JP2012238014A - Mask blank and method for manufacturing transfer mask - Google Patents

Abstract

The present invention provides a mask blank manufacturing method and a mask blank that do not cause charge-up and that do not cause alignment mark defects.
A mask blank for electron beam drawing in which a resist pattern is formed by electron beam drawing. The mask blank is used for etching a transfer pattern forming thin film 2 and a transfer pattern forming thin film 2 on a substrate 1. An etching mask film 3 made of an inorganic material having resistance is formed in this order, and the transfer pattern forming thin film 2 is made of a material having conductivity that does not charge up when drawing and patterning an electron beam. The etching mask film 3 is formed from the main surface to the side surface or chamfered surface of the substrate. The etching mask film 3 does not exist on at least the side surface of the substrate, and is formed so that the transfer pattern forming thin film 2 is exposed.
[Selection] Figure 1

Description

The present invention relates to a mask blank used in the manufacture of semiconductor devices, display devices (display panels), and the like, and a method for manufacturing a transfer mask.

Miniaturization of semiconductor devices and the like has an advantage of improving performance and functions (high-speed operation, low power consumption, etc.) and cost reduction, and miniaturization is increasingly accelerated. Lithography technology supports this miniaturization, and a transfer mask is a key technology along with an exposure apparatus and a resist material.
In recent years, phase enhancement technology and other super-resolution technologies (Resolution Enhancement Technology: RET)
The photomask which applied is used. The phase shift mask is a photomask that can improve the resolution of the transfer pattern by utilizing the light interference effect of the phase shifter.
In addition, since photolithography when finely processing a semiconductor substrate is usually performed by reduced projection exposure, the pattern size formed on the transfer mask is about four times as large as the pattern size formed on the semiconductor substrate. Has been. However, in photolithography with a DRAM half pitch (hp) of 45 nm or more according to the semiconductor design rule, the size of the circuit pattern on the mask is smaller than the wavelength of the exposure light, so the circuit pattern is transferred as designed. When reduced projection exposure is performed using a transfer mask on which is formed, the shape according to the transfer pattern cannot be transferred to the resist film on the semiconductor substrate due to the influence of exposure light interference or the like.
Therefore, as a mask using super-resolution technology, optical proximity correction (Optical Proximity Ef
An OPC mask or the like to which a correction technique of an optical proximity effect that deteriorates transfer characteristics is performed by performing (fect correction: OPC) is used (Patent Document 1). For example, it is necessary to form an OPC pattern (for example, an assist bar or a hammer head having a line width of less than 100 nm) having a size equal to or smaller than a half of the circuit pattern on the OPC mask.

In order to form a fine pattern having a DRAM half pitch (hp) of 45 nm or more in the semiconductor design rule, it is necessary to use a high NA (Hyper-NA) exposure method having a numerical aperture of NA> 1, for example, immersion exposure.
In immersion exposure, the refractive index is 1 by filling the space between the wafer and the lowermost lens of the exposure apparatus with a liquid.
Compared with air, the exposure method can improve the resolution because the NA can be increased by the refractive index of the liquid. A numerical aperture (NA) is expressed by NA = n × sin θ. θ is the angle formed between the light beam entering the outermost lens of the lowermost lens of the exposure apparatus and the optical axis, and n is the refractive index of the medium between the wafer and the lowermost lens of the exposure apparatus.
However, the immersion exposure method having a numerical aperture NA> 1 is applied, and D in the semiconductor design rule is applied.
It has been found that there is a problem that the expected CD accuracy cannot be obtained when trying to form a fine pattern after RAM half pitch (hp) 45 nm (hereinafter referred to as hp45 nm).

The cause is the influence of the mask blank charge-up described below.
With the miniaturization of mask patterns, the requirements for mask processing accuracy have become stricter.
In particular, in the case of hp 45 nm and later, with further miniaturization of the mask pattern, requirements for mask processing accuracy become severe, and mask processing can be difficult. One factor responsible for mask processing accuracy is the resolution of the resist. The formation of a resist pattern in mask processing of hp 45 nm and later is performed by EB capable of high-precision drawing because the pattern becomes finer and complicated. In forming a resist pattern using EB drawing, there is a problem of charge-up (see Patent Document 1). This causes the resist underlayer to be charged up during EB writing of the resist, affecting the resolution of the resist. In EB drawing, it is necessary to devise measures such as reducing the surface resistance of blanks to prevent charge-up.
The general blank layer structure is a substrate / light-shielding film / resist, and the grounding from the blank set on the stage of the EB lithography machine is usually performed on the side surface or chamfered surface of the substrate (on either side). Whether to ground depends on the type of drawing device). The structure of the substrate end surface (referred to as the side surface and chamfered surface of the substrate, hereinafter the same) has a Cr film formed on the side surface of the substrate (see FIG. 1) in order to ground efficiently (see FIG. 1). The structure is obtained by removing the nearby resist (Patent Document 2).
On the other hand, the layer structure of the blank with an etching mask (also referred to as a hard mask) is, for example, a structure of substrate / halftone film / Cr film / etching mask film / resist. When the etching mask film covers the Cr film in the vicinity of the side surface or the chamfered surface of the substrate,
Since the surface resistance (sheet resistance) of the etching mask film is higher than the surface resistivity of the Cr film, E
At the time of B drawing, the surface of the etching mask film is charged up, which increases the influence on the resolution of the resist and hinders fine patterning. For this reason, since the processing controllability of the pattern is lowered, in an etching mask film used for a mask having a fine pattern such as an hp45 nm mask, in order to suppress charge-up due to EB drawing, in the stage of the EB drawing machine, Measures to ground efficiently from blanks are required.
In order to efficiently ground from the blanks on the stage of the EB lithography machine, the etching mask film is not formed on the grounding area (side surface or chamfered surface), that is, the end surface portion (side surface or side surface) of the substrate. It is to increase the exposed area of the Cr film without forming the film on the chamfered surface.

However, for example, in the case where the shielding plate described in FIG. 2 of Patent Document 3 is used, in order not to form a film on the substrate end surface (side surface or chamfered surface), shielding is performed in order to avoid wraparound of the film forming material. It is necessary to cover the main surface to some extent with a plate, so that the film forming range of the etching mask film is narrowed. Further, since there is a range where the etching mask film is not formed on the peripheral portion of the main surface, another problem that a pattern cannot be formed in a portion without the etching mask film occurs. Specifically, as shown in FIG. 2, there is an alignment mark 5 used when a mask is mounted on a wafer exposure machine (stepper) near the periphery of the main surface of the substrate 1, and the periphery of the main surface of the substrate. If the etching mask film 3 is not formed in the vicinity, the alignment mark formed by the light-shielding film 2 is chipped. If the alignment mark pattern is notably chipped, the mask cannot be mounted on the exposure machine. In order to prevent the alignment mark from being chipped, it is necessary to further widen the film forming range of the etching mask film. However, in the case of using the shielding plate shown in FIG. In the case where the film forming range of the etching mask film is to be expanded in consideration of the position, there is a problem that the etching mask film is formed near the end face of the substrate.
JP-A-8-137089 JP 2006-184353 A JP 2002-90977 A

The present invention has been made in view of the above problems, and an object of the present invention is to form an etching mask film without forming an etching mask film on the end surface of the substrate so as not to cause charge-up, and to prevent chipping of alignment marks. An object of the present invention is to provide a mask blank manufacturing method and a mask blank capable of expanding the film forming range.

The present invention has the following configuration.
(Structure 1) An electron beam drawing mask blank for forming a resist pattern by electron beam drawing, comprising: a light shielding film on a transparent substrate; and an etching made of an inorganic material having resistance to etching of the light shielding film. A mask blank manufacturing method in which a mask film is formed in this order,
In the method of manufacturing a mask blank, the etching mask film is shielded by a shielding plate so as not to be formed on at least a side surface of the substrate.

According to the first aspect of the invention, when the etching mask film is formed, the etching mask film is present on at least the side surface of the substrate by shielding the film with the shielding plate so that it is not formed on at least the side surface of the substrate. A mask blank is obtained. In this mask blank, by exposing the light shielding film on the side surface of the substrate, it is possible to efficiently perform grounding on the side surface of the substrate during EB writing, and it is possible to prevent blanks from being charged up and resist resolution. The effect on sex can be reduced.

(Structure 4) A mask blank for electron beam drawing in which a resist pattern is formed by electron beam drawing. The mask blank is a transparent substrate on a transparent substrate and an inorganic system having resistance to etching of the light shielding film. There is a mask blank in which an etching mask film made of a material is formed in this order,
The light-shielding film is a mask blank characterized in that it is made of a conductive material that does not charge up when drawing and patterning with an electron beam, and the etching mask film does not exist on at least the side surface of the substrate.
According to the mask blank according to the above configuration 4, a mask blank having no etching mask film on at least the side surface of the substrate is obtained. In this mask blank, the light shielding film is exposed on the side surface of the substrate, so that at the time of EB drawing, Grounding can be performed efficiently on the side surface of the substrate, it is possible to prevent blanks from being charged up, and the influence on the resolution of the resist can be reduced.

(Structure 2) The etching mask film is formed on the inner side of at least the side surface of the substrate and on the outer side of the alignment mark so that the alignment mark is not chipped. is there.
According to this configuration, in addition to the operational effects described in the above configuration 1 or 4, the film formation range of the etching mask film can be expanded without forming the etching mask film on the substrate end surface (side surface or chamfered surface). Can do. For this reason, in addition to being able to prevent the etching mask film from being charged up, the film formation range can be widened, so that the alignment mark can be reliably formed.

In the present invention, when the place where the blanks is grounded on the stage of the EB drawing machine is a chamfered surface of the substrate, a line B ′ on the inner side of a certain distance parallel to the outermost side B of the main surface of the substrate 1. It is preferable to extend the film formation range of the etching mask film to the position (see FIG. 1). The certain distance between BB ′ is preferably within 2 mm in order to reliably form the alignment mark.
In the present invention, when the place where the blanks is grounded on the stage of the EB drawing machine is the side surface of the substrate, the etching mask film extends to the position of the line A ′ on the inner side of the substrate 1 a certain distance in parallel with the side surface A of the substrate 1 The film-forming range can be expanded (see FIG. 1). The certain distance between AA ′ is preferably within 1 mm in order to reliably form the alignment mark.
In the present invention, the film forming range of the etching mask film is most preferably the outermost side B (the end B of the main surface, the main surface and the chamfered surface) of the main surface of the substrate 1 as shown in FIG. Intersection line B)
It is preferable to extend to. According to this aspect, the alignment mark can be formed more reliably than in the case where the film forming range is narrower than this aspect, which is preferable. Also according to this aspect,
Since the etching mask film is not formed on the side surface and chamfered surface of the substrate, the grounding can be performed on either the side surface or the chamfered surface of the substrate. An applicable mask can be provided.

(Structure 3) The said shielding board is formed with an elastic material, and contacts or adjoins the said board | substrate, It is characterized by the above-mentioned.
If comprised in this way, the film-forming range of an etching mask film | membrane can be expanded, without forming an etching mask film | membrane on a board | substrate end surface (a side surface or chamfering surface of a board | substrate).
In the present invention, as the elastic material, a fluororesin (for example, Teflon (registered trademark)) or the like can be suitably used in addition to the rubber material.
In the present invention, as a form of the shielding plate, for example, a sheet (plate-like body) made of a rubber material having the same opening as the area of the main surface is pressed against the substrate and brought into contact or in close contact with the shielding. The opening of the shielding plate can be enlarged / reduced or deformed. Further, it is possible to shield the substrate by bringing the shielding plate close to the substrate with a slight gap.
In the present invention, the shielding plate is, for example, a side surface and a chamfered surface of the substrate over the outer periphery of the substrate,
And close to each other with a slight gap to shield these portions, and the main surface may not be shielded up to its end B (see FIG. 3).

(Configuration 5) On the etching mask film in the mask blank according to the present invention described above, a step of forming a resist layer for electron beam drawing;
The electron beam drawing resist layer is subjected to electron beam drawing and developed to form a resist pattern;
Etching the etching mask film using the resist pattern as a mask, transferring the resist pattern to the etching mask film, and forming a pattern of the etching mask film;
Etching the light shielding film using the resist pattern and the etching mask film pattern as a mask, or using the etching mask film pattern as a mask,
Transferring the pattern to the light shielding film to form a pattern of the light shielding film;
It is a manufacturing method of the transfer mask characterized by having.
According to the invention according to Configuration 5, since the mask blank in which the etching mask film does not exist on the side surface or the chamfered surface of the substrate, that is, the mask blank in which the light shielding film is exposed on the side surface or the chamfered surface of the substrate is used, In this case, the grounding can be efficiently performed on the side surface or chamfered surface of the substrate, it is possible to prevent blanks from being charged up, and the influence on the resolution of the resist can be reduced.

According to the present invention, the etching mask film is shielded so as not to be formed on the side surface or the chamfered surface of the substrate, so that the light shielding film is exposed, whereby the grounding can be efficiently performed at the time of EB drawing. Blanks can be prevented from being charged up, and the influence on the resolution of the resist can be reduced. In addition, the film forming range of the etching mask film can be expanded without forming the etching mask film on the end face of the substrate. For this reason,
In addition to being able to prevent the etching mask film from being charged up, the film formation range can be widened, so that the alignment mark can be reliably formed.

Hereinafter, embodiments according to the present invention will be described with reference to the drawings.
FIG. 1 shows an example of a mask blank according to the first embodiment of the present invention. In this example,
The mask blank is a binary mask blank, and includes a transparent substrate 1, a light shielding film 2, an etching mask film 3, and a resist film 4 in this order.

As the light-shielding film 2, a metal film containing a metal can be used. As the metal film containing a metal, chromium, tantalum, molybdenum, titanium, hafnium, tungsten, an alloy containing these elements, or a material containing the above elements or the above alloys (for example, in addition to the above materials containing the above elements or the above alloys) Film containing at least one of oxygen, nitrogen, silicon, and carbon).
As the light-shielding film 2, for example, a material such as chromium alone or a material containing at least one element composed of oxygen, nitrogen, carbon, and hydrogen in chromium (a material containing Cr) can be used. As the film structure of the light-shielding film, a single-layer or multi-layer structure made of the above film materials can be used. Further, in different compositions, a multi-layer structure formed in stages or a film structure in which the composition is continuously changed can be obtained.
Specifically, the light-shielding film 2 includes a light-shielding layer made of a chromium nitride film (CrN film) and a chromium carbonitride film (CrCN film), and an anti-reflection made of a film containing chromium and oxygen (CrON film). It is a laminated film with layers. The chromium nitride film is a layer mainly composed of chromium nitride (CrN), and has a thickness of 10 to 20 nm, for example. Chromium carbonitride film is made of chromium carbonitride (
CrCN) as a main component and has a film thickness of, for example, 25 to 60 nm. A film (CrON film) in which oxygen and nitrogen are contained in chromium has a film thickness of 15 to 30 nm, for example.

In the present invention, the light-shielding film 2 is preferably a material having conductivity that does not charge up when drawing and patterning an electron beam.
In the present invention, the light-shielding film 2 is formed from the main surface of the substrate to the side surface of the substrate, as shown in FIG.
Or it forms over the chamfering surface of a board | substrate.

As the etching mask film 3, for example, a silicon-containing film containing silicon can be used. Examples of the silicon-containing film include a silicon film, a metal silicide film containing silicon and chromium, tantalum, molybdenum, titanium, hafnium, and tungsten metal. The film | membrane containing is mentioned. Etching mask film 3
For example, a film mainly composed of transition metal silicide oxide, transition metal silicide nitride, transition metal silicide oxynitride, transition metal silicide oxycarbide, transition metal silicide oxynitride, or transition metal silicide oxynitride carbide is used. be able to. As the etching mask film 3, for example, molybdenum-based (MoSiON, MoSiN, MoSiO, etc.)
, Tungsten (WSiON, WSiN, WSiO, etc.), silicon (SiN, SiO
N, etc.) and chromium-based (CrO, CrF, etc.) films can be used. For example, the etching mask film 3 is preferably made of MoSiN or SiON.

In the present invention, the film formation range of the etching mask film 3 is most preferably as shown in FIG. 1, the outermost side B of the main surface of the substrate 1 (the end B of the main surface, the main surface and the chamfered surface). Intersection line B
) Is preferable.

In the present invention, the mask blank includes a photomask blank, a phase shift mask blank, a reflective mask blank, and an imprint transfer plate substrate. The mask blank includes a mask blank with a resist film and a mask blank before forming a resist film. The phase shift mask blank includes a case where a light-shielding film such as a chromium-based material is formed on the halftone film. In the case of a reflective mask blank, a structure in which an absorber film of a tantalum material or a chromium material to be a transfer pattern is formed on a multilayer reflective film or a buffer layer provided on the multilayer reflective film, The imprint transfer plate includes a structure in which a transfer pattern forming thin film such as a chromium-based material is formed on a base material to be a transfer plate.
In the present invention, the mask blank is a mask in which a transfer pattern forming thin film and an etching mask film made of an inorganic material having resistance to etching of the transfer pattern forming thin film are formed in this order on a transparent substrate. Contains blanks. In this case, the transfer pattern forming thin film is made of a material having conductivity that does not charge up when the electron beam is drawn and patterned. The contents described above can be applied by replacing “light-shielding film” with “transfer pattern forming thin film”.
In the present invention, the mask includes a photomask, a phase shift mask, a reflective mask, and an imprint transfer plate. The mask includes a reticle. The phase shift mask includes a case where the phase shifter is formed by engraving the substrate.

In the present invention, examples of the substrate include a synthetic quartz substrate, a soda lime glass substrate, an alkali-free glass substrate, and a low thermal expansion glass substrate.

In the present invention, it is preferable to use a dry etching gas composed of a chlorine-based gas or a mixed gas containing a chlorine-based gas and an oxygen gas for the dry etching of the chromium-based thin film.
The reason for this is that for a chromium-based thin film made of a material containing chromium and an element such as oxygen and nitrogen, the dry etching rate can be increased by performing dry etching using the above dry etching gas, This is because the dry etching time can be shortened and a light-shielding film pattern having a good cross-sectional shape can be formed. The chlorine-based gas used for dry etching gas, for _{example, Cl 2, SiCl 4, HCl} , CCl 4, CH
CI ₃ etc. are mentioned.

In the present invention, for dry etching of a silicon-containing film containing silicon or a metal silicide-based thin film, for example, fluorine-based gas such as SF ₆ , CF ₄ , C ₂ F ₆ , CHF ₃ , and these, He,
Mixed gas such as H ₂ , N ₂ , Ar, C ₂ H ₄ , O ₂ , or chlorine-based gas such as Cl ₂ , CH ₂ Cl ₂ , and these, and He, H ₂ , N ₂ , Ar, C ₂ A mixed gas such as H ₄ can be used.

In the present invention, as the phase shift film, for example, a silicon-containing film containing silicon can be used. Examples of the silicon-containing film include a silicon film, a metal silicide film containing silicon and chromium, tantalum, molybdenum, titanium, hafnium, and tungsten metal. The film | membrane containing is mentioned. As the phase shift film, for example, transition metal silicide oxide, transition metal silicide nitride, transition metal silicide oxynitride, transition metal silicide oxycarbide, transition metal silicide oxycarbide, or transition metal silicide oxynitride carbide is used as a main component. A membrane can be used. Examples of the phase shift film 5 include molybdenum-based (MoSiON, MoSiN, MoSiO, etc.), tungsten-based (WSiON, WSiN, WSiO, etc.), and silicon-based (SiN, SiON, etc.).
Further, a halftone film such as chromium (CrO, CrF, etc.) can be used.
As the phase shift film, for example, a halftone film composed of two layers of a phase adjustment layer that mainly controls the phase of exposure light and a transmittance adjustment layer that mainly has a function of controlling the transmittance of exposure light. Can be used

Examples of the present invention and comparative examples are shown below.
(Example 1 and Comparative Examples 1 and 2)
(Manufacture of mask blank)
A photomask manufacturing method according to a first embodiment of the present invention will be described with reference to FIG.
First, a substrate made of quartz was mirror-polished and subjected to predetermined cleaning to obtain a translucent substrate 1 of 6 inches × 6 inches × 0.25 inches.
Next, a light-shielding chromium film 2 made of a CrN film, a CrC film, and a CrON film is used using an in-line sputtering apparatus in which a plurality of chromium (Cr) targets are arranged in the same chamber on the translucent substrate 1. Was deposited. Specifically, first, argon (Ar) and nitrogen (N ₂ )
A CrN film having a thickness of 15 [nm] was formed by reactive sputtering in a mixed gas atmosphere (Ar: N ₂ = 72: 28 [volume%], pressure 0.3 [Pa]). . Subsequently, a mixed gas atmosphere of argon (Ar) and methane (CH ₄ ) (Ar: CH ₄ = 96.5: 3
. 5 [volume%] and pressure 0.3 [Pa]) by performing reactive sputtering,
A CrC film having a thickness of 20 nm was formed on the CrN film. Subsequently, reactive sputtering is performed in a mixed gas atmosphere of argon (Ar) and nitric oxide (NO) (Ar: NO = 87.5: 12.5 [volume%], pressure 0.3 [Pa]). As a result, a CrON film having a thickness of 20 [nm] was formed on the CrC film. The above CrN film, CrC film, and CrON film are continuously formed using an in-line sputtering apparatus, and these CrN, C
The light-shielding chromium film 2 containing rC and CrON is configured such that the components continuously change in the thickness direction.
Next, using a mixed target of molybdenum (Mo) and silicon (Si) (Mo: Si = 1: 9 [atomic%]) on the light-shielding chromium film 2, argon (Ar) and nitrogen (N ₂ ) In a mixed gas atmosphere (Ar: N ₂ = 10: 90 [volume%], pressure 0.3 [Pa]), reactive sputtering is performed to form a MoSiN-based inorganic system with a film thickness of 20 [nm]. An etching mask film 3 was formed.
At this time, in Example 1, a sheet (plate-like body) made of a silicon rubber material having the same opening as the main surface area is pressed against and adhered to the substrate to shield the side surface and the chamfered surface of the substrate. Then, an etching mask film 3 was formed. As a result, the film formation range of the etching mask film 3 could be expanded to the outermost side B of the main surface of the substrate 1 as shown in FIG.
In the comparative example, the etching mask film 3 was formed using the shielding plate shown in FIG. However, when an attempt was made to expand the film formation range of the etching mask film in consideration of the position of the alignment mark on the mask, the etching mask film was formed on the side surface or chamfered surface of the substrate (Comparative Example 1). ). When the etching mask film is not formed on the side surface or the chamfered surface of the substrate, the film forming range of the etching mask film is narrow (
For example, the inner side of B ′) (Comparative Example 2).
Next, a chemical amplification type positive resist 4 for electron beam drawing (exposure) 4 (FEP171: manufactured by Fuji Film Electronics Materials Co., Ltd.) is formed on the inorganic etching mask film 3 by a spin coating method to a film thickness of 200 nm. It applied so that it might become (refer to Drawing 2 (d)).
As described above, the light-shielding chromium film 2 made of Cr-based material and the MoSiN on the light-transmitting substrate 1.
A mask blank in which an inorganic etching mask film 3 made of a base material and a resist 4 were sequentially formed was prepared.
The sheet resistance of the sample at the stage where the light-shielding chromium film 2 was formed was 120Ω / □.
Further, when the sheet resistance of the sample at the stage where the etching mask film 3 was formed was measured, it was 170Ω / □.

(Manufacture of mask)
Next, an electron beam was drawn on the resist 4 with JBX9000 manufactured by JEOL Ltd. and developed to form a resist pattern. At this time, in Example 1 and Comparative Examples 1 and 2,
On the stage of the EB drawing machine, grounding was performed from the side surface or chamfered surface of the blank.
Next, using the resist pattern as a mask, the inorganic etching mask film 3 is made of SF ₆
Using a mixed gas of He and He, ionic main dry etching was performed under a pressure of 5 [mmTorr] to form an inorganic etching mask pattern.
Next, after removing the resist pattern, only the inorganic etching mask pattern is used as a mask, and the light-shielding chromium film 2 is mixed with Cl ₂ and O ₂ at a pressure of 3 mmTorr.
Under these conditions, radical etching was carried out mainly by radical etching that increased ionicity as much as possible (= the ionicity was increased to the extent that ions and radicals were almost equivalent) to form a light-shielding chromium pattern.
Next, the inorganic etching mask pattern was peeled off, and predetermined cleaning was performed to obtain a photomask 10.

(Evaluation)
The mask obtained above was evaluated.
As a result, in the mask according to Example 1, no charge-up was observed in the mask manufacturing process, and no decrease in CD accuracy considered to be caused by the charge-up was observed. As a result, it was confirmed that a fine pattern found in the hp45 nm mask can be processed with high accuracy. Further, the alignment mark (see FIG. 2) was not lost, and the alignment mark could be formed reliably.
In the mask according to Comparative Example 1, charge-up was recognized in the mask manufacturing process, and a decrease in CD accuracy considered to be caused by charge-up was recognized.
In the mask according to Comparative Example 2, the alignment mark (see FIG. 2) was missing, which hindered alignment.

(Example 2)
Example 1 was the same as Example 1 except that SiON was formed instead of MoSiN as the inorganic etching mask film 3 in Example 1.
The result of similar evaluation was the same as in Example 1.

As mentioned above, although this invention was demonstrated using embodiment, the technical scope of this invention is not limited to the range as described in the said embodiment. It will be apparent to those skilled in the art that various modifications or improvements can be added to the above-described embodiment. It is apparent from the description of the scope of claims that embodiments with such changes or improvements can be included in the technical scope of the present invention.

It is a partial section showing an example of a mask blank concerning the present invention. It is a fragmentary top view for demonstrating the problem of the missing of an alignment mark. It is a partial cross section for demonstrating one aspect | mode to the shielding board which concerns on this invention.

1 Substrate 2 Light-shielding film 3 Etching mask film 4 Resist film 5 Alignment mark

Claims (15)

An electron beam mask blank for electron beam drawing forming a resist pattern by the drawing, the inorganic the mask blank, having on a substrate, a thin film transfer pattern formation, resistance to etching of said thin film for transfer pattern formation An etching mask film made of a system material and a mask blank formed in this order,
The transfer pattern forming thin film is made of a material having conductivity so as not to be charged up when an electron beam is drawn and patterned, and is formed from the main surface of the substrate to a side surface or a chamfered surface of the substrate,
The mask blank is characterized in that the etching mask film does not exist on at least the side surface of the substrate, and is formed so that the transfer pattern forming thin film is exposed. 2. The mask according to claim 1, wherein the mask blank is a reflective mask blank in which the transfer pattern forming thin film is formed on a multilayer reflective film or a buffer layer provided on the multilayer reflective film. blank. 3. The mask blank according to claim 1, wherein the transfer pattern forming thin film is an absorber film made of a tantalum material or a chromium material. The mask blank according to claim 1, wherein a sheet resistance of the etching mask film is higher than a sheet resistance of the transfer pattern forming thin film . 5. The mask blank according to claim 1, wherein the transfer pattern forming thin film is exposed so as to be grounded on a side surface or a chamfered surface of the substrate during electron beam drawing.   The etching mask film is a silicon film, a metal silicide film containing silicon and a metal of chromium, tantalum, molybdenum, titanium, hafnium, or tungsten, or the silicon film or the metal silicide film with oxygen, nitrogen, or carbon. The mask blank according to any one of claims 1 to 5, wherein the mask blank is a film containing at least one.   The mask blank according to any one of claims 1 to 6, wherein the mask blank is a mask blank with a resist film. A mask blank for electron beam drawing for forming a resist pattern by electron beam drawing, comprising a transfer pattern forming thin film on a substrate and an inorganic material having resistance to etching of the transfer pattern forming thin film A method for manufacturing a mask blank in which an etching mask film is formed in this order,
The transfer pattern forming thin film is formed from the main surface of the substrate to the side surface or chamfered surface of the substrate,
When forming the etching mask film, the mask blank manufacturing method is characterized in that the etching mask film is not formed on at least a side surface of the substrate but is shielded by a shielding plate so that the transfer pattern forming thin film is exposed. . 9. The mask according to claim 8, wherein the mask blank is a reflective mask blank in which the transfer pattern forming thin film is formed on a multilayer reflective film or a buffer layer provided on the multilayer reflective film. blank. 10. The mask blank according to claim 8, wherein the transfer pattern forming thin film is an absorber film made of a tantalum material or a chromium material. The film formation range of the etching mask film is inside at least the side surface of the substrate, and when the transfer mask is used, the alignment mask formed on the transfer pattern forming thin film using the etching mask film is missing. The method of manufacturing a mask blank according to claim 8, wherein the film is formed up to the outside of the alignment mark so as not to cause a defect.   The method of manufacturing a mask blank according to claim 8, wherein the shielding plate is made of an elastic material and shields the substrate by contacting or approaching the substrate. The transfer pattern forming thin film is made of a material having conductivity so as not to be charged up when drawing and patterning an electron beam,
The method of manufacturing a mask blank according to any one of claims 8 to 12, wherein a sheet resistance of the etching mask film is higher than a sheet resistance of the transfer pattern forming thin film . 14. The method of manufacturing a mask blank according to claim 8, wherein the electron beam drawing is grounded on a side surface or a chamfered surface of the substrate where the transfer pattern forming thin film is exposed. Forming a resist layer for electron beam drawing on the etching mask film in the mask blank according to claim 1;
The electron beam drawing resist layer is subjected to electron beam drawing and developed to form a resist pattern;
Etching the etching mask film using the resist pattern as a mask, transferring the resist pattern to the etching mask film, and forming a pattern of the etching mask film;
Using the resist pattern and the etching mask film pattern as a mask, or using the etching mask film pattern as a mask, the transfer pattern forming thin film is etched, and the pattern is transferred to the transfer pattern forming thin film. , Forming a pattern of the transfer pattern forming thin film;
A method for producing a transfer mask, comprising:

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