JP2013016850A - Semiconductor device and manufacturing method of the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent unfilling of resin in an overhang portion with a simple procedure and structure even when multiple semiconductor chips are laminated and the overhang portion occurs.SOLUTION: A semiconductor device 100 includes: a substrate 102; a first semiconductor chip 110 mounted on the substrate 102; a second semiconductor chip 120 laminated on the first semiconductor chip 110 so as to be separated from the first semiconductor chip 110 and provided having a portion overhung from the first semiconductor chip 110; and an insulation resin 132 filling a space between the first semiconductor chip 110 and the second semiconductor chip 120 and filling a space between the portion of the second semiconductor chip 120 which is overhung from the first semiconductor chip 110 and the substrate 102.

Description

  The present invention relates to a semiconductor device and a manufacturing method thereof.

  When mounting multiple semiconductor elements on a substrate such as a wiring board, when stacking semiconductor elements of the same size on a semiconductor element, a spacer (raising) smaller in size than the semiconductor element is placed on the lower semiconductor element. And a structure in which an upper semiconductor element is provided thereon is employed. This is to avoid contact between the wire of the lower semiconductor element and the upper semiconductor element. However, there is a problem that an overhang structure is generated by the spacer, and the sealing resin is not filled and voids are generated under the overhang structure depending on the size of the filler of the sealing resin.

  Japanese Patent Application Laid-Open No. 2006-128169 describes a semiconductor device having a configuration in which no spacer is used. In this document, two types of adhesive layers are formed on the bottom of the second semiconductor chip stacked on the first semiconductor chip mounted on the substrate, and the wire of the first semiconductor chip is used as the adhesive layer. An intrusive configuration is described.

  However, Patent Document 1 has a problem that an overhang structure is formed when the upper semiconductor chip is larger in size than the lower semiconductor chip, and the sealing resin is not filled and voids are still generated under the overhang structure. . In addition, when the upper semiconductor element is larger in size than the lower semiconductor element, there is no support for bonding the upper semiconductor element, so that the bonding strength is not sufficient and bonding may not be performed.

  In Patent Document 2 (Japanese Patent Laid-Open No. 2000-277559), a first pellet (element) and a second pellet on the upper stage so as not to overlap with the bonding pad of the lower first pellet are formed on the substrate. A structure in which an insulating material is filled in the space between the substrate and the portion (overhang structure) where the second pellet protrudes from the first pellet and the second pellet is described. With this configuration, it is said that the upper pellets can be sufficiently fixed.

JP 2006-128169 A JP 2000-277559 A

  However, the technique described in Patent Document 2 has a special arrangement in which the second pellet does not overlap with the bonding pad of the first pellet in the lower stage, and there are limitations on the shape and arrangement of the semiconductor element. In addition, after the second pellet is stacked on the first pellet, there is a problem that the number of steps increases because the number of steps for filling the insulating material increases.

According to the present invention,
A substrate,
A first semiconductor chip mounted on the substrate;
A second semiconductor chip that is stacked on the first semiconductor chip in a state of being separated from the first semiconductor chip, and has a portion overhanging from the first semiconductor chip;
Insulation filled between the first semiconductor chip and the second semiconductor chip, and filled between the portion where the second semiconductor chip overhangs from the first semiconductor chip and the substrate. Resin,
A semiconductor device is provided.

According to the present invention,
A step of stacking and mounting a second semiconductor chip on the first semiconductor chip mounted on the substrate;
The process is
An insulating resin layer having the same size as the second semiconductor chip and the second semiconductor chip so as to have a portion overhanging from the first semiconductor chip in plan view on the first semiconductor chip. Arranging in this order; and
The second semiconductor chip is pressed toward the first semiconductor chip to fill the insulating resin between the first semiconductor chip and the second semiconductor chip, and the second semiconductor Filling the insulating resin between a portion where the chip overhangs from the first semiconductor chip and the substrate;
A method for manufacturing a semiconductor device is provided.

  According to this configuration, the insulating resin provided between the second semiconductor chip and the first semiconductor chip is also disposed below the portion where the second semiconductor chip overhangs from the first semiconductor chip. Thus, it is possible to prevent unfilling of the sealing resin and generation of voids with a simple procedure and configuration. Further, it is possible to prevent the sealing resin from being unfilled and the generation of voids regardless of the arrangement of the second semiconductor chip and the first semiconductor chip.

  It should be noted that any combination of the above-described constituent elements and a conversion of the expression of the present invention between a method, an apparatus, and the like are also effective as an aspect of the present invention.

  According to the present invention, unfilled sealing resin can be prevented with a simple procedure and configuration even when a plurality of semiconductor chips are stacked and an overhanging portion is generated.

It is sectional drawing which shows the structure of the semiconductor device in embodiment of this invention. It is a top view which shows the structure of the semiconductor device in embodiment of this invention. It is process sectional drawing which shows the manufacturing procedure of the semiconductor device in embodiment of this invention. FIG. 4 is a diagram showing another example of the semiconductor device shown in FIGS. 1 to 3. It is a figure which shows the other example of the top view of the semiconductor device shown in FIG.4 (b). FIG. 6 is a diagram showing another example of the semiconductor device shown in FIGS. 1 to 5. FIG. 6 is a diagram showing another example of the semiconductor device shown in FIGS. 1 to 5. FIG. 8 is a cross-sectional view illustrating another example of the semiconductor device illustrated in FIG. 7. FIG. 4 is a cross-sectional view showing another example of the semiconductor device shown in FIGS. 1 to 3. FIG. 4 is a cross-sectional view showing another example of the semiconductor device shown in FIGS. 1 to 3.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In all the drawings, the same reference numerals are given to the same components, and the description will be omitted as appropriate.

  FIG. 1 is a cross-sectional view showing a configuration of a semiconductor device 100 in the present embodiment. FIG. 2 is a plan view schematically showing the semiconductor device 100. FIG. 1 corresponds to a cross-sectional view taken along the line A-A ′ of FIG. 2. In FIG. 2, each element is described only with a line in order to make the arrangement relationship of each element easy to understand.

  The semiconductor device 100 includes a substrate 102, a first semiconductor chip 110 mounted on the substrate 102, and a second semiconductor chip 120 stacked on the first semiconductor chip 110. The second semiconductor chip 120 is stacked in a state of being separated from the first semiconductor chip 110 and provided with an overhanging portion from the first semiconductor chip 110. The overhanging portion is a portion where the first semiconductor chip 110 does not exist under the second semiconductor chip 120 in plan view. The substrate 102 can be a wiring substrate including a wiring layer. In the present embodiment, the substrate 102 can be a multilayer wiring substrate in which a plurality of wiring layers are connected.

  The semiconductor device 100 also includes an insulating resin 132 filled between the first semiconductor chip 110 and the second semiconductor chip 120. The insulating resin 132 is also provided so as to be filled between the portion where the second semiconductor chip 120 overhangs from the first semiconductor chip 110 and the substrate 102. The insulating resin 132 can be configured to include, for example, an epoxy resin, a curing agent, a filler such as silica, a flexible agent, and the like. Moreover, the insulating resin 132 can be configured to have, for example, a heat dissipation effect. In order to have such an effect, the insulating resin 132 can be configured to include, for example, alumina or the like as a filler.

  The semiconductor device 100 further includes a sealing resin 140 that embeds the second semiconductor chip 120 and the first semiconductor chip 110. The sealing resin 140 can be configured to include, for example, an epoxy resin, a curing agent, a filler such as silica, a flexible agent, and the like. Further, the sealing resin 140 can be configured to include carbon black in order to protect the first semiconductor chip 110 and the second semiconductor chip 120 to be sealed. The insulating resin 132 may also include carbon black. However, since the insulating resin 132 is further covered with the sealing resin 140, the content of carbon black can be reduced.

  Further, the first semiconductor chip 110 has a first bonding pad (not shown) formed on the surface facing the second semiconductor chip 120 and a bonding wire that connects the first bonding pad and the substrate 102. 112 (first bonding wire). The second semiconductor chip 120 may be configured to overhang on at least a part of the bonding wire 112. Further, the insulating resin 132 embeds at least a part of the bonding wire 112 located below the portion where the second semiconductor chip 120 is overhanging.

  In the present embodiment, an insulating resin 132 is formed on the entire surface of the second semiconductor chip 120 facing the first semiconductor chip 110 (hereinafter also referred to as a back surface). The insulating resin 132 is formed on the entire back surface of the second semiconductor chip 120 with a film thickness that is at least equal to the distance between the first semiconductor chip 110 and the second semiconductor chip 120. In the present embodiment, the second semiconductor chip 120 is configured to overhang on all the bonding wires 112 of the first semiconductor chip 110. Further, the bonding wire 112 of the first semiconductor chip 110 is completely embedded with the insulating resin 132.

  The second semiconductor chip 120 includes a second bonding pad (not shown) formed on a surface opposite to the surface facing the first semiconductor chip 110 in the overhanged portion, the second bonding pad, And a bonding wire 122 (second bonding wire) for connecting to the substrate 102.

FIG. 3 is a process cross-sectional view illustrating the manufacturing procedure of the semiconductor device 100 according to the present embodiment. Hereinafter, the manufacturing procedure of the semiconductor device 100 will be described with reference to FIG.
First, the first semiconductor chip 110 is attached onto the substrate 102 via an adhesive 130 that is a mount material. The adhesive 130 can be, for example, a conductive paste such as an Ag paste, an insulating paste such as an epoxy resin, or a die attach film (DAF). Next, the first bonding pad of the first semiconductor chip 110 and the substrate 102 are electrically connected via the bonding wire 112. As a result, the first semiconductor chip 110 is mounted on the substrate 102.

  Subsequently, the second semiconductor chip 120 is stacked and mounted on the first semiconductor chip 110 mounted on the substrate 102. In this step, an insulating resin 132 layer of the same size as the second semiconductor chip 120 and the second semiconductor chip 120 are formed on the first semiconductor chip 110 so as to have a portion overhanging from the first semiconductor chip 110 in plan view. The step of arranging the semiconductor chips 120 in this order, and the second semiconductor chip 120 is pressed in the direction of the first semiconductor chip 110 so that the gap between the first semiconductor chip 110 and the second semiconductor chip 120 is reduced. Filling the insulating resin 132 and filling the insulating resin 132 between the portion where the second semiconductor chip 120 overhangs from the first semiconductor chip 110 and the substrate 102.

  In the present embodiment, a layer of insulating resin 132 is attached to the entire back surface of the second semiconductor chip 120 as a mounting material. In this embodiment, the layer of the insulating resin 132 can be formed into a film shape. For example, the layer of the insulating resin 132 can be a film-like layer having adhesiveness on both sides.

  Further, the layer of the insulating resin 132 has a film thickness equal to or greater than the thickness of the lower first semiconductor chip 110. Although not particularly limited, the height of the first semiconductor chip 110 mounted on the lower stage of the second semiconductor chip 120 is, for example, about 15 to 100 μm. In consideration of the height of the bonding wire 112, the thickness of the layer of the insulating resin 132 is desirably equal to or greater than the thickness obtained by adding about 50 μm to the height of the first semiconductor chip 110.

  As described above, the second semiconductor chip 120 with the film-like insulating resin 132 attached to the back surface is mounted on the substrate 102 on which the first semiconductor chip 110 is mounted, and the second semiconductor chip 120 is mounted on the first semiconductor chip 120. Is pressed in the direction of the semiconductor chip 110 (FIG. 3A). The layer of the insulating resin 132 is applied to the back surface of the second semiconductor chip 120 in an uncured state. When the second semiconductor chip 120 is mounted on the first semiconductor chip 110, the second semiconductor chip 120 can be heated. Thereby, the layer of the insulating resin 132 is softened (gelled), the viscosity is lowered, and the bonding wire 112 can be embedded with the insulating resin 132 without deforming the bonding wire 112 of the first semiconductor chip 110. . Thereafter, the insulating resin 132 is cured. Thereby, the insulating resin 132 is filled between the first semiconductor chip 110 and the second semiconductor chip 120, and the region between the first semiconductor chip 110 and the second semiconductor chip 120 is filled with the insulating resin 132. It can be an embedded configuration. At this time, the insulating resin 132 formed on the back surface of the portion where the second semiconductor chip 120 overhangs on the first semiconductor chip 110 is brought into contact with the substrate 102. As a result, the insulating resin 132 is also filled between the portion where the second semiconductor chip 120 is overhanged and the substrate 102. At the same time, the bonding wires 112 of the first semiconductor chip 110 are collectively filled with the insulating resin 132. As a result, the configuration shown in FIG.

  Thereafter, the second bonding pad formed on the surface of the second semiconductor chip 120 and the substrate 102 are electrically connected via the bonding wire 122. As a result, the second semiconductor chip 120 is mounted on the substrate 102 (FIG. 3C).

  Subsequently, the bonding wires 122 of the second semiconductor chip 120, the first semiconductor chip 110, and the second semiconductor chip 120 are sealed with a sealing resin 140. Thereby, the semiconductor device 100 having the configuration shown in FIG. 1 is obtained.

  Further, when a film-like layer having adhesiveness on both sides is used as the insulating resin 132, the insulating resin is not attached to the back surface of the second semiconductor chip 120 but before the second semiconductor chip 120 is mounted. Alternatively, 132 may be attached to the first semiconductor chip 110. In this case, the insulating resin 132 is set to be equal to or larger than the size of the second semiconductor chip 120 in a plan view, and the insulating resin 132 is placed at the same place as the second semiconductor chip 120 on the first semiconductor chip 110 is mounted. Arrange it. Next, the second semiconductor chip 120 is mounted on the insulating resin 132 so as to overlap with the insulating resin 132, and the second semiconductor chip 120 is pressed in the direction of the first semiconductor chip 110. Also by this, it can be set as the structure shown in FIG.3 (b).

The effect of the semiconductor device 100 in the present embodiment will be described.
In the present embodiment, the insulating resin 132 filled between the second semiconductor chip 120 and the first semiconductor chip 110 is below the portion of the second semiconductor chip 120 overhanging from the first semiconductor chip 110. Therefore, it is possible to prevent unfilling of the sealing resin and generation of voids in the overhanged portion by a simple procedure. Further, regardless of the arrangement of the second semiconductor chip 120 and the first semiconductor chip 110, it is possible to prevent unfilling of the sealing resin and generation of voids.

  Furthermore, since the insulating resin 132 is filled below the overhanging portion of the second semiconductor chip 120, the insulating resin 132 serves as a support when bonding the second semiconductor chip 120, and the bonding wire 122 is bonded. Can be performed satisfactorily. Furthermore, since the bonding wire 112 of the first semiconductor chip 110 is embedded with the insulating resin 132, the influence of the wire flow caused by the sealing resin 140 and the influence of the filler contained in the sealing resin 140 on the wire is eliminated. Can do.

  In the present embodiment, since the bonding wire 112 is embedded with one kind of insulating resin 132, it is possible to eliminate the possibility of the bonding wire 112 being broken due to the difference in linear expansion of the material surrounding the bonding wire 112 or the like. . Furthermore, a spacerless structure is provided, and the package can be reduced in size.

(Other examples)
FIG. 4 is a diagram illustrating another example of the semiconductor device 100 illustrated in FIGS. 1 to 3. 4A is a cross-sectional view, and FIG. 4B is a plan view. FIG. 4A corresponds to the BB ′ cross-sectional view of FIG. In FIG. 4B, each element is described only with a line for easy understanding of the arrangement relationship of each element.

  In this example, a configuration in which a third semiconductor chip 150 is further mounted in parallel with the first semiconductor chip 110 in the same layer as the first semiconductor chip 110 on the substrate 102 can be employed. The second semiconductor chip 120 covers the first semiconductor chip 110 and the third semiconductor chip 150 and has a portion overhanging from the first semiconductor chip 110 and the third semiconductor chip 150. it can.

  The third semiconductor chip 150 includes a bonding pad (not shown) formed on the surface facing the second semiconductor chip 120, and a bonding wire 152 that connects the bonding pad and the substrate 102. Here, the bonding wire 152 may be completely embedded with the insulating resin 132. Further, the portion where the second semiconductor chip 120 overhangs from the first semiconductor chip 110 and the third semiconductor chip 150, that is, below the second semiconductor chip 120 in a plan view, the first semiconductor chip 110 or the third semiconductor chip 120. In a place where the semiconductor chip 150 is not formed, the insulating resin 132 may be in contact with the substrate 102 and the space between the second semiconductor chip 120 and the substrate 102 may be filled with the insulating resin 132.

  In this example, the film thickness of the insulating resin 132 when the second semiconductor chip 120 is mounted on the first semiconductor chip 110 is higher than that of the first semiconductor chip 110 and the third semiconductor chip 150. The film thickness can be made equal to or greater than the height of the higher chip by about 50 μm. Even with such a configuration, the same effect as the semiconductor device 100 shown in FIGS. 1 to 3 can be obtained.

  FIG. 5 is a diagram illustrating another example of a plan view of the semiconductor device 100 illustrated in FIG. FIG. 4A also corresponds to the B-B ′ cross-sectional view of FIG. 5. In FIG. 5 as well, each element is indicated only by a line in order to make the arrangement relationship of each element easy to understand.

  As shown in the figure, the first semiconductor chip 110 and the third semiconductor chip 150 on the substrate 102 may be arranged in parallel with the semiconductor chip 160 on the same layer. The second semiconductor chip 120 may cover the first semiconductor chip 110, the third semiconductor chip 150, and the semiconductor chip 160, and may have a portion overhanging from these.

  The semiconductor chip 160 includes a bonding pad (not shown) formed on the surface facing the second semiconductor chip 120, and a bonding wire 162 that connects the bonding pad and the substrate 102. Here, the bonding wire 162 can also be configured to be completely embedded with the insulating resin 132. Further, the portion where the second semiconductor chip 120 overhangs from the first semiconductor chip 110, the third semiconductor chip 150, and the semiconductor chip 160, that is, the first semiconductor chip 110 below the second semiconductor chip 120 in plan view. In a place where the third semiconductor chip 150 or the semiconductor chip 160 is not formed, the insulating resin 132 contacts the substrate 102 and the space between the second semiconductor chip 120 and the substrate 102 is filled with the insulating resin 132. Can be configured.

  In this example, the thickness of the insulating resin 132 when the second semiconductor chip 120 is mounted on the first semiconductor chip 110 is the thickness of the first semiconductor chip 110, the third semiconductor chip 150, and the semiconductor chip 160. The film thickness can be made equal to or larger than the height of the highest chip by about 50 μm. Even with such a configuration, the same effect as the semiconductor device 100 shown in FIGS. 1 to 3 can be obtained.

  6 and 7 are diagrams showing still another example of the semiconductor device 100 shown in FIGS. 1 to 5. 6 is a cross-sectional view, and FIG. 7 is a plan view. FIG. 6A corresponds to the C-C ′ sectional view of FIG. 7. In FIG. 7 as well, each element is indicated only by a line in order to make the arrangement relationship of each element easy to understand. 6A shows a configuration in which one first semiconductor chip 110 is provided under the second semiconductor chip 120, and FIG. 6B shows a configuration under the second semiconductor chip 120 as in FIG. 1 shows a configuration in which a first semiconductor chip 110 and a third semiconductor chip 150 are provided. Here, the first semiconductor chip 110 mounted in the lower stage is different from the example shown in FIGS. 1 to 5 in that it is not completely covered by the second semiconductor chip 120.

  Also in this example, the second semiconductor chip 120 can be configured to have a portion overhanging from the first semiconductor chip 110 and the third semiconductor chip 150. The second semiconductor chip 120 can be configured to overhang on at least a part of the bonding wires 112 and the bonding wires 152 of the lower semiconductor chip. Also, the insulating resin 132 embeds the bonding wire 112 located below the portion where the second semiconductor chip 120 is overhanging.

  Further, the portion where the second semiconductor chip 120 overhangs from the first semiconductor chip 110 and the third semiconductor chip 150, that is, below the second semiconductor chip 120 in a plan view, the first semiconductor chip 110 or the third semiconductor chip 120. In a place where the semiconductor chip 150 is not formed, the insulating resin 132 may be in contact with the substrate 102 and the space between the second semiconductor chip 120 and the substrate 102 may be filled with the insulating resin 132. Even with such a configuration, the same effect as the semiconductor device 100 shown in FIGS. 1 to 5 can be obtained.

  FIG. 8 is a plan view showing another example of the semiconductor device 100 shown in FIG. In FIG. 8, each element is indicated only by a line in order to make the arrangement relationship of each element easy to understand. Here, it differs from the example shown in FIG. 7 in that a semiconductor chip 170 is further provided on the first semiconductor chip 110 mounted in the lower stage.

  The semiconductor chip 170 includes a bonding pad (not shown) formed on a surface opposite to the surface facing the first semiconductor chip 110, and a bonding wire 172 that connects the bonding pad and the substrate 102. In this example, the semiconductor chip 170 may be configured to be mounted on the first semiconductor chip 110 with the same insulating resin 132 as that attached to the second semiconductor chip 120, and an adhesive agent A configuration in which the first semiconductor chip 110 is mounted with the same adhesive as 130 can also be adopted. Even with such a configuration, the same effect as the semiconductor device 100 shown in FIGS. 1 to 3 can be obtained.

  FIG. 9 is a cross-sectional view illustrating another example of the semiconductor device 100 illustrated in FIGS. 1 to 3. Here, it differs from the example shown in FIGS. 1 to 3 in that the bonding wire 112 of the first semiconductor chip 110 mounted in the lower stage is not completely embedded with the insulating resin 132.

  That is, in this example, the second semiconductor chip 120 can be configured to overhang on at least a part of the bonding wire 112. Also, the insulating resin 132 embeds a part of the bonding wire 112 located below the portion where the second semiconductor chip 120 is overhanged, that is, a connection portion with the bonding pad on the surface of the first semiconductor chip 110. The remaining part of the first semiconductor chip 110 is embedded with a sealing resin 140.

  Even with such a configuration, it is possible to prevent unfilling of resin and generation of voids with a simple procedure. In addition, when the second semiconductor chip 120 is bonded, the insulating resin 132 serves as a support, and the bonding wire 122 can be bonded well. Furthermore, since the connection portion with the bonding pad on the surface of the first semiconductor chip 110 is embedded with the insulating resin 132, a wire flow or the like due to the sealing resin 140 can be prevented.

  FIG. 10 is a cross-sectional view illustrating another example of the semiconductor device 100 illustrated in FIGS. 1 to 3. In this example, the first semiconductor chip 110 is different from the structure shown in FIGS. 1 to 3 in that the first semiconductor chip 110 is flip-chip connected to the substrate 102 via the bump 114 instead of the bonding wire 112. Even with such a configuration, it is possible to prevent unfilled resin and generation of voids in the overhanged portion by a simple procedure. In addition, when the second semiconductor chip 120 is bonded, the insulating resin 132 serves as a support, and the bonding wire 122 can be bonded well.

  As mentioned above, although embodiment of this invention was described with reference to drawings, these are the illustrations of this invention, Various structures other than the above are also employable.

  In the above embodiment, the case where the insulating resin 132 is a film-like layer formed in a film shape has been described as an example, but the insulating resin 132 may be a liquid type resin. For example, the semiconductor device 100 can be manufactured by applying a large amount of liquid type resin on the surface of the first semiconductor chip 110 and disposing the second semiconductor chip 120 on the first semiconductor chip 110. If the shape of the liquid type resin can be maintained to some extent, the liquid type resin is applied to the back surface of the second semiconductor chip 120 and disposed on the first semiconductor chip 110 to manufacture the semiconductor device 100. You can also

100 Semiconductor Device 102 Substrate 110 First Semiconductor Chip 112 Bonding Wire 114 Bump 120 Second Semiconductor Chip 122 Bonding Wire 130 Adhesive 132 Insulating Resin 140 Sealing Resin 150 Third Semiconductor Chip 152 Bonding Wire 160 Semiconductor Chip 162 Bonding Wire 170 Semiconductor chip 172 Bonding wire

In the above embodiment, the case where the insulating resin 132 is a film-like layer formed in a film shape has been described as an example, but the insulating resin 132 may be a liquid type resin. For example, the semiconductor device 100 can be manufactured by applying a large amount of liquid type resin on the surface of the first semiconductor chip 110 and disposing the second semiconductor chip 120 on the first semiconductor chip 110. If the shape of the liquid type resin can be maintained to some extent, the liquid type resin is applied to the back surface of the second semiconductor chip 120 and disposed on the first semiconductor chip 110 to manufacture the semiconductor device 100. You can also
The present invention can also apply the following configurations.
(1)
A substrate,
A first semiconductor chip mounted on the substrate;
A second semiconductor chip that is stacked on the first semiconductor chip in a state of being separated from the first semiconductor chip, and has a portion overhanging from the first semiconductor chip;
Insulation filled between the first semiconductor chip and the second semiconductor chip, and filled between the portion where the second semiconductor chip overhangs from the first semiconductor chip and the substrate. Resin,
A semiconductor device including:
(2)
In the semiconductor device according to (1),
A semiconductor device in which the insulating resin is formed on the entire surface of the second semiconductor chip facing the first semiconductor chip.
(3)
In the semiconductor device according to (1) or (2),
The first semiconductor chip includes a first bonding pad formed on a surface facing the second semiconductor chip, and a first bonding wire connecting the first bonding pad and the substrate. ,
The second semiconductor chip overhangs on at least a portion of the first bonding wire;
The semiconductor device in which the insulating resin fills at least a part of the first bonding wire located below a portion where the second semiconductor chip is overhanging.
(4)
In the semiconductor device according to any one of (1) to (3),
The second semiconductor chip includes a second bonding pad formed on a surface opposite to the surface facing the first semiconductor chip, the second bonding pad, and the substrate in the overhang portion. And a second bonding wire for connecting the semiconductor device.
(5)
A step of stacking and mounting a second semiconductor chip on the first semiconductor chip mounted on the substrate;
The process is
An insulating resin layer having the same size as the second semiconductor chip and the second semiconductor chip so as to have a portion overhanging from the first semiconductor chip in plan view on the first semiconductor chip. Arranging in this order; and
The second semiconductor chip is pressed toward the first semiconductor chip to fill the insulating resin between the first semiconductor chip and the second semiconductor chip, and the second semiconductor Filling the insulating resin between a portion where the chip overhangs from the first semiconductor chip and the substrate;
A method of manufacturing a semiconductor device including:
(6)
In the method for manufacturing a semiconductor device according to (5),
In the step of arranging the insulating resin layer and the second semiconductor chip in this order, the insulating resin layer is attached to the entire surface of the second semiconductor chip facing the first semiconductor chip. A method for manufacturing a semiconductor device, wherein the second semiconductor chip is disposed on the first semiconductor chip in a state where the second semiconductor chip is placed.
(7)
In the method for manufacturing a semiconductor device according to (5) or (6),
The method for manufacturing a semiconductor device, wherein the insulating resin layer has a film thickness equal to or greater than a height of the first semiconductor chip.
(8)
In the method for manufacturing a semiconductor device according to any one of (5) to (7),
The method for manufacturing a semiconductor device, wherein the insulating resin layer is a layer formed in a film shape.

Claims (8)

A substrate,
A first semiconductor chip mounted on the substrate;
A second semiconductor chip that is stacked on the first semiconductor chip in a state of being separated from the first semiconductor chip, and has a portion overhanging from the first semiconductor chip;
Insulation filled between the first semiconductor chip and the second semiconductor chip, and filled between the portion where the second semiconductor chip overhangs from the first semiconductor chip and the substrate. Resin,
A semiconductor device including: The semiconductor device according to claim 1,
A semiconductor device in which the insulating resin is formed on the entire surface of the second semiconductor chip facing the first semiconductor chip. The semiconductor device according to claim 1 or 2,
The first semiconductor chip includes a first bonding pad formed on a surface facing the second semiconductor chip, and a first bonding wire connecting the first bonding pad and the substrate. ,
The second semiconductor chip overhangs on at least a portion of the first bonding wire;
The semiconductor device in which the insulating resin fills at least a part of the first bonding wire located below a portion where the second semiconductor chip is overhanging. The semiconductor device according to any one of claims 1 to 3,
The second semiconductor chip includes a second bonding pad formed on a surface opposite to the surface facing the first semiconductor chip, the second bonding pad, and the substrate in the overhang portion. And a second bonding wire for connecting the semiconductor device. A step of stacking and mounting a second semiconductor chip on the first semiconductor chip mounted on the substrate;
The process is
An insulating resin layer having the same size as the second semiconductor chip and the second semiconductor chip so as to have a portion overhanging from the first semiconductor chip in plan view on the first semiconductor chip. Arranging in this order; and
The second semiconductor chip is pressed toward the first semiconductor chip to fill the insulating resin between the first semiconductor chip and the second semiconductor chip, and the second semiconductor Filling the insulating resin between a portion where the chip overhangs from the first semiconductor chip and the substrate;
A method of manufacturing a semiconductor device including: In the manufacturing method of the semiconductor device according to claim 5,
In the step of arranging the insulating resin layer and the second semiconductor chip in this order, the insulating resin layer is attached to the entire surface of the second semiconductor chip facing the first semiconductor chip. A method for manufacturing a semiconductor device, wherein the second semiconductor chip is disposed on the first semiconductor chip in a state where the second semiconductor chip is placed. In the manufacturing method of the semiconductor device according to claim 5 or 6,
The method for manufacturing a semiconductor device, wherein the insulating resin layer has a film thickness equal to or greater than a height of the first semiconductor chip. In the manufacturing method of the semiconductor device in any one of Claim 5 to 7,
The method for manufacturing a semiconductor device, wherein the insulating resin layer is a layer formed in a film shape.

Images