JP2013074249A - Semiconductor package, and method for manufacturing semiconductor package - Google Patents

Abstract

A semiconductor package (P) capable of reducing cost and size while ensuring versatility of a high-frequency power amplifier.
A pair of high-frequency substrates (130) provided between a ground conductor (131), a two-layer high-frequency substrate (130) provided on the ground conductor (131), and an upper layer of the high-frequency substrate (130). A semiconductor package (P) is provided that includes a conductor (134). In addition, a high frequency power amplifier (100) including the semiconductor package (P) is provided.
[Selection] Figure 4

Description

  The present invention relates to a semiconductor package and a method for manufacturing a semiconductor package.

  In the field of wireless communication, higher frequency and lower distortion of frequency are being promoted from the demand for effective use of radio frequency, higher speed of information communication, and higher capacity. In addition, a reduction in power consumption is desired because of demands for reducing power consumption of communication devices. Under such circumstances, high functionality (high frequency, low distortion, low power consumption) of a wireless communication system and a power amplification module used in the wireless communication system is required. About the power amplification module used for such a radio | wireless communications system, there exists description in the following patent documents 1-3, for example.

JP 2009-165037 A JP 2005-303771 A JP 2008-112810 A

  In general, when high output power is required, a plurality of power amplifiers (semiconductor devices) are mounted on the power amplification module. Such a power amplification module has a mechanism for obtaining high output power by combining power amplified by a plurality of power amplifiers. In addition, the power amplification modules described in Patent Documents 1 and 2 above are equipped with not only a plurality of power amplifiers but also a circuit for adjusting the phase and amplitude in order to achieve the high functionality as described above. It realizes functions like Doherty amplifier and push-pull amplifier. Further, the power amplification module described in Patent Document 3 described above is also devised for the configuration of a semiconductor package that houses a power amplification element in order to extract the performance of the power amplifier.

  However, if multiple power amplifiers that operate differently, such as Doherty amplifiers and push-pull amplifiers, are installed and the circuit configuration is such that the power amplified by the multiple power amplifiers is combined, the area of the circuit board will increase. There's a problem. The Doherty amplifier and the push-pull amplifier each operate by converting the phase of the power amplifier by the phase conversion circuit. For example, in the case of the power amplification module described in Patent Document 2, the phase conversion is performed in the semiconductor package. The circuit has also been incorporated. When such a semiconductor package configuration is used, there is a problem that versatility is reduced and the cost is increased.

  Therefore, the present invention has been made in view of the above problems, and an object of the present invention is a new and improved device capable of reducing the cost and size while ensuring the versatility of the power amplifier. Another object is to provide a semiconductor package and a method for manufacturing the semiconductor package.

  In order to solve the above-described problem, according to one aspect of the present invention, a ground conductor, a two-layer high-frequency substrate provided on the ground conductor, and a pair provided so as to sandwich the upper-layer high-frequency substrate. A semiconductor package is provided.

  The semiconductor package includes a pair of connection terminals connected to each of the pair of conductors provided so as to sandwich the high-frequency substrate in the upper layer, and the other of the pair of contact terminals provided in contact with the high-frequency substrate in the lower layer. It may further include a matching circuit board connected to the conductor via a wire, and a semiconductor element connected to the matching circuit board via a wire.

  Further, the connection terminal may be connected to a phase conversion circuit outside the semiconductor package.

  The semiconductor package may include a pair of the semiconductor elements. Further, the two-layer high-frequency substrate, the pair of conductors, the pair of connection terminals, and the matching circuit substrate may be provided for each of the semiconductor elements.

  The semiconductor package may be a power amplifier that forms part of a Doherty amplifier and / or a push-pull amplifier.

  In order to solve the above-mentioned problem, according to another aspect of the present invention, a step of installing a first conductor on a lower-layer high-frequency substrate, and an upper-layer high-frequency substrate are installed on the first conductor. There is provided a method for manufacturing a semiconductor package, including a step, a step of installing a second conductor on the upper-layer high-frequency substrate, and a step of connecting the lower-layer high-frequency substrate to a ground conductor.

  The method for manufacturing a semiconductor package includes a step of connecting a frame on the ground conductor, a step of connecting a first connection terminal to the first conductor, and a second connection to the second conductor. And a step of connecting the terminals.

  Further, the first and second connection terminals may be connected to a phase conversion circuit outside the semiconductor package.

  As described above, according to the present invention, it is possible to provide a semiconductor package capable of reducing cost and size while ensuring versatility of a power amplifier.

It is explanatory drawing which showed the structural example of the conventional high frequency power amplifier. It is explanatory drawing which showed the structural example of the high frequency power amplifier of this embodiment. It is explanatory drawing which showed the structural example of the semiconductor package of this embodiment. It is explanatory drawing which showed the structural example of the semiconductor package of this embodiment. It is explanatory drawing which showed the structural example of the semiconductor package of this embodiment. It is explanatory drawing which showed the manufacturing process of the semiconductor package of this embodiment. It is explanatory drawing which showed the structural example of the semiconductor package which concerns on the modification of this embodiment.

  Exemplary embodiments of the present invention will be described below in detail with reference to the accompanying drawings. In addition, in this specification and drawing, about the component which has the substantially same function structure, duplication description is abbreviate | omitted by attaching | subjecting the same code | symbol.

[About the flow of explanation]
Here, the flow of explanation regarding the embodiment of the present invention described below will be briefly described. First, a configuration example of a conventional high-frequency power amplifier 10 will be described with reference to FIG. Next, a configuration example of the high-frequency power amplifier 100 according to the present embodiment and a configuration example of the semiconductor package P will be described with reference to FIG. Next, the structure of the semiconductor package P according to this embodiment will be described with reference to FIGS. Next, the manufacturing process of the semiconductor package P according to this embodiment will be described with reference to FIG. Next, the structure of the semiconductor package P according to a modification of the present embodiment will be described with reference to FIG.

<1: Conventional Example (Configuration Example of High-Frequency Power Amplifier 10)>
First, the configuration of a conventional high-frequency power amplifier 10 will be described with reference to FIG. The configuration of the high-frequency power amplifier 10 shown in FIG. 1 is an example of a circuit configuration of a general Doherty amplifier or push-pull amplifier.

  As shown in FIG. 1, the high-frequency power amplifier 10 includes a power distributor 11, capacitors 12A and 12B, DC power supplies 13A and 13B, phase conversion circuits 14A and 14B, matching circuits 15A and 15B, semiconductor devices 16A and 16B, and a matching circuit. 17A and 17B, phase conversion circuits 18A and 18B, DC power supplies 19A and 19B, capacitors 20A and 20B, and a power combiner 21.

  The RF signals distributed by the power distributor 11 are input to the capacitors 12A and 12B, respectively. The outputs of the capacitors 12A and 12B are connected to the inputs of the phase conversion circuits 14A and 14B, respectively. DC power supplies 13A and 13B are connected to lines connecting the outputs of the capacitors 12A and 12B and the inputs of the phase conversion circuits 14A and 14B, respectively. The outputs of the phase conversion circuits 14A and 14B are connected to the inputs of the matching circuits 15A and 15B, respectively. The outputs of the matching circuits 15A and 15B are connected to the inputs of the semiconductor devices 16A and 16B, respectively. These semiconductor devices 16A and 16B are power amplifiers.

  The outputs of the semiconductor devices 16A and 16B are connected to the inputs of the matching circuits 17A and 17B, respectively. The outputs of the matching circuits 17A and 17B are connected to the inputs of the phase conversion circuits 18A and 18B, respectively. The outputs of the phase conversion circuits 18A and 18B are connected to the inputs of the capacitors 20A and 20B, respectively. DC power supplies 19A and 19B are connected to lines connecting the outputs of the phase conversion circuits 18A and 18B and the inputs of the capacitors 20A and 20B, respectively. Also, the RF signals output from the capacitors 20A and 20B are input to the power combiner 21 and are combined and output.

  The configuration of the conventional high frequency power amplifier 10 has been described above. In the case of a Doherty amplifier, the phase difference of the RF signal is adjusted to 90 degrees, and in the case of a push-pull amplifier, the phase difference of the RF signal is adjusted to 180 degrees. When the high frequency power amplifier 10 having such a configuration is used as a semiconductor package, the phase conversion circuits 14A, 14B, 18A, and 18B must be included in the semiconductor package. For this reason, the semiconductor package constituting the conventional high-frequency power amplifier 10 has low versatility, is difficult to miniaturize, and is expensive. The high-frequency power amplifier 100 according to this embodiment and the semiconductor package P forming the same solve the above-described conventional problems.

<2: Embodiment>
Hereinafter, an embodiment of the present invention will be described. The present embodiment relates to a high-frequency power amplifier used in a wireless communication system and the like, and more particularly, to a structure of a semiconductor package that houses a plurality of semiconductor devices.

[2-1: Configuration Example of High Frequency Power Amplifier 100]
As shown in FIG. 2, the high-frequency power amplifier 100 according to this embodiment includes a power distributor 101, phase conversion circuits 102A and 102B, capacitors 103A and 103B, DC power supplies 104A and 104B, matching circuits 105A and 105B, and a semiconductor device 106A. And 106B, matching circuits 107A and 107B, DC power supplies 108A and 108B, capacitors 109A and 109B, phase conversion circuits 110A and 110B, and a power combiner 111. In addition, the connection relation of each component is as shown in FIG.

  The main difference between the conventional high-frequency power amplifier 10 shown in FIG. 1 and the high-frequency power amplifier 100 according to this embodiment shown in FIG. 2 is the connection relationship of the phase conversion circuits 102A, 102B, 110A, and 110B. As shown in FIG. 2, in the high frequency power amplifier 100 according to the present embodiment, the phase conversion circuits 102A and 102B are provided immediately after the power distributor 101, and the phase conversion circuits 110A and 110B are immediately before the power combiner 111. Is provided. Therefore, the phase conversion circuits 102A, 102B, 110A, and 110B can be provided outside the semiconductor package P.

  In other words, the present embodiment includes capacitors 103A and 103B, DC power supplies 104A and 104B, matching circuits 105A and 105B, semiconductor devices 106A and 106B, matching circuits 107A and 107B, DC power supplies 108A and 108B, and capacitors 109A and 109B. The semiconductor package P can be configured. Since the phase conversion circuits 102A, 102B, 110A, and 110B can be installed outside the semiconductor package P, the circuit configuration can be changed without requiring redesign in the semiconductor package P. As a result, the versatility of the high-frequency power amplifier 100 is improved.

[2-2: Structure of semiconductor package P]
Next, the structure of the semiconductor package P according to the present embodiment will be described with reference to FIGS. FIG. 3 is a top view of the semiconductor package P according to the present embodiment. FIG. 4 is a side view of the semiconductor package P of FIG. 3 as viewed in the X direction. FIG. 5 is a cross-sectional view showing a cross section when the semiconductor package P of FIG. 3 is cut along the line II.

  First, referring to FIG. As shown in FIG. 3, the semiconductor package P includes a ground conductor 131 (heat sink), a matching circuit board 132, a semiconductor element 133 (power amplifier), a conductor 134, a frame 135, and a connection terminal 136 (lead). , And gold wire 137. As shown in FIGS. 4 and 5, the semiconductor package P further includes a high-frequency substrate 130. The housing of the semiconductor package P is constituted by a container formed by the ground conductor 131 and the frame 135.

  As shown in FIG. 3, two semiconductor elements 133 are provided on the ground conductor 131. A matching circuit board 132 is provided in front of each semiconductor element 133 and is electrically connected to each other via a gold wire 137. Similarly, a matching circuit board 132 is also provided at the subsequent stage of each semiconductor element 133 and is electrically connected to each other via a gold wire 137. Each matching circuit board 132 is electrically connected to a conductor 134 (lower-layer conductor 134 described later) through a gold wire 137.

  As shown in FIGS. 4 and 5, the semiconductor package P is provided with a two-layer high-frequency substrate 130 so as to sandwich a lower-layer conductor 134. Further, the connection terminals 136 are electrically connected to the upper and lower conductors 134, respectively. 4, a capacitor is formed by the upper and lower conductors 134 that sandwich the high-frequency substrate 130. A high frequency component flows through the upper conductor 134, and a high frequency component and a direct current component flow through the lower conductor 134. In this way, the capacitor is formed by the upper and lower conductors 134 so that the DC component does not leak outside the semiconductor package P.

  As described above, by providing the phase conversion circuits 110A and 110B outside the semiconductor package P, it is possible to improve versatility and reduce the size of the semiconductor package P. That is, the circuit configuration outside the semiconductor package P is changed without redesigning the inside of the package, regardless of the phase difference of 90 degrees necessary for the Doherty amplifier and the phase difference of 180 degrees necessary for the push-pull amplifier. Therefore, the versatility of the high-frequency power amplifier 100 is not impaired and the cost is reduced. Further, since the capacitor is formed by the pair of conductors 134 with the high-frequency substrate 130 sandwiched therebetween, further miniaturization including the capacitor in the semiconductor package P becomes possible.

[2-3: Manufacturing process of semiconductor package P]
Next, the manufacturing process of the semiconductor package P according to this embodiment will be described with reference to FIG. The connection of each component is realized by soldering or brazing.

  As shown in FIG. 6, first, the ground conductor 131 is prepared (step S1). At this time, a recess into which the high-frequency substrate 130 enters is processed as necessary for alignment and height adjustment. Next, a two-layer high-frequency substrate 130 (for example, a ceramic substrate) in which a connection portion to which a lead (connection terminal 136) and a gold wire 137 are connected is prepared, and a lower-layer conductor 134 is replaced with the two-layer high-frequency substrate 130 The upper conductor 134 is placed on the upper high-frequency substrate 130 (step S2). Next, the heat sink base material (ground conductor 131) prepared in step S1 is connected to the high-frequency substrate 130 prepared in step S2 (step S3). Next, the frame 135 is connected to the heat sink substrate (ground conductor 131) (step S4). Next, the lead (connection terminal 136) is connected to the upper and lower conductors 134 (step S5).

  The manufacturing process of the semiconductor package P according to this embodiment has been described above.

[2-4: Modification (Structure of Semiconductor Package P)]
Here, the structure of the semiconductor package P according to a modification of the present embodiment will be described with reference to FIG. The semiconductor package P shown in FIGS. 3 to 5 has a structure in which a high frequency component flows through the upper conductor 134 and a high frequency component and a direct current component flow through the lower conductor 134. However, with the structure of the semiconductor package P shown in FIG. 7, the high frequency component and the direct current component flow through the upper conductor 134 and the high frequency component flows through the lower conductor 134. Such modifications also belong to the technical scope of the present embodiment.

  As mentioned above, although preferred embodiment of this invention was described referring an accompanying drawing, it cannot be overemphasized that this invention is not limited to the example which concerns. It will be apparent to those skilled in the art that various changes and modifications can be made within the scope of the claims, and these are naturally within the technical scope of the present invention. Understood.

  For example, in the above description, a configuration in which a plurality of semiconductor elements are accommodated in the package has been described. However, even in a configuration in which one semiconductor element is accommodated in the package, a DC cut capacitor is provided in the package. The configuration contributes to downsizing. That is, in the semiconductor package P shown in FIGS. 3 to 5 and FIG. 7, a configuration in which the component corresponding to one semiconductor element 133 is omitted is also useful.

100 RF power amplifier 101 Power divider 102A, 102B Phase conversion circuit 103A, 103B Capacitor 104A, 104B DC power supply 105A, 105B Matching circuit 106A, 106B Semiconductor device 107A, 107B Matching circuit 108A, 108B DC power supply 109A, 109B Capacitor 110A, 110B Phase conversion circuit 111 Power combiner 130 High frequency substrate 131 Ground conductor 132 Matching circuit substrate 133 Semiconductor element 134 Conductor 135 Frame 136 Connection terminal 137 Gold wire

Claims (8)

A ground conductor;
A two-layer high-frequency substrate provided on the ground conductor;
A pair of conductors provided so as to sandwich the high-frequency substrate in the upper layer;
A semiconductor package comprising: A pair of connection terminals connected to each of the pair of conductors provided so as to sandwich the high-frequency substrate in the upper layer;
A matching circuit board connected via a wire to the other conductor provided in contact with the lower-layer high-frequency board;
A semiconductor element connected to the matching circuit board via a wire;
The semiconductor package according to claim 1, further comprising: The semiconductor package according to claim 2, wherein the connection terminal is connected to a phase conversion circuit outside the semiconductor package. Including a pair of the semiconductor elements;
The two-layer high-frequency substrate, the pair of conductors, the pair of connection terminals, and the matching circuit substrate are provided corresponding to the semiconductor elements, respectively. The semiconductor package described. The semiconductor package according to any one of claims 1 to 4, wherein the semiconductor package is a power amplifier that forms a part of a Doherty amplifier and / or a push-pull amplifier. Installing a first conductor on a lower high-frequency substrate;
Installing an upper high-frequency substrate on the first conductor;
Installing a second conductor on the upper high-frequency substrate;
Connecting the lower-layer high-frequency substrate to a ground conductor;
A method for manufacturing a semiconductor package, comprising: Connecting a frame on the ground conductor;
Connecting a first connection terminal to the first conductor;
Connecting a second connection terminal to the second conductor;
The method of manufacturing a semiconductor package according to claim 6, further comprising: The method of manufacturing a semiconductor package according to claim 7, wherein the first and second connection terminals are connected to a phase conversion circuit outside the semiconductor package.

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