JP2013093461A - Deposition apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a deposition apparatus which inhibits heat from escaping from a susceptor and prevents the damage by heat of a susceptor supporting member.SOLUTION: A deposition apparatus 10 heats a susceptor 21 with a heater 23 and introduces a material gas from a material gas introduction part 13 to a vacuum tank 11 to deposit a thin film on a substrate 51 disposed on a surface of the plate part 21a of the susceptor 21. A heat resistance member 22, which is made of a material different from the susceptor 21, is disposed between an end part of a cylinder part 21b of the susceptor 21 and the susceptor support member 31, and heat of the susceptor 21 is blocked by the heat resistance member 22 and thus is not easily transmitted to the susceptor support member 31.

Description

  The present invention relates to a film forming apparatus for forming a film while heating a substrate.

  Currently, LEDs have the characteristics of lower power consumption and longer life than incandescent bulbs, and are attracting attention as next-generation lighting. In an LED, a laminated film including an n layer, a light emitting layer, and a p layer is formed on a sapphire substrate by epitaxial crystal growth. MOVPE (metal organic vapor phase epitaxy) is often used for epitaxial growth.

FIG. 7 is an internal configuration diagram of a conventional film forming apparatus 100 used in the MOVPE method.
A conventional film forming apparatus 100 includes a vacuum chamber 111, a vacuum exhaust unit 112 that evacuates the vacuum chamber 111, a source gas introduction unit 113 that introduces a source gas into the vacuum chamber 111, and a substrate 151 on the bottom surface. A saddle-like susceptor 121 to be placed, a heater 123 disposed inside the susceptor 121 and opposed to the bottom rear surface of the susceptor 121, and provided at an end opposite to the bottom side of the susceptor 121, And a susceptor support member 131 that supports the susceptor.
The material of the susceptor 121 is graphite, and the material of the susceptor support member 131 is quartz.

In order to form a thin film using the film forming apparatus 100, first, a plurality of substrates 151 are carried into the vacuum chamber 111 and placed on the bottom surface of the susceptor 121.
The vacuum chamber 111 is evacuated by the evacuation unit 112 to form a vacuum atmosphere. Thereafter, evacuation is continued and the vacuum atmosphere in the vacuum chamber 111 is maintained.

A heating power source 133 is electrically connected to the heater 123. Electric power is supplied from the heating power supply 133 to the heater 123 to cause the heater 123 to generate heat.
The susceptor 121 is heated by heat radiation from the heater 123, and the substrate 151 is heated by heat conduction from the susceptor 121.
When the source gas is introduced into the vacuum chamber 111 from the source gas introduction unit 113, the introduced source gas is chemically reacted with heat on the substrate 151 to be crystallized to form a thin film.

  In the step of heating the substrate 151, it is necessary to heat the bottom surface of the susceptor 121 to 900 ° C. or more and 1300 ° C. or less. However, heat is generated by heat radiation from the outer peripheral side surface of the susceptor 121 or heat conduction to the susceptor support member 131. In order to escape, the temperature of the bottom surface of the susceptor 121 tends to decrease as it approaches the outer periphery, and it is difficult to maintain a uniform temperature within a temperature difference of 1 ° C. within the range where the substrate 151 is disposed. Further, when the temperature difference between the bottom portion and the side surface portion of the susceptor 121 is 500 ° C. or more, the susceptor 121 may be damaged.

  Therefore, a method of increasing the load of the heater near the side surface portion of the heater 123 and increasing the temperature of the side surface portion of the susceptor 121 can be considered. However, the material of the susceptor support member 131 is quartz, which is 900 ° C. or higher. When contacting with the susceptor 121, the susceptor support member 131 may be damaged by heat.

JP 2011-18811 A Republished Patent 2008/016047 Republished Patent No. 2007/066642

  The present invention was created to solve the above-described disadvantages of the prior art, and an object of the present invention is to provide a film forming apparatus in which heat escape from the susceptor is suppressed and damage to the susceptor support member can be prevented. There is.

In order to solve the above-described problems, the present invention provides a vacuum chamber, a vacuum exhaust unit that evacuates the vacuum chamber, a source gas introduction unit that introduces a source gas into the vacuum chamber, and a vacuum chamber disposed in the vacuum chamber. And a susceptor comprising a plate portion on which a substrate is disposed, and a cylinder portion having an opening at one end on the back surface opposite to the surface of the plate portion, and disposed inside the tube portion, A heater opposed to the back surface of the plate portion and the inner peripheral surface of the cylinder portion; and a susceptor support member provided at the other end opposite to the one end of the cylinder portion and supporting the susceptor. A film forming apparatus that heats the susceptor with the heater, introduces a source gas into the vacuum chamber from the source gas introduction unit, and forms a thin film on the substrate disposed on the surface of the plate unit; , Between the other end of the cylindrical portion and the susceptor support member A deposition apparatus the heat resistance member is disposed is another material from said susceptor.
The present invention is a film forming apparatus, wherein the thermal resistance member has a smaller linear expansion coefficient than the susceptor, and the thermal resistance member has a smaller thermal conductivity than the susceptor. .
The present invention is a film forming apparatus, wherein the material of the susceptor is graphite and the material of the heat resistance member is SiC.
This invention is a film-forming apparatus, Comprising: On the outer side of the range in which the said board | substrate is arrange | positioned among the said board parts, the heat resistance part thinner than the thickness of the range in which the said board | substrate is arrange | positioned was cyclically | annularly provided. A film forming apparatus.
This invention is a film-forming apparatus, Comprising: The said board part and the said cylinder part are film-forming apparatuses comprised so that separation | separation was possible.
This invention is a film-forming apparatus, Comprising: The said board part is a film-forming apparatus heated at 900 degreeC or more and 1300 degrees C or less.

  Since heat escape from the susceptor is suppressed, it is possible to maintain a uniform temperature within a range where the substrate is disposed in the plate portion. Therefore, the film quality difference between the thin films formed on each substrate is reduced, and the yield is improved.

  Since it becomes difficult for heat to be transmitted to the susceptor support member, damage to the susceptor support member due to heat can be prevented. The cylindrical portion can be heated without fear of thermal damage to the susceptor support member, and the temperature difference between the cylindrical portion and the plate portion can be reduced to prevent heat escape from the plate portion.

Internal configuration diagram of film forming apparatus of the present invention Top view of the back side of the susceptor plate The figure for demonstrating another example of the cross-sectional shape of a thermal resistance part The figure for demonstrating another example of the positional relationship of a thermal-resistance part and a contact part. The figure for demonstrating the state from which the board part and cylinder part of the susceptor were isolate | separated Another internal configuration diagram of the film forming apparatus of the present invention Internal configuration diagram of conventional film deposition system

<Structure of deposition system>
The structure of the film forming apparatus of the present invention will be described.
FIG. 1 is an internal configuration diagram of the film forming apparatus 10.

  The film forming apparatus 10 is disposed in the vacuum chamber 11, a vacuum exhaust unit 12 that evacuates the vacuum chamber 11, a source gas introduction unit 13 that introduces a source gas into the vacuum chamber 11, and the vacuum chamber 11. A susceptor 21 including a plate portion 21a on which the substrate 51 is arranged, a cylinder portion 21b whose end is covered with a back surface opposite to the surface of the plate portion 21a, and an inner side of the cylinder portion 21b. A heater 23 opposed to the back surface of the plate portion 21a and the inner peripheral surface of the cylinder portion 21b, and a susceptor support member 31 that is provided at the other end opposite to the one end of the cylinder portion 21b and supports the susceptor 21. Have.

Here, the raw material gas introduction unit 13 includes a discharge container 13a having a plurality of discharge holes 13c provided on one surface, and a raw material gas source 13b connected to the discharge container 13a and supplying the raw material gas into the discharge container 13a. ing.
Of the discharge container 13a, the surface provided with the discharge hole 13c is exposed in the vacuum chamber 11, and when the source gas is supplied into the discharge container 13a from the source gas source 13b, the supplied source gas is supplied to each discharge hole. 13c is discharged into the vacuum chamber 11.

Here, the material of the susceptor 21 is graphite whose surface is covered with SiC, and is not damaged even when heated to a temperature of 900 ° C. or higher and 1300 ° C. or lower. Note that the linear expansion coefficient of graphite in the temperature range of 350 ° C. to 400 ° C. is 5.0 × 10 ⁻⁶ / K, and the thermal conductivity is 130 W / (m · K).

FIG. 2 is a plan view of the back surface of the plate portion 21a.
Here, the plate portion 21a has a disk shape, and has a substrate placement portion 45 provided with a range in which a plurality of substrates 51 are placed on the surface.

  In addition, an annular contact portion 46 that can be annularly contacted with one end in the longitudinal direction of a cylindrical portion 21b described later is provided on the outer peripheral portion of the back surface of the plate portion 21a outside the substrate placement portion 45. Referring to FIG. 1, the thickness of contact portion 46 is the same as the thickness of substrate placement portion 45 or thinner than the thickness of substrate placement portion 45.

The plate portion 21a is disposed at a position facing the surface provided with the discharge hole 13c of the discharge container 13a, and the surface of the plate portion 21a is opposed to the surface provided with the discharge hole 13c.
Here, the cylindrical portion 21b has a cylindrical shape whose inner peripheral diameter is smaller than the diameter of the plate portion 21a, and the central axis passes through the center of the plate portion 21a and is aligned with the central axis perpendicular to the surface of the plate portion 21a. One end in the longitudinal direction is attached in an annular contact with the contact portion 46 on the back surface of the plate portion 21a, and the opening at one end of the tube portion 21b is covered with the back surface of the plate portion 21a.

The material of the susceptor support member 31 is quartz here, and is formed in a cylindrical shape.
A thermal resistance member 22 to be described later is fixed to an end portion of the cylindrical portion 21b opposite to the plate portion 21a, and the susceptor support member 31 has a longitudinal axis in a state where the central axis coincides with the central axial line of the cylindrical portion 21b. One end of the direction is fixed to the heat resistance member 22.

  The end of the susceptor support member 31 opposite to the heat resistance member 22 is extended to the outside of the vacuum chamber 11 through an opening provided in the wall surface of the vacuum chamber 11, and the susceptor support member 31 A rotating portion 32 that rotates the susceptor support member 31 is connected to the end portion.

Here, the rotating unit 32 is a motor, and is configured to transmit power to the susceptor support member 31 so that the susceptor support member 31 can rotate about the central axis of the susceptor support member 31.
When the susceptor support member 31 is rotated by the rotating portion 32, the susceptor 21 and the heat resistance member 22 are also rotated around the central axis of the susceptor support member 31 together with the susceptor support member 31.

  A magnetic seal 34 is disposed in the gap between the opening of the wall surface of the vacuum chamber 11 and the outer peripheral side surface of the susceptor support member 31 so that the gap is closed. Even if the susceptor support member 31 is rotated, Airtightness is maintained.

  Here, the heater 23 includes a disk-shaped first heater 23a, a ring-shaped second heater 23b having an inner peripheral diameter larger than the diameter of the first heater 23a, and an inner peripheral diameter of the second heater 23b. It has a cylindrical third heater 23c larger than the outer diameter. The length of the third heater 23c in the longitudinal direction is shorter than the length of the cylindrical portion 21b in the longitudinal direction.

  The first to third heaters 23a to 23c are arranged on the inner side of the cylindrical portion 21b in a state where the respective central axes are aligned, and the surfaces of the first and second heaters 23a and 23b are the back surfaces of the plate portion 21a. The outer peripheral side surface of the third heater 23c faces the inner peripheral surface of the cylindrical portion 21b.

  The first to third heaters 23a to 23c are separated from the plate portion 21a and the cylinder portion 21b, respectively. Even if the susceptor 21 is rotated by the rotating portion 32, the first to third heaters 23a to 23c are vacuumed. It is designed to be stationary with respect to the tank 11.

  A heating power source 33 is electrically connected to the first to third heaters 23a to 23c. When power is supplied from the heating power source 33 to the first to third heaters 23a to 23c, the first to third heaters 23a to 23c generate heat and emit radiant heat. The back surface of the plate portion 21a and the inner peripheral surface of the tube portion 21b are heated when they receive the emitted radiant heat.

  The heating efficiency by radiant heat is so small that the space | interval between the 1st, 2nd heater 23a, 23b and the back surface of the board part 21a and the space | interval between the 3rd heater 23c and the internal peripheral surface of the cylinder part 21b are respectively narrow. Is preferable because of a large value.

  The plate portion 21a is heated by a plurality of different heaters depending on the distance from the center, so that even if heat is easily lost from the outer peripheral portion outside the substrate placement portion 45 of the plate portion 21a, the outer peripheral heater ( Here, if the output of the second heater 23b) is increased, the inside of the substrate placement portion 45 can be heated to a uniform temperature.

  Not only is the plate portion 21a heated by the first and second heaters 23a and 23b, but the cylindrical portion 21b is also heated by the third heater 23c, thereby reducing the temperature difference between the plate portion 21a and the cylindrical portion 21b. It is possible to reduce the amount of heat transferred from the plate portion 21a to the tube portion 21b.

A thermal resistance member 22, which is a material different from the susceptor 21, is disposed between the end of the cylinder portion 21 b opposite to the plate portion 21 a side and the susceptor support member 31.
Here, the material of the heat resistance member 22 is SiC (silicon carbide), and is not damaged even when heated to a high temperature of 1300 ° C. or higher. The linear expansion coefficient of SiC in the temperature range of 25 ° C. (room temperature) to 400 ° C. is 4.0 × 10 ⁻⁶ / K, and the thermal conductivity is 84 W / (m · K).

  Here, the shape of the heat resistance member 22 is a ring-shaped plate, the front surface is annularly contacted and fixed to one end of the cylindrical portion 21 b of the susceptor 21, and the rear surface is annularly contacted and fixed to one end of the susceptor support member 31. Has been.

  The contact area between the thermal resistance member 22 and the cylinder part 21b is larger than the contact area between the susceptor support member 31 and the cylinder part 21b. Here, the susceptor support member 31 and the cylinder part 21b are not in contact with each other.

  The linear expansion coefficient of the thermal resistance member 22 in the temperature range of 900 ° C. or higher and 1300 ° C. or lower is made smaller than the linear expansion coefficient of the susceptor 21, and the thermal resistance member 22 generates heat radiation from the third heater 23c or the cylinder portion 21b. Even if it is heated by heat conduction from, the fixed portion between the heat resistance member 22 and the cylindrical portion 21b and the fixed portion between the heat resistance member 22 and the susceptor support member 31 are not loosened.

  In addition, the thermal conductivity of the thermal resistance member 22 in the temperature range of 900 ° C. or higher and 1300 ° C. or lower is smaller than the thermal conductivity of the susceptor 21, and the heat of the cylindrical portion 21 b is blocked by the thermal resistance member 22 to support the susceptor. It is difficult to be transmitted to the member 31. Therefore, even if the cylinder part 21b is heated by the third heater 23c, the susceptor support member 31 is prevented from being damaged by heat.

  Further, the distance between the susceptor support member 31 and the third heater 23c is excessively separated by the thickness of the heat resistance member 22, and the heat radiation of the third heater 23c is not easily transmitted to the susceptor support member 31. Yes.

  In this embodiment, the material of the susceptor 21 is graphite and the material of the heat resistance member 22 is SiC. However, the linear expansion coefficient in the temperature range of 900 ° C. or higher and 1300 ° C. or lower is smaller than the linear expansion coefficient of the susceptor 21. If the thermal conductivity in the temperature range of not lower than 1 ° C. and lower than 1300 ° C. is smaller than the thermal conductivity of the susceptor 21, the material of the thermal resistance member 22 is not limited to SiC, and may be, for example, PBN (pyrolytic boron nitride). A material with a low coefficient of linear expansion in the temperature range of 900 ° C. or higher and 1300 ° C. or lower is preferable.

  The shape of the heat resistance member 22 is not limited to a ring shape. If it is the shape which shields between each heater 23a-23c and the susceptor support member 31, it can prevent that the susceptor support member 31 is heated by the thermal radiation from each heater 23a-23c, and is preferable.

In the present embodiment, a thermal resistance portion 41 having a thickness smaller than the thickness of the substrate placement portion 45 is annularly provided outside the substrate placement portion 45 in the plate portion 21 a of the susceptor 21.
Here, the thermal resistance portion 41 is provided in a shape in which the back surface side is recessed in the plate portion 21a, but may be provided in a shape in which the front surface side is recessed, or is recessed from both the front surface side and the back surface side. It may be provided in a shape. Here, the cross-sectional shape of the depression is a “U” shape (a square shape with one side missing) as shown in FIG. 1, but may be a “U” shape (an arc shape) as shown in FIG. 3.

Here, although the thermal resistance portion 41 is provided on the inner side of the inner periphery of the contact portion 46, a part of the thermal resistance portion 41 may be made into the contact portion 46 as shown in FIG. 4.
With respect to the heat that moves in the radial direction from the inside of the substrate placement portion 45 toward the outer peripheral portion outside the substrate placement portion 45, the thermal resistance portion 41 is thinner than the substrate placement portion 45, so that the thermal conductance is reduced. Therefore, the speed of heat transfer is reduced.

Therefore, it is difficult for heat to escape from the inside of the substrate placement portion 45, and the inside of the substrate placement portion 45 can be maintained at a uniform temperature by being heated by the heater 23.
In the present embodiment, the plate portion 21a and the cylindrical portion 21b of the susceptor 21 are configured to be separable. FIG. 5 is a schematic view showing a state where the plate portion 21a and the cylindrical portion 21b are separated. The contact portion 46 of the plate portion 21a is a cut between the plate portion 21a and the cylindrical portion 21b.

  Therefore, compared to the case where the plate portion 21a and the cylinder portion 21b are integrally formed and there is no cut, the contact area between the plate portion 21a and the cylinder portion 21b is small and moves from the plate portion 21a toward the cylinder portion 21b. The heat conductance is small with respect to the heat to be generated, and it is difficult for heat to escape from the outer peripheral portion of the plate portion 21a outside the substrate placement portion 45.

  When the contact part 46 is extended to the outer periphery of the back surface of the plate part 21a, the area of the outer peripheral side surface of the plate part 21a becomes smaller as the thickness of the contact part 46 becomes thinner. Thermal radiation is reduced, and heat is more difficult to escape from the outer peripheral portion of the plate portion 21a outside the substrate placement portion 45, which is preferable.

  In addition, even if deposits adhere to the surface of the plate part 21a by the film forming process described later, the plate part 21a and the cylinder part 21b can be separated, and only the plate part 21a is placed outside the vacuum chamber 11 after the film forming process. Since it can be carried out and washed, or replaced with another plate portion 21a, maintenance is easy.

<Film Forming Method Using Film Forming Apparatus>
A film forming method for forming a thin film on the substrate 51 using the film forming apparatus 10 will be described.
The substrate 51 is carried into the vacuum chamber 11, and the substrate 51 is placed in contact with the surface of the substrate placement portion 45 in the plate portion 21 a of the susceptor 21. In this embodiment, a sapphire substrate is used as the substrate 51, but the present invention is not limited to the case where the material of the substrate 51 is sapphire.

The vacuum chamber 11 is evacuated by the evacuation unit 12 to form a vacuum atmosphere. Thereafter, evacuation by the evacuation unit 12 is continued, and the vacuum atmosphere in the vacuum chamber 11 is maintained.
The susceptor 21 is rotated about the central axis of the susceptor support member 31 together with the susceptor support member 31 and the heat resistance member 22 by the rotating unit 32. Then, the substrate 51 also rotates around the central axis of the susceptor support member 31 together with the susceptor 21. Thereafter, the rotation of the susceptor 21 by the rotating unit 32 is continued.

Electric power is supplied from the heating power source 33 to the first to third heaters 23a to 23c to cause the first to third heaters 23a to 23c to generate heat.
The portion of the inner surface of the susceptor 21 that faces the first to third heaters 23a to 23c receives the radiant heat from the first to third heaters 23a to 23c. Heated. The susceptor 21 is rotated by a rotating unit 32, and a portion of the susceptor 21 that is the same distance from the central axis of the susceptor support member 31 is heated with a uniform amount of heat regardless of the arrangement of the first to third heaters 23a to 23c. The

Inside the plate portion 21a, heat is transferred from the back surface to the front surface by heat conduction. Here, heating is performed so that the surface of the plate portion 21a is 900 ° C. or higher and 1300 ° C. or lower. The substrate 51 is disposed in contact with the surface of the plate portion 21a, and the substrate 51 is heated by heat conduction from the surface of the plate portion 21a.
Even inside the cylinder portion 21b, heat is transmitted from the inner peripheral surface to the outer peripheral surface by heat conduction.

Although the outer peripheral side surface of the plate portion 21a and the outer peripheral surface of the cylindrical portion 21b are exposed in the vacuum chamber 11, heat is lost by heat radiation from the outer peripheral side surface of the plate portion 21a and the outer peripheral side surface of the cylindrical portion 21b. The heat resistance member 22 is disposed between the susceptor support member 31 and the heat of the cylindrical portion 21b is blocked by the heat resistance member 22 so that it is difficult for the susceptor support member 31 to escape. Therefore, the temperature drop of the cylinder part 21b is suppressed from the conventional structure which does not have the heat resistance member 22, and the temperature difference between the plate part 21a and the cylinder part 21b can be made smaller than that of the conventional structure, and from the plate part 21a to the cylinder part 21b. Heat escape due to heat conduction can be prevented.
Moreover, the heating of the susceptor support member 31 due to heat conduction from the cylindrical portion 21b is suppressed, and the susceptor support member 31 can be prevented from being damaged by heat.

  Of the plate portion 21 a, the substrate placement portion 45 is surrounded by the thermal resistance portion 41. The thickness of the thermal resistance portion 41 is thinner than the thickness of the substrate placement portion 45, and even if the temperature of the outer peripheral portion outside the substrate placement portion 45 of the plate portion 21 a is lowered by thermal radiation, The heat is difficult to escape. Therefore, the inside of the substrate placement unit 45 is maintained at a uniform temperature within a temperature difference of 1 ° C., and each substrate 51 is heated to a uniform temperature.

A source gas is supplied from the source gas source 13b into the discharge vessel 13a. As the source gas, a gas capable of chemically reacting on the heated substrate 51 is used. Here, TMG (trimethylgallium) gas and NH ₃ gas are used. However, in the present invention, the source gas is TMG gas and NH ₃ gas. It is not limited to.

  The supplied source gas is discharged into the vacuum chamber 11 from the discharge hole 13c, reaches the surface of the heated substrate 51, is crystallized by a chemical reaction with the heat of the substrate 51, and a thin film is formed on the surface of the substrate 51. The Here, a GaN thin film is formed.

The susceptor 21 is rotated by the rotating part 32, and a uniform amount of source gas reaches the plurality of substrates 51 arranged at the same distance from the center of the surface of the plate part 21a to form a thin film having a uniform film thickness. The
The substrate placement portion 45 in the plate portion 21a is maintained at a uniform temperature, and each substrate 51 is heated to a uniform temperature, so that the difference in film quality between thin films formed on each substrate 51 is reduced.

  After a thin film having a predetermined thickness is formed on the surface of each substrate 51, the release of the source gas from the source gas source 13b is stopped. The supply of power from the heating power source 33 to the first to third heaters 23a to 23c is stopped. The rotation of the susceptor 21 by the rotating unit 32 is stopped.

The evacuation by the evacuation unit 12 is stopped, and the inside of the vacuum chamber 11 is exposed to the atmosphere. The film-formed substrate 51 is carried out to the outside of the vacuum chamber 11 and is sent to a subsequent process.
The undeposited substrate 51 is carried into the vacuum chamber 11 and the above-described deposition process is repeated.

  The present invention includes a configuration in which the thermal resistance portion 41 is not provided in the plate portion 21a of the susceptor 21 with reference to FIG. 6, but the configuration in which the thermal resistance portion 41 is provided in the plate portion 21a is included. This is preferable because the inside of the substrate placement portion 45 can be easily maintained at a uniform temperature.

  In addition, a configuration in which the plate portion 21a and the cylindrical portion 21b of the susceptor 21 are closely fixed and fixed or integrally molded and cannot be separated is also included in the present invention, but the plate portion 21a and the cylindrical portion 21b can be separated from each other. This is preferable because heat escape from the plate portion 21a to the tube portion 21b can be more effectively suppressed and maintenance is easy.

DESCRIPTION OF SYMBOLS 10 ... Film-forming apparatus 11 ... Vacuum chamber 12 ... Vacuum exhaust part 13 ... Raw material gas introduction part 21 ... Susceptor 21a ... Plate part 21b ... Cylindrical part 22 ... Heat resistance member 23 ... Heater 31 ... ... Susceptor support member 41 ... Thermal resistance part 51 ... Substrate

Claims (6)

A vacuum chamber;
An evacuation unit for evacuating the vacuum chamber;
A source gas introduction part for introducing a source gas into the vacuum chamber;
A susceptor comprising a plate portion disposed in the vacuum chamber and having a substrate disposed on a surface thereof, and a cylindrical portion whose one end is covered with a back surface opposite to the surface of the plate portion;
A heater disposed inside the cylindrical portion and opposed to the back surface of the plate portion and the inner peripheral surface of the cylindrical portion;
A susceptor support member that is provided at the other end opposite to the one end of the cylindrical portion and supports the susceptor;
Have
A film forming apparatus that heats the susceptor by the heater, introduces a source gas into the vacuum chamber from the source gas introduction unit, and forms a thin film on a substrate disposed on the surface of the plate unit;
A film forming apparatus in which a thermal resistance member made of a material different from that of the susceptor is disposed between the other end of the cylindrical portion and the susceptor support member. The linear expansion coefficient of the thermal resistance member is smaller than the linear expansion coefficient of the susceptor,
The film forming apparatus according to claim 1, wherein a thermal conductivity of the thermal resistance member is smaller than a thermal conductivity of the susceptor.   The film forming apparatus according to claim 1, wherein a material of the susceptor is graphite, and a material of the heat resistance member is SiC.   The thermal resistance part whose thickness is thinner than the thickness of the range in which the said board | substrate is arrange | positioned outside the range in which the said board | substrate is arrange | positioned among the said board parts is given in any one of Claim 1 thru | or 3. 2. The film forming apparatus according to 1.   The film forming apparatus according to claim 1, wherein the plate portion and the cylindrical portion are configured to be separable.   The film forming apparatus according to claim 1, wherein the plate portion is heated to 900 ° C. or higher and 1300 ° C. or lower.

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