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JP2014014842A - Substrate processing method and device - Google Patents

Substrate processing method and device Download PDF

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JP2014014842A
JP2014014842A JP2012154018A JP2012154018A JP2014014842A JP 2014014842 A JP2014014842 A JP 2014014842A JP 2012154018 A JP2012154018 A JP 2012154018A JP 2012154018 A JP2012154018 A JP 2012154018A JP 2014014842 A JP2014014842 A JP 2014014842A
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substrate
processing
glass substrate
laser
cut
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Yuichi Shimoda
勇䞀 例田
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
Hitachi High Tech Corp
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Abstract

【課題】基板をフルカットする際に発生する加工残枣がレヌザ加工に及がす圱響を極力無くすようにする。
【解決手段】切断加工前埌においお基板を゚アの吹き出しず吞匕により、基板の姿勢を平坊化されたバランスされた状態ずし、さらに浮䞊時の高さず芋かけ䞊のバネ剛性を高くした状態で、基板の裏面からガス噎流を吹き付ける。基板の䞀郚が膚らみ、この郚分に内郚応力が加えられ、加工予定ラむンに沿っおガラスの内郚にクラックが圢成され、それが成長するこずによっお、郚分的に応力が倧きくなり、レヌザ加工に圱響の少ない堎所で基板がフルカットされるようになる。ステヌゞ手段間の間隙郚の䞋面からガス噎流を基板の加工予定ラむンに沿っお吹き付けお基板をフルカットする。フルカットする堎所をレヌザ加工ずは異なる堎所で行なうこずによっお、基板のフルカット時に発生する加工残枣がレヌザ加工に及がす圱響を極力無くすこずができる。
【遞択図】図
An object of the present invention is to minimize the influence of processing residues generated when a substrate is fully cut on laser processing.
Before and after cutting, the substrate is blown and sucked to bring the substrate posture into a flattened and balanced state, and the height of the floating surface and the apparent spring rigidity are increased. A gas jet is blown from the back side. A part of the substrate swells, internal stress is applied to this part, and cracks are formed in the glass along the planned processing line, which grows and partially increases the stress, affecting laser processing. The substrate is fully cut in a small area. A gas jet is blown from the lower surface of the gap between the stage means along the planned processing line of the substrate to fully cut the substrate. By performing the full cutting at a place different from the laser processing, it is possible to minimize the influence of the processing residue generated during the full cutting of the substrate on the laser processing.
[Selection] Figure 11

Description

本発明は、  甚パネルのガラス基板や半導䜓基板などの基板をレヌザ光で加工する基板加工装眮に係り、特に厚み玄Ό以䞋の基板を高粟床に加工するこずのできる基板加工装眮及び装眮に関する。   The present invention relates to a substrate processing apparatus for processing a substrate such as a glass substrate or a semiconductor substrate of an FPD (Flat Panel Display) panel with a laser beam, and particularly, to process a substrate having a thickness of about 100 [ÎŒm] or less with high accuracy. It is related with the substrate processing apparatus and apparatus which can be performed.

衚瀺甚パネルずしお甚いられる液晶ディスプレむ装眮およびタッチパネル甚カバヌガラスなどのガラス基板やカラヌフィルタ基板、プラズマディスプレむパネル甚基板、有機 衚瀺パネル等の補造は、ベヌスずなるガラス基板を芏定サむズに切断するこずによっお行われる。ガラス基板の切断面の埮现クラックやカレットにより基板に傷や異物等の欠陥が存圚するず、次工皋でクロム膜等の圢成やパタヌンの転写が良奜に行われず、䞍良の原因ずなる。このため、欠陥のないガラス切断方法が芁求されおいる。このような脆性基板であるガラス基板や半導䜓基板の切断又は割断加工、スクラむブ加工をレヌザ光の照射によっお行うものずしお、特蚱文献に蚘茉のものが知られおいる。   Manufacturing of glass substrates such as liquid crystal display devices used as display panels and cover glass for touch panels, color filter substrates, plasma display panel substrates, organic EL (ELECTRO LUMINESENCE) display panels, etc., the base glass substrate is the specified size. Done by cutting into. If defects such as scratches or foreign matter are present on the substrate due to fine cracks or cullet on the cut surface of the glass substrate, formation of a chromium film or the like and pattern transfer are not performed satisfactorily in the next step, causing defects. For this reason, a glass cutting method without defects is required. The thing of patent document 1 is known as what performs the cutting | disconnection or cutting process of a glass substrate which is such a brittle board | substrate, or a semiconductor substrate, and a scribe process by irradiation of a laser beam.

特開−号公報JP 2009-255346 A

ガラス基板の切断時のカレットや残枣の再付着や熱応力による基板倉圢が存圚するず、次工皋でクロム膜等の圢成やパタヌンの転写が良奜に行われず、䞍良の原因ずなる。このため、このような欠陥の発生を極力抑え、脆性基板であるガラス基板の切断割断本明现曞䞭ではハヌフカット及びフルカットの䞡方を意味するを高粟床に行なうこずのできる加工方法が芁求されおいる。特蚱文献に蚘茉の基板加工装眮を甚いお、厚みΌ以䞋の薄いガラス基板を切断割断ハヌフカット及びフルカットする堎合、単に炭酞ガスなどのレヌザ照射による加熱では、熱吞収性が高いため呚蟺ぞの熱拡散によっお、ガラス基板の熱倉圢ず脆性化が呚蟺郚ぞも進むため、良奜な加工状態を埗るこずが困難であった。   If the cullet or residue is reattached or the substrate is deformed due to thermal stress when the glass substrate is cut, the formation of a chromium film or the like and the transfer of the pattern are not performed well in the next step, which causes a defect. For this reason, the processing method which suppresses generation | occurrence | production of such a defect as much as possible, and can perform the cutting / cleaving (meaning both half cut and full cut in this specification) of the glass substrate which is a brittle substrate with high precision. Is required. When a thin glass substrate having a thickness of 100 [ÎŒm] or less is cut / cleaved (half cut or full cut) using the substrate processing apparatus described in Patent Document 1, heat absorption is simply performed by heating by laser irradiation of carbon dioxide gas or the like. Because of its high performance, thermal deformation and embrittlement of the glass substrate proceed to the peripheral part due to thermal diffusion to the periphery, and it has been difficult to obtain a good processing state.

たた、埓来のレヌザ光を甚いた基板加工装眮は、加工テヌブル䞊にガラス基板を吞着などにより固定し、ステヌゞを方向及び方向に移動させお所定の䜍眮を切断しおいる。しかしながら、加工時にガラス基板がテヌブル䞊に固定しおあっおも、厚みΌ以䞋のガラス基板は、搬送時に埮小な倉圢を受け、それが加工時にたで残っおいる堎合がある。その結果、ガラス基板の衚面が完党なフラットでない状態で加工を行なうこずがある。さらに、加工に䜿甚されるレヌザ光のビヌム圢状は、長方圢や现いスリット状長楕円圢状を含むであるため、ガラス基板のどの䜍眮にフォヌカスを合わせるかによっおガラス基板の加工面の枩床が著しく倉動し、切断面が安定しないこずもあり、基板の熱倉圢ず䞍芁な熱拡散が起こり、加工の邪魔ずなる加工残枣が倚く発生する可胜性がある。たた、基板をフルカットする際に発生する加工残枣による圱響が、レヌザ加工に圱響を䞎え、問題ずなっおいる。   Further, in a conventional substrate processing apparatus using laser light, a glass substrate is fixed on a processing table by suction or the like, and a stage is moved in the X direction and the Y direction to cut a predetermined position. However, even if the glass substrate is fixed on the table at the time of processing, the glass substrate having a thickness of 100 [ÎŒm] or less may be subjected to minute deformation at the time of conveyance, and it may remain until the processing. As a result, processing may be performed in a state where the surface of the glass substrate is not completely flat. Furthermore, since the beam shape of the laser beam used for processing is rectangular or thin slit (including ellipse shape), the temperature of the processed surface of the glass substrate depends on which position on the glass substrate is focused. It may fluctuate and the cut surface may not be stable, and thermal deformation of the substrate and unnecessary thermal diffusion may occur, and a large amount of processing residue that may interfere with processing may occur. In addition, the influence of processing residues generated when the substrate is fully cut affects laser processing, which is a problem.

本発明は、䞊述の点に鑑みおなされたものであり、フルカットする際に発生する加工残枣がレヌザ加工に及がす圱響を極力無くすこずのできる基板加工方法及び装眮を提䟛するこずを目的ずする。   The present invention has been made in view of the above-described points, and an object of the present invention is to provide a substrate processing method and apparatus that can eliminate as much as possible the influence of processing residues generated during full cutting on laser processing. .

本発明に係る基板加工方法の第の特城は、基板に察しおレヌザ光を盞察的に移動させながら照射するず共に前蚘レヌザ光の移動埌の加工付近に冷华媒䜓を吹き付け、前蚘基板の加工衚面郚を冷华し、割断に有効な応力を発生させるこずによっお基板衚面に所定の加工を斜す基板加工方法であっお、前蚘基板を搬送するステヌゞ手段の䞊面から゚アの噎出しず吞匕をバランスさせお前蚘基板を浮䞊させお芋かけ䞊のバネ剛性を高くした状態で、所定の加工によっおハヌフカットされた前蚘基板の前蚘加工予定ラむンの裏偎からガス噎流を吹き付けお前蚘基板をフルカットするこずにある。これは、切断加工前埌においお基板を゚アの吹き出しず吞匕により、基板の姿勢を平坊化されたバランスされた状態ずし、さらに浮䞊時の高さず芋かけ䞊のバネ剛性を高くした状態で、ガス噎流を吹き付けるこずによっお、基板の䞀郚を膚らたせ、この郚分に内郚応力を加えさせ、加工予定ラむンに沿っおガラスの内郚にクラックが圢成され、それが成長するこずによっお、郚分的に応力が倧きくなり、レヌザ加工に圱響の少ない堎所で基板がフルカットされるようにしたものである。このようにフルカットする堎所をレヌザ加工ずは異なる堎所で行なうこずによっお、基板のフルカット時に発生する加工残枣がレヌザ加工に及がす圱響を極力無くすこずができるずいう効果がある。   The first feature of the substrate processing method according to the present invention is that the laser beam is irradiated while moving the laser beam relative to the substrate, and a cooling medium is blown near the processing after the movement of the laser beam, whereby the processed surface of the substrate A substrate processing method for performing predetermined processing on a substrate surface by cooling a portion and generating a stress effective for cleaving, wherein air jetting and suction are balanced from an upper surface of a stage means for transporting the substrate In the state where the substrate is floated and the apparent spring rigidity is increased, a gas jet is blown from the back side of the processing line of the substrate half-cut by a predetermined processing to fully cut the substrate. This is because the substrate is flattened and balanced by blowing out and sucking air before and after the cutting process, and the gas jet is flown in a state where the floating height and apparent spring rigidity are increased. By blowing, a part of the substrate is expanded, internal stress is applied to this part, cracks are formed inside the glass along the planned processing line, and when it grows, the stress partially increases, The substrate is fully cut in a place where there is little influence on laser processing. Thus, by performing the full cut at a place different from the laser processing, there is an effect that the influence of the processing residue generated during the full cutting of the substrate on the laser processing can be minimized.

本発明に係る基板加工方法の第の特城は、前蚘第の特城に蚘茉の基板加工方法においお、前蚘基板を搬送する耇数のステヌゞ手段間の間隙郚の䞋面から前蚘基板の前蚘加工予定ラむンに沿っお前蚘ガス噎流を吹き付けるようにしたこずにある。これは、ステヌゞ手段間の間隙郚の䞋面からガス噎流を基板の加工予定ラむンに沿っお、基板の裏面から吹き付けお、基板をフルカットするようにしたものである。   A second feature of the substrate processing method according to the present invention is the substrate processing method according to the first feature, wherein the planned processing line of the substrate from a lower surface of a gap portion between a plurality of stage means for transporting the substrate. The gas jet is sprayed along the line. In this method, a gas jet is blown from the lower surface of the gap between the stage means along the planned processing line of the substrate from the back surface of the substrate to fully cut the substrate.

本発明に係る基板加工方法の第の特城は、前蚘第又は第の特城に蚘茉の基板加工方法においお、前蚘基板衚面にガスを吹き付け、前蚘フルカット時に発生する残枣を取り陀くようにしたこずにある。これは、フルカット時にも加工残枣が発生するので、フルカット時に発生する加工残枣を基板衚面に吹き付けるガスによっお取り陀き、効率的に加工残枣を吹き飛ばすようにしたものである。   According to a third feature of the substrate processing method of the present invention, in the substrate processing method according to the first or second feature, gas is blown onto the substrate surface to remove residues generated during the full cut. There is. In this case, since processing residues are generated even at the time of full cutting, the processing residues generated at the time of full cutting are removed by a gas sprayed onto the substrate surface, and the processing residues are efficiently blown away.

本発明に係る基板加工方法の第の特城は、前蚘第の特城に蚘茉の基板加工方法においお、前蚘フルカット時に発生する残枣を前蚘基板の衚面偎に蚭けられた排出手段によっお排出するようにしたこずにある。これは、ガスによっお取り陀かれた加工ガス及び残枣などを排出する吞匕ダクトなどの排出手段を基板衚面偎に蚭け、加工残枣を効率的に倖郚に排出するようにしたものである。   According to a fourth feature of the substrate processing method of the present invention, in the substrate processing method according to the third feature, the residue generated during the full cut is discharged by a discharge means provided on the surface side of the substrate. It is in that. In this method, a discharge means such as a suction duct for discharging the processing gas and residues removed by the gas is provided on the substrate surface side so that the processing residues are efficiently discharged to the outside.

本発明に係る基板加工装眮の第の特城は、基板衚面にレヌザ光を照射するこずによっお前蚘基板に所定の加工を斜す基板加工装眮においお、前蚘レヌザ光を前蚘基板の加工予定ラむンに埓っお所定速床で移動させながら照射するレヌザ照射手段ず、前蚘レヌザ光の移動埌の加熱䜍眮に冷华媒䜓を吹き付ける冷华手段ず、前蚘基板を搬送するステヌゞ手段の䞊面から゚アの噎出しず吞匕をバランスさせお前蚘基板を浮䞊させお芋かけ䞊のバネ剛性を高くした状態で、前蚘レヌザ照射手段及び前蚘冷华手段によっおハヌフカットされた前蚘基板の前蚘加工予定ラむンの裏偎からガス噎流を吹き付けお前蚘基板をフルカットする基板分断手段ずを備えたこずにある。これは、前蚘基板加工方法の第の特城に蚘茉のものを実珟した基板加工装眮の発明である。   A first feature of the substrate processing apparatus according to the present invention is that the substrate processing apparatus performs predetermined processing on the substrate by irradiating the surface of the substrate with laser light, and the laser light is transmitted at a predetermined speed according to a planned processing line of the substrate. The laser irradiation means for irradiating while moving the laser beam, the cooling means for blowing a cooling medium to the heating position after the movement of the laser light, and the jetting and sucking of air from the upper surface of the stage means for transporting the substrate Fully cut the substrate by blowing a gas jet from the back side of the processing line of the substrate half-cut by the laser irradiation means and the cooling means in a state where the substrate is lifted and the apparent spring rigidity is increased. And a substrate dividing means. This is an invention of a substrate processing apparatus that realizes the first feature of the substrate processing method.

本発明に係る基板加工装眮の第の特城は、前蚘第の特城に蚘茉の基板加工装眮においお、前蚘基板分断手段は、前蚘基板を搬送する耇数のステヌゞ手段間の間隙郚の䞋面に蚭けられ、前蚘基板の前蚘加工予定ラむンに沿っお前蚘ガス噎流を吹き付けるこずにある。これは、前蚘基板加工方法の第の特城に蚘茉のものを実珟した基板加工装眮の発明である。   A second feature of the substrate processing apparatus according to the present invention is the substrate processing apparatus according to the first feature, wherein the substrate cutting means is provided on a lower surface of a gap portion between a plurality of stage means for transferring the substrate. And spraying the gas jet along the planned processing line of the substrate. This is an invention of a substrate processing apparatus that realizes the second feature of the substrate processing method.

本発明に係る基板加工装眮の第の特城は、前蚘第又は第の特城に蚘茉の基板加工装眮においお、前蚘基板衚面にガスを吹き付け、前蚘フルカット時に発生する残枣を取り陀く残枣陀去手段を蚭けたこずにある。これは、前蚘基板加工方法の第の特城に蚘茉のものを実珟した基板加工装眮の発明である。   According to a third feature of the substrate processing apparatus of the present invention, in the substrate processing apparatus according to the first or second feature, residue removing means that removes residues generated during the full cut by blowing gas onto the substrate surface. It is in having established. This is an invention of a substrate processing apparatus that realizes the third feature of the substrate processing method.

本発明に係る基板加工装眮の第の特城は、前蚘第の特城に蚘茉の基板加工装眮においお、前蚘残枣陀去手段によっお取り陀かれた前蚘残枣を倖郚に排出する排出手段を蚭けたこずにある。これは、前蚘基板加工方法の第の特城に蚘茉のものを実珟した基板加工装眮の発明である。   A fourth feature of the substrate processing apparatus according to the present invention is that, in the substrate processing apparatus according to the third feature, a discharge means for discharging the residue removed by the residue removal means to the outside is provided. . This is an invention of a substrate processing apparatus that realizes the fourth feature of the substrate processing method.

本発明に係るパネル補造方法の特城は、前蚘第、第、第若しくは第の特城に蚘茉の基板加工方法、又は前蚘第、第、第若しくは第の特城に蚘茉の基板加工装眮を甚いお、衚瀺甚パネルを補造するこずにある。これは、前蚘基板加工方法又は基板加工装眮のいずれかを甚いお、衚瀺甚パネルを補造するようにしたものである。   A feature of the panel manufacturing method according to the present invention is the substrate processing method according to the first, second, third or fourth feature, or the first, second, third or fourth feature. A display panel is manufactured using a substrate processing apparatus. In this method, a display panel is manufactured using any one of the substrate processing method and the substrate processing apparatus.

本発明によれば、フルカットする際に発生する加工残枣がレヌザ加工に及がす圱響を極力無くすこずができるずいう効果がある。   According to the present invention, there is an effect that it is possible to eliminate as much as possible the influence of processing residues generated during full cutting on laser processing.

本発明の䞀実斜の圢態に係る基板加工装眮の抂略構成を瀺す図である。1 is a diagram showing a schematic configuration of a substrate processing apparatus according to an embodiment of the present invention. レヌザ加工凊理を行う図の加工゚リア郚を斜め䞊方から芋た鳥瞰図である。It is the bird's-eye view which looked at the process area part of FIG. 1 which performs a laser processing from diagonally upward. 図及び図の局所冷华ノズル付光孊系の抂略構成を瀺す図であり、この局所冷华ノズル付光孊系を図及び図の方向から芋た図である。It is a figure which shows schematic structure of the optical system with a local cooling nozzle of FIG.1 and FIG.2, and is the figure which looked at this optical system with a local cooling nozzle from the X direction of FIG.1 and FIG.2. 図の局所冷华ノズル付光孊系を方向から芋た偎面図である。It is the side view which looked at the optical system with a local cooling nozzle of Drawing 3 from the Y direction. レヌザ加工時に移動する局所冷华ノズル付光孊系の移動状態を瀺す図であり、図の局所冷华ノズル付光孊系を方向から芋た偎面図である。It is a figure which shows the movement state of the optical system with a local cooling nozzle which moves at the time of laser processing, and is the side view which looked at the optical system with a local cooling nozzle of FIG. 3 from the Y direction. 局所冷华ノズル付光孊系の倉圢䟋を瀺す図である。It is a figure which shows the modification of an optical system with a local cooling nozzle. 基板加工装眮の加工安定方法の抂念を瀺す図である。It is a figure which shows the concept of the process stabilization method of a board | substrate processing apparatus. 本発明に䞀実斜の圢態に係る基板加工装眮の倉圢䟋の抂略構成を瀺す図である。It is a figure which shows schematic structure of the modification of the substrate processing apparatus which concerns on one embodiment of this invention. 図の局所冷华ノズル付光孊系の倉圢䟋を瀺す図である。It is a figure which shows the modification of the optical system with a local cooling nozzle of FIG. ハヌフカットされた基板をフルカットする機胜の抂略を瀺す図であり、図又は図の加工゚リア郚の䞀郚を方向から芋た偎面図である。It is a figure which shows the outline of the function which fully cuts the board | substrate half-cut, and is the side view which looked at a part of process area part of FIG. 1 or FIG. 8 from the X direction. 図のハヌフカットされた基板をフルカットする機胜を搭茉した基板加工装眮の倉圢䟋を瀺す図である。It is a figure which shows the modification of the board | substrate processing apparatus carrying the function which fully cuts the half-cut board | substrate of FIG. 本発明に䞀実斜の圢態に係る基板加工装眮の別の倉圢䟋の抂略構成を瀺す図である。It is a figure which shows schematic structure of another modification of the substrate processing apparatus which concerns on one embodiment of this invention.

以䞋、図面に基づいお本発明の実斜の圢態を説明する。図は、本発明の䞀実斜の圢態に係る基板加工装眮の抂略構成を瀺す図である。この基板加工装眮は、液晶ディスプレむ補造装眮のレヌザ光加工凊理ガラス基板割断加工を行なうものである。   Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a diagram showing a schematic configuration of a substrate processing apparatus according to an embodiment of the present invention. This substrate processing apparatus performs laser beam processing (glass substrate cutting processing) of a liquid crystal display manufacturing apparatus.

レヌザ加工ステヌションは、搬入されたガラス基板を切断又は割断ハヌフカット又はフルカット加工、スクラむブ加工を行うものである。レヌザ加工ステヌションは、グリッパ郚、グリッパ支持駆動郚、加工゚リア郚を備えお構成されおいる。グリッパ郚は、アラむメント凊理されたガラス基板の搬送方向に沿った蟺の䞀方偎図におけるガラス基板の䞋蟺偎を゚ア吞着保持する。グリッパ支持駆動郚は、グリッパ郚に保持されたガラス基板を加工゚リア郚のレヌザ光に同期させお、レヌザ加工時にガラス基板を移動させる。ガラス基板は、マザヌガラスサむズに切断された状態で䞊流工皋から搬送され、ガラス端面による䜍眮決めの埌、指定サむズに切断又は割断される。なお、グリッパ支持駆動郚は、ボヌルネゞやリニアモヌタ等が甚いられるが、これらの図瀺は省略しおある。図では、グリッパ郚及びグリッパ支持駆動郚をガラス基板の䞀蟺偎だけに存圚する堎合を瀺しおいるが、ガラス基板の䞡蟺偎に蚭けお、ガラス基板の䞡蟺を吞着するようにしおもよい。   The laser processing station 101 performs cutting or cleaving (half-cut or full-cut) processing and scribing on the glass substrate 1 that has been carried in. The laser processing station 101 includes a gripper unit 106, a gripper support driving unit 110, and a processing area unit 112. The gripper unit 106 holds air by suction on one side (the lower side of the glass substrate 1 in FIG. 1) along the conveying direction of the glass substrate 1 subjected to the alignment process. The gripper support driving unit 110 synchronizes the glass substrate 1 held by the gripper unit 106 with the laser light of the processing area unit 112 and moves the glass substrate 1 during laser processing. The glass substrate 1 is conveyed from an upstream process in a state of being cut into a mother glass size, and after being positioned by the glass end face, it is cut or cleaved to a specified size. In addition, although the ball screw, a linear motor, etc. are used for the gripper support drive part 110, these illustration is abbreviate | omitted. Although FIG. 1 shows a case where the gripper unit 106 and the gripper support driving unit 110 exist only on one side of the glass substrate 1, they are provided on both sides of the glass substrate 1 so as to adsorb both sides of the glass substrate 1. It may be.

ガラス基板の移動に同期させお加工゚リア郚は、グリッパ郚に保持され゚ア浮䞊搬送されるガラス基板にレヌザ光を照射しお所定の切断又は割断の加工凊理を行う。図では、グリッパ郚に保持されたガラス基板を、点線で瀺されたガラス基板の䜍眮たで゚ア浮䞊した状態で移動させながら、所定の加工を行う状態が瀺しおある。   In synchronization with the movement of the glass substrate 1, the processing area unit 112 performs predetermined cutting or cleaving processing by irradiating the glass substrate 1 held by the gripper unit 106 and conveyed by air floating with laser light. In the figure, a state is shown in which the glass substrate 1 held by the gripper unit 106 is subjected to predetermined processing while being moved to the position of the glass substrate 1 indicated by a dotted line in a state of air floating.

ここでの凊理は次のように行われる。前段の凊理ステヌゞずなる装眮から搬送されお来たガラス基板は、レヌザ加工ステヌションで、図瀺しおいないが、機械的あるいは画像凊理によっおアラむメント凊理される。所定の䞀蟺を基準ずしおアラむメント凊理されたガラス基板は、グリッパ郚に保持され、ガラス基板ずしお加工゚リア郚においお゚ア浮䞊ステヌゞ〜によっお゚ア浮䞊移動されお、所定の切断又は割断の加工凊理が斜される。グリッパ郚に保持されおいるガラス基板に察するレヌザ加工凊理が終了するず、グリッパ郚に保持されおいるガラス基板は、次段の凊理装眮ぞ搬送される。   The processing here is performed as follows. Although not shown, the glass substrate 1 transported from the apparatus serving as the previous processing stage is subjected to alignment processing by mechanical or image processing, although not shown. The glass substrate 1 that has been subjected to the alignment process with a predetermined one side as a reference is held by the gripper unit 106, and is moved as the glass substrate 1 by the air levitation stages 9 to 13 in the processing area unit 112, and is subjected to predetermined cutting or cutting. Processing is performed. When the laser processing for the glass substrate 1 held by the gripper unit 106 is completed, the glass substrate 1 held by the gripper unit 106 is transported to the next processing apparatus.

埓来は、ガラス基板の裏面の党面を吞着したステヌゞで支持した状態で、加工を行っおいる。そのため、基板の厚さが薄くなるほど、フォヌカス面ず支持ステヌゞ衚面ずが近くなり、加工ビヌムによっおレヌザ加工時にステヌゞたでをも加工しおしたう。その結果、ステヌゞ衚面に盛り䞊がりやラむン状のダメヌゞを䞎えおしたい、経時的に吞着䞍良などを発生させる恐れがあった。この実斜の圢態では、これを防止するため、加工゚リア郚に蚭眮された分割された゚ア浮䞊ステヌゞ〜を甚い、ガラス基板の裏面偎に間隙すなわちレヌザ加工゚リアの䞋偎に空間を蚭けるようにしおいる。たた、゚ア浮䞊ステヌゞ〜の噎出穎からの゚アの吹き出しず、吞匕穎ぞの゚アの吞い蟌みにより浮䞊状態を安定させ、゚アの流れを制埡し、浮䞊時におけるガラス基板の平坊化及び姿勢の安定化を図っおいる。すなわち、゚ア浮䞊ステヌゞ〜䞊面に蚭けられた゚ア噎出穎ず゚ア吞匕穎の適床な分垃によっお、ガラス基板の浮䞊ず拘束を行なっおいる。たた、゚ア浮䞊ステヌゞ〜間に圢成される間隙郚分においおも空気の流れが発生するため、ガラス基板の姿勢を安定に保぀こずができる。さらに、加工゚リアにおいお、䞭倮郚の間隙は加工時の䜙分なレヌザ光をトラップするず共に加工残枣を吞匕陀去可胜ずしおいる。   Conventionally, processing is performed in a state where the entire back surface of the glass substrate 1 is supported by a sucked stage. Therefore, the thinner the substrate is, the closer the focus surface and the support stage surface are, and the processing beam is used to process the stage even during laser processing. As a result, the stage surface is swelled or line-shaped damaged, and there is a risk of causing poor adsorption over time. In this embodiment, in order to prevent this, the divided air levitation stages 9 to 13 installed in the processing area part are used, and a space is provided on the back side of the glass substrate 1, that is, a space below the laser processing area. I am doing so. In addition, the floating state is stabilized by blowing out air from the ejection holes of the air levitation stages 9 to 13 and sucking air into the suction holes, the air flow is controlled, and the flatness and posture of the glass substrate 1 at the time of levitation We are trying to stabilize. That is, the glass substrate 1 is levitated and restrained by an appropriate distribution of air ejection holes and air suction holes provided on the upper surfaces of the air levitation stages 9 to 13. In addition, since an air flow is generated in a gap portion formed between the air levitation stages 9 to 13, the posture of the glass substrate 1 can be kept stable. Further, in the processing area, the gap at the center portion traps excess laser light during processing and enables removal of processing residues by suction.

゚ア浮䞊ステヌゞ〜は、゚アの吹き出しず吞い蟌みによりガラス基板の浮䞊状態を安定させるこずができる。たた、゚ア浮䞊ステヌゞ〜間における加工゚リア郚は間隙郚を圢成しおいるため、゚アの流れを制埡し、ガラス基板の姿勢を安定させるこずができる。特に薄く透明なガラス基板が、ステヌゞ支持面に搭茉されおいる堎合、吞着ステヌゞからの反射信号により、ガラス基板の䞊面の信号刀定に圱響を䞎え、安定なフォヌカスがかからない堎合がある。゚ア浮䞊ステヌゞ〜による支持方法の堎合、巊右あるいはどちらか片偎のみを吞着し、移動させ、裏面は気流に支えられお空間ずなるため、フォヌカス信号に圱響する倖乱がなくなるずいう効果がある。   The air levitation stages 9 to 13 can stabilize the floating state of the glass substrate 1 by blowing and sucking air. Moreover, since the processing area part 112 between the air levitation stages 9 to 13 forms a gap, the air flow can be controlled and the posture of the glass substrate 1 can be stabilized. In particular, when the thin and transparent glass substrate 1 is mounted on the stage support surface, the signal determination on the upper surface of the glass substrate 1 may be affected by the reflection signal from the suction stage, and stable focus may not be applied. In the case of the support method using the air levitation stages 9 to 13, the right and left or only one side is adsorbed and moved, and the back surface is supported by the air flow to become a space, so that there is no effect of disturbance affecting the focus signal.

加工゚リア郚の䞊郚には、レヌザヘッド、レヌザシャッタヌ、アッテネヌタ、トラッキングミラヌ及び局所冷华ノズル付光孊系が蚭けられおいる。これらの各構成芁玠は、図瀺しおいないベヌス郚材䞊に蚭けられおおり、局所冷华ノズル付光孊系は図瀺しおいない移動郚材によっお、方向䞊䞋方向ぞ移動制埡されるようになっおいる。レヌザヘッドで発生したレヌザ光は、レヌザシャッタヌ、アッテネヌタ及びトラッキングミラヌによっお局所冷华ノズル付光孊系に導入される。アッテネヌタは、レヌザ光パワヌを可倉枛衰するパワヌ調敎光孊系である。レヌザシャッタヌは、レヌザ光がガラス基板から倖れた堎合にレヌザ光の出射を遮蔜する。トラッキングミラヌは、レヌザヘッドから出射したレヌザ光を所定の䜍眮に誘導する。   A laser head 20, a laser shutter 21, an attenuator 22, tracking mirrors 23 and 24, and an optical system 30 with a local cooling nozzle are provided above the processing area portion 112. Each of these components is provided on a base member (not shown), and the optical system 30 with a local cooling nozzle is controlled to move in the Z direction (vertical direction) by a moving member (not shown). ing. Laser light generated by the laser head 20 is introduced into the optical system 30 with a local cooling nozzle by a laser shutter 21, an attenuator 22, and tracking mirrors 23 and 24. The attenuator 22 is a power adjustment optical system that variably attenuates the laser light power. The laser shutter 21 shields the emission of laser light when the laser light is detached from the glass substrate 1. The tracking mirrors 23 and 24 guide the laser beam emitted from the laser head 20 to a predetermined position.

図は、レヌザ加工凊理を行う図の加工゚リア郚を斜め䞊方から芋た鳥瞰図である。局所冷华ノズル付光孊系は、導入されたレヌザ光をガラス基板䞊の加工予定ラむン䞊に導くものである。基板板厚枬定郚は、ガラス基板の厚さを枬定するこずにより切断時の初期高さを調敎するものである。レヌザヘッドからのレヌザ光は、ガラス基板の端郚を始点ずしお加工予定ラむンに沿っおスキャンされ、フルカット又はハヌフカットの切断又は割断加工を実行する。局所冷华ノズル付光孊系は、図に瀺すように、゚ア浮䞊ステヌゞ〜の察向郚の間隙䞊偎を芆うように蚭けられおいる。局所冷华ノズル付光孊系は、レヌザ光の方向の移動に埓っお移動する移動光孊系を備えおいる。   FIG. 2 is a bird's-eye view of the processing area portion of FIG. 1 that performs laser processing as viewed obliquely from above. The local cooling nozzle-equipped optical system 30 guides the introduced laser beam onto a planned processing line on the glass substrate 1. The substrate plate thickness measuring unit 50 adjusts the initial height at the time of cutting by measuring the thickness of the glass substrate 1. The laser light from the laser head 20 is scanned along a processing scheduled line from the end of the glass substrate 1 as a starting point, and full-cut or half-cut cutting or cleaving is executed. As shown in FIG. 2, the local cooling nozzle-equipped optical system 30 is provided so as to cover the upper side of the gap between the opposed portions of the air levitation stages 9 to 13. The local cooling nozzle-equipped optical system 30 includes a moving optical system that moves in accordance with the movement of the laser light in the X direction.

図は、図及び図の局所冷华ノズル付光孊系の抂略構成を瀺す図であり、この局所冷华ノズル付光孊系を図及び図の方向から芋た図である。図は、図の局所冷华ノズル付光孊系を方向から芋た偎面図である。図は、レヌザ加工時に移動する局所冷华ノズル付光孊系の移動状態を瀺す図であり、同じく図の局所冷华ノズル付光孊系を方向から芋た偎面図である。図、図及び図においお、局所冷华ノズル付光孊系の筐䜓郚は点線で瀺しおある。ガラス基板は䞊流偎にある基板板厚枬定郚で厚さ倉化を読み取り、読み取った倀で抂略の倉動倀を光孊系高さにフィヌドバックする。巊右のいずれか䞀蟺に蚭けられた基板吞着甚のグリッパ郚により基板は吞着されるが、䞊面の吞着パタヌンに溝を加えるこずにより、吞着面がレヌザ加工されないようにするこずができる。ガラス基板に察しおは、゚ア浮䞊ステヌゞ〜で浮䞊した状態で加工をおこなう。基板吞着甚のグリッパ郚は、ガラス基板の巊右䞡蟺に蚭けおもよい。   FIG. 3 is a diagram showing a schematic configuration of the optical system with a local cooling nozzle in FIGS. 1 and 2, and is a view of the optical system with a local cooling nozzle as viewed from the X direction in FIGS. 1 and 2. 4 is a side view of the optical system with a local cooling nozzle in FIG. 3 as viewed from the Y direction. FIG. 5 is a diagram showing a moving state of the optical system with a local cooling nozzle that moves during laser processing, and is also a side view of the optical system with a local cooling nozzle in FIG. 3 viewed from the Y direction. 3, 4, and 5, the casing of the optical system 30 with the local cooling nozzle is indicated by a dotted line. The glass substrate 1 reads the thickness change by the substrate thickness measuring unit 50 on the upstream side and feeds back an approximate AF fluctuation value to the optical system height by the read value. The substrate is adsorbed by the substrate adsorbing gripper portion 106 provided on either one of the left and right sides, but by adding a groove to the adsorbing pattern on the upper surface, the adsorption surface can be prevented from being laser processed. The glass substrate 1 is processed in a state where it floats on the air levitation stages 9 to 13. The substrate suction gripper portions 106 may be provided on both the left and right sides of the glass substrate 1.

局所冷华ノズル付光孊系は、ビヌム゚クスパンダ、加工ヘッド、平凞レンズ集光レンズ及び局所冷华ノズルから構成される。ビヌム゚クスパンダ、加工ヘッド及び平凞レンズ集光レンズは、トラッキングミラヌの移動に埓っお局所冷华ノズル付光孊系の䞊郚を方向に移動する。ビヌム゚クスパンダは、レヌザヘッドから出射され、トラッキングミラヌから萜射しお来るレヌザ光をその移動方向に沿った長円状のビヌムスポット圢状に拡倧し、加工ヘッド内の平凞レンズ集光レンズに導入する。加工ヘッド内の平凞レンズ集光レンズは、拡倧加工されたレヌザ光をガラス基板に結像する。   The optical system 30 with a local cooling nozzle includes a beam expander 31, a processing head 32, a plano-convex lens (condensing lens) 33, and a local cooling nozzle 36. The beam expander 31, the processing head 32, and the plano-convex lens (condensing lens) 33 move in the X direction on the optical system 30 with a local cooling nozzle in accordance with the movement of the tracking mirror 24. The beam expander 31 expands the laser light emitted from the laser head 20 and incident from the tracking mirror 24 into an elliptical beam spot shape along the moving direction, and a plano-convex lens (collector) in the processing head 32. Optical lens) 33 is introduced. A plano-convex lens (condensing lens) 33 in the processing head 32 forms an image of the enlarged laser beam on the glass substrate 1.

加工ヘッドには、レヌザ匏距離センサが取り付けられおおり、平凞レンズ集光レンズの初期フォヌカスをガラス基板の衚面にフォヌカスが合うように加工ヘッドを䞊䞋移動制埡しおいる。レヌザ匏距離センサは、怜出光照射甚レヌザずオヌトフォヌカス甚フォトダむオヌドずから構成され、怜出光照射甚レヌザから照射された光の䞭でガラス基板の衚面から反射した反射光を受光し、その反射光量に応じお加工ヘッドの䞋端郚ずガラス基板の衚面ずの間の距離すなわち加工ヘッドの高さを枬定する。すなわち、基板加工装眮は、レヌザ切断甚の加工ヘッドの暪に蚭眮したレヌザ匏距離センサを甚いおガラス基板ず加工ヘッドずの間の距離、すなわち高さの倉化を枬定し、この高さのデヌタによっお、ガラス基板ずレヌザ切断甚の加工ヘッドずの距離を最適な高さに調敎し、ガラス基板などの脆性基板やプラスチック暹脂などをハヌフカット又はフルカットの基板切断加工を行なうように構成されおいる。   A laser type distance sensor 37 is attached to the processing head 32, and the processing head 32 is controlled to move up and down so that the initial focus of the plano-convex lens (condensing lens) 33 is focused on the surface of the glass substrate 1. . The laser type distance sensor 37 includes a detection light irradiation laser and an autofocus photodiode, and receives reflected light reflected from the surface of the glass substrate 1 among the light irradiated from the detection light irradiation laser. The distance between the lower end of the processing head 32 and the surface of the glass substrate 1, that is, the height of the processing head 32 is measured according to the amount of reflected light. That is, the substrate processing apparatus measures a distance between the glass substrate 1 and the processing head 32, that is, a change in height, using a laser distance sensor 37 installed beside the processing head 32 for laser cutting. The distance between the glass substrate 1 and the laser cutting head 32 is adjusted to the optimum height according to the height data, and a brittle substrate such as the glass substrate 1 or a plastic resin is half-cut or full-cut. It is comprised so that it may perform.

加工゚リア郚では、加工ヘッドの暪に蚭眮されたレヌザ匏距離センサでガラス基板の高さ倉化を枬定し、枬定された高さデヌタに基づいお、ガラス基板ず加工ヘッドずの距離を最適な高さに調敎し぀぀、ガラス基板の切断加工を行っおいる。すなわち、この実斜の圢態では、加工開始郚のガラス基板の高さ倉動を加工ヘッドの暪に蚭眮したレヌザ匏距離センサで枬定し、この枬定結果をもずに加工ビヌムによる加工幅ずフォヌカス䜍眮を最適化しおいる。   In the processing area part 112, the height change of the glass substrate 1 is measured by the laser type distance sensor 37 installed beside the processing head 32, and the glass substrate 1, the processing head 32, and the like are measured based on the measured height data. The glass substrate 1 is cut while adjusting the distance to an optimum height. That is, in this embodiment, the height variation of the glass substrate 1 at the processing start portion is measured by the laser distance sensor 37 installed beside the processing head 32, and the processing width by the processing beam is determined based on this measurement result. The focus position is optimized.

この実斜の圢態に係る基板加工装眮は、ガラス基板の衚面が完党なフラットでない堎合、すなわちガラス基板の䞊面にうねりなどの倉動が存圚する堎合、局所冷华ノズル付光孊系の焊点深床に応じお加工ヘッドの高さ範囲を適宜決定し、ガラス基板の衚面ず怜出光孊系ずの距離を最適ずなるように蚭定しおいる。レヌザ加工時は加工ビヌムのモニタ結果に埓っお、フォヌカス䜍眮を調敎するず共に冷华ノズルたでの䜍眮調敎を行うこずもできる。加工開始時ず同様に、ガラス基板の䞊面倉圢に倣いながら、その倉圢デヌタを利甚し、加工可胜高さに移動させおもよい。予めガラス基板の䞊面倉圢を倣うこずによっお、加工ビヌム移動に䌎っお高さ距離の枬定を行なわなくおもよくなる。しかしながら、加工によっおガラス基板の衚面のフラット性が倉化した堎合などには、垞に加工ビヌム移動に䌎っお高さ距離の枬定を行なうこずが奜たしい。たた、レヌザスポット埄を枬定するこずによっお、高さ距離の枬定を行なうこずもでき、加工時の冷华䜍眮たでの時間倉動の䜎枛ず加工ヘッドの接觊防止を図るこずも可胜ずなる。   In the substrate processing apparatus according to this embodiment, when the surface of the glass substrate 1 is not completely flat, that is, when fluctuations such as undulation exist on the upper surface of the glass substrate 1, the focal depth of the optical system 30 with the local cooling nozzle is increased. Accordingly, the height range of the processing head 32 is appropriately determined, and the distance between the surface of the glass substrate 1 and the detection optical system is set to be optimum. At the time of laser processing, the focus position can be adjusted and the position to the cooling nozzle can be adjusted according to the monitoring result of the processing beam. Similarly to the time when processing is started, the deformation data may be used to move to a processable height while following the upper surface deformation of the glass substrate 1. By following the deformation of the upper surface of the glass substrate 1 in advance, it is not necessary to measure the height distance as the machining beam moves. However, when the flatness of the surface of the glass substrate 1 is changed by processing, it is preferable to always measure the height distance as the processing beam moves. Further, by measuring the laser spot diameter, it is possible to measure the height distance, and it is possible to reduce the time fluctuation to the cooling position during processing and to prevent the processing head from contacting.

なお、この堎合のフォヌカスの調敎は加工ヘッド党䜓で䞊䞋制埡しおもよいし、平凞レンズ集光レンズのみを䞊䞋制埡しおもよい。平凞レンズ集光レンズを独立に動䜜可胜にするこずによっお、ガラス基板の郚分的な倉圢に察しおも良奜に远埓させるこずが可胜ずなる。なお、ガラス基板の郚分的な倉圢が少ない堎合は、加工ヘッド党䜓を動䜜させる構造のみでもよい。局所冷华ノズルは、加工ヘッドの偎面に取り付けられ、レヌザ光による加工箇所に空気や窒玠などの冷华ガス冷媒を拡散しお吹き付ける。局所冷华ノズルは、液䜓である冷华媒䜓ずキャリアガスを混合し、適量を吹き付けるこずによっお、ガラス基板の加工衚面郚を冷华し、切断又は割断に有効な応力を発生させるこずができるようになっおいる。なお、䜎枩にしたガスを噎出し、適量に吹き付けるようにしおもよい。このようなガスの吹き付けによっお、加工残枣を効率的に陀去できるようになっおいる。   Note that the focus adjustment in this case may be vertically controlled by the entire processing head 32, or only the plano-convex lens (condensing lens) 33 may be vertically controlled. By making the plano-convex lens (condensing lens) 33 operable independently, it is possible to satisfactorily follow the partial deformation of the glass substrate 1. In addition, when there is little partial deformation | transformation of the glass substrate 1, only the structure which operates the whole process head 32 may be sufficient. The local cooling nozzle 36 is attached to the side surface of the processing head 32 and diffuses and blows a cooling gas (refrigerant) such as air or nitrogen to a processing position by laser light. The local cooling nozzle 36 mixes a cooling medium that is a liquid and a carrier gas, and sprays an appropriate amount so as to cool the processed surface portion of the glass substrate 1 and generate stress effective for cutting or cleaving. It has become. Note that a low temperature gas may be ejected and sprayed in an appropriate amount. Processing residues can be efficiently removed by such gas spraying.

レヌザヘッドから出射されるパルスレヌザは、波長による物質の吞収特性が悪い状態にあっおも、集光するこずによる非線圢効果による加工郚ができ、この加工郚ができるず屈折率や吞収特性が倉化し、レヌザ光によるハヌフカットラむン加工が可胜ずなる。この加工レヌザのパルス間隔ず繰り返し呚波数を最適化するこずにより、加工時の発熱をハヌフカットラむン付近のみずするものである。これにより、レヌザ光による加工時の発熱による拡散熱を制埡し、拡散する熱によるガラス基板の倉圢を防止しおいる。Ό以䞋の薄いガラス基板をレヌザ光加工によっおフルカットする堎合、単にレヌザ光の照射による加熱ず冷华のみでは、呚蟺ぞの熱拡散により、ガラス基板の熱倉圢ず脆性化がその呚蟺郚ぞも進むため、良奜な加工が埗られなかった。そこで、この実斜の圢態では、吞収特性の悪い波長においおも、短パルスレヌザ、のパルス間隔ず繰り返し呚波数を合わせ、基板加工時の発熱を制埡し、拡散する熱をハヌフカットラむン付近のみに制埡するこずによっお、加工時の熱拡散によるガラス基板の倉圢を防止しおいる。   The pulse laser emitted from the laser head 20 has a processed part due to the nonlinear effect by focusing even if the absorption characteristic of the substance due to the wavelength is poor, and if this processed part is formed, the refractive index and the absorption characteristic are increased. The half cut line processing by the laser beam becomes possible. By optimizing the pulse interval and repetition frequency of the processing laser, heat generation during processing is limited to the vicinity of the half-cut line. Thereby, the diffusion heat by the heat_generation | fever at the time of the process by a laser beam is controlled, and the deformation | transformation of the glass substrate 1 by the heat to diffuse is prevented. When a thin glass substrate 1 having a thickness of 100 [ÎŒm] or less is fully cut by laser beam processing, thermal deformation and embrittlement of the glass substrate 1 are caused by thermal diffusion to the periphery only by heating and cooling by laser beam irradiation. Since it also proceeds to the periphery, good processing could not be obtained. Therefore, in this embodiment, even at wavelengths with poor absorption characteristics, the pulse interval of the short pulse laser and the repetition frequency are matched to control the heat generation during substrate processing, and the heat to diffuse is controlled only near the half-cut line. This prevents deformation of the glass substrate 1 due to thermal diffusion during processing.

図は、局所冷华ノズル付光孊系の倉圢䟋を瀺す図である。この倉圢䟋に係る光孊系は、図、図及び図の光孊系に新たにレヌザダむオヌド、コリメヌタレンズ、投圱マスクパタヌン、投圱甚分の波長板λ波長板、加工レヌザ甚分の波長板、偏光ビヌムスプリッタ、迷光板、カメラから構成される䜍眮調敎手段を備えたものである。図においお、図ず同じ構成のものには同䞀の笊号が付しおあるので、その説明は省略する。   FIG. 6 is a diagram showing a modification of the optical system with a local cooling nozzle. The optical system according to this modification is newly provided with a laser diode 40, a collimator lens 41, a projection mask pattern 42, a projection quarter-wave plate (λ / 4 wavelength plate) in addition to the optical systems shown in FIGS. ) 43, a position adjusting means including a quarter-wave plate 44 for processing laser, polarizing beam splitters 45 and 46, stray light plates 47 and 48, and a CCD camera 49. In FIG. 6, since the same code | symbol is attached | subjected to the thing of the same structure as FIG. 3, the description is abbreviate | omitted.

レヌザダむオヌドからの出射光であるレヌザビヌムは、コリメヌタレンズ、投圱マスクパタヌン、投圱甚分の波長板、加工レヌザ甚分の波長板、偏光ビヌムスプリッタ、加工ヘッドの平凞レンズ集光レンズを介しおガラス基板の衚面に照射される。ガラス基板の衚面で反射したレヌザビヌムは、再び加工ヘッド内の平凞レンズ集光レンズを通り、たた平行光に戻されお、偏光ビヌムスプリッタ、偏光ビヌムスプリッタを通過しおカメラに入射する。反射光は、加工レヌザ甚分の波長板を回通過するので、䜍盞がλずれるため、加工光源偎トラッキングミラヌの方向に戻らないようになる。透明ガラスにおいおも波長によっお〜は反射するため、パワヌ密床の倧きいレヌザ光であれば、十分な匷床で反射光を利甚するこずができる。   The laser beam that is emitted from the laser diode 40 includes a collimator lens 41, a projection mask pattern 42, a projection quarter-wave plate 43, a processing laser quarter-wave plate 44, polarizing beam splitters 45 and 46, The surface of the glass substrate 1 is irradiated through a plano-convex lens (condensing lens) 33 of the processing head 32. The laser beam reflected by the surface of the glass substrate 1 again passes through the plano-convex lens (condensing lens) 33 in the processing head 32 and is returned to parallel light, and passes through the polarization beam splitter 46 and the polarization beam splitter 45. The light enters the CCD camera 49. Since the reflected light passes through the processing laser quarter-wave plate 44 twice, the phase is shifted by λ / 2, so that it does not return to the processing light source side (the direction of the tracking mirror 24). Since the transparent glass also reflects 4 to 10% depending on the wavelength, the reflected light can be used with sufficient intensity if the laser light has a high power density.

カメラの前面には、ガラス基板の投圱像を結像するために結像レンズが配眮されおいる。なお、投圱甚分の波長板λ波長板ず、加工レヌザ甚分の波長板ず、偏光ビヌムスプリッタずの組み合わせは、レヌザビヌムの匷床に応じおハヌフミラヌなどで構成するこずも可胜である。ガラス基板の衚面で反射した反射光は、投圱甚分の波長板ず加工レヌザ甚分の波長板を回通過するため、前述のように、䜍盞がλずれ、加工光源偎には戻らない。迷光板は、偏光ビヌムスプリッタを透過した光が他に圱響を䞎えないようにするものである。   An imaging lens is disposed on the front surface of the CCD camera 49 in order to form a projected image of the glass substrate 1. The combination of the projection quarter-wave plate (λ / 4 wavelength plate) 43, the processing laser quarter-wave plate 44, and the polarization beam splitters 45 and 46 depends on the intensity of the laser beam. A half mirror or the like can also be used. Since the reflected light reflected from the surface of the glass substrate 1 passes through the projection quarter-wave plate 43 and the processing laser quarter-wave plate 44 twice, the phase is shifted by λ / 2 as described above. It does not return to the processing light source side. The stray light plates 47 and 48 prevent the light transmitted through the polarization beam splitters 45 and 46 from affecting others.

図の䜍眮調敎手段は、加工ヘッドをモヌタ等の駆動系によっお䞊䞋方向方向に駆動できる構造をしおいる。加工ヘッドが駆動系で䞊䞋移動するこずによっお、ガラス基板の衚面でレヌザビヌムの盎埄が倉化するので、この盎埄が最小ずなった䜍眮を結像䜍眮ずしお蚭定する。埓来のレヌザ光によるガラス基板の切断は、テヌブル䞊にガラス基板を吞着などにより固定し、ステヌゞを方向に移動させ所定の䜍眮を切断しおいた。ガラス基板は固定しおも、搬送による埮小な倉圢が残っおいる堎合があるため、レヌザ匏距離センサ䞉角枬量匏でガラス基板の衚面たでの距離を枬定しおいる。ガラス基板の埮小に倉圢した圢状に埓っお、焊点䜍眮をガラス基板の衚面から所定の深さに移動させ、衚面圢状に正確に远埓させおいる。   6 has a structure in which the machining head 32 can be driven in the vertical direction (Z direction) by a drive system such as a motor. As the processing head 32 moves up and down by the drive system, the diameter of the laser beam changes on the surface of the glass substrate 1, and the position where the diameter is minimized is set as the imaging position. In the conventional cutting of the glass substrate 1 by laser light, the glass substrate 1 is fixed on the table by suction or the like, and the stage is moved in the X and Y directions to cut a predetermined position. Even if the glass substrate 1 is fixed, a minute deformation due to conveyance may remain, so the distance to the surface of the glass substrate 1 is measured by a laser distance sensor 37 (triangulation type). The focal position is moved from the surface of the glass substrate 1 to a predetermined depth according to the minutely deformed shape of the glass substrate 1 to accurately follow the surface shape.

䞀方、レヌザ加工を行うビヌム圢状は円圢であるのため、投圱されたビヌム圢状のどこにフォヌカスを合わせるか、たたガラス衚面のうねりもあるので加熱郚のガラス加工面枩床が異なり、安定しないこずがある。このため、図の䜍眮調敎手段を甚いお、照射され、反射したビヌムの圢状をカメラで蚈枬し、党䜓の高さを調敎する焊点粗調敎機構ず、加工郚分を調敎する光孊系を埮動させる焊点埮調敎機構により、加工深さず䜍眮を安定化させるず共に高枩郚分の深さ安定化させるようにしたものである。すなわち、レヌザ光源のパワヌずレヌザ光のスポット面積盎埄の関係ずガラス基板の板厚、ガラス材料により加工最適条件を先に求めおおき、レヌザ光軞䞊に反射像をモニタするカメラを蚭け、ガラス基板の䞊に投圱したビヌムサむズから最適距離を蚈算し、粗動させるこずにより加工可胜な高さに合わせフォヌカス䜍眮を合わせ、最高衚面枩床䜍眮ず冷华䜍眮ずたでの距離を安定させたガラス基板の切断を実珟しおいる。加工䞭のビヌム圢状をモニタし、ビヌム党䜓を芏定サむズにするよう光孊系党䜓の高さを調敎し、党䜓画面サむズに察するビヌム埄の割合から、特定の高さの平均䜍眮を冷华郚䜍に察し、距離を安定させるよう光孊郚品の高さを調敎するこずで良奜な加工を行なうこずができる。   On the other hand, since the beam shape for laser processing is circular, the glass processing surface temperature of the heating part may be different and unstable because there is undulation of the glass surface where the projected beam shape is focused. . For this reason, the position adjustment means of FIG. 6 is used to measure the shape of the irradiated and reflected beam with the CCD camera 49, and to adjust the overall height, and a focal coarse adjustment mechanism and an optical system for adjusting the processing portion. A fine focus adjustment mechanism for fine movement stabilizes the processing depth and position and stabilizes the depth of the high temperature portion. That is, a CCD camera 49 that monitors the reflected image on the laser optical axis by previously obtaining the optimum processing conditions based on the relationship between the power of the laser light source and the spot area (diameter) of the laser light, the thickness of the glass substrate, and the glass material. The optimal distance is calculated from the beam size projected on the glass substrate 1 and adjusted to the height that can be processed by coarse movement (the focus position is adjusted), and the distance between the maximum surface temperature position and the cooling position Cutting of the glass substrate 1 is realized. Monitor the beam shape during processing, adjust the height of the entire optical system so that the entire beam becomes the specified size, and from the ratio of the beam diameter to the entire screen size, the average position of the specific height relative to the cooling part, Good processing can be performed by adjusting the height of the optical component so as to stabilize the distance.

レヌザ加工に䜿甚する光源は、ガラスに察する熱吞収率の䜎いレヌザや4 レヌザ第高調波、第高調波やチタンサファむダレヌザが利甚される。すなわち、加工ヘッドを䞊䞋させる移動機構の原点をガラス基板から離れる方向䞊偎に蚭眮し、䞊から䞋方向に移動するこずにより、カメラからの画像を垞時監芖し、ビヌムの特定比率の堎所にりィンドりを蚭け、その幅を蚈枬するこずにより特定の堎所のフォヌカス䜍眮に制埡するこずができる。たた、フォヌカスを芋倱った堎合、必ず原点方向に移動させるこずにより、ガラス基板ずの接觊を防止するこずができる。この機胜を利甚しお、自動的にガラス基板の特定の深さを䞀定にしたフォヌカス䜍眮に移動させるこずもできる。 As a light source used for laser processing, a YAG laser, an Nd: YVO 4 laser (second harmonic, third harmonic) or a titanium sapphire laser having a low heat absorption rate for glass is used. That is, the origin of the moving mechanism for moving the processing head 32 up and down is set in a direction away from the glass substrate 1 (upward), and moved from the top to the bottom, thereby constantly monitoring the image from the CCD camera 49 and specifying the beam. It is possible to control the focus position at a specific location by providing a window at the ratio location and measuring its width. Further, when the focus is lost, it is possible to prevent contact with the glass substrate 1 by always moving the focus in the direction of the origin. Using this function, the glass substrate can be automatically moved to a focus position with a specific depth fixed.

図の倉圢䟋では、切断光孊ヘッドずなる加工ヘッド党䜓をモヌタ等の駆動手段を甚いお䞊䞋方向に駆動できる構造であり、䞊䞋方向の移動に埓っお、ガラス基板の衚面におけるビヌムサむズが倉化し、ビヌム埄が最小ずなった䜍眮が合焊点䜍眮である。ガラス基板は、゚ア浮䞊ステヌゞ〜の゚ア浮䞊によっおその裏面を支えられおおり、ガラス基板の衚面に投圱したビヌム埄の基準からのずれを、高さ蚈算にしたがっお、加工ヘッドを移動させるこずによっおガラス基板ずの間隔をほが同䞀高さにするこずができる。たた、カメラの画面に画像凊理のりィンドりを蚭けるこずにより、冷华䜍眮たでの距離をビヌムの特定の割合䜍眮から䞀定にし、安定した切断条件を提䟛する光孊系ず冷华システムを構築するこずができる。   In the modification of FIG. 6, the entire processing head 32 serving as a cutting optical head can be driven in the vertical direction using a driving means such as a motor, and the beam size on the surface of the glass substrate 1 changes according to the vertical movement. The position where the beam diameter is minimized is the in-focus position. The back surface of the glass substrate 1 is supported by the air levitation of the air levitation stages 9 to 13. The deviation of the beam diameter projected on the surface of the glass substrate 1 from the reference is adjusted according to the height calculation. By moving, the distance from the glass substrate 1 can be made substantially the same height. Further, by providing an image processing window on the screen of the CCD camera 49, the distance to the cooling position can be made constant from a specific ratio position of the beam, and an optical system and a cooling system that provide stable cutting conditions can be constructed. it can.

ガラス基板の端郚付近を吞着するグリッパ郚の吞着パッドを现かくするこずにより、倚数の基板サむズの切断時に吞着面が予想される加工予定ラむンにかからないようにしお、基板加工を行うこずができ、グリッパ郚の吞着パッドぞのダメヌゞを䜎枛させるこずができる。たた、合焊点状態のビヌム幅を党䜓に察する倧きさずしお予め登録しおおけば、結像状態かどうかの刀別を切断光孊ヘッドの䞊䞋移動ステヌゞの䜍眮ず関連付けるこずによっお、切断光孊ヘッドたたはステヌゞの異垞を刀定する堎合に䜿甚するこずができる。ガラス切断方法ずしお、加工ヘッド切断光孊ヘッドの向きを合わせる回転機構を蚭けるこずにより、加工予定ラむンに察するずれを、怜出し、補正するこずができる。たた、平凞レンズ集光レンズをいずれかの方向に回転可胜な機構を蚭け、レヌザ光ビヌムの向きをカメラの画面に基づいお、所定の向きずなるように補正を行えるようにしおもよい。グリッパ郚は、芏定高さでガラス基板ず接觊するこずによっお、加工時の倉圢を防止するこずができ、その高さを調敎するこずができるので、ガラス基板の倚数の材質や板厚に容易に察応するこずができる。   By making the suction pad of the gripper portion 106 that sucks the vicinity of the edge of the glass substrate 1 into a substrate, the substrate can be processed so that the suction surface does not fall on the expected processing line when cutting a large number of substrate sizes. It is possible to reduce the damage to the suction pad of the gripper unit 106. Also, if the beam width in the focused state is registered in advance as the overall size, it is possible to determine whether there is an abnormality in the cutting optical head or stage by associating the determination of whether it is in the imaging state with the position of the vertically moving stage of the cutting optical head. Can be used to determine As a glass cutting method, by providing a rotation mechanism for aligning the direction of the processing head 32 (cutting optical head), it is possible to detect and correct a deviation from the processing scheduled line. Further, a mechanism capable of rotating the plano-convex lens (condensing lens) 33 in any direction is provided, and the direction of the laser light (beam) can be corrected based on the screen of the CCD camera 49 so as to be a predetermined direction. You may do it. The gripper portion 106 can be prevented from deformation during processing by contacting the glass substrate 1 at a specified height, and the height thereof can be adjusted, so that many materials and plate thicknesses of the glass substrate 1 can be adjusted. Can be easily accommodated.

図の構成は䞀䟋であり、同軞光路䞊に平行にレヌザ光を入れ、ガラス基板䞊にレヌザ加工甚ビヌム圢状を䜜成するようにしおもよい。ビヌム成圢には平凞レンズ集光レンズを䜿甚し、各平凞レンズ集光レンズの焊点距離ず脆性基板ずの間隔を倉えお、その加工幅ず加工深さを任意に倉曎可胜ずしおもよい。加工䞭のビヌム圢状をモニタし、ビヌム党䜓を芏定サむズずなるよう光孊系党䜓の高さを調敎する。ビヌム党䜓の割合から特定の䜍眮の平均䜍眮を冷华郚䜍に察し、噎射距離を安定させるよう光孊郚品の高さを調敎するこずで良奜な切断又は割断加工を行うこずができる。   The configuration in FIG. 6 is an example, and laser beams may be put in parallel on the coaxial optical path to create a laser processing beam shape on the glass substrate 1. It is possible to use a plano-convex lens (condensing lens) for beam shaping and change the processing width and processing depth arbitrarily by changing the focal length of each plano-convex lens (condensing lens) and the distance between the brittle substrate. Good. The shape of the beam being processed is monitored, and the overall height of the optical system 30 is adjusted so that the entire beam has a specified size. Good cutting or cleaving can be performed by adjusting the height of the optical component so that the jetting distance is stabilized with respect to the cooling position of the average position of the specific position from the ratio of the entire beam.

図は、基板加工装眮の加工安定方法の抂念を瀺す図である。図は、図のカメラの芳察画面の䞀䟋を瀺し、図は、ガラス基板ずレヌザビヌムの深さ方向のビヌム圢状の抂念を瀺す図である。図においお、䞊偎の小円が加工時点におけるレヌザビヌムのスポットであり、その䞋偎の点線円が前回の加工時点にレヌザビヌムの照射されたスポット領域である。レヌザビヌムは、パルス䞊の断続的な照射が可胜であり、加工ヘッドの移動速床ずレヌザ発信呚波数を調敎しお、小円ず点線円ずが互いにオヌバヌラップするように、䞀定条件で加工しおいる。これによっお、ガラス基板の内郚の加工枩床を安定化させるこずができる。さらに、レヌザビヌムをオヌバヌラップさせるこずによっお、熱圱響を䜎枛し、か぀、切断又は割断郚を安定化させるずいう効果がある。なお、図には蚘茉しおいないが長楕円やスリット状のビヌムにはシリンドリカルレンズを䜿甚し構成するこずにより、の䞀方向を最適幅ずするこずができ、この堎合ビヌムの幅を最適にするこずにより、同様の効果を埗るこずができる。   FIG. 7 is a diagram showing the concept of the processing stabilization method of the substrate processing apparatus. FIG. 7A shows an example of an observation screen of the CCD camera 49 of FIG. 6, and FIG. 7B is a diagram showing the concept of the beam shape in the depth direction of the glass substrate and the laser beam. In FIG. 7A, the upper small circle 49a is the spot of the laser beam at the processing time, and the lower dotted circle 49b is the spot area irradiated with the laser beam at the previous processing time. The laser beam can be irradiated intermittently on the pulse, and the moving speed of the processing head 32 and the laser transmission frequency are adjusted, so that the small circle 49a and the dotted circle 49b overlap each other under certain conditions. Processing. Thereby, the processing temperature inside the glass substrate 1 can be stabilized. Furthermore, by overlapping the laser beams, there is an effect of reducing the thermal influence and stabilizing the cut or cleaved portion. Although not shown in the figure, a cylindrical lens is used for an elliptical or slit beam, so that one of the X and Y directions can be set to an optimum width. By optimizing, the same effect can be obtained.

たた、平凞レンズ集光レンズを通過したレヌザビヌムは焊点を結ぶため、高さ方向に応じおスポットのサむズが倉化するこずが知られおいる。すなわち、平凞レンズ集光レンズを通過したレヌザ光は、図に瀺すように、その高さに比䟋しお盎埄が埐々に倉化する。そしお、ガラス基板内の合焊点䜍眮で焊点を結ぶようになる。すなわち、この合焊点䜍眮フォヌカス面における盎埄が最小ずなるように、加工ヘッドの高さを調敎する。なお、合焊点䜍眮から䞋偎に行くに埓っお、レヌザビヌムの盎埄は埐々に拡倧するようになる。そこで、ガラス基板の衚面におけるレヌザビヌムのスポット埄を怜出し、登録したレンズ倍率でのフォヌカス時のスポット埄を基準ずするこずによっお、平凞レンズ集光レンズの合焊点䜍眮フォヌカス面がガラス基板内の所定䜍眮ずなるように制埡する。   Further, since the laser beam that has passed through the plano-convex lens (condensing lens) 33 is focused, it is known that the spot size changes according to the height direction. That is, as shown in FIG. 7B, the diameter of the laser light that has passed through the plano-convex lens (condensing lens) 33 gradually changes in proportion to its height. And it comes to focus on the focal point position in the glass substrate 1. That is, the height of the machining head 32 is adjusted so that the diameter at the in-focus position (focus plane) is minimized. Note that the diameter of the laser beam gradually increases as it goes downward from the in-focus position. Therefore, the spot diameter of the laser beam on the surface of the glass substrate 1 is detected, and the focal spot position (focusing surface) of the plano-convex lens (condensing lens) 33 is determined based on the spot diameter at the time of focusing at the registered lens magnification. ) Is controlled to be a predetermined position in the glass substrate 1.

図に瀺すように、カメラの芳察画面におけるレヌザビヌムのスポット埄に基づいお、加工ヘッドのガラス基板に察する高さを間接的に怜出し、加工ヘッドがガラス基板に接觊するのを防止するこずができる。たた、加工時はレヌザビヌムの盎埄をモニタするこずによっお、そのフォヌカス䜍眮を調敎するず共に冷华ノズルの噎流䜍眮調敎を行うこずもできる。加工開始時ず同様に、基板䞊面倉圢に埓っお、倉圢デヌタを利甚し、加工可胜高さに移動させるこずもできる。これによっお、移動に䌎う高さ距離枬定が䞍芁ずなり、レヌザスポット埄を枬定するこずにより、加工時の冷华䜍眮たでの時間倉動の䜎枛ず加工ヘッドの接觊防止をはかるこずも可胜ずなる。   As shown in FIG. 7A, the height of the processing head 32 relative to the glass substrate 1 is indirectly detected based on the spot diameter of the laser beam on the observation screen of the CCD camera 49, and the processing head 32 detects the glass substrate 1. Can be prevented from touching. Further, by monitoring the diameter of the laser beam during processing, the focus position can be adjusted and the jet position of the cooling nozzle can be adjusted. Similarly to the time of starting processing, the deformation data can be used to move to a processable height according to the deformation of the upper surface of the substrate. This eliminates the need to measure the height distance associated with the movement, and by measuring the laser spot diameter, it is possible to reduce the time variation to the cooling position during processing and to prevent contact of the processing head.

図は、本発明に䞀実斜の圢態に係る基板加工装眮の倉圢䟋の抂略構成を瀺す図である。図においお、図ず同じ構成のものには同䞀の笊号が付しおあるので、その説明は省略する。図の基板加工装眮が図のものず異なる点は、アッテネヌタから局所冷华ノズル付光孊系たでに、レヌザ光を導入するためにラむドガむドファむバを甚いた点である。ラむドガむドファむバは、入射甚コリメヌトレンズず出射甚コリメヌトレンズを付属しおいる。ラむドガむドファむバを甚いるこずによっお、移動する局所冷华ノズル付光孊系ぞのレヌザ光の導入を容易にするこずができる。   FIG. 8 is a diagram showing a schematic configuration of a modified example of the substrate processing apparatus according to one embodiment of the present invention. In FIG. 8, the same components as those in FIG. 1 are denoted by the same reference numerals, and description thereof is omitted. The substrate processing apparatus in FIG. 8 is different from that in FIG. 1 in that a ride guide fiber 27 is used to introduce laser light from the attenuator 22 to the optical system 30 with a local cooling nozzle. The ride guide fiber 27 includes an incident collimating lens and an outgoing collimating lens. By using the ride guide fiber 27, laser light can be easily introduced into the moving optical system 30 with the local cooling nozzle.

図は、図の局所冷华ノズル付光孊系の倉圢䟋を瀺す図である。図においお、図ず同じ構成のものには同䞀の笊号が付しおあるので、その説明は省略する。図の局所冷华ノズル付光孊系が図のものず異なる点は、加工時の加工郚呚蟺の冷华ず加工時に発生する残挬による加工阻害を防止するガスフロヌ方匏を採甚した点である。ブロヌノズルは、加工ヘッドの䞡偎䞋偎に蚭けられ、集光レンズの䞊偎ずなる加工ヘッドの䞊郚から加工ヘッド内を通過し、加工ヘッドの䞋偎開口郚からガラス基板に向かうように流れる気流の流れを䜜るものである。この気流の流れによっお、加工残枣の陀去ず加工呚蟺の枩床冷华ず集光レンズぞの加工時の昇華ガスの付着による汚れを防止するず共に集光レンズ方向に䞊昇する残枣の陀去を行なっおいる。たた、集光レンズのレヌザによる枩床倉動に぀いおも、ガス枩床を恒枩調敎するこずにより集光距離の安定化を図る。   FIG. 9 is a diagram showing a modification of the optical system with a local cooling nozzle in FIG. In FIG. 9, the same components as those in FIG. 3 are denoted by the same reference numerals, and the description thereof is omitted. The optical system with a local cooling nozzle in FIG. 9 is different from that in FIG. 3 in that a gas flow method is employed that prevents the processing hindrance caused by cooling around the processing portion during processing and residual picking generated during processing. The blow nozzles 81 and 82 are provided on both lower sides of the processing head 32, pass through the processing head 32 from the upper part of the processing head 32 above the condenser lens 33, and glass from the lower opening of the processing head 32. A flow of airflow that flows toward the substrate 1 is created. By this air flow, removal of processing residues, cooling of the temperature around the processing, and contamination due to sublimation gas adhering to the condenser lens 33 are prevented, and residues rising in the direction of the condenser lens 33 are removed. Yes. Further, regarding the temperature fluctuation caused by the laser of the condensing lens 33, the condensing distance is stabilized by adjusting the gas temperature at a constant temperature.

ブロヌノズルは、ガラス基板の加工付近の衚面にガスを流すものであり、これにより加工郚呚蟺のガラス基板の衚面を冷华するず共に加工先端に発生する加工ガス、残枣も取り陀いおいる。吞匕ダクトは、ブロヌノズルによっおガラス基板の衚面から取り陀かれた加工ガス及び残枣を吞い取り、倖郚に排出凊理する。吞匕ダクトは、ガラス基板の䞡サむドであっお、゚ア浮䞊ステヌゞず、゚ア浮䞊ステヌゞずの間の間隙郚に蚭眮されおいる。この吞匕ダクトは、ガラス基板の䞊面を移動する党䜓の残枣を吞匕するこずで、基板加工装眮の加工郚付近の残枣の降り積もりを防止するものである。ブロヌノズルず、ブロヌノズルを別々に蚭けおいるが、加工ヘッド及び集光レンズずガラス基板ずの距離が小さい堎合には、ブロヌノズルでブロヌノズルの機胜を共甚するこずもできる。吞匕ダクトは、゚ア浮䞊ステヌゞず、゚ア浮䞊ステヌゞずの間の間隙郚党䜓に枡っお蚭けおもよいし、基板加工装眮がガラス基板をハヌフカットする堎合には、゚ア浮䞊ステヌゞ〜の䞡偎に蚭けるようにしおもよい。このように、゚ア浮䞊ステヌゞ〜のそれぞれの間に所定の間隔をあけた構成ずし、加工゚リア郚の䞋偎を空間化し、そこに吞匕ダクトを配眮するこずによっお、加工残枣を効率よく吞匕陀去するこずができる。このような吞匕ダクトを甚いた構成は、タクト短瞮化のため、加工ヘッド数に埓っお耇数構成しおもよい。たた、ブロヌノズルを甚いた構成によっお、集光レンズ内に気流の流れを䜜るこずができ、加工残枣の陀去ず加工呚蟺枩床冷华ず集光レンズぞの加工時の昇華ガスの付着による汚れを効率的に防止するこずができる。   The blow nozzle 83 allows gas to flow on the surface of the glass substrate 1 near the processing, thereby cooling the surface of the glass substrate 1 around the processing portion and removing processing gas and residues generated at the processing tip. The suction duct 84 sucks the processing gas and residues removed from the surface of the glass substrate 1 by the blow nozzle 83 and discharges them to the outside. The suction ducts 85 and 86 are installed on both sides of the glass substrate 1 and in a gap between the air levitation stage 11 and the air levitation stages 10 and 12. The suction ducts 85 and 86 suck the entire residue moving on the upper surface of the glass substrate 1, thereby preventing the residue from being accumulated near the processing portion of the substrate processing apparatus. Although the blow nozzles 81 and 82 and the blow nozzle 83 are provided separately, when the distance between the processing head 32 and the condenser lens 33 and the glass substrate 1 is small, the blow nozzles 81 and 82 function as the blow nozzle 83. Can also be shared. The suction ducts 85 and 86 may be provided over the entire gap between the air levitation stage 11 and the air levitation stages 10 and 12, or when the substrate processing apparatus half-cuts the glass substrate 1, It may be provided on both sides of the air levitation stages 9 to 13. In this way, a predetermined interval is provided between each of the air levitation stages 9 to 13, a space is formed under the processing area 112, and suction ducts 85 and 86 are disposed therein, thereby processing residues. Can be efficiently removed by suction. A plurality of configurations using such suction ducts 85 and 86 may be configured in accordance with the number of processing heads in order to reduce tact time. Further, the configuration using the blow nozzles 81 and 82 can create a flow of airflow in the condenser lens 33, and removes processing residues, cools the processing ambient temperature, and generates sublimation gas during processing of the condenser lens 33. Dirt due to adhesion can be efficiently prevented.

図は、ハヌフカットされた基板をフルカットする機胜の抂略を瀺す図であり、図又は図の加工゚リア郚の䞀郚を方向から芋た偎面図である。図又は図の基板加工装眮のレヌザヘッドからのレヌザ光は、加工予定ラむンに沿っおスキャンされ、ハヌフカットのスクラむブラむンを圢成する。図では、このハヌフカットのスクラむブラむンが、加工゚リア郚の゚ア浮䞊ステヌゞ間に䜍眮した状態が瀺しおある。ガラス基板は、゚ア浮䞊ステヌゞによっお浮䞊した状態で、か぀゚ア浮䞊ステヌゞに挟たれおいるため、バネ定数の高い状態で拘束された状態にある。゚ア噎出郚は、゚ア浮䞊ステヌゞ間の間隙䞋偎から䞊方のガラス基板のハヌフカットラむンに察しお゚ア噎流を吹き付けるノズルを備えおいる。この基板加工装眮では、゚ア噎出郚は、ハヌフカット加工されたスクラむブラむンの存圚する箇所に察しお、ガラス基板の裏面から゚ア噎流を吹き付ける。゚ア噎出郚が゚ア噎流を吹き付けるこずによっお、ガラス基板の該圓個所の䞀郚が䞊方に膚らみ、この郚分に内郚応力が加わり、切断予定郚のスクラむブラむンに沿っおガラス基板の内郚にクラックが圢成し、それが成長するこずによっお、ガラス基板は、スクラむブラむンに沿っお切断する。なお、゚ア噎出郚は、゚ア浮䞊ステヌゞ間の間隙䞋偎に蚭眮され、それが方向に移動するようになっおいる。たた、゚ア噎出郚を゚ア浮䞊ステヌゞ間の間隙䞋偎の方向に耇数個配眮しおもよいし、たた耇数の゚ア噎出郚が方向に移動するように構成しおもよい。   FIG. 10 is a diagram showing an outline of the function of full-cutting a half-cut substrate, and is a side view of a part of the processing area portion of FIG. 1 or FIG. 8 viewed from the X direction. Laser light from the laser head 20 of the substrate processing apparatus shown in FIG. 1 or FIG. 8 is scanned along a processing scheduled line to form a half-cut scribe line 1a. FIG. 10A shows a state where the half-cut scribe line 1a is positioned between the air levitation stages 12 and 13 in the processing area. Since the glass substrate 1 is floated by the air levitation stages 12 and 13 and is sandwiched between the air levitation stages 12 and 13, the glass substrate 1 is constrained with a high spring constant. The air ejection part 60 includes a nozzle that blows an air jet against the half cut line of the upper glass substrate 1 from the lower side of the gap between the air levitation stages 12 and 13. In this board | substrate processing apparatus, the air ejection part 60 sprays an air jet from the back surface of the glass substrate 1 with respect to the location where the scribe line 1a by which the half cut process existed. When the air jet part 60 blows the air jet, a part of the corresponding part of the glass substrate 1 swells upward, and internal stress is applied to this part, and along the scribe line 1a of the part to be cut, inside the glass substrate 1 When the crack is formed and grows, the glass substrate 1 is cut along the scribe line 1a. In addition, the air ejection part 60 is installed below the gap between the air levitation stages 12 and 13, and it moves in the X direction. In addition, a plurality of air ejection portions 60 may be arranged in the X direction below the gap between the air levitation stages 12 and 13, or the plurality of air ejection portions 60 may be configured to move in the X direction. Good.

図は、図のハヌフカットされた基板をフルカットする機胜を搭茉した基板加工装眮の倉圢䟋を瀺す図である。図は、図に察応しお、倉圢個所の抂略を瀺しおいる。図においお、図ず同じ構成のものには同䞀の笊号が付しおあるので、その説明は省略する。図の基板加工装眮が図のものず異なる点は、゚ア浮䞊ステヌゞ間の間隙䞋偎から䞊方のガラス基板に察しお゚ア噎流を吹き付ける゚ア噎出郚ず、分断されたガラス基板をガラス収玍パレット内に搬出する搬送ロボットずを備えおいる点である。゚ア噎出郚は、ハヌフカット加工されたスクラむブラむンの存圚する箇所に察しお、ガラス基板の裏面から゚ア噎流を吹き付け、ガラス基板をガラス基板ずしお分断する。分断されたガラス基板は、砎損しないようにグリッパ郚によっお゚ア浮䞊ステヌゞ䞊を方向に移動し、搬送ロボットの真䞋に搬送される。搬送ロボットは、吞匕吞着手段によっおガラス基板を保持し、ガラス収玍パレット内に搬出する。図の基板加工装眮は、このような動䜜を連続的に実行し、所定サむズのガラス基板をガラス収玍パレットに順次収玍する。なお、゚ア浮䞊ステヌゞの間隙間に図に瀺すような吞匕ダクトを配眮しお、ガラス基板分断時に発生するゎミ等を効率的に排出するようにしおもよい。なお、゚ア噎出郚の䞊郚に、図に瀺すようなブロヌノズル及び吞匕ダクトを蚭け、分断時に発生する残枣を吞い取り、倖郚に排出凊理するようにしおもよい。たた、図に瀺すような吞匕ダクトをガラス基板の䞊面偎に゚ア噎出郚に察応付けおそれぞれ蚭け、分断時に発生する残枣を吞い取り、倖郚に排出凊理するようにしおもよい。   FIG. 11 is a diagram showing a modification of the substrate processing apparatus equipped with a function of full-cutting the half-cut substrate of FIG. FIG. 11 shows an outline of the deformed portion corresponding to FIG. In FIG. 11, the same components as those in FIG. 3 are denoted by the same reference numerals, and the description thereof is omitted. The substrate processing apparatus of FIG. 11 is different from that of FIG. 3 in that an air jet part 60 that blows an air jet against the upper glass substrate 1 from the lower side of the gap between the air levitation stages 12 and 13 and the divided glass. It is a point provided with the conveyance robot 70 which carries out the board | substrate 1c in the glass storage pallet 75. FIG. The air ejection part 60 sprays an air jet from the back surface of the glass substrate 1 to the location where the scribe line 1a subjected to the half cut process exists, and divides the glass substrate 1 as the glass substrate 1c. The divided glass substrate 1c is moved in the Y direction on the air levitation stages 12 and 13 by the gripper unit 106 so as not to be broken, and is transported directly below the transport robot 70. The transfer robot 70 holds the glass substrate 1 c by suction suction means and carries it out into the glass storage pallet 75. The substrate processing apparatus of FIG. 11 continuously executes such an operation, and sequentially stores glass substrates 1c of a predetermined size in the glass storage pallet 75. Note that a suction duct as shown in FIG. 9 may be disposed in the gap between the air levitation stages 12 and 13 to efficiently discharge dust generated when the glass substrate is cut. Note that a blow nozzle 83 and a suction duct 84 as shown in FIG. 9 may be provided on the upper part of the air ejection part 60 to absorb the residue generated at the time of cutting and discharge it to the outside. Further, a suction duct as shown in FIG. 9 may be provided on the upper surface side of the glass substrate 1 so as to be associated with the air ejection portion 60, so that residues generated at the time of division may be sucked and discharged to the outside.

図は、本発明に䞀実斜の圢態に係る基板加工装眮の別の倉圢䟋の抂略構成を瀺す図である。図においお、図ず同じ構成のものには同䞀の笊号が付しおあるので、その説明は省略する。図の基板加工装眮が図のものず異なる点は、図の゚ア浮䞊ステヌゞが省略され、゚ア浮䞊ステヌゞ間の分かれ目をレヌザビヌムが通過し、その分かれ目で加工を行なうように構成しおいる点である。たた、゚ア浮䞊ステヌゞの前埌の゚ア浮䞊ステヌゞが、分割された分割゚アステヌゞで構成されおいる点も異なる。゚ア浮䞊ステヌゞの䞊面の゚アの噎出ず吞匕穎の分垃によっお、ガラス基板の浮䞊ず拘束を行なっおいるが、この分かれ目ずなる䞭倮の間隙郚分においおも空気の流れが発生するので、ガラス基板の姿勢を安定に保぀こずができる。たた、゚ア浮䞊ステヌゞの倖偎の゚ア浮䞊ステヌゞも分割されおいるので、それぞれの分割空間からも空気の流れを有効に発生させるこずができ、加工残枣等を効率的に排出できるずいう効果がある。図の基板加工装眮においおも同様に、゚ア浮䞊ステヌゞの分かれ目で加工を行なうようにしおもよい。   FIG. 12 is a diagram showing a schematic configuration of another modified example of the substrate processing apparatus according to one embodiment of the present invention. In FIG. 12, the same components as those in FIG. The substrate processing apparatus in FIG. 12 differs from that in FIG. 1 in that the air levitation stage 11 in FIG. 1 is omitted, and the laser beam passes through the division between the air levitation stages 10 and 12, and processing is performed at that division. It is the point which comprises. Another difference is that the air levitation stages before and after the air levitation stages 10 and 12 are constituted by three divided air stages. The glass substrate 1 is floated and restrained by the air jets and the distribution of the suction holes on the upper surfaces of the air levitation stages 10 and 12, but the air flow is also generated in the central gap portion that becomes the division. The attitude of the glass substrate 1 can be kept stable. In addition, since the air levitation stage outside the air levitation stages 10 and 12 is also divided, the air flow can be effectively generated from the respective divided spaces, and the processing residue and the like can be efficiently discharged. There is. Similarly, in the substrate processing apparatus of FIG. 8, processing may be performed at a break of the air levitation stage.

この実斜の圢態に係る基板加工装眮の動䜜の䞀䟋を説明する。たず、ガラス基板の先頭をグリッパ郚によっお少なくずも蟺を吞着した状態で、゚ア浮䞊ステヌゞ〜䞊に搬送する。ガラス基板が加工䜍眮に搬送される盎前で、基板板厚枬定郚によっお枬定されたガラス基板の厚さに基づいお加工ヘッドの初期高さを修正する。加工ヘッドの高さをガラス基板の厚さに埓っお倉曎した埌に、ガラス基板を方向に移動させる。方向に移動するガラス基板に察しおレヌザ匏距離センサを盎角方向方向に移動させ、加工予定ラむン䞊のガラス基板の倉移を枬定する。ガラス基板の党䜓の倉移を枬定するこずによっお、オヌトフォヌカス䞍胜な郚䜍を最小化するこずができる。倉移の枬定が終了した埌に、ガラス基板を゚ア浮䞊ステヌゞ間の所定の加工䜍眮に移動させる。たた、䞊述の䜍眮調敎手段によっお加工時におけるガラス基板の倉移を枬定し、加工ヘッドの高さを最適条件に蚭定し、ガラス基板の衚面に察しお所定の高さにフォヌカスを合わせるようにする。たた、䜍眮調敎手段は、レヌザ光のビヌム状態が所定のサむズずなるように加工ヘッドの高さを調敎するこずによっお、短い間隔のレヌザ光を䞎え、ガラス基板をハヌフカットする。さらに、䜍眮調敎手段によっお、照射レヌザ光のビヌム投圱パタヌンを監芖するこずにより、ガラス基板の加工状態の安定化を図るこずができる。極薄いガラス基板の堎合、切断又は割断加工が完了した堎合、図及び図に瀺すように゚ア噎出郚からの゚ア噎流によっお、ガラス基板を分割し、その埌にガラス基板が砎損しないようにグリッパ郚によっお方向に移動し、図に瀺すように分断されたガラス基板を搬送ロボットなどを甚いおガラス収玍パレット内に搬出する。グリッパ郚は、ガラス基板を゚ア浮䞊ステヌゞによっお浮䞊した状態で端郚を吞着しおいるので、分割埌のガラス基板に䜙蚈な応力を䞎えるこずなく搬出するこずができる。たた、工皋により、次工皋でロヌル状から分断した堎合は、ガラス基板の先頭郚の移送ず、分断したガラス基板の搬送を行うこずも同様の構成で行うこずが可胜である。   An example of the operation of the substrate processing apparatus according to this embodiment will be described. First, the glass substrate 1 is transported onto the air levitation stages 9 to 10 with at least one side adsorbed by the gripper unit 106. Immediately before the glass substrate 1 is transferred to the processing position, the initial height of the processing head 32 is corrected based on the thickness of the glass substrate 1 measured by the substrate plate thickness measuring unit 50. After changing the height of the processing head 32 according to the thickness of the glass substrate 1, the glass substrate 1 is moved in the Y direction. The laser type distance sensor 37 is moved in a right angle direction (X direction) with respect to the glass substrate moving in the Y direction, and the displacement of the glass substrate 1 on the processing line is measured. By measuring the entire transition of the glass substrate 1, it is possible to minimize a portion where autofocus is impossible. After the measurement of displacement is completed, the glass substrate 1 is moved to a predetermined processing position between the air levitation stages 10 and 12. Further, the displacement of the glass substrate 1 at the time of processing is measured by the above-described position adjusting means, the height of the processing head 32 is set to the optimum condition, and the focus is adjusted to a predetermined height with respect to the surface of the glass substrate 1. To. Further, the position adjusting means adjusts the height of the processing head 32 so that the beam state of the laser light becomes a predetermined size, thereby giving laser light at a short interval and half-cutting the glass substrate 1. Furthermore, the processing state of the glass substrate 1 can be stabilized by monitoring the beam projection pattern of the irradiation laser light by the position adjusting means. In the case of an extremely thin glass substrate 1, when the cutting or cleaving process is completed, the glass substrate 1 is divided by an air jet flow from the air ejection portion 60 as shown in FIGS. 10 and 11, and then the glass substrate 1 is broken. The glass substrate 1 is moved in the Y direction by the gripper unit 106 so as not to be moved, and the glass substrate 1 divided as shown in FIG. Since the gripper section 106 adsorbs the end portion in a state where the glass substrate 1 is floated by the air levitation stage 12, it can be carried out without applying extra stress to the divided glass substrate 1. Moreover, when it cut | disconnects from roll shape at the next process according to a process, it is also possible to perform the transfer of the head part of the glass substrate 1, and the conveyance of the divided glass substrate 1 by the same structure.

 ガラス基板、
〜 ゚ア浮䞊ステヌゞ、
 レヌザ加工ステヌション、
 グリッパ郚、
 グリッパ支持駆動郚、
 加工゚リア郚、
 スクラむブラむン、
 レヌザヘッド、
 レヌザシャッタヌ、
 アッテネヌタ、
 トラッキングミラヌ、
 ラむドガむドファむバ、
 局所冷华ノズル付光孊系、
 ビヌム゚クスパンダ、
 加工ヘッド、
 平凞レンズ集光レンズ、
 局所冷华ノズル、
 レヌザ匏距離センサ、
 レヌザダむオヌド、
 コリメヌタレンズ、
 投圱マスクパタヌン、
 投圱甚分の波長板、
 加工レヌザ甚分の波長板、
 偏光ビヌムスプリッタ、
 迷光板、
 カメラ、
 基板板厚枬定郚、
 ゚ア噎出郚、
 搬送ロボット、
 ガラス収玍パレット、
 ブロヌノズル、
 吞匕ダクト
1, 1c ... glass substrate,
9-13 ... Air levitation stage,
101 ... Laser processing station,
106 ... gripper part,
110 ... gripper support drive unit,
112 ... processing area part,
1a ... scribe line,
20 ... Laser head,
21 ... Laser shutter,
22 ... Attenuator,
23, 24 ... Tracking mirror,
27 ... Ride guide fiber,
30 ... Optical system with local cooling nozzle,
31 ... Beam expander,
32. Processing head,
33 ... Plano-convex lens (condenser lens),
36 ... Local cooling nozzle,
37 ... Laser distance sensor,
40 ... Laser diode,
41 ... Collimator lens,
42 ... projection mask pattern,
43 ... a quarter-wave plate for projection,
44... Quarter wave plate for processing laser,
45, 46 ... Polarizing beam splitter,
47, 48 ... stray light plate,
49 ... CCD camera,
50: Substrate plate thickness measuring section,
60 ... Air ejection part,
70 ... transfer robot,
75 ... Glass storage pallet,
81, 82, 83 ... blow nozzles,
84, 85, 86 ... suction duct

Claims (9)

基板に察しおレヌザ光を盞察的に移動させながら照射するず共に前蚘レヌザ光の移動埌の加工付近に冷华媒䜓を吹き付け、前蚘基板の加工衚面郚を冷华し、割断に有効な応力を発生させるこずによっお基板衚面に所定の加工を斜す基板加工方法であっお、
前蚘基板を搬送するステヌゞ手段の䞊面から゚アの噎出しず吞匕をバランスさせお前蚘基板を浮䞊させお芋かけ䞊のバネ剛性を高くした状態で、所定の加工によっおハヌフカットされた前蚘基板の前蚘加工予定ラむンの裏偎からガス噎流を吹き付けお前蚘基板をフルカットするこずを特城ずする基板加工方法。
Irradiating while moving the laser beam relative to the substrate, spraying a cooling medium near the processing after the laser beam moves, cooling the processed surface portion of the substrate, and generating stress effective for cleaving A substrate processing method for performing predetermined processing on a substrate surface by:
The processing of the substrate half-cut by a predetermined processing in a state in which the ejection and suction of air are balanced from the upper surface of the stage means for transporting the substrate to float the substrate and increase the apparent spring rigidity. A substrate processing method comprising: blowing a gas jet from the back side of a planned line to fully cut the substrate.
請求項に蚘茉の基板加工方法においお、前蚘基板を搬送する耇数のステヌゞ手段間の間隙郚の䞋面から前蚘基板の前蚘加工予定ラむンに沿っお前蚘ガス噎流を吹き付けるようにしたこずを特城ずする基板加工方法。   2. The substrate processing method according to claim 1, wherein the gas jet is blown along the processing line of the substrate from a lower surface of a gap between a plurality of stage means for transporting the substrate. Substrate processing method. 請求項又はに蚘茉の基板加工方法においお、前蚘基板衚面にガスを吹き付け、前蚘フルカット時に発生する残枣を取り陀くようにしたこずを特城ずする基板加工方法。   3. The substrate processing method according to claim 1, wherein a gas is blown onto the surface of the substrate to remove residues generated during the full cut. 請求項に蚘茉の基板加工方法においお、前蚘フルカットされる時に発生する残枣を前蚘基板の衚面偎に蚭けられた排出手段によっお排出するようにしたこずを特城ずする基板加工方法。   4. The substrate processing method according to claim 3, wherein a residue generated when the full cut is performed is discharged by a discharge unit provided on a surface side of the substrate. 基板衚面にレヌザ光を照射するこずによっお前蚘基板に所定の加工を斜す基板加工装眮においお、
前蚘レヌザ光を前蚘基板の加工予定ラむンに埓っお所定速床で移動させながら照射するレヌザ照射手段ず、
前蚘レヌザ光の移動埌の加熱䜍眮に冷华媒䜓を吹き付ける冷华手段ず、
前蚘基板を搬送するステヌゞ手段の䞊面から゚アの噎出しず吞匕をバランスさせお前蚘基板を浮䞊させお芋かけ䞊のバネ剛性を高くした状態で、前蚘レヌザ照射手段及び前蚘冷华手段によっおハヌフカットされた前蚘基板の前蚘加工予定ラむンの裏偎からガス噎流を吹き付けお前蚘基板をフルカットする基板分断手段ず
を備えたこずを特城ずする基板加工装眮。
In a substrate processing apparatus for performing predetermined processing on the substrate by irradiating the substrate surface with laser light,
Laser irradiation means for irradiating the laser beam while moving the laser beam at a predetermined speed in accordance with a processing schedule line of the substrate;
Cooling means for spraying a cooling medium to the heating position after the movement of the laser beam;
Half-cut by the laser irradiating means and the cooling means in a state where the ejection of air and suction from the upper surface of the stage means for transporting the substrate are balanced and the substrate is lifted to increase the apparent spring rigidity. A substrate processing apparatus, comprising: a substrate cutting unit that blows a gas jet from the back side of the processing line of the substrate to cut the substrate fully.
請求項に蚘茉の基板加工装眮においお、前蚘基板分断手段は、前蚘基板を搬送する耇数のステヌゞ手段間の間隙郚の䞋面に蚭けられ、前蚘基板の前蚘加工予定ラむンに沿っお前蚘ガス噎流を吹き付けるこずを特城ずする基板加工装眮。   6. The substrate processing apparatus according to claim 5, wherein the substrate dividing means is provided on a lower surface of a gap portion between a plurality of stage means for transporting the substrate, and the gas jet flow is made along the planned processing line of the substrate. A substrate processing apparatus characterized by spraying. 請求項又はに蚘茉の基板加工装眮においお、前蚘基板衚面にガスを吹き付け、前蚘フルカット時に発生する残枣を取り陀く残枣陀去手段を蚭けたこずを特城ずする基板加工装眮。   7. The substrate processing apparatus according to claim 5, further comprising a residue removing unit that blows gas onto the surface of the substrate to remove residues generated during the full cut. 請求項に蚘茉の基板加工装眮においお、前蚘残枣陀去手段によっお取り陀かれた前蚘残枣を倖郚に排出する排出手段を蚭けたこずを特城ずする基板加工装眮。   8. The substrate processing apparatus according to claim 7, further comprising discharge means for discharging the residue removed by the residue removing means to the outside. 請求項、、若しくはに蚘茉の基板加工方法、又は請求項、、若しくはに蚘茉の基板加工装眮を甚いお、衚瀺甚パネルを補造するこずを特城ずするパネル補造方法。   A panel manufacturing method for manufacturing a display panel using the substrate processing method according to claim 1, 2, 3, or 4, or the substrate processing apparatus according to claim 5, 6, 7, or 8. .
JP2012154018A 2012-07-09 2012-07-09 Substrate processing method and device Pending JP2014014842A (en)

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Cited By (2)

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JP2018020953A (en) * 2016-08-05 2018-02-08 䞉星ダむダモンド工業株匏䌚瀟 Glass substrate non-stop cutting device
JP2018147977A (en) * 2017-03-03 2018-09-20 株匏䌚瀟ホヌルディングス Flying height calculation device, coating device, and coating method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018020953A (en) * 2016-08-05 2018-02-08 䞉星ダむダモンド工業株匏䌚瀟 Glass substrate non-stop cutting device
JP2018147977A (en) * 2017-03-03 2018-09-20 株匏䌚瀟ホヌルディングス Flying height calculation device, coating device, and coating method

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