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JP2013243381A - 金属ゲートとストレッサーを有するゲルマニウムフィンｆｅｔ - Google Patents

金属ゲートとストレッサーを有するゲルマニウムフィンｆｅｔ Download PDF

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JP2013243381A
JP2013243381A JP2013144426A JP2013144426A JP2013243381A JP 2013243381 A JP2013243381 A JP 2013243381A JP 2013144426 A JP2013144426 A JP 2013144426A JP 2013144426 A JP2013144426 A JP 2013144426A JP 2013243381 A JP2013243381 A JP 2013243381A
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Chih-Chieh Yeh
致▲かい▼ 葉
Chih-Sheng Chang
智勝 張
Hsingjen Wann
幸仁 萬
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Abstract

【課題】金属ゲートとストレッサーを有するゲルマニウムフィンFETを提供する。
【解決手段】半導体基板上に直接設けられた複数の第一ゲルマニウムフィンであって、第一ゲルマニウムフィン１２４の上面と側壁上の第一ゲート誘電体１３２、及び、第一ゲート誘電体上の第一ゲート電極１３４からなるn型フィンFET１５０と、半導体基板上に直接設けられた複数の第二ゲルマニウムフィンであって、第二ゲルマニウムフィン２２４は互いに物理的に分離し、かつ、互いに電気的に接続すること、第二ゲルマニウムフィンの上面と側壁上の第二ゲート誘電体２３２、及び、第二ゲート誘電体上の第二ゲート電極２３４からなるp型FinFET２５０とを備え、第一ゲート電極と第二ゲート電極は、4.25eVと4.4eV間の仕事関数を有する同一材料で形成される。
【選択図】図１０

Description

本発明は、集積回路に関するものであって、特に、フィン電界効果トランジスタ(FinFET)の構造とその形成方法に関するものである。
金属酸化膜半導体(MOS)トランジスタの速度は、MOSトランジスタの駆動電流と密接な関係があり、駆動電流は、更に、電荷の移動度とも関係がある。例えば、チャネル領域中の電子移動度（electron mobility）が高い時、NMOSトランジスタは高い駆動電流を有し、チャネル領域中の正孔移動度（hole mobility）が高い時、PMOSトランジスタは高い駆動電流を有する。
ゲルマニウムは、一般的に知られた半導体材料である。ゲルマニウムの電子移動度と正孔移動度は、集積回路の形成に常用される半導体材料であるシリコンより高い(それぞれ、２．６倍と４倍)。よって、ゲルマニウムは集積回路を形成するための優れた材料である。ゲルマニウムの付加された有利な特徴は、ゲルマニウムの正孔移動度と電子移動度は、シリコンの応力感度（stress sensitivity）より大きいことである。例えば、図1は、ゲルマニウムとシリコンの正孔移動度を一軸圧縮応力（uni-axial compressive stresses）の関数として示す。注意すべきことは、圧縮応力の増加に伴い、ゲルマニウムの正孔移動度は、シリコンより速く増加することで、これは、ゲルマニウムベースのPMOS装置が、シリコンベースのPMOS装置よりも高い駆動電流を有する可能性が高いことを示す。同様に、図２は、ゲルマニウムとシリコンの電子移動度を一軸引張応力（tensile stresses）の関数として示す。注意すべきことは、引張応力の増加に伴い、ゲルマニウムの電子移動度は、シリコンより速く増加することで、これは、ゲルマニウムベースのNMOS装置が、シリコンベースのNMOS装置より高い駆動電流を有する可能性が高いことを示すことである。
しかしながら、ゲルマニウムは又、欠点を受ける。ゲルマニウムのバンドギャップは0.66 eVで、シリコンのバンドギャップ(1.12 eV)より小さい。これは、ゲルマニウムベースのMOS装置の基板電流漏れが高いことを意味する。加えて、ゲルマニウムの誘電率（dielectric constant）は16で、シリコンの誘電率(11.9)より大きい。従って、ゲルマニウムベースのMOS装置のドレイン誘導バリア低下（drain-induced barrier lowering(DIBL)）も、シリコンベースのMOS装置より高い。
本発明は、フィン電界効果トランジスタ(FinFET)の構造とその形成方法を提供し、上述の問題を改善することを目的とする。
実施例の一態様によれば、集積回路構造は、半導体基板上に直接設けられた複数の第一ゲルマニウムフィンであって、第一ゲルマニウムフィンは互いに物理的に分離し(separate)、かつ、互いに電気的に接続すること、第一ゲルマニウムフィンの上面と側壁上の第一ゲート誘電体、及び、第一ゲート誘電体上の第一ゲート電極からなることを備えたn型フィン電界効果トランジスタ（FinFET)と、半導体基板上に直接設けられた複数の第二ゲルマニウムフィンであって、第二ゲルマニウムフィンは互いに物理的に分離し、かつ、互いに電気的に接続すること、第二ゲルマニウムフィンの上面と側壁上の第二ゲート誘電体、及び、第二ゲート誘電体上の第二ゲート電極からなるp型FinFETであって、第一ゲート電極と第二ゲート電極は、4.25eVと4.4eV間の仕事関数（work function）を有する同一材料で形成され、かつ、第一ゲルマニウムフィンと第二ゲルマニウムフィンのゲルマニウム原子百分率は、50パーセントより大きいことと、半導体基板上に直接設けられた複数のダミーフィンからなるダミーフィン構造とを備えた。
他の実施例も開示される。
公知の問題が改善され、また、n型FinFETとp型FinFETの駆動電流が改善され、電流漏れも減少する。
ゲルマニウムとシリコンの正孔移動度を一軸圧縮応力の関数として示す。 ゲルマニウムとシリコンの電子移動度を一軸引張応力の関数として示す。 実施例によるゲルマニウムベースのFinFET製造の中間段階の斜視図と断面図である。 実施例によるゲルマニウムベースのFinFET製造の中間段階の斜視図と断面図である。 実施例によるゲルマニウムベースのFinFET製造の中間段階の斜視図と断面図である。 実施例によるゲルマニウムベースのFinFET製造の中間段階の斜視図と断面図である。 実施例によるゲルマニウムベースのFinFET製造の中間段階の斜視図と断面図である。 実施例によるゲルマニウムベースのFinFET製造の中間段階の斜視図と断面図である。 実施例によるゲルマニウムベースのFinFET製造の中間段階の斜視図と断面図である。 マルチフィンFinFETの斜視図と断面図である。 マルチフィンFinFETの斜視図と断面図である。 マルチフィンFinFETの斜視図と断面図である。 ゲルマニウムのエネルギー帯を示す図である。
新規のフィン電界効果トランジスタ(FinFET)の実施例とその形成方法が提供される。実施例を形成する中間段階が説明される。実施例の変化も討論される。様々な図式と実施例で、同じ参照符号は同じ要素を示す。
図３を参照して、集積回路構造が形成される。集積回路構造は、基板20を含み、シリコン基板、ゲルマニウム基板、或いは、他の半導体材料からなる基板であってもよい。基板20はp型、或いは、n型不純物がドープされる。分離領域、例えば、シャロートレンチアイソレーション（浅溝）（shallow trench isolation、STI)領域22は、基板の20の中か上方に形成される。ゲルマニウムフィン124と224が、STI領域22の上面の上に形成される。代表的実施例において、隣接するSTI領域22間の基板20の上部分を凹陥させ(recess)、凹部を形成し、凹部にゲルマニウムを再成長することにより、ゲルマニウムフィン124と224が形成される。その後、STI領域22の上部分は除去してもよいが、STI領域22の下部分は除去されず、隣接するSTI領域22間の再成長ゲルマニウムの上部分がゲルマニウムフィンになる。ゲルマニウムフィン124と224は、例えば、約50パーセントより大きいゲルマニウム原子百分率を有してもよい。実施例において、フィン124と224は、純ゲルマニウムで形成される。別の実施例において、フィン124と224は、シリコンゲルマニウムで形成される。
ゲルマニウムフィン124と224はチャネルドーピング（channel doping）を有してもよい。ゲルマニウムフィン124はp型不純物、例えば、ボロン（boron）がドープされ、ゲルマニウムフィン224はn型不純物、例えば、リンがドープされてもよい。ゲルマニウムフィン124と224のチャネルドーピングは、約5E17/cm3より小さいか、或いは、約1E17/cm3と同じくらい低くてよい。代表的実施例において、ゲルマニウムフィン124と224のアスペクト比(高さH対幅Wの比率)は、約1より大きいか、さらに約5以上であってもよい。基板20は、NMOS装置領域100中の一部とPMOS装置領域200中の一部を含む。ゲルマニウムフィン124と224は、それぞれ、NMOS装置領域100とPMOS装置領域200中にある。
図４を参照して、ゲート誘電体層32とゲート電極層34が、NMOS装置領域100とPMOS装置領域200中の双方と、ゲルマニウムフィン124と224上に蒸着される。実施例において、ゲート誘電体層32は、高k誘電材料で形成される。高k誘電材料は、約4.0より大きいか、さらに約7.0以上のk値を有してもよく、アルミニウム含有の誘電材料（Al2O3、HfAlO、HfAlON、AlZrO等）、Hf含有の材料（HfO2、HfSiOx、HfAlOx、HfZrSiOx、HfSiON等）、及び/又は、LaAlO3とZrO2等の他の材料を含んでもよい。
ゲート電極層34はゲート誘電体層32上に形成され、金属を含んでもよい。ゲート電極層34は、ゲルマニウムの伝導バンド（conduction band）(4 eV)と価電子帯（valance band）(4.66 eV)の固有レベル(中間レベル、約4.33 eV)に近い仕事関数を有することができる。実施例において、ゲート電極層34の仕事関数は、約4.15 eV〜4.5 eVか、或いは、さらに約4.25 eV〜約4.4 eVである。ゲート電極層34の代表的材料の例として、TixNy、TaxNy、Al、TaxCy、Pt、その複合層、及び、その組み合わせがあり、xとyは正値である。
ゲート電極層34とゲート誘電体層32は、その後、パターン化されて、図５で示されるように、ゲートスタックを形成する。NMOS装置領域100のゲートスタックは、ゲート電極134とゲート誘電体132を含む。PMOS装置領域200のゲートスタックは、ゲート電極234とゲート誘電体232を含む。よって、ゲルマニウムフィン124と224は、それぞれ、ゲートスタックにより被覆されない部分を有する。
図６を参照して、ゲートスペーサ136と236が形成されてもよい。ゲート誘電体132と232、ゲート電極134と234、及び、ゲートスペーサ136と236により被覆されないゲルマニウムフィン124と224の露出部分は、その後、除去され(凹陥する)るが、ゲルマニウムフィン124と224の被覆部分は除去されない。除去はドライエッチングにより実行してもよい。フィン124と224の除去部分により残された空間は、それぞれ、凹部140と240と称する。凹部140と240は、STI領域22の上面と同じ高さの底面を有してもよい。あるいは又、凹部140と240の底面は、図６で示されるように、STI領域22の上面35より低くてもよい。
図７(及び、後続の図８と９)は、図６に示される構造の断面図を示し、図６の線7-7と交差する垂直平面で、NMOS装置領域100の断面図が得られ、線7'−7' と交差する垂直平面で、PMOS装置領域200の断面図が得られる。注意すべきことは、図７と後続の図８、図９は、NMOS装置領域100とPMOS装置200断面図は同一平面にあるが、実際は、異なる平面にあってもよいことである。
次に、図８で示されるように、PMOS領域200が、例えば、フォトレジスト241により被覆され、選択的エピタキシャル成長（selective epitaxial growth、SEG)により、凹部140にエピタキシャル成長され、ソースとドレイン(以下、ソース/ドレインと称す)領域142を得る。ソース/ドレイン領域142は、ソース/ドレインストレッサー142とも称され、ゲルマニウムフィン124より小さい格子定数（lattice constant）を有してもよい。代表的実施例において、ソース/ドレイン領域142はSiGeからなり、プラズマ化学気相成長法（plasma enhanced chemical vapor deposition、PECVD)、或いは、他の常用の方法を用いて形成される。前駆体（precursor）は、SiH4等のSi含有ガスとGeH4等のGe含有ガス、からなってもよく、Si含有ガスとGe含有ガスの分圧（partial pressures）が調整されて、ゲルマニウム対シリコンの原子比率を変更することができる。実施例において、得られたソース/ドレインストレッサー142は、約20〜60％の原子百分率のシリコンを有する。別の実施例において、ソース/ドレインストレッサー142は、シリコン炭素（silicon carbon、SiC)、或いは、炭素を含まないシリコン、及び/又は、ゲルマニウムを加えたシリコンからなってもよい。エピタキシャル成長進行時、リン、及び/又は、砒素（arsenic）等のN型不純物がその場でドープ（in-situ doped）される。ソース/ドレイン領域142の格子定数がゲルマニウムフィン124の格子定数より小さいので、ソース/ドレイン領域142は、ゲルマニウムフィン124に対し引張圧力を加え、n型FinFET150のチャネル領域を形成する。ソース/ドレイン領域142のエピタキシャル成長後、フォトレジスト241が除去される。
図９に示されるように、NMOS 装置領域100は、例えば、フォトレジスト141により被覆される。ソース/ドレインストレッサー242とも称されるソース/ドレイン領域242が、凹部240でエピタキシャル成長する。ソース/ドレイン領域242は、ゲルマニウムフィン224より大きい格子定数を有してもよい。再度、ソース/ドレイン領域242はPECVDを用いて形成してもよい。実施例において、ソース/ドレイン領域242はGeSnからなる。別の実施例において、ソース/ドレイン領域242は、III族とV族材料からなる化合物半導体材料(以下、III-V族半導体材料と称す)、例えば、InGaAs、InP、GaSb、InAs、AlSb、InSb等からなる。ソース/ドレイン領域242の格子定数がゲルマニウムフィン224より高いので、ソース/ドレイン領域242は、ゲルマニウムフィン224に圧縮応力を加え、結果として生じるPMOS FinFET 250のチャネル領域を形成する。ソース/ドレイン領域242のエピタキシャル成長後、フォトレジスト141が除去される。
ソース/ドレイン領域142と242を形成するエピタキシャルプロセスの間、進行中のエピタキシャルプロセスに伴って、それぞれ、n型不純物(リン等)とp型不純物(ボロン等)がドープされてもよい。不純物濃度は、約5x1020/cm3〜1x1021/cm3である。別の実施例において、p型とn型不純物がドープされず、ソース/ドレイン領域142と242のドーピングは、ソース/ドレイン領域142と242の形成後に実行される。
次に、ソース/ドレイン領域142と242と金属を反応させることにより、シリサイド/ゲルマニウム（silicide/germanide）領域（図示しない）が、ソース/ドレイン領域142と242上に形成され、接触抵抗を減少させることができる。シリサイド/ゲルマニウム領域の形成の詳細は当分野にて既知であり、ここでは繰り返さない。上述のプロセスによって、n型FinFET150とPMOS FinFET 250が形成される。
上記に論じられた実施例において、単一のフィンFinFETが論じられた。あるいは又、本発明の概念は、マルチ（多数）フィンのFinFETに適用される。図１０〜１２は、マルチフィンFinFETの断面図と斜視図を示す。特に定めのない限り、同じ参照符号は同じ要素を示すのに用いられる。よって、図１０〜１２で示される要素の材料はここで繰り返さない。10は、n型FinFET150、PMOS FinFET250、ダミーフィン324を含むダミーフィン構造350の集積回路の断面図を示し、基板320上に形成される。基板320は、ゲルマニウム基板かシリコン基板とすることができる。N型FinFET150はpウェルに形成され、マルチゲルマニウムフィン124を含む。ゲート電極134はマルチゲルマニウムフィン124上に形成され、よって、マルチゲルマニウムフィン124は、単一のn型FinFET150のフィンになる。ゲート誘電体132は、ゲルマニウムフィン124とゲート電極134間に形成される。同様に、PMOSFinFET250はnウェルに形成され、マルチゲルマニウムフィン224を含む。ゲート電極234はマルチゲルマニウムフィン224上に形成され、よって、マルチゲルマニウムフィン224は、単一PMOS FinFET250のフィンになる。ゲート誘電体232は、ゲルマニウムフィン124とゲート電極134間に形成される。加えて、ダミーフィンは又、いかなるFinFETの形成にも用いられないが、ゲルマニウムフィン124と224の形成において、パターンローディング効果を減少させるために形成される。
マルチフィンが単一FinFETに用いられる時、FinFETの駆動電流は更に増加する。ゲルマニウムとシリコン間には格子不整合（lattice mismatch）があるので、より大きいフィン幅のフィンからよりも、より小さいフィン幅のフィンから成長されたゲルマニウムエピタキシー層のほうが、（より低い欠陥密度の）高い品質を達成することがより容易である。
図１１と１２はFinFETの斜視図である。図１１中の同じ要素は、図１０に見つけることができる。FinFETは、n型FinFET150かPMOS FinFET250かのどちらかであってよく、よって、150/250で示される。図１１において、ソース/ドレイン領域(ストレッサー)142/242は、ゲルマニウムフィン124/224から成長して得られ、且つ、不連続部位（discrete regions）である。図１２において、ゲルマニウムフィン124/224から成長して得られたソース/ドレイン領域(ストレッサー)142/242は互いに合併（一体化）する。
図１３は、ゲルマニウムのエネルギー帯（energy bands）を示す。注意すべきことは、ゲルマニウムは、4 eVに等しい伝導バンドEc、4.66 eVに等しい価電子帯（valence band）Ev、及び、4.33 eVに等しい固有レベル（intrinsic level）Ei((Ec+Ev)/2)を有することである。これにより、固有レベルEiと伝導バンドEcは、約330 mVに等しいエネルギー差を有し、固有レベルEiと価電子帯Evは、約330 mVに等しいエネルギー差を有する。330 mVのエネルギー差が用いられて、n型ゲルマニウムフィンFETとp型ゲルマニウムフィンFETの金属ゲートの形成を単純化することができる。ゲルマニウムフィンFETにおいて、完全に空乏化したチャネルは、スレショルド（しきい値）電圧Vtの減少をもたらすので、バンド端（band-edge）の仕事関数はもはや必要とされない。代わりに、中間バンドギャップ付近の（near-mid-bandgap）の仕事関数が、スレショルド電圧Vtを目標値に正確にシフトするため必要となる。よって、ゲルマニウムベースのFinFETは、n型ゲルマニウムフィンFETとp型ゲルマニウムフィンFET両者の金属ゲートの仕事関数が、約4.33 eVの固有レベルに近づく時、たとえ同じ金属材料が、n型FinFETとp型FinFETのゲートを形成するため用いられたとしても、n型FinFETとp型FinFETの仕事関数を最適化する要件はそれらいずれをも満たすことができる。
討論された有利な特徴に加え、本発明の実施例は、数個の他の有利な特徴がある。ゲルマニウムベースのFinFETの形成によって、ゲルマニウムの電子移動度と正孔移動度が高いので、n型FinFETとp型FinFETの駆動電流を改善することができる。平面MOS装置と比較すると、FinFETの接合面積の減少により、電流漏れも減少することができる。
本発明では好ましい実施例を前述の通り開示したが、これらは決して本発明に限定するものではなく、当該技術を熟知する者なら誰でも、本発明の精神と領域を脱しない範囲内で各種の変動や潤色を加えることができ、従って本発明の保護範囲は、特許請求の範囲で指定した内容を基準とする。
20 〜 基板
22 〜 シャロートレンチアイソレーション(STI)
32 〜 ゲート誘電層
34 〜 ゲート電極層
35 〜 STI22の上面
100 〜 NMOS素子
124、224 〜 ゲルマニウムフィン
132、232 〜 ゲート誘電層
134、234 〜 ゲート電極層
136、236 〜 ゲートスペーサ
140、240 〜 凹部
141、241 〜 フォトレジスト
142、242 〜 ソース/ドレイン領域
150 〜 NMOS FinFET
200 〜 PMOS素子
250 〜 PMOS FinFET
320 〜 基板
324 〜 ダミーフィン
350 〜 ダミーフィン構造
W 〜 ゲルマニウムフィンの幅
H 〜 ゲルマニウムフィンの高さ

Claims (7)

  1. 半導体基板と、
    前記半導体基板上に直接設けられた複数の第一ゲルマニウムフィンであって、前記第一ゲルマニウムフィンは互いに物理的に分離し(separate)、かつ、互いに電気的に接続することを特徴とすること、前記第一ゲルマニウムフィンの上面と側壁上の第一ゲート誘電体、及び、前記第一ゲート誘電体上の第一ゲート電極からなるn型フィン電界効果トランジスタ（FinFET)と、
    前記半導体基板上に直接設けられた複数の第二ゲルマニウムフィンであって、前記第二ゲルマニウムフィンは互いに物理的に分離し、かつ、互いに電気的に接続することを特徴とすること、前記第二ゲルマニウムフィンの上面と側壁上の第二ゲート誘電体、及び、前記第二ゲート誘電体上の第二ゲート電極からなるp型FinFETであって、前記第一ゲート電極と前記第二ゲート電極は、4.25eVと4.4eV間の仕事関数（work function）を有する同一材料で形成され、かつ、前記第一ゲルマニウムフィンと前記第二ゲルマニウムフィンのゲルマニウム原子百分率は、50パーセントより大きいことを特徴とすることと、
    前記半導体基板上に直接設けられた複数のダミーフィンからなるダミーフィン構造と、
    を備えた集積回路構造。
  2. 前記第一ゲート電極と前記第二ゲート電極は、金属ゲート電極であることを特徴とする請求項１に記載の集積回路構造。
  3. 前記n型FinFETは、更に、シリコン炭素からなるソース/ドレイン領域を有することを特徴とする請求項１に記載の集積回路構造。
  4. 前記n型FinFETは、更に、ソース/ドレイン領域を有し、前記ソース/ドレイン領域中のゲルマニウム原子百分率は、前記第一ゲルマニウムフィン中のゲルマニウム原子百分率より低いことを特徴とする請求項１に記載の集積回路構造。
  5. 前記p型FinFETは、更に、ゲルマニウム錫（GeSn）からなるソース/ドレイン領域を有することを特徴とする請求項１に記載の集積回路構造。
  6. 前記p型FinFETは、更に、III族とV族材料からなる化合物半導体材料(III-V族半導体材料)からなるソース/ドレイン領域を有し、前記III-V族半導体材料の格子定数は、前記第二ゲルマニウムフィンより大きいことを特徴とする請求項１に記載の集積回路構造。
  7. 半導体基板と、
    前記半導体基板上に直接設けられた複数の第一ゲルマニウムフィンであって、前記第一ゲルマニウムフィンは互いに物理的に分離し、かつ、互いに電気的に接続することを特徴とすること、前記第一ゲルマニウムフィンの上面と側壁上の第一ゲート誘電体、及び、前記第一ゲート誘電体上の第一ゲート電極、及び、前記第一ゲート電極に隣接する第一ソース/ドレイン領域であって、この第一ソース/ドレイン領域は前記第一ゲルマニウムフィンの格子定数よりも小さい第一格子定数を有する第一エピタキシャル領域からなることを特徴とすること、を備えたn型フィン電界効果トランジスタ（FinFET)と、
    前記半導体基板上に直接設けられた複数の第二ゲルマニウムフィンであって、前記第二ゲルマニウムフィンは互いに物理的に分離し、かつ、互いに電気的に接続することを特徴とすること、前記第二ゲルマニウムフィンの上面と側壁上の第二ゲート誘電体、前記第二ゲート誘電体上の第二ゲート電極であって、前記第一ゲート電極と前記第二ゲート電極は、4.25eVと4.4eV間の仕事関数（work function）を有することを特徴とすること、及び、前記第二ゲート電極に隣接する第二ソース/ドレイン領域からなるp型FinFETであって、この第二ソース/ドレイン領域は、前記第二ゲルマニウムフィンの格子定数よりも大きい第二格子定数を有する第二エピタキシャル領域を備え、かつ、前記第一ゲルマニウムフィンと前記第二ゲルマニウムフィンのゲルマニウム原子百分率は、50パーセントより大きいことを特徴とすることと、
    前記半導体基板上に直接設けられた複数のダミーフィンからなるダミーフィン構造と、
    を備えた集積回路構造。
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150130087A (ko) * 2014-05-13 2015-11-23 삼성전자주식회사 반도체 장치 및 그 제조 방법
WO2016064765A1 (en) * 2014-10-20 2016-04-28 Applied Materials, Inc. Methods and apparatus for forming horizontal gate all around device structures
JP2020521319A (ja) * 2017-05-23 2020-07-16 インターナショナル・ビジネス・マシーンズ・コーポレーションＩｎｔｅｒｎａｔｉｏｎａｌ Ｂｕｓｉｎｅｓｓ Ｍａｃｈｉｎｅｓ Ｃｏｒｐｏｒａｔｉｏｎ Ｖｆｅｔアーキテクチャ内の超長チャネル・デバイス

Families Citing this family (468)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8313999B2 (en) * 2009-12-23 2012-11-20 Intel Corporation Multi-gate semiconductor device with self-aligned epitaxial source and drain
US8367498B2 (en) 2010-10-18 2013-02-05 Taiwan Semiconductor Manufacturing Company, Ltd. Fin-like field effect transistor (FinFET) device and method of manufacturing same
US8552503B2 (en) * 2010-11-30 2013-10-08 United Microelectronics Corp. Strained silicon structure
US9484432B2 (en) 2010-12-21 2016-11-01 Intel Corporation Contact resistance reduction employing germanium overlayer pre-contact metalization
US8901537B2 (en) 2010-12-21 2014-12-02 Intel Corporation Transistors with high concentration of boron doped germanium
US8561003B2 (en) 2011-07-29 2013-10-15 Synopsys, Inc. N-channel and P-channel finFET cell architecture with inter-block insulator
US8595661B2 (en) * 2011-07-29 2013-11-26 Synopsys, Inc. N-channel and p-channel finFET cell architecture
JP5713837B2 (ja) 2011-08-10 2015-05-07 株式会社東芝 半導体装置の製造方法
US8731017B2 (en) * 2011-08-12 2014-05-20 Acorn Technologies, Inc. Tensile strained semiconductor photon emission and detection devices and integrated photonics system
US8969154B2 (en) * 2011-08-23 2015-03-03 Micron Technology, Inc. Methods for fabricating semiconductor device structures and arrays of vertical transistor devices
US9064892B2 (en) 2011-08-30 2015-06-23 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices utilizing partially doped stressor film portions and methods for forming the same
US8890207B2 (en) * 2011-09-06 2014-11-18 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET design controlling channel thickness
CN102983079B (zh) * 2011-09-06 2017-12-19 联华电子股份有限公司 半导体工艺
US8624326B2 (en) 2011-10-20 2014-01-07 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET device and method of manufacturing same
US9099388B2 (en) * 2011-10-21 2015-08-04 Taiwan Semiconductor Manufacturing Company, Ltd. III-V multi-channel FinFETs
US8658505B2 (en) * 2011-12-14 2014-02-25 International Business Machines Corporation Embedded stressors for multigate transistor devices
US8896066B2 (en) * 2011-12-20 2014-11-25 Intel Corporation Tin doped III-V material contacts
DE112011105972B4 (de) 2011-12-20 2023-05-25 Google Llc III-V Schichten für N-Typ- und P-Typ-MOS-Source/Drain-Kontakte
US8987794B2 (en) 2011-12-23 2015-03-24 Intel Coporation Non-planar gate all-around device and method of fabrication thereof
US8815712B2 (en) * 2011-12-28 2014-08-26 Taiwan Semiconductor Manufacturing Company, Ltd. Method for epitaxial re-growth of semiconductor region
US8486770B1 (en) * 2011-12-30 2013-07-16 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming CMOS FinFET device
US8759184B2 (en) 2012-01-09 2014-06-24 Taiwan Semiconductor Manufacturing Company, Ltd. FinFETs and the methods for forming the same
US8609499B2 (en) * 2012-01-09 2013-12-17 Taiwan Semiconductor Manufacturing Company, Ltd. FinFETs and the methods for forming the same
US8659097B2 (en) * 2012-01-16 2014-02-25 Taiwan Semiconductor Manufacturing Company, Ltd. Control fin heights in FinFET structures
US8759916B2 (en) * 2012-01-27 2014-06-24 International Business Machines Corporation Field effect transistor and a method of forming the transistor
US8809178B2 (en) * 2012-02-29 2014-08-19 Globalfoundries Inc. Methods of forming bulk FinFET devices with replacement gates so as to reduce punch through leakage currents
US10515956B2 (en) 2012-03-01 2019-12-24 Taiwan Semiconductor Manufacturing Company Semiconductor devices having Fin Field Effect Transistor (FinFET) structures and manufacturing and design methods thereof
US9105744B2 (en) * 2012-03-01 2015-08-11 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices having inactive fin field effect transistor (FinFET) structures and manufacturing and design methods thereof
US8853037B2 (en) * 2012-03-14 2014-10-07 GlobalFoundries, Inc. Methods for fabricating integrated circuits
CN103367430B (zh) * 2012-03-29 2016-11-02 中芯国际集成电路制造(上海)有限公司 晶体管以及形成方法
US9647066B2 (en) * 2012-04-24 2017-05-09 Taiwan Semiconductor Manufacturing Company, Ltd. Dummy FinFET structure and method of making same
US9171929B2 (en) * 2012-04-25 2015-10-27 Taiwan Semiconductor Manufacturing Company, Ltd. Strained structure of semiconductor device and method of making the strained structure
US8647439B2 (en) * 2012-04-26 2014-02-11 Applied Materials, Inc. Method of epitaxial germanium tin alloy surface preparation
TWI451494B (zh) * 2012-06-06 2014-09-01 Nat Applied Res Laboratories 浮橋結構及其製造方法
US8697515B2 (en) 2012-06-06 2014-04-15 Taiwan Semiconductor Manufacturing Company, Ltd. Method of making a FinFET device
US8669147B2 (en) 2012-06-11 2014-03-11 Globalfoundries Inc. Methods of forming high mobility fin channels on three dimensional semiconductor devices
US8729634B2 (en) * 2012-06-15 2014-05-20 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET with high mobility and strain channel
KR101909204B1 (ko) 2012-06-25 2018-10-17 삼성전자 주식회사 내장된 스트레인-유도 패턴을 갖는 반도체 소자 및 그 형성 방법
US9142400B1 (en) 2012-07-17 2015-09-22 Stc.Unm Method of making a heteroepitaxial layer on a seed area
US8617961B1 (en) * 2012-07-18 2013-12-31 International Business Machines Corporation Post-gate isolation area formation for fin field effect transistor device
US9728464B2 (en) 2012-07-27 2017-08-08 Intel Corporation Self-aligned 3-D epitaxial structures for MOS device fabrication
US8912070B2 (en) * 2012-08-16 2014-12-16 The Institute of Microelectronics Chinese Academy of Science Method for manufacturing semiconductor device
CN103594495A (zh) * 2012-08-16 2014-02-19 中国科学院微电子研究所 半导体器件及其制造方法
US8993402B2 (en) * 2012-08-16 2015-03-31 International Business Machines Corporation Method of manufacturing a body-contacted SOI FINFET
KR20140034347A (ko) * 2012-08-31 2014-03-20 삼성전자주식회사 반도체 장치 및 그 제조 방법
CN103715087B (zh) * 2012-09-29 2016-12-21 中芯国际集成电路制造(上海)有限公司 鳍式场效应晶体管及其制造方法
US20140106529A1 (en) * 2012-10-16 2014-04-17 Stmicroelectronics (Crolles 2) Sas Finfet device with silicided source-drain regions and method of making same using a two step anneal
US8975674B2 (en) 2012-11-09 2015-03-10 National Applied Research Laboratories Bridge structure
CN103855096B (zh) * 2012-12-04 2016-06-29 中芯国际集成电路制造(上海)有限公司 Cmos晶体管的形成方法
US9397217B2 (en) * 2012-12-28 2016-07-19 Taiwan Semiconductor Manufacturing Company, Ltd. Contact structure of non-planar semiconductor device
US8809171B2 (en) * 2012-12-28 2014-08-19 Taiwan Semiconductor Manufacturing Company, Ltd. Methods for forming FinFETs having multiple threshold voltages
TWI584482B (zh) * 2013-01-08 2017-05-21 聯華電子股份有限公司 互補式金氧半場效電晶體結構、金氧半場效電晶體結構及其製作方法
US9536792B2 (en) * 2013-01-10 2017-01-03 United Microelectronics Corp. Complementary metal oxide semiconductor field effect transistor, metal oxide semiconductor field effect transistor and manufacturing method thereof
US9466668B2 (en) 2013-02-08 2016-10-11 Taiwan Semiconductor Manufacturing Company, Ltd. Inducing localized strain in vertical nanowire transistors
US9209066B2 (en) * 2013-03-01 2015-12-08 Taiwan Semiconductor Manufacturing Company, Ltd. Isolation structure of semiconductor device
US9831345B2 (en) * 2013-03-11 2017-11-28 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET with rounded source/drain profile
US8927373B2 (en) 2013-03-13 2015-01-06 Samsung Electronics Co, Ltd. Methods of fabricating non-planar transistors including current enhancing structures
US9087724B2 (en) * 2013-03-21 2015-07-21 International Business Machines Corporation Method and structure for finFET CMOS
US8912056B2 (en) * 2013-04-11 2014-12-16 International Business Machines Corporation Dual epitaxial integration for FinFETS
US8940602B2 (en) * 2013-04-11 2015-01-27 International Business Machines Corporation Self-aligned structure for bulk FinFET
US9209247B2 (en) 2013-05-10 2015-12-08 Taiwan Semiconductor Manufacturing Company, Ltd. Self-aligned wrapped-around structure
US9171952B2 (en) 2013-05-30 2015-10-27 Globalfoundries U.S. 2 Llc Low gate-to-drain capacitance fully merged finFET
KR20140148189A (ko) * 2013-06-21 2014-12-31 삼성전자주식회사 반도체 소자 및 그 제조 방법
US9349863B2 (en) 2013-08-07 2016-05-24 Globalfoundries Inc. Anchored stress-generating active semiconductor regions for semiconductor-on-insulator finfet
US9401274B2 (en) 2013-08-09 2016-07-26 Taiwan Semiconductor Manufacturing Company Limited Methods and systems for dopant activation using microwave radiation
US9515184B2 (en) 2013-09-12 2016-12-06 Taiwan Semiconductor Manufacturing Company Limited Semiconductor arrangement with multiple-height fins and substrate trenches
KR102175854B1 (ko) * 2013-11-14 2020-11-09 삼성전자주식회사 반도체 소자 및 이를 제조하는 방법
US9716176B2 (en) 2013-11-26 2017-07-25 Samsung Electronics Co., Ltd. FinFET semiconductor devices including recessed source-drain regions on a bottom semiconductor layer and methods of fabricating the same
KR102085525B1 (ko) 2013-11-27 2020-03-09 삼성전자 주식회사 반도체 장치 및 그 제조 방법
KR102178830B1 (ko) 2013-12-05 2020-11-13 삼성전자 주식회사 스페이서를 갖는 반도체 소자
US9281401B2 (en) * 2013-12-20 2016-03-08 Intel Corporation Techniques and configurations to reduce transistor gate short defects
US9711645B2 (en) * 2013-12-26 2017-07-18 International Business Machines Corporation Method and structure for multigate FinFET device epi-extension junction control by hydrogen treatment
US9324717B2 (en) * 2013-12-28 2016-04-26 Texas Instruments Incorporated High mobility transistors
US9853154B2 (en) 2014-01-24 2017-12-26 Taiwan Semiconductor Manufacturing Company Ltd. Embedded source or drain region of transistor with downward tapered region under facet region
US9515172B2 (en) 2014-01-28 2016-12-06 Samsung Electronics Co., Ltd. Semiconductor devices having isolation insulating layers and methods of manufacturing the same
US20150214331A1 (en) * 2014-01-30 2015-07-30 Globalfoundries Inc. Replacement metal gate including dielectric gate material
US9246005B2 (en) * 2014-02-12 2016-01-26 International Business Machines Corporation Stressed channel bulk fin field effect transistor
US9236483B2 (en) * 2014-02-12 2016-01-12 Qualcomm Incorporated FinFET with backgate, without punchthrough, and with reduced fin height variation
US9548303B2 (en) 2014-03-13 2017-01-17 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET devices with unique fin shape and the fabrication thereof
EP3120388A4 (en) 2014-03-21 2017-11-29 Intel Corporation Techniques for integration of ge-rich p-mos source/drain contacts
US9159812B1 (en) 2014-03-26 2015-10-13 Taiwan Semiconductor Manufacturing Co., Ltd. Fin sidewall removal to enlarge epitaxial source/drain volume
KR102204072B1 (ko) * 2014-03-27 2021-01-18 인텔 코포레이션 게르마늄 주석 채널 트랜지스터들
US9882027B2 (en) 2014-03-27 2018-01-30 Intel Corporation Confined epitaxial regions for semiconductor devices and methods of fabricating semiconductor devices having confined epitaxial regions
US9653461B2 (en) * 2014-03-28 2017-05-16 Taiwan Semiconductor Manufacturing Company, Ltd. FinFETs with low source/drain contact resistance
KR102208063B1 (ko) 2014-04-22 2021-01-27 삼성전자주식회사 반도체 장치 및 그 제조 방법
US9461170B2 (en) 2014-04-23 2016-10-04 Taiwan Semiconductor Manufacturing Company Ltd. FinFET with ESD protection
US9257428B2 (en) * 2014-04-24 2016-02-09 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for FinFET device
CN105097806A (zh) * 2014-04-24 2015-11-25 中芯国际集成电路制造(上海)有限公司 一种半导体器件和电子装置
US9721955B2 (en) * 2014-04-25 2017-08-01 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for SRAM FinFET device having an oxide feature
KR102160100B1 (ko) * 2014-05-27 2020-09-25 삼성전자 주식회사 반도체 장치 제조 방법
US9831341B2 (en) 2014-06-16 2017-11-28 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for integrated circuit
US9299803B2 (en) 2014-07-16 2016-03-29 Taiwan Semiconductor Manufacturing Company, Ltd. Method for semiconductor device fabrication
US9659827B2 (en) 2014-07-21 2017-05-23 Samsung Electronics Co., Ltd. Methods of manufacturing semiconductor devices by forming source/drain regions before gate electrode separation
US9679990B2 (en) * 2014-08-08 2017-06-13 Globalfoundries Inc. Semiconductor structure(s) with extended source/drain channel interfaces and methods of fabrication
US10263108B2 (en) 2014-08-22 2019-04-16 Taiwan Semiconductor Manufacturing Company, Ltd. Metal-insensitive epitaxy formation
DE102015100860A1 (de) 2014-08-22 2016-02-25 Taiwan Semiconductor Manufacturing Company, Ltd. Metallunempfindliche Epitaxiebildung
US9385197B2 (en) 2014-08-29 2016-07-05 Taiwan Semiconductor Manufacturing Co., Ltd Semiconductor structure with contact over source/drain structure and method for forming the same
KR102311937B1 (ko) 2014-09-23 2021-10-14 삼성전자주식회사 콘택 플러그를 갖는 반도체 소자 및 그 형성 방법
US9299787B1 (en) 2014-09-29 2016-03-29 International Business Machines Corporation Forming IV fins and III-V fins on insulator
US9450093B2 (en) 2014-10-15 2016-09-20 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device structure and manufacturing method thereof
US9324623B1 (en) 2014-11-26 2016-04-26 Samsung Electronics Co., Ltd. Method of manufacturing semiconductor device having active fins
US9472470B2 (en) * 2014-12-09 2016-10-18 GlobalFoundries, Inc. Methods of forming FinFET with wide unmerged source drain EPI
US9660059B2 (en) 2014-12-12 2017-05-23 International Business Machines Corporation Fin replacement in a field-effect transistor
US9780214B2 (en) 2014-12-22 2017-10-03 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device including Fin- FET and manufacturing method thereof
WO2016105404A1 (en) * 2014-12-23 2016-06-30 Intel Corporation Thin channel region on wide subfin
US9515071B2 (en) 2014-12-24 2016-12-06 Taiwan Semiconductor Manufacturing Company, Ltd. Asymmetric source/drain depths
US9876114B2 (en) 2014-12-30 2018-01-23 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for 3D FinFET metal gate
US9991384B2 (en) 2015-01-15 2018-06-05 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device including fin structures and manufacturing method thereof
US9391078B1 (en) 2015-01-16 2016-07-12 Taiwan Semiconductor Manufacturing Company, Ltd. Method and structure for finFET devices
US9349859B1 (en) 2015-01-29 2016-05-24 Taiwan Semiconductor Manufacturing Company, Ltd. Top metal pads as local interconnectors of vertical transistors
US9406680B1 (en) 2015-02-13 2016-08-02 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device including fin structures and manufacturing method thereof
US9570613B2 (en) 2015-02-13 2017-02-14 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of FinFET device
US9991343B2 (en) 2015-02-26 2018-06-05 Taiwan Semiconductor Manufacturing Company Ltd. LDD-free semiconductor structure and manufacturing method of the same
US9564493B2 (en) 2015-03-13 2017-02-07 Taiwan Semiconductor Manufacturing Company, Ltd. Devices having a semiconductor material that is semimetal in bulk and methods of forming the same
US9577101B2 (en) * 2015-03-13 2017-02-21 Taiwan Semiconductor Manufacturing Company, Ltd. Source/drain regions for fin field effect transistors and methods of forming same
US9406675B1 (en) 2015-03-16 2016-08-02 Taiwan Semiconductor Manufacturing Company Ltd. FinFET structure and method of manufacturing the same
DE102015106397B4 (de) * 2015-04-16 2019-08-22 Taiwan Semiconductor Manufacturing Company, Ltd. Verfahren und Systeme zur Dotierstoffaktivierung mithilfe von Mikrowellenbestrahlung
US9570557B2 (en) 2015-04-29 2017-02-14 Taiwan Semiconductor Manufacturing Co., Ltd. Tilt implantation for STI formation in FinFET structures
US9583485B2 (en) 2015-05-15 2017-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Fin field effect transistor (FinFET) device structure with uneven gate structure and method for forming the same
US10483262B2 (en) 2015-05-15 2019-11-19 Taiwan Semiconductor Manufacturing Co., Ltd. Dual nitride stressor for semiconductor device and method of manufacturing
US9530889B2 (en) 2015-05-21 2016-12-27 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
KR102367995B1 (ko) 2015-06-12 2022-02-25 인텔 코포레이션 다양한 채널 재료를 사용하여 동일한 다이 상에 트랜지스터들을 형성하기 위한 기술들
US9647071B2 (en) 2015-06-15 2017-05-09 Taiwan Semiconductor Manufacturing Company, Ltd. FINFET structures and methods of forming the same
US9449975B1 (en) 2015-06-15 2016-09-20 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET devices and methods of forming
US9685553B2 (en) * 2015-06-22 2017-06-20 Globalfoundries Inc. Generating tensile strain in bulk finFET channel
KR102449901B1 (ko) 2015-06-23 2022-09-30 삼성전자주식회사 집적회로 소자 및 그 제조 방법
US9685368B2 (en) 2015-06-26 2017-06-20 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnect structure having an etch stop layer over conductive lines
US9818872B2 (en) 2015-06-30 2017-11-14 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-gate device and method of fabrication thereof
US9548361B1 (en) * 2015-06-30 2017-01-17 Stmicroelectronics, Inc. Method of using a sacrificial gate structure to make a metal gate FinFET transistor
TWI671819B (zh) * 2015-07-01 2019-09-11 United Microelectronics Corp. 半導體裝置及其製作方法
US9583623B2 (en) 2015-07-31 2017-02-28 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device including fin structures disposed over buffer structures and manufacturing method thereof
CN105047719B (zh) * 2015-08-11 2018-03-06 西安电子科技大学 基于InAsN‑GaAsSb材料的交错型异质结隧穿场效应晶体管
US9666581B2 (en) 2015-08-21 2017-05-30 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET with source/drain structure and method of fabrication thereof
US10164096B2 (en) 2015-08-21 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10032873B2 (en) 2015-09-15 2018-07-24 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of forming the same
US9647122B2 (en) 2015-09-15 2017-05-09 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of forming the same
DE102016113434B4 (de) 2015-09-15 2020-11-19 Taiwan Semiconductor Manufacturing Company, Ltd. Halbleitervorrichtung und Verfahren zum Ausbilden von dieser
US9680017B2 (en) 2015-09-16 2017-06-13 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device including Fin FET and manufacturing method thereof
WO2017048275A1 (en) 2015-09-18 2017-03-23 Intel Corporation Deuterium-based passivation of non-planar transistor interfaces
US9607838B1 (en) 2015-09-18 2017-03-28 Taiwan Semiconductor Manufacturing Co., Ltd. Enhanced channel strain to reduce contact resistance in NMOS FET devices
US10121858B2 (en) 2015-10-30 2018-11-06 Taiwan Semiconductor Manufacturing Company, Ltd. Elongated semiconductor structure planarization
US9960273B2 (en) 2015-11-16 2018-05-01 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit structure with substrate isolation and un-doped channel
US20170140992A1 (en) * 2015-11-16 2017-05-18 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor and method for fabricating the same
KR102402771B1 (ko) 2015-12-11 2022-05-26 삼성전자주식회사 반도체 장치 및 이의 제조 방법
EP3394896B1 (en) 2015-12-24 2025-10-08 Tahoe Research, Ltd. Methods of forming doped source/drain contacts and structures formed thereby
US11264452B2 (en) 2015-12-29 2022-03-01 Taiwan Semiconductor Manufacturing Company, Ltd. Hetero-tunnel field-effect transistor (TFET) having a tunnel barrier formed directly above channel region, directly below first source/drain region and adjacent gate electrode
US10490552B2 (en) 2015-12-29 2019-11-26 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET device having flat-top epitaxial features and method of making the same
DE102016119024B4 (de) 2015-12-29 2023-12-21 Taiwan Semiconductor Manufacturing Co. Ltd. Verfahren zum Herstellen einer FinFET-Vorrichtung mit epitaktischen Elementen mit flacher Oberseite
KR102532202B1 (ko) 2016-01-22 2023-05-12 삼성전자 주식회사 반도체 소자
US10438948B2 (en) 2016-01-29 2019-10-08 Taiwan Semiconductor Manufacturing Co., Ltd. Method and device of preventing merging of resist-protection-oxide (RPO) between adjacent structures
US9825036B2 (en) 2016-02-23 2017-11-21 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and method for semiconductor device
US10002867B2 (en) 2016-03-07 2018-06-19 Taiwan Semiconductor Manufacturing Co., Ltd. Fin-type field effect transistor structure and manufacturing method thereof
US9685554B1 (en) * 2016-03-07 2017-06-20 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor and semiconductor device
US9748389B1 (en) 2016-03-25 2017-08-29 Taiwan Semiconductor Manufacturing Co., Ltd. Method for semiconductor device fabrication with improved source drain epitaxy
US10340383B2 (en) 2016-03-25 2019-07-02 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device having stressor layer
US10163898B2 (en) 2016-04-25 2018-12-25 Taiwan Semiconductor Manufacturing Company, Ltd. FinFETs and methods of forming FinFETs
US10079291B2 (en) 2016-05-04 2018-09-18 Taiwan Semiconductor Manufacturing Co., Ltd. Fin-type field effect transistor structure and manufacturing method thereof
US9899382B2 (en) 2016-06-01 2018-02-20 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor (FinFET) device structure with different gate profile and method for forming the same
US10008414B2 (en) 2016-06-28 2018-06-26 Taiwan Semiconductor Manufacturing Co., Ltd. System and method for widening Fin widths for small pitch FinFET devices
US10115624B2 (en) 2016-06-30 2018-10-30 Taiwan Semiconductor Manufacturing Co., Ltd. Method of semiconductor integrated circuit fabrication
US10164098B2 (en) 2016-06-30 2018-12-25 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing semiconductor device
US9640540B1 (en) 2016-07-19 2017-05-02 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and method for an SRAM circuit
US9870926B1 (en) 2016-07-28 2018-01-16 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10032877B2 (en) 2016-08-02 2018-07-24 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET and method of forming same
US10157918B2 (en) 2016-08-03 2018-12-18 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US10008418B2 (en) 2016-09-30 2018-06-26 Taiwan Semiconductor Manufacturing Co., Ltd. Method of semiconductor integrated circuit fabrication
US10026840B2 (en) 2016-10-13 2018-07-17 Taiwan Semiconductor Manufacturing Co., Ltd. Structure of semiconductor device with source/drain structures
US10510618B2 (en) 2016-10-24 2019-12-17 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET EPI channels having different heights on a stepped substrate
US9865589B1 (en) 2016-10-31 2018-01-09 Taiwan Semiconductor Manufacturing Co., Ltd. System and method of fabricating ESD FinFET with improved metal landing in the drain
US10872889B2 (en) 2016-11-17 2020-12-22 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor component and fabricating method thereof
US10529861B2 (en) 2016-11-18 2020-01-07 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET structures and methods of forming the same
US11437516B2 (en) 2016-11-28 2022-09-06 Taiwan Semiconductor Manufacturing Co., Ltd. Mechanisms for growing epitaxy structure of finFET device
US10879354B2 (en) 2016-11-28 2020-12-29 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and forming method thereof
US10276677B2 (en) 2016-11-28 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure and method for forming the same
US10115808B2 (en) 2016-11-29 2018-10-30 Taiwan Semiconductor Manufacturing Company, Ltd. finFET device and methods of forming
CN108122976B (zh) * 2016-11-29 2020-11-03 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法、以及sram
US9812363B1 (en) 2016-11-29 2017-11-07 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET device and method of forming same
US10490661B2 (en) 2016-11-29 2019-11-26 Taiwan Semiconductor Manufacturing Company, Ltd. Dopant concentration boost in epitaxially formed material
US10515951B2 (en) 2016-11-29 2019-12-24 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US9935173B1 (en) 2016-11-29 2018-04-03 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device structure
US10510888B2 (en) 2016-11-29 2019-12-17 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10290546B2 (en) 2016-11-29 2019-05-14 Taiwan Semiconductor Manufacturing Co., Ltd. Threshold voltage adjustment for a gate-all-around semiconductor structure
US9991165B1 (en) 2016-11-29 2018-06-05 Taiwan Semiconductor Manufacturing Company, Ltd. Asymmetric source/drain epitaxy
US10453943B2 (en) 2016-11-29 2019-10-22 Taiwan Semiconductor Manufacturing Company, Ltd. FETS and methods of forming FETS
US11011634B2 (en) * 2016-11-30 2021-05-18 Taiwan Semiconductor Manufacturing Co., Ltd. Elongated source/drain region structure in finFET device
US9865595B1 (en) 2016-12-14 2018-01-09 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET device with epitaxial structures that wrap around the fins and the method of fabricating the same
US10276691B2 (en) 2016-12-15 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. Conformal transfer doping method for fin-like field effect transistor
DE102017117970B4 (de) 2016-12-15 2022-08-25 Taiwan Semiconductor Manufacturing Co., Ltd. Halbleiter-Bauelement mit verschmolzenen epitaxialen Strukturelementen mit einer bogenähnlichen Unterseite und Verfahren zu dessen Herstellung
TWI746673B (zh) 2016-12-15 2021-11-21 台灣積體電路製造股份有限公司 鰭式場效電晶體裝置及其共形傳遞摻雜方法
US10431670B2 (en) 2016-12-15 2019-10-01 Taiwan Semiconductor Manufacturing Co., Ltd Source and drain formation technique for fin-like field effect transistor
US10510762B2 (en) 2016-12-15 2019-12-17 Taiwan Semiconductor Manufacturing Co., Ltd. Source and drain formation technique for fin-like field effect transistor
US10049936B2 (en) 2016-12-15 2018-08-14 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device having merged epitaxial features with Arc-like bottom surface and method of making the same
US10319722B2 (en) 2017-03-22 2019-06-11 International Business Machines Corporation Contact formation in semiconductor devices
US10347581B2 (en) 2017-03-22 2019-07-09 International Business Machines Corporation Contact formation in semiconductor devices
US10483266B2 (en) 2017-04-20 2019-11-19 Taiwan Semiconductor Manufacturing Company, Ltd. Flexible merge scheme for source/drain epitaxy regions
US10475908B2 (en) 2017-04-25 2019-11-12 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of fabricating the same
US10373879B2 (en) 2017-04-26 2019-08-06 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with contracted isolation feature and formation method thereof
US10522643B2 (en) 2017-04-26 2019-12-31 Taiwan Semiconductor Manufacturing Co., Ltd. Device and method for tuning threshold voltage by implementing different work function metals in different segments of a gate
US10522417B2 (en) 2017-04-27 2019-12-31 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET device with different liners for PFET and NFET and method of fabricating thereof
US10319832B2 (en) 2017-04-28 2019-06-11 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET device and method of forming same
US10043712B1 (en) 2017-05-17 2018-08-07 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure and manufacturing method thereof
US10312160B2 (en) * 2017-05-26 2019-06-04 International Business Machines Corporation Gate-last semiconductor fabrication with negative-tone resolution enhancement
US10147787B1 (en) 2017-05-31 2018-12-04 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure and manufacturing method thereof
US10727131B2 (en) 2017-06-16 2020-07-28 Taiwan Semiconductor Manufacturing Co., Ltd. Source and drain epitaxy re-shaping
US10516037B2 (en) 2017-06-30 2019-12-24 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming shaped source/drain epitaxial layers of a semiconductor device
US10269940B2 (en) 2017-06-30 2019-04-23 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
TWI743252B (zh) 2017-06-30 2021-10-21 台灣積體電路製造股份有限公司 鰭狀場效電晶體裝置與其形成方法
DE102017127204A1 (de) 2017-06-30 2019-01-03 Taiwan Semiconductor Manufacturing Co., Ltd. Verfahren zum ausbilden geformter epitaktischer source-/drain-schichten eines halbleiterbauteils
US10483267B2 (en) 2017-06-30 2019-11-19 Taiwan Semiconductor Manufacturing Co., Ltd. Eight-transistor static random-access memory, layout thereof, and method for manufacturing the same
US10347764B2 (en) 2017-06-30 2019-07-09 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device with multi-layered source/drain regions having different dopant concentrations and manufacturing method thereof
US11107811B2 (en) 2017-07-01 2021-08-31 Intel Corporation Metallization structures under a semiconductor device layer
US10727226B2 (en) 2017-07-18 2020-07-28 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure and method for forming the same
US10529833B2 (en) 2017-08-28 2020-01-07 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit with a fin and gate structure and method making the same
US10483378B2 (en) 2017-08-31 2019-11-19 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial features confined by dielectric fins and spacers
US10522409B2 (en) 2017-08-31 2019-12-31 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor (FinFET) device structure with dummy fin structure and method for forming the same
US10276718B2 (en) 2017-08-31 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET having a relaxation prevention anchor
US10163904B1 (en) 2017-08-31 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure
US10629679B2 (en) 2017-08-31 2020-04-21 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and a semiconductor device
US10453753B2 (en) 2017-08-31 2019-10-22 Taiwan Semiconductor Manufacturing Co., Ltd. Using a metal-containing layer as an etching stop layer and to pattern source/drain regions of a FinFET
US10505040B2 (en) 2017-09-25 2019-12-10 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device having a gate with ferroelectric layer
US10403545B2 (en) 2017-09-28 2019-09-03 Taiwan Semiconductor Manufacturing Co., Ltd. Power reduction in finFET structures
US10535736B2 (en) 2017-09-28 2020-01-14 Taiwan Semiconductor Manufacturing Co., Ltd. Fully strained channel
US10153278B1 (en) 2017-09-28 2018-12-11 Taiwan Semiconductor Manufacturing Co., Ltd. Fin-type field effect transistor structure and manufacturing method thereof
US10516032B2 (en) 2017-09-28 2019-12-24 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device
CN111033753B (zh) * 2017-09-29 2025-09-23 英特尔公司 针对锗nmos晶体管的用以减少源极/漏极扩散的经掺杂的sti
US10804367B2 (en) 2017-09-29 2020-10-13 Taiwan Semiconductor Manufacturing Co., Ltd. Gate stacks for stack-fin channel I/O devices and nanowire channel core devices
US10510580B2 (en) 2017-09-29 2019-12-17 Taiwan Semiconductor Manufacturing Company, Ltd. Dummy fin structures and methods of forming same
US10483372B2 (en) 2017-09-29 2019-11-19 Taiwan Semiconductor Manufacturing Co., Ltd. Spacer structure with high plasma resistance for semiconductor devices
US10505021B2 (en) 2017-09-29 2019-12-10 Taiwan Semiconductor Manufacturing Company, Ltd. FinFet device and method of forming the same
DE102018121263B4 (de) 2017-09-29 2025-05-22 Taiwan Semiconductor Manufacturing Company, Ltd. Dummy-finnenstrukturen und verfahren zu deren herstellung
US10276697B1 (en) 2017-10-27 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. Negative capacitance FET with improved reliability performance
US10522557B2 (en) 2017-10-30 2019-12-31 Taiwan Semiconductor Manufacturing Co., Ltd. Surface topography by forming spacer-like components
US10847634B2 (en) 2017-10-30 2020-11-24 Taiwan Semiconductor Manufacturing Company, Ltd. Field effect transistor and method of forming the same
US10163623B1 (en) 2017-10-31 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Etch method with surface modification treatment for forming semiconductor structure
US10355105B2 (en) 2017-10-31 2019-07-16 Taiwan Semiconductor Manufacturing Company, Ltd. Fin field-effect transistors and methods of forming the same
US11404413B2 (en) 2017-11-08 2022-08-02 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and manufacturing method thereof
US10680084B2 (en) 2017-11-10 2020-06-09 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial structures for fin-like field effect transistors
US10847622B2 (en) 2017-11-13 2020-11-24 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming source/drain structure with first and second epitaxial layers
US10680106B2 (en) 2017-11-15 2020-06-09 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming source/drain epitaxial stacks
US10840358B2 (en) 2017-11-15 2020-11-17 Taiwan Semiconductor Manufacturing Co., Ltd. Method for manufacturing semiconductor structure with source/drain structure having modified shape
US10366915B2 (en) 2017-11-15 2019-07-30 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET devices with embedded air gaps and the fabrication thereof
US10510619B2 (en) 2017-11-17 2019-12-17 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and method for manufacturing the same
US10672613B2 (en) 2017-11-22 2020-06-02 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming semiconductor structure and semiconductor device
US10497628B2 (en) 2017-11-22 2019-12-03 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of forming epitaxial structures in fin-like field effect transistors
US10374038B2 (en) 2017-11-24 2019-08-06 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device source/drain region with arsenic-containing barrier region
US10971493B2 (en) 2017-11-27 2021-04-06 Taiwan Semiconductor Manufacturing Company Ltd. Integrated circuit device with high mobility and system of forming the integrated circuit
US10840154B2 (en) 2017-11-28 2020-11-17 Taiwan Semiconductor Manufacturing Co.. Ltd. Method for forming semiconductor structure with high aspect ratio
US11114549B2 (en) 2017-11-29 2021-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure cutting process and structures formed thereby
US10804378B2 (en) 2017-11-29 2020-10-13 Taiwan Semiconductor Manufacturing Co., Ltd. Method for semiconductor device fabrication with improved epitaxial source/drain proximity control
US10672889B2 (en) 2017-11-30 2020-06-02 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10497778B2 (en) 2017-11-30 2019-12-03 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
DE102018106581B4 (de) 2017-11-30 2020-07-09 Taiwan Semiconductor Manufacturing Co. Ltd. Halbleiter-Bauelement und Verfahren zu dessen Herstellung
US10319581B1 (en) 2017-11-30 2019-06-11 Taiwan Semiconductor Manufacturing Co., Ltd. Cut metal gate process for reducing transistor spacing
US10510874B2 (en) * 2017-11-30 2019-12-17 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device
DE102018127448B4 (de) 2017-11-30 2023-06-22 Taiwan Semiconductor Manufacturing Co. Ltd. Metallschienenleiter für nicht-planare Halbleiter-Bauelemente
US10930753B2 (en) * 2017-11-30 2021-02-23 Intel Corporation Trench isolation for advanced integrated circuit structure fabrication
US10923595B2 (en) 2017-11-30 2021-02-16 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device having a SiGe epitaxial layer containing Ga
US10748774B2 (en) 2017-11-30 2020-08-18 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10446669B2 (en) 2017-11-30 2019-10-15 Taiwan Semiconductor Manufacturing Co., Ltd. Source and drain surface treatment for multi-gate field effect transistors
US10510894B2 (en) 2017-11-30 2019-12-17 Taiwan Semiconductor Manufacturing Co., Ltd. Isolation structure having different distances to adjacent FinFET devices
TWI711120B (zh) * 2017-11-30 2020-11-21 台灣積體電路製造股份有限公司 非平面半導體元件、積體電路、鰭式場效應電晶體陣列
CN109872972A (zh) * 2017-12-04 2019-06-11 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
US11398479B2 (en) * 2017-12-29 2022-07-26 Intel Corporation Heterogeneous Ge/III-V CMOS transistor structures
US10461171B2 (en) 2018-01-12 2019-10-29 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device with metal gate stacks
US10522656B2 (en) 2018-02-28 2019-12-31 Taiwan Semiconductor Manufacturing Co., Ltd Forming epitaxial structures in fin field effect transistors
US10510776B2 (en) 2018-03-29 2019-12-17 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device with common active area and method for manufacturing the same
US10854615B2 (en) 2018-03-30 2020-12-01 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET having non-merging epitaxially grown source/drains
US10522546B2 (en) 2018-04-20 2019-12-31 Taiwan Semiconductor Manufacturing Co., Ltd FinFET devices with dummy fins having multiple dielectric layers
US11270994B2 (en) 2018-04-20 2022-03-08 Taiwan Semiconductor Manufacturing Company, Ltd. Gate structure, fin field-effect transistor, and method of manufacturing fin-field effect transistor
US10629706B2 (en) 2018-05-10 2020-04-21 Taiwan Semiconductor Manufacturing Co., Ltd. Fin and gate dimensions for optimizing gate formation
US10269655B1 (en) 2018-05-30 2019-04-23 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US10644125B2 (en) 2018-06-14 2020-05-05 Taiwan Semiconductor Manufacturing Co., Ltd. Metal gates and manufacturing methods thereof
US10522390B1 (en) 2018-06-21 2019-12-31 Taiwan Semiconductor Manufacturing Co., Ltd. Shallow trench isolation for integrated circuits
US10861973B2 (en) 2018-06-27 2020-12-08 Taiwan Semiconductor Manufacturing Co., Ltd. Negative capacitance transistor with a diffusion blocking layer
US10790391B2 (en) 2018-06-27 2020-09-29 Taiwan Semiconductor Manufacturing Co., Ltd. Source/drain epitaxial layer profile
US11302535B2 (en) 2018-06-27 2022-04-12 Taiwan Semiconductor Manufacturing Co., Ltd. Performing annealing process to improve fin quality of a FinFET semiconductor
US10388771B1 (en) 2018-06-28 2019-08-20 Taiwan Semiconductor Manufacturing Co., Ltd. Method and device for forming cut-metal-gate feature
US10790352B2 (en) 2018-06-28 2020-09-29 Taiwan Semiconductor Manufacturing Co., Ltd. High density capacitor implemented using FinFET
US10840375B2 (en) 2018-06-29 2020-11-17 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuits with channel-strain liner
US11296225B2 (en) 2018-06-29 2022-04-05 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET device and method of forming same
US11114566B2 (en) 2018-07-12 2021-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of manufacturing the same
US10861969B2 (en) 2018-07-16 2020-12-08 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming FinFET structure with reduced Fin buckling
US10700180B2 (en) 2018-07-27 2020-06-30 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure and manufacturing method thereof
US10535667B1 (en) 2018-07-30 2020-01-14 Taiwan Semiconductor Manufacturing Co., Ltd. Memory array and semiconductor chip
US10707333B2 (en) 2018-07-30 2020-07-07 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10886226B2 (en) 2018-07-31 2021-01-05 Taiwan Semiconductor Manufacturing Co, Ltd. Conductive contact having staircase barrier layers
US10629490B2 (en) 2018-07-31 2020-04-21 Taiwan Semiconductor Manufacturing Co., Ltd. Fin-type field-effect transistor device and method of fabricating the same
US11069692B2 (en) 2018-07-31 2021-07-20 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET SRAM cells with dielectric fins
US10879393B2 (en) 2018-08-14 2020-12-29 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of fabricating semiconductor devices having gate structure with bent sidewalls
US10763255B2 (en) 2018-08-14 2020-09-01 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US11024550B2 (en) 2018-08-16 2021-06-01 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US11264380B2 (en) 2018-08-27 2022-03-01 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of manufacturing the same
US10886269B2 (en) 2018-09-18 2021-01-05 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
DE102019118061A1 (de) 2018-09-19 2020-03-19 Taiwan Semiconductor Manufacturing Co., Ltd. Selektive doppelsilizidherstellung unter verwendung eines maskenlosen herstellungsprozessablaufs
US10998241B2 (en) 2018-09-19 2021-05-04 Taiwan Semiconductor Manufacturing Co., Ltd. Selective dual silicide formation using a maskless fabrication process flow
US11437385B2 (en) 2018-09-24 2022-09-06 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET SRAM cells with reduced fin pitch
US11626507B2 (en) 2018-09-26 2023-04-11 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing FinFETs having barrier layers with specified SiGe doping concentration
US10991630B2 (en) 2018-09-27 2021-04-27 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US10879355B2 (en) 2018-09-27 2020-12-29 Taiwan Semiconductor Manufacturing Company, Ltd. Profile design for improved device performance
US11349008B2 (en) 2018-09-27 2022-05-31 Taiwan Semiconductor Manufacturing Co., Ltd. Negative capacitance transistor having a multilayer ferroelectric structure or a ferroelectric layer with a gradient doping profile
US11171209B2 (en) 2018-09-27 2021-11-09 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of manufacture
US10867861B2 (en) 2018-09-28 2020-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Fin field-effect transistor device and method of forming the same
US11289583B2 (en) 2018-09-28 2022-03-29 Taiwan Semiconductor Manufacturing Co., Ltd. High aspect ratio gate structure formation
DE102019121270B4 (de) * 2018-09-28 2024-05-08 Taiwan Semiconductor Manufacturing Co., Ltd. Bildungsverfahren einer Halbleitervorrichtung mit Finnenstrukturen
US10950725B2 (en) 2018-09-28 2021-03-16 Taiwan Semiconductor Manufacturing Company, Ltd. Epitaxial source/drain structure and method of forming same
US10680075B2 (en) 2018-09-28 2020-06-09 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device including source/drain epitaxial layer having facets and manufacturing method thereof
US11094597B2 (en) 2018-09-28 2021-08-17 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device with fin structures
US11264237B2 (en) 2018-09-28 2022-03-01 Taiwan Semiconductor Manufacturing Company, Ltd. Method of epitaxy and semiconductor device
US11222958B2 (en) 2018-09-28 2022-01-11 Taiwan Semiconductor Manufacturing Co., Ltd. Negative capacitance transistor with external ferroelectric structure
US10872805B2 (en) 2018-09-28 2020-12-22 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10971605B2 (en) 2018-10-22 2021-04-06 Taiwan Semiconductor Manufacturing Co., Ltd. Dummy dielectric fin design for parasitic capacitance reduction
US10833167B2 (en) 2018-10-26 2020-11-10 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor (finFET) device structure and method for forming the same
US10950730B2 (en) 2018-10-31 2021-03-16 Taiwan Semiconductor Manufacturing Co., Ltd. Merged source/drain features
US10868183B2 (en) 2018-10-31 2020-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET device and methods of forming the same
US11296077B2 (en) 2018-11-19 2022-04-05 Taiwan Semiconductor Manufacturing Company, Ltd. Transistors with recessed silicon cap and method forming same
US10868185B2 (en) 2018-11-27 2020-12-15 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and method of forming the same
US11257928B2 (en) 2018-11-27 2022-02-22 Taiwan Semiconductor Manufacturing Company, Ltd. Method for epitaxial growth and device
US11101347B2 (en) 2018-11-29 2021-08-24 Taiwan Semiconductor Manufacturing Company, Ltd. Confined source/drain epitaxy regions and method forming same
US11101360B2 (en) 2018-11-29 2021-08-24 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and a semiconductor device
DE102019118613B4 (de) 2018-11-29 2024-12-05 Taiwan Semiconductor Manufacturing Company, Ltd. Begrenzte source-/drain-epitaxiebereiche und verfahren zu deren herstellung
US11164944B2 (en) 2018-11-30 2021-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing a semiconductor device
US11088150B2 (en) 2019-01-28 2021-08-10 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US11183574B2 (en) 2019-05-24 2021-11-23 Taiwan Semiconductor Manufacturing Co., Ltd. Work function layers for transistor gate electrodes
US10879379B2 (en) 2019-05-30 2020-12-29 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-gate device and related methods
US11069578B2 (en) 2019-05-31 2021-07-20 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing a semiconductor device
US11004725B2 (en) 2019-06-14 2021-05-11 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming a FinFET device with gaps in the source/drain region
US11056573B2 (en) 2019-06-14 2021-07-06 Taiwan Semiconductor Manufacturing Company, Ltd. Implantation and annealing for semiconductor device
US10868174B1 (en) 2019-06-14 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Devices with strained isolation features
US11133223B2 (en) 2019-07-16 2021-09-28 Taiwan Semiconductor Manufacturing Co., Ltd. Selective epitaxy
US11049774B2 (en) 2019-07-18 2021-06-29 Taiwan Semiconductor Manufacturing Company, Ltd. Hybrid source drain regions formed based on same Fin and methods forming same
US11282934B2 (en) 2019-07-26 2022-03-22 Taiwan Semiconductor Manufacturing Co., Ltd. Structure for metal gate electrode and method of fabrication
US10985266B2 (en) 2019-08-20 2021-04-20 Taiwan Semiconductor Manufacturing Company, Ltd. Method of gap filling for semiconductor device
US11011372B2 (en) 2019-08-23 2021-05-18 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices and methods of manufacture
US11101180B2 (en) 2019-08-23 2021-08-24 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of manufacture
US11133416B2 (en) 2019-08-23 2021-09-28 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of forming semiconductor devices having plural epitaxial layers
US11133386B2 (en) 2019-08-27 2021-09-28 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-layer fin structure
US11239368B2 (en) 2019-08-30 2022-02-01 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US11489063B2 (en) 2019-08-30 2022-11-01 Taiwan Semiconductor Manufacturing Co., Ltd Method of manufacturing a source/drain feature in a multi-gate semiconductor structure
US11094821B2 (en) 2019-09-17 2021-08-17 Taiwan Semiconductor Manufacturing Co., Ltd. Transistor structure and method with strain effect
US11342231B2 (en) 2019-09-17 2022-05-24 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit device with low threshold voltage
US11088249B2 (en) 2019-09-17 2021-08-10 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device with implant and method of manufacturing same
US11646311B2 (en) 2019-09-23 2023-05-09 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of fabricating the same
US11164868B2 (en) 2019-09-24 2021-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device
US11670551B2 (en) 2019-09-26 2023-06-06 Taiwan Semiconductor Manufacturing Co., Ltd. Interface trap charge density reduction
US11621224B2 (en) 2019-09-26 2023-04-04 Taiwan Semiconductor Manufacturing Co. Ltd. Contact features and methods of fabricating the same in semiconductor devices
US11482610B2 (en) 2019-09-26 2022-10-25 Taiwan Semiconductor Manufacturing Co. Method of forming a gate structure
US11728405B2 (en) 2019-09-28 2023-08-15 Taiwan Semiconductor Manufacturing Co., Ltd. Stress-inducing silicon liner in semiconductor devices
US11018257B2 (en) 2019-10-18 2021-05-25 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure having a plurality of threshold voltages and method of forming the same
US11522085B2 (en) 2019-10-18 2022-12-06 Taiwan Semiconductor Manufacturing Company, Ltd. Ferroelectric semiconductor device and method
US11502197B2 (en) 2019-10-18 2022-11-15 Taiwan Semiconductor Manufacturing Co., Ltd. Source and drain epitaxial layers
US11417748B2 (en) 2019-10-30 2022-08-16 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of fabricating a semiconductor device
US11515212B2 (en) 2019-10-30 2022-11-29 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing semiconductor devices having controlled S/D epitaxial shape
US11081401B2 (en) 2019-11-29 2021-08-03 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method for manufacturing the same
US11282944B2 (en) 2019-12-30 2022-03-22 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and a semiconductor device
US11233156B2 (en) 2020-01-15 2022-01-25 Taiwan Semiconductor Manufacturing Co., Ltd. Memory device and manufacturing method thereof
US11244899B2 (en) 2020-01-17 2022-02-08 Taiwan Semiconductor Manufacturing Co., Ltd. Butted contacts and methods of fabricating the same in semiconductor devices
US11322603B2 (en) 2020-01-21 2022-05-03 Taiwan Semiconductor Manufacturing Co., Ltd. Anti-punch-through doping on source/drain region
US11251268B2 (en) 2020-01-28 2022-02-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with doped structure
US11522050B2 (en) 2020-01-30 2022-12-06 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and a semiconductor device
DE102020132562B4 (de) 2020-01-30 2024-02-22 Taiwan Semiconductor Manufacturing Co., Ltd. Verfahren zur herstellung einer halbleitervorrichtung und halbleitervorrichtung
DE102020119609A1 (de) 2020-01-31 2021-08-05 Taiwan Semiconductor Manufacturing Co., Ltd. Neue gatestrukturen zur einstellung der grenzspannung
US11610822B2 (en) 2020-01-31 2023-03-21 Taiwan Semiconductor Manufacturing Co., Ltd. Structures for tuning threshold voltage
US11862712B2 (en) 2020-02-19 2024-01-02 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of semiconductor device fabrication including growing epitaxial features using different carrier gases
US11557590B2 (en) 2020-02-19 2023-01-17 Taiwan Semiconductor Manufacturing Co., Ltd. Transistor gate profile optimization
DE102020116347B4 (de) 2020-02-19 2025-03-13 Taiwan Semiconductor Manufacturing Co., Ltd. Vorrichtung und optimierung eines transistor-gate-profils
US11257950B2 (en) 2020-02-24 2022-02-22 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and manufacturing method for the semiconductor structure
US11715781B2 (en) 2020-02-26 2023-08-01 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices with improved capacitors
US11769820B2 (en) 2020-02-27 2023-09-26 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of manufacturing a FinFET by forming a hollow area in the epitaxial source/drain region
US11404570B2 (en) 2020-02-27 2022-08-02 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices with embedded ferroelectric field effect transistors
TW202139270A (zh) 2020-02-27 2021-10-16 台灣積體電路製造股份有限公司 半導體裝置的形成方法
US11374128B2 (en) 2020-02-27 2022-06-28 Taiwan Semiconductor Manufacturing Co., Ltd. Method and structure for air gap inner spacer in gate-all-around devices
CN113113359A (zh) 2020-02-27 2021-07-13 台湾积体电路制造股份有限公司 半导体装置的制造方法
US11515211B2 (en) 2020-02-27 2022-11-29 Taiwan Semiconductor Manufacturing Co., Ltd. Cut EPI process and structures
DE102020115553A1 (de) 2020-02-27 2021-09-02 Taiwan Semiconductor Manufacturing Co., Ltd. Cut-epi-verfahren und strukturen
DE102020128844A1 (de) 2020-03-30 2021-09-30 Taiwan Semiconductor Manufacturing Co. Ltd. Source/drain-epitaxieschichten für transistoren
US11677013B2 (en) 2020-03-30 2023-06-13 Taiwan Semiconductor Manufacturing Co., Ltd. Source/drain epitaxial layers for transistors
DE102020126060B4 (de) 2020-03-31 2025-05-22 Taiwan Semiconductor Manufacturing Co., Ltd. Mehrschichtige high-k-gatedielektrikumstruktur und verfahren
US12022643B2 (en) 2020-03-31 2024-06-25 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-layer high-k gate dielectric structure
US11271096B2 (en) 2020-04-01 2022-03-08 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming fin field effect transistor device structure
US11309398B2 (en) 2020-04-01 2022-04-19 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device and manufacturing method for the semiconductor device
US11387365B2 (en) 2020-04-01 2022-07-12 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device for recessed fin structure having rounded corners
CN113053878B (zh) 2020-04-09 2025-05-06 台湾积体电路制造股份有限公司 半导体器件及其制造方法
US11955370B2 (en) 2020-04-28 2024-04-09 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices and methods of manufacture
US12538558B2 (en) * 2020-04-29 2026-01-27 Taiwan Semiconductor Manufacturing Company, Ltd. Source/drain epitaxial structures for high voltage transistors
DE102021109275A1 (de) 2020-05-13 2021-11-18 Taiwan Semiconductor Manufacturing Co., Ltd. Gate-all-around-vorrichtungen mit selbstausgerichteter abdeckung zwischen kanal und rückseitiger leistungsschiene
US11670692B2 (en) 2020-05-13 2023-06-06 Taiwan Semiconductor Manufacturing Co., Ltd. Gate-all-around devices having self-aligned capping between channel and backside power rail
US11791218B2 (en) 2020-05-20 2023-10-17 Taiwan Semiconductor Manufacturing Co., Ltd. Dipole patterning for CMOS devices
TWI817126B (zh) * 2020-05-22 2023-10-01 台灣積體電路製造股份有限公司 包含鰭式場效電晶體的半導體裝置
US11749681B2 (en) * 2020-05-22 2023-09-05 Taiwan Semiconductor Manufacturing Company Limited Fin field-effect transistor and method of forming the same
US11682711B2 (en) 2020-05-28 2023-06-20 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device having multi-layered gate spacers
US11532731B2 (en) 2020-05-28 2022-12-20 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices and methods of manufacture
DE102021102939A1 (de) 2020-05-28 2021-12-02 Taiwan Semiconductor Manufacturing Co., Ltd. Halbleiterbauelemente und herstellungsverfahren
US11302798B2 (en) 2020-05-29 2022-04-12 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices with air gate spacer and air gate cap
US11935793B2 (en) 2020-05-29 2024-03-19 Taiwan Semiconductor Manufacturing Co., Ltd. Dual dopant source/drain regions and methods of forming same
US11374006B2 (en) 2020-06-12 2022-06-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of forming the same
US11296080B2 (en) 2020-06-15 2022-04-05 Taiwan Semiconductor Manufacturing Co., Ltd. Source/drain regions of semiconductor devices and methods of forming the same
US11489075B2 (en) 2020-06-29 2022-11-01 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and a semiconductor device
US11315924B2 (en) 2020-06-30 2022-04-26 Taiwan Semiconductor Manufacturing Co., Ltd. Isolation structure for preventing unintentional merging of epitaxially grown source/drain
US11264513B2 (en) 2020-06-30 2022-03-01 Taiwan Semiconductor Manufacturing Co., Ltd. Isolation structures for transistors
US11764221B2 (en) 2020-07-30 2023-09-19 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of manufacture
US11355587B2 (en) 2020-08-06 2022-06-07 Taiwan Semiconductor Manufacturing Co., Ltd. Source/drain EPI structure for device boost
US11728391B2 (en) 2020-08-07 2023-08-15 Taiwan Semiconductor Manufacturing Co., Ltd. 2d-channel transistor structure with source-drain engineering
US11557518B2 (en) 2020-08-12 2023-01-17 Taiwan Semiconductor Manufacturing Co., Ltd. Gapfill structure and manufacturing methods thereof
US12046479B2 (en) 2020-08-13 2024-07-23 Taiwan Semiconductor Manufacturing Company, Ltd. Nitride-containing STI liner for SiGe channel
US11315834B2 (en) 2020-08-13 2022-04-26 Taiwan Semiconductor Manufacturing Co., Ltd. FinFETs with epitaxy regions having mixed wavy and non-wavy portions
US12266572B2 (en) 2020-08-13 2025-04-01 Taiwan Semiconductor Manufacturing Co., Ltd. Embedded stressors in epitaxy source/drain regions
US11610890B2 (en) 2020-08-13 2023-03-21 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxy regions extending below STI regions and profiles thereof
US12002766B2 (en) 2020-08-18 2024-06-04 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure having isolations between fins and comprising materials with different thermal expansion coefficients (CTE)
US11508621B2 (en) 2020-08-21 2022-11-22 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and a semiconductor device
US11615962B2 (en) 2020-09-11 2023-03-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structures and methods thereof
US11600533B2 (en) 2020-09-18 2023-03-07 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device fabrication methods and structures thereof
US20230223408A1 (en) * 2020-09-18 2023-07-13 Xidian University Cmos structure, and fabrication methods of finfet cmos, fd cmos and gaa cmos
JP2023546734A (ja) * 2020-09-18 2023-11-07 西安電子科技大学 ＣＭＯＳ構造及びＦｉｎＦＥＴ ＣＭＯＳ、ＦＤ ＣＭＯＳ、ＧＡＡ ＣＭＯＳの製造方法
US11349002B2 (en) 2020-09-25 2022-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Isolation structure for for isolating epitaxially grown source/drain regions and method of fabrication thereof
US11688807B2 (en) 2020-10-27 2023-06-27 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and methods of forming
US11495463B2 (en) 2020-10-27 2022-11-08 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US11521971B2 (en) 2020-11-13 2022-12-06 Taiwan Semiconductor Manufacturing Company, Ltd. Gate dielectric having a non-uniform thickness profile
US11527622B2 (en) 2021-01-08 2022-12-13 Taiwan Semiconductor Manufacturing Company, Ltd. Effective work function tuning via silicide induced interface dipole modulation for metal gates
US11784218B2 (en) 2021-01-08 2023-10-10 Taiwan Semiconductor Manufacturing Company, Ltd. Gate air spacer protection during source/drain via hole etching
US11658216B2 (en) 2021-01-14 2023-05-23 Taiwan Semiconductor Manufacturing Company, Ltd. Method and structure for metal gate boundary isolation
US12035532B2 (en) 2021-01-15 2024-07-09 Taiwan Semiconductor Manufacturing Company, Ltd. Memory array and memory device
US11532522B2 (en) 2021-01-19 2022-12-20 Taiwan Semiconductor Manufacturing Company, Ltd. Source/drain EPI structure for improving contact quality
US11626495B2 (en) 2021-02-26 2023-04-11 Taiwan Semiconductor Manufacturing Company, Ltd. Protective liner for source/drain contact to prevent electrical bridging while minimizing resistance
US11855143B2 (en) 2021-02-26 2023-12-26 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structures and methods thereof
US11887985B2 (en) 2021-03-04 2024-01-30 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method
US11876119B2 (en) 2021-03-05 2024-01-16 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device with gate isolation features and fabrication method of the same
US12087837B2 (en) 2021-03-05 2024-09-10 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device with backside contact and methods of forming such
US11688768B2 (en) 2021-03-05 2023-06-27 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit structure with source/drain spacers
US12477778B2 (en) 2021-03-11 2025-11-18 Taiwan Semiconductor Manufacturing Company, Ltd. Epitaxial structure for source/drain contact for semiconductor structure having fin structure
US12034054B2 (en) 2021-03-25 2024-07-09 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method for forming the same
US11984483B2 (en) 2021-03-26 2024-05-14 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of manufacturing thereof
US12142640B2 (en) 2021-03-31 2024-11-12 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structures with multiple threshold voltage offerings and methods thereof
US11600534B2 (en) 2021-03-31 2023-03-07 Taiwan Semiconductor Manufacturing Co., Ltd. Source/drain structures and method of forming
US12170327B2 (en) 2021-03-31 2024-12-17 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and manufacturing method of the same
US11658074B2 (en) 2021-04-08 2023-05-23 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for FinFET device with source/drain modulation
US11784228B2 (en) 2021-04-09 2023-10-10 Taiwan Semiconductor Manufacturing Company, Ltd. Process and structure for source/drain contacts
US11855092B2 (en) 2021-04-16 2023-12-26 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of forming same
US11996484B2 (en) 2021-05-13 2024-05-28 Taiwan Semiconductor Manufacturing Company, Ltd. Nano-sheet-based complementary metal-oxide-semiconductor devices with asymmetric inner spacers
US12477764B2 (en) 2021-05-13 2025-11-18 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a source/drain of a semiconductor device using multiple implantation processes
US11688645B2 (en) 2021-06-17 2023-06-27 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and formation method of semiconductor device with fin structures
US12495579B2 (en) 2021-06-24 2025-12-09 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with leakage current suppression and method of forming the same
US12426347B2 (en) 2021-07-09 2025-09-23 Taiwan Semiconductor Manufacturing Company Ltd. Multi-gate transistor channel height adjustment
US11942329B2 (en) 2021-07-23 2024-03-26 Taiwan Semiconductor Manufacturing Company, Ltd. Formation method of semiconductor device with dielectric isolation structure
US12446269B2 (en) 2021-07-30 2025-10-14 Taiwan Semiconductor Manufacturing Company, Ltd. Strained nanosheets on silicon-on-insulator substrate
US12107163B2 (en) 2021-08-19 2024-10-01 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure having dislocation stress memorization and methods of forming the same
US12020991B2 (en) 2021-08-26 2024-06-25 Taiwan Semiconductor Manufacturing Co., Ltd. High-k gate dielectric and method forming same
US11990511B2 (en) 2021-08-27 2024-05-21 Taiwan Semiconductor Manufacturing Co., Ltd. Source/drain device and method of forming thereof
US12040384B2 (en) 2021-08-27 2024-07-16 Taiwan Semiconductor Manufacturing Co., Ltd. Source/drain structure for semiconductor device
US11920254B2 (en) 2021-08-30 2024-03-05 Taiwan Semiconductor Manufacturing Co., Ltd. Detection of contact formation between a substrate and contact pins in an electroplating system
US11710781B2 (en) 2021-08-30 2023-07-25 Taiwan Semiconductor Manufacturing Co., Ltd. Growth process and methods thereof
US12278276B2 (en) 2021-08-30 2025-04-15 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-channel devices and method with anti-punch through process
US11749570B2 (en) 2021-08-31 2023-09-05 Taiwan Semiconductor Manufacturing Company, Ltd. Etch monitoring and performing
US12268023B2 (en) 2021-08-31 2025-04-01 Taiwan Semiconductor Manufacturing Company, Ltd. Devices with improved operational current and reduced leakage current
US12484251B2 (en) 2021-10-14 2025-11-25 Taiwan Semiconductor Manufacturing Company, Ltd Multigate device structure with engineered gate
US12249539B2 (en) 2021-12-06 2025-03-11 Taiwan Semiconductor Manufacturing Company, Ltd. Multigate device structure with engineered cladding and method making the same
US12087616B2 (en) 2022-01-27 2024-09-10 Taiwan Semiconductor Manufacturing Company, Ltd. Air gap formation method
US12464773B2 (en) 2022-02-22 2025-11-04 Taiwan Semiconductor Manufacturing Company, Ltd. Formation of a semiconductor device with a gate containing a metal oxide layer using an oxidation process
US12336249B2 (en) 2022-03-16 2025-06-17 Taiwan Semiconductor Manufacturing Company, Ltd. Gate spacer and formation method thereof
US12288723B2 (en) 2022-05-11 2025-04-29 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and manufacturing method thereof
US12349446B2 (en) 2022-05-16 2025-07-01 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and formation method of semiconductor device with epitaxial structures
US12463152B2 (en) 2022-06-06 2025-11-04 Taiwan Semiconductor Manufacturing Company, Ltd Multi-channel device with seal ring structure and method making the same
US12191145B2 (en) 2022-06-07 2025-01-07 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and formation method thereof
US12349363B2 (en) 2022-06-25 2025-07-01 Taiwan Semiconductor Manufacturing Company, Ltd. Ferroelectric device and methods of forming the same
US12414355B2 (en) 2022-07-07 2025-09-09 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and manufacturing method thereof
US12349447B2 (en) 2022-07-14 2025-07-01 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and formation method of semiconductor device with dielectric fin
US12300719B2 (en) 2022-08-12 2025-05-13 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and formation method of semiconductor device with isolation structure
US12520559B2 (en) 2022-08-18 2026-01-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device
US12532492B2 (en) 2023-04-18 2026-01-20 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and formation method of semiconductor device with epitaxial structures

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003224268A (ja) * 2002-01-31 2003-08-08 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2007258485A (ja) * 2006-03-23 2007-10-04 Toshiba Corp 半導体装置及びその製造方法
JP2008226901A (ja) * 2007-03-08 2008-09-25 Toshiba Corp 縦型スピントランジスタ及びその製造方法
JP2008235350A (ja) * 2007-03-16 2008-10-02 Matsushita Electric Ind Co Ltd 半導体集積回路
JP2009060104A (ja) * 2007-08-31 2009-03-19 Samsung Electronics Co Ltd ピン電界効果トランジスタ及びその製造方法
JP2009514248A (ja) * 2005-10-31 2009-04-02 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド 高共有半径の原子を含む埋め込まれた半導体層を利用したシリコンベースのトランジスタに歪みを生成する技術
JP2009517867A (ja) * 2005-12-27 2009-04-30 インテル・コーポレーション リセスのあるストレイン領域を有すマルチゲートデバイス
JP2009194068A (ja) * 2008-02-13 2009-08-27 Toshiba Corp 半導体装置
JP2009200118A (ja) * 2008-02-19 2009-09-03 Sony Corp 半導体装置、および、その製造方法

Family Cites Families (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000243854A (ja) * 1999-02-22 2000-09-08 Toshiba Corp 半導体装置及びその製造方法
US7358121B2 (en) * 2002-08-23 2008-04-15 Intel Corporation Tri-gate devices and methods of fabrication
US6706571B1 (en) 2002-10-22 2004-03-16 Advanced Micro Devices, Inc. Method for forming multiple structures in a semiconductor device
US7214991B2 (en) * 2002-12-06 2007-05-08 Taiwan Semiconductor Manufacturing Co., Ltd. CMOS inverters configured using multiple-gate transistors
US6943405B2 (en) 2003-07-01 2005-09-13 International Business Machines Corporation Integrated circuit having pairs of parallel complementary FinFETs
US7078300B2 (en) * 2003-09-27 2006-07-18 International Business Machines Corporation Thin germanium oxynitride gate dielectric for germanium-based devices
US20050082624A1 (en) * 2003-10-20 2005-04-21 Evgeni Gousev Germanate gate dielectrics for semiconductor devices
KR100513405B1 (ko) 2003-12-16 2005-09-09 삼성전자주식회사 핀 트랜지스터의 형성 방법
US7250645B1 (en) * 2004-01-22 2007-07-31 Advanced Micro Devices, Inc. Reversed T-shaped FinFET
KR100781538B1 (ko) 2004-02-07 2007-12-03 삼성전자주식회사 성능이 향상된 멀티 게이트 트랜지스터용 액티브 구조의제조 방법, 이에 의해 제조된 액티브 구조 및 멀티 게이트트랜지스터
KR100618852B1 (ko) 2004-07-27 2006-09-01 삼성전자주식회사 높은 동작 전류를 갖는 반도체 소자
US7361958B2 (en) * 2004-09-30 2008-04-22 Intel Corporation Nonplanar transistors with metal gate electrodes
US7518196B2 (en) * 2005-02-23 2009-04-14 Intel Corporation Field effect transistor with narrow bandgap source and drain regions and method of fabrication
JP4648096B2 (ja) 2005-06-03 2011-03-09 株式会社東芝 半導体装置の製造方法
US8466490B2 (en) 2005-07-01 2013-06-18 Synopsys, Inc. Enhanced segmented channel MOS transistor with multi layer regions
US7605449B2 (en) 2005-07-01 2009-10-20 Synopsys, Inc. Enhanced segmented channel MOS transistor with high-permittivity dielectric isolation material
US7508031B2 (en) 2005-07-01 2009-03-24 Synopsys, Inc. Enhanced segmented channel MOS transistor with narrowed base regions
US7807523B2 (en) 2005-07-01 2010-10-05 Synopsys, Inc. Sequential selective epitaxial growth
US7247887B2 (en) 2005-07-01 2007-07-24 Synopsys, Inc. Segmented channel MOS transistor
US7190050B2 (en) 2005-07-01 2007-03-13 Synopsys, Inc. Integrated circuit on corrugated substrate
US7265008B2 (en) 2005-07-01 2007-09-04 Synopsys, Inc. Method of IC production using corrugated substrate
US8188551B2 (en) 2005-09-30 2012-05-29 Infineon Technologies Ag Semiconductor devices and methods of manufacture thereof
US20070090416A1 (en) * 2005-09-28 2007-04-26 Doyle Brian S CMOS devices with a single work function gate electrode and method of fabrication
US20070069302A1 (en) * 2005-09-28 2007-03-29 Been-Yih Jin Method of fabricating CMOS devices having a single work function gate electrode by band gap engineering and article made thereby
US7452768B2 (en) * 2005-10-25 2008-11-18 Freescale Semiconductor, Inc. Multiple device types including an inverted-T channel transistor and method therefor
JP2007250665A (ja) * 2006-03-14 2007-09-27 Toshiba Corp 半導体装置及びその製造方法
US8648403B2 (en) * 2006-04-21 2014-02-11 International Business Machines Corporation Dynamic memory cell structures
US7629603B2 (en) * 2006-06-09 2009-12-08 Intel Corporation Strain-inducing semiconductor regions
US7629220B2 (en) * 2006-06-30 2009-12-08 Freescale Semiconductor, Inc. Method for forming a semiconductor device and structure thereof
JP4271210B2 (ja) * 2006-06-30 2009-06-03 株式会社東芝 電界効果トランジスタ、集積回路素子、及びそれらの製造方法
FR2905197B1 (fr) * 2006-08-25 2008-12-19 Commissariat Energie Atomique Procede de realisation d'un dispositif comportant une structure dotee d'un ou plusieurs micro-fils ou nano-fils a base d'un compose de si et de ge, par condensation germanium.
US7968952B2 (en) * 2006-12-29 2011-06-28 Intel Corporation Stressed barrier plug slot contact structure for transistor performance enhancement
JP4473889B2 (ja) 2007-04-26 2010-06-02 株式会社東芝 半導体装置
JP2008282901A (ja) 2007-05-09 2008-11-20 Sony Corp 半導体装置および半導体装置の製造方法
US8450165B2 (en) 2007-05-14 2013-05-28 Intel Corporation Semiconductor device having tipless epitaxial source/drain regions
US7939862B2 (en) 2007-05-30 2011-05-10 Synopsys, Inc. Stress-enhanced performance of a FinFet using surface/channel orientations and strained capping layers
DE102007030053B4 (de) * 2007-06-29 2011-07-21 Advanced Micro Devices, Inc., Calif. Reduzieren der pn-Übergangskapazität in einem Transistor durch Absenken von Drain- und Source-Gebieten
JP2009018492A (ja) 2007-07-11 2009-01-29 Nisca Corp 製本装置及び画像形成システム
US7674669B2 (en) 2007-09-07 2010-03-09 Micron Technology, Inc. FIN field effect transistor
JP5203669B2 (ja) 2007-10-22 2013-06-05 株式会社東芝 半導体装置およびその製造方法
US7939447B2 (en) * 2007-10-26 2011-05-10 Asm America, Inc. Inhibitors for selective deposition of silicon containing films
US20090152589A1 (en) * 2007-12-17 2009-06-18 Titash Rakshit Systems And Methods To Increase Uniaxial Compressive Stress In Tri-Gate Transistors
EP2257974A1 (en) * 2008-02-26 2010-12-08 Nxp B.V. Method for manufacturing semiconductor device and semiconductor device
US8048723B2 (en) * 2008-12-05 2011-11-01 Taiwan Semiconductor Manufacturing Company, Ltd. Germanium FinFETs having dielectric punch-through stoppers
US20100127333A1 (en) * 2008-11-21 2010-05-27 Taiwan Semiconductor Manufacturing Company, Ltd. novel layout architecture for performance enhancement
US8058692B2 (en) * 2008-12-29 2011-11-15 Taiwan Semiconductor Manufacturing Company, Ltd. Multiple-gate transistors with reverse T-shaped fins
JP4724231B2 (ja) 2009-01-29 2011-07-13 株式会社東芝 半導体装置およびその製造方法
US7687339B1 (en) * 2009-02-04 2010-03-30 Advanced Micro Devices, Inc. Methods for fabricating FinFET structures having different channel lengths
US8053299B2 (en) * 2009-04-17 2011-11-08 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabrication of a FinFET element
US8487354B2 (en) * 2009-08-21 2013-07-16 Taiwan Semiconductor Manufacturing Company, Ltd. Method for improving selectivity of epi process
US8890260B2 (en) * 2009-09-04 2014-11-18 Taiwan Semiconductor Manufacturing Company, Ltd. Polysilicon design for replacement gate technology
US8367528B2 (en) * 2009-11-17 2013-02-05 Asm America, Inc. Cyclical epitaxial deposition and etch
US20110147840A1 (en) * 2009-12-23 2011-06-23 Cea Stephen M Wrap-around contacts for finfet and tri-gate devices
US8294211B2 (en) * 2010-01-14 2012-10-23 GlobalFoundries, Inc. Semiconductor transistor device structure with back side gate contact plugs, and related manufacturing method
US8373228B2 (en) * 2010-01-14 2013-02-12 GlobalFoundries, Inc. Semiconductor transistor device structure with back side source/drain contact plugs, and related manufacturing method
US8609495B2 (en) * 2010-04-08 2013-12-17 Taiwan Semiconductor Manufacturing Company, Ltd. Hybrid gate process for fabricating finfet device
US8729627B2 (en) * 2010-05-14 2014-05-20 Taiwan Semiconductor Manufacturing Company, Ltd. Strained channel integrated circuit devices
US8236659B2 (en) * 2010-06-16 2012-08-07 Taiwan Semiconductor Manufacturing Company, Ltd. Source and drain feature profile for improving device performance and method of manufacturing same
US8216906B2 (en) * 2010-06-30 2012-07-10 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing integrated circuit device with well controlled surface proximity

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003224268A (ja) * 2002-01-31 2003-08-08 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2009514248A (ja) * 2005-10-31 2009-04-02 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド 高共有半径の原子を含む埋め込まれた半導体層を利用したシリコンベースのトランジスタに歪みを生成する技術
JP2009517867A (ja) * 2005-12-27 2009-04-30 インテル・コーポレーション リセスのあるストレイン領域を有すマルチゲートデバイス
JP2007258485A (ja) * 2006-03-23 2007-10-04 Toshiba Corp 半導体装置及びその製造方法
JP2008226901A (ja) * 2007-03-08 2008-09-25 Toshiba Corp 縦型スピントランジスタ及びその製造方法
JP2008235350A (ja) * 2007-03-16 2008-10-02 Matsushita Electric Ind Co Ltd 半導体集積回路
JP2009060104A (ja) * 2007-08-31 2009-03-19 Samsung Electronics Co Ltd ピン電界効果トランジスタ及びその製造方法
JP2009194068A (ja) * 2008-02-13 2009-08-27 Toshiba Corp 半導体装置
JP2009200118A (ja) * 2008-02-19 2009-09-03 Sony Corp 半導体装置、および、その製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150130087A (ko) * 2014-05-13 2015-11-23 삼성전자주식회사 반도체 장치 및 그 제조 방법
KR102158961B1 (ko) * 2014-05-13 2020-09-24 삼성전자 주식회사 반도체 장치 및 그 제조 방법
WO2016064765A1 (en) * 2014-10-20 2016-04-28 Applied Materials, Inc. Methods and apparatus for forming horizontal gate all around device structures
JP2020521319A (ja) * 2017-05-23 2020-07-16 インターナショナル・ビジネス・マシーンズ・コーポレーションＩｎｔｅｒｎａｔｉｏｎａｌ Ｂｕｓｉｎｅｓｓ Ｍａｃｈｉｎｅｓ Ｃｏｒｐｏｒａｔｉｏｎ Ｖｆｅｔアーキテクチャ内の超長チャネル・デバイス
JP7018963B2 (ja) 2017-05-23 2022-02-14 インターナショナル・ビジネス・マシーンズ・コーポレーション Ｖｆｅｔアーキテクチャ内の超長チャネル・デバイス

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