JP2014069981A - Substrate processing device and substrate processing method - Google Patents

Abstract

Provided are a substrate processing apparatus and a substrate processing method capable of reducing processing time while suppressing a decrease in processing yield.
A substrate processing apparatus irradiates a laser beam to a film forming portion 2 for forming a first protective film on a first surface of a substrate, and a first protective film on the first surface. The film removing unit 3 for partially removing the first protective film on the first surface and the substrate exposing unit are formed so as to form at least two linear substrate exposed units on the first surface. The substrate is treated with an etching solution, and two preliminary linear recesses are formed on the first surface, and the pre-etched portion 4 is formed between the recesses at a predetermined depth from the first surface. A laser beam is focused and irradiated on the position inside the substrate, and an internal processing portion 5 that forms a crack portion or a modified portion inside the substrate and a substrate on which the crack portion or the modified portion is formed are etched with an etching solution. And a main etching section 6 for processing and cutting.
[Selection] Figure 1

Description

  Embodiments described herein relate generally to a substrate processing apparatus and a substrate processing method.

  The substrate processing apparatus is an apparatus that performs processing for cutting a brittle material substrate (for example, a glass substrate, a silicon substrate, a ceramic substrate, or the like) into a desired shape. This substrate processing apparatus is widely used in the manufacturing process of electronic components such as semiconductor devices and liquid crystal display devices. An example of the glass substrate is a tempered glass substrate (for example, a chemically tempered glass substrate). The chemically strengthened glass substrate is a glass substrate in which a stress generation layer (strengthening layer) is formed at a depth of several tens of μm from the surface of the glass substrate by chemical treatment.

  Usually, as a method of cutting a tempered glass substrate, a resist material (protective film) having an etching solution resistance is applied to the glass substrate, and a glass substrate exposed portion having a desired shape is formed through an exposure and development process, Thereafter, a method of etching and cutting the glass substrate with an etching solution has been proposed. There has also been proposed a method in which a resist material is partially removed directly by a laser beam without passing through exposure and development steps to form a glass substrate exposed portion having a desired shape. Furthermore, a method has been proposed in which a microcrack or an altered portion is formed inside a glass substrate by laser irradiation without using a resist material before etching.

JP 2005-219960 A

  The problem to be solved by the present invention is to provide a substrate processing apparatus and a substrate processing method capable of reducing processing time while suppressing a decrease in processing yield.

  The substrate processing apparatus according to the embodiment includes a film forming unit that forms a first protective film having laser light absorption and etching resistance on a first surface of a substrate, and a first surface formed on the first surface. A film removing unit that irradiates the protective film with laser light and partially removes the first protective film on the first surface so as to form at least two adjacent linear substrate exposed portions on the first surface; Then, the substrate in which two linear substrate exposed portions are formed on the first surface by partial removal of the first protective film is treated with an etching solution, and at least two adjacent linear concave portions are processed in the first A laser beam is focused on a portion inside the substrate between the preliminary etching portion formed on the surface and the two linear concave portions on the first surface and located at a predetermined depth from the first surface. Irradiated to form an internally processed part that forms a cracked part or altered part inside the substrate, and a cracked part or deformed part. Part comprises a present etching unit for cutting and processing a substrate formed therein by an etching solution.

  The substrate processing apparatus according to the embodiment irradiates the first protective film formed on the first surface of the substrate with laser light absorption and etching resistance with laser light, and at least two adjacent linear films A film removing portion for partially removing the first protective film on the first surface so as to form a substrate exposed portion on the first surface, and two on the first surface by partial removal of the first protective film. The substrate on which the linear substrate exposed portion is formed is treated with an etching solution, and is at least a predetermined depth from the first surface between at least two adjacent linear recesses formed on the first surface. And an internal processing part for forming a crack part or an altered part inside the substrate.

  A substrate processing method according to an embodiment includes a step of forming a first protective film having laser light absorption and etching resistance on a first surface of a substrate, and a first protective film formed on the first surface Irradiating the first surface with a laser beam and partially removing the first protective film on the first surface so as to form at least two adjacent linear substrate exposed portions on the first surface; The substrate on which the two linear substrate exposed portions are formed on the first surface by partially removing the protective film is treated with an etching solution to form at least two adjacent linear concave portions on the first surface. The laser beam is condensed and irradiated to a portion of the substrate located between the step and two linear recesses on the first surface and located at a predetermined depth from the first surface. Forming a cracked part or a modified part in the substrate, and a substrate having the cracked part or a modified part formed therein And a step of cutting by treatment with an etchant.

  In the substrate processing method according to the embodiment, the first protective film having laser light absorption and etching resistance formed on the first surface of the substrate is irradiated with laser light, and at least two adjacent linear films are formed. A step of partially removing the first protective film on the first surface so as to form a substrate exposed portion on the first surface, and two linear shapes on the first surface by partial removal of the first protective film The substrate on which the exposed portion of the substrate is formed is treated with an etching solution and is located at a predetermined depth from the first surface between at least two adjacent linear recesses formed on the first surface. And a step of condensing and irradiating a laser beam on the inside of the substrate to form a cracked portion or an altered portion inside the substrate.

  According to the present invention, it is possible to shorten the processing time while suppressing a decrease in the processing yield.

1 is a block diagram illustrating a schematic configuration of a substrate processing apparatus according to an embodiment. It is a 1st process sectional view for explaining the flow of the substrate processing process concerning an embodiment. It is a 2nd process sectional view for explaining the flow of the substrate processing process concerning an embodiment. It is a 3rd process sectional view for explaining the flow of the substrate processing process concerning an embodiment. It is a 4th process sectional view for explaining the flow of the substrate processing process concerning an embodiment. It is a 5th process sectional view for explaining the flow of the substrate processing process concerning an embodiment. It is process sectional drawing for demonstrating a part of flow of the other board | substrate processing process which concerns on embodiment. It is process sectional drawing for demonstrating a part of flow of the other board | substrate processing process which concerns on embodiment.

  An embodiment will be described with reference to the drawings.

  As shown in FIG. 1, the substrate processing apparatus 1 according to the embodiment includes a film forming unit 2, a film removing unit 3, a preliminary etching unit 4, an internal processing unit 5, and a main etching unit 6. Transfer between these units 2 to 6 is performed by a transfer unit (not shown) such as robot handling or a belt conveyor. Hereafter, each part 2-6 is demonstrated, referring FIG. 2 thru | or FIG. 6 (it demonstrates using a glass substrate as an example of a process target object).

  As shown in FIG. 2, the film forming unit 2 forms a first protective film 12 having laser light absorption and etching resistance on the first surface M1 of the glass substrate 11, such as spin coating or ink jet coating. Further, a second protective film 13 having laser light absorption and etching resistance is formed on the second surface M2, which is the opposite surface of the first surface M1, by a method such as spin coating or inkjet coating. The film is formed by a forming method (film forming process). As described above, the glass substrate 11 has the first surface M1 and the second surface M2 facing each other. As the glass substrate 11, for example, a tempered glass substrate (as an example, a chemically tempered glass substrate) having a tempering layer (stress generation layer) on both sides can be used. In addition, as the first protective film 12 and the second protective film 13, for example, a resist material or the like can be used. Note that it is not necessary to use an expensive resist material, and a resist material in which a laser absorbent is contained in an etching-resistant protective paint may be used.

  As shown in FIG. 3, the film removing unit 3 uses the laser irradiation unit 3 a to irradiate the first protective film 12 formed on the first surface M <b> 1 of the glass substrate 11 with a laser beam, The first protective film 12 on the first surface M1 of 11 is partially removed into a desired shape (film removal step). At this time, the film removing unit 3 forms at least two adjacent linear substrate exposed portions M1a and M1b on the first surface M1 (that is, the substrate exposed portions M1a and M1b are the first ones). The first protective film 12 on the first surface M1 of the glass substrate 11 is partially removed (as occurs on the surface M1). In this step, the object to be removed is the first protective film 12, and the glass substrate 11 is not processed. For this reason, it is desirable to use a laser beam having a wavelength that is absorbed by the first protective film 12 and is not easily absorbed by the glass.

  By this film removal step, the first protective film 12 is laser-scribed in a shape having at least two scribe lines (two linear substrate exposed portions M1a and M1b) at desired positions. Each scribe line is formed along each other, and a protective film remains between the scribe lines. That is, two digging portions (grooves) 12a and 12b are formed in the first protective film 12 on the first surface M1 of the glass substrate 11, and thereby the two exposed first surfaces M1 are exposed. Substrate exposed portions M1a and M1b are formed. At this time, the residual protective film 12c exists between the two dug portions 12a and 12b. The scribe lines are preferably parallel to each other, but are not limited thereto. The width of one scribe line is thinner than 1 mm, for example, and the combined width of the two scribe lines and the remaining protective film portion is thinner than 10 mm, for example.

  The preliminary etching unit 4 supplies an etching solution (liquid for corroding glass) to the glass substrate 11 on which the first protective film 12 has been processed into a desired shape, and is on the first surface M1 of the glass substrate 11. Etching processing shallower than the substrate thickness of the glass substrate 11 is performed on each of the substrate exposed portions M1a and M1b, and two linear recesses 11a are formed on the first surface M1 of the glass substrate 11 as shown in FIG. And 11b are formed (preliminary etching step). Note that the etching solution may be supplied by immersing the glass substrate 11 in the etching solution or by applying the etching solution to the glass substrate 11, and using either processing such as batch processing or single wafer processing. good. When supplying the etching solution to the glass substrate 11, the etching solution is supplied while rotating the glass substrate 11, or the etching solution is supplied while the glass substrate 11 is conveyed by a roller. The method is not particularly limited.

  In this preliminary etching step, since the preliminary etching is isotropic etching, the etching proceeds so as to wrap around (or spread) under the first protective film 12 on the first surface M1 of the glass substrate 11, and each concave portion 11a and 11b are semicircular in cross section. At this time, the residual protective film 12c on the first surface M1 is also etched away. In this manner, two adjacent linear recesses 11a and 11b are formed at the planned cutting location on the first surface M1 of the glass substrate 11.

  Here, two adjacent scribe lines are close to each other, and the first protective film 12 having resistance to etching liquid does not have complete etching resistance. If the width is appropriately set, the residual protective film 12c is completely removed by the preliminary etching process described above. However, if the residual protective film 12c does not disappear, a removal step of irradiating the residual protective film 12c with laser light to perform laser scribing may be added, or laser irradiation in the next internal processing step Thus, the residual protective film 12c may be removed.

  As shown in FIG. 5, the internal processing portion 5 uses a laser irradiation portion 5a and a condensing lens 5b, and is formed between the two linear concave portions 11a and 11b and a predetermined depth from the first surface M1. A laser beam is condensed and irradiated to a portion inside the substrate located at a thickness (for example, several tens of μm) to form a crack portion A1 inside the glass substrate 11 (internal processing step). For this reason, it is desirable to use a laser beam having a wavelength that is easily absorbed by glass as the laser beam to be used. In addition to the crack portion A1, an altered portion that allows the etchant to penetrate or enter may be formed.

  Here, in the case where the crack portion A1 is generated only inside the glass substrate 11, when the thickness of the glass substrate 11 is reduced, it is necessary to focus the laser condensing portion on an extremely minute spot with a very narrow depth of focus. is there. That is, it is necessary that the condensing angle is a strong obtuse angle (large NA: needs to have a numerical aperture). However, when focusing on the inside of the glass substrate 11, if the condensing angle is an obtuse angle, the reflectance on the surface of the glass substrate 11 is increased, and the rate at which the laser light reaches the interior is reduced, and processing is impossible. Become. In other words, the generation of cracks in the optical axis direction with a narrow depth of focus inside the glass substrate 11 is theoretically limited (total reflection occurs when the incident angle exceeds the critical angle), and even if processing is possible, glass A considerable power loss occurs due to the surface reflection of the substrate 11, and the processing efficiency becomes extremely poor.

  However, as described above, when the laser beam is irradiated between the two parallel linear recesses 11a and 11b, the incident angle of the laser beam with respect to each recess 11a and 11b is relatively perpendicular. The power loss due to the surface reflection can be greatly reduced, which leads to a reduction in processing time. In addition, optically, the laser beam is selectively focused on a portion between the two linear concave portions 11a and 11b. As a result, the laser processing actively processes between the two linear concave portions 11a and 11b, and an internal crack (crack portion A1) is selectively and efficiently formed in this portion.

  It is also possible to immerse the glass substrate 11 in water and perform laser processing. This is because the laser beam is efficiently irradiated onto the glass substrate 11 because the power loss is less because the reflectance is lower in the water than in the air. As a result, the internal cracks can be deepened, so that the etchant actively infiltrates, the etching efficiency is improved, and the cutting time is shortened.

  The main etching unit 6 supplies an etching solution (a liquid for corroding glass) to the glass substrate 11 on which the two linear concave portions 11a and 11b are formed, and is on the first surface M1 of the glass substrate 11. Etching is performed on the two linear recesses 11a and 11b, and as shown in FIG. 6, the etching is further performed while forming one linear recess 11c on the first surface M1. The glass substrate 11 is cut (this etching process). Note that the etching solution may be supplied by immersing the glass substrate 11 in the etching solution or by applying the etching solution to the glass substrate 11, and using either processing such as batch processing or single wafer processing. good. When supplying the etching solution to the glass substrate 11, as in the case described above, the etching solution is supplied while rotating the glass substrate 11, or the etching solution is supplied while the glass substrate 11 is conveyed by rollers. However, the supply method is not particularly limited. After this etching process, the first protective film 12 and the second protective film 13 are removed from the glass substrate 11.

  In this main etching process, when the etching reaches the crack part A1 inside the glass substrate 11, the etching solution enters the crack part A1, and the etching rate of the crack part A1 becomes faster than other non-crack parts. . Further, the etching proceeds in the depth direction of the crack portion A1. Thus, with the progress of etching, the crack portion A1 inside the glass substrate 11 is selectively etched. In addition, since crack part A1 itself lose | disappears by an etching, quality does not fall by the residual crack part A1.

  According to such a substrate processing step, the etching time can be shortened by the crack portion A1 inside the glass substrate 11, and in addition, edge thinning that occurs when etching is performed without internal cracks is avoided. It becomes possible. This makes it possible to avoid chipping (small chipping) that tends to occur from the edge-thinned part during separation, reduction of substrate strength due to cracks, and shaping and polishing processes, etc., thus shortening processing time and improving product quality and yield. can do. Moreover, it becomes possible to carry out internal processing of the glass substrate 11 by realizing a light condensing state that is not normally possible, and at the same time, two linear shapes in which the direction and part where internal cracks are generated are formed by preliminary etching. It is possible to perform control that is limited to between the recesses 11a and 11b. Since the portion between the recesses 11a and 11b is a portion that is finally removed by etching, the quality and yield of the final product can be improved, and the etching time can be shortened and the process can be omitted.

  As described above, according to the embodiment, the glass substrate 11 on which the two linear substrate exposed portions M1a and M1b are formed by partial removal of the first protective film 12 is treated with the etching solution and adjacent to each other. At least two linear recesses 11a and 11b are formed on the first surface M1 of the glass substrate 11, and then between the two linear recesses 11a and 11b on the first surface M1. A laser beam is condensed and irradiated to a portion inside the substrate located at a predetermined depth from the surface M1 of 1 to form a crack portion (or altered portion) A1 inside the glass substrate 11. Thereby, since the direction and site | part which a crack generate | occur | produces inside the glass substrate 11 are limited between the two linear recessed parts 11a and 11b, damage (crack, crushing, etc.) of the glass substrate 11 during a process is prevented. can do. Further, when the etching reaches the crack portion A1 inside the glass substrate 11, the etching solution enters the crack portion A1, and the etching speed of the crack portion A1 becomes faster than other non-crack portions. Can be shortened. In this way, the etching time, that is, the processing time can be shortened while suppressing a decrease in the processing yield.

  In the above-described embodiment, two scribe lines (two linear substrate exposed portions M1a and M1b) are provided only on one side of the glass substrate 11, that is, the first protective film 12, in the film removal step. However, the present invention is not limited to this. For example, two scribe lines may be formed on both the first protective film 12 and the second protective film 13. In this case, in order to correct the stress imbalance of the tempered glass, it is desirable to process both surfaces in the same shape at the same time.

  Here, after the film removing process on both surfaces of the glass substrate 11, the same processing as described above is performed on both surfaces of the glass substrate 11, and as shown in FIG. 7, the first surface M1 of the glass substrate 11 and A concave portion 11c is formed in the second surface M2 by the main etching, and they are connected to cut the glass substrate 11. As described above, since the etching process is performed from both the front and back surfaces of the glass substrate 11, the cutting time for cutting the glass substrate 11 can be shortened. In addition, when the unevenness | corrugation of the outer peripheral side surface of the cut | disconnected glass substrate 11 becomes a problem, the cut surface which is the outer peripheral side surface of the cut | disconnected glass substrate 11 is further processed with an etching liquid, and as shown in FIG. The cut surface of is flattened. Thereby, the quality of the glass substrate 11 can be improved.

  Further, in the above-described embodiment, description has been made to form two parallel scribe lines, but is not limited to this, a plurality of scribe lines may be further formed depending on processing requirements, The number of scribe lines is not particularly limited. In addition, it is not necessary to use the same scribe lines and the same number in all parts. For example, the width of each scribe line may be selected as appropriate, and the interval between the scribe lines may be selected as appropriate.

  In the above-described embodiment, the glass substrate 11 is used as an object to be processed, which is a brittle material substrate. However, the present invention is not limited to this. For example, a silicon substrate or a ceramic substrate is used. In addition, the same processing as described above can be performed. The possibility of breakage when cutting a silicon substrate is smaller than that of a tempered glass substrate. However, recent silicon substrates and the like can be used to cut extremely thin substrates, and the above-described processing can be applied. Is possible.

  As mentioned above, although some embodiment of this invention was described, these embodiment is shown as an example and is not intending limiting the range of invention. These novel embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the scope of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are included in the invention described in the claims and the equivalents thereof.

DESCRIPTION OF SYMBOLS 1 Substrate processing apparatus 2 Film formation part 3 Film removal part 4 Preliminary etching part 5 Internal processing part 6 Main etching part 11 Glass substrate 11a Recess 11b Recess 12 First protective film 13 Second protective film A1 Crack part (or altered part) )
M1 First surface M1a Substrate exposed portion M1b Substrate exposed portion M2 Second surface

Claims (12)

A film forming portion for forming a first protective film having laser light absorption and etching resistance on the first surface of the substrate;
The first protective film formed on the first surface is irradiated with laser light, and at least two adjacent linear substrate exposed portions are formed on the first surface. A film removing portion for partially removing the first protective film;
The substrate on which the two linear substrate exposed portions are formed on the first surface by partial removal of the first protective film is treated with an etching solution, and at least two adjacent linear concave portions are formed. A pre-etched portion formed on the first surface;
A laser beam is condensed and irradiated on a portion of the substrate between the two linear recesses on the first surface and located at a predetermined depth from the first surface, An internally processed part that forms a cracked or altered part inside,
A main etching part that cuts the substrate in which the crack part or the altered part is formed with an etchant; and
A substrate processing apparatus comprising: In addition to forming the first protective film on the first surface, the film forming unit has laser light absorption and etching resistance on a second surface opposite to the first surface. Forming a second protective film;
In addition to partially removing the first protective film on the first surface, the film removing unit irradiates the second protective film formed on the second surface with a laser beam, Partially removing the second protective film on the second surface so as to form two linear substrate exposed portions on the second surface;
The preliminary etching portion is configured to expose the two linear substrates on both the first surface and the second surface by partially removing the first protective film and partially removing the second protective film. The substrate on which the portion is formed is treated with an etching solution, and at least two adjacent recesses are formed on the first surface and the second surface, respectively.
The internal processing portion condenses laser light at a location inside the substrate that is between the two linear concave portions on the first surface and is located at a predetermined depth from the first surface. In addition to irradiating, the laser beam is focused on a portion inside the substrate between the two linear concave portions on the second surface and located at a predetermined depth from the second surface. The substrate processing apparatus according to claim 1, wherein irradiation is performed to form a cracked portion or an altered portion in the substrate.   3. The substrate processing apparatus according to claim 1, wherein the preliminary etching unit removes a residual protective film existing between the two linear substrate exposed portions with the etching solution. 4. .   3. The substrate according to claim 1, wherein the internal processing portion removes a residual protective film existing between the two linear substrate exposed portions by irradiation with the laser beam. 4. Processing equipment.   5. The substrate processing apparatus according to claim 1, wherein the main etching unit further processes a cut surface, which is an outer peripheral side surface of the cut substrate, with an etching solution. 6. The first protective film having laser light absorption and etching resistance formed on the first surface of the substrate is irradiated with laser light, and at least two adjacent linear substrate exposed portions are exposed to the first surface. A film removing portion for partially removing the first protective film on the first surface to form
The substrate on which the two linear substrate exposed portions are formed on the first surface by partial removal of the first protective film is processed with an etching solution, and is adjacent to the first surface formed on the first surface. A laser beam is condensed and applied to a portion of the substrate located between the at least two linear recesses and located at a predetermined depth from the first surface, and a crack portion or an altered portion is formed inside the substrate. An internal processing part to form,
A substrate processing apparatus comprising: Forming a first protective film having laser light absorption and etching resistance on the first surface of the substrate;
The first protective film formed on the first surface is irradiated with laser light, and at least two adjacent linear substrate exposed portions are formed on the first surface. Partially removing the first protective film of
The substrate on which the two linear substrate exposed portions are formed on the first surface by partial removal of the first protective film is treated with an etching solution, and at least two adjacent linear concave portions are formed. Forming on the first surface;
A laser beam is condensed and irradiated on a portion of the substrate between the two linear recesses on the first surface and located at a predetermined depth from the first surface, A step of forming a crack portion or an altered portion inside,
A step of cutting the substrate in which the cracked portion or the altered portion is formed with an etching solution; and
A substrate processing method comprising: In the step of forming the first protective film, in addition to forming the first protective film on the first surface, the second surface, which is the opposite surface of the first surface, absorbs laser light. And forming a second protective film having etching resistance,
In the step of partially removing the first protective film on the first surface, in addition to partially removing the first protective film on the first surface, a second formed on the second surface. The protective film is irradiated with laser light, and the second protective film on the second surface is partially removed so as to form at least two adjacent linear substrate exposed portions on the second surface,
In the step of forming the two linear recesses on the first surface, the first surface and the second surface are removed by partially removing the first protective film and partially removing the second protective film. The substrate on which the two linear substrate exposed portions are formed on both surfaces is treated with an etching solution, and at least two adjacent recesses are formed on the first surface and the second surface, respectively. And
In the step of forming a crack portion or an altered portion inside the substrate, the substrate is located between the two linear recesses on the first surface and located at a predetermined depth from the first surface. In addition to condensing and irradiating a laser beam to an internal location, the substrate is located between the two linear recesses on the second surface and at a predetermined depth from the second surface. The substrate processing method according to claim 7, wherein a laser beam is condensed and irradiated on an internal portion to form a crack portion or an altered portion inside the substrate.   In the step of forming the two linear concave portions on the first surface, a residual protective film existing between the two linear substrate exposed portions is removed by the etching solution. The substrate processing method according to claim 7 or 8.   The step of forming a cracked portion or an altered portion inside the substrate is characterized in that a residual protective film existing between the two linear substrate exposed portions is removed by the laser light irradiation. The substrate processing method according to claim 7 or 8.   The substrate processing method according to claim 7, further comprising a step of treating a cut surface, which is an outer peripheral side surface of the cut substrate, with an etching solution. The first protective film having laser light absorption and etching resistance formed on the first surface of the substrate is irradiated with laser light, and at least two adjacent linear substrate exposed portions are exposed to the first surface. Partially removing the first protective film on the first surface so as to form:
The substrate on which the two linear substrate exposed portions are formed on the first surface by partial removal of the first protective film is processed with an etching solution, and is adjacent to the first surface formed on the first surface. A laser beam is condensed and applied to a portion of the substrate located between the at least two linear recesses and located at a predetermined depth from the first surface, and a crack portion or an altered portion is formed inside the substrate. Forming a step;
A substrate processing method comprising:

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