JP2013247128A - Thermal treatment apparatus, and method of determining presence or absence of poor shape of treated substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To detect poor shape of a substrate, e.g., loss or cracking, occurred by heating treatment of the substrate.SOLUTION: The thermal treatment apparatus includes a heating section provided in the conveyance path of a substrate and performing the heating treatment of the substrate housed in a processing chamber, a conveyance section for conveying the substrate subjected to heating treatment in the heating section to the downstream side thereof along the conveyance path, a measurement section for outputting a measurement signal dependent on the spatial length of a measurement region, on the downstream side of the heating section out of the conveyance path, through which the substrate has passed while being conveyed by the conveyance section, and a determination section for determining presence or absence of poor shape of the substrate based on the measurement signal.

Description

  The present invention relates to a heat treatment technique for heating a semiconductor wafer, a glass substrate or the like (hereinafter simply referred to as “substrate”) accommodated in a processing chamber, and more particularly, to a technique for determining the quality of a substrate.

  One of the processes for manufacturing semiconductor components and the like is an ion implantation process for implanting ions such as boron and arsenic into a silicon wafer (substrate). Heat treatment is performed for the purpose of ion activation of the substrate after such ion implantation. The heat treatment for ion activation is performed by heating (annealing) the substrate to a temperature of about 1000 ° C. to 1100 ° C., for example.

  In a heat treatment apparatus that performs such heat treatment, defects such as defects or cracks may occur in the substrate due to the heat treatment. For example, in flash annealing using a flash lamp for heat treatment, light of a huge energy is instantaneously irradiated during flash heating, or the substrate is lifted by a quartz arm that is cooler than the heat-treated substrate. Due to the impact caused by the change, a defective shape such as a chip or a crack occurs in the substrate. If the substrate is scratched or has particles attached, processing defects are more likely to occur.

  Therefore, the heat treatment apparatus of Patent Document 1 uses a light source and a light receiving unit provided on the upstream side of a heat treatment unit that performs heat treatment of a substrate that has been carried in, for a substrate being transported to the heat treatment unit. It is determined whether there is presence / absence or adhesion of particles. The apparatus measures the spectrum by receiving light reflected from the entire surface of the substrate by irradiating the substrate with light from the light source while transporting the substrate, until the substrate is carried into the heat treatment unit, By comparing with a spectrum measured in advance in the same manner from a normal substrate, whether the substrate is good or bad, such as the presence or absence of scratches or the presence or absence of adhesion of particles, is determined.

JP 2007-292725 A

  However, the defect or crack of the substrate in the heat treatment portion occurs even when the substrate before the processing has no scratch or particle adhesion. For this reason, the apparatus of Patent Document 1 has a problem that even if a substrate that has not had an abnormality before the heat treatment has a defective shape such as a defect or a crack in the heat treatment section, the defective shape cannot be detected.

  The present invention has been made to solve these problems, and an object of the present invention is to provide a technique capable of detecting a substrate shape defect such as a defect or a crack generated by a heat treatment in a heat treatment apparatus for heating the substrate. .

  In order to solve the above-described problem, a heat treatment apparatus according to a first aspect is a heat treatment apparatus that heats a substrate by irradiating the substrate with light, and is provided in a transfer path of the substrate and is disposed in a processing chamber. A heating unit that performs heat treatment on the accommodated substrate, a transport unit that transports the substrate heat-treated by the heating unit to the downstream side of the heating unit along the transport path, and Among them, a measurement region on the downstream side of the heating unit, a measurement unit that outputs a measurement signal according to a spatial length of the substrate transported to the transport unit, and a measurement region of the substrate based on the measurement signal A determination unit that determines the presence or absence of a shape defect.

  A heat treatment apparatus according to a second aspect is the heat treatment apparatus according to the first aspect, wherein a cooling unit that cools the substrate heat-treated by the heating unit on the downstream side of the heating unit in the transport path. The measurement region is provided between the heating unit and the cooling unit.

  The heat treatment apparatus according to the third aspect is the heat treatment apparatus according to the second aspect, wherein the measurement region is provided at an outlet portion of the heating unit.

  A heat treatment apparatus according to a fourth aspect is the heat treatment apparatus according to the first aspect, wherein a cooling unit that cools the substrate heat-treated by the heating unit on the downstream side of the heating unit in the transport path. The measurement area is provided on the downstream side of the cooling unit in the transport path.

  A heat treatment apparatus according to a fifth aspect is the heat treatment apparatus according to any one of the first to fourth aspects, wherein the transfer unit is configured to fix the substrate when the substrate passes through the measurement region. The determination unit determines whether or not the substrate has a shape defect based on the time length of the measurement signal.

  A heat treatment apparatus according to a sixth aspect is the heat treatment apparatus according to any one of the first to fifth aspects, wherein the measurement unit includes a plurality of different measurement regions provided in a direction crossing the transport path. The plurality of sensors respectively correspond to a plurality of spatial lengths through which the substrate has been transported to the transport unit and passed through the plurality of measurement regions, as the measurement signal. A plurality of measurement signals are output, and the determination unit determines whether or not the substrate has a shape defect based on the plurality of measurement signals.

  A heat treatment apparatus according to a seventh aspect is the heat treatment apparatus according to the sixth aspect, wherein the determination unit includes a plurality of measurement regions through which a normal substrate is transferred to the transfer unit and passes respectively. Whether or not the substrate has a shape defect is determined based on a plurality of determination criteria set in accordance with the spatial length.

  A heat treatment apparatus according to an eighth aspect is the heat treatment apparatus according to any one of the first to seventh aspects, wherein the heating unit includes a flash lamp and is provided for the substrate accommodated in the processing chamber. The substrate is heated by irradiating flash light from the flash lamp.

  A determination method according to a ninth aspect is a method for determining whether or not a substrate has a defective shape in a heat treatment apparatus that heats the substrate by irradiating the substrate with light, and the heat treatment apparatus is provided in a transport path of the substrate. A heating unit that heat-treats the substrate housed in the processing chamber, and a transport unit that transports the substrate heat-treated by the heating unit to the downstream side of the heating unit along the transport path And the determination method measures a measurement signal corresponding to a spatial length that the substrate has been transported and passed through the transport unit in a measurement region on the downstream side of the heating unit in the transport path. And determining whether or not the substrate is defective based on the measurement signal.

  According to the invention according to any of the first to ninth aspects, the substrate has a defective shape based on the measurement signal corresponding to the spatial length that the substrate has passed through the measurement region on the downstream side of the heating unit in the transport path. The presence or absence of is determined. Accordingly, it is possible to detect substrate shape defects such as defects or cracks generated by the heat treatment of the substrate.

It is a top view which shows an example of the whole structure of the heat processing apparatus which concerns on embodiment. It is a longitudinal cross-sectional view which shows an example of a structure of the heat processing part of the heat processing apparatus of FIG. It is a figure which shows the board | substrate currently conveyed passing through the measurement area | region of a sensor array. It is a figure which shows the board | substrate currently conveyed passing through the measurement area | region of a sensor array. It is a figure which illustrates the measurement signal of a sensor array with a graph. It is a block diagram which shows the structure of the control part of the heat processing apparatus of FIG. It is a figure which shows the flowchart of the determination process of the heat processing apparatus which concerns on embodiment.

  Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In the drawings, parts having the same configuration and function are denoted by the same reference numerals, and redundant description is omitted in the following description. Each drawing is schematically shown. For example, the size and positional relationship of display objects in each drawing are not necessarily shown accurately. Also, some drawings are attached with XYZ orthogonal coordinate axes to describe directions. The direction of the Z axis in the coordinate axes indicates the direction of the vertical line, and the XY plane is a horizontal plane.

<Embodiment>
<1. Configuration of heat treatment equipment>
FIG. 1 is a plan view showing an example of the configuration of the heat treatment apparatus 100 according to the present embodiment. FIG. 2 is a longitudinal sectional view showing an example of the configuration of the heat treatment unit 160 of the heat treatment apparatus 100. The heat treatment apparatus 100 is a single-wafer type heat treatment apparatus that heats the substrates W one by one by emitting an extremely short light pulse from a xenon flash lamp and irradiating the substrate W with extremely strong light. As shown in FIG. 1, the heat treatment apparatus 100 carries an unprocessed substrate W into the apparatus and an indexer unit 101 for unloading the processed substrate W out of the apparatus and alignment for positioning the unprocessed substrate W. Unit 130, cooling unit 140 that cools substrate W after the heat treatment, heat treatment unit 160 that performs flash heat treatment on substrate W, and alignment unit 130, cooling unit 140, and heat treatment unit 160. A transfer robot 150 is provided. Further, the heat treatment apparatus 100 includes a control unit 3 that controls the operation mechanism and the transfer robot 150 provided in each of the above processing units to advance the flash heating processing of the substrate W.

  The indexer unit 101 takes out the unprocessed substrate W from each of the carriers 91 and the load port 110 on which a plurality of carriers 91 (two in this embodiment) are placed side by side. A delivery robot 120 is provided. The carrier 91 containing the unprocessed substrate W is transported by an automatic guided vehicle (AGV) or the like and placed on the load port 110, and the carrier 91 containing the processed substrate W is loaded by the automatic guided vehicle. 110 is taken away. Further, the load port 110 is configured so that the carrier 91 can be moved up and down so that the delivery robot 120 can take in and out an arbitrary substrate W with respect to the carrier 91. In addition to the FOUP (front opening unified pod) that accommodates the substrate W in a sealed space, the carrier 91 is configured as an OC (open cassette) that exposes the SMIF (Standard Mechanical Interface) pod and the accommodated substrate W to the outside air. It may be.

  Each substrate W carried into the indexer unit 101 is transported along the transport path P by the delivery robot 120 and the transport robot 150. That is, each substrate W is delivered to the indexer unit 101, the alignment unit 130, the heat processing unit 160, the cooling unit 140, and the indexer unit 101 in this order. Further, a sensor array 171 is provided on the downstream side of the heat treatment unit 160 in the transport path P.

  As shown in FIG. 1, the delivery robot 120 is provided on the downstream side in the transport direction AR <b> 1 of the substrate W with respect to the indexer unit 101. The delivery robot 120 is slidable in the direction of the arrow 120S and is rotatable in the direction of the arrow 120R. In addition, the hand 121 that supports the substrate W can be advanced and retracted in the X-axis direction.

  As a result, the delivery robot 120 takes in and out an arbitrary substrate W from / to the carrier 91, delivers the substrate W taken out from the carrier 91 to the alignment unit 130, and cools the substrate W after the cooling process is completed. 140 can be executed.

  As shown in FIG. 1, the alignment unit 130 is provided between the delivery robot 120 and the transfer chamber 170 and downstream of the delivery robot 120 in the transfer direction AR1. The alignment unit 130 performs alignment processing on each substrate W delivered from the delivery robot 120. Here, the alignment processing means that the orientation of each substrate W in the rotational direction is made substantially the same by adjusting the rotational position of each substrate W based on a reference position such as a notch provided on each substrate W. Say.

  As shown in FIG. 1, the transfer robot 150 is disposed in the transfer chamber 170 and between the alignment unit 130, the cooling unit 140, and the heat treatment unit 160. The alignment unit 130, the cooling unit 140, and the heat treatment unit 160 are arranged so as to be connected to the transfer chamber 170 so that the respective inner spaces can communicate with the inner space of the transfer chamber 170. As a result, the transfer robot 150 can transfer the substrate W to / from the alignment unit 130, the cooling unit 140, and the heat processing unit 160.

  Here, the transfer robot 150 is capable of turning as indicated by an arrow 150R about an axis that faces the vertical direction (Z-axis direction). The transfer robot 150 has two link mechanisms composed of a plurality of arm segments, and transfer arms 151a and 151b for holding the substrate W are provided at the ends of the two link mechanisms. These transfer arms 151a and 151b are vertically spaced apart from each other by a predetermined pitch, and are independently slidable linearly in the same horizontal direction by a link mechanism. Further, the transfer robot 150 can be moved up and down while maintaining the pitch between the transfer arms 151a and 151b.

  Therefore, when the transfer robot 150 transfers (inserts / removes) the substrate W as one of the alignment unit 130, the heat processing unit 160, and the cooling unit 140, first, the transfer arms 151a and 151b are transferred to each other. And then move up and down (or while turning) so that one of the transfer arms is positioned at a height at which the transfer partner and the substrate W are transferred. Then, the transfer arm 151a (151b) is linearly slid in the horizontal direction to transfer the substrate W.

  The heat treatment unit 160 performs heat treatment on the surface of the substrate W by irradiating the substrate W with extremely strong light. Here, the substrate W to be heat-treated by the heat treatment unit 160 is one to which an impurity is added, for example, by an ion implantation method, and the added impurity is activated by this heat treatment.

  As shown in FIG. 1, the heat treatment unit 160 is provided on the opposite side of the alignment unit 130 and the cooling unit 140 with the transfer chamber 170 interposed therebetween. As shown in FIG. 2, the heat treatment unit 160 mainly includes a light irradiation unit 5, a chamber 6, and a holding unit 7.

  As shown in FIG. 2, the light irradiation unit 5 is provided on the upper portion of the chamber 6, and mainly includes a plurality of (30 in the present embodiment) xenon flash lamps (hereinafter simply referred to as “flash lamps”). ) 69, reflector 52, and light diffusion plate 53. Each of the plurality of flash lamps 69 is a rod-shaped lamp having a long cylindrical shape, and each of the flash lamps 69 is planar so that each longitudinal direction thereof is parallel to the main surface of the substrate W held by the holding unit 7. It is arranged. The reflector 52 is provided above the plurality of flash lamps 69 so as to cover all of them. In addition, the surface of the reflector 52 is roughened by blasting, and has a satin pattern.

  Further, the light diffusing plate 53 is formed of quartz glass whose surface is subjected to light diffusing processing. As shown in FIG. 2, the light diffusing plate 53 is disposed between the light diffusing plates 61 provided below the plurality of flash lamps 69. Have a predetermined gap. Thereby, the light emitted from the flash lamp 69 and incident on the light diffusion plate 53 is diffused by the light diffusion plate 53 and reaches the light transmission plate 61.

  The chamber 6 is a processing chamber having a substantially cylindrical shape, and can accommodate the substrate W in an inner space (heat treatment space 65). A translucent plate 61 is provided in the opening 60 above the chamber 6. The translucent plate 61 is made of, for example, quartz, and functions as a chamber window that transmits light emitted from the light irradiation unit 5 and guides it to the heat treatment space 65. That is, the heat treatment unit 160 performs heat treatment on the substrate W by flash light emitted from the flash lamp 69 passing through the light transmitting plate 61 and irradiating the substrate W.

  As shown in FIG. 2, the holding unit 7 mainly includes a hot plate 71 that preheats the substrate W (so-called assist heating) and a susceptor 72, and holds the substrate W to be heated. The susceptor 72 is disposed so as to cover the upper surface (surface on the substrate W side) of the hot plate 71, and is formed of quartz (or aluminum nitride (AIN) or the like). In addition, a pin 75 that prevents the displacement of the substrate W is provided near the upper periphery of the susceptor 72.

  Here, a corresponding support pin 70 is inserted into each of a plurality of (three in the present embodiment) through-holes 77 provided in the holding portion 7. The support pin 70 is made of, for example, quartz, and an end portion far from the holding portion 7 is fixed to the bottom portion 62 of the chamber 6 from the outside of the chamber 6 as shown in FIG. Therefore, a user of heat treatment apparatus 100 (hereinafter simply referred to as “user”) can easily replace each support pin 70.

  Further, as shown in FIG. 2, a shaft 41 is connected to the lower portion of the holding portion 7. The shaft 41 has a substantially cylindrical shape and can be moved up and down in the Z-axis direction by the holding unit lifting mechanism 4. Accordingly, when the shaft 41 is raised with the substrate W supported by the plurality of support pins 70, the substrate W is lowered relative to the holding unit 7 and placed on the holding unit 7. . On the other hand, when the shaft 41 is lowered while the substrate W is placed on the holding unit 7, the substrate W rises relative to the holding unit 7 and is separated from the holding unit 7.

  In addition, the heat processing by the heat processing part 160 of this Embodiment is performed with the following procedures. First, the holding unit 7 is lowered to the delivery position by the holding unit lifting mechanism 4. Next, room temperature nitrogen gas is introduced into the chamber 6, and the heat treatment space 65 becomes a nitrogen gas atmosphere.

  Subsequently, when the gate valve 185 is opened, the substrate W that has been subjected to the alignment process is carried into the heat treatment unit 160 from the transfer chamber 170 by the transfer robot 150 and supported by the support pins 70. When the transfer arm 151a of the transfer robot 150 moves backward from the chamber 6, the gate valve 185 is closed.

  Subsequently, when the substrate W is supported by the support pins 70, the holding unit 7 is raised to the processing position by the holding unit lifting mechanism 4. Accordingly, the substrate W supported by the support pins 70 is transferred to the susceptor 72 and placed and held. The substrate W placed and held is preheated by the hot plate 71, and the temperature of the substrate W rises to a temperature (preheating temperature) T1 at which impurities added to the substrate W are not likely to diffuse due to heat. Can be warmed. Here, the preheating is performed before the flash irradiation by the flash lamp 69 in order to quickly raise the surface temperature to the processing temperature T2 by the heat treatment by the flash lamp 69.

  Subsequently, when the holding unit 7 is raised to the processing position, a short light pulse of flash light is irradiated from the light irradiation unit 5 toward the substrate W. The substrate W is heated by this light irradiation. As a result, the surface temperature of the substrate W instantaneously rises rapidly to the processing temperature T2 of about 1000 ° C. to 1100 ° C., the impurities added to the substrate W are activated, and then the surface temperature rapidly drops. . Therefore, the impurity can be activated while suppressing the diffusion of the impurity added to the substrate W due to the heat (this diffusion phenomenon is also referred to as the impurity profile in the substrate W being reduced).

  In this irradiation, a part of the light emitted from the flash lamp 69 of the light irradiation unit 5 passes through the light diffusion plate 53 and the light transmission plate 61 and goes directly into the chamber 6. The other part is once reflected by the reflector 52 and then passes through the light diffusing plate 53 and the light transmitting plate 61 toward the chamber 6.

  When the flash heating is completed, the holding unit 7 is lowered again to the delivery position, and the substrate W is delivered to the support pins 70. Then, the gate valve 185 is opened, and the substrate W on the support pin 70 is unloaded by the transfer robot 150, whereby the heat treatment in the heat treatment unit 160 is completed.

  3 and 4 are diagrams illustrating the substrate W that has passed through the measurement region U1 of the sensor array 171 and is transported in the transport direction AR1. 3 is a view of the substrate W viewed from the side in the horizontal direction (+ Y direction), and FIG. 4 is a view of the substrate W viewed from above in the vertical direction downward (−Z direction). The sensor array 171 is supported by a support member (not shown) standing on the floor surface of the heat treatment apparatus 100, and the measurement region U <b> 1 is provided at the outlet portion S <b> 1 of the heat treatment unit 160. That is, the measurement region U1 is provided between the heat treatment unit 160 and the cooling unit 140.

  The substrate W is heat-treated in the heat treatment unit 160, and is transported in the transport direction AR1 by the transport robot 150 from the heat processing unit 160 with the gate valve 185 opened. In the course of the transfer, the substrate W passes through the measurement region U1. 3 and 4, the illustration of the transfer robot 150 is omitted.

  The sensor array (also referred to as “measurement unit”) 171 includes a plurality (five in the present embodiment) of light projecting units 171a and a plurality (five in the present embodiment) of light receiving units 171b (FIG. 4). It is configured with. The plurality of light projecting units 171a and the plurality of light receiving units 171b are respectively disposed in the horizontal direction (Y-axis direction). And each of the some light-receiving part 171b is facing each of the some light projection part 171a.

  The light projecting unit 171a and the light receiving unit 171b facing each other receive the detection light L1 projected from the light projecting unit 171a by the light receiving unit 171b and output a measurement signal binarized according to the amount of received light. One light emitting / receiving sensor is configured. That is, the sensor array 171 includes a plurality of (five in the present embodiment) light emitting / receiving sensors.

  The plurality of light emitting / receiving sensors have different measurement areas provided in the direction crossing the conveyance path P, and a measurement area U1 of the sensor array 171 is formed by the measurement areas. Each light projecting unit 171a of each light projecting / receiving sensor irradiates each measurement region with detection light L1, and the detection light L1 not blocked by the substrate W is received by each light receiving unit 171b of each light projecting / receiving sensor. Is done.

  A plurality (five in this embodiment) of scanning trajectories 191 to 195 shown in FIG. 4 are obtained by the substrate W transported in the transport direction AR1 by the transport robot 150 in the transport direction AR1, The locus | trajectory which the detection light L1 scanned on the board | substrate W is shown. That is, the spatial length of each scanning locus 191 to 195 is the spatial length in the transport direction AR1 of the substrate W that crosses each measurement region.

  Each light projecting unit 171a is configured by, for example, a light source such as an LED and its control circuit, and each light receiving unit 171b is configured by, for example, a light receiving element such as a phototransistor and a processing circuit that processes the output. ing.

  Each light projecting unit 171a is irradiated with each detection light L1 having an intensity corresponding to a current having a predetermined current value supplied from the control circuit to the light source, and the light receiving element of each light receiving unit 171b facing each light projecting unit 171a. Is incident on. The light receiving element and the processing circuit of each light receiving unit 171b are, for example, high (H) level (such as 5V) and low (L) level (such as 0V) according to the intensity of the detection light L1 incident on the light receiving element. A measurement signal having a signal level of H level and L level is output by inverting the signal obtained by switching the voltage. Specifically, for example, when the detection light L1 is incident on the light receiving element, an L level measurement signal is output, and when the detection light L1 is not incident on the light receiving element due to being blocked by the substrate W, H Level measurement signal is output.

  As described above, since the substrate W is transported in the transport direction AR1 along the transport path P by the transport robot 150, the time during which the detection light L1 is not incident on each light receiving unit 171b corresponds to each measurement region of the sensor array 171. Depending on a plurality of spatial lengths through which the substrate W has passed. Therefore, the measurement signal output from each light projecting / receiving sensor constituting the sensor array 171 is a signal corresponding to each of a plurality of spatial lengths that the substrate W has been transferred to the transfer robot 150 and passed through each measurement region. Become.

  FIG. 5 is a diagram illustrating measurement signals output from the sensor array 171 as graphs G1 and G2. Graphs G1 and G2 in FIG. 5 show measurement signals 201 and 202, respectively. In each graph, the horizontal axis is set to the time axis, and the vertical axis is set to the signal level. In the heat treatment apparatus 100, the transfer robot 150 transfers the substrate W at a constant speed when the substrate W passes through the measurement region U1. Even when the sensor array 171 is provided at the exit portion S2 (FIG. 1) of the cooling unit 140, the delivery robot 120 transports the substrate W at a constant speed when the substrate W passes through the measurement area of the sensor array. To do. Each measurement signal is measured by one common sensor among the plurality of light emitting / receiving sensors constituting the sensor array 171.

  The measurement signal 201 is a signal obtained when the substrate W has no defect, and the measurement signal 202 is an example of a measurement signal when the substrate W has a shape defect such as a defect. As shown in FIG. 5, the H level section (time) a1 of the measurement signal 201 is longer than the H level section (time) b1 of the measurement signal 202 by a section (time) c1. This indicates that the H level section is shortened due to a defect at the rear end portion in the transport direction AR1 of the substrate W.

  Thus, in the sensor array 171 in the heat treatment apparatus 100, when the substrate W transported at a constant speed has a defective shape such as a defect, the time length of the H level portion of the obtained measurement signal is normal. This is shorter than the measurement signal obtained by measuring the substrate. Accordingly, it is possible to determine the presence or absence of a shape defect such as a defect in the substrate W based on the measurement signal measured by the sensor array 171. In the heat treatment apparatus 100, the CPU 11 in the control unit 3 performs the above-described determination process for the presence or absence of shape defects.

  In the heat processing unit 160, the substrate is heat-treated by the flash lamp 69, so that the substrate is most easily damaged in the heat processing unit 160, but the sensor array 171 is located downstream of the heat processing unit 160 in the transport path P. It has a measurement area U1. For this reason, the shape defect of the substrate W generated in the heat processing unit 160 can be detected based on the measurement signal of the sensor array 171.

  The closer the measurement area U1 of the sensor array 171 is to the heat treatment unit 160, the earlier it can detect the breakage of the substrate W in the heat treatment unit 160 earlier in time, so that the broken pieces of the substrate W are still caught and the gate It is easy to prevent troubles such as the valve 185 being closed or the next substrate being carried into the heat treatment unit 160. Therefore, it is more preferable that the measurement region U1 of the sensor array 171 is set at the exit portion S1 of the heat processing unit 160 in the transport path P.

  However, even if the measurement region U1 is provided between the heat treatment unit 160 and the cooling unit 140 in the transport path P, the measurement region U1 is also provided on the downstream side of the cooling unit 140 like the outlet portion S2 of the cooling unit 140. Even if it is done, since the breakage of the substrate W in the heat treatment unit 160 can be detected, the usefulness of the present invention is not impaired.

  In addition, the shape defect of the substrate W is caused by the fact that the moment when the push-up pin supporting the substrate W in the cooling unit 140 contacts the substrate W is too strong for the strength of the heated substrate. Next, the frequency of occurrence in the cooling unit 140 is high. If the breakage of the substrate W in the cooling unit 140 is overlooked, a serious trouble similar to the oversight of the breakage of the substrate W in the heat treatment unit 160 occurs. Therefore, if the sensor array 171 is provided on the downstream side of the cooling unit 140 like the outlet portion S2, a shape defect such as a defect of the substrate W generated in the cooling unit 140 can be detected.

  Further, if the sensor array 171 is provided in both the downstream exit portion S1 of the heat treatment unit 160 and the downstream exit portion S2 of the cooling unit 140, the substrate W in the heat treatment unit 160 is damaged and cooled. It is preferable because both the damage to the substrate W in the portion 140 can be detected at an early stage.

  In addition, the heat treatment apparatus 100 shown in FIG. 1 includes a sensor array 171 including a plurality of light projecting / receiving sensors. However, the heat treatment apparatus 100 can output one or more sensors that can output measurement signals in the same manner as the light projecting / receiving sensor. If so, the usefulness of the present invention is enjoyed. Further, the sensor array 171 is configured as a transmissive sensor, but may be configured as a reflective sensor that receives the detection light L1 reflected from the surface of the substrate W.

  As shown in FIG. 1, the cooling unit 140 is provided between the delivery robot 120 and the transfer chamber 170 and downstream of the heat treatment unit 160 in the transfer direction AR1. The cooling unit 140 cools the substrate W that has been heated by the heat treatment in the heat treatment unit 160. The substrate W cooled by the cooling unit 140 is taken out from the cooling unit 140 by the delivery robot 120 and returned to the carrier 91 placed on the load port 110 of the indexer unit 101 from the delivery robot 120 as a processed substrate W. Is done.

  Here, the transfer chamber 170 is connected to the alignment unit 130, the cooling unit 140, and the heat treatment unit 160 via gate valves 183, 184, and 185. The alignment unit 130 and the cooling unit 140 are connected to the delivery robot 120 via gate valves 181 and 182, respectively. Therefore, when the substrate W is transported, these gate valves are appropriately opened and closed. Further, the inner space of the alignment unit 130, the cooling unit 140, the heat processing unit 160, and the transfer chamber 170 becomes a sealed space by closing the corresponding gate valves 181 to 185.

  Further, high purity nitrogen gas from a nitrogen gas supply unit (not shown) is supplied into the alignment unit 130, the cooling unit 140, and the transfer chamber 170, respectively, and excess nitrogen gas is appropriately exhausted (not shown). Therefore, the alignment unit 130, the cooling unit 140, and the transfer chamber 170 are kept clean.

  Further, the heat treatment apparatus 100 includes a control unit 3 for controlling each mechanism unit of the heat treatment apparatus 100. FIG. 6 is a block diagram illustrating a configuration of the control unit 3. The configuration of the control unit 3 as hardware is the same as that of a general computer. That is, the control unit 3 stores a CPU 11 that performs various arithmetic processes, a ROM 12 that is a read-only memory that stores basic programs, a RAM 13 that is a readable / writable memory that stores various information, control software, data, and the like. The magnetic disk 14 to be placed is connected to a bus line 19.

  A display unit 21 and an input unit 22 are electrically connected to the bus line 19. The display unit 21 is configured using, for example, a liquid crystal display or the like, and displays various information such as processing results and recipe contents. The input unit 22 is configured using, for example, a keyboard, a mouse, and the like, and receives input of commands, parameters, and the like. The operator of the apparatus can input commands and parameters from the input unit 22 while confirming the contents displayed on the display unit 21. Note that the display unit 21 and the input unit 22 may be integrated to form a touch panel.

  The bus line 19 is electrically connected to a driving motor (not shown) of the heat treatment apparatus 100, a sensor array 171, a lamp power supply circuit of a flash lamp 69 (not shown), and an on-off valve.

  The CPU 11 of the control unit 3 executes predetermined software stored in the magnetic disk 14 to control the lighting timing of the flash lamp 69 and to control the driving motor to increase the height of the susceptor 72 and the hot plate 71. Adjust the position. Further, the CPU 11 is supplied with a measurement signal from the sensor array 171, and determines and detects the presence / absence of a shape defect of the substrate W based on the measurement signal. Specifically, the CPU 11 acquires a measurement signal (reference signal) in a predetermined state such as, for example, an H level signal acquired in advance by an experiment or simulation on a normal substrate (“determination criterion”, (Also referred to as “good / bad determination criterion”) and a period in which the measurement signal (comparison target signal) in the predetermined state for the measurement target substrate is output. If the comparison target signal is shorter in time than the reference signal as a result of the comparison, it is determined that the substrate W has a shape defect such as a defect. Note that it is not essential to compare the reference signal and the comparison target signal between the times of these signals. For example, the degree of coincidence may be compared as a temporal or spatial signal pattern between the signal pattern of the reference signal and the signal pattern of the comparison target signal. In this case, the signal pattern of the reference signal itself, a predetermined degree of coincidence, and the like are the determination criteria.

  The above criteria are acquired in advance through experiments, simulations, etc., and stored in the magnetic disk 14. When a sensor array 171 having a plurality of sensors is used, the spatial length of the scanning locus of the detection light L1 on a normal substrate is different as in the scanning locus 191 to 195 in FIG. There is. Accordingly, a plurality of determination criteria are set based on experiments or the like according to a plurality of spatial lengths through which a normal substrate is transported by a transport device and passes through a plurality of measurement regions of the sensor array 171. It is preferably used for the determination of shape defects. Thereby, the determination of the presence or absence of the shape defect of the substrate W becomes more accurate.

  Further, the CPU 11 synchronizes the transport operation of the substrate W by the transport robot 150 and the delivery robot 120 and the light emission operation of the detection light L1 emitted from the sensor array 171. The operation of turning off the detection light L1 is also preferably synchronized with the operation of transporting the substrate W. In addition, even if the sensor array 171 always irradiates the detection light L1 during the period when the power is supplied to the heat treatment apparatus 100, the presence / absence of the shape defect of the substrate W is correctly determined, and thus the usefulness of the present invention. Is not detrimental.

<2. Judgment processing of substrate shape defect by heat treatment device>
FIG. 7 is a flowchart of a determination process S100 in which the heat treatment apparatus 100 determines whether or not the substrate W to be processed has a shape defect.

  First, measurement signals are measured by the sensor array 171 (step S110). More specifically, each measurement is performed by the sensor array 171 when the substrate W transported by the transport unit such as the transport robot 150 passes through the measurement region U1 of the sensor array 171 (a plurality of measurement regions for each sensor). A signal is output. Each measurement signal is a signal corresponding to the spatial length of the substrate W that has been transferred to the transfer unit and passed through each measurement region. Irradiation of the detection light L1 by the sensor array 171 may be performed constantly, or only in a period during which the substrate W is expected to pass through the measurement region U1 of the sensor array 171 by being synchronized with the transport operation of the substrate W. It may be done. Further, the CPU 11 of the control unit 3 takes in the measurement signal supplied from the sensor array 171. Acquisition of the measurement signal may be performed intermittently in synchronization with the irradiation of the detection light L1, or may be performed asynchronously and at regular intervals. The portion of the measurement signal that is necessary for determining whether or not the substrate W has a shape defect may be specified by detecting the rising or falling edge of the measurement signal, or specified based on the control information for transporting the substrate W. May be. Alternatively, the detection may be performed by detecting the passage of the substrate W through the measurement region U1 using a separate proximity sensor or the like.

  Moreover, it is preferable that the conveyance speed when the board | substrate W passes the measurement area | region U1 of the sensor array 171 is a fixed speed. If the speed is constant, it is easy to compare the measurement signals in time, and it is easy to determine the presence or absence of shape defects (detection of shape defects). However, even if the speed is not constant, if the fluctuation pattern is known, it is possible to compare the measurement signals by converting them to the same scale time. Therefore, even if the transport speed when the substrate W passes through the measurement region U1 of the sensor array 171 is not constant, the usefulness of the present invention is not impaired as long as the variation pattern is known.

  When the acquisition of the measurement signal measured by the sensor array 171 is completed, the CPU 11 of the controller 10 reads each determination criterion for the presence or absence of a shape defect from the magnetic disk 14 (step S120). As described above, each determination criterion is preferably set for each sensor constituting the sensor array 171. Then, the CPU 11 compares the time length of each measurement signal with each determination criterion for each corresponding combination (step S130). As a result of the determination, if the time length of one or more measurement signals is less than the corresponding determination criterion, the CPU 11 determines that the substrate W has a shape defect such as a defect (step S150), and a determination process. Exit. As a result of the determination, if the time length of any measurement signal is the same as the corresponding determination criterion, the CPU 11 determines that the substrate W is a normal substrate (non-defective substrate) (step S160). End the process.

  According to the heat treatment apparatus according to the present embodiment configured as described above, the measurement region on the downstream side of the heat treatment unit 160 in the transport path P is converted into a measurement signal corresponding to the spatial length through which the substrate has passed. Based on this, the presence / absence of a substrate shape defect is determined. Accordingly, it is possible to detect substrate shape defects such as defects or cracks generated by the heat treatment of the substrate.

  Further, according to the heat treatment apparatus according to the present embodiment configured as described above, the measurement region U1 of the sensor array 171 is provided in the exit portion S1 of the heat treatment unit 160 in the transport path P. Accordingly, the substrate shape defect can be determined more quickly than in the case where the measurement region U1 is provided on the downstream side of the exit portion S1, so that the gate valve 185 is closed in a state in which the fragments of the substrate are caught. Trouble can be suppressed more.

  Further, according to the heat treatment apparatus according to the present embodiment configured as described above, the measurement region U1 of the sensor array 171 is provided on the downstream side of the cooling unit 140 in the transport path P. Even when a W shape defect occurs, a shape defect is detected.

  Further, according to the heat treatment apparatus according to the present embodiment configured as described above, the transfer unit such as the transfer robot 150 or the delivery robot 120 moves the substrate W at a constant speed when the substrate W passes the measurement region U1. The CPU 11 (determination unit) determines the presence or absence of a shape defect of the substrate W based on the time length of the measurement signal measured by the sensor array 171. Since this determination can be easily performed, the determination cost for the presence or absence of a substrate shape defect can be reduced.

  Further, according to the heat treatment apparatus according to the present embodiment configured as described above, the sensor array 171 includes a plurality of sensors each having a plurality of different measurement regions provided in a direction crossing the transport path P of the substrate W. Therefore, the oversight of shape defects can be further reduced.

  Further, according to the heat treatment apparatus according to the present embodiment configured as described above, a plurality of spatial lengths through which a normal substrate W is transported to the transport unit and passes through the plurality of measurement regions in the sensor array 171. A plurality of determination criteria set in accordance with the above are used. Accordingly, the presence / absence of a shape defect is more accurately determined.

  Moreover, according to the heat treatment apparatus according to the present embodiment configured as described above, the substrate that is provided with the flash lamp 69 and that is accommodated by irradiating the flash light from the flash lamp 69 onto the substrate accommodated in the chamber 6. Is heat treated. When flashlight from a flash lamp is used, the impact on the substrate during heat treatment is increased and the substrate is easily cracked. Therefore, it is determined whether there is a defective shape of the substrate by measurement in the measurement region U1 on the downstream side of the heat treatment unit 160. The usefulness of the determination process of the present invention is more remarkable.

  Although the invention has been shown and described in detail, the above description is illustrative in all aspects and not restrictive. Therefore, embodiments of the present invention can be modified or omitted as appropriate within the scope of the invention. For example, even if the present invention is applied to an apparatus that performs heat treatment other than a flash lamp, such as a laser annealing apparatus or a spike annealing apparatus, the usefulness of the present invention is not impaired. In the heat treatment apparatus according to the present embodiment, the substrate is preheated during the heat treatment by the hot plate, but may be preheated by radiant heat from a halogen lamp or the like.

100 Heat treatment apparatus 11 CPU (determination unit)
DESCRIPTION OF SYMBOLS 101 Indexer part 110 Load port 120 Delivery robot 120R, 120S Arrow 121 Hand 130 Alignment part 140 Cooling part 150 Transfer robot 150R Arrow 151a, 151b Transfer arm 160 Heat processing part (heating part)
171 Sensor array (measurement unit)
171a Light projecting unit 171b Light receiving unit 181 to 185 Gate valve 201, 202 Measurement signal 5 Light irradiation unit AR1 Transport direction S1, S2 Exit part U1 Measurement area W Substrate

Claims (9)

A heat treatment apparatus for heating a substrate by irradiating the substrate with light,
A heating unit that is provided in a transfer path of the substrate and performs heat treatment on the substrate housed in a processing chamber;
A transport unit that transports the substrate heated by the heating unit to the downstream side of the heating unit along the transport path;
A measurement unit that outputs a measurement signal according to a spatial length that the substrate is transported to and passed through the transport unit through a measurement region on the downstream side of the heating unit in the transport path;
A determination unit that determines the presence or absence of a shape defect of the substrate based on the measurement signal;
A heat treatment apparatus comprising: The heat treatment apparatus according to claim 1,
A cooling unit for cooling the substrate heated by the heating unit on the downstream side of the heating unit in the transport path;
The measurement area is
A heat treatment apparatus provided between the heating unit and the cooling unit. The heat treatment apparatus according to claim 2,
The measurement area is
The heat processing apparatus provided in the exit part of the said heating part. The heat treatment apparatus according to claim 1,
A cooling unit that cools the substrate heated by the heating unit on the downstream side of the heating unit in the transport path,
Further comprising
The measurement area is
The heat processing apparatus provided in the downstream of the said cooling part in the said conveyance path | route. A heat treatment apparatus according to any one of claims 1 to 4, wherein
The transport unit is
Transporting the substrate at a constant speed as the substrate passes through the measurement area;
The determination unit
The heat processing apparatus which determines the presence or absence of the shape defect of the said board | substrate based on the time length of the said measurement signal. The heat treatment apparatus according to any one of claims 1 to 5,
The measuring unit is
A plurality of sensors each having a plurality of different measurement areas provided in a direction crossing the transport path;
With
The plurality of sensors are:
As the measurement signal, the substrate is transferred to the transfer unit and outputs a plurality of measurement signals corresponding to a plurality of spatial lengths respectively passing through the plurality of measurement regions,
The determination unit
The heat processing apparatus which determines the presence or absence of the shape defect of the said board | substrate based on these measurement signals. The heat treatment apparatus according to claim 6,
The determination unit
Whether or not the substrate is defective based on a plurality of determination criteria set according to a plurality of spatial lengths through which the normal substrate is transported to the transport unit and passes through the plurality of measurement regions. Heat treatment device to judge. The heat treatment apparatus according to any one of claims 1 to 7,
The heating unit is
A heat treatment apparatus that includes a flash lamp and heats the substrate by irradiating flash light from the flash lamp onto the substrate accommodated in the processing chamber. A method for determining the presence or absence of a substrate shape defect in a heat treatment apparatus that heats a substrate by irradiating the substrate with light,
The heat treatment apparatus comprises:
A heating unit that is provided in a transfer path of the substrate and performs heat treatment on the substrate housed in a processing chamber;
A transport unit that transports the substrate heated by the heating unit to the downstream side of the heating unit along the transport path;
With
The determination method is as follows:
Measuring a measurement signal corresponding to a spatial length in which the substrate is transported to the transport unit and passed through the measurement region on the downstream side of the heating unit in the transport path;
Determining the presence or absence of defects in the substrate based on the measurement signal;
A determination method comprising:

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