JP2013218003A - Electro-optic device, method of manufacturing electro-optic device, and electronic apparatus - Google Patents

Abstract

An electro-optical device, a method of manufacturing an electro-optical device, and an electronic apparatus capable of improving display quality are provided.
A red color filter layer 80R for coloring a first display area 23R, a green color filter layer 80G for coloring a second display area 23G, and a third display area 23B are colored on a first substrate 10a. A light-shielding film 90 so as to straddle the red color filter layer 80R and the green color filter layer 80G, and to straddle the green color filter layer 80G and the blue color filter layer 80B. Is provided.
[Selection] Figure 5

Description

  The present invention relates to an electro-optical device, a method for manufacturing the electro-optical device, and an electronic apparatus.

  As the electro-optical device, for example, an active drive type liquid crystal device including a transistor for each pixel as an element for controlling switching of a pixel electrode is known. Liquid crystal devices are used in, for example, direct view displays and light valves.

  For example, Patent Document 1 discloses a so-called on-chip color filter structure in which a color filter is formed on the same substrate (element substrate) as a pixel electrode or a switching element. According to this structure, since color filters, pixel electrodes, and the like are formed on the same substrate, the pixel region and the color filter region are misaligned as in the case where the element substrate and the color filter substrate are separately manufactured (misalignment). ) Can be suppressed.

JP 2009-48063 A

  However, in the on-chip color filter structure, if there is a gap between the color filter region and the adjacent wiring (such as a source line or a capacitor line), light leakage may occur from the gap. As a result, there is a problem in that the display quality is deteriorated, for example, the colors are mixed due to the difference in the refractive index of the color filter region.

  An aspect of the present invention has been made to solve at least a part of the above problems, and can be realized as the following forms or application examples.

  Application Example 1 An electro-optical device according to this application example includes a first insulating layer, a plurality of first conductive films provided on the first insulating layer, and the plurality of first conductive films on a substrate. A second insulating layer provided to cover the plurality of second conductive films provided on the second insulating layer, a third insulating layer provided to cover the plurality of second conductive films, And a plurality of recesses located between the plurality of second conductive films in plan view, penetrating at least the third insulating layer and exposing the second insulating layer, and at least one of the plurality of recesses. A first colored layer provided on one, a second colored layer provided in a concave portion adjacent to each other across one of the first colored layer and the plurality of second conductive films, and provided on the second insulating layer A light-shielding film provided between the first colored layer and the second colored layer, the first colored layer, the second colored layer, and the front Characterized in that it comprises a electro-optical layer provided on an upper layer than the light-shielding film.

  According to this application example, since the light shielding film is provided so as to straddle between the first colored layer and the second colored layer, the light that has passed through the electro-optic layer of the adjacent pixel, or between the adjacent pixels The light that has passed through the electro-optic layer can be prevented from entering. Therefore, it is possible to prevent color mixing or light leakage, and display quality can be improved.

  Application Example 2 In the electro-optical device according to the application example, it is preferable that the light-shielding film is provided so as to straddle an edge of the first colored layer and an edge of the second colored layer in the insulating layer. .

  According to this application example, since the light shielding film is provided so as to straddle the edge of the first colored layer and the edge of the second colored layer, the light incident through the electro-optic layer disposed on the insulating layer Unnecessary light can be shielded in areas other than the colored layer. Therefore, it is possible to prevent color mixture or light from passing through.

  Application Example 3 In the electro-optical device according to the application example, it is preferable that the light shielding film is arranged in a floating state.

  According to this application example, since the light-shielding film is in a floating state, for example, even when the colored layer contains a metallic substance, the colored layer is adversely affected by the contact between the light-shielding film and the colored layer. Can be suppressed.

  Application Example 4 In the electro-optical device according to the application example, the plurality of first conductive films and the plurality of second conductive films are arranged so as to overlap in a plan view, and the plurality of recesses are It is preferable that the first insulating layer is exposed through at least the second insulating layer and the third insulating layer.

  According to this application example, the light shielding film is provided so as to straddle the edge of the second colored layer from the edge of the first colored layer, even when the concave portion is formed deeply. Unnecessary light can be shielded.

  Application Example 5 In the electro-optical device according to the application example, it is preferable that the electro-optical layer is a liquid crystal layer.

  According to this application example, even when the particles of the liquid crystal layer do not perform a predetermined operation (such as light leakage) due to the influence of an electric field at the boundary between adjacent pixels, the first colored layer and the second colored layer Since the light-shielding film is disposed between them, stray light can be shielded and display quality can be improved.

Application Example 6 A method of manufacturing an electro-optical device according to this application example includes a first insulating layer forming step of forming a first insulating layer on a substrate, and a plurality of first conductive films on the first insulating layer. Forming a first conductive film; forming a second insulating layer covering the plurality of first conductive films; and forming a plurality of second conductive layers on the second insulating layer. A second conductive film forming step, a third insulating layer forming step of forming a third insulating layer covering the plurality of second conductive films, and a plurality of second conductive layers overlapping on the third insulating layer. A light shielding film forming step for forming a plurality of light shielding films at positions; a concave portion forming step for forming a plurality of concave portions between each of the plurality of light shielding films as seen in plan view of the third insulating layer; A first colored layer is formed in at least one of the recesses, and adjacent recesses sandwiching one of the plurality of second conductive films. A colored layer forming step of forming a second colored layer; and an electro-optic layer forming step of forming an electro-optic layer above the first colored layer, the second colored layer, and the light shielding film. And

  According to this application example, since the light shielding film is formed between the first colored layer and the second colored layer (so as to straddle), the light that has passed through the electro-optic layer of the adjacent pixel or between the adjacent pixels The light that has passed through the electro-optic layer can be prevented from entering. Therefore, it is possible to prevent color mixing or light leakage, and display quality can be improved.

  Application Example 7 In the method of manufacturing the electro-optical device according to the application example, in the recess forming step, the third insulating layer is etched using the light shielding film as a mask to form the plurality of recesses. preferable.

  According to this application example, since the plurality of concave portions are formed using the light shielding film as a mask, it is possible to prevent a gap from being generated between the first colored layer, the second colored layer, and the light shielding film. Therefore, it is possible to prevent light leakage from occurring between the light shielding film and the first colored layer and between the light shielding film and the second colored layer.

  Application Example 8 In the method of manufacturing an electro-optical device according to the application example, after the light shielding film formation step, a fourth insulating layer is formed on the third insulating layer including the light shielding film. The recess forming step includes: forming a resist pattern on the fourth insulating layer, the resist pattern having a shape smaller than the light shielding film in plan view; and using the resist pattern as a mask, the fourth insulating layer. It is preferable to include a first etching process step for etching the first insulating layer and a second etching process step for etching the first insulating layer using the light shielding film as a mask.

  According to this application example, after forming a part of the recess in the fourth insulating layer using a resist pattern smaller than the light shielding film as a mask, the remaining recess is formed using the light shielding film as a mask. It is possible to prevent a gap from being generated. Furthermore, the depth of the colored layer can be increased by the thickness of the fourth insulating layer.

  Application Example 9 In the method for manufacturing an electro-optical device according to the application example, it is preferable that the electro-optical layer forming step forms a liquid crystal layer.

  According to this application example, when the liquid crystal layer is formed, even if the particles of the liquid crystal layer do not perform a predetermined operation (such as light leakage) due to the influence of an electric field at the boundary between adjacent pixels, the first coloring is performed. Since a light shielding film is formed between the layer and the second colored layer, stray light can be shielded and display quality can be improved.

  Application Example 10 An electronic apparatus according to this application example includes the above-described electro-optical device.

  According to this application example, since the electro-optical device described above is provided, an electronic apparatus with high display quality can be provided.

FIG. 2 is a schematic plan view illustrating a configuration of a liquid crystal device. FIG. 2 is a schematic cross-sectional view taken along line H-H ′ of the liquid crystal device illustrated in FIG. 1. FIG. 3 is an equivalent circuit diagram illustrating an electrical configuration of the liquid crystal device. FIG. 3 is a schematic cross-sectional view illustrating a structure of a liquid crystal device. 4 is a schematic cross-sectional view specifically showing a structure around a color filter layer in a liquid crystal device. 5 is a flowchart showing a method for manufacturing a liquid crystal device in the order of steps. FIG. 6 is a schematic cross-sectional view illustrating a method for manufacturing a part of the liquid crystal device. FIG. 6 is a schematic cross-sectional view illustrating a method for manufacturing a part of the liquid crystal device. FIG. 6 is a schematic cross-sectional view illustrating a method for manufacturing a part of the liquid crystal device. FIG. 6 is a schematic cross-sectional view illustrating a method for manufacturing a part of the liquid crystal device. FIG. 6 is a schematic cross-sectional view illustrating a method for manufacturing a part of the liquid crystal device. FIG. 6 is a schematic cross-sectional view illustrating a method for manufacturing a part of the liquid crystal device. FIG. 6 is a schematic cross-sectional view illustrating a method for manufacturing a part of the liquid crystal device. FIG. 6 is a schematic cross-sectional view illustrating a method for manufacturing a part of the liquid crystal device. Schematic which shows the structure of the projection type display apparatus as an electronic device provided with the liquid crystal device.

  DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, embodiments of the invention will be described with reference to the drawings. Note that the drawings to be used are appropriately enlarged or reduced so that the part to be described can be recognized.

  In the following embodiments, for example, when “on the substrate” is described, the substrate is disposed so as to be in contact with the substrate, or is disposed on the substrate via another component, or the substrate. It is assumed that a part is arranged so as to be in contact with each other and a part is arranged via another component.

  In the present embodiment, an active matrix liquid crystal device including a thin film transistor as a pixel switching element will be described as an example of an electro-optical device. This liquid crystal device can be suitably used, for example, as a light modulation element (liquid crystal light valve) of a projection display device (liquid crystal projector).

<Liquid crystal device as electro-optical device>
First, the liquid crystal device of this embodiment will be described with reference to FIGS. FIG. 1 is a schematic plan view showing the configuration of the liquid crystal device. 2 is a schematic cross-sectional view taken along the line HH ′ of the liquid crystal device shown in FIG. FIG. 3 is an equivalent circuit diagram showing an electrical configuration of the liquid crystal device.

  As shown in FIGS. 1 and 2, the liquid crystal device 100 according to the present embodiment includes an element substrate 10 and a counter substrate 20 which are disposed to face each other, and a liquid crystal layer 15 as an electro-optical layer sandwiched between the pair of substrates. Have. As the first base material 10a as the substrate constituting the element substrate 10 and the second base material 20a constituting the counter substrate 20, for example, a transparent substrate such as a glass substrate or a quartz substrate is used.

  The element substrate 10 is larger than the counter substrate 20, and both the substrates are bonded via a sealing material 14 disposed along the outer periphery of the counter substrate 20. Liquid crystal layer 15 is configured by sealing liquid crystal having positive or negative dielectric anisotropy in the gap. For the sealing material 14, for example, an adhesive such as a thermosetting or ultraviolet curable epoxy resin is employed. Spacers (not shown) are mixed in the sealing material 14 to keep the distance between the pair of substrates constant.

  A pixel region E in which a plurality of pixels P are arranged is provided inside the sealing material 14. The pixel region E may include dummy pixels arranged so as to surround the plurality of pixels P in addition to the plurality of pixels P contributing to display.

  A data line driving circuit 22 is provided between the sealing material 14 along one side of the element substrate 10 and the one side. In addition, an inspection circuit 25 is provided between the sealing material 14 and the pixel region E along the other one side facing the one side. Further, a scanning line driving circuit 24 is provided between the sealing material 14 and the pixel region E along the other two sides orthogonal to the one side and facing each other. A plurality of wirings 29 connecting the two scanning line driving circuits 24 are provided between the sealing material 14 and the inspection circuit 25 along the other one side facing the one side.

  Inside the sealing material 14 arranged in a frame shape on the counter substrate 20 side, a light shielding portion 18 (parting portion) is also provided in the same frame shape. The light shielding portion 18 is made of, for example, a light shielding metal or metal oxide, and the inside of the light shielding portion 18 is a pixel region E having a plurality of pixels P.

  Wirings connected to the data line driving circuit 22 and the scanning line driving circuit 24 are connected to a plurality of external connection terminals 61 arranged along the one side. Hereinafter, the direction along the one side will be referred to as the X direction, and the direction along the other two sides orthogonal to the one side and facing each other will be described as the Y direction. The arrangement of the inspection circuit 25 is not limited to this, and the inspection circuit 25 may be provided between the sealing material 14 along the data line driving circuit 22 and the pixel region E.

  As shown in FIG. 2, on the surface of the first base material 10a on the liquid crystal layer 15 side, a transparent pixel electrode 27 provided for each pixel P and a thin film transistor (TFT: Thin Film Transistor, which is a switching element) are provided. Hereinafter, the TFT is referred to as “TFT 30”), signal wirings, and a first alignment film 28 covering them. The element substrate 10 in the present invention includes at least the pixel electrode 27, the TFT 30, the signal wiring, and the first alignment film 28.

  On the surface of the counter substrate 20 on the liquid crystal layer 15 side, the light shielding portion 18, the planarizing layer 33 formed so as to cover the light shielding portion 18, and the common electrode 31 provided so as to cover the planarizing layer 33 are shared. A second alignment film 32 covering the electrode 31 is provided. The counter substrate 20 in the present invention includes at least the light shielding portion 18, the common electrode 31, and the second alignment film 32.

  As shown in FIG. 1, the light shielding unit 18 surrounds the pixel region E and is provided at a position overlapping the scanning line driving circuit 24 and the inspection circuit 25 in plan view. Thus, the light incident on the peripheral circuit including these drive circuits from the counter substrate 20 side is shielded, and the peripheral circuit is prevented from malfunctioning due to the light. Further, unnecessary stray light is shielded from entering the pixel region E to ensure high contrast in the display of the pixel region E.

  The planarization layer 33 is made of, for example, an inorganic material such as silicon oxide, and is provided so as to cover the light shielding portion 18 with light transmittance. As a method for forming such a planarization layer 33, for example, a method of forming a film by using a plasma CVD (Chemical Vapor Deposition) method or the like can be cited.

  The common electrode 31 is made of a transparent conductive film such as ITO (Indium Tin Oxide), for example, covers the planarization layer 33, and as shown in FIG. 1, the vertical conduction parts 26 (FIG. 1) provided at the four corners of the counter substrate 20. To the wiring on the element substrate 10 side.

  The first alignment film 28 covering the pixel electrode 27 and the second alignment film 32 covering the common electrode 31 are selected based on the optical design of the liquid crystal device 100. For example, by depositing an organic material such as polyimide and rubbing the surface, an organic alignment film obtained by subjecting liquid crystal molecules having positive dielectric anisotropy to a substantially horizontal alignment process, or vapor phase growth Examples thereof include an inorganic alignment film formed by depositing an inorganic material such as SiOx (silicon oxide) using a method and substantially vertically aligning liquid crystal molecules having negative dielectric anisotropy. In the present embodiment, the inorganic alignment film is employed as the first alignment film 28 and the second alignment film 32.

  Such a liquid crystal device 100 is, for example, a transmissive type, and adopts an optical design of a normally white mode in which the pixel P is brightly displayed when not driven and a normally black mode in which the pixel P is darkly displayed when not driven. Polarizing elements are arranged and used according to the optical design on the light incident side and the light exit side, respectively. In this embodiment, a normally black mode is employed.

  As shown in FIG. 3, the liquid crystal device 100 includes a plurality of scanning lines 3 a and a plurality of data lines 6 a that are insulated and orthogonal to each other at least in the pixel region E, and a capacitor line 3 b. The direction in which the scanning line 3a extends is the X direction, and the direction in which the data line 6a extends is the Y direction.

  A pixel electrode 27, a TFT 30, and a capacitive element 16 are provided in a region divided by the scanning line 3a, the data line 6a, the capacitive line 3b, and these signal lines, and these constitute a pixel circuit of the pixel P. doing.

  The scanning line 3 a is electrically connected to the gate of the TFT 30, and the data line 6 a is electrically connected to the data line side source / drain region (source region) of the TFT 30. The pixel electrode 27 is electrically connected to the pixel electrode side source / drain region (drain region) of the TFT 30.

  The data line 6a is connected to the data line driving circuit 22 (see FIG. 1), and supplies image signals D1, D2,..., Dn supplied from the data line driving circuit 22 to the pixels P. The scanning line 3a is connected to the scanning line driving circuit 24 (see FIG. 1), and supplies the scanning signals SC1, SC2,..., SCm supplied from the scanning line driving circuit 24 to each pixel P.

  The image signals D1 to Dn supplied from the data line driving circuit 22 to the data lines 6a may be supplied line-sequentially in this order, or may be supplied for each of a plurality of adjacent data lines 6a for each group. Good. The scanning line driving circuit 24 supplies the scanning signals SC1 to SCm to the scanning line 3a in a pulse-sequential manner at a predetermined timing.

  In the liquid crystal device 100, the TFT 30 as a switching element is turned on for a certain period by the input of the scanning signals SC1 to SCm, so that the image signals D1 to Dn supplied from the data line 6a are supplied to the pixel electrode 27 at a predetermined timing. It is the structure written in. The predetermined level of image signals D1 to Dn written to the liquid crystal layer 15 through the pixel electrode 27 is held for a certain period between the pixel electrode 27 and the common electrode 31 disposed to face each other through the liquid crystal layer 15. The

  In order to prevent the retained image signals D1 to Dn from leaking, the capacitive element 16 is connected in parallel with the liquid crystal capacitance formed between the pixel electrode 27 and the common electrode 31. The capacitive element 16 is provided between the pixel electrode side source / drain region of the TFT 30 and the capacitive line 3b. The capacitive element 16 has a dielectric layer between two capacitive electrodes.

  FIG. 4 is a schematic cross-sectional view showing the structure of the liquid crystal device. Hereinafter, the structure of the liquid crystal device will be described with reference to FIG. FIG. 4 shows the cross-sectional positional relationship of each component and is expressed on a scale that can be clearly shown.

  As shown in FIG. 4, the liquid crystal device 100 includes an element substrate 10 that is one of a pair of substrates, and a counter substrate 20 that is the other of the pair of substrates disposed to face the element substrate 10. As described above, the first base material 10a configuring the element substrate 10 and the second base material 20a configuring the counter substrate 20 are configured by, for example, a quartz substrate or the like.

  A lower light-shielding film 3c made of titanium (Ti), chromium (Cr), or the like is formed on the first base material 10a. The lower light-shielding film 3c is planarly patterned in a lattice shape and defines an opening area of each pixel. The lower light shielding film 3c may function as a part of the scanning line 3a. A base insulating layer 11a made of a silicon oxide film or the like is formed on the first base material 10a and the lower light shielding film 3c.

  On the base insulating layer 11a, the TFT 30, the scanning line 3a, and the like are formed. The TFT 30 has, for example, an LDD (Lightly Doped Drain) structure, and includes a semiconductor layer 30a made of polysilicon or the like, a gate insulating film 11g formed so as to cover the semiconductor layer 30a, and the gate insulating film 11g. And a scanning line 3a made of a formed polysilicon film or the like. As described above, the scanning line 3a also functions as the gate electrode 30g.

  The semiconductor layer 30a is formed as an N-type TFT 30 by implanting N-type impurity ions such as phosphorus (P) ions. Specifically, the semiconductor layer 30a includes a channel region 30c, a data line side LDD region 30s1, a data line side source / drain region 30s, a pixel electrode side LDD region 30d1, and a pixel electrode side source / drain region 30d. ing.

  The channel region 30c is doped with P-type impurity ions such as boron (B) ions. The other regions (30s1, 30s, 30d1, 30d) are doped with N-type impurity ions such as phosphorus (P) ions. Thus, the TFT 30 is formed as an N-type TFT.

  A first interlayer insulating layer 11b made of a silicon oxide film or the like is formed on the gate electrode 30g and the base insulating layer 11a. A capacitive element 16 is provided on the first interlayer insulating layer 11b. Specifically, a first capacitor electrode 16a (first conductive film) as a pixel potential side capacitor electrode electrically connected to the pixel electrode side source / drain region 30d and the pixel electrode 27 of the TFT 30, and a fixed potential side capacitor electrode. As a result, a part of the capacitor line 3b (second capacitor electrode 16b (first conductive film)) is arranged to face the dielectric layer 16c, so that the capacitor element 16 is formed.

  The capacitor line 3b (second capacitor electrode 16b) includes at least one of refractory metals such as Ti (titanium), Cr (chromium), W (tungsten), Ta (tantalum), and Mo (molybdenum). , Metal simple substance, alloy, metal silicide, polysilicide, and a laminate of these. Alternatively, it can be formed from an Al (aluminum) film.

  The first capacitor electrode 16 a is made of, for example, a conductive polysilicon film and functions as a pixel potential side capacitor electrode of the capacitor element 16. However, the first capacitor electrode 16a may be composed of a single layer film or a multilayer film containing a metal or an alloy, like the capacitor line 3b. The first capacitor electrode 16a has a function as a pixel potential side capacitor electrode, and the pixel electrode side source / drain region of the pixel electrode 27 and the TFT 30 via the contact hole CNT51, the contact hole CNT52, the relay layer 55, and the contact hole CNT53. 30d (drain region) has a function of relay connection.

  A data line 6a (second conductive film) and a relay layer 55 are formed on the capacitive element 16 via a second interlayer insulating layer 11c (first insulating layer). The data line 6a is electrically connected to the data line side source / drain region 30s (source region) of the semiconductor layer 30a through the contact hole CNT54 formed in the first interlayer insulating layer 11b and the second interlayer insulating layer 11c. Has been.

  A third interlayer insulating layer 11d (second insulating layer) is provided on the second interlayer insulating layer 11c including the data line 6a. A fourth interlayer insulating layer 11e (third insulating layer) is provided on the third interlayer insulating layer 11d, and a color filter layer 80 as a colored layer is provided in the display region 23 of the fourth interlayer insulating layer 11e. It has been. Further, a passivation layer 11f (fourth insulating layer) is provided on the fourth interlayer insulating layer 11e. The upper surface of the passivation layer 11f is subjected to a planarization process such as CMP (Chemical Mechanical Polishing).

  A pixel electrode 27 is provided on the passivation layer 11f. The pixel electrode 27 is connected to the contact hole CNT51 via the contact hole CNT53, the relay layer 55, the contact hole CNT52, and the first capacitor electrode 16a, whereby the pixel electrode side source / drain region 30d (drain region) of the semiconductor layer 30a. Is electrically connected. The pixel electrode 27 is formed of a transparent conductive film such as an ITO (Indium Tin Oxide) film.

  On the pixel electrode 27 and the passivation layer 11f, a first alignment film 28 subjected to a predetermined alignment process such as a rubbing process is provided. The first alignment film 28 is made of a transparent organic film such as a polyimide film, for example. On the first alignment film 28, a liquid crystal layer 15 in which an electro-optical material such as liquid crystal is sealed is provided in a space surrounded by the sealing material 14 (see FIG. 2).

  On the other hand, the common electrode 31 is provided on the entire surface of the second base material 20a. On the common electrode 31 (on the lower side in FIG. 4), a second alignment film 32 subjected to a predetermined alignment process such as a rubbing process is provided. Similar to the pixel electrode 27 described above, the common electrode 31 is made of a transparent conductive film such as an ITO film. The second alignment film 32 is also made of a transparent organic film such as a polyimide film, for example, similarly to the first alignment film 28 described above.

  The liquid crystal layer 15 takes a predetermined alignment state by the first alignment film 28 and the second alignment film 32 in a state where an electric field from the pixel electrode 27 is not applied. The sealing material 14 is an adhesive made of, for example, a photocurable resin or a thermosetting resin, for bonding the element substrate 10 and the counter substrate 20 around them, and a distance between the two substrates is set to a predetermined value. Spacers such as glass fiber or glass beads are mixed.

  FIG. 5 is a schematic cross-sectional view specifically showing the structure around the color filter layer in the liquid crystal device. Hereinafter, the structure around the color filter layer will be described with reference to FIG.

As shown in FIG. 5, on the first base material 10a of the liquid crystal device 100, wiring (data lines 6a, capacitive electrodes 16a, 16b, etc.), a color filter layer 80, and the like are provided. Specifically, an insulating layer 11 (11a to 11e) made of a silicon oxide film (SiO ₂ ) or the like is provided on the first base material 10a, and a TFT 30 (not shown) is formed in the insulating layer 11 (see FIG. 4). ), And capacitive elements 16 (16a, 16b) and data lines 6a.

  In addition, a color filter layer 80 is provided in a region overlapping the pixel electrode 27 in the insulating layer 11 in a plan view. For example, in the first display region 23R where the first pixel electrode 27a is provided, a red color filter layer 80R (first colored layer) of red is provided. In the second display area 23G where the second pixel electrode 27b is provided, a green color filter layer 80G (second colored layer) is provided. A blue color filter layer 80B for blue is provided in the third display area 23B in which the third pixel area 27c is provided.

  The wirings such as the capacitive element 16 (16a, 16b) and the data line 6a described above are provided between the color filter layers 80 (80R, 80G, 80B) in a plan view. On the insulating layer 11 having the color filter layer 80, a passivation layer 11f having a light shielding film 90 that shields light between the color filter layers 80 is disposed. The upper surface of the passivation layer 11f is subjected to a planarization process by, for example, a CMP polishing process.

  The light shielding film 90 is planarly filled, for example, between the edge of the red color filter layer 80R and the edge of the green color filter layer 80G, in other words, the red color filter layer 80R and the green color. It is provided on the insulating layer 11 so as to fill a region between the filter layer 80G. That is, no gap is generated between the color filter layer 80 and the light shielding film 90. The same applies to the other color filter layers 80 (for example, 80G and 80B).

  The light shielding film 90 is preferably disposed as close to the liquid crystal layer 15 as possible. Further, the light-shielding film 90 is in contact with the color filter layer 80, and it is sufficient that light incident between the color filter layers 80 can be shielded. Moreover, it is preferable that the width of the wiring disposed below the light shielding film 90 is larger.

  The material of the light shielding film 90 may be any material that has light shielding properties and can function as a mask in the manufacturing process described later. Examples thereof include titanium (Ti), chromium (Cr), and aluminum (Al). It is done.

  The light shielding film 90 is arranged in a floating state. Thereby, even when the color filter layer 80 contains a metal-based substance, it is possible to suppress an adverse effect (for example, short-circuit) on the color filter layer 80 due to the contact between the light shielding film 90 and the color filter layer 80. be able to.

  A passivation layer 11 f is provided on the light shielding film 90 and the color filter layer 80. The upper surface of the passivation layer 11f is subjected to a planarization process by, for example, a CMP polishing process.

  A pixel electrode 27 (27a, 27b, 27c) is provided on the passivation layer 11f. A first alignment film 28 is provided on the passivation layer 11 f including the pixel electrode 27.

  On the first alignment film 28, the liquid crystal layer 15 is disposed. A description of the counter substrate 20 disposed above the liquid crystal layer 15 is omitted. A backlight is disposed above the counter substrate 20.

  In this way, by arranging the light shielding film 90 between the color filter layers 80 in a planar manner, the light between the display regions 23 transmitted according to the alignment state of the liquid crystal layer 15 can be shielded by the light shielding film 90. Therefore, it is possible to prevent light that is not colored from entering a certain display area 23 or to mix colors that can be seen in the adjacent display area 23, thereby improving display quality.

<Method for manufacturing liquid crystal device>
FIG. 6 is a flowchart showing a manufacturing method of the liquid crystal device in the order of steps. 7 to 14 are schematic cross-sectional views illustrating a method for manufacturing a part of the liquid crystal device. Hereinafter, a method for manufacturing the liquid crystal device will be described with reference to FIGS.

  First, a manufacturing method on the element substrate 10 side will be described. In step S11, the TFT 30 and the wiring are formed on the first base material 10a made of a glass substrate or the like. Specifically, the TFT 30 and the like are formed on the first base material 10a by using a well-known film formation technique, photolithography technique, and etching technique.

  Next, the capacitive element 16 is formed above the TFT 30 (see FIG. 4). Specifically, this will be described with reference to FIG. First, as shown in FIG. 4, the first capacitor electrode 16a is patterned on the first interlayer insulating layer 11b by using, for example, a known film formation technique, photolithography technique, and etching technique. The first capacitor electrode 16a is made of, for example, a polysilicon film.

  Next, the dielectric layer 16c is formed in a solid form. The dielectric layer 16c is configured by stacking, for example, HTO and SiN. Thereafter, the second capacitor electrode 16b is patterned. The second capacitor electrode 16b is made of, for example, a polysilicon film. Further, for example, the data line 6a made of aluminum is formed.

  In step S12, the light shielding film 90 is formed. In step S13, the color filter layer 80 is formed. In step S14, the pixel electrode 27 is formed. In step S15, the first alignment film 28 is formed. Hereinafter, these specific manufacturing methods will be described with reference to FIGS.

  First, in the steps shown in FIG. 7 (first insulating layer forming step to third insulating layer forming step, first conductive film forming step, second conductive film forming step), each wiring formed on the first interlayer insulating layer 11b. Insulating layer 11 (second interlayer insulating layer 11c, third interlayer insulating layer 11d, fourth interlayer insulating layer 11e, see FIG. 4) is formed in order so as to cover (capacitance element 16, data line 6a, see FIG. 4). To do. Thereafter, the upper surface of the insulating layer 11 generated by the wiring or the like is planarized. As a planarization method, for example, as described above, a CMP polishing process is performed.

  Next, in the process shown in FIG. 8 (light-shielding film forming process, fourth insulating layer forming process), the light-shielding film 90 is formed on the insulating layer 11 and the insulating layer 11f1 (fourth insulating layer) is covered so as to cover the light-shielding film 90. ). Specifically, the light shielding film 90 is formed between the red color filter formation region 80R1 and the green color filter formation region 80G1 and between the green color filter formation region 80G1 and the blue color filter formation region 80B1 on the insulating layer 11. To do. As a method for forming the light shielding film 90, for example, a known film formation method, photolithography method, and etching method are used.

  The light shielding film 90 is not limited to being provided only in the long side direction of the color filter forming regions (80R1, 80G1, and 80B1), and may be provided also in the short side direction. It is preferable to provide the light-shielding film 90 along at least the long side for easy visibility when light leaks.

  Next, an insulating layer 11 f 1 is formed so as to cover the light shielding film 90 and the insulating layer 11. As the film formation method, for example, a CVD method or the like can be used. After that, the upper surface of the insulating layer 11f1 that is uneven due to the light shielding film 90 is planarized. As a planarization method, for example, a CMP polishing process is performed as described above.

  Next, in a step shown in FIG. 9 (resist pattern forming step), a resist pattern 91 is formed on the insulating layer 11f1. Specifically, a resist pattern 91 having a shape that is slightly smaller than the shape of the light shielding film 90 in plan view is formed. First, a resist film is formed over the entire insulating layer 11f1. Next, a resist pattern 91 having a size slightly smaller than that of the light shielding film 90 in a plan view is formed using a photolithography method.

  Next, in the process shown in FIG. 10 (recess formation process, first etching process), the insulating layer 11f1 is etched using the resist pattern 91 as a mask. Specifically, since the resist pattern 91 that is slightly smaller than the light shielding film 90 in plan is used as a mask, the surface of the light shielding film 90 is first etched when the etching process is performed. Thereby, a part (concave part) of the color filter groove 80a is formed.

  Next, in the process shown in FIG. 11 (recess formation process, second etching process), an etching process is subsequently performed to form the color filter groove 80a before the color filter layer 80 is formed. Specifically, the insulating layer 11 is etched using the light shielding film 90 that is slightly larger than the resist pattern 91 as a mask. As a result, a color filter groove 80 a (concave portion) having a size along the outer periphery of the light shielding film 90 is formed in the insulating layer 11.

  At this time, since the etching process is performed using the light shielding film 90 as a mask, a part of the light shielding film 90 is etched. In other words, the corners of the light shielding film 90 are shaved. Further, since the color filter groove 80a is formed in the insulating layer 11 using the light shielding film 90 as a mask, there is no misalignment as compared with the case where a photomask is newly placed and etched, and the light shielding film 90 and the color filter layer are not formed. It is possible to prevent a gap from being formed between the two.

  Next, in the step shown in FIG. 12 (colored layer forming step), the colorant 80b is applied into the color filter groove 80a. Specifically, for example, a red colorant (80b), a green colorant (80b), and a blue colorant (80b) are selectively formed in the color filter groove 80a by using a spin coat method.

  Thereafter, for example, the colorant 80 b is heated and cured to complete the color filter layer 80. In the color filter layer 80 of the present embodiment, the coloring material 80b is embedded up to the height of the upper surface of the insulating layer 11f1.

  Note that the present invention is not limited to this configuration, and the color material 80b may be embedded up to the height of the upper surface of the light shielding film 90, or the color material 80b may be embedded up to the height of the lower surface of the light shielding film 90. In other words, the gap is formed between the light shielding film 90 and the color filter layer 80 so that no gap is generated.

  By forming the color filter layer 80 as described above, the light shielding film 90 and the color filter layer 80 are brought into contact with each other, and a gap can be prevented from being formed between the color filter layer 80 and the light shielding film 90. Therefore, unnecessary light between the display regions 23 transmitted depending on the alignment state of the liquid crystal layer 15 can be shielded by the light shielding film 90.

  In other words, in a certain display area 23, it is possible to prevent light that is not colored from entering or a color that can be seen in the adjacent display area 23 from being mixed, and display quality can be improved. In addition, the viewing angle can be improved.

  Further, as described above, by forming the color filter layer 80 after forming the light shielding film 90, the color filter layer 80 can be formed without being damaged when the light shielding film 90 is formed.

  Next, in the step shown in FIG. 13, a passivation layer 11 f is formed so as to cover the insulating layer 11 f 1 and the color filter layer 80. Specifically, a CMP polishing process is performed on the passivation layer 11f in order to flatten the unevenness generated on the upper surface of the passivation layer 11f.

  Next, in the step shown in FIG. 14, the pixel electrode 27 and the first alignment film 28 are formed. Specifically, the pixel electrode 27 made of an ITO film or the like is formed on the passivation layer 11f that has been subjected to the planarization process, using a known photolithography technique and etching technique.

Next, the first alignment film 28 is formed so as to cover the pixel electrode 27 and the passivation layer 11f. As a manufacturing method of the first alignment film 28, for example, an oblique deposition method in which an inorganic material such as silicon oxide (SiO ₂ ) is obliquely deposited is used. Thus, the element substrate 10 side is completed.

  Next, a manufacturing method on the counter substrate 20 side will be described with reference to FIG. First, in step S21, the common electrode 31 is formed on the second base material 20a made of a translucent material such as a glass substrate by using a well-known film forming technique, photolithography technique, and etching technique.

  In step S <b> 22, the second alignment film 32 is formed on the common electrode 31. The manufacturing method of the second alignment film 32 is the same as that of the first alignment film 28, and is formed using, for example, an oblique deposition method. Thus, the counter substrate 20 side is completed. Next, a method for bonding the element substrate 10 and the counter substrate 20 will be described.

  In step S <b> 31, the sealing material 14 is applied on the element substrate 10. Specifically, the relative positional relationship between the element substrate 10 and the dispenser (which may be a discharge device) is changed, and the sealing material 14 is placed on the periphery of the display area E on the element substrate 10 (so as to surround the display area E). Apply.

  In step S32, the element substrate 10 and the counter substrate 20 are bonded together. Specifically, the element substrate 10 and the counter substrate 20 are bonded together via the sealing material 14 applied to the element substrate 10. More specifically, it is performed while ensuring the positional accuracy in the vertical and horizontal directions of the substrates 10 and 20.

  In step S33 (electro-optic layer forming step), liquid crystal is injected into the structure from a liquid crystal injection port (not shown), and then the liquid crystal injection port is sealed. For the sealing, for example, a sealing material such as a resin is used. Thus, the liquid crystal device 100 is completed.

<Electronic equipment>
Next, a projection display apparatus as an electronic apparatus according to the present embodiment will be described with reference to FIG. FIG. 15 is a schematic diagram showing a configuration of a projection display device including the liquid crystal device described above.

  As shown in FIG. 15, a projection display apparatus 1000 as an electronic apparatus according to the present embodiment includes a polarized illumination apparatus 1100 arranged along the system optical axis L, and two dichroic mirrors 1104 and 1105 as light separation elements. Three reflection mirrors 1106, 1107, 1108, five relay lenses 1201, 1202, 1203, 1204, 1205, three transmissive liquid crystal light valves 1210, 1220, 1230 as light modulation means, and a light combining element As a cross dichroic prism 1206 and a projection lens 1207.

  The polarized light illumination device 1100 is generally configured by a lamp unit 1101 as a light source composed of a white light source such as an ultra-high pressure mercury lamp or a halogen lamp, an integrator lens 1102, and a polarization conversion element 1103.

  The dichroic mirror 1104 reflects red light (R) and transmits green light (G) and blue light (B) among the polarized light beams emitted from the polarization illumination device 1100. Another dichroic mirror 1105 reflects the green light (G) transmitted through the dichroic mirror 1104 and transmits the blue light (B).

  The red light (R) reflected by the dichroic mirror 1104 is reflected by the reflection mirror 1106 and then enters the liquid crystal light valve 1210 via the relay lens 1205. Green light (G) reflected by the dichroic mirror 1105 enters the liquid crystal light valve 1220 via the relay lens 1204. The blue light (B) transmitted through the dichroic mirror 1105 enters the liquid crystal light valve 1230 via a light guide system including three relay lenses 1201, 1202, 1203 and two reflection mirrors 1107, 1108.

  The liquid crystal light valves 1210, 1220, and 1230 are disposed to face the incident surfaces of the cross dichroic prism 1206 for each color light. The color light incident on the liquid crystal light valves 1210, 1220, and 1230 is modulated based on video information (video signal) and emitted toward the cross dichroic prism 1206.

  In this prism, four right-angle prisms are bonded together, and a dielectric multilayer film that reflects red light and a dielectric multilayer film that reflects blue light are formed in a cross shape on the inner surface thereof. The three color lights are synthesized by these dielectric multilayer films, and the light representing the color image is synthesized. The synthesized light is projected on the screen 1300 by the projection lens 1207 which is a projection optical system, and the image is enlarged and displayed.

  The liquid crystal light valve 1210 is the one to which the liquid crystal device 100 described above is applied. The liquid crystal device 100 is arranged with a gap between a pair of polarizing elements arranged in crossed Nicols on the incident side and the emission side of colored light. The same applies to the other liquid crystal light valves 1220 and 1230.

  According to such a projection type display apparatus 1000, the liquid crystal light valve 1210, 1220, 1230 uses the liquid crystal apparatus 100 in which color mixing is suppressed, so that high display quality is realized.

  As described above in detail, according to the liquid crystal device 100, the method for manufacturing the liquid crystal device 100, and the electronic apparatus of the present embodiment, the following effects can be obtained.

  (1) According to the liquid crystal device 100 of the present embodiment, since the light shielding film 90 is provided so as to straddle between the color filter layers 80, the liquid crystal layer 15 of the adjacent pixel (for example, the second display region 23G) is provided. For example, it is possible to prevent light that has passed or unnecessary light that has passed between adjacent pixels from entering the first display region 23R. In other words, unnecessary light having an adverse effect can be shielded by the light shielding film 90. Therefore, it is possible to prevent color mixing or light leakage, and display quality can be improved.

  (2) According to the liquid crystal device 100 of the present embodiment, since the light shielding film 90 is in a floating state, for example, even when the color filter layer 80 contains a metallic substance, the light shielding film 90 and the color An adverse effect on the color filter layer 80 due to contact with the filter layer 80 can be suppressed.

  (3) According to the method for manufacturing the liquid crystal device 100 of the present embodiment, after forming a part of the color filter groove 80a in the insulating layer 11f1 using the resist pattern 91 that is slightly smaller than the light shielding film 90 as a mask, the light shielding film 90 is formed. Since the remaining color filter groove 80a is formed as a mask, it is possible to prevent a gap from being generated between the color filter groove 80a and the light shielding film 90. Therefore, for example, light that has passed through the liquid crystal layer 15 of the adjacent pixel (for example, the second display region 23G) or unnecessary light that has passed between the adjacent pixels is prevented from entering the first display region 23R, for example. be able to. As a result, it is possible to prevent color mixing and light leakage.

  (4) According to the electronic apparatus of the present embodiment, since the liquid crystal device 100 described above is provided, an electronic apparatus with high display quality can be provided.

  The aspect of the present invention is not limited to the above-described embodiment, and can be appropriately changed without departing from the spirit or idea of the invention that can be read from the claims and the entire specification. It is included in the range. Moreover, it can also implement with the following forms.

(Modification 1)
The above-described electro-optical device is not limited to the liquid crystal device 100, and can be applied to, for example, a display device such as an organic EL (Electro Luminescence) device provided with a color filter or the like, or an electrophoretic device.

(Modification 2)
As described above, the liquid crystal device 100 is not limited to being used for the projection display device 1000. For example, a smartphone, a mobile phone, a head mounted display, an EVF (Electrical View Finder), a small projector, a mobile computer, a digital camera, a digital It can be used for various electronic devices such as a video camera, a display, an in-vehicle device, an audio device, an exposure device, and a lighting device.

  3a ... scanning line, 3b ... capacitance line, 3c ... lower light shielding film, 6a ... data line (second conductive film), 10 ... element substrate, 10a ... first substrate as substrate, 11 ... insulating layer, 11a ... Base insulating layer, 11b ... first interlayer insulating layer, 11c ... second interlayer insulating layer (first insulating layer), 11d ... third interlayer insulating layer (second insulating layer), 11e ... fourth interlayer insulating layer (third Insulating layer), 11f ... Passivation layer, 11g ... Gate insulating film, 14 ... Sealing material, 15 ... Liquid crystal layer as an electro-optic layer, 16 ... Capacitor element, 16a ... First capacitor electrode (first conductive film), 16b ... Second capacitance electrode (first conductive film), 16c ... dielectric layer, 18 ... light shielding part, 20 ... counter substrate, 20a ... second substrate, 22 ... data line driving circuit, 23 ... display region, 23R ... first Display area, 23G ... second display area, 23B ... third display area, 24 ... scanning line drive Circuit 25... Inspection circuit 26. Vertical conduction part 27 27 pixel electrode 27 a first pixel electrode 27 b second pixel electrode 27 c third pixel region 28 first alignment film 29 wiring 30 ... TFT, 30a ... Semiconductor layer, 30c ... Channel region, 30d ... Pixel electrode side source / drain region, 30d1 ... Pixel electrode side LDD region, 30g ... Gate electrode, 30s ... Data line side source / drain region, 30s1 ... Data line side LDD region, 31 ... common electrode, 32 ... second alignment film, 33 ... flattening layer, CNT51, 52, 53, 54 ... contact hole, 55 ... relay layer, 61 ... external connection terminal, 80 ... colored layer Color filter layer, 80R ... Red color filter layer, 80G ... Green color filter layer, 80B ... Blue color filter layer, 80a ... Color filter groove 80b ... Colorant, 80bR ... Red colorant, 80bG ... Green colorant, 80bB ... Blue colorant, 90 ... Light-shielding film, 91 ... Resist pattern, 100 ... Liquid crystal device, 1000 ... Projection display device, 1100 ... Polarized illumination device DESCRIPTION OF SYMBOLS 1101 ... Lamp unit 1102 ... Integrator lens 1103 ... Polarization conversion element, 1104, 1105 ... Dichroic mirror, 1106, 1107, 1108 ... Reflection mirror, 1201, 1202, 1203, 1204, 1205 ... Relay lens, 1206 ... Cross dichroic Prism, 1207 ... projection lens, 1210, 1220, 1230 ... liquid crystal light valve, 1300 ... screen.

Claims (10)

On the board
A first insulating layer;
A plurality of first conductive films provided on the first insulating layer;
A second insulating layer provided to cover the plurality of first conductive films;
A plurality of second conductive films provided on the second insulating layer;
A third insulating layer provided to cover the plurality of second conductive films;
A plurality of recesses located between the plurality of second conductive films in plan view, penetrating at least the third insulating layer and exposing the second insulating layer;
A first colored layer provided in at least one of the plurality of concave portions, a second colored layer provided in a concave portion adjacent to the first colored layer and one of the plurality of second conductive films, and
A light-shielding film provided on the second insulating layer and provided between the first colored layer and the second colored layer;
An electro-optic layer provided above the first colored layer, the second colored layer, and the light shielding film;
An electro-optical device comprising: The electro-optical device according to claim 1,
The electro-optical device, wherein the light shielding film is provided so as to straddle an edge of the first colored layer and an edge of the second colored layer in the insulating layer. The electro-optical device according to claim 1 or 2,
The electro-optical device, wherein the light shielding film is arranged in a floating state. An electro-optical device according to any one of claims 1 to 3,
The plurality of first conductive films and the plurality of second conductive films are arranged so as to overlap in a plan view,
The electro-optical device, wherein the plurality of concave portions penetrate at least the second insulating layer and the third insulating layer to expose the first insulating layer. The electro-optical device according to any one of claims 1 to 4,
The electro-optical device, wherein the electro-optical layer is a liquid crystal layer. A first insulating layer forming step of forming a first insulating layer on the substrate;
A first conductive film forming step of forming a plurality of first conductive films on the first insulating layer;
A second insulating layer forming step of forming a second insulating layer covering the plurality of first conductive films;
A second conductive film forming step of forming a plurality of second conductive layers on the second insulating layer;
A third insulating layer forming step of forming a third insulating layer covering the plurality of second conductive films;
A light shielding film forming step of forming a plurality of light shielding films on the third insulating layer at positions overlapping with the plurality of second conductive layers;
A recess forming step of forming a plurality of recesses between each of the plurality of light shielding films as seen in a plan view of the third insulating layer;
A colored layer forming step in which a first colored layer is formed in at least one of the plurality of recesses, and a second colored layer is formed in an adjacent recess across one of the plurality of second conductive films; An electro-optic layer forming step of forming an electro-optic layer above the colored layer, the second colored layer, and the light shielding film;
A method for manufacturing an electro-optical device. The method of manufacturing an electro-optical device according to claim 6,
The method of manufacturing an electro-optical device, wherein the recess forming step forms the plurality of recesses by etching the third insulating layer using the light shielding film as a mask. A method of manufacturing the electro-optical device according to claim 6 or 7,
A fourth insulating layer forming step of forming a fourth insulating layer on the third insulating layer including the light shielding film after the light shielding film forming step;
The recess forming step includes forming a resist pattern having a shape smaller in plan view than the light shielding film on the fourth insulating layer;
A first etching process step of etching the fourth insulating layer using the resist pattern as a mask;
A second etching process for etching the first insulating layer using the light shielding film as a mask;
A method for manufacturing an electro-optical device. A method for manufacturing an electro-optical device according to any one of claims 6 to 8,
In the electro-optical layer forming step, a liquid crystal layer is formed.   An electronic apparatus comprising the electro-optical device according to any one of claims 1 to 5.

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