JP2013115153A - Polishing composition - Google Patents
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- JP2013115153A JP2013115153A JP2011258344A JP2011258344A JP2013115153A JP 2013115153 A JP2013115153 A JP 2013115153A JP 2011258344 A JP2011258344 A JP 2011258344A JP 2011258344 A JP2011258344 A JP 2011258344A JP 2013115153 A JP2013115153 A JP 2013115153A
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- 238000005498 polishing Methods 0.000 title claims abstract description 117
- 239000000203 mixture Substances 0.000 title claims abstract description 67
- 150000001875 compounds Chemical class 0.000 claims abstract description 38
- 239000000463 material Substances 0.000 claims abstract description 37
- 239000007800 oxidant agent Substances 0.000 claims abstract description 24
- 239000002798 polar solvent Substances 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims description 11
- 239000002210 silicon-based material Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 abstract description 8
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 abstract description 6
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 abstract description 6
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 abstract description 6
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 abstract description 5
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 abstract description 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 abstract description 4
- 229910001870 ammonium persulfate Inorganic materials 0.000 abstract description 4
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 abstract description 2
- MSFGZHUJTJBYFA-UHFFFAOYSA-M sodium dichloroisocyanurate Chemical compound [Na+].ClN1C(=O)[N-]C(=O)N(Cl)C1=O MSFGZHUJTJBYFA-UHFFFAOYSA-M 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- CEJLBZWIKQJOAT-UHFFFAOYSA-N dichloroisocyanuric acid Chemical compound ClN1C(=O)NC(=O)N(Cl)C1=O CEJLBZWIKQJOAT-UHFFFAOYSA-N 0.000 description 3
- 238000002845 discoloration Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 2
- VAZSKTXWXKYQJF-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)OOS([O-])=O VAZSKTXWXKYQJF-UHFFFAOYSA-N 0.000 description 2
- SXDBWCPKPHAZSM-UHFFFAOYSA-N bromic acid Chemical compound OBr(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- QWPPOHNGKGFGJK-UHFFFAOYSA-N hypochlorous acid Chemical compound ClO QWPPOHNGKGFGJK-UHFFFAOYSA-N 0.000 description 2
- 239000010954 inorganic particle Substances 0.000 description 2
- 239000011146 organic particle Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 2
- 239000003586 protic polar solvent Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- GLVYLTSKTCWWJR-UHFFFAOYSA-N 2-carbonoperoxoylbenzoic acid Chemical compound OOC(=O)C1=CC=CC=C1C(O)=O GLVYLTSKTCWWJR-UHFFFAOYSA-N 0.000 description 1
- LJGHYPLBDBRCRZ-UHFFFAOYSA-N 3-(3-aminophenyl)sulfonylaniline Chemical compound NC1=CC=CC(S(=O)(=O)C=2C=C(N)C=CC=2)=C1 LJGHYPLBDBRCRZ-UHFFFAOYSA-N 0.000 description 1
- YNJSNEKCXVFDKW-UHFFFAOYSA-N 3-(5-amino-1h-indol-3-yl)-2-azaniumylpropanoate Chemical compound C1=C(N)C=C2C(CC(N)C(O)=O)=CNC2=C1 YNJSNEKCXVFDKW-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XYDQMRVDDPZFMM-UHFFFAOYSA-N [Ag+2] Chemical class [Ag+2] XYDQMRVDDPZFMM-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- ZJRXSAYFZMGQFP-UHFFFAOYSA-N barium peroxide Chemical compound [Ba+2].[O-][O-] ZJRXSAYFZMGQFP-UHFFFAOYSA-N 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 239000013626 chemical specie Substances 0.000 description 1
- XTEGARKTQYYJKE-UHFFFAOYSA-N chloric acid Chemical compound OCl(=O)=O XTEGARKTQYYJKE-UHFFFAOYSA-N 0.000 description 1
- 229940005991 chloric acid Drugs 0.000 description 1
- QBWCMBCROVPCKQ-UHFFFAOYSA-N chlorous acid Chemical compound OCl=O QBWCMBCROVPCKQ-UHFFFAOYSA-N 0.000 description 1
- 229940077239 chlorous acid Drugs 0.000 description 1
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 1
- CMMUKUYEPRGBFB-UHFFFAOYSA-L dichromic acid Chemical compound O[Cr](=O)(=O)O[Cr](O)(=O)=O CMMUKUYEPRGBFB-UHFFFAOYSA-L 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- QFWPJPIVLCBXFJ-UHFFFAOYSA-N glymidine Chemical compound N1=CC(OCCOC)=CN=C1NS(=O)(=O)C1=CC=CC=C1 QFWPJPIVLCBXFJ-UHFFFAOYSA-N 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- RKKOMEIYHHASIN-UHFFFAOYSA-N hydroperoxyboronic acid Chemical compound OOB(O)O RKKOMEIYHHASIN-UHFFFAOYSA-N 0.000 description 1
- GEOVEUCEIQCBKH-UHFFFAOYSA-N hypoiodous acid Chemical compound IO GEOVEUCEIQCBKH-UHFFFAOYSA-N 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 description 1
- JRKICGRDRMAZLK-UHFFFAOYSA-N peroxydisulfuric acid Chemical compound OS(=O)(=O)OOS(O)(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-N 0.000 description 1
- 150000004968 peroxymonosulfuric acids Chemical class 0.000 description 1
- MPNNOLHYOHFJKL-UHFFFAOYSA-N peroxyphosphoric acid Chemical compound OOP(O)(O)=O MPNNOLHYOHFJKL-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000003755 preservative agent Substances 0.000 description 1
- 230000002335 preservative effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- -1 silica Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- PFUVRDFDKPNGAV-UHFFFAOYSA-N sodium peroxide Chemical compound [Na+].[Na+].[O-][O-] PFUVRDFDKPNGAV-UHFFFAOYSA-N 0.000 description 1
- 239000011550 stock solution Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
本発明は、ＩＩＩ−Ｖ族化合物材料を含有する研磨対象物を研磨する用途で使用される研磨用組成物に関する。本発明はまた、その研磨用組成物を用いた研磨方法及び基板の製造方法に関する。 The present invention relates to a polishing composition for use in polishing a polishing object containing a III-V group compound material. The present invention also relates to a polishing method and a substrate manufacturing method using the polishing composition.
ＩＩＩ−Ｖ族化合物半導体基板を研磨する用途で従来使用されている例えば特許文献１又は特許文献２に記載のような研磨用組成物には一般に、ジクロロイソシアヌル酸ナトリウムなどの酸化剤が含まれている。この酸化剤は研磨用組成物中で容易に分解しやすく、酸化剤の分解は研磨用組成物の変色を伴う。酸化剤の分解に従って研磨用組成物によるＩＩＩ−Ｖ族化合物半導体基板の研磨速度に低下が生じるため、これらの研磨用組成物は保存安定性に難があった。 Polishing compositions conventionally used for polishing III-V compound semiconductor substrates, for example, as disclosed in Patent Document 1 or Patent Document 2, generally contain an oxidizing agent such as sodium dichloroisocyanurate. Yes. This oxidizing agent is easily decomposed in the polishing composition, and the decomposition of the oxidizing agent is accompanied by discoloration of the polishing composition. Since the polishing rate of the group III-V compound semiconductor substrate by the polishing composition decreases as the oxidizing agent decomposes, these polishing compositions have difficulty in storage stability.
また、ＩＩＩ−Ｖ族化合物材料を含有する部分とＩＩＩ−Ｖ族化合物以外の材料を含有する部分とを有する研磨対象物を研磨する際には、そのＩＩＩ−Ｖ族化合物以外の材料を含有する部分よりもＩＩＩ−Ｖ族化合物材料を含有する部分を高選択的に研磨することが必要とされることがある。それは酸化シリコン等のオキサイドロスを少なくすることで、配線層間の耐電圧を確保し、さらにその後のフォトリソグラフィ工程を行う際に、露光焦点合わせを容易にするためである。この点、特許文献１又は特許文献２に記載の研磨用組成物は、ＩＩＩ−Ｖ族化合物材料を含有する部分とＩＩＩ−Ｖ族化合物以外の材料を含有する部分とを有する研磨対象物を研磨する用途で使用したときにＩＩＩ−Ｖ族化合物材料を含有する部分に対する十分に高い研磨選択性を発揮しない。 Further, when polishing an object to be polished having a portion containing a III-V group compound material and a portion containing a material other than the III-V group compound, a material other than the III-V group compound is contained. It may be necessary to polish the portion containing the III-V compound material more selectively than the portion. This is to reduce the oxide loss of silicon oxide or the like, thereby ensuring a withstand voltage between the wiring layers and facilitating exposure focusing when performing the subsequent photolithography process. In this regard, the polishing composition described in Patent Literature 1 or Patent Literature 2 polishes a polishing object having a portion containing a III-V group compound material and a portion containing a material other than the III-V group compound. When used in such applications, it does not exhibit sufficiently high polishing selectivity for the part containing the III-V compound material.
そこで本発明の目的は、ＩＩＩ−Ｖ族化合物材料を含有する研磨対象物を研磨する用途で使用される研磨用組成物の保存安定性を向上させることにある。また、本発明の別の目的は、ＩＩＩ−Ｖ族化合物材料を含有する部分とＩＩＩ−Ｖ族化合物以外の材料を含有する部分とを有する研磨対象物を研磨する用途で使用したときにＩＩＩ−Ｖ族化合物材料を含有する部分に対する高い研磨選択性を発揮することができる研磨用組成物を提供すること、またその研磨用組成物を用いた研磨方法及び基板の製造方法を提供することにある。 Therefore, an object of the present invention is to improve the storage stability of a polishing composition used for polishing an object to be polished containing a III-V group compound material. Another object of the present invention is to use III-V when used for polishing a polishing object having a portion containing a III-V group compound material and a portion containing a material other than the III-V group compound. To provide a polishing composition capable of exhibiting high polishing selectivity with respect to a portion containing a group V compound material, and to provide a polishing method and a substrate manufacturing method using the polishing composition. .
上記の目的を達成するために、本発明の第１の態様では、ＩＩＩ−Ｖ族化合物材料を含有する研磨対象物を研磨する用途で使用される研磨用組成物であって、酸化剤と、非プロトン性極性溶媒とを含有する研磨用組成物を提供する。 In order to achieve the above object, according to a first aspect of the present invention, there is provided a polishing composition for use in polishing a polishing object containing a III-V compound material, comprising an oxidizing agent, A polishing composition containing an aprotic polar solvent is provided.
研磨用組成物中の非プロトン性極性溶媒の含有量は１０質量％以上であることが好ましい。
本発明の第２の態様では、上記第１の態様の研磨用組成物を用いて、ＩＩＩ−Ｖ族化合物材料を含有する研磨対象物を研磨する方法を提供する。
The content of the aprotic polar solvent in the polishing composition is preferably 10% by mass or more.
According to a second aspect of the present invention, there is provided a method for polishing a polishing object containing a III-V group compound material using the polishing composition of the first aspect.
本発明の第３の態様では、上記第１の態様の研磨用組成物を用いて、ＩＩＩ−Ｖ族化合物材料を含有する部分（以下、ＩＩＩ−Ｖ族化合物材料部分ともいう）とケイ素材料を含有する部分（以下、ケイ素材料部分ともいう）とを有する研磨対象物を研磨する方法を提供する。 In the third aspect of the present invention, a portion containing a III-V group compound material (hereinafter also referred to as a III-V group compound material portion) and a silicon material are used using the polishing composition of the first aspect. Provided is a method for polishing an object to be polished having a containing portion (hereinafter also referred to as a silicon material portion).
本発明の第４の態様では、上記第１の態様の研磨用組成物を用いて、ＩＩＩ−Ｖ族化合物材料部分とケイ素材料部分とを有する研磨対象物を研磨することにより、基板を製造する方法を提供する。 In the fourth aspect of the present invention, a substrate is produced by polishing a polishing object having a III-V compound material portion and a silicon material portion using the polishing composition of the first aspect. Provide a method.
本発明によれば、ＩＩＩ−Ｖ族化合物材料を含有する研磨対象物を研磨する用途で使用される研磨用組成物の保存安定性を向上させることができる。また、ＩＩＩ−Ｖ族化合物材料部分とＩＩＩ−Ｖ族化合物以外の材料を含有する部分とを有する研磨対象物を研磨する用途で使用したときにＩＩＩ−Ｖ族化合物材料部分に対する高い研磨選択性を発揮することができる研磨用組成物と、その研磨用組成物を用いた研磨方法及び基板の製造方法とが提供される。 ADVANTAGE OF THE INVENTION According to this invention, the storage stability of the polishing composition used for the use which grind | polishes the grinding | polishing target object containing a III-V group compound material can be improved. Moreover, when it uses in the use which grind | polishes the grinding | polishing target object which has a III-V group compound material part and the part containing materials other than a III-V compound, it has high polishing selectivity with respect to a III-V group compound material part. A polishing composition that can be exhibited, a polishing method using the polishing composition, and a method for manufacturing a substrate are provided.
以下、本発明の一実施形態を説明する。
本実施形態の研磨用組成物は、酸化剤を非プロトン性極性溶媒に混合して調製される。従って、研磨用組成物は、酸化剤及び非プロトン性極性溶媒を含有する。
Hereinafter, an embodiment of the present invention will be described.
The polishing composition of this embodiment is prepared by mixing an oxidizing agent with an aprotic polar solvent. Accordingly, the polishing composition contains an oxidizing agent and an aprotic polar solvent.
この研磨用組成物は、ＩＩＩ−Ｖ族化合物材料を含有する研磨対象物を研磨する用途で使用される。あるいは、ＩＩＩ−Ｖ族化合物材料部分とケイ素材料部分とを有する研磨対象物を研磨する用途、さらに言えばその研磨対象物を研磨して基板を製造する用途においてＩＩＩ−Ｖ族化合物材料部分を選択的に研磨する目的で使用される。ＩＩＩ−Ｖ族化合物材料の例としては、リン化ガリウム（ＧａＰ）、リン化インジウム（ＩｎＰ）、ヒ化ガリウム（ＧａＡｓ）、ヒ化インジウム（ＩｎＡｓ）、アンチモン化インジウム（ＩｎＳｂ）等が挙げられる。また、ケイ素材料の例としては、ポリシリコン、酸化シリコン、窒化シリコン等が挙げられる。 This polishing composition is used for polishing an object to be polished containing a III-V compound material. Alternatively, a group III-V compound material portion is selected for use in polishing a polishing object having a III-V compound material portion and a silicon material portion, and more specifically, in a use for polishing the polishing object to manufacture a substrate. It is used for the purpose of polishing. Examples of III-V group compound materials include gallium phosphide (GaP), indium phosphide (InP), gallium arsenide (GaAs), indium arsenide (InAs), indium antimonide (InSb), and the like. Examples of the silicon material include polysilicon, silicon oxide, silicon nitride, and the like.
（酸化剤）
研磨用組成物中に含まれる酸化剤の種類は特に限定されないが、０．３Ｖ以上の標準電極電位を有していることが好ましい。０．３Ｖ以上の標準電極電位を有する酸化剤を使用した場合には、０．３Ｖ未満の標準電極電位を有する酸化剤を使用した場合に比べて、研磨用組成物によるＩＩＩ−Ｖ族化合物材料部分の研磨速度が向上するという有利がある。０．３Ｖ以上の標準電極電位を有する酸化剤の具体例としては、過酸化水素、過酸化ナトリウム、過酸化バリウム、有機酸化剤、オゾン水、銀（ Ｉ Ｉ ） 塩、鉄（ Ｉ Ｉ Ｉ ） 塩、並びに過マンガン酸、クロム酸、重クロム酸、ペルオキソ二硫酸、ペルオキソリン酸、ペルオキソ硫酸、ペルオキソホウ酸、過ギ酸、過酢酸、過安息香酸、過フタル酸、次亜塩素酸、次亜臭素酸、次亜ヨウ素酸、塩素酸、亜塩素酸、過塩素酸、臭素酸、ヨウ素酸、過ヨウ素酸、硫酸、過硫酸、クエン酸、ジクロロイソシアヌル酸及びそれらの塩等が挙げられる。これらの中でも、研磨用組成物によるＩＩＩ−Ｖ族化合物材料部分の研磨速度が大きく向上することから、過酸化水素、過硫酸アンモニウム、及びジクロロイソシアヌル酸ナトリウムが好ましい。
(Oxidant)
Although the kind of oxidizing agent contained in polishing composition is not specifically limited, It is preferable to have a standard electrode potential of 0.3V or more. When an oxidizing agent having a standard electrode potential of 0.3 V or higher is used, the III-V group compound material by the polishing composition is used compared to the case of using an oxidizing agent having a standard electrode potential of less than 0.3 V. There is an advantage that the polishing rate of the portion is improved. Specific examples of the oxidizing agent having a standard electrode potential of 0.3 V or more include hydrogen peroxide, sodium peroxide, barium peroxide, organic oxidizing agent, ozone water, silver (I I) salt, iron (I I I) Permanganate, chromic acid, dichromic acid, peroxodisulfuric acid, peroxophosphoric acid, peroxosulfuric acid, peroxoboric acid, performic acid, peracetic acid, perbenzoic acid, perphthalic acid, hypochlorous acid, hypochlorous acid Examples include bromic acid, hypoiodous acid, chloric acid, chlorous acid, perchloric acid, bromic acid, iodic acid, periodic acid, sulfuric acid, persulfuric acid, citric acid, dichloroisocyanuric acid, and salts thereof. Among these, hydrogen peroxide, ammonium persulfate, and sodium dichloroisocyanurate are preferable because the polishing rate of the group III-V compound material portion by the polishing composition is greatly improved.
なお、標準電極電位とは、酸化反応に関与するすべての化学種が標準状態にあるときに次式で表される。
Ｅ０＝−△Ｇ０／ｎＦ＝（ＲＴ／ｎＦ）ｌｎＫ
ここで、Ｅ０は標準電極電位、△Ｇ０は酸化反応の標準ギブスエネルギー変化、Ｋはその平行定数、Ｆはファラデー定数、Ｔは絶対温度、ｎは酸化反応に関与する電子数である。従って、標準電極電位は温度により変動するので、本明細書中においては２５℃における標準電極電位を採用している。なお、水溶液系の標準電極電位は、例えば改訂４版化学便覧（基礎編）ＩＩ、ｐｐ４６４−４６８（日本化学会編）等に記載されている。
The standard electrode potential is expressed by the following formula when all chemical species involved in the oxidation reaction are in the standard state.
E0 = −ΔG0 / nF = (RT / nF) lnK
Here, E0 is the standard electrode potential, ΔG0 is the standard Gibbs energy change of the oxidation reaction, K is its parallel constant, F is the Faraday constant, T is the absolute temperature, and n is the number of electrons involved in the oxidation reaction. Accordingly, since the standard electrode potential varies depending on the temperature, the standard electrode potential at 25 ° C. is adopted in this specification. The standard electrode potential of the aqueous solution system is described in, for example, the revised 4th edition, Chemical Handbook (Basic Edition) II, pp 464-468 (Edited by Chemical Society of Japan).
研磨用組成物中の酸化剤の含有量は０．０１ｍｏｌ／Ｌ以上であることが好ましく、より好ましくは０．１ｍｏｌ／Ｌ以上である。酸化剤の含有量が多くなるにつれて、研磨用組成物によるＩＩＩ−Ｖ族化合物材料部分の研磨速度が向上する。 The content of the oxidizing agent in the polishing composition is preferably 0.01 mol / L or more, more preferably 0.1 mol / L or more. As the content of the oxidizing agent increases, the polishing rate of the III-V group compound material portion by the polishing composition is improved.
研磨用組成物中の酸化剤の含有量はまた、１００ｍｏｌ／Ｌ以下であることが好ましく、より好ましくは５０ｍｏｌ／Ｌ以下である。酸化剤の含有量が少なくなるにつれて、研磨用組成物の材料コストを抑えることができるのに加え、研磨使用後の研磨用組成物の処理、すなわち廃液処理の負荷を軽減することができる。 The content of the oxidizing agent in the polishing composition is also preferably 100 mol / L or less, more preferably 50 mol / L or less. As the content of the oxidizing agent decreases, the material cost of the polishing composition can be reduced, and the load on the processing of the polishing composition after polishing, that is, the waste liquid treatment can be reduced.
（非プロトン性極性溶媒）
研磨用組成物中に含まれる非プロトン性極性溶媒の具体例としては、アセトニトリル、アセトン、テトラヒドロフラン、Ｎ，Ｎ−ジメチルホルムアミド、及びジメチルスルホキシドが挙げられる。
(Aprotic polar solvent)
Specific examples of the aprotic polar solvent contained in the polishing composition include acetonitrile, acetone, tetrahydrofuran, N, N-dimethylformamide, and dimethyl sulfoxide.
本実施形態によれば以下の作用効果が得られる。
・ 本実施形態の研磨用組成物では、研磨用組成物中の酸化剤の分解を防いで研磨用組成物の保存安定性を向上させるために非プロトン性極性溶媒が使用されている。そのため、この研磨用組成物は、ＩＩＩ−Ｖ族化合物材料を含有する研磨対象物を研磨する用途で好適に用いられる。
According to this embodiment, the following effects can be obtained.
-In the polishing composition of this embodiment, the aprotic polar solvent is used in order to prevent decomposition | disassembly of the oxidizing agent in polishing composition and to improve the storage stability of polishing composition. Therefore, this polishing composition is suitably used in applications for polishing a polishing object containing a III-V group compound material.
・ ＩＩＩ−Ｖ族化合物材料部分とケイ素材料部分とを有する研磨対象物を研磨する用途で本実施形態の研磨用組成物を使用した場合には、研磨用組成物中の非プロトン性極性溶媒がケイ素材料部分の加水分解を抑制する働きをするために、ＩＩＩ−Ｖ族化合物材料部分に対する研磨用組成物の研磨選択性が向上するという有利がある。 When the polishing composition of the present embodiment is used for polishing a polishing object having a III-V compound material portion and a silicon material portion, the aprotic polar solvent in the polishing composition is Since it functions to suppress hydrolysis of the silicon material portion, there is an advantage that the polishing selectivity of the polishing composition with respect to the III-V group compound material portion is improved.
前記実施形態は次のように変更されてもよい。
・ 前記実施形態の研磨用組成物は、二種類以上の酸化剤を含有してもよい。
・ 前記実施形態の研磨用組成物は、二種類以上の非プロトン性極性溶媒を含有してもよい。
The embodiment may be modified as follows.
-The polishing composition of the said embodiment may contain a 2 or more types of oxidizing agent.
-The polishing composition of the said embodiment may contain a 2 or more types of aprotic polar solvent.
・ 前記実施形態の研磨用組成物は、水などのプロトン性極性溶媒をさらに含有してもよい。この場合、研磨用組成物中の非プロトン性極性溶媒の含有量は１０質量％以上であることが好ましい。 -The polishing composition of the said embodiment may further contain protic polar solvents, such as water. In this case, the content of the aprotic polar solvent in the polishing composition is preferably 10% by mass or more.
・ 前記実施形態の研磨用組成物は砥粒をさらに含有してもよい。砥粒は、無機粒子及び有機粒子のいずれであってもよい。無機粒子の具体例としては、シリカ、アルミナ、セリア、チタニアなどの金属酸化物からなる粒子が挙げられる。有機粒子の具体例としては、ポリメタクリル酸メチル粒子が挙げられる。 -The polishing composition of the said embodiment may further contain an abrasive grain. The abrasive grains may be either inorganic particles or organic particles. Specific examples of the inorganic particles include particles made of a metal oxide such as silica, alumina, ceria, titania and the like. Specific examples of the organic particles include polymethyl methacrylate particles.
・ 前記実施形態の研磨用組成物は、防腐剤のような公知の添加剤を必要に応じてさらに含有してもよい。
・ 前記実施形態の研磨用組成物は一液型であってもよいし、二液型をはじめとする多液型であってもよい。
-Polishing composition of the said embodiment may further contain well-known additives like a preservative as needed.
The polishing composition of the above embodiment may be a one-component type or a multi-component type including a two-component type.
・ 前記実施形態の研磨用組成物は、研磨用組成物の原液を水で希釈することにより調製されてもよい。
次に、本発明の実施例及び比較例を説明する。
-The polishing composition of the said embodiment may be prepared by diluting the undiluted | stock solution of polishing composition with water.
Next, examples and comparative examples of the present invention will be described.
酸化剤を非プロトン性極性溶媒と混合することにより、実施例１〜７の研磨用組成物を調製した。また、酸化剤をプロトン性極性溶媒と混合することにより、比較例１，２の研磨用組成物を調製した。各研磨用組成物中の成分の詳細を表１に示す。なお、表１中、“ＡＰＳ”は過硫酸アンモニウムを表し、“Ｈ２Ｏ２”は過酸化水素を表す。 The polishing composition of Examples 1-7 was prepared by mixing an oxidizing agent with an aprotic polar solvent. Moreover, the polishing composition of Comparative Examples 1 and 2 was prepared by mixing an oxidizing agent with a protic polar solvent. Details of the components in each polishing composition are shown in Table 1. In Table 1, “APS” represents ammonium persulfate, and “H 2 O 2 ” represents hydrogen peroxide.
表１の“保存安定性”欄には、実施例１〜７及び比較例１，２の研磨用組成物の保存安定性を評価した結果を示す。具体的には、各研磨用組成物を常温で７日間保存したときに研磨用組成物に変色が認められた場合には×、変色が認められなかった場合には○と評価した。 In the "Storage Stability" column of Table 1, the results of evaluating the storage stability of the polishing compositions of Examples 1 to 7 and Comparative Examples 1 and 2 are shown. Specifically, when each polishing composition was stored at room temperature for 7 days, the polishing composition was evaluated as x when discoloration was observed, and when the discoloration was not observed, it was evaluated as ◯.
Claims (5)
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| JP2011258344A JP2013115153A (en) | 2011-11-25 | 2011-11-25 | Polishing composition |
| PCT/JP2012/080220 WO2013077370A1 (en) | 2011-11-25 | 2012-11-21 | Polishing composition |
| TW101143735A TW201339290A (en) | 2011-11-25 | 2012-11-22 | Grinding composition |
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|---|---|---|---|
| JP2011258344A JP2013115153A (en) | 2011-11-25 | 2011-11-25 | Polishing composition |
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