JP2014017367A - Semiconductor device - Google Patents

Abstract

A low profile semiconductor device is provided at low cost.
A semiconductor device includes a semiconductor element, an insulating resin portion provided so as to be in contact with a back surface of the semiconductor element, and a sealing for sealing the semiconductor element and the insulating resin portion. The material 4 is provided. The insulating resin portion 3 is exposed on the back surface 1 b of the semiconductor device 1. The semiconductor element 2 includes a high back portion 7 having a distance D1 between the surface 1a of the semiconductor device 1 and a low back portion 8 having a distance D2 greater than the distance D1 between the surface 1a of the semiconductor device 1. . The insulating resin portion 3 extends from the back surface 2 b of the semiconductor element 2 to the surface 8 a of the low profile portion 8.
[Selection] Figure 2

Description

  The present invention relates to a semiconductor device.

  As this type of technology, Patent Document 1 discloses a semiconductor device that does not require a die pad and is thin. This semiconductor device has a structure in which an insulating resin layer previously coated on the back surface of a semiconductor element is exposed on the back surface of the semiconductor device. To manufacture this semiconductor device, (1) an insulating resin layer is coated on a semiconductor wafer, and (2) the semiconductor wafer is separated into pieces by dicing to obtain a semiconductor element. Next, (3) a semiconductor element is bonded to a predetermined area on a resin film on which a lead frame is previously arranged. Then, (4) wire bonding is performed and sealing is performed with an epoxy resin or the like, and (5) the resin film is peeled off. Finally, (6) a semiconductor device is obtained by dividing by a dicing device.

JP 2005-294443 A

  However, the configuration of Patent Document 1 requires a special process in which a die attach film (insulating resin layer) is attached to the back surface of the semiconductor wafer and then separated into pieces by dicing. As a result, the cost of the semiconductor device has been increased.

  Other problems and novel features will become apparent from the description of the specification and the accompanying drawings.

According to a first aspect, a semiconductor element, an insulating resin portion provided so as to be in contact with a back surface of the semiconductor element, and a sealing material that seals the semiconductor element and the insulating resin portion, The insulating resin portion is exposed on the back surface of the semiconductor device, the semiconductor element has a high-back portion having a distance D1 between the semiconductor device and the semiconductor device, and the semiconductor A low-back portion having a distance D2 larger than the distance D1 between the front surface of the device, and the insulating resin portion extends from the back surface of the semiconductor element to the surface of the low-back portion. A semiconductor device is provided.
According to a second aspect, a semiconductor element, an insulating resin portion provided so as to be in contact with the back surface of the semiconductor element, and a sealing material that seals the semiconductor element and the insulating resin portion, The insulating resin portion is exposed on the back surface of the semiconductor device, the semiconductor element has a high-back portion having a distance D1 between the semiconductor device and the semiconductor device, and the semiconductor A low back portion having a distance D2 larger than the distance D1 between the front surface of the device, and the insulating resin portion is disposed on the back surface of the semiconductor element, and the low surface portion. A semiconductor device is provided that includes a low-profile surface portion disposed on the surface of the back portion, and a connecting portion that couples the element back surface portion and the low-profile surface portion.
According to a third aspect, a semiconductor element, an insulating resin portion provided so as to be in contact with the back surface of the semiconductor element, and a sealing material that seals the semiconductor element and the insulating resin portion, The insulating resin portion is exposed on a back surface of the semiconductor device, and the semiconductor element includes details located on the front surface side of the semiconductor device, and the back surface side of the semiconductor device. The insulating resin portion is disposed on the back surface of the semiconductor element, and the anchor portion wraps around the thick portion of the semiconductor element. And a semiconductor device configured to include:

  A low-profile semiconductor device can be provided at low cost.

FIG. 1 is a cross-sectional view of a semiconductor device. (First embodiment) FIG. 2 is a cross-sectional view of the semiconductor device, and hatching is omitted for explaining the shape. (First embodiment) FIG. 3 is a cross-sectional view of the semiconductor device, and hatching is omitted for explaining the shape. (First embodiment) FIG. 4 is a bottom view of the semiconductor device. (First embodiment) FIG. 5 (a) is a cross-sectional view showing a state in which an insulating paste is applied on a resin film. FIG. 5 (b) is a cross-sectional view showing a state in which a semiconductor element is mounted on an insulating paste. FIG. 5 (c) is a cross-sectional view showing a state of being collectively sealed after wire bonding. (First embodiment) FIG. 6 (d) is a cross-sectional view showing a state where the resin film is peeled off. FIG. 6 (e) is a cross-sectional view showing a state where the resin film is peeled off. FIG. 6 (f) is a cross-sectional view showing a semiconductor device obtained by individual cutting. (First embodiment) FIG. 7 is a cross-sectional view of the semiconductor device. (Comparative example) FIG. 8 is a cross-sectional view showing a state before the resin film is peeled off. (Comparative example) FIG. 9 is a cross-sectional view showing a state where the resin film is peeled off. (Comparative example) FIG. 10 is a cross-sectional view of the semiconductor device. (Second Embodiment) FIG. 11 is a cross-sectional view of the semiconductor device. (Third embodiment)

(First embodiment)
As shown in FIG. 1, the semiconductor device 1 includes a semiconductor element 2, an insulating resin portion 3, a sealing material 4, a plurality of external terminals 5, and a plurality of wires 6.

  The semiconductor device 1 has a front surface 1a, a back surface 1b, and a side surface 1c. The back surface 1b is a surface opposite to the front surface 1a. The front surface 1a and the back surface 1b are parallel to each other. The side surface 1c is a surface orthogonal to the front surface 1a and the back surface 1b.

  As shown in FIG. 2, the semiconductor element 2 has a distance D2 larger than the distance D1 between the high-back portion 7 having a distance D1 between the surface 1a of the semiconductor device 1 and the surface 1a of the semiconductor device 1. And a low back portion 8. The semiconductor element 2 has a tapered shape that protrudes from the back surface 1 b of the semiconductor device 1 toward the front surface 1 a by having the high back portion 7 and the low back portion 8. The low back portion 8 is formed around the high back portion 7. The high-back portion 7 has a front surface 7a, a back surface 7b, and an outer peripheral surface 7c. The surface 7 a of the high-back portion 7 is a surface on the surface 1 a side of the semiconductor device 1. The back surface 7 b of the high-profile portion 7 is a surface on the back surface 1 b side of the semiconductor device 1. The low-back portion 8 has a front surface 8a, a back surface 8b, and an outer peripheral surface 8c. The surface 8 a of the low profile portion 8 is a surface on the surface 1 a side of the semiconductor device 1. The back surface 8 b of the low profile portion 8 is a surface on the back surface 1 b side of the semiconductor device 1. The distance D1 is a distance between the surface 1a of the semiconductor device 1 and the surface 7a of the high-back portion 7. The distance D2 is a distance between the surface 1a of the semiconductor device 1 and the surface 8a of the low profile portion 8. In this embodiment, D1 <D2 is established. The surface 7a of the high back portion 7 and the surface 8a of the low back portion 8 are parallel to each other. The surface 7a of the high-back portion 7 and the surface 8a of the low-back portion 8 are not the same surface. The back surface 7b of the high profile portion 7 and the back surface 8b of the low profile portion 8 are parallel to each other. The back surface 7b of the high profile portion 7 and the back surface 8b of the low profile portion 8 are on the same plane. A plurality of electrodes 2 a of the semiconductor element 2 are formed on the surface 7 a of the high-back portion 7.

  From another viewpoint, as shown in FIG. 3, the semiconductor element 2 includes a detail 9 positioned on the front surface 1 a side of the semiconductor device 1 and a back surface 1 b side of the semiconductor device 1, and a thicker thickness than the detail 9. Part 10. The semiconductor element 2 has a detail 9 and a thick portion 10, and thus has a tapered shape that protrudes from the back surface 1 b to the front surface 1 a of the semiconductor device 1. The detail 9 has a surface 9a and an outer peripheral surface 9c. The surface 9 a of the detail 9 is a surface on the surface 1 a side of the semiconductor device 1. The thick portion 10 has a front surface 10a, a back surface 10b, and an outer peripheral surface 10c. The surface 10 a of the thick part 10 is a surface on the surface 1 a side of the semiconductor device 1. The back surface 10 b of the thick part 10 is a surface on the back surface 1 b side of the semiconductor device 1. A plurality of electrodes 2 a of the semiconductor element 2 are formed on the surface 9 a of the detail 9.

  The semiconductor element 2 has a back surface 2b. In FIG. 2, the back surface 2 b of the semiconductor element 2 is constituted by a back surface 7 b of the high-back portion 7 and a back surface 8 b of the low-back portion 8. In FIG. 3, the back surface 2 b of the semiconductor element 2 corresponds to the back surface 10 b of the thick part 10.

As shown in FIG. 1, the insulating resin portion 3 is formed of an insulating resin material such as epoxy or silicone, and is provided in contact with the back surface 2 b of the semiconductor element 2. Specifically, as shown in FIG. 2, the insulating resin portion 3 is formed to extend from the back surface 2 b of the semiconductor element 2 to the surface 8 a of the low profile portion 8. In other words, the insulating resin portion 3 includes an element back surface portion 3a disposed on the back surface 2b of the semiconductor element 2, a low back surface portion 3b disposed on the surface 8a of the low back portion 8, and an element back surface portion. 3a and the connection part 3c which connects the low-profile surface part 3b.

  Referring to FIG. 3, the insulating resin portion 3 includes an element back surface portion 3 a disposed on the back surface 2 b of the semiconductor element 2 and an anchor portion 3 d that wraps the thick portion 10 of the semiconductor element 2. Has been. The anchor portion 3d corresponds to the low-profile surface portion 3b and the connecting portion 3c in FIG. The element back surface portion 3 a and the anchor portion 3 d of the insulating resin portion 3 sandwich the thick portion 10 in a direction orthogonal to the surface 1 a of the semiconductor device 1. The anchor portion 3d is caught on the surface 10a of the thick portion 10. The anchor portion 3d is formed to extend in an L shape along the surface 10a and the outer peripheral surface 10c of the thick portion 10.

  And the insulating resin part 3 is exposed to the back surface 1b of the semiconductor device 1, as shown in FIGS. Accordingly, when viewed from the semiconductor element 2, only the insulating resin portion 3 exists on the back surface 1 b side of the semiconductor device 1, thereby forming a so-called islandless semiconductor device.

  As shown in FIG. 1, the sealing material 4 seals the semiconductor element 2, the insulating resin portion 3, the plurality of external terminals 5, and the plurality of wires 6.

  The plurality of wires 6 are for connecting the plurality of electrodes 2 a of the semiconductor element 2 and the plurality of external terminals 5.

(Production method)
Next, a method for manufacturing the semiconductor device 1 will be described.

As shown in FIG. 5 (a), providing a resin film 11 where the polyimide or acrylic with product cost, for example. A lead frame 12 is set on the resin film 11. At this time, the lead frame 12 is fixed to the resin film 11 by being attached to the resin film 11 by heating or pressing.

Next, an appropriate amount of insulating resin paste 13 is applied between the lead frames 12 on the resin film 11. The insulating resin paste 13 is made of, for example , epoxy or silicone . The viscosity of the insulating resin paste 13 is preferably 10 to 30 [Pa · s] .

  Next, as shown in FIG. 5B, the semiconductor element 2 that has been step-cut in advance by a step-cut device is placed on the resin film 11. Specifically, the semiconductor element 2 is strongly pressed against the insulating resin paste 13.

  Next, as shown in FIG.5 (c), after performing wire bonding with a wire bonding apparatus, it seals by package sealing.

  Next, as shown in FIG. 6D, the resin film 11 is peeled off and removed.

  Next, as shown in FIG. 6E, the semiconductor device 1 shown in FIG. 6F is obtained by cutting the individual pieces with a blade (not shown).

  Here, a comparative example of the present embodiment will be described with reference to FIGS. In the semiconductor device 100 of FIG. 7, the insulating resin portion 101 is formed in a layer shape. In this case, as shown in FIG. 8, the adhesive force X between the organic insulating resin portion 101 and the organic resin film 102 is the adhesion between the organic insulating resin portion 101 and the inorganic semiconductor element 103. Over force Y. Therefore, when the resin film 102 is peeled off, the insulating resin portion 101 may remain on the resin film 102 and peel from the semiconductor element 103 as shown in FIG. As a result, the semiconductor element 103 is exposed to the outside of the semiconductor device 1 and cannot perform a desired function.

  On the other hand, in this embodiment, as shown in FIG. 2, the element back surface portion 3 a is hardly peeled off from the back surface 2 b of the semiconductor element 2 due to the anchor effect by the low-profile surface portion 3 b and the connecting portion 3 c. As shown in FIG. 3, the element back surface portion 3 a is hardly peeled off from the back surface 2 b of the semiconductor element 2 due to the anchor effect by the anchor portion 3 d. Furthermore, since the contact area between the semiconductor element 2 and the insulating resin part 3 is large due to the presence of the low-profile surface part 3b, the connecting part 3c, and the anchor part 3d, the insulating resin part 3 is difficult to peel off from the semiconductor element 2. It has become.

Although the first embodiment has been described above, the first embodiment has the following features.
(1) The semiconductor device 1 includes a semiconductor element 2, an insulating resin part 3 provided so as to be in contact with the back surface 2b of the semiconductor element 2, and a sealing material for sealing the semiconductor element 2 and the insulating resin part 3. 4. The insulating resin portion 3 is exposed on the back surface 1 b of the semiconductor device 1. The semiconductor element 2 includes a high back portion 7 having a distance D1 between the surface 1a of the semiconductor device 1 and a low back portion 8 having a distance D2 greater than the distance D1 between the surface 1a of the semiconductor device 1. . The insulating resin portion 3 extends from the back surface 2 b of the semiconductor element 2 to the surface 8 a of the low profile portion 8.
(2) In other words, the insulating resin portion 3 includes the element back surface portion 3a disposed on the back surface 2b of the semiconductor element 2, the low profile surface portion 3b disposed on the surface 8a of the low profile portion 8, and the element back surface portion. 3a and the connection part 3c which connects the low-profile surface part 3b.
(3) The semiconductor device 1 includes a semiconductor element 2, an insulating resin portion 3 provided so as to be in contact with the back surface 2b of the semiconductor element 2, and a sealing material that seals the semiconductor element 2 and the insulating resin portion 3. 4. The insulating resin portion 3 is exposed on the back surface 1 b of the semiconductor device 1. The semiconductor element 2 has a detail 9 located on the front surface 1 a side of the semiconductor device 1 and a thick portion 10 located on the back surface 1 b side of the semiconductor device 1 and thicker than the detail 9. The insulating resin portion 3 includes an element back surface portion 3 a disposed on the back surface 2 b of the semiconductor element 2 and an anchor portion 3 d that wraps the thick portion 10 of the semiconductor element 2.

  Further, since the insulating resin portion 3 does not reach the electrode 2a of the semiconductor element 2, wire bonding to the electrode 2a of the semiconductor element 2 is not hindered.

(Second Embodiment)
Next, a second embodiment will be described with reference to FIG. Here, the present embodiment will be described with a focus on differences from the first embodiment, and overlapping descriptions will be omitted as appropriate. In addition, in principle, the same reference numerals are assigned to components corresponding to the respective components of the first embodiment.

  In the present embodiment, a recess 15 that is recessed in a direction away from the surface 1 a of the semiconductor device 1 is formed on the surface 8 a of the low-profile portion 8 (the surface 10 a of the thick portion 10, see also FIG. 3). The recess 15 is formed closer to the semiconductor element 2. The insulating resin part 3 is filled in the hollow part 15. According to the above configuration, since a large contact area between the semiconductor element 2 and the insulating resin portion 3 can be secured, the insulating resin portion 3 is prevented from being peeled off from the semiconductor element 2 when the resin film 11 is peeled off. it can.

(Third embodiment)
Next, a third embodiment will be described with reference to FIG. Here, the present embodiment will be described with a focus on differences from the first embodiment, and overlapping descriptions will be omitted as appropriate. In addition, in principle, the same reference numerals are assigned to components corresponding to the respective components of the first embodiment.

  In the present embodiment, a recess 16 that is recessed in a direction away from the surface 1a of the semiconductor device 1 is formed on the surface 8a of the low-profile portion 8 (the surface 10a of the thick portion 10, see also FIG. 3). The recess 16 is formed on the side far from the semiconductor element 2. The insulating resin part 3 is filled in the hollow part 16. According to the above configuration, since a large contact area between the semiconductor element 2 and the insulating resin portion 3 can be secured, the insulating resin portion 3 is prevented from being peeled off from the semiconductor element 2 when the resin film 11 is peeled off. it can.

  As mentioned above, the invention made by the present inventor has been specifically described based on the embodiments. However, the present invention is not limited to the embodiments already described, and various modifications can be made without departing from the scope of the invention. It goes without saying that it is possible.

DESCRIPTION OF SYMBOLS 1 Semiconductor device 2 Semiconductor element 3 Insulating resin part 4 Sealing material 5 External terminal 6 Wire 7 High back part 8 Low back part 9 Detail 10 Thick part

Claims (9)

A semiconductor element;
An insulating resin portion provided so as to be in contact with the back surface of the semiconductor element;
A sealing material for sealing the semiconductor element and the insulating resin portion;
A semiconductor device comprising:
The insulating resin portion is exposed on the back surface of the semiconductor device,
The semiconductor element has a high-back portion having a distance D1 between the surface of the semiconductor device and a low-back portion having a distance D2 larger than the distance D1 between the surface of the semiconductor device,
The insulating resin portion extends from the back surface of the semiconductor element to the surface of the low profile portion,
Semiconductor device. The semiconductor device according to claim 1,
An external terminal,
A wire connecting the external terminal and the semiconductor element;
Further comprising
An electrode to which the wire is connected is formed on the surface of the high profile portion of the semiconductor element.
Semiconductor device. The semiconductor device according to claim 1,
On the surface of the low-profile portion of the semiconductor element, a recess is formed that is recessed in a direction away from the surface of the semiconductor device.
Semiconductor device. A semiconductor element;
An insulating resin portion provided so as to be in contact with the back surface of the semiconductor element;
A sealing material for sealing the semiconductor element and the insulating resin portion;
A semiconductor device comprising:
The insulating resin portion is exposed on the back surface of the semiconductor device,
The semiconductor element has a high-back portion having a distance D1 between the surface of the semiconductor device and a low-back portion having a distance D2 larger than the distance D1 between the surface of the semiconductor device,
The insulating resin portion includes an element back surface portion disposed on the back surface of the semiconductor element, a low profile surface portion disposed on the surface of the low profile portion, the element back surface portion, and the low profile surface portion. And a connecting portion to be connected,
Semiconductor device. The semiconductor device according to claim 4,
An external terminal,
A wire connecting the external terminal and the semiconductor element;
Further comprising
An electrode to which the wire is connected is formed on the surface of the high profile portion of the semiconductor element.
Semiconductor device. The semiconductor device according to claim 4,
On the surface of the low-profile portion of the semiconductor element, a recess is formed that is recessed in a direction away from the surface of the semiconductor device.
Semiconductor device. A semiconductor element;
An insulating resin portion provided so as to be in contact with the back surface of the semiconductor element;
A sealing material for sealing the semiconductor element and the insulating resin portion;
A semiconductor device comprising:
The insulating resin portion is exposed on the back surface of the semiconductor device,
The semiconductor element has a detail located on the front side of the semiconductor device, and a thick part located on the back side of the semiconductor device and thicker than the detail,
The insulating resin portion includes an element back surface portion disposed on the back surface of the semiconductor element, and an anchor portion that wraps around the thick portion of the semiconductor element.
Semiconductor device. The semiconductor device according to claim 7,
An external terminal,
A wire connecting the external terminal and the semiconductor element;
Further comprising
An electrode to which the wire is connected is formed on the surface of the detail of the semiconductor element.
Semiconductor device. The semiconductor device according to claim 7,
On the surface of the thick part of the semiconductor element, a recess is formed that is recessed in a direction away from the surface of the semiconductor device.
Semiconductor device.

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