JP2013191893A - Method of manufacturing laminate semiconductor device - Google Patents

Abstract

The present invention provides a method for manufacturing a laminated semiconductor device capable of managing the production of a laminated semiconductor device using an identification mark after any joining step.
In a manufacturing method of a stacked semiconductor device in which a plurality of semiconductor substrates (120, 150) are stacked and bonded, a bonding step of sequentially bonding the plurality of semiconductor substrates (120, 150), and the plurality of semiconductor substrates (120, 150). An index is arranged on the plurality of semiconductor substrates 120 and 150 prior to the bonding step such that any one of the barcodes 124 and 154 is exposed after any bonding step. An arrangement stage.
[Selection] Figure 4

Description

  The present invention relates to a method for manufacturing a stacked semiconductor device in which a plurality of semiconductor substrates are stacked and bonded.

2. Description of the Related Art A stacked semiconductor device in which a plurality of semiconductor chips are stacked and bonded for the purpose of improving the performance of the semiconductor device without increasing the area is known. In the manufacturing process of the laminated semiconductor device, an identification index such as a barcode is formed on the semiconductor wafer (see, for example, Patent Document 1).
JP 2007-273882 A

  Here, in the manufacturing process, when the identification index is hidden in the layer, manufacturing management of the stacked semiconductor device using the identification index cannot be performed. The same applies to the case where the identification index is cut off when the semiconductor wafer is thinned.

  In order to solve the above problems, in a first aspect of the present invention, in a method for manufacturing a stacked semiconductor device in which a plurality of semiconductor substrates are stacked and bonded, a bonding step of sequentially bonding the plurality of semiconductor substrates; An identification index for identifying the plurality of semiconductor substrates, an index arrangement stage arranged on the plurality of semiconductor substrates prior to the bonding stage, so that any of the identification indices is exposed after any bonding stage; A method for manufacturing a stacked semiconductor device is provided.

  It should be noted that the above summary of the invention does not enumerate all the necessary features of the present invention. In addition, a sub-combination of these feature groups can also be an invention.

  Hereinafter, the present invention will be described through embodiments of the invention, but the following embodiments do not limit the invention according to the claims. In addition, not all the combinations of features described in the embodiments are essential for the solving means of the invention.

  FIG. 1 shows a cross-sectional view of the substrate bonding apparatus 200. The substrate bonding apparatus 200 manufactures a three-dimensional laminated semiconductor substrate by pressing and heating the semiconductor substrates 120, 150 on which a plurality of semiconductor elements are formed, and bonding them. Each of the semiconductor substrates 120 and 150 is composed of a known wafer in the illustrated example. The substrate bonding apparatus 200 includes a pressing unit 220, a pressure stage 230, a pressure receiving stage 240, and a pressure detection unit 250 that are disposed inside the frame body 210.

  The frame body 210 includes a top plate 212 and a bottom plate 216 that are parallel and horizontal to each other, and a plurality of columns 214 that couple the top plate 212 and the bottom plate 216. The top plate 212, the support column 214, and the bottom plate 216 have such rigidity that no deformation occurs when a reaction force of pressure applied to the semiconductor substrates 120 and 150 is applied.

  On the inner side of the frame body 210, the pressing portion 220 is disposed on the bottom plate 216. The pressing unit 220 includes a cylinder 222 that is fixed to the upper surface of the bottom plate 216 and a piston 224 that is disposed inside the cylinder 222. The piston 224 is driven by a fluid circuit (not shown), a cam, a train wheel, and the like, and moves up and down in a direction perpendicular to the bottom plate 216 indicated by an arrow Z in the drawing.

  A pressure stage 230 is mounted on the upper end of the piston 224. The pressure stage 230 includes a horizontal plate-like support portion 232 coupled to the upper end of the piston 224 and a plate-like first substrate holding portion 234 parallel to the support portion 232.

  The first substrate holding part 234 is supported from the support part 232 via a plurality of actuators 235. In addition to the pair of actuators 235 shown in the figure, the actuator 235 is also arranged forward and backward with respect to the paper surface. Each of these actuators 235 can be operated independently of each other. With such a structure, the inclination of the first substrate holding part 234 can be arbitrarily changed by appropriately operating the actuator 235. The first substrate holding unit 234 includes a heater 236 and is heated by the heater 236.

  Further, the semiconductor substrate 150 is electrostatically attracted to the wafer holder 350, and the first substrate holding unit 234 attracts the wafer holder 350 to the upper surface by vacuum suction or the like. As a result, the semiconductor substrate 150 swings together with the wafer holder 350 and the first substrate holding part 234, while being prevented from moving or dropping from the first substrate holding part 234.

  The pressure receiving stage 240 includes a second substrate holding part 242 and a plurality of suspension parts 244. The suspension portion 244 is suspended from the lower surface of the top plate 212. The second substrate holding unit 242 is supported from below in the vicinity of the lower end of the suspension unit 244 and is disposed to face the pressure stage 230. The semiconductor substrate 120 is electrostatically attracted to the wafer holder 320, and the second substrate holding unit 242 attracts the wafer holder 320 to the lower surface by vacuum suction or the like. Furthermore, the suspension part 244 has a heater 246 and is heated by the heater 246.

  The second substrate holding part 242 is supported by the suspension part 244 from below, but the upward movement is not restricted. However, a plurality of load cells 252, 254 and 256 are sandwiched between the top plate 212 and the second substrate holding part 242. The plurality of load cells 252, 254, 256 form a part of the pressure detection unit 250, regulate upward movement of the second substrate holding unit 242, and are applied upward to the second substrate holding unit 242. Detect pressure.

  In the illustrated state, the support column 214 of the pressing unit 220 is drawn into the cylinder 222, and the pressure stage 230 is lowered. Therefore, there is a wide gap between the pressure stage 230 and the pressure receiving stage 240.

  Of the pair of semiconductor substrates 120 and 150 to be bonded, one semiconductor substrate 150 is inserted into the gap from the side and placed on the pressure stage 230. The other semiconductor substrate 120 is inserted in the same manner and held on the pressure receiving stage 240 so as to face the semiconductor substrate 150. The semiconductor substrates 120 and 150 are aligned with each other in a plane orthogonal to the Z direction. The substrate bonding apparatus 200 may align the semiconductor substrates 120 and 150, or the semiconductor substrates 120 and 150 aligned by other alignment apparatuses may be transported to the substrate bonding apparatus 200. .

  Here, the pressure stage 230 rises toward the pressure receiving stage 240 and presses the semiconductor substrate 120 and the semiconductor substrate 150. Further, the heaters 246 and 236 heat the pressure stage 230 and the pressure receiving stage 240 during pressing. Thereby, the semiconductor substrates 120 and 150 are joined.

  In FIG. 2, the semiconductor substrates 120 and 150 bonded together by the substrate bonding apparatus 200 are shown in a plan view. As shown in this figure, a large number of semiconductor chips 122 and 152 to be diced later are formed vertically and horizontally on the semiconductor substrates 120 and 150. In addition, barcodes 124 and 154 as identification indexes are formed by laser irradiation outside the region where the semiconductor chips 122 and 152 of the semiconductor substrates 120 and 150 are formed. That is, the index placement stage is performed.

  The barcodes 124 and 154 are obtained by converting the ID numbers assigned to the semiconductor substrates 120 and 150 into barcodes, and are arranged on a conveyance path or the like where the semiconductor substrates 120 and 150 are conveyed to the substrate bonding apparatus 200. It is read by a bar code reader. Then, the manufacturing management system manages the stacked semiconductor substrates formed by stacking the semiconductor substrates 120 and 150 in association with the ID numbers indicated by the read barcodes 124 and 154. That is, the information management stage is performed. The bar codes 124 and 154 are separated from the semiconductor chips 122 and 152 in the dicing process.

  In FIG. 3, the semiconductor substrates 120 and 150 to be bonded together by the substrate bonding apparatus 200 are shown in a side sectional view. As shown in this figure, the semiconductor substrates 120 and 150 are bonded via surfaces 121 and 151 that face each other in the substrate stacking direction. A joining step is performed. Further, through holes 123 and 153 penetrating in the thickness direction are formed in the semiconductor chips 122 and 152 of the semiconductor substrates 120 and 150. In the through holes 123 and 153, buried electrodes 126 and 156 in which a conductive material such as Cu is buried are formed.

  Bumps 128 and 158 made of a conductive material such as solder or Au are formed on the through holes 123 and 153 on the surfaces 121 and 151 of the semiconductor chips 122 and 152. The bump 128 protrudes from the surface 121 of the semiconductor chip 122 on which the bump 128 is provided to the semiconductor chip 152 side, and the bump 158 protrudes from the surface 151 of the semiconductor chip 152 on which the bump 158 is provided to the semiconductor chip 122 side. Yes. The through hole 123 and the through hole 153 are arranged so as to overlap when viewed in the substrate stacking direction. For this reason, the semiconductor substrates 120 and 150 aligned with each other are pressurized and heated by the substrate bonding apparatus 200, whereby the bumps 128 and the bumps 158 are bonded by thermocompression bonding, and the semiconductor chip 122 and the semiconductor chip 152 are bonded. Are mechanically and electrically connected.

  In the present embodiment, the bumps 128 and 158 are solder bumps formed by electroplating solder, and are bonded by thermocompression bonding by being heated under pressure. However, the bumps 128 and 158 may be bumps formed of nickel, gold or the like other than the solder bumps. In this case, the mechanical bonding strength between the bump 128 and the bump 158 may be reinforced by an underfill filled between the semiconductor chip 122 and the semiconductor chip 152.

  In the element formation stage before the bonding stage, the semiconductor element 127 is formed on the surface 121 of the semiconductor substrate 120 facing the semiconductor substrate 150, and the semiconductor element 157 is formed on the surface 151 of the semiconductor substrate 150 facing the surface 121. Has been. That is, in the bonding step of bonding the semiconductor substrate 120 and the semiconductor substrate 150, there is a step of bonding the surface 121 of the semiconductor substrate 120 on which the semiconductor element 127 is formed and the surface 151 of the semiconductor substrate 150 on which the semiconductor element 157 is formed. To be implemented.

  A barcode 124 is formed on the outer peripheral portion of the back surface 129 of the surface 121 of the semiconductor substrate 120, and a barcode 154 is formed on the outer peripheral portion of the surface 151 of the semiconductor substrate 150. Here, in the index placement stage, the barcodes 124 and 154 are formed on the back surface 129 of the semiconductor substrate 120 and the surface 151 of the semiconductor substrate 150 by a laser irradiation method. In this index placement stage, the semiconductor elements 127 and 157 are formed. This is performed before the element forming step for forming the semiconductor substrates 120 and 150. Thereby, it is possible to prevent the semiconductor elements 127 and 157 from being soiled by the surface material scattered from the substrate surface by the laser ablation effect in the index placement stage.

  FIG. 4 is a side sectional view showing the semiconductor substrates 120 and 150 bonded to each other through the bonding step. As shown in this figure, a barcode 124 is formed on the back surface 129 of the surface 121 of the semiconductor substrate 120. As a result, the barcode 124 is exposed to the outside of the laminated semiconductor substrate 10, and therefore, when the laminated semiconductor substrate 10 is transported to the next process, the barcode reader reads the ID number from the barcode 124 and uses the read ID number. Thus, the laminated semiconductor substrate 10 can be managed.

  FIG. 5 is a side sectional view showing the bonding stage after the thinning stage. As shown in this figure, in the thinning step, the back surface 159 of the surface 151 of the semiconductor substrate 150 bonded to the semiconductor substrate 120 is polished, so that the semiconductor substrate 150 is thinned. A bump 158 is formed on the polished back surface 159.

  The thinned semiconductor substrate 150 on which the bumps 158 are formed and the semiconductor substrate 120 bonded to the semiconductor substrate 150 are transferred to the substrate bonding apparatus 200 and are held by the second substrate holding unit 242 of the substrate bonding apparatus 200. Is done. At this time, the semiconductor substrate 120 is held by the second substrate holding portion 242, and the back surface 159 of the semiconductor substrate 150 on which the bumps 158 are formed is turned downward.

  In addition, the first substrate holding unit 234 holds the semiconductor substrate 150 before the thinning step. The semiconductor substrate 150 is provided with a semiconductor element 157, bumps 158, and a barcode 154 on a surface 151.

  In the bonding stage in which the unbonded semiconductor substrate 150 and the bonded semiconductor substrate 150 are bonded, the back surface 159 of the bonded semiconductor substrate 150 and the surface 151 of the unbonded semiconductor substrate 150 on which the semiconductor element 157 is formed are formed. The semiconductor substrates 120 and 150 and the unbonded semiconductor substrate 150 are heated under pressure. Thereby, the bump 158 existing on the bonded semiconductor substrate 150 and the bump 158 existing on the unbonded semiconductor substrate 150 are bonded by thermocompression bonding.

  Here, after the pair of semiconductor substrates 150 are bonded to each other, the barcode 124 formed on the back surface 129 of the semiconductor substrate 120 is exposed to the outside of the laminated semiconductor substrate 10. For this reason, when transporting the laminated semiconductor substrate 10 to the next process, the ID number is read from the barcode 124 with the barcode reader, and the laminated semiconductor substrate 10 can be managed using the read ID number.

  FIG. 6 is a side sectional view showing a state in which all the semiconductor substrates constituting the laminated semiconductor substrate 10 are bonded. As shown in this figure, a plurality of semiconductor substrates 150 are further laminated and bonded to the back surface 159 side of the bonded semiconductor substrate 150. The plurality of semiconductor substrates 150 are bonded by overlapping the back surface 159 and the surface 151 on which the semiconductor element 157 is formed. Each of the semiconductor substrates 150 is bonded to the semiconductor substrate 150 and then thinned by polishing the back surface 159. After the thinning, bumps 158 are formed on the back surface 159.

  Here, after each of the semiconductor substrates 150 is bonded to the bonded semiconductor substrate 150, the barcode 124 formed on the back surface 129 of the semiconductor substrate 120 is exposed to the outside of the stacked semiconductor substrate 10. As a result, the bar code 124 is always exposed to the outside of the laminated semiconductor substrate 10 after any bonding stage, and therefore, after any bonding stage, the ID number is read from the bar code 124 with a bar code reader, The stacked semiconductor substrate 10 can be managed using the read ID number.

  In FIG. 7, the laminated semiconductor device 100 is shown in a side sectional view. As shown in this figure, in the laminated semiconductor device 100, an interposer 172 as an external connection substrate is bonded to the lower surface of the lowermost semiconductor chip 122, and a mold as a sealing portion is formed on the upper surface of the uppermost semiconductor chip 152. A portion 182 is formed. In addition, an underfill 184 is filled between the layers.

  A plurality of through holes 173 are formed in the interposer 172 corresponding to the positions of the through holes 123. An embedded electrode 176 in which a conductive material such as Cu is embedded is formed in the through hole 173. In addition, ball-shaped bumps 178 made of a conductive material such as solder or Au are formed on the lower surface of the interposer 172 corresponding to the positions of the through holes 173. In the dicing process described above, since the barcodes 124 and 154 are separated from the semiconductor chips 122 and 152, the stacked semiconductor device 100 does not include the barcodes 124 and 154.

  FIG. 8 is a side sectional view showing a bonding stage in another manufacturing method of the laminated semiconductor device 100. As shown in this figure, in this manufacturing method, the semiconductor substrate 120 is held by the first substrate holding unit 234 and the semiconductor substrate 150 is held by the second substrate holding unit 242. The semiconductor substrate 120 is held by the first substrate holding portion 234 so that the surface 121 on which the semiconductor element 127 is formed faces upward, and the semiconductor substrate 150 has the surface 151 on which the semiconductor element 157 is formed facing upward. The second substrate holder 242 holds the second substrate.

  Here, the barcode 154 is provided on the back surface 159 of the surface 151 of the semiconductor substrate 150 to be bonded to the semiconductor substrate 120. Therefore, after the semiconductor substrate 120 and the semiconductor substrate 150 are bonded, the barcode 154 formed on the back surface 159 of the semiconductor substrate 150 is exposed to the outside of the laminated semiconductor substrate 10. Therefore, even after the bonding step, the ID number is read from the barcode 124 with a barcode reader, and the laminated semiconductor substrate 10 can be managed using the read ID number.

  FIG. 9 is a side sectional view showing a step of further joining the semiconductor substrate 150. As shown in this figure, the semiconductor substrate 150 on which the bumps 158 are formed and the semiconductor substrate 120 bonded to the semiconductor substrate 150 are transferred to the substrate bonding apparatus 200 and held by the second substrate holding unit 242. The At this time, the semiconductor substrate 120 is held by the first substrate holding portion 234, and the surface 151 of the semiconductor substrate 150 on which the bumps 158 are formed faces upward.

  Further, the unbonded semiconductor substrate 150 is held by the second substrate holding portion 242. In the unbonded semiconductor substrate 150, bumps 158 are formed on a surface 151 facing the bonded semiconductor substrate 150, and a semiconductor element 157 and a barcode 154 are formed on the back surface 159 of the surface 151.

  In the bonding stage in which the unbonded semiconductor substrate 150 and the bonded semiconductor substrate 150 are bonded, the surface 151 on which the semiconductor element 157 of the bonded semiconductor substrate 150 is formed and the semiconductor element 157 of the unbonded semiconductor substrate 150 are The back surface 159 of the formed surface 151 is overlaid. Then, the bonded semiconductor substrate 150 and the unbonded semiconductor substrate 150 are heated under pressure. Thereby, the bump 158 existing on the bonded semiconductor substrate 150 and the bump 158 existing on the unbonded semiconductor substrate 150 are bonded by thermocompression bonding.

  Here, after bonding the pair of semiconductor substrates 150, the barcode 154 formed on the back surface 159 of the newly bonded semiconductor substrate 150 is exposed to the outside of the stacked semiconductor substrate 10. For this reason, when transporting the laminated semiconductor substrate 10 to the next process, the ID number is read from the barcode 154 with a barcode reader, and the laminated semiconductor substrate 10 can be managed using the read ID number.

  FIG. 10 is a side sectional view showing a state in which all semiconductor substrates constituting the laminated semiconductor substrate 10 are bonded. As shown in this figure, a plurality of semiconductor substrates 150 are further laminated and bonded to the back surface 159 side of the bonded semiconductor substrate 150. The plurality of semiconductor substrates 150 are bonded by overlapping the back surface 159 and the surface 151 on which the semiconductor element 157 is formed. After each semiconductor substrate 150 is bonded to the semiconductor substrate 150, bumps 158 are formed on the back surface 159.

  Here, after each of the semiconductor substrates 150 is bonded to the bonded semiconductor substrate 150, the barcode 154 formed on the back surface 129 of the newly bonded semiconductor substrate 150 is exposed to the outside of the stacked semiconductor substrate 10. . As a result, the bar code 154 is always exposed to the outside of the laminated semiconductor substrate 10 after any bonding stage, and therefore, after any bonding stage, the ID number is read from the bar code 154 with a bar code reader, The stacked semiconductor substrate 10 can be managed using the read ID number.

  FIG. 11 is a side sectional view showing a bonding stage in another manufacturing method of the laminated semiconductor device 100. As shown in this figure, in this manufacturing method, the back surface 129 of the surface 121 of the semiconductor substrate 120 on which the semiconductor element 127 is formed and the back surface 159 of the surface 151 of the semiconductor substrate 150 on which the semiconductor element 157 is formed face each other. Thus, the semiconductor substrate 120 and the semiconductor substrate 150 are bonded to each other.

  In addition, barcodes 124 are formed on both the surface 121 and the back surface 129 of the semiconductor substrate 120. In addition, barcodes 154 are formed on both the surface 151 and the back surface 159 of the semiconductor substrate 150. Thereby, after bonding the semiconductor substrate 120 and the semiconductor substrate 150, the barcodes 124 and 154 are exposed to the outside of the laminated semiconductor substrate 10. Therefore, after the bonding step, the barcode 124 or the barcode 154 is read by the barcode reader. It is possible to read the ID number from and to manage the laminated semiconductor substrate 10 using the read ID number.

  FIG. 12 is a side sectional view showing a bonding stage in another manufacturing method of the laminated semiconductor device 100. As shown in this figure, in this manufacturing method, the surface 121 of the semiconductor substrate 120 on which the semiconductor element 127 is formed faces the surface 151 of the semiconductor substrate 150 on which the semiconductor element 157 is formed. The semiconductor substrate 150 is bonded. Further, a barcode 124 is formed on the back surface 129 of the surface 121 of the semiconductor substrate 120 so that the barcode 124 is exposed to the outside of the laminated semiconductor substrate 10.

  FIG. 13 shows the laminated semiconductor substrate 10 after a thinning step in which the back surface 129 of the semiconductor substrate 120 is polished to thin the semiconductor substrate 120. As shown in this figure, the barcode 124 formed on the semiconductor substrate 120 is removed in the thinning process.

  Here, in this manufacturing method, after passing through the information management stage and the thinning stage, the barcode 124 having the same identification information as the barcode 124 that has been read and polished and removed by the barcode reader is thinned. Reattach to the back surface 159 of the semiconductor substrate 150 that is not. Thereby, even when the barcode 124 of the semiconductor substrate 120 is removed in the thinning process, the semiconductor substrate 120 can be identified after the thinning process.

  As mentioned above, although this invention was demonstrated using embodiment, the technical scope of this invention is not limited to the range as described in the said embodiment. It will be apparent to those skilled in the art that various modifications or improvements can be added to the above-described embodiment. It is apparent from the scope of the claims that the embodiments added with such changes or improvements can be included in the technical scope of the present invention.

The board | substrate bonding apparatus 200 is shown with a sectional side view. The semiconductor substrates 120 and 150 bonded together by the substrate bonding apparatus 200 are shown in plan view. The semiconductor substrates 120 and 150 bonded together by the substrate bonding apparatus 200 are shown in a side sectional view. A pair of semiconductor substrates 120 and 150 bonded to each other are shown in a side sectional view. The semiconductor substrates 120 and 150 bonded together by the substrate bonding apparatus 200 are shown in a side sectional view. The semiconductor substrates 120 and 150 bonded together by the substrate bonding apparatus 200 are shown in a side sectional view. A laminated semiconductor device 100 is shown in a side sectional view. The semiconductor substrates 120 and 150 bonded together by the substrate bonding apparatus 200 are shown in a side sectional view. The semiconductor substrates 120 and 150 bonded together by the substrate bonding apparatus 200 are shown in a side sectional view. The semiconductor substrates 120 and 150 bonded together by the substrate bonding apparatus 200 are shown in a side sectional view. The semiconductor substrates 120 and 150 bonded together by the substrate bonding apparatus 200 are shown in a side sectional view. The semiconductor substrates 120 and 150 bonded together by the substrate bonding apparatus 200 are shown in a side sectional view. The semiconductor substrates 120 and 150 bonded together by the substrate bonding apparatus 200 are shown in a side sectional view.

DESCRIPTION OF SYMBOLS 10 Laminated semiconductor substrate, 100 Laminated semiconductor device, 120 Semiconductor substrate, 121 surface, 122 Semiconductor chip, 123 Through hole, 124 Bar code, 126 Embedded electrode, 127 Semiconductor element, 128 Bump, 129 Back surface, 150 Semiconductor substrate, 151 surface, 152 Semiconductor chip, 153 Through hole, 154 Bar code, 156 Embedded electrode, 157 Semiconductor element, 158 Bump, 159 Back surface, 172 Interposer, 173 Through hole, 176 Embedded electrode, 178 Bump, 182 Mold part, 184 Underfill, 200 substrate Bonding device, 210 frame, 212 top plate, 214 support, 216 bottom plate, 220 pressing unit, 222 cylinder, 224 piston, 230 pressure stage, 232 support unit, 234 First substrate holding portion, 235 actuator, 236 heater, 240 pressure receiving stage, 242 Second substrate holding portion, 244 suspension portion, 246 heater, 250 pressure detection portion, 252 load cell, 254 load cell, 256 load cell, 320 wafer holder, 350 wafer holder

Claims (11)

A method of manufacturing a laminated semiconductor device by laminating and bonding two semiconductor substrates,
An index placement step of placing identification indices for identifying the two semiconductor substrates, respectively, on the two semiconductor substrates;
Bonding the two semiconductor substrates to each other,
In the index placement stage, the identification index is arranged on each of the two semiconductor substrates so that at least one of the identification indices of the two semiconductor substrates bonded in the bonding stage is exposed,
In correspondence with the identification index exposed after the bonding step, further comprising an information management step of managing information on the stacked semiconductor device,
In the indicator placement step, at least one of the identification indicators of the two semiconductor substrates is exposed after the bonding step, so that the identification indicators are respectively provided on the two semiconductor substrates before the bonding step. And
The bonding step includes a step of bonding another semiconductor substrate on which the identification index is arranged to one of the two semiconductor substrates,
In the index placement stage, the identification index is arranged on each of the plurality of semiconductor substrates such that at least one of the identification indices of the plurality of semiconductor substrates is exposed after any of the bonding stages,
In the index placement stage, a method for manufacturing a stacked semiconductor device, wherein the identification index is disposed on the surface of the one semiconductor substrate having a surface exposed after any of the joining stages. A thinning step of thinning an exposed surface of at least one of the semiconductor substrates after the bonding step;
2. The stacked semiconductor device according to claim 1, wherein in the index placement stage, the identification index corresponding to the information managed in the information management stage is arranged on an exposed surface of the semiconductor substrate that is not thinned in the thinning stage. Manufacturing method. A thinning step of thinning the surface of at least one of the semiconductor substrates having an exposed surface after the bonding step;
2. The stacked semiconductor device according to claim 1, wherein, in the thinning stage, the surface of the semiconductor substrate not attached with the identification index corresponding to information managed in the information management stage of the semiconductor substrate is thinned. Manufacturing method. A thinning step of thinning an exposed surface of at least one of the semiconductor substrates after the bonding step;
When the identification index used in the information management stage is removed in the thinning stage, the identification index associated with the identification information included in the identification index is reattached to at least one exposed surface of the semiconductor substrate. The method for manufacturing a stacked semiconductor device according to claim 1, further comprising an index rearrangement step. After the bonding step, further comprising a thinning step of thinning the surface of the at least one semiconductor substrate having an exposed surface;
2. The method of manufacturing a stacked semiconductor device according to claim 1, wherein in the index placement stage, the identification index is arranged on at least one of the semiconductor substrates so that any one of the identification indices is exposed even after the thinning stage. . A thinning step of thinning the surface of at least one of the semiconductor substrates having an exposed surface after the bonding step;
2. The method for manufacturing a stacked semiconductor device according to claim 1, wherein in the thinning step, the surface of the semiconductor substrate of the semiconductor substrate where the identification index is not exposed is thinned.   7. The method for manufacturing a stacked semiconductor device according to claim 1, wherein, in the index placement stage, the identification indices are arranged on both surfaces of each semiconductor substrate.   8. The method for manufacturing a laminated semiconductor device according to claim 1, wherein the bonding step includes a step of bonding the surfaces of the semiconductor substrates on which the semiconductor elements are formed.   The method for manufacturing a stacked semiconductor device according to claim 1, wherein the bonding step includes a step of bonding back surfaces of surfaces of the two semiconductor substrates on which semiconductor elements are formed.   The bonding step includes a step of bonding a surface of the semiconductor substrate on which the semiconductor element is formed and a back surface of the surface of the other semiconductor substrate on which the semiconductor element is formed. The manufacturing method of the laminated semiconductor device of any one of these.   11. The method for manufacturing a stacked semiconductor device according to claim 1, further comprising an element formation step of forming a semiconductor element on each of the semiconductor substrates before the bonding step. 11.

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