JP2013098352A - Mobile device exposure device - Google Patents

Abstract

The heat of an armature coil is efficiently exhausted.
SOLUTION: The air outside the exposure apparatus (the surface plate 21) is adjusted to a predetermined temperature by the compressed air supply device 80 via the pressure reducing valve R1 and the temperature stabilizing element HS, and the surface of the surface plate 21 (the porous cover) In the gap 21c). Thereby, the heat of the armature coil constituting the planar motor is exhausted, the atmosphere on the surface plate 21 is always maintained at a constant temperature, and the temperature fluctuation of the surrounding gas is suppressed. In addition, it is possible to maintain high position measurement accuracy of a wafer interferometer configured using an interferometer, and it is possible to improve wafer (substrate stage) positioning accuracy and improve throughput.
[Selection] Figure 4

Description

  The present invention relates to a mobile device and an exposure apparatus, and more particularly, a mobile device that drives a mobile device that moves on a base, and a lithography process that includes the mobile device and manufactures semiconductor elements, liquid crystal display elements, and the like. Relates to an exposure apparatus used in the above.

  In lithography processes for manufacturing electronic devices (microdevices) such as semiconductor elements and liquid crystal display elements, a step-and-repeat reduction projection exposure apparatus (so-called stepper) and a step-and-scan reduction projection exposure are mainly used. Devices (so-called scanning steppers (also called scanners)) are used. In these exposure apparatuses, illumination light is formed on a reticle by projecting it onto a wafer (or a glass plate or the like) coated with a photosensitive agent (resist) via a reticle (or mask) and a projection optical system. The pattern (reduced image) is sequentially transferred to a plurality of shot areas on the wafer.

  A planar motor that drives a wafer stage that holds and moves the wafer in a two-dimensional direction to improve wafer positioning accuracy and throughput, for example, a variable magnetoresistive drive system that can drive the wafer stage in a non-contact manner A flat motor using a structure in which two linear pulse motors are coupled for two axes or a Lorentz electromagnetic force drive in which a linear motor is developed in a two-dimensional direction has been developed (for example, Patent Document 1).

  However, in any planar motor, heat generation of the coil unit becomes a problem by flowing a large current through the coil unit (the armature coil included therein) in order to obtain a large driving force. The heat generated by the coil unit, for example, causes temperature fluctuations in the air around the wafer stage, causing measurement errors in the position measurement system of the wafer stage configured using an interferometer, and positioning accuracy of the wafer (wafer stage), Further, the throughput is reduced.

US Pat. No. 5,196,745

  The present invention has been made under the above circumstances, and from a first viewpoint, a moving body that moves on a surface plate, and a stator that includes a plurality of coil units arranged in the surface plate, A driving device including a mover including at least one magnet unit provided in the moving body; and a gas outside the surface plate is regulated to a predetermined pressure via a pressure reducing valve; A gas supply device that regulates the temperature of the gas to a predetermined temperature via a temperature stabilizing element and supplies the gas via the temperature stabilizing element onto the surface of the surface plate facing the moving body. It is a body device.

  According to this, by supplying the gas outside the surface plate adjusted to a predetermined pressure and a predetermined temperature via the pressure reducing valve and the temperature stabilizing element onto the surface facing the moving body of the surface plate, a plurality of coils It becomes possible to suppress the temperature fluctuation of the air around the moving body on the base due to the heat generation of the unit.

  According to a second aspect of the present invention, there is provided an exposure apparatus that irradiates an energy beam to form a pattern on an object, and includes the movable body apparatus of the present invention that drives the movable body that holds the object. It is an exposure apparatus.

  According to this, since the temperature variation of the air around the moving body on the base can be suppressed by providing the moving body device of the present invention, the positioning accuracy of the moving body can be improved and the throughput can be improved. .

It is a figure which shows schematically the structure of exposure apparatus. It is a top view which shows a substrate stage apparatus. It is the sectional view on the AA line of FIG. It is a figure which shows the structure of a compressed air supply apparatus. FIGS. 5A and 5B are diagrams for explaining gas temperature control and pressure control by the compressed air supply device of FIG. 4, respectively. FIG. 2 is a block diagram showing a main configuration of a control system of the exposure apparatus in FIG. 1. It is a figure which shows the deformation | transformation structure of a compressed air supply apparatus. FIGS. 8A and 8B are diagrams for explaining gas temperature control and pressure control by the compressed air supply device of FIG. 7, respectively.

  Hereinafter, an embodiment of the present invention will be described with reference to FIGS.

  FIG. 1 schematically shows the overall configuration of an exposure apparatus 100 according to the present embodiment. The exposure apparatus 100 is a so-called step-and-scan exposure type scanning exposure apparatus.

  The exposure apparatus 100 includes an illumination system 10, a reticle stage RST that holds a reticle (mask) R, a reticle stage drive system 11 that drives the reticle stage RST, a projection optical system PL, a substrate stage WST that holds a wafer W as a substrate, and A substrate stage apparatus 30 including a stage drive system (planar motor) 50 for driving the substrate stage WST and the control system thereof are provided.

  The illumination system 10 includes, for example, a light source unit, a shutter, a secondary light source forming optical system, a beam splitter, a condensing lens system, a reticle blind, and an imaging lens system as disclosed in JP-A-9-320956. Both of them are not shown) and emit illumination light for exposure with a substantially uniform illuminance distribution. With this illumination light, the rectangular (or arc-shaped) illumination area IAR on the reticle R is illuminated with uniform illuminance.

  On reticle stage RST, reticle R is fixed, for example, by vacuum suction. The reticle stage RST is designated in a predetermined scanning direction (here, Y-axis direction) by a reticle stage drive system 11 (see FIG. 6) constituted by a linear motor or the like on a reticle base (not shown). It can be driven at the scanning speed.

  A movable mirror 15 that reflects a laser beam from a reticle laser interferometer (hereinafter referred to as “reticle interferometer”) 16 is fixed on the reticle stage RST, and the position of the reticle stage RST in the stage moving surface is determined by reticle interference. The total 16 is always detected with a resolution of about 0.5 to 1 nm, for example. Position information of reticle stage RST from reticle interferometer 16 is sent to main controller 20. Main controller 20 drives reticle stage RST via reticle stage drive system 11 (see FIG. 6) based on position information of reticle stage RST.

  The projection optical system PL is arranged below the reticle stage RST, and the direction of the optical axis AX (coincidence with the optical axis IX of the illumination optical system) is the Z-axis direction. Here, the both sides are telecentric optical arrangement. A refractive optical system comprising a plurality of lens elements arranged at a predetermined interval along the optical axis AX direction is used. The projection optical system PL is a reduction optical system having a predetermined projection magnification, for example, 1/5 (or 1/4). For this reason, when the illumination area IAR of the reticle R is illuminated by the illumination light from the illumination system 10, the circuit pattern in the illumination area IAR of the reticle R is projected via the projection optical system PL by the illumination light that has passed through the reticle R. The reduced image (partially inverted image) is formed in the exposure area IA conjugate to the illumination area IAR on the wafer W whose surface is coated with the photoresist.

  As shown in FIG. 1, the substrate stage device 30 includes a base plate 12, a surface plate 21 disposed on the base plate 12, and a surface plate drive system 68 that drives the surface plate 21 on the base plate 12 (see FIG. 6). ), A substrate stage WST disposed on the surface plate 21, a stage drive system (planar motor) 50 (see FIG. 6) for driving the substrate stage WST on the surface plate 21, and compressed air for supplying compressed air around the substrate stage WST. A supply device 80 (see FIG. 6) and the like are provided.

  The base board 12 is supported substantially horizontally (parallel to the XY plane) on the floor surface F via an anti-vibration mechanism (not shown). On the upper surface side of the base board 12, a coil unit (not shown) including a plurality of coils arranged in a matrix with the XY two-dimensional direction as the row direction and the column direction is accommodated.

  The surface plate 21 is supported on the base plate 12 via an air bearing (not shown). The bottom of the surface plate 21 is composed of a plurality of permanent magnets and yokes arranged in a matrix with the XY two-dimensional direction as the row direction and the column direction corresponding to the coil unit housed on the upper surface side of the base plate 12. A magnet unit (not shown) is accommodated. Further, a stator 60 described later is accommodated in the upper part of the surface plate 21.

  From the above-described coil unit (not shown) in the base board 12 and magnet unit (not shown) in the surface plate 21, for example, a Lorentz electromagnetic force drive system disclosed in US Patent Application Publication No. 2003/0085676, etc. A platen drive system 68 (see FIG. 6) composed of a flat motor is constructed. The surface plate drive system 68 drives the surface plate 21 on the base plate 12 in directions of three degrees of freedom (X, Y, θz) in the XY plane.

  The position information of the surface plate 21 in the three-degree-of-freedom direction is measured by a surface plate position measurement system 69 (see FIG. 6) composed of, for example, an interferometer or an encoder. The output of the surface plate position measurement system 69 is supplied to the main controller 20 (see FIG. 6). The main control device 20 controls the magnitude and direction of the current supplied to each coil constituting the coil unit of the surface plate drive system 68 based on the output of the surface plate position measurement system 69, and the XY plane of the surface plate 21. The position in the direction of three degrees of freedom is controlled. When the surface plate 21 functions as a counter mass, the main controller 20 drives the surface plate 21 so that the amount of movement of the surface plate 21 from the reference position is within a predetermined range. That is, the surface plate drive system 68 is used as a trim motor.

  As will be described later, substrate stage WST includes mover 51, support mechanisms 32a, 32b, and 32c, substrate table 18 and the like. A planar motor including a stator 60 accommodated in the upper part of the surface plate 21 and a movable element 51 fixed to the bottom (base facing surface side) of the substrate stage WST is used as the stage drive system 50. Hereinafter, the stage drive system 50 is referred to as a planar motor 50 for convenience.

  A wafer W is fixed on the substrate table 18 by, for example, vacuum suction. A movable mirror 27 that reflects a laser beam from a wafer laser interferometer (hereinafter referred to as “wafer interferometer”) 31 is fixed on the substrate table 18, and the substrate table 18 is arranged by the wafer interferometer 31 arranged outside. Is always detected with a resolution of about 0.5 to 1 nm, for example. In practice, as shown in FIG. 3, the movable mirror 27Y having a reflecting surface orthogonal to the Y-axis direction that is the scanning direction is orthogonal to the X-axis direction that is the non-scanning direction. A moving mirror 27X having a reflecting surface is provided, and the wafer interferometer 31 is provided with one axis in the scanning direction and two axes in the non-scanning direction. In FIG. A total of 31 is shown. The position information (or speed information) of the substrate table 18 is sent to the main controller 20. Main controller 20 controls movement of substrate stage WST in the XY plane via planar motor 50 based on the position information (or speed information).

  The components of the substrate stage WST, particularly the planar motor 50 will be described in detail.

  FIG. 2 shows a plan view of the substrate stage device 30. FIG. 3 is an enlarged view of a cross-sectional view taken along line AA of FIG. As shown in FIGS. 2 and 3, the substrate table 18 includes a support mechanism 32 a including a voice coil motor and the like on the upper surface (surface opposite to the surface facing the surface plate 21) of the mover 51 constituting the planar motor 50. It is supported at three different points depending on 32b and 32c, and can be tilted and driven in the Z-axis direction with respect to the XY plane. The support mechanisms 32a to 32c are independently controlled by the main controller 20 (see FIG. 6).

  The mover 51 includes an air slider 57 that is a kind of aerostatic bearing device, a flat plate-like magnet generator 53 that is partly fitted and integrated with the air slider 57 from above, and a plate-like magnet generator 53. And a magnetic member 52 made of a magnetic material engaged from above. The flat magnet generator 53 is composed of a plurality of flat magnets arranged in a matrix so that the polarities of adjacent magnetic pole faces are different from each other, and constitutes a magnet unit together with the magnetic member 52. The substrate stage WST is levitated and supported on the upper surface of the surface plate 21 by an air slider 57 via a clearance of about 5 μm, for example (see FIGS. 1 and 3).

  As shown in FIG. 3, the surface plate 21 includes a hollow main body 35 whose upper surface is open, and a ceramic plate 36 that closes the opening of the main body 35. On the surface (upper surface) of the ceramic plate 36 facing the mover 51, a moving surface 21a of the mover 51 is formed. The moving surface 21a is covered with a porous cover 21b having a number of holes with a slight gap 21c. The compressed air is supplied to the gap 21c by a compressed air supply device 80 described later.

  In the internal space 41 of the surface plate 21 formed by the main body 35 and the ceramic plate 36, 9 × 9 = 81 armature coils in a matrix of 9 rows and 9 columns in the XY two-dimensional direction along the moving surface 21a. 38 is arranged (see FIG. 2). As the armature coil 38, a square coil is used as shown in FIG. These armature coils 38 constitute a stator 60 of the planar motor 50. In addition, the magnitude | size and direction of the electric current supplied to each armature coil 38 are controlled by the main controller 20 (refer FIG. 6).

  On the opposite side (lower surface side) of the moving surface 21a of the ceramic plate 36, as shown in FIG. 3, a large number of protrusions 36a having a circular cross section are formed at predetermined intervals. As shown in FIG. 2, when the ceramic plate 36 is assembled to the main body 35, the protrusions 36 a are 8 × 8 = 64 at positions corresponding to the spaces between the four adjacent armature coils 38. Is provided.

  The compressed air supply device 80 will be described.

As schematically shown in FIG. 4, the compressed air supply device 80 includes a pressure reducing valve (regulator) R 1, a temperature stabilizing element (heat sink) HS, a flow rate adjusting valve F 1, and a flow path 81. Compressed air supply device 80, by means of a pump a, factory for force (air), and sends the pressure reducing valve R1 at high pressure _{P 0} from the outside the exposure apparatus 100 (the surface plate 21) via the flow path 81. Here, the pressure P ₀ and the temperature T ₀ of the factory power (air) sent to the pressure reducing valve R1 vary.

5A and 5B show changes in air pressure and temperature in the compressed air supply device 80 with respect to the position x in the flow path 81, respectively. In the pump a (hereinafter also referred to as the inlet a of the flow path 81), the air has a high pressure P ₀ (for example, 0.5 to 0.9 MPa) and a high temperature T ₀ .

The pressure reducing valve R1 regulates the high-pressure P ₀ air to a desired pressure P ₁ . At this time, the temperature of the air drops to T ₀₁ due to adiabatic expansion. The pressure P ₁ is set when the exposure apparatus 100 is started, adjusted, or the like. Since the air temperature T ₀ at the inlet a of the flow path 81 varies, the temperature T ₀₁ at the outlet of the pressure reducing valve R1 also varies. The air regulated by the pressure reducing valve R1 is sent to the temperature stabilizing element HS via the flow path 81.

The temperature stabilizing element HS (heat sink) has two flow paths provided substantially in parallel in a metal plate made of copper, stainless steel, or Al, and one of them is a refrigerant adjusted to a temperature T ₁ (for example, cooling water) flowing by the other to be connected to the flow path 81 flowing air indeterminate temperature T ₀₁ from the pressure reducing valve R1, a certain temperature T ₁ of two temperature adjustment to dissipate the heat of air. The temperature stabilizing element is not limited to the heat sink. Other means such as a radiator or a superheater can be used as long as the temperature can be maintained at a substantially predetermined temperature. Temperatures T ₁ is at the start of the exposure apparatus 100 is set in the adjustment or the like. Here, the pressure of the air is adjusted in pressure by the pressure reducing valve R1, it does not vary as P _0, that is, the fixed value pressure P ₁ does not vary. Incidentally, as shown using dashed lines in FIG. 5 in (B), in the case where the temperature T ₀₁ of the air from the pressure reducing valve R1 is lower than the temperature T ₁ of the refrigerant, the air is heated constant temperature T ₁ of two tempering Will be. The air adjusted by the temperature stabilizing element HS is sent to the flow rate adjusting valve F1 through the flow path 81.

Flow control valve F1 is supplied to the pressure reducing valve R1 and temperature stabilization element HS by the pressure P ₁ and temperature T ₁ of two tone圧及beauty tempered the surface of the plate 21 air at a predetermined flow rate (in the gap 21c) To do. Here, since the air adiabatically expands from the temperature stabilizing element HS (more precisely, the pressure reducing valve R1) to the outlet b of the flow path 81, as shown in FIGS. 5 (A) and 5 (B). In addition, the pressurized air is reduced to P ₂ (atmospheric pressure (1 atm in FIG. 5A)) by the outlet b and is lowered to the temperature T ₂ .

Note that in the compressed air supply device 80, the pressure P ₂ is set to the atmospheric pressure (1 atm) or more higher. The air from the compressed air supply device 80 is also called compressed air. Also, temperature T ₂ is set to a set temperature of the exposure apparatus 100 (e.g., room temperature 23 °) or lower than.

Compressed air supply device 80, flow control valve F1 by the feed to the desired temperature T ₂ two temperature had been adjusted pressure to and through the passage 81 in the exposure apparatus 100, via a pipe (not shown) in the platen 21, white As indicated by the extraction arrow, the sheet is supplied into the gap 21c between the moving surface 21a on the surface plate 21 and the porous cover 21b. The compressed air spreads widely on the surface (moving surface 21a) of the surface plate 21 by the porous cover 21b, and is blown up onto the surface plate 21 through a large number of holes of the porous cover 21b. In addition, not only the porous cover 21b but other members may be used as long as the temperature-controlled compressed air flows in the gap 21c and the temperature change of the atmosphere on the surface plate 21 is eliminated.

In order to drive the substrate stage WST, a current is supplied to each of the armature coils 38 in the surface plate 21 immediately below the substrate stage WST. Therefore, the armature coil 38 generates heat, the gas (air) around the substrate stage WST on the surface plate 21 is heated, and the gas fluctuates. However, the compressed air supplied by the compressed air supply device 80 is supplied in a wide range in the gap 21c and blown up onto the surface plate 21 through a large number of holes of the porous cover 21b, whereby the heat of the armature coil 38 is increased. There is waste heat, the atmosphere over the platen 21 is maintained at a constant temperature T _2, so that the temperature variations around the gas is also suppressed.

  FIG. 6 shows the main configuration of the control system of the exposure apparatus 100. The control system is mainly configured of a main controller 20 including a microcomputer (or workstation) that performs overall control of the entire apparatus.

  Next, the flow of the exposure operation in the exposure apparatus 100 including the substrate stage apparatus 30 described above will be briefly described.

  First, under the control of the main controller 20, reticle loading and wafer loading are performed by a reticle loader and a wafer loader (both not shown), respectively, and a reference mark plate (not shown) on the reticle alignment detection system 13 and the substrate table 18 is used. The preparatory work such as reticle alignment and baseline measurement is performed according to a predetermined procedure using the alignment detection system AS.

  Thereafter, alignment measurement such as EGA (Enhanced Global Alignment) is performed by main controller 20 using alignment detection system AS.

  After the alignment measurement is completed, a step-and-scan exposure operation is performed as follows. In the exposure operation, first, the substrate table 18 is moved so that the XY position of the wafer W becomes the scanning start position for the exposure of the first shot region (first shot) on the wafer W. At the same time, the reticle stage RST is moved so that the XY position of the reticle R becomes the scanning start position. Then, based on the XY position information of the reticle R measured by the reticle interferometer 16 and the XY position information of the wafer W measured by the wafer interferometer 31, the main controller 20 performs a reticle driving unit (not shown) and a planar motor. Scanning exposure is performed by moving the reticle R and the wafer W synchronously via the lens 50. The movement of the wafer W is performed by controlling at least one of the current value supplied to the armature coil 38 and the current direction by the main controller 20.

  In this way, when the transfer of the reticle pattern for one shot area is completed, the substrate table 18 is stepped by one shot area, and scanning exposure is performed for the next shot area. In this way, stepping and scanning exposure are sequentially repeated, and a pattern having the required number of shots is transferred onto the wafer W.

As described above, by providing the compressed air supply device 80 of the present embodiment, the exposure apparatus 100 (the surface plate 21) outside air, a pressure reducing valve R1 and temperature stabilization element via the HS predetermined temperature T ₂ two adjustment It is heated and supplied onto the surface of the surface plate 21 (in the gap 21c between the porous cover 21b). Thus, the heat is waste heat of the armature coils 38 constituting the planar motor 50, the atmosphere on the surface plate 21 is always maintained at a constant temperature T _2, so that the temperature variations around the gas is suppressed . And the high position measurement accuracy of the wafer interferometer 31 configured using the interferometer can be maintained, the positioning accuracy of the wafer W (substrate stage WST) can be improved and the throughput can be improved.

Note that, as in the modification shown in FIG. 7, the compressed air supply device 80 ′ can be configured by using the pressure reducing valve R <b> 2 instead of the flow rate adjusting valve F <b> 1 in the compressed air supply device 80 of FIG. 4. In such a case, the air (pressure air) regulated and adjusted to the pressure P ₁ and the temperature T ₁ by the pressure reducing valve R1 and the temperature stabilizing element HS is sent to the pressure reducing valve R2 via the flow path 81, Further, the pressure is reduced (adiabatic expansion). Thus, as shown in FIG. 8 (A) and FIG. 8 (B), the air is desired temperature T ₂ two temperature control is with the pressure constant pressure P ₂ two tone. In the compressed air supply device 80 ′ having this configuration, the temperature T ₂ of the compressed air supplied onto the surface of the surface plate 21 can be easily changed by adjusting the air pressure P ₂ using the pressure reducing valve R2. .

  A temperature sensor (not shown) may be provided in the outlet b or the gap 21c of the flow path 81, and the temperature of the compressed air may be measured using the temperature sensor. The compressed air supply device 80 controls the flow rate adjustment valve F1 based on the measurement result of the temperature sensor to adjust the pressure of the compressed air (or by controlling the pressure reducing valve R2 in the modified example). Control the flow rate on the surface. Alternatively, the temperature of the compressed air on the surface of the surface plate 21 can be adjusted by controlling the flow rate, that is, the temperature can be increased (decreased) by increasing (decreasing) the flow rate of the compressed air.

Further, the compressed air supplying device 80, for temperature control has been pressure to exhaust heat of the heat of the armature coils 38 constituting the planar motor 50, expected that the temperature T of the atmosphere above the surface plate 21 is higher than T ₂ Is done. A case, so that the temperature T becomes the set temperature of the exposure apparatus 100 (e.g., room temperature 23 °), may be set the temperature T _2.

  In the above-described embodiment, the case where the present invention is applied to a dry type exposure apparatus that exposes the wafer W without using liquid (water) has been described. No. 99/49504, European Patent Application Publication No. 1,420,298, International Publication No. 2004/055803, US Pat. No. 6,952,253, etc. The present invention can also be applied to an exposure apparatus that forms an immersion space including an optical path of illumination light between the wafer and the wafer, and exposes the wafer with illumination light through the projection optical system and the liquid in the immersion space. . The present invention can also be applied to an immersion exposure apparatus disclosed in, for example, International Publication No. 2007/097379 (corresponding to US Patent Application Publication No. 2008/0088843).

  In the above embodiment, the case where the present invention is applied to a scanning exposure apparatus such as a step-and-scan method has been described. However, the present invention is not limited to this, and the present invention is applied to a stationary exposure apparatus such as a stepper. May be. The present invention can also be applied to a step-and-stitch reduction projection exposure apparatus, a proximity exposure apparatus, or a mirror projection aligner that synthesizes a shot area and a shot area. Further, as disclosed in, for example, US Pat. No. 6,590,634, US Pat. No. 5,969,441, US Pat. No. 6,208,407, etc. The present invention can also be applied to a multi-stage type exposure apparatus provided with a stage. Further, as disclosed in, for example, International Publication No. 2005/0774014, the present invention is also applied to an exposure apparatus having a measurement stage including a measurement member (for example, a reference mark and / or a sensor) separately from the wafer stage. The invention is applicable.

  Further, the projection optical system in the exposure apparatus of the above embodiment may be not only a reduction system but also any of the same magnification and enlargement systems, and the projection optical system PL may be any of a reflection system and a catadioptric system as well as a refraction system. The projected image may be either an inverted image or an erect image. In addition, the illumination area and the exposure area described above are rectangular in shape, but the shape is not limited to this, and may be, for example, an arc, a trapezoid, or a parallelogram.

The light source of the exposure apparatus of the above embodiment is not limited to the ArF excimer laser, but is a KrF excimer laser (output wavelength 248 nm), F ₂ laser (output wavelength 157 nm), Ar ₂ laser (output wavelength 126 nm), Kr ₂ laser ( It is also possible to use a pulse laser light source with an output wavelength of 146 nm, an ultrahigh pressure mercury lamp that emits a bright line such as g-line (wavelength 436 nm), i-line (wavelength 365 nm), and the like. A harmonic generator of a YAG laser or the like can also be used. In addition, as disclosed in, for example, US Pat. No. 7,023,610, a single wavelength laser beam in an infrared region or a visible region oscillated from a DFB semiconductor laser or a fiber laser is used as vacuum ultraviolet light. For example, a harmonic that is amplified by a fiber amplifier doped with erbium (or both erbium and ytterbium) and wavelength-converted into ultraviolet light using a nonlinear optical crystal may be used.

  In the above embodiment, it is needless to say that the illumination light IL of the exposure apparatus is not limited to light having a wavelength of 100 nm or more, and light having a wavelength of less than 100 nm may be used. For example, the present invention can be applied to an EUV exposure apparatus that uses EUV (Extreme Ultraviolet) light in a soft X-ray region (for example, a wavelength region of 5 to 15 nm). In addition, the present invention can be applied to an exposure apparatus using a charged particle beam such as an electron beam or an ion beam.

  Further, as disclosed in, for example, US Pat. No. 6,611,316, two reticle patterns are synthesized on a wafer via a projection optical system, and 1 on the wafer by one scan exposure. The present invention can also be applied to an exposure apparatus that double exposes two shot areas almost simultaneously.

  In the above embodiment, the object on which the pattern is to be formed (the object to be exposed to which the energy beam is irradiated) is not limited to the wafer, but may be another object such as a glass plate, a ceramic substrate, a film member, or a mask blank. good.

  The use of the exposure apparatus is not limited to the exposure apparatus for semiconductor manufacturing, but for example, an exposure apparatus for liquid crystal that transfers a liquid crystal display element pattern to a square glass plate, an organic EL, a thin film magnetic head, an image sensor (CCD, etc.), micromachines, DNA chips and the like can also be widely applied to exposure apparatuses. Further, in order to manufacture reticles or masks used in not only microdevices such as semiconductor elements but also light exposure apparatuses, EUV exposure apparatuses, X-ray exposure apparatuses, electron beam exposure apparatuses, etc., glass substrates or silicon wafers, etc. The present invention can also be applied to an exposure apparatus that transfers a circuit pattern.

  An electronic device such as a semiconductor element includes a step of designing a function / performance of the device, a step of manufacturing a reticle based on the design step, a step of manufacturing a wafer from a silicon material, and the exposure apparatus (pattern forming apparatus) of the above-described embodiment. And a lithography step for transferring the mask (reticle) pattern to the wafer by the exposure method, a development step for developing the exposed wafer, and an etching step for removing the exposed member other than the portion where the resist remains by etching, It is manufactured through a resist removal step for removing a resist that has become unnecessary after etching, a device assembly step (including a dicing process, a bonding process, and a packaging process), an inspection step, and the like. In this case, in the lithography step, the exposure method described above is executed using the exposure apparatus of the above embodiment, and a device pattern is formed on the wafer. Therefore, a highly integrated device can be manufactured with high productivity.

  DESCRIPTION OF SYMBOLS 12 ... Base board, 21 ... Surface plate, 30 ... Substrate stage apparatus, 38 ... Armature coil, 41 ... Internal space, 50 ... Stage drive system (planar motor), 80 ... Pressure air supply apparatus, 100 ... Exposure apparatus, F1 ... Flow control valve, HS ... temperature stabilizing element (heat sink), R1, R2 ... pressure reducing valve (regulator), W ... wafer.

Claims (5)

A moving object that moves on the surface plate;
A driving device including a stator including a plurality of coil units arranged in the surface plate and a mover including at least one magnet unit provided in the movable body;
The gas outside the platen is adjusted to a predetermined pressure via a pressure reducing valve, the gas via the pressure reducing valve is adjusted to a predetermined temperature via a temperature stabilizing element, and the gas via the temperature stabilizing element is adjusted. A gas supply device that supplies gas onto a surface of the surface plate that faces the moving body. A porous cover is disposed on the surface of the surface plate,
The mobile device according to claim 1, wherein the gas supply device supplies the gas to a gap between the surface and the porous cover.   The gas supply device further adjusts the flow rate of the gas on the surface via at least one of another pressure reducing valve and a flow rate adjusting valve for the gas via the temperature stabilizing element. Or the mobile body apparatus of 2.   The gas supply device includes a temperature sensor that measures the temperature of the gas on the surface, and controls at least one of the another pressure reducing valve and the flow rate adjusting valve based on a measurement result of the temperature sensor. The mobile device according to claim 3. An exposure apparatus that irradiates an energy beam to form a pattern on an object,
An exposure apparatus comprising the movable body apparatus according to claim 1, wherein the movable body that holds the object is driven.

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