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JP2013200369A - Vibration sensor for musical instrument, pickup saddle, and string musical instrument - Google Patents

Vibration sensor for musical instrument, pickup saddle, and string musical instrument Download PDF

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JP2013200369A
JP2013200369A JP2012067459A JP2012067459A JP2013200369A JP 2013200369 A JP2013200369 A JP 2013200369A JP 2012067459 A JP2012067459 A JP 2012067459A JP 2012067459 A JP2012067459 A JP 2012067459A JP 2013200369 A JP2013200369 A JP 2013200369A
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film
vibration sensor
electrode film
piezoelectric film
lead
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Miho Okubo
美保 大久保
Yasuo Okumiya
保郎 奥宮
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Yamaha Corp
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Yamaha Corp
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Abstract

PROBLEM TO BE SOLVED: To reduce noises of a vibration sensor for a musical instrument.SOLUTION: A vibration sensor for a musical instrument includes a substrate having, on at least a surface layer, a lead absorber layer having a thickness of 1 μm or more, a first electrode film bonded to the lead absorber layer and having a plurality of detection areas separated from each other to correspond to detection objects different from each other, a piezoelectric film composed of PZT and bonded to the first electrode film and the lead absorber layer exposed between the detection areas, and a second electrode film overlapped on the first electrode film and the piezoelectric film and bonded to the piezoelectric film.

Description

本発明は,楽器用振動センサ,ピックアップサドルおよび弦楽器に関する。   The present invention relates to a vibration sensor for a musical instrument, a pickup saddle, and a stringed musical instrument.

従来,ギター等の弦の振動を電気信号に変換するための振動センサを備えるピックアップサドルが知られている(例えば特許文献1)。特許文献1に記載されているように電極を弦毎に分離することにより,振動センサの出力に含まれる弦以外の振動成分,すなわちノイズを低減することができる。   Conventionally, a pickup saddle including a vibration sensor for converting vibration of a string such as a guitar into an electric signal is known (for example, Patent Document 1). By separating the electrodes for each string as described in Patent Document 1, vibration components other than the strings included in the output of the vibration sensor, that is, noise can be reduced.

特開2008−304558号公報JP 2008-304558 A

しかし,特許文献1に記載されているように弦毎に電極を分離したとしても,隣り合う電極の間に位置する圧電膜の領域も振動に応じた分極を生ずる。そして隣り合う電極の間に位置する圧電膜の領域の分極は振動センサの出力に表れる。したがって,弦毎に電極を分離したことによるノイズの抑制効果は限定的である。   However, even if the electrodes are separated for each string as described in Patent Document 1, the region of the piezoelectric film positioned between adjacent electrodes also undergoes polarization according to vibration. And the polarization of the area | region of the piezoelectric film located between adjacent electrodes appears in the output of a vibration sensor. Therefore, the effect of suppressing noise due to the separation of the electrodes for each string is limited.

本発明は上記問題に鑑みてなされたもので,楽器用振動センサのノイズを低減することを目的の1つとする。   The present invention has been made in view of the above problems, and an object thereof is to reduce noise of a vibration sensor for musical instruments.

上記課題を解決するため,本発明による楽器用振動センサは,少なくとも表層に厚さ1μm以上の鉛吸収層を含む基板と,前記鉛吸収層に結合し,互いに異なる検出対象に対応し互いに離間している複数の検出領域を有する第一電極膜と,前記複数の検出領域の間に露出した前記鉛吸収層と前記第一電極膜とに結合しているPZTからなる圧電膜と,前記第一電極膜と前記圧電膜とに重なり前記圧電膜に結合している第二電極膜と,を備える。
本発明によると,複数の検出領域の間のPZTから鉛吸収層に鉛が吸収されることによって,複数の検出領域の間においてPZTの圧電効果が下がる。これにより第一電極膜と第二電極膜の電位差に含まれる検出対象以外の振動成分が低減されるため,楽器用振動センサのノイズを低減することができる。
In order to solve the above-described problems, a vibration sensor for musical instrument according to the present invention includes a substrate including a lead absorption layer having a thickness of 1 μm or more on at least a surface layer and a lead absorption layer coupled to each other so as to correspond to different detection targets. A first electrode film having a plurality of detection regions, a piezoelectric film made of PZT bonded to the lead absorption layer and the first electrode film exposed between the plurality of detection regions, and the first A second electrode film overlapping the electrode film and the piezoelectric film and bonded to the piezoelectric film.
According to the present invention, the lead absorption layer absorbs lead from PZT between a plurality of detection regions, thereby reducing the piezoelectric effect of PZT between the plurality of detection regions. Thereby, since vibration components other than the detection target included in the potential difference between the first electrode film and the second electrode film are reduced, noise of the vibration sensor for musical instruments can be reduced.

鉛吸収層が厚いほどPZTからより多くの鉛を吸収できるため,前記基板の全部が前記鉛吸収層を構成しても良い。   Since the thicker the lead absorbing layer, the more lead can be absorbed from the PZT, the entire substrate may constitute the lead absorbing layer.

前記鉛吸収層はジルコニアであっても良い。ジルコニアはPZTを結晶化するためのアニールを実施しても十分な強度を保つ。   The lead absorbing layer may be zirconia. Zirconia maintains a sufficient strength even after annealing for crystallizing PZT.

図1Aは本発明の一実施例にかかる断面図である。図1Bは本発明の一実施例にかかる平面図である。図1Cは本発明の一実施例にかかる斜視図である。FIG. 1A is a cross-sectional view according to one embodiment of the present invention. FIG. 1B is a plan view according to one embodiment of the present invention. FIG. 1C is a perspective view according to one embodiment of the present invention. 図2Aは本発明の一実施例にかかる断面図である。図2Bは本発明の一実施例にかかる平面図である。FIG. 2A is a cross-sectional view according to one embodiment of the present invention. FIG. 2B is a plan view according to one embodiment of the present invention. 本発明の一実施例にかかる断面図である。It is sectional drawing concerning one Example of this invention. 本発明の一実施例にかかる断面図である。It is sectional drawing concerning one Example of this invention. 本発明の一実施例にかかる断面図である。It is sectional drawing concerning one Example of this invention.

以下,本発明の実施の形態を添付図面を参照しながら順に説明する。なお,各図において対応する構成要素には同一の符号が付され,重複する説明は省略される。   Hereinafter, embodiments of the present invention will be described in order with reference to the accompanying drawings. In addition, the same code | symbol is attached | subjected to the corresponding component in each figure, and the overlapping description is abbreviate | omitted.

1.第一実施例
図1Cは本発明にかかる弦楽器の一実施例としてのギター1000を示している。ギター1000は,振動センサ1を内蔵したピックアップサドル10を備え,弦81,82,83,84,85,86の振動を電気信号に変換して出力する。
1. First Embodiment FIG. 1C shows a guitar 1000 as an embodiment of a stringed instrument according to the present invention. The guitar 1000 includes a pickup saddle 10 with a built-in vibration sensor 1, and converts the vibrations of the strings 81, 82, 83, 84, 85, and 86 into electrical signals and outputs them.

図1Aにピックアップサドル10の構造を示す。ピックアップサドル10は弦81,82,83,84,85,86を支持するサドル本体80と,サドル本体80に収容された振動センサ1とを備えている。   FIG. 1A shows the structure of the pickup saddle 10. The pickup saddle 10 includes a saddle body 80 that supports strings 81, 82, 83, 84, 85, and 86, and a vibration sensor 1 accommodated in the saddle body 80.

振動センサ1は,弦81,82,83,84,85,86の振動を検出するためのセンサであって,スクリーン印刷技術,半導体製造技術等の薄膜形成技術を応用して製造される積層構造体である。したがって振動センサ1を構成している基板100,第一電極膜11,圧電膜12は接着剤等を用いずに直接結合により一体化している。振動センサ1の外形寸法は,サドル本体80の形状に合わせて任意に設定することができる。例えば,6本の弦振動を検出する振動センサ1の厚さは0.1mm〜3mm,振動センサ1の幅は1mm〜8mm,振動センサ1の長さは65mm〜75mm程度とすればよい。   The vibration sensor 1 is a sensor for detecting vibrations of the strings 81, 82, 83, 84, 85, 86, and is a laminated structure manufactured by applying thin film forming technology such as screen printing technology and semiconductor manufacturing technology. Is the body. Accordingly, the substrate 100, the first electrode film 11, and the piezoelectric film 12 constituting the vibration sensor 1 are integrated by direct bonding without using an adhesive or the like. The external dimensions of the vibration sensor 1 can be arbitrarily set according to the shape of the saddle body 80. For example, the thickness of the vibration sensor 1 for detecting six string vibrations may be 0.1 mm to 3 mm, the width of the vibration sensor 1 may be 1 mm to 8 mm, and the length of the vibration sensor 1 may be about 65 mm to 75 mm.

基板100は例えば厚さ0.2mmの板状部材である。基板100には,鉛を吸収する性質と,楽器演奏時に加わる荷重に耐える耐久性と,圧電膜12に対する熱処理などの製造工程における熱負荷に耐える耐熱性が求められる。例えば,セラミックス,ガラス,ガラスセラミックス等の鉛を吸収する素材が基板100の材料になり得る。基板100の材質としては特にジルコニア(ZrO),例えばイットリアを含有する部分安定化ジルコニアが好適である。ジルコニアは耐熱性が高いため,PZTからなる圧電膜12を結晶化するための熱処理に十分耐えることができる。またジルコニアで基板100を形成する場合には,基板100の靭性が高くなるため,耐久性が高くなるとともに,振動センサ1を曲げた状態で使用することも可能になる。 The substrate 100 is a plate-like member having a thickness of 0.2 mm, for example. The substrate 100 is required to have a property of absorbing lead, durability to withstand loads applied during musical instrument performance, and heat resistance to withstand thermal loads in manufacturing processes such as heat treatment of the piezoelectric film 12. For example, a material that absorbs lead, such as ceramics, glass, and glass ceramics, can be the material of the substrate 100. The material of the substrate 100 is particularly preferably zirconia (ZrO 2 ), for example, partially stabilized zirconia containing yttria. Since zirconia has high heat resistance, it can sufficiently withstand heat treatment for crystallizing the piezoelectric film 12 made of PZT. Further, when the substrate 100 is formed of zirconia, the toughness of the substrate 100 is increased, so that the durability is enhanced and the vibration sensor 1 can be used in a bent state.

基板100の上面に重ねられている第一電極膜11は,例えば厚さ2μmの白金(Pt)等の金属からなる。第一電極膜11は基板100の上面に直接結合している。第一電極膜11は,互いに離間している検出領域11b,11c,11d,11e,11f,11gを有する。検出領域11b,11c,11d,11e,11f,11gはそれぞれの振動を検出する対象である弦81,82,83,84,85,86と対応する位置にある。具体的には弦81から最も近い位置に検出領域11bがあり,弦82から最も近い位置に検出領域11cがあり,弦83から最も近い位置に検出領域11dがあり,弦84から最も近い位置に検出領域11eがあり,弦85から最も近い位置に検出領域11fがあり,弦86から最も近い位置に検出領域11gがある。検出領域11b,11c,11d,11e,11f,11gの間からは基板100が露出している。検出領域11b,11c,11d,11e,11f,11gは線状の導線部11xによって接続されている。導線部11xの端部は外部電極領域11aに接続している。すなわち,検出領域11b,11c,11d,11e,11f,11gは導線部11xによって外部電極領域11aに電気的に接続されている。   The first electrode film 11 stacked on the upper surface of the substrate 100 is made of a metal such as platinum (Pt) having a thickness of 2 μm, for example. The first electrode film 11 is directly bonded to the upper surface of the substrate 100. The first electrode film 11 has detection regions 11b, 11c, 11d, 11e, 11f, and 11g that are separated from each other. The detection areas 11b, 11c, 11d, 11e, 11f, and 11g are located at positions corresponding to the strings 81, 82, 83, 84, 85, and 86 that are targets for detecting the respective vibrations. Specifically, the detection region 11b is located closest to the string 81, the detection region 11c is located closest to the string 82, the detection region 11d is located closest to the string 83, and is located closest to the string 84. There is a detection area 11e, a detection area 11f is located closest to the string 85, and a detection area 11g is located closest to the string 86. The substrate 100 is exposed between the detection areas 11b, 11c, 11d, 11e, 11f, and 11g. The detection regions 11b, 11c, 11d, 11e, 11f, and 11g are connected by a linear conducting wire portion 11x. The end portion of the conducting wire portion 11x is connected to the external electrode region 11a. That is, the detection regions 11b, 11c, 11d, 11e, 11f, and 11g are electrically connected to the external electrode region 11a by the conductive wire portion 11x.

第一電極膜11の上面に重ねられている圧電膜12は,例えば厚さ35μmのPZT(チタン酸ジルコン酸鉛)からなる。検出領域11b,11c,11d,11e,11f,11gの間から基板100が露出しているため,圧電膜12は検出領域11b,11c,11d,11e,11f,11gの間において基板100に直接結合している。したがって,圧電膜12を結晶化するアニール工程において,検出領域11b,11c,11d,11e,11f,11gの間において圧電膜12から基板100に鉛が吸収される。このため検出領域11b,11c,11d,11e,11f,11gの間の領域100a,100b,100c,100d,100e,100f,100gにおいて基板100は鉛を含有する。一方、第一電極膜11は、鉛のバリア層として機能する。したがって圧電膜12の鉛含有量は検出領域11b,11c,11d,11e,11f,11gの間の領域が他の領域に比べて低くなっている。   The piezoelectric film 12 superimposed on the upper surface of the first electrode film 11 is made of, for example, PZT (lead zirconate titanate) having a thickness of 35 μm. Since the substrate 100 is exposed from between the detection regions 11b, 11c, 11d, 11e, 11f, and 11g, the piezoelectric film 12 is directly coupled to the substrate 100 between the detection regions 11b, 11c, 11d, 11e, 11f, and 11g. doing. Therefore, in the annealing step for crystallizing the piezoelectric film 12, lead is absorbed from the piezoelectric film 12 to the substrate 100 between the detection regions 11b, 11c, 11d, 11e, 11f, and 11g. Therefore, the substrate 100 contains lead in the regions 100a, 100b, 100c, 100d, 100e, 100f, and 100g between the detection regions 11b, 11c, 11d, 11e, 11f, and 11g. On the other hand, the first electrode film 11 functions as a lead barrier layer. Therefore, the lead content of the piezoelectric film 12 is lower in the region between the detection regions 11b, 11c, 11d, 11e, 11f, and 11g than in the other regions.

基板100,第一電極膜11および圧電膜12は第二電極膜15によって覆われている。第二電極膜15は,ニッケル系の導電性塗料,導電性ゴム等からなる。刷毛,スプレー,浸漬等の方法で第二電極膜15を形成することができる。第二電極膜15は第一電極膜11と圧電膜12に重なっているため,第一電極膜11と圧電膜12と第二電極膜15とによって圧電素子が構成される。第二電極膜15を接地することにより,第二電極膜15を電磁波シールドとして機能させて振動センサ1のS/Nをさらに高めることができる。   The substrate 100, the first electrode film 11 and the piezoelectric film 12 are covered with the second electrode film 15. The second electrode film 15 is made of nickel-based conductive paint, conductive rubber, or the like. The second electrode film 15 can be formed by a method such as brushing, spraying or dipping. Since the second electrode film 15 overlaps the first electrode film 11 and the piezoelectric film 12, the first electrode film 11, the piezoelectric film 12, and the second electrode film 15 constitute a piezoelectric element. By grounding the second electrode film 15, the S / N of the vibration sensor 1 can be further increased by causing the second electrode film 15 to function as an electromagnetic wave shield.

振動センサ1は同軸ケーブル7によって外部回路に接続される。同軸ケーブル7は,第一導線73と第二導線71と絶縁層72とを備えている。同軸ケーブル7の第一導線73は第一電極膜11の外部電極領域11aに導電性接着剤13によって接合される。そして同軸ケーブル7の第二導線71は第二電極膜15と直接接合される。外部電極領域11a,導電性接着剤13および第一導線73と,第二電極膜15とを絶縁するために,第一電極膜11の外部電極領域11aの周囲は絶縁性の熱収縮チューブ14によって覆われる。熱収縮チューブ14は同軸ケーブル7が振動センサ1より外れにくくするために固定するものでもあり、当該ケーブルと当該センサの周囲を固定する効果があれば、テープで周囲を覆ったり、接着材で周囲を覆ったりしてもよい。このように同軸ケーブル7に接続された振動センサ1はサドル本体80の凹部に収容され,凹部の隙間は充填剤で埋められる。   The vibration sensor 1 is connected to an external circuit by a coaxial cable 7. The coaxial cable 7 includes a first conducting wire 73, a second conducting wire 71, and an insulating layer 72. The first conductive wire 73 of the coaxial cable 7 is joined to the external electrode region 11 a of the first electrode film 11 by the conductive adhesive 13. The second conducting wire 71 of the coaxial cable 7 is directly joined to the second electrode film 15. In order to insulate the external electrode region 11a, the conductive adhesive 13 and the first conductor 73 from the second electrode film 15, the periphery of the external electrode region 11a of the first electrode film 11 is insulated by an insulating heat shrink tube 14. Covered. The heat-shrinkable tube 14 is also fixed so that the coaxial cable 7 is less likely to come off from the vibration sensor 1. If there is an effect of fixing the cable and the periphery of the sensor, the heat-shrinkable tube 14 is covered with tape or surrounded by an adhesive. May be covered. Thus, the vibration sensor 1 connected to the coaxial cable 7 is accommodated in the recess of the saddle body 80, and the gap of the recess is filled with a filler.

本実施例によると,第一電極膜11の検出領域11b,11c,11d,11e,11f,11gの間において圧電膜12の鉛含有量が低くなるため,第一電極膜11の検出領域11b,11c,11d,11e,11f,11gの間において圧電膜12の圧電効果が低くなる。したがって,振動センサ1の出力のうち,検出領域11b,11c,11d,11e,11f,11gの間における圧電膜12の分極に対応する成分が低減される。すなわち,圧電膜12自体の感度が,検出領域11b,11c,11d,11e,11f,11gの真上において高く,検出領域11b,11c,11d,11e,11f,11gの間において低い。一方,圧電膜12の局所領域に加わる圧力のうちの弦81,82,83,84,85,86の振動にともなう成分は,弦81,82,83,84,85,86に近い領域ほど高くなる。すなわち,圧電膜12の分極現象を局所的にみると,弦81,82,83,84,85,86に近い領域ほど弦振動によって分極が引き起こされることになり,弦81,82,83,84,85,86から遠い領域ほど弦振動以外の振動(例えばギター1000の響板87の振動)によっても分極が引き起こされることになる。振動センサ1は,圧電膜12の感度が高い領域を弦81,82,83,84,85,86に近づけて配置し,圧電膜12の弦81,82,83,84,85,86から遠い領域で圧電膜12の感度を下げているため,高いS/Nで弦81,82,83,84,85,86の振動を検出することができる。   According to the present embodiment, the lead content of the piezoelectric film 12 is lowered between the detection regions 11b, 11c, 11d, 11e, 11f, and 11g of the first electrode film 11, so that the detection regions 11b, The piezoelectric effect of the piezoelectric film 12 becomes low between 11c, 11d, 11e, 11f, and 11g. Therefore, the component corresponding to the polarization of the piezoelectric film 12 between the detection regions 11b, 11c, 11d, 11e, 11f, and 11g in the output of the vibration sensor 1 is reduced. That is, the sensitivity of the piezoelectric film 12 itself is high immediately above the detection regions 11b, 11c, 11d, 11e, 11f, and 11g, and is low between the detection regions 11b, 11c, 11d, 11e, 11f, and 11g. On the other hand, of the pressure applied to the local region of the piezoelectric film 12, the component accompanying the vibration of the strings 81, 82, 83, 84, 85, 86 is higher in the region closer to the strings 81, 82, 83, 84, 85, 86. Become. That is, when the polarization phenomenon of the piezoelectric film 12 is viewed locally, the region closer to the strings 81, 82, 83, 84, 85, 86 is polarized by the string vibration, and the strings 81, 82, 83, 84 , 85, 86, the region farther away from the string vibration (for example, vibration of the sound board 87 of the guitar 1000) causes polarization. In the vibration sensor 1, the region where the sensitivity of the piezoelectric film 12 is high is arranged close to the strings 81, 82, 83, 84, 85, 86 and is far from the strings 81, 82, 83, 84, 85, 86 of the piezoelectric film 12. Since the sensitivity of the piezoelectric film 12 is lowered in the region, vibrations of the strings 81, 82, 83, 84, 85, 86 can be detected with high S / N.

2.第二実施例
図2Aは本発明の第二実施例としての振動センサ2の断面構造を示している。図2Bは振動センサ2の内部構造を示している。
図2Bに示すように,第二電極膜16は圧電膜12の上面と同じか圧電膜12の上面よりも狭い領域に形成され,第一電極膜11および圧電膜12と重なる。第二電極膜16の端部には導線75が導電性接着剤13によって接合される。第二電極膜16は金(Au),アルミ(Al)等の金属からなる。第二電極膜16は圧電膜12の上面に直接結合している。
2. Second Embodiment FIG. 2A shows a cross-sectional structure of a vibration sensor 2 as a second embodiment of the present invention. FIG. 2B shows the internal structure of the vibration sensor 2.
As shown in FIG. 2B, the second electrode film 16 is formed in a region that is the same as the upper surface of the piezoelectric film 12 or narrower than the upper surface of the piezoelectric film 12, and overlaps the first electrode film 11 and the piezoelectric film 12. A conductive wire 75 is joined to the end portion of the second electrode film 16 by the conductive adhesive 13. The second electrode film 16 is made of a metal such as gold (Au) or aluminum (Al). The second electrode film 16 is directly bonded to the upper surface of the piezoelectric film 12.

第一電極膜11の導線部11xは圧電膜12の外側にはみ出している。第一電極膜11の外部電極領域11aには接地電位の導線75が導電性接着剤13によって接合される。導線部11xは圧電膜12および第二電極膜16と重なっていないため,導線部11x自体と圧電膜12とが電荷を受け渡すことはない。このため振動センサ2は,第一実施例の振動センサ1に比べてさらに高いS/Nで弦81,82,83,84,85,86の振動を検出することができる。   The conducting wire portion 11 x of the first electrode film 11 protrudes outside the piezoelectric film 12. A conductive wire 75 having a ground potential is bonded to the external electrode region 11 a of the first electrode film 11 by the conductive adhesive 13. Since the conducting wire portion 11x does not overlap the piezoelectric film 12 and the second electrode film 16, the conducting wire portion 11x itself and the piezoelectric film 12 do not transfer charges. Therefore, the vibration sensor 2 can detect the vibrations of the strings 81, 82, 83, 84, 85, 86 with a higher S / N than the vibration sensor 1 of the first embodiment.

第二電極膜16の上面に重ねられている絶縁膜17は,第二電極膜16の端部を除いた上面全体を覆っている。絶縁膜17は,例えば厚さ40μmのポリイミド等の絶縁材料からなる。絶縁膜17は第二電極膜16の上面に直接結合している。   The insulating film 17 superimposed on the upper surface of the second electrode film 16 covers the entire upper surface excluding the end of the second electrode film 16. The insulating film 17 is made of an insulating material such as polyimide having a thickness of 40 μm, for example. The insulating film 17 is directly bonded to the upper surface of the second electrode film 16.

絶縁膜17の上面に重ねられているシールド膜18は,例えば厚さ2μmのアルミニウム等の導電性材料からなる。シールド膜18は絶縁膜17の上面の大部分を覆い,接地される第一電極膜11のシールド膜接続領域11hに結合している。このためシールド膜18は電磁シールドとして機能する。シールド膜18は,絶縁膜17,圧電膜12および第一電極膜11に直接結合している。   The shield film 18 overlaid on the upper surface of the insulating film 17 is made of a conductive material such as aluminum having a thickness of 2 μm, for example. The shield film 18 covers most of the upper surface of the insulating film 17 and is coupled to the shield film connection region 11h of the first electrode film 11 to be grounded. For this reason, the shield film 18 functions as an electromagnetic shield. The shield film 18 is directly coupled to the insulating film 17, the piezoelectric film 12, and the first electrode film 11.

3.第三実施例
図3は本発明の第三実施例としての振動センサ3の断面構造を示している。振動センサ3の基板99は,表層に鉛吸収層98を含む。鉛吸収層98は,ジルコニアの他,セラミックス,ガラス,ガラスセラミックス等の鉛を吸収する素材であればよい。基板99の鉛吸収層98以外の部分は鉛を吸収しない素材で構成することができる。検出領域11b,11c,11d,11e,11f,11gの間において圧電膜12の感度を効果的に低下させるためには,鉛吸収層98の厚さは1μm以上とする必要があり,10μm以上とすることが好ましい。
3. Third Embodiment FIG. 3 shows a sectional structure of a vibration sensor 3 as a third embodiment of the present invention. The substrate 99 of the vibration sensor 3 includes a lead absorbing layer 98 on the surface layer. The lead absorption layer 98 may be any material that absorbs lead, such as ceramics, glass, glass ceramics, in addition to zirconia. Portions other than the lead absorbing layer 98 of the substrate 99 can be made of a material that does not absorb lead. In order to effectively reduce the sensitivity of the piezoelectric film 12 between the detection regions 11b, 11c, 11d, 11e, 11f, and 11g, the thickness of the lead absorbing layer 98 must be 1 μm or more, and 10 μm or more. It is preferable to do.

4.製造方法
次に,振動センサ2の製造方法を図4に基づいて説明する。
はじめに図4Aに示すように基板100の表面に第一電極膜11を形成する。第一電極膜11はスクリーン印刷法,スパッタリング法等の薄膜形成技術によって形成される。以下、パターニング手法が必要な場合は随時公知の技術を用いるものとする。
4). Manufacturing Method Next, a manufacturing method of the vibration sensor 2 will be described with reference to FIG.
First, as shown in FIG. 4A, the first electrode film 11 is formed on the surface of the substrate 100. The first electrode film 11 is formed by a thin film forming technique such as a screen printing method or a sputtering method. Hereinafter, when a patterning method is required, a known technique is used as needed.

次に図4Bに示すように第一電極膜11の上に圧電膜12を形成する。圧電膜12はゾルゲル法,スパッタリング法,CVD法,スクリーン印刷法等の薄膜形成技術を用いて形成される。その後に圧電膜12を結晶化するためのアニール工程を約1200℃の温度条件で実施する。アニール工程では圧電膜12から基板100に鉛が吸収される。1200℃のアニールを実施する場合,圧電膜12との界面から10μmの深さまでジルコニアからなる基板100に鉛が拡散する。このようにPZTからなる圧電膜12を結晶化するためのアニール工程を経ると,鉛吸収層は圧電膜12との界面から10μmの深さまで鉛を取り込む。したがって,PZTから鉛を吸収できる鉛吸収層の厚さを10μm以上にすることが好ましい。スクリーン印刷法によって圧電膜12を形成することによって圧電膜12の端面を傾斜させることができる。スクリーン印刷法を用いて圧電膜12の端面を傾斜させると,圧電膜12の端面と第一電極膜11または基板100の上面とを下地面として形成される層の段差被覆性が向上し密着強度が高まる。   Next, as shown in FIG. 4B, the piezoelectric film 12 is formed on the first electrode film 11. The piezoelectric film 12 is formed using a thin film forming technique such as a sol-gel method, a sputtering method, a CVD method, or a screen printing method. Thereafter, an annealing step for crystallizing the piezoelectric film 12 is performed under a temperature condition of about 1200 ° C. In the annealing process, lead is absorbed from the piezoelectric film 12 into the substrate 100. When annealing at 1200 ° C. is performed, lead diffuses into the substrate 100 made of zirconia from the interface with the piezoelectric film 12 to a depth of 10 μm. When the annealing process for crystallizing the piezoelectric film 12 made of PZT is thus performed, the lead absorbing layer takes in lead to a depth of 10 μm from the interface with the piezoelectric film 12. Therefore, it is preferable that the thickness of the lead absorption layer capable of absorbing lead from PZT is 10 μm or more. By forming the piezoelectric film 12 by a screen printing method, the end face of the piezoelectric film 12 can be inclined. When the end face of the piezoelectric film 12 is tilted using the screen printing method, the step coverage of the layer formed using the end face of the piezoelectric film 12 and the upper surface of the first electrode film 11 or the substrate 100 as a base surface is improved, and the adhesion strength is increased. Will increase.

次に図4Cに示すように圧電膜12の上に第二電極膜16を形成する。第二電極膜16はスクリーン印刷法,スパッタリング法等の薄膜形成技術によって形成される。   Next, as shown in FIG. 4C, a second electrode film 16 is formed on the piezoelectric film 12. The second electrode film 16 is formed by a thin film forming technique such as a screen printing method or a sputtering method.

次に図4Dに示すように第二電極膜16の上に絶縁膜17を形成する。絶縁膜17は,スクリーン印刷法,スピンコート法,ラミネート法,CVD法,スパッタリング法,蒸着法,蒸着重合法等の薄膜形成技術によって形成される。   Next, as shown in FIG. 4D, an insulating film 17 is formed on the second electrode film 16. The insulating film 17 is formed by a thin film forming technique such as a screen printing method, a spin coating method, a laminating method, a CVD method, a sputtering method, a vapor deposition method, or a vapor deposition polymerization method.

次に図4Eに示すように絶縁膜17の上にシールド膜18を形成する。シールド膜18はスパッタリング法,CVD法,スクリーン印刷法,メッキ法等の薄膜形成技術によって形成される。   Next, as shown in FIG. 4E, a shield film 18 is formed on the insulating film 17. The shield film 18 is formed by a thin film forming technique such as sputtering, CVD, screen printing, or plating.

その後,基板100をダイサーで分断すると振動センサ2が完成する。なお,圧電膜12を形成する工程まで,振動センサ2と振動センサ1の製造方法は共通である。また,振動センサ3を製造する場合には,基板上に第一電極膜11を形成する前に基板に鉛吸収層を形成する工程を追加すればよい。   Thereafter, when the substrate 100 is divided by a dicer, the vibration sensor 2 is completed. The manufacturing method of the vibration sensor 2 and the vibration sensor 1 is the same up to the step of forming the piezoelectric film 12. Further, when manufacturing the vibration sensor 3, a step of forming a lead absorption layer on the substrate may be added before the first electrode film 11 is formed on the substrate.

5.他の実施形態
尚,本発明の技術的範囲は,上述した実施例に限定されるものではなく,本発明の要旨を逸脱しない範囲内において種々変更を加え得ることは勿論である。
5. Other Embodiments The technical scope of the present invention is not limited to the above-described embodiments, and it goes without saying that various modifications can be made without departing from the scope of the present invention.

例えば,図5に示す振動センサ4のように,第一実施例の振動センサの圧電膜12の表面と基板100の背面とに導電膜61,62を形成して接地することにより電磁シールド効果を高めても良い。   For example, like the vibration sensor 4 shown in FIG. 5, the conductive film 61, 62 is formed on the surface of the piezoelectric film 12 and the back surface of the substrate 100 of the vibration sensor of the first embodiment and grounded, thereby providing an electromagnetic shielding effect. May be raised.

また例えば,第一導電膜の検出領域は矩形でも円形でもどのような形でも良い。また第一導電膜を形成する際に,検出領域と検出対象との位置合わせを容易にするために第一導電膜によってアライメントマークを形成しても良い。このようなアライメントマークを振動センサの外部に露出させることによって弦等の検出対象と第一導電膜の検出領域との位置合わせが容易になる。   For example, the detection region of the first conductive film may be rectangular, circular, or any shape. Further, when forming the first conductive film, an alignment mark may be formed by the first conductive film in order to facilitate alignment between the detection region and the detection target. By exposing such an alignment mark to the outside of the vibration sensor, it is easy to align the detection target such as a string and the detection region of the first conductive film.

また,ヴァイオリン,チェロ等の他の弦楽器に用いるピックアップサドルに本発明を適用できることはもちろんであるし、管楽器、打楽器、鍵盤楽器等の振動センサに本発明を適用することもできる。また振動センサの寸法はピックアップサドルや楽器本体の寸法に応じて任意に設定することができる。さらに、弦などの検出対象の数やそれらが配置される間隔に応じて、振動センサにおける検出領域の数やその間隔を任意に設定することができる。   In addition, the present invention can be applied to pick-up saddles used for other stringed instruments such as violins and cellos, and can also be applied to vibration sensors such as wind instruments, percussion instruments, and keyboard instruments. The dimensions of the vibration sensor can be arbitrarily set according to the dimensions of the pickup saddle and the instrument body. Furthermore, according to the number of detection objects, such as a string, and the space | interval at which they are arrange | positioned, the number of the detection areas in a vibration sensor and its space | interval can be set arbitrarily.

1…振動センサ,2…振動センサ,3…振動センサ,4…振動センサ,7…同軸ケーブル,10…ピックアップサドル,11…第一電極膜,11a…外部電極領域,11b,11c,11d,11e,11f,11g…検出領域,11x…導線部,12…圧電膜,13…導電性接着剤,14…熱収縮チューブ,15…第二電極膜,16…第二電極膜,17…絶縁膜,18…シールド膜,61…導電膜,71…第二導線,72…絶縁層,73…第一導線,75…導線,80…サドル本体,81,82,83,84,85,86…弦,87…響板,98…鉛吸収層,99…基板,100…基板,1000…ギター DESCRIPTION OF SYMBOLS 1 ... Vibration sensor, 2 ... Vibration sensor, 3 ... Vibration sensor, 4 ... Vibration sensor, 7 ... Coaxial cable, 10 ... Pick-up saddle, 11 ... First electrode film, 11a ... External electrode area | region, 11b, 11c, 11d, 11e , 11f, 11g ... detection region, 11x ... conductive wire part, 12 ... piezoelectric film, 13 ... conductive adhesive, 14 ... heat shrinkable tube, 15 ... second electrode film, 16 ... second electrode film, 17 ... insulating film, DESCRIPTION OF SYMBOLS 18 ... Shield film | membrane, 61 ... Conductive film, 71 ... 2nd conducting wire, 72 ... Insulating layer, 73 ... 1st conducting wire, 75 ... Conducting wire, 80 ... Saddle main body, 81, 82, 83, 84, 85, 86 ... String 87 ... sound board, 98 ... lead absorption layer, 99 ... substrate, 100 ... substrate, 1000 ... guitar

Claims (5)

少なくとも表層に厚さ1μm以上の鉛吸収層を含む基板と,
前記鉛吸収層に結合し,互いに異なる検出対象に対応し互いに離間している複数の検出領域を有する第一電極膜と,
前記複数の検出領域の間に露出した前記鉛吸収層と前記第一電極膜とに結合しているPZTからなる圧電膜と,
前記第一電極膜と前記圧電膜とに重なり前記圧電膜に結合している第二電極膜と,
を備える楽器用振動センサ。
A substrate including a lead absorbing layer having a thickness of 1 μm or more on at least a surface layer;
A first electrode film having a plurality of detection regions coupled to the lead absorbing layer and corresponding to different detection targets and spaced apart from each other;
A piezoelectric film made of PZT bonded to the lead absorbing layer and the first electrode film exposed between the plurality of detection regions;
A second electrode film overlapping the first electrode film and the piezoelectric film and bonded to the piezoelectric film;
A vibration sensor for musical instruments.
前記基板の全部が前記鉛吸収層を構成する,
請求項1に記載の楽器用振動センサ。
All of the substrate constitutes the lead absorbing layer;
The vibration sensor for musical instruments according to claim 1.
前記鉛吸収層はジルコニアからなる,
請求項1又は2に記載の楽器用振動センサ。
The lead absorbing layer is made of zirconia,
The vibration sensor for musical instruments according to claim 1 or 2.
前記検出対象としての弦を支持するサドルと,
前記サドルに固定された請求項1から3のいずれか一項に記載の楽器用振動センサと,
を備えるピックアップサドル。
A saddle supporting a string as the detection target;
The instrument vibration sensor according to any one of claims 1 to 3, which is fixed to the saddle,
Pickup saddle with
前記検出対象としての弦と,
請求項4に記載のピックアップサドルと,
を備える弦楽器。
A string as the detection target;
A pickup saddle according to claim 4;
A stringed instrument.
JP2012067459A 2012-03-23 2012-03-23 Vibration sensor for musical instrument, pickup saddle, and string musical instrument Pending JP2013200369A (en)

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JP2012067459A JP2013200369A (en) 2012-03-23 2012-03-23 Vibration sensor for musical instrument, pickup saddle, and string musical instrument

Publications (1)

Publication Number Publication Date
JP2013200369A true JP2013200369A (en) 2013-10-03

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Country Link
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