JP2013073051A - Circuit board, manufacturing method thereof, and electronic apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a circuit board capable of reducing connection resistance, a manufacturing method thereof, and an electronic apparatus having the circuit board.SOLUTION: A circuit board comprises a device, a connection terminal, and a contact structure for electrically connecting these. The contact structure includes an Al metal layer disposed on the side of the connection terminal, an organic conductive layer disposed on the Al metal layer, and a conductive layer disposed on the organic conductive layer, which is in contact with the device.

Description

  The present technology relates to a circuit board including a contact structure that electrically connects an element such as an organic EL (Electro Luminescence) element and a connection terminal, and a manufacturing method thereof. Moreover, this technique is related with the electronic device provided with the said circuit board.

  In recent years, in the field of display devices that perform image display, display devices using current-driven optical elements, such as organic EL elements, whose light emission luminance changes according to the value of a flowing current have been developed as light-emitting elements of pixels. Is being promoted. Unlike a liquid crystal element or the like, the organic EL element is a self-luminous element. Therefore, a display device (organic EL display device) using an organic EL element does not require a light source (backlight), so that it can be made thinner and brighter than a liquid crystal display device that requires a light source. . In particular, when the active matrix method is used as the driving method, each pixel can be lighted on hold and power consumption can be reduced. Therefore, organic EL display devices are expected to become the mainstream of next-generation flat panel displays.

  As described above, the organic EL element emits light by supplying a current. For this reason, if the wiring resistance is high and the voltage drop across the wiring is large, the current flowing through the organic EL element fluctuates by the voltage drop and the display luminance also fluctuates. Therefore, it is necessary to use a metal having a low resistivity as the wiring material. In addition, since the largest current flows through the common electrode (cathode electrode) through which currents from a plurality of organic EL elements flow, a large voltage drop due to a large amount of current causes a reduction in display quality. End up. Therefore, in order to prevent an overall voltage drop of the circuit board, a contact for electrically connecting the connection terminal and the common electrode between the outside extraction terminal (connection terminal) and the region where the common electrode is disposed. It is considered to provide a structure (see, for example, Patent Document 1).

JP 2000-357484 A

  However, when Al or an Al alloy is used as the metal pattern in contact with the connection terminal in the contact structure, the surface of the metal pattern is likely to be oxidized. For this reason, when the contact structure is formed with the surface of the metal pattern being oxidized, the connection resistance between the common electrode and the connection terminal increases, which causes a problem that a large voltage drop occurs in the contact structure. It was.

  The present technology has been made in view of such problems, and a first object of the present technology is to provide a circuit board capable of reducing connection resistance and a manufacturing method thereof. A second object is to provide an electronic device including the circuit board.

  The circuit board of the present technology includes a contact structure that electrically connects an element and a connection terminal. The contact structure includes an Al-based metal layer provided on the connection terminal side, an organic conductive layer provided on the Al-based metal layer, and a conductive layer provided on the organic conductive layer and in contact with the element. . An electronic apparatus according to the present technology includes the circuit board described above.

  The circuit board manufacturing method of the present technology is a method of manufacturing a circuit board including an element and a contact structure that electrically connects the element and a connection terminal. In this manufacturing method, an Al-based metal layer electrically connected to a connection terminal is formed, an organic conductive layer is formed on the Al-based metal layer, and a conductive layer in contact with the element is further formed on the organic conductive layer. A step of forming a contact structure.

  In the circuit board of the present technology, the manufacturing method thereof, and the electronic device, in the contact structure, an organic conductive layer is provided on the Al-based metal layer, and the conductive layer is electrically connected to the Al-based metal layer via the organic conductive layer. It is connected to the. As described above, the organic conductive layer covers the surface of the Al-based metal layer, thereby suppressing the surface oxidation of the Al-based metal layer in the manufacturing process. Further, when the organic conductive layer itself includes at least a layer formed of the same material as the hole injection layer, the hole injection property in the contact structure is improved.

  According to the circuit board and the manufacturing method of the present technology, and the electronic device, the surface of the Al-based metal layer is covered with the organic conductive layer to suppress the surface oxidation of the Al-based metal layer in the manufacturing process. Connection resistance between the element and the connection terminal can be reduced. In addition, when the organic conductive layer itself includes at least a layer formed of the same material as the hole injection layer, the connection resistance between the element and the connection terminal can be further reduced.

1 is a schematic configuration diagram of a display device according to an embodiment of the present technology. It is a figure showing an example of the circuit structure of the pixel of FIG. It is a figure showing an example of the plane configuration in the display panel of FIG. It is a figure showing an example of the cross-sectional structure of the display panel of FIG. FIG. 2 is a diagram illustrating an example of a partial cross-sectional configuration of the display panel in FIG. 1. It is sectional drawing which shows an example of the manufacturing process of the circuit board of FIG. It is a perspective view showing the external appearance of the application example 1 of the light-emitting device of each said embodiment. (A) is a perspective view showing the external appearance seen from the front side of the application example 2, (B) is a perspective view showing the external appearance seen from the back side. 12 is a perspective view illustrating an appearance of application example 3. FIG. 14 is a perspective view illustrating an appearance of application example 4. FIG. (A) is a front view of the application example 5 in an open state, (B) is a side view thereof, (C) is a front view in a closed state, (D) is a left side view, and (E) is a right side view, (F) is a top view and (G) is a bottom view.

Hereinafter, embodiments of the present technology will be described in detail with reference to the drawings. The description will be given in the following order.

1. Embodiment 2. FIG. Application examples

<1. Embodiment>
[Constitution]
FIG. 1 illustrates a schematic configuration of a display device 1 according to an embodiment of the present technology. The display device 1 includes a display panel 10 and a drive circuit 20 that drives the display panel 10. The drive circuit 20 includes, for example, a timing generation circuit 21, a video signal processing circuit 22, a signal line drive circuit 23, a scanning line drive circuit 24, and a power supply line drive circuit 25.

(Display panel 10)
The display panel 10 has a plurality of pixels 11 two-dimensionally arranged over the entire display area 10 </ b> A of the display panel 10. The display panel 10 displays an image based on the video signal 20 </ b> A input from the outside when each pixel 11 is driven in an active matrix by the drive circuit 20. FIG. 2 illustrates an example of a circuit configuration of the pixel 11. The pixel 11 includes, for example, a pixel circuit 12 and an organic EL element 13. The organic EL element 13 has, for example, a configuration in which an anode electrode, an organic layer, and a cathode electrode are sequentially stacked. The anode electrode corresponds to an anode electrode 13A described later, the organic layer corresponds to an organic layer 13B described later, and the cathode electrode corresponds to a cathode electrode 13C described later.

  The pixel circuit 12 is constituted by, for example, a drive transistor Tr1, a write transistor Tr2, and a storage capacitor Cs, and has a circuit configuration of 2Tr1C. The write transistor Tr2 samples a voltage of a signal line DTL, which will be described later, and writes it to the gate of the drive transistor Tr1. The drive transistor Tr1 controls the current flowing through the organic EL element 13 according to the magnitude of the voltage written by the write transistor Tr2. The holding capacitor Cs holds a predetermined voltage between the gate and source of the driving transistor Tr1. Note that the pixel circuit 12 may have a circuit configuration different from the above-described 2Tr1C circuit configuration.

  The drive transistor Tr1 and the write transistor Tr2 are formed of, for example, an n-channel MOS thin film transistor (TFT (Thin Film Transistor)). Note that the type of TFT is not particularly limited, and may be, for example, an inverted staggered structure (so-called bottom gate type) or a staggered structure (top gate type). Further, the drive transistor Tr1 or the write transistor Tr2 may be a p-channel MOS type TFT.

  The display panel 10 includes a plurality of write lines WSL extending in the row direction, a plurality of signal lines DTL extending in the column direction, and a plurality of power supply lines DSL extending in the row direction. A pixel 11 is provided in the vicinity of the intersection of each signal line DTL and each write line WSL. Each signal line DTL is connected to an output end (not shown) of a signal line drive circuit 23 described later and the source or drain of the write transistor Tr2. Each write line WSL is connected to an output end (not shown) of a scanning line drive circuit 24 described later and a gate of the write transistor Tr2. Each power supply line DSL is connected to an output terminal (not shown) of a power supply that outputs a fixed voltage and the source or drain of the drive transistor Tr1.

  The gate of the write transistor Tr2 is connected to the write line WSL. The source or drain of the write transistor Tr2 is connected to the signal line DTL, and the terminal not connected to the signal line DTL among the source and drain of the write transistor Tr2 is connected to the gate of the drive transistor Tr1. The source or drain of the drive transistor Tr1 is connected to the power supply line DSL, and the terminal not connected to the power supply line DSL among the source and drain of the drive transistor Tr1 is connected to the anode of the organic EL element 13. One end of the storage capacitor Cs is connected to the gate of the drive transistor Tr1, and the other end of the storage capacitor Cs is connected to the source of the drive transistor Tr1 (terminal on the organic EL element 13 side in FIG. 2). That is, the storage capacitor Cs is inserted between the gate and source of the drive transistor Tr1.

  The display panel 10 further includes a cathode line CTL connected to the cathode of the organic EL element 13 as shown in FIG. The cathode line CTL is electrically connected to an external circuit (not shown) having a reference potential (for example, ground potential). FIG. 3 schematically illustrates an example of a planar configuration in the display panel 10. The cathode line CTL is, for example, a sheet-like electrode formed over the entire display area 10A as shown in FIG. Although not shown, the cathode line CTL may be a strip-like electrode formed in a strip shape corresponding to a pixel row or a pixel column. The cathode line CTL is connected to the plurality of organic EL elements 13 as described above. Therefore, the cathode line CTL is preferably made of a material having a low voltage drop when a large amount of current collected from the plurality of organic EL elements 13 flows.

  The display panel 10 further includes a contact structure 14 and connection terminals 15 in a frame region 10B corresponding to the periphery of the display region 10A, for example, as shown in FIG. The contact structure 14 is for electrically connecting the organic EL element 13 and the connection terminal 15. The details of the contact structure 14 and the connection terminal 15 are described together with the description of the structure in the display panel 10.

(Structure in the display panel 10)
Next, the structure in the display panel 10 will be described with reference to FIGS. FIG. 4 illustrates an example of a cross-sectional configuration of the display panel 10 in FIG. FIG. 5 illustrates an example of a cross-sectional configuration of the display panel 10 in FIG. For example, as shown in FIG. 4, the display panel 10 has a structure in which a circuit board 30 and a sealing substrate 40 are bonded together with a sealing layer 50 interposed therebetween.

  For example, as illustrated in FIG. 5, the circuit board 30 includes a pixel circuit 12, an organic EL element 13, a contact structure 14, and a connection terminal 15 on a support substrate 16. The pixel circuit 12, the organic EL element 13, the contact structure 14, and the connection terminal 15 are formed on the circuit substrate 30 on the sealing substrate 40 side. The sealing substrate 40 has a role of protecting the organic EL elements 13 and the like formed on the upper surface of the circuit board 30 (that is, the surface on the sealing substrate 40 side). Here, the circuit board 30 is configured to emit light generated in the organic EL element 13 toward the sealing substrate 40 side, and has a so-called top emission structure. Therefore, in the display panel 10, the upper surface of the sealing substrate 40 (that is, the surface opposite to the circuit substrate 30) is an image display surface.

  The pixel circuit 12 and the organic EL element 13 are disposed in the display region 10A, and the contact structure 14 and the connection terminal 15 are disposed in the frame region 10B. For example, as shown in FIG. 5, the organic EL element 13 includes an anode electrode 13A (first electrode) provided on the pixel circuit 12 side, an organic layer 13B provided on the anode electrode 13A, and an organic layer 13B. It has a cathode electrode 13C (second electrode) provided on top. For example, as shown in FIG. 5, the contact structure 14 includes an Al-based metal layer 14A provided on the connection terminal 15 side, an organic conductive layer 14B provided on the Al-based metal layer 14A, and an organic conductive layer 14B. And a semi-transmissive metal layer 14C (conductive layer) provided thereon.

  The circuit board 30 further includes an insulating layer 17 between the pixel circuit 12 and the organic EL element 13, for example, as shown in FIG. The insulating layer 17 is also provided between the contact structure 14 and the connection terminal 15. The insulating layer 17 is configured by, for example, stacking an insulating layer 17A and an insulating layer 17B. The circuit board 30 includes, for example, a light shielding layer 19 that blocks light emitted from the organic EL element 13 between the insulating layer 17A and the insulating layer 17B. The light shielding layer 19 is provided in order to prevent light emitted from the organic EL element 13 from being propagated through the circuit board 30 as stray light. The insulating layer 17 may be a single layer. Moreover, the light shielding layer 19 may be provided in a place different from the above.

  Both the organic EL element 13 and the contact structure 14 are provided on a common insulating layer 17. The pixel circuit 12 and the organic EL element 13 are connected to each other via a connection portion 18A that penetrates the insulating layer 17. Specifically, the drive transistor Tr1 in the pixel circuit 12 and the anode electrode 13A in the organic EL element 13 are connected to each other via the connection portion 18A. The connecting portion 18A may be formed integrally with the anode electrode 13A. The organic EL element 13 and the contact structure 14 are connected to each other via a cathode line CTL. Specifically, the cathode electrode 13C in the organic EL element 13 and the transflective metal layer 14C in the contact structure 14 are connected to each other via a cathode line CTL. The contact structure 14 and the connection terminal 15 are connected to each other via a connection portion 18B that penetrates the insulating layer 17. Specifically, the Al-based metal layer 14A in the contact structure 14 and one end of the connection terminal 15 are connected to each other via the connection portion 18B. That is, the contact structure 14 electrically connects the organic EL element 13 and the connection terminal 15 to each other. The connecting portion 18B may be formed integrally with the Al-based metal layer 14A. The other end of the connection terminal 15 is not covered with the insulating layer 17 or the like and is exposed on the upper surface of the display panel 10. The other end of the connection terminal 15 is provided, for example, at the end of the display panel 10 and is configured to be easily connected by a connector or the like.

  In the organic EL element 13, the anode electrode 13A injects holes into the organic layer 13B. The anode electrode 13A further has a function of reflecting light generated in the organic layer 13B to the cathode electrode 13C side. The anode electrode 13A is made of, for example, a material having a good hole injection property and a high reflectance. Examples of the “material having a good hole injection property and high reflectivity” include Al-based metals. Al-based metal is a concept including Al and Al alloy. The organic layer 13B emits light with brightness according to the amount of current flowing in the organic layer 13B. The organic layer 13B includes, for example, in order from the anode electrode 13A side, a hole injection layer that increases hole injection efficiency, a hole transport layer that increases hole transport efficiency to the light-emitting layer, which will be described later, and electrons and holes. It has a stacked structure in which a light emitting layer that emits light by recombination and an electron transport layer that increases the efficiency of electron transport to the light emitting layer are stacked. The cathode electrode 13C is for injecting electrons into the organic layer 13B. The cathode electrode 13C further has a property of transmitting light generated in the organic layer 13B. The cathode electrode 13C is made of a material having good electron injection properties and good light transmission properties. Examples of the “material with good electron injecting property and light transmitting property” include semi-transmissive metal materials such as MgAg.

  In the contact structure 14, the Al-based metal layer 14A is made of, for example, the above-described Al-based metal. For example, the Al-based metal layer 14A is formed together with the anode electrode 13A in the same process as the anode electrode 13A, and is formed with the same material and the same thickness as the anode electrode 13A. The organic conductive layer 14B is made of, for example, the same material as at least a part of the layers in the organic layer 13B, and preferably made of the same material as at least the hole injection layer in the organic layer 13B. ing. The organic conductive layer 14B is formed together with the organic layer 13B in, for example, at least a part of the formation process of the organic layer 13B. Preferably, the organic conductive layer 14B is made of the same material as at least the hole injection layer in the organic layer 13B. It is formed including layers of the same thickness. The organic conductive layer 14B preferably does not contain the same material as the light emitting layer in the organic layer 13B, and is preferably composed only of the same material as the hole injection layer in the organic layer 13B. The transflective metal layer 14C is a form of a light-transmitting conductive layer, and is made of a transflective metal material such as MgAg, for example. The transflective metal layer 14C is formed with the cathode electrode 13C in the same process as the cathode electrode 13C, for example, and is formed with the same material and the same thickness as the cathode electrode 13C.

  The cathode line CTL is made of a semi-transmissive metal material such as MgAg, for example, similarly to the semi-transmissive metal layer 14C. The cathode line CTL is formed together with the cathode electrode 13C in the same process as the cathode electrode 13C, for example, and is formed with the same material and the same thickness as the cathode electrode 13C. That is, it can be said that the cathode line CTL substantially covers the organic EL element 13 and the contact structure 14, and the cathode electrode 13C and the transflective metal layer 14C share the cathode line CTL.

(Drive circuit 20)
Next, the drive circuit 20 will be briefly described. As described above, the drive circuit 20 includes the timing generation circuit 21, the video signal processing circuit 22, the signal line drive circuit 23, the scanning line drive circuit 24, and the power supply line drive circuit 25 as shown in FIG. doing. The timing generation circuit 21 controls each circuit in the drive circuit 20 to operate in conjunction with each other. The timing generation circuit 21 outputs a control signal 21A to each circuit described above, for example, in response to (in synchronization with) the synchronization signal 20B input from the outside.

  The video signal processing circuit 22 corrects the digital video signal 20A input from the outside, converts the corrected video signal into analog, and outputs the analog signal to the signal line drive circuit 23. The signal line driving circuit 23 outputs the analog video signal input from the video signal processing circuit 22 to each signal line DTL in response to (in synchronization with) the input of the control signal 21A. The scanning line driving circuit 24 sequentially selects a plurality of write lines WSL for each predetermined unit in response to (in synchronization with) the input of the control signal 21A. For example, the power supply line drive circuit 25 sequentially selects a plurality of power supply lines DSL for each predetermined unit in response to (in synchronization with) the input of the control signal 21A. Note that the amount of current output from the connection terminal 15 via the contact structure 14 varies depending on the manner in which the power supply line DSL is selected by the power supply line drive circuit 25.

[Method for Manufacturing Circuit Board 30]
Next, an example of a method for manufacturing the circuit board 30 will be described. First, the pixel circuit 12 and the connection terminal 15 are formed on the support substrate 16 and covered with the insulating layer 17. At this time, the light shielding layer 19 is also formed in the insulating layer 17. Next, the anode electrode 13 </ b> A and the Al-based metal layer 14 </ b> A are formed on the insulating layer 17. Specifically, after forming a through hole in the insulating layer 17 and forming the connection portions 18A and 18B corresponding to the through holes, the anode electrode 13A is formed so as to contact the connection portion 18A, and the connection portion 18B An Al-based metal layer 14A is formed so as to be in contact (FIG. 6A). Thus, the Al-based metal layer 14A electrically connected to the connection terminal 15 is formed on the insulating layer 17 in the same step as the step of forming the anode electrode 13A electrically connected to the pixel circuit 12. be able to. In other words, the anode electrode 13A electrically connected to the pixel circuit 12 can be formed in the same process as the process of forming the Al-based metal layer 14A electrically connected to the connection terminal 15.

  Next, the organic layer 13B is formed on the anode electrode 13A using a mask (not shown) having an opening in a region corresponding to the anode electrode 13A. Further, at this time, in at least a part of the formation process of the organic layer 13B, a mask (not shown) having an opening also in a region corresponding to the Al-based metal layer 14A is used. An organic conductive layer 14B is formed thereon (FIG. 6B). For example, using a mask (not shown) having an opening in a region corresponding to the Al-based metal layer 14A in at least the same step as the formation process of the hole injection layer in the formation process of the organic layer 13B, An organic conductive layer 14B is formed on the layer 14A. In other words, the organic layer 13B is formed on the anode electrode 13A in a process including a process of forming the organic conductive layer 14B on the Al-based metal layer 14A. Note that the opening in the region corresponding to the anode electrode 13A and the opening in the region corresponding to the Al-based metal layer 14A may be configured as one common opening.

  Thereby, since the surface of the Al-based metal layer 14A is covered with the organic conductive layer 14B in the process of forming the organic layer 13B, it is possible to prevent the surface oxidation of the Al-based metal layer 14A from being promoted. In addition, when the organic conductive layer 14B itself includes at least a layer formed of the same material as the hole injection layer, the hole injection property in the contact structure 14 is improved. Therefore, due to these factors, the transflective metal layer 14C formed in a later step can be brought into contact with the surface of the Al-based metal layer 14A with low resistance.

  Next, the cathode line CTL is formed in a wide region including the organic layer 13B and the organic conductive layer 14B (a wide region including the display region 10A). Thereby, the transflective metal layer 14C can be formed on the organic conductive layer 14B in the same step as the step of forming the cathode electrode 13C on the organic layer 13B. In other words, the cathode electrode 13C can be formed on the organic layer 13B in the same step as the step of forming the transflective metal layer 14C on the organic conductive layer 14B. Furthermore, the organic EL element 13 and the contact structure 14 can be connected to each other through the cathode line CTL by the above-described process. As a result, the organic EL element 13 and the connection terminal 15 can be electrically connected to each other via the contact structure 14.

[effect]
Next, the effect in this Embodiment is demonstrated.

  By the way, the organic EL element supplies light to emit light. For this reason, if the wiring resistance is high and the voltage drop across the wiring is large, the current flowing through the organic EL element fluctuates by the voltage drop, and the display luminance also fluctuates. Therefore, it is necessary to use a metal having a low resistivity as the wiring material. In addition, since the largest current flows through the common electrode (cathode electrode) through which currents from a plurality of organic EL elements flow, a large voltage drop due to a large amount of current causes a reduction in display quality. End up. Therefore, conventionally, in order to prevent an overall voltage drop of the circuit board, the connection terminal and the common electrode are electrically connected between the external extraction terminal (connection terminal) and the region where the common electrode is disposed. It has been practiced to provide a contact structure for connection.

  However, when Al or an Al alloy is used as the metal pattern in contact with the connection terminal in the contact structure, the surface of the metal pattern is likely to be oxidized. For this reason, when the contact structure is formed with the surface of the metal pattern being oxidized, the connection resistance between the common electrode and the connection terminal increases, which causes a problem that a large voltage drop occurs in the contact structure. It was.

  On the other hand, in the present embodiment, in the contact structure 14, the organic conductive layer 14B is provided on the Al-based metal layer 14A, and the transflective metal layer 14C is connected to the Al-based metal layer 14A via the organic conductive layer 14B. Electrically connected. As described above, the organic conductive layer 14B covers the surface of the Al-based metal layer 14A, whereby the surface oxidation of the Al-based metal layer 14A in the manufacturing process can be suppressed. As a result, the connection resistance between the organic EL element 13 and the connection terminal 15 can be reduced. Furthermore, when the organic conductive layer 14B itself includes at least a layer formed of the same material as the hole injection layer, the hole injection property in the contact structure 14 can be improved. As a result, the connection resistance between the organic EL element 13 and the connection terminal 15 can be further reduced.

<2. Application example>
Hereinafter, application examples of the display device 1 described in the above embodiment will be described. The display device 1 according to the above embodiment is a television device, a digital camera, a notebook personal computer, a mobile terminal device such as a mobile phone, or a video camera, such as an externally input video signal or an internally generated video signal. The present invention can be applied to display devices for electronic devices in various fields that display images or videos.

(First application example)
FIG. 7 illustrates an appearance of a television device to which the display device 1 of the above embodiment is applied. The television apparatus has, for example, a video display screen unit 300 including a front panel 310 and a filter glass 320, and the video display screen unit 300 is configured by the display device 1 according to the above embodiment. .

(Second application example)
FIG. 8 shows the appearance of a digital camera to which the display device 1 of the above embodiment is applied. The digital camera includes, for example, a flash light emitting unit 410, a display unit 420, a menu switch 430, and a shutter button 440. The display unit 420 is configured by the display device 1 according to the above embodiment. Yes.

(Third application example)
FIG. 9 shows an appearance of a notebook personal computer to which the display device 1 of the above embodiment is applied. The notebook personal computer has, for example, a main body 510, a keyboard 520 for inputting characters and the like, and a display unit 530 for displaying an image. The display unit 530 is a display device according to the above embodiment. 1.

(Fourth application example)
FIG. 10 shows the appearance of a video camera to which the display device 1 of the above embodiment is applied. This video camera has, for example, a main body 610, a subject photographing lens 620 provided on the front side surface of the main body 610, a start / stop switch 630 at the time of photographing, and a display 640. Reference numeral 640 denotes the display device 1 according to the above embodiment.

(Fifth application example)
FIG. 11 shows the appearance of a mobile phone to which the display device 1 of the above embodiment is applied. For example, the mobile phone is obtained by connecting an upper housing 710 and a lower housing 720 with a connecting portion (hinge portion) 730, and includes a display 740, a sub-display 750, a picture light 760, and a camera 770. Yes. The display 740 or the sub-display 750 is configured by the display device 1 according to the above embodiment.

  While the present technology has been described with the embodiment and application examples, the present technology is not limited to the above-described embodiment and the like, and various modifications are possible.

  For example, the present technology is not limited to the material and thickness of each layer described in the above embodiment, the film formation method and the film formation conditions, and may be other materials and thicknesses, or other film formation. It is good also as a method and film-forming conditions.

  In each of the above embodiments, the configuration of the pixel circuit 12 for active matrix driving is not limited to that described in each of the above embodiments, and a capacitor or a transistor may be added as necessary. In that case, necessary drive circuits may be added in addition to the signal line drive circuit 23, the scanning line drive circuit 24, the power supply line drive circuit 25, and the like described above in accordance with the change of the pixel circuit 12.

For example, this technique can take the following composition.
(1)
Provided with a contact structure for electrically connecting the element and the connection terminal,
The contact structure is:
An Al-based metal layer provided on the connection terminal side;
An organic conductive layer provided on the Al-based metal layer;
A circuit board having a conductive layer provided on the organic conductive layer and in contact with the element.
(2)
The element and the contact structure are provided on a common insulating layer,
The element includes a first electrode layer made of the same material as the Al-based metal layer, an organic layer provided on the first electrode layer, and provided on the organic layer and also serves as the conductive layer. The circuit board according to (1), further comprising: a second electrode layer.
(3)
The organic layer has a hole injection layer, a hole transport layer, a light emitting layer and an electron transport layer,
The circuit board according to (2), wherein the organic conductive layer is made of at least the same material as the hole injection layer in the organic layer.
(4)
The circuit board according to any one of (1) to (3), wherein the conductive layer has optical transparency.
(5)
With a circuit board,
The circuit board has a contact structure for electrically connecting the element and the connection terminal,
The contact structure is:
An Al-based metal layer provided on the connection terminal side;
An organic conductive layer provided on the Al-based metal layer;
An electronic device comprising: a conductive layer provided on the organic conductive layer and in contact with the element.
(6)
A method of manufacturing a circuit board comprising an element and a contact structure for electrically connecting the element and a connection terminal,
An Al-based metal layer electrically connected to the connection terminal is formed, an organic conductive layer is formed on the Al-based metal layer, and a conductive layer in contact with the element is further formed on the organic conductive layer. A method for manufacturing a circuit board, wherein the contact structure is formed.
(7)
The element and the contact structure are provided on a common insulating layer,
Forming the first electrode layer made of the same material as the Al-based metal layer in the same step as the forming step of the Al-based metal layer, and including the step of forming the organic conductive layer; An organic layer is formed on the layer, and a second electrode layer also serving as the conductive layer is formed on the organic layer in the same step as the step of forming the conductive layer. The method for manufacturing a circuit board according to (6) .
(8)
The organic layer includes a hole injection layer that increases hole injection efficiency, a hole transport layer that increases hole transport efficiency, a light emitting layer that generates light emission by recombination of electrons and holes, and an electron transport efficiency. An electron transport layer to enhance,
The method for manufacturing a circuit board according to (6) or (7), wherein the organic conductive layer is formed in at least the same step as the formation step of the hole injection layer in the formation step of the organic layer.

  DESCRIPTION OF SYMBOLS 1 ... Display apparatus, 10 ... Display panel, 10A ... Display area, 10B ... Frame area, 11 ... Pixel, 12 ... Pixel circuit, 13 ... Organic EL element, 13A ... Anode electrode, 13B ... Organic layer, 13C ... Cathode electrode, DESCRIPTION OF SYMBOLS 14 ... Contact structure, 14A ... Al type metal layer, 14B ... Organic conductive layer, 14C ... Transflective metal layer, 15 ... Connection terminal, 16 ... Support substrate, 17, 17A, 17B ... Insulating layer, 18A, 18B ... Connection , 19 ... light shielding layer, 20 ... drive circuit, 20A ... video signal, 20B ... synchronization signal, 21 ... timing generation circuit, 21A ... control signal, 22 ... video signal processing circuit, 23 ... signal line drive circuit, 24 ... writing Lead-in line drive circuit, 25 ... Power line drive circuit, 30 ... Circuit board, 40 ... Sealing substrate, 50 ... Sealing layer, 300 ... Video display screen section, 310 ... Front panel, 320 ... Filter 410, light emitting section, 420, 530, 640 ... display section, 430 ... menu switch, 440 ... shutter button, 510 ... main body, 520 ... keyboard, 610 ... main body section, 620 ... lens, 630 ... start / stop switch, 710 ... Upper housing, 720 ... Lower housing, 730 ... Connector, 740 ... Display, 750 ... Sub-display, 760 ... Picture light, 770 ... Camera, Cs ... Retention capacity, CTL ... Cathode wire, DTL ... Signal wire DSL ... power supply line, Tr1 ... drive transistor, Tr2 ... write transistor, WSL ... scanning line.

Claims (8)

Provided with a contact structure for electrically connecting the element and the connection terminal,
The contact structure is:
An Al-based metal layer provided on the connection terminal side;
An organic conductive layer provided on the Al-based metal layer;
A circuit board having a conductive layer provided on the organic conductive layer and in contact with the element. The element and the contact structure are provided on a common insulating layer,
The element includes a first electrode layer made of the same material as the Al-based metal layer, an organic layer provided on the first electrode layer, and provided on the organic layer and also serves as the conductive layer. The circuit board according to claim 1, further comprising: a second electrode layer. The organic layer has a hole injection layer, a hole transport layer, a light emitting layer and an electron transport layer,
The circuit board according to claim 2, wherein the organic conductive layer is made of at least the same material as the hole injection layer in the organic layer. The circuit board according to claim 2, wherein the conductive layer has optical transparency. With a circuit board,
The circuit board has a contact structure for electrically connecting the element and the connection terminal,
The contact structure is:
An Al-based metal layer provided on the connection terminal side;
An organic conductive layer provided on the Al-based metal layer;
An electronic device comprising: a conductive layer provided on the organic conductive layer and in contact with the element. A method of manufacturing a circuit board comprising an element and a contact structure for electrically connecting the element and a connection terminal,
An Al-based metal layer electrically connected to the connection terminal is formed, an organic conductive layer is formed on the Al-based metal layer, and a conductive layer in contact with the element is further formed on the organic conductive layer. A method for manufacturing a circuit board, wherein the contact structure is formed. The element and the contact structure are provided on a common insulating layer,
Forming the first electrode layer made of the same material as the Al-based metal layer in the same step as the forming step of the Al-based metal layer, and including the step of forming the organic conductive layer; The method for manufacturing a circuit board according to claim 6, wherein an organic layer is formed on the layer, and a second electrode layer that also serves as the conductive layer is formed on the organic layer in the same step as the conductive layer forming step. . The organic layer includes a hole injection layer that increases hole injection efficiency, a hole transport layer that increases hole transport efficiency, a light emitting layer that generates light emission by recombination of electrons and holes, and an electron transport efficiency. An electron transport layer to enhance,
The method for manufacturing a circuit board according to claim 6, wherein the organic conductive layer is formed in at least the same step as the formation step of the hole injection layer in the formation step of the organic layer.

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