JP2014049405A - Display device and method for manufacturing the same, and electronic apparatus - Google Patents

Abstract

A display device, a method for manufacturing the display device, and an electronic device that can prevent the occurrence of leakage current more reliably.
A display device comprising: a plurality of first electrodes; a carrier capturing portion provided in a region between the electrodes; and a functional layer that covers the first electrode and the carrier capturing portion and has a carrier passing function.
[Selection] Figure 1

Description

  The present technology relates to a display device having a layer (for example, a hole injection layer) through which carriers such as holes pass, a manufacturing method thereof, and an electronic device.

  In recent years, a display using an organic EL (Electroluminescence) element has attracted attention as one of flat panel displays. Since this display is a self-luminous type, it has a wide viewing angle and low power consumption. Further, the organic EL element has sufficient response to a high-definition high-speed video signal.

  The organic EL element has, for example, a first electrode, an organic layer including a hole injection layer and a light emitting layer, and a second electrode in order. For example, such an organic EL element and a transistor constitute a display device. . An insulating film (partition wall) is provided in a region (interelectrode region) between adjacent first electrodes. There are mainly two methods for forming the organic layer. For example, a method for separately forming light emitting layers of red, green and blue for each element by vacuum deposition using a mask made of a thin film metal, and a mask There is a method in which light emitting layers of red, green and blue colors common to the elements are stacked and formed without using them. In addition, it is possible to form red, green, and blue light-emitting layers for each element by an inkjet method, a laser transfer method, etc., but it is common to the elements to improve high resolution and aperture ratio. Thus, the method of forming the organic layer is advantageous.

  However, in this method, a drive current leak easily occurs between adjacent elements via an organic layer (in particular, a hole injection layer or a hole transport layer). A normal organic EL element emits light according to the amount of current controlled by the transistor, but other elements emit light due to leakage current, which may cause deterioration in display image quality such as color mixing.

  On the other hand, Patent Document 1 proposes a method in which the insulating film in the interelectrode region is formed in a reverse taper shape, and the hole injection layer is thinned or disconnected between the elements. On the other hand, Patent Document 2 describes a method in which a part of the hole injection layer between elements is altered by irradiating the hole injection layer with ultraviolet rays locally.

JP 2009-4347 A JP 2008-1112747 A

  However, since either of the methods of Patent Documents 1 and 2 cannot sufficiently increase the resistance of the hole injection layer between elements, it has been desired to develop a method for preventing leakage current more reliably.

  The present technology has been made in view of such problems, and an object of the present technology is to provide a display device, a manufacturing method thereof, and an electronic apparatus that can more reliably prevent the occurrence of leakage current.

  A display device according to the present technology includes a plurality of first electrodes, a carrier capturing unit provided in an inter-electrode region, and a functional layer that covers the first electrode and the carrier capturing unit and has a carrier passing function. .

  A display device manufacturing method according to an embodiment of the present technology is a method for manufacturing the above display device, and includes a step of forming a plurality of first electrodes, a step of forming a carrier capturing portion in an inter-electrode region, and a carrier passing function. And a step of forming a functional layer having the first electrode and the carrier capturing portion so as to cover the first electrode and the carrier capturing portion.

  The display device of the present technology emits light by recombination of one carrier and the other carrier in the stacking direction of the first electrode and the functional layer in each element. In this display device, carriers moving between the elements are captured via the functional layer by the carrier capturing portion provided in the inter-electrode region. For example, holes that move between the elements via the hole injection layer are taken into the carrier trap and disappear.

  An electronic apparatus according to the present technology includes the display device.

  According to the display device of the present technology, the manufacturing method thereof, and the electronic apparatus, since the carrier capturing portion is provided in the inter-electrode region, it is possible to suppress the movement of carriers between the elements via the functional layer. Therefore, generation of leakage current can be prevented more reliably.

It is a sectional view showing the composition of the display concerning a 1st embodiment of this art. It is a figure showing the whole structure of the display apparatus shown in FIG. FIG. 3 is a diagram illustrating an example of a pixel drive circuit illustrated in FIG. 2. It is sectional drawing showing the manufacturing process of the display apparatus shown in FIG. It is sectional drawing showing the process of following FIG. 4A. FIG. 4B is a cross-sectional diagram illustrating a process following the process in FIG. 4B. FIG. 4D is a cross-sectional diagram illustrating a process following the process in FIG. 4C. It is sectional drawing showing the process of following FIG. 5A. 12 is a cross-sectional view illustrating a manufacturing process of a display device according to Comparative Example 1. FIG. 11 is a cross-sectional view illustrating a configuration of a display device according to Modification 1. FIG. It is sectional drawing showing an example of the manufacturing process of the display apparatus shown in FIG. It is sectional drawing showing the process of following FIG. 8A. It is sectional drawing showing the process of following FIG. 8B. 12 is a cross-sectional view illustrating a manufacturing process of a display device according to Comparative Example 2. FIG. FIG. 10 is a cross-sectional view illustrating another example of a manufacturing process for the display device illustrated in FIG. 7. It is sectional drawing showing the process of following FIG. 10A. FIG. 10B is a cross-sectional diagram illustrating a process following the process in FIG. 10B. 11 is a cross-sectional view illustrating a configuration of a display device according to Modification 2. FIG. FIG. 12 is a cross-sectional view illustrating a manufacturing process of the display device illustrated in FIG. 11. It is sectional drawing showing the process of following FIG. 12A. It is sectional drawing showing the process of following FIG. 12B. It is sectional drawing showing the structure of the display apparatus which concerns on the 2nd Embodiment of this technique. FIG. 14 is a cross-sectional view illustrating another example of the display device illustrated in FIG. 13. FIG. 14 is a cross-sectional view illustrating an example of a manufacturing process for the display device illustrated in FIG. 13. It is sectional drawing showing the process of following FIG. 15A. It is sectional drawing showing the process of following FIG. 15B. FIG. 14 is a cross-sectional view illustrating another example of a manufacturing process for the display device illustrated in FIG. 13. It is sectional drawing showing the process of following FIG. 16A. FIG. 16D is a cross-sectional diagram illustrating a process following the process in FIG. 16B. It is sectional drawing showing the structure of the display apparatus which concerns on the 3rd Embodiment of this technique. FIG. 18 is a cross-sectional view illustrating a manufacturing process for the display device illustrated in FIG. 17. It is sectional drawing showing the process of following FIG. 18A. FIG. 18B is a cross-sectional diagram illustrating a process following the process in FIG. 18B. FIG. 18D is a cross-sectional view illustrating an example of a manufacturing process for the display device illustrated in FIG. 18C. It is sectional drawing showing the process of following FIG. 19A. It is sectional drawing showing the structure of the display apparatus which concerns on 4th Embodiment of this technique. It is sectional drawing showing the structure of the display apparatus which concerns on the 5th Embodiment of this technique. It is a top view showing schematic structure of the module containing the display apparatus shown in FIG. 14 is a perspective view illustrating an appearance of application example 1. FIG. 10 is a perspective view illustrating an appearance of Application Example 2 viewed from the front side. FIG. 12 is a perspective view illustrating an appearance of Application Example 2 viewed from the back side. FIG. 12 is a perspective view illustrating an appearance of application example 3. FIG. 14 is a perspective view illustrating an appearance of application example 4. FIG. It is a figure showing the closed state of the example 5 of application. It is a figure showing the open state of the example 5 of application.

Hereinafter, embodiments of the present technology will be described in detail with reference to the drawings. The description will be given in the following order.
1. First Embodiment (Example in which hole trapping portion is configured by entire insulating film in interelectrode region: display device having organic layer common to elements)
2. Modification 1 (example in which the hole trapping portion is configured by a part (upper surface side) of the insulating film)
3. Modification 2 (example in which the hole trapping part is configured by part of the insulating film (side surface side))
4). Second embodiment (example having a film-like hole trapping portion on the surface of an insulating film)
5. Third embodiment (example in which part of hole injection layer has irradiated portion)
6). Carrying the fourth embodiment (example in which a hole-injecting part is included in a part of the hole-injecting layer and a hole-capturing part is configured in part of the insulating film)
7). Fifth embodiment (display device having an organic layer for each element)

<First Embodiment>
[Overall configuration of display device]
FIG. 1 illustrates a cross-sectional configuration of a main part of a display device (display device 1) according to a first embodiment of the present technology. The display device 1 is a self-luminous display device including a plurality of organic EL elements 10. On the support substrate 11, a pixel drive circuit forming layer L 1, a light emitting element forming layer L 2 including the organic EL elements 10, and The counter substrate 21 is provided in this order. The display device 1 is a so-called top emission type display device having a light extraction direction on the counter substrate 21 side. The pixel drive circuit formation layer L1 includes, for example, a signal line drive circuit for image display and a scan line drive circuit (see FIG. Not shown). Details of each component will be described later.

  FIG. 2 shows the overall configuration of the display device 1. The display device 1 has a display region 110 on a support substrate 11 and is used as an ultra-thin organic light emitting color display device or the like. Around the display area 110 on the support substrate 11, for example, a signal line driving circuit 120, a scanning line driving circuit 130, and a power supply line driving circuit 140 which are drivers for displaying images are provided.

  In the display area 110, a plurality of organic EL elements 10 (10R, 10G, 10B) arranged two-dimensionally in a matrix and a pixel drive circuit 150 for driving them are formed. The organic EL elements 10R, 10G, and 10B mean the organic EL elements 10 that emit red, green, and blue, respectively. In the pixel driving circuit 150, a plurality of signal lines 120A (120A1, 120A2,..., 120Am,...) And a plurality of power supply lines 140A (140A1,..., 140An,. .., And a plurality of scanning lines 130A (130A1,..., 130An,...) Are arranged in the row direction (X direction). Any one of the organic EL elements 10R, 10G, and 10B is provided at each intersection of the signal line 120A and the scanning line 130A. Each signal line 120A is connected to the signal line driving circuit 120, each scanning line 130A is connected to the scanning line driving circuit 130, and each power supply line 140A is connected to the power supply line driving circuit 140.

  The signal line driving circuit 120 supplies a signal voltage of a video signal corresponding to luminance information supplied from a signal supply source (not shown) to the selected organic EL elements 10R, 10G, and 10B via the signal line 120A. To do.

  The scanning line driving circuit 130 includes a shift register that sequentially shifts (transfers) the start pulse in synchronization with the input clock pulse. The scanning line driving circuit 130 scans them in units of rows when writing video signals to the organic EL elements 10R, 10G, and 10B, and sequentially supplies the scanning signals to the scanning lines 130A.

  The power supply line driving circuit 140 includes a shift register that sequentially shifts (transfers) a start pulse in synchronization with an input clock pulse. The power supply line driving circuit 140 appropriately supplies one of the first potential and the second potential different from each other to each power supply line 140 </ b> A in synchronization with scanning in units of columns by the signal line driving circuit 120. Thereby, the conduction state or non-conduction state of the drive transistor Tr1 described later is selected.

  The pixel drive circuit 150 is provided in a layer between the support substrate 11 and the organic EL element 10, that is, a pixel drive circuit formation layer L1 (a TFT layer 12 described later). FIG. 3 shows a configuration example of the pixel driving circuit 150. The pixel driving circuit 150 is an active driving circuit having a driving transistor Tr1 and a writing transistor Tr2, a capacitor (holding capacitor) Cs therebetween, and the organic EL element 10. The organic EL element 10 is connected in series with the drive transistor Tr1 between the power supply line 140A and the common power supply line (GND). The drive transistor Tr1 and the write transistor Tr2 are configured by a general thin film transistor (TFT), and may have, for example, an inverted stagger structure (so-called bottom gate type) or a stagger structure (top gate type). Good.

  For example, the drain electrode of the writing transistor Tr2 is connected to the signal line 120A, and the video signal from the signal line driving circuit 120 is supplied. The gate electrode of the write transistor Tr2 is connected to the scanning line 130A, and a scanning signal is supplied from the scanning line driving circuit 130. Further, the source electrode of the write transistor Tr2 is connected to the gate electrode of the drive transistor Tr1.

  The drive transistor Tr1 has a drain electrode connected to the power supply line 140A, for example, and is set to either the first potential or the second potential by the power supply line drive circuit 140. The source electrode of the drive transistor Tr1 is connected to the organic EL element 10.

  The storage capacitor Cs is formed between the gate electrode of the drive transistor Tr1 (source electrode of the write transistor Tr2) and the drain electrode of the drive transistor Tr1.

[Main components of the display device]
Next, with reference to FIG. 1 again, detailed configurations of the support substrate 11, the pixel drive circuit formation layer L1, the light emitting element formation layer L2, the counter substrate 21, and the like will be described. Since the organic EL elements 10R, 10G, and 10B have a common configuration, they will be described together below.

The support substrate 11 is made of glass, silicon (Si) wafer, resin, or conductive substrate. Since light is extracted from the counter substrate 21 in the top emission type, the support substrate 11 may be formed of either a transmissive material or a non-transmissive material. In the case of using a conductive substrate, the surface is insulated with silicon oxide (SiO ₂ ) or resin.

  The pixel drive circuit formation layer L1 has a stacked structure of the TFT layer 12 and the planarization layer 13. In the pixel drive circuit formation layer L1, a drive transistor Tr1 and a write transistor Tr2 constituting the pixel drive circuit 150 are formed, and further, a signal line 120A, a scanning line 130A, and a power supply line 140A (not shown) are also formed. Buried.

  The configuration of the TFT (driving transistor Tr1, writing transistor Tr2) of the TFT layer 12 is not particularly limited. For example, a-Si (amorphous silicon), an oxide semiconductor, an organic semiconductor, or the like is used for the semiconductor layer. Also good. Further, the drive transistor Tr1 and the write transistor Tr2 may be configured by a MOSFET (Metal Oxide Semiconductor Field Effect Transistor).

The planarization layer 13 is for planarizing the surface of the support substrate 11 on which the pixel drive circuit 150 is formed. Since the fine connection hole 13H is provided, the planarization layer 13 is made of a material with high pattern accuracy. preferable. The drive transistor Tr1 of the TFT layer 12 is electrically connected to the organic EL element 10 (first electrode 14 described later) through a connection hole 13H provided in the planarization layer 13. A plug made of a conductive metal is provided in the connection hole 13H. Examples of the constituent material of the planarizing layer 13 include organic materials such as polyimide, or inorganic materials such as silicon oxide (SiO ₂ ), silicon nitride (SiNx), and silicon oxynitride (SiON).

  In the light emitting element forming layer L2, the organic EL element 10 and the insulating film (partition wall) 19 and a protective layer 18 covering them are provided.

  In the organic EL element 10, a first electrode 14 as an anode electrode, an organic layer including a hole injection layer 15 and a light emitting layer 16 and a second electrode 17 as a cathode electrode are sequentially stacked from the support substrate 11 side. It has been done. The organic layer has the same structure regardless of the emission color of the organic EL element 10 (10R, 10G, 10B). For example, from the first electrode 14 side, the hole injection layer 15 (functional layer), the positive layer A hole transport layer (not shown), a light emitting layer 16, an electron transport layer (not shown), and an electron injection layer (not shown) are laminated in this order. By applying an electric field, a part of holes injected from the first electrode 14 through the hole injection layer 15 and the hole transport layer, and injection from the second electrode 17 through the electron injection layer and the electron transport layer Part of the generated electrons is recombined in the light emitting layer 16 to generate light.

  The first electrode 14 is provided for each organic EL element 10, and the plurality of first electrodes 14 are disposed on the planarizing layer 13 so as to be separated from each other. The first electrode 14 has a function as an anode and a function as a reflection layer, and is preferably made of a material having a high reflectance and a high hole injection property. As such a first electrode 14, for example, the thickness in the stacking direction (hereinafter simply referred to as thickness) is 30 nm or more and 1000 nm or less, and chromium (Cr), gold (Au), platinum (Pt), nickel (Ni ), Copper (Cu), molybdenum (Mo), tungsten (W), titanium (Ti), tantalum (Ta), aluminum (Al), silver (Ag), or the like. These may be laminated to form the first electrode 14.

  In the present embodiment, a hole trap 19C is provided between adjacent first electrodes 14 (interelectrode region H). Thereby, the movement of holes through the hole injection layer 15 can be suppressed, and the occurrence of leakage current can be prevented. Here, the insulating film 19 as a partition also serves as the hole capturing portion 19C. That is, the hole capturing portion 19 </ b> C is configured by the entire insulating film 19.

The insulating film 19 is for ensuring insulation between the first electrode 14 and the second electrode 17 and insulation between the adjacent organic EL elements 10. In addition, the light emitting region can be accurately controlled to a desired shape by the opening of the insulating film 19. The cross section (XZ cross section) shape of the insulating film 19 may be a forward taper shape (FIG. 1), a rectangular shape or the like (not shown). The insulating film 19 is made of a material having a hole trap level, for example, a material having unpaired electrons or negative charges. For example, when a film containing silicon (Si) is formed by a plasma CVD (Chemical Vapor Deposition) method at a low temperature of about 130 ° C., the insulating film 19 having a hole trap level is formed. Examples of the film containing silicon include silicon nitride (SiN _x ), silicon oxide (SiO _x ), silicon oxynitride (SiON), silicon carbide (SiC), and SiOC. The thickness of the insulating film 19 is, for example, about 1 nm to 100 nm.

  The organic layer is common to all the organic EL elements 10 and is also provided in the interelectrode region H. The hole injection layer 15 is a buffer layer for allowing holes (carriers) to pass therethrough and improving hole injection efficiency, and for preventing leakage. The hole injection layer 15 having a hole passing function covers the insulating film 19 in the interelectrode region H from the first electrode 14 and is in contact with the insulating film 19. For this reason, the holes moving between the organic EL elements 10 through the hole injection layer 15 are taken into the hole trapping portion 19C (insulating film 19) and disappear. The hole injection layer 15 has a thickness of, for example, 5 nm to 300 nm and is made of the hexaazatriphenylene derivative shown in Chemical Formula 1 or Chemical Formula 2.

（化１において、Ｒ１〜Ｒ６それぞれ独立に、水素、ハロゲン、ヒドロキシル基、アミノ基、アルールアミノ基、炭素数２０以下の置換あるいは無置換のカルボニル基、炭素数２０以下の置換あるいは無置換のカルボニルエステル基、炭素数２０以下の置換あるいは無置換のアルキル基、炭素数２０以下の置換あるいは無置換のアルケニル基、炭素数２０以下の置換あるいは無置換のアルコキシル基、炭素数３０以下の置換あるいは無置換のアリール基、炭素数３０以下の置換あるいは無置換の複素環基、ニトリル基、シアノ基、ニトロ基、またはシリル基から選ばれる置換基であり、隣接するＲｍ（ｍ＝１〜６）は環状構造を通じて互いに結合してもよい。また、Ｘ１〜Ｘ６はそれぞれ独立に炭素もしくは窒素原子である。）

(In Chemical Formula 1, each of R1 to R6 is independently hydrogen, halogen, hydroxyl group, amino group, arylamino group, substituted or unsubstituted carbonyl group having 20 or less carbon atoms, substituted or unsubstituted carbonyl group having 20 or less carbon atoms. Ester group, substituted or unsubstituted alkyl group having 20 or less carbon atoms, substituted or unsubstituted alkenyl group having 20 or less carbon atoms, substituted or unsubstituted alkoxyl group having 20 or less carbon atoms, substituted or unsubstituted carbon group having 30 or less carbon atoms A substituted aryl group, a substituted or unsubstituted heterocyclic group having 30 or less carbon atoms, a nitrile group, a cyano group, a nitro group, or a silyl group, and adjacent Rm (m = 1 to 6) are And may be bonded to each other through a cyclic structure, and X1 to X6 are each independently a carbon or nitrogen atom.)

  The hole transport layer is for increasing the efficiency of transporting holes to the light emitting layer 16. The hole transport layer has a thickness of about 40 nm, for example, and is made of 4,4 ′, 4 ″ -tris (3-methylphenylphenylamino) triphenylamine (m-MTDATA) or α-naphthylphenyldiamine (αNPD). A material having a hole transport function may be selected as the hole injection layer.

  The light emitting layer 16 is a light emitting layer for white light emission. For example, a red light emitting layer, a green light emitting layer, and a blue light emitting layer (all of which are provided between the first electrode 14 and the second electrode 17). Z). The red light emitting layer, the green light emitting layer, and the blue light emitting layer generate red, green, and blue light, respectively, by recombination of holes and electrons.

  The red light emitting layer includes, for example, at least one of a red light emitting material, a hole transporting material, an electron transporting material, and a both charge transporting material. The red light emitting material may be fluorescent or phosphorescent. The red light-emitting layer has, for example, a thickness of about 5 nm, and 2,4-bis [(4′-methoxydiphenylamino) styryl]-is added to 4,4-bis (2,2-diphenylbinine) biphenyl (DPVBi). It is composed of 30% by weight of 1,5-dicyanonaphthalene (BSN).

  The green light emitting layer includes, for example, at least one of a green light emitting material, a hole transporting material, an electron transporting material, and a charge transporting material. The green light emitting material may be fluorescent or phosphorescent. The green light emitting layer has a thickness of about 10 nm, for example, and is composed of DPVBi mixed with 5% by weight of coumarin 6.

  The blue light emitting layer includes, for example, at least one of a blue light emitting material, a hole transporting material, an electron transporting material, and a charge transporting material. The blue light emitting material may be fluorescent or phosphorescent. For example, the blue light-emitting layer has a thickness of about 30 nm, and 2.5% by weight of 4,4′-bis [2- {4- (N, N-diphenylamino) phenyl} vinyl] biphenyl (DPAVBi) is added to DPVBi. It is composed of a mixture.

The electron transport layer is for increasing the efficiency of electron transport to the light emitting layer 16, and is made of, for example, 8-hydroxyquinoline aluminum (Alq3) having a thickness of about 20 nm.
The electron injection layer is for increasing the efficiency of electron injection into the light emitting layer 16 and is made of, for example, LiF or Li ₂ O having a thickness of about 0.3 nm.

  The second electrode 17 is paired with the first electrode 14 with the organic layer interposed therebetween, and is provided in common with the organic EL element 10 on the electron injection layer while being insulated from the first electrode 14. For example, the second electrode 17 is provided on the entire surface of the support substrate 11 and also exists in the inter-electrode region H. The second electrode 17 is made of a light transmissive transparent material, and is made of, for example, an alloy of aluminum (Al), magnesium (Mg), silver (Ag), calcium (Ca), or sodium (Na). Among them, an alloy of magnesium and silver (Mg—Ag alloy) is preferable because it has both conductivity in a thin film and small absorption. The ratio of magnesium and silver in the Mg—Ag alloy is not particularly limited, but it is desirable that the film thickness ratio is in the range of Mg: Ag = 20: 1 to 1: 1. The material of the second electrode 17 may be an alloy of aluminum (Al) and lithium (Li) (Al—Li alloy), indium tin oxide (ITO), zinc oxide (ZnO). Alumina-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), indium zinc oxide (IZO), indium titanium oxide (ITiO), indium tungsten oxide (IWO), or the like may be used.

  The protective film 18 is formed of an insulating resin material such as polyimide, for example, similarly to the planarization layer 13.

  The counter substrate 21 seals the organic EL element 10 together with an adhesive layer (not shown) such as a thermosetting resin, and is made of a transparent glass or plastic material that transmits light generated in the light emitting layer 16. Has been. A color filter (not shown) is provided on one surface of the counter substrate 21. The color filter has a red filter, a green filter, and a blue filter, and is sequentially arranged corresponding to the organic EL elements 10R, 10G, and 10B. The color filter may be provided on either side of the counter substrate 21, but is preferably provided on the organic EL element 10 side. This is because the color filter is not exposed on the surface and can be protected by the protective layer 18 (or adhesive layer). In addition, since the distance between the light emitting layer 16 and the color filter is narrowed, it is possible to prevent light emitted from the light emitting layer 16 from entering the adjacent color filters and causing color mixing. is there.

  Such a display device 1 can be manufactured as follows, for example (FIGS. 4A to 5B).

  First, after the pixel drive circuit 150 (TFT layer 12) including the drive transistor Tr1 is formed on the support substrate 11 made of the above-described material, for example, a photosensitive resin is applied to the entire surface of the support substrate 11. As the TFT layer 12, for example, a low-temperature polysilicon process is used to form a semiconductor layer and an aluminum wiring. Next, the applied photosensitive resin is exposed and developed, and patterned into a predetermined shape to form the planarization layer 13. Simultaneously with the patterning of the planarization layer 13, the connection holes 13H and plugs are formed. Subsequently, a metal film 14M is formed on the planarizing layer 13 by sputtering, for example (FIG. 4A). Next, the plurality of first electrodes 14 are formed by patterning the metal film 14M through processes such as photolithography, etching, and cleaning (FIG. 4B).

After that, as shown in FIG. 4C, an insulating material film 19M having a hole trap level over the entire surface of the support substrate 11 is formed. This insulating material film 19M is formed, for example, by depositing silicon nitride at 130 ° C. by plasma CVD. For example, plasma generation RF power 0.5 kW, pressure 250 Pa, silane (SiH ₄ ) gas flow rate 2.0 slm (L / min), ammonia (NH ₃ ) gas flow rate 0.5 slm, By reacting by plasma irradiation, an insulating material film 19M made of silicon nitride can be formed. While the normal film formation temperature is 700 to 800 ° C., the hole trap level is formed in the insulating material film 19 by forming the film at a lower temperature, for example, 80 to 400 ° C. Further, it is preferable to form the film at 400 ° C. or lower in order to prevent the influence on the TFT layer 12. When the TFT layer 12 is formed using an organic semiconductor material, it is preferable to form the insulating material film 19 at a lower temperature, for example, 100 ° C. or lower. For example, the insulating material film 19M can be formed even when the film forming temperature is lowered from 130 ° C. to room temperature under the conditions of the plasma CVD method.

  After forming the insulating material film 19M, for example, photolithography and etching are performed to provide an opening in the insulating material film 19M to expose the surface of the first electrode 14. Thereby, the insulating film 19 (hole capturing part 19C) is formed (FIG. 5A).

  Subsequently, as shown in FIG. 5B, the hole injection layer 15 is formed on the entire surface of the support substrate 11 by, for example, vapor deposition, and covers the first electrode 14 and the insulating film 19 in the interelectrode region H. 15 is provided. Subsequently, the hole transport layer (not shown), the light emitting layer 16, the electron transport layer (not shown), the electron injection layer (not shown), and the second electrode 17 are sequentially deposited on the entire surface of the support substrate 11 by, for example, vapor deposition. The film is formed. Thereby, the organic EL element 10 is formed.

  Next, the protective layer 18 is formed on the organic EL element 10 by, for example, CVD or sputtering. Finally, the counter substrate 21 provided with a color filter is bonded to the protective layer 18 with an adhesive layer (not shown) therebetween to complete the display device 1.

  In the display device 1, a scanning signal is supplied from the scanning line driving circuit 130 to the organic EL elements 10 (10 R, 10 G, and 10 B) via the gate electrode of the writing transistor Tr 2, and from the signal line driving circuit 120. The image signal is held in the holding capacitor Cs via the write transistor Tr2. That is, the drive transistor Tr1 is on / off controlled in accordance with the signal held in the holding capacitor Cs. As a result, a drive current Id is injected into each organic EL element 10, and holes and electrons recombine in the stacking direction of the first electrode 14, the hole injection layer 15, the light emitting layer 16, and the second electrode 17 to emit light. Happens. This light passes through the second electrode 17, the color filter (not shown), and the counter substrate 21 and is extracted.

  Here, since the insulating film 19 also serving as the hole trapping portion 19C is provided in the interelectrode region H, the holes moving between the organic EL elements 10 via the hole injection layer 15 are transferred to the hole trapping portion 19C. It is taken into (insulating film 19). Therefore, generation of leakage current can be prevented.

  FIG. 6 illustrates a manufacturing process of the display device (display device 100) according to Comparative Example 1. This display device 100 is formed by providing an insulating film (insulating film 119) in the interelectrode region H in a reverse taper shape (FIG. 6), and thinning or disconnecting the hole injection layer 15 between the elements by the insulating film 119. Is done. In such a display device 100, the hole injection layer is not sufficiently increased in resistance for the following reasons, and there is a possibility that leakage cannot be prevented. First, it is difficult to accurately control the shape of the insulating film 119 so that the resistance of the hole injection layer is increased between elements. In addition, when the non-vertical component of the hole injection layer is deposited from the evaporation crucible, the hole injection layer cannot be thinned, or the process after forming the hole injection layer even if the film is thinned, for example, the organic layer The resistance value of the hole injection layer may be returned by a thermal process such as vapor deposition. Furthermore, the organic layer other than the hole injection layer and the portion where the second electrode 17 is thinned by the insulating film 119 emit light with a lower current stress than the other portions. That is, unnecessary light emission may occur due to a factor different from the leak current through the hole injection layer 15.

  On the other hand, in the display device 1, since the hole trapping portion 19 </ b> C is provided in the interelectrode region H, the holes moving between the adjacent organic EL elements 10 are captured and eliminated, and the hole injection layer 15 is interposed. Generation of leak current can be suppressed. In the display device 1, precise control of the shape of the insulating film 19 and the thickness of the hole injection layer 15 is unnecessary, and the effect of trapping holes by the insulating film 19 is reduced even if a thermal process is performed in the manufacturing process. There is nothing. Furthermore, local thinning of the organic layer and the second electrode 17 can be prevented.

  As described above, in the display device 1 according to the present embodiment, since the hole capturing portion 19C is provided in the interelectrode region H, it is possible to more reliably prevent the occurrence of leakage current via the hole injection layer 15. it can. Accordingly, display image quality can be improved while suppressing color mixing.

  Hereinafter, modifications of the above-described embodiment and other embodiments will be described. In the following description, the same components as those of the above-described embodiment will be denoted by the same reference numerals, and the description thereof will be omitted as appropriate.

<Modification 1>
FIG. 7 illustrates a cross-sectional configuration of a display device (display device 1A) according to the first modification. In the display device 1 </ b> A, a hole capturing portion 19 </ b> C is configured by a part of the insulating film 19. In the display device 1 </ b> A, a hole trap 19 </ b> C is provided on the counter substrate 21 (upper surface) side of the insulating film 19. Except for this point, the display device 1A has the same configuration as the display device 1, and the operation and effect thereof are also the same.

  The hole trapping portion 19C included in the insulating film 19 is made of a material having a hole trapping level like the insulating film 19 of the above embodiment, and is in contact with the hole injection layer 15. Thereby, generation | occurrence | production of the leakage current through the hole injection layer 15 can be suppressed.

  The insulating film 19 including the hole capturing part 19C as a part can be formed as follows, for example.

（化３において、Ｒ７は炭化水素基、Ｒ８は炭化水素基またはポリマー結合を構成する無機元素である。Ｒ７，Ｒ８の炭化水素基には無機元素が含まれていてもよく、Ｒ７，Ｒ８の炭化水素基がポリマーであってもよい。） First, after forming up to the first electrode 14 in the same manner as described in the above embodiment, a precursor 19A is formed in the inter-electrode region H as shown in FIG. 8A. The precursor 19A is made of an insulating material that generates a hole trap level by performing a surface treatment. As the surface treatment, for example, a method using energy rays (energy rays E described later) can be used. This precursor 19A is made of, for example, a polymer containing silicon shown in Chemical formula 3. The precursor 19A may be other than the polymer shown in Chemical Formula 3 as long as the bond is cut by irradiation with energy rays and a hole trap level is formed.

(In Chemical formula 3, R7 is a hydrocarbon group, R8 is a hydrocarbon group or an inorganic element constituting a polymer bond. The hydrocarbon group of R7 and R8 may contain an inorganic element. (The hydrocarbon group may be a polymer.)

For example, the polymer shown in Chemical Formula 3 (for example, R7 and R8 are C _n H _{2n + 1} ) can be formed by a CVD method. For example, a silane-based gas having a hydrocarbon group such as trimethylsilane (3MS: [SiH (CH ₃ ) ₃ ]), oxygen (O ₂ ), and helium (He) are flowed to form a film using a plasma CVD apparatus. As film formation conditions, for example, the flow rates of silane gas, oxygen (O ₂ ) and helium (He) are each set to 1000 cm ³ / min, the pressure of the film formation atmosphere is set to 600 Pa, and the RF (Radio Frequency) power of the CVD apparatus is set to 700 W. To do. Thereby, a polymer (chemical formula 3) in which R7 and R8 are methyl groups (CH ₃ ) can be formed, and such a polymer has an intensity ratio of FT-IR, for example, an —OH group (3600 cm ⁻¹ ). It becomes 0.3 or more with respect to Si-O bond (1039 cm < ^-1 >). Examples of the silane-based gas having a hydrocarbon group include tetramethylsilane (4MS), hexamethyldisilane (HMDS), octamethylcyclotetrasiloxane (OMCTS), tetramethylcyclotetrasiloxane (TMCTS), dimethyl, in addition to the above trimethylsilane. Phenylsilane (DMPS), diethoxymethylsilane (DEMS), dimethyldimethoxysilane (DMDMOS), and the like may be used. It is also possible to use a gas other than silane, for example, a carbon-based gas such as methane (CH ₄ ) or ethylene (C ₂ H ₄ ).

  The polymer shown in Chemical Formula 3 may be formed using a coating method. For example, methyl silsesquioxane (MSQ) can be applied to form the precursor 19A. The organic component content in the precursor 19A can be adjusted by selecting a coating material and heat treatment conditions.

After providing the precursor 19A, as shown in FIG. 8B, for example, by irradiating the surface of the first electrode 14 with ultraviolet light as an energy ray E from the vertical direction, hole trapping is performed on the upper surface of the insulating film 19 A portion 19C is formed (FIG. 8C). As is well known in the field of semiconductor devices, at this time, if the insulating film 19 is made of, for example, the material shown in Chemical Formula 3, the bond of Si-R7 or Si-R8 is cut by irradiation with the energy beam E. As a result, defects occur in SiO ₂ . That is, unpaired electrons are generated and a hole trap level is formed in the insulating film 19. When R7 and R8 contain oxygen and there is a Si—O—C bond in Chemical Formula 3, the O—C bond may be cut to form a hole trap level. In consideration of the coupling to be cut and the influence (penetration length) on the first electrode 14, the energy line E is selected and its energy is adjusted. A mask may be used when the energy beam E is irradiated. As the energy beam E, in addition to ultraviolet light, ions or plasma can be used. After irradiating the energy beam E, an opening may be provided to form the hole trap 19C. Further, the energy ray E may be further irradiated to the material in which the hole trap level is already provided. In order to prevent the hole injection layer 15, the light emitting layer 16, and the like from being exposed to the outside air during the formation of the organic layer, for example, an irradiation portion of the energy beam E is provided in the film formation apparatus, and the second injection layer 15 through the second injection layer 15. The electrodes 17 or the protective layer 18 are continuously formed in an inert gas atmosphere or in a vacuum. It is preferable to continuously form the film from the hole injection layer 15 to the protective layer 18.

  FIG. 9 illustrates a manufacturing process of the display device (display device 101) according to Comparative Example 2. In the display device 101, the hole trap portion is not provided in the insulating film 129 in the interelectrode region. The display device 101 uses the mask 122 to locally irradiate ultraviolet rays UV, thereby partially altering the hole injection layer 15 between elements to prevent leakage current. In the display device 101 as well, the resistance value may be returned by the process after the formation of the hole injection layer 15 as in the display device 100. Further, since the effect of ultraviolet UV irradiation depends on the material of the hole injection layer 15, it is difficult to reliably prevent the leakage current. Further, since it is necessary to irradiate the ultraviolet ray UV for a long time in order to alter the hole injection layer 15, the ultraviolet ray UV wraps around from the end portion of the mask 122 to inject holes on the first electrode 14 (light emitting region). There is also a possibility of deteriorating the layer 15.

  On the other hand, in the display device 1A, similarly to the display device 1, the effect of the hole trapping portion 19C is not reduced by the thermal process after the formation of the hole injection layer 15. In addition, since the hole capturing portion 19C is provided separately from the hole injection layer 15, leakage current can be prevented regardless of the material of the hole injection layer 15. Therefore, the generation of leakage current through the hole injection layer 15 can be prevented more reliably. Further, since the energy beam E is irradiated before forming the organic layer such as the hole injection layer 15, the organic layer is not deteriorated due to the irradiation of the energy beam E. In addition, a part of the hole trapping portion 19C of the insulating film 19 can be easily formed as compared with the hole trapping portion 19C (display device 1) constituted by the whole insulating film 19.

  The insulating film 19 including the hole capturing portion 19C can be formed by changing the CVD film forming conditions. Specifically, as shown in FIG. 10A, first, an insulating material film 19MA is formed at 200 ° C., for example, and then the temperature is lowered, and an insulating material film 19MB is formed at 130 ° C., for example (FIG. 10B). For example, silicon nitride is used for the insulating material films 19MA and 19MB. The insulating material film 19MB formed at a low temperature has a hole trap level. By patterning the laminated insulating material films 19MA and 19MB to provide openings, the insulating film 19 including the hole trapping portion 19C is formed (FIG. 10C).

<Modification 2>
FIG. 11 illustrates a cross-sectional configuration of a display device (display device 1B) according to the second modification. In this display device 1B, the hole trapping portion 19C is constituted by a part of the insulating film 19 as in the display device 1A. However, the hole trapping portion on the opening (first electrode 14) side of the insulating film 19 is used. A portion 19C is provided. Except for this point, the display device 1B has the same configuration as the display device 1, and the operation and effect thereof are also the same.

  The hole capturing part 19C of the display device 1B is provided from the counter substrate 21 side (upper surface) to the opening side (side surface) of the insulating film 19, and is in contact with the hole injection layer 15. That is, since the portion of the hole injection layer 15 thinned by the taper of the insulating film 19 is in contact with the hole capturing portion 19C, the generation of leakage current can be prevented more efficiently.

  Such a hole capturing part 19C can be formed, for example, by irradiation with energy rays E. Specifically, first, as shown in FIG. 12A, the precursor 19A is formed from the polymer shown in Chemical Formula 3 or the like. For the precursor 19A, a material in which a hole trap level is previously formed may be used as in the display device 1 described above. Next, as shown in FIG. 12B, for example, ion implantation (energy ray E) is performed on the insulating film 19 at an angle (low angle) of less than 90 degrees with respect to the surface of the first electrode 14. As a result, a hole capturing portion 19C is formed from the upper surface to the side surface of the insulating film 19 (FIG. 12C). The angle at which ion implantation is performed is adjusted in consideration of the influence on the first electrode 14. As the energy beam E, in addition to ion implantation, ultraviolet light irradiation, plasma irradiation, or the like may be used, and a mask may be used when the energy beam E is used. Further, the energy beam E (FIG. 8B) from the direction perpendicular to the surface of the first electrode 14 and the energy beam E at a low angle may be used in combination.

<Second Embodiment>
FIG. 13 illustrates a cross-sectional configuration of a display device (display device 2) according to the second embodiment. In this display device 2, a film-like hole capturing portion 22C is provided on the surface of an insulating film (insulating film 29). Except for this point, the display device 2 has the same configuration as that of the display device 1, and the operation and effect thereof are also the same.

  The film-like hole trapping portion 22C is made of a material having a hole trapping level, and is provided on the surface of the insulating film 29 in the interelectrode region H. The hole injection layer 15 is in contact with the hole capturing portion 22C, and holes moving through the hole injection layer 15 are taken into the hole capturing portion 22C. As the insulating film 29, a material other than a material having a hole trap level or a material that forms a hole trap level by performing a predetermined treatment can be used. Alternatively, the insulating film 29 is made of a material having a hole trap level as in the display device 1 (insulating film 19), and the film-like hole trapping portion 22C and the hole trapping portion 19C by the insulating film 19 are formed. Both may be provided (FIG. 14).

  The hole trapping portion 22C is formed by depositing silicon nitride or the like on the insulating film 29 (FIG. 15A) by, for example, plasma CVD at a temperature of about 130 ° C., and then patterning it through processes such as photolithography, etching, and cleaning. (FIG. 15B). A hole injection layer 15 is formed on the hole capturing portion 22C (FIG. 15C).

  The hole trap 22C may be formed using a material (precursor 22A) that generates a hole trap level when irradiated with the energy beam E. As shown in FIG. 16A, first, a precursor 22A made of, for example, the polymer shown in Chemical Formula 3 is provided on the insulating film 29 by patterning, and then irradiated with, for example, ultraviolet light as energy rays E (FIG. 16B). ). Thereby, the hole capturing part 22C having the hole capturing level is formed from the precursor 22A (FIG. 16C).

<Third Embodiment>
FIG. 17 illustrates a cross-sectional configuration of a display device (display device 3) according to the third embodiment. In the display device 3, an irradiated portion (irradiated portion 15 </ b> R) of the hole injection layer 15 is provided in the interelectrode region H together with the film-shaped hole capturing portion 22 </ b> C. Except for this point, the display device 3 has the same configuration as that of the display device 2, and the operation and effect thereof are also the same.

  The irradiated portion 15R of the hole injection layer 15 is a portion where the hole injection layer 15 is irradiated with energy rays (FIG. 19A, energy rays E). The irradiated portion 15R is altered by the irradiation of the energy beam E, and has a higher resistance value than other portions that are not irradiated. As a result, the occurrence of leakage current through the hole injection layer 15 can be prevented with a higher probability.

  The irradiated portion 15R of the hole injection layer 15 is formed as follows, for example. First, after the precursor 22A is patterned and provided on the surface of the insulating film 29 in the interelectrode region H (FIG. 18A) (FIG. 18B), the hole injection layer 15 is formed on the precursor 22A and the first electrode. Film (FIG. 18C). Next, using the mask 23, the inter-electrode region H is irradiated with, for example, ultraviolet light as energy rays E (FIG. 19A). Thereby, the irradiated portion 15R of the hole injection layer 15 is formed together with the hole capturing portion 22C (FIG. 19B). In order to prevent the irradiation of the energy beam E from affecting the light emitting region, it is preferable to provide a margin in the mask 23 so as to cover a region wider than the light emitting region. Since the irradiation time of the energy beam E for providing the hole trapping portion 22C is shorter than the irradiation time for altering the hole injection layer 15, the leakage current is obtained without deteriorating the hole injection layer 15 in the light emitting region. Can be prevented (FIG. 9).

<Fourth embodiment>
FIG. 20 illustrates a cross-sectional configuration of a display device (display device 4) according to the fourth embodiment. The display device 4 is provided with the irradiated portion 15R of the hole injection layer 15 similarly to the display device 3, but the insulating film 19 is provided with a hole capturing portion 19C. Except for this point, the display device 4 has the same configuration as that of the display device 3, and the operation and effect thereof are also the same.

The irradiated portion 15R of the hole injection layer 15 is formed as follows, for example. First, after forming the precursor 19A from a material that generates a hole trap level by irradiation with the energy beam E (FIG. 8A), the hole injection layer 15 is formed on the precursor 19A and the first electrode. Next, the irradiated portion 15R of the hole injection layer 15 is formed together with the hole capturing portion 19C of the insulating film 19 by irradiating the energy beam E using a mask. After forming up to the hole transport layer (not shown), the energy beam E may be irradiated. A part of the hole trapping portion 19C of the insulating film 19
The irradiated portion 15R having a high resistance can prevent the occurrence of a leakage current through the hole injection layer 15 with a higher probability.

<Fifth embodiment>
FIG. 21 illustrates a cross-sectional configuration of a display device (display device 5) according to the fifth embodiment. The display device 5 has an organic layer separated for each organic EL element 10. Except for this point, the display device 5 has the same configuration as that of the display device 1, and the operation and effect thereof are also the same.

  The organic layer including the hole injection layer 45 and the light emitting layer 46 can be formed by, for example, an inkjet method or a vapor deposition method using a mask. Leakage current may be generated through the organic layer (especially, hole injection layer) of the adjacent organic EL element due to diffusion of the jetted solution in the ink jet method and leakage from the mask edge in the vapor deposition method. There is. For this reason, by providing the hole trap 19C (or hole trap 22C), it is possible to more reliably prevent the leak current from occurring in the display device 4. 21 illustrates the case where the organic layer of the display device 1 (FIG. 1) is separated for each organic EL element 10, the display device 1A (FIG. 7), the display device 1B (FIG. 11), and the display device 2 ( The same applies to the display device 3 (FIG. 17) and the display device 4 (FIG. 20).

(module)
The display devices 1, 1A, 1B, 2, 3, 4, 5 (hereinafter simply referred to as the display device 1) of the above-described embodiments and modifications are, for example, applied as described later as modules as shown in FIG. Incorporated into various electronic devices such as Examples 1-5. In particular, it is also suitable for a micro display or the like that requires high resolution such as a viewfinder of a video camera or a single-lens reflex camera or a head-mounted display. In this module, for example, a region 210 exposed from the counter substrate 21 is provided on one side of the support substrate 11, and the wirings of the signal line driving circuit 120 and the scanning line driving circuit 130 are extended to the exposed region 210 for external connection. A terminal (not shown) is formed. The external connection terminal may be provided with a flexible printed circuit (FPC) 220 for signal input / output.

(Application example 1)
FIG. 23 illustrates an appearance of a television device to which the display device 1 of the above embodiment is applied. The television apparatus has, for example, a video display screen unit 300 including a front panel 310 and a filter glass 320. The video display screen unit 300 is configured by the display device 1 according to each of the above embodiments. Yes.

(Application example 2)
24A and 24B show the appearance of a digital camera to which the display device 1 of the above embodiment is applied. The digital camera includes, for example, a flash light emitting unit 410, a display unit 420, a menu switch 430, and a shutter button 440. The display unit 420 is configured by the display device 1 according to each of the above embodiments. ing.

(Application example 3)
FIG. 25 shows the appearance of a notebook personal computer to which the display device 1 of the above embodiment is applied. The notebook personal computer has, for example, a main body 510, a keyboard 520 for inputting characters and the like, and a display unit 530 for displaying an image. The display unit 530 is a display according to each of the above embodiments. The apparatus 1 is configured.

(Application example 4)
FIG. 26 shows the appearance of a video camera to which the display device 1 of the above embodiment is applied. This video camera has, for example, a main body 610, a subject photographing lens 620 provided on the front side surface of the main body 610, a start / stop switch 630 at the time of photographing, and a display 640. Reference numeral 640 denotes the display device 1 according to each of the above embodiments.

(Application example 5)
27A and 27B show the appearance of a mobile phone to which the display device 1 of the above embodiment is applied. For example, the mobile phone is obtained by connecting an upper housing 710 and a lower housing 720 with a connecting portion (hinge portion) 730, and includes a display 740, a sub-display 750, a picture light 760, and a camera 770. Yes. The display 740 or the sub-display 750 is configured by the display device 1 according to each of the above embodiments.

  Although the present technology has been described with the embodiment and the modification, the present technology is not limited to the above-described embodiment and the like, and various modifications can be made. For example, the material and thickness of each layer described in the above embodiment and the like, or the film formation method and film formation conditions are not limited, and other materials and thicknesses may be used. It is good also as film | membrane conditions.

  In the above-described embodiment and the like, the case where a light emitting layer for white light emission including three layers of a red light emitting layer, a green light emitting layer, and a blue light emitting layer is formed as the light emitting layer 16 has been described. The configuration of the layer 16 is not particularly limited, and may be a structure in which two light emitting layers having complementary colors such as an orange light emitting layer and a blue light emitting layer, or a blue green light emitting layer and a red light emitting layer are stacked. Furthermore, the light emitting layer 16 is not limited to the light emitting layer for white light emission, but can be applied to a monochrome display device in which only a green light emitting layer is formed, for example.

  In addition, for example, in the above-described embodiment, the case where the first electrode 14 is an anode and the second electrode 17 is a cathode has been described. However, the anode and the cathode are reversed, and the first electrode 14 is the cathode and the second electrode. 17 may be an anode. In addition, the display devices 3 and 4 may be bottom emission type display devices. Furthermore, in the above embodiment, the case of having a hole trapping portion as a carrier trapping portion has been described, but an electron trapping portion can also be provided.

In addition, this technique can also take the following structures.
(1) A display device comprising a plurality of first electrodes, a carrier trap provided in a region between the electrodes, and a functional layer that covers the first electrode and the carrier trap and has a carrier passing function.
(2) The display device according to (1), wherein the functional layer is in contact with the carrier capturing unit.
(3) A hole injection layer as the functional layer, a second electrode paired with the first electrode with the hole injection layer interposed therebetween, and between the second electrode and the hole injection layer A light emitting layer,
The display device according to (1) or (2), wherein holes moving through the hole injection layer are captured by the carrier capturing unit.
(4) The display device according to any one of (1) to (3), wherein the carrier capturing unit is at least a part of an insulating film provided in the inter-electrode region.
(5) The display device according to (4), wherein the carrier capturing unit is configured by the entire insulating film.
(6) The display device according to (4), wherein the carrier capturing portion is included in a part of the insulating film.
(7) The display device according to any one of (1) to (3), wherein the carrier capturing portion is provided on a surface of an insulating film provided in the interelectrode region.
(8) The display device according to (3), wherein the second electrode and the light emitting layer are also provided in the inter-electrode region.
(9) The display device according to (3), wherein the hole injection layer has an irradiated portion irradiated with an energy ray in an inter-electrode region.
(10) The display device according to any one of (1) to (9), wherein the carrier capturing unit is made of a compound containing silicon (Si).
(11) The display device includes a plurality of first electrodes, a carrier trap provided in a region between the electrodes, and a functional layer that covers the first electrode and the carrier trap and has a carrier passing function. And electronic equipment including.
(12) A step of forming a plurality of first electrodes, a step of forming a carrier trapping portion in a region between the electrodes, and a functional layer having a carrier passing function are formed so as to cover the first electrode and the carrier trapping portion. The manufacturing method of the display apparatus including the process to do.
(13) After forming a hole injection layer as the functional layer, a light emitting layer covering the hole injection layer and a second electrode paired with the first electrode with the light emitting layer and the hole injection layer interposed therebetween The method for manufacturing a display device according to (12), wherein a hole moving through the hole injection layer is captured by the carrier capturing unit.
(14) The method for manufacturing a display device according to (13), wherein an insulating film is formed in the inter-electrode region.
(15) The manufacturing method of the display device according to (14), wherein the carrier capturing unit is configured by forming the insulating film by a CVD (Chemical Vapor Deposition) method.
(16) The method for manufacturing a display device according to (14), wherein the carrier capturing portion is formed by performing a surface treatment on the insulating film.
(17) The method for manufacturing a display device according to (16), wherein an energy beam is used as the surface treatment.
(18) The method for manufacturing a display device according to (17), wherein the energy beam is irradiated at an angle of less than 90 degrees with respect to the surface of the first electrode.
(19) After forming the hole injection layer, the energy beam is irradiated to continuously form the hole injection layer to the second electrode in an inert gas atmosphere or in vacuum. Or the manufacturing method of the display apparatus as described in (18).
(20) The manufacturing method of the display device according to (14), wherein the carrier capturing portion is formed on a surface of the insulating film.

  DESCRIPTION OF SYMBOLS 1,1A, 1B, 2,3,4,5 ... Display apparatus 10, 10R, 10G, 10B ... Organic EL element, L1 ... Pixel drive circuit formation layer, L2 ... Light emitting element formation Layer 11, supporting substrate 12 TFT layer 13 flattening layer 13 H connection hole 14 first electrode 15 hole injection layer 15 R .. irradiated portion, 16... Luminescent layer, 17... Second electrode, 18... Protective film, 19, 29... Insulating film, 19 C, 22 C. ..Substrate for sealing, 22... Hole capture film

Claims (20)

A plurality of first electrodes;
A carrier trap provided in the interelectrode region;
A display device comprising: a functional layer that covers the first electrode and the carrier capturing part and has a carrier passing function. The display device according to claim 1, wherein the functional layer is in contact with the carrier capturing unit. A hole injection layer as the functional layer;
A second electrode paired with the first electrode with the hole injection layer in between;
A light emitting layer between the second electrode and the hole injection layer,
The display device according to claim 2, wherein the holes moving through the hole injection layer are captured by the carrier capturing unit. The display device according to claim 3, wherein the carrier capturing unit is at least a part of an insulating film provided in the inter-electrode region. The display device according to claim 4, wherein the carrier capturing portion is configured by the entire insulating film. The display device according to claim 4, wherein the carrier capturing part is included in a part of the insulating film. The display device according to claim 3, wherein the carrier capturing portion is provided on a surface of an insulating film provided in the inter-electrode region. The display device according to claim 3, wherein the interelectrode region also includes the second electrode and a light emitting layer. The display device according to claim 3, wherein the hole injection layer includes an irradiated portion irradiated with an energy beam in an inter-electrode region. The display device according to claim 1, wherein the carrier trap is made of a compound containing silicon (Si). A display device,
The display device
A plurality of first electrodes;
A carrier trap provided in the interelectrode region;
An electronic device comprising: a functional layer that covers the first electrode and the carrier capturing part and has a carrier passing function. Forming a plurality of first electrodes;
Forming a carrier trap in the interelectrode region;
Forming a functional layer having a carrier passing function so as to cover the first electrode and the carrier capturing part. After forming the hole injection layer as the functional layer,
Forming a light emitting layer covering the hole injection layer and a second electrode paired with the first electrode with the light emitting layer and the hole injection layer interposed therebetween,
The manufacturing method of the display device according to claim 12, wherein holes moving through the hole injection layer are captured by the carrier capturing unit. The method for manufacturing a display device according to claim 13, wherein an insulating film is formed in the inter-electrode region. The method for manufacturing a display device according to claim 14, wherein the carrier capturing unit is configured by forming the insulating film by a CVD (Chemical Vapor Deposition) method. The method for manufacturing a display device according to claim 14, wherein the carrier capturing portion is formed by performing a surface treatment on the insulating film. The method for manufacturing a display device according to claim 16, wherein an energy beam is used as the surface treatment. The method for manufacturing a display device according to claim 17, wherein the energy beam is irradiated at an angle of less than 90 degrees with respect to a surface of the first electrode. After forming the hole injection layer, irradiate the energy beam,
The method for manufacturing a display device according to claim 17, wherein the hole injection layer to the second electrode are continuously formed in an inert gas atmosphere or in a vacuum. The method for manufacturing a display device according to claim 14, wherein the carrier capturing portion is formed on a surface of the insulating film.

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