JP2013098004A - Vacuum processor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To easily and accurately perform mutual positioning of a discharge chamber and a converter with a simple and inexpensive configuration and to efficiently perform high quality vacuum processing by eliminating an adverse effect due to heat expansion of the discharge chamber.SOLUTION: A film forming device 1 has a process chamber 1 composed of a ridge waveguide housed inside a decompression container 4, and converters 3A, 3B connected to the process chamber 2 through vacuum windows 15 provided in the decompression container 4, from the outside of the decompression container 4. Both surfaces of the vacuum windows 15 are provided with guide plates 51, 52 for positioning a container of the process chamber 2 and containers of the converters 3A, 3B at a home position with respect to the vacuum windows 15. The guide plates 51, 51 on both surfaces of the vacuum windows 15 are also shared as a conductive reflection wave reduction member for relaxing a sudden change in impedances between the process chamber 2 and the vacuum windows 15, and between the converters 3A, 3B and the vacuum windows 15.

Description

  The present invention relates to a vacuum processing apparatus, and more particularly to a vacuum processing apparatus that performs processing on a substrate using plasma in a vacuum.

  Generally, in order to improve the productivity of a thin film solar cell, it is important to form a high-quality silicon thin film at a high speed and in a large area. As a method for performing such high-speed and large-area film formation, a film formation method by plasma CVD (chemical vapor deposition) is known.

  In order to perform film formation by the plasma CVD method, a plasma generation apparatus (vacuum processing apparatus) that generates plasma is necessary, and a plasma generation apparatus that efficiently forms a film is disclosed in Patent Documents 1 and 2, for example. There is known a plasma generation apparatus using a ridge waveguide. As shown in FIG. 10 of Patent Document 1, this type of plasma generation apparatus includes a pair of left and right converters (distribution chambers) that convert a high-frequency power source (RF power source) into a strong electric field, and these converters. And a discharge chamber (process chamber) to be connected.

  The converter includes a ridge waveguide having a pair of upper and lower flat ridges facing each other. The discharge chamber is also a ridge waveguide having a pair of upper and lower flat ridge electrode plates facing each other, and is connected to a converter. In the plasma generating apparatus configured as described above, when the inside of the discharge chamber is depressurized, the mother gas necessary for generating the plasma and forming the thin film is supplied into the discharge chamber, and when high frequency power is supplied from the power source, Plasma can be generated between the ridge electrode plates facing each other. Then, a film forming process can be performed on a glass substrate or the like using this plasma. In general, the substrate on which the film forming process is performed is disposed between the ridge electrode plates in the discharge chamber. Specifically, the entire apparatus is installed so that the upper and lower ridge electrodes are horizontal, and the substrate is carried between the upper and lower electrodes or outside the upper and lower electrodes, and this substrate is placed on the upper surface of the lower ridge electrode. The film is formed by placing.

  In such a plasma generation device, in order to depressurize the inside of the discharge chamber, the entire plasma generation device using a ridge waveguide has been conventionally housed in the decompression vessel. However, there is a problem that the plasma generation apparatus and the vacuum evacuation system are increased in size, and the production and management of the plasma generation apparatus and the securing of a wide installation place are expensive.

  Therefore, as disclosed in FIG. 11 of Patent Document 2, only the discharge chamber of the plasma generation device is accommodated in a decompression vessel, and a converter is connected to both sides of the decompression vessel via a vacuum window. Is placed in the atmospheric pressure. In this case, a dielectric such as quartz glass or alumina ceramic that can transmit electromagnetic waves is used as the material of the vacuum window, and high-frequency power transmission and vacuum shielding are performed through the vacuum window. Since the pressure difference applied to the inside and outside of the decompression vessel and a high thermal load during discharge are applied to the vacuum window, the vacuum of the decompression vessel containing a large discharge chamber capable of processing a substrate having an area exceeding 1 square meter in particular. The window has a thickness of several tens of millimeters that can ensure strength without breakage.

Japanese National Patent Publication No. 4-504640 JP 2011-35327 A

  However, when the substrate area exceeds 1 square meter and the substrate becomes larger, a large plasma generation apparatus (vacuum processing apparatus) capable of performing plasma film formation processing becomes a converter with the vacuum window interposed therebetween. When connecting the discharge chamber to the discharge chamber, deformation due to the pressure difference between the vacuum and atmospheric pressure and thermal expansion due to the temperature difference tend to cause misalignment between the converter and the discharge chamber, maintaining their mutual position. It becomes difficult to do. If the positions of the two are shifted, there is a problem that the transmission loss of high-frequency power and the electric field distribution in the discharge chamber (process chamber) become non-uniform, and the processing quality such as film formation on the substrate deteriorates. In addition, in order to accurately position and connect the enlarged transducer and the discharge chamber, it is necessary to use special jigs and measuring instruments. This reduces the productivity and yield of the substrate.

In addition, since the converter and the discharge chamber are fixed so that they abut against the vacuum window, there is a possibility that pressure deformation or a gap may occur between the vacuum window due to thermal expansion of each part. As described above, there is a concern that the transmission loss of the high-frequency power is generated or the electric field distribution becomes non-uniform, and the quality of the plasma processing of the substrate or the like is deteriorated. In addition, the discharge chamber (process chamber) may become a high temperature of 200 ° C. or higher depending on the process conditions, and there is a tendency that the above-mentioned problems and concerns are promoted by the thermal deformation of the large component (eg, 1000 mm). When there is a temperature difference of 100 ° C. between the long SUS304 material and the alumina material, thermal expansion difference = thermal expansion coefficient difference ((16−7) × 10 ⁻⁶ ) × temperature difference (100 ° C.) × 1000 = 0.9 mm, resulting in a displacement and gap of about 1 mm).

Moreover, as described above, the vacuum window needs to have a thickness that can sufficiently withstand the pressure difference between the vacuum and the atmospheric pressure. However, on the other hand, as the thickness of the vacuum window increases, the temperature difference in the thickness direction increases due to heat generation due to dielectric loss (dielectric loss tangent tan δ). Will occur. (Example: dielectric loss generates heat due to internal friction of molecules and polar groups in the dielectric, and is expressed by calorific value Q = kfE ² ε tan δ (k: constant, f: frequency, E: electric field, ε: Dielectric constant, tan δ: dielectric loss tangent).

  The present invention has been made in order to solve the above-described problems. A discharge chamber is accommodated in a decompression vessel, and a converter provided outside the decompression vessel is provided via a vacuum window provided in the decompression vessel. In the vacuum processing apparatus configured to be connected to the discharge chamber, the simple and inexpensive configuration allows easy and accurate positioning of the discharge chamber and the transducer, and eliminates adverse effects due to thermal expansion of the discharge chamber, It aims at providing the vacuum processing apparatus which can perform high quality vacuum processing efficiently.

In order to solve the above problems, the present invention employs the following means.
That is, the first aspect of the vacuum processing apparatus according to the present invention includes a discharge chamber composed of a ridge waveguide having a pair of planar ridge electrodes that are arranged in parallel to each other and discharge between them. The ridge waveguide having a pair of flat plate-shaped ridge portions disposed on both sides of the discharge chamber and facing each other in parallel, and transmitting high-frequency power to the discharge chamber, A pair of converters for causing a discharge between the ridge electrodes, and power supply means for supplying high-frequency power to the ridge portion of the converter, wherein the discharge chamber is housed in a decompression vessel, The converter is a vacuum processing apparatus that is disposed outside the decompression vessel and is connected to the discharge chamber and the converter via a vacuum window provided in the decompression vessel, on both sides of the vacuum window, A part of the discharge chamber and a part of the converter, Characterized in that a positioning member for positioning in a fixed position relative to the vacuum window.

  According to the above configuration, the positioning members provided on both surfaces of the vacuum window position the part between the discharge chamber and the vacuum window and between the part of the converter and the vacuum window with high accuracy and reliability. In addition, the discharge chamber container and the converter container can be accurately attached to the vacuum window. This prevents mutual displacement between the converter and the discharge chamber, avoids transmission loss of high-frequency power, makes the electric field distribution in the discharge chamber uniform, and improves the quality of plasma processing such as film formation on the substrate. be able to. In addition, the time required for assembly and maintenance during the maintenance of the vacuum processing apparatus can be shortened, and high-quality plasma processing can be efficiently performed.

  A second aspect of the vacuum processing apparatus according to the present invention is a discharge chamber comprising a ridge waveguide having a pair of planar ridge electrodes that are arranged in parallel with each other and discharge between them. The ridge waveguide having a pair of flat plate-shaped ridge portions disposed on both sides of the discharge chamber and facing each other in parallel, and transmitting high-frequency power to the discharge chamber, A pair of converters for causing a discharge between the ridge electrodes, and power supply means for supplying high-frequency power to the ridge portion of the converter, wherein the discharge chamber is housed in a decompression vessel, The converter is a vacuum processing apparatus that is disposed outside the decompression vessel and is connected to the discharge chamber and the converter via a vacuum window provided in the decompression vessel, on both sides of the vacuum window, Between the discharge chamber and the vacuum window, and Wherein the exchanger to relax the change in the impedance between the vacuum window, characterized in that a conductivity is reflected wave reduction member.

  According to the above configuration, the impedance tends to change abruptly between the discharge chamber and the vacuum window and between the converter and the vacuum window by the conductive reflected wave reducing members provided on both surfaces of the vacuum window. Is mitigated, and the generation of reflected waves of high-frequency power caused by sudden changes in impedance is suppressed. Therefore, transmission loss of high-frequency power is avoided, electric field distribution in the discharge chamber is made uniform, and modulation or failure of the high-frequency power supply system due to reflected waves is effectively prevented, so that plasma processing such as film formation on the substrate can be performed. Quality can be improved.

  According to a third aspect of the vacuum processing apparatus of the present invention, in the second aspect, the reflected wave reducing member also serves as the positioning member according to claim 1.

  According to the above configuration, since the positioning member attached to the vacuum window and the reflected wave reducing member are common components, the increase in the number of components of the vacuum processing apparatus is reduced, and the discharge chamber and the converter are configured with a simple and inexpensive configuration. Can be easily and accurately positioned relative to each other, and generation of reflected waves between the transducer and the vacuum window and between the vacuum window and the discharge chamber can be reduced.

  According to a fourth aspect of the vacuum processing apparatus of the present invention, in the second or third aspect, the reflected wave reducing member stands up perpendicularly from an inner surface and an outer surface of the vacuum window. It is plate shape along the surrounding surface of the container of the said converter, It is characterized by the above-mentioned.

  According to the above configuration, even if a gap is generated between the discharge chamber and the vacuum window and between the converter and the vacuum window due to, for example, thermal expansion when the discharge chamber is heated or thermal contraction when the temperature is lowered. Since the gap is closed by the reflected wave reducing member, it is possible to avoid transmission loss of high frequency power, to uniform the electric field distribution in the discharge chamber, and to improve the quality of plasma processing such as film formation on the substrate. .

  The fifth aspect of the vacuum processing apparatus according to the present invention is characterized in that, in the fourth aspect, the thickness of the reflected wave reducing member is gradually reduced toward the tip.

  As described above, the vacuum window is a dielectric, and by providing a reflected wave reducing member between the converter and the vacuum window and between the vacuum window and the discharge chamber, the sudden change in impedance in the vacuum window is alleviated. The Here, since the sectional area of the reflected wave reducing member gradually changes by gradually reducing the thickness of the reflected wave reducing member toward the tip, the sudden change in impedance in the vacuum window can be more effectively mitigated. It is possible to further improve the quality of plasma processing such as film formation.

  In addition, in a sixth aspect of the vacuum processing apparatus according to the present invention, in any one of the second to fifth aspects, the base end portion of the reflected wave reducing member is made of the same material as the vacuum window, A support protrusion for supporting the reflected wave reducing member from below is provided, and the thickness of the support protrusion is gradually reduced toward the tip.

  According to the above configuration, since the reflected wave reducing member is supported by the support protrusion formed of the same material as the vacuum window, the support strength of the reflected wave reducing member can be increased. In addition, since the thickness of the support protrusion gradually decreases toward the tip, the tendency of the impedance to change suddenly in the vacuum window can be alleviated, and the quality of plasma processing such as film formation on the substrate can be improved.

  According to a seventh aspect of the vacuum processing apparatus of the present invention, in any one of the first to sixth aspects, the positioning member or the reflected wave reducing member, the container for the discharge chamber, or the container for the converter. A gap is provided between and a conductive elastic member is interposed in the gap.

  According to the above configuration, for example, when the discharge chamber is thermally expanded, the relative position in the connection direction (horizontal direction) between the vacuum window and the discharge chamber, or the connection direction (horizontal direction) between the vacuum window and the converter (horizontal direction). Even if the relative position changes, the reflected wave reducing member provided in the vacuum window and the discharge chamber and the container of the converter are kept electrically connected via a conductive elastic member. It is. As a result, the potential contact between the converter, the positioning member (reflected wave reducing member), the vacuum window, the positioning member (reflected wave reducing member), and the process chamber can be satisfactorily performed, thereby reducing transmission loss. In addition, the non-uniformity of the electric field distribution in the discharge chamber can be suppressed, and the quality of the plasma processing can be improved.

  According to an eighth aspect of the vacuum processing apparatus of the present invention, in any one of the first to seventh aspects, the center portion of the discharge chamber installed inside the decompression vessel is heated in a plan view. Three or more points are defined between the bottom surface of the decompression vessel and the discharge chamber so as to be fixed as a starting point of expansion, fixed on the bottom surface of the decompression vessel via a center fixing portion, and surrounding the center fixing portion in plan view. These slide support portions are capable of absorbing thermal expansion in the horizontal direction of the discharge chamber with respect to the bottom surface of the decompression vessel.

  In general, when the discharge chamber thermally expands due to the temperature rise of the substrate installation part for heating the substrate in the discharge chamber or the temperature rise of the ridge electrode portion due to plasma generation, the discharge chamber is viewed from the center of the discharge chamber in plan view. The dimensions expand radially from the center to the periphery. Therefore, by adopting the above-described configuration, it is possible to maintain a similar shape without restraining the entire discharge chamber by thermal deformation without moving the center position of the discharge chamber even during thermal expansion. As described above, since the central portion of the discharge chamber is determined as the starting point of thermal expansion, for example, non-uniform stress is not concentrated on only one of the vacuum windows provided on both sides of the discharge chamber. Soundness can be maintained. And since the center part of a discharge chamber is fixed to the center part of a pressure reduction container via a center fixing | fixed part, a discharge chamber can be stably fixed in a pressure reduction container.

  According to a ninth aspect of the vacuum processing apparatus of the present invention, in the eighth aspect, the slide support portion absorbs the extension of the discharge chamber in the first direction with respect to the bottom surface of the decompression vessel. 1 slide unit and the 2nd slide unit which absorbs the extension to the 2nd direction orthogonal to the 1st direction are piled up via a horizontal neutral plate, It is characterized by the above-mentioned.

  According to the above configuration, no matter how each part of the discharge chamber expands in the horizontal direction in plan view, this expansion is decomposed into vector components along the first direction or the second direction, The vector component along is absorbed by the first slide unit, and the vector component along the second direction is absorbed by the second slide unit. For this reason, it is possible to smoothly absorb the thermal expansion of the discharge chamber while keeping each part of the discharge chamber in the horizontal direction and perform a sound operation.

  Further, according to a tenth aspect of the vacuum processing apparatus of the present invention, in the ninth aspect, the vacuum window is attached to the decompression vessel via a seal member provided on a peripheral surface thereof, The vacuum window is slidable in the connecting direction of the discharge chamber and the converter while being kept airtight by the seal member with respect to the decompression vessel.

  According to the above configuration, the vacuum window and the converter can be moved while being fixed in accordance with the elongation due to the thermal expansion of the discharge chamber. As a result, the discharge chamber and the end of the converter can always be kept in close contact with the vacuum window, and a transmission path that is stable in terms of electric field can be secured.

  An eleventh aspect of the vacuum processing apparatus according to the present invention is the connection direction of the discharge chamber and the converter with respect to the decompression vessel in the converter according to any one of the first to tenth aspects. Slidably supported, and has a pressing means for pressing the converter toward the discharge chamber.

  According to the above configuration, even if the discharge chamber is thermally expanded and the dimensions of the container are increased, and the heat shrinks after pressing the vacuum window and the transducer in the direction of separating in the connecting direction, The converter is pushed toward the discharge chamber and returned to its original position. For this reason, a gap is not generated between the discharge chamber, the vacuum window, and the converter, and they can be kept in close contact with each other with a predetermined internal pressure. Therefore, the tolerance for thermal expansion and contraction in the connecting direction is increased, the generation of gaps is prevented, transmission loss of high-frequency power is avoided, the electric field distribution in the discharge chamber is uniformed, and the production to the substrate is performed. It is possible to improve the quality of the plasma processing such as a film.

  According to a twelfth aspect of the vacuum processing apparatus of the present invention, in the eleventh aspect, an adhesion force detection unit is provided between the converter and the discharge chamber, and the pressing unit detects the adhesion force detection. Based on the adhesion information from the means, even if the discharge chamber is thermally expanded, no load is applied to the vacuum window, and an adhesion force that does not generate a gap between the discharge chamber, the vacuum window, and the converter; Thus, the converter is driven in a direction in which the converter is separated from the discharge chamber.

  According to the above configuration, the contact force detected by the contact force detection unit changes according to the dimensional change amount of the container due to the thermal expansion of the discharge chamber, and the pressing unit in the connecting direction is driven based on the contact force information. The vacuum window is not subjected to a load, and an adhesion force that does not generate a gap between the discharge chamber, the vacuum window, and the converter is applied. That is, when the discharge chamber expands, the converter is driven in a direction away from the discharge chamber in the connecting direction, and when the discharge chamber contracts, the converter is driven in the connecting direction in a direction approaching the discharge chamber. For this reason, the discharge chamber and the end of the converter are always kept in close contact with the vacuum window, and a high-quality plasma treatment can be performed while ensuring a stable transmission path in terms of electric field.

  In addition, in a thirteenth aspect of the vacuum processing apparatus according to the present invention, in any one of the first to twelfth aspects, the vacuum window is attached to the decompression vessel via a seal member, and the vacuum window A flange member that presses the periphery in a direction in which the seal member is compressed is provided, and a support portion of the converter is integrally provided on the flange member.

  According to the above configuration, the vacuum window is hermetically fixed to the decompression container by the flange member, and at the same time, the converter connected to the vacuum window is supported by the support portion provided on the flange member. For this reason, it can reduce that the weight of a converter becomes a load and puts a burden on a vacuum window, and can damage it, and can maintain the soundness of a vacuum processing apparatus.

  As described above, according to the present invention, the discharge chamber is accommodated in the decompression vessel, and the converter provided outside the decompression vessel is connected to the discharge chamber via the vacuum window provided in the decompression vessel. With a simple and inexpensive configuration, the discharge chamber and converter can be positioned easily and accurately, and the adverse effects of thermal expansion of the discharge chamber are eliminated, making high-quality vacuum processing efficient. Can be done well.

It is a longitudinal cross-sectional view explaining schematic structure of the double ridge type film forming apparatus which concerns on this invention. It is a longitudinal cross-sectional view of the film forming apparatus which follows the II-II line of FIG. It is a perspective view which shows a vacuum window and a guide plate. It is a longitudinal cross-sectional view which follows the IV-IV line of FIG. It is a longitudinal cross-sectional view which shows the state before a discharge chamber and a converter are attached to a vacuum window. It is a longitudinal cross-sectional view which shows the state after the discharge chamber and the converter were attached to the vacuum window. It is a longitudinal cross-sectional view which shows the Example provided so that a guide plate might contact the discharge chamber and the outer peripheral side of a converter. It is the figure which showed the effect by having provided the guide plate with the graph. It is the IX section enlarged view of FIG. It is a longitudinal cross-sectional view which shows the Example provided with the support protrusion with the guide plate. It is a longitudinal cross-sectional view which shows the Example provided with the electroconductive elastic member with the guide plate. It is the XII section enlarged view of FIG. It is a longitudinal cross-sectional view of the film forming apparatus which follows the XIII-XIII line of FIG. 15 and FIG. It is a longitudinal cross-sectional view of the film forming apparatus which follows the XIV-XIV line of FIG. 15 and FIG. It is a top view of the film forming apparatus by the XV-XV arrow of FIG. It is a top view of the film forming apparatus by the XVI-XVI arrow view of FIG. It is a longitudinal cross-sectional view which shows the sliding structure of the vacuum window with respect to a pressure reduction container. It is a side view which shows the 1st Example of the slide structure of the converter with respect to a pressure reduction container. It is a side view which shows the 2nd Example of the slide structure of the converter with respect to a pressure reduction container.

[First Embodiment]
First, a first embodiment of the present invention will be described with reference to FIGS. FIG. 1 is a schematic perspective view illustrating a schematic configuration of a film forming apparatus according to a first embodiment of the present invention, and FIG. 2 is a longitudinal sectional view of the film forming apparatus taken along line II-II in FIG. .

  The film forming apparatus 1 includes a process chamber (discharge chamber) 2, converters 3A and 3B arranged adjacent to both ends of the process chamber 2, a decompression vessel 4 in which the process chamber 2 is accommodated, a converter Coaxial cables 5A and 5B as power lines connected at one end to 3A and 3B, high-frequency power supplies 6A and 6B (power supply means) connected to the other ends of these coaxial cables 5A and 5B, and coaxial cables 5A and 5B Matching units 7A and 7B and circulators 8A and 8B connected to the middle part of FIG. 1, exhaust means 11, and mother gas supply means 12 for supplying a mother gas containing a material gas into the process chamber 2 are main components. I have.

  In this embodiment, for convenience of explanation, the direction (length direction) in which the process chamber 2 extends is defined as the L direction (left and right direction in FIG. 1), and the width direction (left and right direction in FIG. 2) of the process chamber 2 is defined as the H direction. And the height direction of the process chamber 2 is the E direction.

  The decompression container 4 in which the process chamber 2 is accommodated has a box shape. The decompression vessel 4 has a structure that can withstand a pressure difference between the inside and the outside. For example, the structure formed from stainless steel (SUS material in JIS standard), the rolling material for general structures (SS material in JIS standard), etc., and reinforced with a rib material etc. can be used. Furthermore, the vacuum window 15 is installed in the both end surfaces (surface orthogonal to the L direction) of the pressure reduction container 4. The process chamber 2 can perform plasma processing (film formation processing) on a large substrate exceeding 1 square meter (not shown). For this reason, the decompression vessel 4 is also sized to accommodate the process chamber 2 in which a large substrate is installed, and vacuum windows 15 are provided on both end faces thereof. The vacuum window 15 is made of a material capable of transmitting high-frequency power while keeping the inside of the decompression vessel 4 in a vacuum state, and has a large plate-like quartz glass or alumina having a length in the H direction exceeding 1 meter and a thickness of several centimeters. It is formed of a dielectric material such as ceramics and is hermetically attached to a metal part constituting the decompression vessel 4 as will be described later.

  The process chamber 2 is installed on the inner bottom surface of the decompression vessel 4 via a center fixing portion 17 and a plurality of slide support portions 18A, 18B, 18C. Accordingly, the bottom surface of the process chamber 2 is separated from the bottom surface of the decompression vessel 4 in the E direction, and the top surface and the side surface of the process chamber 2 are also separated from the inner surface of the decompression vessel 4. Further, both end surfaces of the process chamber 2 are in contact with inner surfaces of the vacuum windows 15 on both end surfaces of the decompression vessel 4 and are positioned and fixed by using guide plates 51 described later. On the other hand, the converters 3A and 3B are arranged outside the decompression vessel 4, and are fixed to the outer surfaces of the vacuum windows 15 at both ends of the decompression vessel 4 by being positioned using guide plates 52 described later. . Therefore, the process chamber 2 and the converters 3 </ b> A and 3 </ b> B are connected via the vacuum window 15 in the L direction, which is the connection direction.

  A known vacuum pump or the like can be used as the exhaust means 11 and is not particularly limited in the present invention. The exhaust means 11 is connected to the decompression vessel 4 so that the internal pressures of the decompression vessel 4 and the process chamber 2 can be in a vacuum state of about 0.01 Pa to 10 kPa. Since this negative pressure does not reach the converters 3A and 3B isolated from the process chamber 2 by the vacuum window 15, the insides of the converters 3A and 3B are maintained at atmospheric pressure.

  The process chamber 2 is a container-like component made of a conductive non-magnetic or weak magnetic material such as a stainless alloy or an aluminum alloy material, and is formed in a so-called double ridge type waveguide tube. It is a thing. Although the inside of the process chamber 2 is in a vacuum state as described above, since it is housed in the decompression vessel 4, it depends on a pressure difference caused by a minute pressure distribution such as a gas flow, a self-load, and a temperature distribution. It is a structure that can withstand thermal stress, and a particularly strong structure is not required because the stress due to the pressure difference is small. Since the pressure difference is small and a rigid structure is not required, the thickness of the plate constituting the process chamber 2 is reduced and the weight is reduced, so that the self-load is reduced and a more rigid structure is not required. . The process chamber 2 is provided with a pair of upper and lower discharge ridge electrodes 21a and 21b overlapping in the E direction. The pair of ridge electrodes 21a and 21b form a ridge shape which is a main part in the process chamber 2 which is a double ridge waveguide, and have a facing interval (ridge electrode interval) of about 3 to 30 mm. It is a flat plate-like portion that is applied and arranged opposite to each other in parallel, and discharge is performed therebetween.

  The ridge electrodes 21a and 21b are formed of a relatively thin metal plate having a thickness of 0.5 mm or more and 3 mm or less. As a material of the ridge electrodes 21a and 21b, it is desirable that the linear expansion coefficient is small and the heat transfer coefficient is high. Specifically, SUS304 or the like is suitable, but an aluminum-based metal having a large linear expansion coefficient and a remarkably large heat transfer coefficient may be used. A pair of non-ridge waveguides 22a and 22b are provided on both sides of the pair of ridge electrodes 21a and 21b in the H direction. The vertical cross-sectional shape of the process chamber 2 is formed in a substantially “H” shape by the upper and lower ridge electrodes 21 a and 21 b and the left and right non-ridge waveguides 22 a and 22 b.

  On the other hand, the converters 3A and 3B are adjacent to both ends of the process chamber 2 along the length direction (L direction) of the process chamber 2 (ridge electrodes 21a and 21b), and are connected via the vacuum window 15 as described above. Similar to the process chamber 2, it is a container-like component made of a conductive non-magnetic or weakly magnetic material such as an aluminum alloy material. It is formed in a tubular shape.

  The converters 3A and 3B are provided with a pair of upper and lower flat ridges 31a and 31b, respectively. The pair of ridge portions 31a and 31b constitute a ridge shape in the converters 3A and 3B, which are double ridge waveguides, and are provided with an opposing interval (ridge interval) of about 50 to 200 millimeters. They are arranged opposite to each other in parallel. A pair of non-ridge waveguides 32a and 32b are provided on both sides of the pair of ridges 31a and 31b. The vertical cross-sectional shapes of the converters 3A and 3B are formed in a substantially “H” shape like the process chamber 2 by the upper and lower ridge portions 31a and 31b and the left and right non-ridge portion waveguides 32a and 32b.

  By the way, the coaxial cables 5A and 5B have an outer conductor 36 and an inner conductor 37. The outer conductor 36 is electrically connected to, for example, the upper ridge portion 31a of the converters 3A and 3B, and the inner conductor 37 is connected to the upper side. The ridge portion 31a and the internal spaces of the converters 3A and 3B are electrically connected to the lower ridge portion 31b. The coaxial cables 5A and 5B guide the high frequency power supplied from the high frequency power supplies 6A and 6B to the converters 3A and 3B, respectively. As the high-frequency power sources 6A and 6B, known ones can be used and are not particularly limited in the present invention.

  The high frequency power supplies 6A and 6B have a frequency of 13.56 MHz or higher, preferably 30 MHz to 400 MHz (VHF band to UHF band). When the frequency is lower than 13.56 MHz, the size of the double ridge waveguide (ridge electrodes 21a and 21b and non-ridge portion waveguides 22a and 22b) is larger than the size of the substrate on which the film forming process is performed. This is because the apparatus installation space is increased, and when the frequency is higher than 400 MHz, the influence of standing waves generated in the direction in which the process chamber 2 extends (L direction) increases. The circulators 8A and 8B guide the high-frequency power supplied from the high-frequency power sources 6A and 6B to the converters 3A and 3B, respectively, and that the high-frequency power having a different traveling direction is input to the high-frequency power sources 6A and 6B. It is to prevent.

  The converters 3A and 3B use the characteristics of the ridge waveguide to convert the transmission mode of high-frequency power from the TEM mode which is a coaxial transmission mode to the TE mode which is a basic transmission mode of a rectangular waveguide, thereby converting the process chamber 2 Transmit to. As described above, since the facing distance between the ridge electrodes 21a and 21b in the process chamber 2 is much smaller than the facing distance between the ridge parts 31a and 31b of the converters 3A and 3B, the ridge parts 31a and 31b and the ridge electrode 21a. , 21b, there is a step (ridge step). For this reason, a strong electric field is generated by setting the interval between the ridge electrodes 21a and 21b narrow, and the mother gas is ionized by introducing the mother gas from the mother gas supply means 12 between the ridge electrodes 21a and 21b. (Refer to the plasma generation region P shown in FIG. 1).

  Furthermore, due to the characteristics of the ridge waveguide, the electric field strength distribution in the direction along the H direction is substantially uniform between the ridge electrodes 21a and 21b. By using the ridge waveguide, it is possible to obtain a strong electric field strength enough to generate plasma between the ridge electrodes 21a and 21b. The process chamber 2 and the converters 3A and 3B may be configured by a double ridge waveguide as shown in FIGS. 1 and 2, or may be configured by a single ridge waveguide.

  On the other hand, a standing wave is formed in the process chamber 2 by the high frequency power supplied from the high frequency power supplies 6A and 6B. At this time, if the phase of the high-frequency power supplied from the high-frequency power supplies 6A and 6B is fixed, the position (phase) of the standing wave is fixed, and L is the direction in which the process chamber 2 extends in the ridge electrodes 21a and 21b. The distribution of the electric field strength in the direction is biased. Therefore, phase modulation for adjusting the position of the standing wave formed in the process chamber 2 is performed by adjusting the phase of the high frequency power supplied from at least one of the high frequency power supplies 6A and 6B with respect to time. Thereby, the distribution of the electric field intensity in the L direction in the ridge electrodes 21a and 21b is made uniform on a time average basis.

  Specifically, the high-frequency power supplied from the high-frequency power supplies 6A and 6B so that the position of the standing wave moves in the L direction in a sine wave shape, a triangular wave shape, or a staircase (step) shape as time passes. Is adjusted. The range in which the standing wave moves, the method of moving the standing wave (sin wave shape, triangular wave shape, stepped shape, etc.) and the optimization of the phase of the phase adjustment depend on the distribution of power, the distribution of light emission from plasma, It is performed based on the distribution of plasma density, the distribution of characteristics related to the formed film, and the like. Examples of characteristics relating to the film include film thickness, film quality, and characteristics as a semiconductor such as a solar cell.

  In this way, the characteristics of the ridge waveguide formed with the ridge portion and the phase modulation of the high-frequency power supplied from the high-frequency power sources 6A and 6B can cause the substrate (not shown) to move in either the H direction or the L direction. Uniform plasma can be generated in a wide range, and a high quality film can be uniformly formed when forming a film on a large area substrate.

An example of the substrate on which the film forming process is performed is a translucent glass substrate. For example, what is used for a solar cell panel has a vertical and horizontal size of 1.4 m × 1.1 m and a thickness of 3.0 mm to 4.5 mm. The substrate is carried into or out of the process chamber 2 from an openable / closable inlet (not shown) provided on the side surfaces of the process chamber 2 and the decompression vessel 4 orthogonal to the H direction. The film forming apparatus 1 shown in FIGS. 1 and 2 is configured to form a substrate in a horizontal state, but the substrate is held vertically or at an angle inclined by 7 ° to 15 ° from the vertical direction. Then, it may be configured in a vertical type for performing a film forming process.
The mother gas supply means 12 is connected to the process chamber 2 so as to be able to supply a mother gas necessary for performing plasma processing to a substrate such as SiH ₄ gas between the ridge electrodes 21a and 21b.

Next, a plasma processing method using the film forming apparatus 1 will be described.
First, air is exhausted from the decompression vessel 4 and the process chamber 2 accommodated therein by the exhaust means 11, and the substrate is placed at the film forming position by a substrate transport mechanism (not shown). The substrate is disposed outside the opposing ridge electrodes 21a and 21b, but may be disposed between the ridge electrodes 21a and 21b.

Next, a mother gas such as SiH ₄ gas is supplied from the mother gas supply means 12 between the ridge electrodes 21a and 21b. At this time, the exhaust amount of the exhaust means 11 is controlled, and the pressure inside the process chamber 2 or the like, that is, the pressure between the ridge electrodes 21a and 21b is maintained in a vacuum state of about 0.01 Pa to 10 kPa. Specifically, a mother gas such as SiH ₄ is supplied between a pair of ridge electrodes 21a and 21b provided with a plurality of through holes, and a gas that has not contributed to film formation is evacuated.

  Then, the high frequency power from the high frequency power supplies 6A and 6B is transmitted from the converters 3A and 3B to the ridge electrodes 21a and 21b of the process chamber 2 via the vacuum window 15, and an electric field is generated between the ridge electrodes 21a and 21b. . As described above, the mother gas is introduced between the ridge electrodes 21a and 21b by the mother gas supply means 12, and plasma is generated. At this time, the source gas of the mother gas is decomposed or activated to generate a film-forming species. Of the generated film forming species, the film that has moved by diffusion toward the substrate forms a film on the substrate and is subjected to a film forming process.

  By the way, as shown in FIG. 1, the vacuum window 15 is attached to the decompression container via an O-ring (seal member). Specifically, an inner flange 43 is integrally formed on the inner periphery of the opening 42 to which the vacuum window 15 of the decompression vessel is attached, and an O-ring is provided between the vacuum window 15 fitted in the opening 42 and the inner flange 43. 41 is interposed between the members 15 and 43 for sealing.

  And the flange member 45 which presses the circumference | surroundings of the vacuum window 15 in the direction which compresses the O-ring 41 is provided. The flange member 45 is fastened to the opening 42 of the decompression vessel 4 with a plurality of bolts 46. Further, the flange member 45 is integrally provided with a support portion 47 that supports the outer periphery of the container of the converters 3A and 3B. The support portion 47 is formed in an outer frame shape that is in contact with the four outer peripheral surfaces of the converters 3A and 3B.

  According to the above configuration, the vacuum window 15 is hermetically fixed to the opening 42 of the decompression vessel 4 via the O-ring 41 by the flange member 45, and at the same time, the converters 3A and 3B connected to the vacuum window 15 are provided. It is supported by a support portion 47 provided on the flange member 45. For this reason, the weight of the converters 3 </ b> A and 3 </ b> B can be reduced from being a load and damaging the vacuum window 15, and the soundness of the film forming apparatus 1 can be maintained. In particular, due to the structure of the film forming apparatus 1, the converters 3 </ b> A and 3 </ b> B are cantilevered by the vacuum window 15 with a certain amount of additional load so as to be in close contact with the vacuum window 15 even when the converter 3 </ b> A, 3 </ b> B is supported by a support stand (not shown). The vacuum window 15 is easily loaded by the load from the converters 3A and 3B. For this reason, most of the load is supported by the support portion 47 of the flange member 45, whereby the burden on the vacuum window 15 can be greatly reduced.

  On the other hand, as shown also in FIGS. 3 to 6, guide plates 51 and 52 made of conductive metal are provided on both surfaces of the vacuum window 15. The guide plates 51 and 52 are positioning members for positioning a part of the end part of the process chamber 2 and a part of the end part of the converters 3A and 3B in a fixed position with respect to the vacuum window 15. It is also a reflected wave reducing member that alleviates a sudden change in impedance between the process chamber 2 and the vacuum window 15 and between the transducers 3A and 3B and the vacuum window 15.

  The guide plates 51 and 52 are flat plates that stand at right angles from the outer and inner surfaces of the vacuum window 15 and are formed along the peripheral surfaces of the process chamber 2 and the end surfaces of the converters 3A and 3B. It has an H shape (see FIG. 3). It is preferable that the guide plates 51 and 52 are continuous. However, in order to suppress thermal deformation and to be easily inserted into the end surface portions of the process chamber 2 and the containers of the converters 3A and 3B, a part of the guide plates 51 and 52 is cut or slit. It may be provided. The guide plate 51 provided on the vacuum side (process chamber 2 side) with respect to the vacuum window 15 is fixed to the vacuum window 15 by, for example, Ni brazing or diffusion welding, and the atmosphere side ( The guide plate 52 provided on the converters 3A and 3B side) can be fixed to the vacuum window 15 by adhesion or the like. Further, a part of the guide plates 51 and 52 may be fixed so as to be embedded in the vacuum window 15.

  As shown in FIGS. 5 and 6, the process chamber 2 is inserted inside the guide plate 51, and the converters 3A and 3B are inserted inside the guide plate 52, respectively, and are detachably fixed by bolts or the like not shown. Is done. In addition, as shown in FIG. 7, you may provide the guide plates 51 and 52 so that it may contact | connect the outer peripheral side of converter 3A, 3B.

  In this embodiment, since the high frequency power from the high frequency power supplies 6A and 6B is transmitted from the converters 3A and 3B to the ridge electrodes 21a and 21b of the process chamber 2 via the vacuum window 15, It is necessary to maintain the mutual positional relationship between the process chamber 2 and the converters 3A and 3B with high accuracy. For this reason, if such guide plates 51 and 52 are provided as positioning members, a part of the container of the process chamber 2 and the converters 3A and 3B can be obtained without requiring special jigs or measuring instruments. The process chamber 2 and the converters 3A and 3B can be quickly and surely attached to the vacuum window 15 simply by inserting them into the guide plates 51 and 52, respectively, and the process chamber 2 and the converters 3A and 3B are accurately attached to the vacuum window 15. Can be positioned. As a result, misalignment between the process chamber 2 and the converters 3A and 3B is prevented to avoid transmission loss of high-frequency power, and the electric field distribution in the process chamber 2 is made uniform to improve the quality of the film forming process on the substrate. be able to. In addition, the time required for assembly and maintenance during the maintenance of the film forming apparatus 1 can be shortened, and high-quality plasma processing can be performed at a high operating rate.

FIG. 8 is a graph showing the effect obtained by providing the guide plates 51 and 52. The vertical axis represents the time required for assembly work and adjustment work in maintenance. Conventionally, since there are no guide plates 51 and 52 in the vacuum window 15, after assembling and fixing the process chamber 2, the vacuum window 15, and the transducers 3A and 3B, the apparatus is started up to adjust the power supply to match the impedance. When film formation is confirmed, defects such as abnormal reflected waves and film distribution may be discovered. The temperature of the apparatus is lowered again, and the positional relationship between the process chamber 2 and the converters 3A and 3B is readjusted. It may be necessary to do this.
In contrast, in the present embodiment, by providing the guide plates 51 and 52, the process chamber 2 is inserted into the guide plate 51, and the converters 3A and 3B are inserted into the guide plate 52, respectively, so that the positional accuracy can be easily achieved. Since it is secured and fixed, the rearward readjustment operation as described above does not occur, and the great effect of reducing the assembly / adjustment time to about 60% of the conventional one can be obtained.

  By the way, in the conventional structure in which the guide plates 51 and 52 are not provided, the dielectric constant changes between the process chamber 2 and the vacuum window 15, and between the converters 3A and 3B and the vacuum window 15, and the change position thereof varies. Since it is unstable, the impedance tends to change suddenly, and there is a problem that a reflected wave is likely to be generated in the propagated high frequency. On the other hand, in the present embodiment, since the guide plates 51 and 52 are electrically conductive and have a structure in which the guide plates 51 are in close contact with the vacuum window 15, the impedance change position to the vacuum window 15 is fixed and the impedance sudden change factor due to instability Can be excluded. For this reason, the guide plates 51 and 52 can function as a reflected wave reducing member.

  In this way, the tendency of the impedance to change suddenly between the process chamber 2 and the vacuum window 15 and between the converters 3A and 3B and the vacuum window 15 is alleviated, and this is caused by the sudden change in impedance. As a result, the high frequency power transmission loss can be avoided, the electric field distribution in the process chamber 2 can be made uniform, and the high frequency power supply system can be effectively prevented from being consumed or broken. The quality of plasma processing such as film formation can be improved.

  Further, since the positioning member and the reflected wave reducing member attached to the vacuum window 15 are common parts by the guide plates 51 and 52, the increase in the number of parts of the film forming apparatus 1 is reduced, and the simple and inexpensive configuration is used. The process chamber 2 and the transducers 3A and 3B can be positioned easily and accurately, and the generation of reflected waves can be reduced and high-quality vacuum processing can be performed.

  Further, since the guide plates 51 and 52 are formed in a plate shape along the peripheral surfaces of the process chamber 2 and the converters 3A and 3B by standing upright from the inner surface and the outer surface of the vacuum window 15, for example, ascending the process chamber 2 Even if a gap is generated between the process chamber 2 and the vacuum window 15 and between the converters 3A and 3B and the vacuum window 15 due to thermal expansion caused by temperature and thermal contraction when the temperature is lowered, the gap is guided. It is blocked (shielded) by the plates 51 and 52, and leakage of high-frequency power from here is suppressed. For this reason, transmission loss of high-frequency power can be avoided by a simple and inexpensive structure, and the electric field distribution in the process chamber 2 can be made uniform to improve the quality of the film forming process on the substrate.

  On the other hand, as shown in FIG. 9, the thickness of the guide plate 51 (52) is preferably formed so as to gradually decrease toward the tip. Specifically, a chamfering C that is greater than or equal to C5 chamfering is applied to the tip of the guide plate 51 (52), or a roundness that is greater than or equal to R5 is provided. Further, as indicated by an imaginary line 51a, the thickness of the guide plate 51 (52) may be gradually reduced from the base end portion to the tip end portion in a tapered shape.

  In such a case, the vacuum window 15 is a dielectric as described above, and the guide plate 51 which is a reflected wave reducing member between the process chamber 2 and the vacuum window 15 and between the transducers 3A and 3B and the vacuum window 15. , 52 is provided, the sudden change in impedance in the vacuum window 15 is alleviated. Here, by gradually reducing the thickness of the guide plates 51 and 52 toward the tip, the cross-sectional area of the guide plates 51 and 52 gradually changes without abruptly changing, so that the sudden change in impedance in the vacuum window 15 is made more effective. It is possible to relax, and the quality of the film forming process on the substrate can be further improved.

  Further, as shown in FIG. 10, the base plate of the guide plates 51 and 52 is made of the same material (quartz glass, alumina ceramics, etc.) as the vacuum window 15 and supports protrusions 15a for supporting the guide plates 51 and 52 from below. It is also preferable to form a shape in which the thickness of the support protrusion 15a is gradually reduced toward the tip.

  Thus, by providing the support protrusions 15a formed of the same material as the material of the vacuum window 15 and supporting the guide plates 51 and 52 from below, the support strength of the guide plates 51 and 52 can be increased. Since the thickness of the support protrusion 15a gradually decreases toward the tip, the tendency of the impedance to change suddenly in the vacuum window 15 can be further alleviated, thereby further improving the quality of the film forming process on the substrate. .

  As shown in FIGS. 11 and 12, a gap S is provided between the guide plates 51 and 52 and the container of the process chamber 2 or the converters 3A and 3B, and a conductive elastic member 57 is interposed in the gap S. You may disguise. In the present embodiment, as the conductive elastic member 57, for example, a sled spring contact made by bending a sheet metal material made of beryllium copper alloy or the like is used, and the elastic member 57 is attached to the process chamber 2 or by utilizing its elasticity. The containers of the converters 3A and 3B are brought into contact with the guide plates 51 and 52. The elastic member 57 has a warped longitudinal direction along the insertion direction (L direction) of the process chamber 2 and the converters 3A, 3B with respect to the guide plates 51, 52. The gap S and the elastic member 57 are preferably provided in the upper part of the inner peripheral portion of the guide plates 51 and 52. Thereby, the supporting load of the process chamber 2 and the converters 3A and 3B can be held by the lower surfaces of the guide plates 51 and 52.

  According to the above configuration, for example, when the process chamber 2 is thermally expanded, the relative position between the vacuum window 15 and the process chamber 2 or the relative position between the vacuum window 15 and the converters 3A and 3B is changed in the L direction. In addition, the gap S between the conductive guide plates 51 and 52 provided in the vacuum window 15 and the containers of the process chamber 2 and the converters 3A and 3B is electrically connected via the elastic member 57. To be kept. Thereby, the potential contact among the process chamber 2, the converters 3A and 3B, the vacuum window 15, and the guide plates 51 and 52 is satisfactorily performed, so that the transmission loss can be reduced and the electric field in the process chamber 2 can be reduced. The non-uniform distribution can be suppressed and the quality of the plasma processing can be improved. The elastic member 57 is not limited to the warped spring contact, and may be, for example, a wool metal piece. However, the process chamber 2 and the converters 3A and 3B can be smoothly fitted to the guide plates 51 and 52 by using a warped spring contactor so that the longitudinal direction thereof is along the L direction. There is an advantage that you can.

  As shown in FIGS. 13 to 16, the center portion of the process chamber 2 is fixed on the bottom surface of the decompression vessel 4 via the center fixing portion 17, and the process chamber 2 and the decompression vessel 4 are mutually restrained by thermal deformation. Relatively fixed without. The center fixing part 17 has a simple cylindrical shape and is arranged at the center of the bottom surface of the process chamber 2 in plan view. This position is defined as the starting point of thermal expansion of the process chamber 2. A total of eight slide support portions 18A, 18B, and 18C are arranged between the bottom surface of the decompression vessel 4 and the bottom surface of the process chamber 2 so as to surround the center fixing portion 17 in plan view. Among these, the two slide support portions 18A are disposed apart from each other in the L direction with the center fixing portion 17 interposed therebetween, and the four slide support portions 18B are disposed near the four corners of the process chamber 2, and the two slide support portions 18C are disposed. Are spaced apart from each other in the H direction across the center fixing portion 17.

  Each slide support 18A, 18B, 18C includes a slide unit 61 (first slide unit) that absorbs thermal expansion in the L direction (first direction) of the process chamber 2 with respect to the bottom surface of the decompression vessel 4, and the decompression vessel 4 Slide unit 62 (second slide unit) that absorbs thermal expansion in the H direction (second direction) of the process chamber 2 with respect to the bottom surface of the substrate, a long connecting column 63, a short connecting column 64, and a flat neutral plate 65 Are combined. Each of the slide units 61 and 62 includes a guide rail 67 and a linear bearing 68, and the linear bearing 68 can freely slide in the L direction or the H direction while straddling the guide rail 67.

In the slide support portion 18 </ b> A, a slide unit 61 is installed on a long connecting column 63 fixed on the bottom surface of the decompression container 4, and a linear bearing 68 of the slide unit 61 is fixed to the bottom surface of the process chamber 2. .
In the slide support portion 18 </ b> B, a slide unit 61 is installed between the neutral plate 65 and the process chamber 2, and a slide unit 62 is installed between the neutral plate 65 and the decompression container 4.
In the slide support portion 18 </ b> C, the neutral plate 65 and the process chamber 2 are connected by a short connecting column 64, and the slide unit 62 is installed between the neutral plate 65 and the decompression container 4.

  In general, when the process chamber 2 is thermally expanded, the dimensions are increased radially from the center portion (center fixing portion 17) of the process chamber 2 in plan view. Therefore, by providing the slide support portions 18A, 18B, and 18C having the above-described configuration, the thermal expansion in the horizontal direction of the process chamber 2 with respect to the bottom surface of the decompression vessel 4 can be performed without moving the central position of the thermally expanded process chamber 2. Can be completely absorbed. Thereby, the process chamber 2 and the bottom surface of the decompression vessel 4 can maintain the similar shape of the process chamber 2 without being restrained by thermal deformation. For this reason, for example, the concern that non-uniform thermal expansion stress concentrates on only one of the vacuum windows 15 provided on both sides of the process chamber 2 and damages the vacuum window 15 is eliminated, and the soundness of the film forming apparatus 1 is maintained. can do. Similarly, the process chamber 2 can be made of a thin and light plate material without requiring a rigid structure against thermal deformation. Moreover, since the central portion of the process chamber 2 is fixed to the central portion of the decompression vessel 4 via the center fixing portion 17, the process chamber 2 can be stably fixed in the decompression vessel 4, and a decompression vessel (not shown) It is possible to maintain the mutual positional relationship with the substrate transport mechanism provided on the substrate and the substrate support portion during film formation.

  Further, the four slide support portions 18B provided at positions farthest from the center fixing portion 17 that is the starting point of thermal expansion of the process chamber 2 include a slide unit 61 that absorbs thermal expansion in the L direction of the process chamber 2, and a process Since the slide unit 62 that absorbs thermal expansion in the H direction of the chamber 2 is overlapped via a flat neutral plate 65, how each part of the process chamber 2 expands in the horizontal direction in plan view. However, this expansion is decomposed into a vector component VL along the L direction (see FIG. 16) or a vector component VH along the H direction (see FIG. 15), and the vector component VL is absorbed by the slide unit 61, and the vector component VH Is absorbed by the slide unit 62. For this reason, the thermal expansion of the process chamber 2 can be smoothly absorbed and the film forming apparatus 1 can be operated soundly.

  FIG. 17 is a longitudinal sectional view showing a structural example in which the vacuum window 15 is slidable in the L direction with respect to the decompression container 4. The vacuum window 15 is fitted into the opening 42 of the decompression vessel 4 via an O-ring 71 (seal member) provided on the peripheral surface thereof, and the vacuum window 15 is O-ring with respect to the decompression vessel 4. While being kept airtight by 71, it is possible to slide in the connecting direction of the process chamber 2 and the converters 3A and 3B, that is, the L direction.

  According to the above configuration, the vacuum window 15 and the converters 3 </ b> A and 3 </ b> B can slide in accordance with the extension in the L direction due to the thermal expansion of the process chamber 2. Thereby, the process chamber 2 and the end portions of the converters 3A and 3B can always be kept in close contact with the vacuum window 15, and a more stable transmission path can be secured in terms of electric field.

  FIG. 18 is a side view showing a first embodiment of the slide structure of the converters 3A and 3B with respect to the decompression vessel 4. FIG. Here, the converters 3A and 3B are supported so as to be slidable in the L direction with respect to the decompression vessel 4, and a pressing device 75 (pressing means) for pressing the converters 3A and 3B toward the process chamber 2 is provided. Yes. The pressing device 75 includes pressing means such as a spring 76 or an air cylinder 77. The pressing force may be controlled by providing both the spring 76 and the air cylinder 77.

  According to the above configuration, even if the process chamber 2 is thermally expanded to expand the size of the container and is thermally contracted after being pressed in a direction in which the vacuum window 15 and the converters 3A and 3B are separated from each other, the vacuum window 15 is pressed by the pressing device 75. The converters 3A and 3B are pressed toward the process chamber 2 and returned to their original positions. For this reason, no gap is generated between the process chamber 2, the vacuum window 15, and the converters 3A and 3B, and the process chamber 2 can be kept in close contact with each other. Therefore, it is possible to avoid transmission loss of high-frequency power due to the occurrence of a gap, to make the electric field distribution in the process chamber 2 uniform, and to improve the quality of the film forming process on the substrate.

  FIG. 19 is a side view showing a second embodiment of the slide structure of the converters 3A and 3B with respect to the decompression container 4. FIG. Here, a surface pressure sensor 82 (contact force detection means) is provided between the process chamber 2 and the converters 3A and 3B. The pressing device 81 includes the surface pressure sensor 82, a linear bearing 83 that supports the transducers 3A and 3B so as to be movable in the L direction, a servo motor 84, a ball screw mechanism 85, and control means (not shown). It is prepared for.

  The control means of the pressing device 81 is based on the adhesion force information (pressure information by the pressing force) from the surface pressure sensor 82, and the vacuum window 15 is not excessively loaded even if the process chamber 2 is thermally expanded, and the process chamber 2, the servo motor 84 is controlled so that the contact force is such that no gap is generated between the vacuum window 15 and the converters 3 </ b> A and 3 </ b> B. The rotation of the servo motor 84 is converted into a linear motion along the L direction by the ball screw mechanism 85 and transmitted to the converters 3A and 3B, and the converters 3A and 3B move on the linear bearing 83 in the L direction. For this reason, the converters 3 </ b> A and 3 </ b> B are driven in a direction to make contact with the process chamber 2.

  According to this configuration, the contact force detected by the surface pressure sensor 82 changes according to the dimensional change due to thermal expansion of the process chamber 2, and the servo motor 84 is driven based on this contact force information, and the vacuum window 15. In addition, an adhesive force is applied so that no excessive load is applied and no gap is generated between the process chamber 2, the vacuum window 15, and the converters 3A and 3B. That is, when the process chamber 2 is expanded, the converters 3A and 3B are driven in a direction away from the process chamber 2, and when the process chamber 2 is contracted, the converters 3A and 3B are driven in a direction approaching the process chamber 2. For this reason, the process chamber 2 and the ends of the converters 3A and 3B are always kept in close contact with the vacuum window 15 and a high-quality film forming process is performed by securing a transmission path that is stable in terms of electric field. Can do.

  The embodiment of the present invention is not limited to the above-described embodiment, and various modifications and improvements can be added without departing from the spirit of the present invention. The added embodiments are also included in the scope of rights of the present invention. For example, the configurations shown in FIGS. 1 to 19 may be applied to a single film forming apparatus or may be partially applied.

1 Film forming equipment (vacuum processing equipment)
2 Process chamber (discharge chamber)
3A, 3B Converter 4 Pressure reducing vessel 5A, 5B Coaxial cable 6A, 6B High frequency power supply (power supply means)
15 Vacuum window 15a Support projection 17 Center fixing part 18A, 18B, 18C Slide support part 21a, 21b Ridge electrode 31a, 31b Ridge part 41, 71 O-ring (seal member)
51, 52 Guide plate (positioning member, reflected wave reducing member)
57 Elastic member 61 Slide unit (first slide unit)
62 Slide unit (second slide unit)
63 Long connecting rod 64 Short connecting rod 65 Neutral plates 75, 81 Pressing device (pressing flange member means)
82 Surface pressure sensor (adhesion force detection means)
83 Linear bearing 84 Servo motor 85 Ball screw mechanism C Chamfer S Clearance

Claims (13)

A discharge chamber composed of a ridge waveguide having a pair of planar ridge electrodes disposed in parallel with each other and in which discharge is performed;
The ridge waveguide has a pair of flat plate-shaped ridge portions disposed on both sides of the discharge chamber and facing each other in parallel, and transmits high-frequency power to the discharge chamber. A pair of transducers that cause a discharge between the ridge electrodes;
Power supply means for supplying high-frequency power to the ridge portion of the converter,
The discharge chamber is housed inside a decompression vessel, the converter is arranged outside the decompression vessel, and the vacuum is connected to the discharge chamber and the converter via a vacuum window provided in the decompression vessel. A processing device comprising:
A vacuum processing apparatus, comprising: positioning members for positioning a part of the discharge chamber and a part of the converter at fixed positions with respect to the vacuum window on both surfaces of the vacuum window. A discharge chamber composed of a ridge waveguide having a pair of planar ridge electrodes disposed in parallel with each other and in which discharge is performed;
The ridge waveguide has a pair of flat plate-shaped ridge portions disposed on both sides of the discharge chamber and facing each other in parallel, and transmits high-frequency power to the discharge chamber. A pair of transducers that cause a discharge between the ridge electrodes;
Power supply means for supplying high-frequency power to the ridge portion of the converter,
The discharge chamber is housed inside a decompression vessel, the converter is arranged outside the decompression vessel, and the vacuum is connected to the discharge chamber and the converter via a vacuum window provided in the decompression vessel. A processing device comprising:
Provided on both surfaces of the vacuum window are conductive reflected wave reducing members that reduce impedance changes between the discharge chamber and the vacuum window and between the converter and the vacuum window. A vacuum processing apparatus.   The vacuum processing apparatus according to claim 2, wherein the reflected wave reducing member also serves as the positioning member according to claim 1.   4. The plate according to claim 2, wherein the reflected wave reducing member has a plate shape that stands up at right angles from an inner surface and an outer surface of the vacuum window and extends along a peripheral surface of the discharge chamber and the container of the converter. Vacuum processing equipment.   The vacuum processing apparatus according to claim 4, wherein the thickness of the reflected wave reducing member is gradually reduced toward the tip.   The base part of the reflected wave reducing member is made of the same material as the vacuum window, and is provided with a support protrusion for supporting the reflected wave reducing member from below, and the thickness of the support protrusion gradually decreases toward the tip. The vacuum processing apparatus according to claim 2, wherein:   2. A gap is provided between the positioning member or the reflected wave reducing member and the container of the discharge chamber or the container of the converter, and a conductive elastic member is interposed in the gap. The vacuum processing apparatus in any one of 6.   In plan view, the central portion of the discharge chamber installed inside the decompression vessel is defined as a starting point of thermal expansion and fixed on the bottom surface of the decompression vessel via a center fixing portion, and the center fixing portion in plan view Three or more slide support portions are provided between the bottom surface of the decompression vessel and the discharge chamber so as to surround the heat discharge chamber, and these slide support portions are provided in the horizontal direction of the discharge chamber with respect to the bottom surface of the decompression vessel. The vacuum processing apparatus according to any one of claims 1 to 7, wherein expansion is absorbable.   The slide support part absorbs a first slide unit that absorbs an extension of the discharge chamber in a first direction with respect to a bottom surface of the decompression vessel, and an extension in a second direction orthogonal to the first direction. The vacuum processing apparatus according to claim 8, wherein the second slide unit is stacked with a horizontal neutral plate.   The vacuum window is attached to the decompression vessel via a seal member provided on a peripheral surface thereof, and the vacuum window is kept airtight by the seal member with respect to the decompression vessel, and the discharge chamber and the The vacuum processing apparatus according to claim 9, wherein the vacuum processing apparatus is slidable in a connecting direction of the converter.   The said converter is supported with respect to the said pressure reduction container so that a slide is possible in the connection direction of the said discharge chamber and the said converter, It has a press means which presses this converter to the said discharge chamber side. The vacuum processing apparatus according to any one of 1 to 10.   Adhesion force detection means is provided between the converter and the discharge chamber, and the pressing means is loaded on the vacuum window even if the discharge chamber is thermally expanded based on the adhesion force information from the adhesion force detection means. The converter is driven in a direction in which the converter is separated from the discharge chamber so that the contact force is such that no gap is generated between the discharge chamber, the vacuum window, and the converter. The vacuum processing apparatus according to claim 11.   The vacuum window is attached to the decompression vessel via a seal member, and a flange member is provided for pressing the periphery of the vacuum window in a direction in which the seal member is compressed. The vacuum processing apparatus according to claim 1, wherein the support portion is provided integrally.

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