JP2013223164A - Imaging module - Google Patents

Abstract

An imaging module capable of ensuring a desired light collection efficiency and improving heat dissipation efficiency.
A solid-state image sensor chip 20 that photoelectrically converts received light, a wiring board 30 on which the solid-state image sensor chip 20 is mounted, a lens 10a disposed on the light-receiving surface side of the solid-state image sensor chip 20, and wiring A lens frame 10 that is held by the substrate 30 and holds the lens 10 a, and at least a side surface of the solid-state imaging device chip 20, a thermal conductive resin 40 that is connected to the lens frame 10 and the wiring substrate 30 are provided.
[Selection] Figure 1

Description

  The present invention relates to an imaging module capable of outputting an electrical signal after photoelectric conversion from a plurality of pixels for imaging as image information.

  2. Description of the Related Art In recent years, high-definition and high frame rates have been advanced in moving image shooting in an imaging apparatus such as a video camera. The imaging module included in the imaging apparatus includes, for example, a lens frame that holds a light-transmitting lens and a plurality of pixels for imaging, and the electrical signals that are received by the pixels through the lens and subjected to photoelectric conversion processing Is output as a video signal, and a wiring board that holds a mirror frame and mounts the solid-state image sensor chip. In an imaging module, a solid-state imaging device chip is packaged by a lens frame that holds a lens and a wiring board. Moreover, it may replace with a lens and the cover glass which covers a solid-state image sensor chip | tip may be used. In this case, the cover glass is held by the cover glass holder.

  Here, the solid-state imaging device chip is provided with a plurality of microlenses on a light receiving surface that receives light, and the sensitivity of the imaging device is improved by condensing the light by the microlenses. In addition, in the imaging module, instead of the space between the solid-state imaging device chip and the lens and the cover glass holder that holds the cover glass, the top surface of the microlens is covered with a transparent resin or the like to package the solid-state imaging device chip. (For example, refer to Patent Document 1). By packaging the solid-state imaging device chip with a transparent resin or the like, the imaging module can be reduced in weight.

  By the way, in recent years, a solid-state imaging device chip in an imaging module has processed an A / D converter that performs A / D conversion processing on a signal, and a digital signal that has been A / D converted by the A / D converter. The digital signal processing unit for applying the above is also provided, and the amount of heat generated by the solid-state imaging device chip is increased as the degree of integration increases. Since the noise increases due to the heat noise due to the heat generation and the image quality of the acquired image is lowered, higher heat dissipation performance is required for the solid-state imaging device chip from the viewpoint of suppressing the noise.

  On the other hand, as a technique for efficiently radiating heat generated in an imaging module or the like, for example, a metal body (solder) is disposed on the back surface of the semiconductor chip, and the heat generated in the semiconductor chip is directly heated by the metal body. A technique for conducting and dissipating heat is disclosed (for example, see Patent Document 2).

JP-A-5-206430 JP 2006-324540 A

  However, in the technique disclosed in Patent Literature 1, the difference in refractive index between the microlens arrays cannot be ensured by the transparent resin, the light collection efficiency is reduced, and the amount of light received by the light receiving unit of the solid-state imaging device chip is reduced. There was a drawback of end.

  The technique disclosed in Patent Document 2 is for transferring heat between an imaging module and a substrate holding the imaging module, and actively generates heat generated by the solid-state imaging device chip in the imaging module. However, the heat dissipation inside the imaging module was not taken into consideration.

  The present invention has been made in view of the above, and it is an object of the present invention to provide an imaging module capable of ensuring desired light collection efficiency and realizing efficient heat dissipation.

  In order to solve the above-described problems and achieve the object, an imaging module according to the present invention includes a solid-state imaging device chip that photoelectrically converts received light, a substrate on which the solid-state imaging device chip is mounted, and the solid-state imaging A light transmitting member disposed on the light receiving surface side of the element chip, a lens frame that is held by the substrate and holds the light transmitting member, and at least a side surface of the solid-state imaging element chip, the lens frame, and the substrate And a thermally conductive member in contact therewith.

  In the imaging module according to the present invention, in the above invention, the thermally conductive member is a thermally conductive resin, and the thermally conductive resin includes a side surface of the solid-state imaging element chip and a wall surface of the lens frame. It is filled with between.

  In the imaging module according to the present invention, in the above invention, the substrate further includes an electronic element or a conductive member on a mounting surface of the solid-state imaging element chip, and the thermally conductive resin is the electronic element or The conductive member is embedded.

  Moreover, the imaging module according to the present invention is characterized in that, in the above invention, the thickness of the thermal conductive member is larger than the thickness of the solid-state imaging device chip.

  In the imaging module according to the present invention, in the above invention, the solid-state imaging element chip has a substantially plate shape, and the solid-state imaging element chip has a thickness direction outside the effective pixel area of the solid-state imaging element chip. It has the wall structure extended in this.

  In the imaging module according to the present invention, in the above invention, the wall structure is configured such that a member formed separately from the solid-state imaging element chip is disposed on a light receiving surface of the solid-state imaging element chip. It is characterized by.

  The imaging module according to the present invention is characterized in that, in the above invention, the wall structure is one in which a polymer material that is cured by heat, air, or ultraviolet rays is disposed on the upper surface of the solid-state imaging device chip. To do.

  In the imaging module according to the present invention, the wall structure is formed in a process of manufacturing the solid-state imaging device chip.

  In the imaging module according to the present invention as set forth in the invention described above, the wall structure has an inclined surface inclined outward from a surface on which the effective pixel region of the solid-state imaging device chip is formed.

  In the imaging module according to the present invention as set forth in the invention described above, the thermal conductive member has light-opacity.

  The imaging module according to the present invention is characterized in that, in the above invention, the thermally conductive member blocks an opening of a through hole formed in the substrate.

  In the imaging module according to the present invention as set forth in the invention described above, the thermal conductive member is in contact with a region excluding an effective pixel region on a light receiving surface of the solid-state imaging device chip.

  The imaging module according to the present invention further includes a heat transfer member in contact with the heat conductive member in the above invention, and a space is formed by the substrate, the light transmission member, the lens frame, and the heat transfer member. The heat transfer member is formed and extends outward from the space.

  The imaging module according to the present invention further includes a heat transfer member that contacts the side surface of the lens frame outside the space formed by the substrate, the light transmission member, and the lens frame in the above invention. Features.

  Further, in the imaging module according to the present invention, in the above invention, the solid-state imaging device chip has a laminated structure in which a photoelectric conversion element portion and a peripheral circuit portion are laminated, and the thermal conductive member is the solid-state element. It is in contact with the peripheral circuit portion of the imaging element chip.

  The imaging module according to the present invention includes a solid-state imaging device chip that performs photoelectric conversion processing on received light, a substrate on which the solid-state imaging device chip is mounted, a holding member that is held by the substrate, and held by the holding member. And a cover glass that is disposed on the light receiving surface of the solid-state image sensor chip and transmits light, at least a side surface of the solid-state image sensor chip, a heat conductive member connected to the holding member and the substrate, and the substrate And a lens frame that holds the lens and encloses the solid-state imaging chip, the holding member, and the cover glass in an internal space formed by the substrate and the lens. And

  According to the present invention, in the imaging module, a heat conductive resin is disposed between the solid-state image sensor chip, the lens frame, and the substrate, and the heat generated in the solid-state image sensor chip is passed through the heat conductive resin. Since the heat is transmitted to the lens frame or the substrate and radiated to the outside, the desired condensing efficiency can be ensured and the efficiency of heat radiation can be improved.

FIG. 1 is a schematic diagram illustrating a schematic configuration of the imaging module according to the first embodiment of the present invention. FIG. 2 is a schematic diagram illustrating a configuration of an imaging module according to Modification 1-1 of Embodiment 1 of the present invention. FIG. 3 is a schematic diagram illustrating a configuration of an imaging module according to Modification 1-2 of Embodiment 1 of the present invention. FIG. 4 is a schematic diagram illustrating a configuration of an imaging module according to Modification 1-3 of Embodiment 1 of the present invention. FIG. 5 is a schematic diagram illustrating a schematic configuration of the imaging module according to the second embodiment of the present invention. FIG. 6 is a schematic diagram illustrating a method for manufacturing the imaging module according to the second embodiment of the present invention. FIG. 7 is a schematic diagram illustrating a configuration of an imaging module according to Modification 2-1 of Embodiment 2 of the present invention. FIG. 8 is a schematic diagram illustrating a configuration of an imaging module according to Modification 2-2 of Embodiment 2 of the present invention. FIG. 9 is a schematic diagram illustrating a configuration of a main part of an imaging module according to Modification 2-3 of Embodiment 2 of the present invention. FIG. 10 is a schematic diagram illustrating a configuration of a main part of the imaging module corresponding to the cross section taken along the line AA in FIG. 9. FIG. 11 is a schematic diagram illustrating a configuration of an imaging module according to Modification 2-4 of Embodiment 2 of the present invention. FIG. 12 is a schematic diagram illustrating a configuration of an imaging module according to the third embodiment of the present invention. FIG. 13 is a schematic diagram illustrating a configuration of an imaging module according to the fourth embodiment of the present invention.

  Hereinafter, as an embodiment for implementing the present invention (hereinafter referred to as “embodiment”), an imaging module capable of outputting an electrical signal after photoelectric conversion from a plurality of imaging pixels as image information will be described. Moreover, this invention is not limited by this embodiment. Furthermore, the same code | symbol is attached | subjected to the same part in description of drawing. Furthermore, the drawings are schematic, and it should be noted that the relationship between the thickness and width of each member, the ratio of each member, and the like are different from the actual ones. Moreover, the part from which a mutual dimension and ratio differ also in between drawings.

(Embodiment 1)
FIG. 1 is a schematic diagram illustrating a schematic configuration of the imaging module 1 according to the first embodiment. As shown in FIG. 1, the imaging module 1 includes a lens frame 10 that holds a lens 10a (light transmission member) and a plurality of pixels for imaging, and each pixel outputs a signal after photoelectric conversion processing. A solid-state image sensor chip 20 that outputs signals and a solid-state image sensor chip 20 mounted thereon, and a wiring board 30 that electrically connects the solid-state image sensor chip 20 and an external circuit, at least higher than air Thermally conductive resin 40 (thermally conductive member) having thermal conductivity.

  Here, the imaging module 1 has a structure in which the solid-state imaging device chip 20 is inserted into and joined to an internal space formed by the lens frame 10 and the wiring board 30. The solid-state imaging device chip 20 is provided so that the light receiving surface side faces the lens 10a side.

  The solid-state image sensor chip 20 has a substantially plate shape, photoelectrically converts light from the optical system, and outputs a signal as a video signal. Specifically, the solid-state imaging device chip 20 is a light receiving device in which a plurality of pixels each having a photodiode that accumulates electric charge according to the amount of light and an amplifier that amplifies the electric charge accumulated by the photodiode are arranged in a two-dimensional matrix. And a photoelectric conversion unit having a vertical scanning circuit, and a digital signal processing unit that performs analog / digital conversion (A / D conversion circuit) on a signal output from the photoelectric conversion unit and performs predetermined signal processing.

  The solid-state imaging device chip 20 has a microlens ML that is provided on the pixel on the light receiving side surface and collects external light. Among the pixels arranged in the light receiving unit, pixels used for actual imaging are effective pixels, provided around the effective pixels, for noise correction, and when the light-shielded pixels are light-shielded pixels, An area where the effective pixels are arranged is an effective pixel area Re, and an area where the light shielding pixels are arranged is an optical black area OB. The microlens ML is provided at least on the pixels in the effective pixel region Re.

  The wiring board 30 has a substantially plate shape, mounts at least the solid-state imaging element chip 20, and holds the lens frame 10. Further, a capacitor (electronic element) and a bonding pad (not shown) for inputting / outputting signals to / from the solid-state imaging device chip 20 are provided on the surface of the wiring board 30. Further, the wiring board 30 may be provided with an I / F connector which is an interface for performing communication with the outside of the imaging module 1. At this time, the wiring board 30 is electrically connected to the solid-state imaging device chip 20 by wires W1 and W2 (conductive members) connected to the bonding pads described above.

  The thermally conductive resin 40 is an internal space formed by the lens frame 10, the solid-state image sensor chip 20, and the wiring substrate 30, and is provided in a substantially annular shape by filling the space on the side surface side of the solid-state image sensor chip 20. The lens frame 10, the solid-state imaging device chip 20, and the wiring substrate 30 are in contact with each other. The thermally conductive resin 40 transmits heat generated in the solid-state imaging device chip 20 to the lens frame 10 or the wiring board 30 side. Examples of the heat conductive resin 40 include a resin obtained by adding a diamond filler to an insulating resin. The thermal conductive resin 40 preferably has an insulating property and a thermal conductivity of 8 W / mK or more. Examples of the insulating resin include silicon resin, epoxy resin, and urethane resin. Specific examples of the thermally conductive resin 40 include TCA4105 (manufactured by Cima Electronics Co., Ltd.) and Zima Inus (manufactured by Sumitomo Osaka Cement Co., Ltd.).

  At this time, the heat conductive resin 40 absorbs the heat generated in the solid-state image sensor chip 20 and transmits it to the lens frame 10 side. The lens frame 10 releases the heat transmitted from the heat conductive resin 40 to the outside. It is also possible to adjust the transmission path by adjusting the addition position of the diamond filler in the heat conductive resin 40. In consideration of the influence on the light reception of the solid-state image pickup device chip 20, the heat conductive resin 40 is preferably light-shielding (light opaque), for example, black. Thereby, it is possible to prevent the light other than the light received by the solid-state imaging device chip 20 from entering the lens frame 10 through a through-hole TH1 (through hole) described later. At this time, the thermally conductive resin 40 closes the opening of the through hole TH1.

  In addition, the wiring board 30 is provided with a plurality of through holes TH1 which are provided according to the arrangement positions of the heat conductive resin 40 and are through holes penetrating in the plate thickness direction. Thereby, the heat transferred from the solid-state image sensor chip 20 by the heat conductive resin 40 is radiated to the outside through the through hole TH1 or the wiring board 30.

  Here, a space region formed of an air layer is formed between the lens 10a and the solid-state imaging device chip 20 (light receiving unit). Thereby, compared with the case where it receives through a transparent resin, the condensing efficiency which the micro lens ML condenses can be ensured as a high level thing.

  According to the first embodiment described above, in the imaging module, a heat conductive resin is disposed between the solid-state imaging device chip and the lens frame so that the heat generated in the solid-state imaging device chip is transferred to the heat. Since heat is transmitted to the lens frame via the heat-resistant resin and radiated to the outside, desired light collection efficiency can be ensured and heat radiation efficiency can be improved.

  FIG. 2 is a schematic diagram illustrating a configuration of the imaging module 1a according to the modified example 1-1 of the first embodiment. In the first embodiment described above, the heat generated in the solid-state imaging device chip 20 has been described as being transmitted to the lens frame 10 and the wiring board 30 by the heat conductive resin 40 and radiated to the outside. A heat dissipating member 41 is provided on a surface opposite to the mounting surface of the solid-state imaging device chip 20 (external side) of the wiring substrate 30a having the same shape, and the heat of the wiring substrate 30a is released from the heat dissipating member 41. Also good.

  The heat radiating member 41 radiates the heat generated in the solid-state image sensor chip 20 to the outside via the wiring board 30a. The heat dissipation member 41 is a plate-like member made of a metal material. The metal material is applicable as long as it has a higher thermal conductivity than the material constituting the wiring board 30a.

  At this time, in the wiring board 30a, in addition to the through hole TH1 provided at a position corresponding to the arrangement position of the above-described heat conductive resin 40, a through hole penetrating in the thickness direction at the arrangement position of the heat radiation member 41 is provided. TH2 is provided. The through hole TH2 can improve the thermal efficiency between the solid-state image sensor chip 20 and the wiring board 30a.

  In addition, it is preferable that a heat conductive paste is disposed between the wiring board 30a and the heat dissipation member 41, and the both are fixed by the heat conductive paste. The heat conductive paste can be applied as long as it is a metal or resin having a higher thermal conductivity than the material constituting the wiring substrate 30a, or a resin containing a metal powder having a higher thermal conductivity.

  Here, in recent years, the circuit interval on the solid-state imaging device chip 20 has been narrowed due to the market demand for miniaturization of the device in which the imaging module 1 is incorporated and the miniaturization of the semiconductor, and the photoelectric conversion unit and the photoelectric conversion unit described above are reduced. The distance of the boundary region with the digital signal processing unit including the A / D conversion circuit that converts the analog signal from the digital signal into a digital signal is also becoming very small. For this reason, it becomes more difficult to increase the accuracy of the assembly processing of the imaging module 1, and it is also necessary to separate the heat dissipation path and avoid a thermal short circuit. When a short circuit occurs, heat is transferred from the digital signal processing unit having a relatively large amount of heat generation (a heat generation amount per unit time) to the photoelectric conversion unit as compared with the photoelectric conversion unit. For this reason, the temperature on the digital signal processing unit side of the photoelectric conversion unit of the solid-state imaging device chip 20 is increased, and the image quality is deteriorated due to thermal noise in the pixels on the digital signal processing unit side in the arranged pixels. The screen area (pixel area) that can be used in the above becomes smaller. In order to solve the above-described problem, a configuration is desired in which the heat of the digital signal processing unit is not transferred to the photoelectric conversion unit.

  With respect to this problem, in the configuration of the first embodiment and the modified example 1-1 described above, the thickness of the heat conductive resin 40 or the heat radiation member 41 on the side surface closer to the digital signal processing unit of the solid-state imaging device chip 20 is set. It is possible to cope with this by increasing the thickness.

  FIG. 3 is a schematic diagram illustrating a configuration of an imaging module 1b according to Modification 1-2 of the first embodiment. In the first embodiment described above, the solid-state imaging device chip 20 has been described as a single component. However, the photoelectric conversion unit and the digital signal processing unit are separated as separate components, and a stacked structure in which these components are stacked. A certain solid-state image sensor chip 20a may be used.

  The solid-state imaging device chip 20a has a substantially rectangular first member 20b (photoelectric conversion element portion) having a photoelectric conversion unit, and a second member 20c (peripheral circuit unit) having a substantially rectangular shape and having a digital signal processing unit. The first member 20b and the second member 20c are laminated. The solid-state imaging device chip 20a is mounted on the wiring board 30 described above so that the light receiving surface side of the first member 20b is exposed to the outside. The first member 20b and the second member 20c are electrically connected by, for example, solder or the like, and fixed by a fixing member (not shown) such as a resin (adhesive).

  At this time, the heat conductive resin 42 that is an internal space formed by the lens frame 10, the solid-state image sensor chip 20 a, and the wiring substrate 30 and that is filled in the space on the side surface side of the solid-state image sensor chip 20 is at least relatively. It is provided so as to cover and contact the side surface of the second member 20c that generates a large amount of heat. Thereby, since the heat generated in the second member 20c can be transmitted to the outside (the lens frame 10 and the wiring board 30 side) instead of the first member 20b side, to the first member 20b (photoelectric conversion unit). It is possible to suppress image heat transfer, reduce thermal noise, and perform image acquisition while maintaining high quality.

  In other words, according to the above-described modified example 1-2, the photoelectric conversion unit and the analog signal are obtained with respect to the solid-state imaging device chip 20a that is highly integrated and multi-functionalized and generates a large amount of heat by the heat conductive resin 42. By separating the temperature at the processing unit from the part where the heat generation amount is larger and suppressing the wraparound of heat to reduce the dark current, a high-quality image with less noise can be obtained.

  FIG. 4 is a schematic diagram illustrating a configuration of an imaging module 1c according to Modification 1-3 of the first embodiment. In the first embodiment described above, it is described that the space between the lens 10a and the solid-state image sensor chip 20 is an air layer. However, the image is obtained by disposing the cover glass 10b between the lens 10a and the solid-state image sensor chip 20. The module 1c may be used.

  According to Modification 1-3 described above, in addition to the effects according to the first embodiment described above, even when external damage due to damage to the lens 10a occurs and the fragments of the lens 10a are scattered, the cover is covered. Damage to the solid-state image sensor chip 20 can be prevented by the glass 10b.

(Embodiment 2)
FIG. 5 is a schematic diagram illustrating a schematic configuration of the imaging module 2 according to the second embodiment. In addition, the same code | symbol is attached | subjected to the component same as the structure demonstrated in FIG. In the first embodiment described above, it has been described that the heat conductive resin 40 is provided so as to cover a part of the side surface of the solid-state imaging element chip 20, but in the imaging module 2 according to the second embodiment, the solid-state imaging is performed. In the following description, it is assumed that an inflow preventing member 51 (wall structure) is provided on the element chip 20 and a thermally conductive resin is disposed on the outer edge side of the upper surface of the solid-state imaging element chip 20.

  The inflow prevention member 51 has a substantially cylindrical shape, and is an area other than the effective pixel area Re of the solid-state image sensor chip 20 (optical black area OB in the second embodiment). It is provided so as to surround the effective pixel region Re. At this time, the inflow preventing member 51 extends in the plate thickness direction of the solid-state imaging element chip 20. The inflow preventing member 51 is fixed to the solid-state image sensor chip 20 with an adhesive, or is formed when the microlens ML is formed. When fixing with an adhesive, the adhesive is applied to the opposing surfaces of the solid-state imaging element chip 20 and the inflow prevention member 51, or the inflow prevention member 51 placed on the solid-state imaging element chip 20 An adhesive is disposed on the side surface near the contact location.

  Here, the inflow preventing member 51 is preferably black or the like so that at least the outer surface does not reflect light. Since the outer surface of the inflow preventing member 51 has a light shielding property, it is possible to prevent the light reflected from the inflow preventing member 51 from affecting the light reception of the solid-state imaging device chip 20.

  FIG. 6 is a schematic diagram illustrating a method of manufacturing the imaging module according to the second embodiment, and is a diagram for explaining an arrangement method when the inflow preventing member 51 is arranged with respect to the solid-state imaging element chip 20. is there. FIG. 6 illustrates a case where the inflow prevention member 51 is also formed when the microlens ML is formed (when the image sensor is manufactured). First, the lens material 500 used for the microlens ML is formed on the light receiving surface side of the solid-state imaging device chip 20 (FIG. 6A). Thereafter, the lens material 500 is subjected to photolithography (exposure) and etching to form a base 501 serving as a core of the inflow preventing member 51 (FIG. 6B).

  After the base portion 501 is formed, the lens material 510 is formed again on the solid-state imaging device chip 20 and the base portion 501 (FIG. 6C). Thereafter, the lens material 510 is subjected to photolithography (exposure) and etching to form a covering portion 510a that covers the base portion 501 and a lens processing portion 510b that is the basis of the microlens ML (FIG. 6D). .

  After the formation of the covering portion 510a and the lens processing portion 510b, the microlens ML is formed by heat treatment. In addition, the covering portion 510a is also deformed by the heat treatment to form a post-processing covering portion 510c. At this time, the base portion 501 and the post-treatment covering portion 510c form the inflow preventing member 51 (FIG. 6E).

  The lens materials 501 and 510 described above may be of the same type or different types. At this time, the lens material 510 is a material for forming the microlens ML. Further, as described above, the inflow prevention member 51 may be formed in the process of manufacturing the solid-state image sensor chip 20, or a member formed separately from the manufacture of the solid-state image sensor chip 20 is a solid. It may be arranged on the light receiving surface side of the imaging element chip 20.

  Moreover, it is preferable that the inflow preventing member 51 including the base portion 501 and the post-treatment covering portion 510c is covered with a black paint or resin.

  When the heat-conductive resin 43 is poured from the side surface side of the solid-state image sensor chip 20 and solidified by the inflow preventing member 51 formed as described above, the heat-conductive resin 43 reaches a position higher than the upper surface of the solid-state image sensor chip 20. Even in the case of flowing in, the heat conductive resin 43 does not flow into the effective pixel region Re. Here, the thickness of the disposed heat conductive resin 43 is thicker than the thickness of the solid-state imaging element chip 20. As a result, the heat conductive resin 43 can be disposed up to the upper surface side of the solid-state image sensor chip 20, and can be in contact with the area of the solid-state image sensor chip 20 except for the effective pixel area, which is more efficient. It is possible to realize good heat transfer.

  According to the second embodiment described above, similarly to the first embodiment described above, in the imaging module, a thermally conductive resin is disposed between the solid-state imaging device chip and the lens frame, so that the solid-state imaging device. Since the heat generated in the chip is transmitted to the lens frame via the heat conductive resin and radiated to the outside, desired light collection efficiency can be ensured and heat radiation efficiency can be improved.

  Further, according to the second embodiment, the heat conductive resin 43 embeds the capacitors on the wiring board 30 and the wires W1 and W2 and fixes the wires W1 and W2 with the heat conductive resin 43. Therefore, the wires W1 and W2 are not disconnected by vibration generated in the imaging module 2, and a stable connection state between the solid-state imaging element chip 20 and the wiring board 30 can be maintained.

  FIG. 7 is a schematic diagram illustrating a configuration of the imaging module 2a according to the modified example 2-1 of the second embodiment. In the second embodiment described above, the cylindrical inflow preventing member 51 has been described as extending in a direction orthogonal to the main surface of the solid-state imaging device chip 20, but light incident from the lens 10a, particularly In order to reliably receive light incident on the effective pixel region Re from the outside of the effective pixel region Re in the effective pixel region Re, an internal space whose diameter is increased from the solid-state image sensor chip 20 side toward the cover glass 10a side is formed. A cylindrical inflow prevention member 52 may be used.

  As described above, the inflow prevention member 52 is an internal space whose diameter is increased from the solid-state image sensor chip 20 side toward the lens 10a side, and the inner diameter of the end portion on the solid-state image sensor chip 20 side is the effective pixel region Re. Bigger than. Thereby, the inflow prevention member 52 has an inclined surface inclined toward the outer side (the lens 10a side) from the effective pixel region Re forming surface of the solid-state imaging element chip 20.

  When the thermal conductive resin 44 is poured from the side surface side of the solid-state image sensor chip 20 and solidified by the inflow prevention member 52 described above, the thermal conductive resin 44 is caused to flow to a position higher than the upper surface of the solid-state image sensor chip 20. Even so, the thermal conductive resin 44 does not flow into the effective pixel region Re. In addition, the receivable range of light incident on the solid-state image sensor chip 20 from the lens 10a can be further increased. Thereby, the heat conductive resin 44 can be arrange | positioned to the upper surface side of the solid-state image sensor chip | tip 20, and a more efficient heat transfer and light-receiving process can be implement | achieved.

  FIG. 8 is a schematic diagram illustrating a configuration of an imaging module 2b according to Modification 2-2 of the second embodiment. In Modification 2-2, instead of the inflow preventing member 51 of the second embodiment described above, an inflow preventing member 53 having a higher viscosity than the heat conductive resin 45 to be disposed is used.

  The inflow preventing member 53 is made of, for example, a resin having higher viscosity than the heat conductive resin 45. The inflow preventing member 53 includes a polymer material that is cured by heat, air, or ultraviolet rays as a resin to be used. This prevents the heat conductive resin 45 from flowing into the effective pixel region Re even when the height of the solid-state imaging device chip 20 is exceeded when the heat conductive resin 45 before solidification is poured. Can do.

  FIG. 9 is a schematic diagram illustrating a configuration of a main part of an imaging module according to Modification 2-3 of the second embodiment. FIG. 10 is a schematic diagram illustrating a configuration of a main part of the imaging module 2c corresponding to the cross section taken along the line AA of FIG. In Embodiment 2 described above, the heat conductive resin 43 has been described as dissipating the heat generated in the solid-state imaging element chip 20, but a heat dissipating member 46 (heat transfer member) is further provided, The heat radiating member 46 may radiate heat to the outside.

  The heat radiating member 46 is a substantially plate-like member formed by forming a predetermined pattern on the mounting surface of the solid-state imaging device chip 20 of the wiring board 30. The heat radiating member 46 is formed using a material having high thermal conductivity such as metal. The wires W1 to W4 are connected to the bonding pad BP formed on the wiring substrate 30 and the input / output pad IP provided on the solid-state imaging device chip 20 at both ends. Moreover, it is preferable that the bonding pad BP is provided at a location different from the formation region of the through hole TH1 described above.

  The formation pattern of the heat radiating member 46 is formed on the wiring substrate 30 excluding the formation region of the bonding pad BP that is electrically connected to the wire W <b> 2 or the like, and the outer peripheral shape is preferably larger than the outer peripheral shape of the lens frame 10. Thereby, the heat radiating member 46 can be extended from the inside of the lens frame 10 to the outside. Further, the heat radiating member 46 is also provided in a region different from the region where the wires W1 to W4 and the input / output pad IP are disposed, for example, in a corner portion of the solid-state image sensor chip 20.

  The heat dissipating member 46 described above is disposed on the wiring board 30 and the lens frame 10 is placed on the opposite surface. At this time, the heat radiating member 46 and the lens frame 10 are fixed by an adhesive or the like. Further, the heat radiating member 46 is in contact with the heat conductive resin 47 and extends from the inside to the outside in the space formed by the lens frame 10, the lens 10 a, the wiring substrate 30 and the heat radiating member 46. As described above, the thermal conductive resin 47 is disposed on a part of the upper surface from the side surface of the solid-state imaging device chip 20.

  According to the modified example 2-3 described above, as in the above-described second embodiment, in the solid-state imaging device, the heat conductive resin is disposed between the imaging device and the lens frame, and thus generated in the imaging device. Since the heat transmitted to the lens frame via the heat conductive resin is radiated to the outside, the desired light collection efficiency can be ensured and the heat radiation can be made more efficient. Further, by providing a heat radiating member extending from the inside of the lens frame to the outside, it is possible to further improve the efficiency of heat radiation. In addition, although this modification 2-3 demonstrated as what has the inflow prevention member 51, even if it is the structure which does not have the inflow prevention member 51 like Embodiment 1, it is applicable.

  FIG. 11 is a schematic diagram illustrating a configuration of an imaging module 2d according to Modification 2-4 of the second embodiment. In the modified example 2-3 described above, the heat radiating member 46 is described as extending from the inside of the lens frame 10 to the outside. However, instead of the heat radiating member 46, the heat radiating member 46 is provided on the outer periphery of the lens frame 10 of the second embodiment. The heat dissipation member 48 (heat transfer member) to be used may be used.

  The heat radiating member 48 has a plate shape and is disposed so as to abut on the outer peripheral side surface of the lens frame 10 and the outer side surface of the circuit board 10 of the wiring board 30. Thereby, the heat transmitted to the lens frame 10 and the wiring board 30 by the heat conductive resin 43 described above can be efficiently radiated to the outside by the heat radiating member 48.

  In addition, the thermally conductive resins 42 to 45 and 47 described above are the same as the materials cited as the thermally conductive resin 40 according to the first embodiment.

(Embodiment 3)
FIG. 12 is a schematic diagram illustrating a configuration of an imaging module according to the third embodiment of the present invention. In addition, the same code | symbol is attached | subjected to the component same as the structure demonstrated in FIG. In the third embodiment, description will be made assuming that the solid-state image sensor chip 20 is applied to the solid-state image sensor 3 as an imaging module.

  The solid-state imaging device 3 is mounted with the cover glass holder 11 (mirror frame or holding member) that holds the cover glass 11a (light transmission member), the above-described solid-state imaging device chip 20, and the solid-state imaging device chip 20 mounted thereon. A wiring board 30b that electrically connects the element chip 20 and an external circuit is provided, and a heat conductive resin 60 that has at least high heat conductivity compared to air.

  The wiring board 30b has a substantially plate shape, mounts at least the solid-state imaging element chip 20, and holds the lens frame 11. In addition, bonding pads (not shown) for inputting / outputting signals to / from the solid-state imaging element chip 20 are provided on the surface of the wiring board 30b. Further, the wiring board 30b may be provided with an I / F connector which is an interface for performing communication with the outside of the imaging module 3. At this time, the wiring board 30b is electrically connected to the solid-state imaging device chip 20 by the wires W5 and W6 connected to the bonding pads described above.

  The heat conductive resin 60 is an internal space formed by the cover glass holder 11, the solid-state image sensor chip 20, and the wiring board 30 b, and is filled in a space on the side surface side of the solid-state image sensor chip 20 and provided in a substantially annular shape. It has been. Further, the heat conductive resin 60 is provided so as to prevent the inflow of the heat conductive resin 60 before solidification by the inflow prevention member 51 described above, and to cover a part of the upper surface of the solid-state imaging device chip 20 after solidification. The heat conductive resin 60 transfers heat generated in the solid-state image sensor chip 20 to the cover glass holder 11 or the wiring board 30b side. In addition, the heat conductive resin 60 can be obtained by adding a diamond filler to an insulating resin, like the heat conductive resin 40 described above.

  According to the third embodiment described above, as in the first embodiment described above, in the solid-state image pickup device, the heat conductive resin is disposed between the solid-state image pickup device chip and the lens frame, so that the solid-state image pickup is performed. The heat generated in the element chip is transmitted to the lens frame through the heat conductive resin to be radiated to the outside, so that it is possible to secure the desired light collection efficiency and to realize the efficiency of heat radiation. .

(Embodiment 4)
FIG. 13 is a schematic diagram illustrating a configuration of the imaging module 4 according to the fourth embodiment of the present invention. In addition, the same code | symbol is attached | subjected to the component same as the structure demonstrated in FIG. In the fourth embodiment, an imaging module that combines the above-described first and third embodiments will be described.

  The imaging module 4 shown in FIG. 13 is provided with a cover glass holder 11 like the configuration of the solid-state imaging device 3 according to the third embodiment described above in the lens frame 10 of the first embodiment described above. In other words, the lens frame 10 that is held by the wiring board 30c and that holds the lens 10a has an internal space in which the solid-state imaging device chip 20, the cover glass holder 11, and the cover glass 11a are formed by the wiring board 30c and the lens 10a. Included. The solid-state imaging device 3 and the lens frame 10 are in contact with the heat radiating member 49 disposed on the wiring board 30c. The heat radiating member 49 is made of the same material as the heat radiating members 41, 46 and 48 described above.

  In addition, the imaging module 4 can release the heat of the heat dissipation member 49 to the outside through the through hole TH3 formed in the wiring board 30c. In addition, the imaging module 4 can release the heat of the heat conductive resin 60 to the outside through the through hole TH4 formed in the wiring board 30c.

  Thereby, also in the imaging module 4 including the configuration of the solid-state imaging device 3 described above, the heat generated in the solid-state imaging device chip is transmitted to the lens frame 10 via the heat conductive resin and the heat radiating member to be radiated to the outside. As a result, it is possible to ensure the desired light collection efficiency and increase the efficiency of heat dissipation.

  In the above-described embodiments, the solid-state imaging device and the imaging module have been described. However, these configurations are not limited to the solid-state imaging device, and the electronic device such as an information processing apparatus that holds an electronic circuit therein is used. It is applicable to radiating heat generated from the electronic circuit. That is, the present invention is not limited to Embodiments 1 to 4 described above, and may be applied as long as it includes an electronic circuit and the like, has a heat generating portion, and dissipates generated heat.

1, 1a, 1b, 1c, 2, 2a, 2b, 2c, 2d, 4 Imaging module 3 Solid-state imaging device 10 Mirror frame 10a Lens 10b, 11a Cover glass 11 Cover glass holder 20, 20a Solid-state imaging device chip 20b First member 20c 2nd member 30,30a, 30b Wiring board 40,42-45,47,60 Thermal conductive resin 41,46,48,49 Heat dissipation member

Claims (16)

A solid-state image sensor chip that photoelectrically converts received light; and
A substrate on which the solid-state image sensor chip is mounted;
A light transmissive member disposed on the light receiving surface side of the solid-state imaging element chip;
A lens frame that is held by the substrate and holds the light transmission member;
A thermally conductive member that contacts at least the side surface of the solid-state imaging device chip, the lens frame, and the substrate;
An imaging module comprising: The thermally conductive member is a thermally conductive resin,
The imaging module according to claim 1, wherein the thermally conductive resin is filled between a side surface of the solid-state imaging element chip and a wall surface of the lens frame. The substrate further includes an electronic element or a conductive member on a mounting surface of the solid-state imaging element chip,
The imaging module according to claim 2, wherein the thermal conductive resin embeds the electronic element or the conductive member.   The imaging module according to claim 1, wherein a thickness of the thermal conductive member is larger than a thickness of the solid-state imaging device chip. The solid-state image sensor chip is substantially plate-shaped,
2. The imaging module according to claim 1, further comprising a wall structure extending in a plate thickness direction of the solid-state imaging device chip outside the effective pixel region of the solid-state imaging device chip.   The imaging module according to claim 5, wherein the wall structure is a member formed separately from the solid-state imaging device chip and disposed on a light receiving surface of the solid-state imaging device chip.   6. The imaging module according to claim 5, wherein the wall structure is formed by arranging a polymer material that is cured by heat, air, or ultraviolet rays on the upper surface of the solid-state imaging element chip.   The imaging module according to claim 5, wherein the wall structure is formed in a process of manufacturing the solid-state imaging element chip.   The imaging module according to claim 5, wherein the wall structure has an inclined surface that is inclined outward from a surface on which the effective pixel region of the solid-state imaging element chip is formed.   The imaging module according to claim 1, wherein the heat conductive member is light-opaque.   The imaging module according to claim 10, wherein the thermally conductive member closes an opening of a through hole formed in the substrate.   The imaging module according to claim 10, wherein the thermal conductive member is in contact with a region excluding an effective pixel region in a light receiving surface of the solid-state imaging device chip. A heat transfer member in contact with the heat conductive member;
A space is formed by the substrate, the light transmission member, the lens frame and the heat transfer member,
The imaging module according to claim 1, wherein the heat transfer member extends outward from the space.   The imaging module according to claim 1, further comprising a heat transfer member that contacts a side surface of the lens frame outside a space formed by the substrate, the light transmission member, and the lens frame. The solid-state imaging device chip has a laminated structure in which a photoelectric conversion element portion and a peripheral circuit portion are laminated,
The imaging module according to claim 1, wherein the thermally conductive member is in contact with the peripheral circuit portion of the solid-state imaging device chip. A solid-state image sensor chip that photoelectrically converts received light; and
A substrate on which the solid-state image sensor chip is mounted;
A holding member held by the substrate;
A cover glass that is held by the holding member and is disposed on the light receiving surface of the solid-state image sensor chip and transmits light;
A thermally conductive member connected to at least a side surface of the solid-state imaging device chip, the holding member, and the substrate;
A lens frame that is held by the substrate and holds the lens, and encloses the solid-state imaging chip, the holding member, and the cover glass in an internal space formed by the substrate and the lens,
An imaging module comprising:

Images