, according to the substrate inspection apparatus of the third aspect, both electrical signals are input / output between the inspection point on the first connection conductor portion and the inspection point on the second connection conductor portion. By measuring the dielectric loss tangent and capacitance between the inspection points, respectively, applying a constant voltage to measure the electrostatic capacitance and applying a constant voltage to measure the dielectric loss tangent are performed separately. Compared with the configuration for measuring the capacitance and the dielectric loss tangent, respectively, the time required for the measurement of the electrostatic capacitance and the dielectric loss tangent can be sufficiently shortened, thereby sufficiently reducing the time required for the inspection of the substrate to be inspected. be able to.

1 is a configuration diagram showing a configuration of a substrate inspection apparatus 1. FIG. FIG. 3 is a cross-sectional view of a state in which inspection probes 11 are probed at inspection points P1 and P2 on an inspection target substrate 20, respectively. It is sectional drawing of the state in which connection failure X1, X2 produced in solder 22a, 22b for connecting electrode 32a, 32b for connection and conductor pattern 21a, 21b. 3 is a cross-sectional view of a state in which cracks X3 and X4 are generated in the solder 22a and the body 31 of the capacitive element 30. FIG. FIG. 4 is a cross-sectional view of a state in which inspection probes 11 are respectively probed at inspection points P3 and P4 on a substrate 20 to be inspected. It is sectional drawing of the state in which connection failure X5, X6 produced between the conductor patterns 23a and 23c and between the electrode 42b for a connection, and the conductor pattern 23b. It is sectional drawing of the state in which the connection failure X7 produced between the connection electrode 42a and the connection electrode 23a. FIG. 4 is a cross-sectional view of a state where a crack X8 has occurred in a body 41 of a capacitive element 40.

  Embodiments of a substrate inspection apparatus and a substrate inspection method according to the present invention will be described below with reference to the accompanying drawings.

  A substrate inspection apparatus 1 shown in FIG. 1 is an inspection apparatus configured to be able to electrically inspect a substrate 20 to be inspected according to a “substrate inspection method” to be described later, and includes a substrate holding unit 2, a moving mechanism 3, a scanner 4, The measuring unit 5, the operation unit 6, the display unit 7, the control unit 8, the storage unit 9, and the inspection jig 10 are configured. In this case, the inspection target substrate 20 is a multilayer substrate which is an example of the “inspection target substrate”, and various electronic components such as a capacitive element (capacitor) 30 are surface-mounted as shown in FIG. As shown in FIG. 5, various electronic components such as a capacitive element (capacitor) 40 are incorporated. In FIGS. 2 and 5 and FIGS. 3, 4 and 6 to 8 to be referred to later, illustration of electronic components (mounting components) other than the capacitive elements 30 and 40 is omitted.

  In this case, as shown in FIG. 2, the capacitive element 30 is provided with a connection electrode 32 a (an example of “one connection electrode”) at one end of the body 31 and the other end of the body 31. A connection electrode 32b (an example of “the other connection electrode”) is provided at the end, and the connection electrode 32a is electrically connected to the conductor pattern 21a formed on the surface of the inspection target substrate 20 by the solder 22a. In addition, the connection electrode 32b is electrically connected to the conductor pattern 21b formed on the surface of the inspection target substrate 20 by the solder 22b. In this example, the conductor pattern 21a and the solder 22a are combined to form a “first connecting conductor portion”. As an example, the inspection point P1 defined on the conductor pattern 21a is “the first connecting conductor portion”. It corresponds to “upper inspection point”. In this example, the conductor pattern 21b and the solder 22b together constitute a “second connecting conductor portion”. As an example, the inspection point P2 defined on the conductor pattern 21b is “the second connecting conductor portion”. It corresponds to “upper inspection point”.

  As shown in FIG. 5, the capacitive element 40 is provided with a connection electrode 42 a (another example of “one connection electrode”) at one end of the body 41 and the other end of the body 41. The connection electrode 42b (another example of “the other connection electrode”) is provided at the end of the substrate, and the connection electrode 42a is soldered to the conductor pattern 23a formed on the inner layer of the inspection target substrate 20 (not shown). ) And the connection electrode 42b is electrically connected to the conductor pattern 23b formed from the surface of the substrate 20 to be inspected to the inner layer by solder (not shown). The conductor pattern 23a is electrically connected to the conductor pattern 23c formed from the surface of the inspection target substrate 20 to the inner layer. In this example, the conductor patterns 23a, 23c and the solder together constitute a “first connecting conductor portion”. As an example, the inspection point P3 defined on the conductor pattern 23c is “the first connecting conductor”. It corresponds to “inspection point on the department”. In this example, the conductor pattern 23b and the solder together constitute a “second connecting conductor portion”. As an example, the inspection point P4 defined on the conductor pattern 23b is “on the second connecting conductor portion”. Corresponds to “inspection point”.

  On the other hand, the substrate holding unit 2 is configured to hold the inspection target substrate 20. The moving mechanism 3 is disposed in the inspection jig 10 by moving the inspection jig 10 toward the inspection target substrate 20 held by the substrate holding unit 2 under the control of the control unit 8. Each inspection probe 11 is probed to each inspection point P such as the above inspection points P1 to P4 on the inspection target substrate 20 (“at least one of the inspection jig and the inspection target substrate” is “inspection jig”. Example of configuration). In this case, the inspection jig 10 includes a plurality of inspection probes 11 arranged in accordance with the arrangement of the inspection points P defined on the substrate surface of the inspection target substrate 20. As will be described later, in order to enable the measurement unit 5 to measure a physical quantity (electrical parameter) by the four-terminal method, the inspection probe 11 is not contacted with each other as shown in FIGS. A pair of probes 11a and 11b which are brought close to each other in the state are provided.

  The scanner 4 measures an arbitrary pair (two probes 11 a and two probes 11 b) among a large number of inspection probes 11 arranged in the inspection jig 10 according to the control of the measurement unit 5. Selectively connect to 5. The measurement unit 5 measures the “physical quantity” between the inspection points P and P through the inspection probes 11 (probes 11a and 11b) of the inspection jig 10 according to the control of the control unit 8, and the measurement result Is output to the control unit 8. In this case, in this board inspection apparatus 1, as will be described later, when the measuring unit 5 inspects the capacitive elements 30 and 40, the dielectric loss tangent between the inspection points P and P and the electrostatic capacitance between the inspection points P and P are obtained. A configuration is adopted in which the capacity is measured as a “physical quantity”. The operation unit 6 includes various operation switches for setting operation conditions (inspection conditions) of the substrate inspection apparatus 1, and outputs an operation signal corresponding to the switch operation to the control unit 8. The display unit 7 under the control of the control unit 8, an operation condition setting screen for setting the operation condition (inspection condition) of the substrate inspection apparatus 1 and an inspection for notifying the inspection result of the inspection target substrate 20 (substrate). Various display screens (not shown) such as a result notification screen are displayed.

  The control unit 8 comprehensively controls the substrate inspection apparatus 1. Specifically, the control unit 8 corresponds to an “inspection processing unit” and controls the moving mechanism 3 to move the inspection jig 10 toward the inspection target substrate 20 held by the substrate holding unit 2. By doing so, each inspection probe 11 of the inspection jig 10 is probed to each inspection point P defined on the inspection target substrate 20. In addition, the control unit 8 controls the measurement unit 5 to measure the above-described dielectric loss tangent (an example of “first measurement process”), and to measure the capacitance (“second measurement process”). Etc.) is performed. Further, the control unit 8 determines whether or not there is a defect between the inspection points P and P based on the result of the measurement process by the measurement unit 5, and the determination result is stored in the storage unit 9 as inspection result data D1. Remember.

  The storage unit 9 stores inspection procedure data D0 in which an inspection procedure for the inspection target substrate 20 is recorded, inspection result data D1 indicating an inspection result for the inspection target substrate 20, and the like. In this case, the inspection procedure data D0 used by the substrate inspection apparatus 1 of the present example can specify the inspection item defined in advance for each inspection point P defined on the inspection target substrate 20, “for inspection to be used” The “pin number of the probe 11”, “type of physical quantity (electrical parameter) to be measured”, and “lower limit value and upper limit value for pass / fail determination” are configured by data recorded in order of each inspection step.

  Specifically, the inspection step relating to the capacitive element 30 (or the capacitive element 40) includes “inspection points P1, P2 (or inspection points P3, P4) as“ pin numbers of the inspection probe 11 to be used ””. “Pin number of the probe 11 to be probed” is recorded, “Capacitance” and “Dielectric loss tangent” are recorded as “Type of physical quantity (electrical parameter) to be measured”, and “Pass / fail based on capacitance” "Lower limit value and upper limit value for determination" "capacitance absorbed from inspection target substrate 20 on which good capacitive element 30 (or good capacitive element 40) is mounted, or capacitive element 30 (or , Specified based on the standard value of the capacitive element 40) (specified by the manufacturer of the capacitive element) and “specified based on the reference capacity” “Lower limit value and upper limit value” are recorded, “Lower limit value for pass / fail judgment based on dielectric loss tangent” is recorded as “0”, and “Upper limit value for pass / fail judgment based on dielectric loss tangent” is recorded as “Capacitive A value defined based on the specifications of the element 30 (or the capacitive element 40) ”is recorded.

  When the inspection target substrate 20 is inspected by the substrate inspection apparatus 1, first, the inspection target substrate 20 is held by the substrate holding unit 2. Next, when a start switch (not shown) of the operation unit 6 is operated, the control unit 8 starts an inspection process for the inspection target substrate 20. Specifically, the control unit 8 first controls the moving mechanism 3 to move the inspection jig 10 toward the inspection target substrate 20 held by the substrate holding unit 2, thereby inspecting the inspection target substrate 20. Each inspection probe 11 of the inspection jig 10 is probed to each inspection point P above. In the inspection of the inspection target substrate 20, the presence or absence of defects relating to various electronic components other than the capacitive elements 30 and 40 and the presence or absence of defects relating to conductor patterns other than the conductor patterns 21a, 21b, and 23a to 23c are inspected. In order to facilitate understanding of the “substrate inspection apparatus” and the “substrate inspection method”, description on inspection items other than the inspection items related to the capacitive elements 30 and 40 is omitted.

  Next, the control unit 8 controls the measurement unit 5 to measure the physical quantity defined between the inspection points P and P for each inspection step in the inspection procedure data D0 stored in the storage unit 9. Let In this case, in the inspection step (inspection between inspection points P1 and P2) related to the capacitive element 30, the measurement unit 5 first controls the scanner 4 and is probed to the inspection points P1 and P2 according to the control of the control unit 8. A pair of inspection probes 11, 11 are connected to the measurement unit 5. Next, as an example, the measurement unit 5 applies a constant voltage for measurement between the inspection points P1 and P2 via the probes 11a and 11a of both inspection probes 11 and 11, and in that state, for both inspections. A current value flowing between the probes 11b and 11b of the probes 11 and 11 is measured. Subsequently, the measuring unit 5 determines the inspection points P1 and P2 based on the voltage value (voltage waveform) of the applied constant voltage, the measured current value (current waveform), and the phase difference between the voltage waveform and the current waveform. A capacitance and a dielectric loss tangent are measured (calculated), and the measurement result is output to the control unit 8.

  In response to this, the control unit 8 records the “lower limit value and upper limit value for pass / fail judgment based on capacitance” and “pass / fail based on dielectric tangent” recorded in the test step of the capacitive element 30 in the test procedure data D0. Based on the “lower limit value and upper limit value for determination” and the measurement results (capacitance and dielectric loss tangent values) output from the measurement unit 5, there is a defect between the conductor patterns 21a and 21b (capacitive element 30). Determine if it has occurred.

  In this case, as shown in FIG. 3, poor soldering between the connection electrode 32a and the conductor pattern 21a to which the connection electrode 32a should be connected (the solder 22a is incomplete with respect to the connection electrode 32a). Connection failure X1) that is in contact with each other or when the connection electrode 32b and the conductor pattern 21b to which the connection electrode 32b is to be connected are not properly soldered (the solder 22b is a conductor pattern). When a connection failure X2) is in contact with 21b in an incomplete state, the resistance between the inspection points P1 and P2 becomes larger than when these failures do not occur. For this reason, when the defect of the example shown to the figure has arisen, the dielectric loss tangent between the test | inspection points P1, P2 measured by the measurement part 5 becomes a large value exceeding an upper limit.

  As shown in FIG. 4, when a crack X3 is generated in the solder 22a for connecting the connection electrode 32a and the conductor pattern 21a, or when a crack X4 is generated in the body 31 of the capacitive element 30 The resistance between the inspection points P1 and P2 becomes larger than when these defects do not occur. For this reason, even when the defect of the example shown in the figure occurs, the dielectric loss tangent between the inspection points P1 and P2 measured by the measuring unit 5 exceeds the upper limit value and becomes a large value. Therefore, when the dielectric loss tangent between the inspection points P1 and P2 measured by the measurement unit 5 exceeds the upper limit value and is a large value (“when the dielectric loss tangent exceeding the predetermined value is measured” ”) Is determined as a defect between the conductor patterns 21a and 21b, and the determination result is stored in the inspection result data D1 of the storage unit 9 as the inspection result for the inspection step of the inspection points P1 and P2. Record.

  Further, the connection electrodes X1 and X2 and the cracks X3 and X4 do not occur and the connection electrodes of the good capacitive element are properly soldered (connected) to the conductor patterns 21a and 21b. If the capacitive element is a different product (an element having a capacitance different from that of the capacitive element 30), the capacitance between the inspection points P1 and P2 exceeds the upper limit value and becomes a large value. Or the capacitance between the inspection points P1 and P2 may be lower than the lower limit value and become a small value. Therefore, when the electrostatic capacitance between the inspection points P1 and P2 measured by the measurement unit 5 exceeds the upper limit value or falls below the lower limit value (“predetermined upper limit value”). In the case of “when an electrostatic capacity exceeding 1 and an electrostatic capacity lower than a predetermined lower limit value is measured” is determined), it is determined that a defect has occurred between the conductor patterns 21a and 21b. The result is recorded in the inspection result data D1 of the storage unit 9 as the inspection result for the inspection step of the inspection points P1 and P2.

  On the other hand, as shown in FIG. 2, both the connection electrodes 32a and 21b in the good capacitive element 30 are not formed on the conductor patterns 21a and 21b without causing defects such as the above-described connection failures X1 and X2 and cracks X3 and X4. When 32b is normally soldered (connected), both values of the dielectric loss tangent and the capacitance between the inspection points P1 and P2 are the lower limit value and the upper limit value, respectively. Therefore, the control unit 8 has the conductor patterns 21a and 21b when the values of the dielectric loss tangent and the capacitance between the inspection points P1 and P2 measured by the measuring unit 5 are both lower limit values and lower limit values, respectively. It is determined that there is no defect between the two, and the determination result is recorded in the inspection result data D1 of the storage unit 9 as the inspection result for the inspection steps of the inspection points P1, P2.

  In the inspection step (inspection between inspection points P3 and P4) related to the capacitive element 40, the measurement unit 5 first controls the scanner 4 and is probed to the inspection points P3 and P4 according to the control of the control unit 8. A pair of inspection probes 11, 11 are connected to the measurement unit 5. Next, the measurement unit 5 measures (calculates) the capacitance and dielectric loss tangent between the inspection points P3 and P4 in the same manner as in the measurement process between the inspection points P1 and P2 described above, and measures the measurement. The result is output to the control unit 8. In response to this, the control unit 8 records the “lower limit value and upper limit value for pass / fail judgment based on capacitance” and “pass / fail based on dielectric tangent” recorded in the test step of the capacitive element 40 in the test procedure data D0. Based on the “lower limit value and upper limit value for determination” and the measurement results (capacitance and dielectric loss tangent values) output from the measurement unit 5, there is a defect between the conductor patterns 23c and 23b (capacitive element 40). Determine if it has occurred.

  In this case, as shown in FIG. 6, when a connection failure X5 occurs between the conductor pattern 23a to which the connection electrode 42a is connected and the conductor pattern 23c to be connected to the conductor pattern 23a ( Example of defective formation of conductor pattern 23c), or when connection failure X6 occurs between connection electrode 42b and conductor pattern 23b to which this connection electrode 42b should be connected (conductor pattern 23b) In the example in which the formation defects are generated), the resistance value between the inspection points P3 and P4 is larger than when these defects are not generated. For this reason, when the defect of the example shown to the figure has arisen, the dielectric loss tangent between the test | inspection points P3 and P4 measured by the measurement part 5 becomes a big value exceeding an upper limit.

  Similarly, as shown in FIG. 7, when a connection failure X7 occurs between the connection electrode 42a and the conductor pattern 23a to which the connection electrode 42a should be connected (the connection electrode 42a is a conductor). In an example in which the capacitive element 40 is built in a state separated from the pattern 23a), the resistance value between the inspection points P3 and P4 becomes larger than when such a defect does not occur. Further, as shown in FIG. 8, when the crack X8 occurs in the body 41 of the capacitive element 40, the resistance value between the inspection points P3 and P4 becomes larger than when such a defect does not occur. . For this reason, when the defect shown in FIGS. 7 and 8 occurs, the dielectric loss tangent between the inspection points P3 and P4 measured by the measurement unit 5 exceeds the upper limit value and becomes a large value.

  Therefore, when the dielectric loss tangent between the inspection points P3 and P4 measured by the measurement unit 5 exceeds the upper limit value and is a large value ("when the dielectric loss tangent exceeding the predetermined value is measured" Is determined as a defect between the conductor patterns 23c and 23b, and the determination result is used as an inspection result for the inspection step of the inspection points P3 and P4. Record in data D1.

  Further, the connection electrodes of the non-defective capacitive element are normally soldered (connected) to the conductor patterns 23a and 23b without causing the defects such as the connection defects X5 to X7 and the crack X8. At the same time, even if the conductor patterns 23a and 23c are normally connected, if the capacitive element is a different product (an element having a capacitance different from that of the capacitive element 40), the static pattern between the inspection points P3 and P4. The capacitance exceeds the upper limit value and becomes a large value, or the capacitance between the inspection points P3 and P4 falls below the lower limit value and becomes a small value. Therefore, when the electrostatic capacitance between the inspection points P3 and P4 measured by the measurement unit 5 exceeds the upper limit value or falls below the lower limit value (“predetermined upper limit value” In another example of “when a capacitance exceeding 1 and a capacitance lower than a predetermined lower limit is measured”, it is determined that a defect has occurred between the conductor patterns 23c and 23b, The determination result is recorded in the inspection result data D1 of the storage unit 9 as the inspection result for the inspection steps of the inspection points P3 and P4.

  On the other hand, as shown in FIG. 5, the connection electrodes X5 to X7, cracks X8 and the like do not occur, and the connection electrodes of the good capacitive elements are soldered to the conductor patterns 23a and 23b normally. When the conductor patterns 23a and 23c are normally connected, both the dielectric loss tangent and the capacitance between the inspection points P3 and P4 are not less than the lower limit and not more than the upper limit, respectively. Value. Therefore, the control unit 8 determines the conductor patterns 23c and 23b when both values of the dielectric loss tangent and the capacitance between the inspection points P3 and P4 measured by the measurement unit 5 are the lower limit value and the upper limit value, respectively. It is determined that there is no defect between the two, and the determination result is recorded in the inspection result data D1 of the storage unit 9 as the inspection result for the inspection steps of the inspection points P3 and P4.

  Thereafter, the control unit 8 controls the measurement unit 5 according to the inspection procedure data D0 to measure various “physical quantities (electrical parameters)” for other inspection points P and P, and also performs measurement by the measurement unit 5. Based on the results, the presence or absence of defects related to various electronic components and conductor patterns is inspected. In addition, when all the inspections in each inspection step of the inspection procedure data D0 are completed, the control unit 8 controls the moving mechanism 3 to separate the inspection jig 10 from the inspection target substrate 20 and the inspection result data. The inspection result based on D1 is displayed on the display unit 7, and the inspection processing for the inspection target substrate 20 is completed.

  Thus, in this substrate inspection apparatus 1 and the substrate inspection method by the substrate inspection apparatus 1, the inspection jig 10 is inspected when inspecting the inspection target substrate 20 on which the capacitive element 30 (or the capacitive element 40) is mounted. Is moved with respect to the inspection target substrate 20 to cause the inspection point P1 (or inspection point P3) to probe one of the inspection probes 11 and to inspect the inspection point P2 (or inspection point P4). Probing the other one of the inspection probes 11 and measuring the dielectric loss tangent between the inspection point P1 (or inspection point P3) and the inspection point P2 (or inspection point P4) 1 ”is performed, and when a dielectric loss tangent exceeding a predetermined value is measured, between the conductor patterns 21a and 21b (or Determine the conductor pattern 23c, it is defective 23b between) has occurred.

  Therefore, according to the substrate inspection apparatus 1 and the substrate inspection method by the substrate inspection apparatus 1, the connection electrodes 32a of the capacitive element 30 are formed by only two inspection probes 11 probed at the inspection points P1 and P2. It is possible to inspect whether or not there is a connection failure between 32b and the conductor patterns 21a and 21b, and whether or not the capacitive element 30 is broken, such as cracks, and probe the inspection points P3 and P4. Whether or not there is a connection failure between the connection electrodes 42a and 42b of the capacitive element 40 and the conductor patterns 23a and 23b and between the conductor patterns 23a and 23c, using only the two inspection probes 11. Since it is possible to inspect whether or not the capacitive element 40 is damaged such as a crack, the inspection is performed for inspecting the capacitive elements 30 and 40. Only minute small number of inspection probe 11 be disposed immediately 10, it is possible to reduce the manufacturing cost of the inspection jig 10, thus, it is possible to sufficiently reduce the inspection cost of inspection target board 20. In addition, it is possible to reliably inspect whether or not the “internal capacitive element 40”, in which the inspection probe 11 cannot be directly probed to the connection electrodes 42a and 42b, has a connection failure.

  Moreover, in this board | substrate inspection apparatus 1 and the board | substrate inspection method by the board | substrate inspection apparatus 1, at the time of the test | inspection of the test object board | substrate 20 with which the capacitive elements 30 and 40 were mounted, one inspection point P1 (or inspection point P3). The probe 11 for inspection is probed, and the inspection point P2 (or inspection point P4) is probed with another inspection probe 11, and the inspection point P1 (or inspection point P3) and inspection point P2 (or , The “second measurement process” for measuring the capacitance between the inspection point P4) and the capacitance exceeding the predefined upper limit value and the capacitance falling below the predefined lower limit value Is measured, the inspection point P1 (or inspection point P3) and the inspection point P2 (or inspection point P4) It is determined that failure has occurred in.

  Therefore, according to the substrate inspection apparatus 1 and the substrate inspection method by the substrate inspection apparatus 1, a pair of terminals used for inspecting the presence or absence of connection failure between the inspection points P1 and P2 and the presence or absence of damage to the capacitive element 30. The inspection probes 11 and 11 can be used to inspect whether or not the capacitive element 30 is a different product, whether there is a connection failure between the inspection points P3 and P4, or damage to the capacitive element 40. Since it is possible to inspect whether or not the capacitive element 40 is different using the pair of inspection probes 11 and 11 used for inspecting the presence or absence, the capacitive elements 30 and 40 are different. Therefore, the manufacturing cost of the inspection jig 10 can be further reduced by the amount that it is not necessary to separately provide another inspection probe 11 for inspecting whether or not the inspection jig 10 is in the state.

  Furthermore, according to the substrate inspection method by the substrate inspection apparatus 1 and the substrate inspection apparatus 1, one electrical operation is performed between the inspection point P1 (or inspection point P3) and the inspection point P2 (or inspection point P4). To measure the capacitance by measuring the dielectric loss tangent and capacitance between the inspection point P1 (or inspection point P3) and the inspection point P2 (or inspection point P4) by inputting and outputting signals. The time required to measure the capacitance and the dielectric loss tangent compared to the configuration in which the constant voltage and the constant voltage for measuring the dielectric loss tangent are separately measured to measure the capacitance and the dielectric loss tangent, respectively. Thus, the time required for the inspection of the inspection target substrate 20 can be sufficiently shortened.

  The configuration of the “substrate inspection apparatus” and the specific procedure of the “substrate inspection method” are not limited to the configuration of the substrate inspection apparatus 1 and the example of the procedure of the substrate inspection method performed by the substrate inspection apparatus 1. For example, the configuration / method of probing each inspection probe 11 to each inspection point P of the inspection target substrate 20 by moving the inspection jig 10 toward the inspection target substrate 20 by the moving mechanism 3 is taken as an example. As described above, the configuration / method of probing each inspection probe 11 to each inspection point P by moving the inspection target substrate 20 toward the inspection jig 10 fixedly disposed at a predetermined position, A configuration in which each inspection probe 11 is probed at each inspection point P by moving the inspection target substrate 20 toward the inspection jig 10 while moving the inspection jig 10 toward the inspection target substrate 20. The method can also be adopted. Even when such a configuration is adopted, the same effects as those of the substrate inspection apparatus 1 and the substrate inspection method by the substrate inspection apparatus 1 can be obtained.

  Further, the inspection target substrate 20 is inspected by moving the inspection jig 10 provided with a plurality of inspection probes 11 according to the arrangement of the inspection points P defined on the inspection target substrate 20 by the moving mechanism 3. Although the configuration / method has been described as an example, instead of the inspection jig 10 and the moving mechanism 3, for example, a pair of inspections such as an in-circuit tester (substrate inspection method) disclosed by the applicant. Probes 11 and 11 and an XYZ moving mechanism (not shown) capable of independently moving each inspection probe 11 are disposed, and a “physical quantity” is provided for each inspection step. It is possible to employ a configuration and method for probing the inspection probe 11 at the inspection points P and P necessary for the measurement and inspecting them.

  Also in the board inspection apparatus as described above, the connection electrodes 32a and 32b of the capacitive element 30 and the conductor pattern 21a can be obtained by a single probing operation for probing the pair of inspection probes 11 and 11 to the inspection points P1 and P2. , 21b, whether or not there is a connection failure, and whether or not the capacitive element 30 is broken, such as a crack, is detected, and the pair of inspection probes 11, 11 is connected to the inspection point P3. Whether or not there is a connection failure between the connection electrodes 42a and 42b of the capacitive element 40 and the conductor patterns 23a and 23b and between the conductor patterns 23a and 23c by only one probing operation for probing by P4. Since it is possible to inspect whether or not the capacitive element 40 is damaged such as cracks, the capacitive elements 30 and 40 are detected. The results can be sufficiently reduced probing times for, it is possible to sufficiently reduce the time required for the inspection of the inspection target board 20.

  Further, in order to inspect the presence or absence of a connection failure or the damage of the capacitive element 30, the capacitive element 30 is different due to a pair of inspection probes 11 and 11 probed at the inspection points P1 and P2, respectively. It is possible to inspect whether or not there is a pair of inspection probes 11 and 11 probed at inspection points P3 and P4, respectively, in order to inspect whether there is a connection failure or damage to the capacitive element 40. Since it is possible to inspect whether or not the capacitive element 40 is different, it is possible to inspect whether or not the capacitive elements 30 and 40 are different. The time required for the inspection of the inspection target substrate 20 can be further shortened by the amount that it is not necessary to probe the inspection probes 11 and 11 at the inspection point P different from the above.

DESCRIPTION OF SYMBOLS 1 Board | substrate inspection apparatus 3 Movement mechanism 5 Measuring part 8 Control part 9 Memory | storage part 10 Inspection jig | tool 11 Inspection probe 11a, 11b Probe 20 Inspection object board | substrate 21a, 21b, 23a-23c Conductor pattern 22a, 22b Solder 30,40 Capacity Conductive element 31, 41 Body 32a, 32b, 42a, 42b Connection electrode D0 Inspection procedure data D1 Inspection result data P1-P4 Inspection point X1, X2, X5-X7 Connection failure X3, X4, X8 Crack

Claims (4)

At least one pair of inspection probes to be probed at a plurality of inspection points defined on the inspection target substrate on which the capacitive element is mounted, and at least one of each inspection probe and the inspection target substrate is moved with respect to the other A physical mechanism between each inspection point based on a moving mechanism for probing each inspection probe to each inspection point and an electric signal input / output to / from each inspection point via each inspection probe An inspection process for controlling the at least one movement by the moving mechanism and the measurement of the physical quantity by the measurement unit and determining the quality between the inspection points based on the measurement result of the measurement unit A board inspection apparatus comprising:
The inspection processing unit is connected to one connection electrode in the capacitive element by controlling the moving mechanism to move the at least one relative to the other during the inspection of the inspection target substrate. Probing one of the inspection probes to the inspection point defined on the first connecting conductor, and the other connection electrode of the capacitive element should be connected Probing another one of the inspection probes to the inspection point defined on the second connecting conductor portion, and controlling the measuring portion on the first connecting conductor portion A first measurement process for measuring a dielectric loss tangent between the inspection point of the second connection conductor portion and the inspection point on the second connection conductor portion as the physical quantity is executed by the measurement portion. When the dielectric loss tangent of greater than a defined value is measured, the first substrate inspecting apparatus for determining a failure occurs between the connecting conductor portion and the second connecting conductor part.   The inspection processing section controls the moving mechanism to inspect the one inspection probe on the first connection conductor portion during the inspection of the inspection target substrate, and the second inspection probe. Probing the other one inspection probe to the inspection point on the connecting conductor portion and controlling the measuring portion to connect the inspection point and the second connection on the first connecting conductor portion Causing the second measurement process to measure the capacitance between the inspection point on the conductor part as the physical quantity, the capacitance exceeding the upper limit value preliminarily defined by the measurement unit, and the preliminarily defined The substrate inspection according to claim 1, wherein when a capacitance lower than a lower limit value is measured, it is determined that a defect has occurred between the first connecting conductor portion and the second connecting conductor portion. apparatus.   The inspection processing unit controls the measurement unit to perform one electrical signal between the inspection point on the first connecting conductor portion and the inspection point on the second connecting conductor portion. The substrate inspection apparatus according to claim 2, wherein the dielectric loss tangent and the capacitance between the inspection points are respectively measured by input / output. At least one of a pair of inspection probes probed at a plurality of inspection points defined on the inspection target substrate on which the capacitive element is mounted and the inspection target substrate is moved with respect to the other to each inspection point. Probing each inspection probe and measuring the physical quantity between the inspection points based on the electrical signals input to and output from the inspection points via the inspection probes. A substrate inspection method for determining pass / fail between each inspection point based on:
At the time of inspection of the substrate to be inspected, the at least one is moved with respect to the other, whereby one of the connection electrodes in the capacitive element is defined on the first connection conductor portion to be connected. Probing one of the inspection probes to the inspection point, and the other connection electrode of the capacitive element is defined on the second connection conductor portion to be connected Probing the inspection point with another one of the inspection probes, and the inspection point on the first connection conductor and the inspection point on the second connection conductor. A first measurement process for measuring a dielectric loss tangent between the first connection conductor and the front when a dielectric loss tangent exceeding a predetermined value is measured. Substrate inspection method to determine the failure occurs between the second connecting conductor part.

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