JP2014057939A - Frame generation suppressing device, coating device, and coating method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve film thickness uniformity of a coating film by suppressing simply and effectively a frame phenomenon (a coffee-stain phenomenon) of the coating film formed on a substrate.SOLUTION: Provided is a coating device installed in a clean room and operated under a downflow of clean air, the device comprising: a long type slit nozzle 10; a chemical liquid supply part 12; a scanner 14; a stage 16; a solvent atmosphere generation part 18; and a control part 20. The solvent atmosphere generation part 18 is configured to generate atmosphere of solvent vapor around a substrate G on the stage 16, the solvent atmosphere generation part 18 comprising: a solvent moisture absorption and release part 24 disposed around an area in which the substrate G is placed on the stage 16; and a solvent supply part 28 to supply solvent through a solvent supply line 26 to the solvent moisture absorption and release part 24.

Description

  The present invention relates to a coating apparatus and a coating method for forming a coating film on a substrate, and a frame generation suppressing apparatus that suppresses a frame phenomenon in which a peripheral portion of the coating film formed on a substrate rises during drying.

  In manufacturing processes for semiconductor devices, flat panel displays, solar cell panels, and the like, coating methods are used in various situations in which a single-sided film is formed on a substrate. In general, this type of coating method is classified into a spin method, a scan method, and a roll coating method.

  The spin method typically includes a spin stage, a dispenser type nozzle, a chemical supply source, a cup, and the like, and a certain amount of chemical is delivered from the nozzle to the center of the wafer placed on the spin stage in the cup. The wafer is dropped and the wafer is rotated at a high speed integrally with the spin stage to form a coating film of the chemical solution on the wafer. The scanning method typically includes a long slit nozzle, a chemical solution supply source, a scanning mechanism, and the like. While the chemical solution is discharged from the slit nozzle in a curtain shape, the scanning mechanism causes a gap between the slit nozzle and the substrate. By performing the relative scanning movement, a coating film of the chemical solution is formed on the substrate without blowing the chemical solution around. In the roll coating method, the substrate is moved while being in contact with the roll, the chemical solution is transferred from the roll to the substrate, and a coating film is formed on the substrate.

JP2007-208140 JP2011-23669

  However, even if any of the above-described spin method, scan method, and roll coating method is used, the chemical solution is deposited on the substrate with a film thickness of several tens μm to one hundred μm or more like an interlayer insulating film or a passivation film. In the film forming process in which the coating film after application and drying is a functional film, the film thickness of the coating film after drying, that is, the functional film is uniform even if the film thickness of the coating film is controlled to be flat at the time of application. In addition, the problem is that the peripheral edge (outer peripheral part) is thicker than the central part. This is because when the solvent of the chemical solution applied on the substrate evaporates, the peripheral portion having a larger surface area in contact with the outside air has a higher evaporation rate of the solvent than the central portion of the coating film. Because the flow of liquid from the center to the periphery occurs in the inside, the solute concentration at the periphery increases, and as a result (after drying), the amount of solids increases at the periphery than the center and becomes thicker. There is a so-called frame phenomenon (or coffee stain phenomenon or crown phenomenon). When such a frame phenomenon occurs, the peripheral portion of the coating film cannot be used as a functional film, so that the effective area of the coating film is narrowed, and consequently the product area on the substrate is narrowed.

  In order to compensate for the frame phenomenon as described above, it is possible to apply a chemical solution so that the peripheral edge portion is relatively thinner than the central portion on the substrate in anticipation of the frame phenomenon in advance, but this method is difficult to realize. There is no practicality. In addition, it may be possible to improve the physical properties (viscosity, surface tension, etc.) of the chemical so as to suppress the frame phenomenon, but this method places an excessive burden on the chemical (functional solution) away from its original function, After all it is difficult to realize.

  The present invention solves the problems of the prior art as described above, and can easily and efficiently suppress the occurrence of a frame at the peripheral edge of the coating film formed on the substrate during the drying process. Provided are a frame generation suppressing device, a coating device, and a coating method that improve film thickness uniformity.

  The frame generation suppression device of the present invention is a frame generation suppression device that performs a process for suppressing a frame phenomenon in which a peripheral portion of the coating film of a chemical solution formed on a substrate is raised during drying. A support part for supporting the substrate; and an outer periphery of the substrate supported by the support part. The atmosphere of solvent vapor is formed around the substrate when the coating film is dried on the substrate. And a solvent atmosphere generation part to be generated.

  The coating apparatus of the present invention includes a coating unit that coats a chemical solution on a substrate to form a coating film, a support unit that supports the substrate on which the coating film is formed, and a substrate that is supported by the support unit. And a solvent atmosphere generation unit that generates an atmosphere of solvent vapor around the substrate when the coating film is dried on the substrate.

  The coating method of the present invention includes a coating step of coating a chemical solution on a substrate to form a coating film, the substrate on which the coating film is formed supported by a support portion, and the substrate supported by the support portion. And a drying step of generating an atmosphere of solvent vapor around the substrate when the coating film is dried.

  In the present invention, when the solvent evaporates from each part of the coating film formed on the substrate by the coating process, the peripheral part of the coating film is exposed to the vapor of the solvent trapped in the periphery of the coating film. The rate of evaporation is locally suppressed. Thereby, the flow of the liquid from the central portion to the peripheral portion is suppressed in the coating film in the liquid phase state, and the frame phenomenon is thereby suppressed. As a result, in the coating film after drying, the peripheral edge portion does not rise, and the film thickness uniformity is improved.

  According to the frame generation suppressing device, the coating apparatus, or the coating method of the present invention, it is simple and easy to generate a frame in the drying process at the peripheral portion of the coating film formed on the substrate by the configuration and operation as described above. It can suppress efficiently and can improve the film thickness uniformity of a coating film.

It is a block diagram which shows the whole structure of the coating device in one Embodiment of this invention. It is a perspective view which shows the specific structural example of the scanning mechanism in the said coating device, and the condition at the time of a coating process. It is a figure which shows the structure of the solvent atmosphere production | generation part in one Example. It is a partial expanded sectional view for demonstrating the effect | action of a solvent atmosphere production | generation part. It is a partial expanded sectional view for demonstrating the effect of a solvent atmosphere production | generation part. It is a top view which shows the pattern of the coating film used for the experiment for demonstrating the phenomenon similar to the effect of this invention. It is a fragmentary sectional view which shows the film thickness profile of the outer periphery part vicinity of the dried coating film observed by the said experiment. It is a fragmentary sectional view which shows the film thickness profile near the inner periphery part of the dried coating film observed by the said experiment. It is a partial cross section side view which shows one structural example provided with the raising / lowering mechanism for changing the height position of a solvent absorption / desorption part in a solvent atmosphere production | generation part. It is a partial expanded sectional view which expands and shows the principal part of FIG. 6A. It is a partial expanded sectional view which shows one modification of the shape of a solvent absorption / desorption part. It is a partial expanded sectional view which shows another modification of the shape of a solvent absorption / desorption part. It is a top view which shows the example of 1 structure which divides | segments a solvent absorption / desorption part into a some area in the circumference direction. It is a top view which shows one structural example which uses a solvent supply nozzle in order to supply a solvent to a solvent absorption-and-release part in a solvent atmosphere production | generation part. It is a side view which shows the effect | action of the said solvent supply nozzle. It is a perspective view which shows the structure of the frame generation | occurrence | production suppression apparatus in one Embodiment. It is a perspective view which shows the effect | action (state which has mounted the semiconductor wafer) of the said frame generation | occurrence | production suppression apparatus. It is a perspective view which shows the structure of the frame generation | occurrence | production suppression apparatus in another embodiment. It is a perspective view which shows the effect | action (state which has mounted the semiconductor wafer) of the said frame generation | occurrence | production suppression apparatus. It is a perspective view which shows the structure of the principal part of the reduced pressure drying apparatus in one Embodiment. It is a perspective view which shows the structure of the conveying apparatus in one Embodiment.

  In FIG. 1, the whole structure of the coating device in one Embodiment of this invention is shown. This coating apparatus is configured as a coating apparatus that applies a chemical solution onto, for example, a rectangular substrate G by a scanning method to form a film on one side, that is, a coating film. The chemical solution used in this coating apparatus is not particularly limited, but is preferably a functional solution that requires a film thickness of several tens of μm to one hundred μm or more, such as a material solution for an interlayer insulating film, a material solution for a passivation film High viscosity resin-based solutions, adhesives and the like. The substrate G that can be subjected to the coating treatment by this coating apparatus is not particularly limited, and includes, for example, various substrates for FPD, various substrates for solar cell panels, a photomask, and a printed substrate.

  As shown in FIG. 1, the coating apparatus includes a long slit nozzle 10, a chemical solution supply unit 12, a scanning mechanism 14, a stage 16, a solvent atmosphere generation unit 18, and a control unit 20, and is installed in a clean room. And run under clean air downflow. The control unit 20 includes a CPU, a memory, and various interfaces, and controls the individual operations of each unit in the apparatus, particularly the chemical solution supply unit 12, the scanning mechanism 14, and the solvent atmosphere generation unit 18, and the operation (sequence) of the entire apparatus. Control.

  The slit nozzle 10 has a slit-like discharge port 10a, and discharges a chemical from the discharge port 10a in a curtain shape. The chemical liquid supply unit 12 supplies the chemical liquid to the slit nozzle 10 via the chemical liquid supply line 22. The scanning mechanism 14 causes relative movement for application scanning between the slit nozzle 10 and the substrate G or the stage 16. The solvent atmosphere generation unit 18 is configured to generate an atmosphere of solvent vapor around the substrate G on the stage 16, and is a solvent absorption and desorption unit provided around the area where the substrate G of the stage 16 is placed. 24, and a solvent supply unit 28 for supplying the solvent to the solvent absorption / desorption unit 24 via a solvent supply line 26.

  FIG. 2 shows a specific configuration example of the scanning mechanism 14 and a situation during the coating process. The scanning mechanism 14 has a gantry-type scanning unit 30 that moves the slit nozzle 10 above the stage 16 in a horizontal direction (X direction) perpendicular to the nozzle longitudinal direction (Y direction) for application scanning. The stage 16 is also provided with a lift pin mechanism (not shown) for loading / unloading the substrate G by moving a plurality of lift pins up and down.

  The scanning unit 30 includes a gate-shaped support body 32 that horizontally supports the slit nozzle 10 and a scanning drive unit 34 that linearly moves the support body 32 in both directions in the X direction. The scanning drive unit 34 may be constituted by, for example, a linear motor mechanism with a guide or a ball screw mechanism. The joint portion 36 connecting the support 32 and the slit nozzle 10 is provided with a lifting mechanism (not shown) with a guide for changing or adjusting the height position of the slit nozzle 10. By adjusting the height position of the slit nozzle 10, the distance interval or gap interval between the lower end surface of the slit nozzle 10 or the discharge port 10 a and the surface of the substrate G on the stage 16 can be arbitrarily set or adjusted. it can.

  During the coating process, coating scanning is performed under the control of the control unit 20 by cooperation between the chemical solution supply unit 12 and the scanning mechanism 14. That is, as shown in FIG. 2, on the stage 16 on which the substrate G is placed, the slit nozzle 10 discharges the chemical from the discharge port 10a in a curtain shape at a constant speed in the scanning direction (X direction). By moving, a chemical coating film RM is formed on one side so that a carpet is laid on the substrate G. At that time, evaporation of the solvent contained in the chemical solution, that is, drying of the coating film RM starts immediately after the chemical solution is applied onto the substrate G. In this coating apparatus, the solvent atmosphere generation unit 18 operates under the control of the control unit 20 before the start of the coating scan, after the start or immediately after the end, and the atmosphere of the solvent vapor is generated around the substrate G on the stage 16. It is to be generated.

In FIG. 3, the structure of the solvent atmosphere production | generation part 18 in one Example is shown. The solvent moisture absorption / release section 24 is made of any material (preferably a porous body) having moisture absorption and moisture release properties, and the stage 16 is formed so as to surround the substrate G by exposing all (or part) of the upper surface thereof. Is installed. The solvent supply unit 28 includes a pump 38 for feeding liquid, a regulator 40, an on-off valve 42, and a primary manifold (MH ₁ ) on a solvent supply line 26 that connects the solvent container 36 that stores the solvent and the solvent absorption / release unit 24. 44 and a secondary manifold (MH ₂ ) 46 are provided.

The solvent container 36 preferably stores the solvent in a sealed state, and fills the space above the liquid level with, for example, N ₂ gas. The pump 38 and the on-off valve 42 are activated and turned on, respectively, when the solvent is supplied from the solvent container 36 to the solvent absorption / desorption unit 24. The regulator 40 is used to control the supply flow rate or pressure of the solvent on the solvent supply line 26. The solvent pumped out of the solvent container 36 by the pump 38 is sent to the primary manifold (MH ₁ ) 44 through the regulator 40 and the ON / OFF valve 42 in the ON state. The primary manifold (MH ₁ ) 44 divides the solvent received from the pump 38 into a plurality of secondary manifolds (MH ₂ ) 46 that are aligned with the lower surface of the solvent absorption / release section 24 in a line in the circumferential direction. Distribute. Each of the secondary manifolds (MH ₂ ) 46 has a large number of solvent outlets (not shown) at regular intervals on the surface (upper surface) facing the solvent absorption / release section 24, and the primary manifold (MH ₁ ). The pressure of the solvent received from 44 is equalized in the circumferential direction, and the solvent is sent to the solvent absorption / desorption unit 24 from the many solvent outlets.

The solvent absorption and desorption unit 24 absorbs and temporarily holds the solvent sent from the secondary manifold (MH ₂ ) 46 and evaporates (volatilizes) the solvent from the exposed upper surface into the atmosphere. Thus, an atmosphere of solvent vapor is formed immediately above the solvent absorption / desorption unit 24, that is, around the substrate G.

  Therefore, as shown in FIG. 4A, when the solvent evaporates from each part of the coating film RM formed on the substrate G by the coating process, the periphery of the coating film RM is the periphery (the solvent absorption / desorption part 24 adjacent thereto). Exposed to the vapor of the solvent trapped immediately above and in the vicinity thereof, and the rate at which the solvent evaporates from the peripheral edge of the coating film RM is locally suppressed. This makes it difficult for the liquid to flow from the central portion to the peripheral portion in the coating film RM in the liquid phase state, and the solute concentration at the peripheral portion is higher than the central portion, and the solid content may be increased. It disappears or the degree is greatly reduced. That is, the frame (coffee stain) phenomenon of the coating film RM is suppressed. As a result, in the dried coating film RM, as shown in FIG. 4B, the peripheral portion does not rise and the film thickness uniformity is improved.

  Note that the step of drying the coating film RM using the solvent atmosphere generation unit 18 as described above is sufficient up to a stage where a certain ratio (for example, 15% to 30%) of the solvent contained in the coating chemical solution is evaporated. is there. Usually, after the frame generation suppressing process as described above, the pre-baking process is performed on the substrate G at a heating temperature of 100 ° C. to 180 ° C. in a pre-baking apparatus (not shown), and the solvent remaining in the coating film RM is removed. Most are removed. Finally, the substrate G is heated to a high temperature (for example, 300 ° C. to 400 ° C.) in the heating furnace of the baking apparatus, whereby the coating film RM is baked and finished into a functional film.

  At that time, the coating film RM on the substrate G carried into the pre-baking apparatus is in a dry or semi-dry state in the vicinity of the peripheral edge by the frame generation suppression process in the previous process. Thus, the liquid does not flow from the central portion to the peripheral portion, so that the frame phenomenon does not occur and the flatness of the coating film RM is maintained. Similarly, when the coating film RM on the substrate G is baked by the baking apparatus, the frame phenomenon does not occur, and the flatness of the coating film RM or the functional film is maintained.

By the way, a phenomenon similar to the above-described operation and effect of the present invention can be confirmed by simple experiments even around us. For example, as shown in FIG. 5A, the solution is dropped on a flat plate or table, and both of the “C” -shaped coating film RM ₂ are placed in about half of the “●” -shaped coating film RM _1. The coating films RM ₁ and RM ₂ are formed almost simultaneously and left in the atmosphere as they are to be naturally dried. Then, as shown in FIG. 5B (a cross-sectional view taken along the line I-I in FIG. 5A), the frame phenomenon is clearly manifested in the outer peripheral edge a that is not adjacent to the coating film RM ₂ of the coating film RM _1. Thickness rises greatly. On the other hand, as shown in FIG. 5C (II-II line sectional view of FIG. 5A), the inner side of the peripheral portion b of adjacent coating film RM ₁ and the coating film RM _2, in c, weak degree of expression of frame phenomenon The film thickness is small. In addition, in the outer peripheral edge portion d of the coating film RM ₂ that is not adjacent to the coating film RM ₁ , the frame phenomenon is clearly manifested and the film thickness is greatly increased.

In this embodiment, the peripheral edge of the coating film RM is affected in the same way as the inner peripheral edge b of the coating film RM ₁ is affected by the solvent vapor entering from the inner peripheral edge c of the coating film RM ₂ adjacent thereto. The influence of the solvent vapor entering the part from the solvent absorption and desorption part 24 adjacent to the part is suppressed, and the expression of the frame phenomenon is suppressed. Moreover, in the solvent atmosphere generation unit 18 of this embodiment, the rate of solvent vapor generation in the solvent absorption / release unit 24 can be arbitrarily controlled by adjusting the flow rate of the solvent supplied to the solvent absorption / release unit 24. The effect of the solvent absorption / release unit 24 on the peripheral edge of the coating film RM, that is, the effect of suppressing evaporation can be arbitrarily increased. Thereby, the expression of the frame phenomenon can be effectively and completely suppressed.

As a preferred modification of the solvent atmosphere generation unit 18, as shown in FIG. 6A, the height position of the solvent absorption / desorption unit 24 can be switched or adjusted on the stage 16. In the illustrated configuration example, for example, the elevating drive shaft 52 of the elevating drive unit 50 having a cylinder or the like is hollowed and physically coupled to the solvent absorption / desorption unit 24 or the secondary manifold (MH ₂ ) 46, and the primary A solvent supply line 26 connecting the manifold (MH ₁ ) 44 and the secondary manifold (MH ₂ ) 46 is passed through the elevating drive shaft 52. By providing such an elevating mechanism, it is possible to align the upper surface of the solvent moisture absorbing / releasing portion 24 with the upper surface of the coating film RM on the substrate G as shown in an enlarged view in FIG. It is also possible to make the upper surface of the wet part 24 arbitrarily higher (or arbitrarily lower) than the upper surface of the coating film RM on the substrate G. Further, as the film thickness of the coating film RM gradually decreases as the drying progresses, the height position of the solvent moisture absorption / release section 24 can be gradually lowered.

The shape of the solvent absorption and desorption part 24, particularly the shape of the upper surface thereof, is not limited to a flat surface. For example, it is designed to have an inclined surface as shown in FIGS. 7A and 7B or a curved shape (for example, a convex surface shape) although not shown. You can also In this embodiment, the secondary manifold (MH ₂ ) 46 connected to the lower surface of the solvent absorption / desorption unit 24 forms a side wall with respect to the coating film RM on the substrate G. Since such a side wall exists around the substrate G, a downflow airflow does not enter the gap between the coating film RM or the end of the substrate G and the solvent absorption / release unit 24. As a result, the effect that the peripheral portion of the coating film RM is connected to the solvent absorption / desorption portion 24 in terms of atmosphere, that is, the effect of incorporating the solvent into the central portion rather than the peripheral portion with respect to the evaporation of the solvent is reliably and reliably ensured.

In addition, as shown in FIG. 8, the solvent absorption and desorption part 24 is divided into a plurality of sections 24A, (24B _L , 24B _R ), (24C _L , 24C _R ),... (24E _L , 24E _R ) , 24F, the supply of the solvent to each section can be controlled independently. In this case, a plurality of sections 46A, (46B _L , 46B _R ), (46C _L , 46C _R ) in the circumferential direction also in the secondary manifold (MH ₂ ) 46 corresponding to the division of the solvent absorption / release section 24. ,... (46E _L , 46E _R ), 46 F, and an opening / closing valve 54 is preferably provided in each branch pipe connecting the primary manifold (MH ₁ ) 44 and the secondary manifold (MH ₂ ) 46. Thus, according to the structure which divides the solvent moisture absorption / release part 24 into a plurality of sections, for example, each section in order from the upstream side of the coating scan according to the progress of the coating film RM formed on the substrate G during the coating process. It is possible to start generating a solvent evaporation atmosphere in For example, this method can be suitably used when the volatility of the solvent used in the chemical solution is very high.

  For example, when a chemical solution is applied to a rectangular region on the substrate, the solvent volatilization rate may be different at the corners of the applied region as compared to other peripheral portions of the application region. In that case, it is also possible to vary the amount of solvent supplied between the corner portion and the other peripheral portion according to the difference in volatilization rate.

In the solvent supply unit 28 of the solvent absorption / desorption unit 24 described above, the solvent pumped up from the solvent container 36 by the pump 38 is supplied to the primary manifold (MH ₁ ) 44 and the secondary manifold (MH ₂ ) 46 provided around the stage 16. The solvent is supplied to the solvent absorption and desorption unit 24 of the stage 16 via the above. As another example of the solvent supply unit 28, as shown in FIGS. 9A and 9B, one or more of the solvents pumped from the solvent container 36 by the pump 38 are attached to the movable support 32 (FIG. 2) of the scanning mechanism 14. It is also possible to supply the solvent to the moisture absorbing / releasing portion 24 from above via the solvent supply nozzles 56 and 58.

  In the configuration example of FIGS. 9A and 9B, the first solvent supply nozzle 56 is formed of, for example, a long type or pipe type nozzle and is provided next to the slit nozzle 10 in the scanning direction to start the application scanning. Immediately before and immediately after the end, the solvent is discharged (supplied) toward the front end section 24F and the rear end section 24B of the solvent absorption / desorption section 24 in a band shape. On the other hand, the second solvent supply nozzle 58 is composed of, for example, a gun-type nozzle, and is provided on both the left and right sides of the slit nozzle 10 to thread the solvent toward the left and right side sections 24L and 24R of the solvent absorption and desorption part 24 during application scanning. Discharged (supplied).

  The solvent supply unit 28 is provided with on-off valves 42A and 42B in the middle of solvent supply lines 26A and 26B from the pump 38 or the regulator 40 to the nozzles 56 and 58, respectively. When supplying the solvent from the nozzle 56 to the front end section 24F or the rear end section 24B of the solvent absorption / release section 24, the on-off valve 42A is turned on, and from the nozzle 58 to the left and right sections 24L, 24R of the solvent absorption / release section 24. When supplying the solvent, the on-off valve 42B is turned on.

In this configuration example, it is not necessary to attach the primary manifold (MH ₁ ) 44 and the secondary manifold (MH ₂ ) 46 around the stage 16. Further, the generation of the solvent evaporation atmosphere in each section can be started in order from the upstream side of the coating scan in accordance with the progress of the coating film RM formed on the substrate G during the coating process.

[Other Embodiments or Modifications]

  In the above-described embodiment, the solvent atmosphere generation unit 18 is mounted on the coating apparatus together with the coating processing unit (slit nozzle 10, chemical solution supply unit 12, scanning mechanism 14, etc.). However, a unit specialized in the function of suppressing the generation of a frame by mounting the solvent atmosphere generation unit 18 without including the coating processing unit, that is, a frame generation suppression device is also possible as one aspect of the present invention.

  FIG. 10A and FIG. 10B show a configuration of a main part of the frame generation suppressing device in one embodiment. This frame generation suppressing device uses a drum-shaped stage 60, and the solvent absorption and desorption part 24 is provided in an annular shape around a region where a circular substrate such as a semiconductor wafer W is placed on the upper surface of the stage 60. The solvent absorption / release unit 24 is connected to a solvent supply unit 28 via a solvent supply line 26. A plurality of holes 62 in which lift pins (not shown) of the lift pin mechanism protrude and appear are formed on the upper surface of the stage 60 (FIG. 10A).

  When a chemical solution is applied to one surface of the semiconductor wafer W near the coating film flattening device, for example, by a spin coating device (not shown), the stage 60 is immediately moved by an external transfer robot (not shown) and a lift pin mechanism. (FIG. 10B). And the solvent atmosphere production | generation part 18 act | operates under control of the control part 20 similarly to the said embodiment. Thereby, when the solvent evaporates from each part of the coating film RM on the semiconductor wafer W, the peripheral part of the coating film RM is exposed to the vapor of the solvent trapped immediately above and in the vicinity of the solvent absorption and desorption part 24 adjacent thereto, As a result, evaporation of the solvent at the peripheral edge of the coating film RM is locally suppressed, and as a result, the frame phenomenon of the coating film RM is suppressed. As a result, in the coating film RM on the dried semiconductor wafer W, the peripheral portion does not rise and the film thickness uniformity is improved.

  FIG. 11A and FIG. 11B show a configuration of a main part of a frame generation suppressing device according to another embodiment. This frame generation suppressing device has a gun-type nozzle 66 that can be moved in a two-dimensional direction (X direction / Y direction) on a stage 60 by an XY scanning mechanism 64, and is pumped from a solvent container 36 (FIG. 3) by a pump 38. The solvent is supplied to the solvent absorption / desorption unit 24 on the stage from above via the nozzle 66.

  In the XY scanning mechanism 64, a pair of X guide rails 68, 68 extending in the X direction are disposed on the left and right sides of the stage 60, and one X guide rail 70 extending in the Y direction across the upper side of the stage 60 is, for example, A Y-direction drive unit 72 having an electric motor can move in the X direction on the X guide rails 68 and 68. Further, a carriage (conveyance body) 74 that can move in the Y direction by, for example, a self-propelled type or an external drive type is mounted on the Y guide rail 70, and a gun-type nozzle 66 is attached to the carriage 74. By combining the movement in the X direction by the X direction drive unit 72 and the movement in the Y direction by the carriage 74, the gun-type nozzle 66 is moved between any two points on the XY plane above the stage 60, or in any straight or curved route. It can be moved with.

  In this frame generation suppressing device, as shown in FIG. 11A, immediately before the coated semiconductor wafer W is loaded onto the stage 60, the XY scanning mechanism 64 and the solvent supply unit 28 operate in cooperation, and the nozzle 66 is moved. While the solvent is being discharged toward the solvent absorption / release section 24 directly below, it goes around the solvent absorption / release section 24. The solvent absorption and desorption unit 24 absorbs and temporarily holds the solvent supplied from the nozzle 66, and evaporates (volatilizes) the solvent from the exposed upper surface into the atmosphere. Thus, an atmosphere of solvent vapor is formed immediately above the solvent absorption / desorption unit 24, that is, around the substrate G.

  Then, as shown in FIG. 11B, when the semiconductor wafer W immediately after receiving the coating process is loaded onto the stage 60, the solvent evaporates from each part of the coating film RM on the semiconductor wafer W, while the coating film RM The peripheral portion is exposed to the solvent vapor that can enter immediately above the solvent absorption / desorption portion 24 adjacent thereto, thereby locally suppressing the evaporation of the solvent from the peripheral portion of the coating film RM, and consequently the frame phenomenon of the coating film RM. Is suppressed. As a result, in the coating film RM on the dried semiconductor wafer W, the peripheral portion does not rise and the film thickness uniformity is improved.

  According to the present invention, any processing apparatus that performs a predetermined process on the substrate or the substrate is transported immediately after the coating film is formed on the substrate and until the coating film is half-dried or mostly dried. The solvent atmosphere generation unit 18 as described above can be incorporated in an arbitrary transfer device.

  For example, as shown in FIG. 12, a solvent atmosphere generation unit 18 can be incorporated in a reduced pressure drying apparatus for drying a coating film on a substrate under reduced pressure immediately after the coating process. This vacuum drying apparatus includes a tray or shallow container type lower chamber 80 having an open upper surface, and a lid-like upper chamber (not shown) configured to be tightly fitted or fitted to the upper surface of the lower chamber 80. Z). The lower chamber 80 is formed in, for example, a quadrangle, a stage 82 for horizontally placing and supporting the substrate G is disposed at the center, and exhaust ports 84 are provided at the four corners of the bottom surface. Each exhaust port 84 communicates with a vacuum pump (not shown) through an exhaust pipe 86. With the lower chamber 80 covered with the upper chamber, the sealed processing space in both chambers can be depressurized to a predetermined degree of vacuum by the vacuum pump.

  This vacuum drying apparatus is provided with a quadrilateral solvent absorption / desorption unit 24 around a region of a stage 82 on which a rectangular substrate (not shown) is placed. The solvent absorption / release unit 24 is connected to a solvent supply unit 28 (not shown in FIG. 12) via a solvent supply line 26.

  In this vacuum drying apparatus, when the substrate G immediately after being subjected to a coating process by a coating apparatus (not shown) is loaded onto the stage 82, the upper chamber is covered with the lower chamber 80 in an airtight manner, and the interior of the room is covered by a vacuum pump. The pressure is reduced to a predetermined degree of vacuum. And the solvent atmosphere production | generation part 18 also act | operates during the drying process under this reduced pressure. As a result, when the solvent evaporates from each part of the coating film RM on the substrate G in the reduced pressure space, the peripheral edge of the coating film RM becomes a vapor of the solvent that can enter immediately above and in the vicinity of the solvent absorption and desorption part 24 adjacent thereto. As a result, the evaporation of the solvent from the peripheral edge of the coating film RM is locally suppressed, and as a result, the frame phenomenon of the coating film RM is suppressed. As a result, in the coating film RM on the substrate G after completion of the vacuum drying, the peripheral portion does not rise and the film thickness uniformity is improved.

  Moreover, as shown in FIG. 13, it is also possible to incorporate the solvent atmosphere production | generation part 18 in a conveying apparatus. In this transport apparatus, the solvent atmosphere generation unit 18 is mounted on a pallet 92 that places the substrate G immediately after the coating process and moves on the roller transport path 90. That is, the solvent absorption and desorption part 24 is provided around the area where the substrate G of the pallet 90 is placed. A vacuum groove (not shown) for attracting and fixing the substrate G is formed on the substrate mounting surface of the pallet 90.

  In this transport apparatus, an XY scanning mechanism 64 and a gun type nozzle 66 as shown in FIG. 11A can be suitably used to supply the solvent to the solvent absorption / desorption unit 24. Therefore, also in this transport apparatus, when the solvent evaporates from each part of the coating film RM on the substrate G while the pallet 92 moves on the roller transport path 90, the peripheral edge of the coating film RM adjoins the solvent absorption. It is exposed to the vapor of the solvent trapped immediately above the moisture release portion 24, and thereby, the evaporation of the solvent is locally suppressed from the peripheral portion of the coating film RM, and consequently the frame phenomenon of the coating film RM is suppressed.

DESCRIPTION OF SYMBOLS 10 Slit nozzle 12 Chemical solution supply part 14,64 Scan mechanism 16,60 Stage 18 Solvent atmosphere production | generation part 20 Control part 24 Solvent absorption-and-release part
26 Solvent Supply Line 28 Solvent Supply Unit 38 Pump 44 Primary Manifold 46 Secondary Manifold 50 Lifting Drive Unit 56, 58 Solvent Supply Nozzle

Claims (16)

A frame generation suppressing device that performs a process for suppressing a frame phenomenon in which a peripheral portion of the coating film of a chemical solution formed on a substrate is raised in the process of drying,
A support for supporting the substrate;
A frame having a solvent atmosphere generating section that is provided so as to surround an outer periphery of the substrate supported by the support section and generates an atmosphere of a solvent vapor around the substrate when the coating film is dried on the substrate. Occurrence suppression device.   The solvent atmosphere generation unit is configured to temporarily hold and evaporate the solvent in a state where a part or all of the upper surface is exposed, and a solvent supply for supplying the solvent to the solvent absorption / desorption unit. The frame generation | occurrence | production suppression apparatus of Claim 1 which has a part.   The solvent supply unit includes a solvent container for storing a solvent, a solvent supply line connecting the solvent container and the solvent absorption / desorption unit, and a pump for extracting the solvent from the solvent container and sending it to the solvent absorption / desorption unit. The frame generation | occurrence | production suppression apparatus of Claim 2 which has a pump provided in the said solvent supply line.   4. The frame generation suppressing device according to claim 3, wherein the solvent supply unit has a manifold for evenly distributing the solvent supplied from the solvent supply line to the solvent absorption and desorption unit in a circumferential direction.   5. The solvent absorption and desorption part is divided into a plurality of sections in the circumferential direction, and the solvent is supplied from the solvent supply part independently for each section. Frame generation suppression device.   The solvent supply unit includes a nozzle for discharging the solvent from above and supplying the solvent to the solvent absorption and desorption unit, a solvent container for storing the solvent, a solvent supply line connecting the solvent container and the nozzle, 3. A pump provided in the solvent supply line for pumping a solvent from a solvent container and sending the solvent to the nozzle, and a scanning mechanism for moving the nozzle above the solvent absorption and desorption section. Frame generation suppression device.   The frame generation suppressing device according to any one of claims 2 to 6, wherein the solvent absorption and desorption part has a porous body.   The frame generation suppressing device according to any one of claims 2 to 7, wherein the solvent atmosphere generation unit includes an elevating mechanism for switching or adjusting a height position of the solvent absorption and desorption unit. The support part has a stage having a larger area than the substrate,
The frame generation suppressing device according to any one of claims 2 to 8, wherein the solvent absorption / desorption unit is provided around a region of the stage on which the substrate is placed.   The said solvent atmosphere production | generation part has a wall part which prevents that an airflow flows into the clearance gap between the said board | substrate and the said solvent absorption-and-release part on the said stage, As described in any one of Claims 2-9. Frame generation suppression device. An application part for applying a chemical solution on the substrate to form a coating film;
A support portion for supporting the substrate on which the coating film is formed;
A solvent atmosphere generation unit that is provided so as to surround an outer periphery of the substrate supported by the support unit, and generates a solvent vapor atmosphere around the substrate when the coating film is dried on the substrate; apparatus. An application process of applying a chemical solution on the substrate to form a coating film;
A drying step of supporting the substrate on which the coating film is formed by a support unit, and generating an atmosphere of solvent vapor around the substrate when the coating film is dried on the substrate supported by the support unit. And a coating method comprising:   The coating method according to claim 12, wherein the drying step is performed while the substrate is stationary in the atmosphere.   The said drying process is a coating method of Claim 12 performed while moving the said board | substrate in air | atmosphere.   The coating method according to claim 13 or 14, wherein the drying step is performed under a down flow of clean air.   The coating method according to claim 12, wherein the drying step is performed in a reduced pressure space.

Images