JP2014086613A - Photoelectric conversion module - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve a moisture resistance reliability of a photoelectric conversion module by producing a sealing material and a sealing material in a photoelectric conversion module with a desired size.
SOLUTION: A photoelectric conversion module 200 includes a step of preparing a first substrate 1 having a photoelectric conversion layer on a main surface, a sealing material 20 placed on a central portion of the main surface, and an outer peripheral portion of the main surface. A step of placing the frame member 21F surrounding the sealing material 20 on the surface, a step of placing the second substrate 12 on the sealing material 20 and the frame member 21F, and a frame by heating the sealing material 20 The step of adhering the first substrate 1 and the second substrate 12 through the sealing material 20 inside the member 21F, the first substrate 1 and the second substrate 12 around the sealing material 20 by removing the frame member 21F A step of forming the gap portion 21S sandwiched between the two, and a step of filling the gap portion 21S with the sealing material 21.
[Selection] Figure 4

Description

  The present invention relates to a photoelectric conversion module in which a photoelectric conversion layer is sealed with a sealing material.

  In recent years, photovoltaic power generation that converts light energy into electric energy has attracted attention as energy problems and environmental problems become more serious.

  There are various types of photoelectric conversion modules used for photovoltaic power generation. Among them, those using a compound semiconductor thin film such as CIS (copper indium selenide) or CIGS (copper indium gallium selenide), or a thin film photoelectric conversion layer such as an amorphous silicon thin film, Research and development are being promoted because a large-area photoelectric conversion module can be easily manufactured at low cost.

  The thin film photoelectric conversion module includes a photoelectric conversion device in which a lower electrode layer, a photoelectric conversion layer, and an upper electrode layer are sequentially formed on a first substrate such as a glass substrate. Further, in such a photoelectric conversion module, a second substrate made of white tempered glass or the like is laminated on the above photoelectric conversion device via a sealing material such as ethylene vinyl acetate copolymer (hereinafter referred to as EVA). It is integrated.

  Moreover, in such a photoelectric conversion module, when moisture permeates from the outside, the photoelectric conversion layer and the like may deteriorate, and the photoelectric conversion efficiency may decrease. Therefore, in such a photoelectric conversion module, a sealing material for blocking moisture is disposed on the outer peripheral portion (see, for example, Patent Document 1).

  The photoelectric conversion module is disposed between the first substrate and the second substrate so that the sealing material surrounds the sealing material, and these are pressurized and heated to cure the sealing material and the sealing material. Produced.

JP 2011-231309 A

  In the production of the photoelectric conversion module, a part of the sealing material may extend outward during pressurization and heating, and the width of the sealing material at that part may be shortened. In that case, the function of preventing moisture from entering the sealing material is lowered, and the photoelectric conversion layer is easily deteriorated.

  This invention is made | formed in view of the said subject, It aims at producing the sealing material and sealing material in a photoelectric conversion module favorably with a desired magnitude | size, and improving the moisture-proof reliability of a photoelectric conversion module. .

The photoelectric conversion module which concerns on one Embodiment of this invention is a process which prepares the 1st board | substrate which has a photoelectric converting layer in a main surface, and while mounting a sealing material on the center part of the said main surface, the said main surface A step of placing a frame member that surrounds the sealing material on the outer peripheral portion, a step of placing a second substrate on the sealing material and the frame member, and heating the sealing material. Adhering the first substrate and the second substrate through the sealing material inside the frame member; removing the frame member and surrounding the first substrate and the second substrate around the sealing material; And a step of forming a gap portion sandwiched between and a step of filling the gap portion with a sealing material.

  According to the photoelectric conversion module according to an embodiment of the present invention, the sealing material and the sealing material can be favorably produced with a desired size, and the moisture resistance reliability of the photoelectric conversion module can be improved.

It is a principal part expansion perspective view which shows the photoelectric conversion apparatus in the photoelectric conversion module which concerns on one Embodiment. It is sectional drawing of the photoelectric conversion apparatus of FIG. It is a perspective view showing the whole photoelectric conversion module concerning one embodiment. It is sectional drawing of the photoelectric conversion module of FIG. It is sectional drawing which shows typically the mode in the middle of manufacture of a photoelectric conversion apparatus. It is sectional drawing which shows typically the mode in the middle of manufacture of a photoelectric conversion apparatus. It is sectional drawing which shows typically the mode in the middle of manufacture of a photoelectric conversion apparatus. It is sectional drawing which shows typically the mode in the middle of manufacture of a photoelectric conversion apparatus. It is sectional drawing of the photoelectric conversion module which concerns on a 1st modification. It is sectional drawing of the photoelectric conversion module which concerns on a 2nd modification. It is sectional drawing of the photoelectric conversion module which concerns on a 3rd modification. It is a top view of the photoelectric conversion module which concerns on a 4th modification. It is sectional drawing of the photoelectric conversion module which concerns on a 5th modification.

  Hereinafter, a photoelectric conversion module according to an embodiment of the present invention will be described in detail with reference to the drawings. In the drawings, parts having the same configuration and function are denoted by the same reference numerals, and redundant description is omitted in the following description. Further, the drawings are schematically shown, and the sizes, positional relationships, and the like of various structures in the drawings are not accurately illustrated. 1 to 13 have right-handed XYZ coordinates with the X-axis being the direction of arrangement of photoelectric conversion cells to be described later. First, a photoelectric conversion device that is a part of the photoelectric conversion module will be described.

<Configuration of photoelectric conversion device>
FIG. 1 is an enlarged perspective view of a main part of the photoelectric conversion device 11, and FIG. 2 is an XZ sectional view thereof. The photoelectric conversion device 11 includes a plurality of photoelectric conversion cells 10 arranged along the X-axis direction. The photoelectric conversion cell 10 includes a lower electrode layer 2, a first semiconductor layer 3 having a first conductivity type, a second semiconductor layer 4 having a second conductivity type different from the first conductivity type, The upper electrode layer 5 is laminated in order. For example, if the first conductivity type is p-type, the second conductivity type is n-type, and vice versa. These first semiconductor layer 3 and second semiconductor layer 4 form a photoelectric conversion layer capable of separating charges well.

  In the photoelectric conversion device 11, the upper electrode layer 5 of one adjacent photoelectric conversion cell 10 and the lower electrode layer 2 of the other photoelectric conversion cell 10 are electrically connected via a connection conductor 6. With such a configuration, adjacent photoelectric conversion cells 10 are connected in series. And in the edge part of the photoelectric conversion apparatus 11, the extraction electrode 2a electrically connected with one electrode of the photoelectric conversion cell 10 connected in series is provided, The exterior of the photoelectric conversion apparatus 11 is provided in this extraction electrode 2a. A wiring conductor 13a for electrical connection is connected. Similarly, an extraction electrode 2b electrically connected to the other electrode of the photoelectric conversion cell 10 connected in series is provided at the opposite end of the photoelectric conversion device 11, and photoelectric conversion is performed on the extraction electrode 2b. A wiring conductor 13b for electrical connection with the outside of the device 11 is connected.

  1 and 2, only two photoelectric conversion cells 10 are shown for convenience of illustration, but an actual photoelectric conversion device 11 has an X-axis direction in the drawing or a Y-axis direction in the drawing. In addition, a large number of photoelectric conversion cells 10 are arranged in a plane (two-dimensionally).

  The first substrate 1 is for supporting the photoelectric conversion layer. Examples of the material used for the first substrate 1 include glass, ceramics, resin, and metal. As the first substrate 1, for example, blue plate glass (soda lime glass) having a thickness of about 1 to 3 mm may be used.

  The lower electrode layer 2 (lower electrode layers 2 a to 2 d) is a conductor such as Mo, Al, Ti, or Au provided on the first substrate 1. The lower electrode layer 2 is formed to a thickness of about 0.2 μm to 1 μm using a known thin film forming method such as sputtering or vapor deposition.

  The first semiconductor layer 3 is a semiconductor layer having the first conductivity type. The first semiconductor layer 3 has a thickness of about 1 μm to 3 μm, for example. The material of the first semiconductor layer 3 is not particularly limited, and a thin film semiconductor layer such as a compound semiconductor thin film or an amorphous silicon thin film is used. From the viewpoint of having a relatively high photoelectric conversion efficiency, for example, an I-III-VI group compound, an I-II-IV-VI group compound, an II-VI group compound or the like is used as the first semiconductor layer 3. Also good.

An I-III-VI group compound is a group consisting of a group IB element (also referred to as a group 11 element), a group III-B element (also referred to as a group 13 element), and a group VI-B element (also referred to as a group 16 element). A compound. Examples of the I-III-VI group compound include CuInSe ₂ (also referred to as copper indium selenide, CIS), Cu (In, Ga) Se ₂ (also referred to as copper indium selenide / gallium, CIGS), Cu ( In, Ga) (Se, S) ₂ (also referred to as diselene, copper indium sulphide, gallium, or CIGSS). Alternatively, the first semiconductor layer 3 may be composed of a multi-component compound semiconductor thin film such as copper indium selenide / gallium having a thin film of selenite / copper indium sulfide / gallium layer as a surface layer. The I-III-VI group compound has a relatively high light absorption coefficient, and good photoelectric conversion efficiency can be obtained even if the first semiconductor layer 3 is thin.

The I-II-IV-VI group compound includes an IB group element, an II-B group element (also referred to as a group 12 element), an IV-B group element (also referred to as a group 14 element), and a VI-B group element. It is a compound semiconductor. Examples of the I-II-IV-VI group compound include Cu ₂ ZnSnS ₄ (also referred to as CZTS) and Cu ₂ ZnSnS _4-x Se _x (also referred to as CZTSSe. Note that x is a number greater than 0 and smaller than 4. And Cu ₂ ZnSnSe ₄ (also referred to as CZTSe).

  The II-VI group compound is a compound semiconductor of a II-B group element and a VI-B group element. CdTe etc. are mentioned as a II-VI group compound.

  The second semiconductor layer 4 is a semiconductor layer having a second conductivity type different from that of the first semiconductor layer 3. The second semiconductor layer 4 may be formed by stacking a material different from that of the first semiconductor layer 3 on the first semiconductor layer 3, or the surface portion of the first semiconductor layer 3 may be other than the first semiconductor layer 3. It may be modified by elemental doping.

The second semiconductor layer 4 includes CdS, ZnS, ZnO, In ₂ S ₃ , In ₂ Se ₃ , In (OH, S), (Zn, In) (Se, OH), and (Zn, Mg) O. Etc. In this case, the second semiconductor layer 4 is formed with a thickness of 10 to 200 nm by, for example, a chemical bath deposition (CBD) method. In (OH, S) refers to a compound mainly containing In, OH, and S. (Zn, In) (Se, OH) refers to a compound mainly containing Zn, In, Se, and OH. (Zn, Mg) O refers to a compound mainly containing Zn, Mg and O.

  As shown in FIGS. 1 and 2, an upper electrode layer 5 may be further provided on the second semiconductor layer 4. The upper electrode layer 5 is a layer having a lower resistivity than the second semiconductor layer 4, and carriers generated in the first semiconductor layer 3 and the second semiconductor layer 4 are extracted well. From the viewpoint of further increasing the photoelectric conversion efficiency, the resistivity of the upper electrode layer 5 may be less than 1 Ω · cm and the sheet resistance may be 50 Ω / □ or less.

  The upper electrode layer 5 is a 0.05 to 3 μm transparent conductive film such as ITO or ZnO. In order to improve translucency and conductivity, the upper electrode layer 5 may be composed of a semiconductor having the same conductivity type as the second semiconductor layer 4. The upper electrode layer 5 can be formed by sputtering, vapor deposition, chemical vapor deposition (CVD), or the like.

  Further, as shown in FIGS. 1 and 2, a collecting electrode 7 may be further formed on the upper electrode layer 5. The current collecting electrode 7 is for taking out the carriers generated in the first semiconductor layer 3 and the second semiconductor layer 4 more satisfactorily. For example, as shown in FIG. 1, the collector electrode 7 is formed in a linear shape from one end of the photoelectric conversion cell 10 to the connection conductor 6. As a result, the current generated in the first semiconductor layer 3 and the fourth semiconductor layer 4 is collected by the current collecting electrode 7 via the upper electrode layer 5, and is supplied to the adjacent photoelectric conversion cell 10 via the connection conductor 6. Good conductivity.

  The collector electrode 7 may have a width of 50 to 400 μm from the viewpoint of increasing the light transmittance to the first semiconductor layer 3 and having good conductivity. The current collecting electrode 7 may have a plurality of branched portions.

  The collector electrode 7 is formed, for example, by printing a metal paste in which a metal powder such as Ag is dispersed in a resin binder or the like in a pattern and curing it.

  In FIGS. 1 and 2, the connection conductor 6 is a conductor provided in a groove that penetrates (divides) the first semiconductor layer 3, the second semiconductor layer 4, and the second electrode layer 5. The connection conductor 6 can be made of metal, conductive paste, or the like. In FIG. 1 and FIG. 2, the collector electrode 7 is extended to form the connection conductor 6, but the present invention is not limited to this. For example, the upper electrode layer 5 may be stretched.

<Configuration of photoelectric conversion module>
Next, the photoelectric conversion module will be described in detail. FIG. 3 is a perspective view showing the entire photoelectric conversion module 200 according to one embodiment, and FIG. 4 is a cross-sectional view thereof.

  The photoelectric conversion module 200 includes a light-transmitting second substrate 12 via a light-transmitting sealing material 20 on the photoelectric conversion device 11 illustrated in FIGS. 1 and 2. In addition, a sealing material 21 that closes the gap between the first substrate 1 and the second substrate 12 is provided outside the sealing material 20.

  The sealing material 20 is for protecting the photoelectric conversion cell 10 and is provided from the photoelectric conversion cell 10 to the first substrate 1. Moreover, the sealing material 20 has translucency with respect to the light which the light absorption layer 3 absorbs. Examples of such a sealing material 20 include a resin mainly composed of ethylene vinyl acetate copolymer (EVA) and a resin mainly composed of polyvinyl butyral.

The sealing material 21 is provided along the side surface of the sealing material 20 so as to surround the periphery of the sealing material 20, and as shown in FIG.
A gap between the substrate 1 and the second substrate 12 is filled.

  The sealing material 21 is for reducing moisture from entering the photoelectric conversion cell 10, and a member having a moisture permeability lower than that of the sealing material 20 is used. As such a sealing material 21, a resin such as polyethylene, an elastic body made of rubber such as butyl rubber or ethylene propylene rubber, or a mixture of the above-described resin and rubber can be used.

Further, as the sealing material 21, a polymer material in which an adsorbent is dispersed may be used. As such an adsorbent, those having the property of chemically adsorbing moisture may be used, or those having the property of physically adsorbing moisture may be used. The adsorbent that chemically adsorbs moisture has a property of chemically adsorbing with moisture and chemical reaction. For example, calcium oxide (CaO), sodium oxide (Na ₂ O), magnesium oxide (MgO), chloride calcium (CaCl _2), anhydrous sodium sulfate _(Na 2 _SO 4), and the like copper sulfate anhydrous salt (CuSO ₄₎ or calcium sulfate (CaSO _4). An adsorbent that physically adsorbs moisture adsorbs moisture by van der Waals force generated between the surface of the adsorbent and moisture. For example, molecular sieves such as zeolite, silica gel (SiO ₂ .nH ₂ O), inorganic materials having a porous surface such as alumina, allophane or activated carbon.

  In the photoelectric conversion module 200, the wiring conductors 13a and 13b are electrically connected to the extraction electrode portions 2a and 2b on the photoelectric conversion device 11, respectively. Further, as shown in FIG. 3, the other end of the wiring conductors 13 a and 13 b is led out to the back surface through a hole 1 a penetrating the first substrate 1 in the vertical direction, and the back surface (non- It is connected to a terminal box arranged on the light receiving surface. Then, the electric power generated by the photoelectric conversion module 200 is output to an external circuit through this terminal box.

  For the wiring conductors 13a and 13b, for example, a metal foil such as copper (Cu) having a thickness of about 0.1 to 0.5 mm and a width of about 1 to 7 mm is used. Also. The surface of the metal foil may be coated with tin, nickel, solder, or the like by plating or the like in order to improve electrical connection with the extraction electrode portions 2a, 2b.

<Method for producing photoelectric conversion module>
Next, a method for manufacturing the photoelectric conversion module 200 will be described in detail. FIGS. 5-8 is sectional drawing which shows typically the mode in the middle of manufacture of the photoelectric conversion module 200 which concerns on one Embodiment. In addition, each sectional drawing shown by FIGS. 5-8 shows the mode in the middle of manufacture of the part corresponding to the cross section shown by FIG.

  First, as shown in FIG. 5, a first substrate 1 having a plurality of photoelectric conversion cells 10 on the main surface is prepared.

  Next, as shown in FIG. 6, the sealing material 20 is placed on the central portion of the main surface of the first substrate 1 having the plurality of photoelectric conversion cells 10, and the outer periphery of the main surface of the first substrate 1. A frame member 21F surrounding the sealing material 20 is placed on the portion. The frame member 21 </ b> F is made of a material that can be stably maintained in shape even at a temperature when the sealing material 20 is heated and cured, and that is difficult to adhere to the sealing material 20. As the frame member 21F, for example, a fluororesin such as polytetrafluoroethylene (PTFE), hexafluoropropylene copolymer (FEP), perfluoroalkyl vinyl ether copolymer (PFA), or a metal whose surface is coated with PTFE A plate or the like is used.

Next, as shown in FIG. 7, the 2nd board | substrate 12 is mounted on the sealing material 20 and the frame member 21F. Then, by pressurizing and heating these laminates and thermosetting the sealing material 20, an area inside the frame member 21 </ b> F on the first substrate 1 and an area inside the frame member 21 </ b> F on the second substrate 12 are formed. And are bonded through the sealing material 20. At this time, the sealing material 20 tends to extend to the outer peripheral side of the first substrate 1 and the second substrate 12, but the extension of the sealing material 20 can be effectively suppressed by the frame member 21F. The sealing material 20 is bonded to the entire inner region of the frame member 21F in the first substrate 1 and the entire inner region of the frame member 21F in the second substrate 12, so that the sealing material 20 at the time of mass production Variations in shape and thickness can be further reduced.

  Next, as shown in FIG. 8, the frame member 21 </ b> F is removed, and a gap portion 21 </ b> S sandwiched between the first substrate 1 and the second substrate 12 is formed around the sealing material 20. Then, the photoelectric conversion module 200 shown in FIG. 4 is manufactured by filling the gap 21 </ b> S with the sealing material 21. Filling the gap 21S with the sealing material 21 can be performed by filling the gap 21S with a liquid or sheet-like sealing material 21 and thermally curing it.

  The manufacturing method of the photoelectric conversion module as described above can favorably produce the sealing material 21 having a desired width, and can improve the moisture resistance reliability of the photoelectric conversion module 200.

<First Modification of Photoelectric Conversion Module>
Next, a modification of the photoelectric conversion module of the present invention will be described. FIG. 9 is a cross-sectional view showing a first modification of the photoelectric conversion module. In the photoelectric conversion module 300 shown in FIG. 9, the same reference numerals as those in FIG. 4 are given to portions having the same configuration and functions as those of the photoelectric conversion module 200 shown in FIG. 4 described above. In the photoelectric conversion module 300, the light reflecting member 32 is disposed at the interface between the sealing material 30 and the sealing material 31. With such a configuration, light that enters the photoelectric conversion module 300 and tends to travel from the sealing material 30 to the sealing material 31 side is favorably reflected by the light reflecting member 32 and easily travels to the photoelectric conversion cell 10 side. can do. As a result, the photoelectric conversion efficiency of the photoelectric conversion module 300 can be increased.

  The light reflecting member 32 may have a light reflectance of 20% or more with respect to light having a wavelength used for photoelectric conversion in the photoelectric conversion cell 10. Examples of such a light reflecting portion 32 include light reflecting metal members such as gold, silver, nickel, palladium, and platinum, and light reflecting inorganic members such as silica and titania. The light reflecting member 32 may be a translucent member in which metal particles or inorganic particles are dispersed. For example, a material in which light-reflective metal particles such as gold, silver, nickel, palladium, and platinum or light-reflective inorganic particles such as silica and titania are dispersed in a light-transmitting member such as a resin is used. May be.

  Such a photoelectric conversion module 300 can be manufactured as follows. First, similarly to the method for manufacturing the photoelectric conversion module 200 described above, the first substrate 1 and the second substrate 12 having the photoelectric conversion cells 10 on the main surface are laminated via the sealing material 30 and the frame member, The first substrate 1 and the second substrate 12 are bonded via the sealing material 30. Then, the frame member is removed to form a gap between the first substrate 1 and the second substrate 12 around the sealing material 30. Thereafter, the light reflecting member 32 is disposed so as to surround the sealing material 30 in the gap portion, and then the sealing material 31 is filled in the gap portion so as to surround the sealing material 30 and the light reflecting member 32, thereby the photoelectric conversion module. 300 can be made. By such a method, the light reflecting member 32 can be accurately arranged.

  In addition, as an arrangement method of the light reflecting member 32 between the sealing material 30 and the sealing material 31, for example, when the light reflecting member 32 is a metal member, a metal member molded in a rod shape or the like is used as the sealing material 30. It may be arranged along the outer peripheral surface of this and fixed by the sealing material 31. Or you may produce the light reflection member 32 which consists of a metal member by plating on the outer peripheral surface of the sealing material 30. FIG. Further, when the light reflecting member 32 is an inorganic member, it can be produced by forming a film of silica, titania or the like on the outer peripheral surface of the sealing material 30 by a sol-gel method or the like. In addition, when the light reflecting member 32 is a light transmissive member in which metal particles are dispersed or a light transmissive member in which inorganic particles are dispersed, for example, a light transmissive member such as a resin, gold, silver, nickel, Light-reflective metal particles such as palladium and platinum, or those in which inorganic particles such as silica and titania are dispersed may be deposited.

<Second Modification of Photoelectric Conversion Module>
FIG. 10 is a cross-sectional view showing a second modification of the photoelectric conversion module. In the photoelectric conversion module 400 shown in FIG. 10, the same reference numerals as those in FIG. 4 are given to parts having the same configuration and functions as those of the photoelectric conversion module 200 shown in FIG. 4 described above. In the photoelectric conversion module 400, a gap 42 is provided between the sealing material 41 and the sealing material 40. With such a configuration, the difference in refractive index between the sealing material 40 and the gap 42 is increased, and the light traveling from the sealing material 40 to the sealing material 41 is more favorable at the interface between the sealing material 40 and the gap 42. It can be reflected toward the photoelectric conversion cell 10 side.

  Such a photoelectric conversion module 400 can be manufactured as follows. First, similarly to the method for manufacturing the photoelectric conversion module 200 described above, the first substrate 1 and the second substrate 12 having the photoelectric conversion cells 10 on the main surface are laminated via the sealing material 40 and the frame member, The first substrate 1 and the second substrate 12 are bonded via the sealing material 40. Then, the frame member is removed to form a gap portion sandwiched between the first substrate 1 and the second substrate 12 around the sealing material 40. Thereafter, the photoelectric conversion module 400 can be manufactured by surrounding the sealing material 40 in the gap and filling the gap with the sealing material 41 so as to have a gap 42 between the sealing material 40. . By such a method, the interface between the sealing material 40 and the gap 42 can be accurately produced.

<Third Modification of Photoelectric Conversion Module>
FIG. 11 is a cross-sectional view showing a third modification of the photoelectric conversion module. In the photoelectric conversion module 500 shown in FIG. 11, the same reference numerals as those in FIG. 4 are given to portions having the same configuration and functions as those of the photoelectric conversion module 200 shown in FIG. 4 described above. In the photoelectric conversion module 500, the outer peripheral surface of the sealing material 50 is uneven in the Z-axis direction. With such a configuration, the contact area between the sealing material 50 and the sealing material 51 disposed around the sealing material 50 is increased, and the adhesion between them is increased.

  From the viewpoint of further improving the adhesion between the sealing material 50 and the sealing material 51, the concave-convex shape of the outer peripheral surface of the sealing material 50 has an interval between the convex portions of about 100 to 1000 μm, and the height of the convex portions and the concave portions. The difference may be about 50 to 5000 μm.

  Such a photoelectric conversion module 500 can be manufactured as follows. First, similarly to the method of manufacturing the photoelectric conversion module 200 described above, the first substrate 1 and the second substrate 12 having the photoelectric conversion cells 10 on the main surface are laminated via the sealing material 50 and the frame member, The first substrate 1 and the second substrate 12 are bonded through the sealing material 50. At this time, the inner peripheral surface of the frame member is made uneven in advance. Thereby, the outer side surface of the sealing material 50 becomes uneven | corrugated shape corresponding to the shape of the inner peripheral surface of a frame member.

  Further, the photoelectric conversion module 500 is not limited to the configuration in which the sealing material 51 is in contact with the sealing material 50 as illustrated in FIG. 11, and light reflection is performed between the sealing material 50 and the sealing material 51 as in the first modification. You may have a member. In this case, since the interface between the sealing material 50 and the light reflecting member is uneven, the adhesion between the sealing material 50 and the light reflecting member is increased, and light is scattered to favorably toward the photoelectric conversion cell 10 side. Can guide light.

  From the viewpoint of further improving the adhesion and light scattering properties at the interface between the sealing material 50 and the light reflecting member, the concave-convex shape of the outer peripheral surface of the sealing material 50 has an interval between convex portions of about 100 to 1000 μm. The difference in height between the part and the recess may be about 50 to 5000 μm.

  Furthermore, the photoelectric conversion module 500 may have a gap between the sealing material 50 and the sealing material 51 as in the second modification. In this case, since the interface between the sealing material 50 and the gap is uneven, the light is scattered and can be guided well to the photoelectric conversion cell 10 side.

  From the viewpoint of further improving the light scattering property at the interface between the sealing material 50 and the gap, the uneven shape on the outer peripheral surface of the sealing material 50 has an interval between the convex portions of about 100 to 1000 μm, and the height of the convex portions and the concave portions. The difference in thickness may be about 50 to 5000 μm.

<Fourth Modification of Photoelectric Conversion Module>
FIG. 12 is a plan view showing a fourth modification of the photoelectric conversion module. FIG. 12 is a plan view of the photoelectric conversion device viewed from the second substrate side, that is, the + Z side, and the second substrate is omitted so that the positional relationship between the sealing material and the sealing material can be clearly understood. In the photoelectric conversion module 600 shown in FIG. 12, the same reference numerals as those in FIG. 4 are given to portions having the same configuration and function as those of the photoelectric conversion module 200 shown in FIG. 4 described above. In the photoelectric conversion module 600, the outer peripheral surface of the sealing material 60 is uneven in the X-axis direction or the Y-axis direction. With such a configuration, the contact area between the sealing material 60 and the sealing material 61 disposed around the sealing material 60 is increased, and the adhesion between them is increased.

  From the viewpoint of further improving the adhesion between the sealing material 60 and the sealing material 61, the concave-convex shape of the outer peripheral surface of the sealing material 60 has an interval between the convex portions of about 1 to 1000 mm, and the height of the convex portions and the concave portions. The difference may be about 10 μm to 10 mm.

  Similar to the third modification, such a photoelectric conversion module 600 can be manufactured using a frame member having an inner peripheral surface that has been previously uneven.

  A configuration in which one photoelectric conversion module has both the configuration of the third modification and the configuration of the fourth modification may be employed. That is, the outer peripheral surface of the sealing material may be uneven in the X-axis direction or Y-axis direction, and may also be uneven in the Z-axis direction.

<Fifth Modification of Photoelectric Conversion Module>
FIG. 13 is a cross-sectional view showing a fifth modification of the photoelectric conversion module. In the photoelectric conversion module 700 shown in FIG. 13, the same reference numerals as those in FIG. 4 are given to portions having the same configuration and functions as those of the photoelectric conversion module 200 shown in FIG. 4 described above. The photoelectric conversion module 700 is inclined so that the outer peripheral surface of the sealing material 70 is positioned closer to the inside of the first substrate 1. With such a configuration, the width of the sealing material 71 is increased on the first substrate 1 side to satisfactorily reduce the intrusion of moisture into the photoelectric conversion cell 10, and the width of the sealing material 71 is decreased on the second substrate 2 side. As a result, it is possible to satisfactorily reduce the shielding material 71 from blocking light traveling in an oblique direction with respect to the main surface of the first substrate 1.

  Such a photoelectric conversion module 700 can be manufactured as follows. First, similarly to the method for manufacturing the photoelectric conversion module 200 described above, the first substrate 1 and the second substrate 12 having the photoelectric conversion cell 10 on the main surface are laminated via the sealing material 70 and the frame member, The first substrate 1 and the second substrate 12 are bonded through the sealing material 70. At this time, the inner peripheral surface of the frame member is inclined in advance so as to be positioned closer to the first substrate 1. Thereby, the outer peripheral surface of the sealing material 70 becomes an inclined surface corresponding to the shape of the inner peripheral surface of the frame member.

  Further, the photoelectric conversion module 700 is not limited to the configuration in which the sealing material 71 is in contact with the sealing material 70 as illustrated in FIG. 13, and light reflection is performed between the sealing material 70 and the sealing material 71 as in the first modification. You may have a member. In this case, light can be favorably guided to the photoelectric conversion cell 10 side by the inclined interface between the sealing material 70 and the light reflecting member.

  Further, the photoelectric conversion module 700 may have a gap between the sealing material 70 and the sealing material 71 as in the second modification. In this case, light can be guided well to the photoelectric conversion cell 10 side by the inclined interface between the sealing material 70 and the gap.

  Note that the present invention is not limited to the above-described embodiment, and various modifications may be made without departing from the scope of the present invention.

1: first substrate 2: lower electrode layer 3: first semiconductor layer 4: second semiconductor layer 5: upper electrode layer 10: photoelectric conversion cell 11: photoelectric conversion device 12: second substrate 20, 30, 40, 50, 60, 70: Sealing material 21F: Frame member 21S: Gap portion 21, 31, 41, 51, 61, 71: Sealing material 32: Light reflecting member 42: Air gap 200, 300, 400, 500, 600, 700 : Photoelectric conversion module

Claims (5)

Preparing a first substrate having a photoelectric conversion layer on a main surface;
Placing a sealing material on a central portion of the main surface and placing a frame member surrounding the sealing material on an outer peripheral portion of the main surface;
Placing the second substrate on the sealing material and the frame member;
Heating the sealing material to bond the first substrate and the second substrate through the sealing material inside the frame member;
Removing the frame member to form a gap sandwiched between the first substrate and the second substrate around the sealing material;
And a step of filling the gap portion with a sealing material.   The method for producing a photoelectric conversion module according to claim 1, further comprising a step of arranging a light reflecting member on an outer peripheral surface of the sealing material before the step of filling the sealing material.   The method for manufacturing a photoelectric conversion module according to claim 1, wherein a gap is provided between the sealing material and the sealing material in the step of filling the gap portion with the sealing material.   The method for manufacturing a photoelectric conversion module according to any one of claims 1 to 3, wherein a material having irregularities on an inner peripheral surface is used as the frame member.   5. The method for manufacturing a photoelectric conversion module according to claim 1, wherein the frame member has an inner peripheral surface that is inclined so as to be positioned on the inner side as it approaches the first substrate. 6.

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