JP2012214851A - Vacuum evaporator - Google Patents

Abstract

The present invention provides a metallized film having excellent characteristics by controlling the ratio of each metal component in a metal vapor deposition electrode on a dielectric film.
A vacuum deposition apparatus includes a deposition chamber 8 having an upper opening, a plurality of evaporation sources 16 provided in the deposition chamber for generating metal vapor by heating a metal material, and a plurality of evaporation sources in the deposition chamber. A partition wall 18 for partitioning each other is provided, and the partition wall includes a plate-like base portion 24 that is movable in the horizontal direction and a partition plate 25 that is provided above the base portion and that is movable in the vertical direction. With this configuration, the area of the opening from which each metal vapor is released can be freely changed, and the amount by which the metal vapor from each evaporation source overlaps can be controlled. As a result, the vapor deposition amount of metal vapor and its state can be controlled, and the ratio and distribution state of each metal component in the metal vapor deposition electrode can be controlled. And the metallized film which has the outstanding characteristic can be produced.
[Selection] Figure 2

Description

  The present invention relates to a vacuum deposition apparatus used for manufacturing a metallized film such as a metallized film capacitor and performing vapor deposition on a substrate by heating and evaporating a metal material.

  In recent years, from the viewpoint of environmental protection, all electric devices are controlled by inverter circuits, and energy saving and high efficiency are being promoted. In particular, in the automobile industry, hybrid vehicles (hereinafter referred to as HEVs) that run on electric motors and engines have been introduced into the market, and the development of technologies relating to energy saving and high efficiency has been activated, which is friendly to the global environment.

  Since such an electric motor for HEV has a high operating voltage range of several hundred volts, a metalized film capacitor having high withstand voltage and low loss electric characteristics has attracted attention as a capacitor used in connection with the electric motor. In addition, the trend of adopting metalized film capacitors with a very long life is conspicuous due to the demand for maintenance-free in the market.

  Such metallized film capacitors are roughly classified into those using a metal foil as an electrode and those using a deposited metal provided on a dielectric film as an electrode. Among these, metallized film capacitors that use vapor-deposited metal as an electrode (hereinafter referred to as metal vapor-deposited electrode) have a smaller volume occupied by the electrode compared to that of metal foil and can be reduced in size and weight. High reliability in dielectric breakdown due to the recovery function (function in which when a short-circuit occurs in an insulation defect, the metal deposition electrode around the defect evaporates and scatters and insulates by the short-circuit energy to insulate the capacitor) Therefore, it has been widely used conventionally.

  In order to improve various characteristics of the metallized film capacitor as a capacitor, a metal vapor deposition electrode is formed using a plurality of types of metals having different types and physical properties, and the advantages of each metal may be utilized to the maximum.

  Patent Document 1 discloses an apparatus for forming a metal vapor deposition electrode using a plurality of types of metals having different types and physical properties.

  A vacuum deposition apparatus 100 described in Patent Document 1 will be described with reference to FIG.

  As shown in FIG. 5, the vacuum vapor deposition apparatus 100 described in Patent Document 1 has a boat 102 disposed below a polyethylene naphthalate 101 to be vapor deposited, and supplies different metal materials 103 and 104 to the boat 102. Yes. Specifically, in Patent Document 1, aluminum and copper are used as the metal materials 103 and 104, respectively. Then, the metal materials 103 and 104 supplied to the boat 102 are heated to generate metal vapor, and the generated metal vapor is blown in the direction of polyethylene naphthalate 101, so that the metal materials 103 and 104 that have become fine particles are made into polyethylene naphthalate. Vapor deposition is performed by adhering to the surface of phthalate 101.

  That is, in the technique described in Patent Document 1, the metal material 103 is formed by attaching the metal vapor generated from the plurality of metal materials 103 and 104 to the surface of the polyethylene naphthalate 101 in the single vacuum deposition apparatus 100 as described above. , 104 makes it possible to form a metal vapor deposition electrode taking advantage of the advantages of 104.

JP 60-1823 A

  Certainly, according to the configuration of the vacuum deposition apparatus 100 described in Patent Document 1, it is possible to form a metal deposition electrode composed of a plurality of types of metals on the polyethylene naphthalate 101.

  However, in the configuration of the vacuum vapor deposition apparatus 100 described in Patent Document 1, it is difficult to control the ratio of each metal component in the formed metal vapor deposition electrode, that is, the composition.

  That is, in order to further utilize the advantages of the metal materials 103 and 104, it is necessary to optimize the ratio and further distribution state of each metal component contained in the metal vapor deposition electrode. In the configuration of 100, the behavior of the metal vapor generated from the metal materials 103 and 104 cannot be controlled, so that realization is difficult.

  In other words, in metal vapor deposition electrodes composed of multiple types of metals, it is very important to control the metal vapor in order to make the best use of the advantages of each metal. It has not been configured to enable this easily.

  Accordingly, an object of the present invention is to solve such problems and to provide a vacuum evaporation apparatus capable of easily producing a metallized film having excellent characteristics.

  In order to solve this problem, the vacuum vapor deposition apparatus of the present invention is a vacuum vapor deposition apparatus that deposits metal fine particles on the surface of the base material while conveying the base material at a predetermined speed. And a plurality of evaporation sources which are provided in the evaporation chamber and which are provided in the evaporation chamber and generate a metal vapor by heating a metal material, and partition the plurality of evaporation sources in the evaporation chamber. A partition wall is provided, and the partition wall includes a plate-like base portion that is movable in the horizontal direction in the vapor deposition chamber, and a partition plate that is provided on the base portion and is movable in the vertical direction.

  The vacuum vapor deposition apparatus of the configuration of the present invention can control the ratio and distribution state of each metal component in the metal vapor deposition electrode, and can produce a metallized film having excellent characteristics.

  This is because the partition wall that partitions the evaporation sources is composed of a plate-like base portion that is movable in the horizontal direction and a partition plate that is movable in the vertical direction.

  That is, the amount of evaporation from the respective evaporation sources to the base material depends to some extent on the area of the upper opening of each evaporation space formed in the evaporation chamber by partitioning with a partition wall. The device has a plate-shaped base that can be moved to freely change the area of the upper opening of each evaporation space, and as a result, the amount of evaporation from each evaporation source can be controlled. It has become.

  In addition, in order to form a layer in which a plurality of metal materials are mixed on the metal vapor deposition electrode, and to control the thickness of this layer, the metal vapor from the respective evaporation sources must be overlapped and the amount of overlap must be controlled. I must. Therefore, the partition plate of the vacuum vapor deposition apparatus of the present invention is configured to be movable in the vertical direction so that the amount of overlap of the respective metal vapors can be controlled.

  From these, in the vacuum deposition apparatus of the present invention, the ratio and distribution state of each metal component in the metal deposition electrode can be controlled, and a metallized film having excellent characteristics can be produced. .

The schematic front view which showed the structure of the vacuum evaporation system of Example 1. The perspective view which shows the structure in the vapor deposition chamber of Example 1. (A) (b) (c) The figure which shows the mode of various vapor deposition of the vacuum evaporation system of Example 1. FIG. The perspective view which shows the structure in the vapor deposition chamber of Example 2. Schematic diagram showing the configuration of a conventional vacuum evaporation system

Example 1
First, the whole structure and operation | movement of the vacuum evaporation system 1 of a present Example are demonstrated using FIG. FIG. 1 is a schematic front view showing the configuration of the vacuum vapor deposition apparatus 1.

  The vacuum chamber 2 is a main body of the vacuum vapor deposition apparatus 1, and the vacuum chamber 2 is evacuated by a vacuum pump (not shown), and the inside is in a vacuum state.

  In this vacuum chamber 2, vapor deposition is performed on the dielectric film 3 serving as a target substrate. In this embodiment, a polypropylene film having a width of 650 mm and a thickness of 3 μm is used as the dielectric film. However, the dielectric film 3 to be a target is not limited to this mode, and other widths, thicknesses, and materials may be used.

  The dielectric film 3 is unwound by rotating the raw roll 4 in a predetermined direction (the direction of the arrow in FIG. 1). The unwound dielectric film 3 is continuously conveyed at a predetermined speed, and its traveling direction is changed by the rotating roller 5 to reach the main can 6.

  The main can 6 circulates a refrigerant of −15 ° C. to 0 ° C. with antifreeze added therein, and the dielectric film 3 that has reached the main can 6 is conveyed in the direction of the arrow along the surface of the main can 6 while being cooled. Is done.

  First, the dielectric film 3 reaches the pattern roll 7 where oil is transferred to a predetermined portion of the dielectric film 3.

  A vapor deposition chamber 8 is disposed below the main can 6. In the vapor deposition chamber 8, vapor deposition of a metal vapor deposition material onto the dielectric film 3 is performed. In this embodiment, two types of wire rods 9 and 10 are supplied from the wire rod supply rolls 11 and 12 to the boat 13 in the vapor deposition chamber 8. Examples of the material for the wires 9 and 10, that is, the metal material to be deposited on the dielectric film 3 include aluminum, magnesium, nickel, titanium, zinc, manganese, copper, silicon, and an alloy combining these.

  The boat 13 is electrically connected to the two electrodes 14 and 15, and when the electrodes 14 and 15 are energized, the boat 13 made of a resistor generates heat and heats the wires 9 and 10. Yes. Here, in this specification, the positions where the wire rods 9 and 10 come into contact with the boat 13 and the metal vapor is generated are defined as evaporation sources 16 and 17, respectively.

  Then, when the wires 9 and 10 are melted and vaporized by the evaporation sources 16 and 17 in the boat 13, the respective metal vapors generated from the wires 9 and 10 rise in the direction of the dielectric film 3, and the surface of the dielectric film 3. Adhere to. However, the metal fine particles in the metal vapor do not adhere to the portion where the oil is transferred by the pattern roll 7 described above. This non-deposited portion becomes an insulating margin portion and a slit portion between the divided electrodes in the dielectric film 3 after the deposition is completed.

  Note that a partition wall 18 serving as a point of the present invention is provided inside the vapor deposition chamber 8, and the evaporation sources 16 and 17 in the boat 13 are partitioned by the partition wall 18. The configuration of the partition wall 18 and the inside of the vapor deposition chamber 8 will be described in detail later with reference to FIG.

  Although not shown, a shutter is provided between the vapor deposition chamber 8 and the main can 6. This shutter is for controlling the timing of vapor deposition.

  And the dielectric film 3 which vapor-deposited changes a conveyance direction with the rotating roller 19, and is finally wound up by rotating the winding roll 20 in the arrow direction, and a metallized film is completed.

  As shown in FIG. 1, an adhesion preventing plate 21 made of metal that does not react with metal vapor is provided in the vacuum chamber 2. In the present embodiment, as a metal for forming the adhesion preventing plate 21, Stainless Used Steel (hereinafter referred to as SUS) is used. Alternatively, the adhesion preventing plate 21 may be formed using iron other than SUS. The adhesion prevention plate 21 prevents the metal vapor generated in the vapor deposition chamber 8 from being scattered in a direction other than the intended direction, for example, adhering to a metallized film as a finished product or the inner wall of the vacuum chamber 2.

  Next, the configuration in the vapor deposition chamber 8 will be described with reference to FIG. FIG. 2 is a see-through perspective view showing the configuration inside the vapor deposition chamber 8, and shows the two wall surfaces on the near side of the vapor deposition chamber 8 in perspective (illustrated by dotted lines). In FIG. 2, the two electrodes 14 and 15 connected to the boat 13 and the wires 9 and 10 supplied to the boat 13 are not shown in order to clearly show the configuration in the vapor deposition chamber 8.

  As shown in FIG. 2, the vapor deposition chamber 8 has a box shape with an upper portion opened. Actually, as described above, a shutter (not shown) is provided above the vapor deposition chamber 8 to control the timing of vapor deposition.

  Wire material supply holes 22 and 23 are provided in the center of the side wall in the longitudinal direction of the vapor deposition chamber 8, and the wires 9 and 10 are provided from the outside to the center of the bottom surface of the vapor deposition chamber 8 through the wire material supply holes 22 and 23 during vapor deposition. The supplied rectangular boat 13 is supplied. Then, the respective wire rods 9 and 10 come into contact with the boat 13, and metal vapor is generated from the evaporation sources 16 and 17 (only the evaporation source 16 is shown in FIG. 2) which is the contact position.

  A partition wall 18 is disposed in the deposition chamber 8, and the deposition chamber 8 is partitioned into two spaces by the partition wall 18. The partition wall 18 includes a plate-like base portion 24 formed of SUS and a partition plate 25 formed of SUS and fixed to the upper portion of the base portion 24 in the same manner as the base portion 24. In addition, you may form these bases 24 and the partition plate 25 with metals other than SUS, such as iron. The partition 18 is fixed in the vapor deposition chamber 8 by a locking portion 26 provided to protrude from the bottom side surface of the base 24. That is, the locking portion 26 is provided with a through hole (not shown). A screw 27 is inserted into the through hole, and screw fixing holes 28 provided near both ends in the short direction of the bottom surface of the vapor deposition chamber 8. It is fixed by screwing the screw 27 into the screw.

  Here, as shown in FIG. 2, a plurality of screw holes 28 are provided on the bottom surface of the vapor deposition chamber 8. Therefore, the base 24 can be fixed at an arbitrary position in the vapor deposition chamber 8 by changing the position of the screw retaining hole 28 into which the screw 27 is screwed. That is, the base 24 is configured to be movable in the horizontal direction in the vapor deposition chamber 8, and the size of two spaces in the vapor deposition chamber 8 separated by the partition wall 18 can be freely changed by changing the position of the base 24. Can be changed. In this embodiment, the locking portion 26 is provided near the bottom of the side surface of the base 24. However, the present invention is not limited to this, and may be provided near the center of the base 24 or near the top. When the locking portion 26 is provided in the vicinity of the center of the side surface or in the vicinity of the upper portion in this way, the screw retaining hole 28 is provided in the vicinity of the center of the side wall of the vapor deposition chamber 8 or in the vicinity of the upper portion.

  Further, as shown in FIG. 2, the partition plate 25 has three through grooves 29 penetrating to the back surface. The partition plate 25 is fixed to the base portion 24 by inserting the screw 30 into the through groove 29 and screwing it into a screw retaining hole (not shown) provided in the base portion 24 so that the partition plate 25 is crimped to the base portion 24. The Here, the through groove 29 is provided from the vicinity of the lower end of the partition plate 25 to the vicinity of the upper end, and the fixing position of the screw 30 can be freely changed in the vertical direction. Therefore, the partition plate 25 is configured to be movable in the vertical direction with respect to the base portion 24. The partition plate 25 can be completely removed and is detachable.

  Further, a notch 31 is provided in the center of the lower end portion of the base portion 24. The boat 13 is arranged over two spaces partitioned by the partition wall 18 in the vapor deposition chamber 8 through the notch 31. During vapor deposition, the wire rods 9 and 10 are respectively supplied to the front side and the rear side of the partition wall 18 of the boat 13 in FIG. 2, and the positions where the wire rods 9 and 10 and the boat 13 are in contact with each other as described above are the evaporation sources 16 and 17, respectively. It becomes. Thus, the evaporation sources 16 and 17 provided on the same boat 13 are in a state of being partitioned in the vapor deposition chamber 8 by the partition walls 18.

  As described above, the size of the two spaces in the vapor deposition chamber 8 delimited by the partition wall 18 can be freely changed.

  Next, the state at the time of vapor deposition of the vacuum vapor deposition apparatus 1 of a present Example is demonstrated using Fig.3 (a)-FIG.3 (c).

  FIG. 3A is a view showing a state of the vapor deposition chamber 8 in a state where the partition plate 25 is fixed at a position where the partition plate 25 is pulled up to the maximum. Here, spaces partitioned by the partition wall 18 on the left and right in FIG. 3A are referred to as a space A and a space B, respectively. An evaporation source 16 exists in the space A, and an evaporation source 17 exists in the space B.

  During vapor deposition, the wires 9 and 10 are heated by the evaporation source 16 and the evaporation source 17, respectively, and metal vapor is generated. In general, metal vapor scatters while diffusing from the evaporation surface in all directions. That is, the metal vapor generated from the evaporation source 16 and the evaporation source 17 scatters toward the upper dielectric film 3 as schematically shown by the broken line arrow a and the solid line arrow b while spreading over almost the entire space A and space B. To do. The scattered metal vapor contacts the dielectric film 3 and the metal fine particles adhere to the dielectric film 3, thereby forming a metal vapor deposition electrode on the dielectric film 3.

  Here, when the formed metal vapor deposition electrode is evaluated to temporarily reduce the amount of metal fine particles from the wire 9 contained in the metal vapor deposition electrode and conversely increase the amount of metal fine particles from the wire 10, FIG. As shown in (b), the partition wall 18 may be moved to the evaporation source 16 side.

  Thus, by moving the partition wall 18 and reducing the area of the upper opening of the space A, the amount of metal fine particles of the wire 9 attached to the dielectric film 3 can be reduced. On the other hand, the area of the upper opening of the space B increases, and the amount of metal fine particles of the wire 10 attached to the dielectric film 3 increases. As a result, the amount of metal fine particles of the wire 9 contained in the metal vapor deposition electrode can be reduced, and conversely, the amount of metal fine particles of the wire 10 can be increased, and a metal vapor deposition electrode having a desired composition is formed on the dielectric film 3. be able to.

  By the way, when vapor deposition is performed in the state shown in FIG. 3A and FIG. 3B described above, the space A and the space B are partitioned, so that the dielectric film 3 is viewed from the right in FIG. If it is conveyed to the left, the metal fine particles of the wire 9 first adhere to the dielectric film 3, and then the metal fine particles of the wire 10 adhere on the metal fine particles of the wire 9. Therefore, the metal vapor deposition electrode formed on the dielectric 3 tends to have a laminated structure in which the metal fine particle layer of the wire 9 and the metal fine particle layer of the wire 10 overlap each other. If it is desired to form a layer in which the metal of the wire 9 and the metal of the wire 10 are mixed instead of such a metal vapor deposition electrode, vapor deposition may be performed in the state as shown in FIG.

  That is, as shown in FIG. 3C, the position of the partition plate 25 may be changed downward. By adjusting the position of the partition plate 25 in this way, the space A and the space B communicate with each other in the vapor deposition chamber 8, and the metal vapor of the wire 9 and the metal vapor of the wire 10 are mixed in the upper part of the partition plate 25. Then, a metal vapor (shown by a dotted arrow c) in which the metal vapor of the wire 9 and the metal vapor of the wire 10 are uniformly overlapped is generated and deposited on the dielectric film 3. As a result, a layer in which the metal of the wire 9 and the metal of the wire 10 are newly mixed between the metal layer of the wire 9 and the metal layer of the wire 10 is formed on the dielectric film 3.

  Moreover, the position of the partition plate 25 can be freely changed, and the amount of the metal vapor of the wire rod 9 and the metal vapor of the wire rod 10 can be adjusted by appropriately changing the position. As a result, the thickness of the layer in which the metal of the wire 9 and the metal of the wire 10 are mixed can be adjusted. That is, when it is desired to increase the thickness of the layer in which the metal of the wire 9 and the metal of the wire 10 are mixed, the position of the partition plate 25 is adjusted relatively downward to enlarge the portion where the space A and the space B communicate with each other. Thus, the amount of mixed metal vapor increases, and the thickness of the layer in which the metal of the wire 9 and the metal of the wire 10 are mixed increases. On the other hand, when it is desired to reduce the thickness of the layer in which the metal of the wire 9 and the metal of the wire 10 are mixed, the position of the partition plate 25 may be adjusted relatively upward.

  Next, the effect of the vacuum evaporation apparatus 1 of a present Example is demonstrated.

  As described above, the vacuum vapor deposition apparatus 1 of the present embodiment can freely adjust the horizontal position of the base 24 of the partition wall 18 provided in the vapor deposition chamber 8 and the vertical position of the partition plate 25, The vapor deposition state of the metal vapor on the dielectric film 3 can be changed as appropriate. As a result, the control of the composition and distribution state of the metal vapor deposition electrode formed on the dielectric film 3 becomes relatively easy, and it becomes possible to easily produce a metallized film having excellent characteristics.

  Further, the partition wall 18 can be fixed only by screwing the locking portions 26 provided on the both end surfaces of the base portion 24 in the horizontal direction to the bottom surface of the vapor deposition chamber 8. Movement is very easy. Further, the vertical movement of the partition plate 25 can be easily performed by changing the position of the screwing to the through groove 29 of the partition plate 25.

  Furthermore, the partition plate 25 is detachable, and the work of removing the metal fine particles adhering to the surface by removing the partition plate 25 from the base 24 can be easily performed. Similarly, the base 24 can also be removed from the vapor deposition chamber 8 by removing the screw 27, and the work of removing metal fine particles adhering to the surface can be easily performed.

  Although not shown in FIGS. 1 and 2, a cooling pipe may be provided in the base 24. By providing the cooling pipe in the base 24 in this way, it is possible to suppress the base 24 from being heated by heat from the boat 13 during vapor deposition. Once the base 24 is heated, the metal fine particles once attached to the base 24 are re-evaporated, and it is very difficult to control the amount of metal vapor scattered from each space partitioned by the partition wall 18 to the dielectric film 3. Become. That is, in controlling the amount of the metal vapor scattered on the dielectric film 3, it is very important to provide a cooling pipe in the base portion 24 to suppress re-evaporation of the metal fine particles. This cooling mechanism may also be provided on the partition plate 25 with the same configuration as described above.

  In this embodiment, the evaporation sources 16 and 17 are provided in the same boat 13. Even in such a configuration, the partition wall 18 can partition the evaporation sources 16 and 17 by providing the notch 31 near the bottom center of the base 24 and disposing the boat 13 at the position of the notch 31. . In order to prevent the metal vapor in one space from flowing into the other space through the notch 31, it is desirable to make the diameter of the notch 31 as small as possible.

  In this embodiment, two evaporation sources are used, but the present invention is not limited to this. That is, three or more evaporation sources may be provided. For example, when three evaporation sources are provided, the adjacent evaporation sources may be partitioned by two partition walls 18 and the vapor deposition chamber 8 may be divided into three spaces. Then, the horizontal position of the base 24 of the two partition walls 18 is adjusted as appropriate to adjust the size of the space, and the vertical position of the partition plate 25 is adjusted as appropriate to form the dielectric film 3 on the dielectric film 3. The composition of the deposited metal electrode can be adjusted.

(Example 2)
The vacuum evaporation apparatus of a present Example is demonstrated using FIG. FIG. 4 is a perspective view showing the configuration of the vapor deposition chamber 42 of the vacuum vapor deposition apparatus of the present embodiment. In FIG. 4, the same components as those in the first embodiment are denoted by the same reference numerals, and the description thereof is omitted.

  First, in the vacuum vapor deposition apparatus of the present embodiment, the configuration of the boat in the vapor deposition chamber 42 is greatly different. That is, in the vacuum vapor deposition apparatus 1 of the first embodiment, the evaporation sources 16 and 17 are provided in the same boat 13, but in the vacuum vapor deposition apparatus of the present embodiment, two boats 43 and 44 are provided in the vapor deposition chamber 42. Is provided, and a position in contact with the wire rods on these boats 43 and 44 is an evaporation source. The two boats 43 and 44 provided in the vapor deposition chamber 42 are independently controlled, and the heating conditions can be changed independently. Therefore, the heating conditions are appropriately changed in accordance with the types and physical properties of the wire rods supplied to the respective boats 43 and 44, the wire rods can be heated under the optimum conditions, and metal vapor can be generated, which is excellent in reliability. A metal vapor deposition electrode can be formed on the dielectric film 3. Although not shown in FIG. 4, the boats 43 and 44 are connected to electrodes in the same manner as the boat 13 of the first embodiment, and due to Joule heat generated by flowing current from these electrodes during vapor deposition. Heated.

  Further, since the boats 43 and 44 are provided separately as described above, it is not necessary to provide the notch 31 in the base portion 46 of the partition wall 45 of the present embodiment, unlike the base portion 24 of the first embodiment. In Example 1, the metal vapor generated from each evaporation source sometimes flowed into the adjacent space through the notch 31. However, in this example, there is no such possibility, and a more dielectric film. It becomes easy to control the ratio of each metal component in the metal vapor deposition electrode formed on 3.

  Thus, also by the aspect of the vacuum vapor deposition apparatus in the present embodiment, the dielectric film is obtained by making the base portion 46 of the partition wall 45 provided in the vapor deposition chamber 42 movable in the horizontal direction and the partition plate 47 movable in the vertical direction. The vapor deposition state of the metal vapor on 3 can be changed as appropriate. As a result, the composition of the metal vapor deposition electrode formed on the dielectric film 3 can be controlled relatively easily, and a metallized film having excellent characteristics can be easily produced. The mechanism for making the base 46 and the partition plate 47 movable in the vapor deposition chamber 42 is the same as in the first embodiment. That is, it is realized by the locking portion 26 and the through groove 29, and these are denoted by the same reference numerals as in the first embodiment.

  Furthermore, in this embodiment, the two boats 43 and 44 provided in the vapor deposition chamber 42 can be controlled independently, and can be heated under optimum conditions according to the type and physical properties of the wire. As a result, the composition of the metal vapor deposition electrode can be further easily controlled, and a metallized film having excellent characteristics can be produced.

  Although not shown in FIG. 4, a cooling pipe may be provided in the base 46 as in the first embodiment. By providing the cooling pipe inside the base portion 46 in this way, it is possible to suppress the base portion 46 from being heated by heat from the boats 43 and 44 during vapor deposition, and to suppress re-evaporation of the metal fine particles. As a result, the amount of metal vapor scattered on the dielectric film 3 can be easily controlled.

  In this embodiment, two evaporation sources are used, but the present invention is not limited to this. For example, when three evaporation sources are provided, the adjacent evaporation sources may be partitioned by two partition walls 45, and the vapor deposition chamber 42 may be divided into three spaces. Then, the horizontal position of the base 46 of the two partition walls 45 is adjusted as appropriate to adjust the size of the space, and the vertical position of the partition plate 47 is adjusted as appropriate to form on the dielectric film 3. The composition of the deposited metal electrode and the distribution state of each metal can be adjusted.

  As described above, the vacuum deposition apparatus according to the present invention can easily control the ratio of each metal component in the metal deposition electrode formed on the dielectric film 3 as compared with the conventional vacuum deposition apparatus. It is possible to produce a metallized film having excellent characteristics. In the embodiments of the present invention, a resistance heating method is used as a film forming method. In addition to this resistance heating method, an induction heating method, an electron beam method, a sputtering method, and the like are combined. May be used.

  The vacuum evaporation apparatus according to the present invention can easily control the ratio and distribution state of each metal component in the metal evaporation electrode formed on the dielectric film, and can produce a metallized film having excellent characteristics. Is possible. Therefore, the vacuum evaporation apparatus of this invention can be suitably employ | adopted for manufacture of the metallized film of the metallized film capacitor used for various electronic devices, an electric device, industrial equipment, a motor vehicle, etc.

DESCRIPTION OF SYMBOLS 1,41 Vacuum deposition apparatus 2 Vacuum tank 3 Dielectric film 4 Original fabric roll 5, 19 Rotating roller 6 Main can 7 Pattern roll 8, 42 Deposition chamber 9, 10 Wire material 11, 12 Wire material supply roll 13, 43, 44 Boat 14 , 15 Electrodes 16, 17 Evaporation source 18, 45 Partition 20 Take-up roll 21 Adhesion prevention plate 22, 23 Wire rod supply hole 24, 46 Base 25, 47 Partition plate 26 Locking portion 27, 30 Screw 28 Screw stop hole 29 Through groove 31 Notch

Claims (6)

It is a vacuum evaporation apparatus that deposits metal fine particles on the surface of the substrate while conveying the substrate at a predetermined speed.
A deposition chamber disposed below the substrate and having an upper opening;
A plurality of evaporation sources provided in the vapor deposition chamber and generating metal vapor by heating a metal material;
In the vapor deposition chamber, comprising a partition that partitions the plurality of evaporation sources,
The partition is
A plate-like base movable in the horizontal direction in the vapor deposition chamber;
A vacuum deposition apparatus having a partition plate provided on an upper portion of the base and movable in a vertical direction. The said base has a latching | locking part in the both ends of a horizontal direction, and it fixes to the arbitrary positions of the said vapor deposition chamber by latching the said latching | locking part to the bottom face or side wall of the said vapor deposition chamber. The vacuum evaporation apparatus as described. The vacuum vapor deposition apparatus according to claim 1, wherein the partition plate is detachable from the base. The vacuum deposition apparatus according to claim 1, wherein the base has a cooling pipe inside. The vacuum evaporation apparatus according to claim 1, wherein the plurality of evaporation sources are provided in the same boat. The vacuum evaporation apparatus according to claim 1, wherein the plurality of evaporation sources are respectively provided in separate boats.

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