JP2013055170A - Spontaneous light emitting display and method of manufacturing spontaneous light emitting display - Google Patents

Abstract

A self-luminous display capable of emitting more light out of light emitted from a light emitting unit in a normal direction of a substrate.
A plurality of columnar light emitting portions 104 are arranged on a substrate 101 with a space therebetween. Each light emitting unit 104 includes a first conductivity type semiconductor 107 and a second conductivity type semiconductor 108. A low refractive index body 106 having a refractive index lower than that of the light emitting unit 104 is disposed so as to be in contact with the side wall of each light emitting unit 104.
[Selection] Figure 2

Description

  The present invention relates to a self-luminous display and a method for manufacturing the self-luminous display.

  Conventionally, as a self-luminous display, there is an LED display described in JP-A-7-288341 (Patent Document 1). This LED display has a plurality of LED chips, and the plurality of LED chips are mounted on a substrate.

  40 and 41 are diagrams for explaining the structure of the LED display.

  As shown in FIGS. 40 and 41, in this LED display, a blue LED chip B, a green LED chip G, and a red LED chip R are mounted on a printed board 1 by wire bonding. A set of blue LED chip B, green LED chip G, and red LED chip R constitutes one pixel, and the light emitted from them is mixed to determine the light color of the pixel.

  In the conventional LED display, a cover member 3 is disposed around a set of blue LED chip B, green LED chip G, and red LED chip R constituting one pixel, and an LED display is provided on the inner surface of the cover member 3. In order to improve the brightness, a reflecting mirror is formed. A considerable amount of light generated from each LED chip is emitted at a large angle with respect to the vertical direction of the substrate. In the conventional LED display, by arranging such a cover member 3, light emitted at a large angle with respect to the vertical direction of the substrate is reflected in the vertical direction of the substrate.

JP 7-288341 A

  In the above conventional LED display, light emitted at a large angle with respect to the vertical direction of the substrate is reflected by the cover member 3 arranged at intervals with respect to each LED. There is a problem that the propagation area in the parallel direction becomes large, and the reduction of light having a large angle with respect to the vertical direction of the substrate is not sufficient.

  Accordingly, an object of the present invention is to provide a self-luminous display that can radiate more of the light emitted by the light emitting unit in the normal direction of the substrate.

In order to solve the above problems, the self-luminous display of the present invention is
A substrate,
A plurality of columnar light emitting portions disposed on the substrate at intervals,
Each of the light emitting units includes a first conductivity type semiconductor and a second conductivity type semiconductor,
The low-refractive-index body which contacts the side wall of each said light emission part and has a refractive index lower than the refractive index of the said light emission part is provided.

  The refractive index of the light emitting part is defined as the lowest refractive index among the refractive indexes of the substances constituting the light emitting part.

  According to the present invention, the light generated inside the light emitting unit is in contact with the side walls of the light emitting units discretely arranged on the substrate because the low refractive index body having a refractive index smaller than that of the semiconductor constituting the light emitting unit is in contact. However, when the light enters the low refractive index body at an angle larger than the critical angle, the incident light is totally reflected at the interface between the light emitting section and the low refractive index body and stays inside the light emitting section, and finally the upper part of the light emitting section. Will be emitted from. Therefore, light leakage from a certain pixel to an adjacent pixel is suppressed, and blurring of an image can be reduced. Furthermore, since the amount of light emission can be suppressed by the amount of light leakage, the power consumption of the self-luminous display can be suppressed.

In one embodiment,
The upper surface of the light emitting part opposite to the substrate side is in contact with a high refractive index body that is larger than the low refractive index body.

  According to the above-described embodiment, most of the light generated inside the light emitting unit can be totally reflected by the side wall of the light emitting unit, while the upper surface of the light emitting unit can prevent the light from being totally reflected, and much light is emitted. It can be easily taken out above the portion. Therefore, light leakage from a certain pixel to an adjacent pixel can be suppressed, blurring of an image can be reduced, light emission efficiency of the pixel can be improved, and power consumption of the self-luminous display can be suppressed.

In one embodiment,
A plurality of first wirings disposed on the substrate and extending in a first direction at intervals from each other;
A plurality of second wirings disposed on the plurality of light emitting units and extending in a second direction at intervals from each other;
The first conductivity type semiconductor faces the second conductivity type semiconductor in the normal direction of the substrate,
The first conductivity type semiconductor of each light emitting unit is electrically connected to any one of the plurality of first wirings, while the second conductivity type semiconductor of each light emitting unit is , Electrically connected to any one of the plurality of second wirings,
Passive drive.

  According to the above embodiment, the structure of the self-luminous display can be simplified, and the manufacturing process can be reduced. In addition, since the columnar light emitting portion is formed by sequentially laminating the first conductive type semiconductor and the second conductive type semiconductor from the substrate side, the first wiring formed on the substrate and the first conductive type semiconductor Can be easily connected, and the second wiring formed on the light emitting portion and the second semiconductor can be easily connected.

In one embodiment,
Each said 2nd wiring is a transparent electrode.

  According to the above embodiment, the light from the light emitting unit is not blocked by the wiring formed on the upper surface of the light emitting unit, so that the light emission efficiency can be improved and the power consumption of the self light emitting display is suppressed. be able to.

In one embodiment,
The light emitting unit is made of an inorganic semiconductor.

  According to the embodiment, since it is easy to increase the emission intensity as compared with the organic semiconductor, it is possible to easily cope with an increase in screen size and an increase in pixels.

In one embodiment,
A common transparent electrode formed on the plurality of light emitting portions and electrically connecting the second conductivity type semiconductors of the plurality of light emitting portions;
A driving transistor disposed on the substrate and having a gate and a drain electrically connected to the first conductivity type semiconductor of the light emitting unit;
A switching transistor having a drain electrically connected to the gate of the driving transistor,
Actively driven.

  According to the above embodiment, since each pixel is actively driven, the driving voltage can be lowered, the life of the light emitting unit can be extended, and interference between pixels can be effectively prevented.

In one embodiment,
The light emitting unit has a GaN layer.

  According to the embodiment, since the light emitting unit has a GaN layer having a high refractive index of about 2.4, the difference in refractive index between the GaN layer and the low refractive index body in contact with the side wall can be increased. Thus, leakage of light from the side wall of the light emitting portion can be efficiently suppressed, and bleeding of the image can be reduced.

In one embodiment,
The light emitting unit includes an active layer made of any one of InGaN, AlGaN, or AlInGaN.

  According to the above embodiment, for example, the luminous efficiency can be significantly improved by sandwiching the active layer between the first conductivity type GaN layer and the second conductivity type GaN layer.

In one embodiment,
Comprising a crystalline conductive film pattern disposed on the substrate;
The light emitting part is disposed on the conductive film pattern,
The light emitting portion is made of a crystalline inorganic semiconductor.

  According to the above embodiment, the crystalline conductive film is formed on the substrate, and the light emitting portion made of the crystalline inorganic semiconductor is formed thereon. Therefore, the light emitting portions are collectively formed on the substrate by epitaxial growth. be able to. Therefore, it is not necessary to mount a plurality of light emitting units one by one on the substrate, and the number of steps can be greatly reduced.

In one embodiment,
The height of the light emitting part is larger than the width of the light emitting part.

  According to the embodiment, the contact area between the light emitting portion and the crystalline conductive film (first wiring) formed on the substrate can be reduced, and the light emitting layer (active layer) and the substrate are formed on the substrate. Since the distance between the crystalline conductive film and the crystalline conductive film formed on the substrate can be increased, the crystal defect density in the vicinity of the light emitting layer due to the mismatch of the lattice constant between the light emitting portion and the crystalline conductive film formed on the substrate can be reduced. The light emission efficiency of the light emitting unit can be increased, and the power consumption of the self light emitting display can be suppressed.

In one embodiment,
The crystalline conductive film pattern is made of silicon or a laminated film obtained by sequentially laminating silicon and GaN from the substrate side,
The light emitting unit has a GaN layer.

  Silicon crystalline films can be easily formed on many substrates, and GaN crystals can be grown on silicon crystalline films. Further, if a GaN crystalline film is formed on the silicon crystalline film, the crystallinity of GaN constituting the light emitting portion can be improved, and the light emission efficiency of the light emitting portion can be improved. According to the above embodiment, a highly efficient light emitting part can be formed at low cost, and the power consumption of the self light emitting display can be suppressed.

In one embodiment,
The nanoparticle phosphor is disposed at a position where the light emitted from the light emitting unit can reach.

  According to the above-described embodiment, the phosphor can be easily applied, and it is possible to realize high definition of pixels and uniform color development of pixels.

In one embodiment, each of the light emitting units is a part of a blue pixel, a green pixel, or a red pixel.
Each of the light emitting units emits blue light,
The green pixel has a phosphor that converts blue light generated in the light emitting unit into green light,
The red pixel has a phosphor that converts blue light generated in the light emitting unit into red light.

  According to the embodiment, since the blue pixel, the green pixel, and the red pixel are provided, colorization can be realized. Also, the light emitting part emits blue light, the green pixel is provided with a green phosphor that converts blue light to green light and converted to green light, and the red pixel is provided with a red phosphor that converts blue light into red light. Therefore, it is not necessary to provide three types of light emitting units, and colorization can be realized with one type of light emitting unit. Further, since the blue pixel uses the blue color generated in the light emitting portion as it is, the number of phosphors can be reduced to two.

In one embodiment,
Each light emitting unit is a part of a blue pixel, a green pixel, or a red pixel,
Each light emitting part emits ultraviolet light,
The blue pixel has a phosphor that converts ultraviolet light generated in the light emitting unit into blue light,
The green pixel has a phosphor that converts ultraviolet light generated in the light emitting unit into green light,
The red pixel has a phosphor that converts ultraviolet light generated in the light emitting unit into red light.

  According to the embodiment, since the blue pixel, the green pixel, and the red pixel are included, colorization can be realized. In addition, the light emitting part emits ultraviolet light, the blue pixel is provided with a blue phosphor that converts ultraviolet light into blue light and converted into blue light, and the green pixel is provided with a green phosphor that converts ultraviolet light into green light. In the red pixel, a red phosphor that converts ultraviolet light into red light is provided and converted into red light. Can be realized. Further, since each pixel converts the wavelength of ultraviolet light that cannot be seen by the eyes, it is easy to obtain monochromatic light and color reproducibility can be improved.

In one embodiment,
Each light emitting unit is a part of a blue pixel, a green pixel, a yellow pixel, or a red pixel,
The plurality of light emitting units emit blue light,
The green pixel has a phosphor that converts blue light generated in the light emitting unit into green light, and the yellow pixel has a phosphor that converts blue light generated in the light emitting unit into yellow light,
The red pixel has a phosphor that converts blue light generated in the light emitting unit into red light.

  According to the above embodiment, since the blue pixel, the green pixel, the yellow pixel, and the red pixel are included, colorization can be realized. In addition, since the so-called four primary colors can be used for color reproduction, the range of colors that can be expressed can be widened. The light emitting unit emits blue light, the green pixel is provided with a phosphor that converts blue light into green light and converted into green light, and the yellow pixel is provided with a phosphor that converts blue light into yellow light and yellow. In the red pixel, a phosphor that converts blue light into red light is provided for conversion into red light, so there is no need to provide four types of light emitting units, and one type of light emitting unit. Color can be realized with. In addition, since blue color generated in the light emitting portion is used as it is in a blue pixel, the types of phosphors can be reduced to three types.

In one embodiment,
Each light emitting unit is a part of a blue pixel, a green pixel, a yellow pixel, or a red pixel,
Each light emitting part emits ultraviolet light,
The blue pixel has a phosphor that converts ultraviolet light generated in the light emitting unit into green light,
The green pixel has a phosphor that converts ultraviolet light generated in the light emitting unit into green light,
The yellow pixel has a phosphor that converts ultraviolet light generated in the light emitting unit into yellow light,
The red pixel has a phosphor that converts ultraviolet light generated in the light emitting section into red light.

  According to the above embodiment, since the blue pixel, the green pixel, the yellow pixel, and the red pixel are included, colorization can be realized. Moreover, since so-called four primary colors are used, the range of colors that can be expressed can be widened. The light emitting part emits ultraviolet light, the blue pixel is provided with a phosphor that converts ultraviolet light into blue light and converted into blue light, and the green pixel is provided with a phosphor that converts ultraviolet light into green light and green. In the yellow pixel, a phosphor that converts ultraviolet light to yellow light is provided to convert to yellow light, and in a red pixel, a phosphor that converts ultraviolet light to red light is provided to convert to red light. Therefore, it is not necessary to provide four types of light emitting units, and colorization can be realized with one type of light emitting units. Further, since each pixel converts the wavelength of ultraviolet light that cannot be seen by the eyes, it is easy to obtain monochromatic light and color reproducibility can be improved.

In one embodiment,
Each of the light emitting units is a part of any one of a plurality of predetermined types of pixels,
Each light emitting unit emits light having a predetermined spectral distribution corresponding to the type of pixel to which the light emitting unit belongs.

  According to the embodiment, since a plurality of types of pixels are provided, colorization can be realized. In addition, each light emitting portion formed on the substrate emits light with a predetermined spectral distribution according to the corresponding type of pixel corresponding to any of the plurality of types of pixels, so that the phosphor for converting the wavelength There is no need to provide.

In addition, the method of manufacturing the self-luminous display of the present invention includes
A light emitting part position defining step for defining a plurality of positions spaced apart from each other to form a plurality of light emitting parts on the substrate;
Forming a light-emitting part that forms at least a part of the light-emitting part by sequentially epitaxially growing a first-conductivity-type semiconductor and a second-conductivity-type semiconductor at a position where each light-emitting part is formed on the substrate. An epitaxial process;
A low refractive index body having a refractive index lower than that of the first conductivity type semiconductor and lower than that of the second conductivity type semiconductor is brought into contact with the side wall portion of each light emitting portion. And a low-refractive-index body forming step arranged as described above.

  According to the present invention, the low refractive index body having a lower refractive index than the first semiconductor and the second semiconductor constituting the light emitting part is formed so as to be in contact with the side wall part of the light emitting part. When the incident light is incident on the low refractive index body at an angle larger than the critical angle, the light generated inside the light emitting section is totally reflected at the interface between the light emitting section and the low refractive index body to emit light. It stays in the inside of the part, and is finally emitted from the upper part of the light emitting part. Therefore, light leakage from a certain pixel to an adjacent pixel is suppressed, and blurring of an image can be reduced. Furthermore, since the amount of light emission can be suppressed by the amount of light leakage, the power consumption of the self-luminous display can be suppressed. Further, since the light emitting portions are collectively formed at a predetermined position on the substrate by epitaxial growth, it is not necessary to mount a plurality of light emitting portions on the substrate one by one, greatly increasing the manufacturing process. It can be simplified.

In one embodiment,
The light emitting portion position defining step includes a step of arranging metal catalyst particles at a predetermined position on the substrate,
The light emitting portion forming epitaxial step includes a step of epitaxially growing a semiconductor by a VLS method (Vapor Liquid Solid method) using the metal catalyst particles as a catalyst.

  According to the above embodiment, the light-emitting portion position defining step and the light-emitting portion formation epitaxial step can be suitably performed, and a light-emitting portion having good crystallinity can be easily formed. Further, since the VLS method using a catalyst is used for epitaxial growth, the process can be performed at a low temperature.

In one embodiment,
The light emitting portion position defining step includes a step of forming a mask having an opening connected to a predetermined position on the substrate on the substrate,
The light emitting portion formation epitaxial step includes a step of epitaxially growing a semiconductor in the opening.

  According to the above embodiment, the light-emitting portion position defining step and the light-emitting portion formation epitaxial step can be suitably performed, and a light-emitting portion having good crystallinity can be easily formed. In addition, by changing the size of the opening depending on the location, the size of the light emitting portion can be easily changed depending on the location. For example, in each of the three primary color pixels, the size of the light emitting unit can be changed according to the light emission efficiency of each color.

In one embodiment, the low refractive index body forming step includes a step of forming a low refractive index body so as to fill a gap between the light emitting portions,
An upper wiring step of forming a wiring for connecting the second conductivity type semiconductor on the upper surface of the low refractive index body;

  According to the above embodiment, the upper wiring process is facilitated since the low refractive index body is formed so as to fill the gap between the light emitting portions and the surface is made substantially flat, and then the upper wiring process is performed.

In one embodiment,
The light emitting portion is made of a crystalline inorganic semiconductor,
A lower wiring forming step of forming a lower wiring on the substrate;
The lower wiring step includes a step of patterning a crystalline conductor film on the substrate,
The light emitting part position defining step defines the position of the light emitting part with respect to the crystalline conductor film.

  According to the above embodiment, the step of forming the lower wiring also serves as the base formation for forming the light emitting portion made of the crystalline inorganic semiconductor portion. Accordingly, a light-emitting portion having good crystallinity can be formed by a simple process.

In one embodiment,
On the substrate, a semiconductor stacked film formed by stacking a first conductive type semiconductor film and a second conductive type semiconductor film in this order is formed, and then etching is performed. A light emitting portion forming etching step of forming a plurality of columnar light emitting portions having a second conductivity type semiconductor;
A low refractive index body having a refractive index lower than that of the first conductivity type semiconductor and lower than that of the second conductivity type semiconductor is brought into contact with the side wall portion of each light emitting portion. And a low-refractive-index body forming step arranged as described above.

  According to the present invention, the low refractive index body having a lower refractive index than the first semiconductor and the second semiconductor constituting the light emitting part is formed so as to be in contact with the side wall part of the light emitting part. When light is incident on the low refractive index body at an angle larger than the critical angle, the incident light is totally reflected at the interface between the light emitting section and the low refractive index body, and remains inside the light emitting section. Finally, the light is emitted from the upper part of the light emitting part. Therefore, light leakage from a certain pixel to an adjacent pixel is suppressed, and blurring of an image can be reduced. Furthermore, since the amount of light emission can be suppressed by the amount of light leakage, the power consumption of the self-luminous display can be suppressed.

  In addition, the light emitting unit etches the substrate on which the semiconductor laminated film in which the first conductive type semiconductor film and the second conductive type semiconductor film are laminated in this order is formed on the substrate. Since the portions are formed, it is not necessary to mount a plurality of light emitting portions on the substrate one by one, and the manufacturing process can be greatly simplified.

The mobile device of the present invention
The self-luminous display of the present invention is provided.

  ADVANTAGE OF THE INVENTION According to this invention, while being able to make the display of a mobile electronic device high definition, low power consumption can be implement | achieved.

  According to the self-luminous display of the present invention, more of the light emitted from the light emitting unit can be emitted in the normal direction of the substrate. Therefore, light leakage from a certain pixel to an adjacent pixel can be suppressed, image bleeding can be reduced, and the amount of light emission can be suppressed by the amount of light leakage, thereby reducing the power consumption of the self-luminous display. Can be suppressed.

It is a partial top view of the self-luminous display of a 1st embodiment of the present invention. It is AA arrow sectional drawing of FIG. It is a figure explaining an example of the procedure which can manufacture the self-light-emitting display of 1st Embodiment. It is a figure explaining an example of the procedure which can manufacture the self-light-emitting display of 1st Embodiment. It is a figure explaining an example of the procedure which can manufacture the self-light-emitting display of 1st Embodiment. It is a figure explaining an example of the procedure which can manufacture the self-light-emitting display of 1st Embodiment. It is a figure explaining an example of the procedure which can manufacture the self-light-emitting display of 1st Embodiment. It is a figure explaining an example of the procedure which can manufacture the self-light-emitting display of 1st Embodiment. It is a figure explaining an example of the procedure which can manufacture the self-light-emitting display of 1st Embodiment. It is a figure explaining the other procedure which manufactures the self-light-emitting display of 1st Embodiment. It is a figure explaining the other procedure which manufactures the self-light-emitting display of 1st Embodiment. It is a schematic sectional drawing of the self-light-emitting display of 2nd Embodiment of this invention. It is general | schematic sectional drawing of the self-light-emitting display of 3rd Embodiment of this invention. It is a schematic sectional drawing of the self-luminous display of 4th Embodiment of this invention. It is a schematic sectional drawing of the self-luminous display of 5th Embodiment of this invention. It is a partial top view of the self-luminous display of 6th Embodiment of this invention. It is BB sectional view taken on the line of FIG. It is a figure explaining an example of the procedure which manufactures the self-light-emitting display of 6th Embodiment. It is a figure explaining an example of the procedure which manufactures the self-light-emitting display of 6th Embodiment. It is a figure explaining an example of the procedure which manufactures the self-light-emitting display of 6th Embodiment. It is a figure explaining an example of the procedure which manufactures the self-light-emitting display of 6th Embodiment. It is a figure explaining an example of the procedure which manufactures the self-light-emitting display of 6th Embodiment. It is a figure explaining an example of the procedure which manufactures the self-light-emitting display of 6th Embodiment. It is a figure explaining an example of the procedure which manufactures the self-light-emitting display of 6th Embodiment. It is a partial top view of the self-luminous display of 7th Embodiment of this invention. It is CC sectional view taken on the line of FIG. It is a figure explaining an example of the formation method of the self-light-emitting display 700 of 7th Embodiment. It is a figure explaining an example of the formation method of the self-light-emitting display of 7th Embodiment. It is a figure explaining an example of the formation method of the self-light-emitting display of 7th Embodiment. It is a figure explaining an example of the formation method of the self-light-emitting display of 7th Embodiment. It is a figure explaining an example of the formation method of the self-light-emitting display of 7th Embodiment. It is a figure explaining an example of the formation method of the self-light-emitting display of 7th Embodiment. It is a figure explaining an example of the formation method of the self-light-emitting display of 7th Embodiment. It is a figure explaining an example of the formation method of the self-light-emitting display of 7th Embodiment. It is a circuit diagram of the pixel which comprises the self-light-emitting display of 8th Embodiment of this invention. It is a top view of a part of the self-luminous display of the eighth embodiment. It is DD sectional view taken on the line of FIG. FIG. 37 is a cross-sectional view taken along line EE in FIG. 36. It is a block diagram of the mobile electronic device of 9th Embodiment of this invention. It is a figure explaining the structure of the conventional LED display. It is a figure explaining the structure of the conventional LED display.

  Hereinafter, the present invention will be described in detail with reference to the drawings.

(First embodiment)
FIG. 1 is a plan view of a part of the self-luminous display according to the first embodiment, and FIG. 2 is a cross-sectional view taken along AA in FIG.

  As shown in FIGS. 1 and 2, in the self-luminous display 100 according to the present embodiment, the first wirings 102a, 102b, and 102c are arranged in one direction on the substrate 101 as a first direction on the substrate 101, respectively. It extends to. On the first wirings 102a, 102b, and 102c, columnar light emitting portions 104, each of which serves as a pixel and emits ultraviolet light, are formed at substantially equal intervals. Each columnar light-emitting portion 104 is formed by laminating a first conductivity type semiconductor 107, an active layer 109, and a second conductivity type semiconductor 108 from the side in contact with the first wiring 102a, 102b or 102c. A space between the plurality of columnar light emitting portions 104 discretely formed on the first wirings 102 a, 102 b, and 102 c is filled with a low refractive index body 106 having a lower refractive index than that of the semiconductor constituting the light emitting portion 104. .

  On the light emitting unit 104 and the low refractive index body 106, second wirings 103a, 103b, 103c made of transparent electrodes respectively extend in the other direction as the second direction intersecting with one direction on the substrate. Yes.

  The first conductive type semiconductor 107 of each light emitting portion 104 constituting each pixel is connected to one of the first wirings 102a, 102b, and 102c, and the second conductive type semiconductor 108 is connected to the second wiring 103a, 103b or 103c. By selecting the first wiring and the second wiring one by one, a specific pixel, that is, a specific light emitting unit 104 can be selected. On each light emitting unit 104, there is a red phosphor 110R that converts ultraviolet light into red light, a green phosphor 110G that converts ultraviolet light into green light, or a blue phosphor 110B that converts ultraviolet light into blue light. The arranged red phosphor 110R constitutes the red pixel 105R, the arranged green phosphor 110G constitutes the green pixel 105G, and the arranged blue phosphor 110B constitutes the blue pixel. 105B is configured.

  In FIG. 1, the red pixel 105R, the green pixel 105G, and the blue pixel 105B are each illustrated with three pixels, but a desired number of pixels can be provided. 1 and 2, one light emitting unit 104 constitutes one pixel, but a plurality of light emitting units 104 may constitute one pixel. In the case where a plurality of light emitting units 104 constitute one pixel, even if a certain light emitting unit 104 causes a lighting failure, it can be prevented that the pixel does not light at all. it can.

  As the substrate 101, an insulator substrate such as a sapphire substrate or a ceramic substrate, a silicon substrate having a silicon oxide film formed on the surface, or the like can be used. For the first wirings 102a, 102b, and 102c, for example, a silicon film or a stacked film in which n-type GaN is formed on the silicon film can be used. For the second wirings 103a, 103b, 103c, for example, transparent electrodes such as ITO (Indium Tin Oxide) and IZO (Indium Zinc Oxide) can be used.

  The first conductivity type semiconductor 107 constituting the light emitting unit 104 is n-type AlGaN or n-type GaN, the second conductivity type semiconductor 108 is p-type AlGaN or p-type GaN, and the active layer 109 is AlGaN or the like can be used for each. In addition, the cross section of the columnar light emitting unit 104 may be circular, or may be a polygon such as a triangle, a quadrangle, or a hexagon.

  As the low refractive index body 106, SOG (Spin on Glass) or transparent resin can be used. The low refractive index body 106 has a refractive index lower than that of the semiconductors (the first conductive type semiconductor 107 and the second conductive type semiconductor 108) constituting the light emitting unit 104. Therefore, when the light generated in the light emitting unit 104 enters the interface between the light emitting unit 104 and the low refractive index body 106 from the inside, if the incident angle is larger than the critical angle, the light is totally reflected and Will stay inside. Therefore, light leaking from the side wall of the light emitting unit 104 to the adjacent light emitting unit (pixel) can be reduced.

  A preferable example of the material constituting the light emitting portion 104 and the low refractive index body 106 is that the light emitting portion 104 is made of GaN (refractive index of about 2.4), and the low refractive index body 106 is a transparent resin such as an epoxy resin or a silicon resin. (Refractive index of about 1.5). The critical angle in this case is about 39 °. Further, as a more preferable example of the substance constituting the light emitting portion 104 and the low refractive index body 106, the light emitting portion 104 is made of GaN (refractive index about 2.4), and the low refractive index body 106 is porous SOG (refractive index). About 1.3). The critical angle in this case is about 33 °.

  Note that the low refractive index body 106 does not necessarily need to completely fill the space between the columnar light emitting portions 104 that are formed apart from each other, and may be in contact with at least the side wall of the columnar light emitting portion 104. For example, the low refractive index body 106 may be formed in a thin film shape on the side wall of the columnar light emitting unit 104, and a reflective film may be formed on the thin film low refractive index body 106. In this way, the laminated film of the low refractive index body 106 and the reflective film is formed on the side wall of the columnar light emitting unit, and the light generated by the columnar light emitting unit 104 enters the adjacent light emitting unit (pixel). Leakage can be almost completely prevented. In the case of such a configuration, it is preferable to further fill a gap left between the plurality of light emitting units 104 with a resin or the like.

  As the diameter of the columnar light emitting portion 104, a dimension between 10 nm and 1 mm can be adopted. Further, as the length of the columnar light emitting portion 104, a dimension between 100 nm and 1 mm can be adopted. Further, the diameter of the columnar light-emitting portion 104 can more preferably be a dimension between 100 nm and 10 μm, and the length of the columnar light-emitting portion 104 is more preferably 1 μm to 100 μm. Between dimensions can be employed.

  In the self-luminous display according to the present embodiment, as described below, the light-emitting portion 104 can be directly formed on the substrate 101 by a VLS (Vapor Liquid Solid) method or the like, and the columnar light-emitting portion is nanoscale. And can be miniaturized to microscale. For this reason, it is possible to make an extremely high-definition self-luminous display by miniaturizing pixels, which is suitable as a display for mobile use. On the other hand, when the columnar light emitting unit 104 is made relatively large, it is suitable as a large display or a high brightness display.

  Further, in the self-luminous display 100 of this embodiment, the low refractive index body 106 having a refractive index smaller than that of the semiconductor constituting the light emitting unit 104 is in contact with the side walls of the light emitting units discretely arranged on the substrate 101. Therefore, the light generated inside the light emitting part is totally reflected when incident at an angle larger than the critical angle, stays inside the light emitting part, and is finally emitted from the upper part of the light emitting part. Therefore, light leakage from a certain pixel to an adjacent pixel is suppressed, and blurring of an image can be reduced. Furthermore, since the amount of light emission can be suppressed by the amount of light leakage, the power consumption of the self-luminous display 100 can be suppressed.

  By the way, it is preferable that the upper surface of the columnar light emitting portion 104 is in contact with a high refractive index body in which the refractive index at the light emission wavelength of the light emitting portion 104 is larger than that of the low refractive index body 106. For example, as a preferable example, the columnar light emitting portion 104 is made of GaN (refractive index of about 2.4), and the low refractive index body 106 is made of transparent resin (refractive index of about 1.5) such as poxy resin or silicon resin. In some cases, the upper surface of the columnar light-emitting portion 104 is in contact with the second wirings 103a, 103b, and 103c made of ITO (refractive index of about 2.1).

  In this case, most of the light generated inside the light emitting unit 104 is totally reflected on the side wall of the light emitting unit 104, but is relatively difficult to be totally reflected on the upper surface of the light emitting unit 104. 104 is taken out above. Therefore, light leakage from a certain pixel to an adjacent pixel can be suppressed, blurring of an image can be reduced, the light emission efficiency of the pixel can be improved, and the power consumption of the self light emitting display can be suppressed.

  In the self-luminous display 100 according to the present embodiment, the columnar light emitting unit 104 includes a first conductive type semiconductor 107 and a second conductive type semiconductor 108 that are stacked in order from the substrate 101 side. Are formed with a plurality of first wirings 102 a, 102 b, 102 c extending in one direction as a first direction, and a plurality of second wirings 103 a, 103 b, extending in the other direction, are formed on the plurality of light emitting units 104. 103c is formed, and each of the first conductivity type semiconductors 107 of the plurality of light emitting units 104 is electrically connected to any one of the plurality of first wirings 102a, 102b, 102c, and the plurality of light emitting units 104 is formed. Each of the second conductivity type semiconductors 108 is electrically connected to any one of the plurality of second wirings 103a, 103b, 103c.

  Select one of the first wirings 102a, 102b, and 102c and one of the second wirings 103a, 103b, and 103c, flow a current to obtain a desired luminance, emit light, and so on. Similarly, the light emitting units 104 can be selected one after another to emit pulses. Alternatively, for example, one of the first wirings 102a, 102b, and 102c is selected, and a current for obtaining a desired luminance is supplied to each of the second wirings 103a, 103b, and 103c, so that each line is The light emitting unit 104 may emit pulses, and the self light emitting display 100 may be driven passively.

  Since the self-luminous display 100 described above has a simple structure, the number of manufacturing steps can be reduced. In addition, since the columnar light-emitting portion 104 is formed by sequentially laminating the first conductivity type semiconductor 107 and the second conductivity type semiconductor 108 from the substrate 101 side, the first wiring formed on the substrate 102a, 102b, and 102c are connected to the first conductive type semiconductor 107, and the second wirings 103a, 103b, and 103c formed on the light emitting portion are easily connected to the second semiconductor 108. Become.

  Note that the second wirings 103a, 103b, and 103c are preferably transparent electrodes. In this case, the wiring formed on the upper surface of the light emitting unit 104 transmits light from the light emitting unit without blocking, so that the luminous efficiency is improved. The power consumption of the self-luminous display can be suppressed.

  In the case where the self-luminous display 100 is passively driven, the semiconductor constituting the light emitting unit 104 is particularly preferably made of an inorganic semiconductor. Since the passive drive type self-luminous display has a larger screen and the number of pixels increases, the pulse emission time is shortened. This is because if the light emitting portion is made of an inorganic semiconductor, it is easy to increase the light emission intensity as compared with an organic semiconductor, so that it is possible to cope with an increase in screen size and an increase in pixels.

  Moreover, it is preferable that the light emitting part 104 is mainly composed of GaN. Since GaN has a high refractive index of about 2.4 and can increase the difference in refractive index with the low refractive index body 106 in contact with the side wall, it effectively suppresses light leakage from the side wall of the light emitting unit 104. This is because bleeding of the image can be reduced.

  Furthermore, the light emitting unit 104 mainly composed of GaN preferably includes an active layer 109 made of any one of InGaN, AlGaN, and AlInGaN. The active layer 109 is not limited to a single layer, and may have a multilayer structure. By sandwiching an active layer between n-type GaN and p-type GaN, luminous efficiency can be significantly improved.

  By the way, a crystalline conductive film pattern is formed on the substrate 101, and a light emitting portion 104 is formed on the conductive film pattern, and the light emitting portion 104 is made of a crystalline inorganic semiconductor. Is preferred. In this embodiment mode, the crystalline conductive film pattern is, for example, a silicon film or a stacked film in which n-type GaN is formed over the silicon film, and is also used as the first wirings 102a, 102b, and 102c.

  Since a crystalline conductive film is formed on the substrate 101 and a light emitting portion 104 made of a crystalline inorganic semiconductor is formed thereon, the light emitting portion 104 is collectively formed on the substrate by epitaxial growth. Is possible. Therefore, the process of mounting the plurality of light emitting units 104 on the substrate one by one is not necessary.

  Regarding the shape of the columnar light-emitting portion 104, the height (indicated by H in FIG. 2) of the columnar light-emitting portion 104 is preferably larger than the width (indicated by W in FIG. 2). In such a shape, the contact area between the light emitting portion 104 and the crystalline conductive film (first wirings 102a, 102b, 102c) formed on the substrate 101 is reduced, and the light emitting layer (active layer 109) is formed. And the crystalline conductive film formed over the substrate 101 can be increased, so that light emission is caused by a mismatch in lattice constant between the crystalline conductive film formed over the substrate 101 and the light-emitting portion 104. The crystal defect density in the vicinity of the layer can be reduced, the light emission efficiency of the light emitting portion 104 can be increased, and the power consumption of the self light emitting display can be suppressed.

  The crystalline conductive film (first wirings 102a, 102b, and 102c) formed over the substrate 101 is formed of silicon or a stacked film in which silicon and GaN are stacked from the substrate side. It is preferably made of GaN. Silicon crystalline films can be easily formed on many substrates, and GaN crystals can be grown on silicon crystalline films. Further, if a GaN crystalline film is formed on the silicon crystalline film, the crystallinity of GaN constituting the light emitting portion 104 can be improved, and the light emission efficiency of the light emitting portion 104 can be improved. In such a configuration, it is possible to reduce the power consumption of the self-luminous display by forming the light-emitting portion 104 with high efficiency at low cost.

  Further, when the size of the light emitting unit 104 is small, specifically, when the diameter of the light emitting unit 104 is 30 μm or less, a normal phosphor (particle size is 10 to 20 μm) is used for each pixel. It becomes difficult to apply the phosphor. Furthermore, since the number of phosphor particles for each pixel varies, it is difficult to keep the color of the pixel constant. Therefore, as the red phosphor 110R, the green phosphor 110G, and the blue phosphor 110B, it is preferable to apply a nanoparticle phosphor having a phosphor particle diameter of 1 μm or less, more preferably about 10 nm to 100 nm. As a result, the phosphor can be easily applied, and the color development of the pixel can be made constant even when the pixel has a high definition.

  In the self-luminous display 100 of the present embodiment, one of the blue pixel 105B, the green pixel 105G, and the red pixel 105R is formed for each of the plurality of light emitting units 104, and each light emitting unit 104 emits ultraviolet light when energized. It is like that. The blue pixel 105B is provided with a blue phosphor 110B that converts the ultraviolet light generated in the light emitting unit 104 into blue light, and the green pixel 105G is a green fluorescent that converts the ultraviolet light generated in the light emitting unit 104 into green light. 110G is provided, and the red pixel 105R is provided with a red phosphor 110R that converts ultraviolet light generated in the light emitting unit 104 into red light.

  In this manner, by providing the blue pixel 105B, the green pixel 105G, and the red pixel 105R, colorization is possible. In addition, the light emitting unit 104 emits ultraviolet light, the blue pixel 105B is provided with a blue phosphor 110B that converts ultraviolet light into blue light and converted into blue light, and the green pixel 105G converts ultraviolet light into green light. A green phosphor 110G for conversion is provided for conversion to green light. In the red pixel 105R, three types of light emitting units are provided by providing a red phosphor 110R for converting ultraviolet light to red light for conversion to red light. There is no need and one type is enough. Further, since each pixel converts the wavelength of ultraviolet light that cannot be seen by the eyes, it is easy to obtain monochromatic light and color reproducibility can be improved.

  3-9 is a figure explaining an example of the procedure which can manufacture the self-light-emitting display 100 of 1st Embodiment.

  First, as shown in FIG. 3, at least a substrate 101 having an insulating surface, for example, an insulator substrate such as a sapphire substrate or a ceramic substrate, and a silicon substrate on which a silicon oxide film is formed are prepared.

  Next, as shown in FIG. 4, a silicon thin film having a thickness of 50 nm is deposited on the substrate 101 by the CVD method, and then annealed at 900 ° C. for crystallization. Subsequently, n-type GaN having a thickness of 100 nm is deposited on the silicon thin film by MOCVD. The n-type GaN / silicon stacked film thus formed on the substrate 101 is patterned by a photolithography process to form the first wiring 102b. This process constitutes a lower wiring process.

  Next, as shown in FIG. 5, a catalyst metal such as Ni or Au is deposited on the entire surface of the substrate by sputtering, and dot-shaped metal catalyst particles 121 are formed on the first wiring 102b by a photolithography process. . Thereafter, the dot-shaped metal catalyst particles 121 can be further aggregated by annealing. The particle diameter of the metal catalyst particles may be determined according to the thickness of the columnar light emitting portion 104 to be formed later. The thickness of the columnar light emitting unit 104 can be set to, for example, 100 nm to 10 μm. This step defines the positions where the plurality of light emitting units 104 are formed at predetermined positions on the substrate 101, and constitutes a light emitting unit position defining step.

  Next, a light emitting part formation epitaxial process is performed. Specifically, as shown in FIG. 6, at a growth temperature of 800 ° C., the first conductivity type semiconductor 107 (for example, AlGaN), the active layer 109 (for example, GaN), the second conductivity type, by a VLS (Vapor Liquid Solid) method. A semiconductor 108 (for example, AlGaN) is epitaxially grown in this order.

Gases used, when growing the AlGaN is TMG (trimethyl gallium), TMA (trimethyl aluminum), can be used _{H 2} (hydrogen) as NH ₃ (ammonia) and carrier gas. Further, when growing GaN, TMG, NH ₃ and H ₂ may be used. Further, as an impurity imparting conductivity to the semiconductor, SiH ₄ (silane) is added when the n-type conductivity is used, and Cp ₂ Mg (biscyclopentadiethylmagnesium) is added when the p-type conductivity is used. That's fine. The first conductivity type semiconductor 107, the active layer 109, and the second conductivity type semiconductor 108 constitute the light emitting unit 104. The length of the light emitting unit 104 can be set to 1 μm to 50 μm, for example. Subsequently, the metal catalyst particles 121 are removed by etching.

  Next, a low refractive index body forming step is performed. Specifically, as shown in FIG. 7, the side walls of a plurality of light emitting units 104 discretely formed on a substrate 101 with a low refractive index body 106 having a refractive index smaller than that of a semiconductor constituting the light emitting unit. Place it so that it touches. Specifically, gaps between the plurality of light emitting units 104 can be filled with resin or SOG. At this time, when the upper surface of the light emitting unit 104 is filled with the low refractive index body 106, etching is appropriately performed until the upper surface of the light emitting unit 104 is exposed.

  Next, an upper wiring process is performed. Specifically, as shown in FIG. 8, after ITO or IZO is uniformly deposited on the upper surfaces of the low-refractive-index body 106 and the light-emitting portion 104, a photolithography process is performed on the upper surface of the low-refractive-index body 106. Second wirings 103a, 103b, and 103c that connect the plurality of light emitting units are formed.

  Next, as illustrated in FIG. 9, any one of the red phosphor 110 </ b> R, the green phosphor 110 </ b> G, and the blue phosphor 110 </ b> B is applied on each light emitting unit 104 (each pixel) by inkjet. When the size of the light emitting unit 104 is small, specifically, when the diameter of the light emitting unit 104 is 30 μm or less, a normal phosphor (particle size is 10 to 20 μm) is used for each pixel. It becomes difficult to apply the phosphor. In this case, it is preferable to apply a nanoparticle phosphor having a diameter of phosphor particles of 1 μm or less, more preferably about 10 nm to 100 nm. Thereby, the red pixel 105R, the green pixel 105G, and the blue pixel 105B are defined, and the self-luminous display 100 is completed.

  According to the above procedure, the low refractive index body 106 having a lower refractive index than the first semiconductor 107 and the second semiconductor 108 constituting the light emitting unit 104 is formed so as to be in contact with at least the side wall of the light emitting unit 104. When the light generated inside the light emitting unit 104 is incident on the low refractive index body 106 at an angle larger than the critical angle, it stays inside the light emitting unit 104 by performing total reflection, and finally from the upper part of the light emitting unit 104. Radiated.

  Therefore, light leakage from a certain pixel to an adjacent pixel is suppressed, and blurring of an image can be reduced. Furthermore, since the amount of light emission can be suppressed by the amount of light leakage, the power consumption of the self-luminous display 100 can be suppressed. Further, since the light emitting portions 104 are collectively formed at a predetermined position on the substrate 101 by epitaxial growth, it is not necessary to mount the plurality of light emitting portions 104 on the substrate one by one. Therefore, the manufacturing process can be greatly simplified.

  Further, in the above procedure, in the light emitting portion position defining step for defining the positions where the plurality of light emitting portions 104 are formed at predetermined positions on the substrate 101, the step of arranging the metal catalyst particles 121 at predetermined positions on the substrate 101 is performed. In addition, the light emitting portion forming epitaxial step includes a step of epitaxially growing the first conductive type semiconductor 107 and the second conductive type semiconductor 108 by the VLS method using the metal catalyst particles 121 as a catalyst. It is suitable as a combination of a position defining process and a light emitting part formation epitaxial process, and by adopting a combination of these processes, a light emitting part with good crystallinity can be easily formed. Further, since the VLS method using a catalyst is used for epitaxial growth, there is an advantage that the process can be performed at a low temperature.

  Further, the low refractive index body forming step includes a step of forming the low refractive index body 106 so as to fill the gaps between the light emitting portions 104 that are discretely formed on the substrate 101. It is preferable to further include an upper wiring process for forming second wirings 103a, 103b, and 103c for connecting the second conductivity type semiconductors of the plurality of light emitting units 104 along the upper surface. In this case, since the low refractive index body 106 is formed so as to fill the gaps between the light emitting portions 104 and the surface is made substantially flat and then the upper wiring process is performed, the upper wiring process is facilitated.

  The lower wiring step includes a step of patterning a crystalline conductor film on the substrate 101. In the light emitting portion position defining step, a position where the light emitting portion 104 is formed on the patterned conductor film is defined. Furthermore, it is preferable that the light emitting portion 104 is made of an inorganic semiconductor. In this case, the step of forming the lower wiring can also serve as the base formation for forming the light emitting portion made of the crystalline inorganic semiconductor portion, and a favorable crystalline light emitting portion can be formed by a simple process. Because.

  10 and 11 are diagrams for explaining another procedure for manufacturing the self-luminous display 100 according to the first embodiment.

  In this modification, first, the same process as that described with reference to FIGS. 3 and 4 is performed.

  Next, as shown in FIG. 10, a silicon nitride film 122 is deposited on the entire surface of the substrate, and an opening is provided in the silicon nitride film 122 by photolithography. The size of the opening defines the thickness of the columnar light-emitting portion 104 that is epitaxially grown in the next light-emitting portion forming step. The thickness of the columnar light emitting unit 104 can be set to, for example, 100 nm to 10 μm. This step defines the positions where the plurality of light emitting units 104 are formed at predetermined positions on the substrate 101, and constitutes a light emitting unit position defining step.

  Next, a light emitting part formation epitaxial process is performed. Specifically, as shown in FIG. 11, the first conductivity type semiconductor 107 (for example, AlGaN), the active layer 109 (for example, GaN), the second conductivity is formed at a growth temperature of 950 ° C. by MOCVD (Metal Organic Chemical Vapor Deposition) method. A type semiconductor 108 (for example, AlGaN) is epitaxially grown in this order. Although the silicon nitride film 122 may be removed after the light emitting portion formation epitaxial step, it is not always necessary to remove it. Next, the self-luminous display 100 is completed by performing the same steps as those described with reference to FIGS.

  According to the procedure of the modified example, in the light emitting unit position defining step of defining the positions where the plurality of light emitting units 104 are formed at predetermined positions on the substrate 101, the predetermined positions on the substrate 101 are opened on the substrate 101. Thus, the step of forming a mask provided with openings is included, and the light emitting portion formation epitaxial step includes a step of selectively epitaxially growing a semiconductor in the openings.

  This is suitable as a combination of the light emitting portion position defining step and the light emitting portion formation epitaxial step, and it becomes possible to easily form a light emitting portion with good crystallinity. In addition, by changing the size of the opening depending on the location, the size of the light emitting portion can be easily changed depending on the location. For example, in each of the three primary color pixels, the size of the light emitting unit can be changed according to the light emission efficiency of each color.

(Second Embodiment)
FIG. 12 is a schematic cross-sectional view of the self-luminous display according to the second embodiment of the present invention.

  In the self-luminous display of the second embodiment, the plurality of light emitting units emit blue light when energized, and the green pixel is provided with a phosphor that converts blue light generated by the light emitting unit into green light. The red pixel is different from the self-luminous display of the first embodiment in that a phosphor that converts blue light generated in the light emitting unit into red light is provided. That is, the second embodiment is the same as the first embodiment in that each of the plurality of light emitting units formed on the substrate corresponds to any of a blue pixel, a green pixel, and a red pixel. The first embodiment is different from the first embodiment in that the portion emits blue light and the phosphors are two types of red phosphor and blue phosphor.

  As shown in FIG. 12, in the self-luminous display 200 of the present embodiment, a plurality of first wirings (only the first wiring 202b is shown in FIG. 12) are provided on the substrate 201 in the first direction. It extends in one direction on the substrate 201. On the first wiring 202b, columnar light emitting portions 204, each of which serves as a pixel and emits blue light, are formed at substantially equal intervals. The columnar light-emitting portion 204 is formed by sequentially laminating a first conductivity type semiconductor 207, an active layer 209, and a second conductivity type semiconductor 208 from the side in contact with the first wiring 202b.

  A space between the plurality of columnar light emitting portions 204 discretely formed on the first wiring 202 b is filled with a low refractive index body 206 having a lower refractive index than that of the semiconductor constituting the light emitting portion 204. On the light emitting unit 204 and the low refractive index body 206, second wirings 203a, 203b, 203c made of transparent electrodes respectively extend in the other direction as the second direction intersecting the one direction on the substrate. ing.

  Then, the first conductive type semiconductor 207 of each light emitting unit 204 that is a pixel is connected to one of the plurality of first wirings, and the second conductive type semiconductor 208 is connected to the second wirings 203a, 203b, 203c is connected. By selecting the first wiring and the second wiring one by one, a specific pixel, that is, a specific light emitting unit 204 can be selected. On each light emitting unit 204, a red phosphor 211R that converts blue light into red light, a green phosphor 211G that converts blue light into green light, or a phosphor Is not arranged, the pixel in which the red phosphor 211R is arranged is a red pixel 205R, the pixel in which the green phosphor 211G is arranged is a green pixel 205G, and the pixel in which no phosphor is arranged is a blue pixel 205B. .

  The self-luminous display 200 according to the present embodiment can be formed in substantially the same procedure as the self-luminous display 100 according to the first embodiment. The points to be changed are (i) the light emitting unit 204 is designed so that the light emitting unit 204 emits blue light (for example, the band gap is adjusted by using the light emitting layer 209 as InGaN), and (ii) the blue pixel 205B The top is that no phosphor is applied. Here, the above (i) can be easily realized by appropriately adjusting the band gap of the active layer 209.

  Since the self-luminous display 200 of the present embodiment includes the blue pixel 205B, the green pixel 205G, and the red pixel 205R, colorization is possible. The light emitting unit 204 emits blue light, the green pixel 205G is provided with a green phosphor 211G that converts blue light into green light, and is converted into green light, and the red pixel 205R is red that converts blue light into red light. By providing the phosphor 211R and converting it into red light, it is not necessary to provide three types of light emitting units, and only one type is sufficient. In addition, since the blue pixel uses the blue color generated in the light emitting portion as it is, two types of phosphors are sufficient.

(Third embodiment)
FIG. 13 is a schematic cross-sectional view of the self-luminous display 300 according to the third embodiment of the present invention.

  In the self-luminous display 300 of the third embodiment, the plurality of light emitting units formed on the substrate correspond to any one of blue pixels, green pixels, yellow pixels, and red pixels, and the plurality of light emitting units are energized. The blue pixel is provided with a phosphor that converts the ultraviolet light generated in the light emitting unit into green light, and the green pixel converts the ultraviolet light generated in the light emitting unit into green light. A phosphor is provided, and the yellow pixel is provided with a phosphor that converts the ultraviolet light generated in the light emitting unit into yellow light, and the red pixel converts the ultraviolet light generated in the light emitting unit into red light. The point where the phosphor is provided is different from the self-luminous display of the first embodiment. That is, the self-luminous display 300 according to the third embodiment is different from the self-luminous display according to the first embodiment in that the pixel includes four types of blue pixels, green pixels, yellow pixels, and red pixels.

  As shown in FIG. 13, in the self-luminous display 300 of the third embodiment, a plurality of first wirings (only the first wiring 302b is shown in FIG. 13) are formed on a substrate 301, and the plurality of first wirings are displayed. The first wirings are spaced apart from each other, and each first wiring extends in one direction on the substrate as the first direction.

  On the first wiring 302b, columnar light emitting portions 304 that emit ultraviolet light are formed at substantially equal intervals, and a pixel is configured for each light emitting portion 304. The columnar light-emitting portion 304 is formed by sequentially stacking a first conductivity type semiconductor 307, an active layer 309, and a second conductivity type semiconductor 308 from the side in contact with the first wiring 302b. A space between the plurality of columnar light emitting portions 304 discretely formed on the first wiring 302 b is filled with a low refractive index body 306 having a refractive index lower than that of the semiconductor constituting the light emitting portion 304.

  On the light emitting unit 304 and the low refractive index body 306, there are a plurality of second wirings 303a, 303b, 303c, and 303d made of transparent electrodes. Each of the plurality of second wirings 303a, 303b, 303c, and 303d extends in the other direction as a second direction that intersects with one direction on the substrate. The first conductivity type semiconductor 307 of each light emitting unit 304 included in each pixel is connected to one of a plurality of first wirings, and the second conductivity type semiconductor 308 includes second wirings 303a, 303b, and 303c. , 303d. By selecting the first wiring and the second wiring one by one, a specific pixel, that is, a specific light emitting unit 304 can be selected.

  On each light emitting unit 304, a red phosphor 310R that converts ultraviolet light into red light, a yellow phosphor 310Y that converts ultraviolet light into yellow light, a green phosphor 310G that converts ultraviolet light into green light, or an ultraviolet light One of the blue phosphors 310B that converts light into blue light is disposed. The pixel in which the red phosphor 310R is arranged constitutes a red pixel 305R, the pixel in which the yellow phosphor 310Y is arranged constitutes a yellow pixel 305Y, and the pixel in which the green phosphor 310G is arranged is a green pixel 305G. And the pixel on which the blue phosphor 310B is disposed constitutes a blue pixel 305B.

  The self-luminous display 300 according to the third embodiment can be formed by substantially the same procedure as the self-luminous display 100 according to the first embodiment. The only change is to add a step of applying a yellow phosphor 310Y for newly providing a yellow pixel 305Y.

  Since the self-luminous display 300 of the third embodiment includes a blue pixel, a green pixel, a yellow pixel, and a red pixel, colorization is possible. Moreover, since so-called four primary colors are used, the range of colors that can be expressed can be widened. In addition, the light emitting unit emits ultraviolet light, a blue pixel is provided with a phosphor that converts ultraviolet light into blue light, and is converted into blue light, and a green pixel is provided with a phosphor that converts ultraviolet light into green light. By converting to light, a phosphor that converts ultraviolet light to yellow light at the yellow pixel is converted to yellow light, and a phosphor that converts ultraviolet light to red light is provided at the red pixel to convert it to red light There is no need to provide four types of light emitting units, and the self light emitting display 300 can be configured with only one type of light emitting unit. Further, since each pixel converts the wavelength of ultraviolet light that cannot be seen by the eyes, it is easy to obtain monochromatic light and color reproducibility can be improved.

(Fourth embodiment)
FIG. 14 is a schematic cross-sectional view of the self-luminous display 400 according to the fourth embodiment of the present invention.

  In the self-luminous display 400 of the fourth embodiment, the plurality of light emitting units formed on the substrate correspond to any of blue pixels, green pixels, yellow pixels, and red pixels, respectively, and the plurality of light emitting units are energized. The green pixel emits blue light, and the green pixel is provided with a phosphor that converts the blue light generated in the light emitting unit into green light. The yellow pixel converts the blue light generated in the light emitting unit into yellow light. A phosphor is provided, and the red pixel is provided with a phosphor that converts blue light generated in the light emitting portion into red light. That is, in the comparison with the second embodiment, the point that the light emitting unit emits blue light is the same, but the number of pixels is not three, but four of blue pixels, green pixels, yellow pixels, and red pixels. It is different in type.

  As shown in FIG. 14, the self-luminous display 400 of the fourth embodiment has a plurality of first wirings (only the first wirings 402 b are shown in FIG. 14) arranged on a substrate 401. The wiring extends on the substrate 401 in one direction, which is the first direction. On the first wiring 402 b, a plurality of columnar light emitting portions 404 that emit blue light are formed at substantially equal intervals, and a pixel is configured for each light emitting portion 404.

  Each columnar light-emitting portion 404 is formed by sequentially stacking a first conductivity type semiconductor 407, an active layer 409, and a second conductivity type semiconductor 408 from the side in contact with the first wiring 402b. A space between the plurality of columnar light emitting portions 404 discretely formed on the first wiring 402 b is filled with a low refractive index body 406 having a refractive index lower than that of the semiconductor constituting the light emitting portion 404.

  A plurality of second wirings 403a, 403b, 403c, and 403d made of a transparent electrode exist on the light emitting unit 404 and the low refractive index body 406, and the plurality of second wirings 403a, 403b, 403c, and 403d are The second wirings 403 a, 403 b, 403 c, and 403 d are spaced apart from each other and extend in the other direction as the second direction that intersects the one direction on the substrate 401.

  The first conductivity type semiconductor 407 of each light emitting unit 404 constituting each pixel is connected to one of the plurality of first wirings, and the second conductivity type semiconductor 408 is connected to the second wirings 403a, 403b, and 403c. , 403d. By selecting the first wiring and the second wiring one by one, a specific pixel, that is, a specific light emitting unit 404 can be selected.

  On each light emitting part 404, a red phosphor 411 that converts blue light into red light is disposed, or a yellow phosphor 411Y that converts blue light into yellow light is disposed, or blue light The green phosphor 411G for converting the light into green light is disposed, or the phosphor is not disposed. The pixel in which the red phosphor 411 is arranged constitutes a red pixel 505R, the pixel in which the yellow phosphor 411Y is arranged constitutes a yellow pixel 405Y, and the pixel in which the green phosphor 411G is arranged is a green pixel. A pixel that constitutes 405G and is not provided with a phosphor constitutes a blue pixel 405B.

  The self-luminous display 400 according to the fourth embodiment can be formed in substantially the same procedure as the self-luminous display 200 according to the second embodiment. The only change is to add a step of applying a yellow phosphor 510Y for newly providing a yellow pixel 405Y.

  The self-luminous display 400 of the fourth embodiment can be colored by providing blue pixels, green pixels, yellow pixels, and red pixels. Further, since the so-called four primary colors are used for color reproduction, the range of colors that can be expressed can be widened. The light emitting unit emits blue light, the green pixel is provided with a phosphor that converts blue light into green light and converted into green light, and the yellow pixel is provided with a phosphor that converts blue light into yellow light and yellow. By converting the light into red light and converting the blue light into red light in the red pixel and converting it into red light, there is no need to provide four types of light emitting units, and only one type of light emitting unit emits light. The display 400 can be configured. Further, since the blue pixel uses the blue color generated in the light emitting portion as it is, the self-luminous display 400 can be configured with only three types of phosphors.

(Fifth embodiment)
FIG. 15 is a schematic cross-sectional view of a self-luminous display 500 according to a fifth embodiment of the present invention.

  In the self-luminous display 500 of the fifth embodiment, the plurality of light emitting units formed on the substrate 501 correspond to any of a plurality of types of pixels (red pixel, yellow pixel, green pixel, and blue pixel), and each light emission. The unit emits light with a predetermined spectral distribution (red, yellow, green, and blue) according to the corresponding type of pixel. That is, the light emitting units belonging to the red pixel, the yellow pixel, the green pixel, and the blue pixel emit light in red, yellow, green, and blue, respectively.

  As shown in FIG. 15, in the self-luminous display 500 of the fifth embodiment, a plurality of first wirings (only the first wiring 502 b is shown in FIG. 15) is positioned on the substrate 501. The wirings are spaced apart from each other, and each first wiring extends in one direction on the substrate 501 as the first direction.

  Columnar light emitting portions 504R, 504Y, 504G, and 504B that emit red, yellow, green, and blue light are formed on the first wiring 502b at substantially equal intervals, and the light emitting portions 504R, 504Y, 504G, and A pixel is configured for each 504B.

  Each columnar light emitting portion 504R (504Y, 504G, 504B) includes a first conductivity type semiconductor 507R (507Y, 507G, 507B) and an active layer 509R (509Y, 509G, 509B) from the side in contact with the first wiring 502b. The second conductive type semiconductors 508R (508Y, 508G, 508B) are sequentially stacked. In addition, a plurality of columnar light emitting units 504R, 504Y in which low refractive index bodies 506 having a refractive index lower than that of the semiconductor constituting the light emitting units 504R, 504Y, 504G, and 504B are discretely formed on the first wiring 502b. , 504G and 504B.

  On the light emitting portions 504R, 504Y, 504G, and 504B and the low refractive index body 506, second wirings 503a, 503b, 503c, and 503d made of transparent electrodes are formed, and the second wirings 503a, 503b, 503c, and 503d are formed. Extends in the other direction as a second direction intersecting with one direction on the substrate 501.

  A first conductivity type semiconductor 507R (507Y, 507G, 507B) of each light emitting portion 504R (504Y, 504G, 504B) constituting each pixel is connected to one of a plurality of first wirings, and the second conductivity type. The semiconductor 508R (508Y, 508G, 508B) is connected to the second wiring 503a (503b, 503c, 503d). By selecting the first wiring and the second wiring one by one, specific pixels, that is, specific light emitting units 504R, 504Y, 504G, and 504B can be selected.

  In the fifth embodiment, the light emitting unit 504R emits red light, the light emitting unit 504Y emits yellow light, the light emitting unit 504G emits green light, and the light emitting unit 504B emits blue light. . The reason for emitting light with a different wavelength or spectral distribution for each light emitting part is that the thicknesses of the active layers 509R, 509Y, 509G, and 509B are so thin that the quantum effect is exerted, and the thicknesses thereof are different. This is because when the active layers 509R, 509Y, 509G, and 509B are sufficiently thin, subbands are formed in the quantum well and an effective band gap is widened.

  Specifically, when the active layers 509R, 509Y, 509G, and 509B are InN, when the thickness of the active layer 509R is 2.5 nm, 630 nm (red) is emitted, and the thickness of the active layer 509Y is 2.35 nm. Then, 580 nm (yellow) is emitted, 520 nm (green) is emitted when the thickness of the active layer 509G is 2.2 nm, and 460 nm (blue) is emitted when the thickness of the active layer 509B is 2.0 nm. it can.

When the active layers 509R, 509Y, 509G, and 509B are In _0.6 Ga _0.4 N, the active layer 509R emits light of 630 nm (red) when the thickness of the active layer 509R is 4.8 nm, and the thickness of the active layer 509Y When 3.9 nm is set to 3.9 nm, 580 nm (yellow) is emitted. When the thickness of the active layer 509 G is 3.25 nm, 520 nm (green) is emitted. When the thickness of the active layer 509 B is 2.75 nm, 460 nm (blue). Can emit light.

  The thicknesses of the light emitting units 504R, 504Y, 504G, and 504B are different from each other, but as described later, the thicknesses of the active layers 509R, 509Y, 509G, and 509B of the light emitting units 504R, 504Y, 504G, and 504B are simplified. To change. The active layer may be composed of a single layer or a multilayer.

  The self-luminous display 500 according to the fifth embodiment can be formed in substantially the same procedure as the self-luminous display 100 according to the first embodiment. What is changed is that the light emitting portions 504R, 504Y, 504G, and 504B are formed to have different thicknesses. In order to change the thickness of the light emitting portions 504R, 504Y, 504G, and 504B, for example, the size of the opening provided in the silicon nitride film 122 in FIG. 10 may be changed.

  The thicker the light emitting portion, the faster the growth rate of the active layer. Therefore, the active layer becomes thicker and the emission wavelength can be increased. Further, if the thickness of the light emitting part is changed as appropriate, a plurality of types of light emitting parts that emit light with different spectral distributions (wavelengths) can be formed at a time, so that the manufacturing process can be simplified.

  Note that when the thickness of the light emitting portion is changed, the growth rates of the first conductive type semiconductor and the second conductive type semiconductor also change, and the length of the light emitting portion may change depending on the pixel. In such a case, the thickness of the low refractive index body 506 may be formed in accordance with the shortest light emitting portion, and the light emitting portion protruding from the low refractive index body 506 may be polished. By doing so, the surface composed of the low refractive index body 506 and the light emitting portions 504R, 504Y, 504G, and 504B can be smoothed.

  Since the self-luminous display 500 of the fifth embodiment includes a plurality of types of pixels, colorization is possible. In addition, the plurality of light emitting units formed on the substrate 501 correspond to any of a plurality of types of pixels, and emit light with a predetermined spectral distribution (wavelength) according to the corresponding types of pixels, so that the wavelength is converted. There is no need to provide a phosphor for the purpose.

(Sixth embodiment)
16 is a plan view of a part of the self-luminous display 600 according to the sixth embodiment of the present invention, and FIG. 17 is a cross-sectional view taken along the line BB in FIG.

  In the self-luminous display 600 according to the sixth embodiment, lower wirings (first wirings) 661a, 661b, and 661c are not disposed between the substrate 601 and the light emitting unit, but are disposed on the back surface of the substrate 601 and are disposed on the substrate. The self-luminous display of the first embodiment is different in that it is electrically connected to the light emitting part through the perforated contact hole.

  As shown in FIGS. 16 and 17, in the self-luminous display 600 of the sixth embodiment, a plurality of first wirings 661a, 661b, 661c are arranged on the back surface of the substrate 601, and the plurality of first wirings 661a, 661b are arranged. , 661c are spaced apart from each other, and each of the first wirings 661a, 661b, 661c extends in one direction on the substrate 601 as the first direction.

  Columnar light emitting portions 604 that emit ultraviolet light are formed on the substrate 601 at substantially equal intervals, and a pixel is configured for each light emitting portion 604. The columnar light-emitting portion 604 is electrically connected to any one of the first wirings 661 a, 661 b, and 661 c through a contact hole 662 that penetrates the substrate 601. The columnar light-emitting portion 604 is formed by sequentially stacking a first conductivity type semiconductor 607, an active layer 609, and a second conductivity type semiconductor 608 from the side close to the first wirings 661a, 661b, and 661c. A space between the plurality of columnar light emitting portions 604 discretely formed on the substrate 601 is filled with a low refractive index body 606 having a refractive index lower than that of the semiconductor constituting the light emitting portion 604.

  A plurality of second wirings 603a, 603b, and 603c made of a transparent electrode are present on the light emitting unit 604 and the low refractive index body 606, and the plurality of second wirings 603a, 603b, and 603c are spaced from each other. Each of the second wirings 603a, 603b, and 603c is located in the other direction as a second direction that intersects with one direction on the substrate 601.

  The first conductive type semiconductor 607 of each light emitting portion 604 constituting each pixel is connected to one of the first wirings 661a, 661b, and 661c, and the second conductive type semiconductor 608 is connected to the second wiring 603a, It is connected to either 603b or 603c. By selecting the first wiring and the second wiring one by one, a specific pixel, that is, a specific light emitting unit 604 can be selected.

  On each light emitting unit 604, a red phosphor 610R that converts ultraviolet light into red light, a green phosphor 610G that converts ultraviolet light into green light, or an ultraviolet light is arranged. A blue phosphor 610B for converting the light into blue light is disposed. A pixel in which the red phosphor 610R is arranged constitutes a red pixel 605R, a pixel in which the green phosphor 610G is arranged constitutes a green pixel 605G, and a pixel in which the blue phosphor 610B is arranged is a blue pixel 605B. Is configured.

  In FIG. 16, the red pixel 605R, the green pixel 605G, and the blue pixel 605B are drawn three by three, but the number of pixels is not limited to three, and a desired number of pixels can be adopted. In FIG. 16 and FIG. 17, one light emitting unit 604 forms one pixel, but a plurality of light emitting units 604 may form one pixel. When a plurality of light emitting units 604 form one pixel, even if a certain light emitting unit 604 causes a lighting failure, it can be prevented that the pixel does not light up at all, so that the pixel failure is made inconspicuous. it can.

  As the substrate 601, a sapphire substrate, undoped GaN, or the like can be used. Since the contact hole penetrates the substrate 601 and the first wiring is formed on the back surface thereof, the substrate 601 needs to have insulating properties. In addition, since the light emitting portion 604 is epitaxially grown on the substrate 601, it is preferable that the substrate 601 has good crystallinity and has a lattice constant close to that of the semiconductor constituting the light emitting portion 604.

  For the first wirings 661a, 661b, and 661c, for example, a metal such as copper, gold, or tungsten can be used. The contact hole 662 can be filled with the same metal. For the second wirings 603a, 603b, and 603c, for example, transparent electrodes such as ITO and IZO can be used.

  N-type AlGaN or n-type GaN can be used for the first conductivity type semiconductor 607 constituting the light emitting unit 604, and p-type AlGaN or p-type GaN can be used for the second conductivity type semiconductor 608. In addition, AlGaN or the like can be used for the active layer 609. Note that the cross section of the columnar light emitting portion 604 may be a circle, or a polygon such as a triangle, a quadrangle, or a hexagon.

  As the low refractive index body 606, SOG or transparent resin can be used. The low refractive index body 606 has a refractive index smaller than that of the semiconductors (the first conductivity type semiconductor 607 and the second conductivity type semiconductor 608) constituting the light emitting unit 604. Therefore, when the light generated in the light emitting unit 604 is incident on the interface between the light emitting unit 604 and the low refractive index body 606 from the inside, the light incident on the low refractive index body 606 is larger than the critical angle. Is totally reflected and stays inside the light emitting portion 604. Therefore, light leaking from the side wall of the light emitting unit 604 to the adjacent light emitting unit (pixel) can be reduced.

  The substance constituting the light emitting portion 604 and the low refractive index body 606 is preferably such that the light emitting portion 604 is made of GaN (refractive index of about 2.4), and the low refractive index body 606 is a transparent resin such as epoxy resin or silicon resin ( Refractive index about 1.5). The critical angle in this case is about 39 °. In addition, the substance constituting the light emitting portion 604 and the low refractive index body 606 is more preferably made of the light emitting portion 604 made of GaN (refractive index of about 2.4), and the low refractive index body 606 of porous SOG (with a refractive index of about 2.4). 1.3). The critical angle in this case is about 33 °.

  The low refractive index body 606 does not necessarily need to completely fill the space between the columnar light emitting portions 604 that are formed apart from each other, and is disposed at a position that is in contact with at least the side wall of the columnar light emitting portion 604. Just do it. For example, the low refractive index body 606 may be formed in a thin film on the side wall of the columnar light emitting unit 604, and a reflective film may be formed on the thin film low refractive index body 606. In this case, a laminated film of the low refractive index body 606 and the reflective film is formed on the side wall of the columnar light emitting unit 604, and light generated in the columnar light emitting unit leaks to the adjacent light emitting unit (pixel). Can be almost completely prevented. In the case of such a configuration, it is preferable that gaps left between the plurality of light emitting units 604 are further filled with resin or the like.

  As the size of the columnar light emitting unit 604, for example, a diameter of 10 nm to 1 mm can be adopted, and a length of 100 nm to 1 mm can be adopted. More preferably, a diameter of 100 nm to 10 μm can be adopted, and a length of 1 μm to 100 μm can be adopted.

  In the self-luminous display according to this embodiment, as described below, the light-emitting portion 604 can be directly formed on the substrate 601 by a VLS (Vapor Liquid Solid) method or the like, and the columnar light-emitting portion is nanoscale. And can be miniaturized to microscale. For this reason, an extremely high-definition self-luminous display can be configured by miniaturizing pixels, and can be suitably used as a display for mobile use. On the other hand, when the columnar light emitting portion 604 is made relatively large, it can be suitably used as a large display or a high luminance display.

  In the self-luminous display 600 of the sixth embodiment, the low refractive index body 606 having a refractive index smaller than that of the semiconductor constituting the light emitting unit 604 is in contact with the side walls of the light emitting units discretely arranged on the substrate 601. When the light generated inside the light emitting unit is incident on the low refractive index body 606 at an angle larger than the critical angle, the light is totally reflected and stays inside the light emitting unit 604, and finally the light emitting unit 604. Radiated from the top. Therefore, light leakage from a certain pixel to an adjacent pixel is suppressed, and blurring of an image can be reduced. Furthermore, since the amount of light emission can be suppressed by the amount of light leakage, the power consumption of the self-luminous display 600 can be suppressed.

  In addition, in the self-luminous display 600 of this embodiment, since the first wirings 661a, 662b, and 662c are arranged on the back surface of the substrate 601, the light emitting portion 604 can be directly formed on the substrate 601. . Accordingly, since it becomes easy to form the light emitting portion 604 with good crystallinity by using a substrate with good crystallinity, the light emission efficiency of the light emitting portion can be easily improved, and the self-luminous display can be easily reduced in consumption. It can be powered.

  18-24 is a figure explaining an example of the procedure which manufactures the self-light-emitting display 600 of 6th Embodiment. Hereinafter, the manufacturing method of the self-luminous display 600 of 6th Embodiment is demonstrated using those figures.

  First, as shown in FIG. 18, an insulating substrate 601, for example, a sapphire substrate, an undoped GaN substrate, and an undoped silicon substrate are prepared.

  Next, as shown in FIG. 19, a catalyst metal such as Ni or Au is deposited on the entire surface of the substrate by sputtering, and dot-shaped metal catalyst particles 621 are formed on the substrate 601 by a photolithography process. Thereafter, the dot-shaped metal catalyst particles 621 can be further aggregated by annealing. The particle diameter of the metal catalyst particles may be determined according to the thickness of the columnar light emitting portion 604 to be formed later. The thickness of the columnar light emitting unit 604 can be set to, for example, 100 nm to 10 μm. This step is a step of defining positions where the plurality of light emitting units 604 are formed on the substrate 601, and constitutes a light emitting unit position defining step.

  Next, a light emitting part formation epitaxial process is performed. Specifically, as shown in FIG. 20, the first conductivity type semiconductor 607 (for example, AlGaN), the active layer 609 (for example, GaN), and the second conductivity type semiconductor 608 (for example, AlGaN) are grown at a growth temperature of 800 ° C. by the VLS method. Are epitaxially grown in this order.

Here, as the gas to be used, TMG, TMA, and NH ₃ can be used when growing AlGaN, and H ₂ can be used as a carrier gas. Moreover, when growing GaN, TMG, NH ₃ and H ₂ can be used. In addition, as an impurity imparting conductivity to the semiconductor, SiH ₄ may be added when the n-type conductivity type is used, and Cp ₂ Mg may be added when the p-type conductivity type is used. The first conductivity type semiconductor 607, the active layer 609, and the second conductivity type semiconductor 608 constitute a light emitting unit 604. In addition, the length of the light emission part 604 can be 1 micrometer-50 micrometers, for example.

  Next, after removing the metal catalyst particles 621 by etching, a low refractive index body forming step is performed. Specifically, as shown in FIG. 21, the side walls of a plurality of light emitting units 604 discretely formed on a substrate 601 with a low refractive index body 606 having a refractive index smaller than that of the semiconductor constituting the light emitting unit. Place it so that it touches.

  Here, specifically, gaps between the plurality of light emitting units 604 can be filled with resin or SOG. At this time, if the upper surface of the light emitting unit 604 is filled with the low refractive index body 606, etching is appropriately performed until the upper surface of the light emitting unit 604 is exposed.

  Next, an upper wiring process is performed. Specifically, as shown in FIG. 22, after ITO or IZO is uniformly deposited on the upper surfaces of the low-refractive index body 606 and the light-emitting portion 604, a photolithography process is performed on the upper surface of the low-refractive index body 606. Second wirings 603a, 603b, and 603c for connecting a plurality of light emitting portions are formed.

  Next, as shown in FIG. 23, contact holes 662 that open to the back surface of the substrate 601 are formed from the back surface of the substrate 601 until reaching the first conductivity type semiconductor 607 of the light emitting portion 604.

  Thereafter, a lower wiring process is performed. Specifically, as shown in FIG. 24, the contact hole 662 is filled with metal, and first wirings 661a, 662b, 662c made of metal are formed by patterning. Subsequently, any one of the red phosphor 610R, the green phosphor 610G, and the blue phosphor 610B is applied onto each light emitting unit 604 (each pixel) by inkjet.

  In addition, when the size of the light emitting unit 604 is small, specifically, when the diameter of the light emitting unit 604 is 30 μm or less, a normal phosphor (particle size is 10 to 20 μm) is used for each pixel. It becomes difficult to apply the phosphor. In this case, it is preferable to apply a nanoparticle phosphor having a diameter of phosphor particles of 1 μm or less, more preferably about 10 nm to 100 nm. Thereby, the red pixel 605R, the green pixel 605G, and the blue pixel 605B are defined, and the self-luminous display 600 is completed.

  According to the above procedure, the low refractive index body 606 having a refractive index lower than that of the first semiconductor 607 and the second semiconductor 608 constituting the light emitting portion 604 is formed so as to be in contact with at least the side wall portion of the light emitting portion 604. Therefore, when the light generated inside the light emitting unit 604 is incident on the low refractive index body 606 at an angle larger than the critical angle, the light is totally reflected and stays inside the light emitting unit 604, and finally the light emitting unit 604. Will be emitted from the top. Therefore, light leakage from a certain pixel to an adjacent pixel can be suppressed, and bleeding of an image can be reduced. Furthermore, since the amount of light emission can be suppressed by the amount of light leakage, the power consumption of the self-luminous display 600 can be suppressed.

  Further, since the light emitting portions 604 are collectively formed at a predetermined position on the substrate 601 by epitaxial growth, it is not necessary to mount a plurality of light emitting portions 604 on the substrate one by one. Therefore, the manufacturing process can be greatly simplified. In addition, since the first wirings 661a, 662b, and 662c are formed on the back surface of the substrate 601 and the light emitting portion 604 is directly formed on the substrate 601 by epitaxial growth, the light emitting portion 604 with good crystallinity is formed. It becomes easy. Therefore, the light emission efficiency of the light emitting unit 604 can be improved, and the self light emitting display 600 can be further reduced in power consumption.

(Seventh embodiment)
FIG. 25 is a plan view of a part of the self-luminous display according to the seventh embodiment of the present invention, and FIG. 26 is a cross-sectional view taken along the line CC in FIG.

  The self-luminous display 700 of the seventh embodiment differs greatly from the self-luminous display of the first embodiment in that a first conductive type semiconductor film and a second conductive type semiconductor film are stacked in this order on a substrate 701. A plurality of columnar light emitting portions are formed by forming the laminated film and then etching the laminated film.

  In addition, the lower wiring (first wiring) is not disposed between the substrate and the light emitting unit, but is disposed on the back surface of the substrate and electrically connected to the light emitting unit through a contact hole formed in the substrate. is there.

  As shown in FIGS. 25 and 26, in the self-luminous display 700 of the seventh embodiment, a plurality of first wirings 761a, 761b, and 761c are formed on the back surface of the substrate 701, and the plurality of first wirings 761a, The first wirings 761a, 761b, and 761c extend in one direction on the substrate 701 as the first direction.

  On the substrate 701, columnar light emitting portions 704 that emit ultraviolet light are formed at substantially equal intervals, and a pixel is configured for each light emitting portion 704. Each columnar light emitting portion 704 is electrically connected to one of the first wirings 761 a, 761 b, and 761 c through a contact hole 762 that penetrates the substrate 701. The columnar light-emitting portion 704 is formed by sequentially laminating a first conductivity type semiconductor 707, an active layer 709, and a second conductivity type semiconductor 708 from the side close to the first wirings 761a, 761b, and 761c. A space between a plurality of columnar light emitting portions 704 discretely formed on the substrate 701 is filled with a low refractive index body 706 having a refractive index lower than that of a semiconductor constituting the light emitting portion 704.

  A plurality of second wirings 703a, 703b, and 703c made of a transparent electrode are disposed on the light emitting unit 704 and the low refractive index body 706, and the plurality of second wirings 703a, 703b, and 703c are spaced apart from each other. Each of the second wirings 703a, 703b, and 703c extends in the other direction as a second direction intersecting with one direction on the substrate 701.

  The first conductive type semiconductor 707 of each light emitting portion 704 constituting each pixel is connected to one of the first wirings 761a, 761b, and 761c, and the second conductive type semiconductor 708 includes the second wiring 703a, It is connected to either 703b or 703c. By selecting the first wiring and the second wiring one by one, a specific pixel, that is, a specific light emitting unit 704 can be selected.

  On each light emitting unit 704, a red phosphor 710R that converts ultraviolet light into red light, a green phosphor 710G that converts ultraviolet light into green light, or an ultraviolet light is arranged. A blue phosphor 710B for converting the light into blue light is arranged. The pixel in which the red phosphor 710R is arranged constitutes a red pixel 705R, the pixel in which the green phosphor 710G is arranged constitutes a green pixel 705G, and the pixel in which the blue phosphor 710B is arranged is a blue pixel 705B. Is configured.

  In FIG. 25, three red pixels 705R, green pixels 705G, and blue pixels 705B are drawn, but the number of pixels of each color is not limited to three, and any desired number can be adopted. In FIG. 25 and FIG. 26, one light emitting unit 704 forms one pixel, but a plurality of light emitting units 704 may form one pixel. When a plurality of light emitting units 704 form one pixel, even if a certain light emitting unit 704 causes a lighting failure, it can be prevented that the pixel does not light up at all, so that the pixel failure is made inconspicuous. it can.

  As the substrate 701, a sapphire substrate, undoped GaN, or the like can be used. Since the substrate 701 has a contact hole penetrating therethrough and the first wiring is formed on the back surface thereof, the substrate 701 needs to have insulating properties. In addition, since the light emitting portion 704 is epitaxially grown on the substrate 701, the substrate 701 preferably has good crystallinity and a lattice constant close to that of the semiconductor constituting the light emitting portion 704. For the first wirings 761a, 761b, and 761c, for example, a metal such as copper, gold, or tungsten can be used. The contact hole 762 can be filled with the same metal. For the second wirings 703a, 703b, and 703c, for example, transparent electrodes such as ITO and IZO can be used.

  Further, n-type AlGaN or n-type GaN can be used for the first conductivity type semiconductor 707 constituting the light emitting unit 704, and p-type AlGaN or p-type GaN is used for the second conductivity type semiconductor 708. For the active layer 709, AlGaN or the like can be used.

  Note that the cross-section of the columnar light-emitting portion 704 may be a circle or a polygon such as a triangle, a quadrangle, or a hexagon. When n-type GaN is used as the first conductivity type semiconductor and p-type GaN is used as the second conductivity type semiconductor, the resistance of the p-type GaN is reduced by n-type GaN. Therefore, the length of the second conductivity type semiconductor 708 made of p-type GaN is made longer than that of the first conductivity type semiconductor 707 made of n-type GaN, as shown in FIG. It is preferable to shorten it. As the low refractive index body 706, SOG or transparent resin can be used.

  The low refractive index body 706 has a refractive index smaller than that of the semiconductors (the first conductivity type semiconductor 707 and the second conductivity type semiconductor 708) constituting the light emitting unit 704. Therefore, when the light generated in the light emitting unit 704 is incident on the interface between the light emitting unit 704 and the low refractive index body 706 from the inside, if the incident angle is larger than the critical angle, the light is totally reflected at the interface. Stay inside 704. Therefore, light leaking from the side wall of the light emitting unit 704 to the adjacent light emitting unit (pixel) can be reduced.

  The substances constituting the light emitting portion 704 and the low refractive index body 706 are preferably such that the light emitting portion 704 is made of GaN (refractive index of about 2.4), and the low refractive index body 706 is a transparent resin such as an epoxy resin or a silicon resin ( Refractive index about 1.5). The critical angle in this case is about 39 °. In addition, the substance constituting the light emitting portion 704 and the low refractive index body 706 is more preferably made of the light emitting portion 704 made of GaN (refractive index about 2.4), and the low refractive index body 706 is made of porous SOG (refractive index about 1.3). The critical angle in this case is about 33 °.

  Note that the low refractive index body 706 does not necessarily need to completely fill the space between the columnar light-emitting portions 704 that are formed to be spaced apart from each other, and may be in contact with at least the side wall of the columnar light-emitting portion 704. For example, the low refractive index body 706 may be formed in a thin film on the side wall of the columnar light emitting unit 704, and a reflective film may be formed on the thin film low refractive index body 706. In this case, since the laminated film of the low refractive index body 706 and the reflective film is formed on the side wall of the columnar light emitting unit 704, the light generated in the columnar light emitting unit is adjacent to the adjacent light emitting unit (pixel). Leaking can be almost completely prevented. In the case of such a configuration, it is preferable that gaps left between the plurality of light emitting units 704 are further filled with resin or the like.

  As the size of the columnar light-emitting portion 704, for example, a dimension between 10 nm and 1 mm can be adopted as the diameter, and a dimension between 100 nm and 100 μm can be adopted as the length. More preferably, the diameter of the columnar light-emitting portion 704 can adopt a dimension between 100 nm and 10 μm, and the length can adopt a dimension between 1 μm and 10 μm.

  In the self-luminous display 700 according to the seventh embodiment, as described below, a semiconductor multilayer film in which a semiconductor film of a first conductivity type and a semiconductor film of a second conductivity type are stacked in this order on a substrate is formed. By etching this laminated film, a plurality of columnar light emitting portions 704 can be formed at a time, and the columnar light emitting portions can be miniaturized to nanoscale or microscale. For this reason, it is possible to make an extremely high-definition self-luminous display by miniaturizing pixels, which is suitable as a display for mobile use. On the other hand, when the columnar light emitting portion 704 is made relatively large, it is suitable as a large display or a high brightness display.

  In the self-luminous display 700 of the seventh embodiment, the low refractive index body 706 having a refractive index smaller than that of the semiconductor constituting the light emitting unit 704 is in contact with the side walls of the light emitting units 704 that are discretely arranged on the substrate 701. Therefore, the light generated inside the light emitting unit 704 is totally reflected when it enters the low refractive index body 706 at an angle larger than the critical angle, and stays inside the light emitting unit 704. Finally, the light emitted from the light emitting unit 704 Radiated from the top. Therefore, light leakage from a certain pixel to an adjacent pixel is suppressed, and blurring of an image can be reduced. Furthermore, since the amount of light emission can be suppressed by the amount of light leakage, the power consumption of the self-luminous display 700 can be suppressed.

  In the self-luminous display 700 of the seventh embodiment, since the first wirings 761a, 762b, and 762c are arranged on the back surface of the substrate 701, the light emitting unit 704 can be directly formed on the substrate 701. . Therefore, it is easy to form the light emitting portion 704 with good crystallinity by using a substrate with good crystallinity. Therefore, it is possible to improve the light emission efficiency of the light emitting unit 704 and reduce the power consumption of the self light emitting display.

  FIG. 27 to FIG. 34 are diagrams for explaining an example of a method for forming the self-luminous display 700 of the seventh embodiment. Hereinafter, an example of a method for forming the self-luminous display 700 will be described.

  First, as shown in FIG. 27, an insulating substrate 701, for example, a sapphire substrate, an undoped GaN substrate, an undoped silicon substrate, or the like is prepared.

Next, as shown in FIG. 28, a first conductive type semiconductor film 763 (eg, n-type AlGaN), an active layer 764 (eg, GaN), and a second conductive type semiconductor are grown on a substrate 701 at a growth temperature of 900 ° C. A film 765 (for example, p-type AlGaN) is epitaxially grown in this order. As the gas to be used, TMG, TMA, and NH ₃ can be used when growing AlGaN, and H ₂ can be used as a carrier gas. Further, when growing GaN, TMG, NH ₃ and H ₂ may be used. In addition, as an impurity imparting conductivity to the semiconductor, SiH ₄ may be added when an n-type conductivity type is used, and Cp ₂ Mg may be added when a p-type conductivity type is used. The thicknesses of the first conductive type semiconductor film 763 and the second conductive type semiconductor film 765 can be set to 5 μm and 200 nm, respectively, for example.

  Next, as shown in FIG. 29, a photoresist 766 is patterned on the second conductivity type semiconductor 765. Thereafter, as shown in FIG. 30, the second conductive type semiconductor film 765, the active layer 764, and the first conductive type semiconductor film 763 are anisotropically etched using the patterned photoresist 766 as a mask to obtain a substrate 701. A plurality of columnar light emitting portions 704 are formed thereon (light emitting portion forming etching step).

  here. The remaining first-conductivity-type semiconductor film 763, active layer 764, and second-conductivity-type semiconductor film 765 constitute the first-conductivity-type semiconductor 707, active layer 709, and second-conductivity-type semiconductor that constitute the light emitting unit 704, respectively. A semiconductor film 708 is formed. In addition, in order to remove the etching damage left in the light emitting portion 704 formed in a columnar shape after this, the surface of the light emitting portion 704 may be wet etched with 20% to 30% TMAH (Tetra Methyl Ammonium Hydroxide).

  In this case, not only the etching damage in the vicinity of the surface of the light emitting portion 704 can be removed, but also almost the entire surface can be made to be a c-plane due to the difference in the etching rate depending on the plane orientation. Therefore, the light emission distribution on the surface of the light emitting portion 704 can be made uniform, and the light emission efficiency can be improved. Alternatively, the etching damage near the surface of the light emitting portion 704 can also be removed by immersing the surface of the light emitting portion 704 in hot phosphoric acid at 140 ° C. for several minutes.

  Next, as shown in FIG. 31, low refraction having a refractive index smaller than the refractive index of the semiconductor constituting the light emitting portion so as to be in contact with the side walls of the plurality of light emitting portions 704 discretely formed on the substrate 701. The index body 706 is disposed (low refractive index body forming step).

  Specifically, gaps between the plurality of light emitting units 704 can be filled with resin or SOG. At this time, when the upper surface of the light emitting unit 704 is filled with the low refractive index body 706, etching is appropriately performed until the upper surface of the light emitting unit 704 is exposed.

  Next, as shown in FIG. 32, after ITO or IZO is uniformly deposited on the upper surfaces of the low refractive index body 706 and the light emitting portion 704, a photolithography process is performed to form an upper surface of the low refractive index body 706. Second wirings 703a, 703b, and 703c for connecting a plurality of light emitting units along the upper side are formed (upper wiring process).

  Next, as shown in FIG. 33, contact holes 762 that open to the back surface of the substrate 701 are formed from the back surface of the substrate 701 until reaching the first conductivity type semiconductor 707 of the light emitting portion 704. After that, as shown in FIG. 34, the contact holes 762 are filled with metal, and the first wirings 761a, 762b, and 762c made of metal are formed by patterning (lower wiring process), and on each light emitting portion 704 (each pixel). Further, any one of the red phosphor 710R, the green phosphor 710G, and the blue phosphor 710B is applied by inkjet.

  In addition, when the size of the light emitting unit 704 is small, specifically, when the diameter of the light emitting unit 704 is 30 μm or less, a normal phosphor (particle size is 10 to 20 μm) is used for each pixel. It becomes difficult to apply the phosphor. In this case, it is preferable to apply a nanoparticle phosphor having a diameter of phosphor particles of 1 μm or less, more preferably about 10 nm to 100 nm. Thereby, the red pixel 705R, the green pixel 705G, and the blue pixel 705B are defined, and the self-luminous display 700 is completed.

  According to the above procedure, the low refractive index body 706 having a refractive index lower than that of the first semiconductor 707 and the second semiconductor 708 constituting the light emitting unit 704 is formed so as to be in contact with at least the side wall of the light emitting unit 704. When light generated inside the light emitting unit 704 is incident on the low refractive index body 706 at an angle larger than the critical angle, it is totally reflected and stays inside the light emitting unit 704, and finally radiates from the upper part of the light emitting unit 704. Will be. Therefore, light leakage from a certain pixel to an adjacent pixel is suppressed, and blurring of an image can be reduced. Furthermore, since the amount of light emission can be suppressed by the amount of light leakage, the power consumption of the self-luminous display 700 can be suppressed.

  In addition, each of the plurality of columnar light emitting portions 704 etches the substrate on which the semiconductor stacked film in which the first conductive type semiconductor film 763 and the second conductive type semiconductor film 765 are stacked in this order is formed. It is formed by. For this reason, it is not necessary to mount the plurality of light emitting portions 704 on the substrate one by one, and the manufacturing process can be greatly simplified.

  Further, first wirings 761 a, 762 b, and 762 c are formed on the back surface of the substrate 701, and a first conductive type semiconductor film 763 and a second conductive type semiconductor film 765, part of which becomes the light emitting portion 704, Since the epitaxial growth is performed directly on the substrate 701, it is easy to form the light emitting portion 704 with good crystallinity. Therefore, it is possible to improve the light emission efficiency of the light emitting unit and further reduce the power consumption of the self light emitting display.

(Eighth embodiment)
FIG. 35 is a circuit diagram of the pixels constituting the self-luminous display according to the eighth embodiment of the present invention. FIG. 36 is a plan view of a part of the self-luminous display of the eighth embodiment, FIG. 37 is a cross-sectional view taken along the arrow DD in FIG. 36, and FIG. It is sectional drawing.

  The self-luminous display of the eighth embodiment is different from the self-luminous display of the first embodiment in that it is actively driven. In the self-luminous display of the eighth embodiment, a plurality of signal lines, a plurality of scanning lines, and switching transistors and driving transistors provided at intersections of the plurality of signal lines and the scanning lines are formed on the substrate. The first conductivity type semiconductor of each light emitting unit is electrically connected to the drain of the driving transistor, and the second conductivity type semiconductor of each light emitting unit is formed on the plurality of light emitting units. The self-luminous display is connected to a common transparent electrode and is actively driven.

  More specifically, as shown in FIG. 35, the signal line 831 and the scanning line 832 intersect each other in each pixel. The signal line 831 is connected to the source of the switching transistor 835 of each pixel, while the scanning line 832 is connected to the gate of the switching transistor 835 of each pixel. The drain of the switching transistor 835 is connected to the pixel capacitor 837 and the gate of the driving transistor 836. In addition, a power supply line 833 is connected to the source of the driving transistor 836, and one terminal of the light emitting portion 804 is connected to the drain of the driving transistor 836. In addition, the other terminal of the light emitting unit 804 is connected to the upper common electrode 803.

  As shown in FIGS. 36 to 38, a first wiring layer 841 and a second wiring layer 842 made of other crystalline silicon are formed on a substrate 801, respectively. An insulating film layer 845 is formed between the first wiring layer 841 and the second wiring layer 842 except for the connection portion 839.

  The scanning line 832 includes the first wiring layer 841. In addition, the signal line 831 and the power supply line 833 are formed of the second wiring layer 842.

  In the switching transistor 835, part of the first wiring layer 841 forms a gate and part of the second wiring 842 forms a source, a channel, and a drain. The second wiring 842 is provided with an undoped region 843 (see FIG. 38), which becomes a channel of the switching transistor 835. In the driving transistor 836, part of the first wiring layer 841 forms a gate, and part of the second wiring 842 forms a source, a channel, and a drain. The second wiring 842 is provided with an undoped region 844 (see FIG. 37), which becomes a channel of the driving transistor 836.

  The pixel capacitor 837 uses a capacitance between the second wiring 842 extending from the drain of the switching transistor 835 and the first electrode 841 connected to the upper common electrode 803 through the contact hole 838. .

  The light emitting portion 804 including the first conductivity type semiconductor 807, the second conductivity type semiconductor 808, and the active layer 809 is connected to the drain of the driving transistor 836 including the second wiring layer 842 and the upper common electrode 803.

  One of a red phosphor 810R, a green phosphor (not shown), and a blue phosphor (not shown) is formed on the upper common electrode 803 on the light emitting unit 804, and each of the red pixels 805R, A green pixel 805G and a blue pixel 805B are obtained.

  The procedure for forming the self-luminous display of the present embodiment is generally as follows. First, a signal line 831, a scanning line 832, a power supply line 833, a switching transistor 835, a driving transistor 836, and a pixel capacitor 837 are formed on a substrate using a TFT process.

  Next, the light emitting unit 804 is formed by the method described in the first embodiment. Thereafter, the upper common electrode 834 is formed. This may be performed in the same manner as the method for forming the second wiring in the first embodiment. However, since it is a common electrode, it is not necessary to pattern as in the case of the first embodiment.

  According to the above configuration, since each pixel is actively driven, the drive voltage can be lowered, the life of the light emitting unit can be extended, and interference between pixels can be effectively prevented.

(Ninth embodiment)
FIG. 39 is a configuration diagram of a mobile electronic device 900 according to the ninth embodiment of this invention.

  The mobile electronic device 900 includes a self-luminous display 951, a driver 952 that drives the self-luminous display 951, a calculation unit 953, an input interface 954, a communication circuit 955, and an antenna 856.

  The self-luminous display 951 includes the above-described self-luminous display of the present invention. Since the mobile electronic device 900 includes the self-luminous display 951 of the present invention, lower power consumption can be realized than a liquid crystal display having a backlight. Further, since the mobile electronic device 900 includes the self-luminous display 951 of the present invention, the mobile electronic device 900 has less blur of the image and can have high definition, and power consumption compared to other self-luminous displays. Can be reduced.

  The mobile electronic device 900 includes a communication circuit 955 and an antenna 956 and has a communication function. In addition, the mobile electronic device 900 includes an input interface 954 and has functions such as a telephone, a videophone, use of the Internet, use of mail, and browsing of a distributed book. In addition, the mobile electronic device 900 may be provided with functions such as a dictionary, spreadsheet, and word processor.

  In the present invention, an independent pixel may be formed for each light emitting unit, or a plurality of light emitting units may be included in one pixel.

  In the present invention, the first conductivity type semiconductor and the second conductivity type semiconductor may not necessarily face each other in the normal direction of the substrate, and may face each other in a direction other than the normal direction of the substrate. It may be.

  In the present invention, the first conductivity type may be n-type, the second conductivity type may be p-type, the first conductivity type may be p-type, and the second conductivity type may be n-type. May be.

  Further, for example, an invention obtained by combining a part or all of two or more different embodiments described above constitutes a new embodiment of the present invention. It goes without saying that an invention created in combination with the invention of a certain modification forms a new embodiment of the present invention. To be exact, the invention created by combining two or more invention specific matters from the contents of all the embodiments and all the modifications performed in the description of the above specification is a new implementation of the present invention. Of course, it is included in the form.

1, 101, 201, 301, 401, 501, 601, 701, 801 Substrate 102a, 102b, 102c, 202b, 302b, 402b, 502b, 661a, 661b, 661c, 761a, 761b, 761c First wiring 103a, 103b , 103c, 203a, 203b, 203c, 303a, 303b, 303c, 303d, 403a, 403b, 403c, 403d, 503a, 503b, 503c, 503d, 603a, 603b, 603c, 703a, 703b, 703c second wiring 104, 204,304,404,604,704,804,504B, 504G, 504R, 504Y Light emitting part 105B, 205B, 305B, 405B, 605B, 705B, 805B Blue pixel 105G, 205G, 305G, 405G, 605G, 705G, 805G Green Pixel 105R, 205R, 305R, 505R, 6 5R, 705R, 805R Red pixel 106,206,306,406,506,606,706 Low refractive index body 107,207,307,407,607,707,807,507R, 507Y, 507G, 507B First conductivity type Semiconductor 108,208,308,408,608,708,808,508R, 508Y, 508G, 508B Second conductivity type semiconductor 109,209,309,409,609,709,809,764,509R, 509Y, 509G, 509B Active layer 110B, 310B, 610B, 710B Blue phosphor 110G, 211G, 310G, 411G, 610G, 710G Green phosphor 110R, 211R, 310R, 610R, 710R, 810R Red phosphor 121 Metal catalyst particles 200, 300, 400 , 500,600,700,951 Self-luminous display 305Y, 405Y Yellow pixel 3 0Y, 411Y, 510Y Yellow phosphor 411 Phosphor 662,762 Contact hole 763 First conductivity type semiconductor film 765 Second conductivity type semiconductor film 766 Photoresist 803,834 Common electrode 835 Switching transistor 836 Drive transistor 838 Contact hole 900 Mobile electronics

Claims (24)

A substrate,
A plurality of columnar light emitting portions disposed on the substrate at intervals,
Each of the light emitting units includes a first conductivity type semiconductor and a second conductivity type semiconductor,
A self-luminous display comprising: a low refractive index body that contacts a side wall of each of the light emitting units and has a refractive index lower than that of the light emitting unit. The self-luminous display according to claim 1,
The self-luminous display characterized in that the upper surface of the light emitting part on the side opposite to the substrate side is in contact with a high refractive index body larger than the low refractive index body. The self-luminous display according to claim 1 or 2,
A plurality of first wirings disposed on the substrate and extending in a first direction at intervals from each other;
A plurality of second wirings disposed on the plurality of light emitting units and extending in a second direction at intervals from each other;
The first conductivity type semiconductor faces the second conductivity type semiconductor in the normal direction of the substrate,
The first conductivity type semiconductor of each light emitting unit is electrically connected to any one of the plurality of first wirings, while the second conductivity type semiconductor of each light emitting unit is , Electrically connected to any one of the plurality of second wirings,
A self-luminous display that is passively driven. The self-luminous display according to claim 3,
Each said 2nd wiring is a transparent electrode, The self-light-emitting display characterized by the above-mentioned. The self-luminous display according to claim 3 or 4,
The self-luminous display, wherein the light emitting unit is made of an inorganic semiconductor. The self-luminous display according to claim 1 or 2,
A common transparent electrode formed on the plurality of light emitting portions and electrically connecting the second conductivity type semiconductors of the plurality of light emitting portions;
A driving transistor disposed on the substrate and having a gate and a drain electrically connected to the first conductivity type semiconductor of the light emitting unit;
A switching transistor having a drain electrically connected to the gate of the driving transistor,
A self-luminous display that is actively driven. The self-luminous display according to any one of claims 1 to 6,
The light emitting unit has a GaN layer. The self-luminous display according to claim 7,
The self-luminous display, wherein the light emitting unit includes an active layer made of any one of InGaN, AlGaN, or AlInGaN. The self-luminous display according to any one of claims 1 to 8,
Comprising a crystalline conductive film pattern disposed on the substrate;
The light emitting part is disposed on the conductive film pattern,
The light-emitting unit is made of a crystalline inorganic semiconductor. The self-luminous display according to claim 9,
The self-luminous display, wherein the height of the light emitting part is larger than the width of the light emitting part. The self-luminous display according to claim 9 or 10,
The crystalline conductive film pattern is made of silicon or a laminated film obtained by sequentially laminating silicon and GaN from the substrate side,
The self-luminous display, wherein the light emitting unit includes a GaN layer. The self-luminous display according to any one of claims 1 to 11,
A self-luminous display characterized in that a nanoparticle phosphor is disposed at a position where light emitted from the light emitting part can reach. The self-luminous display according to any one of claims 1 to 12,
Each light emitting unit is a part of a blue pixel, a green pixel, or a red pixel,
Each of the light emitting units emits blue light,
The green pixel has a phosphor that converts blue light generated in the light emitting unit into green light,
The self-luminous display, wherein the red pixel includes a phosphor that converts blue light generated in the light emitting unit into red light. The self-luminous display according to any one of claims 1 to 12,
Each light emitting unit is a part of a blue pixel, a green pixel, or a red pixel,
Each light emitting part emits ultraviolet light,
The blue pixel has a phosphor that converts ultraviolet light generated in the light emitting unit into blue light,
The green pixel has a phosphor that converts ultraviolet light generated in the light emitting unit into green light,
The self-luminous display, wherein the red pixel has a phosphor that converts ultraviolet light generated in the light emitting unit into red light. The self-luminous display according to any one of claims 1 to 12,
Each light emitting unit is a part of a blue pixel, a green pixel, a yellow pixel, or a red pixel,
The plurality of light emitting units emit blue light,
The green pixel has a phosphor that converts blue light generated in the light emitting unit into green light, and the yellow pixel has a phosphor that converts blue light generated in the light emitting unit into yellow light,
The self-luminous display, wherein the red pixel includes a phosphor that converts blue light generated in the light emitting unit into red light. The self-luminous display according to any one of claims 1 to 12,
Each light emitting unit is a part of a blue pixel, a green pixel, a yellow pixel, or a red pixel,
Each light emitting part emits ultraviolet light,
The blue pixel has a phosphor that converts ultraviolet light generated in the light emitting unit into green light,
The green pixel has a phosphor that converts ultraviolet light generated in the light emitting unit into green light,
The yellow pixel has a phosphor that converts ultraviolet light generated in the light emitting unit into yellow light,
The self-luminous display, wherein the red pixel has a phosphor that converts ultraviolet light generated in the light emitting portion into red light. The self-luminous display according to any one of claims 1 to 12,
Each of the light emitting units is a part of any one of a plurality of predetermined types of pixels,
Each of the light emitting units emits light having a predetermined spectral distribution corresponding to the type of pixel to which the light emitting unit belongs. A light emitting part position defining step for defining a plurality of positions spaced apart from each other to form a plurality of light emitting parts on the substrate;
Forming a light-emitting part that forms at least a part of the light-emitting part by sequentially epitaxially growing a first-conductivity-type semiconductor and a second-conductivity-type semiconductor at a position where each light-emitting part is formed on the substrate. An epitaxial process;
A low refractive index body having a refractive index lower than that of the first conductivity type semiconductor and lower than that of the second conductivity type semiconductor is brought into contact with the side wall portion of each light emitting portion. A low-refractive-index body forming step arranged as described above. The method of manufacturing a self-luminous display according to claim 18,
The light emitting portion position defining step includes a step of arranging metal catalyst particles at a predetermined position on the substrate,
The light-emitting portion forming epitaxial step includes a step of epitaxially growing a semiconductor by a Vapor Liquid Solid method using the metal catalyst particles as a catalyst. The method of manufacturing a self-luminous display according to claim 18,
The light emitting portion position defining step includes a step of forming a mask having an opening connected to a predetermined position on the substrate on the substrate,
The method for manufacturing a self-luminous display, wherein the light emitting portion forming epitaxial step includes a step of epitaxially growing a semiconductor in the opening. In the manufacturing method of the self-luminous display as described in any one of Claim 18-20,
The low refractive index body forming step includes a step of forming a low refractive index body so as to fill a gap between the light emitting portions,
A method of manufacturing a self-luminous display, comprising: an upper wiring step of forming a wiring for connecting the second conductivity type semiconductor on an upper surface of the low refractive index body. The method of manufacturing a self-luminous display according to claim 21,
The light emitting portion is made of a crystalline inorganic semiconductor,
A lower wiring forming step of forming a lower wiring on the substrate;
The lower wiring step includes a step of patterning a crystalline conductor film on the substrate,
The light emitting portion position defining step defines the position of the light emitting portion with respect to the crystalline conductor film. On the substrate, a semiconductor stacked film formed by stacking a first conductive type semiconductor film and a second conductive type semiconductor film in this order is formed, and then etching is performed. A light emitting portion forming etching step of forming a plurality of columnar light emitting portions having a second conductivity type semiconductor;
A low refractive index body having a refractive index lower than that of the first conductivity type semiconductor and lower than that of the second conductivity type semiconductor is brought into contact with the side wall portion of each light emitting portion. A low-refractive-index body forming step arranged as described above.   A mobile electronic device comprising the self-luminous display according to any one of claims 1 to 17.

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