JP2013197329A - Manufacturing apparatus of semiconductor device and manufacturing method of semiconductor device - Google Patents

Abstract

A raw material gas remaining in a gas nozzle, which causes generation of particles accumulated in a gas nozzle of a semiconductor manufacturing apparatus, is reduced.
As shown in FIG. 1, a gas nozzle, a first gas jet port for flowing gas toward a side wall of the gas nozzle, a direction perpendicular to the gas nozzle and toward the semiconductor wafer, and a first gas jet port, Separately, the gas nozzle includes a second gas jet port that is disposed on the terminal side of the first gas jet port and flows gas in a direction different from that of the semiconductor wafer.
[Selection] Figure 1

Description

  The present invention relates to a semiconductor device manufacturing apparatus and a semiconductor device manufacturing method.

  When a thin film is grown on the surface of a semiconductor wafer, a source gas is discharged from a gas outlet provided on a side wall of a gas nozzle provided in a semiconductor device manufacturing apparatus. At this time, most of the source gas supplied to the gas nozzle is discharged into the processing chamber in which the semiconductor wafer is installed. On the other hand, the raw material gas that has not been released into the processing chamber remains at the end of the gas nozzle. One method for removing the raw material gas remaining in the gas nozzle is to use an inert gas for replacement.

  Patent Document 1 discloses a substrate processing apparatus in which an exhaust port for exhausting a source gas supplied from a gas nozzle is provided below an open end of an inner tube. By using this substrate processing apparatus, both the source gas after passing through the space between the inner tube and the outer tube and the source gas from the open end of the inner tube can be exhausted. That is, a substrate processing apparatus that can improve the replacement efficiency of the remaining source gas is disclosed.

JP 2009-4642 A

  When a thin film is formed on the surface of the semiconductor wafer, the raw material gas that has not been released from the gas outlet remains at the end of the gas nozzle in the semiconductor manufacturing apparatus. The source gas remaining in such a gas nozzle causes a gas phase reaction with a gas such as oxygen supplied separately from the source gas. The product obtained by this gas phase reaction causes particles accumulated in the gas nozzle. In addition, the accumulated particles cause a decrease in yield when manufacturing the semiconductor device.

According to the present invention, a gas nozzle;
A first gas jet port for flowing a gas in a direction perpendicular to the gas nozzle and toward the semiconductor wafer on the side wall of the gas nozzle;
Separately from the first gas jet port, the gas nozzle is arranged on the terminal side of the first gas jet port, and a second gas jet port for flowing gas in a direction different from the semiconductor wafer;
An apparatus for manufacturing a semiconductor device is provided.

Furthermore, according to the present invention, a film forming step of growing a thin film on the surface of the semiconductor wafer by a first gas outlet provided in the gas nozzle of the semiconductor manufacturing apparatus,
Have
In the semiconductor manufacturing apparatus, apart from the first gas outlet, the gas nozzle is provided with a second gas outlet that is arranged on the terminal side of the first gas outlet,
In the film forming step, a semiconductor device manufacturing method is provided that includes a discharging step of discharging the gas remaining in the gas nozzle from the second gas jetting port in a direction different from that of the semiconductor wafer.

  According to the present invention, apart from the first gas jetting port for forming a film on the surface of the semiconductor wafer, the second gas jetting port is provided on the terminal side of the gas nozzle from the first gas jetting port. Thereby, the raw material gas remaining in the gas nozzle is pushed out by the inert gas supplied from the second gas ejection port.

  According to the present invention, the source gas remaining in the gas nozzle without being discharged from the first gas jet port to the semiconductor wafer is supplied to the second gas jet provided on the terminal side from the first gas jet port. Can be discharged from the outlet. Thereby, generation | occurrence | production of the particle | grains accumulate | stored in a gas nozzle can be suppressed. That is, it is possible to suppress a decrease in yield when manufacturing a semiconductor device.

It is a figure for demonstrating the gas nozzle front-end | tip part provided in the semiconductor manufacturing apparatus by this embodiment. It is a longitudinal cross-sectional view of the semiconductor device manufacturing apparatus according to the present embodiment. It is a cross-sectional view of the semiconductor device manufacturing apparatus according to the present embodiment. It is an example for demonstrating the gas supply to the semiconductor manufacturing apparatus in the semiconductor device manufacture by this embodiment.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In all the drawings, the same reference numerals are given to the same components, and the description will be omitted as appropriate.

FIG. 1 is a view for explaining a gas nozzle tip provided in the semiconductor manufacturing apparatus according to the present embodiment.
As shown in FIG. 1, a gas nozzle 10, a first gas outlet 1 that flows gas toward a side wall of the gas nozzle 10 in a direction perpendicular to the gas nozzle 10 and toward the semiconductor wafer 100, and a first gas outlet 1, the gas nozzle 10 is provided with a second gas jet port 2 that is disposed on the terminal side of the first gas jet port 1 and flows gas in a direction different from that of the semiconductor wafer 100.

  A plurality of first gas ejection ports 1 are preferably provided in a direction perpendicular to the gas nozzle 10, and at least one or more second gas ejection ports 2 are preferably provided. The diameter of the second gas outlet 2 is the same as or smaller than the diameter of the first gas outlet 1. Thereby, compared with the 2nd gas ejection port 2, it becomes easy to discharge | release gas from the 1st gas ejection port 1. FIG. For this reason, it becomes a structure which does not raise | generate the retention of the terminal part of the gas nozzle 10 easily. That is, a structure in which gas replacement easily occurs. Furthermore, as shown in FIG. 1, it is preferable that the end of the gas nozzle 10 has a dome shape, and the second gas jet port 2 is provided at the apex thereof. This is because if the end of the gas nozzle 10 is a dome shape, the raw material gas remaining in the gas nozzle 10 tends to gather at the tip. For this reason, by providing the second gas ejection port at the tip of the gas nozzle 10, the remaining source gas is easily released to the outside. Note that the shape of the end of the gas nozzle 10 and the position of the second gas outlet 2 are not limited to the example shown in the figure.

FIG. 2 is a longitudinal sectional view of the semiconductor device manufacturing apparatus according to the present embodiment, and FIG. 3 is a transverse sectional view.
As shown in FIG. 2, the semiconductor device manufacturing apparatus 200 includes an outer tube 20 as a process tube. Further, the cylindrical hollow portion of the outer tube 20 is provided with a processing chamber 35 in which a plurality of semiconductor wafers 100 can be accommodated and processed. A cylindrical inner tube 30 that accommodates the boat 45 is disposed concentrically in the processing chamber 35. The boat 45 is connected to a boat (semiconductor wafer holding column) 80 provided with a holding groove 70 for the semiconductor wafer 100.

  The outer tube 20 is formed in a cylindrical shape having one end opened and the other end closed. Furthermore, the outer tube 20 is vertically arranged so that the center line is vertical and is fixedly supported. The outer tube 20 is placed on the manifold 93 with a seal ring 92 interposed therebetween. The outer tube 20 is horizontally supported by the casing by mounting the manifold 93 on the casing.

  The manifold 93 is formed in a cylindrical shape with both upper and lower ends opened by stainless steel or the like, and a furnace port 94 is formed at the lower end of the manifold 93. One end of an exhaust pipe 84 that evacuates the processing chamber 35 is connected to a part of the side wall of the manifold 93. The other end of the exhaust pipe 84 is connected to the vacuum pump 108 via an APC valve (main valve) 110 (FIG. 3).

  The APC valve 110 performs evacuation and evacuation stop of the processing chamber 35 by opening and closing the valve body. Furthermore, the pressure in the processing chamber 35 can be controlled by adjusting the exhaust amount by adjusting the opening of the valve body.

The inner tube 30 is made of quartz and is formed in a cylindrical shape with the upper end closed and the lower end opened. An inner tube receiver 31 protrudes horizontally and radially inwardly at the lower end portion of the inner peripheral surface of the manifold 93, and the inner tube protrusion 32 extends in the circumferential direction on the lower end opening edge of the inner tube 30. Are arranged at equal intervals and project horizontally and radially outward.
The inner tube 30 is supported by the manifold 93 by placing the inner tube protrusion 32 on the inner tube receiver 31. Further, a gap 55 is formed between the outer wall surface of the inner tube 30 and the inner wall surface of the outer tube 20 in the vertical direction. The lower end of the gap 55 is closed and continues to the exhaust pipe 84 of the manifold 93.

  A gas nozzle accommodating portion 50 that extends vertically is formed radially outward in a part of the cylindrical wall of the inner tube 30, and a plurality of exhaust holes 60 are perpendicular to the position facing the gas nozzle accommodating portion 50. Has been placed and opened. Note that the gas nozzle 10 is laid vertically in the gas nozzle housing 50. In the gas nozzle 10, the first gas outlets 1 are arranged at equal intervals in the vertical direction, and are opened radially inward. Further, the gas outlet 1 and the exhaust hole 60 arranged in the same stage face each other.

  One end of a gas supply pipe 86 is connected to the lower end of the gas nozzle 10, and the gas supply pipe 86 passes through the side wall of the manifold 93 and protrudes to the outside. The gas nozzle 10 is vertically supported by being supported by the gas supply pipe 86.

  The seal cap 88 is formed in a disc shape having an outer diameter larger than the inner diameter of the furnace port 94. The seal cap 88 is configured to hermetically seal the furnace port 94 with a seal ring 92.

  A rotational shaft 89 that is rotationally driven by the rotational drive device 90 is inserted through the center line of the seal cap 88. The rotary shaft 89 is configured to move up and down together with the seal cap 88. A support base 91 is vertically installed at the upper end of the rotating shaft 89, and a boat 80 is vertically supported as a holder for the semiconductor wafer 100 on the support base 91. The boat 80 includes a pair of end plates 45 and 82 on the upper and lower sides, and holding pillars 80 for a plurality of semiconductor wafers 100 arranged between the end plates 45 and 82 and arranged vertically.

  Further, a plurality of holding grooves 70 are arranged in the plurality of holding pillars 80 at equal intervals in the longitudinal direction, and are recessed so as to open opposite to each other in the same plane. For this reason, when the outer peripheral edge of the semiconductor wafer 100 is inserted between the multiple holding grooves 70 of the holding pillar 80 of each semiconductor wafer 100, the plurality of semiconductor wafers 100 are horizontally aligned with the boat 80 and aligned with each other. Aligned and held in the aligned state.

  As shown in FIG. 3, the other end of the gas supply pipe 86 is connected to an ozonizer 126 serving as a gas supply source for supplying a predetermined gas type in the ALD (Atomic Layer Deposition) method. An oxygen gas supply source 127 that supplies oxygen gas, which is a raw material gas of ozone gas, to the ozonizer 126 is connected to the upstream side of the ozonizer 126.

  Further, an MFC (mass flow controller) 125 and a valve 132 are provided in the gas supply pipe 86 in this order from the ozonizer 126 side. Further, one end of an inert gas supply pipe 170 having the other end connected to the inert gas supply source 140 is connected to the downstream side of the valve 132 of the gas supply pipe 86. A valve 130 and an MFC 124 are interposed in this.

  As shown in FIG. 3, in the semiconductor device manufacturing apparatus 200, the gas nozzle 11 is arranged in parallel with the vicinity of the gas nozzle 10, and the lower end of the gas nozzle 11 is connected to one end of the other gas supply pipe 120. At this time, the gas supply pipe 120 penetrates the side wall of the manifold 93 and protrudes to the outside. The gas nozzles 10 and 11 are vertically supported by being supported by the gas supply pipe 86.

  The other end of the gas supply pipe 120 is connected to a gas supply source 160 that supplies a predetermined gas type in the ALD method via an MFC 122 and a valve 128. The gas supply pipe 120 is provided with a heater 115, and the heater 115 is configured to keep the gas supply pipe 120 at 50 to 60 ° C.

  As in the case of the gas supply pipe 86, one end of an inert gas supply pipe 150 whose other end is connected to the inert gas supply source 140 is connected to the downstream side of the valve 128 connected to the gas supply pipe 120. Yes. Further, a valve 134 and an MFC 123 are interposed in the middle of the inert gas supply pipe 150.

  The semiconductor device manufacturing apparatus 200 includes a controller 105. The controller 105 is connected to and controls the vacuum pump 108, the APC valve 110, the MFCs 125, 122, 124, 123, the valves 132, 130, 128, 134, and the like. The controller 105 is constructed by a personal computer or the like. Thus, when a thin film is formed on the surface of the semiconductor wafer 100, each manufacturing process can be mechanically controlled.

  Further, the semiconductor device manufacturing apparatus 200 includes a heater unit. The heater unit is provided concentrically so as to surround the outer tube 20 from the outside of the outer tube 20. The heater unit is configured to heat the processing chamber 35 uniformly or with a predetermined temperature distribution throughout.

  Next, a semiconductor device manufacturing method using the semiconductor device manufacturing apparatus 200 will be described.

  The semiconductor device manufacturing method according to the present embodiment includes a film forming step of growing a thin film on the surface of the semiconductor wafer 100 by the first gas outlet 1 provided in the gas nozzle of the semiconductor manufacturing device. In addition to the first gas jet port 1, a second gas jet port 2 disposed on the end side of the gas nozzle 10 from the first gas jet port 1 is provided in the film 200. 2 includes a discharge step of discharging the gas remaining in the gas nozzle 10 from the second gas ejection port 2 in a direction different from that of the semiconductor wafer 100.

FIG. 4 is an example for explaining the gas supply to the semiconductor manufacturing apparatus in the semiconductor device manufacturing according to the present embodiment.
As shown in FIG. 4, when forming a thin film on the surface of the semiconductor wafer 100 using the ALD method, the first step, the second step, the third step, and the fourth step are sequentially performed.

In the first step, 3DMAS (trisdimethylaminosilane) gas, which is a raw material gas, is supplied. The valve 128 provided in the gas supply pipe 120 and the APC valve 110 provided in the exhaust pipe 84 are opened. The flow rate of the 3DMAS gas vaporized by the gas supply source 160 is controlled by the MFC 122 provided in the gas supply pipe 120. Next, 3DMAS gas is supplied to the gas nozzle 11 through the valve 128 and the gas supply pipe 120.
At the same time, when the valve 134 provided in the inert gas supply pipe 150 is opened, the inert gas flows from the inert gas supply source 140. The flow rate of the inert gas is controlled by the MFC 123, and the gas is supplied from the inert gas supply pipe 150 to the gas nozzle 11 through the gas supply pipe 120 through the valve 134. The 3DMAS gas and the inert gas supplied to the gas nozzle 11 become a mixed gas and are discharged into the inner tube 30 from the first gas outlet 1.

  The 3DMAS gas discharged from the first gas outlet 1 flows horizontally through the gaps between the semiconductor wafers 100 facing each other vertically and flows into the gaps 55 from the respective exhaust holes 60 facing each other. The 3DMAS gas flowing into the gap 55 is exhausted from an exhaust pipe 84 provided below the gap 55.

Note that when the 3DMAS gas is flowed, the opening degree of the APC valve 110 of the exhaust pipe 84 is appropriately adjusted, so that the pressure in the processing chamber 35 is maintained at a predetermined pressure. At this time, the gas flowing in the processing chamber 35 is 3DMAS gas and inert gas. The 3DMAS gas does not cause a gas phase reaction and adheres to the base film on the semiconductor wafer 100.
At the same time, when the valve 130 connected to the gas supply pipe 86 is opened and the flow rate is controlled by the MFC 124 provided in the inert gas supply pipe 170 and the inert gas is flowed, the 3DMAS gas supplies ozone gas. It is possible to prevent the gas supply pipe 86 from going around.

  In the second step, the valve 128 of the gas supply pipe 120 is closed, and the supply of 3DMAS gas is stopped. Then, the APC valve 110 of the exhaust pipe 84 is kept open. As a result, when the processing chamber 35 is evacuated to 20 Pa or less by the vacuum pump 108, the 3DMAS gas remaining in the gas nozzle 10 is removed through the second gas ejection port 2.

  In the third step, ozone gas is flowed. That is, the valve 132 provided in the gas supply pipe 86 is opened, and oxygen gas is supplied from the oxygen gas supply source 127 to the ozonizer 126. Ozone gas is generated by the ozonizer 126 from the supplied oxygen gas. Next to the ozone gas, the ozone gas whose flow rate is adjusted by the MFC 125 is supplied to the gas nozzle 10 via the gas supply pipe 86. As a result, ozone gas is discharged into the inner tube 30 from the first gas outlet 1 provided in the gas nozzle 10.

  The ozone gas released from the first gas outlet 1 flows horizontally through the gaps between the semiconductor wafers 100 that are vertically opposed to each other, and flows into the gaps 55 from the respective exhaust holes 60 that are opposed to each other. The 3DMAS gas flowing into the gap 55 is exhausted from an exhaust pipe 84 provided below the gap 55.

  At the same time, the flow rate of the inert gas is adjusted by the MFC 123 of the inert gas supply pipe 150 connected in the middle of the gas supply pipe 120, and flows along with the opening of the valve 134. This inert gas can prevent the ozone gas from entering the gas supply pipe 120 for flowing the 3DMAS gas. At this time, the gas staying in the processing chamber 35 is ozone gas and inert gas, and there is no 3DMAS gas in the processing chamber 35. Therefore, ozone gas does not cause a gas phase reaction. For this reason, the ozone gas reacts only with 3DMAS attached to the base film on the semiconductor wafer 100, and a silicon oxide film is formed on the semiconductor wafer 100.

  In the fourth step, the valve 132 of the gas supply pipe 86 is closed, and the supply of ozone gas is stopped. Then, the APC valve 110 of the exhaust pipe 84 is kept open, and the gas staying in the processing chamber 35 exhausts the processing chamber 35 to 20 Pa or less by the vacuum pump 108. Thereby, the ozone gas remaining in the gas nozzle 10 passes through the second gas ejection port and is excluded from the processing chamber 35.

  The above four steps are set as one cycle, and a silicon oxide film having a predetermined thickness can be formed on the surface of the semiconductor wafer 100 by repeating this cycle a plurality of times.

  The second and fourth steps described above correspond to the release process in the present embodiment.

  In the release step, the source gas that has not been released from the first gas jet port 1 toward the semiconductor wafer 100 is supplied with an inert gas before causing a gas-phase reaction with oxygen gas. From the gas outlet. Note that a part of the source gas staying in the gas nozzle 10 stays before supplying the inert gas.

  Specifically, the releasing step is a step provided to prevent the raw material gas staying in the gas nozzle 10 from causing a reaction with a gas such as oxygen gas newly supplied into the gas nozzle 10. The raw material gas staying in the gas nozzle 10 is discharged from the second gas outlet 2 to the outside of the gas nozzle 10 so as to be pushed out by the newly supplied gas. In order to prevent the released source gas from being stacked on the surface of the semiconductor wafer 100, the second gas ejection port 2 is provided in a direction different from that of the semiconductor wafer 100.

  Next, the effect by this embodiment is demonstrated.

  Of the source gas supplied to the gas nozzle 10, the source gas remaining in the gas nozzle 10 without being discharged from the first gas outlet 1 toward the semiconductor wafer 100 undergoes a gas phase reaction with oxygen. It may cause. When the source gas causes a gas phase reaction with oxygen, particles accumulate in the gas nozzle 10. However, when the semiconductor device manufacturing apparatus 200 according to the present embodiment is used, the source gas remaining in the gas nozzle 10 is discharged from the second gas outlet 2 so as to be pushed out by the gas newly supplied to the gas nozzle 10. , Discharged outside the gas nozzle. Thereby, generation | occurrence | production of the particle | grains accumulate | stored in a gas nozzle can be suppressed. That is, it is possible to suppress a decrease in yield when manufacturing a semiconductor device.

  As mentioned above, although embodiment of this invention was described with reference to drawings, these are the illustrations of this invention, Various structures other than the above are also employable.

DESCRIPTION OF SYMBOLS 1 1st gas ejection port 2 2nd gas ejection port 10 Gas nozzle 11 Gas nozzle 20 Outer tube 30 Inner tube 31 Inner tube receiver 32 Inner tube projection part 35 Processing chamber 40 Top plate 45 Boat (semiconductor wafer holder)
50 Gas Nozzle Housing 55 Gap 60 Exhaust Hole 70 Semiconductor Wafer Holding Groove 80 Boat (Semiconductor Wafer Holding Pillar)
82 Bottom plate 84 Exhaust pipe 86 Gas supply pipe 88 Seal cap 89 Rotating shaft 90 Rotating shaft driving device 91 Support base 92 Seal ring 93 Manifold 94 Furnace 100 Semiconductor wafer 105 Controller 108 Vacuum pump 110 APC valve 115 Heater 120 Gas supply pipe 122 Mass flow Controller (MFC)
123 Mass Flow Controller (MFC)
124 Mass Flow Controller (MFC)
125 Mass Flow Controller (MFC)
126 Ozonizer 127 Oxygen gas supply source 128 Valve 130 Valve 132 Valve 134 Valve 140 Inert gas supply source 150 Inert gas supply source 160 Gas supply source 170 Inert gas supply pipe 200 Semiconductor device manufacturing apparatus

Claims (6)

A gas nozzle;
A first gas jet port for flowing a gas in a direction perpendicular to the gas nozzle and toward the semiconductor wafer on a side wall of the gas nozzle;
Separately from the first gas jet port, the gas nozzle is arranged on the terminal side of the first gas jet port, and a second gas jet port for flowing gas in a direction different from that of the semiconductor wafer;
A semiconductor device manufacturing apparatus comprising:   The semiconductor device manufacturing apparatus according to claim 1, wherein a plurality of the first gas ejection ports are provided in a direction perpendicular to the gas nozzle.   The semiconductor device manufacturing apparatus according to claim 1, wherein at least one or more of the second gas ejection ports are provided.   4. The semiconductor device manufacturing apparatus according to claim 1, wherein a diameter of the second gas ejection port is the same as or smaller than a diameter of the first gas ejection port. 5.   5. The apparatus for manufacturing a semiconductor device according to claim 1, wherein an end of the gas nozzle has a dome shape, and the second gas ejection port is provided at an apex thereof. 6. A film forming step of growing a thin film on the surface of the semiconductor wafer by a first gas outlet provided in a gas nozzle of a semiconductor manufacturing apparatus;
In addition to the first gas jet port, the semiconductor manufacturing apparatus is provided with a second gas jet port disposed on the terminal side of the first gas jet port in the gas nozzle,
A method of manufacturing a semiconductor device, comprising: a discharge step of discharging the gas remaining in the gas nozzle from the second gas outlet in a direction different from that of the semiconductor wafer in the film forming step.

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