JP2013075799A - METHOD FOR JOINING SiC/Si COMPOSITE MATERIAL BODY AND SiC/Si COMPOSITE MATERIAL JOINED BODY - Google Patents
METHOD FOR JOINING SiC/Si COMPOSITE MATERIAL BODY AND SiC/Si COMPOSITE MATERIAL JOINED BODY Download PDFInfo
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- 239000002131 composite material Substances 0.000 title claims abstract description 94
- 238000005304 joining Methods 0.000 title claims abstract description 44
- 238000000034 method Methods 0.000 title claims abstract description 25
- 239000011261 inert gas Substances 0.000 claims abstract description 7
- 238000010438 heat treatment Methods 0.000 claims description 18
- 230000003746 surface roughness Effects 0.000 claims description 11
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 110
- 229910010271 silicon carbide Inorganic materials 0.000 description 110
- 230000000052 comparative effect Effects 0.000 description 16
- 239000000463 material Substances 0.000 description 16
- 239000002184 metal Substances 0.000 description 15
- 239000011230 binding agent Substances 0.000 description 13
- 238000013001 point bending Methods 0.000 description 13
- 239000000843 powder Substances 0.000 description 11
- 239000005011 phenolic resin Substances 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 6
- 239000011800 void material Substances 0.000 description 6
- 238000005219 brazing Methods 0.000 description 5
- 238000000465 moulding Methods 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000009715 pressure infiltration Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000004663 powder metallurgy Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
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Abstract
Description
本発明は、SiC/Si複合材料体の接合方法、及びSiC/Si複合材料体が接合されてなるSiC/Si複合材料接合体に関する。 The present invention relates to a method for joining a SiC / Si composite material body and a SiC / Si composite material joined body obtained by joining SiC / Si composite material bodies.
SiC/Si(炭化ケイ素/シリコン)複合材料からなるSiC/Si複合材料体は、軽量で剛性が高く熱膨張が小さいという優れた特性を有し、半導体製造装置や液晶製造装置など精密機器の構成品に使用されている。 A SiC / Si composite material composed of a SiC / Si (silicon carbide / silicon) composite material has excellent characteristics such as light weight, rigidity and low thermal expansion, and is a configuration of precision equipment such as semiconductor manufacturing equipment and liquid crystal manufacturing equipment. It is used for goods.
中空構造のSiC/Si複合材料体を作製する場合には、接合工程を経る必要がある。従来、有機バインダを使用してSiC多孔質体を接着し、これに金属Siを含浸させて一体化させる方法(例えば、特許文献1参照)、金属箔等のろう材を使用して複数のSiC/Si複合材料体を接合する方法などによって、中空構造のSiC/Si複合材料体を得ていた。 When producing a SiC / Si composite material having a hollow structure, it is necessary to go through a joining step. Conventionally, a method of bonding an SiC porous body using an organic binder and impregnating the SiC porous body with metal Si (for example, refer to Patent Document 1), a plurality of SiC using a brazing material such as a metal foil The SiC / Si composite material having a hollow structure was obtained by a method of joining the / Si composite material.
しかしながら、有機バインダで接着したSiC多孔質体に金属Siを含浸させる方法では、有機バインダの接合面への塗布量を調整することが困難である。そして、塗布量が過多になると接合体の内部空間を閉塞するおそれがあり、過少になると接合体の接合強度及び気密性が低下するおそれがあった。また、金属Siは凝固すると膨張するため、降温時にSiC多孔質体から金属Siが染み出し、接合体の内部空間を閉塞することがあった。このように、この方法は、中空構造のSiC/Si複合材料体を作製することには適していない。 However, in the method of impregnating SiC porous body bonded with an organic binder with metal Si, it is difficult to adjust the coating amount of the organic binder on the bonding surface. If the amount applied is excessive, the internal space of the joined body may be blocked, and if it is too small, the joining strength and airtightness of the joined body may be reduced. Moreover, since metal Si expand | swells when it solidifies, metal Si oozes out from a SiC porous body at the time of temperature fall, and may block | close the internal space of a joined body. Thus, this method is not suitable for producing a SiC / Si composite material having a hollow structure.
一方、ろう材を使用して接合する方法では、空隙無く接合することは困難であり、接合強度が著しく低下するおそれがあった。 On the other hand, in the method of joining using a brazing material, it is difficult to join without a gap, and the joining strength may be significantly reduced.
本発明は、これらの問題に鑑みてなされたものであり、接合強度の向上を図った中空構造のSiC/Si複合材料接合体を得ることが可能なSiC/Si複合材料体の接合方法、及びSiC/Si複合材料接合体を提供することを目的とする。 The present invention has been made in view of these problems, and it is possible to obtain a SiC / Si composite material bonding method capable of obtaining a hollow structure SiC / Si composite material bonded body with improved bonding strength, and An object is to provide a SiC / Si composite material joined body.
本発明のSiC/Si複合材料体の接合方法は、複数のSiC/Si複合材料体を互いの接合面で当接させて、不活性ガス雰囲気下で前記接合面に対して0.05MPa〜10.0MPaの圧力を加えた状態で、1000℃〜1414℃に加熱して保持することにより接合することを特徴とする。 The SiC / Si composite material bonding method of the present invention is such that a plurality of SiC / Si composite materials are brought into contact with each other at the bonding surfaces, and 0.05 MPa to 10 MPa with respect to the bonding surfaces in an inert gas atmosphere. It joins by heating and holding at 1000 to 1414 degreeC in the state which applied the pressure of 0.0 MPa.
本発明のSiC/Si複合材料体の接合方法によれば、SiC/Si複合材料体の接合面を直接接合することができ、有機バインダを使用した場合のようにSiC/Si複合材料接合体の内部空間を閉塞するおそれを解消することが可能となる。そして、後述する実施例から分かるように、接合部の接合強度は、元のSiC/Si複合材料体(母材)の強度と同等であり、ろう材を使用した場合と比較して優れている。 According to the joining method of the SiC / Si composite material of the present invention, the joint surface of the SiC / Si composite material can be directly joined, and the SiC / Si composite material joined as in the case of using an organic binder. It is possible to eliminate the possibility of blocking the internal space. As can be seen from the examples described later, the bonding strength of the bonding portion is equivalent to the strength of the original SiC / Si composite material (base material), which is superior to the case where a brazing material is used. .
なお、加熱温度が1000℃未満では、Siの拡散が起こらないため、SiC/Si複合材料同士は接合しない。一方、加熱温度が1414℃を超えると、SiC/Si複合材料体からSiが溶け出すため、接合体全体の強度の低下、溶出したSiによって内部空間が閉塞するなどの不具合が発生するおそれがある。 Note that when the heating temperature is less than 1000 ° C., Si does not diffuse, so the SiC / Si composite materials are not joined together. On the other hand, when the heating temperature exceeds 1414 ° C., Si melts from the SiC / Si composite material body, which may cause problems such as a decrease in the strength of the entire bonded body and blockage of the internal space due to the eluted Si. .
また、加圧力が0.05MPa未満では、接合面内において非接触の割合が大きくなるため、接合が困難になる。一方、加圧力が10.0MPaを超えると、変形量が大きくなる、又は母材が損傷する。 On the other hand, when the applied pressure is less than 0.05 MPa, the non-contact ratio is increased in the bonding surface, so that bonding becomes difficult. On the other hand, when the applied pressure exceeds 10.0 MPa, the amount of deformation increases or the base material is damaged.
本発明のSiC/Si複合材料体の接合方法において、前記SiC/Si複合材料体のSiC充填率が20体積%〜95体積%であることが好ましい。なお、SiC充填率は、SiC/Si複合材料中のSiCの占有率を意味する。 In the SiC / Si composite material bonding method of the present invention, it is preferable that the SiC filling rate of the SiC / Si composite material body is 20% by volume to 95% by volume. In addition, a SiC filling rate means the occupation rate of SiC in a SiC / Si composite material.
SiC充填率が20体積%未満では、SiC/Si複合材料体が低剛性となり、SiC/Si複合材料接合体を構造部材に適用可能な範囲が非常に限定される。一方、SiC充填率が95%体積を超えると、金属Siの割合が少なくSi同士が接触する部分が少なくなるため、接合強度が劣る。 When the SiC filling rate is less than 20% by volume, the SiC / Si composite material body has low rigidity, and the range in which the SiC / Si composite material joined body can be applied to the structural member is very limited. On the other hand, when the SiC filling rate exceeds 95% volume, the proportion of metal Si is small, and the number of portions where Si contacts with each other decreases, resulting in poor bonding strength.
ただし、SiC/Si複合材料体のSiC充填率は20体積%〜80体積%であることがより好ましい。この場合、接合部に欠陥は発生せず、接合部の強度は母材であるSiC/Si複合材料体の強度と同等になる。 However, the SiC filling rate of the SiC / Si composite material body is more preferably 20% by volume to 80% by volume. In this case, no defect occurs in the joint portion, and the strength of the joint portion is equivalent to the strength of the SiC / Si composite material body as the base material.
そして、本発明のSiC/Si複合材料体の接合方法において、前記接合面の表面粗さが中心線平均粗さRaで0.1μmを超えないことが好ましい。 And in the joining method of the SiC / Si composite material of this invention, it is preferable that the surface roughness of the said joint surface does not exceed 0.1 micrometer by centerline average roughness Ra.
接合面の表面粗さRaが0.1μmを超えると、良好に接合することができない。 If the surface roughness Ra of the joint surface exceeds 0.1 μm, it cannot be satisfactorily joined.
また、本発明のSiC/Si複合材料体の接合方法において、前記加熱して保持する時間は1時間〜12時間であることが好ましい。 In the SiC / Si composite material bonding method of the present invention, the heating and holding time is preferably 1 hour to 12 hours.
保持時間が1時間未満では、Siの拡散が不十分なため、接合が不十分となる。一方、保持時間が12時間を超えると、Siの蒸発により接合面の表面粗さが増加するので、接合が困難になる。 When the holding time is less than 1 hour, the diffusion of Si is insufficient, so that the bonding becomes insufficient. On the other hand, if the holding time exceeds 12 hours, the surface roughness of the joint surface increases due to the evaporation of Si, so that joining becomes difficult.
本発明のSiC/Si複合材料接合体は、不活性ガス雰囲気下で当接された接合面に対して0.05MPa〜10.0MPaの圧力を加えた状態で、1000℃〜1414℃に加熱して保持されることにより、複数のSiC/Si複合材料体が接合されてなることを特徴とする。 The SiC / Si composite material assembly of the present invention is heated to 1000 ° C. to 1414 ° C. in a state where a pressure of 0.05 MPa to 10.0 MPa is applied to the joint surface abutted in an inert gas atmosphere. In this case, a plurality of SiC / Si composite materials are joined together.
本発明のSiC/Si複合材料接合体によれば、有機バインダを使用することなく、SiC/Si複合材料体の接合面が直接接合されている。よって、有機バインダを使用した場合のようにSiC/Si複合材料接合体の内部空間が閉塞されているおそれを解消することが可能となる。従って、SiC/Si複合材料接合体は中空構造であればより好ましい。 According to the SiC / Si composite material joined body of the present invention, the joint surface of the SiC / Si composite material body is directly joined without using an organic binder. Therefore, it is possible to eliminate the possibility that the internal space of the SiC / Si composite material bonded body is blocked as in the case where an organic binder is used. Therefore, the SiC / Si composite material joined body is more preferably a hollow structure.
そして、後述する実施例から分かるように、接合部の強度は、元のSiC/Si複合材料体の強度と同等であり、ろう材を使用して接合されたものと比較して優れている。 As can be seen from the examples described later, the strength of the bonded portion is equivalent to the strength of the original SiC / Si composite material, and is superior to that bonded using a brazing material.
本発明は、SiC/Si複合材料体を接合面で当接させた状態で加圧加熱(ホットプレス)して保持することにより、有機バインダやろう材などを使用することなく、SiC/Si複合材料体の接合面を直接接合してSiC/Si複合材料接合体(以下、単に接合体ともいう。)を得る方法、及びこれにより得られたSiC/Si複合材料接合体に関する。 In the present invention, a SiC / Si composite material body is held under pressure and heating (hot pressing) in a state where the SiC / Si composite material body is in contact with the joint surface, so that an SiC / Si composite material can be used without using an organic binder or brazing material. The present invention relates to a method for obtaining a SiC / Si composite material joined body (hereinafter also simply referred to as a joined body) by directly joining the joined surfaces of the material bodies, and an SiC / Si composite material joined body obtained thereby.
まず、接合に使用される複数のSiC/Si複合材料体を準備する。SiC/Si複合材料体のSiC充填率は、20体積%〜95体積%であることが好ましい。なお、SiC充填率とは、SiC/Si複合材料中のSiCの占有率を意味する。 First, a plurality of SiC / Si composite materials used for bonding are prepared. The SiC filling rate of the SiC / Si composite material body is preferably 20% by volume to 95% by volume. In addition, a SiC filling rate means the occupation rate of SiC in a SiC / Si composite material.
SiC充填率が20体積%未満では、SiC/Si複合材料体が低剛性となり、SiC/Si複合材料接合体を構造部材に適用可能な範囲が非常に限定される。一方、SiC充填率が95%体積を超えると、金属Siの割合が少なくSi同士が接触する部分が少なくなるため、接合強度が劣る。 When the SiC filling rate is less than 20% by volume, the SiC / Si composite material body has low rigidity, and the range in which the SiC / Si composite material joined body can be applied to the structural member is very limited. On the other hand, when the SiC filling rate exceeds 95% volume, the proportion of metal Si is small, and the number of portions where Si contacts with each other decreases, resulting in poor bonding strength.
ただし、SiC/Si複合材料体のSiC充填率は20体積%〜80体積%であることがより好ましい。この場合、接合部に欠陥は発生せず、接合部の強度は母材であるSiC/Si複合材料体の強度と同等になる。 However, the SiC filling rate of the SiC / Si composite material body is more preferably 20% by volume to 80% by volume. In this case, no defect occurs in the joint portion, and the strength of the joint portion is equivalent to the strength of the SiC / Si composite material body as the base material.
SiC/Si複合材料体は、その製造方法は限定されず、例えば、鋳造法、加圧鋳造法、加圧浸透法、非加圧浸透法、粉末冶金法などによって製造することができる。非加圧浸透法によりSiC/Si複合材料体を製造する場合、SiC粉末と有機バインダからなる混合物をプレス等で成形した成形体を所定形状に加工した後、これに金属Siを含浸させることにより行われる。 The production method of the SiC / Si composite material is not limited, and can be produced by, for example, a casting method, a pressure casting method, a pressure infiltration method, a non-pressure infiltration method, a powder metallurgy method, or the like. When producing a SiC / Si composite material by the non-pressure infiltration method, after processing a molded body obtained by molding a mixture of SiC powder and organic binder with a press or the like into a predetermined shape, this is impregnated with metal Si. Done.
なお、複数のSiC/Si複合材料体は、それぞれ適宜な形状に研削、切断加工を施す。このとき、SiC/Si複合材料体の接合面側に溝等を加工しておくことにより、完成後に接合体を中空構造とすることが可能となる。 The plurality of SiC / Si composite materials are each ground and cut into appropriate shapes. At this time, by processing a groove or the like on the joining surface side of the SiC / Si composite material body, the joined body can be formed into a hollow structure after completion.
そして、複数のSiC/Si複合材料体のそれぞれの接合面に鏡面研磨を施す。このとき、接合面の表面粗さは中心線平均粗さRaで少なくとも0.1μm以下とすることが好ましい。接合面の表面粗さRaが0.1μmを超えると、良好に接合することができず、接合強度が劣る。 Then, mirror polishing is applied to each joint surface of the plurality of SiC / Si composite materials. At this time, the surface roughness of the joint surface is preferably at least 0.1 μm or less in terms of the center line average roughness Ra. When the surface roughness Ra of the joint surface exceeds 0.1 μm, the joint cannot be satisfactorily joined and the joint strength is poor.
次に、これら複数のSiC/Si複合材料体を接合面で当接させて加圧加熱した状態を保持する。加圧加熱状態を保持する構成は限定されず、例えば、炉内に油圧シリンダを設置してものであってもよい。 Next, the plurality of SiC / Si composite materials are brought into contact with each other at the bonding surface and maintained in a pressurized and heated state. The configuration for maintaining the pressurized and heated state is not limited. For example, a hydraulic cylinder may be installed in the furnace.
このとき、1000℃〜1414℃に加熱する。加熱温度が1000℃未満では、Siの拡散が起きないため、SiC/Si複合材料同士は接合しない。一方、加熱温度が1414℃を超えると、SiC/Si複合材料体からSiが溶け出すため、接合体全体の強度の低下、溶出したSiによって溝部が閉塞するなどの不具合が発生する。 At this time, it heats to 1000 to 1414 degreeC. When the heating temperature is less than 1000 ° C., Si does not diffuse, so the SiC / Si composite materials are not joined together. On the other hand, when the heating temperature exceeds 1414 ° C., Si melts out of the SiC / Si composite material, so that problems such as a decrease in strength of the entire bonded body and a clogging of the groove due to eluted Si occur.
また、0.05MPa〜10.0MPaに加圧する。加圧力が0.05MPa未満では、接合面内において接触していない部分の割合が大きくなるため、接合が困難になる。一方、加圧力が10.0MPaを超えると、変形量が大きくなる、又は母材が損傷する。 Moreover, it pressurizes to 0.05 MPa-10.0 MPa. If the applied pressure is less than 0.05 MPa, the proportion of the portions that are not in contact with each other in the joining surface becomes large, so that joining becomes difficult. On the other hand, when the applied pressure exceeds 10.0 MPa, the amount of deformation increases or the base material is damaged.
接合面の面積、形状などによって適切な保持時間は変化するが、加圧加熱状態を1時間〜12時間保持することが好ましい。保持時間が1時間未満では、Siの拡散が不十分なため、接合が不十分となる。一方、保持時間が12時間を超えると、Siの蒸発により接合面の表面粗さが増加するので、接合が困難になる。 Although an appropriate holding time varies depending on the area and shape of the bonding surface, it is preferable to hold the pressurized and heated state for 1 to 12 hours. When the holding time is less than 1 hour, the diffusion of Si is insufficient, so that the bonding becomes insufficient. On the other hand, if the holding time exceeds 12 hours, the surface roughness of the joint surface increases due to the evaporation of Si, so that joining becomes difficult.
また、アルゴン、窒素等の不活性ガス雰囲気下で加圧加熱を行うことが望ましい。大気雰囲気で加圧加熱を行うと、Si上に酸化膜が生成し、Siが拡散する際の障壁となる。また、真空状態で加圧加熱を行うと、上記温度範囲ではSiが活発に蒸発するので、接合面の表面荒さが増加し、接合が困難になる。 In addition, it is desirable to perform pressure heating in an inert gas atmosphere such as argon or nitrogen. When pressure heating is performed in an air atmosphere, an oxide film is formed on Si and becomes a barrier when Si diffuses. In addition, when pressure heating is performed in a vacuum state, Si actively evaporates in the above temperature range, so that the surface roughness of the bonding surface increases and bonding becomes difficult.
複数のSiC/Si複合材料体を接合面で当接させて加圧加熱した状態を保持することにより、Siが固相拡散して、SiC/Si複合材料体の接合面が直接接合され、SiC/Si複合材料接合体を得ることができる。そして、有機バインダを使用する必要がないので、上述した問題は発生しない。 By maintaining a state in which a plurality of SiC / Si composite materials are brought into contact with each other at the bonding surface and pressurized and heated, Si is solid-phase diffused, and the bonding surface of the SiC / Si composite material is directly bonded. / Si composite material joined body can be obtained. And since it is not necessary to use an organic binder, the problem mentioned above does not generate | occur | produce.
以下、本発明の実施例及び比較例を具体的に挙げ、本発明を詳細に説明する。 Hereinafter, the present invention will be described in detail with specific examples and comparative examples of the present invention.
〔実施例1〕
原料粉末としてSiC粉末(信濃電気製錬株式会社製のGP#500、 平均粒径30μm)を準備し、これに有機バインダとしてのフェノール樹脂粉末(DIC株式会社製のOI−305A)を15質量%添加した。そして、これを成形型に充填して熱プレス成形を行った。これにより、一辺100mm、厚さ10mmの正方形板形状の多孔質成形体を作製した。
[Example 1]
SiC powder (GP # 500 manufactured by Shinano Denki Smelting Co., Ltd., average particle size 30 μm) is prepared as a raw material powder, and 15% by mass of phenol resin powder (OI-305A manufactured by DIC Corporation) as an organic binder. Added. Then, this was filled in a mold and subjected to hot press molding. Thus, a square plate-shaped porous molded body having a side of 100 mm and a thickness of 10 mm was produced.
そして、この多孔質成形体を金属Si(日本電工株式会社製)とともに炉内に設置し、真空雰囲気で1200℃に加熱した状態を12時間保持することにより、フェノール樹脂を脱脂して炭化させた。その後、炉内を1645℃に加熱した状態を22時間保持することにより、溶融SiをSiC多孔質焼結体に含浸させた。これにより、SiC充填率が55体積%のSiC/Si複合材料体を得た。 And this porous molded object was installed in a furnace with metal Si (made by Nippon Electric Works), and the state heated to 1200 degreeC in the vacuum atmosphere was hold | maintained for 12 hours, and the phenol resin was degreased and carbonized. . After that, the SiC porous sintered body was impregnated with molten Si by maintaining the furnace heated to 1645 ° C. for 22 hours. This obtained the SiC / Si composite material body whose SiC filling rate is 55 volume%.
そして、このSiC/Si複合材料体から一辺50mm、厚さ10mmの正方形板形状の試験片を2枚切り出した。さらに、それぞれの試験片に、図1(a)及び図1(b)に示すように、幅2.0mm、深さ1.5mmの溝を3本加工した。その後、溝を加工した面(接合面)に鏡面加工を施し、その表面粗さRaを0.05μmとした。そして、図1(c)に示すように、これら試験片を1.0MPaで加圧して互いの接合面を当接させた状態で炉内に設置し、不活性ガス雰囲気下で1300℃に加熱した状態を6時間保持した。これにより、試験片が接合され、SiC/Si複合材料接合体が得られた。 Then, two square plate-shaped test pieces each having a side of 50 mm and a thickness of 10 mm were cut out from the SiC / Si composite material body. Further, as shown in FIGS. 1A and 1B, three grooves each having a width of 2.0 mm and a depth of 1.5 mm were processed in each test piece. Thereafter, the surface (joint surface) on which the grooves were processed was mirror-finished to have a surface roughness Ra of 0.05 μm. And as shown in FIG.1 (c), these test pieces are pressurized in 1.0 MPa, and it installs in a furnace in the state which contacted each other's joining surface, and it heats to 1300 degreeC by inert gas atmosphere. This state was maintained for 6 hours. Thereby, a test piece was joined and the SiC / Si composite-material joined body was obtained.
得られたSiC/Si複合材料接合体の接合部の断面を光学顕微鏡で観察した結果、接合部に空隙は認められなかった。また、接合部の四点曲げ強度は300MPaであり、SiC/Si複合材料体(母材)と同じ強度であった。結果を表1にまとめた。 As a result of observing a cross section of the joined portion of the obtained SiC / Si composite material bonded body with an optical microscope, no void was observed in the joined portion. The four-point bending strength of the joint was 300 MPa, which was the same strength as the SiC / Si composite material (base material). The results are summarized in Table 1.
〔実施例2〕
実施例2として、接合時の加熱温度を1020℃としたこと以外は、実施例1と同様にして試験片の接合を試みた。得られたSiC/Si複合材料接合体の接合部の断面を光学顕微鏡で観察した結果、接合部に空隙は認められなかった。また、接合部の四点曲げ強度は260MPaであり、十分な接合強度を有していた。
[Example 2]
As Example 2, joining of test pieces was tried in the same manner as in Example 1 except that the heating temperature at the time of joining was 1020 ° C. As a result of observing a cross section of the joined portion of the obtained SiC / Si composite material bonded body with an optical microscope, no void was observed in the joined portion. Further, the four-point bending strength of the joint portion was 260 MPa, and the joint portion had sufficient joint strength.
〔実施例3〕
実施例3として、接合時の加熱加圧保持時間を11時間としたこと以外は、実施例1と同様にして試験片の接合を試みた。得られたSiC/Si複合材料接合体の接合部の断面を光学顕微鏡で観察した結果、接合部に空隙は認められなかった。また、接合部の四点曲げ強度は290MPaであった。
Example 3
As Example 3, the test piece was tried to be joined in the same manner as in Example 1 except that the heating and pressurizing holding time at the time of joining was 11 hours. As a result of observing a cross section of the joined portion of the obtained SiC / Si composite material bonded body with an optical microscope, no void was observed in the joined portion. The four-point bending strength of the joint was 290 MPa.
〔実施例4,5〕
実施例4,5として、接合時の加圧力をそれぞれ0.05MPa、9.5MPaとしたこと以外は、実施例1と同様にして試験片の接合を試みた。得られたSiC/Si複合材料接合体の接合部の断面を光学顕微鏡で観察した結果、接合部に空隙は認められなかった。また、接合部の四点曲げ強度は300MPaであった。
[Examples 4 and 5]
In Examples 4 and 5, joining of test pieces was attempted in the same manner as in Example 1 except that the pressure applied during joining was 0.05 MPa and 9.5 MPa, respectively. As a result of observing a cross section of the joined portion of the obtained SiC / Si composite material bonded body with an optical microscope, no void was observed in the joined portion. The four-point bending strength of the joint was 300 MPa.
〔実施例6〕
原料粉末としてSiC粉末100質量%(大平洋ランダム株式会社製のNG90を60質量%、信濃電気製錬株式会社製のGP#800を40質量%配合)及びコークス粉末12質量%(オリエンタル産業株式会社製のAT.No.40−C)を準備し、これに有機バインダとしてのフェノール樹脂粉末(DIC株式会社製のOI−305A)を12質量%添加した。そして、これを成形型に充填して熱プレス成形を行った。これにより、一辺100mm、厚さ10mmの正方形板形状の多孔質成形体を作製した。
Example 6
SiC powder 100% by mass (60% by mass of NG90 manufactured by Taihei Random Co., Ltd. and 40% by mass of GP # 800 manufactured by Shinano Denki Smelting Co., Ltd.) and 12% by mass of coke powder (Oriental Sangyo Co., Ltd.) AT.No. 40-C) manufactured by the manufacturer was prepared, and 12% by mass of phenol resin powder (OI-305A manufactured by DIC Corporation) as an organic binder was added thereto. Then, this was filled in a mold and subjected to hot press molding. Thus, a square plate-shaped porous molded body having a side of 100 mm and a thickness of 10 mm was produced.
そして、この多孔質成形体を金属Si(日本電工株式会社製)とともに炉内に設置し、真空雰囲気で1200℃に加熱した状態を12時間保持することにより、フェノール樹脂を脱脂して炭化させた。その後、炉内を1645℃に加熱した状態を22時間保持することにより、溶融SiをSiC多孔質焼結体に含浸させた。これにより、SiC充填率が90体積%のSiC/Si複合材料体を得た。 And this porous molded object was installed in a furnace with metal Si (made by Nippon Electric Works), and the state heated to 1200 degreeC in the vacuum atmosphere was hold | maintained for 12 hours, and the phenol resin was degreased and carbonized. . After that, the SiC porous sintered body was impregnated with molten Si by maintaining the furnace heated to 1645 ° C. for 22 hours. Thereby, a SiC / Si composite material having a SiC filling rate of 90% by volume was obtained.
そして、実施例1と同様に、このSiC/Si複合材料体から試験片を作製し、これら試験片を加圧加熱した状態で保持して、試験片の接合を試みた。 And like Example 1, the test piece was produced from this SiC / Si composite material body, these test pieces were hold | maintained in the state heated and pressurized, and joining of the test piece was tried.
得られたSiC/Si複合材料接合体の接合部の断面を光学顕微鏡で観察した結果、接合部に空隙は認められなかった。また、接合部の四点曲げ強度は180MPaであり、SiC/Si複合材料体(母材)の四点曲げ強度260MPaより低下していたが、十分な接合が確認された。 As a result of observing a cross section of the joined portion of the obtained SiC / Si composite material bonded body with an optical microscope, no void was observed in the joined portion. The four-point bending strength of the joint was 180 MPa, which was lower than the four-point bending strength of 260 MPa of the SiC / Si composite material (base material), but sufficient joining was confirmed.
〔実施例7〕
原料粉末として、SiC粉末100質量%(信濃電気製錬株式会社製のGP#800、平均粒径17μm)と金属Si粉末120質量%(福田金属箔粉工業株式会社製のSi−S−10μm、平均粒径10μm)を準備した。また、有機バインダとして、フェノール樹脂(大日本インキ社製のOI−305A)を準備した。フェノール樹脂の添加量をSiC粉末に対し10重量%として、これを成形型に充填して熱プレス成形を行った。これにより、一辺100mm、厚さ10mmの正方形板形状の多孔質成形体を作製した。
Example 7
As raw material powder, SiC powder 100% by mass (GP # 800 manufactured by Shinano Denki Smelting Co., Ltd., average particle size 17 μm) and metal Si powder 120% by mass (Si-S-10 μm manufactured by Fukuda Metal Foil Co., Ltd.) An average particle size of 10 μm) was prepared. Moreover, a phenol resin (OI-305A manufactured by Dainippon Ink Co., Ltd.) was prepared as an organic binder. The amount of phenol resin added was 10% by weight with respect to the SiC powder, and this was filled in a mold and subjected to hot press molding. Thus, a square plate-shaped porous molded body having a side of 100 mm and a thickness of 10 mm was produced.
そして、この多孔質成形体を金属Si(日本電工株式会社製)とともに炉内に設置し、真空雰囲気で1200℃に加熱した状態を12時間保持することにより、フェノール樹脂を脱脂して炭化させた。その後、炉内を1645℃に加熱した状態を22時間保持することにより、溶融SiをSiC多孔質焼結体に含浸させた。これにより、SiC充填率が22体積%のSiC/Si複合材料体を得た。 And this porous molded object was installed in a furnace with metal Si (made by Nippon Electric Works), and the state heated to 1200 degreeC in the vacuum atmosphere was hold | maintained for 12 hours, and the phenol resin was degreased and carbonized. . After that, the SiC porous sintered body was impregnated with molten Si by maintaining the furnace heated to 1645 ° C. for 22 hours. This obtained the SiC / Si composite material body whose SiC filling rate is 22 volume%.
そして、実施例1と同様に、このSiC/Si複合材料体から試験片を作製し、これら試験片を加圧加熱した状態で保持して、試験片の接合を試みた。 And like Example 1, the test piece was produced from this SiC / Si composite material body, these test pieces were hold | maintained in the state heated and pressurized, and joining of the test piece was tried.
得られたSiC/Si複合材料接合体の接合部の断面を光学顕微鏡で観察した結果、接合部に空隙は認められなかった。また、接合部の四点曲げ強度は130MPaであり、SiC/Si複合材料体(母材)と同じ強度であった。 As a result of observing a cross section of the joined portion of the obtained SiC / Si composite material bonded body with an optical microscope, no void was observed in the joined portion. Moreover, the four-point bending strength of the joint was 130 MPa, which was the same strength as the SiC / Si composite material (base material).
〔実施例8〕
実施例8として、2枚の試験片の接合面の表面粗さRaをともにそれぞれ0.09μmとしたこと以外は、実施例1と同様にして試験片の接合を試みた。その結果、四点曲げ強度は260MPaであり、十分な接合強度を有していた。
Example 8
As Example 8, joining of the test pieces was tried in the same manner as in Example 1 except that the surface roughness Ra of the joint surfaces of the two test pieces was 0.09 μm. As a result, the four-point bending strength was 260 MPa, and the joint strength was sufficient.
〔比較例1〕
原料粉末としてSiC粉末100質量%(大平洋ランダム株式会社製のNG90を60質量%、信濃電気製錬株式会社製のGP#800を40質量%配合)及びコークス粉末15質量%(オリエンタル産業株式会社製のAT.No.40−C)を準備し、これに有機バインダとしてのフェノール樹脂粉末(DIC株式会社製のOI−305A)を12質量%添加した。そして、これを成形型に充填して熱プレス成形を行った。SiC充填率が96体積%のSiC/Si複合材料体を得た。これにより、一辺100mm、厚さ10mmの正方形板形状の多孔質成形体を作製した。
[Comparative Example 1]
SiC powder 100% by mass (60% by mass of NG90 manufactured by Taihei Random Co., Ltd. and 40% by mass of GP # 800 manufactured by Shinano Denki Smelting Co., Ltd.) and 15% by mass of coke powder (Oriental Sangyo Co., Ltd.) AT.No. 40-C) manufactured by the manufacturer was prepared, and 12% by mass of phenol resin powder (OI-305A manufactured by DIC Corporation) as an organic binder was added thereto. Then, this was filled in a mold and subjected to hot press molding. A SiC / Si composite material having a SiC filling rate of 96% by volume was obtained. Thus, a square plate-shaped porous molded body having a side of 100 mm and a thickness of 10 mm was produced.
そして、この多孔質成形体を金属Si(日本電工株式会社製)とともに炉内に設置し、真空雰囲気で1200℃に加熱した状態を12時間保持することにより、フェノール樹脂を脱脂して炭化させた。その後、炉内を1645℃に加熱した状態を22時間保持することにより、溶融SiをSiC多孔質焼結体に含浸させた。これにより、SiC充填率が96体積%のSiC/Si複合材料体を得た。 And this porous molded object was installed in a furnace with metal Si (made by Nippon Electric Works), and the state heated to 1200 degreeC in the vacuum atmosphere was hold | maintained for 12 hours, and the phenol resin was degreased and carbonized. . After that, the SiC porous sintered body was impregnated with molten Si by maintaining the furnace heated to 1645 ° C. for 22 hours. As a result, a SiC / Si composite material having a SiC filling rate of 96% by volume was obtained.
そして、実施例1と同様に、このSiC/Si複合材料体から試験片を作製し、試験片の接合を試みた。しかし、全く接合していなかった。なお、SiC/Si複合材料体(母材)の四点曲げ強度は250MPaであった。 And like Example 1, the test piece was produced from this SiC / Si composite material body, and joining of the test piece was tried. However, it was not joined at all. The four-point bending strength of the SiC / Si composite material (base material) was 250 MPa.
〔比較例2,3〕
比較例2,3として、2枚の試験片の接合面の表面粗さRaをともにそれぞれ0.12μm、0.18μmとしたこと以外は、実施例1と同様にして試験片の接合を試みた。しかし、接合部の四点曲げ強度はそれぞれ90MPa、40MPaであり、接合は不十分であった。
[Comparative Examples 2 and 3]
As Comparative Examples 2 and 3, the joining of the test pieces was tried in the same manner as in Example 1 except that the surface roughness Ra of the joining surface of the two test pieces was 0.12 μm and 0.18 μm, respectively. . However, the four-point bending strength of the joint was 90 MPa and 40 MPa, respectively, and the joint was insufficient.
〔比較例4,5〕
比較例4,5として、接合時の加熱温度をそれぞれ900℃、980℃としたこと以外は、実施例1と同様にして試験片の接合を試みた。しかし、比較例4,5では全く接合していなかった。
[Comparative Examples 4 and 5]
As Comparative Examples 4 and 5, the test pieces were joined in the same manner as in Example 1 except that the heating temperatures at the time of joining were 900 ° C. and 980 ° C., respectively. However, it was not joined at all in Comparative Examples 4 and 5.
〔比較例6〕
比較例6として、接合時の加熱温度を1450℃としたこと以外は、実施例1と同様にして試験片の接合を試みた。しかし、試験片から金属Siが溶出した。また、接合部の四点曲げ強度は80MPaであり、接合は不十分であった。
[Comparative Example 6]
As Comparative Example 6, joining of test pieces was attempted in the same manner as in Example 1 except that the heating temperature at the time of joining was 1450 ° C. However, metal Si eluted from the test piece. Further, the four-point bending strength of the joint was 80 MPa, and the joint was insufficient.
〔比較例7,8〕
比較例7,8として、接合時の加熱加圧保持時間をそれぞれ0.5時間、15時間としたこと以外は、実施例1と同様にして試験片の接合を試みた。しかし、接合部の四点曲げ強度はそれぞれ90MPa、180MPaであり、接合は不十分であった。また、比較例8では、接合部に欠陥が発生した。これは、長時間加熱したことにより、Siが蒸発したためであると考えられる。
[Comparative Examples 7 and 8]
As Comparative Examples 7 and 8, a test piece was tried to be joined in the same manner as in Example 1 except that the heating and pressurizing holding times at the time of joining were 0.5 hours and 15 hours, respectively. However, the four-point bending strength of the joint was 90 MPa and 180 MPa, respectively, and the joint was insufficient. In Comparative Example 8, a defect occurred in the joint. This is considered to be because Si evaporated by heating for a long time.
〔比較例9,10〕
比較例9,10として、接合時の加圧力をそれぞれ0.01MPa、10.5MPaとしたこと以外は、実施例1と同様にして試験片の接合を試みた。しかし、比較例9では全く接合していなかった。また、比較例10では、接合部の四点曲げ強度は300MPaであったが、基材にクラックが発生した。
[Comparative Examples 9 and 10]
As Comparative Examples 9 and 10, joining of test pieces was attempted in the same manner as in Example 1 except that the pressure applied during joining was 0.01 MPa and 10.5 MPa, respectively. However, in Comparative Example 9, it was not joined at all. In Comparative Example 10, the four-point bending strength of the joint was 300 MPa, but cracks occurred in the base material.
Claims (6)
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| EP4317111A4 (en) * | 2021-03-29 | 2025-04-09 | Kyocera Corporation | Method for producing assembly |
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