JP2012208295A - Electro-optic device, projection-type display device, electronic equipment, method for manufacturing electro-optic device - Google Patents

Abstract

An object of the present invention is to provide an electro-optical device, a projection display device, an electronic apparatus, and a method of manufacturing an electro-optical device that can alleviate unevenness of pixel electrodes caused by contact holes.
In the element substrate of the liquid crystal device, when the second electrode layer 7a and the pixel electrode 9a are electrically connected, the bottom 45a1 of the contact hole 45a is avoided and the side wall 45a2 of the contact hole 45a and the outside of the contact hole 45a Two insulating films 47 are provided. For this reason, the planar size of the contact hole 45a is reduced by the thickness of the second insulating film 47 provided on the side wall 45a2 of the contact hole 45a. Such a structure can be realized by forming the second insulating film 47 after forming the contact hole 45 a and performing anisotropic etching on the second insulating film 47.
[Selection] Figure 5

Description

  The present invention relates to an electro-optical device, a projection display device, an electronic apparatus, and a method for manufacturing an electro-optical device, in which a conductive layer that is conductive through a contact hole is formed on an element substrate.

  In an element substrate used in an electro-optical device such as a liquid crystal device or an organic electroluminescence device, pixels having pixel electrodes are arranged in a matrix, and each of the plurality of pixels includes a pixel transistor composed of a field effect transistor. Is configured. Further, the element substrate employs a structure in which conductive layers are electrically connected to each other through a contact hole formed in an insulating film (see, for example, Patent Document 1).

  In such an element substrate, when the planar size of the contact hole is large, there is a problem that a great restriction is imposed on the wiring layout. In the case of a liquid crystal device, if the contact hole used for conduction between the pixel electrode and the lower layer side electrode is large, large irregularities are formed on the surface of the pixel electrode, making it impossible to form an alignment film. There is a problem.

  On the other hand, in a light emitting device such as an electroluminescence device, a technology has been proposed in which a planar size of a contact hole is reduced by using a convex portion formed on a lower layer side and an etch back technology (see Patent Document 2). In the technique described in Patent Document 2, as shown in FIG. 7A, first, a convex insulating film 92 that partially overlaps the surface of the conductive layer 91 is formed in the removal region of the conductive layer 91 on the lower layer side. After the formation, a conductive layer 93 is formed. Next, as shown in FIG. 7B, after an insulating film 94 is formed on the surface of the conductive layer 93, anisotropic etching is performed on the insulating film 94, and as shown in FIG. The insulating film 94 is removed from the bottom of the recess 93a generated in the layer 93, while the insulating film 94 is left on the side wall of the recess 93a. Next, the insulating film 94 is removed from the bottom of the recess 93a, while the insulating film 94 is left on the side wall of the recess 93a. As a result, a contact hole 94 a having a small planar size is formed in the insulating film 94. Next, as shown in FIG. 7D, when the conductive layer 95 is formed on the surface side of the insulating film 94, the conductive layer 95 is electrically connected to the conductive layer 93 at the bottom of the contact hole 94a.

JP 2010-96966 A JP 2008-96876 A

  However, in the configuration described with reference to FIGS. 7A to 7D, the contact hole 94a having a small planar size can be formed, but a protrusion due to the insulating film 92 is generated around the contact hole 94a. There is a problem of doing. In addition, although the planar size of the contact hole 94a itself is small, the planar size of the entire contact portion including the convex portion due to the insulating film 92 is large, which causes a problem that a great restriction is imposed on the wiring layout and the like. is there.

  In view of the above problems, an object of the present invention is to provide an electro-optical device, a projection display device, an electronic apparatus, and a method for manufacturing an electro-optical device that can alleviate unevenness of a pixel electrode caused by a contact hole. There is to do.

  In order to solve the above problems, an electro-optical device according to the present invention is provided on a side opposite to the substrate with respect to the first conductive layer, the first conductive layer provided on one side of the substrate, A first insulating film in which a contact hole reaching the first conductive layer is formed; a second insulating film provided on a side wall of the contact hole avoiding a bottom of the contact hole; and the first insulating film A second conductive layer provided on a side opposite to the substrate and conducting to the first conductive layer at a bottom of the contact hole, wherein the second conductive layer is a pixel electrode, The insulating film is a silicate glass doped with at least one of phosphorus and boron, and outside the contact hole, between the first insulating film and the second conductive layer and a non-conductive layer of the second conductive layer. Provided in the formation area And said that you are.

  In addition, the method for manufacturing an electro-optical device according to the present invention includes a first conductive layer forming step of forming a first conductive layer on one side of the substrate, A first insulating film forming step for forming one insulating film; a contact hole forming step for forming a contact hole reaching the first conductive layer in the first insulating film; and the first insulating film with respect to the first insulating film. A second insulating film forming step of forming a second insulating film made of silicate glass doped with at least one of phosphorus and boron on the opposite side of the conductive layer; and anisotropic etching with respect to the second insulating film Performing an etch-back step of removing the second insulating film from the bottom of the contact hole and leaving the second insulating film on the side wall of the contact hole and outside the contact hole; and Characterized in that it comprises a second conductive layer forming step of forming a second conductive layer serving as a pixel electrode electrically connected to the first conductive layer at the bottom of Lumpur, the.

  In the present invention, the second insulating film is formed inside the contact hole of the first insulating film provided between the first conductive layer and the second conductive layer, and the second insulating film is formed in the contact hole. It is provided on the side wall of the contact hole avoiding the bottom. For this reason, the planar size of the contact hole is reduced by the thickness of the second insulating film provided on the side wall of the contact hole. In addition, since the second insulating film is not formed at the bottom of the contact hole, there is no problem for the second conductive layer to conduct to the first conductive layer at the bottom of the contact hole. Therefore, according to the present invention, it is possible to reduce the planar size of the contact hole without generating extra unevenness that occurs in the configuration described in Patent Document 2. The second insulating film is silicate glass doped with at least one of phosphorus and boron, and the silicate glass is porous and has hygroscopicity. For this reason, since the second insulating film removes moisture from the side where the second conductive layer is located, the characteristics and reliability of the electro-optical device can be improved. In addition, since the second insulating film is provided outside the contact hole, in the interlayer between the first insulating film and the second conductive layer and in the non-forming region of the second conductive layer, Does not cause unevenness due to the second insulating film. In addition, since the second insulating film has a wide formation range because it is provided inside and outside the contact hole, it has a high moisture absorption capability. Furthermore, since the second insulating film is also provided inside the contact hole, there is an advantage that the moisture absorption capacity increases as the number of contact holes increases. Here, since a contact hole is provided for each pixel electrode, the number of contact holes increases as the number of pixel electrodes (number of pixels) increases. As a result, since the formation range of the second insulating film is widened, there is an advantage that the water absorption ability is improved. Particularly in the present invention, the second conductive layer is a pixel electrode. In the case of a liquid crystal device, an alignment film is formed on the surface side of the pixel electrode. In the case of an organic electroluminescence device, an organic electroluminescence layer is formed on the surface side of the pixel electrode. A functional layer of the luminescence element is provided. Therefore, it is possible to prevent the unevenness caused by the contact hole from hindering the formation of the alignment film and the functional layer.

  In the present invention, when the electro-optical device is configured as a liquid crystal device, the substrate has a configuration in which a liquid crystal layer is held between the substrate and a counter substrate disposed to face the one surface.

  The electro-optical device to which the present invention is applied can be used for various display devices such as a direct-view display device in various electronic devices. When the electro-optical device to which the present invention is applied is a liquid crystal device, the electro-optical device (liquid crystal device) can be used for a projection display device. Such a projection display device includes a light source unit that emits illumination light applied to an electro-optical device (liquid crystal device) to which the present invention is applied, and a projection optical system that projects light modulated by the liquid crystal device. is doing.

1 is a block diagram illustrating an electrical configuration of a liquid crystal device (electro-optical device) to which the present invention is applied. It is explanatory drawing of the liquid crystal panel used for the liquid crystal device to which this invention is applied. It is explanatory drawing of the pixel of the liquid crystal device to which this invention is applied. It is explanatory drawing which expands and shows the cross-sectional structure of the pixel electrode periphery in the liquid crystal device to which this invention is applied. It is explanatory drawing which shows the principal part of the manufacturing process of the liquid crystal device to which this invention is applied. It is a schematic block diagram of the projection type display apparatus using the liquid crystal device to which this invention is applied. It is explanatory drawing which shows the conventional problem.

  Embodiments of the present invention will be described with reference to the drawings. In the following description, among various electro-optical devices, in the liquid crystal device and the manufacturing method thereof, the case where the present invention is applied to an electrical connection portion between the second electrode layer 7a and the pixel electrode 9a will be mainly described. To do. Therefore, in the following description, the first conductive layer in the present invention corresponds to the second electrode layer 7a, and the second conductive layer in the present invention corresponds to the pixel electrode 9a. In the drawings referred to in the following description, the scales are different for each layer and each member so that each layer and each member have a size that can be recognized on the drawing. In addition, when the direction of the current flowing through the pixel transistor is reversed, the source and the drain are switched. In this description, the side to which the pixel electrode is connected (pixel side source / drain region) is the drain, and the data line is connected. The source side (data line side source / drain region) is the source. Further, when describing the layers formed on the element substrate, the upper layer side or the surface side means the side opposite to the side where the substrate body of the element substrate is located (the side on which the counter substrate is located), and the lower layer side means It means the side where the substrate body of the element substrate is located.

[Description of liquid crystal device (electro-optical device)]
(overall structure)
FIG. 1 is a block diagram showing an electrical configuration of a liquid crystal device to which the present invention is applied. Note that FIG. 1 is a block diagram showing the electrical configuration to the last, and therefore the layout, such as the direction in which the capacitor lines extend, is schematically shown.

  In FIG. 1, a liquid crystal device 100 of this embodiment includes a liquid crystal panel 100p in a TN (Twisted Nematic) mode or a VA (Vertical Alignment) mode, and the liquid crystal panel 100p has a plurality of pixels 100a in a matrix in a matrix area. Image display area 10a (pixel area) arranged in a shape. In the liquid crystal panel 100p, in the element substrate 10 (see FIG. 2 and the like) to be described later, a plurality of data lines 6a and a plurality of scanning lines 3a extend vertically and horizontally inside the image display region 10a. A pixel 100a is configured at a corresponding position. In each of the plurality of pixels 100a, a pixel transistor 30 made of a field effect transistor and a pixel electrode 9a described later are formed. The data line 6 a is electrically connected to the source of the pixel transistor 30, the scanning line 3 a is electrically connected to the gate of the pixel transistor 30, and the pixel electrode 9 a is electrically connected to the drain of the pixel transistor 30. Has been.

  In the element substrate 10, a scanning line driving circuit 104 and a data line driving circuit 101 are provided on the outer peripheral side of the image display region 10 a. The data line driving circuit 101 is electrically connected to each data line 6a, and sequentially supplies the image signal supplied from the image processing circuit to each data line 6a. The scanning line driving circuit 104 is electrically connected to each scanning line 3a, and sequentially supplies a scanning signal to each scanning line 3a.

  In each pixel 100a, the pixel electrode 9a is opposed to a common electrode formed on a counter substrate 20 (see FIG. 2 and the like), which will be described later, via a liquid crystal layer, and constitutes a liquid crystal capacitor 50a. Further, a storage capacitor 55 is added to each pixel 100a in parallel with the liquid crystal capacitor 50a in order to prevent fluctuation of the image signal held in the liquid crystal capacitor 50a. In this embodiment, in order to form the storage capacitor 55, the first electrode layer 5a straddling the plurality of pixels 100a is formed as a capacitor electrode layer. In this embodiment, the first electrode layer 5a is electrically connected to the common potential line 5c to which the common potential Vcom is applied.

(Configuration of the liquid crystal panel 100p)
FIG. 2 is an explanatory diagram of a liquid crystal panel 100p used in the liquid crystal device 100 to which the present invention is applied. FIGS. 2A and 2B show the liquid crystal panel 100p together with the respective components from the counter substrate side. FIG. 6 is a plan view and a sectional view taken along the line HH ′.

  As shown in FIGS. 2A and 2B, in the liquid crystal panel 100p, the element substrate 10 (element substrate for the electro-optical device) and the counter substrate 20 are bonded to each other with a sealant 107 through a predetermined gap. The sealing material 107 is provided in a frame shape along the outer edge of the counter substrate 20. The sealing material 107 is an adhesive made of a photo-curing resin, a thermosetting resin, or the like, and is mixed with a gap material such as glass fiber or glass beads for setting the distance between both substrates to a predetermined value.

  In the liquid crystal panel 100p having such a configuration, the element substrate 10 and the counter substrate 20 are both square, and the image display area 10a described with reference to FIG. 1 is provided as a square area in the approximate center of the liquid crystal panel 100p. ing. Corresponding to this shape, the sealing material 107 is also provided in a substantially rectangular shape, and a substantially rectangular peripheral region 10b is provided in a frame shape between the inner peripheral edge of the sealing material 107 and the outer peripheral edge of the image display region 10a. Yes. In the element substrate 10, a data line driving circuit 101 and a plurality of terminals 102 are formed along one side of the element substrate 10 outside the image display region 10 a, and scanning lines are formed along other sides adjacent to the one side. A drive circuit 104 is formed. Note that a flexible wiring board (not shown) is connected to the terminal 102, and various potentials and various signals are input to the element substrate 10 through the flexible wiring board.

  As will be described in detail later, on the one surface 10s side of the one surface 10s and the other surface 10t of the element substrate 10, the pixel transistor 30 and the pixel transistor 30 described with reference to FIG. The pixel electrodes 9a to be connected are formed in a matrix, and an alignment film 16 is formed on the upper layer side of the pixel electrodes 9a.

  Further, on the one surface 10s side of the element substrate 10, a dummy pixel electrode 9b (see FIG. 2B) formed simultaneously with the pixel electrode 9a is formed in the peripheral region 10b. For the dummy pixel electrode 9b, a configuration in which the dummy pixel transistor is electrically connected, a configuration in which the dummy pixel transistor is not provided, and a configuration in which the dummy pixel electrode is directly electrically connected to the wiring, or a floating state in which no potential is applied The structure which exists in is adopted. The dummy pixel electrode 9b compresses the height positions of the image display region 10a and the peripheral region 10b when the surface on which the alignment film 16 is formed in the element substrate 10 is flattened by polishing, and the alignment film 16 is formed. This contributes to a flat surface. Further, if the dummy pixel electrode 9b is set to a predetermined potential, it is possible to prevent the disorder of the alignment of the liquid crystal molecules at the outer peripheral side end of the image display region 10a.

  A common electrode 21 is formed on one side of the counter substrate 20 facing the element substrate 10, and an alignment film 26 is formed on the common electrode 21. The common electrode 21 is formed across the plurality of pixels 100a as substantially the entire surface of the counter substrate 20 or a plurality of strip electrodes. Further, a light shielding layer 108 is formed on the lower layer side of the common electrode 21 on one surface side of the counter substrate 20 facing the element substrate 10. In this embodiment, the light shielding layer 108 is formed in a frame shape extending along the outer peripheral edge of the image display region 10a, and functions as a parting. Here, the outer peripheral edge of the light shielding layer 108 is located with a gap between the inner peripheral edge of the sealing material 107 and the light shielding layer 108 and the sealing material 107 do not overlap. In the counter substrate 20, the light shielding layer 108 may be formed as a black matrix portion in an area that overlaps an inter-pixel area sandwiched between adjacent pixel electrodes 9 a.

  In the liquid crystal panel 100p configured as described above, the element substrate 10 is electrically connected between the element substrate 10 and the counter substrate 20 in a region overlapping the corner portion of the counter substrate 20 outside the sealant 107. The inter-substrate conduction electrode 109 is formed. The inter-substrate conducting material 109 a containing conductive particles is disposed on the inter-substrate conducting electrode 109, and the common electrode 21 of the counter substrate 20 is interposed via the inter-substrate conducting material 109 a and the inter-substrate conducting electrode 109. Are electrically connected to the element substrate 10 side. Therefore, the common potential Vcom is applied to the common electrode 21 from the element substrate 10 side. The sealing material 107 is provided along the outer peripheral edge of the counter substrate 20 with substantially the same width dimension. For this reason, the sealing material 107 is substantially rectangular. However, the sealing material 107 is provided so as to pass inside avoiding the inter-substrate conduction electrode 109 in a region overlapping the corner portion of the counter substrate 20, and the corner portion of the sealing material 107 has a substantially arc shape.

  In the liquid crystal device 100 having such a configuration, when the pixel electrode 9a and the common electrode 21 are formed of a light-transmitting conductive film such as ITO or IZO, a transmissive liquid crystal device can be configured. On the other hand, when the common electrode 21 is formed of a light-transmitting conductive film such as ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide) and the pixel electrode 9a is formed of a reflective conductive film such as aluminum, a reflective type is obtained. The liquid crystal device can be configured. When the liquid crystal device 100 is of a reflective type, light incident from the counter substrate 20 side is modulated while being reflected by the substrate on the element substrate 10 side and emitted, thereby displaying an image. In the case where the liquid crystal device 100 is a transmissive type, the light incident from one of the element substrate 10 and the counter substrate 20 is modulated while being transmitted through the other substrate, and an image is displayed.

  The liquid crystal device 100 can be used as a color display device of an electronic device such as a mobile computer or a mobile phone. In this case, a color filter (not shown) and a protective film are formed on the counter substrate 20. In the liquid crystal device 100, a retardation film, a polarizing plate, and the like are arranged in a predetermined direction with respect to the liquid crystal panel 100p according to the type of the liquid crystal layer 50 to be used and the normally white mode / normally black mode. The Furthermore, the liquid crystal device 100 can be used as a light valve for RGB in a projection display device (liquid crystal projector) described later. In this case, each color liquid crystal device 100 for RGB receives light of each color separated through RGB color separation dichroic mirrors as projection light, so that no color filter is formed.

  In this embodiment, the liquid crystal device 100 is a transmissive liquid crystal device used as a RGB light valve in a projection display device described later, and light incident from the counter substrate 20 is transmitted through the element substrate 10 and emitted. The case will be mainly described. Further, in this embodiment, the liquid crystal device 100 will be described focusing on the case where the liquid crystal layer 50 includes a VA mode liquid crystal panel 100p using a nematic liquid crystal compound having a negative dielectric anisotropy.

(Specific pixel configuration)
3A and 3B are explanatory diagrams of pixels of the liquid crystal device 100 to which the present invention is applied. FIGS. 3A and 3B are a plan view of adjacent pixels in the element substrate 10 and FIG. It is sectional drawing when the liquid crystal device 100 is cut | disconnected in the position corresponded to FF 'line. In FIG. 3A, each region is represented by the following line.
Scanning line 3a = thick solid line Semiconductor layer 1a = thin and short dotted line Data line 6a and drain electrode 6b = dot and dash line First electrode layer 5a and relay electrode 5b = thin and long broken line Second electrode layer 7a = two-dot chain line Pixel electrode 9a = Thick and short dashed line

  As shown in FIG. 3A, a rectangular pixel electrode 9a is formed on each of the plurality of pixels 100a on the element substrate 10, and a vertical and horizontal inter-pixel region 10f sandwiched between adjacent pixel electrodes 9a. A data line 6a and a scanning line 3a are formed along the overlapping area. More specifically, in the inter-pixel region 10f, the scanning line 3a extends along the region overlapping the first inter-pixel region 10g extending along the scanning line 3a, and extends along the data line 6a. A data line 6a extends along a region overlapping the second inter-pixel region 10h. Each of the data line 6a and the scanning line 3a extends linearly, and a pixel transistor 30 is formed in a region where the data line 6a and the scanning line 3a intersect. On the element substrate 10, the first electrode layer 5a (capacitance electrode layer) described with reference to FIG. 1 is formed so as to overlap the data line 6a.

  As shown in FIGS. 3A and 3B, the element substrate 10 includes a translucent substrate body 10w such as a quartz substrate and a glass substrate, and a surface of the substrate body 10w on the liquid crystal layer 50 side (on the one surface 10s side). The pixel electrode 9a, the pixel transistor 30 for pixel switching, and the alignment film 16 are mainly formed. The counter substrate 20 includes a translucent substrate main body 20w such as a quartz substrate or a glass substrate, a common electrode 21 formed on a surface of the liquid crystal layer 50 side (one surface facing the element substrate 10), and an alignment film 26. Is the main constituent.

In the element substrate 10, a scanning line 3 a made of a conductive film such as a conductive polysilicon film, a metal silicide film, a metal film, or a metal film compound is formed on one surface side of the substrate body 10 w. In this embodiment, the scanning line 3 a is made of a light-shielding conductive film such as tungsten silicide (WSi _x ), and also functions as a light-shielding film for the pixel transistor 30. In this embodiment, the scanning line 3a is made of tungsten silicide having a thickness of about 200 nm. An insulating film such as a silicon oxide film may be provided between the substrate body 10w and the scanning line 3a.

An insulating film 12 such as a silicon oxide film is formed on the upper side of the scanning line 3a on the one surface 10s side of the substrate body 10w, and the pixel transistor 30 including the semiconductor layer 1a on the surface of the insulating film 12 is formed. Is formed. In this embodiment, the insulating film 12 is formed by, for example, a silicon oxide formed by a low pressure CVD method using tetraethoxysilane (Si (OC ₂ H ₅ ) ₄ ) or a plasma CVD method using tetraethoxysilane and oxygen gas. It has a two-layer structure of a film and a silicon oxide film (HTO (High Temperature Oxide) film) formed by a high temperature CVD method.

  The pixel transistor 30 extends in a direction perpendicular to the length direction of the semiconductor layer 1a, and a semiconductor layer 1a having a long side direction in the extending direction of the scan line 3a in the intersection region of the scan line 3a and the data line 6a. The gate electrode 3c is provided so as to overlap the central portion in the length direction of the semiconductor layer 1a. Further, the pixel transistor 30 has a light-transmitting gate insulating layer 2 between the semiconductor layer 1a and the gate electrode 3c. The semiconductor layer 1a includes a channel region 1g opposed to the gate electrode 3c via the gate insulating layer 2, and includes a source region 1b and a drain region 1c on both sides of the channel region 1g. In this embodiment, the pixel transistor 30 has an LDD structure. Accordingly, each of the source region 1b and the drain region 1c includes the low concentration regions 1b1, 1c1 on both sides of the channel region 1g, and the high concentration in the region adjacent to the low concentration regions 1b1, 1c1 opposite to the channel region 1g. Regions 1b2 and 1c2 are provided.

  The semiconductor layer 1a is composed of a polycrystalline silicon film or the like. The gate insulating layer 2 has a two-layer structure of a first gate insulating layer 2a made of a silicon oxide film obtained by thermally oxidizing the semiconductor layer 1a and a second gate insulating layer 2b made of a silicon oxide film or the like formed by a CVD method or the like. Consists of. The gate electrode 3c is made of a conductive film such as a conductive polysilicon film, a metal silicide film, a metal film, or a metal film compound, and contacts that penetrate the second gate insulating layer 2b and the insulating film 12 on both sides of the semiconductor layer 1a. It is electrically connected to the scanning line 3a through the holes 12a and 12b. In this embodiment, the gate electrode 3c has a two-layer structure of a conductive polysilicon film having a thickness of about 100 nm and a tungsten silicide film having a thickness of about 100 nm.

  In this embodiment, when the light after passing through the liquid crystal device 100 is reflected by another member, the reflected light is incident on the semiconductor layer 1a and the pixel transistor 30 malfunctions due to the photocurrent. For the purpose of prevention, the scanning line 3a is formed of a light shielding film. However, the scanning line may be formed in the upper layer of the gate insulating layer 2 and a part thereof may be used as the gate electrode 3c. In this case, the scanning line 3a shown in FIG. 3 is formed only for light shielding.

A translucent interlayer insulating film 41 made of a silicon oxide film or the like is formed on the upper layer side of the gate electrode 3c. On the upper layer of the interlayer insulating film 41, the data line 6a and the drain electrode 6b are made of the same conductive film. Is formed. The interlayer insulating film 41 is made of, for example, a silicon oxide film formed by a plasma CVD method using silane gas (SH ₄ ) and nitrous oxide (N ₂ O).

  The data line 6a and the drain electrode 6b are made of a conductive film such as a conductive polysilicon film, a metal silicide film, a metal film, or a metal film compound. In this embodiment, the data line 6a and the drain electrode 6b are formed of a titanium (Ti) film having a thickness of 20 nm, a titanium nitride (TiN) film having a thickness of 50 nm, an aluminum (Al) film having a thickness of 350 nm, and a film thickness. It has a four-layer structure in which 150 nm TiN films are stacked in this order. The data line 6a is electrically connected to the source region 1b (data line side source / drain region) through a contact hole 41a penetrating the interlayer insulating film 41 and the second gate insulating layer 2b. The drain electrode 6b is formed so as to partially overlap the drain region 1c (pixel electrode side source / drain region) of the semiconductor layer 1a in a region overlapping the first inter-pixel region 10g. It is electrically connected to the drain region 1c through a contact hole 41b that penetrates the gate insulating layer 2b.

  A translucent interlayer insulating film 42 made of a silicon oxide film or the like is formed on the upper side of the data line 6a and the drain electrode 6b. The interlayer insulating film 42 is made of, for example, a silicon oxide film formed by a plasma CVD method using tetraethoxysilane and oxygen gas.

  On the upper layer side of the interlayer insulating film 42, the first electrode layer 5a and the relay electrode 5b are formed of the same conductive film. The first electrode layer 5a and the relay electrode 5b are made of a conductive film such as a conductive polysilicon film, a metal silicide film, a metal film, or a metal film compound. In this embodiment, the first electrode layer 5a and the relay electrode 5b have a two-layer structure of an Al film having a thickness of about 200 nm and a TiN film having a thickness of about 100 nm. Similar to the data line 6a, the first electrode layer 5a extends along a region overlapping the second inter-pixel region 10h. The relay electrode 5b is formed so as to partially overlap the drain electrode 6b in a region overlapping the first inter-pixel region 10g, and is electrically connected to the drain electrode 6b through a contact hole 42a penetrating the interlayer insulating film 42. ing.

  A translucent interlayer insulating film 44 such as a silicon oxide film is formed as an etching stopper layer on the upper side of the first electrode layer 5a and the relay electrode 5b. The interlayer insulating film 44 includes the first electrode layer 5a. An opening 44b is formed in a region overlapping with. In this embodiment, the interlayer insulating film 44 is made of a silicon oxide film or the like formed by a plasma CVD method using tetraethoxysilane and oxygen gas. Here, although not shown in FIG. 3A, the opening 44b is a portion extending along a region overlapping with the first inter-pixel region 10g starting from the intersection region between the data line 6a and the scanning line 3a. And a portion extending along a region overlapping the second inter-pixel region 10h starting from the intersection region of the data line 6a and the scanning line 3a.

  A translucent dielectric layer 40 is formed on the upper layer side of the interlayer insulating film 44, and a second electrode layer 7 a is formed on the upper layer side of the dielectric layer 40. The second electrode layer 7a is made of a conductive film such as a conductive polysilicon film, a metal silicide film, a metal film, or a metal film compound. In this embodiment, the second electrode layer 7a is made of a TiN film having a thickness of about 100 nm. As the dielectric layer 40, a silicon compound such as a silicon oxide film or a silicon nitride film can be used, and an aluminum oxide film, a titanium oxide film, a tantalum oxide film, a niobium oxide film, a hafnium oxide film, a lanthanum oxide film, zirconium A dielectric layer having a high dielectric constant such as an oxide film can be used. The second electrode layer 7a includes a portion extending along a region overlapping the first inter-pixel region 10g starting from an intersection region between the data line 6a and the scanning line 3a, and an intersection region between the data line 6a and the scanning line 3a. And a portion extending along a region overlapping with the second inter-pixel region 10h. Therefore, a portion of the second electrode layer 7 a that extends along the region overlapping with the second inter-pixel region 10 h is the first electrode layer 5 a via the dielectric layer 40 in the opening 44 b of the interlayer insulating film 44. It overlaps with. In this way, in the present embodiment, the first electrode layer 5a, the dielectric layer 40, and the second electrode layer 7a constitute the storage capacitor 55 in a region overlapping the first inter-pixel region 10g.

  In the second electrode layer 7a, the portion extending along the region overlapping the first inter-pixel region 10g partially overlaps the relay electrode 5b and penetrates the dielectric layer 40 and the interlayer insulating film 44. It is electrically connected to the relay electrode 5b through the contact hole 44a.

  A light-transmitting first insulating film 45 is formed as an interlayer insulating film on the upper layer side of the second electrode layer 7a, and the upper layer side of the first insulating film 45 is made of a light-transmitting conductive film such as an ITO film. A pixel electrode 9a is formed. The first insulating film 45 is made of, for example, a silicon oxide film formed by a plasma CVD method using tetraethoxysilane and oxygen gas. The pixel electrode 9 a partially overlaps the second electrode layer 7 a in the vicinity of the intersection region between the data line 6 a and the scanning line 3 a, and the second electrode layer via the contact hole 45 a penetrating the first insulating film 45. 7a is conducted.

  In this embodiment, as will be described later with reference to FIGS. 4 to 6, a second insulating film 47 is formed inside the contact hole 45a. The second insulating film 47 is also formed on the surface of the first insulating film 45, and the pixel electrode 9 a is formed on the surface of the second insulating film 47. In the present embodiment, the second insulating film 47 is made of silicate glass doped with at least one of phosphorus and boron.

An alignment film 16 is formed on the surface of the pixel electrode 9a. The alignment film 16 is made of a resin film such as polyimide or an oblique deposition film such as a silicon oxide film. In this embodiment, the alignment film 16 is an obliquely deposited film of SiO _x (x <2), SiO ₂ , TiO ₂ , MgO, Al ₂ O ₃ , In ₂ O ₃ , Sb ₂ O ₃ , Ta ₂ O ₅ or the like. An inorganic alignment film (vertical alignment film).

The counter substrate 20 is made of a light-transmitting conductive film such as an ITO film on the surface of the light-transmitting substrate body 20 w such as a quartz substrate or a glass substrate on the liquid crystal layer 50 side (surface facing the element substrate 10). A common electrode 21 is formed, and an alignment film 26 is formed so as to cover the common electrode 21. Similar to the alignment film 16, the alignment film 26 is made of a resin film such as polyimide or an oblique deposition film such as a silicon oxide film. In this embodiment, the alignment film 26 is an obliquely deposited film such as SiO _x (x <2), SiO ₂ , TiO ₂ , MgO, Al ₂ O ₃ , In ₂ O ₃ , Sb ₂ O ₃ , Ta ₂ O _5. An inorganic alignment film (vertical alignment film). The alignment films 16 and 26 vertically align the nematic liquid crystal compound having negative dielectric anisotropy used for the liquid crystal layer 50, and the liquid crystal panel 100p operates as a normally black VA mode.

  Note that the data line driving circuit 101 and the scanning line driving circuit 104 described with reference to FIGS. 1 and 2 are complementary transistor circuits each including an n-channel driving transistor and a p-channel driving transistor. Etc. are configured. Here, the driving transistor is formed by utilizing a part of the manufacturing process of the pixel transistor 30. Therefore, the region where the data line driving circuit 101 and the scanning line driving circuit 104 are formed in the element substrate 10 also has a cross-sectional configuration substantially similar to the cross-sectional configuration shown in FIG.

(Detailed configuration around the pixel electrode 9a)
FIG. 4 is an explanatory diagram showing an enlarged cross-sectional configuration around the pixel electrode 9a in the liquid crystal device 100 to which the present invention is applied.

  As shown in FIG. 4, a translucent first insulating film 45 is formed as an interlayer insulating film on the upper layer side of the second electrode layer 7a (first conductive layer), and the upper layer side of the first insulating film 45 A pixel electrode 9a (second conductive layer) made of a light-transmitting conductive film such as an ITO film having a thickness of about 140 nm is formed. An alignment film 16 is formed on the surface side of the pixel electrode 9a. The first insulating film 45 is formed with a contact hole 45a that penetrates the first insulating film 45 and reaches the second electrode layer 7a. The pixel electrode 9a is formed at the bottom 45a1 of the contact hole 45a at the second electrode layer. 7a is conducted.

  Here, a second insulating film 47 is formed inside the contact hole 45a, and the second insulating film 47 avoids the bottom 45a1 of the contact hole 45a inside the contact hole 45a. It is formed only on the side wall 45a2. Accordingly, inside the contact hole 45a, the pixel electrode 9a is laminated on the surface of the second insulating film 47 in a portion corresponding to the side wall 45a2 of the contact hole 45a. In this state, the second electrode is formed at the bottom 45a1 of the contact hole 45a. Conductive to layer 7a. Thus, in the liquid crystal device 100 of this embodiment, the substantial contact hole is the through hole 47a defined by the inner peripheral surface of the second insulating film 47 in the contact hole 45a. Accordingly, the planar size of the contact hole 45a is substantially reduced by the thickness of the portion 47e formed in the side wall 45a2 of the contact hole 45a in the second insulating film 47.

  The second insulating film 47 is also formed on the surface of the first insulating film 45 outside the contact hole 45a, and the pixel electrode 9a has a portion 47f of the second insulating film 47 that overlaps the first insulating film 45. It is formed on the surface. Here, the surface of the first insulating film 45 is planarized by a method such as chemical mechanical polishing. Therefore, in the second insulating film 47, the surface of the portion 47f overlapping the first insulating film 45 is a flat surface, and the pixel electrode 9a is formed on the flat surface. The second insulating film 47 is formed on substantially the entire surface, and is also formed in a region overlapping the pixel electrode 9a and a region overlapping the non-formation region (inter-pixel region 10f) of the pixel electrode 9a. Therefore, a portion 47g formed in a region overlapping with the inter-pixel region 10f is exposed from the pixel electrode 9a and is in contact with the alignment film 16.

  In this embodiment, the first insulating film 45 is made of a silicon oxide film formed by a plasma CVD method using tetraethoxysilane and oxygen gas, whereas the second insulating film 47 is made of phosphorus or boron. At least one is made of doped silicate glass.

(Manufacturing method of the liquid crystal device 100)
FIG. 5 is an explanatory view showing the main part of the manufacturing process of the liquid crystal device 100 to which the present invention is applied. In addition, although the process demonstrated below is performed in the state of the large sized substrate which can take many element substrates 10, in the following description, it demonstrates as the element substrate 10 irrespective of size.

  Of the manufacturing steps of the liquid crystal device 100 according to the present embodiment, in the step of forming the element substrate 10, the first conductive layer is formed after the interlayer insulating film 44 is formed as shown in FIG. In the process, the second electrode layer 7a (first conductive layer) is formed. More specifically, after a conductive film for forming the second electrode layer 7a is formed on the surface of the interlayer insulating film 44, the conductive film is patterned to form the second electrode layer 7a.

  Next, in the first insulating film forming step, a first insulating film 45 made of a silicon oxide film is formed on the surface side of the second electrode layer 7a by a plasma CVD method using tetraethoxysilane and oxygen gas. Next, the surface of the first insulating film 45 is polished and planarized. In this polishing process, chemical mechanical polishing can be used. In chemical mechanical polishing, a smooth polishing surface can be obtained at high speed by the action of chemical components contained in the polishing liquid and the relative movement between the abrasive and the element substrate 10. Can do. More specifically, in a polishing apparatus, polishing is performed while relatively rotating a surface plate on which a polishing cloth (pad) made of nonwoven fabric, polyurethane foam, porous fluororesin, or the like is attached and a holder for holding the element substrate 10. To do. At that time, for example, an abrasive containing cerium oxide particles having an average particle diameter of 0.01 to 20 μm, an acrylate derivative as a dispersant, and water is supplied between the polishing cloth and the element substrate 10.

  Next, in the contact hole forming step shown in FIGS. 5B and 5C, a contact hole 45 a is formed in the first insulating film 45. More specifically, as shown in FIG. 5B, a resist mask 450 is formed on the surface of the first insulating film 45 using a photolithography technique, and then the first insulating film 45 is etched, The resist mask 450 is removed. As a result, a contact hole 45a that penetrates the first insulating film 45 and reaches the second electrode layer 7a is formed in the first insulating film 45.

Next, in the second insulating film forming step shown in FIG. 5D, the second insulating film 47 is formed on the surface side of the first insulating film 45. At this time, the second insulating film 47 is formed thinner inside the contact hole 45a than outside the contact hole 45a. In this embodiment, a silicate glass doped with at least one of phosphorus and boron is formed as the second insulating film 47 by an atmospheric pressure CVD method or the like. Among such silicate glasses, the gas used for forming the phosphorus-doped silicate glass (PSG film) is SiH ₄ , PH ₃ , O _3, or the like. The gas used when forming boron-doped silicate glass (BSG film) is SiH ₄ , B ₂ H ₆ , O _3, etc., and the gas used when forming boron-phosphorous-doped silicate glass film (BPSG film). Are SiH ₄ , B ₂ H ₆ , PH ₃ , O _{3 and the} like.

Next, in the etch back step shown in FIG. 5E, anisotropic etching is performed on the second insulating film 47 to remove the second insulating film 47 from the bottom 45a1 of the contact hole 45a and to contact the hole 45a. The second insulating film 47 is left on the side wall 45a2. As a result, the planar size of the contact hole 45a is substantially reduced by the thickness of the portion 47e of the second insulating film 47 formed on the side wall 45a2 of the contact hole 45a. At this time, the second insulating film 47 formed outside the contact hole 45a is also etched, but the second insulating film 47 remains thin outside the contact hole 45a. Examples of such anisotropic etching include RIE (Reactive Ion Etching) using a fluorine-based gas such as CF ₄ (carbon tetrafluoride) or CHF ₃ (methane trifluoride). In such etching, the etching anisotropy is high and the etching amount can be easily controlled. Therefore, only the portion of the second insulating film 47 formed at the bottom 45a1 of the contact hole 45a can be reliably removed. Further, the second insulating film 47 can be reliably left outside the contact hole 45a.

  Next, in the second conductive layer forming step shown in FIG. 5F, when the pixel electrode 9a (second conductive layer) is formed, the pixel electrode 9a is formed at the bottom 45a1 of the contact hole 45a at the second electrode layer 7a (second conductive layer). 1 conductive layer). More specifically, a light-transmitting conductive film such as an ITO film constituting the pixel electrode 9a is formed by sputtering or the like, and then patterned to form the pixel electrode 9a.

  Thereafter, an alignment film 16 is formed as shown in FIG. In addition, since the process after that can use a well-known method, description is abbreviate | omitted.

(Main effects of this form)
As described above, according to this embodiment, the contact hole 45a of the first insulating film 45 provided between the second electrode layer 7a (first conductive layer) and the pixel electrode 9a (second conductive layer) is formed. A second insulating film 47 is formed inside, and the second insulating film 47 is provided on the side wall 45a2 of the contact hole 45a so as to avoid the bottom 45a1 of the contact hole 45a. For this reason, the planar size of the contact hole 45a is reduced by the thickness of the second insulating film 47 provided on the side wall 45a2 of the contact hole 45a. Therefore, when forming the resist mask 450 shown in FIG. 5B, a contact hole (hole 45a) having a small planar size can be formed without using an expensive exposure apparatus with high resolution. Further, since the second insulating film 47 is not formed at the bottom 45a1 of the contact hole 45a, the pixel electrode 9a (second conductive layer) is formed at the bottom 45a1 of the contact hole 45a at the second electrode layer 7a (first conductive layer). ) Is not hindered. Therefore, according to the present embodiment, it is possible to reduce the planar size of the contact hole 45a without generating extra unevenness that occurs in the configuration described in Patent Document 2.

  Therefore, when the contact hole 45a is arranged, there are few restrictions on the place where the contact hole 45a is arranged. Further, when the alignment film 16 is formed on the surface side of the pixel electrode 9a, the unevenness caused by the contact hole 45a is small, so that it does not hinder the formation of the alignment film 16 suitably. That is, when forming the alignment film 16 from an inorganic material, oblique deposition is performed on a surface without large unevenness, and therefore the alignment film 16 can be formed suitably. In addition, when the alignment film 16 is formed from an organic material such as polyimide, the surface of the alignment film 16 is free from large irregularities, and therefore the rubbing process can be performed appropriately. Therefore, the liquid crystal layer 50 can be suitably oriented, and the quality of the image displayed on the liquid crystal device 100 can be improved.

  Further, in the manufacturing method according to this embodiment, after forming the contact hole 45a in the first insulating film 45, the second insulating film 47 is formed, and in the subsequent etch back process, the second insulating film 47 is anisotropic. Etching is performed to remove the second insulating film 47 from the bottom 45a1 of the contact hole 45a and leave the second insulating film 47 on the side wall 45a2 of the contact hole 45a. For this reason, the planar size of the contact hole 45a can be reduced without performing a special process that is particularly troublesome.

  Further, in this embodiment, the second insulating film 47 is formed not only inside the contact hole 45a but also outside the contact hole 45a, between the first insulating film 45 and the pixel electrode 9a (second conductive layer), and in the pixel. It is also provided in a non-formation region (inter-pixel region 10f) of the electrode 9a (second conductive layer). For this reason, unevenness due to the second insulating film 45 does not occur on the surface side of the first insulating film 45.

  The second insulating film 47 is a silicate glass doped with at least one of phosphorus and boron, and the silicate glass is porous and has a hygroscopic property. In addition, a portion 47g formed in a region overlapping the inter-pixel region 10f in the second insulating film 47 is exposed from the pixel electrode 9a and is in contact with the alignment film 16. For this reason, when moisture is mixed in the liquid crystal layer 50 provided on the upper layer side of the pixel electrode 9a, or when moisture is adsorbed on the surface of the alignment film 16, the second insulating film 47 is interposed via the alignment film 16. Then, moisture is removed from the liquid crystal layer 50. Therefore, the characteristics and reliability of the liquid crystal device 100 can be improved.

  In addition, since the second insulating film 47 is formed within the contact hole 45a and outside the contact hole 45a, the second insulating film 47 has a wide formation range, and therefore has a high moisture absorption capability. Furthermore, since the second insulating film 47 is also provided inside the contact hole 45a, there is an advantage that the moisture absorption capacity increases as the number of the contact holes 45a increases. Here, since the contact hole 45a is provided for each pixel electrode 9a, the number of contact holes 45a increases as the number of pixel electrodes 9a (number of pixels) increases. For this reason, since the formation range of the 2nd insulating film 47 becomes wide, there exists an advantage that a moisture absorption capability improves.

[Other embodiments]
In the above embodiment, the example in which the present invention is applied to the transmissive liquid crystal device 100 has been described. However, the present invention may be applied to the reflective liquid crystal device 100.

  In the above embodiment, the example in which the present invention is applied to the liquid crystal device 100 has been described. However, the present invention may be applied to an electro-optical device other than the liquid crystal device 100 such as an organic electroluminescence device.

[Configuration example for electronic devices]
An electronic apparatus including the liquid crystal device 100 according to the above-described embodiment will be described. FIG. 6 is a schematic configuration diagram of a projection type display device using the liquid crystal device 100 to which the present invention is applied. FIGS. 6A and 6B are each a projection type display using the transmission type liquid crystal device 100. FIG. 2 is an explanatory diagram of the device and an explanatory diagram of a projection display device using the reflective liquid crystal device 100.

(First example of projection display device)
A projection display device 110 shown in FIG. 6A is a so-called projection type projection display device that irradiates light onto a screen 111 provided on the viewer side and observes light reflected by the screen 111. . The projection display device 110 includes a light source unit 130 including a light source 112, dichroic mirrors 113 and 114, liquid crystal light valves 115 to 117 (liquid crystal device 100), a projection optical system 118, a cross dichroic prism 119, and a relay. System 120.

  The light source 112 is composed of an ultrahigh pressure mercury lamp that supplies light including red light, green light, and blue light. The dichroic mirror 113 is configured to transmit red light from the light source 112 and reflect green light and blue light. The dichroic mirror 114 is configured to transmit blue light and reflect green light among the green light and the blue light reflected by the dichroic mirror 113. Thus, the dichroic mirrors 113 and 114 constitute a color separation optical system that separates the light emitted from the light source 112 into red light, green light, and blue light.

  Here, between the dichroic mirror 113 and the light source 112, an integrator 121 and a polarization conversion element 122 are sequentially arranged from the light source 112. The integrator 121 is configured to uniformize the illuminance distribution of the light emitted from the light source 112. Further, the polarization conversion element 122 is configured to change the light from the light source 112 into polarized light having a specific vibration direction such as s-polarized light.

  The liquid crystal light valve 115 is a transmissive liquid crystal device 100 that modulates red light transmitted through the dichroic mirror 113 and reflected by the reflection mirror 123 in accordance with an image signal. The liquid crystal light valve 115 includes a λ / 2 phase difference plate 115a, a first polarizing plate 115b, a liquid crystal panel 115c, and a second polarizing plate 115d. Here, the red light incident on the liquid crystal light valve 115 remains s-polarized light because the polarization of the light does not change even if it passes through the dichroic mirror 113.

  The λ / 2 phase difference plate 115a is an optical element that converts s-polarized light incident on the liquid crystal light valve 115 into p-polarized light. The first polarizing plate 115b is a polarizing plate that blocks s-polarized light and transmits p-polarized light. The liquid crystal panel 115c is configured to convert p-polarized light into s-polarized light (circularly polarized light or elliptically polarized light in the case of halftone) by modulation according to the image signal. Furthermore, the second polarizing plate 115d is a polarizing plate that blocks p-polarized light and transmits s-polarized light. Therefore, the liquid crystal light valve 115 is configured to modulate the red light according to the image signal and emit the modulated red light toward the cross dichroic prism 119.

  Note that the λ / 2 phase difference plate 115a and the first polarizing plate 115b are disposed in contact with a light-transmitting glass plate 115e that does not convert polarized light, and the λ / 2 phase difference plate 115a and the first polarizing plate 115b. It is possible to avoid distortion of 115b due to heat generation.

  The liquid crystal light valve 116 is a transmissive liquid crystal device 100 that modulates green light reflected by the dichroic mirror 114 after being reflected by the dichroic mirror 113 in accordance with an image signal. Similarly to the liquid crystal light valve 115, the liquid crystal light valve 116 includes a first polarizing plate 116b, a liquid crystal panel 116c, and a second polarizing plate 116d. Green light incident on the liquid crystal light valve 116 is s-polarized light that is reflected by the dichroic mirrors 113 and 114 and then incident. The first polarizing plate 116b is a polarizing plate that blocks p-polarized light and transmits s-polarized light. The liquid crystal panel 116c is configured to convert s-polarized light into p-polarized light (circularly polarized light or elliptically polarized light in the case of halftone) by modulation according to the image signal. The second polarizing plate 116d is a polarizing plate that blocks s-polarized light and transmits p-polarized light. Accordingly, the liquid crystal light valve 116 is configured to modulate green light in accordance with the image signal and emit the modulated green light toward the cross dichroic prism 119.

  The liquid crystal light valve 117 is a transmissive liquid crystal device 100 that modulates blue light reflected by the dichroic mirror 113 and transmitted through the dichroic mirror 114 and then through the relay system 120 in accordance with an image signal. Similarly to the liquid crystal light valves 115 and 116, the liquid crystal light valve 117 includes a λ / 2 retardation film 117a, a first polarizing plate 117b, a liquid crystal panel 117c, and a second polarizing plate 117d. Here, since the blue light incident on the liquid crystal light valve 117 is reflected by the two reflecting mirrors 125a and 125b described later of the relay system 120 after being reflected by the dichroic mirror 113 and transmitted through the dichroic mirror 114, the s-polarized light is reflected. It has become.

  The λ / 2 phase difference plate 117a is an optical element that converts s-polarized light incident on the liquid crystal light valve 117 into p-polarized light. The first polarizing plate 117b is a polarizing plate that blocks s-polarized light and transmits p-polarized light. The liquid crystal panel 117c is configured to convert p-polarized light into s-polarized light (circularly polarized light or elliptically polarized light in the case of halftone) by modulation according to the image signal. Furthermore, the second polarizing plate 117d is a polarizing plate that blocks p-polarized light and transmits s-polarized light. Accordingly, the liquid crystal light valve 117 is configured to modulate blue light in accordance with an image signal and emit the modulated blue light toward the cross dichroic prism 119. The λ / 2 phase difference plate 117a and the first polarizing plate 117b are disposed in contact with the glass plate 117e.

  The relay system 120 includes relay lenses 124a and 124b and reflection mirrors 125a and 125b. The relay lenses 124a and 124b are provided to prevent light loss due to a long blue light path. Here, the relay lens 124a is disposed between the dichroic mirror 114 and the reflection mirror 125a. The relay lens 124b is disposed between the reflection mirrors 125a and 125b. The reflection mirror 125a is disposed so as to reflect the blue light transmitted through the dichroic mirror 114 and emitted from the relay lens 124a toward the relay lens 124b. The reflection mirror 125b is arranged to reflect the blue light emitted from the relay lens 124b toward the liquid crystal light valve 117.

  The cross dichroic prism 119 is a color combining optical system in which two dichroic films 119a and 119b are arranged orthogonally in an X shape. The dichroic film 119a is a film that reflects blue light and transmits green light, and the dichroic film 119b is a film that reflects red light and transmits green light. Therefore, the cross dichroic prism 119 is configured to combine the red light, the green light, and the blue light modulated by the liquid crystal light valves 115 to 117 and emit the resultant light toward the projection optical system 118.

  Note that light incident on the cross dichroic prism 119 from the liquid crystal light valves 115 and 117 is s-polarized light, and light incident on the cross dichroic prism 119 from the liquid crystal light valve 116 is p-polarized light. Thus, by making the light incident on the cross dichroic prism 119 into different types of polarized light, the light incident from the liquid crystal light valves 115 to 117 in the cross dichroic prism 119 can be synthesized. Here, in general, the dichroic films 119a and 119b are excellent in s-polarized reflection transistor characteristics. Therefore, red light and blue light reflected by the dichroic films 119a and 119b are s-polarized light, and green light transmitted through the dichroic films 119a and 119b is p-polarized light. The projection optical system 118 has a projection lens (not shown) and is configured to project the light combined by the cross dichroic prism 119 onto the screen 111.

(Second example of projection display device)
In the projection display device 1000 shown in FIG. 6B, the light source unit 890 includes a polarization illumination device 800 in which a light source 810, an integrator lens 820, and a polarization conversion element 830 are arranged along the system optical axis L. . The light source unit 890 also reflects the s-polarized light beam emitted from the polarization illumination device 800 along the system optical axis L by the s-polarized light beam reflection surface 841 and the s-polarized light beam of the polarization beam splitter 840. Of the light reflected from the reflecting surface 841, the dichroic mirror 842 that separates the blue light (B) component and the red light (R) component of the luminous flux after the blue light is separated are separated. And a dichroic mirror 843.

  The projection display device 1000 includes three reflective liquid crystal devices 100 (liquid crystal devices 100R, 100G, and 100B) on which each color light is incident, and the light source unit 890 includes three liquid crystal devices 100 (liquid crystal devices 100R). , 100G, 100B).

  In the projection display apparatus 1000, the light modulated by the three liquid crystal devices 100R, 100G, and 100B is synthesized by the dichroic mirrors 842 and 843 and the polarization beam splitter 840, and then the synthesized light is projected by the projection optical system 850. Is projected onto a projection target member such as a screen 860.

(Other projection display devices)
In addition, about a projection type display apparatus, you may comprise the LED light source etc. which radiate | emit the light of each color as a light source part, and supply each color light radiate | emitted from this LED light source to another liquid crystal device. .

(Other electronic devices)
As for the liquid crystal device 100 to which the present invention is applied, in addition to the electronic devices described above, mobile phones, personal digital assistants (PDAs), digital cameras, liquid crystal televisions, car navigation devices, video phones, POS terminals, You may use as a direct view type | mold display apparatus in electronic devices, such as an apparatus provided with the touch panel.

7a ... Second electrode layer (first conductive layer), 9a ... Pixel electrode (second conductive layer), 10 ... Element substrate, 10f ... Inter pixel area, 10w ... Substrate body, 30 ... Pixel transistor 45 .. First insulating film, 45a ... Contact hole, 47 ... Second insulating film, 100 ... Liquid crystal device, 110, 1000 ... Projection type display device

Claims (5)

A first conductive layer provided on one side of the substrate;
A first insulating film provided on a side opposite to the substrate with respect to the first conductive layer and having a contact hole reaching the first conductive layer;
A second insulating film provided on a side wall of the contact hole while avoiding a bottom of the contact hole;
A second conductive layer provided on a side opposite to the substrate with respect to the first insulating film, and conducting to the first conductive layer at a bottom portion of the contact hole,
The second conductive layer is a pixel electrode;
The second insulating film is a silicate glass doped with at least one of phosphorus and boron, and outside the contact hole, between the first insulating film and the second conductive layer and the second conductive film. An electro-optical device provided in a non-formation region of a layer.   The electro-optical device according to claim 1, wherein the substrate holds a liquid crystal layer between the substrate and a counter substrate disposed to face the one surface. A projection display device comprising the electro-optical device according to claim 1,
A projection-type display device comprising: a light source unit that emits illumination light applied to the electro-optical device; and a projection optical system that projects light modulated by the electro-optical device.   An electronic apparatus comprising the electro-optical device according to claim 1. A first conductive layer forming step of forming a first conductive layer on one side of the substrate;
A first insulating film forming step of forming a first insulating film on a side opposite to the substrate with respect to the first conductive layer;
A contact hole forming step of forming a contact hole reaching the first conductive layer in the first insulating film;
A second insulating film forming step of forming a second insulating film made of silicate glass doped with at least one of phosphorus and boron on the opposite side of the first conductive layer with respect to the first insulating film;
Anisotropic etching is performed on the second insulating film to remove the second insulating film from the bottom of the contact hole, and the second insulating film is disposed on the side wall of the contact hole and outside the contact hole. Etch back process to leave,
A second conductive layer forming step of forming a second conductive layer as a pixel electrode conducting to the first conductive layer at the bottom of the contact hole;
A method for manufacturing an electro-optical device.

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