JP2013236360A - Printed board and technique for designing the same - Google Patents
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Abstract
Description
高速・高性能な半導体集積回路(LSI)にはクロック信号生成に使用される位相同期回路(PLL)が搭載されており、PLL供給専用のアナログ電源(AVcc)、アナロググランド(AGnd)端子が設けられている。デジタル系の動作起因によるノイズが PLL 電源に回り込むと、ジッタが増大し、LSI の動作が不安定になる。本発明は、プリント基板(PCB)での AVcc、AGnd が外部ノイズの影響を抑制し、クロックジッタを低減する電源配線手法である。 High-speed, high-performance semiconductor integrated circuits (LSIs) are equipped with a phase-locked loop (PLL) used for clock signal generation, and are equipped with an analog power supply (AVcc) dedicated to PLL supply and an analog ground (AGnd) terminal It has been. When noise caused by digital operation circulates to the PLL power supply, jitter increases and LSI operation becomes unstable. The present invention is a power supply wiring method in which AVcc and AGnd on a printed circuit board (PCB) suppress the influence of external noise and reduce clock jitter.
デジタル電源とアナログ電源を分離するために、フェライトビーズ、コンデンサ、抵抗などの素子から構成されるフィルタ回路が使用される。また、PCBのパターン設計では、アナログ系の電源プレーンとデジタル系との間に間隙を設け、ノイズが回り込まない配線手法を適用する。また、LSIメーカなどのPCB 設計ガイドでは、フィルタ回路素子はなるべくLSI の近くに配置、短くて太い電源配線が推奨される。 In order to separate the digital power supply and the analog power supply, a filter circuit composed of elements such as ferrite beads, capacitors, and resistors is used. In PCB pattern design, a wiring method is adopted in which a gap is provided between the analog power plane and the digital system so that noise does not wrap around. Also, PCB design guides from LSI manufacturers recommend that filter circuit elements be placed as close to the LSI as possible, and that short and thick power wiring be used.
一般的にPLLなどのアナログ回路は消費電流が小さいにもかかわらず、LSI メーカ推奨のPCB 設計ガイドに準拠し、必要以上に太いアナログ電源線が採用されてしまう。配線が太くなると、PCB 上の他の高速信号、デジタル系電源からクロストークノイズの影響を受け易い構造になってしまう。また、PCB パターン設計の容易性から、グランド端子はデジタル系とアナログ系を分離しないケースが多い。PCB からLSIに供給されるAVcc と AGndとの電位差で PLL 回路がバイアスされ、ノイズの影響でこの電位差が変動すると、クロック信号でのジッタが増えることになる。 In general, analog circuits such as PLLs use analog power lines that are thicker than necessary in conformity with the PCB manufacturer's recommended PCB design guide, despite the low current consumption. If the wiring becomes thicker, the structure will be more susceptible to the effects of crosstalk noise from other high-speed signals on the PCB and the digital power supply. Also, because of the ease of PCB pattern design, the ground terminal often does not separate the digital and analog systems. When the PLL circuit is biased by the potential difference between AVcc and AGnd supplied from the PCB to the LSI, and this potential difference fluctuates due to noise, jitter in the clock signal will increase.
フィルタ用の回路素子はコンデンサのみで構成し、コンデンサ端子直近における一点のAVcc、AGnd の両電圧をリファレンスにした差動方式の結合電源配線とし、この結合電源配線が PCB の違う層をまたがる際は、ビアを使用するが他層の電源・グランドプレーンと接続されないようクリアランスを設ける。そして、その配線幅と配線長は PLL 回路の消費電流と抵抗成分によって生じるDC電圧ドロップ分をLSI 許容電源電圧に反映させる。 The circuit element for the filter is composed only of a capacitor, and it is a differential power supply wiring that uses both the AVcc and AGnd voltages at one point in the immediate vicinity of the capacitor terminal as a reference. When this power supply wiring crosses different layers on the PCB, Use a via, but provide clearance so that it is not connected to the power / ground plane in other layers. The wiring width and length reflect the DC voltage drop caused by the current consumption and resistance component of the PLL circuit in the LSI allowable power supply voltage.
PCB の制約条件等で、デジタル電源、信号の近くに配線する場合は、クロストークノイズをAC ノイズ量として見積もり数式3を満足するパラメータに決定し、複数の PLL がLSI に搭載され、AVcc、AGnd 端子も複数存在する場合は、電源ペア毎に結合電源配線を適用する。 When wiring near a digital power supply or signal due to PCB constraints, etc., the crosstalk noise is estimated as the AC noise amount and determined as a parameter that satisfies Equation 3, and multiple PLLs are mounted on the LSI, and AVcc, AGnd When there are a plurality of terminals, combined power supply wiring is applied to each power supply pair.
結合電源配線にクロストークノイズが回り込んでも、AVcc、AGnd 間の結合が強く、両方の配線に対して同相ノイズが印加されるため、AVcc と AGnd 間の電位差が変わらず、結果としてノイズが印加されてもPLL 回路へのバイアス電圧は一定となり、ジッタ抑制が図れる。 Even if crosstalk noise wraps around the coupled power supply wiring, coupling between AVcc and AGnd is strong, and common-mode noise is applied to both wirings, so the potential difference between AVcc and AGnd does not change, resulting in noise being applied. Even if this is done, the bias voltage to the PLL circuit is constant, and jitter can be suppressed.
以下、実施の形態に基づき説明する。 Hereinafter, a description will be given based on the embodiment.
表層にコンデンサを実装し、AVccは一点接続の内層電源(Vcc)、コンデンサの電源(Vcc) 端子、結合電源配線、LSIのAVcc端子の順序で接続する。同様にAGndも一点接続の内層グランド(Gnd)、コンデンサのグランド(Gnd) 端子、結合電源配線、LSIのAGnd 端子の順序で接続する。コンデンサの実装と結合電源配線はLSI 実装面と同じ表層でおこない、その直下の層はGnd プレーンで覆う。電源配線間の結合を最大にするため、AVcc と AGndとの間隙はPCB 製造プロセスが許容する最小寸法とする。 Capacitors are mounted on the surface layer, and AVcc is connected in the order of one-point connected inner layer power supply (Vcc), capacitor power supply (Vcc) terminal, coupled power supply wiring, and LSI AVcc terminal. Similarly, AGnd is connected in the order of one-point inner layer ground (Gnd), capacitor ground (Gnd) terminal, coupled power wiring, and LSI AGnd terminal. Capacitor mounting and coupled power supply wiring are performed on the same surface layer as the LSI mounting surface, and the layer immediately below is covered with a Gnd plane. To maximize the coupling between power lines, the gap between AVcc and AGnd should be the smallest dimension allowed by the PCB manufacturing process.
BGA パッケージなどのようにLSI 端子数が増大する場合は、端子への引き出し配線が難しくなるため、図2から図4に示すように表層以外の配線層で結合電源配線を形成する。図2では、内層の電源・グランドとの一点接続、右側の結合配線の他の層に移動させるためにコンデンサの左側にビアを設ける。図3では、左端のビアのみ内層プレーンのVcc、Gndと接続し、他のビアは未接続とする。図4では、右側のビアで結合電源配線を部品面に戻している。これらの場合、差動方式の結合電源配線とノイズ源になる他電源・信号との結合のバランスが崩れると AVcc−AGnd 間の電位差でノイズを完全に制御できなくなる。 When the number of LSI terminals increases as in a BGA package or the like, it becomes difficult to lead out the terminals, so the coupled power supply wiring is formed in a wiring layer other than the surface layer as shown in FIGS. In FIG. 2, a via is provided on the left side of the capacitor in order to move to one layer of the inner layer power supply / ground and to the other layer of the right coupling wiring. In FIG. 3, only the leftmost via is connected to Vcc and Gnd of the inner layer plane, and the other vias are not connected. In FIG. 4, the coupled power supply wiring is returned to the component surface by the right via. In these cases, if the coupling balance between the differential coupled power supply wiring and the other power source / signal that becomes the noise source is lost, the noise cannot be completely controlled by the potential difference between AVcc and AGnd.
結合する容量成分は二つの導体が重なりあう面の面積に比例し、距離に反比例することから、結合係数で評価する。 The capacitive component to be coupled is proportional to the area of the surface where the two conductors overlap, and inversely proportional to the distance.
図5、図6に示した各電源、信号の位置関係、各結合係数を数1、数2のとおりに定義し、数3を満足する各パラメータを算出する。ただし、n はアナログ電源の許容ノイズ電圧変動率であり、DC 成分ndcとAC成分nacの合計になる。 Each power source, signal positional relationship, and each coupling coefficient shown in FIGS. 5 and 6 are defined as in Equations 1 and 2, and parameters satisfying Equation 3 are calculated. However, n is the allowable noise voltage fluctuation rate of the analog power supply, and is the sum of the DC component n dc and the AC component nac .
ここで、L:アナログ電源(AVcc)、アナロググランド(AGnd)の配線長、W:AVcc、AGndの配線幅、S:AVccとAGndとの間隙、t:基板配線層の銅厚、SIG_1、2,3、4:ノイズ源としての信号、L1、2,4:SIG_1、2,4がAVcc、AGndと並走する距離、S1:SIG_1とAGndとの間隙、S2:SIG_2とAGndとがオーバラップする距離、S3:SIG_3とAVccとの間隙、W3:SIG_3がAVccと並走する距離、W4:SIG_2とAGndとがオーバラップする距離、H2:SIG_2とAVcc、AGndとの間の絶縁層厚、H4:SIG_4とAVcc、AGndとの間の絶縁層厚、である。 Where L: analog power supply (AVcc), analog ground (AGnd) wiring length, W: AVcc, AGnd wiring width, S: gap between AVcc and AGnd, t: copper thickness of substrate wiring layer, SIG_1 , 2 , 3, 4: the signal as a noise source, L l, 2,4: SIG_1, distance 2, 4 running parallel AVcc, and AGnd, S 1: SIG _ 1 and the gap between the AGND, S 2: SIG _ distance and 2 and the AGnd is overlap, S 3: the gap between the SIG_3 and AVcc, W 3: distance SIG _ 3 is running in parallel with the AVcc, W 4: SIG _ 2 and the distance and the overlap AGnd, H 2: SIG _ 2 and AVcc, insulating layer thickness between AGnd, H 4: SIG _ 4 and AVcc, insulating layer thickness between AGND, a.
例えば、n = 5% , ndc= 1%の場合、結合電源配線自身の結合係数は、数3から25となり、結合電源配線とノイズ源との不平衡結合係数の合計が25倍以上となるパラメータ設定にする。
1/(n−ndc)=1/(5%−1%)=1/(0.05−0.01)=1/0.04=25
For example, when n = 5% and n dc = 1%, the coupling coefficient of the coupled power supply wiring itself is 3 to 25, and the total unbalanced coupling coefficient between the coupled power supply wiring and the noise source is 25 times or more. Set parameters.
1 / (n−n dc) = 1 / (5% −1%) = 1 / (0.05−0.01) = 1 / 0.04 = 25
次に、表1のLSI の設計仕様、表2のPCB層構成パラメータの場合について具体的なパラメータを設定する。
Next, specific parameters are set for the LSI design specifications in Table 1 and the PCB layer configuration parameters in Table 2.
表層の最下層に結合電源配線をアサインするため、SIG_4は対象外になる。まず、AVcc とAGnd の配線幅(W) を0.2mm、配線長(L)を30mm、間隙(S)を0.1mmに設定する。AVcc−AGndのループ抵抗は数4から0.121Ω、DC電流による電圧降下は0.1A × 0.121 Ω = 12 mV(ndc=1.2%) になり許容ノイズ電圧50mV(n=5%)から12mVを差し引いた38mV(nac=3.8%)がACノイズ成分に割り振られる。 SIG_4 is excluded because the combined power supply wiring is assigned to the lowermost surface layer. First, the wiring width (W) of AVcc and AGnd is set to 0.2 mm, the wiring length (L) is set to 30 mm, and the gap (S) is set to 0.1 mm. The loop resistance of AVcc−AGnd is from 0.14 to 0.121Ω, the voltage drop due to DC current is 0.1A × 0.121Ω = 12 mV (n dc = 1.2%), and 12mV is subtracted from the allowable noise voltage 50mV (n = 5%) 38 mV (n ac = 3.8%) is allocated to the AC noise component.
これより、電源・グランド配線間の結合係数は>26となり、結合電源配線とノイズ源との不平衡結合係数の合計を26倍以上に設定する。
1/(n−ndc)=1/(5%−1.2%)=1/(0.05−0.012)=1/0.038>26
As a result, the coupling coefficient between the power supply and ground wiring is> 26, and the total unbalanced coupling coefficient between the coupled power supply wiring and the noise source is set to 26 times or more.
1 / (n−n dc) = 1 / (5% −1.2%) = 1 / (0.05−0.012) = 1 / 0.038> 26
図5、図6に示す各パラメータを表3のパラメータに設定すると結合係数の比率は5で 数1を満足しないため、結合電源配線でもクロストークノイズが回り込むことになる。SIG_2 はアナログ電源配線の直上の層を並走し、絶縁層厚が0.1mmと薄いためにノイズ結合が大きくなる。そのため、対策として表4のようにアナログ電源とオーバラップしない配線パターンに、ノイズ結合の大きい SIG_1 は間隙を1.0mm から 1.5 mm に広げることでノイズが低減され、結合係数の比率は27となり、数1を満足する。
When the parameters shown in FIGS. 5 and 6 are set to the parameters shown in Table 3, the ratio of the coupling coefficient is 5 and does not satisfy Equation 1, so that the crosstalk noise will also circulate even in the coupled power supply wiring. SIG _ 2 is run in parallel layers immediately above the analog power supply wiring, noise coupling is large because the insulating layer thickness 0.1mm and thinner. Therefore, the analog supply and non-overlapping wiring pattern as shown in Table 4 as a countermeasure, a large SIG _ 1 of the noise coupling noise is reduced by widening the gap from 1.0mm to 1.5 mm, the ratio of coupling coefficients 27 becomes , Satisfying Equation 1.
図7は、従来手法によるAVcc と AGndの電圧波形であり、AGnd は低インピーダンスのためノイズによるグランドの電圧変動は小さいが、AVcc がクロストークノイズの影響を受け易いパターン設計になっており(a)、AVcc − AGnd 間の電位差、AVcc の電圧波形に近くなる(b)。 Fig. 7 shows the voltage waveforms of AVcc and AGnd according to the conventional method. AGnd has a low impedance, so ground voltage fluctuation due to noise is small, but AVcc is designed to be easily affected by crosstalk noise (a ), The potential difference between AVcc and AGnd, which is close to the voltage waveform of AVcc (b).
図8は、本発明の手法によるAVcc と AGndの電圧波形で、AGnd もAVcc とほぼ同相に近い電圧波形となり(a)、ノイズは打ち消しあい、AVcc − AGndの電位差は安定する(b)。 FIG. 8 is a voltage waveform of AVcc and AGnd according to the method of the present invention. AGnd also has a voltage waveform almost in phase with AVcc (a), noise cancels out, and the potential difference of AVcc-AGnd is stabilized (b).
図9に示すように、LSI は未実装で125MHzのノイズを印加した場合のアナログ電源電圧の実測波形は、従来手法では電圧は60mVで揺らぐのに対し、本発明の手法によれば、29mVであり、従来手法に対して電源ノイズが低減されている。 As shown in FIG. 9, the measured waveform of the analog power supply voltage when the LSI is not mounted and a noise of 125 MHz is applied, the voltage fluctuates at 60 mV in the conventional method, whereas according to the method of the present invention, the voltage is 29 mV. Yes, power supply noise is reduced compared to the conventional method.
また、LSI を実装しPLL回路を50MHz で動作させてノイズを印加した場合も 図10の実測波形に示すとおり、従来手法では電圧は501mVで揺らぐのに対し、本発明の手法によれば、145mVであり、従来手法に対して電源ノイズが低減されている。 Also, when the LSI is mounted and the PLL circuit is operated at 50 MHz and noise is applied, the voltage fluctuates at 501 mV in the conventional method as shown in the measured waveform in FIG. 10, whereas according to the method of the present invention, the voltage is 145 mV. Thus, the power supply noise is reduced as compared with the conventional method.
最終的には電磁界シミュレータを使用して正確な結合パラメータを算出し、PCBパターン設計に反映させる。 Finally, an accurate coupling parameter is calculated using an electromagnetic simulator and reflected in the PCB pattern design.
このように、フィルタ用の回路素子をコンデンサのみで構成し、コンデンサ端子直近における一点のAVcc、AGnd の両電圧をリファレンスにした差動方式の結合電源配線とすることにより、AVcc と AGnd 間の電位差が変わらず、結果としてノイズが印加されてもPLL 回路へのバイアス電圧は一定となり、ジッタが低減される。 In this way, the circuit element for the filter is composed only of a capacitor, and the potential difference between AVcc and AGnd is established by using a differential coupled power supply wiring with the AVcc and AGnd voltages at one point in the immediate vicinity of the capacitor terminal as a reference. As a result, even if noise is applied, the bias voltage to the PLL circuit is constant, and jitter is reduced.
U1:半導体パッケージ基板
AVcc1、AVcc2:アナログ電源
AGnd1、AGnd2:アナロググランド
Vcc:電源
Gnd:グランド
C1、C2、C3、C4、C5、C6:コンデンサ
SIG:信号
SIG_1、SIG_2、SIG_3、SIG_4:ノイズ源としての信号
W:AVcc、AGndの配線幅
L::AVcc、AGndの配線長
S :AVccとAGndとの間隙
t :基板配線層の銅厚
L1:SIG_1がAVcc、AGndと並走する距離
L2:SIG_2がAVcc、AGndと並走する距離
L4:SIG_4がAVcc、AGndと並走する距離
S1:SIG_1とAGndとの間隙
S2:SIG_2とAGndとがオーバラップする距離
S3:SIG_3とAVccとの間隙
W3:SIG_3がAVccと並走する距離
W4:SIG_4とAGndとがオーバラップする距離
H2:SIG_2とAVcc、AGndとの間の絶縁層厚
H4:SIG_4とAVcc、AGndとの間の絶縁層厚
U1: Semiconductor package substrate
AVcc1, AVcc2: Analog power supply
AGnd1, AGnd2: Analog ground
Vcc: Power supply
Gnd: Grand
C1, C2, C3, C4, C5, C6: Capacitors
SIG: Signal
SIG _ 1, SIG _ 2, SIG _ 3, SIG _ 4: signal sources of noise
W: AVcc, AGnd wiring width
L :: AVcc, AGnd wiring length
S: Gap between AVcc and AGnd
t: Copper thickness of substrate wiring layer
L 1: distance SIG _ 1 is running in parallel AVcc, and AGnd
L 2 : Distance that SIG_2 runs parallel to AVcc and AGnd
L 4 : Distance that SIG_4 runs parallel to AVcc and AGnd
S 1: the gap between the SIG _ 1 and AGnd
S 2 : Distance where SIG_2 and AGnd overlap
S 3: the gap between the SIG _ 3 and AVcc
W 3: distance SIG _ 3 is running in parallel with the AVcc
W 4 : Distance where SIG_4 and AGnd overlap
H 2 : Insulating layer thickness between SIG_2 and AVcc, AGnd
H 4: SIG _ 4 and AVcc, insulating layer thickness between AGnd
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106231783A (en) * | 2016-08-12 | 2016-12-14 | 深圳崇达多层线路板有限公司 | A kind of printed circuit board reducing inter-signal interference and wiring method |
| KR20180088786A (en) | 2015-11-30 | 2018-08-07 | 르네사스 일렉트로닉스 가부시키가이샤 | Electronic device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| KR20180088786A (en) | 2015-11-30 | 2018-08-07 | 르네사스 일렉트로닉스 가부시키가이샤 | Electronic device |
| US10638600B2 (en) | 2015-11-30 | 2020-04-28 | Renesas Electronics Corporation | Electronic device |
| CN106231783A (en) * | 2016-08-12 | 2016-12-14 | 深圳崇达多层线路板有限公司 | A kind of printed circuit board reducing inter-signal interference and wiring method |
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