JP2012251925A - Physical quantity sensor, method for controlling physical quantity sensor, electronic equipment - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a physical quantity sensor with a large dynamic range, a method for controlling the physical quantity sensor, and electronic equipment using the same.SOLUTION: A physical quantity sensor includes: a substrate 10; a first loading member 2 which has a first inclined plane 2a inclined to a first plane 10a of the substrate 10 by α°; a second loading member 3 which has a second inclined plane 3a; a sensor device Dloaded on the first plane 10a by turning a detection axis vector nin the direction where main physical quantity is applied; a sensor device Dand a sensor device Dloaded on each of the first loading member 2 and the second loading member 3 arranged so that a detection axis vector nand a detection axis vector nturn to the direction different from that of the detection axis vector, in which relations of n≠⊥n, n≠⊥n, and n⊥nare established in the direction of the respective detection axis vectors n, n, n.

Description

The present invention relates to a physical quantity sensor, a control method for the physical quantity sensor, and an electronic apparatus using the same.

2. Description of the Related Art Conventionally, in a physical quantity sensor that senses a physical quantity such as acceleration or angular velocity, a configuration using a sensor device including a sensor element and a circuit element having a drive circuit, a detection circuit, and the like for the sensor element is known.
For example, Patent Document 1 discloses a vibrating gyro element (gyro vibrating piece) as a sensor element.
And a physical quantity sensor (piezoelectric sensor) in which a sensor device including a semiconductor device (IC chip) as a circuit element is housed in a package is disclosed.

Further, for example, Patent Document 2 discloses a physical quantity sensor that includes a plurality of sensor devices and is capable of sensing multi-axis physical quantities as a physical quantity sensor that realizes downsizing and high functionality of an electronic device.
In the physical quantity sensor (sensor unit) described in Patent Document 2, sensor devices are mounted on each of a plurality of surfaces, for example, three surfaces of a rectangular substrate. As a result, the detection axes of the three sensor devices are orthogonal to each other, and the detection axis vector of each sensor device can be matched with the orthogonal coordinate system, so that the sensor output can be handled in the calculation of the direction of the physical quantity, for example, the attitude angle. It becomes easy.

JP 2005-292079 A U.S. Pat. No. 7,040,922

In order to meet the demand for higher functionality of electronic devices, there is a growing need for higher functionality of physical quantity sensors mounted on electronic devices, and physical quantity sensors with a larger dynamic range are required. However, in the physical quantity sensor described in Patent Document 1, the dynamic range of each sensor device is the dynamic range of the physical quantity sensor.
The inventor detects at least two other sensor devices with respect to the sensor device D ₀ placed with the detection axis vector directed in the direction in which the main physical quantity is applied in the physical quantity sensor including at least three sensor devices. by arranging the axis vector so as not to perpendicular to the detection axis vector of the sensor device D _0, without complicating the detection circuit, that can be relatively easily detected physical quantity exceeding the dynamic range of the sensor device D ₀ I found it.

SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.

[Application Example 1] The physical quantity sensor of this application example is different from the substrate, the first mounting member having the first inclined surface inclined with respect to one main surface of the substrate, and the first inclined surface. Second suitable for
A second mounting member having an inclined surface and at least three sensor devices having a detection axis in a predetermined direction, the sensor device having a detection axis vector n ₀ directed in a direction orthogonal to the one main surface. The sensor device D ₀ placed on the one principal surface and the detection axis vector n ₀
Sensor device D ₁ mounted on the first slope of the first mounting member, the detection axis vector n _0, and the detection axis vector n so that the detection axis vector n ₁ faces the direction intersecting Sensor device D ₂ mounted on the second inclined surface of the second mounting member so that the detection axis vector n ₂ faces in a direction intersecting with ₁ , and each detection axis vector n ₀ , n ₁ , N ₂ is n ₁
≠ の n ₀ , n ₂ ≠ ⊥n ₀ , and n ₁ ⊥n ₂ are satisfied.

According to the physical quantity sensor configured as described above, the sensor device D ₁ and the sensor device D ₂
Since the detection axis vector n ₁ and the detection axis vector n ₂ are arranged so as not to be orthogonal to the detection axis vector n ₀ of the sensor device D ₀ to which the main physical quantity is applied, the detection axis vector n ₀ is applied in the direction to the detection axis vector n _0. sensor device and the sensor device D ₂ can detect a physical amount relative to the physical quantity. Furthermore, even if the physical quantity is applied to the detection axis vector n ₀ direction exceeds the dynamic range of the sensor device D _0, the sensor device D ₁ and sensor device D detects axis vector n ₁ and the detection axis vector n ₂ of ₂ saturated Without this, the physical quantity exceeding the dynamic range of the sensor device D ₀ can be detected. In addition, since the detection axis vector n ₁ and the detection axis vector n ₂ are orthogonal to each other, an n1 component and an n2 component are generated with respect to a physical quantity applied to the detection axis vector n ₁ and the detection axis vector n ₂ . Thus, it is possible to avoid the trouble that the detection data needs to be corrected and the calculation is complicated.
Therefore, it is possible to provide a physical quantity sensor that can detect a physical quantity exceeding the dynamic range of the mounted sensor device with high sensitivity without complicating the detection circuit and the like.

Application Example 2 In the physical quantity sensor according to the application example, the detection axis vector n ₀ ,
When the angle formed by the detection axis vector n ₁ and the detection axis vector n ₂ is α, and the angle formed by the first inclined surface and the second inclined surface on the substrate is β, the following equation: 45
<Α ≦ 90, 90 <β <180, and Sin ² α-cos ² α · sin (β-α) = 0)
It satisfies the following conditions.

By satisfying this condition, the detection axis vector n ₁ and the detection axis vector n ₂ are orthogonal to each other. Therefore, an unnecessary detection component depends on the physical quantity applied to each of the detection axis vector n ₁ and the detection axis vector n _2. This can avoid the problem that the data calculation becomes complicated.

Application Example 3 In the physical quantity sensor according to the application example, α = 54.74 °, β = 1.
It is characterized by being 20 °.

By satisfying this condition, since the detection axis vector n ₁ and the detection axis vector n ₂ are orthogonal to each other, a physical quantity sensor having a large dynamic range can be provided without generating unnecessary detection components and complicating data calculation. Can do.

Application Example 4 In the physical quantity sensor according to the application example described above, the first placement member and the second placement member are integrally formed as one triangular pyramid member.

According to this configuration, the sensor device D ₀ having the detection axis vector n ₀ to which the main physical quantity is applied, and the sensor device having the detection axis vector n ₁ and the detection axis vector n ₂ that have the effect of expanding the dynamic range of the physical quantity sensor. Since D ₁ and the sensor D ₂ can be arranged with a _single member so as to satisfy the positional relationship of the detection axis vector of the above application example with high positional accuracy, a small physical quantity sensor with a high dynamic range upper limit value can be provided. it can.

[Application Example 5] A physical quantity sensor of this application example is formed by etching a single crystal substrate and a part of one main surface of the single crystal substrate, and is inclined at a predetermined angle with respect to the one main surface. A digging portion including at least one slope and a second slope, and at least three sensor devices having a detection axis in a predetermined direction, wherein the sensor device has a detection axis in a direction orthogonal to the one main surface. The sensor device D ₀ placed on the one main surface with the vector n ₀ facing toward the first inclined surface so that the detection axis vector n ₁ faces the direction intersecting the detection axis vector n _0. a sensor device D ₁ which is comprises a sensor device D ₂ placed on the second inclined surface so that the detection axis vector n ₂ directed in the direction intersecting the detection axis vector n _0, the detection axis vector n _0, the direction of n _1, n _{2 , N 1 ≠ ⊥n 0, n} 2 ≠ ⊥n 0, and characterized in that the relationship of n ₁ ⊥n ₂ holds.

A single crystal substrate has etching anisotropy, and it is known that a slope with a smooth and accurate angle can be formed by utilizing the difference in etching rate depending on the crystal plane.
A part of one main surface of the single crystal substrate can be etched to form a digging portion including at least a first slope and a second slope having a desired inclination angle.
According to the above configuration, the sensor device D _{1 is provided} on the first slope and the second slope of the digging portion.
And sensor device by placing the D _2, and the detection axis vector n ₀ of the sensor device D ₀ that primary physical quantity is applied, the sensor device D ₁ and the detection axis vector n ₁ and the detection axis vector n of the sensor device D _{2 2} can be arranged so as not to be orthogonal to ₂ .
Thereby, even when the physical quantity applied to the detection axis vector n ₀ exceeds the dynamic range of the sensor device D ₀ , the physical quantity is detected without the detection axis vector n ₁ and the detection axis vector n ₂ being saturated. Can do. In addition, since the detection axis vector n ₁ and the detection axis vector n ₂ are orthogonal to each other, an n1 component and an n2 component are generated with respect to a physical quantity applied to the detection axis vector n ₁ and the detection axis vector n ₂ . Thus, it is possible to avoid the problem that the detection data needs to be corrected and the calculation is complicated.
Further, since the sensor device is mounted on the digging portion of the substrate, it is advantageous for making the physical quantity sensor thinner.
Therefore, it is possible to provide a physical quantity sensor that is small (thin) and can detect a physical quantity exceeding the dynamic range of the mounted sensor with high sensitivity.

Application Example 6 In the physical quantity sensor according to the application example, the single crystal substrate is silicon, the one main surface is a Si {111} surface of the silicon, and the first and second inclined surfaces are provided. Is the Si {100} face of the silicon.

A silicon substrate as a single crystal substrate having the above structure is a Si {111} wafer (the main surface is Si
It can be formed by etching from the Si {111} surface of a {111} surface silicon wafer). The etched surface of the digging portion thus formed is Si {
A Si {100} plane that is an inclined plane having an accurate angle with respect to the 111} plane is formed.
As a result, the sensor device D ₀ is placed with the Si {111} plane as the one main surface, and the sensor device is placed on each slope with the Si {100} plane of the digging portion as the first slope and the second slope. By mounting D ₁ and sensor device D ₂ , sensor device D ₀ having detection axis vector n ₀ to which the main physical quantity is applied, detection axis vector n ₁ and detection that have the effect of expanding the dynamic range of the physical quantity sensor a sensor device D ₁ and Sansa D ₂ having an axis vector n _2, can be arranged so as to satisfy the positional relationship between the detection axis vector position accurately the application example, a high dynamic range physical quantity sensor with a small Can be provided.

Application Example 7 A physical quantity sensor control method according to this application example includes a substrate, a first mounting member having a first inclined surface inclined with respect to one main surface of the substrate, and the first inclined surface. A second mounting member having a second inclined surface inclined at an angle different from that of the sensor, and at least three sensor devices having detection axes in a predetermined direction, wherein the sensor device is orthogonal to the one main surface. a sensor device D ₀ that is mounted on the one main surface toward the detection axis vector n ₀ in the direction, the first placed so that the detection axis detection axis vector n ₁ in a direction intersecting with the vector n ₀ face A sensor device D ₁ mounted on the first slope of the member, and a second mounting member such that the detection axis vector n ₂ faces the detection axis vector n ₀ and the detection axis vector n _1. Placed on the second slope of And sensor device D ₂ , and each detection axis vector n ₀ , n ₁
, N ₂ is a physical quantity sensor control method in which the relationship of n ₁ ≠ ⊥n ₀ , n ₂ ≠ ⊥n ₀ , and n ₁ ⊥n ₂ holds, and the sensor devices D ₀ , D ₁ , D ₂ From the detection axis vector n ₀ ,
a physical quantity measuring step for measuring each of the physical quantities of n ₁ and n ₂ , and a step of detecting a physical quantity applied to the physical quantity sensor based on a measured value by the sensor in the physical quantity measuring step. , Determining whether the physical quantity measurement value of the detection axis vector n ₀ exceeds the maximum value of the dynamic range of the sensor device D ₀ , and the physical quantity measurement value is the sensor device D _0. When the physical quantity measurement value of the detection axis vector n ₀ is detected as the physical quantity applied to the physical quantity sensor as it is, the physical quantity measurement value exceeds the dynamic range of the sensor device D _0. The physical quantity applied to the physical quantity sensor as n ₀ = n ₁ · sin α It is characterized by detecting.

According to the physical quantity sensor having the above control method, it is possible to provide a small physical quantity sensor with a high dynamic range without complicating the detection circuit.

Application Example 8 An electronic apparatus according to this application example includes the physical quantity sensor according to any one of the application examples or the physical quantity sensor having the control method according to the application example. To do.

The electronic device having the above-described configuration is the physical quantity sensor of the above application example or the physical quantity sensor having the control method of the above application example, that is, the physical quantity whose substantial dynamic range is increased while avoiding the complexity of the detection circuit. Since it has a sensor, it has high performance and stable characteristics.

It is a schematic diagram which shows one Embodiment of the sensor device mounted in a physical quantity sensor, (a) is the top view seen from the upper side, (b) is a front sectional view. The perspective view which shows typically schematic structure of one Embodiment of a physical quantity sensor. The flowchart which shows the control method of a physical quantity sensor. The perspective view which shows typically schematic structure of the modification 1 of a physical quantity sensor. The perspective view which shows typically one variation of the modification 2 of a physical quantity sensor. The perspective view which shows typically another variation of the modification 2 of a physical quantity sensor. It is a schematic diagram which shows the example of the electronic device carrying the physical quantity sensor of the said embodiment and a modification, (a) is a perspective view of a digital video camera, (b) is a perspective view of a mobile telephone, (c) is The perspective view of a personal digital assistant (PDA).

  DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, embodiments of the invention will be described with reference to the drawings.

[Sensor device]
First, an embodiment of a sensor device mounted on a physical quantity sensor will be described.
1A and 1B are schematic views showing a schematic configuration of a sensor device, wherein FIG. 1A is a plan view seen from a vibration gyro element side (upper side) as a sensor element, and FIG. 1B is a front sectional view of FIG. It is. In FIG. 1A, for the sake of convenience in explaining the internal structure of the sensor device, the illustration of the lid (lid) is omitted.

As shown in FIG. 1, the sensor device D ₀ includes a vibration gyro element 20 as a sensor element, an IC chip 40 as a semiconductor circuit element having at least a drive circuit and a detection circuit for the vibration gyro element 20, and the vibration gyro element 20. And a package 60 for accommodating the IC chip 40.

In the package 60, a flat plate-like first layer substrate 61, a rectangular annular second layer substrate 62 having a different opening size, a third layer substrate 63, and a fourth layer substrate 64 are laminated in this order. . Second
Since the size of the opening increases from the layer substrate 62 to the fourth layer substrate 64, a recess having a step is formed inside the package 60. In addition,
As the first layer substrate 61 to the fourth layer substrate 64 constituting the package 60, those obtained by molding ceramic green sheets are widely used. For example, a sintered aluminum oxide sintered body or the like is used.

The IC chip 40 is bonded and fixed to the upper surface of the first layer substrate 61 that becomes the concave bottom surface of the concave portion of the package 60 by a die attach material (not shown).
In the IC chip 40, an integrated circuit (not shown) including a semiconductor element such as a transistor or a memory element is formed on the active surface 40a side. This integrated circuit includes a drive circuit for driving and vibrating the vibrating gyro element 20 and a detection circuit for detecting a detected vibration generated in the vibrating gyro element 20 when an angular velocity is applied. On the active surface 40a side of the IC chip 40, there are provided a plurality of electrode pads 45 that are drawn from the integrated circuit and make electrical connection between the integrated circuit and the outside.
Each electrode pad 45 of the IC chip 40 is electrically connected via a bonding wire 95 to a corresponding IC connection terminal 65 provided in a step formed by the second layer substrate 62 in the recess of the package 60. . Note that the electrical connection between the IC chip 40 and the package 60 is not limited to the method using wire bonding according to the present embodiment.
Other bonding methods such as face-down bonding in which bumps such as solder are provided on the IC connection terminals and directly bonded to the IC connection terminals can be used.

The step portion formed by the third layer substrate 63 in the concave portion of the package 60 has a vibrating gyro element 2.
A mount electrode 66 to which 0 is bonded is provided.
The vibrating gyro element 20 is connected to the mount electrode 66 via a bonding member 97 such as a conductive adhesive in a state where the external connection terminals 15 and 16 provided on the base 21 are aligned with the corresponding mount electrode 66 of the package 60. It is joined. As a result, the vibrating gyro element 20 is cantilevered above the IC chip 40 via the gap in the recess of the package 60.
Note that electrodes such as an IC connection terminal 65 and a mount electrode 66 provided in the package 60,
For the terminals and the wiring connecting them, for example, a metal film in which a film of nickel (Ni), gold (Au) or the like is laminated on a metallized layer of tungsten (W) or the like by plating or the like is used.

In the sensor device D ₀ , the IC chip 40 and the vibration gyro element 20 are packaged 60.
The lid 70 is bonded to the upper surface of the package 60 via a bonding member 69 such as a seam ring or low-melting glass in the state of being disposed and housed as described above. In the lid 70,
Metals such as Kovar, glass, ceramics, etc. are used.
Thereby, the inside of the package 60 is hermetically sealed. Note that the inside of the package 60 is preferably maintained in a vacuum state (a high degree of vacuum) or an inert gas atmosphere so that the vibration of the vibrating gyro element 20 is not hindered.

Next, an outline of the operation of the vibration gyro element 20 in the sensor device D ₀ will be described.
In the sensor device D ₀ shown in FIG. 2, an excitation signal is applied to the excitation electrode 12 of the vibrating arm 22 to excite and vibrate in the in-plane direction (X direction) perpendicular to the extending direction (Y direction) of the vibrating arm 22. When a rotational motion about an axis about the extending direction (Y direction) of the vibrating arm 22 is applied when
The rotational motion generates a Coriolis force in the out-of-plane direction (Z direction) orthogonal to the excitation vibration direction, and generates vibration in the out-of-plane direction (Z direction) via the base portion 21 on the other vibrating arm 23. The rotational angular velocity applied to the vibration gyro element 20 is detected by converting the out-of-plane vibration of the other vibration arm 23 serving as the detection unit into a signal that has been electrically detected by the detection electrode 13 and detecting it.

[Gyro sensor]
Next, a physical quantity sensor equipped with the above sensor device will be described with reference to the drawings.
FIG. 2 is a perspective view schematically showing a schematic configuration of the physical quantity sensor.
In FIG. 1, the physical quantity sensor 1 includes a substrate 10 and three sensor devices D ₀ , D ₁ , and D ₂ mounted on the substrate 10.

A sensor device D ₀ having a detection axis vector n ₀ directed in a direction in which a main physical quantity (rotational angular velocity) in the physical quantity sensor 1 is applied is fixed to the first surface 10 a as one main surface of the substrate 10.
Further, the first surface 10a has a region different from the region where the sensor device is fixed in the first surface 10a.
A first mounting member 2 having a first inclined surface 2a inclined at a predetermined angle α with respect to the first surface 10a, and a second having a second inclined surface 3a oriented in a direction different from the first inclined surface 2a. A mounting member 3 is disposed.
A sensor device D ₁ is placed and fixed on the first slope 2 a of the first placement member 2. A sensor device D ₂ is placed and fixed on the second slope 3 a of the second placement member 3.

These sensor devices D ₀ , D ₁ and D ₂ are arranged in the positional relationship described below.
First, the sensor device D _0, D _1, D _2, each of the detection axis vector n _0, n _1, n ₂ are arranged to be directed in different directions. The detection axis vector n ₁ of the sensor device D _1, and the detection axis vector n ₂ of the sensor device D ₂ is not orthogonal to the detection axis vector n ₀ of the sensor device _{D 0 (n 1 ≠ ⊥n 0} , n ₂ ≠ ⊥n ₀ ).

Further, a detection axis vector n ₁ of the sensor device D _1, are arranged to be orthogonal (n ₁ ⊥n ₂₎ to the detection axis vector n ₂ of the sensor device D _2.
More specifically, the sensor device detecting axis vector n ₀ and the detection axis vector n ₁ of the sensor device D ₁ of the D _0, and the detection axis vector n ₀ and sensor devices D ₂ detection axis vector n ₂
45 <α ≦ 90, where α is the angle formed by the first mounting member 2 and β is the angle formed by the first inclined surface 2a of the first mounting member 2 and the second inclined surface 3a of the second mounting member 3. 90 <β <180 and S
It is desirable to satisfy the condition of in ² α−cos ² α · sin (β−α) = 0.
More specifically, α = 57.74 ° and β = 120 ° are preferable.
By satisfying these conditions, orthogonal to the detection axis vector n ₂ of the detection axis vector n ₁ and sensor device D ₂ of the sensor device D _1.

According to the gyro sensor having the above configuration, the detection axis vector n ₁ and the detection axis vector n _{2 of} the sensor device D ₁ and the sensor device D ₂ are the detection axis vectors of the sensor device D ₀ to which the main rotational angular velocity (physical quantity) is applied. because it is arranged so as not orthogonal to n _0, even when the rotational angular velocity is applied to the detection axis vector n ₀ exceeds the dynamic range of the sensor device D _0, the sensor device D ₁ and sensor device D ₂ The rotational angular velocity that exceeds the dynamic range of the sensor device D ₀ can be detected without the detection axis vector n ₁ and the detection axis vector n ₂ being saturated.

Moreover, the fact that is orthogonal to the detection axis vector n ₂ of the detection axis vector n ₁ and sensor device D ₂ of the sensor device D _1, the physical quantity is applied to the detection axis vector n ₁ and the detection axis vector n ₂ On the other hand, it is possible to avoid the problem that the n1 component and the n2 component are generated and the detection data needs to be corrected and the calculation becomes complicated.
Therefore, it is possible to provide the physical quantity sensor 1 that can detect the rotational angular velocity exceeding the dynamic range of the mounted sensor device with high sensitivity without complicating the detection circuit.
Further, the physical quantity sensor 1 includes the detection axis vectors n ₀ , n of the sensor devices D ₀ , D ₁ , D _2.
The rotational angular velocity about the axes ₁ and n ₂ can be detected by one physical quantity sensor 1.
For this reason, the physical quantity sensor 1 is capable of correcting camera shake of the imaging device and GPS (Global
(Positioning System) It is suitably used for attitude detection and attitude control of a vehicle or the like in a mobile navigation system using satellite signals.

In the present embodiment, the physical quantity sensor 1 as a physical quantity sensor using the three sensor devices D ₀ , D ₁ , D ₂ has been described. However, the number of sensor devices may be three or more, for example, four By providing the above sensor device, angular velocity in directions of four or more axes can be detected.

Next, a method for controlling the gyro sensor of this embodiment will be described.
FIG. 3 is a flowchart showing a method for controlling the gyro sensor.
In FIG. 3, first, an excitation signal is applied to the vibration gyro element 20 (see FIGS. 1 and 2) included in each of the sensor devices D ₀ , D ₁ , D ₂ of the physical quantity sensor 1 to cause the vibration to rotate. Rotational speed (physical quantity) of rotational movement around the axis about the detection axis vector n ₀ applied to the sensor device D ₀ installed with the detection axis vector n ₀ directed in the direction in which the
Is converted into a signal that has been electrically detected and measured (step S1).

Next, the rotational angular velocity (physical quantity) measurement value n ₀ ′ of the detection axis vector n ₀ of the sensor device D _0.
Determines whether or not the maximum value of the dynamic range of the sensor device D ₀ is exceeded (step S2).
If the measured value n ₀ ′ exceeds the maximum value of the dynamic range of the sensor device D ₀ (YES in step S2), the measured value n ₀ ′ is corrected by the following equation (1) to obtain the rotational angular velocity. (Physical quantity) n ₀ is calculated and obtained (step S3).
n ₀ = n ₁ · sin α (1)
Further, when the measured value n ₀ ′ of the rotational angular velocity obtained by the physical quantity measurement in step S2 does not exceed the dynamic range of the sensor device D ₀ , the physical quantity measured value n ₀ ′ of the detection axis vector n ₀ is used as it is. A detection value is obtained as the angular rotation speed n ₀ applied to the sensor 1 (step S4).

According to the physical quantity sensor 1 having the above control method, without complicating the detection circuit,
A physical quantity sensor 1 that is small and has a high dynamic range can be provided.

The physical quantity sensor described in the above embodiment can also be implemented as the following modifications.

Hereinafter, modified examples of the physical quantity sensor will be described with reference to the drawings.
(Modification 1)
FIG. 4 is a perspective view schematically showing a schematic configuration of Modification 1 of the physical quantity sensor. In addition, about the common part with the said embodiment, the same code | symbol is attached | subjected and description is abbreviate | omitted and it demonstrates centering on a different structure from the said embodiment.

In the physical quantity sensor 101 of this modification shown in FIG. 4, the first placement member 2 and the second placement member 3 (see FIG. 1) in the physical quantity sensor 1 of the above embodiment are formed from a single triangular pyramid-shaped member. It will be.
That is, the physical quantity sensor 101 includes a substrate 110 and a first main surface of the substrate 110.
A triangular pyramid-shaped mounting member 112 provided on the surface 110a of the sensor, and three sensor devices D ₀ ,
D ₁ and D ₂ .

On the first surface 110a of the substrate 110, the mounting member 112 faces in a direction different from the first inclined surface 102a inclined at a predetermined angle with respect to the first surface 10a and the first inclined surface 2a. The second inclined surface 103a, and the third inclined surface 104a facing the direction different from the first inclined surface 102a and the second inclined surface 103a.
On the first surface 10 a of the substrate 110, a sensor device D ₀ having a detection axis vector (n ₀ ) directed in a direction in which a main physical quantity (rotational angular velocity) is applied in the physical quantity sensor 1 is fixed.
Further, the sensor device D ₁ is placed and fixed on the first slope 102 a of the placement member 112, and the sensor device D ₂ is placed and fixed on the second slope 103 a.
These sensor devices D ₀ , D ₁ , D ₂ are arranged so that the detection axis vectors n ₀ , n ₁ , n ₂ are directed in different directions, and n ₁ ≠, as in the above embodiment. ⊥
They are arranged so as to satisfy the relationship of n ₀ , n ₂ ≠ ⊥n ₀ , and n ₁ ⊥n ₂ .
Similarly to the above embodiment, 45 <α ≦ 90, 90 <β <180, and Sin ² α.
−cos ² α · sin (β−α) = 0 is preferably satisfied, and α = 54.
. It is preferable that 74 ° and β = 120 °.

The mounting member 112 can be easily obtained by cutting out one corner of the hexahedron. According to the physical quantity sensor 101 of this modified example, the sensor device D ₀ that has a detection axis vector n ₀ for primary physical quantity (rotational angular velocity) is applied, the detection axis vector n ₁ and an effect of widening the dynamic range of the physical quantity sensor a sensor device D ₁ and Sansa D ₂ has a detection axis vector n _2, with some material can be arranged so as to satisfy the positional relation described in the above embodiments may positional accuracy, the upper limit of the dynamic range in a small The physical quantity sensor 101 having a high value can be provided.

(Modification 2)
5 and 6 show a second modification of the physical quantity sensor in which a digging portion having a slope is provided on the substrate.
It is a perspective view showing typically these two variations. In addition, the said embodiment and modification 1
The common parts are denoted by the same reference numerals and description thereof is omitted.

A physical quantity sensor 201, which is one variation of the modification 2 shown in FIG. 5, includes a silicon substrate 210 as a single crystal substrate and a digging portion formed by etching a part of the first surface 210a of the silicon substrate 210. 212 and three sensor devices D ₀ , D ₁ , D ₂ .

The digging portion 212 is formed by wet etching the silicon substrate 1012, and includes a first slope 202a and a first slope inclined at a predetermined angle with respect to the first surface 210a of the silicon substrate 210. A second slope 203a oriented in a different direction from 202a,
Similarly, it is a recess having a third inclined surface 204a and a bottom surface 205a parallel to the first surface 210a. Note that the dug portion 212 described in the present modification is at least the first slope 202.
a and the second slope 203a may be provided, and four or more slopes may be provided, or a configuration without the bottom face 205a may be employed.

A sensor device D _{0 in} which a detection axis vector (n ₀ ) is directed to the first surface 210a of the silicon substrate 210 in a direction in which a main physical quantity (rotational angular velocity) is applied in the physical quantity sensor 1.
Is fixed.
In addition, the sensor device D ₁ is placed and fixed on the first slope 202 a of the digging portion 212, and the sensor device D ₂ is placed and fixed on the second slope 203 a.
These sensor devices D ₀ , D ₁ , D ₂ are arranged so that the detection axis vectors n ₀ , n ₁ , n ₂ are directed in different directions, and n ₁ ≠, as in the above embodiment. ⊥
They are arranged so as to satisfy the relationship of n ₀ , n ₂ ≠ ⊥n ₀ , and n ₁ ⊥n ₂ .
Similarly to the above embodiment, 45 <α ≦ 90, 90 <β <180, and Sin ² α.
−cos ² α · sin (β−α) = 0 is preferably satisfied, and α = 54.
. It is preferable that 74 ° and β = 120 °.

Single crystal substrates such as silicon have etching anisotropy, and it is known that a slope with a smooth and accurate angle can be formed by utilizing the difference in etching rate depending on the crystal plane. The digging portion 212 including the first slope 202a and the second slope 203a having a desired inclination angle with respect to the first surface 210a can be formed with high accuracy.
In addition, since the sensor device D ₁ and the sensor device D ₂ are mounted on the dug portion 212 of the silicon substrate 210, it is advantageous for making the physical quantity sensor 201 thinner.
Therefore, it is possible to provide a physical quantity sensor that is small (thin) and can detect a physical quantity exceeding the dynamic range of the mounted sensor with high sensitivity.
As indicated by a broken line in the figure, the sensor device D ₀ is attached to the bottom surface 205 of the digging portion 212.
It may be placed on a. In this way, since all the sensor devices D ₀ , D ₁ , D ₂ are placed on the digging portion 212, the thickness can be further reduced.

A physical quantity sensor 201 ′, which is another variation of the modification 2 shown in FIG. 6, has another functional element 250 mounted on the third slope 204a of the digging portion 212 provided in the silicon substrate 210 in the physical quantity sensor 201 of FIG. Shows the configuration.
As another functional element 250, for example, a sensor element having another sensing function such as a magnetic sensor or a temperature sensor can be mounted to constitute a multifunctional composite sensor. If an IC chip is mounted as another functional element 250, high-function and stable physical quantity sensing can be performed by performing various controls of the sensor devices D ₀ , D ₁ , and D ₂ .

Further, in the silicon substrate 210 of this modification, Si {111 is used as the first surface 210a.
} Surface and etching from the Si {111} surface, the first slope 202a and the second slope 203a controlled to have a more accurate slope can be obtained.
The etched surface of the dug portion 212 formed in this way forms a Si {100} surface that is an inclined surface with an accurate angle with respect to the Si {111} surface. As a result, Si {111
} The sensor device D ₀ is placed with the surface as the first surface 210a, and the digging portion 2
The detection axis vector n to which the main physical quantity is applied by mounting the sensor device D ₁ and the sensor device D ₂ on the respective slopes with the 12 Si {100} planes as the first slope 202a and the second slope 203a. _0. sensor device D ₀ having, a sensor device D ₁ and Sansa D ₂ has a detection axis vector n ₁ and the detection axis vector n ₂ an effect of widening the dynamic range of the physical quantity sensor, more positional accuracy above embodiment Since it can arrange | position so that the positional relationship of the detection axis vector demonstrated in (5) may be satisfy | filled, it can provide the physical quantity sensors 201 and 201 'with a small and high dynamic range.

〔Electronics〕
As described above, the electronic device equipped with the physical quantity sensor described in the above-described embodiment and the modified example achieves high performance and downsizing of the physical quantity sensor that is small and has a high dynamic range upper limit while suppressing an increase in cost. It is possible.
For example, FIG. 7A shows an application example to a digital video camera. The digital video camera 240 includes an image receiving unit 241, an operation unit 242, an audio input unit 243, and the display unit 100.
1 is provided. By mounting the physical quantity sensors 1, 101, 201, 201 ′ of the above-described embodiment and modifications on such a digital video camera 240, a so-called camera shake correction function can be mounted.
7B shows a mobile phone as an electronic device, and FIG. 7C shows an information portable terminal (P
Application examples to DA (Personal Digital Assistants) are shown respectively.
First, the cellular phone 3000 shown in FIG. 7B includes a plurality of operation buttons 3001, scroll buttons 3002, and a display unit 1002. Scroll button 300
2 is operated, the screen displayed on the display unit 1002 is scrolled.
In addition, the PDA 4000 illustrated in FIG. 7C includes a plurality of operation buttons 4001, a power switch 4002, and a display unit 1003. When the power switch 4002 is operated, various kinds of information such as an address book and a schedule book are displayed on the display unit 1003.
Various functions can be provided by mounting a physical quantity sensor including the vibration gyro element 20 of the above-described embodiment on such a cellular phone 3000 or PDA 4000.
For example, when a camera function (not shown) is given to the mobile phone 3000 in FIG.
Camera shake correction can be performed by the vibration gyro element 20 or the physical quantity sensor mounted on the cellular phone 3000. Also, the cellular phone 3000 in FIG. 7B or the PDA in FIG.
When the 4000 is equipped with a global positioning system widely known as GPS (Global Positioning System), by mounting the physical quantity sensor including the vibration gyro element 20 of the above-described embodiment, the cellular phone 3000 or P
The position and posture of DA4000 can be recognized.

In addition to the electronic device shown in FIG. 7, mobile computers, car navigation devices, electronic notebooks, calculators, workstations, televisions can be used as electronic devices to which the vibration gyro element 20 of the present invention and the physical quantity sensor including the same can be applied. A telephone, a POS terminal, a game machine, etc. are mentioned.

The embodiments of the present invention made by the inventor have been specifically described above, but the present invention is not limited to the above-described embodiments and modifications thereof, and various modifications can be made without departing from the scope of the present invention. It is possible to make changes.

For example, in the embodiment and the modified example, the physical quantity sensors 1, 101, 201, 201 ′
However, the present invention is not limited to this. For example, the present invention can be used for an acceleration sensor for sensing acceleration, a magnetic sensor for sensing magnetism, and the like.

D ₀ , D ₁ , D ₂ ... sensor devices, n ₀ , n ₁ , n ₂ ... detection axis vectors, ₁ , 101, 2
01, 201 '... physical quantity sensor, 2 ... first placement member, 2a, 102a, 202a ... first
, 3 ... second mounting member, 3a, 103a, 203a ... second slope, 10, 110, 1
0a, 110a, 210a ... first surface, 20 ... vibrating gyro element, 40 ... IC chip, 6
0 ... package, 70 ... lid, 104a ... third slope, 112 ... mounting member, 204a ...
3rd slope, 205a ... bottom surface, 210 ... silicon substrate as single crystal substrate, 212 ... digging unit, 240 ... digital video camera as electronic equipment, 241 ... image receiving unit, 242 ... operation unit, 243 ... audio input unit , 1001... And display unit, 1002.
003: Display unit, 3000: Mobile phone as an electronic device, 3001 ... Multiple operation buttons, 3002 ... Scroll buttons, 4000 ... PDA as an electronic device, 4001 ...
A plurality of operation buttons, 4002... Power switch.

Claims (8)

A substrate,
A first mounting member having a first inclined surface inclined with respect to one main surface of the substrate; and the first
A second mounting member having a second inclined surface facing in a direction different from the inclined surface of
And at least three sensor devices having detection axes in a predetermined direction,
The sensor device has a sensor device D ₀ placed on the one principal surface with a detection axis vector n ₀ directed in a direction orthogonal to the one principal surface;
A sensor device D ₁ mounted on the first inclined surface of the first mounting member such that a detection axis vector n ₁ faces in a direction crossing the detection axis vector n ₀ ;
A sensor device D ₂ mounted on the second inclined surface of the second mounting member such that a detection axis vector n ₂ faces a direction intersecting the detection axis vector n ₀ and the detection axis vector n ₁ ; Including
Each of the detection axis vectors n ₀ , n ₁ , n ₂ is a physical quantity sensor characterized by the relationship of n ₁ ≠ ⊥n ₀ , n ₂ ≠ ⊥n ₀ , and n ₁ ⊥n ₂ . The physical quantity sensor according to claim 1,
The angle formed by the detection axis vector n ₀ , the detection axis vector n ₁ , and the detection axis vector n ₂ is α, and the angle formed by the first inclined surface and the second inclined surface on the substrate is β. When the following formula,
45 <α ≦ 90,
90 <β <180,
And Sin ² α-cos ² α · sin (β-α) = 0)
A physical quantity sensor characterized by satisfying the following conditions. The physical quantity sensor according to claim 2,
A physical quantity sensor, wherein α = 54.74 ° and β = 120 °. The physical quantity sensor according to any one of claims 1 to 3,
The physical quantity sensor according to claim 1, wherein the first mounting member and the second mounting member are integrally formed as one triangular pyramid member. A single crystal substrate;
A digging portion formed by etching a part of one main surface of the single crystal substrate and including at least a first inclined surface and a second inclined surface inclined at a predetermined angle with respect to the one main surface;
And at least three sensor devices having detection axes in a predetermined direction,
The sensor device has a sensor device D ₀ mounted on the one principal surface with a detection axis vector n ₀ directed in a direction orthogonal to the one principal surface;
A sensor device D ₁ mounted on the first slope such that the detection axis vector n ₁ faces in a direction intersecting the detection axis vector n ₀ ;
A sensor device D ₂ mounted on a second slope so that the detection axis vector n ₂ faces in a direction crossing the detection axis vector n ₀ ,
The direction of each detection axis vector n ₀ , n ₁ , n ₂ is
n ₁ ≠ ⊥n ₀ ,
n ₂ ≠ ⊥n ₀ ,
And a physical quantity sensor characterized in that a relationship of n ₁ ⊥n ₂ is established. The physical quantity sensor according to claim 5,
The single crystal substrate is silicon;
The one principal surface is a Si {111} surface of the silicon;
The physical quantity sensor, wherein the first slope and the second slope are Si {100} faces of the silicon. A substrate,
A first mounting member having a first inclined surface inclined with respect to one main surface of the substrate; and the first
A second mounting member having a second inclined surface inclined at an angle different from the inclined surface of
And at least three sensor devices having detection axes in a predetermined direction,
The sensor device has a sensor device D ₀ placed on the one principal surface with a detection axis vector n ₀ directed in a direction orthogonal to the one principal surface;
A sensor device D ₁ mounted on the first inclined surface of the first mounting member such that a detection axis vector n ₁ faces in a direction intersecting the detection axis vector n ₀ ;
The sensor device D ₂ mounted on the second inclined surface of the second mounting member such that the detection axis vector n ₂ faces the detection axis vector n ₀ and the detection axis vector n _1.
Including
Each detection axis vector n ₀ , n ₁ , n ₂ is a physical quantity sensor control method in which the relationship of n ₁ ≠ ⊥n ₀ , n ₂ ≠ ⊥n ₀ , and n ₁ ⊥n ₂ is established,
A physical quantity measuring step for measuring physical quantities of the detection axis vectors n ₀ , n ₁ , n ₂ from the sensor devices D ₀ , D ₁ , D ₂ , respectively;
Detecting a physical quantity applied to the physical quantity sensor based on a measured value by the sensor in the physical quantity measuring step,
After the physical quantity measurement step, the method includes a step of determining whether a physical quantity measurement value of the detection axis vector n ₀ exceeds a maximum value of a dynamic range of the sensor device D ₀ , and the physical quantity measurement value is If the dynamic range of the sensor device D ₀ is not exceeded, the physical quantity measurement value of the detection axis vector n ₀ is detected as it is as the physical quantity applied to the physical quantity sensor, and the physical quantity measurement value is the dynamic value of the sensor device D ₀ . A physical quantity sensor control method comprising: detecting a physical quantity applied to the physical quantity sensor as n ₀ = n ₁ · sin α when the range is exceeded. An electronic apparatus comprising the physical quantity sensor according to claim 1, or the physical quantity sensor having the control method according to claim 7.

Images